Near-infrared light-emitting diode and method for manufacturing the same

Abstract

This invention provides a near-infrared light-emitting diode and a method for manufacturing the same. [Solution] The near-infrared light-emitting diode includes a substrate, an epitaxial composite layer, an upper electrode, and a black photoresist. The epitaxial composite layer is placed on the substrate and has an emission layer with an emission wavelength of 750 nanometers (nm) to 1000 nanometers (nm). The upper electrode is placed on the upper surface of the epitaxial composite layer. The black photoresist covers the epitaxial composite layer, exposing only the upper electrode, absorbing visible light wavelengths, and allowing only infrared light to pass through the black photoresist and be emitted to the outside.

Claims

1. A near-infrared light-emitting diode, circuit board and An epitaxial composite layer is provided on the substrate and has an emissive layer with an emission wavelength of 750 nanometers (nm) to 1000 nanometers (nm), An upper electrode is placed on the upper surface of the epitaxial composite layer, A near-infrared light-emitting diode comprising a black photoresist that covers the epitaxial composite layer, exposing only the upper electrode, and which absorbs visible light wavelengths and allows only infrared light to pass through and be emitted to the outside.

2. The near-infrared light-emitting diode according to claim 1, characterized in that the wavelength of infrared light transmitted through the black photoresist and emitted to the outside is between 850 nanometers (nm) and 940 nanometers (nm).

3. The near-infrared light-emitting diode according to claim 1, characterized in that the thickness of the black photoresist is approximately 1 to 5 micrometers (μm).

4. The near-infrared light-emitting diode according to claim 1, characterized in that the material of the black photoresist comprises 1-methoxy-2-propanol acetate and cyclohexanone.

5. The near-infrared light-emitting diode according to claim 1, characterized in that the epitaxial composite layer further includes a P-type epitaxial layer and an N-type epitaxial layer sandwiching the light-emitting layer.

6. The near-infrared light-emitting diode according to claim 5, characterized in that the material of the P-type epitaxial layer and the N-type epitaxial layer comprises gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs), and the material of the light-emitting layer comprises indium gallium arsenide (InGaAs) or aluminum gallium arsenide (AlGaAs).

7. The near-infrared light-emitting diode according to claim 1, characterized in that the substrate is a gallium arsenide (GaAs) substrate or a silicon (Si) substrate.

8. A method for manufacturing a near-infrared light-emitting diode, A step of forming an epitaxial composite layer on a substrate having an emissive layer with an emission wavelength of 750 nanometers (nm) to 1000 nanometers (nm), The steps include: installing an upper electrode on the upper surface of the epitaxial composite layer; The process includes a step of installing a black photoresist that covers the epitaxial composite layer and exposes only the upper electrode, A method for manufacturing a near-infrared light-emitting diode, wherein the black photoresist absorbs light of visible wavelengths, and allows only infrared light to pass through the black photoresist and be emitted to the outside.

9. The step of installing the black photoresist involves installing the black photoresist with a thickness of approximately 1 to 5 micrometers (μm). The method for producing a near-infrared light-emitting diode according to claim 8, characterized in that the material of the black photoresist comprises 1-methoxy-2-propanol acetate and cyclohexanone.

10. The method for manufacturing a near-infrared light-emitting diode according to claim 8, characterized in that the step of forming the epitaxial composite layer is to form a P-type epitaxial layer and an N-type epitaxial layer sandwiching the light-emitting layer.

11. The material of the P-type epitaxial layer and the N-type epitaxial layer comprises gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs). The method for manufacturing a near-infrared light-emitting diode according to claim 10, characterized in that the material of the light-emitting layer includes indium gallium arsenide (InGaAs) or aluminum gallium arsenide (AlGaAs).

12. The method for manufacturing a near-infrared light-emitting diode according to claim 8, characterized in that the substrate is a gallium arsenide (GaAs) substrate or a silicon (Si) substrate.

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