Illumination light source and illumination device

WO2026114205A1PCT designated stage Publication Date: 2026-06-04NARVELLUX TECH (SHENZHEN) CO LTD

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
NARVELLUX TECH (SHENZHEN) CO LTD
Filing Date
2025-11-25
Publication Date
2026-06-04

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Abstract

An illumination light source and an illumination device. The illumination light source comprises at least one light-emitting diode chip (100) that emits light of at least two wavebands; the emitted light at least comprises a plurality of wavelengths in a waveband of 420-740 nm, has spectral continuity, and at least comprises two characteristic wavelengths, the two characteristic wavelengths comprising at least one wavelength of 470-520 nm and at least one wavelength of 540-600 nm. The illumination light source using the light-emitting diode chips (100) capable of emitting light of at least two wavebands has full-spectrum continuity and a high color rendering index, thereby providing a high degree of color fidelity of objects at night and improving the recognition capability of night travelers; and the illumination light source further has a plurality of characteristic wavelengths on the basis of the full spectrum, such that the illumination light source has the characteristics of high photopic and scotopic luminous efficacy, high road surface reflectance, high penetration through rain, fog, and haze, and improved alertness, outdoor illumination safety is comprehensively considered, and night travel safety is guaranteed.
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Description

Lighting source and lighting device

[0001] This application claims priority to Chinese Patent Application No. 202411742645.2, filed with the Chinese Patent Office on November 29, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of lighting technology, such as a lighting source and lighting device. Background Technology

[0003] In the field of outdoor lighting applications, lighting sources have evolved from incandescent lamps, mercury lamps, and high-pressure sodium lamps to light-emitting diode (LED) lamps. LED light sources have advantages such as energy saving and environmental protection, long lifespan, and high luminous efficiency. Compared with previous light sources, their luminous efficacy and color rendering index have been significantly improved, so they are widely used in the lighting field.

[0004] However, the LED outdoor lighting source technology does not fully consider the actual situation of nighttime lighting, and the safety of outdoor lighting is not fully considered when designing the light source. Summary of the Invention

[0005] This application provides a lighting source and lighting device that improves the visibility of nighttime travelers and ensures the safety of nighttime travel.

[0006] According to one aspect of this application, a lighting source is provided, comprising at least one light-emitting diode chip that emits light in at least two wavelengths;

[0007] The emitted light from the illumination source contains at least multiple wavelengths in the 420nm~740nm band and has spectral continuity, with an interval of 5nm~60nm between two adjacent wavelengths, and a half-width of 10nm~60nm for each wavelength.

[0008] The emitted light from the illumination source also includes a characteristic wavelength, which is a wavelength in which the light power accounts for more than or equal to 10% of the total light power; the characteristic wavelength includes at least a first characteristic wavelength and a second characteristic wavelength, the first characteristic wavelength includes at least one wavelength in the 470nm~520nm band, and the second characteristic wavelength includes at least one wavelength in the 540nm~600nm band.

[0009] Optionally, the optical power corresponding to the first characteristic wavelength accounts for ≥10% of the total optical power, and the optical power corresponding to the second characteristic wavelength accounts for ≥20% of the total optical power.

[0010] Optionally, the characteristic wavelength may further include a third characteristic wavelength, which includes at least one wavelength in the 600nm~660nm band.

[0011] Optionally, the optical power corresponding to the third characteristic wavelength accounts for ≥20% of the total optical power.

[0012] Optionally, the first characteristic wavelength includes a first sub-characteristic wavelength and a second sub-characteristic wavelength, wherein the first sub-characteristic wavelength is located in the 485nm~495nm band and the second sub-characteristic wavelength is located in the 500nm~510nm band.

[0013] The second characteristic wavelength includes a third sub-characteristic wavelength and a fourth sub-characteristic wavelength, wherein the third sub-characteristic wavelength is located in the 540nm~570nm band and the fourth sub-characteristic wavelength is located in the 570nm~600nm band;

[0014] The optical power corresponding to the first sub-characteristic wavelength, the second sub-characteristic wavelength, the third sub-characteristic wavelength, and the fourth sub-characteristic wavelength all account for ≥10% of the total optical power.

[0015] Optionally, the first characteristic wavelength is located in the 485nm~505nm band, and the second characteristic wavelength is located in the 565nm~590nm band.

[0016] Optionally, the optical power corresponding to the first characteristic wavelength accounts for ≥10% of the total optical power, the optical power corresponding to the second characteristic wavelength accounts for ≥30% of the total optical power, and the optical power corresponding to the third characteristic wavelength accounts for ≥30% of the total optical power.

[0017] Optionally, the emitted light from the illumination source may further include at least one of light in the 400nm~420nm band or light in the 740nm~1.7μm band.

[0018] Optionally, the light-emitting diode chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, wherein the first light-emitting layer is located on the side of the second light-emitting layer closer to the P-type semiconductor layer;

[0019] The first light-emitting layer generates light of at least one wavelength in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of at least one wavelength.

[0020] Optionally, the wavelength of the light generated by the first light-emitting layer includes at least one of the following: violet, blue, cyan, and green.

[0021] The light emitted by the second light-emitting layer corresponds to at least one of the following wavelengths: violet, blue, cyan, green, yellow, red, and infrared.

[0022] At least one wavelength of the light emitted by the first light-emitting layer is less than all wavelengths of the light emitted by the second light-emitting layer.

[0023] Optionally, the lighting source includes a light-emitting diode chip, and the light emitted by the light-emitting diode chip after packaging forms the emitted light of the lighting source.

[0024] Optionally, the lighting source includes at least two of the light-emitting diode chips, and the light generated by the at least two light-emitting diode chips after being packaged is mixed to form the emitted light of the lighting source.

[0025] Optionally, it may also include at least one single-wavelength chip that generates light of a single wavelength.

[0026] Optionally, the light generated by at least one of the light-emitting diode chips and at least one of the single-wavelength chip packages is mixed to form the emitted light of the lighting source.

[0027] Optionally, a color conversion layer may also be included, which is disposed on at least a portion of the light-emitting side of the light-emitting diode chip.

[0028] Optionally, at least one of the light-emitting diode chips is mixed with the light generated after being packaged with the color conversion layer to form the emitted light of the lighting source.

