Voltage-controlled oscillator having wide frequency tuning range

Abstract

The present invention relates to the technical field of radio frequency, and disclosed is a voltage-controlled oscillator having a wide frequency tuning range, solving the problem in the prior art that oscillators have a narrow and discontinuous output frequency tuning range. The voltage-controlled oscillator comprises a passive topology module, an active negative-resistance module, a frequency tuning module, and a mode switching module; the passive topology module comprises a plurality of mutually coupled inductors; the plurality of inductors are mutually coupled to provide a required impedance peak; the plurality of inductors include one figure-eight inductor coil, a first toroidal inductor coil, and a second toroidal inductor coil; the figure-eight inductor coil comprises a first inductor coil, a second inductor coil, and a common inductor coil; the frequency tuning module is used for tuning a corresponding frequency of the impedance peak; the active negative-resistance module is used for providing a signal gain for the passive topology module so as to satisfy an oscillation condition; and the mode switching module is used for switching an operating mode of the oscillator. The oscillator of the present invention has four continuous operating frequency bands, achieving a wider output frequency tuning range.

Description

A voltage-controlled oscillator with a wide frequency adjustment range

[0001] This application claims priority to Chinese Patent Application No. 202411659615.5, filed on November 19, 2024, entitled "A Voltage-Controlled Oscillator with Wide Frequency Adjustment Range", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This invention relates to the field of radio frequency technology, and more particularly to a voltage-controlled oscillator with a wide frequency adjustment range. Background Technology

[0003] In recent decades, with the rapid development of wireless communication technology, the advantages of millimeter-wave technology have become increasingly prominent, leading many domestic and international research institutions to shift their research focus to the development and application of millimeter-wave technology. As a crucial component of millimeter-wave systems, the performance of the frequency source directly determines the signal-to-noise ratio (SNR) of the transmitted signal. Among frequency sources, the voltage-controlled oscillator (VCO) is the most critical module, significantly influencing its performance. The VCO generates an oscillation signal through self-excitation, and its frequency can be adjusted by changing the control voltage. After processing, the signal is output to subsequent circuit modules for frequency conversion, making it a vital module in wireless communication systems. Currently, many systems using millimeter-wave technology operate in different frequency bands. To achieve strong frequency source compatibility and a wide range of applications, a wide output frequency range for the VCO is required. Simultaneously, another important performance indicator for VCOs is phase noise, which determines the SNR of the output signal. Therefore, research on VCOs with wide FTR (frequency adjustment range) and low phase noise has received widespread attention.

[0004] The existing implementation schemes for voltage-controlled oscillators with a wide frequency adjustment range can be summarized as follows:

[0005] The first approach involves a four-port dual-mode VCO (Voltage-Controlled Oscillator). A parallel inductor layout allows for a small inductor with a high Q value (Q, or quality factor, is an important parameter for measuring the energy loss of an inductor or resonant circuit; a higher Q value indicates lower energy loss and better performance), which is beneficial for millimeter-wave operation. By controlling the on / off state of two active negative-resistance cores, switching between two different operating modes with overlapping intervals between the two operating frequency bands achieves twice the FTR (Frequency Adjustment Range) of a single-core voltage-controlled oscillator.

[0006] The second approach involves a hybrid-coupled quad-core, quad-mode VCO with an additional capacitor. By controlling whether the additional capacitor is connected to the resonant cavity, the circuit's operating mode is altered, and this, combined with the hybrid electromagnetic coupling, achieves a four-mode voltage-controlled oscillator. The four modes are distributed across different operating frequency bands, with overlapping intervals between them, achieving a frequency response time (FTR) four times that of a single-core VCO.

[0007] The third approach is a quad-mode quad-core VCO implemented using mode segmentation technology. It generates four effective inductance values, resulting in four impedance peaks at different frequencies. The four active negative resistance cores provide sufficient gain for the passive topology, ultimately achieving four different operating frequency bands with overlapping intervals, resulting in a frequency response time (FTR) four times that of a single-core VCO.

[0008] The fourth approach: a dual-core, four-mode voltage-controlled oscillator (VCO). This consists of two figure-eight inductors, four mode switches, and four VCO units. Utilizing the two-mode characteristic of the figure-eight inductors, the first and second figure-eight inductors (without a center tap) are placed orthogonally. This results in a VCO with four operating modes occupying only a small area, each covering a different resonant frequency range. The oscillation frequencies of each mode are independent, providing a wideband clock source. This solves the problems of excessive area and power consumption associated with multiple independent VCOs. Two VCO units are connected to the two ends of each figure-eight inductor to form a dual-core structure. The resulting dual-core structure exhibits reduced phase noise compared to existing single-core structures.

[0009] The above-mentioned implementation schemes for voltage-controlled oscillators with wide frequency adjustment ranges each have some shortcomings, which are analyzed below:

[0010] The FTR (Frequency Adjustment Range) of the four-port dual-mode VCO in the first scheme is insufficient for many applications.

[0011] In the second approach, for the EM hybrid-coupled quad-mode quad-core VCO with additional capacitors, there are only two effective inductance values. The other two modes are generated by introducing additional coupling capacitor pairs. However, large coupling capacitors will introduce non-negligible parasitic capacitances, and the fact that the two modes share the same inductor will limit the design space, making it difficult to optimize both modes simultaneously.

[0012] In the third scheme, the quad-mode quad-core VCO implemented using mode segmentation technology requires four active negative resistance modules to work simultaneously, resulting in higher power consumption.

[0013] In the fourth scheme, two figure-eight inductors and four corresponding voltage-controlled oscillator units are used. However, when one of the figure-eight inductors is working, the other is not. Although the other figure-eight inductor is not working, it still affects the working figure-eight inductor, thus affecting the magnitude of the resonant frequency and the position of the resonant point. This makes it difficult to adjust the four frequency bands to form a partially overlapping continuous frequency band, meaning that the output resonance is not continuous. The operability in practical applications is poor and still needs improvement. Summary of the Invention

[0014] The purpose of this invention is to provide a voltage-controlled oscillator with a wide frequency adjustment range, which improves the frequency adjustment range and application performance of voltage-controlled oscillators.

[0015] To achieve the above objectives, the present invention provides the following technical solution:

[0016] This invention provides a voltage-controlled oscillator with a wide frequency adjustment range, comprising: a source topology module, an active negative resistance module, a frequency adjustment module, and a mode switching module;

[0017] The active negative resistance module, the frequency adjustment module, and the mode switching module are all connected to the passive topology module.

