Substrate including light emitting diodes and display device including the same

Abstract

A display device is provided. The display device comprises: a first substrate having a first light-emitting region, a second light-emitting region, and a third light-emitting region defined therein, each emitting a first light; a first light-transmitting region facing the first substrate and overlapping with the first light-emitting region, a second light-transmitting region overlapping with the second light-emitting region, and a third light-transmitting region overlapping with the third light-emitting region, and a first surface facing the first substrate and a second surface opposite to the first surface; a first wavelength conversion pattern located on the first surface of the second substrate and overlapping with the first light-transmitting region; and a second wavelength conversion pattern located on the first surface of the second substrate and overlapping with the second light-transmitting region. and includes a light transmission pattern located on the first surface of the second substrate and overlapping with the third light-transmitting region, wherein the first wavelength conversion pattern includes a first base resin, a first wavelength shifter dispersed within the first base resin and converting the wavelength of the first light into the second light, and a first scatterer dispersed within the first base resin, wherein the second wavelength conversion pattern includes a second base resin, a second wavelength shifter dispersed within the second base resin and converting the wavelength of the first light into the third light, and a second scatterer dispersed within the second base resin, wherein the light transmission pattern includes a third base resin and a third scatterer dispersed within the third base resin, wherein the content (Wt(%)) of the second wavelength shifter within the second wavelength shifter measured by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) is 40 to 45, and the first wavelength shifter within the first wavelength shifter The content (Wt(%)) is 35 to 40.

Description

Technology Field

[0001] The present invention relates to a substrate comprising light-emitting elements and a display device comprising the same. Background Technology

[0002] The importance of display devices is gradually increasing with the development of multimedia. In response to this, various display devices such as Liquid Crystal Display Devices (LCDs) and Organic Light Emitting Diode Display Devices (OLEDs) are being developed.

[0003] Among the display devices, the self-luminous display device includes a self-luminous element, for example, an organic light-emitting element. The self-luminous element may include two opposing electrodes and a light-emitting layer interposed between them. When the self-luminous element is an organic light-emitting element, electrons and holes provided from the two electrodes recombine in the light-emitting layer to generate excitons, and light may be emitted as the generated excitons change from an excited state to a ground state.

[0004] Self-emissive display devices are attracting attention as next-generation display devices because they do not require light sources such as backlight units, allowing for low power consumption and lightweight, thin designs, as well as high-quality characteristics such as wide viewing angles, high brightness and contrast, and fast response speeds. The problem to be solved

[0005] The problem that the present invention aims to solve is to provide a substrate including a light-emitting element with improved light conversion efficiency of a wavelength conversion pattern.

[0006] Another problem that the present invention aims to solve is to provide a display device with improved light conversion efficiency of a wavelength conversion pattern.

[0007] The problems of the present invention are not limited to the technical problems mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0008] A display device according to an embodiment for solving the above problem comprises: a first substrate having a first light-emitting region, a second light-emitting region, and a third light-emitting region defined therein for emitting a first light, respectively; a second substrate having a first light-transmitting region facing the first substrate and overlapping with the first light-emitting region, a second light-transmitting region overlapping with the second light-emitting region, and a third light-transmitting region overlapping with the third light-emitting region, and a first surface facing the first substrate and a second surface opposite to the first surface; a first wavelength conversion pattern located on the first surface of the second substrate and overlapping with the first light-transmitting region; and a second wavelength conversion pattern located on the first surface of the second substrate and overlapping with the second light-transmitting region. and includes a light transmission pattern located on the first surface of the second substrate and overlapping with the third light-transmitting region, wherein the first wavelength conversion pattern includes a first base resin, a first wavelength shifter dispersed within the first base resin and wavelength-converting the first light into the second light, and a first scatterer dispersed within the first base resin, wherein the second wavelength conversion pattern includes a second base resin, a second wavelength shifter dispersed within the second base resin and wavelength-converting the first light into the third light, and a second scatterer dispersed within the second base resin, wherein the light transmission pattern includes a third base resin and a third scatterer dispersed within the third base resin, wherein the content (wt(%)) of the second wavelength shifter within the second wavelength shifter measured by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) is 40 to 45, and the first wavelength shifter within the first wavelength shifter The content (wt(%)) is 35 to 40.

[0009] A substrate including a light-emitting element according to another embodiment for solving the above problem comprises: a first substrate having a first light-transmitting region, a second light-transmitting region, and a third light-transmitting region defined therein, and including a first surface and a second surface opposite to the first surface; a first wavelength conversion pattern located on the first surface of the first substrate and overlapping with the first light-transmitting region; and a second wavelength conversion pattern located on the first surface of the first substrate and overlapping with the second light-transmitting region. and includes a light transmission pattern located on the first surface of the first substrate and overlapping with the third light-transmitting region, wherein the first wavelength conversion pattern includes a first base resin, a first wavelength shifter dispersed within the first base resin that converts the wavelength of a first light into a second light, and a first scatterer dispersed within the first base resin, wherein the second wavelength conversion pattern includes a second base resin, a second wavelength shifter dispersed within the second base resin that converts the wavelength of the first light into a third light, and a second scatterer dispersed within the second base resin, and wherein the light transmission pattern includes a third base resin and a third scatterer dispersed within the third base resin, wherein the content (wt(%)) of the second wavelength shifter within the second wavelength conversion pattern measured by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) is 40 to 45, and the first wavelength shifter within the first wavelength conversion pattern The content (wt(%)) is 35 to 40, and the thickness of the light conversion pattern is 8 μm to 12 μm.

[0010] A display device according to another embodiment for solving the above problem comprises: a first substrate having a first light-transmitting area, a second light-transmitting area, and a third light-transmitting area defined therein, and including a first surface and a second surface opposite to the first surface; a first wavelength conversion pattern located on the first surface of the first substrate and overlapping with the first light-transmitting area; and a second wavelength conversion pattern located on the first surface of the first substrate and overlapping with the second light-transmitting area. and includes a light transmission pattern located on the first surface of the first substrate and overlapping with the third light-transmitting region, wherein the first wavelength conversion pattern includes a first base resin, a first wavelength conversion pattern dispersed within the first base resin that converts the wavelength of a first light into a second light, and a first scatterer dispersed within the first base resin, the second wavelength conversion pattern includes a second base resin, a second wavelength conversion pattern dispersed within the second base resin that converts the wavelength of the first light into a third light, and a second scatterer dispersed within the second base resin, and the light transmission pattern includes a third base resin and a third scatterer dispersed within the third base resin, the thickness of the light conversion pattern is 8 μm to 12 μm, and the content (wt(%)) of the second wavelength shifter within the second wavelength conversion pattern and the first wavelength within the first wavelength conversion pattern measured by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) The ratio of the sifter content (wt(%)) is 1:1.1 to 1:1.3.

[0011] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0012] According to embodiments of the present invention, the optical conversion efficiency of the wavelength conversion pattern can be improved.

[0013] The effects according to the embodiments are not limited to those exemplified above, and a wider variety of effects are included in this specification. Brief explanation of the drawing

[0014] FIG. 1 is a cross-sectional view illustrating a schematic stacked structure of a display device according to one embodiment. FIG. 2 is a plan view of a display device according to one embodiment. FIG. 3 is an enlarged plan view of the Q1 portion of FIG. 2, and more specifically, a schematic plan view of a display substrate including the display device of FIG. 2. FIG. 4 is an enlarged plan view of the Q1 portion of FIG. 2, and more specifically, a schematic plan view of a color conversion substrate included in the display device of FIG. 2. FIG. 5 is a plan view illustrating a modified example of FIG. 3. FIG. 6 is a plan view illustrating a modified example of FIG. 4. Figure 7 is an enlarged plan view of the Q3 portion of Figure 2. FIG. 8 is a cross-sectional view of a display device according to one embodiment cut along the line X1-X1' of FIG. 3 and FIG. 4. Figure 9 is an enlarged cross-sectional view of the Q4 portion of Figure 8. FIG. 10 is a cross-sectional view illustrating a modified example of the structure shown in FIG. 9. FIG. 11 is a cross-sectional view of a display device according to one embodiment cut along the line X3-X3' of FIG. 7. FIG. 12 is a plan view illustrating the schematic arrangement of a third color filter in a color conversion substrate of a display device according to one embodiment. FIG. 13 is a plan view illustrating the schematic arrangement of a first color filter in a color conversion substrate of a display device according to one embodiment. FIG. 14 is a plan view illustrating the schematic arrangement of a second color filter in a color conversion substrate of a display device according to one embodiment. FIG. 15 is a plan view illustrating the schematic arrangement of a bank pattern, a first wavelength conversion pattern, a second wavelength conversion pattern, and a light transmission pattern in a color conversion substrate of a display device according to one embodiment. FIG. 16 is a graph showing the relative external quantum efficiency (EQE) according to the content of the second wavelength shifter for each thickness of the second wavelength conversion pattern of the second wavelength conversion pattern. FIG. 17 is a graph showing the relative external quantum efficiency (EQE) according to the content of the third scatterer for each thickness of the second wavelength conversion pattern of the second wavelength conversion pattern. Figure 18 is a graph showing the viscosity of the second wavelength conversion pattern material during the inkjet printing process according to the second wavelength shifter content of the second wavelength conversion pattern. FIG. 19 is a graph showing the relative external quantum efficiency (EQE) according to the content of the first wavelength shifter for each thickness of the first wavelength conversion pattern of the first wavelength conversion pattern. FIG. 20 is a graph showing the relative external quantum efficiency (EQE) according to the content of the second scatterer for each thickness of the first wavelength conversion pattern of the first wavelength conversion pattern. Figure 21 is a graph showing the viscosity of the first wavelength conversion pattern material during the inkjet printing process according to the first wavelength shifter content of the first wavelength conversion pattern. Figure 22 is a graph showing the transmittance (%) and WAD characteristics according to the concentration of the first scatterer of the light transmission pattern. Specific details for implementing the invention

[0015] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. The embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0016] When elements or a layer are referred to as being "on" another element or layer, this includes cases where the element is directly on top of the other element or where another layer or element is interposed in between. On the other hand, when an element is referred to as being "directly on," it indicates that no other element or layer is interposed in between. Throughout the specification, the same reference numerals refer to the same components.

[0017] Spatially relative terms such as 'below,' 'beneath,' 'lower,' 'above,' and 'upper' may be used to facilitate the description of the relationship between one element or component and another, as illustrated in the drawings. When used in addition to the directions depicted in the drawings, spatially relative terms should be understood as encompassing different orientations of the elements. For example, if an element depicted in a drawing is flipped, an element described as being 'below' or 'beneath' another element may be located 'above' of that other element. Therefore, the exemplary term 'below' may encompass both the lower and upper directions.

[0018] Although terms such as first, second, third, fourth, etc. are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may be any one of the second, third, or fourth components within the technical scope of the present invention.

[0019] The embodiments described herein will be explained with reference to plan and cross-sectional views, which are ideal schematic diagrams of the invention. Accordingly, the shape of the illustrative drawings may be modified due to manufacturing techniques and / or tolerances, etc. Therefore, the embodiments of the invention are not limited to the specific shapes depicted but include variations in shape resulting from the manufacturing process. Accordingly, the regions illustrated in the drawings have schematic properties, and the shapes of the regions illustrated in the drawings are intended to illustrate specific forms of the regions of the device and are not intended to limit the scope of the invention.

[0020] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.

[0021] FIG. 1 is a cross-sectional view illustrating a schematic stacked structure of a display device according to one embodiment.

[0022] Referring to FIG. 1, the display device (1) can be applied to various electronic devices such as tablet PCs, smartphones, car navigation units, cameras, center information displays (CID) provided in cars, wristwatch-type electronic devices, PDA (Personal Digital Assistant), PMP (Portable Multimedia Player), game consoles, small and medium-sized electronic devices, televisions, external billboards, monitors, personal computers, and laptop computers. These are merely examples presented, and it goes without saying that they can be adopted in other electronic devices as long as they do not deviate from the concept of the present invention.

[0023] The display device (1) may include a display area (DA) for displaying an image and a non-display area (NDA) for not displaying an image. In some embodiments, the non-display area (NDA) may be located around the display area (DA) and may surround the display area (DA). The image displayed in the display area (DA) can be seen by the user in the direction in which the arrow in the drawing is pointing among the third directions (Z).

[0024] To describe the schematic stacking structure of the display device (1), as shown in FIG. 1 in some embodiments, the display device (1) includes a display substrate (10), a color conversion substrate (30) facing the display substrate (10), and may further include a sealing member (50) that combines the display substrate (10) and the color conversion substrate (30), and a filler material (70) filled between the display substrate (10) and the color conversion substrate (30).

[0025] The display substrate (10) may include elements and circuits for displaying an image, such as a pixel circuit such as a switching element, a pixel defining film that defines a light-emitting region and a non-light-emitting region to be described later in the display area (DA), and a self-light emitting element. In an exemplary embodiment, the self-light emitting element may include at least one of an organic light-emitting diode, a quantum dot light-emitting diode, an inorganic-based micro light-emitting diode (e.g., Micro LED), and a nano-sized inorganic-based light-emitting diode (e.g., nano LED). For convenience of explanation, the case where the self-light emitting element is an organic light-emitting diode will be described as an example below.

[0026] A color conversion substrate (30) may be positioned on a display substrate (10) and may face the display substrate (10). In some embodiments, the color conversion substrate (30) may include a color conversion pattern that converts the color of incident light. In some embodiments, the color conversion substrate (30) may include at least one of a color filter and a wavelength conversion pattern as the color conversion pattern. In some embodiments, the color conversion substrate (30) may include both the color filter and the wavelength conversion pattern.

[0027] A sealing member (50) may be positioned between the display substrate (10) and the color conversion substrate (30) in the non-display area (NDA). The sealing member (50) may be positioned along the edges of the display substrate (10) and the color conversion substrate (30) in the non-display area (NDA) to surround the display area (DA) on a plane. The display substrate (10) and the color conversion substrate (30) may be mutually coupled via the sealing member (50).

[0028] In some embodiments, the sealing member (50) may be made of an organic material. For example, the sealing member (50) may be made of an epoxy resin, but is not limited thereto. In some other embodiments, the sealing member (50) may be applied in the form of a frit including glass, etc.

[0029] A filler material (70) may be located in the space between the display substrate (10) and the color conversion substrate (30) surrounded by the sealing member (50). The filler material (70) may fill the space between the display substrate (10) and the color conversion substrate (30).

[0030] In some embodiments, the filler (70) may be made of a material that transmits light. In some embodiments, the filler (70) may be made of an organic material. For example, the filler (70) may be made of a silicone-based organic material, an epoxy-based organic material, or a mixture of a silicone-based organic material and an epoxy-based organic material.

