Light-emitting display apparatus
By integrating an insulating layer between semiconductor patterns and optimizing electrode placement, the manufacturing process of LED display devices is simplified, enhancing stability and reducing power consumption, thus addressing the complexity and performance issues of TFTs in LED displays.
Patent Information
- Authority / Receiving Office
- GB · GB
- Patent Type
- Patents
- Current Assignee / Owner
- LG DISPLAY CO LTD
- Filing Date
- 2022-11-17
- Publication Date
- 2026-07-02
AI Technical Summary
The manufacturing process of thin-film transistors (TFTs) in LED display devices is complicated due to the use of different semiconductor patterns, such as polycrystalline silicon and oxide semiconductors, which require separate processes and increase power consumption when displaying still images, leading to leakage currents and screen blurring.
Incorporating an insulating layer between semiconductor patterns of different types of TFTs, disposing gate electrodes and source/drain electrodes on the same layer, and using blocking layers below TFTs to enhance stability and reduce process complexity.
This configuration improves display quality and stability by protecting semiconductor patterns, reducing process complexity, and preventing screen blurring while minimizing power consumption.
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Abstract
Citation Information
Patent Citations
Display device
EP3644364A1
Display apparatus
GB2580210A
Display device
US20170338252A1