Display device and method for manufacturing a liquid crystal display panel

Abstract

A display device and a method for manufacturing the liquid crystal display panel (100) are disclosed, which are configured to improve the transmittance of a detection area (HA) and thereby increase the detection rate of an optical device (350). The display device comprises a liquid crystal display panel (100) with an active area (AA) defined by a plurality of pixel areas (PA) formed by overlapping gate lines (GL) and data lines (DL), and a border area (BZ) located outside the active area (AA). A detection area (HA) is located within the active area (AA) and overlaps an optical device (350) arranged below the panel (100). A backlight unit (200) is positioned below the liquid crystal display panel (100).In the active area (AA), with the exception of the detection area (HA), the data lines (DL) contain a metal material, while in the detection area (HA), the data lines (DL) contain a transparent conductive material, thereby improving the optical transmittance through the detection area (HA) without requiring additional masking processes during manufacturing.

Description

BACKGROUND Technical field The present disclosure relates to a display device with an optical device arranged below a liquid crystal display panel and a method for manufacturing a liquid crystal display panel with a detection area. Description of the state of the art Typically, a display device delivers images to the user. For example, the display device may include a backlight unit and a liquid crystal display panel that produces an image using light supplied by the backlight unit. The backlight unit may include a backlight light source device located on one side of a backlight light guide plate. The liquid crystal display panel may be located on the backlight light guide plate. The display device may include an optical device configured to detect external light or capture an image. The optical device may overlap certain areas of the display panel. The liquid crystal display panel may include an active area that overlaps the light guide plate and a capture area that supplies external light to the optical device. The detection area can be located within the active area. Furthermore, the detection area of ​​the liquid crystal display panel contains a polarizing plate, a liquid crystal layer, a color filter layer, etc. BRIEF SUMMARY It has been observed that the presence of a polarizing plate, a liquid crystal layer, and a color filter layer in the detection area of ​​a liquid crystal display panel can reduce the transmittance of incident light to an underlying optical device. This reduction in transmittance can lead to decreased detection accuracy of the optical device. The present disclosure aims to overcome such limitations associated with conventional configurations. In particular, the present disclosure relates to a display device configured to improve the optical transmittance in a sensing area of ​​a display panel (e.g., a liquid crystal display panel). In this structure, the data lines in the sensing area are formed using a transparent conductive material such as ITO (indium tin oxide) or IZO (indium zinc oxide) instead of a conventional opaque metal. To overcome the relatively high resistance of the transparent material, metal segments are applied only locally in areas where the data lines intersect with the gate lines. These metal segments can be formed directly on the transparent lines or on a separate electrically connected layer, thereby maintaining low resistance without significantly impairing light transmittance. Further improvement in transmittance is achieved by removing the black matrix from most of the sensing area, retaining it only at the intersections of gate and data lines where necessary. Additionally, the color filters in the sensing area are arranged so that the ends of adjacent filters do not overlap, thus reducing unnecessary attenuation of the transmitted light. These modifications allow external light to reach an optical device located below the display panel, such as a camera or infrared sensor, with greater efficiency than in conventional display panel configurations. The described structure is compatible with existing manufacturing processes. A single photolithography step using a halftone mask enables the simultaneous structuring of both transparent and metallic materials without the need for additional masks. The resistance of the transparent data lines is further controlled by increasing their line width, specifically in the sensing area, ensuring stable signal transmission while maintaining optical transparency. This combination of structural and process features enables improved sensing performance by the liquid crystal panel without adding manufacturing complexity. Various embodiments of the present disclosure provide a display device that is able to improve the transmittance of a detection area of ​​a liquid crystal display panel and thereby increase the detection rate of an optical device. Various embodiments of the present disclosure provide a method for manufacturing a liquid crystal display panel to improve the transmittance of a detection area. The problems to be solved by the present disclosure are not limited to those mentioned above. Any problems not mentioned here will be apparent to the person skilled in the art from the following description. According to aspects of the present disclosure, a display device and a method for manufacturing a liquid crystal display panel are provided according to the independent claims. Further embodiments are described in the dependent claims. To achieve the aforementioned technical advantages, a display device according to the present disclosure may include a liquid crystal display panel comprising an active area in which a plurality of pixel areas are defined by a plurality of gate lines and a plurality of intersecting data lines, and a border area arranged outside the active area, wherein the active area has a sensing area. The device may include a backlighting unit located behind the liquid crystal display panel and an optical device configured to detect external light through the detection area of ​​the liquid crystal display panel. Here, the data lines located in the active area, with the exception of the detection area, may contain a metallic material, and the data lines located in the detection area may contain a transparent conductive material. Furthermore, a method for manufacturing a liquid crystal display panel, which includes an active area in which a plurality of pixel areas are defined by a plurality of gate lines and a plurality of intersecting data lines, and includes a border area arranged outside the active area, wherein the active area has a sensing area, according to the present disclosure, comprises forming a gate line with a gate electrode on a substrate in the sensing area, forming a gate insulating film on the substrate with the gate line, forming a semiconductor structure on the gate insulating film on the gate electrode, and forming a first data line using a conductive material on the gate insulating film in a direction that intersects the gate line, and a second data line using a metallic material.so that it is in contact with the first data line in an area that intersects the gate line. Furthermore, a method for manufacturing a liquid crystal display panel comprising an active area in which a plurality of pixel areas are defined by a plurality of intersecting gate lines and a plurality of data lines, and a border area located outside the active area, wherein the active area has a sensing area, according to the present disclosure, includes forming a gate line, a gate electrode extending in a first direction on a substrate in the sensing area, and a plurality of first data lines using a conductive material in a direction that intersects the gate line, and forming a gate insulating film on the substrate comprising the gate line and the first data lines.the formation of a semiconductor structure on the gate insulating film on the gate electrode and the formation of a second data line using a metallic material on the gate insulating film in a direction that intersects the gate line in order to electrically connect the adjacent first