[0029] Optionally, the color conversion layer includes at least one color conversion material, and the wavelengths of the light converted by different color conversion materials are different.

[0030] Optionally, the color conversion material includes quantum dot materials or fluorescent materials, and the light converted by the color conversion material is located in the blue band, green band, cyan band, yellow band, red band or infrared band.

[0031] Optionally, the lighting source further includes at least one single-wavelength chip and a color conversion layer, wherein the single-wavelength chip generates light of a single wavelength, and the color conversion layer is disposed on the light-emitting side of at least one of the light-emitting diode chip or the single-wavelength chip.

[0032] Optionally, at least one of the light-emitting diode chips, at least one of the single-wavelength chips, and the light generated after the color conversion layer is packaged together form the emitted light of the lighting source.

[0033] According to another aspect of this application, a lighting device is provided, including the lighting source described above.

[0034] Optionally, it also includes an insect-repelling light source, which emits light in the 560nm~600nm wavelength band.

[0035] Optionally, the insect-repelling light source and the illumination light source are electrically connected to the same illumination body or electrically connected to different illumination bodies. Attached Figure Description

[0036] Figure 1 is a schematic diagram of the spectrum of a lighting source;

[0037] Figure 2 is a schematic diagram of the human eye's visual response to light and dark.

[0038] Figure 3 is a schematic diagram of the physiological rhythms of the human body;

[0039] Figure 4 shows a schematic diagram of the spectral reflectance of different road surfaces;

[0040] Figure 5 is a schematic diagram of the scattering curves of light at different wavelengths;

[0041] Figure 6 is a schematic diagram of a spectrum corresponding to Table 5;

[0042] Figure 7 is another spectral schematic diagram corresponding to Table 5;

[0043] Figure 8 is a schematic diagram of the spectrum corresponding to Table 6;

[0044] Figure 9 is a schematic diagram of the structure of a light-emitting diode chip provided in an embodiment of this application;

[0045] Figure 10 is a schematic diagram of the structure of a lighting source provided in an embodiment of this application;

[0046] Figure 11 is a schematic diagram of the structure of a lighting source provided in an embodiment of this application;

[0047] Figure 12 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0048] Figure 13 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0049] Figure 14 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0050] Figure 15 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0051] Figure 16 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0052] Figure 17 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0053] Figure 18 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0054] Figure 19 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0055] Figure 20 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0056] Figure 21 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0057] Figure 22 is a schematic diagram of another lighting source provided in an embodiment of this application;

[0058] Figure 23 is a schematic diagram of the structure of an insect-repelling light source provided in an embodiment of this application. Detailed Implementation

[0059] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0060] Figure 1 shows a schematic diagram of the spectrum of a lighting source, commonly used as a street light. This source has the following parameters: color temperature (CCT) = 4000K, color rendering index (Ra) = 70, luminous flux = 365 lm, photopic luminous efficacy = 173 lm / W, scotopic luminous efficacy = 257 lm / W, color coordinates (x, y) are (0.3835, 0.3801), and spectral composition: 450nm + 540nm + 610nm. This light source has the advantages of high luminous efficacy and high reliability; however, for street light applications, scotopic response has not been considered.

[0061] Some of the related technologies are used for outdoor lighting sources, but they do not fully consider the actual conditions of nighttime lighting, nor do they take into account the recognition characteristics of rod cells, resulting in low dark vision efficiency. In addition, the lighting sources do not fully consider the safety of outdoor lighting, which may pose a hazard to nighttime travel.

[0062] This application provides a lighting source, including at least one light-emitting diode (LED) chip, which emits light in at least two wavelength bands; the emitted light of the lighting source includes multiple wavelengths in the 420nm~740nm band and has spectral continuity, with adjacent wavelengths spaced 5nm~60nm apart, and the half-width at half-maximum (WHM) of each wavelength ranging from 10nm to 60nm; in addition, it also has prominent characteristic wavelengths, which are wavelengths whose light power accounts for more than or equal to 10% of the total light power, and the characteristic wavelengths include at least a first characteristic wavelength and a second characteristic wavelength, the first characteristic wavelength including at least one wavelength in the 470nm~520nm band, and the second characteristic wavelength including at least one wavelength in the 540nm~600nm band.

[0063] The light-emitting diode (LED) chip can be any single-core multi-wavelength chip. The number of wavelengths, specific wavelengths, characteristic wavelengths and half-peak widths (WHMs) of different wavelengths, and the intensity ratio of different wavelengths can be selected as needed to form the lighting source of this application embodiment. For example, in one embodiment, different single-core multi-wavelength LED chips are selected according to different outdoor safety lighting requirements. The characteristic wavelengths and WHMs can be precisely adjusted using multiple different wavelengths, and the intensity ratio of different wavelengths can also be precisely adjusted. That is, the spectral design of outdoor safety lighting is not limited by the chip. The single-core multi-wavelength chip can be purely electroluminescent or a combination of electroluminescence and photoluminescence. For example, a single-core multi-wavelength chip combining electroluminescence and photoluminescence can be used, or the photoluminescent layer can be embedded between P-semiconductor and N-semiconductor layers. A single-core multi-wavelength chip employing a combined electroluminescence and photoluminescence mechanism offers the advantage of good spectral stability with current variations. Furthermore, the photoluminescent layer in this chip is embedded between the P-semiconductor and N-semiconductor layers, resulting in higher external quantum efficiencies for both the photoluminescence and electroluminescence mechanisms compared to traditional LEDs. This is because the photoluminescent layer releases stress earlier, improving the external quantum efficiency of the electroluminescent layer. Simultaneously, the photoluminescent layer itself possesses high crystal quality and undergoes multiple reflections and absorptions between the PN junctions, leading to higher external quantum efficiencies than traditional chips. The LED chip can be packaged using various methods, resulting in simple packaging processes, driving methods, and control methods, facilitating cost control and easily obtaining the illumination spectrum provided in the example lighting source. Moreover, the size of the multi-wavelength chip and LED chip assembly can be flexibly adjusted, reducing costs and improving reliability and lifespan. The inventors have discovered that the first characteristic wavelength... Light in the specified wavelength band can enhance dark vision lighting effects; the first characteristic wavelength is optional. The corresponding optical power accounts for ≥10% of the total optical power. In specific implementation, It can be multiple different characteristic wavelengths Second characteristic wavelength Light in the specified wavelength band can enhance photopic vision efficiency; optional, second characteristic wavelength. The corresponding optical power accounts for ≥20% of the total optical power. In specific implementation, It can be multiple different characteristic wavelengths Figure 2 is a schematic diagram of the human eye's light and dark visual response. Referring to Figure 2, it can be seen that the human eye is most sensitive to light in the 555nm wavelength band in a photopic vision environment and most sensitive to light in the 505nm wavelength band in a scotopic vision environment. Therefore, in a certain possible implementation method... It contains a characteristic wavelength of 505nm, thereby further improving the light effect for dark vision. It includes a characteristic wavelength of 555nm, thereby further improving photopic vision efficiency. Meanwhile, the ambient illuminance for scotopic vision meets... The ambient illuminance meets the requirements for photopic vision. .

