Fingerprint sensing unit and display device including the same

Abstract

The present invention provides a fingerprint sensing unit and a display device including the fingerprint sensing unit. The fingerprint sensing unit includes: a substrate; a scan line disposed on the substrate and extending in a first direction; a common power line disposed on the substrate and extending in a second direction intersecting the first direction; a thin film transistor connected to the scan line and the common power line; a sensing electrode connected to the thin film transistor; a first lens disposed on the sensing electrode and protruding in a direction away from the sensing electrode; and a first light blocking layer disposed on the sensing electrode and surrounding the first lens.

Description

[0001] This application claims the priority benefit of Korean Patent Application No. 10-2018-0018182 filed on February 14, 2018 in the Korean Intellectual Property Office (KIPO), the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] Exemplary embodiments of the present invention relate to a fingerprint sensing unit and a display device including the fingerprint sensing unit. Background Art

[0003] Recently, display devices are classified into liquid crystal display ("LCD") devices, organic light emitting diode ("OLED") display devices, plasma display panel ("PDP") display devices, or electrophoretic display devices based on their light emitting schemes.

[0004] As time goes by, various functions have been added to display devices in addition to the function of displaying images. For example, some display devices may have a touch sensing function and a fingerprint recognition function.

[0005] Fingerprint sensing may be classified into, for example, capacitive, optical, thermal, or ultrasonic types. The capacitive type is a method of recognizing a fingerprint by sensing a capacitance difference based on a distance between ridges and valleys of a fingerprint using a sensing electrode.

[0006] The fingerprint sensing unit includes a plurality of wirings for identifying a fingerprint in a display area of ​​the display device. The fingerprint sensing unit is also provided in the display area of ​​the display device. In addition, a moire phenomenon of visibly identifying the plurality of wirings may occur, and external light reflection due to the plurality of wirings may occur. Summary of the invention

[0007] According to an exemplary embodiment of the present invention, a fingerprint sensing unit includes: a substrate; a scan line disposed on the substrate and extending in a first direction; a common power line disposed on the substrate and extending in a second direction intersecting the first direction; a thin film transistor connected to the scan line and the common power line; a sensing electrode connected to the thin film transistor; a first lens disposed on the sensing electrode and protruding in a direction away from the sensing electrode; and a first light blocking layer disposed on the sensing electrode and surrounding the first lens.

[0008] In an exemplary embodiment of the present invention, the first lens may have a refractive index ranging from about 1.60 to about 1.80.

[0009] In an exemplary embodiment of the present invention, the first lens may include a plurality of lenses overlapped with the sensing electrode.

[0010] In an exemplary embodiment of the present invention, the first light blocking layer may overlap at least a portion of the scan line, the common power line, the thin film transistor, and the sensing electrode.

[0011] According to an exemplary embodiment of the present invention, a display device includes a display unit and a fingerprint sensing unit disposed on the display unit. The fingerprint sensing unit includes: a substrate having a first surface and a second surface opposite to the first surface; a scan line disposed on the first surface of the substrate, the scan line extending in a first direction; a common power line disposed on the first surface of the substrate, the common power line extending in a second direction intersecting the first direction; a thin film transistor connected to the scan line and the common power line; a sensing electrode connected to the thin film transistor; a first lens disposed on the sensing electrode and protruding in a direction away from the sensing electrode; and a first light blocking layer disposed on the sensing electrode and surrounding the first lens. The display unit includes: a base substrate; an organic light emitting element disposed on the base substrate; a thin film encapsulation layer disposed on the organic light emitting element; a second lens disposed on the thin film encapsulation layer and protruding in a direction away from the thin film encapsulation layer; and a second light blocking layer disposed on the thin film encapsulation layer and surrounding the second lens.

[0012] In an exemplary embodiment of the present invention, the first lens may be overlapped with the second lens.

[0013] In an exemplary embodiment of the present invention, the first lens may have a shape substantially the same as that of the second lens.

[0014] In an exemplary embodiment of the present invention, each of the first lens and the second lens may have a refractive index ranging from about 1.60 to about 1.80.

[0015] In an exemplary embodiment of the present invention, the first lens may include a plurality of first lenses, and the second lens may include a plurality of second lenses, wherein the plurality of first lenses and the plurality of second lenses overlap the sensing electrode.

[0016] In an exemplary embodiment of the present invention, each of the first light blocking layer and the second light blocking layer may overlap at least a portion of the scan line, the common power line, the thin film transistor, and the sensing electrode.

[0017] In an exemplary embodiment of the present invention, an organic light emitting element may include: a first electrode; an organic light emitting layer disposed on the first electrode; and a second electrode disposed on the organic light emitting layer.

[0018] In an exemplary embodiment of the present invention, each of the first lens and the second lens may overlap the first electrode.

[0019] In an exemplary embodiment of the present invention, the display unit may further include a pixel defining layer disposed on the base substrate and including an opening exposing at least a portion of the first electrode.

[0020] In an exemplary embodiment of the present invention, each of the first lens and the second lens may have an area greater than an area of ​​the opening of the pixel defining layer.

[0021] In an exemplary embodiment of the present invention, the fingerprint sensing unit may further include a third lens disposed on the second surface of the substrate and protruding in a direction away from the substrate.

[0022] In an exemplary embodiment of the present invention, the third lens may be overlapped with the first lens and the second lens, and have a refractive index ranging from about 1.60 to about 1.80.

[0023] In an exemplary embodiment of the present invention, the display device may further include a filling member disposed between the display unit and the fingerprint sensing unit.

[0024] In an exemplary embodiment of the present invention, the filler may have a refractive index ranging from about 1.40 to about 1.60.

[0025] In an exemplary embodiment of the present invention, the display device may further include: a window disposed on the fingerprint sensing unit; and an adhesive layer disposed between the fingerprint sensing unit and the window.