data lines. Specific details of other embodiments are included in the detailed description and drawings. BRIEF DESCRIPTION OF THE DIFFERENT VIEWS OF THE DRAWINGS The accompanying drawings, which are included for better understanding of the disclosure and form part of this application, illustrate embodiments of the disclosure and, together with the description, serve to explain the principle of the disclosure. In the drawings: Fig. 1 schematically shows a display device according to an embodiment of the present disclosure; Fig. 2 is a cross-sectional view along lines II' and II-II' from Fig. 1; Fig. 3 shows a circuit of a pixel area located in a liquid crystal panel in the display device according to an embodiment of the present disclosure; Fig. 4 is a cross-sectional view of a pixel area PA in the active area AA instead of in the detection area; Fig. 5 is a top view of pixel areas arranged in an active area of ​​a liquid crystal display panel according to an embodiment of the present disclosure; Fig.Figure 6 is a cross-sectional view along line III-III' from Figure 5; Figure 7 is a cross-sectional view along line IV-IV' of Figure 5; Figure 8 is a top view of pixel areas arranged in a detection area HA of the liquid crystal display panel according to one embodiment of the present disclosure; Figure 9 is a cross-sectional view along line III-III' from Figure 8; Figure 10 is a cross-sectional view along line IV-IV' in Figure 8; Figure 11 is a cross-sectional view along line IV-IV' of Figure 8 according to another embodiment of the present disclosure; Figures 12A to 12G are cross-sectional views of a process for forming data lines DL in the detection area HA of the liquid crystal display panel according to an embodiment of the present disclosure described in Figures 8, 9 to 10; FigureFigures 13A to 13G are cross-sectional views of a process for forming data lines DL in the detection area HA of the display panel according to a further embodiment of the present disclosure described in Fig. 11; and Fig. 14 is a diagram showing the resistance of data lines according to an example of the present disclosure and a comparison example. DETAILED DESCRIPTION The purpose and technical configuration of the present disclosure and the resulting operational effects will be more clearly understood by the following detailed description in conjunction with the drawings illustrating embodiments of the present disclosure. Since the embodiments of the present disclosure are provided to ensure that the technical spirit of the present disclosure can be adequately conveyed to those skilled in the art, the present disclosure may be embodied in other forms without being limited to the following embodiments. Furthermore, parts identified throughout the description with the same reference symbols represent the same components. If the first component is described as being "on" the second component, this includes not only the case where the first component is in direct contact with the second component on its top side, but also the case where a third component is located between the first and second components. The shapes, sizes, dimensions (e.g., length, width, height, thickness, radius, diameter, area, etc.), ratios, angles, number of elements, and the like shown in the accompanying drawings to illustrate the embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. A dimension containing the size and thickness of each component illustrated in the drawing is shown for the convenience of description, and the present disclosure is not limited to the size and thickness of the illustrated component, but it should be noted that the relative dimensions, including the relative size, position and thickness of the components illustrated in various drawings hereunder, are part of the present disclosure. Here, terms such as "first", "second", etc. are used to describe different components and to distinguish one component from another. However, for the sake of simplicity for the person skilled in the art, the first component and the second component may be named as such, provided this does not deviate from the technical spirit of the present disclosure. The terminology used in this disclosure serves only to describe certain embodiments and is not intended to limit the disclosure. For example, a component expressed in the singular contains multiple components unless the context clearly indicates that only the singular is meant. Furthermore, it should be understood that terms such as "contain," "have," or "comprising" are used to indicate the presence of a feature, number, step, operation, component, part, or combination thereof described herein, but do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof. The term "intersecting" as used here is to be interpreted broadly and does not require that two elements physically touch or cross at a single point. The term includes, among other things, configurations in which one element overlaps, traverses, intersects, is vertically aligned with, or extends beyond another element in a plan view or cross-section. The term can also encompass situations in which elements are separated by one or more intervening layers, such as insulating films or dielectric structures. Accordingly, "intersecting" should be understood to include relative positional arrangements that result in an electrical, optical, or spatial alignment, even in the absence of direct physical contact. As used here, the term "connected" is to have the broadest possible meaning. In particular, the expression "A is connected to B" includes both a direct connection—where there are no intervening components or elements—and an indirect connection, where one or more intermediate components or elements exist between A and B. In other words, "A is connected to B" includes both direct physical or electrical coupling and indirect coupling via one or more intervening components. Unless explicitly stated otherwise, these terms do not require direct physical or electrical contact. The terms "coupled" and "in contact" are to be interpreted in the same way. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by a person skilled in the art in the field of the present disclosure. Terms defined in common dictionaries should be interpreted in such a way as to correspond to their meaning in the context of the relevant technology and are not to be interpreted in an idealized or overly formal sense unless expressly defined otherwise herein. Fig. 1 schematically shows a display device according to an embodiment of the present disclosure. Fig. 2 is a cross-sectional view along lines II' and II-II of Fig. 1. Fig. 3 shows a circuit of a pixel area located in a liquid crystal display panel in the display device according to an embodiment of the present disclosure. Fig. 4 is a cross-sectional view of a pixel area PA in the active area AA instead of in the detection area. With reference to Fig. 1, Fig. 2, Fig. 3 to Fig. 4, the display device according to an embodiment of the present disclosure comprises a liquid crystal display panel 100 configured to display an image, a backlight unit 200 arranged below the liquid crystal display panel 100 and configured to supply light to the liquid crystal display panel 100, and an optical device 350 arranged below the backlight unit 200 and configured to detect external light through a detection hole area HA of the liquid crystal display panel 100. The liquid crystal display panel 100 can be used to generate images to be provided to the user. For example, the liquid crystal display panel 100 can include an active area AA, containing a plurality of pixel areas, and a border area BZ located outside the active area AA. The liquid crystal display panel 100 can include a detection area HA configured to detect external light or to detect an image in the active area AA. The detection area HA of the liquid crystal display panel 100 can overlap with the optical device 350. The liquid crystal display panel 100 can contain a liquid crystal layer that overlaps pixel areas. For example, the liquid crystal layer of the liquid crystal display panel 100 can contain liquid crystals in IPS (In-Plane Switching), FFS (Fringe Field Switching), or TN (Twisted Nematic) mode. Different signals can be applied to each pixel area via signal lines. For