SiC secondary epitaxial structure

A secondary epitaxy and silicon carbide technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of crystallization quality decline, device processing technology without wet etching process, and low activation rate of implanted ions

CN101246899BActive Publication Date: 2012-02-08THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2012-02-08

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Abstract

The invention discloses a silicon carbide secondary epitaxial material structure used for the preparation of silicon carbide devices, comprising: a silicon carbide single crystal substrate, a primary homoepitaxial layer located on the surface of the substrate, and a primary homoepitaxial layer located on the surface of the primary homoepitaxial layer The secondary epitaxial layer, wherein the primary homoepitaxial layer includes a p-type silicon carbide buffer layer, an n-type silicon carbide active layer and an unintentionally doped intrinsic silicon carbide layer. Compared with the MESFET (Metal Field Effect Transistor) with a general structure, the MESFET prepared by the secondary epitaxial method has the advantages of small source-drain resistance, large ohmic contact area, and uniform electric field distribution in the working area of ​​the tube, which can improve transconductance. Increase the working voltage and power of the device. At the same time, the process of device preparation is greatly simplified and the stability of the device is guaranteed.
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Description

technical field

[0001] The invention relates to a silicon carbide secondary epitaxy structure, in particular to a silicon carbide secondary epitaxy structure which can shorten the process flow and improve the performance of silicon carbide devices. Background technique

[0002] Silicon carbide material is one of the representative materials of the third-generation semiconductor. Compared with the first-generation semiconductor element material represented by silicon and the second-generation compound semiconductor material represented by gallium arsenide, silicon carbide has a wide band gap and high critical mass. Breakdown electric field, high carrier saturation drift velocity, high thermal conductivity and other characteristics. Specifically, taking 4H-SiC as an example, at 300K (27°C), the forbidden band width of silicon carbide is 3.2eV, which is much wider than 1.12eV of silicon and 1.43eV of gallium arsenide. In this way, the operating temperature of silicon carbide m...

Examples

Embodiment Construction

[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0027] Such as Figure 1-3 As shown, the silicon carbide secondary epitaxial material structure used for the preparation of silicon carbide devices includes: a silicon carbide single crystal substrate 1, a primary homoepitaxial layer 5 formed on the surface of the silicon carbide single crystal substrate 1, and a primary homoepitaxial layer The secondary epitaxial layer 6 generated on the surface of 5, the secondary epitaxial layer 6 is formed after the primary homoepitaxial layer 5 is patterned and processed, wherein the primary homoepitaxial layer 5 includes p-type silicon carbide buffer layers 2, n Type silicon carbide active layer 3 and unintentionally doped intrinsic silicon carbide layer 4 .

[0028] The invention is applicable to the preparation of the ohmic contact of the source and drain parts of the silicon carbide MESFET device. In the specific i...