Organic light emitting display device and photomask for manufacturing organic light emitting display device

Abstract

Disclosed are an organic light emitting display device and a photomask for manufacturing the same. The organic light emitting display device includes a switching thin film transistor (TFT) on a substrate, wherein the switching TFT is electrically connected to a scan line and a data line; a driving TFT electrically connected to the switching TFT, the driving TFT including a driving semiconductor layer; and an organic light emitting diode (OLED) electrically connected to the driving TFT, wherein the driving semiconductor layer includes a first region curved from a first direction to a second direction intersecting the first direction, a second region curved from the second direction to the first direction, and a third region connecting the first region to the second region, the third region being obtuse to each of the first region and the second region.

Description

[0001] This application is a divisional application of the invention filed on October 25, 2013, with application number 201310511378.3 and entitled "Organic Light Emitting Display Device and Photomask for Manufacturing Organic Light Emitting Display Device".

[0002] Cross-references to related applications

[0003] This application claims priority and benefit to Korean Patent Application No. 10-2013-0053393, filed on May 10, 2013, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0004] Various embodiments of the present invention relate to organic light-emitting display devices and photomasks for manufacturing organic light-emitting display devices. Background Technology

[0005] Organic light-emitting display devices include two electrodes and an organic emitting layer located between the two electrodes. Electrons from one electrode and holes from the other electrode combine in the organic emitting layer to form excitons, which emit light when they descend to a lower energy level.

[0006] This organic light-emitting display device includes multiple pixels. Each pixel includes an organic light-emitting diode (OLED), multiple thin-film transistors (TFTs), and a capacitor. The organic light-emitting diode is a self-emissive device, the multiple thin-film transistors include switching TFTs and driving TFTs, and the capacitor is used to drive the OLED.

[0007] For the gate voltage of the driving TFT, a wide driving range is desirable to allow sufficient adjustment of the amplitude of the gate voltage Vgs of the driving TFT, thereby enabling adequate gradation of the displayed color intensity. To this end, it is desirable to increase (e.g., maximize) the design of the channel length of the driving semiconductor layer. When the driving TFT is designed to have a long channel length within a limited space, it is difficult to maintain a constant channel width for the driving semiconductor layer. When the channel width of the driving semiconductor layer is not constant, a limiting problem arises where the effective channel length is shorter than the expected length (e.g., the desired length) due to the carriers moving along the shortest distance. Summary of the Invention

[0008] Various aspects of embodiments of the present invention relate to an organic light-emitting display device and a photomask for manufacturing the organic light-emitting display device, wherein the organic light-emitting display device includes a driving semiconductor layer having a substantially constant (e.g., constant) channel width.

[0009] According to one aspect of an embodiment of the present invention, an organic light-emitting display device is provided, comprising: a switching thin-film transistor (TFT) located on a substrate, wherein the switching TFT is electrically connected to a scan line and a data line; a driving TFT electrically connected to the switching TFT, the driving TFT including a driving semiconductor layer; and an organic light-emitting diode (OLED) electrically connected to the driving TFT, wherein the driving semiconductor layer includes: a first region bent from a first direction to a second direction intersecting the first direction; a second region bent from the second direction to the first direction; and a third region connecting the first region to the second region, the third region forming an obtuse angle with each of the first region and the second region.

[0010] Each of the first region and the second region may include: a fourth region extending along the first direction; a fifth region extending along the second direction; and a sixth region connecting the fourth region to the fifth region, the sixth region having curvature.

[0011] The sixth region may include an outer angle and an interior angle facing the outer angle, wherein the radius of curvature of the outer angle is greater than the radius of curvature of the interior angle.

[0012] The driving semiconductor layer may have a constant width from the first region to the third region.

[0013] The length of the first region or the length of the second region may be longer than the length of the third region.

[0014] The third region may include a linear portion.

[0015] The third region may include multiple curved sections.

[0016] The organic light-emitting display device may further include: a first dielectric layer located on the substrate to cover the driving semiconductor layer; and a capacitor located on the first dielectric layer, wherein the capacitor faces vertically toward the driving semiconductor layer.

[0017] The capacitor may further include: a first capacitor electrode located on the first dielectric layer, wherein the first capacitor electrode faces vertically toward the driving semiconductor layer; a second dielectric layer covering the first capacitor electrode; and a second capacitor electrode located on the second dielectric layer, wherein the second capacitor electrode faces vertically toward the first capacitor electrode.

[0018] The organic light-emitting display device may further include a compensation TFT configured to compensate for the threshold voltage of the driving TFT, wherein the compensation TFT is electrically connected to the driving TFT.

[0019] The organic light-emitting display device may further include a light-emitting control TFT configured to be turned on by a light-emitting control signal supplied by a light-emitting control line, wherein the light-emitting control TFT is configured to transmit a driving voltage from the driving TFT to the OLED, and the light-emitting control TFT is located between the driving TFT and the OLED.

[0020] The organic light-emitting display device may further include an operation control TFT configured to be turned on by the light-emitting control signal, wherein the operation control TFT is configured to deliver a driving voltage to the driving TFT, and the operation control TFT is located between the driving voltage line and the driving TFT.

[0021] The organic light-emitting display device may further include an initialization TFT configured to be turned on according to a previous scan signal transmitted via a previous scan line, wherein the initialization TFT is configured to transmit an initialization voltage to the driving gate electrode of the driving TFT, and the initialization TFT is located between the initialization voltage line and the driving TFT.

[0022] According to another aspect of the present invention, a photomask for manufacturing an organic light-emitting display device is provided. The photomask includes: a switching opening pattern corresponding to a switching semiconductor layer; and a driving opening pattern connected to the switching opening pattern, the driving opening pattern corresponding to a driving semiconductor layer, and the driving opening pattern including: a first opening pattern bent from a first direction to a second direction intersecting the first direction; a second opening pattern bent from the second direction to the first direction; and a third opening pattern connecting the first opening pattern to the second opening pattern, the third opening pattern forming an obtuse angle with each of the first opening pattern and the second opening pattern.

[0023] Each of the first opening pattern and the second opening pattern may include a chamfered outer corner.

[0024] Each of the first opening pattern and the second opening pattern may further include a modified pattern having an inner angle facing the outer angle, the inner angle protruding toward the outer angle.

[0025] The driving opening pattern may have a substantially constant width from the first opening pattern to the third opening pattern.

[0026] The length of the first opening pattern or the length of the second opening pattern may be longer than the length of the third opening pattern.

[0027] The third opening pattern may include a linear portion.

[0028] The third opening pattern may include multiple curved sections. Attached Figure Description

[0029] The above and other features and aspects of the present invention will become clearer from the detailed description of exemplary embodiments of the invention with reference to the accompanying drawings, in which:

[0030] Figure 1 This is an equivalent circuit diagram of a pixel of an organic light-emitting display device according to an exemplary embodiment of the present invention;

[0031] Figure 2 This is according to an exemplary embodiment of the present invention. Figure 1 Detailed plan view of the pixels of an organic light-emitting display device;

[0032] Figure 3 According to an exemplary embodiment of the present invention, along Figure 2 A cross-sectional view of the pixels cut by line III-III;

[0033] Figure 4 This is according to an exemplary embodiment of the present invention. Figure 2 The internal plan view of the box V.