example, liquid crystals located in a section of the liquid crystal layer that overlaps each pixel area can be rotated by a vertical or horizontal electric field generated in the pixel area via signal lines. Accordingly, in the display device according to one embodiment of the present disclosure, images of different colors can be generated by light emitted from the active area AA of the liquid crystal display panel 100. The liquid crystal display panel 100 can contain a liquid crystal layer LC located between a first display substrate 110 and a second display substrate 120. The first display substrate 110 and the second display substrate 120 can contain an insulating material. The first display substrate 110 and the second display substrate 120 can contain a transparent material. For example, the first display substrate 110 and the second display substrate 120 can contain glass or plastic. The second display substrate 120 can contain a different material than the first display substrate 110. The liquid crystal layer LC can contain liquid crystals of different modes. For example, the liquid crystal layer LC can contain liquid crystals of IPS mode.The liquid crystals of the liquid crystal layer LC, which overlap each pixel area PA, can be rotated by a vertical or a horizontal electric field generated in the pixel area PA by the gate signal and the data signal. For example, in each pixel area PA, a pixel electrode 130, which forms a horizontal electric field, and a common electrode 140, which overlaps a section of the pixel electrode 130, can be arranged. A constant supply voltage can be applied to the common electrode 140 of each pixel area PA. A drive voltage corresponding to a data signal applied to the pixel area PA can be applied to the pixel electrode 130 of each pixel area PA in response to a gate signal applied to the pixel area PA. In particular, in the display device according to one embodiment of the present disclosure, a horizontal electric field can be generated in each pixel area PA by a drive voltage applied to the pixel electrode 130 of the pixel area PA and a power voltage applied to the common electrode 140. The drive voltage applied to the pixel electrode 130 of each pixel area PA can be maintained for a frame. For example, at least one thin-film transistor Tr and one storage capacitor Cst can be arranged in each pixel area PA. The thin-film transistor Tr of each pixel area PA can be used to generate a drive voltage in response to a gate signal applied to the pixel area PA, corresponding to a data signal applied to the pixel area PA. The thin-film transistor Tr of each pixel area PA can be electrically connected to one of the gate lines GL and one of the data lines DL. For example, the thin-film transistor Tr of each pixel area PA can include a gate electrode 121 electrically connected to one of the gate lines GL, a semiconductor structure 122 containing a region that overlaps the gate electrode 121, a drain electrode 123 electrically connected to one end of the semiconductor structure 122, and a source electrode 124 electrically connected to the remaining end of the semiconductor structure 122. The gate electrode 121 can contain a conductive material. For example, the gate electrode 121 can contain a metal such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W). The semiconductor structure 122 can be located on the gate electrode 121. The semiconductor structure 122 can contain a semiconductor material. For example, the semiconductor structure 122 can contain amorphous silicon (a-Si), polycrystalline silicon (poly-Si), or an oxide semiconductor such as IGZO. The semiconductor structure 122 can contain a channel region located between a drain region and a source region. For example, the gate electrode 121 can overlap the channel region of the semiconductor structure 122. The drain region and the source region of the semiconductor structure 122 can be located outside the gate electrode 121. The drain and source regions of semiconductor structure 122 can have a lower resistance than the channel region of semiconductor structure 122. For example, the drain and source regions of semiconductor structure 122 can contain a conductive region of an oxide semiconductor. The channel region of semiconductor structure 122 can be a non-conductive region of an oxide semiconductor. Semiconductor structure 122 can be spaced apart from the gate electrode 121. Semiconductor structure 122 can be isolated from the gate electrode 121. For example, the channel region of semiconductor structure 122 can have an electrical conductivity corresponding to the voltage applied to the gate electrode 121. The drain region of semiconductor structure 122 can be electrically connected to the source region of semiconductor structure 122 in response to a signal applied to the gate electrode 121. The drain electrode 123 and the source electrode 124 can contain a conductive material. For example, the drain electrode 123 and the source electrode 124 can contain a metal such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W). The drain electrode 123 and the source electrode 124 can contain a different material than the gate electrode 121. For example, the drain electrode 123 and the source electrode 124 can be located on a different layer than the gate electrode 121. The source electrode 124 can be located on the same layer as the drain electrode 123. The source electrode 124 can contain the same material as the drain electrode 123. The source electrode 124 can be formed by the same process as the drain electrode 123. For example, the source electrode 124 can be formed simultaneously with the drain electrode 123. The drain electrode 123 can be electrically connected to the drain region of the semiconductor structure 122. The source electrode 124 can be electrically connected to the source region of the semiconductor structure 122. The drain electrode 123 and the source electrode 124 can be isolated from the gate electrode 121. The source electrode 124 can be spaced apart from the drain electrode 123. For example, the drain electrode 123 of each pixel region PA can be electrically connected to one of the data lines DL. The drain electrode 123 can be integrally formed with one of the data lines DL. The pixel electrode 130 of each pixel region PA can be electrically connected to the source electrode 124 of the pixel region PA. The storage capacitor Cst of each pixel area PA is capable of maintaining a signal applied to the gate electrode 121 of pixel area PA for one frame. For example, the storage capacitor Cst of each pixel area PA can be electrically connected to the gate electrode 121 of pixel area PA and to a supply voltage line configured to provide the supply voltage. The thin-film transistor Tr and the storage capacitor Cst of each pixel area PA can be arranged between the first display substrate 110 and the liquid crystal layer LC. A plurality of insulating films 111, 112, 113, 114 can be arranged between the first display substrate 110 and the liquid crystal layer LC to prevent unnecessary electrical contact. For example, a gate insulating film 111, a device protection film 112, a planarizing film 113, and an interlayer insulating film 114 can be arranged between the first display substrate 110 and the liquid crystal layer LC. The gate insulating film 111 can be located close to the first display substrate 110. The semiconductor structure 122 of each pixel area PA can be isolated from the gate electrode 121 of the pixel area PA by the gate insulating film 111. For example, the gate electrode 121 of each pixel area PA can be covered by the gate insulating film 111. The semiconductor structure 122 of each pixel area PA can be located on the gate insulating film 111. The drain electrode 123 and the source electrode 124 of each pixel area PA can be in direct contact with respective parts of the semiconductor structure 122 located in the pixel area PA. For example, the drain electrode 123 and the source electrode 124 of each pixel area PA can be located on the gate insulating film 111. The gate insulating film 111 can contain an insulating material. For example, the gate insulating film 111 can contain an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). The device protection film 112 can be