Substrate processing method, light emitting diode manufacturing method, and substrate, light emitting diode

Abstract

The application discloses a substrate processing method, a light emitting diode manufacturing method, a substrate and a light emitting diode. The substrate processing method comprises the following steps: providing a crystal bar to be cut; cutting the crystal bar to obtain a substrate; the substrate surface type of the substrate comprises an easy-to-repair position; and the warping position of the substrate corresponds to the easy-to-repair position of the substrate; fixing the substrate to a polishing head; and polishing the substrate. According to the anisotropy of the crystal, the easy-to-repair surface type is obtained, and the warping position of the substrate is controlled to correspond to the easy-to-repair position of the substrate surface type during the cutting process. In the subsequent polishing process, the warping position can be repaired. Since the warping position is located at the easy-to-repair position of the substrate surface type, the repair grinding amount of the substrate surface type can be reduced, and the surface type repair capability is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device technology, specifically to a substrate processing method, a light-emitting diode manufacturing method, and a substrate and a light-emitting diode. Background Technology

[0002] In sapphire substrate wafer processing, the larger the wafer size, the greater the wafer warpage after slicing. To reduce wafer warpage, traditional processes typically employ double-sided grinding and single-sided hard polishing during subsequent processing to repair the wafer surface from both sides, thereby reducing warpage and maintaining surface flatness. However, traditional processing methods also have some drawbacks. The grinding or polishing process is time-consuming, involves a large amount of grinding, and has poor wafer repair capabilities, which is detrimental to improving production efficiency and reducing costs. Summary of the Invention

[0003] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a substrate processing method, a light-emitting diode manufacturing method, and a substrate and a light-emitting diode, so as to reduce the amount of grinding required for substrate surface repair and improve the surface repair capability.

[0004] To achieve the above and other related objectives, the present invention provides a substrate processing method, comprising:

[0005] Provide a crystal rod to be cut;

[0006] The crystal rod is cut to obtain a substrate, the substrate surface includes easily repairable positions, and the warpage position of the substrate corresponds to the easily repairable position of the substrate.

[0007] The substrate is fixed to the polishing head and polished.

[0008] According to one aspect of the present invention, the present invention also provides a substrate formed using the above-described substrate processing method.

[0009] According to one aspect of the present invention, the present invention also provides a light-emitting diode, the light-emitting diode comprising:

[0010] The substrate is formed using the substrate processing method described above;

[0011] A light-emitting structure is formed on the surface of a substrate, wherein the light-emitting structure comprises, in sequence, a first semiconductor layer, an active layer, and a second semiconductor layer of the opposite type to the first semiconductor layer.

[0012] According to one aspect of the present invention, the present invention also provides a method for manufacturing a light-emitting diode, the method comprising:

[0013] A substrate is provided, which is formed using the substrate processing method described above;

[0014] A light-emitting structure is formed on the surface of a substrate. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer of the opposite type to the first semiconductor layer, which are sequentially formed on the surface of the substrate.

[0015] Compared with the prior art, the substrate processing method, the light-emitting diode manufacturing method, the substrate, and the light-emitting diode described in this invention have at least the following beneficial effects:

[0016] The substrate processing method of the present invention obtains an easily repairable surface shape based on the anisotropy of the crystal, and controls the warpage position of the substrate to correspond to the easily repairable position in the substrate surface shape during the cutting process. In the subsequent polishing process, the warpage position can be repaired. Since the warpage position is in an easily repairable position of the substrate surface shape, the amount of grinding required to repair the substrate surface shape can be reduced, thereby improving the surface shape repair capability.