[0031] In some embodiments, the filler (70) may be made of a material having an extinction coefficient substantially zero. The refractive index and the extinction coefficient are correlated, and as the refractive index decreases, the extinction coefficient also decreases. And when the refractive index is 1.7 or less, the extinction coefficient may converge substantially zero. In some embodiments, the filler (70) may be made of a material having a refractive index of 1.7 or less, thereby preventing or minimizing the absorption of light provided by the self-luminous element as it passes through the filler (70). In some embodiments, the filler (70) may be made of an organic material having a refractive index of 1.4 to 1.6.

[0032] Although the display device (1) in FIG. 1 is illustrated as comprising a display substrate (10), a color conversion substrate (30), a sealing member (50), and a filler (70), in some embodiments, the sealing member (50) and the filler (70) may be omitted from the display device (1), and the components of the color conversion substrate (30), excluding the second base portion (310), may be arranged on the display substrate (10).

[0033] FIG. 2 is a plan view of a display device according to one embodiment, FIG. 3 is an enlarged plan view of portion Q1 of FIG. 2, more specifically a schematic plan view of a display substrate included in the display device of FIG. 2, FIG. 4 is an enlarged plan view of portion Q1 of FIG. 2, more specifically a schematic plan view of a color conversion substrate included in the display device of FIG. 2, FIG. 5 is a plan view illustrating a modified example of FIG. 3, FIG. 6 is a plan view illustrating a modified example of FIG. 4, and FIG. 7 is an enlarged plan view of portion Q3 of FIG. 2.

[0034] Referring further to FIG. 2 through FIG. 7 in addition to FIG. 1, in some embodiments, the display device (1) may be formed in a planar rectangular shape as shown in FIG. 2. The display device (1) may include two first sides (L1) and a third side (L3) extending in a first direction (X), and two second sides (L2) and a fourth side (L4) extending in a second direction (Y) intersecting the first direction (X). The corners where each side of the display device (1) meets may be right angles, but are not limited thereto. In some embodiments, the lengths of the first sides (L1) and the third sides (L3) and the lengths of the second sides (L2) and the fourth sides (L4) may differ from each other. For example, the first sides (L1) and the third sides (L3) may be relatively longer than the second sides (L2) and the fourth sides (L4). The planar shape of the display device (1) is not limited to the example shown and may be applied as a circular or other shape.

[0035] In some embodiments, the display device (1) may further include a flexible circuit board (FPC) and a driver chip (IC).

[0036] As shown in FIG. 3, a plurality of light-emitting regions (LA1, LA2, LA3) and non-light-emitting regions (NLA) may be defined in the display substrate (10) in the display area (DA).

[0037] In some embodiments, a first light-emitting region (LA1), a second light-emitting region (LA2), and a third light-emitting region (LA3) may be defined in the display area (DA) of the display substrate (10). The first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) may be regions where light generated from a light-emitting element of the display substrate (10) is emitted to the outside of the display substrate (10), and a non-light-emitting region (NLA) may be a region where light is not emitted to the outside of the display substrate (10). In some embodiments, the non-light-emitting region (NLA) may surround each of the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) within the display area (DA).

[0038] In some embodiments, the light emitted externally from the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) may be light of a third color. In some embodiments, the light of the third color may be blue light and may have a peak wavelength in the range of about 440 nm to about 480 nm. Here, the peak wavelength refers to the wavelength at which the intensity of the light is maximum.

[0039] In some embodiments, the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) form a group, and multiple groups may be defined in the display region (DA).

[0040] In some embodiments, as illustrated in FIG. 3, the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) may be positioned sequentially along the first direction (X). In some embodiments, within the display area (DA), the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) may form a group and be repeatedly arranged along the first direction (X) and the second direction (Y).

[0041] However, this is not limited to the arrangement of the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3), and the arrangement of the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) may be located on one side of the first light-emitting region (LA1) and the second light-emitting region (LA2) along the second direction (Y), as illustrated in FIG. 5.

[0042] Below, an example is described in which the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) are arranged as shown in FIG. 3.

[0043] As illustrated in FIG. 4, a plurality of light-transmitting regions (TA1, TA2, TA3) and a light-blocking region (BA) may be defined in the color conversion substrate (30) in the display area (DA). The light-transmitting regions (TA1, TA2, TA3) may be regions where light emitted from the display substrate (10) passes through the color conversion substrate (30) and is provided to the outside of the display device (1). The light-blocking region (BA) may be a region where light emitted from the display substrate (10) does not pass through.

[0044] In some embodiments, a first light-transmitting area (TA1), a second light-transmitting area (TA2), and a third light-transmitting area (TA3) may be defined in the color-converting substrate (30).

[0045] The first light-emitting region (TA1) may correspond to or overlap with the first light-emitting region (LA1). Similarly, the second light-emitting region (TA2) may correspond to or overlap with the second light-emitting region (LA2), and the third light-emitting region (TA3) may correspond to or overlap with the third light-emitting region (LA3).

[0046] In some embodiments, as shown in FIG. 3, when the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3) are positioned sequentially along the first direction (X), as shown in FIG. 4, the first light-emitting region (TA1), the second light-emitting region (TA2), and the third light-emitting region (TA3) may also be positioned sequentially along the first direction (X).

[0047] Alternatively, as shown in FIG. 5, the first light-emitting region (LA1) and the second light-emitting region (LA2) are adjacent to each other along the first direction (X), and the third light-emitting region (LA3) is located on one side of the first light-emitting region (LA1) and the second light-emitting region (LA2) along the second direction (Y). As shown in FIG. 6, the first light-emitting region (TA1) and the second light-emitting region (TA2) are adjacent to each other along the first direction (X), and the third light-emitting region (TA3) is located on one side of the first light-emitting region (TA1) and the second light-emitting region (TA2) along the second direction (Y).

[0048] In some embodiments, the light of the third color provided from the display substrate (10) may be provided to the outside of the display device (1) by passing through the first light-transmitting area (TA1), the second light-transmitting area (TA2), and the third light-transmitting area (TA3). If the light emitted from the first light-transmitting area (TA1) to the outside of the display device (1) is referred to as the first emitted light, the light emitted from the second light-transmitting area (TA2) to the outside of the display device (1) is referred to as the second emitted light, and the light emitted from the third light-transmitting area (TA3) to the outside of the display device (1) is referred to as the third emitted light, then the first emitted light may be light of the first color, the second emitted light may be light of the second color different from the first color, and the third emitted light may be light of the third color. In some embodiments, the third color light may be blue light having a peak wavelength in the range of 440 nm to about 480 nm as described above, and the first color light may be red light having a peak wavelength in the range of about 610 nm to about 650 nm. In addition, the second color light may be green light having a peak wavelength in the range of about 510 nm to about 550 nm.

[0049] A light-blocking area (BA) may be located around the first light-transmitting area (TA1), the second light-transmitting area (TA2), and the third light-transmitting area (TA3) of the color conversion substrate (30) within the display area (DA). In some embodiments, the light-blocking area (BA) may surround the first light-transmitting area (TA1), the second light-transmitting area (TA2), and the third light-transmitting area (TA3). Additionally, the light-blocking area (BA) may also be located in the non-display area (NDA) of the display device (1).

[0050] Referring again to FIG. 2, a dam member (DM) and a sealing member (50) may be disposed in the non-display area (NDA) of the display device (1).

[0051] The dam member (DM) can block organic material (or monomer) from overflowing during the process of forming a sealing layer placed in the display area (DA), thereby preventing the organic material of the sealing layer from extending toward the edge of the display device (1).

[0052] In some embodiments, the dam member (DM) may be positioned to completely surround the display area (DA) on a plane.

[0053] The sealing member (50) can combine the display substrate (10) and the color conversion substrate (30) as described above.

[0054] The sealing member (50) may be located outside the dam member (DM) in the non-display area (NDA) and may be positioned to completely surround the dam member (DM) and the display area (DA) in a plane.

[0055] The non-display area (NDA) of the display device (1) may include a pad area (PDA), and a plurality of connection pads (PD) may be located in the pad area (PDA).

[0056] In some embodiments, the connection pad (PD) may be located in a portion adjacent to the long side of the non-display area (NDA), and, for example, may be located in a portion adjacent to the first side (L1) of the non-display area (NDA). The connection pad (PD) may be electrically connected to a pixel circuit, etc. located within the display area (DA) via a connection wire, etc.

[0057] The display substrate (10 in FIG. 1) of the display device (1) may include the above-described dam member (DM) and connection pad (PD).

[0058] The flexible circuit board (FPC) can be connected to a connection pad (PD). The flexible circuit board (FPC) can electrically connect the display board (10 in FIG. 1) to a circuit board, etc., that provides signals, power, etc., for driving the display device (1).

[0059] The driver chip (IC) can be electrically connected to the circuit board, etc. to receive data and signals, etc. In some embodiments, the driver chip (IC) may be a data driver chip and can receive data control signals and image data, etc. from the circuit board, etc., and generate and output data voltages, etc. corresponding to the image data.

[0060] In some embodiments, the driver chip (IC) may be mounted on a flexible circuit board (FPC). For example, the driver chip (IC) may be mounted on the flexible circuit board (FPC) in the form of a Chip On Film (COF).

[0061] Data voltage provided by the driving chip (IC), power provided by the circuit board, etc., can be transmitted to the pixel circuit, etc. of the display board (10 in FIG. 1) via the flexible circuit board (FPC) and connection pad (PD).

[0062] The structure of the display device (1) is described in more detail below.

[0063] FIG. 8 is a cross-sectional view of a display device according to one embodiment cut along the line X1-X1' of FIG. 3 and 4. FIG. 9 is an enlarged cross-sectional view of the Q4 portion of FIG. 8. FIG. 10 is a cross-sectional view illustrating a modified example of the structure shown in FIG. 9. FIG. 11 is a cross-sectional view of a display device according to one embodiment cut along the line X3-X3' of FIG. 7.

[0064] With further reference to FIGS. 8 to 11 in addition to FIGS. 1 to 7, the display device (1) includes a display substrate (10) and a color conversion substrate (30) as described above, and may further include a filler (70) located between the display substrate (10) and the color conversion substrate (30).

[0065] The following describes the display substrate (10).

[0066] The first base portion (110) may be made of a material that is transparent. In some embodiments, the first base portion (110) may be a glass substrate or a plastic substrate. If the first base portion (110) is a plastic substrate, the first base portion (110) may be flexible.

[0067] As described above, in some embodiments, a plurality of light-emitting regions (LA1, LA2, LA3) and non-light-emitting regions (NLA) may be defined in the first base portion (110) in the display area (DA).

[0068] In some embodiments, the first side (L1), second side (L2), third side (L3) and fourth side (L4) of the display device (1) may be identical to the four sides of the first base part (110). That is, the first side (L1), second side (L2), third side (L3) and fourth side (L4) of the display device (1) may be referred to as the first side (L1), second side (L2), third side (L3) and fourth side (L4) of the first base part (110).

[0069] A buffer layer (111) may be further located on the first base portion (110). The buffer layer (111) may be located on the first base portion (110) and may be positioned in the display area (DA) and non-display area (NDA). The buffer layer (111) may block foreign matter or moisture penetrating through the first base portion (110). For example, the buffer layer (111) may include inorganic materials such as SiO2, SiNx, and SiON, and may be formed as a single layer or a multilayer.

[0070] A lower light-blocking layer (BML) may be located on the buffer layer (111). The lower light-blocking layer (BML) can block external light or light from a light-emitting element from flowing into the semiconductor layer (ACT) to be described later, and accordingly, it can prevent leakage current caused by light from the thin-film transistor (TL) to be described later or reduce leakage current.

[0071] In some embodiments, the lower light-blocking layer (BML) may be made of a material that blocks light and is conductive. For example, the lower light-blocking layer (BML) may comprise a single material or an alloy thereof among metals such as (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and neodymium (Nd). In some embodiments, the lower light-blocking layer (BML) may be a single layer or a multilayer structure. For example, if the lower light-blocking layer (BML) is a multilayer structure, the lower light-blocking layer (BML) may be a laminated structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a laminated structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3), but is not limited thereto.

[0072] In some embodiments, a plurality of lower light-blocking layers (BML) are provided to correspond to each semiconductor layer (ACT) and may overlap with the semiconductor layer (ACT). In some embodiments, the width of the lower light-blocking layer (BML) may be wider than the width of the semiconductor layer (ACT).

[0073] In some embodiments, the lower shielding layer (BML) may be part of a data line, a power supply line, wiring that electrically connects a thin-film transistor not shown in the drawing and a thin-film transistor (TL) shown in the drawing. In some embodiments, the lower shielding layer (BML) may be made of a material having a lower resistance than the second conductive layer or the source electrode (SE) and drain electrode (DE) included in the second conductive layer.

[0074] A first insulating layer (113) may be located on the lower light-blocking layer (BML). In some embodiments, the first insulating layer (113) may be located in the display area (DA) and the non-display area (NDA). The first insulating layer (113) may cover the lower light-blocking layer (BML). In some embodiments, the first insulating layer (113) may include inorganic materials such as SiO2, SiNx, SiON, Al2O3, TiO2, Ta2O, HfO2, ZrO2, etc.

[0075] A semiconductor layer (ACT) may be located on the first insulating layer (113). In some embodiments, the semiconductor layer (ACT) may be positioned to correspond to the first light-emitting region (LA1), the second light-emitting region (LA2), and the third light-emitting region (LA3), respectively, in the display area (DA).

[0076] In some embodiments, the semiconductor layer (ACT) may include an oxide semiconductor. For example, the semiconductor layer (ACT) may be formed from a Zn oxide-based material, such as Zn oxide, In-Zn oxide, Ga-In-Zn oxide, etc., and may be an IGZO (In-Ga-Zn-O) semiconductor containing metals such as indium (In) and gallium (Ga) in ZnO. However, it is not limited thereto, and the semiconductor layer (ACT) may include amorphous silicon or polysilicon, etc.

[0077] In some embodiments, the semiconductor layer (ACT) may be arranged to overlap with each lower light-blocking layer (BML), thereby suppressing the generation of photocurrent in the semiconductor layer (ACT).

[0078] A first conductive layer may be located on the semiconductor layer (ACT), and the first conductive layer may include a gate electrode (GE) and a first gate metal (WR1). The gate electrode (GE) may be located in the display area (DA) and arranged to overlap with the semiconductor layer (ACT). As shown in FIG. 11, the first gate metal (WR1) may include a portion of wiring that electrically connects to the connection pad (PD in FIG. 2) and the elements located within the display area (DA in FIG. 2), such as a thin-film transistor (TL) and a light-emitting element.

[0079] The gate electrode (GE) and the first gate metal (WR1) may include one or more materials selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), taking into account adhesion with adjacent layers, surface flatness of the stacked layers, and processability, and may be formed as a single layer or a multilayer.