[0034] Figure 5 It is used for manufacturing according to an exemplary embodiment of the present invention. Figure 4 A plan view of the photomask of an organic light-emitting display device;

[0035] Figure 6 This is a plan view of the driving semiconductor layer of an organic light-emitting display device according to another embodiment of the present invention;

[0036] Figure 7 It is used for manufacturing according to an exemplary embodiment of the present invention. Figure 6 A planar diagram of the pattern of the photomask;

[0037] Figure 8 This is a plan view of the driving semiconductor layer of an organic light-emitting display device according to another embodiment of the present invention;

[0038] Figure 9 It is used for manufacturing according to an exemplary embodiment of the present invention. Figure 8 A planar diagram of the pattern of the photomask;

[0039] Figure 10 This is a plan view of the driving semiconductor layer of an organic light-emitting display device according to another embodiment of the present invention;

[0040] Figure 11 It is used for manufacturing according to an exemplary embodiment of the present invention. Figure 10 A planar view of the patterned photomask; and

[0041] Figure 12 This is a plan view of the pattern of the drive channel region in a comparative example according to various embodiments of the present invention. Detailed Implementation

[0042] Expressions such as “at least one of” modify all elements when they follow a series of elements, rather than modifying individual elements within a series of elements.

[0043] For the sake of simplicity and clarity, this disclosure will not show or describe parts that are not related to the embodiments described in this invention. Furthermore, to more clearly illustrate certain layers and regions, the dimensions, thicknesses, and widths of the shown features will be expanded and exaggerated in the accompanying drawings.

[0044] Identical or similar parts have the same reference numerals throughout the text. The terms "first" and "second" are not used herein to limit, but rather to distinguish one part from another. Furthermore, when an element such as a membrane, region, or component is referred to as being "above" another element, it may be located directly above that other element, or it may have an intermediate element.

[0045] The embodiments of the invention will now be described in more detail with reference to the exemplary embodiments of the invention shown in the accompanying drawings.

[0046] Figure 1 This is an equivalent circuit diagram of a pixel in an organic light-emitting display device according to an embodiment of the present invention. Figure 2 According to an embodiment of the present invention Figure 1 Detailed plan view of the pixels of an organic light-emitting display device. Figure 3 According to an embodiment of the present invention, along Figure 2 A cross-sectional view of the pixels cut off by line III-III. Figure 4 According to an embodiment of the present invention Figure 2 The internal plan view of the box V.

[0047] In one embodiment, an organic light-emitting display device includes a display area on a substrate that displays an image and a peripheral area surrounding the display area. Multiple light-emitting pixels and multiple lines that apply electrical signals to drive each pixel are arranged on the display area. For example, the lines may include scan lines 121 and 122, a data line 171, and a driving voltage line 172. Scan lines 121 and 122 transmit scan signals Sn and Sn-1, data line 171 transmits data signals, and driving voltage line 172 supplies (e.g., transmits) a driving voltage ELVDD. This embodiment is not limited to this and may further include an initialization voltage line 124 and a light-emitting control line 123. The initialization voltage line 124 provides (e.g., transmits) an initialization voltage Vint, and the light-emitting control line 123 provides (e.g., transmits) a light-emitting control signal En, such as... Figure 1 As shown, each pixel is positioned at the intersection of multiple lines extending along a first direction and multiple lines extending along a second direction, wherein the second direction intersects the first direction.

[0048] Each pixel includes an organic light-emitting diode (OLED) and pixel circuitry. The OLED emits light, and the pixel circuitry receives signals from the circuitry and drives the OLED. The pixel circuitry may include at least two TFTs and at least one capacitor. This embodiment is not limited thereto; for example, the pixel circuitry may include six TFTs and one capacitor, such as... Figure 1 As shown.

[0049] The following will refer to Figures 1 to 4 An organic light-emitting display device according to an embodiment of the present invention is described.

[0050] The six TFTs include a driving TFT T1, a switching TFT T2, a compensation TFT T3, an initialization TFT T4, an operation control TFT T5, and a light emission control TFT T6.

[0051] The gate G1 of driving TFT T1 is electrically connected to terminal Cst1 of storage capacitor Cst. The source S1 of driving TFT T1 is electrically connected to driving voltage line 172 via operation control TFT T5. The drain D1 of driving TFT T1 is electrically connected to the anode of OLED via light emission control TFT T6. Driving TFT T1 receives data signal Dm according to the switching operation of switching TFT T2 and supplies driving current Id to OLED.

[0052] The gate G2 of the switching TFT T2 is electrically connected to scan line 121, the source S2 of the switching TFT T2 is electrically connected to data line 171, and the drain D2 of the switching TFT T2 is electrically connected to the source S1 of the driving TFT T1 and is electrically connected to the driving voltage line 172 via the operation control TFT T5. The switching TFT T2 is turned on according to the scan signal Sn transmitted through scan line 121 and performs a switching operation. In this switching operation, the data signal Dm transmitted to data line 171 is transmitted to the source S1 of driving TFT T1.

[0053] The gate G3 of the compensation TFT T3 is electrically connected to the scan line 121, the source S3 of the compensation TFT T3 is electrically connected to the drain D1 of the driving TFT T1, and is electrically connected to the anode of the OLED via the light-emitting control TFT T6. The drain D3 of the compensation TFT T3 is electrically connected to the terminal Cst1 of the storage capacitor Cst, the drain D4 of the initialization TFT T4, and the gate G1 of the driving TFT T1. When the compensation TFT T3 is turned on according to the scan signal Sn transmitted through the scan line 121, the compensation TFT T3 connects the gate G1 of the driving TFT T1 to the drain D1 of the driving TFT T1, thereby connecting the driving TFT T1 in a diode-like manner (e.g., element connection), and thus compensating for the threshold voltage of the driving TFT T1.

[0054] The gate G4 of the initialization TFT T4 is electrically connected to the previous scan line 122, the source S4 of the initialization TFT T4 is electrically connected to the initialization voltage line 124, and the drain D4 of the initialization TFT T4 is electrically connected to the terminal Cst1 of the storage capacitor Cst, the drain D3 of the compensation TFT T3, and the gate G1 of the driving TFT T1. The initialization TFT T4 is turned on according to the previous scan signal Sn-1 transmitted through the previous scan line 122 and performs an initialization operation. In this initialization operation, the initialization voltage Vint is transmitted to the gate G1 of the driving TFT T1, and the voltage of the gate G1 of the driving TFT T1 is initialized.