[0017] The light-emitting diode manufacturing method, substrate, and substrate in the light-emitting diode described in this invention are all made using the above-mentioned substrate processing method, and thus possess the same technical effects. Attached Figure Description

[0018] Figure 1 This is a flowchart of the substrate processing method described in Embodiment 1 of the present invention;

[0019] Figure 2a This is a photograph of the line-cut substrate in Embodiment 1 of the present invention;

[0020] Figure 2b This is a schematic diagram showing the correspondence between a line-cut substrate photograph and the substrate surface shape in Embodiment 1 of the present invention;

[0021] Figure 3a This is a schematic diagram of the crystal orientation of a sapphire crystal cross section;

[0022] Figure 3b A schematic diagram of the crystal orientation of a sapphire crystal in three dimensions;

[0023] Figure 4 This is a schematic diagram of cutting a crystal rod in Embodiment 1 of the present invention;

[0024] Figure 5 This is a graph showing the amount of wire used for different cutting segments in Embodiment 1 of the present invention;

[0025] Figure 6 This is a diagram showing the relative motion between the actively driven polishing disc and the polishing head in Embodiment 1 of the present invention.

[0026] List of reference numerals in the attached diagram:

[0027] 100 pressure head

[0028] 200 crystal rods

[0029] 201 Crystal Rod Cross Section

[0030] 300 Warpage Location

[0031] 400 cutting line

[0032] 500 polishing head

[0033] 600 polishing disc Detailed Implementation

[0034] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application. It should be noted that, unless otherwise specified, the following embodiments and features in the embodiments can be combined with each other.

[0035] It should be understood that the illustrations provided in the embodiments of this invention are merely schematic representations of the basic concept of the invention. Although the illustrations only show components relevant to the invention and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component can be arbitrarily changed in actual implementation, and the component layout may also be more complex. The structures, proportions, sizes, etc., shown in the accompanying drawings are only used to complement the content disclosed in the specification for those skilled in the art to understand and read, and are not intended to limit the conditions under which this application can be implemented. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationships, or adjustments to the size, without affecting the effects and objectives that the invention can produce, should still fall within the scope of the technical content disclosed in this application.

[0036] This embodiment provides a substrate processing method, including:

[0037] Provide a crystal rod to be cut;

[0038] The crystal rod is cut to obtain a substrate, the substrate surface includes easily repairable positions, and the warpage position of the substrate corresponds to the easily repairable position of the substrate.

[0039] The substrate is fixed to the polishing head and polished.

[0040] Optionally, prior to the step of dicing the crystal ingot to obtain the substrate, the method further includes:

[0041] The required substrate profile is determined based on the anisotropy of the crystal, and the crystal rod is cut to obtain the substrate profile.

[0042] Optionally, the step of determining the desired substrate surface type based on the anisotropy of the crystal includes:

[0043] The substrate surface profile includes the boundary line between at least two crystal planes.

[0044] Optionally, the substrate surface profile includes a C-plane and / or an N-plane.

[0045] Optionally, the warpage of the substrate is located at the junction of at least two crystal planes in the substrate surface. Since fatigue cracks are prone to occur at the junction of crystal planes, they are easier to remove during the polishing process, which helps to accelerate the rate of warpage planarization.

[0046] Optionally, the warpage of the substrate is located at the boundary between at least two crystal planes in the substrate surface, or at the boundary between at least two crystal planes in the substrate surface and on the C-plane and / or N-plane in the substrate surface. Since the grinding rate of the C-plane and N-plane is higher than that of other crystal planes, controlling the warpage location as much as possible within the C-plane and N-plane can also improve the repair efficiency and make the warpage easier to repair.

[0047] Optionally, the step of cutting the crystal ingot to obtain the substrate further includes:

[0048] The substrate with the required surface shape is cut out using wire cutting or hidden cutting methods.

[0049] Optionally, the step of cutting the substrate with the desired surface shape using wire cutting or hidden cutting methods further includes:

[0050] Select a cutting angle that is offset from A to M by 2° to 30°.