[0080] In the display area (DA), a gate insulating layer (115) may be located between the semiconductor layer (ACT) and the first conductive layer or between the semiconductor layer (ACT) and the gate electrode (GE). In some embodiments, the gate electrode (GE) and the gate insulating layer (115) may function as a mask to mask the channel area of ​​the semiconductor layer (ACT), and the width of the gate electrode (GE) and the gate insulating layer (115) may be narrower than the width of the semiconductor layer (ACT).

[0081] In some embodiments, the gate insulating layer (115) may not be formed as a single layer disposed on the front surface of the first base portion (110), but may be formed as a partially patterned shape. In some embodiments, the width of the patterned gate insulating layer (115) may be wider than the width of the gate electrode (GE) or the first conductive layer.

[0082] In some embodiments, the gate insulating layer (115) may include an inorganic material. For example, the gate insulating layer (115) may include the inorganic material exemplified in the description of the first insulating layer (113).

[0083] In the non-display area (NDA), the gate insulating layer (115) may be located between the first gate metal (WR1) and the first insulating layer (113).

[0084] A second insulating layer (117) covering a semiconductor layer (ACT) and a gate electrode (GE) may be located on the gate insulating layer (115). The second insulating layer (117) may be located in a display area (DA) and a non-display area (NDA). In some embodiments, the second insulating layer (117) may function as a planarizing film providing a flat surface.

[0085] In some embodiments, the second insulating layer (117) may comprise an organic material. For example, the second insulating layer (117) may comprise at least one of photoacrylic (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluorinated polymer, epoxy resin, benzocyclobutene series resin, siloxane series resin, and silane resin, but is not limited thereto. In some embodiments, the second insulating layer (117) may comprise an inorganic material.

[0086] The second conductive layer may be located on the second insulating layer (117), and the second conductive layer may include a source electrode (SE), a drain electrode (DE), a power supply wiring (VSL), and a first pad electrode (PD1) of a connection pad (PD).

[0087] The source electrode (SE) and the drain electrode (DE) may be located within the display area (DA) and may be spaced apart from each other.

[0088] The drain electrode (DE) and the source electrode (SE) can each be connected to the semiconductor layer (ACT) by penetrating the second insulating layer (117).

[0089] In some embodiments, the source electrode (SE) may be connected to the lower light-blocking layer (BML) by penetrating the first insulating layer (113) and the second insulating layer (117). If the lower light-blocking layer (BML) is part of a wiring that transmits a signal or voltage, the source electrode (SE) may be connected to and electrically coupled to the lower light-blocking layer (BML) to receive the voltage, etc. provided to the wiring. Alternatively, if the lower light-blocking layer (BML) is a floating pattern rather than a separate wiring, the voltage, etc. provided to the source electrode (SE) may be transmitted to the lower light-blocking layer (BML).

[0090] Alternatively, unlike as illustrated in FIG. 8, the drain electrode (DE) may be connected to the lower light-shielding layer (BML) by penetrating the first insulating layer (113) and the second insulating layer (117). If the lower light-shielding layer (BML) is not a wiring that provides a separate signal, the voltage applied to the drain electrode (DE) may be transmitted to the lower light-shielding layer (BML).

[0091] The above-described semiconductor layer (ACT), gate electrode (GE), source electrode (SE), and drain electrode (DE) can form a thin-film transistor (TL) which is a switching element. In some embodiments, the thin-film transistor (TL) may be located in a first light-emitting region (LA1), a second light-emitting region (LA2), and a third light-emitting region (LA3), respectively. In some embodiments, a portion of the thin-film transistor (TL) may be located in a non-light-emitting region (NLA).

[0092] The power supply wiring (VSL) may be located in the non-display area (NDA). The power supply wiring (VSL) may be supplied with a driving voltage, such as ELVSS voltage, provided to the cathode electrode (CE).

[0093] The first pad electrode (PD1) of the connection pad (PD) can be a pad area (PDA in FIG. 2) of the non-display area (NDA). In some embodiments, the first pad electrode (PD1) can be electrically connected to the first gate metal (WR1) by penetrating the second insulating layer (117).

[0094] The source electrode (SE), drain electrode (DE), power supply wiring (VSL), and the first pad electrode (PD1) of the connection pad (PD) may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer. In one embodiment, the source electrode (SE), drain electrode (DE), power supply wiring (VSL), and the first pad electrode (PD1) of the connection pad (PD) may be formed with a multilayer structure of Ti / Al / Ti.

[0095] A third insulating layer (130) may be positioned on the second insulating layer (117). The third insulating layer (130) may cover a thin-film transistor (TL) in a display area (DA) and expose a portion of the power supply wiring (VSL) in a non-display area (NDA).

[0096] In some embodiments, the third insulating layer (130) may be a planarization film. In some embodiments, the third insulating layer (130) may be made of an organic material. For example, the third insulating layer (130) may include an acrylic resin, an epoxy resin, an imide resin, an ester resin, etc. In some embodiments, the third insulating layer (130) may include a photosensitive organic material.

[0097] In the display area (DA), the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be located on the third insulating layer (130). Additionally, in the non-display area (NDA), the connection electrode (CNE) and the second pad electrode (PD2) of the connection pad (PD) may be located on the third insulating layer (130).

[0098] The first anode electrode (AE1) overlaps with the first light-emitting region (LA1) and at least a portion may extend to the non-light-emitting region (NLA). The second anode electrode (AE2) overlaps with the second light-emitting region (LA2) but at least a portion may extend to the non-light-emitting region (NLA), and the third anode electrode (AE3) overlaps with the third light-emitting region (LA3) but at least a portion may extend to the non-light-emitting region (NLA). The first anode electrode (AE1) can be connected to the drain electrode (DE) of the thin film transistor (TL) corresponding to the first anode electrode (AE1) by penetrating the third insulating layer (130), the second anode electrode (AE2) can be connected to the drain electrode (DE) of the thin film transistor (TL) corresponding to the second anode electrode (AE2) by penetrating the third insulating layer (130), and the third anode electrode (AE3) can be connected to the drain electrode (DE) of the thin film transistor (TL) corresponding to the third anode electrode (AE3) by penetrating the third insulating layer (130).

[0099] In some embodiments, the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be reflective electrodes, in which case the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may be metal layers comprising metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr. In other embodiments, the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may further comprise a metal oxide layer stacked on the metal layer. In an exemplary embodiment, the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3) may have a multilayer structure, exemplary a two-layer structure such as ITO / Ag, Ag / ITO, ITO / Mg, ITO / MgF, or a three-layer structure such as ITO / Ag / ITO.

[0100] The connecting electrode (CNE) can be electrically connected to the power supply wiring (VSL) in the non-display area (NDA) and can come into direct contact with the power supply wiring (VSL).

[0101] The second pad electrode (PD2) may be located on the first pad electrode (PD1) in the non-display area (NDA). The second pad electrode (PD2) may be electrically connected to the first pad electrode (PD1) by making direct contact with the first pad electrode (PD1).

[0102] In some embodiments, the connecting electrode (CNE) and the second pad electrode (PD2) are made of the same material as the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3), and may be formed together during the manufacturing process of the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3).

[0103] A pixel defining film (150) may be positioned on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3). The pixel defining film (150) may include an opening that exposes the first anode electrode (AE1), an opening that exposes the second anode electrode (AE2), and an opening that exposes the third anode electrode (AE3), and may define a first light-emitting region (LA1), a second light-emitting region (LA2), a third light-emitting region (LA3), and a non-light-emitting region (NLA). That is, the area of ​​the first anode electrode (AE1) that is exposed and not covered by the pixel defining film (150) may be the first light-emitting region (LA1). Similarly, the area of ​​the second anode electrode (AE2) that is exposed and not covered by the pixel defining film (150) may be the second light-emitting area (LA2), and the area of ​​the third anode electrode (AE3) that is exposed and not covered by the pixel defining film (150) may be the third light-emitting area (LA3). And the area where the pixel defining film (150) is located may be the non-light-emitting area (NLA).

[0104] In some embodiments, the pixel defining film (150) may include an organic insulating material such as an acrylic resin (polyacrylates resin), an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ethers resin, a polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0105] In some embodiments, the pixel defining film (150) may overlap with the light-blocking pattern (250) described later. In addition, in some embodiments, the pixel defining film (150) may also overlap with the bank pattern (370) described later.

[0106] As shown in FIGS. 8 and 11, a light-emitting layer (OL) may be located on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3).

[0107] In some embodiments, the light-emitting layer (OL) may have the shape of a continuous film formed across a plurality of light-emitting regions (LA1, LA2, LA3) and non-light-emitting regions (NLA). Although the drawings show the light-emitting layer (OL) located only within the display region (DA), it is not limited thereto. In some other embodiments, a portion of the light-emitting layer (OL) may be further located within the non-display region (NDA). A more detailed description of the light-emitting layer (OL) will be provided later.

[0108] A cathode electrode (CE) may be located on the light-emitting layer (OL). A portion of the cathode electrode (CE) may be located further within the non-display area (NDA). The cathode electrode (CE) may be electrically connected to and in contact with the connecting electrode (CNE) in the non-display area (NDA). A driving voltage (e.g., ELVSS voltage) provided to the power supply wiring (VSL) may be transmitted to the cathode electrode (CE) via the connecting electrode (CNE).

[0109] In some embodiments, the cathode electrode (CE) may be semipermeable or permeable. When the cathode electrode (CE) is semipermeable, the cathode electrode (CE) may comprise Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or compounds or mixtures thereof, for example, a mixture of Ag and Mg. Additionally, when the thickness of the cathode electrode (CE) is tens to hundreds of angstroms, the cathode electrode (CE) may be semipermeable.

[0110] When the cathode electrode (CE) is permeable, the cathode electrode (CE) may include a transparent conductive oxide (TCO). For example, the cathode electrode (CE) may include WxOx (tungsten oxide), TiO2 (titanium oxide), ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), MgO (magnesium oxide), etc.

[0111] In some embodiments, the cathode electrode (CE) can completely cover the light-emitting layer (OL). In some embodiments, the end of the cathode electrode (CE) may be located relatively outward from the end of the light-emitting layer (OL), and the end of the light-emitting layer (OL) may be completely covered by the cathode electrode (CE).

[0112] A first anode electrode (AE1), a light-emitting layer (OL), and a cathode electrode (CE) may form a first light-emitting element (ED1), a second anode electrode (AE2), a light-emitting layer (OL), and a cathode electrode (CE) may form a second light-emitting element (ED2), and a third anode electrode (AE3), a light-emitting layer (OL), and a cathode electrode (CE) may form a third light-emitting element (ED3). The first light-emitting element (ED1), the second light-emitting element (ED2), and the third light-emitting element (ED3) may each emit emitted light (LE).

[0113] As illustrated in FIG. 9, the emitted light (LE) finally emitted from the light-emitting layer (OL) may be a mixed light in which a first component (LE1) and a second component (LE2) are mixed. Among the emitted light (LE), the first component (LE1) and the second component (LE2) may each have a peak wavelength of 440 nm or more and less than 480 nm. That is, the emitted light (LE) may be blue light.

[0114] As illustrated in FIG. 9, in some embodiments, the light-emitting layer (OL) may be formed in a structure in which a plurality of light-emitting layers are overlapped, such as a tandem structure. For example, the light-emitting layer (OL) may include a first stack (ST1) comprising a first light-emitting layer (EML1), a second stack (ST2) located on the first stack (ST1) and comprising a second light-emitting layer (EML2), a third stack (ST3) located on the second stack (ST2) and comprising a third light-emitting layer (EML3), a first charge-generating layer (CGL1) located between the first stack (ST1) and the second stack (ST2), and a second charge-generating layer (CGL2) located between the second stack (ST2) and the third stack (ST3). The first stack (ST1), the second stack (ST2), and the third stack (ST3) may be arranged to overlap each other.

[0115] The first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) can be arranged to overlap each other.

[0116] In some embodiments, the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may all emit light of the first color, e.g., blue light. For example, the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may each be a blue light-emitting layer and may include an organic material.

[0117] In some embodiments, at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) emits first blue light having a first peak wavelength, and at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) emits second blue light having a second peak wavelength different from the first peak wavelength. For example, any one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) emits first blue light having a first peak wavelength, and the other two of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) emit second blue light having a second peak wavelength. That is, the emitted light (LE) finally emitted from the light-emitting layer (OL) may be a mixed light in which a first component (LE1) and a second component (LE2) are mixed, and the first component (LE1) may be a first blue light having a first peak wavelength, and the second component (LE2) may be a second blue light having a second peak wavelength.

[0118] In some embodiments, the range of one of the first peak wavelength and the second peak wavelength may be 440 nm or more and less than 460 nm, and the range of the other of the first peak wavelength and the second peak wavelength may be 460 nm or more and 480 nm or less. However, the range of the first peak wavelength and the range of the second peak wavelength are not limited thereto. For example, the range of the first peak wavelength and the range of the second peak wavelength may both include 460 nm. In some embodiments, either of the first blue light and the second blue light may be deep blue light, and the other of the first blue light and the second blue light may be sky blue light.

[0119] In some embodiments, the emitted light (LE) from the emitting layer (OL) is blue light and may include long wavelength and short wavelength components. Therefore, the emitting layer (OL) can ultimately emit blue light with a more broadly distributed emission peak as the emitted light (LE). This provides the advantage of improving color visibility at a side viewing angle compared to conventional light-emitting devices that emit blue light with a narrow (sharp) emission peak.

[0120] In some embodiments, the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may each include a host and a dopant. The host is not specifically limited as long as it is a commonly used substance, but for example, Alq3 (tris(8-hydroxyquinolino)aluminum), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK (poly(n-vinylcabazole)), ADN (9,10-di(naphthalene-2-yl)anthracene), TCTA (4,4',4''-Tris(carbazol-9-yl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene), TBADN (3-tert-butyl-9,10-di(naphth-2-yl)anthracene), DSA (distyrylarylene), CDBP (4,4'-bis(9-carbazolyl)-2,2 enyl), MADN(2-Methyl-9,10-bis(naphthalen-2-yl)anthracene), etc. can be used.

[0121] The first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) that emit blue light may each include a fluorescent material selected from the group consisting of, for example, spiro-DPVBi, spiro-6P, DSB (distyryl-benzene), DSA (distyryl-arylene), PFO (Polyfluorene)-based polymers and PPV (poly(p-phenylene vinylene)-based polymers). As another example, they may include a phosphorescent material comprising an organometallic complex such as (4,6-F2ppy)2Irpic.

[0122] As described above, at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) emits blue light in a different wavelength range from at least one other of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3). To emit blue light in a different wavelength range, the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may comprise the same material and a method of adjusting the resonance distance may be used. Alternatively, to emit blue light in a different wavelength range, at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) and at least one other of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may comprise different materials.