[0055] The gate G5 of the operation control TFT T5 is electrically connected to the light emission control line 123, the source S5 of the operation control TFT T5 is electrically connected to the driving voltage line 172, and the drain D5 of the operation control TFT T5 is electrically connected to the source S1 of the driving TFT T1 and the drain D2 of the switching TFT T2. The operation control TFT T5 is connected between the driving voltage line 172 and the driving TFT T1. The light emission control signal En transmitted through the light emission control line 123 is turned on by the operation control TFT T5, and the driving voltage ELVDD is transmitted to the driving TFT T1.

[0056] The gate G6 of the light-emitting control TFT T6 is electrically connected to the light-emitting control line 123. The source S6 of the light-emitting control TFT T6 is electrically connected to the drain D1 of the driving TFT T1 and the source S3 of the compensation TFT T3. The drain D6 of the light-emitting control transistor T6 is electrically connected to the anode of the OLED. The light-emitting control TFT T6 is located between the driving TFT T1 and the OLED. The light-emitting control TFT T6 is turned on by the light-emitting control signal En transmitted through the light-emitting control line 123, and transmits the driving voltage ELVDD from the driving TFT T1 to the OLED.

[0057] The operation control TFT T5 and the light emission control TFT T6 are simultaneously (e.g., synchronously) turned on according to the light emission control signal En transmitted through the light emission control line 123, the driving voltage ELVDD is transmitted to the OLED, and the driving current Id flows into the OLED.

[0058] The other terminal, Cst2, of the storage capacitor Cst is electrically connected to the driving voltage line 172, and the cathode of the OLED is electrically connected to the common voltage ELVSS. Thus, the OLED receives a driving current Id from the driving TFT T1 and emits light to display an image.

[0059] The specific operation of a pixel in an organic light-emitting display device according to an embodiment of the present invention will be described in detail below.

[0060] First, during the initialization period, a previous low-level scan signal Sn-1 is supplied through the previous scan line 122. Then, the initialization TFT T4 is turned on in response to the previous low-level scan signal Sn-1, and the initialization voltage Vint from the initialization voltage line 124 is applied to the gate G1 of the driving TFT T1 through the initialization TFT T4, and the driving TFT T1 is initialized by the initialization voltage Vint.

[0061] Subsequently, during the data programming period, a low-level scan signal Sn is supplied through scan line 121. Then, switch TFT T2 and compensation TFT T3 are turned on in response to the low-level scan signal Sn.

[0062] Thus, the driving TFT T1 is connected in diode form (e.g., element connection) through the conducting compensation TFT T3 and is forward biased.

[0063] Then, a compensation voltage Dm+Vth (where Vth is negative) obtained by subtracting the absolute value of the threshold voltage Vth of the driving TFT T1 from the data signal Dm supplied by data line 171 is applied to the gate G1 of the driving TFT T1.

[0064] The driving voltage ELVDD and the compensation voltage Dm+Vth are applied to terminals Cst1 and Cst2 of the storage capacitor Cst, respectively, and a charge corresponding to the voltage difference across the storage capacitor Cst is stored in the storage capacitor Cst. Next, the light emission control signal En supplied from the light emission control line 123 changes from high to low during the light emission period. Then, the operation control TFT T5 and the light emission control TFT T6 are turned on by the low-level light emission control signal En during the light emission period.

[0065] Then, a driving current Id is generated, corresponding to the voltage difference between the gate G1 voltage of the driving TFT T1 and the driving voltage ELVDD. This driving current Id is supplied to the OLED through the light-emitting control TFT T6. During the light-emitting period, the gate-source voltage Vgs of the driving TFT T1 is maintained at (Dm + Vth) – ELVDD through the storage capacitor Cst. According to the current-voltage relationship of the driving TFT T1, the driving current Id is proportional to the square of the value obtained by subtracting the threshold voltage Vth from the gate-source voltage Vgs; that is, Id is proportional to (Dm - ELVDD). 2 It is directly proportional. Therefore, the driving current Id is not affected by the threshold voltage Vth of the driving TFT T1.

[0066] The following will be referred to in order. Figures 2 to 4 The structure of the organic light-emitting display device is described in detail. In this example, the structure of the TFTs (specifically, the driving TFT T1 and the switching TFT T2) is described. The structures of other TFTs are not described because they are similar to the structures of the driving TFT T1 and the switching TFT T2.

[0067] Reference Figure 2 and Figure 3 A buffer layer 111 is formed on a substrate 110, which may be a dielectric substrate comprising glass, quartz, ceramic, plastic and / or the like.

[0068] In one embodiment, semiconductor layers 131a and 131b are formed on buffer layer 111. Semiconductor layers 131a and 131b are formed in various suitable bending shapes. Semiconductor layers 131a and 131b may be formed of polysilicon. Semiconductor layers 131a and 131b include a channel region located between a source region and a drain region, wherein the channel region is undoped, and the source and drain regions are doped with impurities. In this embodiment, the impurities vary depending on the type of TFT and may be N-type or P-type impurities. Semiconductor layers 131a and 131b include a driving semiconductor layer 131a formed in driving TFT T1 and a switching semiconductor layer 131b formed in switching TFT T2, the driving semiconductor layer 131a and the switching semiconductor layer 131b being electrically connected to each other.

[0069] The driving semiconductor layer 131a includes a driving channel region 131a1 and driving source regions 176a and 177a facing each other, with the driving channel region 131a1 located between the driving source regions 176a and 177a. The switching semiconductor layer 131b includes a switching source region 176b and a switching drain region 177b facing each other, with the switching channel region located between the switching source regions 176b and 177b.

[0070] Reference Figure 4 The drive channel region 131a1 includes a first region 11, a second region 12, and a third region 13. The first region 11 bends from a first direction x and extends along a second direction y intersecting the first direction x. The second region 12 bends from the second direction y and extends along the first direction x. The third region 13 connects the first region 11 to the second region 12. Therefore, the drive channel region 131a1 can be arranged in a zigzag shape and may include a curved portion.

[0071] Reference Figure 2 and Figure 3 A first dielectric layer 141 is disposed on the substrate 110 to cover semiconductor layers 131a and 131b. The first dielectric layer 141 may be a multilayer or single-layer thin film comprising inorganic and / or organic materials.

[0072] A drive gate electrode 125a is disposed on a first dielectric layer 141. A storage capacitor Cst is disposed vertically facing the drive gate electrode 125a.

[0073] The storage capacitor Cst includes a first storage aggregation plate 125a and a second storage aggregation plate 127, with a second dielectric layer 142 disposed between the first storage aggregation plate 125a and the second storage aggregation plate 127. The first storage aggregation plate 125a is the first capacitor electrode of the storage capacitor Cst, and the second storage aggregation plate 127 is the second capacitor electrode of the storage capacitor Cst. In this embodiment, the driving gate electrode 125a serves as the first storage aggregation plate 125a, the second dielectric layer 142 serves as an insulator, and the storage capacitance is determined by the charge stored in the storage capacitor Cst and the voltage between the first storage aggregation plate 125a and the second storage aggregation plate 127. In this embodiment, the first storage aggregation plate 125a faces the driving semiconductor layer 131a vertically and serves as the driving gate electrode, and the second storage aggregation plate 127 faces the first storage aggregation plate 125a vertically.