[0018] The passive topology module includes multiple inductors; the multiple inductors are used to provide a peak operating impedance when they are commonly coupled; the multiple inductors include a figure-eight inductor, a first loop inductor, and a second loop inductor; the figure-eight inductor includes a first inductor, a second inductor, and a common inductor; the first loop inductor surrounds a first portion of the figure-eight inductor to form a first nested inductor, and the second loop inductor surrounds a second portion of the figure-eight inductor to form a second nested inductor;

[0019] The frequency adjustment module is used to adjust the frequency corresponding to the peak value of the working impedance;

[0020] The active negative resistance module is used to provide signal gain to the passive topology module in order to assist the passive topology module in completing the resonance function; the mode switching module is used to select and switch multiple operating modes.

[0021] Technical Effects: Compared with the prior art, the present invention provides a voltage-controlled oscillator with a wide frequency adjustment range. The passive topology module adopts one figure-eight inductor and two toroidal inductors. The first toroidal inductor and the first part of the figure-eight inductor form a first nested inductor, and the second toroidal inductor and the first part of the figure-eight inductor form a second nested inductor. This is equivalent to the passive topology module having two oscillator cores that are coupled together and work together. With the cooperation of the active negative resistance module, the frequency adjustment module, and the mode switching module, it outputs continuous multiple operating modes with output frequencies covering different frequency bands. Attached Figure Description

[0022] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0023] Figure 1 is a schematic diagram of the circuit structure of a voltage-controlled oscillator with a wide frequency adjustment range provided in an embodiment of the present invention;

[0024] Figure 2 is one of the circuit structure schematic diagrams of a passive topology module provided in an embodiment of the present invention;

[0025] Figure 3 is a second schematic diagram of the circuit structure of a passive topology module provided in an embodiment of the present invention;

[0026] Figure 4 is a schematic diagram of the equivalent circuit of the passive topology module in Figure 2;

[0027] Figure 5 is a simulation result of the input impedance of a passive topology module provided in an embodiment of the present invention;

[0028] Figure 6 is a schematic diagram of the continuous frequency band of a passive topology module provided in an embodiment of the present invention;

[0029] Figure 7 is a schematic diagram of the structure of an active negative resistance module provided in an embodiment of the present invention;

[0030] Figure 8 is a schematic diagram of the circuit structure of the low-frequency negative resistance unit in an active negative resistance module provided in an embodiment of the present invention;

[0031] Figure 9 is a schematic diagram of the circuit structure of the high-frequency negative resistance unit in an active negative resistance module provided in an embodiment of the present invention;

[0032] Figure 10 is one of the waveform diagrams provided in an embodiment of the present invention;

[0033] Figure 11 is a second waveform diagram provided in an embodiment of the present invention;

[0034] Figure 12 is a schematic diagram of the circuit structure of a frequency adjustment module provided in an embodiment of the present invention;

[0035] Figure 13 is a schematic diagram of the circuit structure of a mode switching module provided in an embodiment of the present invention;

[0036] Figure 14 is a schematic diagram of four working modes provided in an embodiment of the present invention.

[0037] Reference numerals: 10-Passive topology module; 20-Active negative resistance module; 30-Frequency adjustment module; 40-Mode switching module; 21-Low-frequency negative resistance unit; 22-High-frequency negative resistance unit; 211-First low-frequency active core; 212-Second low-frequency active core; 221-First high-frequency active core; 222-Second high-frequency active core; 31-Variable capacitor bank; 32-CNC capacitor array. Detailed Implementation

[0038] To facilitate a clear description of the technical solutions in the embodiments of the present invention, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect. For example, the first threshold and the second threshold are merely used to distinguish different thresholds and do not limit their order. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or execution order, and that the terms "first" and "second" are not necessarily different.

[0039] It should be noted that in this invention, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this invention should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0040] In this invention, "at least one" means one or more, and "more than one" means two or more. "And / or" describes the relationship between the associated objects, indicating that three relationships can exist.

[0041] As shown in Figure 1, this embodiment of the invention provides a voltage-controlled oscillator with a wide frequency adjustment range, which may include: a passive topology module 10, an active negative resistance module 20, a frequency adjustment module 30, and a mode switching module 40.

[0042] The active negative resistance module 20, the frequency adjustment module 30, and the mode switching module 40 are all connected to the passive topology module 10.

[0043] As shown in Figure 2, the passive topology module 10 includes multiple inductors; these multiple inductors are used to provide a peak operating impedance when they are commonly coupled; the multiple inductors include a figure-eight inductor coil, a first loop inductor coil, and a second loop inductor coil; the figure-eight inductor coil includes a first inductor coil, a second inductor coil, and a common inductor coil; the first loop inductor coil surrounds a first portion of the figure-eight inductor coil to form a first nested inductor coil, and the second loop inductor coil surrounds a second portion of the figure-eight inductor coil to form a second nested inductor coil; that is, the passive topology module 10 is equivalent to a resonant cavity;

[0044] The frequency adjustment module 30 is used to adjust the frequency corresponding to the peak value of the working impedance;

[0045] The active negative resistance module 20 is used to provide signal gain to the passive topology module 10 in order to assist the passive topology module in completing the resonance function; the mode switching module 40 is used to select and switch multiple operating modes.

[0046] Specifically, the active negative resistance module includes a low-frequency negative resistance unit and a high-frequency negative resistance unit;

[0047] When the low-frequency negative resistance unit is working and the high-frequency negative resistance unit is off, the passive topology module, with the selection control of the mode switching module and the assistance of the frequency adjustment module, can achieve at least the first working mode and the second working mode.

[0048] When the low-frequency negative resistance unit is off and the high-frequency negative resistance unit is working, the passive topology module, with the selection control of the mode switching module and the assistance of the frequency adjustment module, can achieve at least the third and fourth working modes.

[0049] The first, second, third, and fourth operating modes each cover different resonant frequency ranges; among them, two adjacent operating modes have overlapping resonant frequency ranges to form a continuous frequency tuning range.

[0050] Specifically, as shown in Figure 2, the first inductor coil includes at least a first coil winding L1 and a second coil winding L2;

[0051] The second inductor coil includes at least a third coil winding L3 and a fourth coil winding L4; the common inductor coil includes at least a fifth coil winding L5; the fifth coil winding L5 is connected to the second voltage VDD;

[0052] The first end of the first coil winding L1 is connected to the first end of the third coil winding L3; the first ends of the first coil winding L1 and the first ends of the third coil winding L3 are both connected to the first end of the fifth coil winding L5.

[0053] The first end of the second coil winding L2 is connected to the first end of the fourth coil winding L4; the first ends of the second coil winding L2 and the first ends of the fourth coil winding L4 are both connected to the second end of the fifth coil winding L5.