[0064] Additionally, Figure 3 illustrates the physiological rhythms of the human body. Referring to Figure 3, light with higher Equivalent Melanopic Lux (EML) increases alertness, while light with lower EML promotes melatonin secretion and decreases alertness. Therefore, setting a wavelength that highlights the first characteristic is crucial. Furthermore, the light power accounts for more than 10% of the total light power, which makes the outdoor lighting source highly alert and improves outdoor safety.

[0065] Second characteristic wavelength It can improve the reflectivity of the road surface. Figure 4 is a schematic diagram of the spectral reflectivity of different road surfaces. Figure 4 is taken from "Discrimination Analysis of Road Surface Materials Based on Spectral Characteristics" published by Zhang Yingxue in 2017. Different characteristic wavelengths can be selected for different road sections. For example, 540nm~600nm is selected for asphalt concrete road sections, and 580nm~600nm is selected for cement concrete road sections.

[0066] In another possible implementation, the characteristic wavelength may optionally include a third characteristic wavelength. The third characteristic wavelength Includes at least one wavelength in the 600nm~660nm band. Optional, a third characteristic wavelength. The corresponding optical power accounts for ≥20% of the total optical power.

[0067] In outdoor lighting environments, dust and other particles are present; in rain and fog environments, fog particles and raindrops are present. These particles, fog particles, and raindrops easily scatter light waves, affecting their penetration. When the diameter of the scattering particles in the air is smaller than the wavelength of light, Rayleigh scattering is the primary phenomenon, and the intensity of Rayleigh scattering is inversely proportional to the fourth power of the wavelength. When the diameter of the scattering particles in the air is approximately equal to the wavelength of light, Mie scattering is the primary phenomenon, and the intensity of Mie scattering is inversely proportional to the square of the wavelength. Figure 5 shows a schematic diagram of the scattering curves of light at different wavelengths. As can be seen from Figure 5, the longer the wavelength, the smaller the scattering and the stronger the penetration in rain and fog. By setting a third characteristic wavelength λ3, and ensuring that the light power accounts for more than or equal to 20%, the penetration of rain, fog, and haze is further improved, and the road surface reflectivity is increased. This allows nighttime travelers, or those traveling in severe nighttime weather, to have a longer and clearer view, thus improving outdoor safety.

[0068] Optionally, as one approach, referring to Table 1, the first characteristic wavelength λ1 includes the first sub-characteristic wavelength λ. 1a Second sub-characteristic wavelength λ 1b The first sub-characteristic wavelength λ 1a Located in the 485nm~495nm band, the second sub-characteristic wavelength λ 1b Located in the 500nm~510nm band; the second characteristic wavelength λ2 includes the third sub-characteristic wavelength λ 2a and the fourth sub-characteristic wavelength λ 2b The third sub-characteristic wavelength λ 2a Located in the 540nm~570nm band, the fourth sub-characteristic wavelength λ 2b Located in the 570nm~600nm band; first sub-characteristic wavelength λ 1a Second sub-characteristic wavelength λ 1b The third sub-characteristic wavelength λ 2a and the fourth sub-characteristic wavelength λ 2b The corresponding optical power accounts for ≥10% of the total optical power.

[0069] Set λ 1a Located in the 485nm~495nm wavelength band, with optical power accounting for more than or equal to 10% of the total optical power, extremely high EML can be obtained. Setting λ... 1b Located in the 500nm~510nm wavelength band, it can achieve high dark visual light effect.

[0070] Table 1 shows the parameters of Scheme 1 provided in the embodiments of this application.

[0071]

[0072] Based on Scheme 1, in another implementation method, referring to Table 2, the lighting source also includes a third characteristic wavelength λ3. The third characteristic wavelength λ3 includes at least one wavelength in the 600nm~660nm band, and the light power corresponding to the third characteristic wavelength λ3 accounts for ≥20% of the total light power. This not only improves alertness and dark vision light efficiency, but also further enhances rain, fog, haze penetration and road surface reflectivity, making nighttime travelers or those traveling in bad nighttime weather see further and see objects more clearly, thus improving outdoor safety.

[0073] Table 2 shows the parameters of Scheme 2 provided in the embodiments of this application.

[0074]

[0075] In another implementation, referring to Table 3, optionally, the first characteristic wavelength λ1 is located in the 485nm~505nm band, and the optical power corresponding to the first characteristic wavelength λ1 accounts for ≥10% of the total optical power, which is beneficial to improve alertness and enhance dark vision light efficiency. The second characteristic wavelength λ2 is located in the 565nm~590nm band, and the optical power corresponding to the second characteristic wavelength λ2 accounts for ≥20% of the total optical power, which is beneficial to improve photopic vision light efficiency, increase road surface reflectivity, and improve penetration through rain, fog, and haze.

[0076] Table 3 shows the parameters of Scheme 3 provided in the embodiments of this application.

[0077]

[0078] In another implementation, referring to Table 4, optionally, the first characteristic wavelength λ1 is located in the 470nm~520nm band, and the corresponding optical power accounts for ≥10% of the total optical power, thereby improving alertness and dark vision efficiency; the second characteristic wavelength λ2 is located in the 540nm~600nm band, and the corresponding optical power accounts for ≥30% of the total optical power, thereby improving photopic vision efficiency, road surface reflectivity, and rain, fog, and haze penetration; the third characteristic wavelength λ3 is located in the 600nm~660nm band, and the corresponding optical power accounts for ≥30% of the total optical power, further improving rain, fog, and haze penetration and road surface reflectivity.