[0074] The first memory aggregation plate 125a is spaced apart from adjacent pixels and is formed in a quadrilateral shape. Furthermore, the first memory aggregation plate 125a is on the same layer as the scan line 121, the previous scan line 122, the light emission control line 123, and the switching gate electrode 125b, and is formed of the same material as them. The second memory aggregation plate 127 is electrically connected to adjacent pixels and is formed of the same material as the initialization voltage line 124, and is formed on the same layer as the initialization voltage line 124.

[0075] In order to obtain sufficient space to fabricate the storage capacitor Cst (which is reduced due to the curved portion of the driving semiconductor layer 131a), the storage capacitor Cst is formed on the driving semiconductor layer 131a (e.g., formed vertically facing), so that the storage capacity can be ensured even under the space constraints of high-resolution devices.

[0076] According to one embodiment of the present invention, a driving semiconductor layer 131a comprising multiple curved portions is formed, thus enabling the driving semiconductor layer 131a to be formed in an elongated shape within a narrow space. Therefore, since the driving channel region 131a1 of the driving semiconductor layer 131a can be formed in an elongated shape, the driving range of the gate voltage applied to the driving gate electrode 125a is increased (e.g., widened). Therefore, since the driving range of the gate voltage is wide, the level of light emitted from the OLED can be more finely controlled by changing the amplitude of the gate voltage, thereby increasing the resolution of the organic light-emitting display device and improving the display quality.

[0077] Semiconductor layers 131a and 131b, including the driving semiconductor layer 131a, are formed by a photolithography process. Specifically, a patterning semiconductor layer is formed on the entire substrate, and then a photosensitive photoresist is formed on the semiconductor layer. Next, a pattern (e.g., a predetermined pattern) is generated in the photoresist using a photomask with a desired pattern, which corresponds to the pattern exposed by the photomask. Then, the semiconductor layer is etched using the remaining photoresist pattern as a mask, thereby forming the pattern of the driving semiconductor layer 131a and the switching semiconductor layer 131b.

[0078] When the pattern has a complex shape including curved portions (such as the driving semiconductor layer 131a), it is difficult to obtain the desired pattern due to various reasons (e.g., photoresist reflow, exposure errors, and etching errors in the photolithography process). Therefore, this structure has the limitation that it is difficult to obtain a uniform final product due to process variations (e.g., process deviations) that occur in the photolithography process.

[0079] As the resolution of organic light-emitting display devices increases, the pixel width becomes narrower; therefore, the shape of the driving semiconductor layer 131a also changes to have a narrower width. For this, reference will be made to... Figure 12 The pattern of the driving channel layer in the comparative example of the embodiment is described. When the imaginary axis of the third region 3 is perpendicular to the imaginary axis of the first region 1 and the second region 2, it is like... Figure 12 As shown in the comparative example, there are the following limitations: when the drive channel region is like Figure 12 The comparison example shown has " In the case of a "shape" (e.g., S-shape), the width of the driving semiconductor layer 131a becomes uneven (e.g., narrower in one region than in others), and the length of the third region 3 becomes very short. Therefore, the contour of the channel width adjacent to the third region 3 becomes unclear. For example, the channel width at the angle where the third region 3 is electrically connected to the first region 1 and the second region 2 may be wider than the expected width (e.g., the desired width) due to photoresist reflow, exposure errors, etching errors, etc., but the channel width at the third region 3, which is a linear portion, can be made relatively narrow. Therefore, it is difficult to achieve a uniform channel width over the entire length of the driving channel region in this structure.

[0080] To address this limitation, namely, to increase (e.g., maximize) the channel length, reduce (e.g., minimize) errors caused by process variations (e.g., process deviations), and keep the channel width substantially constant (e.g., constant), one embodiment of the present invention provides the following drive channel region structure and a photomask for implementing the drive channel region structure.

[0081] Reference Figure 2 and Figure 4 As described above, according to an embodiment of the present invention, the drive channel region 131a1 includes a first region 11, a second region 12 and a third region 13. The first region 11 bends from a first direction x and extends along a second direction y that intersects the first direction x. The second region 12 bends from the second direction y and extends along the first direction x. The third region 13 connects the first region 11 to the second region 12.

[0082] One end of the first region 11 is electrically connected to the drive source region 176a, and the other end of the first region 11 is electrically connected to one end of the third region 13. The first region 11 includes a fourth region 14, a fifth region 15, and a sixth region 16. The fourth region 14 extends along a first direction x, the fifth region 15 extends along a second direction y, and the sixth region 16 connects the fourth region 14 to the fifth region 15 and has curvature. For example, the sixth region 16 is arranged between the fourth region 14 and the fifth region 15, which are arranged almost perpendicular to each other. The sixth region 16 is formed with a smooth curved surface to have curvature. Because the drive channel region 131a1 has a channel width (e.g., a predetermined channel width) wa, the sixth region 16 includes an outer angle 16a and an inner angle 16b facing the outer angle 16a. Therefore, both the outer angle 16a and the inner angle 16b are formed as curved lines with curvature.

[0083] One end of the second region 12 is electrically connected to the other end of the third region 13, and the other end of the second region 12 is electrically connected to the drive drain region 177a. Like the first region 11, the second region 12 includes a fourth region 14, a fifth region 15, and a sixth region 16. The fourth region 14 extends along a first direction x, the fifth region 15 extends along a second direction y, and the sixth region 16 connects the fourth region 14 to the fifth region 15 and has curvature. For example, the sixth region 16 is arranged between the fourth region 14 and the fifth region 15, which are arranged almost perpendicular to each other. The second region 12 has a shape obtained by rotating the first region 11 clockwise by 180 degrees. The sixth region 16 is formed with a smooth curved surface to have curvature. Because the drive channel region 131a1 has a channel width (e.g., a predetermined channel width) wa, the sixth region 16 includes an outer angle 16a and an inner angle 16b facing the outer angle 16a. Therefore, both the outer angle 16a and the inner angle 16b are formed as curved lines with curvature.

[0084] The other end of the first region 11 is electrically connected to one end of the second region 12 via the third region 13. The central axis of the first region 11 is arranged parallel to the central axis of the second region 12. Specifically, the central axis of the fifth region 15 of the first region 11 is arranged parallel to the central axis of the fifth region 15 of the second region 12.

[0085] The third region 13 is configured to form an obtuse angle with the first region 11 and also with the second region 12. The third region 13 may include a linear portion, and the central axis of the third region 13 forms an obtuse angle with the central axis of the first region 11 (e.g., with the central axis of the fifth region 15 of the first region 11). Furthermore, the central axis of the third region 13 also forms an obtuse angle with the central axis of the second region 12 (e.g., with the central axis of the fifth region 15 of the second region 12). Therefore, the third region 13 is arranged obliquely to the first direction x and the second direction y, connecting the first region 11 to the second region 12.

