Barrier type silicon-based thin film semi-laminated solar cell

A technology of silicon-based thin film and stacked sun, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing current, difficult selection of intermediate layers, and increasing spectrum absorption

CN102157596BActive Publication Date: 2013-05-08JIANGSU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2013-05-08

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Abstract

The invention relates to a silicon-based thin film semi-laminated solar cell, in particular to a barrier type silicon-based thin film semi-laminated solar cell with different doping densities and forbidden band widths on various layers. The barrier type silicon-base thin film semi-laminated solar cell structurally comprises P2I2P1I1N1 and P1I1N1I2N2. The barrier type silicon-based thin film semi-laminated solar cell not only combines the advantages of a laminated cell and a gradually changing band gap thin film cell, but also increases the total thickness of an I layer of a solar cell relative to a PIN structure, thereby providing more places for electron-hole pair generation; the generated photon-generated carriers have enough kinetic energy to move to both anode and cathode of the solarcell by enhancing the effects of P2 and P2 and strengthening a barrier electric field positioned in I, and therefore the short-circuit current and the open-circuit voltage of the solar cell are increased; meanwhile, filling factors and conversion efficiency are greatly enhanced; in addition, matching of an intermediate layer and a buffer layer is not needed, and the excessive interfacial effect of the laminated cell can be reduced.
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Description

technical field

[0001] The invention relates to a silicon-based thin-film solar cell, in particular to a barrier-type silicon-based thin-film semi-stacked solar cell with different doping concentrations and forbidden band widths of each layer. Background technique

[0002] At present, silicon-based solar cells are mainly monocrystalline silicon, polycrystalline silicon, and thin-film silicon solar cells. Thin-film solar cells are mainly single-junction PIN structures and stacked solar cell structures. Among them, single-junction amorphous silicon cells with PIN structures Although it can absorb more solar spectrum, due to the instability of amorphous silicon, the battery has S-W effect, which limits the stability of its performance, and stacked solar cells have been greatly developed. Hydrogenated amorphous silicon cells As the top cell, the microcrystalline silicon amorphous silicon stacked cell with hydrogenated microcrystalline silicon cell as the bottom cell is a hot spo...

Examples

Embodiment Construction

[0026] 1. Structural design of solar cells

[0027] Deposition of P on a transparent glass substrate 2 I 2 P 1 I 1 N 1 and P 1 I 1 N 1 I 2 N 2 Barrier type semi-stacked thin film solar cells with structure, where P 2 I 2 P 1 I 1 N 1 and P 1 I 1 N 1 I 2 N 2 The optical bandgap Eg of each layer in the P 2 I 2 P 1 I 1 N 1 structure, P 2 The doping concentration is taken as 3.0×10 19 cm -3 , Eg=1.96eV, I 2 Eg=1.8eV, P 1 The doping concentration is 3.0×10 17 cm -3 , Eg=1.96eV, I 1 Eg=1.7eV, N 1 The doping concentration is 3.0×10 19 cm -3 , Eg=1.6eV, at P 1 I 1 N 1 I 2 N 2 structure, P 1 The doping concentration is taken as 3.0×10 19 cm -3 , Eg=1.96eV, I 1 Eg=1.8eV, N 1 The doping concentration is 3.0×10 17 cm -3 , Eg=1.75eV, I 2 Eg=1.7eV, N 2 The doping concentration is 3.0×10 19 cm -3 , Eg=1.6eV, the band gap of each layer decreases in turn, which is conducive to the full absorption of the solar spectrum, thereby improving the ...