[0123] However, it is not limited to this, and the blue light emitted by each of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may all have a peak wavelength of 440 nm to 480 nm and may be made of the same material.

[0124] Or in another embodiment, at least one of the first emitting layer (EML1), the second emitting layer (EML2), and the third emitting layer (EML3) emits a first blue light having the first peak wavelength, another of the first emitting layer (EML1), the second emitting layer (EML2), and the third emitting layer (EML3) emits a second blue light having a second peak wavelength different from the first peak wavelength, and the remaining of the first emitting layer (EML1), the second emitting layer (EML2), and the third emitting layer (EML3) emits a third blue light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. In some other embodiments, the range of any one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be 440 nm or more and less than 460 nm. One of the ranges among the first peak wavelength, the second peak wavelength, and the third peak wavelength may be 460 nm or more and less than 470 nm, and the remaining range among the first peak wavelength, the second peak wavelength, and the third peak wavelength may be 470 nm or more and 480 nm or less.

[0125] In some other embodiments, the emitted light (LE) from the emitting layer (OL) is blue light and includes long wavelength components, medium wavelength components, and short wavelength components. Therefore, the emitting layer (OL) can ultimately emit blue light with a more broadly distributed emission peak as the emitted light (LE), thereby improving color visibility at a side viewing angle.

[0126] According to the embodiments described above, compared to conventional light-emitting devices that do not employ a tandem structure, that is, a structure in which multiple light-emitting layers are stacked, there is an advantage of increased light efficiency and an advantage of improving the lifespan of the display device.

[0127] Alternatively, in some other embodiments, at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may emit light of the third color, e.g., blue light, and at least another of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may emit light of the third color, e.g., green light. In some other embodiments, the range of the peak wavelength of the blue light emitted by at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may be 440 nm or more to 480 nm or 460 nm or more to 480 nm. The green light emitted by at least another of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may have a peak wavelength in the range of 510 nm to 550 nm.

[0128] For example, any one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may be a green light-emitting layer that emits green light, and the other two of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may be blue light-emitting layers that emit blue light. If the other two of the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) are blue light-emitting layers, the peak wavelength range of the blue light emitted by the two blue light-emitting layers may be the same, or the peak wavelength ranges emitted by the two blue light-emitting layers may be different from each other.

[0129] According to some other embodiments, the emitted light (LE) from the emitting layer (OL) may be a mixed light in which a first component (LE1) of blue light and a second component (LE2) of green light are mixed. For example, if the first component (LE1) is deep blue light and the second component (LE2) is green light, the emitted light (LE) may be light having a sky blue color. Similar to the embodiments described above, the emitted light (LE) from the emitting layer (OL) is a mixed light of blue light and green light, containing a long wavelength component and a short wavelength component. Thus, the emitting layer (OL) can ultimately emit blue light having a more broadly distributed emission peak as the emitted light (LE), thereby improving color visibility at a side viewing angle. In addition, since the second component (LE2) of the emitted light (LE) is green light, the green light component among the light provided externally from the display device (1) can be supplemented, and accordingly, the color reproduction of the display device (1) can be improved.

[0130] In some other embodiments, the green light-emitting layer among the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3) may include a host and a dopant. The host included in the green light-emitting layer is not particularly limited as long as it is a commonly used material, but for example, Alq3 (tris(8-hydroxyquinolino)aluminum), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK (poly(n-vinylcabazole)), ADN (9,10-di(naphthalene-2-yl)anthracene), TCTA (4,4',4''-Tris(carbazol-9-yl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene), TBADN (3-tert-butyl-9,10-di(naphth-2-yl)anthracene), DSA (distyrylarylene), CDBP (4,4'-bis(9-carbazolyl)-2,2''-dimethyl-biphenyl), MADN(2-Methyl-9,10-bis(naphthalen-2-yl)anthracene), etc., can be used.

[0131] The dopant included in the above green light-emitting layer may be a fluorescent material or a phosphorescent material including, for example, Alq3(tris-(8-hydroyquinolato) aluminum(III)), such as Ir(ppy)3(fac tris(2-phenylpyridine)iridium), Ir(ppy)2(acac)(Bis(2-phenylpyridine)(acetylacetonate)iridium(III)), Ir(mpyp)3(2-phenyl-4-methyl-pyridine iridium), etc.

[0132] The first charge generation layer (CGL1) may be located between the first stack (ST1) and the second stack (ST2). The first charge generation layer (CGL1) may serve to inject charge into each light-emitting layer. The first charge generation layer (CGL1) may serve to regulate the charge balance between the first stack (ST1) and the second stack (ST2). The first charge generation layer (CGL1) may include an n-type charge generation layer (CGL11) and a p-type charge generation layer (CGL12). The p-type charge generation layer (CGL12) may be placed on the n-type charge generation layer (CGL11) and may be located between the n-type charge generation layer (CGL11) and the second stack (ST2).

[0133] The first charge generation layer (CGL1) may have a junction structure between the n-type charge generation layer (CGL11) and the p-type charge generation layer (CGL12). The n-type charge generation layer (CGL11) is positioned closer to the anode electrode (AE1, AE2, AE3) among the anode electrodes (AE1, AE2, AE3) and the cathode electrode (CE). The p-type charge generation layer (CGL12) is positioned closer to the cathode electrode (CE) among the anode electrodes (AE1, AE2, AE3) and the cathode electrode (CE). The n-type charge generation layer (CGL11) supplies electrons to the first light-emitting layer (EML1) adjacent to the anode electrodes (AE1, AE2, AE3), and the p-type charge generation layer (CGL12) supplies holes to the second light-emitting layer (EML2) included in the second stack (ST2). By placing the first charge generation layer (CGL1) between the first stack (ST1) and the second stack (ST2) to provide charge to each light-emitting layer, the light-emitting efficiency can be increased and the driving voltage can be lowered.

[0134] The first stack (ST1) may be positioned on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3), and may further include a first hole transport layer (HTL1), a first electron block layer (BIL1), and a first electron transport layer (ETL1).

[0135] The first hole transport layer (HTL1) may be located on the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3). The first hole transport layer (HTL1) serves to facilitate the transport of holes and may include a hole transport material. The hole transport material may include, but is not limited to, carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene derivatives, triphenylamine derivatives such as TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine) and TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine), NPB (N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine), TAPC (4,4'-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), etc.

[0136] The first electron block layer (BIL1) may be located on the first hole transport layer (HTL1) and between the first hole transport layer (HTL1) and the first light-emitting layer (EML1). The first electron block layer (BIL1) may be composed of a hole transport material and a metal or metal compound to prevent electrons generated in the first light-emitting layer (EML1) from moving to the first hole transport layer (HTL1). In some embodiments, the first hole transport layer (HTL1) and the first electron block layer (BIL1) described above may also be composed of a single layer in which the respective materials are mixed.

[0137] The first electron transport layer (ETL1) may be located on the first light-emitting layer (EML1) and may be located between the first charge generation layer (CGL1) and the first light-emitting layer (EML1). In some embodiments, the first electron transport layer (ETL1) is Alq3 (Tris(8-hydroxyquinolinato)aluminum), TPBi (1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen(4,7-Diphenyl-1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD (2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), It may include electron transport materials such as BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq2(berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2-yl)anthracene), and mixtures thereof. However, the present invention is not limited to the types of electron transport materials. The second stack (ST2) may be located on the first charge generation layer (CGL1) and may further include a second hole transport layer (HTL2), a second electron block layer (BIL2), and a second electron transport layer (ETL1).

[0138] The second hole transport layer (HTL2) may be located on the first charge generation layer (CGL1). The second hole transport layer (HTL2) may be made of the same material as the first hole transport layer (HTL1), or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer (HTL1). The second hole transport layer (HTL2) may be made of a single layer or may be made of multiple layers.

[0139] The second electron block layer (BIL2) may be located on the second hole transport layer (HTL2) and may be located between the second hole transport layer (HTL2) and the first light-emitting layer (EML2). The second electron block layer (BIL2) may be made of the same material and structure as the first electron block layer (BIL1), or may include one or more materials selected from the materials exemplified as the materials included in the first electron block layer (BIL1).

[0140] The second electron transport layer (ETL2) may be located on the second light-emitting layer (EML2) and may be located between the second charge generation layer (CGL2) and the second light-emitting layer (EML2). The second electron transport layer (ETL2) may be made of the same material and structure as the first electron transport layer (ETL1), or may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer (ETL1). The second electron transport layer (ETL2) may be made of a single layer or may be made of multiple layers.

[0141] The second charge generation layer (CGL2) is located on the second stack (ST2) and can be located between the second stack (ST2) and the third stack (ST3).

[0142] The second charge generation layer (CGL2) may be formed with the same structure as the first charge generation layer (CGL1) described above. For example, the second charge generation layer (CGL2) may include an n-type charge generation layer (CGL21) disposed closer to the second stack (ST2) and a p-type charge generation layer (CGL22) disposed closer to the cathode electrode (CE). The p-type charge generation layer (CGL22) may be disposed on the n-type charge generation layer (CGL21).

[0143] The second charge generation layer (CGL2) may be formed in a structure in which an n-type charge generation layer (CGL21) and a p-type charge generation layer (CGL22) are in contact with each other. The first charge generation layer (CGL1) and the second charge generation layer (CGL2) may be made of different materials or may be made of the same material.

[0144] The second stack (ST2) may be located on the second charge generation layer (CGL2) and may further include a third hole transport layer (HTL3) and a third electron transport layer (ETL3).

[0145] The third hole transport layer (HTL3) may be located on the second charge generation layer (CGL2). The third hole transport layer (HTL3) may be made of the same material as the first hole transport layer (HTL1), or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer (HTL1). The third hole transport layer (HTL3) may be made of a single layer or may be made of multiple layers. If the third hole transport layer (HTL3) is made of multiple layers, each layer may include different materials.

[0146] The third electron transport layer (ETL3) may be located on the third light-emitting layer (EML3) and may be located between the cathode electrode (CE) and the third light-emitting layer (EML3). The third electron transport layer (ETL3) may be made of the same material and the same structure as the first electron transport layer (ETL1), or it may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer (ETL1). The third electron transport layer (ETL3) may be a single layer or may be composed of multiple layers. If the third electron transport layer (ETL3) is composed of multiple layers, each layer may include different materials.

[0147] Although not shown in the drawing, a hole injection layer may be additionally located between the first stack (ST1) and the first anode electrode (AE1), the second anode electrode (AE2) and the third anode electrode (AE3), between the second stack (ST2) and the first charge generation layer (CGL1), and between the third stack (ST3) and the second charge generation layer (CGL2). The hole injection layer may serve to facilitate the smooth injection of holes into the first light-emitting layer (EML1), the second light-emitting layer (EML2), and the third light-emitting layer (EML3). In some embodiments, the hole injection layer may be composed of one or more selected from the group consisting of CuPc (cupper phthalocyanine), PEDOT (poly(3,4)-ethylenedioxythiophene), PANI (polyaniline), and NPD (N,N-dinaphthyl-N,N'-diphenyl benzidine), but is not limited thereto. In some embodiments, the hole injection layer may be located between the first stack (ST1) and the first anode electrode (AE1), the second anode electrode (AE2), and the third anode electrode (AE3), between the second stack (ST2) and the first charge generation layer (CGL1), and between the third stack (ST3) and the second charge generation layer (CGL2), respectively.

[0148] Although not shown in the drawings, an electron injection layer may be further located between the third electron transport layer (ETL3) and the cathode electrode (CE), between the second charge generation layer (CGL2) and the second stack (ST2), and between the first charge generation layer (CGL1) and the first stack (ST1). The electron injection layer serves to facilitate the injection of electrons and may use Alq3 (tris(8-hydroxyquinolino)aluminum), PBD, TAZ, spiro-PBD, BAlq, or SAlq, but is not limited thereto. Additionally, the electron injection layer may be a metal halide compound and may be, for example, one or more selected from the group consisting of MgF2, LiF, NaF, KF, RbF, CsF, FrF, LiI, NaI, KI, RbI, CsI, FrI, and CaF2, but is not limited thereto. Additionally, the electron injection layer may include lanthanide materials such as Yb, Sm, and Eu. Alternatively, the electron injection layer may simultaneously include metal halide materials and lanthanide materials, such as RbI:Yb and KI:Yb. When the electron injection layer includes both metal halide materials and lanthanide materials, the electron injection layer may be formed by co-deposition of the metal halide material and the lanthanide material. In some embodiments, the electron injection layer may be located between the third electron transport layer (ETL3) and the cathode electrode (CE), between the second charge generation layer (CGL2) and the second stack (ST2), and between the first charge generation layer (CGL1) and the first stack (ST1), respectively.

[0149] In addition to the structure described above, the structure of the light-emitting layer (OL) may be modified. For example, the light-emitting layer (OL) may be modified as shown in FIG. 11 as shown in the light-emitting layer (OLa). Unlike the structure shown in FIG. 9, the light-emitting layer (OLa) shown in FIG. 11 may further include a fourth stack (ST4) located between the third stack (ST3) and the second stack (ST2), and may also further include a third charge-generating layer (CGL3) located between the third stack (ST3) and the second stack (ST2).

[0150] The fourth stack (ST4) may include a fourth light-emitting layer (EML4) and may further include a fourth hole transport layer (HTL4), a third electron block layer (BIL3), and a fourth electron transport layer (ETL4).

[0151] The first light-emitting layer (EML1), the second light-emitting layer (EML2), the third light-emitting layer (EML3), and the fourth light-emitting layer (EML4) included in the light-emitting layer (OL) can each emit light of the first color, e.g., blue light. At least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), the third light-emitting layer (EML3), and the fourth light-emitting layer (EML4), and at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), the third light-emitting layer (EML3), and the fourth light-emitting layer (EML4) can emit blue light of different peak wavelength ranges.

[0152] Alternatively, at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), the third light-emitting layer (EML3), and the fourth light-emitting layer (EML4) may emit green light, and at least one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), the third light-emitting layer (EML3), and the fourth light-emitting layer (EML4) may emit blue light. For example, any one of the first light-emitting layer (EML1), the second light-emitting layer (EML2), the third light-emitting layer (EML3), and the fourth light-emitting layer (EML4) may be a green light-emitting layer, and the remaining three light-emitting layers may all be blue light-emitting layers.

[0153] The fourth hole transport layer (HTL4) may be located on the second charge generation layer (CGL2). The fourth hole transport layer (HTL4) may be made of the same material as the first hole transport layer (HTL1), or it may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer (HTL1). The fourth hole transport layer (HTL4) may be made of a single layer or multiple layers. If the fourth hole transport layer (HTL4) is made of multiple layers, each layer may include different materials.