[0051] Optionally, the crystal rod is cut using wire cutting, and after selecting the cutting angle offset from A to M by 2° to 30°, the method further includes:

[0052] The cross-section of the crystal rod to be cut is divided into 60 cutting segments from the beginning to the end of the cutting process;

[0053] When cutting to the 5th to 55th cutting segment, the amount of wire consumed can be increased or decreased by 1% to 30%.

[0054] Optionally, after the crystal ingot is cut to obtain the substrate and before the substrate is fixed to the polishing head, the method further includes:

[0055] Determine the most easily worn area on the polishing head;

[0056] Align the warped position of the substrate with the most wear-prone position of the polishing head.

[0057] Optionally, before the step of aligning and securing the warped position of the substrate to the most wear-prone location of the polishing head, the method further includes:

[0058] The substrate is polished.

[0059] Optionally, the step of determining the most wear-prone location of the substrate on the polishing head includes:

[0060] Obtain the relative motion trajectory between the polishing head and the polishing disc during the polishing process;

[0061] The tangential direction of the relative motion trajectory is determined as the most wear-prone location. Because the linear velocity is greater at the tangential direction of the relative motion trajectory, i.e., at the edge of the polishing head, this location is identified as experiencing the greatest force and is also the most prone to wear.

[0062] Optionally, the step of aligning and fixing the substrate to be repaired to the most wear-prone position of the polishing head includes:

[0063] The warped position of the substrate is fixed to the polishing head, and the warped extension direction of the warped position of the substrate is set perpendicular to the tangential direction of the relative motion trajectory.

[0064] Optionally, the step of polishing the substrate includes:

[0065] By controlling the rotation speed of the polishing disc to be less than that of the polishing head, the force direction at the warped location of the substrate is controlled to be in the negative tangential direction of the relative motion trajectory. Setting the rotation speed of the polishing disc to be less than that of the polishing head allows for greater force on the warped location of the substrate at the edge of the polishing head, thereby promoting faster removal of the warp and further improving the repair rate.

[0066] Alternatively, the crystal rod is a sapphire crystal rod.

[0067] This embodiment also provides a substrate, which is formed using the substrate processing method described above.

[0068] This embodiment also provides a light-emitting diode, including:

[0069] The substrate is formed using the substrate processing method described above;

[0070] A light-emitting structure is formed on the surface of a substrate, wherein the light-emitting structure comprises, in sequence, a first semiconductor layer, an active layer, and a second semiconductor layer of the opposite type to the first semiconductor layer.

[0071] This embodiment also provides a method for manufacturing a light-emitting diode, including:

[0072] A substrate is provided, which is formed using the substrate processing method described above;

[0073] A light-emitting structure is formed on the surface of a substrate. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer of the opposite type to the first semiconductor layer, which are sequentially formed on the surface of the substrate.

[0074] The present invention will now be described in detail with reference to specific embodiments.

[0075] Example 1

[0076] This embodiment provides a substrate processing method, referring to... Figure 1 The substrate processing method includes:

[0077] S1: Provide a crystal rod to be cut;

[0078] A crystal rod is provided, which is obtained through crystal growth. Taking a sapphire substrate as an example, the crystal growth process typically involves first placing the raw material aluminum oxide in a crucible, heating the crucible and the aluminum oxide therein to a temperature above 2000°C, causing the aluminum oxide to melt into a molten state. Then, through steps such as crystal pulling, shoulder formation, and constant diameter growth, a sapphire crystal is obtained. The resulting crystal is then subjected to rod-shaping processing to obtain a sapphire crystal rod. In this embodiment, the vertical end face of the crystal rod is the C-plane.

[0079] S2: The crystal rod is cut to obtain a substrate. The substrate surface includes easily repairable positions, and the warpage position of the substrate corresponds to the easily repairable position of the substrate.

[0080] The obtained crystal rod can be cut using wire cutting or hidden cutting processes to obtain the substrate. Specifically, the substrate can be cut into thin slices of a predetermined thickness using a high-speed reciprocating cutting wire on a cutting machine.