located on the gate insulating film 111. The device protection film 112 can serve to prevent damage to the thin-film transistor Tr located in each area PA by external influences and moisture. For example, the semiconductor structures 122, the drain electrode 123, and the source electrode 124 of each pixel area PA can be covered by the device protection film 112. The device protection film 112 can contain an insulating material. For example, the device protection film 112 can contain an inorganic insulating material such as silicon dioxide (SiOx) or silicon nitride (SiNx). The planarization film 113 can be located on the device protection film 112. The planarization film 113 can serve to eliminate steps caused by the thin-film transistor Tr and the storage capacitor Cst of each pixel area PA. For example, the surface of the planarization film 113 facing the liquid crystal layer LC can be parallel to the surface of the first display substrate 110 facing the liquid crystal layer LC. The planarization film 113 can contain an insulating material. The planarization film 113 can contain a different material than the device protection film 112. The planarization film 113 can contain a material with relatively high flowability. For example, the planarization film 113 can contain an organic insulating material. The common electrode 140 can be located on the planarization film 113. The interlayer insulating film 114 can be located between the planarization film 113 and the liquid crystal layer LC. The common electrode 140 of each pixel area PA can be insulated from the pixel electrode 130 of pixel area PA by the interlayer insulating film 114. For example, the common electrode 140 of each pixel area PA can be covered by the interlayer insulating film 114. The pixel electrode 130 of each pixel area PA can be located between the interlayer insulating film 114 and the liquid crystal layer LC. Each pixel electrode 130 can have at least one slot. The interlayer insulating film 114 can contain an insulating material. For example, the interlayer insulating film 114 can contain an inorganic insulating material. Color filters 151, a black matrix 152, and an upper protective film 115 can be located between the liquid crystal layer LC and the second display substrate 120. The color filters 151 can overlap the pixel areas PA. For example, each color filter 151 can overlap one of the pixel areas PA. Each color filter 151 can be used to display a specific color using light passing through the liquid crystal layer LC. For example, light passing through each color filter 151 can represent one of the colors red, blue, or green. The black matrix 152 can be arranged adjacent to the color filters 151. For example, one end of each color filter 151 can overlap the black matrix 152. Fig. 4 shows that the end of each color filter 151 overlaps the black matrix 152, and the ends of two adjacent color filters 151 do not overlap on the black matrix 152, but the present disclosure is not limited thereto.The ends of two adjacent color filters 151 can overlap each other on the black matrix 152. The black matrix 152 can contain a material that can reflect or absorb light. For example, light passing through the liquid crystal layer LC of each pixel area PA can be emitted outwards through the color filter 151 of the pixel area PA located in the area defined by the black matrix 152. Accordingly, in the display device according to one embodiment of the present disclosure, images with different colors can be provided to the user. The black matrix 152 can overlap the signal lines GL, DL. The thin-film transistor Tr and the storage capacitor Cst of each pixel area PA can overlap the black matrix 152. Therefore, in the display device according to one embodiment of the present disclosure, the black matrix 152 can prevent the user from perceiving the signal lines GL, DL and the thin-film transistor Tr and the storage capacitor Cst of each pixel area PA. In particular, in the display device according to one embodiment of the present disclosure, a deterioration in the quality of an image perceived by the user due to the signal lines GL, DL and the thin-film transistor Tr and the storage capacitor Cst of each pixel area PA can be prevented. The color filters 151 and the black matrix 152 can be covered by the upper protective film 115.The upper protective film 115 can serve to prevent damage to the color filters 151 and the black matrix 152 caused by external influences and moisture. The upper protective film 115 can contain an insulating material. For example, the upper protective film 115 can contain an inorganic insulating material such as silicon dioxide (SiOx) or silicon nitride (SiNx). A spacer 160 can be located between the intermediate insulating film 114 and the upper protective film 115. The spacer 160 can serve to maintain a constant distance between the intermediate insulating film 114 and the upper protective film 115. Accordingly, in the display device according to one embodiment of the present disclosure, the liquid crystal layer LC of each pixel area PA can have the same thickness. Therefore, in the display device according to one embodiment of the present disclosure, light passing through the liquid crystal layer LC of each pixel area PA can have the same optical path.Furthermore, in the display device according to an embodiment of the present disclosure, light passing through the liquid crystal layer LC of each pixel area PA can have the same luminance as light passing through the liquid crystal layer LC of the pixel area PA in which the same horizontal electric field is formed as that of the pixel area PA. The liquid crystal display panel 100 can be located on a backlight unit 200. The backlight unit 200 can serve to supply the liquid crystal display panel 100 with light. For example, the liquid crystal display panel 100 can serve to generate an image that is provided to the user using light supplied by the backlight unit 200. The backlight unit 200 can include a light source device 210, a light guide plate 220, a reflector 230, an optical film 240, a cover base 250, and a center frame 260. The light source device 210 can serve to supply light to the liquid crystal display panel 100 via the light guide plate 220. For example, the light source device 210 can be arranged on one side of the light guide plate 220. The light source device 210 can include a printed circuit board 211 and a light source 212 mounted on the printed circuit board 211. The light source 212 can be a self-illuminating device that can generate and emit light. For example, the light source 212 can contain an LED. The reflector 230 can be located below the light guide plate 220. For example, the light guide plate 220 can be located between the reflector 230 and the liquid crystal display panel 100. The reflector 230 can contain a material that can reflect light. For example, the reflector 230 can contain a metal such as aluminum (Al) or silver (Ag). Accordingly, in the display device according to one embodiment of the present disclosure, light emitted through the underside of the light guide plate 220 can be reflected by the reflector 230 toward the liquid crystal display panel 100. Therefore, in the display device according to one embodiment of the present disclosure, the amount of light supplied to the liquid crystal display panel 100 can be increased by the backlight unit 200. The optical film 240 can be arranged between the light guide plate 220 and the liquid crystal display panel 100. The light supplied to the liquid crystal display panel 100 by the light guide plate 220 can have a uniform luminance due to the optical film 240. For example, the optical film 240 can have a stacked structure consisting of a prism film 241 and a diffusion film 242. The backlighting unit 200 can include a cover plate 250 configured to accommodate the light source device 210, the light guide plate 220, the reflector 230, and the optical film 240. The cover plate 250 can contain an insulating material. For example, the cover plate 250 can be made of plastic. The cover plate 250 can have a base and side walls that project from the edge of the base. The reflector 230 can be positioned between the light guide plate 220 and the underside of the cover plate 250. The light source