[0154] The third electron block layer (BIL3) may be located on the fourth hole transport layer (HTL4) and between the fourth hole transport layer (HTL4) and the fourth light-emitting layer (EML4). The third electron block layer (BIL3) may be made of the same material and structure as the first electron block layer (BIL1), or may include one or more materials selected from the materials exemplified as the materials included in the first electron block layer (BIL1). In some other embodiments, the third electron block layer (BIL3) may be omitted.

[0155] The fourth electron transport layer (ETL4) may be located on the fourth light-emitting layer (EML4) and may be located between the third charge generation layer (CGL3) and the fourth light-emitting layer (EML4). The fourth electron transport layer (ETL4) may be made of the same material and structure as the first electron transport layer (ETL1), or may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer (ETL1). The fourth electron transport layer (ETL4) may be a single layer or may be composed of multiple layers. If the fourth electron transport layer (ETL4) is composed of multiple layers, each layer may include different materials.

[0156] The third charge generation layer (CGL3) may be formed with the same structure as the first charge generation layer (CGL1) described above. For example, the third charge generation layer (CGL3) may include an n-type charge generation layer (CGL31) positioned closer to the second stack (ST2) and a p-type charge generation layer (CGL32) positioned closer to the cathode electrode (CE). The p-type charge generation layer (CGL32) may be placed on the n-type charge generation layer (CGL31).

[0157] Although not shown in the drawing, the electron injection layer may be further located between the fourth stack (ST4) and the third charge generation layer (CGL3). Additionally, the hole injection layer may be further located between the fourth stack (ST4) and the second charge generation layer (CGL2).

[0158] In some embodiments, the light-emitting layer (OL) shown in FIG. 9 and the light-emitting layer (OLa) shown in FIG. 10 may not both include a red light-emitting layer in common, and accordingly, may not emit light of the first color, such as red light. That is, the emitted light (LE) may not include a light component with a peak wavelength in the range of 610 nm to about 650 nm, and the emitted light (LE) may include only a light component with a peak wavelength of 440 nm to 550 nm.

[0159] In some embodiments, as described above, the light-emitting element (ED1, ED2, ED3) may be composed of a single light-emitting layer without including a plurality of light-emitting layers (EML1, EML2, EML3) containing organic material. The single light-emitting layer may include an inorganic light-emitting layer containing quantum dots (QD), a micro LED, or a nano LED.

[0160] As shown in FIG. 11, a dam member (DM) may be located on the second insulating layer (117) in the non-display area (NDA).

[0161] The dam member (DM) may be located relatively outward from the power supply wiring (VSL). In other words, as shown in FIG. 11, the power supply wiring (VSL) may be located between the dam member (DM) and the display area (DA).

[0162] In some embodiments, the dam member (DM) may include a plurality of dams. For example, the dam member (DM) may include a plurality of dams. For example, the dam member (DM) may include a first dam (D1) and a second dam (D2).

[0163] The first dam (D1) may partially overlap with the power supply wiring (VSL) and may be spaced apart from the third insulation layer (130) with the power supply wiring (VSL) in between. In some embodiments, the first dam (D1) may include a first lower dam pattern (D11) located on the second insulation layer (117) and a first upper dam pattern (D12) located on the first lower dam pattern (D11).

[0164] The second dam (D2) may be located outside the first dam (D1) and may be spaced apart from the first dam (D1). In some embodiments, the second dam (D2) may include a second lower dam pattern (D21) located on the second insulating layer (117) and a second upper dam pattern (D22) located on the second lower dam pattern (D21).

[0165] In some embodiments, the first lower dam pattern (D11) and the second lower dam pattern (D21) are made of the same material as the third insulating layer (130) and can be formed simultaneously with the third insulating layer (130).

[0166] In some embodiments, the first upper dam pattern (D12) and the second upper dam pattern (D22) are made of the same material as the pixel defining film (150) and can be formed simultaneously with the pixel defining film (150).

[0167] In some embodiments, the heights of the first dam (D1) and the second dam (D2) may differ from each other. For example, the height of the second dam (D2) may be higher than the height of the first dam (D1). That is, as it moves further away from the display area (DA), the height of the dam included in the dam member (DM) may gradually increase, and accordingly, the overflow of organic matter can be more effectively blocked during the formation process of the organic layer (173) included in the sealing layer (170) to be described later.

[0168] As illustrated in FIGS. 8 and 11, a first capping layer (160) may be positioned on the cathode electrode (CE). The first capping layer (160) may be placed in common in the first light-emitting region (LA1), the second light-emitting region (LA2), the third light-emitting region (LA3), and the non-light-emitting region (NLA), and may improve viewing angle characteristics and increase external light-emitting efficiency.

[0169] The first capping layer (160) may include at least one of an inorganic material and an organic material having light transmittance. That is, the first capping layer (160) may be composed of an inorganic layer or an organic layer, or may be composed of an organic layer containing inorganic particles. For example, the first capping layer (160) may include a triamine derivative, a carbazole biphenyl derivative, an arylenediamine derivative, or an aluminoquinol complex (Alq3), etc.

[0170] Additionally, the first capping layer (160) may be composed of a mixture of a high-refractive index material and a low-refractive index material. Alternatively, the first capping layer (160) may include two layers with different refractive indices, such as a high-refractive index layer and a low-refractive index layer.

[0171] In some embodiments, the first capping layer (160) may completely cover the cathode electrode (CE). In some embodiments, as shown in FIG. 11, the end of the first capping layer (160) may be located relatively outward from the end of the cathode electrode (CE), and the end of the cathode electrode (CE) may be completely covered by the first capping layer (160).

[0172] A sealing layer (170) may be disposed on the first capping layer (160). The sealing layer (170) protects components located below the sealing layer (170), such as light-emitting elements (ED1, ED2, ED3), from external foreign substances such as moisture. The sealing layer (170) is disposed in common across the first light-emitting region (LA1), the second light-emitting region (LA2), the third light-emitting region (LA3), and the non-light-emitting region (NLA). In some embodiments, the sealing layer (170) may directly cover the cathode electrode (CE). In some embodiments, a capping layer (not shown in the drawing) covering the cathode electrode (CE) may be further disposed between the sealing layer (170) and the cathode electrode (CE), and in this case, the sealing layer (170) may directly cover the capping layer. The encapsulation layer (170) may be a thin film encapsulation layer.

[0173] In some embodiments, the packaging layer (170) may include a lower inorganic layer (171), an organic layer (173), and an upper inorganic layer (175) sequentially stacked on the first capping layer (160).

[0174] In some embodiments, the lower inorganic layer (171) may cover the first light-emitting element (ED1), the second light-emitting element (ED2), and the third light-emitting element (ED3) in the display area (DA). The lower inorganic layer (171) may cover the dam member (DM) in the non-display area (NDA) and may extend to the outside of the dam member (DM).

[0175] In some embodiments, the lower inorganic layer (171) may completely cover the first capping layer (160). In some embodiments, the end of the lower inorganic layer (171) may be located relatively outward from the end of the first capping layer (160), and the end of the first capping layer (160) may be completely covered by the lower inorganic layer (171).

[0176] The lower inorganic layer (171) may include a plurality of stacked films. A more detailed structure of the lower inorganic layer (171) will be described later.

[0177] An organic layer (173) may be positioned on the lower inorganic layer (171). The organic layer (173) may cover the first light-emitting element (ED1), the second light-emitting element (ED2), and the third light-emitting element (ED3) in the display area (DA). In some embodiments, a portion of the organic layer (173) may be located in the non-display area (NDA) but may not be located outside the dam member (DM). Although a portion of the organic layer (173) is depicted as being located inside the first dam (D1), it is not limited thereto. In some other embodiments, a portion of the organic layer (173) may be accommodated in the space between the first dam (D1) and the second dam (D2), and the end of the organic layer (173) may be located in the area between the first dam (D1) and the second dam (D2).

[0178] An upper inorganic layer (175) may be positioned on the organic layer (173). The upper inorganic layer (175) may cover the organic layer (173). In some embodiments, the upper inorganic layer (175) may form an inorganic-inorganic bond by being in direct contact with the lower inorganic layer (171) in the non-display area (NDA). In some embodiments, the ends of the upper inorganic layer (175) and the ends of the lower inorganic layer (171) may be substantially aligned. The upper inorganic layer (175) may comprise a plurality of stacked films. A more detailed structure of the upper inorganic layer (175) will be described later.

[0179] In some embodiments, the lower inorganic layer (171) and the upper inorganic layer (175) may each be composed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride, etc.

[0180] In some embodiments, the organic layer (173) may be composed of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, and perylene resin.

[0181] A color-changing substrate (30) will be described below with further reference to FIGS. 12 to 15 in addition to FIGS. 1 to 11.

[0182] FIG. 12 is a plan view illustrating the schematic arrangement of a third color filter in a color conversion substrate of a display device according to one embodiment. FIG. 13 is a plan view illustrating the schematic arrangement of a first color filter in a color conversion substrate of a display device according to one embodiment. FIG. 14 is a plan view illustrating the schematic arrangement of a second color filter in a color conversion substrate of a display device according to one embodiment. FIG. 15 is a plan view illustrating the schematic arrangement of a bank pattern, a first wavelength conversion pattern, a second wavelength conversion pattern, and a light transmission pattern in a color conversion substrate of a display device according to one embodiment.

[0183] The second base portion (310) shown in FIGS. 8 and FIGS. 11 may be made of a transparent material.

[0184] In some embodiments, the second base portion (310) may include a glass substrate or a plastic substrate. In some embodiments, the second base portion (310) may further include a separate layer located on the glass substrate or plastic substrate, such as an insulating layer, for example, an inorganic film.

[0185] As described above, in some embodiments, a plurality of light-transmitting regions (TA1, TA2, TA3) and light-blocking regions (BA) may be defined in the second base portion (310). When the second base portion (310) includes a glass substrate, the refractive index of the second base portion (310) may be about 1.5.

[0186] As illustrated in FIGS. 8 and FIGS. 11, a color filter layer may be disposed on one side of a second base portion (310) facing a display substrate (10). The color filter layer may include color filters (231, 233, 235) and a light-blocking pattern (250).

[0187] As illustrated in FIGS. 8, 11, and FIGS. 12 through 14, color filters (231, 233, 235) may each be positioned to overlap with light-transmitting areas (TA1, TA2, TA3). A light-blocking pattern (250) may be positioned to overlap with a light-blocking area (BA). That is, in this embodiment, the light-blocking area (BA) may be defined as the area where the light-blocking pattern (250) is positioned. The first color filter (231) may overlap with the first light-transmitting area (TA1), the second color filter (233) may overlap with the second light-transmitting area (TA2), and the third color filter (235) may overlap with the third light-transmitting area (TA3). The light-blocking pattern (250) may be positioned to overlap with the light-blocking area (BA) to block the transmission of light. In some embodiments, the light-blocking pattern (250) may be positioned in a planar, approximately grid shape. In one embodiment, the light-blocking pattern (250) may include a first light-blocking pattern portion (235a) on one surface of the second base portion (310), a second light-blocking pattern portion (231a) on the first light-blocking pattern portion (235a), and a third light-blocking pattern portion (233a) on the second light-blocking pattern portion (231a). The first light-blocking pattern portion (235a) may include the same material as the third color filter (235), the second light-blocking pattern portion (231a) may include the same material as the first color filter (231), and the third light-blocking pattern portion (233a) may include the same material as the second color filter (233). That is, the light-blocking pattern (250) may include a structure in which a first light-blocking pattern portion (235a), a second light-blocking pattern portion (231a), and a third light-blocking pattern portion (233a) are sequentially stacked from one side of the second base portion (310) on the light-blocking region (BA). In some other embodiments, the light-blocking pattern (250) may include an organic light-blocking material and may be formed through a coating and exposure process of the organic light-blocking material. For example, the organic light-blocking material may include a black matrix.

[0188] The first color filter (231) may function as a blocking filter that blocks blue light and green light. In some embodiments, the first color filter (231) may selectively transmit the first color light (e.g., red light) and block or absorb the second color light (e.g., green light) and the third color light (e.g., blue light). For example, the first color filter (231) may be a red color filter and may include a red colorant. The first color filter (231) may include a base resin and a red colorant dispersed within the base resin. As described below, the first color filter (231) may include at least two layers. The at least two layers may include a first layer and a second layer between the first layer and the second base portion (310).

[0189] The second color filter (233) may function as a blocking filter that blocks blue light and red light. In some embodiments, the second color filter (233) may selectively transmit the light of the second color (e.g., green light) and block or absorb the light of the third color (e.g., blue light) and the light of the first color (e.g., red light). For example, the second color filter (233) may be a green color filter and may include a green colorant.

[0190] The third color filter (235) can selectively transmit the light of the third color (e.g., blue light) and block or absorb the light of the first color (e.g., red light) and the light of the second color (e.g., green light). In some embodiments, the third color filter (235) may be a blue color filter and may include a blue colorant such as a blue dye or a blue pigment. As used herein, the term "colorant" includes both dyes and pigments.

[0191] As illustrated in FIGS. 8 and FIGS. 11, a low-refractive index layer (391) covering a light-blocking pattern (250), a first color filter (231), a second color filter (233), and a third color filter (235) may be located on one side of the second base portion (310). In some embodiments, the low-refractive index layer (391) may be in direct contact with the first color filter (231), the second color filter (233), and the third color filter (235). In some embodiments, the low-refractive index layer (391) may also be in direct contact with the light-blocking pattern (250).

[0192] The low refractive index layer (391) may have a lower refractive index than the wavelength conversion pattern (340, 350) and the light transmission pattern (330). For example, the low refractive index layer (391) may be made of an inorganic material. For example, the low refractive index layer (391) may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride, etc. In some embodiments, a plurality of hollow particles may be formed inside the low refractive index layer (391) to lower the refractive index of the low refractive index layer (391).

[0193] A low-refractive index capping layer (392) may be further disposed between the low-refractive index layer (391) and the wavelength conversion pattern (340, 350) and between the low-refractive index layer (391) and the light transmission pattern (330). In some embodiments, the low-refractive index capping layer (392) may be in direct contact with the wavelength conversion pattern (340, 350) and the light transmission pattern (330). Also in some embodiments, the low-refractive index capping layer (392) may be in direct contact with the bank pattern (370).

[0194] The low-refractive index capping layer (392) may have a lower refractive index than the wavelength conversion pattern (340, 350) and the light transmission pattern (330). For example, the low-refractive index capping layer (392) may be made of an inorganic material. For example, the low-refractive index capping layer (392) may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride, etc. In some embodiments, a plurality of hollow particles may be formed inside the low-refractive index capping layer (392) to lower the refractive index of the low-refractive index capping layer (392).

[0195] The low-refractive index capping layer (392) can prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the first color filter (231), the second color filter (233), and the third color filter (235). Additionally, the low-refractive index capping layer (392) can prevent the color material contained in the first color filter (231), the second color filter (233), and the third color filter (235) from spreading to a configuration different from the first color filter (231), the second color filter (233), and the third color filter (235), such as the first wavelength conversion pattern (340) and the second wavelength conversion pattern (350).