[0086] As in one embodiment of the invention, when the third region 13 is configured to form an obtuse angle with the first region 11 and the second region 12, process errors and process variations at the third region 13 can be reduced (e.g., process deviations and errors can be reduced) without significantly reducing the channel length, and a substantially constant (e.g., constant) channel width wa can be achieved over the entire length of the channel region.

[0087] The length of the first region 11 or the second region 12 is longer than the length of the third region 13. Because the first region 11 and the second region 12 include curved portions, the first region 11 and the second region 12 can have a longer channel length in a limited space (e.g., to form a relatively longer portion of the channel length) compared to the third region 13, which only includes linear portions.

[0088] Figure 5 This is for implementation according to an embodiment of the present invention. Figure 4 A plan view of the photomask 331a-1 for the driving semiconductor layer 131a-1. The photomask 331a-1 includes a switching aperture pattern and a driving aperture pattern, wherein the switching aperture pattern corresponds to the switching semiconductor layer 131b, and the driving aperture pattern is connected to the switching aperture pattern and corresponds to the driving semiconductor layer 131a-1. For ease of description, Figure 5 The main feature shown is the driving opening pattern.

[0089] Reference Figure 5 Photomask 331a-1 corresponds to Figure 4 The driving semiconductor layer 131a-1 also includes a first opening pattern 31, a second opening pattern 32 and a third opening pattern 33. The first opening pattern 31 bends from a first direction x and extends along a second direction y that intersects the first direction x. The second opening pattern 32 bends from the second direction y and extends along the first direction x. The third opening pattern 33 connects the first opening pattern 31 to the second opening pattern 32 and is configured to form an obtuse angle with each portion of the first opening pattern 31 and the second opening pattern 32 extending along the second direction y.

[0090] The length of the first opening pattern 31 or the second opening pattern 32 may be longer than the length of the third opening pattern 33. Because the first opening pattern 31 and the second opening pattern 32 include curved portions, the first opening pattern 31 and the second opening pattern 32 may have a longer channel length in a limited space (e.g., a relatively longer portion of the channel length) compared to the third opening pattern 33, which only includes linear portions.

[0091] Furthermore, regarding photomask 331a-1, the first to third opening patterns 31 to 33 have a substantially constant (e.g., constant) width wb for patterning, thereby forming a driving semiconductor layer 131a-1 with a substantially constant (e.g., constant) channel width wa.

[0092] exist Figure 4 In one embodiment, the channel width wa corresponding to the sixth region 16 may be implemented to be slightly wider than the channel width wa of other regions. To overcome this limitation, Figure 6 and Figure 7 The driving semiconductor layer 131a-2 and the photomask 331a-2 are shown respectively. In the driving semiconductor layer 131a-2, the correction is... Figure 4 The channel width wa of the sixth region 16 in the photomask 331a-2 corrects the outer corner 36a of the first opening pattern 31. Furthermore, Figure 8 and 9The driving semiconductor layer 131a-3 and the photomask 331a-3 are shown respectively. In the driving semiconductor layer 131a-3, the channel width at the sixth region 16 is corrected. In the photomask 331a-3, the inner corner 36b of the first opening pattern 31 is corrected.

[0093] Figure 6 This is a plan view of the driving semiconductor layer 131a-2 of an organic light-emitting display device according to another embodiment of the present invention. Figure 7 It is for manufacturing according to an embodiment of the present invention Figure 6 The planar view of the patterned photomask 331a-2.

[0094] Reference Figure 6 ,and Figure 4 Similar to the previous embodiment, the drive channel region 131a1 according to another embodiment includes a first region 11, a second region 12, and a third region 13. The first region 11 bends from a first direction x and extends along a second direction y intersecting the first direction x. The second region 12 bends from the second direction y and extends along the first direction x. The third region 13 connects the first region 11 to the second region 12 and forms an obtuse angle with each portion of the first region 11 and the second region 12 extending along the second direction y. Furthermore, each of the first region 11 and the second region 12 includes a fourth region 14, a fifth region 15, and a sixth region 16. The fourth region 14 extends along the first direction x, the fifth region 15 extends along the second direction y, and the sixth region 16 connects the fourth region 14 to the fifth region 15 and has curvature.

[0095] In this example, the sixth region 16 includes an exterior angle 16a and an interior angle 16b facing the exterior angle, with the radius of curvature of the exterior angle 16a being greater than that of the interior angle 16b. Curvature is the degree of bending of a surface or curve, and it decreases as the radius of curvature increases. Therefore, the curvature of the exterior angle 16a is less than that of the interior angle 16b. This differs from... Figure 4 Examples of implementations. When comparing Figure 4 The radius of curvature of the outer angle 16a in the embodiment is... Figure 6 When considering the radius of curvature of the outer angle 16a in the embodiment, it can be seen that... Figure 6 The outer angle 16a of the embodiment has a large radius of curvature.

[0096] Because the curvature level of the outer corner 16a of the sixth region 16 in this embodiment is relatively smaller than, for example Figure 4The bending level of the corresponding outer corner is adjusted, thus reducing process errors and variations at the sixth region 16 (e.g., reducing process deviations and errors), and enabling a substantially constant (e.g., constant) channel width wa across the entire drive channel region 131a1. Furthermore, it overcomes the limitation that the channel width at the outer corner 16a may be wider than expected due to photoresist reflow, exposure errors, etching errors, etc. at the outer corner 16a of the sixth region 16, and enables a substantially constant (e.g., constant) channel width wa across the entire length of the drive channel region 131a1.

[0097] Figure 7 An embodiment of the present invention is shown for implementation. Figure 6 The photomask 331a-2 driving the semiconductor layer 131a-2. Similar to the aforementioned embodiments, for ease of description, Figure 7 It also mainly shows the driving opening pattern.

[0098] Reference Figure 7 Photomask 331a-2 corresponds to Figure 6 The driving semiconductor layer 131a-2 includes a first opening pattern 31, a second opening pattern 32 and a third opening pattern 33. The first opening pattern 31 is bent from a first direction x and extends along a second direction y intersecting the first direction x. The second opening pattern 32 is bent from the second direction y and extends along the first direction x. The third opening pattern 33 connects the first opening pattern 31 to the second opening pattern 32 and is configured to form an obtuse angle with each portion of the first opening pattern 31 and the second opening pattern 32 extending along the second direction y.

[0099] In addition, for Figure 7 The outer corners 36a contained in each of the first opening pattern 31 and the second opening pattern 32 of the photomask 331a-2 are chamfered. Chamfering means cutting off (e.g., cutting off along the diagonal) edges or corners to change them into bevels or rounds. For example, by chamfering the outer corners 36a of the first opening pattern 31 and the second opening pattern 32, it is possible to increase... Figure 6 The radius of curvature of the outer angle 16a of the sixth region 16.

[0100] Figure 8 This is a plan view of the driving semiconductor layer 131a-3 of an organic light-emitting display device according to another embodiment of the present invention. Figure 9 It is used for manufacturing according to an embodiment of the present invention. Figure 8 The planar view of the patterned photomask 331a-3.