device 210, the light guide plate 220, and the optical film 240 can be located within the space formed by the side walls of the cover plate 250. For example, the light source device 210, the light guide plate 220, and the optical film 240 can be surrounded by the side walls of the cover plate 250. The backlight unit 200 can include a midframe 260 configured to support the liquid crystal display panel 100. The midframe 260 can be connected to the cover base 250. For example, the midframe 260 can include a connection area extending between the cover base 250 and the light guide plate 220. The light source device 210 can be attached to the connection area of ​​the midframe 260. For example, the light source device 210 can be attached to the connection area of ​​the midframe 260 by means of an adhesive element. The midframe 260 can include a seating area extending between the optical film 240 and the display panel 100. The seating area of ​​the midframe 260 can overlap the edge of the optical film 240. For example, the seating area of ​​the midframe 260 can overlap the bezel area BZ of the liquid crystal display panel 100.The active area AA of the liquid crystal display panel 100 must not overlap the seating area of ​​the central frame 260. For example, the central area of ​​the optical film 240 may be exposed by the central frame 260. The seating area of ​​the central frame 260 may be in direct contact with the optical film 240. Thus, in the display device according to one embodiment of the present disclosure, the movement of the optical film 240 by the central frame 260 can be prevented. The reflector 230 can contain a through-hole 230h that overlaps the detection area HA of the liquid crystal display panel 100. The optical film 240 can contain a film hole 240h that overlaps the detection area HA of the liquid crystal display panel 100. The cover base 250 can contain a cover hole 250h that overlaps the detection area HA of the liquid crystal display panel 100. The optical device 350 can be used to detect external light passing through the detection area HA of the display panel 100 and the backlight unit 200, or to capture an image. For example, the optical device 350 can include at least one camera or an IR sensor. The optical device 350 can be arranged below the backlight unit 200. The optical device 350 can be adhered to the rear of the cover base 250 with adhesive tape 400, but the present disclosure is not limited to this. The optical device 350 can be fastened to the rear of the cover base 250 with a fastener such as a screw or the like. The structure of the pixel area PA provided in the active area AA of the liquid crystal display panel 100 and the structure of the pixel area PA provided in the detection area may differ, as described in more detail below. Fig. 5 is a top view of pixel areas arranged in the active area AA of the liquid crystal display panel according to one embodiment of the present disclosure. Fig. 6 is a cross-sectional view along line III-III' in Fig. 5. Fig. 7 is a cross-sectional view along line IV-IV' in Fig. 5. Fig. 8 is a top view of pixel areas arranged in the detection area HA of the liquid crystal display panel according to one embodiment of the present disclosure. Fig. 9 is a cross-sectional view along line III-III' in Fig. 8. Fig. 10 is a cross-sectional view along line IV-IV' in Fig. 8. Since the configuration of the thin-film transistor Tr and the pixel electrode 130 is given in Fig. 4, Figs. 6 and 7, as well as Figs. 9 and 10, mainly illustrate the gate line GL, the data line DL, the pixel electrode 130, the color filter 151, and the black matrix 152. The remaining configuration is as shown in Fig. 4. As shown in Figures 5, 6, 7, 8, 9 to 10, the liquid crystal display panel 100 according to one embodiment of the present disclosure can include a liquid crystal layer LC arranged between a first display substrate 110 and a second display substrate 120. The liquid crystal display panel 100 has a plurality of pixel areas PA, and the pixel areas PA can include a red pixel area R, a green pixel area G, and a blue pixel area B. A plurality of gate lines GL and a plurality of data lines DL can be arranged on the first display substrate 110. The gate lines GL can be arranged to extend in a first direction X, and the data lines DL can be arranged to extend in a second direction Y, thereby defining a plurality of pixel areas PA. The gate insulating film 111 described in Fig. 4 can be arranged between the gate lines GL and the data lines DL. Each pixel area PA can contain a thin-film transistor Tr, arranged at the intersection of each gate line GL and each data line DL, and a pixel electrode 130, to which a drive voltage corresponding to the data signal is supplied via the thin-film transistor Tr. The pixel electrode 130 can be made of a transparent conductive material such as ITO or IZO. A common electrode 140 can be arranged below the pixel electrode 130. The pixel electrode 130 and the common electrode 140 can be electrically isolated from each other by an intermediate insulating film 114. The gate electrode of the thin-film transistor Tr can be integrally formed with the gate line GL or electrically connected to the gate line GL. The drain electrode of the thin-film transistor Tr can be integrally formed with the data line DL or electrically connected to the data line DL. The source electrode of the thin-film transistor Tr can be electrically connected to the pixel electrode 130. The black matrix 152 and the color filters 151 can be arranged on the second display substrate 120. The black matrix 152 can be arranged to cover the gate lines GL and data lines DL arranged on the first display substrate 110, as well as the thin-film transistor Tr arranged in each pixel area. The color filters 151 can overlap the pixel areas PA. For example, each color filter 151 can overlap one of the pixel areas PA. The color filters 151 can include a red color filter 151R, a green color filter 151G, and a blue color filter 151B. One end of each color filter 151 can overlap the black matrix 152. The ends of two adjacent color filters 151 can overlap on the black matrix 152. The color filters 151 and the black matrix 152 can be covered by an upper protective film 115. As shown in Figs. 5, 6 to 7, in the active area AA of the liquid crystal display panel according to an embodiment of the present disclosure, all data lines DL can be formed from an opaque metallic material such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti) or tungsten (W). On the other hand, as shown in Figures 8, 9 to 10, in the detection area HA of the display panel according to one embodiment of the present disclosure, all data lines DL can be formed partially from a transparent conductive material such as ITO or IZO and a metallic material such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W). For example, all data lines DL can include a first data line DL1 formed from a transparent conductive material such as ITO or IZO and a second data line DL2 formed from a metallic material such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W) on the first data line DL1 in a region where the gate line GL and the first data line DL1 overlap. The second data line DL2 can be in direct contact with the first data line DL1. As shown in Figures 8, 9 to 10, the data lines DL1 can be formed partially from a transparent conductive material such as ITO or IZO and a metallic material such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W).As shown in Figure 10, the first data line DL1 can be arranged on the gate line GL, with the gate insulating film 111 positioned in between. Furthermore, as shown in Figs. 5, 6 to 7, in the active area AA of the liquid crystal display panel according to an embodiment of the present disclosure, the black matrix 152 can be arranged on the second display substrate 120 to cover the gate lines GL and data lines DL arranged on the first display substrate 110 and the thin-film transistor Tr arranged in each pixel area. On the other hand, as shown in Figures 8, 9 to 10, in the detection area HA of the display panel according to one embodiment of the present disclosure, the black matrix 152 may not be arranged in a section that excludes an area where the gate lines GL and the data lines