[0196] In some embodiments, the low-refractive index layer (391) and the low-refractive index capping layer (392) may cover the sides of the light-blocking pattern (250) in the non-display area (NDA). In some embodiments, the low-refractive index layer (391) may be in direct contact with the second base portion (310) in the non-display area (NDA).

[0197] A bank pattern (370) may be positioned on one side of the low-refractive index capping layer (392) facing the display substrate (10). In some embodiments, the bank pattern (370) may be positioned directly above one side of the low-refractive index capping layer (392) and may be in direct contact with the low-refractive index capping layer (392).

[0198] In some embodiments, the bank pattern (370) may be positioned to overlap with a non-luminescent region (NLA) or a light-blocking region (BA). For example, the light-blocking region (BA) may completely cover the bank pattern (370), and the light-blocking pattern (250) located in the light-blocking region (BA) may completely cover the bank pattern (370). The area of ​​the planar light-blocking pattern (250) may be larger than the area of ​​the bank pattern (370), and the area of ​​each color filter (231, 233, 235) may be smaller than the area of ​​the wavelength conversion pattern (340, 350) and the light transmission pattern (330).

[0199] In some embodiments, the bank pattern (370) may surround the first light-transmitting area (TA1), the second light-transmitting area (TA2), and the third light-transmitting area (TA3) on a plane as shown in FIG. 15. The bank pattern (370) may partition the space in which the first wavelength conversion pattern (340), the second wavelength conversion pattern (350), and the light transmission pattern (330) are placed.

[0200] In some embodiments, the bank pattern (370) may be formed as a single pattern connected integrally as shown in FIG. 15, but is not limited thereto. In other embodiments, the portion of the bank pattern (370) surrounding the first light-emitting area (TA1), the portion of the bank pattern (370) surrounding the second light-emitting area (TA2), and the portion of the bank pattern (370) surrounding the third light-emitting area (TA3) may be composed of separate individual patterns.

[0201] When the first wavelength conversion pattern (340), the second wavelength conversion pattern (350), and the light transmission pattern (330) are formed by a method of discharging an ink composition using a nozzle, i.e., an inkjet printing method, the bank pattern (370) can serve as a guide to stably position the discharged ink composition at a desired location. That is, the bank pattern (370) can function as a partition.

[0202] In some embodiments, the bank pattern (370) may overlap with the pixel defining film (150).

[0203] As illustrated in FIG. 11, in some embodiments, the bank pattern (370) may be located further within the non-display area (NDA). The bank pattern (370) may overlap with the light-blocking pattern (250) in the non-display area (NDA).

[0204] In some embodiments, the bank pattern (370) may include an organic material having photocurability. Also, in some embodiments, the bank pattern (370) may include an organic material having photocurability and containing a light-blocking material. If the bank pattern (370) has light-blocking properties, it can prevent light from interfering between adjacent light-emitting regions in the display area (DA). For example, the bank pattern (370) can prevent the emitted light (LE) emitted from the second light-emitting element (ED2) from being incident on the first wavelength conversion pattern (340) that overlaps with the first light-emitting region (LA1). Additionally, the bank pattern (370) can block or prevent external light from penetrating into the components located below the bank pattern (370) in the non-light-emitting region (NLA) and the non-display region (NDA).

[0205] As illustrated in FIGS. 8 and FIGS. 11, a first wavelength conversion pattern (340), a second wavelength conversion pattern (350), and a light transmission pattern (330) may be located on the low-refractive index layer (391). In some embodiments, the first wavelength conversion pattern (340), the second wavelength conversion pattern (350), and the light transmission pattern (330) may be located within a display area (DA).

[0206] The light transmission pattern (330) may overlap with the third light-emitting region (LA3) or the third light-emitting element (ED3). The light transmission pattern (330) may be located within the space partitioned by the bank pattern (370) in the third light-emitting region (TA3).

[0207] In some embodiments, the light transmission pattern (330) may be an island-shaped pattern as shown in FIG. 15.

[0208] The light transmission pattern (330) can transmit incident light. The emitted light (LE) provided by the third light-emitting element (ED3) may be blue light as described above. The emitted light (LE), which is blue light, passes through the light transmission pattern (330) and the third color filter (235) and is emitted to the outside of the display device (1). That is, the third light (L3) emitted to the outside of the display device (1) from the third light-emitting region (LA3) may be blue light.

[0209] In some embodiments, the light transmission pattern (330) may include a third base resin (331) and may further include a third scatterer (333) dispersed within the third base resin (331). Hereinafter, the components of the light transmission pattern (330) and the wavelength conversion patterns (340, 350) are distinguished by naming the base resin, scatterer, and / or wavelength shifter included in the light transmission pattern (330) and the wavelength conversion patterns (340, 350) and attaching the ordinal numbers “first,” “second,” and “third” to each component; however, the “first,” “second,” and “third” ordinal numbers attached to each component of the light transmission pattern (330) and the wavelength conversion patterns (340, 350) are not limited thereto, and it is understood that the order thereof may be changed and attached to each component.

[0210] The third base resin (331) may be made of a material with high light transmittance. In some embodiments, the third base resin (331) may be made of an organic material. For example, the third base resin (331) may include organic materials such as epoxy resin, acrylic resin, cardo resin, or imide resin.

[0211] The third scatterer (333) may have a different refractive index from the third base resin (331) and may form an optical interface with the third base resin (331). For example, the third scatterer (333) may be a light scatterer. The third scatterer (333) is not particularly limited as long as it is a material capable of scattering at least a portion of the transmitted light, but may be, for example, metal oxide particles or organic particles. Examples of the metal oxides include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and examples of the organic particles include acrylic resin or urethane resin. For example, the third scatterer (333) according to one embodiment may include titanium oxide (TiO2).

[0212] The third scatterer (333) can scatter light in a random direction regardless of the incident direction of the incident light without substantially changing the wavelength of the light passing through the light transmission pattern (330). In some embodiments, the light transmission pattern (330) can be in direct contact with the bank pattern (370).

[0213] The first wavelength conversion pattern (340) can overlap with the first light-emitting region (LA1), the first light-emitting element (ED1), or the first light-emitting region (TA1).

[0214] In some embodiments, the first wavelength conversion pattern (340) may be located within the space partitioned by the bank pattern (370) in the first light-emitting area (TA1).

[0215] In some embodiments, the first wavelength conversion pattern (340) may be formed in the form of an island pattern as shown in FIG. 15.

[0216] The first wavelength conversion pattern (340) can convert or shift the peak wavelength of the incident light into light of another specific peak wavelength and emit it. The wavelength conversion or shift of the first wavelength conversion pattern (340) can be achieved through the first wavelength shifter (345) described later. In some embodiments, the first wavelength conversion pattern (340) can convert the emitted light (LE) provided by the first light-emitting element (ED1) into red light having a peak wavelength in the range of 610 nm to 650 nm and emit it.

[0217] In some embodiments, the first wavelength conversion pattern (340) may include a first base resin (341) and a first wavelength shifter (345) dispersed within the first base resin (341), and may further include a first scatterer (343) dispersed within the first base resin (341).

[0218] The first base resin (341) may be made of a material with high light transmittance. In some embodiments, the first base resin (341) may be made of an organic material. In some embodiments, the first base resin (341) may be made of the same material as the third base resin (331) or may include at least one of the materials exemplified as constituent materials of the third base resin (331).

[0219] Examples of the first wavelength shifter (345) include quantum dots, quantum rods, or phosphors. For example, quantum dots may be particulate matter that emits a specific color as electrons transition from the conduction band to the valence band.

[0220] The above quantum dots may be semiconductor nanocrystalline materials. Depending on their composition and size, the quantum dots may have a specific bandgap and, after absorbing light, emit light having a specific wavelength. Examples of semiconductor nanocrystalline quantum dots include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0221] Group II-VI compounds are diatomic compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and may be selected from the group consisting of four-element compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0222] III-V group compounds may be selected from the group consisting of diatomic compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0223] Group IV-VI compounds may be selected from the group consisting of diatomic compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. Group IV compounds may be diatomic compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0224] In this case, the binary, ternary, or quaternary compounds may exist within the particle at a uniform concentration, or they may exist within the same particle with concentration distributions partially divided into different states. Additionally, the structure may have a core / shell configuration where one quantum dot surrounds another. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases towards the center.

[0225] In some embodiments, the quantum dot may have a core-shell structure comprising a core containing the aforementioned nanocrystal and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center. Examples of the shell of the quantum dot include oxides of metals or non-metals, semiconductor compounds, or combinations thereof.

[0226] For example, the oxide of the metal or nonmetal mentioned above may be exemplified as a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0227] In addition, the above semiconductor compounds may be examples of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0228] The light emitted by the first wavelength shifter (345) may have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, or about 40 nm or less, or about 30 nm or less, thereby further improving the color purity and color reproducibility of the color displayed by the display device (1). In addition, the light emitted by the first wavelength shifter (345) may be emitted in multiple directions regardless of the incident direction of the incident light. This can improve the lateral visibility of the first color displayed in the first light-emitting area (TA1).

[0229] Some of the emitted light (LE) provided by the first light-emitting element (ED1) may be emitted by passing through the first wavelength conversion pattern (340) without being converted into red light by the first wavelength shifter (345). The component of the emitted light (LE) that is not converted by the first wavelength conversion pattern (340) and is incident on the first color filter (231) may be blocked by the first color filter (231). On the other hand, the red light among the emitted light (LE) that is converted by the first wavelength conversion pattern (340) passes through the first color filter (231) and is emitted to the outside. That is, the first light (L1) emitted to the outside of the display device (1) through the first light-emitting area (TA1) may be red light.

[0230] The first scatterer (343) may have a different refractive index from the first base resin (341) and may form an optical interface with the first base resin (341). For example, the first scatterer (343) may be a light scatterer. A detailed description of the first scatterer (343) is omitted as it is substantially the same or similar as the description of the third scatterer (333).

[0231] The second wavelength conversion pattern (350) may be located within the space partitioned by the bank pattern (370) in the second light-emitting area (TA2).

[0232] In some embodiments, the second wavelength conversion pattern (350) may be formed in the form of an island pattern as shown in FIG. 19.

[0233] The second wavelength conversion pattern (350) can convert or shift the peak wavelength of the incident light into light of another specific peak wavelength and emit it. The wavelength conversion or shift of the second wavelength conversion pattern (350) can be achieved through the second wavelength shifter (355) described later. In some embodiments, the second wavelength conversion pattern (350) can convert the emitted light (LE) provided by the second light-emitting element (ED2) into green light in the range of about 510 nm to about 550 nm and emit it.

[0234] In some embodiments, the second wavelength conversion pattern (350) may include a second base resin (351) and a second wavelength shifter (355) dispersed within the second base resin (351), and may further include a second scatterer (353) dispersed within the second base resin (351).

[0235] The second base resin (351) may be made of a material with high light transmittance. In some embodiments, the second base resin (351) may be made of an organic material. In some embodiments, the second base resin (351) may be made of the same material as the third base resin (331) or may include at least one of the materials exemplified as constituent materials of the third base resin (331).

[0236] Examples of the second wavelength shifter (355) include quantum dots, quantum rods, or phosphors. A more detailed description of the second wavelength shifter (355) is omitted as it is substantially the same or similar as described above in the description of the first wavelength shifter (345).

[0237] In some embodiments, the first wavelength shifter (345) and the second wavelength shifter (355) may both be composed of quantum dots. In this case, the particle size of the quantum dots forming the second wavelength shifter (355) may be smaller than the particle size of the quantum dots forming the first wavelength shifter (345).

[0238] The second scatterer (353) may have a different refractive index from the second base resin (351) and may form an optical interface with the second base resin (351). For example, the second scatterer (353) may be a light scatterer. A detailed description of the second scatterer (353) is omitted as it is substantially the same or similar as the description of the first scatterer (343).

[0239] The second wavelength conversion pattern (350) may be provided with emitted light (LE) emitted from the third light-emitting element (ED3), and the second wavelength shifter (355) may convert the emitted light (LE) provided from the third light-emitting element (ED3) into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit it.

[0240] Some of the emitted light (LE), which is blue light, may pass through the second wavelength conversion pattern (350) without being converted into green light by the second wavelength shifter (355), and this may be blocked by the second color filter (233). On the other hand, the green light among the emitted light (LE) that is converted by the second wavelength conversion pattern (350) passes through the second color filter (233) and is emitted to the outside. Accordingly, the second light (L2) emitted to the outside of the display device (1) from the second light-emitting area (TA2) may be green light.

[0241] The thickness (t1) of the wavelength conversion pattern (340, 350) and the light conversion pattern (330) according to one embodiment may be about 8 μm to about 12 μm.

[0242] Meanwhile, in order to improve the light conversion efficiency of the wavelength conversion patterns (340, 350) of the display device (1), the light conversion efficiency is defined. The light conversion efficiency of the wavelength conversion patterns (340, 350) can be calculated by considering the light absorption rate (or absorbance) of the wavelength shifters (345, 355) within the wavelength conversion patterns (340, 350) (wherein the light is the third color emitted light (LE) emitted from each light emission region (LA1, LA2), and some of the light that has been converted in wavelength through the wavelength shifters (345, 355), the quantum yield of the wavelength shifters (345, 355), and the extraction efficiency of the light converted in wavelength through the wavelength shifters (345, 355). Some of the light that is wavelength-converted through the wavelength shifter (345, 355) refers to light that is reabsorbed by the wavelength shifter (345, 355) and has a wavelength in the absorption wavelength range of the wavelength shifter (345, 355). The extraction efficiency of the light that is wavelength-converted through the wavelength shifter (345, 355) refers to the ratio of light that is emitted outward through the light transmission region (TA1, TA2) among the light that is wavelength-converted through the wavelength shifter (345, 355).

[0243] Among the factors involved in the light conversion efficiency of the wavelength conversion patterns (340, 350), the quantum yield of the wavelength shifters (345, 355) is the material intrinsic characteristic of the wavelength shifters (345, 355) (e.g., if the wavelength shifters (345, 355) contain InP, the quantum yield is 90% or more), and since the extraction efficiency of the light converted through the wavelength shifters (345, 355) is determined by the structure of the substrate (30) including the light-emitting element, in order to improve the light conversion efficiency of the wavelength conversion patterns (340, 350) of the display device (1) according to the present specification, the light absorption rate of the wavelength shifters (345, 355) within the wavelength conversion patterns (340, 350) must be taken into account.