[0101] Reference Figure 8 ,and Figure 6Similar to the previous embodiment, according to another embodiment of the present invention, the drive channel region 131a1 includes a first region 11, a second region 12, and a third region 13. The first region 11 bends from a first direction x and extends along a second direction y intersecting the first direction x. The second region 12 bends from the second direction y and extends along the first direction x. The third region 13 connects the first region 11 to the second region 12 and forms an obtuse angle with each portion of the first region 11 and the second region 12 extending along the second direction y. Furthermore, each of the first region 11 and the second region 12 includes a fourth region 14, a fifth region 15, and a sixth region 16. The fourth region 14 extends along the first direction x, the fifth region 15 extends along the second direction y, and the sixth region 16 connects the fourth region 14 to the fifth region 15 and has curvature. Additionally, the radius of curvature of the outer angle 16a of the sixth region 16 is larger than the radius of curvature of the inner angle 16b.

[0102] In addition, according to Figure 8 In the embodiment, the radius of curvature of the interior angle 16b of the sixth region 16 is less than... Figure 6 The radius of curvature of the interior angle of the sixth region 16 in the embodiment. Therefore, Figure 8 The curvature of the interior angle 16b of the sixth region 16 in the embodiment is greater than Figure 6 The curvature of the interior angle 16b of the sixth region 16 in the embodiment.

[0103] When Figure 8 As in the embodiment, increasing the curvature of the inner corner 16b of the sixth region 16 can reduce process errors and variations at the sixth region 16 (e.g., reduce process deviations and errors), and can achieve a substantially constant (e.g., constant) channel width over the entire length of the drive channel region 131a1. Furthermore, it can solve the limitation that the channel width at the inner corner 16b becomes unclear due to photoresist reflow, exposure errors, etching errors, etc., at the inner corner 16b of the sixth region 16, exceeding the expected width (e.g., desired width), and can achieve a substantially constant (e.g., constant) channel width wa over the entire length of the drive channel region 131a1.

[0104] Figure 9 This is for implementation according to an embodiment of the present invention. Figure 8 A plan view of the photomask 331a-3 for driving semiconductor layer 131a-3. Similar to the previous embodiments, for ease of description, Figure 9 It also mainly shows the driving opening pattern.

[0105] Reference Figure 9 Photomask 331a-3 corresponds to Figure 8The driving semiconductor layer 131a-3 includes a first opening pattern 31, a second opening pattern 32, and a third opening pattern 33. The first opening pattern 31 bends from a first direction x and extends along a second direction y intersecting the first direction x. The second opening pattern 32 bends from the second direction y and extends along the first direction x. The third opening pattern 33 connects the first opening pattern 31 to the second opening pattern 32 and is configured to form an obtuse angle with each portion of the first opening pattern 31 and the second opening pattern 32 extending along the second direction y. The outer angle 36a included in each of the first opening pattern 31 and the second opening pattern 32 is chamfered.

[0106] In addition, according to Figure 9 In the embodiment, each of the first opening pattern 31 and the second opening pattern 32 in the photomask 331a-3 includes a correction pattern 35, which causes the inner angle 36b facing the outer angle 36a to protrude toward the outer angle 36a. Because the correction pattern 35 protruding toward the outer angle 36a is added to the inner angle 36b of the photomask 331a-3, the curvature of the inner angle 36b of the pattern formed by the photomask 331a-3 can be adjusted.

[0107] Figure 10 This is a plan view of the driving semiconductor layer 131a-4 of an organic light-emitting display device according to another embodiment of the present invention. Figure 11 It is used for manufacturing according to an embodiment of the present invention. Figure 10 The planar view of the patterned photomask 331a-4.

[0108] Reference Figure 10 ,and Figure 4 Similar to the embodiment, according to another embodiment, the drive channel region 131a1 includes a first region 11, a second region 12, and a third region 13. The first region 11 bends from a first direction x and extends along a second direction y intersecting the first direction x. The second region 12 bends from the second direction y and extends along the first direction x. The third region 13 connects the first region 11 to the second region 12 and forms an obtuse angle with each portion of the first region 11 and the second region 12 extending along the second direction y. Furthermore, each of the first region 11 and the second region 12 includes a fourth region 14, a fifth region 15, and a sixth region 16. The fourth region 14 extends along the first direction x, the fifth region 15 extends along the second direction y, and the sixth region 16 connects the fourth region 14 to the fifth region 15 and has curvature.

[0109] In addition, according to Figure 10 In an embodiment, in order to drive the channel region 131a1 to achieve a relatively long channel length, the third region 13 includes multiple curved portions in addition to the linear portion, as shown in the figure.

[0110] Figure 12It is a plan view based on the pattern of the drive channel region used to explain a comparative example according to an embodiment of the present invention.

[0111] Reference Figure 12 According to the comparative example, the driving channel region of the driving semiconductor layer 131a' has a design in which the imaginary axis of the third region 3 is perpendicular to the imaginary axes of the first region 1 and the second region 2. That is, because the driving channel region has… The structure is shaped like an "S" (e.g., S-shape), so the width of the driving semiconductor layer 131a' becomes uneven (e.g., narrower in one region than in others), and the length of the third region 3 becomes very short. Therefore, the contour of the channel width in the driving channel region adjacent to the third region 3 becomes unclear. For example, the channel width at the corners may be wider than expected (e.g., desired width) due to photoresist reflow, exposure errors, etching errors, etc., at the corners where the third region 3 is electrically connected to the first region 1 and the second region 2. As a linear portion, the channel width in the third region 3 can therefore be made relatively narrow. Therefore, it is difficult to achieve a uniform channel width over the entire length of the driving channel region in this structure.

[0112] According to the above Figures 4 to 9 In embodiments, a substantially constant (e.g., constant) channel width can be achieved over the entire length of the drive channel region 131a1 without loss of length of the drive channel region 131a1 due to the arrangement of the third region 13, the correction of the outer angle 16a, and the correction of the inner angle 16b. Furthermore, according to... Figure 10 and Figure 11 In some embodiments, the length of the drive channel in the drive channel region 131a1 can be increased (e.g., maximized) by adding a curved portion to the third region 13.

[0113] Although the invention has been described with reference to the exemplary embodiments described above, those skilled in the art will understand that the embodiments are not limited thereto, and that various suitable modifications and changes may be made within the concept and scope of the invention as defined by the appended claims and their equivalents.

Claims

1. An organic light-emitting display device, comprising: A switching thin-film transistor located on a substrate, wherein the switching thin-film transistor is electrically connected to a scan line and a data line; A driving thin-film transistor is electrically connected to the switching thin-film transistor, the driving thin-film transistor including a driving semiconductor layer; A storage capacitor is electrically connected to the driving thin-film transistor; as well as Organic light-emitting diodes are electrically connected to the driving thin-film transistors. The driving semiconductor layer includes a driving channel region, a driving source region, and a driving drain region. The driving channel region exists between the driving source region and the driving drain region. The drive channel region includes: The first region curves from a first direction toward a second direction that intersects with the first direction; The second region curves from the second direction toward the first direction; and A third region is used to connect the first region to the second region, the third region forming an obtuse angle with each of the first and second regions.