[0079] Table 4 shows the parameters of Scheme 4 provided in the embodiments of this application.

[0080]

[0081] In another possible implementation, in addition to including multiple wavelengths in the 420nm~740nm band with continuity, the emitted light from the lighting source may optionally also include light in the 400nm~420nm band and / or light in the 740nm~1.7μm band. That is, the lighting source is configured to include the full spectrum from violet to infrared, resulting in very high color rendering indices R1~R15. This ensures high visibility of objects at night, improving the ability of nighttime travelers to identify objects and significantly enhancing nighttime travel safety. Ra is the color rendering index. To quantitatively evaluate the color rendering of a light source, a standard light source is used as the benchmark, with its color rendering index set at 100. The color rendering indices of other light sources are all below 100. R1 is pale grayish-red, R2 is dark grayish-yellow, R3 is saturated yellowish-green, R4 is medium yellowish-green, R5 is pale blue-green, R6 is pale blue, R7 is pale purplish-blue, R8 is pale reddish-purple, R9 is saturated red, R10 is saturated yellow, R11 is saturated green, R12 is saturated blue, R13 is Caucasian skin color, R14 is leaf green, and R15 is Asian skin color.

[0082] For example, Table 5 shows the parameters of two specific lighting sources provided in the embodiments of this application, and Figures 6 and 7 are spectral diagrams corresponding to Table 5, where the horizontal axis represents wavelength and the vertical axis represents intensity. Each embodiment has good outdoor lighting effect, emitting white light with a first characteristic wavelength of 500nm and a light power accounting for more than 10% of the total light power, which can effectively improve dark vision light effect, while making night travelers more alert and improving their recognition ability, thereby greatly improving the safety of night travel; it also has two second characteristic wavelengths of 555nm and 590nm, with a light power accounting for more than 10% of the total light power, which can effectively improve light effect in daylight, improve the penetration of rain, fog, and haze and the road surface reflectivity, so that night travelers or those traveling in bad night weather can see further and see objects more clearly, thus improving outdoor safety. In the first embodiment of Table 5, the color temperature CCT=4878K, the color rendering index Ra=90, the dark visual luminous efficacy=275.8lm / W, and the color coordinates (x, y) are (0.3511, 0.3773); in the second embodiment of Table 5, the color temperature CCT=4862K, the color rendering index Ra=90, the dark visual luminous efficacy=276.5lm / W, and the color coordinates (x, y) are (0.3517, 0.3779).

[0083] Table 5. Parameters of four specific embodiments provided in this application.

[0084]

[0085] Table 6 shows the parameters of a specific lighting source provided in the embodiments of this application, and Figure 8 is a spectral diagram corresponding to Table 6. The lighting source emits golden light with a first characteristic wavelength of 490nm and a light power accounting for more than 10% of the total light power. This can effectively improve dark vision light efficiency, making nighttime travelers more alert and improving their recognition ability, thereby significantly improving nighttime travel safety. It also has two second characteristic wavelengths of 550nm and 590nm, with light power accounting for more than 10% of the total light power in each case. This can effectively improve light efficiency in daylight, increase penetration through rain, fog, and haze, and improve road surface reflectivity, allowing nighttime travelers or those traveling in inclement weather to see further and more clearly, thus improving outdoor safety. Furthermore, it has a third characteristic wavelength of 620nm, with the corresponding light power accounting for more than 50% of the total light power. This provides better penetration through rain, fog, and haze, and better road surface reflectivity, allowing nighttime travelers or those traveling in inclement weather to see further and more clearly, thus improving outdoor safety. The lighting source provided in this embodiment has a color temperature CCT=2842K, a color rendering index Ra=94, a dark visual luminous efficacy=263lm / W, and color coordinates (x, y) of (0.4591, 0.4278).

[0086] Table 6. Parameters of another specific embodiment provided in this application.

[0087]

[0088] Figure 9 is a schematic diagram of the structure of a light-emitting diode chip provided in an embodiment of this application. Referring to Figure 9, optionally, the light-emitting diode chip 100 includes an N-type semiconductor layer 101, a P-type semiconductor layer 104, and a first light-emitting layer 103 and a second light-emitting layer 102 disposed between the N-type semiconductor layer 101 and the P-type semiconductor layer 104. The first light-emitting layer 103 is located on the side of the second light-emitting layer 102 close to the P-type semiconductor layer 104. The first light-emitting layer 103 generates light of at least one wavelength in an electroluminescent manner and includes at least one first light-emitting layer. The light generated by the first light-emitting layer 103 excites the second light-emitting layer 102 to generate light of at least one wavelength. The second light-emitting layer 102 also includes at least one second light-emitting layer.

[0089] The light-emitting diode chip 100 exhibits both electroluminescence (EL) and photoluminescence (PL) forms, resulting in good stability of the spectral energy distribution of the lighting source as the current changes. The second light-emitting layer 102, used in photoluminescence, is located between the N-type semiconductor layer 101 and the P-type semiconductor layer 104. The second light-emitting layer 102 can release stress in advance, thereby improving the external quantum efficiency (EQE) of the first light-emitting layer 103. Simultaneously, the second light-emitting layer 102 itself has high crystal quality and can undergo multiple reflections and absorptions of light between the N-type semiconductor layer 101 and the P-type semiconductor layer 104, further enhancing its EQE. This results in wavelengths generated by both the first and second light-emitting layers 103 exhibiting higher EQE compared to traditional LEDs.