[0026] In an exemplary embodiment of the present invention, the adhesive layer may have a refractive index ranging from about 1.40 to about 1.60. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] A more complete understanding of the present invention and its many additional aspects will be readily obtained as the present invention and its many additional aspects become better understood by referring to the following detailed description when considered in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a circuit diagram showing a fingerprint sensing unit according to an exemplary embodiment of the present invention;

[0029] Figure 2 is a plan view showing a portion of a fingerprint sensing unit according to an exemplary embodiment of the present invention;

[0030] Figure 3 is along Figure 2 A cross-sectional view taken along line II';

[0031] Figure 4 is along Figure 2 A cross-sectional view taken along line II-II';

[0032] Figure 5 Is magnification Figure 3 A cross-sectional view of a region A;

[0033] Figure 6 is a plan view showing a portion of a fingerprint sensing unit according to an exemplary embodiment of the present invention;

[0034] Figure 7 is along Figure 6 A cross-sectional view taken along line III-III';

[0035] Figure 8 is a perspective view showing a display device according to an exemplary embodiment of the present invention;

[0036] Fig. 9 is along Figure 8 A cross-sectional view taken along line IV-IV';

[0037] Fig.10 is a plan view schematically illustrating a plurality of first electrodes and a plurality of openings according to an exemplary embodiment of the present invention;

[0038] Fig.11 is a plan view showing a plurality of openings, a plurality of first lenses, a plurality of second lenses, a plurality of sensing electrodes, and a light blocking layer according to an exemplary embodiment of the present invention;

[0039] Fig.12 is a plan view showing a plurality of openings, a plurality of first lenses, a plurality of second lenses, a sensing electrode, and a light blocking layer according to an exemplary embodiment of the present invention; and

[0040] Fig.13 is a cross-sectional view showing a display device according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0041] Exemplary embodiments of the present invention will now be described more fully below with reference to the accompanying drawings. However, the scope of the present invention is not limited to the following exemplary embodiments, but can be implemented in various different forms. It will be understood that the same reference numerals can refer to the same components.

[0042] In the drawings, the size of the elements may be exaggerated for clarity. In other words, since the size and thickness of the components in the drawings may be exaggerated for clarity, the following exemplary embodiments of the present invention are not limited thereto. When an element, layer, region, or plate is referred to as being "on" another element, layer, region, or plate, the element, layer, region, or plate may be directly on the other element, layer, region, or plate, or there may be an intermediate element, layer, region, or plate therebetween.

[0043] For ease of description, spatially relative terms such as "below", "under", "below", "above", "on", etc. may be used herein to describe the relationship between one element or component and another element or component as shown in the drawings. It will be understood that, in addition to the orientation depicted in the drawings, spatially relative terms are intended to include different orientations of the device in use or operation. For example, in a case where the device shown in the drawings is flipped, a device that is "below" or "below" another device may be "above" another device. Therefore, in the example, the illustrative term "below" may include both orientations of above and below (or below). The device may also be positioned in another direction (e.g., rotated 90 degrees or in other orientations), so spatially relative terms may be interpreted differently depending on the orientation.

[0044] It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present.

[0045] It will be understood that although the terms "first", "second", or "third", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Therefore, without departing from the spirit and scope of the present invention, the "first element" discussed below may be referred to as the "second element" or the "third element", and the "second element" and the "third element" may be named similarly.

[0046] In the following, reference will be made to Figures 1 to 5 A fingerprint sensing unit according to an exemplary embodiment of the present invention is described.

[0047] Figure 1 is a circuit diagram illustrating a fingerprint sensing unit according to an exemplary embodiment of the present invention.

[0048] Reference Figure 1 The fingerprint sensing unit according to the exemplary embodiment of the present invention includes a plurality of thin film transistors T1, T2 and T3, a plurality of wirings SL connected to the plurality of thin film transistors T1, T2 and T3 n-1 , SL n , PL and OL and the reference capacitor C r .

[0049] The plurality of thin film transistors T1 , T2 , and T3 include a first thin film transistor T1 , a second thin film transistor T2 , and a third thin film transistor T3 .

[0050] The first gate electrode G1 of the first thin film transistor T1 is connected to the first scan line SL n-1, a first source electrode S1 of the first thin film transistor T1 is connected to the common power line PL, and a first drain electrode D1 of the first thin film transistor T1 is connected to a third gate electrode G3 of the third thin film transistor T3 .

[0051] The second gate electrode G2 of the second thin film transistor T2 is connected to the second scan line SL n , the second source electrode S2 of the second thin film transistor T2 is connected to the common power line PL, and the second drain electrode D2 of the second thin film transistor T2 is connected to the third source electrode S3 of the third thin film transistor T3.

[0052] The third gate electrode G3 of the third thin film transistor T3 is connected to the first drain electrode D1 of the first thin film transistor T1 , the third source electrode S3 of the third thin film transistor T3 is connected to the second drain electrode D2 of the second thin film transistor T2 , and the third drain electrode D3 of the third thin film transistor T3 is connected to the output line OL.

[0053] As described above, the fingerprint sensing unit includes a first scan line SL for transmitting a first scan signal to the first gate electrode G1 of the first thin film transistor T1. n-1 , a second scanning line SL for transmitting a second scanning signal to the second gate electrode G2 of the second thin film transistor T2 n , a common power line PL for transmitting a driving voltage to the first source electrode S1 of the first thin film transistor T1 and the second source electrode S2 of the second thin film transistor T2, and a common power line PL for transmitting a driving current I flowing through the third thin film transistor T3 to the sensing driver d The output line OL.

[0054] Reference capacitor C r Including connecting to the second scan line SL n One electrode (eg, first electrode) CE1 of the thin film transistor and another electrode (eg, second electrode) CE2 connected to the first drain electrode D1 of the first thin film transistor T1, the third gate electrode G3 of the third thin film transistor T3, and the sensing electrode SE.

[0055] Hereinafter, driving of the fingerprint sensing unit will be described by way of example.