2. The organic light-emitting display device of claim 1, wherein the first region and the second region of the driving channel region are arranged along the length direction of the driving channel region.

3. The organic light-emitting display device of claim 1, wherein the storage capacitor is located on the driving channel region.

4. The organic light-emitting display device of claim 1, wherein each of the first region and the second region includes a curved portion.

5. The organic light-emitting display device of claim 4, wherein the curved portion has a curvature.

6. The organic light-emitting display device of claim 4, wherein the storage capacitor is located on the curved portion of the drive channel region.

7. The organic light-emitting display device of claim 1, wherein the storage capacitor faces vertically toward the driving semiconductor layer.

8. The organic light-emitting display device of claim 7, further comprising: A first dielectric layer is located on the substrate to cover the driving semiconductor layer. The storage capacitor is located on the first dielectric layer and includes: A first capacitor electrode is located on the first dielectric layer, wherein the first capacitor electrode faces the driving semiconductor layer vertically and serves as a driving gate electrode. A second dielectric layer covers the first capacitor electrode; and The second capacitor electrode is located on the second dielectric layer, wherein the second capacitor electrode faces the first capacitor electrode vertically.

9. The organic light-emitting display device of claim 4, wherein each of the first region and the second region further comprises: The fourth region extends along the first direction; and The fifth region extends along the second direction; The curved portion connects the fourth region to the fifth region.

10. The organic light-emitting display device of claim 4, wherein the curved portion includes an outer angle and an inner angle facing the outer angle, and wherein the radius of curvature of the outer angle is greater than the radius of curvature of the inner angle.

11. The organic light-emitting display device of claim 1, wherein the driving semiconductor layer has a constant width from the first region to the third region.

12. The organic light-emitting display device of claim 1, wherein the length of the first region or the length of the second region is longer than the length of the third region.

13. The organic light-emitting display device of claim 1, wherein the third region includes a linear portion.

14. The organic light-emitting display device of claim 1, wherein the third region comprises a plurality of curved portions.

15. The organic light-emitting display device of claim 1, further comprising a compensation thin-film transistor configured to compensate for a threshold voltage of the driving thin-film transistor, wherein the compensation thin-film transistor is electrically connected to the driving thin-film transistor.

16. The organic light-emitting display device of claim 1, further comprising a light-emitting control thin-film transistor, the light-emitting control thin-film transistor being configured to conduct a light-emitting control signal supplied via a light-emitting control line, wherein the light-emitting control thin-film transistor is configured to transmit a driving voltage from the driving thin-film transistor to the organic light-emitting diode, and the light-emitting control thin-film transistor is located between the driving thin-film transistor and the organic light-emitting diode.

17. The organic light-emitting display device of claim 16, further comprising an operation control thin-film transistor configured to conduct the light-emitting control signal transmitted through the light-emitting control line, wherein the operation control thin-film transistor is configured to transmit a drive voltage to the drive thin-film transistor, and the operation control thin-film transistor is located between the drive voltage line and the drive thin-film transistor.

18. The organic light-emitting display device of claim 17, further comprising an initialization thin-film transistor configured to be turned on according to a previous scan signal transmitted via a previous scan line, wherein the initialization thin-film transistor is configured to transmit an initialization voltage to the driving gate electrode of the driving thin-film transistor, and the initialization thin-film transistor is located between the initialization voltage line and the driving thin-film transistor.

19. An organic light-emitting display device, comprising: A switching thin-film transistor located on a substrate, wherein the switching thin-film transistor is electrically connected to a scan line and a data line; A driving thin-film transistor is electrically connected to the switching thin-film transistor, the driving thin-film transistor including a driving semiconductor layer; A storage capacitor is electrically connected to the driving thin-film transistor; as well as Organic light-emitting diodes are electrically connected to the driving thin-film transistors. The driving semiconductor layer includes a driving channel region, a driving source region, and a driving drain region, wherein the driving channel region exists between the driving source region and the driving drain region. The drive channel region is curved along its length and includes: The first region curves from a first direction toward a second direction that intersects with the first direction; The second region curves from the second direction toward the first direction; and A third region is used to connect the first region to the second region, the third region forming an obtuse angle with each of the first and second regions.

20. The organic light-emitting display device of claim 19, wherein at least a portion of the driving channel region has curvature.

21. The organic light-emitting display device of claim 19, wherein each of the first region and the second region includes a curved portion having curvature.

22. The organic light-emitting display device of claim 19, wherein each of the first region and the second region comprises: The fourth region extends along the first direction; The fifth region extends along the second direction; and The sixth region is used to connect the fourth region to the fifth region and has curvature.

23. The organic light-emitting display device of claim 22, wherein the sixth region includes an outer corner and an inner corner facing the outer corner, and wherein the radius of curvature of the outer corner is greater than the radius of curvature of the inner corner.

24. The organic light-emitting display device of claim 19, wherein the driving channel region has a constant width.

25. The organic light-emitting display device of claim 19, wherein the length of the first region or the length of the second region is longer than the length of the third region.

26. The organic light-emitting display device of claim 19, wherein the third region includes a linear portion.

27. The organic light-emitting display device of claim 19, wherein the third region comprises a plurality of curved portions.

28. An organic light-emitting display device, comprising: substrate; The first voltage line and the second voltage line are located on the substrate; The first scan line, the second scan line, and the light emission control line are located on the substrate; Data lines that intersect the first scan line, the second scan line, and the light emission control line; A first thin-film transistor is connected to the second scan line and the data line; The second thin-film transistor is electrically connected to the first thin-film transistor; An organic light-emitting diode is electrically connected to the first voltage line and the drain of the second thin-film transistor; The third thin-film transistor is electrically connected to the drain of the second thin-film transistor and the organic light-emitting diode, and is connected to the second scan line; A first storage capacitor is connected to the gate of the second thin-film transistor and is located between the second scan line and the light-emitting control line; A fourth thin-film transistor is connected to the second thin-film transistor and the first voltage line; A fifth thin-film transistor is connected to the second thin-film transistor and to the light-emitting control line and the organic light-emitting diode; as well as The sixth thin-film transistor is connected to the second thin-film transistor, the third thin-film transistor, the second voltage line, and the first scan line. The second thin-film transistor includes a semiconductor layer having a drive channel region disposed below the gate of the second thin-film transistor, which serves as an electrode of the first storage capacitor, and the drive channel region includes a curved portion having at least one obtuse angle. The drive channel region includes: The first region curves from a first direction toward a second direction that intersects with the first direction; The second region curves from the second direction toward the first direction; and A third region is used to connect the first region to the second region, the third region forming an obtuse angle with each of the first and second regions.

29. The organic light-emitting display device of claim 28, further comprising an insulating film covering the gate of the second thin-film transistor, and The first storage capacitor includes: The first storage aggregation plate used as the gate of the second thin-film transistor, the second storage aggregation plate on the first storage aggregation plate, and a portion of the insulating film between the first storage aggregation plate and the second storage aggregation plate.