[0081] It should be noted that the substrate can be any substrate used for semiconductor device manufacturing, such as glass, compound semiconductors, metals and alloys, oxides, nitrides, group III-V compounds, group IV elements and compounds, halides, silicates, carbonates, etc. This embodiment uses a sapphire substrate as an example; the thickness of the diced sapphire substrate is approximately 50 μm to 20 mm, and its diameter can be 4 inches to 18 inches.

[0082] Optionally, in this embodiment, before cutting the crystal rod, the required substrate surface shape is first determined by the anisotropy of the sapphire crystal to facilitate subsequent repair of substrate warpage. For example, for the three-dimensional crystal orientation diagram and cross-sectional crystal orientation diagram of sapphire, please refer to... Figure 3a And 3b. For example... Figure 3aAs shown, a cross-section of sapphire contains multiple crystal planes and multiple crystal plane boundaries. During cutting, the warpage of the substrate is controlled at the crystal plane boundaries. Since fatigue cracks are prone to occur at crystal plane boundaries, the warpage planarization rate is accelerated. Furthermore, the grinding rate of the C-plane and N-plane is higher than that of other crystal planes. Therefore, in this embodiment, a substrate surface with a large proportion of C-planes and N-planes is selected for cutting. In this way, even if the warpage cannot be precisely controlled at the crystal plane boundaries, it can ensure that as many C-planes or N-planes as possible are warped, which is beneficial for the subsequent repair of warpage or cracks in the substrate surface. In this embodiment, a substrate surface containing multiple crystal plane boundaries is determined, and the substrate surface containing C-planes and N-planes is controlled. This substrate surface is... Figure 3a The substrate surface profile is shown. Optionally, controlling the area of ​​the C-side and N-side to account for 30% to 60%, or more than 60%, of the entire substrate surface profile can achieve better repair efficiency. Optionally, refer to... Figure 2a and Figure 2b The warpage location 300 of the substrate can be located at the crystal plane boundary line in the substrate surface, or it can be located at the crystal plane boundary line and the C-plane or N-plane, or it can be located only on the C-plane and N-plane. The above-mentioned substrates all exhibit good repair efficiency in subsequent repair processes. In this embodiment, referring to... Figure 2b The warpage position 300 of the substrate is located at the crystal plane interface and part of the C and N planes.

[0083] Following the step of determining the easily repairable substrate profile, the process further includes: cutting the crystal ingot according to the easily repairable substrate profile to obtain the substrate profile. Specifically, in order to obtain a sapphire substrate with a C-plane and / or an N-plane profile, during the cutting process, reference is made to... Figure 3a and 3b The cutting angle is selected and offset from A to M by 2° to 30° to obtain a sapphire substrate surface with C and N faces. Specifically, refer to... Figure 4 The crystal ingot 200 to be cut is placed on the cutting line 400 of the cutting machine, with the crystal ingot 200 positioned horizontally. The pressure head 100 applies pressure to the crystal ingot 200 to perform the cutting process. (Refer to...) Figure 4 The cross-section 201 of the crystal rod to be cut is divided into 60 cutting segments from the initial cutting end to the final cutting end, as shown in the reference. Figure 5 During the cutting interval from the 5th to the 55th cutting segment, the wire consumption is controlled to increase or decrease by 1% to 30% compared to the wire consumption used when cutting perpendicularly along the C-plane. This is to ensure that the substrate's crystal plane interface is located at the warped position of the substrate, or that the substrate's C-plane and / or N-plane is located at the warped position of the wafer, facilitating subsequent surface correction. It should be noted that... Figure 5 The vertical axis represents the single-cycle loop quantity.

[0084] S3: Determine the most easily worn location of the substrate on the polishing head;

[0085] First, obtain the relative motion trajectory between the polishing head and the polishing disc during the polishing process. Specifically, refer to... Figure 6 On the 600 surface of the polishing disk, the distance from any point P(x,y) to the center O of the disk is r, and the angle between point P and the x-axis is θp. At this time, the coordinates of point P are (rcosθp,rsinθp).