[0056] First, when the first scan signal is transmitted to the first scan line SL n-1 When the driving voltage is applied to the common power line PL, the first thin film transistor T1 is turned on. As an example, the first scan signal may be a pulse signal. For example, the first scan signal may correspond to a low voltage switching period of a signal maintained at a high voltage, or may correspond to a high voltage switching period of a signal maintained at a low voltage.

[0057] When the first thin film transistor T1 is turned on, the driving voltage of the common power line PL is transmitted to the third gate electrode G3 of the third thin film transistor T3 and the reference capacitor C through the first thin film transistor T1. r Therefore, the voltage is applied to the third gate electrode G3 of the third thin film transistor T3 and the reference capacitor C r The second electrode CE2 is turned on, and the third thin film transistor T3 is turned on.

[0058] When the second scanning signal is transmitted to the second scanning line SL n And when the driving voltage is applied to the common power line PL, the second thin film transistor T2 is turned on. Similar to the first scan signal, the second scan signal may be a pulse signal.

[0059] When the second thin film transistor T2 is turned on and the gate voltage V g When applied to the third gate electrode G3 of the third thin film transistor T3, the driving current I d Flows through the second thin film transistor T2 and the third thin film transistor T3. In this embodiment, the gate voltage V g According to the fingerprint capacitor C formed when a touch or fingerprint contact is made f For example, the gate voltage V of the third gate electrode G3 g According to the fingerprint capacitor C f The fingerprint capacitance and reference capacitor C r In addition, the driving current I flowing through the second thin film transistor T2 and the third thin film transistor T3 changes with the capacitive coupling between the reference capacitors. d According to the gate voltage V of the third gate electrode G3 g And changes.

[0060] The output line OL transmits the driving current I to the sensing driver. d The sensing driver can be based on the driving current I d The change amount after flowing through the third thin film transistor T3 is used to detect whether a touch input occurs, determine the touch coordinates, and the ridges and valleys of the fingerprint.

[0061] However, the structure of the fingerprint sensing unit according to an exemplary embodiment of the present invention is not limited thereto. The fingerprint sensing unit may include a plurality of thin film transistors, one or more capacitors, and wiring including one or more scan lines and one or more power lines.

[0062] Figure 2 is a plan view showing a portion of a fingerprint sensing unit according to an exemplary embodiment of the present invention, Figure 3 is along Figure 2 A cross-sectional view taken along line II' of Figure 4 is along Figure 2A cross-sectional view taken along line II-II'.

[0063] Reference Figure 2 , Figure 3 and Figure 4 The fingerprint sensing unit 10 according to the exemplary embodiment of the present invention includes a substrate 110. The fingerprint sensing unit 10 also includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a first scan line SL n-1 , the second scanning line SL n , a common power line PL, an output line OL, a sensing electrode SE, a buffer layer 120, a first insulating layer IL1, a second insulating layer IL2, a third insulating layer IL3, a first lens 130, and a first light blocking layer 150. In this embodiment, the first thin film transistor T1 includes a first gate electrode G1, a first source electrode S1, a first drain electrode D1, and a first active layer A1, the second thin film transistor T2 includes a second gate electrode G2, a second source electrode S2, a second drain electrode D2, and a second active layer A2, and the third thin film transistor T3 includes a third gate electrode G3, a third source electrode S3, a third drain electrode D3, and a third active layer A3.

[0064] The substrate 110 may be a plastic film having a flexible property. For example, the substrate 110 may include polyimide. However, exemplary embodiments of the present invention are not limited thereto, and for example, the substrate 110 may include an insulating material such as glass or quartz. The substrate 110 may include a material selected from materials having relatively high mechanical strength, thermal stability, transparency, surface smoothness, easy handling, and waterproofness.

[0065] The buffer layer 120 is disposed on the substrate 110. The buffer layer 120 can prevent the penetration of impurities and can flatten the surface. The buffer layer 120 can include various materials that can provide the above functions. For example, the buffer layer 120 can include silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y However, the buffer layer 120 may be omitted.

[0066] The first active layer A1, the second active layer A2, and the third active layer A3 are disposed on the buffer layer 120. The first active layer A1, the second active layer A2, and the third active layer A3 include semiconductor materials. The first active layer A1 includes a first source region, a first drain region, and a first channel region disposed between the first source region and the first drain region. The second active layer A2 includes a second source region SA2, a second drain region DA2, and a second channel region CA2 disposed between the second source region SA2 and the second drain region DA2. The third active layer A3 includes a third source region SA3, a third drain region DA3, and a third channel region CA3 disposed between the third source region SA3 and the third drain region DA3.

[0067] The first active layer A1, the second active layer A2, and the third active layer A3 may include amorphous silicon, polycrystalline silicon, or an oxide semiconductor, etc. The oxide semiconductor may include at least one of an oxide based on titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), germanium (Ge), zinc (Zn), gallium (Ga), tin (Sn), and indium (In), or a plurality of oxides thereof such as indium-gallium-zinc oxide (InGaZnO 4 ), indium-zinc oxide (Zn-In-O), zinc-tin oxide (Zn-Sn-O), indium-gallium oxide (In-Ga-O), indium-tin oxide (In-Sn-O), indium-zirconium oxide (In-Zr-O), indium-zirconium-zirconium oxide (In-Zr-Zn-O), indium-zirconium-tin oxide (In-Zr-Sn-O), indium-zirconium-gallium oxide (In-Zr-Ga-O), indium-aluminum oxide (In-Al-O), indium-zinc-aluminum oxide (In-Zn-Al-O), indium-tin-aluminum oxide (In-Sn-Al-O), indium-aluminum-gallium oxide (In-A In the case where the first active layer A1, the second active layer A2 and the third active layer A3 include an oxide semiconductor, a separate protective layer may be additionally provided to protect the oxide semiconductor from external environmental factors such as high temperature.