DL overlap. For example, the black matrix 152 may only be arranged in an area where the gate lines GL and the data lines DL overlap. Furthermore, as shown in Fig. 9, in the detection area HA of the liquid crystal display panel according to an embodiment of the present disclosure, the ends of two adjacent color filters 151 cannot overlap each other in an area where the black matrix 152 is not arranged. Fig. 11 is a cross-sectional view along line IV-IV' of Fig. 8 according to a further embodiment of the present disclosure. Although Fig. 10 describes that all data lines DL are provided, wherein the first data line DL1 is formed from a transparent conductive material, and the second data line DL2 is formed from a metal material on the first data line DL1 such that it is in direct contact with the first data line DL1 in an area where the gate line GL and the first data line DL1 overlap, the present disclosure is not limited thereto. For example, as shown in Fig. 11, a first data line DL1, formed from a transparent conductive material such as ITO or IZO, can be provided in a region that excludes an area where the gate line GL and the data line DL overlap. Furthermore, in the region where the gate line GL and the data line DL overlap, a second data line DL2, made from a metallic material such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W), can be formed to electrically connect adjacent first data lines DL1. As shown in Fig. 11, the first data line DL1 can be arranged on the same layer as the gate line GL, and the second data line DL2 can be arranged on top of the gate line GL, with the gate insulating film 111 positioned between them. As described in Figures 8, 9, 10 to 11, according to one embodiment of the present disclosure, the data lines DL in the detection area HA of the display panel are formed from a transparent conductive material, and the black matrix is ​​not formed in the detection area HA of the liquid crystal display panel, so that the transmittance of the detection area HA can be improved. Furthermore, since the transmittance of the detection area HA is improved, the detection rate of the optical device can be increased. As described in Figs. 8, 9, 10 to 11, in the detection area HA of the liquid crystal display panel according to an embodiment of the present disclosure, even if all data lines DL are partially formed from a transparent conductive material and a metal material, a separate masking process may not be added. Figures 12A to 12G are cross-sectional views of a process for forming data lines DL in the detection area HA of the liquid crystal display panel according to an embodiment of the present disclosure described in Figures 8, 9 to 10. As shown in Fig. 12A, a gate line GL extending in a first direction X can be formed on a first display substrate 110. The gate line GL can be a gate electrode of a thin-film transistor. A gate insulating film 111 can be formed on the front side of the first display substrate 110 containing the gate line GL. A semiconductor structure 122 corresponding to the gate electrode of the thin-film transistor can be formed on the gate insulating film 111 along the gate line GL. As shown in Fig. 12B, a transparent conductive material layer 142 of ITO or IZO and a metal material layer 143 of aluminium (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti) or tungsten (W) can be successively formed on the front side of the first display substrate 110 formed as above. As shown in Fig. 12C, a photoresist can be formed on the metal material layer 143, and a photoresist structure PR can be formed by exposure and development processes using a halftone mask. The photoresist structure PR can be structured so that it remains only in the area where data lines DL are to be arranged. The photoresist structure PR can be structured such that the thickness of an area where a second data line DL2 is to be arranged is greater than the thickness of an area where a first data line DL1 is to be arranged. As shown in Fig. 12D, the transparent conductive material layer 142 and the metal material layer 143 can be removed using the photoresist structure PR as a mask. Accordingly, the first data line DL1 can be formed from the conductive material layer 142. As shown in Fig. 12E, the photoresist structure PR is removed by an ashing process, so that it remains only at one location where the second data line DL2 is to be formed. As shown in Fig. 12F, the metal material layer 143 can be removed using the photoresist structure PR as a mask. Accordingly, the second data line DL2 can be formed from the metal material layer 143. As shown in Fig. 12G, the photoresist structure PR is completely removed. As described in Figs. 12A to 12G, even if all data lines DL are partially formed from a transparent conductive material and a metal material, it may not be possible to add a separate masking process. Meanwhile, Figures 13A to 13G show cross-sectional views of a process for forming data lines DL in the detection area HA of the liquid crystal display panel according to a further embodiment of the present disclosure, which is described in Figure 11. As shown in Fig. 13A, a transparent conductive material layer 142 of ITO or IZO and a metal material layer 143 of aluminium (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti) or tungsten (W) can be successively formed on the front side of a first display substrate 110. As shown in Fig. 13B, a photoresist can be formed on the metal material layer 144, and a photoresist structure PR can be formed by exposure and development processes using a halftone mask. The photoresist structure PR can be structured so that it remains only in the area where a gate line GL and a first data line DL1 are to be arranged. The photoresist structure PR can be structured such that the thickness of an area where the gate line GL is to be arranged is greater than the thickness of an area where the first data line DL1 is to be arranged. As shown in Fig. 13C, the transparent conductive material layer 142 and the metal material layer 143 can be removed using the photoresist structure PR as a mask. Accordingly, the first data line DL1 can be formed from the conductive material layer 142. The first data line DL1 can extend in the second direction Y. As shown in Fig. 13D, the photoresist structure PR is removed by an ashing process, so that it remains only at one location where the gate line GL is to be formed. As shown in Fig. 13E, the metal material layer 143, located on the first data line DL1, can be removed using the photoresist structure PR as a mask. Accordingly, the gate line GL can be formed from the metal material layer 144. The gate line GL can have a stacked structure consisting of the transparent conductive material layer 142 and the metal material layer 144. The gate line GL can extend in the first direction X. The gate line GL can be a gate electrode of a thin-film transistor. As shown in Fig. 13F, after complete removal of the photoresist structure PR, a gate insulating film 111 can be formed on the front side of the first display substrate 110, which contains the gate line GL and the first data line DL1. A semiconductor structure 122 can be formed on the gate insulating film 111 on the gate line GL corresponding to the gate electrode of the thin-film transistor. Furthermore, a contact hole C can be formed in the gate insulating film 111, so that both ends of the first data line DL1 are exposed. As shown in Fig. 13G, a second data line DL2 can be formed on the gate insulating film 111, which contains the semiconductor structure 122, using a metallic material such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W). The second data line DL2 can intersect the gate line GL. The second data line DL2 can serve to electrically connect adjacent first data lines DL1 via the contact hole C formed in the gate insulating film 111. As described in Figs. 13A to 13G, even if all data lines DL are partially formed from a transparent conductive material and a metal material, it may not be possible to add a separate masking process. Fig. 14 is a diagram showing the resistance of data lines according to an example from the present disclosure and a comparison example. As described above, even if the data line in the detection area is made of a transparent