[0054] The second end of the first coil winding L1 is the first end (SL end) of the figure-eight inductor coil;

[0055] The second end of the second coil winding L2 is the second end (SR end) of the figure-eight inductor coil;

[0056] The second end of the third coil winding L3 is the third end (PL end) of the figure-eight inductor coil;

[0057] The second end of the fourth coil winding L4 is the fourth end (PR end) of the figure-eight inductor coil;

[0058] The first toroidal inductor coil is sleeved around the first coil winding L1 and the second coil winding L2;

[0059] The second toroidal inductor coil is wrapped around the third coil winding L3 and the fourth coil winding L4;

[0060] The first toroidal inductor includes at least a sixth winding L6 and a seventh winding L7, with the first end of the sixth winding L6 and the first end of the seventh winding L7 connected together; the first ends of the sixth winding L6 and the first ends of the seventh winding L7 are both connected to a third voltage VB.

[0061] The second end of the sixth coil winding L6 is the first end (SSL end) of the first toroidal inductor coil;

[0062] The second end of the seventh coil winding L7 is the second end (SSR end) of the first toroidal inductor coil;

[0063] The second toroidal inductor includes at least an eighth winding L8 and a ninth winding L9, with the first end of the eighth winding L8 and the first end of the ninth winding L9 connected together; the first end of the eighth winding L8 and the first end of the ninth winding L9 are both connected to a third voltage VB.

[0064] The second end of the eighth coil winding L8 is the first end (PPL end) of the second toroidal coil;

[0065] The second end of the ninth coil winding L9 is the second end (PPR end) of the second toroidal coil.

[0066] As shown in Figures 2 and 3, the passive topology module 10 is connected to the active negative resistance module 20 through the SL, SR, PL, PR, SSL, SSR, PPL, and PPR terminals.

[0067] The passive topology module 10 is connected to the frequency adjustment module 30 via the SL, SR, PL, PR, SSL, SSR, PPL, and PPR terminals.

[0068] The passive topology module 10 is connected to the mode switching module 40 via the SL, SR, PL and PR terminals.

[0069] To facilitate understanding of the coupling principle of multiple inductors in a passive topology module, the following explanation is provided in conjunction with Figures 3, 4, 5, and 6.

[0070] Figure 4 is the equivalent circuit diagram of the passive topology module 10 in Figure 3. As shown in Figure 3, the figure-eight shaped inductor coil includes the upper part L S and the lower half L P The upper part L S That is, the first part mentioned above, the lower half L of the figure-eight inductor coil. P This refers to the second part mentioned above. The upper part, L... S With the first toroidal inductor L SS This forms the first nested inductor coil, with the lower half L P Second toroidal inductor L PP This forms the second nested inductor coil. Combined with the equivalent circuit diagram in Figure 4, as shown in Figure 4, the passive topology module 10 is equivalent to having two oscillator cores, where the upper part of L in Figure 4... S R S L SS and R SS Equivalent to the core of an oscillator, the lower half of L in Figure 4 P R P L PP and R PP This is equivalent to another oscillator core. Multiple inductors, i.e., the upper and lower oscillator cores, work simultaneously and are coupled to each other. With the assistance of the frequency adjustment module, they generate the input working impedance and produce the working impedance peak.

[0071] Inner ring inductor (L) S With L P Between ) and outer inductance (L PP With L SS Between the outer and inner rings of the inductance (L) P With L PP L S With L SS L P With L SS L S With L PP There are certain coupling coefficients between them, such as K1, K2, K3 and K4 in Figure 4.

[0072] Understandably, by selecting appropriate inductance values ​​for the figure-eight inductor and nested inductors, and adjusting the coupling coefficients (K1-K4) between multiple inductors to suitable values, the frequency corresponding to the peak input impedance of the passive topology module can be adjusted to the corresponding operating frequency, as shown in Figure 5. This ultimately enables the voltage-controlled oscillator to have at least four operating frequency bands with overlapping intervals (as shown in Figure 6), achieving a wider FTR (frequency range).

[0073] Technical Effect Analysis: The passive topology module in this embodiment of the invention uses one figure-eight inductor and two toroidal inductors. The first toroidal inductor and the first part of the figure-eight inductor form a first nested inductor, and the second toroidal inductor and the first part of the figure-eight inductor form a second nested inductor. This is equivalent to the passive topology module having two oscillator cores that are coupled together and work together. With the cooperation of the active negative resistance module, the frequency adjustment module, and the mode switching module, it outputs continuous multiple operating modes with output frequencies covering different frequency bands. The fourth approach mentioned in the background section uses two completely independent figure-eight inductors. In essence, even if one figure-eight inductor is energized while the other is de-energized, they will still interfere with each other. The de-energized inductor will generate induced current due to electromagnetic coupling, affecting the inductance of the energized inductor. This ultimately affects the resonant frequency and the location of the interference resonant point, making it difficult to adjust the four frequency bands to form a partially overlapping continuous band. This results in limited applicability and low operability. Conversely, in this embodiment of the invention, all inductors operate simultaneously with coupling, avoiding the shortcomings of the fourth approach in the prior art. This allows for the formation of a continuous output frequency band, making it highly applicable.

[0074] As shown in Figure 7, the active negative resistance module 20 includes a low-frequency negative resistance unit 21 and a high-frequency negative resistance unit 22.

[0075] When the low-frequency negative resistance unit 21 is working and the high-frequency negative resistance unit 22 is off, the passive topology module 10, with the selection control of the mode switching module 40 and the assistance of the frequency adjustment module 30, can achieve at least the first working mode and the second working mode.

[0076] When the low-frequency negative resistance unit 21 is off and the high-frequency negative resistance unit 22 is working, the passive topology module 10, with the selection control of the mode switching module 40 and the assistance of the frequency adjustment module 30, can achieve at least the third and fourth working modes.

[0077] As shown in Figures 5 and 6, the first operating mode, the second operating mode, the third operating mode and the fourth operating mode cover different resonant frequency ranges; among them, two consecutive operating modes have overlapping resonant frequency ranges to form a continuous frequency range.

[0078] As shown in Figure 8, the low-frequency negative resistance unit 21 includes a first low-frequency active core 211 and a second low-frequency active core 212.