[0068] The first source region is spaced apart from the first drain region and the first channel region is disposed between the first source region and the first drain region, the second source region SA2 is spaced apart from the second drain region DA2 and the second channel region CA2 is disposed between the second source region SA2 and the second drain region DA2, the third source region SA3 is spaced apart from the third drain region DA3 and the third channel region CA3 is disposed between the third source region SA3 and the third drain region DA3. For example, the first source region, the second source region SA2, the third source region SA3, the first drain region, the second drain region DA2 and the third drain region DA3 may be formed by doping a semiconductor material with n-type impurities or p-type impurities.

[0069] The first insulating layer IL1 is disposed on the first active layer A1, the second active layer A2, and the third active layer A3. The first insulating layer IL1 may be a gate insulating layer. The first insulating layer IL1 may include silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y )

[0070] The first gate electrode G1, the second gate electrode G2, and the third gate electrode G3 are disposed on the first insulating layer IL1. The first gate electrode G1, the second gate electrode G2, and the third gate electrode G3 overlap the first active layer A1, the second active layer A2, and the third active layer A3, respectively. For example, the first gate electrode G1, the second gate electrode G2, and the third gate electrode G3 may overlap the first channel region CA2, and the third channel region CA3, respectively.

[0071] In addition, the first scanning line SL n-1 , the second scanning line SL n and reference capacitor C r The first electrode CE1 may be disposed on the first insulating layer IL1. The first scan line SL n-1 and the second scanning line SL n The reference capacitor C is disposed on the substrate 110 and extends along the first direction D1. r The first electrode CE1 may be integrally formed with the second gate electrode G2. For example, the first electrode CE1 and the second gate electrode G2 may be formed of substantially the same material. However, the present invention is not limited thereto.

[0072] The second insulating layer IL2 is disposed on the first gate electrode G1, the second gate electrode G2, the third gate electrode G3, the first scan line SL n-1 , the second scanning line SL n and reference capacitor C r The second insulating layer IL2 may be an organic insulating layer or a silicon nitride (SiN x ), silicon oxide (SiO 2) and / or silicon oxynitride (SiO x N y ) of an inorganic insulating layer.

[0073] The first source electrode S1, the second source electrode S2, the third source electrode S3, the first drain electrode D1, the second drain electrode D2 and the third drain electrode D3 are disposed on the second insulating layer IL2. The first source electrode S1 contacts the first source region of the first active layer A1 through the first contact hole CH1 penetrating the first insulating layer IL1 and the second insulating layer IL2. The first drain electrode D1 contacts the first drain region of the first active layer A1 through the second contact hole CH2 penetrating the first insulating layer IL1 and the second insulating layer IL2. The second source electrode S2 contacts the second source region SA2 of the second active layer A2 through the third contact hole CH3 defined in the first insulating layer IL1 and the second insulating layer IL2. The second drain electrode D2 contacts the second drain region DA2 of the second active layer A2 through the fourth contact hole CH4 penetrating the first insulating layer IL1 and the second insulating layer IL2. The third source electrode S3 contacts the third source region SA3 of the third active layer A3 through the fifth contact hole CH5 penetrating the first insulating layer IL1 and the second insulating layer IL2. The third drain electrode D3 contacts the third drain area DA3 of the third active layer A3 through a sixth contact hole CH6 penetrating the first insulating layer IL1 and the second insulating layer IL2 .

[0074] In addition, the common power line PL, the output line OL and the bridge electrode BE may be disposed on the second insulating layer IL2. The common power line PL and the output line OL are disposed on the substrate 110 and extend in a second direction D2 crossing the first direction D1. The bridge electrode BE contacts the third gate electrode G3 through the seventh contact hole CH7 penetrating the second insulating layer IL2.

[0075] The third insulating layer IL3 is disposed on the first source electrode S1, the second source electrode S2, the third source electrode S3, the first drain electrode D1, the second drain electrode D2, the third drain electrode D3, the common power line PL, the output line OL, and the bridge electrode BE. The third insulating layer IL3 may protect the first thin film transistor T1, the second thin film transistor T2, and the third thin film transistor T3 from, for example, impurities, and may planarize the upper surface thereof.

[0076] The third insulating layer IL3 may be an organic insulating layer or a silicon nitride (SiN x ), silicon oxide (SiO 2 ) and / or silicon oxynitride (SiO x N y ). For example, the third insulating layer IL3 may include a photosensitive polymer resin.

[0077] The sensing electrode SE is disposed on the third insulating layer IL3. The sensing electrode SE contacts the first drain electrode D1 of the first thin film transistor T1 through an eighth contact hole CH8 penetrating the third insulating layer IL3, and contacts the bridge electrode BE connected to the third gate electrode G3 of the third thin film transistor T3 through a ninth contact hole CH9 penetrating the third insulating layer IL3.

[0078] Reference capacitor C r The second electrode CE2 is disposed on the third insulating layer IL3. r The second electrode CE2 may be formed integrally with the sensing electrode SE. r The second electrode CE2 and the sensing electrode SE may be formed using substantially the same material and in substantially the same process.

[0079] The sensing electrode SE and the reference capacitor C r The second electrode CE2 may include metal or transparent conductive oxide (TCO). For example, the sensing electrode SE and the reference capacitor C r The second electrode CE2 may include an aluminum-based metal (such as aluminum (Al) or an aluminum alloy), a silver-based metal (such as silver (Ag) or a silver alloy), a copper-based metal (such as copper (Cu) or a copper alloy) and / or a molybdenum-based metal (such as molybdenum (Mo) or a molybdenum alloy). In addition, the sensing electrode SE and the reference capacitor C r The second electrode CE2 may include a transparent conductive oxide (TCO), for example, at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO). In addition, the sensing electrode SE and the reference capacitor C r The second electrode CE2 may include, for example, carbon nanotubes (CNT) and / or graphene. r Each of the second electrodes CE2 may have a multi-layer structure. However, the present invention is not limited thereto, for example, the sensing electrode SE and the second electrode CE2 may both have a single-layer structure.