[0244] As one method to improve the light absorption rate of the wavelength shifters (345, 355) within the wavelength conversion pattern (340, 350), one can consider increasing the thickness (t1) of the wavelength conversion pattern (340, 350) and increasing the number of wavelength shifters (345, 355) within the wavelength conversion pattern (340, 350). However, if the thickness (t1) of the wavelength conversion pattern (340, 350) is increased, it is difficult to form an appropriate taper during the manufacturing process of the wavelength conversion pattern (340, 350), which has the disadvantage that it is difficult to achieve high resolution. Even if the thickness (t1) of the wavelength conversion pattern (340, 350) is increased and the number of wavelength shifters (345, 355) is increased so that the absorbance of the wavelength shifters (345, 355) increases, the thickness of the adjacent bank pattern (370) is also increased by the same amount as the thickness (t1) of the wavelength conversion pattern (340, 350). Therefore, the light (L1, L2) that has been wavelength-converted by the wavelength shifters (345, 355) is absorbed by the adjacent bank pattern (370), so there is a limit to increasing the overall light conversion efficiency.

[0245] Another method to improve the light absorption rate of the wavelength shifters (345, 355) within the wavelength conversion pattern (340, 350) may be to consider increasing the density (or content) of the scatterers (343, 353) within the wavelength conversion pattern (340, 350). If the density (or content) of the scatterers (343, 353) within the wavelength conversion pattern (340, 350) is increased, the scatterers (343, 353) scatter the third light that the wavelength shifters (345, 355) have not absorbed, thereby increasing the light absorption rate of the wavelength shifters (345, 355); however, if the density (or content) of the scatterers (343, 353) within the wavelength conversion pattern (340, 350) exceeds a certain level, a phenomenon of reduced dispersion among each scatterer (343, 353) may occur. The above phenomenon of reduced dispersion may include creaming to the upper part of the wavelength conversion pattern (340, 350) between each scatterer (343, 353), sedimentation to the lower part of the wavelength conversion pattern (340, 350), flocculation between each scatterer (343, 353), coalescence, etc.

[0246] Therefore, even if the density (or content) of the scatterer (343, 353) within the wavelength conversion pattern (340, 350) is increased, an appropriate content of the scatterer (343, 353) must be designed to maximize the light scattering effect while minimizing the aforementioned phenomenon of reduced dispersion.

[0247] A capping layer (393) may be positioned on the bank pattern (370), the light transmission pattern (330), the first wavelength conversion pattern (340), and the second wavelength conversion pattern (350). The capping layer (393) may cover the light transmission pattern (330), the first wavelength conversion pattern (340), and the second wavelength conversion pattern (350). In some embodiments, the capping layer (393) may also be positioned in the non-display area (NDA). In the non-display area (NDA of FIG. 1), the capping layer (393) may be in direct contact with the low-refractive index layer (391) and may seal the light transmission pattern (330), the first wavelength conversion pattern (340), and the second wavelength conversion pattern (350). Accordingly, it is possible to prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the light transmission pattern (330), the first wavelength conversion pattern (340), and the second wavelength conversion pattern (350).

[0248] In some embodiments, the capping layer (393) may wrap the outer surface of the bank pattern (370) in the non-display area (NDA). Additionally, the capping layer (393) may be in direct contact with the low-refractive capping layer (392) in the non-display area (NDA).

[0249] In some embodiments, the capping layer (393) may be made of an inorganic material. In some embodiments, the capping layer (393) may be made of the same material as the low-refractive layer (391) or may include at least one of the materials mentioned in the description of the low-refractive layer (391). When both the low-refractive layer (391) and the capping layer (393) are made of inorganic material, the low-refractive layer (391) and the capping layer (393) may come into direct contact with each other in the non-display area (NDA) to form an inorganic-inorganic bond.

[0250] As described above, a sealing member (50) may be located between the color conversion substrate (30) and the display substrate (10) in the non-display area (NDA).

[0251] The sealing member (50) may overlap with the encapsulating layer (170). More specifically, the sealing member (50) may overlap with the lower inorganic layer (171) and the upper inorganic layer (175) and not overlap with the organic layer (173). In some embodiments, the sealing member (50) may be in direct contact with the encapsulating layer (170). More specifically, the sealing member (50) may be located directly above the upper inorganic layer (175) and may be in direct contact with the upper inorganic layer (175).

[0252] In some embodiments, the upper inorganic layer (175) and the lower inorganic layer (171) located below the sealing member (50) may extend to the outside of the sealing member (50).

[0253] The sealing member (50) may overlap with the color pattern (250), the first color filter (231), and the bank pattern (370) in the non-display area (NDA). In some embodiments, the sealing member (50) may be in direct contact with the capping layer (393) covering the bank pattern (370).

[0254] The sealing member (50) may overlap with the first gate metal (WR1), which includes wiring connected to the connection pad (PD). As the sealing member (50) is positioned to overlap with the first gate metal (WR1), the width of the non-display area (NDA) can be reduced.

[0255] As described above, a filler (70) may be located in the space between the color conversion substrate (30), the display substrate (10), and the sealing member (50). In some embodiments, the filler (70) may be in direct contact with the upper inorganic layer (175) of the capping layer (393) and the encapsulation layer (170), as shown in FIG. 8 and FIG. 11.

[0256] Hereinafter, in addition to FIGS. 1 to 15, FIGS. 16 to 24 further refer to the content (%) of wavelength shifters (345, 355) and the content (%) of scatterers (343, 353) for improving the light conversion efficiency of wavelength conversion patterns (340, 350) of a display device (1), and will be described in detail.

[0257] FIG. 16 is a graph showing the relative external quantum efficiency (EQE) according to the content of the second wavelength shifter for each thickness of the second wavelength conversion pattern. FIG. 17 is a graph showing the relative external quantum efficiency (EQE) according to the content of the third scatterer for each thickness of the second wavelength conversion pattern. FIG. 18 is a graph showing the viscosity of the second wavelength conversion pattern material during the inkjet printing process according to the content of the second wavelength shifter of the second wavelength conversion pattern. FIG. 19 is a graph showing the relative external quantum efficiency (EQE) according to the content of the first wavelength shifter for each thickness of the first wavelength conversion pattern. FIG. 20 is a graph showing the relative external quantum efficiency (EQE) according to the content of the second scatterer for each thickness of the first wavelength conversion pattern. FIG. 21 is a graph showing the viscosity of the first wavelength conversion pattern material during the inkjet printing process according to the content of the first wavelength shifter of the first wavelength conversion pattern. FIG. 22 is a graph showing the relative external quantum efficiency (EQE) according to the thickness of the second wavelength conversion pattern. FIG. 23 is a graph showing the relative external quantum efficiency (EQE) according to the thickness of the first wavelength conversion pattern. FIG. 24 is a graph showing the transmittance (%) and WAD characteristics according to the concentration of the first scatterer of the light transmission pattern.

[0258] First, referring to FIGS. 8 and FIGS. 16, the horizontal axis of the graph in FIG. 16 represents the content (%) (or QD wt%) of the second wavelength shifter (355) of the second wavelength conversion pattern (350), and the vertical axis represents the relative external quantum efficiency (EQE). Hereinafter, the content (%) of the material (wavelength shifter (345, 355), and scatterer (333, 343, 353)) represents the weight ratio within each wavelength conversion pattern (340, 350), and said weight ratio can be measured through Inductively Coupled Plasma Mass Spectrometer (ICP-MS). Inductively Coupled Plasma Mass Spectrometer (ICP-MS) is an analytical method capable of determining the content of wavelength shifters (345, 355) and scatterers (333, 343, 353) by analyzing the content of each element within the wavelength conversion pattern (340, 350) and the light transmission pattern (330). Since this analytical method is known to those skilled in the art, a detailed description is omitted. In addition, thermogravimetric analysis (TGA) may be used. Since thermogravimetric analysis (TGA) is also known to those skilled in the art, a detailed description is omitted.

[0259] Furthermore, the external quantum efficiency (EQE) is similar in meaning to the light conversion efficiency of the wavelength conversion pattern (340, 350). In order to easily show the change in light conversion efficiency according to the changes in the graph variables, namely the thickness (t1) of the second wavelength conversion pattern (350) and the content (wt%) of the second wavelength shifter (355) in FIG. 16, it is assumed that the external quantum efficiency of the second wavelength conversion pattern (350) is 100% when the content (wt%) of the scatterer (353) is 3, the content (wt%) of the second wavelength shifter (355) is 34, and the thickness (t1) is 8 μm. The external quantum efficiency of the second wavelength conversion pattern (350) according to the changes in thickness (t1) and the content (wt%) of the second wavelength shifter (355) is expressed relatively based on the external quantum efficiency of 100%.

[0260] Likewise, in FIG. 17, it was assumed that the external quantum efficiency is 100% when the content (wt%) of the second wavelength shifter (355) is 45, the content (wt%) of the scatterer (353) is 1.5, and the thickness (t1) is 12 μm, and in FIG. 18, it was assumed that the external quantum efficiency is 100% when the content (wt%) of the scatterer (343) is 4, the content (wt%) of the first wavelength shifter (345) is 31, and the thickness (t1) is 8 μm.

[0261] In FIG. 19, it is assumed that the external quantum efficiency is 100% when the content (wt%) of the first wavelength shifter (345) is 36, the content (wt%) of the scatterer (353) is 1.0, and the thickness (t1) is 12 μm.

[0262] As confirmed in FIG. 16, it can be seen that the content (wt%) of the second wavelength shifter (355) and the light conversion efficiency are proportional. Additionally, it can be seen that the thickness (t1) of the second wavelength conversion pattern (350) and the light conversion efficiency are also proportional. According to one embodiment, the second wavelength shifter (355) may have a lower light absorption rate compared to the first wavelength shifter (345). Therefore, if the density of the second wavelength shifter (355) within the second wavelength conversion pattern (350) is increased, or if the number of second wavelength shifters (355) is increased by increasing the thickness (t1) of the second wavelength conversion pattern (350), the light conversion efficiency of the second wavelength conversion pattern (350) can be increased. Furthermore, regardless of the thickness (t1) of the second wavelength conversion pattern (350), it can be seen that the light conversion efficiency of the second wavelength shifter (355) of the second wavelength conversion pattern (350) increases rapidly when the content (wt%) of the second wavelength shifter (355) is 40 or higher. Therefore, it is preferable that the content (wt%) of the second wavelength shifter (355) be 40 or higher.

[0263] Next, referring to FIGS. 8 and FIGS. 17, the horizontal axis of FIG. 17 represents the content (TiO₂) of the second scatterer (353). 2, It represents wt%, and the vertical axis represents the relative external quantum efficiency (Relative EQE) of the second wavelength conversion pattern (350). As confirmed in FIG. 17, the content of the second scatterer (353) (TiO₂) 2, The light conversion efficiency is increased regardless of the thickness (t1) of the second wavelength conversion pattern (350) up to wt%) of 1 to 5, and the content (TiO₂) of the second scatterer (353) 2, It can be confirmed that the light conversion efficiency of the second wavelength conversion pattern (350) decreases from the range where the wt%) exceeds 5. This is because, as described above, the content (TiO₂) of the second scatterer (353) 2,In the range where the wt%) is 1 to 5, the second scatterer (353) scatters the third light (e.g., blue light) that the second wavelength shifter (355) did not absorb, thereby increasing the light absorption rate of the second wavelength shifter (355), but the content (TiO₂) of the second scatterer (353) 2, From the range where the wt%) exceeds 5, a phenomenon of reduced dispersion among the second scatterers (353) occurs, which may be attributed to a decrease in the light conversion efficiency of the second wavelength conversion pattern (350). Furthermore, as shown in FIG. 17, at each thickness (t1) (8μm, 10μm, 12μm) of the second wavelength conversion pattern (350), the increase in the relative external quantum efficiency of the second wavelength conversion pattern (350) according to the content (wt%) of the second scatterer (353) gradually decreases up to 2 to less than 3, but in the range where the content (wt%) of the second scatterer (353) is 3 or more and 5 or less, it can be seen that the increase in the relative external quantum efficiency of the second wavelength conversion pattern (350) according to the content (wt%) of the second scatterer (353) gradually increases. Accordingly, it is preferable that the content (wt%) of the second scatterer (353) of the second wavelength conversion pattern (350) is 3 to 5.

[0264] Referring to FIG. 8 and FIG. 18, the horizontal axis of FIG. 18 represents the content (G-QD, wt%) of the second wavelength shifter (355) of the second wavelength conversion pattern (350), and the vertical axis represents the viscosity (cps) of the second wavelength conversion pattern material before curing when the second wavelength conversion pattern (350) is formed through an inkjet printing process. Typically, when the second wavelength conversion pattern material is jetted through an inkjet printing process, if the viscosity (cps) of the second wavelength conversion pattern material is about 35 or higher, the high-viscosity second wavelength conversion pattern material becomes difficult to spray (or jet) from the nozzle of the printing head used in the inkjet printing process, and thus a jetting defect of the second wavelength conversion pattern material occurs. Therefore, it is preferable that the content (wt%) of the second wavelength shifter (355) according to one embodiment be about 45 or lower.

[0265] Next, the horizontal axis of the graph in FIG. 19 represents the content (%) (or QD wt%) of the first wavelength shifter (345) of the first wavelength conversion pattern (340), and the vertical axis shows the relative external quantum efficiency (EQE). In FIG. 19, the content (wt%) of the first scatterer (343) (TiO2) is fixed at 4.

[0266] As confirmed in FIG. 19, it can be seen that the content (wt%) of the first wavelength shifter (345) and the relative external quantum efficiency are proportional. Additionally, it can be seen that the thickness (t1) of the first wavelength conversion pattern (340) and the relative external quantum efficiency are also proportional. Similar to the second wavelength conversion pattern (350), if the density of the first wavelength shifter (345) within the first wavelength conversion pattern (340) is increased, or if the number of the first wavelength shifter (345) is increased by increasing the thickness (t1) of the first wavelength conversion pattern (340), the relative external quantum efficiency of the first wavelength conversion pattern (340) can be increased.

[0267] Furthermore, it is desirable to have a uniform light conversion efficiency in the thickness (t1) range (8 μm to 12 μm) of the first wavelength conversion pattern (340) while increasing the light conversion efficiency of the first wavelength conversion pattern (340), and it is desirable that the content (wt%) of the first wavelength shifter (345) taking this into consideration is 35 to 40. Here, uniform light conversion efficiency in the thickness (t1) range (8 μm to 12 μm) of the first wavelength conversion pattern (340) means that, at the content (wt%) of a specific first wavelength shifter (345), the difference between the relative external quantum efficiency according to the thickness (t1) (8 μm to 12 μm) of the first wavelength conversion pattern (340) is about 2% or less (the variation range (d1) of the relative external quantum efficiency between y2 and y1 is 2% or less).