[0090] The lighting source may include one or more light-emitting diode (LED) chips 100, which are multi-wavelength chips, i.e., have at least two wavelengths. The shape of the LED chip 100 may be rectangular, square, circular, elliptical, triangular, rhomboid, parallelogram, or other polygonal shapes. Each LED chip 100 includes an N-type semiconductor layer 101, a P-type semiconductor layer 104, a first light-emitting layer 103, and a second light-emitting layer 102. The first light-emitting layer 103 and the second light-emitting layer 102 are stacked, with the first light-emitting layer 103 located on the side of the second light-emitting layer 102 closer to the P-type semiconductor layer 104; that is, the first light-emitting layer 103 is closer to the P-type semiconductor layer 104, and the second light-emitting layer 102 is closer to the N-type semiconductor layer 101. Holes output from the P-type semiconductor layer 104 and electrons output from the N-type semiconductor layer 101 recombine within the first light-emitting layer 103, causing the first light-emitting layer 103 to generate light of at least one wavelength in an EL (electron emitting) manner. A hole isolation region exists between the first light-emitting layer 103 and the second light-emitting layer 102, preventing holes output from the P-type semiconductor layer 104 from reaching the second light-emitting layer 102, thus preventing the second light-emitting layer 102 from emitting light. For example, the total thickness of the electroluminescent layer is greater than or equal to the hole diffusion length, forming the hole isolation region; or a hole isolation layer exists between the electroluminescent layer and the photoluminescent layer, with the total thickness of the hole isolation layer and the electroluminescent layer greater than or equal to the hole diffusion length. Light of a first wavelength generated by the first light-emitting layer 103 is transmitted to the second light-emitting layer 102, exciting the second light-emitting layer 102, causing the second light-emitting layer 102 to generate light of at least one wavelength in a photoluminescent (PL) manner.

[0091] It is understandable that when the first light-emitting layer 103 generates light of one wavelength, it only exhibits electroluminescence as its light-emitting mechanism. When the first light-emitting layer 103 generates light of at least two wavelengths, the smallest wavelength will excite photoluminescence of the material with a larger wavelength, thus enabling the first light-emitting layer 103 to exhibit both electroluminescence and photoluminescence mechanisms. Holes within the P-type semiconductor layer 104 are difficult to transport to the second light-emitting layer 102, therefore the second light-emitting layer 102 only exhibits photoluminescence as its light-emitting mechanism.

[0092] Thus, the light-emitting diode chip 100 exhibits both electroluminescence and photoluminescence, resulting in good stability of the spectral energy distribution of the lighting source as current changes. The photoluminescent second light-emitting layer 102 is located between the N-type semiconductor layer 101 and the P-type semiconductor layer 104. The second light-emitting layer 102 can release stress in advance, thereby improving the external quantum efficiency of the first light-emitting layer 103. Simultaneously, the second light-emitting layer 102 itself has good crystal quality and can undergo multiple reflections and absorptions between the N-type semiconductor layer 101 and the P-type semiconductor layer 104, further improving its external quantum efficiency. Therefore, the wavelengths generated by both the first and second light-emitting layers 103 exhibit higher external quantum efficiencies compared to traditional LEDs.

[0093] Each wavelength band can contain multiple wavelengths, with the total number of wavelengths being greater than or equal to 1 and less than or equal to 10. The number of wavelengths in different wavelength bands can be equal or unequal. The wavelength bands generated by the first light-emitting layer 103 and the second light-emitting layer 102 can be the same or different. For example, a wavelength can be set every 15nm between 450nm and 490nm. Multiple wavelengths are obtained through a single light-emitting diode chip, and the characteristic wavelengths and half-peak widths of multiple different wavelengths can be precisely tuned, as can the intensity ratios of different wavelengths.

[0094] This allows for the selection of the number of wavelengths, specific wavelengths, characteristic wavelengths and full width at half maximum (FWHM) of different wavelengths, and the intensity ratio of different wavelengths of the LED chip 100 as needed, enabling various lighting methods. This allows the spectral design of lighting sources to break through the limitations of traditional LED chips, fully considering characteristics such as high luminous efficacy in both bright and dark conditions, high road surface reflectivity, high penetration in rain, fog, and haze, and high alertness, comprehensively considering outdoor lighting safety and ensuring safety during nighttime travel. Furthermore, using this multi-wavelength LED chip combining electroluminescence and photoluminescence simplifies the driving method, packaging process, and control method, facilitating cost control and easily obtaining a full-spectrum lighting spectrum. In addition, the size of the multi-wavelength chip and LED chip group can be flexibly adjusted, reducing costs and improving reliability and lifespan.

[0095] Optionally, the light emitted by the first light-emitting layer 103 corresponds to at least one of the following wavelengths: violet, blue, cyan, and green; the light emitted by the second light-emitting layer 102 corresponds to at least one of the following wavelengths: violet, blue, cyan, green, yellow, red, and infrared; and at least one wavelength of the light emitted by the first light-emitting layer 103 is less than all wavelengths of the light emitted by the second light-emitting layer 102.

[0096] In some possible implementations, the light emitted by the first light-emitting layer 103 corresponds to the violet and / or blue wavelength bands, meaning that the electroluminescent first light-emitting layer 103 emits violet light and / or blue light. The light emitted by the first light-emitting layer 103 can also correspond to the cyan or green wavelength bands, meaning that in addition to emitting violet and / or blue light, the electroluminescent first light-emitting layer 103 can also emit cyan and / or green light.

[0097] The wavelength ranges are as follows: violet (400nm~420nm), blue (420nm~480nm), cyan (480nm~510nm), green (510nm~565nm), yellow (565nm~590nm), red (590nm~740nm), and infrared (740nm~1.7μm).

[0098] It is understandable that light in the violet band is violet light, and its color is violet; light in the blue band is blue light, and its color is blue; light in the cyan band is cyan light, and its color is cyan; light in the green band is green light, and its color is green; light in the yellow band is yellow light, and its color is yellow; light in the red band is red light, and its color is red; and light in the infrared band is infrared radiation, and its color is colorless.

[0099] Thus, the LED chip 100 can contain a total of n colors, where 1 ≤ n ≤ 7. Of these, electroluminescence contains 'a' colors, and photoluminescence contains 'b' colors, where 1 ≤ a ≤ 4 and 2 ≤ b ≤ 7. Here, colors correspond to wavelengths; for example, blue corresponds to the blue wavelength band, which ranges from 420 nm to 480 nm. For ease of description and representation, in the following examples, the violet band is represented by A, the blue band by B, the cyan band by C, the green band by G, the yellow band by Y, the red band by R, and the infrared band by IR.

[0100] In some possible implementations, Figure 10 is a schematic diagram of the structure of a lighting source provided in an embodiment of this application. As shown in Figure 10, the lighting source includes a light-emitting diode chip, and the light generated by the light-emitting diode chip after packaging forms the emitted light of the lighting source.