[0080] The first lens 130 is disposed on the sensing electrode SE. The first lens 130 has a convex surface protruding in a direction away from the sensing electrode SE. For example, the first lens 130 may protrude in an upward direction away from the upper portion of the sensing electrode SE. The first lens 130 has a refractive index in a range from about 1.60 to about 1.80. For example, the first lens 130 may have a refractive index of about 1.65.

[0081] The first lens 130 may include, for example, a polymer organic material. The polymer organic material may include at least one of acrylic resin, epoxy resin, polyimide, and polyethylene. For example, the first lens 130 may be an acrylic lens including an acrylic derivative or a high refractive index lens including high refractive index nanoparticles. In addition, the first lens 130 may be a color filter. However, exemplary embodiments of the present invention are not limited thereto, and the first lens 130 may include various materials.

[0082] The first lens 130 may correspond to a light emitting area of ​​a display device to be described below. For example, the first lens 130 may overlap with the light emitting area of ​​the display device. Although the first lens 130 is shown as having a circular shape on a plane, exemplary embodiments of the present invention are not limited thereto, and the first lens 130 may have an elliptical shape, a polygonal shape, and / or an irregular shape (such as a partially polygonal and partially circular shape) on a plane.

[0083] For example, the diameter of the first lens 130 may be in the range of about 10 μm to about 100 μm, and the height of the first lens 130 may be in the range of about 0.5 μm to about 10 μm. However, exemplary embodiments of the present invention are not limited thereto, and the diameter and height of the first lens 130 may be variously designed, for example, in consideration of the size or resolution of the display device, etc.

[0084] The first light blocking layer 150 is disposed on the sensing electrode SE and the third insulating layer IL3. The first light blocking layer 150 is disposed to surround the first lens 130 on a plane. The first light blocking layer 150 may overlap at least a portion of the first lens 130. For example, the first light blocking layer 150 may include an opening overlapping the first lens 130. As another example, the first light blocking layer 150 may be disposed on a portion of the sensing electrode SE.

[0085] The first light blocking layer 150 is also referred to as a black matrix and may provide a light emitting region. The first light blocking layer 150 may include a chromium oxide (CrO x ) of metal or opaque organic film material.

[0086] Since the fingerprint sensing unit 10 according to an exemplary embodiment of the present invention includes the first lens 130 disposed on the sensing electrode SE, the light emitting efficiency of the display device including the fingerprint sensing unit 10 can be increased. In addition, since the fingerprint sensing unit 10 according to an exemplary embodiment of the present invention includes the first light blocking layer 150 surrounding the first lens 130, the external light reflection can be substantially prevented. Therefore, a separate polarizing plate for preventing the reflection of the external light can be omitted, and the moiré phenomenon can be substantially prevented by reducing the thickness of the display device, which will be described in detail below.

[0087] Figure 5 Is magnification Figure 3 A cross-sectional view of area A.

[0088] Reference Figure 5 , the fingerprint 170 includes a ridge 171 and a valley 172, thereby causing a distance difference from the sensing electrode SE. For example, the distance between the ridge 171 and the sensing electrode SE is smaller than the distance between the valley 172 and the sensing electrode SE. Such a distance difference can result in a fingerprint capacitance C between the ridge 171 and the sensing electrode SE. f_ridge The fingerprint capacitance C between the valley 172 and the sensing electrode SE f_valley The difference between.

[0089] As described above, the fingerprint capacitor C of the third gate electrode G3 f The fingerprint capacitance and reference capacitor C r The capacitive coupling between the reference capacitor and the gate voltage V g According to the fingerprint capacitor C f In addition, the driving current I flowing through the second thin film transistor T2 and the third thin film transistor T3 d According to the gate voltage V of the third gate electrode G3 g The sensing driver can vary according to the driving current I d The change in the amount of touch input is used to detect whether touch input occurs, determine the touch coordinates, and the ridges and valleys of the fingerprint.

[0090] In the following, reference will be made to Figure 6 and Figure 7 A fingerprint sensing unit according to an exemplary embodiment of the present invention is described. Descriptions of components that may be similar to those of the exemplary embodiment of the present invention may be omitted for convenience.

[0091] Figure 6 is a plan view showing a portion of a fingerprint sensing unit according to an exemplary embodiment of the present invention, Figure 7 is along Figure 6 A cross-sectional view taken along line III-III'.

[0092] Reference Figure 6 and Figure 7, the fingerprint sensing unit 11 according to an exemplary embodiment of the present invention includes a plurality of first lenses 131 overlapped with the sensing electrode SE. Each of the plurality of first lenses 131 has a convex surface protruding in a direction away from the sensing electrode SE. Each of the plurality of first lenses 131 may correspond to a light-emitting area of ​​the display device. Therefore, each of the plurality of first lenses 131 may have a size different from each other according to the area of ​​the light-emitting area of ​​the display device. However, the exemplary embodiment of the present invention is not limited thereto, for example, the plurality of first lenses 131 may have the same size as each other. Each of the plurality of first lenses 131 is shown to have a circular shape on a plane. However, the exemplary embodiment of the present invention is not limited thereto, and each of the plurality of first lenses 131 may have an elliptical shape, a polygonal shape and / or an irregular shape on a plane.

[0093] The refractive index of each of the plurality of first lenses 131 is in the range of about 1.60 to about 1.80. For example, each of the plurality of first lenses 131 has a refractive index of about 1.65. In addition, the diameter of each of the plurality of first lenses 131 may be in the range of about 10 μm to about 100 μm, and the height of each of the plurality of first lenses 131 may be in the range of about 0.5 μm to about 10 μm. However, exemplary embodiments of the present invention are not limited thereto, and the diameter and height of the plurality of first lenses 131 may be designed differently in consideration of the size or resolution of the display device, etc.

[0094] The first light blocking layer 151 is disposed on the sensing electrode SE and the third insulating layer IL3. The first light blocking layer 151 is disposed to surround the plurality of first lenses 131 on a plane. The first light blocking layer 151 may overlap at least a portion of the plurality of first lenses 131. For example, the first light blocking layer 151 may cover at least a portion of each of the plurality of first lenses 131, and may include a plurality of openings exposing at least a portion of each of the plurality of first lenses 131.