[0079] As shown in Figure 8, the first low-frequency active core 211 includes a first NMOS transistor N1, a second NMOS transistor N2, a third NMOS transistor N3, a first PMOS transistor P1, and a second PMOS transistor P2;

[0080] The drain of the first NMOS transistor N1 is connected to the first terminal (SL terminal) of the figure-eight inductor; the gate of the first NMOS transistor N1 is connected to the drain of the second NMOS transistor N2; the source of the first NMOS transistor N1 is connected to the source of the first PMOS transistor P1; the drain of the first PMOS transistor P1 is connected to the drain of the third NMOS transistor N3; the gate of the first PMOS transistor P1 is connected to the first terminal (SSL terminal) of the first ring inductor; the source of the third NMOS transistor N3 is grounded; the gate of the third NMOS transistor N3 is connected to the first control voltage V. L First control voltage V L Used to control the opening and closing of the low-frequency negative resistance unit, as well as to control the power consumption adjustment of the low-frequency negative resistance unit;

[0081] The drain of the second NMOS transistor N2 is connected to the second terminal (SR terminal) of the figure-eight inductor; the gate of the second NMOS transistor N2 is connected to the drain of the first NMOS transistor N1.

[0082] The source of the second NMOS transistor N2 is connected to the source of the second PMOS transistor P2; the drain of the second PMOS transistor P2 is connected to the drain of the third NMOS transistor N3; the gate of the second PMOS transistor P2 is connected to the second end (SSR end) of the first ring inductor.

[0083] As shown in Figure 8, the second low-frequency active core 212 includes a fourth NMOS transistor N4, a fifth NMOS transistor N5, a sixth NMOS transistor N6, a third PMOS transistor P3, and a fourth PMOS transistor P4;

[0084] The drain of the fourth NMOS transistor N4 is connected to the third terminal (PL terminal) of the figure-eight inductor; the gate of the fourth NMOS transistor N4 is connected to the drain of the fifth NMOS transistor N5.

[0085] The source of the fourth NMOS transistor N4 is connected to the source of the third PMOS transistor P3; the drain of the third PMOS transistor P3 is connected to the drain of the sixth NMOS transistor N6; the gate of the third PMOS transistor P3 is connected to the first terminal (PPL terminal) of the second ring coil; the source of the sixth NMOS transistor N6 is grounded; the gate of the sixth NMOS transistor N6 is connected to the first control voltage V. L ;

[0086] The drain of the fifth NMOS transistor N5 is connected to the fourth terminal (PR terminal) of the figure-eight inductor; the gate of the fifth NMOS transistor N5 is connected to the drain of the fourth NMOS transistor N4.

[0087] The source of the fifth NMOS transistor N5 is connected to the source of the fourth PMOS transistor P4; the drain of the fourth PMOS transistor P4 is connected to the drain of the sixth NMOS transistor N6; and the gate of the second PMOS transistor P2 is connected to the second end (PPR end) of the second ring coil.

[0088] As shown in Figure 9, the high-frequency negative resistance unit 22 includes a first high-frequency active core 221 and a second high-frequency active core 222.

[0089] As shown in Figure 9, the first high-frequency active core 221 includes a seventh NMOS transistor N7, an eighth NMOS transistor N8, and a ninth NMOS transistor N9.

[0090] The drain of the seventh NMOS transistor N7 is connected to the first terminal (SL terminal) of the figure-eight inductor; the gate of the seventh NMOS transistor N7 is connected to the first terminal of the first toroidal inductor; the source of the seventh NMOS transistor N7 is connected to the drain of the ninth NMOS transistor N9; the source of the ninth NMOS transistor N9 is grounded; the gate of the ninth NMOS transistor N9 is connected to the second control voltage V. H Second control voltage V H Used to control the on and off of the high-frequency negative resistance unit, as well as to control the power consumption adjustment of the high-frequency negative resistance unit;

[0091] The drain of the eighth NMOS transistor N8 is connected to the second terminal (SR terminal) of the figure-eight inductor; the gate of the eighth NMOS transistor N8 is connected to the second terminal (SSR terminal) of the first ring inductor; the source of the eighth NMOS transistor N8 is connected to the drain of the ninth NMOS transistor N9.

[0092] As shown in Figure 9, the second high-frequency active core 222 includes the tenth NMOS transistor N10, the eleventh NMOS transistor N11, and the twelfth NMOS transistor N12;

[0093] The drain of the tenth NMOS transistor N10 is connected to the third terminal (PL terminal) of the figure-eight inductor; the gate of the tenth NMOS transistor N10 is connected to the first terminal (PPL terminal) of the second ring coil; the source of the tenth NMOS transistor N10 is connected to the drain of the twelfth NMOS transistor N12; the source of the twelfth NMOS transistor N12 is grounded; the gate of the twelfth NMOS transistor N12 is connected to the second control voltage V. H ;

[0094] The drain of the eleventh NMOS transistor N11 is connected to the fourth terminal (PR terminal) of the figure-eight inductor; the gate of the eleventh NMOS transistor N11 is connected to the second terminal (PPR terminal) of the second ring coil; and the source of the eleventh NMOS transistor N11 is connected to the drain of the twelfth NMOS transistor N12.

[0095] As shown in Figures 8 and 9, the substrates of the first PMOS transistor P1, the second PMOS transistor P2, the third PMOS transistor P3, and the fourth PMOS transistor P4 are all connected to the first bias voltage V-FDL1.

[0096] The substrates of the first NMOS transistor N1, the second NMOS transistor N2, the fourth NMOS transistor N4, and the fifth NMOS transistor N5 are all connected to the second bias voltage V-FDL2.

[0097] The substrates of the seventh NMOS transistor N7, the eighth NMOS transistor N8, the tenth NMOS transistor N10, and the eleventh NMOS transistor N11 are all connected to the third bias voltage V-FDH.

[0098] Specifically, the response speed and power consumption of the low-frequency negative resistance unit are achieved by externally adjusting the first and second bias voltages, and the response speed and power consumption of the high-frequency negative resistance unit are achieved by adjusting the third bias voltage.

[0099] Regarding the working principle of the active negative resistance module, it can be understood that the active negative resistance module 20 provides sufficient signal gain for the passive topology module 10, enabling the resonant cavity to oscillate at the frequency corresponding to the peak of the operating impedance. The tail MOS of each active core is a tail current transistor, connected to an external control voltage V. L With V H This is used to control the core's on / off state and to regulate power consumption. The bias voltage V connected to the MOSFET substrate... FDL1 V FDL2 V FDH The voltage is supplied by an external circuit, utilizing the characteristics of the FDSOI process, by adjusting the substrate voltage (V) of the MOS. FDL1 V FDL2 V FDHThe threshold voltage of the MOSFET can be changed, thereby adjusting the response speed and power consumption of the corresponding MOSFET in the active negative resistance module, and thus controlling the performance of the active negative resistance module. When the voltage-controlled oscillator is working, by switching between the low-frequency negative resistance unit and the high-frequency negative resistance unit, the voltage / current in the figure-eight inductor of the passive topology module and the first (second) toroidal inductor coil can be made to be in phase or out of phase, thereby switching the working mode of the voltage-controlled oscillator.