conductive material, no major problem can occur with data control. As shown in Fig. 14, the resistance of the data line formed from the transparent conductive material located in the sensing area can increase significantly if the line width CD of the data line formed from the transparent conductive material located in the sensing area is designed to be identical to the line width CD of the data line formed from the opaque metal layer located in the pixel area. However, if the conductor width CD of the data line made from the transparent conductive material located in the detection area is larger than the conductor width CD of the data line made from the opaque metal layer located in the pixel area, the resistance of the data line made from the transparent conductive material located in the detection area cannot increase significantly. For example, if, as in a reference example (Ref), the conductor width CD of the data line from the opaque metal layer located in the pixel area is set to 3.5 µm, the resistance of the data line is approximately 4286 Ω. However, if both the conductor width CD of the data line made of the transparent conductive material located in the detection area and the conductor width CD of the data line made of the opaque metal layer located in the pixel area are set to 3.5 µm, the resistance of the data line approximately doubles to about 9086 Ω. However, if the conductor width CD of the data line from the transparent conductive material located in the sensing area is set to 12 µm and the conductor width CD of the data line from the opaque metal layer located in the pixel area is set to 3.5 µm, as in a comparison example, the resistance of the data line is approximately 5600 Ω, which can be considered similar to that in the reference example. Therefore, in embodiments of the present disclosure, by increasing the line width CD of the first data line made of the transparent conductive material arranged in the detection area, a sufficient data voltage can be applied to each pixel. Further embodiments of the display device disclosed herein are described in the following paragraphs. In certain embodiments, a display device includes a liquid crystal display panel comprising a first display substrate 110 and a second display substrate 120, which is opposite the first display substrate 110. A liquid crystal layer LC is arranged between the first and second display substrates. The liquid crystal display panel includes an active area with a plurality of pixel areas defined by a plurality of gate lines GL extending in a first direction and a plurality of data lines DL extending in a second direction intersecting the first direction. A sensing area is arranged within the active area. A gate insulating film 111 is arranged on the first display substrate and covers the gate lines. A plurality of first data lines DL1 are arranged in the sensing area and extend in the second direction on the gate insulating film 111.Each first data line DL1 comprises a transparent conductive material, such as indium tin oxide (ITO) or indium zinc oxide (IZO). A plurality of second data lines DL2 are also arranged in the detection area and comprise a metallic material, such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W). The display device further includes a backlight unit 200, which is arranged below the liquid crystal display panel 100, and an optical device 350, which is arranged below the backlight unit 200 and overlaps the detection area HA. In some embodiments, every second data line is located in a region where the corresponding first data line intersects one of the gate lines and is in direct contact with it. The second data lines can be located in regions aligned with the intersections between the first data lines and the gate lines to provide low-resistance bridging connections. In certain configurations, every second data line is arranged above a corresponding gate line, with the gate insulating film 111 positioned between the second data line and the gate line. This layered arrangement provides electrical isolation between the gate lines and the second data lines, while maintaining vertical alignment in the overlapping areas. The first data lines within the detection range can be wider than the data lines located in the active area outside the detection range. This increased line width can reduce the electrical resistance of the transparent conductive material and ensure sufficient data signal transmission within the detection range. In some embodiments, the second data lines are only located in areas where the first data lines intersect the gate lines. Outside of these intersection areas, the data lines in the detection area may consist entirely of the transparent conductive material to increase or maximize optical transmittance. The display device may further include a black matrix 152, which is arranged on the second display substrate 120 in the active area, excluding the detection area. The black matrix 152 may be oriented to block light from unwanted areas and improve the image contrast in the active area. In certain embodiments, the black matrix 152 is completely omitted from the detection area. The absence of a black matrix 152 in the detection area improves the light transmission towards the optical device located below the panel. The black matrix 152 can be aligned to cover areas where the gate lines and data lines intersect in the active area, except for the detection area. This alignment can prevent the visibility of signal lines and improve contrast without impairing the detection function. In some embodiments, the black matrix 152 is not positioned over any section of the detection area that does not correspond to a gate line or data line. This structure reduces or minimizes interference with light transmission in the detection area, while optionally maintaining partial masking at signal line crossings. The display device can also contain multiple color filters arranged on the second display substrate 120. Within the detection area, the ends of adjacent color filters can be spaced apart without overlapping. This configuration reduces the accumulation of optical layers and improves the clarity of light transmission through the detection area. In other embodiments, the display device includes a plurality of color filters and a black matrix arranged on the second display substrate 120 in the active area, with the exception of the detection area. In the active area outside the detection area, the ends of adjacent color filters can overlap on the black matrix. This structure preserves color purity and prevents light leakage between adjacent subpixels in the display area. In certain configurations, the optical device 350 is arranged to receive external light through the detection area without interference from the black matrix or the multiple secondary data lines. In these cases, the structural arrangement of the detection area, including the use of transparent conductive material and the omission of opaque elements, improves the detection rate of the optical device. The display device may further include a thin-film transistor in each pixel area, wherein the thin-film transistor includes a gate electrode formed integrally with one of the gate lines and a drain electrode formed integrally with one of the first data lines. As can be seen from the foregoing, a display device and a method for manufacturing a liquid crystal display panel according to the technical spirit of the present disclosure have the following effects. First, the transmittance of the detection area can be improved because the data lines in the detection area of ​​the liquid crystal display panel are made of a transparent conductive material, and no black matrix is ​​formed in the detection area of ​​the liquid crystal display panel. Furthermore, because the transmittance of the detection area HA is improved, the detection rate of an optical device can be increased. Secondly, process optimization can be achieved in the detection area of ​​the liquid crystal display panel, as no separate masking process is added, even if all data lines are partially formed from a transparent conductive material and a metal material. The various embodiments described above can be combined to provide further embodiments.