[0095] Since the fingerprint sensing unit 11 according to an exemplary embodiment of the present invention includes a plurality of first lenses 131 disposed on the sensing electrode SE, the light emitting efficiency of the display device including the fingerprint sensing unit 11 can be increased. In addition, since the fingerprint sensing unit 11 according to an exemplary embodiment of the present invention includes the first light blocking layer 151 surrounding the first lens 131, external light reflection can be substantially prevented. Therefore, a separate polarizing plate for preventing reflection of external light can be omitted, and the moiré phenomenon can be substantially prevented by reducing the thickness of the display device, which will be described in detail below.

[0096] In the following, reference will be made to Figures 8 to 11A display device according to an exemplary embodiment of the present invention is described. Descriptions of components that may be similar to those of the above-described exemplary embodiment of the present invention may be omitted for the sake of convenience.

[0097] Figure 8 is a perspective view showing a display device according to an exemplary embodiment of the present invention, Fig. 9 is along Figure 8 A cross-sectional view taken along line IV-IV' of Fig.10 is a plan view schematically showing a plurality of first electrodes and a plurality of openings according to an exemplary embodiment of the present invention, Fig.11 is a plan view illustrating a plurality of openings, a plurality of first lenses, a plurality of second lenses, a plurality of sensing electrodes, and a light blocking layer according to an exemplary embodiment of the present invention.

[0098] Reference Figure 8 , the display device includes a fingerprint sensing unit 10, a display unit 20, and a window 30. In the present embodiment, although the fingerprint sensing unit 10 and the display unit 20 are shown as being separated from each other, the fingerprint sensing unit 10 and the display unit 20 may be integrally formed. For example, the display device will be described on the premise that the fingerprint sensing unit 10 has a box-on-box structure in which the fingerprint sensing unit 10 is directly provided on the display unit 20. However, the exemplary embodiments of the present invention are not limited thereto, and the fingerprint sensing unit 10 may have an in-box structure in which the fingerprint sensing unit 10 is formed in the display unit 20. In addition, the display device may be an organic light emitting diode ("OLED") display device, but the exemplary embodiments of the present invention are not limited thereto, and for example, the display device may be a liquid crystal display ("LCD") device.

[0099] The fingerprint sensing unit 10 is Figures 1 to 5 The fingerprint sensing unit 10 is described under the assumption that the fingerprint sensing unit 10 is shown in FIG. In other words, the fingerprint sensing unit 10 includes a substrate 110, a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a first scan line SL n-1 , the second scanning line SL n , a common power line PL, an output line OL, a sensing electrode SE, a buffer layer 120 , a first insulating layer IL1 , a second insulating layer IL2 , a third insulating layer IL3 , a first lens 130 , and a light blocking layer 150 .

[0100] The display unit 20 may be divided into a display area DA and a non-display area NDA. The display unit 20 includes a plurality of pixels PX arranged in a matrix form in the display area DA. The plurality of pixels PX may have a quadrilateral shape. For example, the plurality of pixels PX may have a basic rhombus shape, but the exemplary embodiment of the present invention is not limited thereto, and the plurality of pixels PX may have various shapes, such as a basic circular shape or a basic polygonal shape.

[0101] The fingerprint sensing unit 10 is disposed on the display unit 20. The fingerprint sensing unit 10 includes a plurality of sensing electrodes SE for detecting whether a touch input occurs, touch coordinates, ridges and valleys of a fingerprint. Figure 8 As shown in FIG. 1 , the fingerprint sensing unit 10 may include a plurality of sensing electrodes SE disposed on the entire surface of the substrate 110 overlapping the display unit 20. Therefore, a touch or fingerprint may be sensed on the entire surface of the display device.

[0102] The window 30 is provided on the fingerprint sensing unit 10. The window 30 may protect the fingerprint sensing unit 10 and the display unit 20 from external scratches. The window 30 may be divided into a transmission area TA and a non-transmission area NTA. The transmission area TA may be positioned to correspond to the display area DA of the display unit 20, and the non-transmission area NTA may be positioned to correspond to the non-display area NDA of the display unit 20. For example, the transmission area TA may overlap with the display area DA, and the non-transmission area NTA may overlap with the non-display area NDA. As another example, the non-transmission area NTA may be located at the edge of the window 30. In addition, the non-transmission area NTA may at least partially surround the transmission area TA.

[0103] The window 30 may include at least one of glass, sapphire, diamond, polymethyl methacrylate (PMMA), and polycarbonate (PC). Therefore, the user may view light emitted from the display unit 20 through the transmission area TA of the window 30.

[0104] Reference Fig. 9 The display unit 20 includes a base substrate 210, a driving circuit unit 230, a pixel defining layer 290, an OLED (organic light emitting diode, as an example of an organic light emitting element) 310, a thin film encapsulation layer 320, a second lens 330 and a second light blocking layer 350.

[0105] The buffer layer 220 is disposed on the base substrate 210. The buffer layer 220 can prevent the penetration of undesirable elements and flatten the surface below the buffer layer 220. The buffer layer 220 can include various materials that can perform the above functions. For example, the buffer layer 220 can include silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y However, the buffer layer 220 may be omitted.

[0106] The driving circuit unit 230 is disposed on the buffer layer 220. The driving circuit unit 230 corresponds to a portion including a plurality of thin film transistors Tr and a capacitor Cp, and drives the OLED 310. In addition, the driving circuit unit 230 includes gate lines disposed in one direction and data lines 271 and a common power line 272 insulated from and crossing the gate lines. The OLED 310 emits light according to a driving signal received from the driving circuit unit 230 to display an image.

[0107] The display device according to an exemplary embodiment of the present invention may have a 2Tr-1Cap structure in which two thin film transistors Tr and one capacitor Cp are provided in one pixel PX or may have various structures including three or more thin film transistors Tr and two or more capacitors Cp in one pixel PX.