[0101] It is understandable that when a lighting source includes a light-emitting diode (LED) chip, the LED chip can be a single-core multi-wavelength chip. The light emitted by the first light-emitting layer 103 and the second light-emitting layer 102 of the LED chip 100 corresponds to at least the blue band B, cyan band C, green band G, yellow band Y, and red band R. The wavelength range of the light emitted by the first light-emitting layer 103 is relatively small, which facilitates the excitation of the second light-emitting layer 102. For example, the light emitted by a lighting source formed by a single-core multi-wavelength chip can correspond to the wavelength range of Bx+Cy+Gz+Ym+Rn, or it can be in the form of Ax+By+Cz+Gm+Yn+Rk, Bx+Cy+Gz+Ym+Rn+IRk, Ax+By+Cz+Gm+Yn+Rk+IRt, etc. Here, x, y, z, m, n, k, and t are the number of wavelengths within the corresponding wavelength range, and their values ​​are greater than or equal to 1.

[0102] In some possible implementations, the lighting source may optionally include at least two light-emitting diode (LED) chips, and the light generated by the at least two LED chips is mixed to form the emitted light of the lighting source.

[0103] The light-emitting diode (LED) chip can be a single-core multi-wavelength chip. For example, Figure 11 is a schematic diagram of a lighting source provided in an embodiment of this application. Referring to Figure 11, the lighting source may include two LED chips. The light emitted by the first LED chip 100a corresponds to the wavelength band Bx+Gy+Yz, and the light emitted by the second LED chip 100b corresponds to the wavelength band Cx+Ry. Figure 12 is a schematic diagram of another lighting source provided in an embodiment of this application. Referring to Figure 12, the lighting source may further include three LED chips. The light emitted by the first LED chip 100a corresponds to the wavelength band Ax+By+Cz, the light emitted by the second LED chip 100b corresponds to the wavelength band Cx+Gy, and the light emitted by the third LED chip 100c corresponds to the wavelength band Yx+Ry. Figure 13 is a schematic diagram of another lighting source provided in an embodiment of this application. Referring to Figure 13, the light emitted by the first LED chip 100a corresponds to the wavelength band Ax+By+Cz, the light emitted by the second LED chip 100b corresponds to the wavelength band Bx+Gy+Yz, and the light emitted by the third LED chip 100c corresponds to the wavelength band Bx+Ry+IRz, etc. In other embodiments, the number of LED chips and the wavelength band of the emitted light can be flexibly designed according to actual needs, and this application embodiment does not limit this.

[0104] In some possible implementations, the lighting source may optionally include at least one single-wavelength chip that generates light of a single wavelength. The single-wavelength chip can be of the form of A, C, IR, R, G, B, Y, etc. Optionally, the light generated by at least one light-emitting diode chip is mixed with the light generated by at least one single-wavelength chip to form the emitted light from the lighting source.

[0105] For example, the lighting source may include a combination of one or more single-wavelength chips and one or more multi-wavelength chips. For example, Figures 14 to 16 are schematic diagrams of the structure of another lighting source provided in the embodiments of this application. Referring to Figure 14, the lighting source includes one single-wavelength chip 100s and two multi-wavelength chips 100m. The light generated by the single-wavelength chip 100s corresponds to the wavelength R. The light generated by the first multi-wavelength chip 100m1 corresponds to the wavelength Ax+By+Cz. The light generated by the second multi-wavelength chip 100m2 corresponds to the wavelength Cx+Gy+Yz. Or referring to Figure 15, the lighting source includes one single-wavelength chip 100s and two multi-wavelength chips 100m. The light generated by the single-wavelength chip 100s corresponds to the wavelength R. The light generated by the first multi-wavelength chip 100m1 corresponds to the wavelength Ax+By+Cz. The light generated by the second multi-wavelength chip 100m2 corresponds to the wavelength Bx+Gy+Yz. Referring to Figure 16, the lighting source may further include two single-wavelength chips 100s1 and one multi-wavelength chip 100m. The light generated by the first single-wavelength chip 100s1 corresponds to the Y band, the light generated by the second single-wavelength chip 100s2 corresponds to the R band, and the light generated by the multi-wavelength chip 100m can correspond to the Bx+Cy+Gz band. In other embodiments, the number of single-wavelength chips and multi-wavelength chips, as well as the bands of the generated light, can be flexibly designed according to actual needs. This application does not limit this aspect.

[0106] Figure 17 is a schematic diagram of another lighting source provided in the embodiment of this application. Referring to Figure 18, optionally, the light-emitting diode chip 100 further includes a color conversion layer 105, which is disposed on the light-emitting side of the light-emitting diode chip 100.

[0107] The color conversion layer 105 can convert the light emitted by the LED chip 100 into different colors, such as red, yellow, or green. The color conversion layer 105 includes at least one color conversion material, and different color conversion materials produce light with different wavelengths. The color conversion material can be added to the encapsulating adhesive and placed on the light-emitting surface of the LED chip 100 during encapsulation, or it can be formed into a film and attached to the light-emitting surface of the LED chip 100.

[0108] Optionally, the color conversion layer includes at least one color conversion material, and different color conversion materials convert light to different wavelengths. The color conversion material forming the color conversion layer 105 can be a quantum dot material or a fluorescent material, and the wavelengths of the light converted by the color conversion material include the blue band, green band, cyan band, yellow band, red band, or infrared band. For example, color conversion materials include potassium fluorosilicate (KSF) phosphor (i.e., red phosphor), aluminate red phosphor, aluminate green phosphor, europium-doped blue phosphor, yellow phosphor, etc.

[0109] In some possible implementations, optionally, the light generated by at least one light-emitting diode chip is mixed with the light generated by the color conversion layer to form the emitted light of the lighting source.

[0110] The principles for adding color conversion materials are as follows: supplementing missing colors, or adding color conversion materials to an LED chip containing that color to increase its spectral continuity and brightness. Furthermore, the addition of color conversion materials can involve one type of material for the same color, or multiple materials with different wavelengths. For example, adding G color conversion materials can involve adding one type of G color conversion material, or multiple types of G color conversion materials with different wavelengths. When an LED chip contains a wavelength of G or another color, the added G or other color conversion material can be the same wavelength as the LED chip to increase brightness, or it can be a different wavelength to increase spectral continuity and brightness.