[0268] Next, referring to FIGS. 8 and FIGS. 20, the horizontal axis of FIG. 20 represents the content (TiO₂) of the first scatterer (343). 2, It represents wt%), and the vertical axis represents the relative external quantum efficiency (Relative EQE) of the first wavelength conversion pattern (340). The content of the first wavelength shifter (345) (R-GD, wt%) is fixed at 36. As confirmed in FIG. 20, the content of the first scatterer (343) (TiO 2,It can be seen that the light conversion efficiency increases regardless of the thickness (t1) of the first wavelength conversion pattern (340) up to a wt%) of 1 to 3.5, and when the thickness (t1) of the first wavelength conversion pattern (340) is 10 μm, the relative external quantum efficiency saturates at about 4.5, and when the thickness (t1) of the first wavelength conversion pattern (340) is 8 μm, the relative external quantum efficiency saturates at about 5.0. Furthermore, it is desirable to have a uniform light conversion efficiency in the thickness (t1) range (8 μm to 12 μm) of the first wavelength conversion pattern (340) while increasing the light conversion efficiency of the first wavelength conversion pattern (340), and the content (wt%) of the first scatterer (343) of the first wavelength conversion pattern (340) satisfying this is preferably 3 to 6, more preferably 3 to 5. To explain more specifically, the range in which the variation range of relative external quantum efficiency according to the thickness (t1) of the first wavelength conversion pattern (340) can be minimized may be about 3 to 6, more preferably 3 to 5. Here, it is preferable that the variation range of relative external quantum efficiency be controlled to 5% or less (the variation range (d2) of relative external quantum efficiency between y4 and y3 is 5% or less).

[0269] Referring to FIG. 8 and FIG. 21, the horizontal axis of FIG. 21 represents the content (R-QD, wt%) of the first wavelength shifter (345) of the first wavelength conversion pattern (340), and the vertical axis represents the viscosity (cps) of the first wavelength conversion pattern material before curing when the first wavelength conversion pattern (340) is formed through an inkjet printing process. Typically, when the first wavelength conversion pattern material is jetted through an inkjet printing process, if the viscosity (cps) of the first wavelength conversion pattern material is about 28 or higher, the high-viscosity first wavelength conversion pattern material becomes difficult to spray (or jet) from the nozzle of the printing head used in the inkjet printing process, and thus a jetting defect of the first wavelength conversion pattern material occurs. Therefore, it is preferable that the content (wt%) of the first wavelength shifter (345) according to one embodiment be about 40 or lower.

[0270] Meanwhile, under conditions where the content (wt%) of the second wavelength shifter (355) is greater than the content (wt%) of the first wavelength shifter (345), the preferred content (wt%) of the first wavelength shifter (345) may be 35 to 40 or less, and the preferred content (wt%) of the second wavelength shifter (355) may be 40 to 45. The reason the content (wt%) of the second wavelength shifter (355) is greater than the content (wt%) of the first wavelength shifter (345) is that, as described above, the absorbance of the second wavelength shifter (355) for the third light is lower than the absorbance of the first wavelength shifter (345) for the third light. That is, by designing the content (wt%) of the second wavelength shifter (355) to be greater than the content (wt%) of the first wavelength shifter (345), there is an advantage that the absorbance of the second wavelength shifter (355) for the third light is lower than the absorbance of the first wavelength shifter (345) for the third light. In some embodiments, to compensate for the absorbance of the second wavelength shifter (355) for the third light being lower than the absorbance of the first wavelength shifter (345) for the third light, the ratio between the content (wt(%)) of the first wavelength shifter (345) in the first wavelength conversion pattern (340) and the content (wt(%)) of the second wavelength shifter (355) in the second wavelength conversion pattern (350) may be 1:1.1 to 1:1.3.

[0271] Next, referring to FIG. 8 and FIG. 22, the horizontal axis of FIG. 22 represents the concentration (or content, weight ratio (wt%)) of the first scatterer (333, TiO2), and the vertical axis represents the ratio (White Angle Difference, WAD characteristic) between the luminance when the angle between the line perpendicular to the display surface of the display device (1) and the incident path of white light is 0° in the third light-emitting area (TA3) and the luminance when the angle between the line perpendicular to the display surface of the display device (1) and the incident path of white light is 60°, and the transmittance (%) in the third light-emitting area (TA3).

[0272] As confirmed in FIG. 22, as the content (wt%) of the third scatterer (333) increases, it was confirmed that the ratio between the luminance when the angle between the line perpendicular to the display surface of the display device (1) and the incident path of white light is 0° and the luminance when the angle between the line perpendicular to the display surface of the display device (1) and the incident path of white light is 60° (hereinafter, the ratio of the luminance of the front side) increases, and as the content (wt%) of the third scatterer (333) increases, it was confirmed that the transmittance (%) in the third light-transmitting area (TA3) decreases. As the content (wt%) of the third scatterer (333) increases, the transmittance (%) in the third light-transmitting region (TA3) decreases, which is attributed to the fact that the transparency of the light-transmitting pattern (330) itself decreases as the content (wt%) of the third scatterer (333) within the light-transmitting pattern (330) increases, and as the content (wt%) of the third scatterer (333) increases, the increase in the front-side luminance ratio may be attributed to the fact that the degree to which the third light incident in the third light-emitting region (LA3) is scattered by the third scatterer (333) increases. In the third light-transmitting region (TA3) of the display device (1) according to one embodiment, it is preferable that the front-side luminance ratio (%) is 70 or higher, and it is preferable that the transmittance (%) in the third light-transmitting region (TA3) is 68 or higher. The content (wt%) of the third scatterer (333) satisfying this may be 4.5 to 9. In some embodiments, the ratio between the content (wt(%)) of the third scatterer (333) in the light transmission pattern (330) and the content (wt(%)) of the second scatterer (353) in the second wavelength conversion pattern (350), and the ratio between the content (wt(%)) of the third scatterer (333) in the light transmission pattern (330) and the content (wt(%)) of the first scatterer (343) in the first wavelength conversion pattern (340) may each be 1:1.2 to 1:1.7.That is, by ensuring that the ratio between the content (wt(%)) of the third scatterer (333) in the light transmission pattern (330) and the content (wt(%)) of the second scatterer (353) in the second wavelength conversion pattern (350), and the ratio between the content (wt(%)) of the third scatterer (333) in the light transmission pattern (330) and the content (wt(%)) of the first scatterer (343) in the first wavelength conversion pattern (340) are each 1:1.2 or higher, a high positive side brightness ratio (%) can be secured in the third light-transmitting area (TA3) of the display device (1), and the ratio between the content (wt(%)) of the third scatterer (333) in the light transmission pattern (330) and the content (wt(%)) of the second scatterer (353) in the second wavelength conversion pattern (350), and the third in the light transmission pattern (330) By having the ratio between the content (wt(%)) of the scatterer (333) and the content (wt(%)) of the first scatterer (343) in the first wavelength conversion pattern (340) be 1:1.7 or less, a certain amount of transmittance (%) can be secured in terms of light transmission efficiency in the third light transmission area (TA3).

[0273] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing the technical concept or essential features thereof. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

Claims

Claim 1 In a display device, the display device comprises: a substrate including a first light-emitting region, a second light-emitting region, and a third light-emitting region; a first wavelength conversion pattern overlapping with the first light-emitting region; and a second wavelength conversion pattern overlapping with the second light-emitting region. A display device comprising a light transmission pattern overlapping with the third light-emitting region, wherein the first wavelength conversion pattern includes a first wavelength shifter that converts the wavelength of the first light into the second light and a first scatterer, and the second wavelength conversion pattern includes a second wavelength shifter that converts the wavelength of the first light into the third light and a second scatterer, wherein the ratio between the content (wt(%)) of the first wavelength shifter and the content (wt(%)) of the second wavelength shifter is 1:1.1 to 1:1.3, and the ratio between the luminance when the angle between the line perpendicular to the display surface of the display device and the incident path of white light is 0° and the luminance when the angle between the line perpendicular to the display surface of the display device and the incident path of white light is 60° is 75% or more. Claim 2 A display device according to claim 1, wherein the content (wt(%)) of the second wavelength shifter is greater than the content (wt(%)) of the first wavelength shifter. Claim 3 A display device according to claim 1, wherein the absorbance of the second wavelength shifter for the third light is lower than the absorbance of the first wavelength shifter for the second light. Claim 4 A display device according to claim 1, wherein the content (wt(%)) of the second scatterer within the second wavelength conversion pattern is 3 to 5. Claim 5 A display device according to claim 4, wherein the content (wt(%)) of the first scatterer within the first wavelength conversion pattern is 3 to 6. Claim 6 A display device according to claim 1, wherein the light transmission pattern includes a third scatterer, and the content (wt(%)) of the third scatterer within the light transmission pattern is greater than the content (wt(%)) of the second scatterer within the second wavelength conversion pattern and the content (wt(%)) of the first scatterer within the first wavelength conversion pattern. Claim 7 A display device according to claim 6, wherein the content (wt(%)) of the third scatterer within the light transmission pattern is 4.5 to 9. Claim 8 A display device according to claim 6, wherein the ratio between the content (wt(%)) of the third scatterer in the light transmission pattern and the content (wt(%)) of the second scatterer in the second wavelength conversion pattern and the ratio between the content (wt(%)) of the third scatterer in the light transmission pattern and the content (wt(%)) of the first scatterer in the first wavelength conversion pattern are each 1:1.2 to 1:1.

7. Claim 9 delete Claim 10 A display device according to claim 1, wherein the thickness of the first wavelength conversion pattern and the second wavelength conversion pattern is each 8 μm to 12 μm. Claim 11 In claim 1, the content of the first wavelength shifter and the content of the second wavelength shifter are each a display device measured via inductively coupled plasma mass spectrometer (ICP-MS). Claim 12 In a display device, the display device comprises: a substrate including a first light-emitting region, a second light-emitting region, and a third light-emitting region; a first wavelength conversion pattern overlapping with the first light-emitting region; and a second wavelength conversion pattern overlapping with the second light-emitting region. A display device comprising a light transmission pattern overlapping with the third light-emitting region, wherein the first wavelength conversion pattern comprises a first wavelength shifter that converts the wavelength of the first light into the second light and a first scatterer, and the second wavelength conversion pattern comprises a second wavelength shifter that converts the wavelength of the first light into the third light and a second scatterer, wherein the content (wt(%)) of the second wavelength shifter in the second wavelength conversion pattern is 40 to 45 and the content (wt(%)) of the first wavelength shifter in the first wavelength conversion pattern is 35 to 40, and the ratio between the luminance when the angle between the line perpendicular to the display surface of the display device and the incident path of white light is 0° and the luminance when the angle between the line perpendicular to the display surface of the display device and the incident path of white light is 60° is 75% or more. Claim 13 A display device according to claim 12, wherein the content (wt(%)) of the second wavelength shifter in the second wavelength conversion pattern is greater than the content (wt(%)) of the first wavelength shifter in the first wavelength conversion pattern. Claim 14 In claim 13, a display device in which the absorbance of the second wavelength shifter for the third light is lower than the absorbance of the first wavelength shifter for the second light. Claim 15 A display device according to claim 12, wherein the content (wt(%)) of the second scatterer in the second wavelength conversion pattern is 3 to 5, and the content (wt(%)) of the first scatterer in the first wavelength conversion pattern is 3 to 6. Claim 16 A display device according to claim 12, wherein the light transmission pattern comprises a third scatterer, and the content (wt(%)) of the third scatterer within the light transmission pattern is greater than the content (wt(%)) of the second scatterer within the second wavelength conversion pattern and the content (wt(%)) of the first scatterer within the first wavelength conversion pattern. Claim 17 A display device according to claim 16, wherein the content (wt(%)) of the third scatterer within the light transmission pattern is 4.5 to 9. Claim 18 A display device according to claim 16, wherein the ratio between the content (wt(%)) of the third scatterer in the light transmission pattern and the content (wt(%)) of the second scatterer in the second wavelength conversion pattern and the ratio between the content (wt(%)) of the third scatterer in the light transmission pattern and the content (wt(%)) of the first scatterer in the first wavelength conversion pattern are each 1:1.2 to 1:1.

7. Claim 19 delete Claim 20 In claim 12, the content of the first wavelength shifter and the content of the second wavelength shifter are each a display device measured via inductively coupled plasma mass spectrometer (ICP-MS). Claim 21 In a display device, the display device comprises: a first substrate including a first surface and a second surface opposite to the first surface, wherein a first light-emitting area, a second light-emitting area, and a third light-emitting area are defined; a first wavelength conversion pattern located on the first surface of the first substrate and overlapping with the first light-emitting area; and a second wavelength conversion pattern located on the first surface of the first substrate and overlapping with the second light-emitting area. and includes a light transmission pattern located on the first surface of the first substrate and overlapping with the third light-transmitting region, wherein the first wavelength conversion pattern includes a first base resin, a first wavelength conversion pattern dispersed within the first base resin that converts the wavelength of a first light into a second light, and a first scatterer dispersed within the first base resin, wherein the second wavelength conversion pattern includes a second base resin, a second wavelength conversion pattern dispersed within the second base resin that converts the wavelength of the first light into a third light, and a second scatterer dispersed within the second base resin, wherein the light transmission pattern includes a third base resin and a third scatterer dispersed within the third base resin, wherein the thickness of the light transmission pattern is 8 μm to 12 μm, and the content (wt(%)) of the first wavelength shifter within the first wavelength conversion pattern and the second wavelength within the second wavelength conversion pattern measured by Inductively Coupled Plasma Mass Spectrometer (ICP-MS). A display device in which the ratio of the shifter content (wt(%)) is 1:1.1 to 1:1.3, and the ratio between the luminance when the angle between the line perpendicular to the display surface of the display device and the incident path of white light is 0° and the luminance when the angle between the line perpendicular to the display surface of the display device and the incident path of white light is 60° is 75% or more. Claim 22 In claim 21, a display device in which the absorbance of the second wavelength shifter for the third light is lower than the absorbance of the first wavelength shifter for the second light. Claim 23 A display device according to claim 21, wherein the content (wt(%)) of the second scatterer in the second wavelength conversion pattern is 3 to 5, and the content (wt(%)) of the first scatterer in the first wavelength conversion pattern is 3 to 6. Claim 24 A display device according to claim 21, wherein the content (wt(%)) of the third scatterer in the light transmission pattern is greater than the content (wt(%)) of the second scatterer in the second wavelength conversion pattern and the content (wt(%)) of the first scatterer in the first wavelength conversion pattern, and the content (wt(%)) of the third scatterer in the light transmission pattern is 4.5 to 9. Claim 25 A display device according to claim 23, wherein the ratio between the content (wt(%)) of the third scatterer in the light transmission pattern and the content (wt(%)) of the second scatterer in the second wavelength conversion pattern and the ratio between the content (wt(%)) of the third scatterer in the light transmission pattern and the content (wt(%)) of the first scatterer in the first wavelength conversion pattern are each 1:1.2 to 1:1.

7. Claim 26 delete

Images