[0108] The capacitor Cp includes a pair of electrodes 258 and 278, and an insulating interlayer 245 is placed between the pair of electrodes 258 and 278. In this embodiment, the insulating interlayer 245 may be a dielectric element. The capacitance of the capacitor Cp may be determined by the charge accumulated in the capacitor Cp and the voltage between the two electrodes 258 and 278.

[0109] The thin film transistor Tr includes a semiconductor layer 232, a gate electrode 255, a source electrode 276, and a drain electrode 277. The semiconductor layer 232 may be insulated from the gate electrode 255 by the gate insulating layer 240. The thin film transistor Tr applies a driving power of the organic light emitting layer 312 of the OLED 310 in the selected pixel PX to the first electrode 311 to emit light. In the present embodiment, the gate electrode 255 is connected to one electrode (e.g., the first electrode) 258 of the capacitor Cp, each of the source electrode 276 and the other electrode (e.g., the second electrode) 278 of the capacitor Cp is connected to the common power line 272, and the drain electrode 277 is connected to the first electrode 311 of the OLED 310 through a contact hole penetrating the planarization layer 246.

[0110] The planarization layer 246 is disposed on the insulating interlayer 245. The planarization layer 246 includes an insulating material and may protect the driving circuit unit 230. The planarization layer 246 and the insulating interlayer 245 may include substantially the same material.

[0111] The first electrode 311 is disposed on the planarization layer 246. The first electrode 311 may be a pixel electrode and may be an anode. The first electrode 311 has conductivity and may be, for example, one of a transmissive electrode, a transflective electrode, and a reflective electrode.

[0112] When the first electrode 311 is a transmissive electrode, the first electrode 311 may include a transparent conductive oxide (TCO). For example, at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium tin zinc oxide (ITZO) may be used as the TCO. When the first electrode 311 is a transflective electrode or a reflective electrode, the first electrode 311 may include at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and Cu.

[0113] The pixel defining layer 290 may be disposed on the planarization layer 246 and may divide the light emitting region. In the present embodiment, the light emitting region may also be referred to as a pixel region. The pixel defining layer 290 may include a polymer organic material. For example, the pixel defining layer 290 may include at least one of a polyimide (PI)-based resin, a polyacrylic resin, a PET resin, and a PEN resin.

[0114] The pixel defining layer 290 may include an opening 295, and at least a portion of the first electrode 311 is exposed by the pixel defining layer 290 through the opening 295. The first electrode 311 overlaps at least a portion of the pixel defining layer 290 and is partially exposed by the opening 295. The opening 295 may be a region overlapping the first electrode 311 but not overlapping the pixel defining layer 290. The opening 295 may correspond to a light emitting region. In addition, a boundary where the pixel defining layer 290 contacts the first electrode 311 at the opening 295 is an edge 291 of the opening 295.

[0115] Reference Fig.10 , the pixel defining layer 290 includes a plurality of openings 295 respectively corresponding to the plurality of pixels PX. The plurality of pixels PX include a red pixel R for emitting red light, a green pixel G for emitting green light, and a blue pixel B for emitting blue light. In the present embodiment, the OLED 310 of the red pixel R includes a red light emitting layer, the OLED 310 of the green pixel G includes a green light emitting layer, and the OLED 310 of the blue pixel B includes a blue light emitting layer. However, exemplary embodiments of the present invention are not limited thereto, and the plurality of pixels PX may include pixels each emitting light having cyan, magenta, or yellow.

[0116] The edges 291 of the plurality of openings 295 may each have a shape similar to that of the first electrode 311 in a plane. Fig.10 As shown in FIG. 2 , each of the edge 291 of the opening 295 and the first electrode 311 may have a substantially octagonal shape similar to a rhombus in a plane.

[0117] In this embodiment, each of the plurality of first electrodes 311 may correspond to a red pixel R, a green pixel G, and a blue pixel B, respectively, and may have different sizes on a plane. Similarly, each of the plurality of openings 295 may correspond to a red pixel R, a green pixel G, and a blue pixel B, respectively, and may have different sizes on a plane. For example, Fig.10 As shown in FIG. 1 , the sizes of the opening 295 and the first electrode 311 corresponding to the red pixel R may be respectively larger than the sizes of the opening 295 and the first electrode 311 corresponding to the green pixel G, and may be respectively smaller than or substantially equal to the sizes of the opening 295 and the first electrode 311 corresponding to the blue pixel B. However, exemplary embodiments of the present invention are not limited thereto, and for example, each of the opening 295 and the first electrode 311 may have various sizes.

[0118] In addition, the display device according to the exemplary embodiment of the present invention may have a Pentile structure. Fig.11 As shown in , a plurality of first electrodes 311 corresponding to the green light emitting layer may be disposed at a predetermined distance apart from each other in the Nth row, and a first electrode 311 corresponding to the red light emitting layer and a first electrode 311 corresponding to the blue light emitting layer may be alternately disposed in the N+1th row adjacent to the Nth row. Similarly, a plurality of first electrodes 311 corresponding to the green light emitting layer may be disposed at a predetermined distance apart from each other in the N+2th row adjacent to the N+1th row, and a first electrode 311 corresponding to the red light emitting layer and a first electrode 311 corresponding to the blue light emitting layer may be alternately disposed in the N+3th row adjacent to the N+2th row.

[0119] In addition, the first electrodes 311 corresponding to the multiple green light emission layers arranged in the Nth row may be alternately arranged with the first electrodes 311 corresponding to the multiple red light emission layers and the blue light emission layers arranged in the N+1th row. For example, the first electrodes 311 corresponding to the red light emission layers and the blue light emission layers may be alternately arranged in the Mth column, and the first electrodes 311 corresponding to the multiple green light emission layers may be arranged at a predetermined distance apart from each other in the M+1th column adjacent to the Mth column. Similarly, the first electrodes 311 corresponding to the red light emission layers and the blue light emission layers may be alternately arranged in the M+2th column adjacent to the M+1th column, and the first electrodes corresponding to the multiple green light emission layers may be arranged at a predetermined distance apart from each other in the M+3th column adjacent to the M+2th column. For example, multiple first electrodes 311 may be repeatedly arranged on the substrate 110 in the above structure.