[0100] Regarding the working principle of the low-frequency negative resistance unit, it is understood that the low-frequency negative resistance unit in Figure 9 of this embodiment adopts a noise loop structure circuit. When the low-frequency negative resistance unit is working, the voltage phase and current direction of the figure-eight inductor coil on one side of the passive topology module are the same as those of the first (second) ring inductor coil on the same side, and their respective port voltage waveforms are shown in Figure 10. At this time, the drain of the NMOS transistor and the gate of the PMOS transistor on the same side of the low-frequency negative resistance unit (PL and PPL, PR and PPR) are in the same phase. The NMOS transistor and PMOS transistor on the same side are simultaneously turned on and off through multiple inductors in the resonant cavity. At this time, the NMOS transistor is degraded by the PMOS transistor, and only a small part of the noise current generated by the low-frequency negative resistance unit will be transmitted to the resonant cavity and disturb the waveform phase, thus improving the phase noise performance. The two oscillator cores in Figure 4 are coupled by multiple inductors in the resonant cavity and connected through a switching circuit. The mode switching module controls the upper and lower cores to oscillate in either even mode (SL and PL in phase, SR and PR in phase) or odd mode (SL and PL out of phase, SR and PR out of phase), corresponding to the two low-frequency operating bands of the voltage-controlled oscillator.

[0101] Regarding the working principle of the high-frequency negative resistance unit, it is understood that the high-frequency negative resistance unit in Figure 9 of this embodiment adopts an F-like structure circuit. In the high-frequency negative resistance unit, the working cores of the first and second high-frequency active cores are both a pair of NMOS transistors. The drain of the NMOS transistor is connected to the figure-eight inductor coil, and the gate is connected to the first (second) ring inductor coil. When the high-frequency active core is working, the voltage phase and current direction of the figure-eight inductor coil and the first (second) ring inductor coil in the passive topology module are opposite, and its port voltage waveform is shown in Figure 11. At this time, the voltage phases of the drain and gate (PL and PPL, PR and PPR) of the NMOS transistor are opposite. The two oscillator cores in Figure 4 are coupled by multiple inductors and connected by a switching circuit. The mode switching module controls the upper and lower cores to oscillate in an even mode (SL and PL in phase, SR and PR in phase) or an odd mode (SL and PL out of phase, SR and PR out of phase), which correspond to the two high-frequency operating bands of the voltage-controlled oscillator.

[0102] Technical Effect Analysis: In the fourth scheme of the existing technology, the voltage-controlled oscillator (VCO) unit, also known as the negative resistance module, includes four cores. Two low-frequency cores are implemented using a noise loop structure, consisting of a pair of cross-coupled NMOS transistors and a pair of PMOS transistors connected to their source level. The two high-frequency cores are implemented using a pair of NMOS transistors. Compared with the traditional cross-coupled structure, the noise loop structure can effectively suppress the effective noise power of the active devices. Furthermore, in this scheme, based on FDSOI technology, the substrate of the MOS transistor in the active negative resistance module is connected to the bias voltage of the external circuit. By adjusting the bias voltage of the MOS transistor substrate, the threshold voltage of the active device can be changed, thereby controlling the operating response speed and power consumption of the VCO, resulting in better performance of the VCO.

[0103] As shown in Figure 12, the frequency adjustment module 30 includes at least a variable capacitor bank 31 and a numerically controlled capacitor array 32; the numerically controlled capacitor array 32 includes multiple numerically controlled capacitors connected in parallel; the variable capacitor bank 31 and the numerically controlled capacitor array 32 are connected in parallel.

[0104] As shown in Figure 12, the variable capacitor group 31 includes a first variable capacitor C11, a second variable capacitor C22, a first capacitor C1, a second capacitor C2, a first resistor R1, and a second resistor R2.

[0105] Wherein, the first terminal of the first variable capacitor C11 is connected to the first terminal of the second variable capacitor C22; the first terminal of the first variable capacitor C11 and the first terminal of the second variable capacitor C22 are both connected to the first voltage VC.

[0106] The second terminal of the first variable capacitor C11 and the first terminal of the first resistor R1 are both connected to the first terminal of the first capacitor C1; the second terminal of the first resistor R1 is connected to the second voltage VDD; the second terminal of the first capacitor C1 is connected to the first terminal of the numerically controlled capacitor array.

[0107] The second terminal of the second variable capacitor C22 and the first terminal of the second resistor R2 are both connected to the first terminal of the second capacitor C2; the second terminal of the second resistor R2 is connected to the second voltage VDD; the second terminal of the second capacitor C2 is connected to the second terminal of the numerically controlled capacitor array.

[0108] As shown in Figure 12, each of the multiple parallel CNC capacitors includes a third capacitor C3, a fourth capacitor C4, a thirteenth NMOS transistor N13, a third resistor R3, a fourth resistor R4, and a NOT gate.

[0109] Among them, the first end of the third capacitor C3 is connected to the first end of the numerically controlled capacitor array; the second end of the third capacitor C3 and the first end of the third resistor are both connected to the source of the thirteenth NMOS transistor N13.

[0110] The drain of the thirteenth NMOS transistor N13 is connected to the first terminal of the fourth resistor R4;

[0111] The second terminal of the third resistor R3 is connected to the second terminal of the fourth resistor R4; the second terminals of the third resistor R3 and the fourth resistor R4 are both connected to the corresponding branch selection switch signal.

[0112] The drain of the thirteenth NMOS transistor N13 is also connected to the first terminal of the fourth capacitor C4, and the second terminal of the fourth capacitor C4 is connected to the second terminal of the digitally controlled capacitor array.

[0113] The gate of the thirteenth NMOS transistor is connected to the first terminal of the NAND gate, and the second terminal of the NAND gate is connected to the branch selection switch signal; the branch selection switch signal is used to control the conduction and shutdown of the branch containing a digitally controlled capacitor.

[0114] As shown in Figure 12, the branch selection switch signals are, for example, SW0 connected to the branch where the first CNC capacitor is located, and SW2 connected to the branch where the last CNC capacitor is located.

[0115] As shown in Figure 12, the frequency adjustment module consists of a variable capacitor bank and a digitally controlled capacitor array. It is connected to the two ports of each inductor in the passive topology module to change the frequency corresponding to the peak input impedance of the passive topology module. During use, changing the selection signals SW0–SW2 adjusts the size and number of the digitally controlled capacitors connected to the two ports of the passive topology module. The control voltage VC is connected to the variable capacitors; adjusting VC changes the capacitance value. Through the coordinated adjustment of the variable capacitors and the digitally controlled capacitors, the peak operating impedance of the passive topology module and its corresponding frequency can be precisely changed, thereby achieving the adjustment of the output frequency of the voltage-controlled oscillator.