30. The organic light-emitting display device of claim 29, wherein the semiconductor layer includes a first portion extending below the gate of the fourth thin-film transistor and a second portion extending below the gate of the fifth thin-film transistor, and the first portion and the second portion are integrally formed.

31. The organic light-emitting display device of claim 30, wherein the semiconductor layer includes a third portion extending to the lower portion of the gate of the fourth thin-film transistor, a fourth portion extending to the lower portion of the gate of the first thin-film transistor, a fifth portion extending to the lower portion of the gate of the fifth thin-film transistor, and a sixth portion extending to the lower portion of the gate of the third thin-film transistor, and The first part, the second part, the third part, the fourth part, the fifth part, and the sixth part are integrated into a single whole.

32. The organic light-emitting display device of claim 31, further comprising: The second storage capacitor is adjacent to the first storage capacitor; as well as The third storage capacitor is located on the opposite side of the second storage capacitor relative to the first storage capacitor, and The second storage aggregation plate of the first storage capacitor is connected to the electrodes of the second storage capacitor and the electrodes of the third storage capacitor.

33. The organic light-emitting display device of claim 32, wherein the portion connecting the second storage aggregation plate of the first storage capacitor, the electrode of the second storage capacitor, and the electrode of the third storage capacitor to each other is located between the second scan line and the light-emitting control line.

34. An organic light-emitting display device, comprising: substrate; The first voltage line and the second voltage line are located on the substrate; The first scan line, the second scan line, and the light emission control line are located on the substrate; Data lines that intersect the first scan line, the second scan line, and the light emission control line; A first thin-film transistor is connected to the second scan line and the data line; The second thin-film transistor is electrically connected to the first thin-film transistor; An organic light-emitting diode is electrically connected to the first voltage line and the drain of the second thin-film transistor; The third thin-film transistor is electrically connected to the drain of the second thin-film transistor and the organic light-emitting diode, and is connected to the second scan line; A first storage capacitor is connected to the gate of the second thin-film transistor and is located between the second scan line and the light-emitting control line; A fourth thin-film transistor is connected to the second thin-film transistor and the first voltage line; A fifth thin-film transistor is connected to the second thin-film transistor and to the light-emitting control line and the organic light-emitting diode; as well as The sixth thin-film transistor is connected to the second thin-film transistor, the third thin-film transistor, the second voltage line, and the first scan line. The second thin-film transistor includes a first semiconductor layer having a drive channel region, the drive channel region comprising a bent portion below the gate of the second thin-film transistor, which serves as an electrode of the first storage capacitor. The drive channel region includes: The first region curves from a first direction toward a second direction that intersects with the first direction; The second region curves from the second direction toward the first direction; and A third region is used to connect the first region to the second region, the third region forming an obtuse angle with each of the first and second regions.

35. The organic light-emitting display device of claim 34, further comprising an insulating film covering the gate of the second thin-film transistor, and The first storage capacitor includes: The first storage aggregation plate used as the gate of the second thin-film transistor, the second storage aggregation plate on the first storage aggregation plate, and a portion of the insulating film between the first storage aggregation plate and the second storage aggregation plate.

36. The organic light-emitting display device of claim 35, further comprising: A second semiconductor layer is connected to the first semiconductor layer and extends from below the gate of the first thin-film transistor to below the gate of the fourth thin-film transistor. The first semiconductor layer and the second semiconductor layer are formed as a single unit.

37. The organic light-emitting display device of claim 36, further comprising: A third semiconductor layer is connected to the first semiconductor layer and extends from below the gate of the third thin-film transistor to below the gate of the fifth thin-film transistor.

38. The organic light-emitting display device of claim 37, further comprising: The second storage capacitor is adjacent to the first storage capacitor; as well as The third storage capacitor is located on the opposite side of the second storage capacitor relative to the first storage capacitor, and The second storage aggregation plate of the first storage capacitor is connected to the electrodes of the second storage capacitor and the electrodes of the third storage capacitor.

39. The organic light-emitting display device of claim 38, wherein the portion connecting the second storage aggregation plate of the first storage capacitor, the electrode of the second storage capacitor, and the electrode of the third storage capacitor to each other is located between the second scan line and the light-emitting control line.

40. The organic light-emitting display device of claim 37, wherein both the second semiconductor layer and the third semiconductor layer extend in a direction parallel to the data line, and The curved portion of the first semiconductor layer includes a portion extending in a direction inclined relative to either the second semiconductor layer or the third semiconductor layer.

41. The organic light-emitting display device of claim 40, further comprising: The second storage capacitor is adjacent to the first storage capacitor; as well as The third storage capacitor is located on the opposite side of the second storage capacitor relative to the first storage capacitor, and The second storage aggregation plate of the first storage capacitor is connected to the electrodes of the second storage capacitor and the electrodes of the third storage capacitor.

42. The organic light-emitting display device of claim 41, wherein the portion connecting the second storage aggregation plate of the first storage capacitor, the electrode of the second storage capacitor, and the electrode of the third storage capacitor to each other is located between the second scan line and the light-emitting control line.

43. An organic light-emitting display device, comprising: The scan lines and data lines are extended to intersect each other; A switching thin-film transistor is electrically connected to the scan line and the data line; A driving thin-film transistor is electrically connected to the switching thin-film transistor; A compensation thin-film transistor is electrically connected to the driving thin-film transistor; as well as An insulating layer is disposed on the gate of the driving thin-film transistor, and The driving thin-film transistor includes a semiconductor layer having a driving channel region, the driving channel region having a curved portion, and The drive channel region includes: The first region curves from a first direction toward a second direction that intersects with the first direction; The second region curves from the second direction toward the first direction; and A third region is used to connect the first region to the second region, the third region forming an obtuse angle with each of the first and second regions.

44. The organic light-emitting display device of claim 43, wherein the semiconductor layer of the driving thin-film transistor and the semiconductor layer of the compensating thin-film transistor are connected to be formed integrally.

45. The organic light-emitting display device of claim 43, further comprising a first voltage line extending in a direction parallel to the data line, and The first voltage line bends around the contact hole between the semiconductor layer of the switching thin-film transistor and the data line.

46. ​​The organic light-emitting display device of claim 43, further comprising a storage capacitor overlapping the semiconductor layer of the driving thin-film transistor, the storage capacitor having a first storage aggregation plate and a second storage aggregation plate.

47. The organic light-emitting display device of claim 46, wherein a portion of the insulating layer is located between the first storage aggregation plate and the second storage aggregation plate.

48. The organic light-emitting display device of claim 46, wherein the gate of the driving thin-film transistor and the first memory aggregation plate are formed integrally.

49. The organic light-emitting display device of claim 46, wherein the semiconductor layer of the driving thin-film transistor and the semiconductor layer of the switching thin-film transistor are formed integrally, and The second storage aggregation board includes: The portion that overlaps with the impurity-doped region included in the semiconductor layer of the switching thin-film transistor and extends in a direction parallel to the scan line.

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