Claims

A display device comprising: a liquid crystal display panel (100) having an active area (AA) in which a plurality of pixel areas (PA) are defined by a plurality of gate lines (GL) and a plurality of data lines (DL) intersecting each other, and a border area (BZ) arranged outside the active area (AA), wherein the active area (AA) has a detection area (HA); a backlight unit (200) located below the liquid crystal display panel (100);and an optical device (350) configured to detect external light passing through the detection area (HA) of the liquid crystal display panel (100) or to capture an image, wherein the data lines (DL) arranged in the active area (AA) except for the detection area (HA) are made of a metallic material, and the data lines (DL) arranged in the detection area (HA) are made of a transparent conductive material. The display device according to claim 1, wherein each data line (DL) arranged in the detection area (HA) has the transparent conductive material in an area that excludes an area that intersects each gate line (GL), and has the metal material in the area that intersects each gate line (GL). The display device according to claim 2, wherein each data line (DL) arranged in the detection area (HA) comprises: a first data line (DL1) with the transparent conductive material and a second data line (DL2) with the metal material on the first data line (DL1), such that it is in direct contact with the first data line (DL1) in the area which intersects the gate lines (GL). The display device according to claim 3, wherein a width of the first data lines (DL1) in the detection area (HA) is greater than a width of the data lines (DL) that are arranged in the active area (AA) outside the detection area (HA). The display device according to claim 2, wherein each data line (DL) arranged in the detection area (HA) comprises: a first data line (DL1) with the transparent conductive material arranged in the area excluding the area that intersects each gate line (GL), and a second data line (DL2) arranged in the area that intersects each gate line (GL), electrically connects adjacent first data lines (DL1), and comprises the metal material. The display device according to claim 5, wherein a width of the first data lines (DL1) in the detection area (HA) is greater than a width of the data lines (DL) that are arranged in the active area (AA) outside the detection area (HA). The display device according to claim 5 or 6, further comprising: a gate insulating film (111) covering the plurality of gate lines (GL), wherein the first data line (DL1) is arranged on the same layer as the plurality of gate lines (GL), and wherein the second data line (DL2) is arranged on the gate insulating film (111). The display device according to one of claims 1 to 7, which further comprises a black matrix (152) arranged in the active area (AA) except for the detection area (HA) of the liquid crystal display panel (100), wherein the black matrix (152) is not arranged in the detection area (HA) of the liquid crystal display panel (100). The display device according to claim 8, wherein the black matrix (152) is arranged only at intersections between the gate lines (GL) and the data lines (DL) in the detection area (HA) of the liquid crystal display panel (100). The display device according to claim 8 or 9, wherein the black matrix (152) is oriented such that it covers areas where the gate lines (GL) and the data lines (DL) intersect in the active area (AA), except for the detection area (HA). The display device according to any one of claims 8 to 10, wherein the black matrix (152) is not arranged over any section of the detection area (HA) that does not correspond to a gate line (GL) or data line (DL). The display device according to one of claims 8 to 11, wherein the optical device (350) receives external light through the detection area (HA) without interference from the black matrix (152) during operation. The display device according to one of claims 8 to 12, which further comprises a color filter layer (151) arranged in each pixel area (PA), wherein the ends of adjacent color filter layers (151) do not overlap in the detection area (HA) of the liquid crystal display panel (100). The display device according to claim 13, wherein the ends of adjacent color filter layers (151) overlap in the active area (AA) except for the detection area (HA) of the liquid crystal display panel (100). The display device according to one of claims 1 to 14, further comprising a thin-film transistor (Tr) comprising a gate electrode (121) integrally formed with one of the multiple gate lines (GL) and a drain electrode (123) integrally formed with one of the multiple data lines (DL). A method for manufacturing a display panel (100) with an active area (AA) in which a plurality of pixel areas (PA) are defined by a plurality of gate lines (GL) and a plurality of data lines (DL) that intersect each other, and a border area (BZ) located outside the active area (AA), wherein the active area (AA) has a sensing area (HA), comprising: forming a gate line (GL) with a gate electrode (121) on a substrate (110) in the sensing area (HA); forming a gate insulating film (111) on the substrate (110) having a gate line (GL); forming a semiconductor structure (122) on the gate insulating film (111) on the gate electrode (121);and forming a first data line (DL1) using a conductive material on the gate insulating film (111) in a direction that intersects the gate line (GL), and a second data line (DL2) using a metallic material such that it is in contact with the first data line (DL1) in an area that intersects the gate line (GL). The method according to claim 16, wherein the formation of the first data line (DL1) and the second data line (DL2) comprises: successively forming a transparent conductive material layer (142) and a metal material layer (143) on the gate insulating film (111); forming a photoresist structure (PR) with a greater thickness in an area where the second data line (DL2) is to be arranged, compared to an area where the first data line (DL1) is to be arranged, using a halftone mask; removing the transparent conductive material layer (142) and the metal material layer (143) using the photoresist structure (PR) as a mask; and ashing the photoresist structure (PR) so that it remains only in the area where the second data line (DL2) is to be formed.and forming the first data line (DL1) and the second data line (DL2) by removing the metal material layer (143) using the ashed photoresist structure (PR) as a mask. A method for fabricating a liquid crystal display panel (100) with an active area (AA) in which a plurality of pixel areas (PA) are defined by a plurality of gate lines (GL) and a plurality of intersecting data lines (DL), and a border area (BZ) located outside the active area (AA), wherein the active area (AA) has a sensing area (HA), comprising: forming a gate line (GL) with a gate electrode (121) extending in a first direction on a substrate (110) in the sensing area (HA), and a plurality of first data lines (DL1) using a conductive material in a direction intersecting the gate line (GL); forming a gate insulating film (111) on the substrate (110) having the gate line (GL) and the first data lines (DL1); forming a semiconductor structure (122) on the gate insulating film (111) on the gate electrode (121);and forming a second data line (DL2) using a metallic material on the gate insulating film (111) in a direction that intersects the gate line (GL) to electrically connect adjacent first data lines (DL1). The method according to claim 18, wherein the formation of the gate line (GL) and the first data lines (DL1) comprises: successively forming a transparent conductive material layer (142) and a metal material layer (143) on the substrate (110); forming a photoresist structure (PR) with a greater thickness in an area where the gate line (GL) is to be arranged than in an area where the first data lines (DL1) are to be arranged, using a halftone mask in the area where the first data lines (DL1) are to be arranged and in the area where the gate line (GL) is to be arranged; removing the transparent conductive material layer (142) and the metal material layer (143) using the photoresist structure (PR) as a mask; ashing the photoresist structure (PR) so that it remains only in one location where the gate line (GL) is to be formed;and forming the gate line (GL) and the first data lines (DL1) by removing the metal material layer (143) using the ashed photoresist structure (PR) as a mask.;

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