[0111] In practical implementation, the LED chip and color conversion material can be combined according to actual needs. A single multi-wavelength chip + a single color conversion material can be selected. For example, the multi-wavelength chip corresponds to the band Ax+By+Cz, and the color conversion material can be Y+G+R or G+Y+R+IR. Alternatively, multiple multi-wavelength chips + one or more color conversion materials can be selected. For example, two multi-wavelength chips correspond to the bands Ax+By+Cz+Gm and Ax+By+Cz+Gm+Yn, respectively, and the color conversion material can be Y+R or Y+R+IR, or G+Y+R, or G+Y+R+IR, or G+Y+R, or G+Y+R+IR. Another option is to select one or more multi-wavelength chips + one or more single-core single-wavelength chips + one or more color conversion materials. The specific choice depends on the actual situation. The lighting source provided in this application has the following advantages: simple driving circuit and simple control method; simple phosphor preparation and simple packaging; continuous lighting source spectrum with higher R1-R15 color rendering index; low cost: the cost of a single-core multi-wavelength chip is lower than the total cost of multiple chips, and lower than the total cost of a traditional single-core single-wavelength chip + multiple powders.

[0112] Color conversion material is disposed on the light-emitting side of the chip, and can completely cover all chips or cover part of the chips. For example, Figures 18-22 are schematic diagrams of another lighting source provided in an embodiment of this application. Referring to Figure 18, the lighting source includes a first multi-wavelength chip 100m1 and a second multi-wavelength chip 100m2, as well as a color conversion layer 105a disposed on the light-emitting side of the first multi-wavelength chip 100m1 and a color conversion layer 105b disposed on the light-emitting side of the second multi-wavelength chip 100m2; referring to Figure 19, the lighting source includes a multi-wavelength chip 100m and a single-wavelength chip 100s, as well as a color conversion layer 105b disposed on the light-emitting side of the multi-wavelength chip 100m; referring to Figure 20, the lighting source includes a multi-wavelength chip 100m1... The illumination source includes a multi-wavelength chip 100m1 and a single-wavelength chip 100s, as well as a color conversion layer 105 disposed on the light-emitting side of the single-wavelength chip 100s; referring to FIG21, the illumination source includes a first multi-wavelength chip 100m1 and a second multi-wavelength chip 100m2, as well as the same type of color conversion layer 105 disposed on the light-emitting side of the first multi-wavelength chip 100m1 and the light-emitting side of the second multi-wavelength chip 100m2. It is understood that in other embodiments, the number of multi-wavelength chips and single-wavelength chips may be greater than one, and the specific implementation can be designed according to the actual situation.

[0113] In some possible implementations, the lighting source may optionally include at least one single-wavelength chip and a color conversion layer. The single-wavelength chip generates light of a single wavelength, and the color conversion layer is disposed on the light-emitting side of the light-emitting diode chip and / or the single-wavelength chip. The single-wavelength chip generates light of a single wavelength, and the color conversion layer can convert and generate light of at least one wavelength. The color conversion layer may be disposed on the light-emitting side of the single-wavelength chip, or on the light-emitting side of the light-emitting diode chip, or both. The single-wavelength chip and color conversion layer can be referenced to the embodiments described above, and will not be detailed here.

[0114] Optionally, the light generated by at least one light-emitting diode chip, together with the light generated by at least one single-wavelength chip and the light generated by the color conversion layer, are mixed to form the emitted light of the lighting source.

[0115] In summary, the lighting source provided in this application includes at least one light-emitting diode (LED) chip, which emits light in at least two wavelength bands. The emitted light from the lighting source includes multiple wavelengths in the 420nm~740nm band and has spectral continuity, with adjacent wavelengths spaced 5nm~60nm apart, and each wavelength having a half-width at half-maximum (FWHM) range of 10nm~60nm. Furthermore, it includes prominent characteristic wavelengths, the light power of which accounts for more than or equal to 10% of the total light power. The characteristic wavelengths include at least a first characteristic wavelength and a second characteristic wavelength. The first characteristic wavelength includes at least one wavelength in the 470nm~520nm band, and the second characteristic wavelength includes at least one wavelength in the 540nm~600nm band. The illumination source is obtained by setting a light-emitting diode chip that can emit at least two wavelengths. This illumination source has full-spectrum continuity and a very high color rendering index (CRI) of R1 to R15, resulting in very high color rendering of objects at night. The illumination source has several prominent characteristic wavelengths. The first characteristic wavelength can effectively improve dark vision, making night travelers more alert and improving their recognition ability, thus significantly improving nighttime travel safety. The second characteristic wavelength can effectively improve light vision, increasing the penetration of rain, fog, and haze, as well as road surface reflectivity, allowing night travelers or those traveling in inclement weather to see further and more clearly, improving outdoor safety. It may also include a third characteristic wavelength, which can further improve the penetration of rain, fog, and haze, allowing night travelers or those traveling in inclement weather to see further and more clearly, improving outdoor safety.

[0116] This application also provides a lighting device, including any of the lighting sources provided in the above embodiments.

[0117] The lighting device improved in this application includes any of the lighting sources provided in the above embodiments, and has the same or corresponding technical effects as the lighting source, which will not be described in detail here.

[0118] Optionally, as shown in Figure 23, the lighting device also includes an insect-repelling light source that emits light in the 560nm~600nm wavelength range. In specific implementations, different wavelengths can be selected according to different insects, such as 570±5nm or 585±5nm. The lighting source can be encapsulated to form an illumination LED, and the insect-repelling light source can be encapsulated to form a mosquito-repelling LED.

[0119] The lighting LEDs and insect-repellent LEDs can be configured as either discrete or integrated units. This means the lighting source and insect-repellent source are electrically connected to the same lighting fixture or to different fixtures. For discrete configurations, the insect-repellent yellow LEDs and outdoor lighting LEDs are placed in separate lighting fixtures, combined into a single unit. For integrated configurations, the insect-repellent yellow LEDs and outdoor lighting LEDs are placed in different light-emitting panels within the same lighting fixture; the placement of these panels is unrestricted. For example, the lighting LEDs can be placed on the lower light-emitting panel of a streetlight, while the insect-repellent LEDs are placed on the upper light-emitting panel. Alternatively, the lighting LEDs can be on the lower light-emitting panel of a streetlight, while the insect-repellent LEDs are on the lamp body. In both configurations, the lighting LEDs and insect-repellent LEDs can be used simultaneously or individually as needed. For example, only the insect-repellent LEDs can be activated to repel mosquitoes. By adding a mosquito-repellent function, insects can be prevented from disturbing those out at night and from entering the lighting fixture, facilitating cleaning and maintenance.