[0116] Technical Effect Analysis: In the fourth solution of the prior art mentioned in the background technology, only one variable capacitor is used for frequency adjustment without adding a capacitor array. Although this can save circuit area, the adjustment accuracy is not high and the quality factor of the resonator is reduced. The embodiment of the present invention uses a frequency adjustment module composed of multiple parallel digitally controlled capacitors and variable capacitor groups, which can improve the frequency adjustment accuracy and the quality factor of the resonator, thereby improving the application performance of the voltage-controlled oscillator.

[0117] As shown in Figure 13, the mode switching module 40 includes a fifth PMOS transistor, a sixth PMOS transistor P6, a seventh PMOS transistor P7, and an eighth PMOS transistor P8.

[0118] Among them, the source of the fifth PMOS transistor P5 is connected to the source of the seventh PMOS transistor P7; the source of both the fifth PMOS transistor P5 and the source of the seventh PMOS transistor P7 are connected to the first end (SL end) of the figure-eight inductor coil.

[0119] The source of the sixth PMOS transistor P6 is connected to the source of the eighth PMOS transistor P8; the sources of both the sixth PMOS transistor P6 and the eighth PMOS transistor P8 are connected to the second terminal (SR terminal) of the figure-eight inductor.

[0120] The gate of the fifth PMOS transistor P5 is connected to the first control voltage signal (SW);

[0121] The drain of the fifth PMOS transistor P5 is connected to the drain of the sixth PMOS transistor P6; the drains of the fifth PMOS transistor P5 and the sixth PMOS transistor P6 are both connected to the third terminal (PL terminal) of the figure-eight inductor.

[0122] The drain of the seventh PMOS transistor P7 is connected to the drain of the eighth PMOS transistor P8; the drains of the seventh PMOS transistor P7 and the eighth PMOS transistor P8 are both connected to the fourth terminal (PR terminal) of the figure-eight inductor.

[0123] The gate of the eighth PMOS transistor P8 is connected to the first control voltage signal SW;

[0124] The gate of the sixth PMOS transistor P6 is connected to the gate of the seventh PMOS transistor P7; the gates of the sixth PMOS transistor P6 and the seventh PMOS transistor P7 are connected to the second control voltage signal SWb.

[0125] Regarding the working principle of the mode switching module, it is used to change the connection relationship between the upper and lower oscillator cores. The mode switching module consists of two pairs of MOS networks that are controlled to be in ON / OFF states. When the first control voltage signal SW is low and the second control voltage signal SWb is high, P5 and P8 are turned on, P6 and P7 are turned off, SL is connected to PL, and SR is connected to PR. Conversely, when the first control voltage signal SW is high and the second control voltage signal SWb is low, P5 and P8 are turned off, P6 and P7 are turned on, SL is connected to PR, and SR is connected to PL. Therefore, by changing the control voltages SW and SWb, the connection relationship between SL and PL, and SR and PR, can be changed, thereby realizing even-mode (SL and PL in phase, SR and PR in phase) or odd-mode (SL and PL out of phase, SR and PR out of phase) oscillation between the two oscillator cores. Combined with the switching between the low-frequency negative resistance unit and the high-frequency negative resistance unit, four different operating modes can be achieved. Further explanation follows.

[0126] As shown in Figure 14, the implementation of working mode 1 is achieved through the second control signal V. H The high-frequency negative resistance unit is turned off, and the first control signal V... LWhen the low-frequency negative resistance unit is turned on, the first control voltage signal SW in the mode switching module is at a low potential and the second control voltage signal SWb is at a high potential. P5 and P8 are turned on, P6 and P7 are turned off, the SL terminal is connected to the PL terminal, and the SR terminal is connected to the PR terminal, thereby causing the current I at the SL terminal to... S and the current I at the PL terminal P In phase (arrow pointing to the right), that is, the low-frequency negative resistance unit is in even mode, and the frequency output of the voltage-controlled oscillator is in the lowest frequency range.

[0127] As shown in Figure 14, the implementation of working mode 2 is achieved through the second control signal V. H The high-frequency negative resistance unit is turned off, and the first control signal V... L When the low-frequency negative resistance unit is turned on, the first control voltage signal SW in the mode switching module is at a high potential and the second control voltage signal SWb is at a low potential. P5 and P8 are turned off, P6 and P7 are turned on, the SL terminal is connected to the PR terminal, and the SR terminal is connected to the PL terminal, thereby causing the current I at the SL terminal to... S and the current I at the PL terminal P Reverse (arrows point to the left and right), meaning the low-frequency negative resistance unit is in odd-number mode, and the frequency output by the voltage-controlled oscillator is in the second-lowest frequency band.

[0128] As shown in Figure 14, the implementation of working mode 3 is achieved through the first control signal V. L The low-frequency negative resistance unit is turned off, and the second control signal V... H When the high-frequency negative resistance unit is turned on, the first control voltage signal SW in the mode switching module is at a low potential and the second control voltage signal SWb is at a high potential. P5 and P8 are turned on, P6 and P7 are turned off, the SL terminal is connected to the PL terminal, and the SR terminal is connected to the PR terminal, thereby causing the current I at the SL terminal to... S and the current I at the PL terminal P In phase (arrow pointing to the left), that is, the high-frequency negative resistance unit is in even mode, and the frequency output of the voltage-controlled oscillator is in the second-highest frequency band.

[0129] As shown in Figure 14, the implementation of working mode 3 is achieved through the first control signal V. L The low-frequency negative resistance unit is turned off, and the second control signal V... H When the high-frequency negative resistance unit is turned on, the first control voltage signal SW in the mode switching module is at a high potential and the second control voltage signal SWb is at a low potential. P5 and P8 are turned off, P6 and P7 are turned on, the SL terminal is connected to the PR terminal, and the SR terminal is connected to the PL terminal, thereby increasing the current I at the SL terminal. S and the current I at the PL terminal P In phase (one arrow points to the left and the other to the right), that is, the high-frequency negative resistance unit is in odd-number mode, and the frequency output by the voltage-controlled oscillator is in the highest frequency band.

[0130] There is an overlap between each pair of adjacent frequency bands in the four modes, so the four different frequency bands together form a wide frequency band, thereby realizing a wide frequency adjustment range of the voltage-controlled oscillator.