[0086] When the polishing head 500 is stationary and the polishing disk 600 moves in a circular motion with an angular velocity of ω, point P on the polishing head 500 moves in a circular motion around a circle with an origin of O and a radius of r. Its instantaneous coordinates are corrected to (rcos(θp-ωt), rsin(θp-ωt)). When the polishing head 500 moves in a circular motion with an angular velocity of ω1, the angle θt = ω1t that the polishing head drives the workpiece to rotate is approximately equal to the angle θp-ωt+ω1t between point P and the X-axis. The distance between points O and P that the polishing head rotates is approximately shortened by the distance ecosω1t projected onto the X-axis. Similarly, the change in the projection onto the Y-axis is esinω1t. At this time, the instantaneous coordinates of point P are corrected to (rcos(θp-ωt+ω1t)-ecosω1t, rsin(θp-ωt+ω1t)-esinω1t), which is also the relative motion trajectory of point P.

[0087] The edge of the polishing head 500 corresponds to the relative motion trajectory. Since the tangential linear velocity is greatest at this point, the workpiece experiences the greatest force. The grinding force is greatest at this location, making it the most susceptible to wear. Therefore, by fixing the warped portion of the substrate to the polishing head 500 and setting the warped extension direction of the substrate's warped position perpendicular to the tangential direction of the relative motion trajectory, maximum wear efficiency can be achieved. For example, as... Figure 2a The marked warping position is elliptical. Setting the major axis of the ellipse perpendicular to the tangential direction of the relative motion trajectory can achieve the maximum wear rate.

[0088] S4: Align the warped position of the substrate with the most wear-prone position of the polishing head, and then polish the substrate fixed to the polishing head 500.

[0089] Reference Figure 6 The warped position of the substrate is fixed to the edge of the polishing head 500. Specifically, the warped extension direction of the substrate at the warped position 300 is perpendicular to the tangential direction of the circumference of the polishing head 500. The side of the polishing head 500 with the substrate fixed therein contacts the polishing disk 600. The substrate is polished by the relative movement between the polishing disk 600 and the polishing head 500. Optionally, the substrate can be fixed to the polishing head by means of a carrier disk.

[0090] Reference Figure 6The substrate fixed to the polishing head 500 is polished. During polishing, the rotation speed of the polishing disk 600 is controlled to be less than the speed of the polishing head 500. By setting the rotation speed of the polishing disk 600 to be less than that of the polishing head 500, the warped position of the substrate on the polishing head 500 is subjected to force in the negative tangential direction of the relative motion trajectory. The warped position of the substrate at the edge of the polishing head 500 is subjected to greater force, which can promote the rapid removal of warping and further improve the repair rate and polishing efficiency. The substrate processing method described in this embodiment can achieve the maximum degree of warping repair, improve repair efficiency, reduce warping degree, and the repair range is approximately 1-33%.

[0091] Optionally, after polishing, the polished substrate can be subjected to a hidden-cutting process to compensate for and repair the substrate's warpage. Specifically, a laser emitter can be used to scan the surface of the substrate to generate a modification layer at a predetermined depth in the warped portion of the substrate. Since the modification layer generates significant stress within the substrate, altering its warpage, and by performing a hidden-cutting process based on the existing warpage, the total warpage of the substrate can be significantly reduced. Multiple modification points are formed in the polished substrate corresponding to the warped portion using a laser, and these multiple modification points form a modification layer. Before laser scanning, a laser blocking layer can be applied to the non-warped portion of the substrate to block laser penetration, exposing only the warped portion. Optionally, the non-warped portion of the substrate can be blackened to form a laser blocking layer, or a laser absorption layer can be formed on the non-warped portion to absorb laser energy and prevent damage to the non-warped portion of the substrate.