[0120] The specific embodiments described above do not constitute a limitation on the scope of protection of this application. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

An illumination source includes at least one light-emitting diode chip (100) that emits light in at least two wavelengths; The emitted light from the illumination source contains at least multiple wavelengths in the 420nm~740nm band and has spectral continuity, with an interval of 5nm~60nm between two adjacent wavelengths, and a half-width of 10nm~60nm for each wavelength. The emitted light from the illumination source also includes a characteristic wavelength, which is a wavelength in which the light power accounts for more than or equal to 10% of the total light power; the characteristic wavelength includes at least a first characteristic wavelength and a second characteristic wavelength, the first characteristic wavelength includes at least one wavelength in the 470nm~520nm band, and the second characteristic wavelength includes at least one wavelength in the 540nm~600nm band. According to the lighting source of claim 1, wherein, The optical power corresponding to the first characteristic wavelength accounts for ≥10% of the total optical power, and the optical power corresponding to the second characteristic wavelength accounts for ≥20% of the total optical power. According to the lighting source of claim 1, wherein, The characteristic wavelength also includes a third characteristic wavelength, which includes at least one wavelength in the 600nm~660nm band. According to the lighting source of claim 3, wherein, The optical power corresponding to the third characteristic wavelength accounts for ≥20% of the total optical power. The lighting source according to claim 1 or 4, wherein, The first characteristic wavelength includes a first sub-characteristic wavelength and a second sub-characteristic wavelength, wherein the first sub-characteristic wavelength is located in the 485nm~495nm band and the second sub-characteristic wavelength is located in the 500nm~510nm band. The second characteristic wavelength includes a third sub-characteristic wavelength and a fourth sub-characteristic wavelength, wherein the third sub-characteristic wavelength is located in the 540nm~570nm band and the fourth sub-characteristic wavelength is located in the 570nm~600nm band; The optical power corresponding to the first sub-characteristic wavelength, the second sub-characteristic wavelength, the third sub-characteristic wavelength, and the fourth sub-characteristic wavelength all account for ≥10% of the total optical power. According to claim 2, the lighting source, wherein, The first characteristic wavelength is located in the 485nm~505nm band, and the second characteristic wavelength is located in the 565nm~590nm band. According to the lighting source of claim 3, wherein, The optical power corresponding to the first characteristic wavelength accounts for ≥10% of the total optical power, the optical power corresponding to the second characteristic wavelength accounts for ≥30% of the total optical power, and the optical power corresponding to the third characteristic wavelength accounts for ≥30% of the total optical power. According to the lighting source of claim 1, wherein, The emitted light from the lighting source further includes at least one of light in the 400nm~420nm wavelength band or light in the 740nm~1.7μm wavelength band. According to the lighting source of claim 1, wherein, The light-emitting diode chip (100) includes an N-type semiconductor layer (101), a P-type semiconductor layer (104), and a first light-emitting layer (103) and a second light-emitting layer (102) disposed between the N-type semiconductor layer (101) and the P-type semiconductor layer (104). The first light-emitting layer (103) is located on the side of the second light-emitting layer (102) closer to the P-type semiconductor layer (104). The first light-emitting layer (103) generates light of at least one wavelength in an electroluminescent manner, and the light generated by the first light-emitting layer (103) excites the second light-emitting layer (102) to generate light of at least one wavelength. The lighting source according to claim 9, wherein, The light emitted by the first light-emitting layer (103) corresponds to at least one of the following wavelengths: violet, blue, cyan, and green. The light emitted by the second light-emitting layer (102) corresponds to at least one of the following wavelengths: the violet band, the blue band, the cyan band, the green band, the yellow band, the red band, and the infrared band. At least one wavelength of the light emitted by the first light-emitting layer (103) is less than all wavelengths of the light emitted by the second light-emitting layer (102). The lighting source according to claim 9, wherein, The lighting source includes a light-emitting diode chip (100), and the light emitted by the light-emitting diode chip (100) after being packaged forms the emitted light of the lighting source. The lighting source according to claim 9, wherein, The lighting source includes at least two light-emitting diode chips (100), and the light generated by the at least two light-emitting diode chips (100) after being packaged is mixed to form the emitted light of the lighting source. The lighting source according to claim 1 further includes at least one single-wavelength chip (100s) that generates light of a single wavelength. The lighting source according to claim 13, wherein, The light emitted by at least one of the light-emitting diode chips (100) and at least one of the single-wavelength chips (100s) after being packaged together is mixed to form the emitted light of the lighting source. The lighting source according to claim 1 further includes a color conversion layer (105), the color conversion layer (105) being disposed on the light-emitting side of at least a portion of the light-emitting diode chip (100). The lighting source according to claim 15, wherein, The light emitted by at least one of the light-emitting diode chips (100) after being packaged with the color conversion layer (105) is mixed to form the emitted light of the lighting source. The lighting source according to claim 15, wherein, The color conversion layer (105) includes at least one color conversion material, and the wavelengths of the light converted by different color conversion materials are different. The lighting source according to claim 17, wherein, The color conversion material includes quantum dot materials or fluorescent materials, and the light converted by the color conversion material is located in the blue band, green band, cyan band, yellow band, red band or infrared band. The lighting source according to claim 1 further includes at least one single-wavelength chip (100s) and a color conversion layer (105), wherein the single-wavelength chip (100s) generates light of a single wavelength, and the color conversion layer (105) is disposed on the light-emitting side of at least one of the light-emitting diode chip (100) or the single-wavelength chip (100s). The lighting source according to claim 19, wherein, The light emitted from at least one of the light-emitting diode chips (100) and at least one of the single-wavelength chips (100s) and the color conversion layer (105) after being packaged together is mixed to form the emitted light of the lighting source. A lighting device comprising the lighting source as described in any one of claims 1 to 20. The lighting device according to claim 21 further includes an insect-repelling light source, wherein the insect-repelling light source emits light in the 560nm~600nm wavelength band. The lighting device according to claim 22, wherein, The insect-repellent light source and the illumination light source are configured to be electrically connected to the same illumination body or electrically connected to different illumination bodies.