[0131] Compared with the four existing technologies mentioned in the background section, the voltage-controlled oscillator with a wide frequency adjustment range provided by the embodiments of the present invention has the following technical effects:

[0132] 1) Compared to existing technologies with four active negative resistance cores, this invention utilizes a switching method between low-frequency and high-frequency negative resistance units. This allows the voltage phases of the inner and outer inductors of a single core in the passive topology module to be either in-phase or out-of-phase. Combined with a mode switching module controlling the odd-even mode of the connection between the upper and lower oscillator cores of the passive topology, only two active negative resistance modules need to operate simultaneously to achieve four different operating modes. This solution reduces the power consumption of the voltage-controlled oscillator circuit. Compared to other voltage-controlled oscillators, it can improve the overall FOM (jitter and power factor) of the circuit under in-phase noise conditions.

[0133] 2) Compared with the existing technology, the embodiments of the present invention can adjust the threshold voltage of each MOS transistor in the active negative resistance module by changing the substrate bias voltage of the MOS transistor, thereby controlling the working response speed and power consumption of the voltage-controlled oscillator.

[0134] 3) Compared with the existing four-port dual-mode oscillator, the embodiments of the present invention have four different working modes, a larger FTR (frequency adjustment range), and a wider range of applications.

[0135] 4) Compared with the existing technology of EM hybrid coupling quad-mode quad-core oscillators that use additional capacitors, the embodiments of the present invention can achieve four working modes without additional capacitors, with less parasitics and more design space.

[0136] 5) Compared with the four-mode quad-core oscillator implemented by mode segmentation technology in the prior art, the embodiments of the present invention only require two active negative resistance cores to work at the same time, resulting in lower circuit power consumption and fewer mode switching switches required.

[0137] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, the disclosure, and the appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0138] Although the invention has been described in conjunction with specific features and embodiments, it is obvious that various modifications and combinations can be made therein without departing from the spirit and scope of the invention. Accordingly, this specification and drawings are merely exemplary descriptions of the invention as defined by the appended claims, and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Clearly, those skilled in the art can make various alterations and modifications to the invention without departing from its spirit and scope. Thus, if such modifications and modifications of the invention fall within the scope of the claims and their equivalents, the invention is also intended to include such modifications and modifications.

Claims

1. A voltage-controlled oscillator with a wide frequency adjustment range, characterized in that, include: Passive topology module, active negative resistance module, frequency adjustment module, and mode switching module; The active negative resistance module, the frequency adjustment module, and the mode switching module are all connected to the passive topology module. The passive topology module includes multiple inductors; the multiple inductors are used to provide a peak operating impedance when they are commonly coupled; the multiple inductors include a figure-eight inductor, a first loop inductor, and a second loop inductor; the figure-eight inductor includes a first inductor, a second inductor, and a common inductor; the first loop inductor surrounds a first portion of the figure-eight inductor to form a first nested inductor, and the second loop inductor surrounds a second portion of the figure-eight inductor to form a second nested inductor; The frequency adjustment module is used to adjust the frequency corresponding to the peak value of the working impedance; The active negative resistance module is used to provide signal gain to the passive topology module in order to assist the passive topology module in completing the resonance function; the mode switching module is used to select and switch multiple operating modes.

2. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 1, characterized in that, The active negative resistance module includes a low-frequency negative resistance unit and a high-frequency negative resistance unit; When the low-frequency negative resistance unit is working and the high-frequency negative resistance unit is off, the passive topology module, under the selection control of the mode switching module and the assistance of the frequency adjustment module, can at least achieve the first working mode and the second working mode. When the low-frequency negative resistance unit is off and the high-frequency negative resistance unit is working, the passive topology module, under the selection control of the mode switching module and the assistance of the frequency adjustment module, can achieve at least the third and fourth working modes. The first operating mode, the second operating mode, the third operating mode, and the fourth operating mode each cover different resonant frequency ranges; wherein, two adjacent operating modes have overlapping resonant frequency ranges to form a continuous frequency tuning range.

3. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 2, characterized in that, The first inductor coil includes at least a first coil winding and a second coil winding; The second inductor coil includes at least a third coil winding and a fourth coil winding; the common inductor coil includes at least a fifth coil winding; The first end of the first coil winding is connected to the first end of the third coil winding; the first ends of the first coil winding and the first ends of the third coil winding are both connected to the first end of the fifth coil winding. The first end of the second coil winding is connected to the first end of the fourth coil winding; the first ends of both the second coil winding and the fourth coil winding are connected to the second end of the fifth coil winding. The second end of the first coil winding is the first end of the figure-eight inductor coil; The second end of the second coil winding is the second end of the figure-eight inductor coil; The second end of the third coil winding is the third end of the figure-eight inductor coil; The second end of the fourth coil winding is the fourth end of the figure-eight inductor coil; The first toroidal inductor coil is sleeved around the first coil winding and the second coil winding; The second toroidal inductor coil is sleeved around the third coil winding and the fourth coil winding.

4. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 3, characterized in that, The first toroidal inductor includes at least a sixth coil winding and a seventh coil winding, wherein the first end of the sixth coil winding and the first end of the seventh coil winding are connected; The second end of the sixth coil winding is the first end of the first toroidal inductor coil; The second end of the seventh coil winding is the second end of the first toroidal inductor coil; The second toroidal inductor includes at least an eighth coil winding and a ninth coil winding, wherein the first end of the eighth coil winding and the first end of the ninth coil winding are connected. The second end of the eighth coil winding is the first end of the second ring coil; The second end of the ninth coil winding is the second end of the second toroidal coil.

5. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 4, characterized in that, The low-frequency negative resistance unit includes a first low-frequency active core and a second low-frequency active core. The first low-frequency active core includes a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a first PMOS transistor, and a second PMOS transistor. The drain of the first NMOS transistor is connected to the first end of the figure-eight inductor; the gate of the first NMOS transistor is connected to the drain of the second NMOS transistor; the source of the first NMOS transistor is connected to the source of the first PMOS transistor; the drain of the first PMOS transistor is connected to the drain of the third NMOS transistor; the gate of the first PMOS transistor is connected to the first end of the first ring inductor; the source of the third NMOS transistor is grounded; the gate of the third NMOS transistor is connected to a first control voltage; the first control voltage is used to control the turning on and off of the low-frequency negative resistance unit. The drain of the second NMOS transistor is connected to the second end of the figure-eight inductor coil; the gate of the second NMOS transistor is connected to the drain of the first NMOS transistor. The source of the second NMOS transistor is connected to the source of the second PMOS transistor; the drain of the second PMOS transistor is connected to the drain of the third NMOS transistor; the gate of the second PMOS transistor is connected to the second end of the first ring inductor. The second low-frequency active core includes a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a third PMOS transistor, and a fourth PMOS transistor; The drain of the fourth NMOS transistor is connected to the third terminal of the figure-eight inductor; the gate of the fourth NMOS transistor is connected to the drain of the fifth NMOS transistor. The source of the fourth NMOS transistor is connected to the source of the third PMOS transistor; the drain of the third PMOS transistor is connected to the drain of the sixth NMOS transistor; the gate of the third PMOS transistor is connected to the first end of the second ring coil; the source of the sixth NMOS transistor is grounded; and the gate of the sixth NMOS transistor is connected to a first control voltage. The drain of the fifth NMOS transistor is connected to the fourth terminal of the figure-eight inductor; the gate of the fifth NMOS transistor is connected to the drain of the fourth NMOS transistor. The source of the fifth NMOS transistor is connected to the source of the fourth PMOS transistor; the drain of the fourth PMOS transistor is connected to the drain of the sixth NMOS transistor; and the gate of the second PMOS transistor is connected to the second end of the second ring coil.

6. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 5, characterized in that, The high-frequency negative resistance unit includes a first high-frequency active core and a second high-frequency active core. The first high-frequency active core includes a seventh NMOS transistor, an eighth NMOS transistor, and a ninth NMOS transistor; The drain of the seventh NMOS transistor is connected to the first end of the figure-eight inductor; the gate of the seventh NMOS transistor is connected to the first end of the first ring inductor; the source of the seventh NMOS transistor is connected to the drain of the ninth NMOS transistor; the source of the ninth NMOS transistor is grounded; the gate of the ninth NMOS transistor is connected to a second control voltage; the second control voltage is used to control the turning on and off of the high-frequency negative resistance unit. The drain of the eighth NMOS transistor is connected to the second end of the figure-eight inductor; the gate of the eighth NMOS transistor is connected to the second end of the first ring inductor; and the source of the eighth NMOS transistor is connected to the drain of the ninth NMOS transistor. The second high-frequency active core includes a tenth NMOS transistor, an eleventh NMOS transistor, and a twelfth NMOS transistor; The drain of the tenth NMOS transistor is connected to the third terminal of the figure-eight inductor; the gate of the tenth NMOS transistor is connected to the first terminal of the second ring coil; the source of the tenth NMOS transistor is connected to the drain of the twelfth NMOS transistor; the source of the twelfth NMOS transistor is grounded; and the gate of the twelfth NMOS transistor is connected to the second control voltage. The drain of the eleventh NMOS transistor is connected to the fourth terminal of the figure-eight inductor; the gate of the eleventh NMOS transistor is connected to the second terminal of the second ring coil; and the source of the eleventh NMOS transistor is connected to the drain of the twelfth NMOS transistor.

7. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 6, characterized in that, The substrates of the first PMOS transistor, the second PMOS transistor, the third PMOS transistor, and the fourth PMOS transistor are all connected to a first bias voltage. The substrates of the first NMOS transistor, the second NMOS transistor, the fourth NMOS transistor, and the fifth NMOS transistor are all connected to a second bias voltage; The substrates of the seventh NMOS transistor, the eighth NMOS transistor, the tenth NMOS transistor, and the eleventh NMOS transistor are all connected to a third bias voltage. Specifically, the response speed and power consumption of the low-frequency negative resistance unit are achieved by externally adjusting the first bias voltage and the second bias voltage, and the response speed and power consumption of the high-frequency negative resistance unit are achieved by adjusting the third bias voltage.

8. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 1, characterized in that, The frequency adjustment module includes at least a variable capacitor bank and a digitally controlled capacitor array; the digitally controlled capacitor array includes multiple digitally controlled capacitors connected in parallel; the variable capacitor bank is connected in parallel with the digitally controlled capacitor array; The variable capacitor bank includes a first variable capacitor, a second variable capacitor, a first capacitor, a second capacitor, a first resistor, and a second resistor. Wherein, the first terminal of the first variable capacitor is connected to the first terminal of the second variable capacitor; both the first terminal of the first variable capacitor and the first terminal of the second variable capacitor are connected to a first voltage; The second terminal of the first variable capacitor and the first terminal of the first resistor are both connected to the first terminal of the first capacitor; the second terminal of the first resistor is connected to a second voltage; the second terminal of the first capacitor is connected to the first terminal of the numerically controlled capacitor array. The second terminal of the second variable capacitor and the first terminal of the second resistor are both connected to the first terminal of the second capacitor; the second terminal of the second resistor is connected to the second voltage; and the second terminal of the second capacitor is connected to the second terminal of the numerically controlled capacitor array.

9. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 8, characterized in that, Each of the multiple parallel digitally controlled capacitors includes a third capacitor, a fourth capacitor, a thirteenth NMOS transistor, a third resistor, a fourth resistor, and a NOT gate; Wherein, the first terminal of the third capacitor is connected to the first terminal of the numerically controlled capacitor array; the second terminal of the third capacitor and the first terminal of the third resistor are both connected to the source of the thirteenth NMOS transistor; The drain of the thirteenth NMOS transistor is connected to the first terminal of the fourth resistor; The second terminal of the third resistor is connected to the second terminal of the fourth resistor; The drain of the thirteenth NMOS transistor is also connected to the first terminal of the fourth capacitor, and the second terminal of the fourth capacitor is connected to the second terminal of the numerically controlled capacitor array. The gate of the thirteenth NMOS transistor is connected to the first terminal of the NOT gate, and the second terminal of the NOT gate is connected to the branch selection switch signal; the branch selection switch signal is used to control the conduction and shutdown of the branch where a digitally controlled capacitor is located.

10. The voltage-controlled oscillator with a wide frequency adjustment range according to claim 3, characterized in that, The mode switching module includes a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, and an eighth PMOS transistor; The source of the fifth PMOS transistor is connected to the source of the seventh PMOS transistor; the source of both the fifth PMOS transistor and the source of the seventh PMOS transistor are connected to the first end of the figure-eight inductor coil. The source of the sixth PMOS transistor is connected to the source of the eighth PMOS transistor; the source of both the sixth PMOS transistor and the source of the eighth PMOS transistor are connected to the second end of the figure-eight inductor coil. The gate of the fifth PMOS transistor is connected to the first control voltage signal; The drain of the fifth PMOS transistor is connected to the drain of the sixth PMOS transistor; the drain of the fifth PMOS transistor and the drain of the sixth PMOS transistor are both connected to the third terminal of the figure-eight inductor. The drain of the seventh PMOS transistor is connected to the drain of the eighth PMOS transistor; the drain of the seventh PMOS transistor and the drain of the eighth PMOS transistor are both connected to the fourth terminal of the figure-eight inductor. The gate of the eighth PMOS transistor is connected to the first control voltage signal. The gate of the sixth PMOS transistor is connected to the gate of the seventh PMOS transistor; the gate of the sixth PMOS transistor and the gate of the seventh PMOS transistor are connected to a second control voltage signal.

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