[0092] Before the step of aligning and fixing the substrate to be repaired to the most wear-prone position of the polishing head, the method further includes: grinding the substrate.

[0093] Example 2

[0094] This embodiment provides a substrate formed using the substrate processing method described in Embodiment 1 above. Similarly, this embodiment provides substrate repair capabilities, saves substrate material, and reduces substrate production costs.

[0095] Example 3

[0096] This embodiment provides a method for manufacturing a light-emitting diode (LED). The substrate processing method in the LED is the same as that in Embodiment 1, and will not be described in detail here. In addition, it includes the following steps:

[0097] A light-emitting structure is formed on the surface of a substrate. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer of the opposite type to the first semiconductor layer, sequentially formed on the substrate surface. The first semiconductor layer can be an N-type semiconductor layer, and the second semiconductor layer can be a P-type semiconductor layer; alternatively, the first semiconductor layer can be a P-type semiconductor layer, and the second semiconductor layer can be an N-type semiconductor layer. The first semiconductor layer provides electrons for recombination light emission, and the second semiconductor layer provides holes for recombination light emission. The active layer is a single quantum well or multiple quantum wells, used for electron-hole recombination light emission.

[0098] Since the method for fabricating the light-emitting diode in this embodiment adopts the substrate processing method in Example 1, the substrate processing steps are simple, which can more efficiently reduce the warpage of the substrate, improve the substrate repair efficiency and yield, and thus improve the production quality of the light-emitting structure of the light-emitting diode.

[0099] Example 4

[0100] This embodiment also provides a light-emitting diode (LED), which includes a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer with the opposite conductivity type to the first semiconductor layer, sequentially formed on the surface of the substrate. The substrate is formed using the substrate fabrication method described in Embodiment 1. The first semiconductor layer can be an N-type semiconductor layer, and the second semiconductor layer can be a P-type semiconductor layer; alternatively, the first semiconductor layer can be a P-type semiconductor layer, and the second semiconductor layer can be an N-type semiconductor layer. The first semiconductor layer provides electrons for recombination emission, and the second semiconductor layer provides holes for recombination emission. The active layer is a single quantum well or multiple quantum wells, used for recombination emission of electrons and holes.

[0101] Similarly, the substrate processing method in this embodiment can improve the substrate's repairability, save substrate material, and reduce substrate production costs. The substrate obtained in this embodiment has easily repairable warpage and low warpage, thereby improving the growth quality of the light-emitting structure of the LED.

[0102] In summary, the substrate processing method of the present invention obtains an easily repairable surface shape based on the anisotropy of the crystal, and controls the warpage position of the substrate to correspond to the easily repairable position in the substrate surface shape during the cutting process. In the subsequent polishing process, the warpage position can be repaired. Since the warpage position is in an easily repairable position of the substrate surface shape, the amount of grinding required to repair the substrate surface shape can be reduced, thereby improving the surface shape repair capability.

[0103] Furthermore, the warpage of the substrate is located at the boundary between at least two crystal planes in the substrate surface. Since fatigue cracks are prone to occur at crystal plane boundaries, they are easier to remove during polishing, thus accelerating the rate of warpage planarization. Alternatively, the warpage of the substrate may be located at the boundary between at least two crystal planes in the substrate surface, or at the boundary between at least two crystal planes in the substrate surface and on the C-plane and / or N-plane of the substrate surface. Since the grinding rate of the C-plane and N-plane is higher than that of other crystal planes, controlling the warpage location as much as possible within the C-plane and N-plane can also improve repair efficiency and make warpage easier to repair.

[0104] Furthermore, the warped position of the substrate is aligned and fixed to the edge of the polishing head. The rotation speed of the polishing disc is controlled to be less than that of the polishing head, so that the force direction at the warped position of the substrate is in the negative tangential direction of the relative motion trajectory. Setting the rotation speed of the polishing disc to be less than that of the polishing head allows for greater force on the warped position of the substrate at the edge of the polishing head, thereby promoting faster removal of the warp and further improving the repair rate.

[0105] The light-emitting diode manufacturing method, substrate, and substrate in the light-emitting diode described in this invention are all made using the above-mentioned substrate processing method, and thus possess the aforementioned technical effects.

[0106] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A substrate processing method, characterized in that, include: Provide a crystal rod to be cut; Cutting the crystal rod to obtain a substrate includes: selecting a cutting angle that is offset from A to M by 2° to 30° to obtain a substrate surface containing at least two crystal plane boundaries and a C-plane and / or an N-plane. During the cutting process, the substrate with the required substrate shape is cut by wire cutting. The cross section of the crystal rod to be cut is divided into 60 cutting segments from the beginning to the end of the cutting. In the cutting interval from the 5th to the 55th cutting segment, the wire consumption is controlled to increase or decrease by 1% to 30%, so that the warping position of the substrate is located in an easily repairable position in the substrate shape. The easily repairable position includes the boundary line of at least two crystal planes in the substrate shape, or the boundary of at least two crystal planes in the substrate shape and the C-plane and / or N-plane in the substrate shape. The substrate is fixed to the polishing head and polished.

2. The substrate processing method according to claim 1, characterized in that, Prior to the step of cutting the crystal rod to obtain the substrate, the method further includes: The required substrate profile is determined based on the anisotropy of the crystal, and the crystal rod is cut to obtain the substrate profile.

3. The substrate processing method according to claim 2, characterized in that, The step of determining the required substrate surface type based on the anisotropy of the crystal includes: The substrate surface profile includes the boundary line of at least two crystal planes.

4. The substrate processing method according to claim 3, characterized in that, After the crystal ingot is cut to obtain the substrate, and before the substrate is fixed to the polishing head, the process further includes: Determine the most easily worn area on the polishing head; Align and fix the warped position of the substrate to the most wear-prone position of the polishing head.

5. The substrate processing method according to claim 4, characterized in that, Prior to the step of aligning and fixing the warped position of the substrate to the most wear-prone position of the polishing head, the method further includes: The substrate is then polished.

6. The substrate processing method according to claim 4, characterized in that, The step of determining the most wear-prone location of the substrate on the polishing head includes: Obtain the relative motion trajectory between the polishing head and the polishing disc during the polishing process; The tangent direction of the relative motion trajectory is determined as the position most prone to wear.

7. The substrate processing method according to claim 6, characterized in that, The step of aligning and fixing the warped position of the substrate to the most wear-prone position of the polishing head includes: The warped position of the substrate is fixed to the polishing head, and the warped extension direction of the warped position of the substrate is set perpendicular to the tangential direction of the relative motion trajectory.

8. The substrate processing method according to claim 6, characterized in that, The step of polishing the substrate includes: The rotational speed of the polishing disk is controlled to be less than the rotational speed of the polishing head, so as to control the force direction of the warped position of the substrate to be in the negative tangential direction of the relative motion trajectory.

9. The substrate processing method according to claim 1, characterized in that, The crystal rod is a sapphire crystal rod.

10. A substrate, characterized in that, The substrate is formed using the substrate processing method according to any one of claims 1 to 9.

11. A light-emitting diode, characterized in that, include: A substrate, wherein the substrate is formed using the substrate processing method according to any one of claims 1 to 9; A light-emitting structure formed on the surface of a substrate, wherein the light-emitting structure comprises, in sequence, a first semiconductor layer, an active layer, and a second semiconductor layer of the opposite type to the first semiconductor layer on the surface of the substrate.

12. A method for manufacturing a light-emitting diode, characterized in that, include: A substrate is provided, the substrate being formed using the substrate processing method according to any one of claims 1 to 9; A light-emitting structure is formed on the surface of the substrate, the light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer of the opposite type to the first semiconductor layer, which are sequentially formed on the surface of the substrate.

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