[0120] The organic light emitting layer 312 is disposed on the first electrode 311. For example, the organic light emitting layer 312 is disposed at the opening 295 exposing the first electrode 311. As another example, the organic light emitting layer 312 may be disposed on the pixel defining layer 290 including the opening 295. For example, the organic light emitting layer 312 may be disposed on the sidewall of the pixel defining layer 290.

[0121] The organic light emitting layer 312 includes a light emitting material. In addition, the organic light emitting layer 312 may include a host and a light emitting dopant. The organic light emitting layer 312 may be manufactured using known materials in a known manner. For example, the organic light emitting layer 312 may be formed by various methods such as a vacuum deposition method, a spin coating method, a casting method, a Langmuir-Blodgett (LB) method, an inkjet printing method, a laser printing method, or a laser induced thermal imaging (LITI) method.

[0122] The second electrode 313 is disposed on the organic light emitting layer 312. The second electrode 313 may be a common electrode and may be a cathode. The second electrode 313 may be, for example, a transmissive electrode, a transflective electrode, or a reflective electrode.

[0123] When the second electrode 313 is a transmissive electrode, the second electrode 313 may include at least one of Li, Ca, LiF / Ca, LiF / Al, Al, Mg, BaF, Ba, Ag, and Cu. For example, the second electrode 313 may include a mixture of Ag and Mg. When the second electrode 313 is a transflective electrode or a reflective electrode, the second electrode 313 may include at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, and Cu. In addition, in addition to the transflective electrode or the reflective electrode, the second electrode 313 may also include a transparent conductive layer, the transparent conductive layer including, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and / or indium zinc tin oxide (IZTO).

[0124] Although not shown, at least one of a hole injection layer (HIL) and a hole transport layer (HTL) may be disposed between the first electrode 311 and the organic light emitting layer 312 , and at least one of an electron transport layer (ETL) and an electron injection layer (EIL) may be disposed between the organic light emitting layer 312 and the second electrode 313 .

[0125] For example, when the OLED 310 is a top emission type, the first electrode 311 may be a reflective electrode, and the second electrode 313 may be a transmissive electrode or a transflective electrode. As another example, when the OLED 310 is a bottom emission type, the first electrode 311 may be a transmissive electrode or a transflective electrode, and the second electrode 313 may be a reflective electrode. According to an exemplary embodiment of the present invention, the OLED 310 may be a top emission type, the first electrode 311 may be a reflective electrode, and the second electrode 313 may be a transflective electrode.

[0126] The thin film encapsulation layer 320 is disposed on the second electrode 313 to protect the OLED 310. The thin film encapsulation layer 320 may substantially prevent external air such as moisture, oxygen, or other environmental elements from penetrating into the OLED 310.

[0127] The thin film encapsulation layer 320 includes at least one inorganic layer 321 and 323 and at least one organic layer 322 alternately arranged with the at least one inorganic layer 321 and 323. Fig. 9 , the thin film encapsulation layer 320 according to the exemplary embodiment of the present invention is illustrated as including two inorganic layers 321 and 323 and one organic layer 322 , but the exemplary embodiment of the present invention is not limited thereto.

[0128] The inorganic layers 321 and 323 include Al 2 O 3 、TiO 2 、ZrO、SiO 2 、AlON、AlN、SiON、Si 3 N 4 , ZnO and Ta 2 O 5 The inorganic layers 321 and 323 may be formed by a method such as a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. However, the exemplary embodiments of the present invention are not limited thereto, and the inorganic layers 321 and 323 may be formed by various methods known to those skilled in the relevant art.

[0129] The organic layer 322 may include a polymer material. Examples of polymer materials may include acrylic resin, epoxy resin, polyimide, and polyethylene. The organic layer 322 may be formed by a thermal deposition process. The thermal deposition process for forming the organic layer 322 is performed within a temperature range that does not damage the OLED 310. However, exemplary embodiments of the present invention are not limited thereto, and for example, the organic layer 322 may be formed by various methods known to those skilled in the relevant art.

[0130] The inorganic layers 321 and 323 having a high-density thin film can substantially prevent or effectively reduce the penetration of moisture, oxygen or other environmental elements. The inorganic layers 321 and 323 can prevent moisture and oxygen from penetrating into the OLED 310.

[0131] Moisture and oxygen that have passed through the inorganic layers 321 and 323 may be blocked by the organic layer 322. The organic layer 322 may have a relatively low anti-permeation efficiency compared to the inorganic layers 321 and 323. However, in addition to the anti-moisture permeation function, the organic layer 322 may also be used as a buffer layer to reduce stress between one of the inorganic layers 321 and 323 and the other of the inorganic layers 321 and 323. In addition, since the organic layer 322 has a planarizing property, the uppermost surface of the thin film encapsulation layer 320 may be planarized by the organic layer 322.

[0132] The second lens 330 is disposed on the thin film encapsulation layer 320. The second lens 330 has a convex surface protruding in a direction away from the thin film encapsulation layer 320. For example, the second lens 330 may protrude in an upward direction away from the upper surface of the thin film encapsulation layer 320. The second lens 330 has a refractive index in a range of, for example, from about 1.60 to about 1.80. For example, the second lens 330 may have a refractive index of about 1.65.

[0133] The second lens 330 may include, for example, a polymer organic material. The polymer organic material may include, for example, at least one of acrylic resin, epoxy resin, polyimide, and polyethylene. For example, the second lens 330 may be an acrylic lens including an acrylic derivative or a high refractive index lens including high refractive index nanoparticles. In addition, the second lens 330 may be a color filter. However, exemplary embodiments of the present invention are not limited thereto, and the second lens 330 may include various materials.

[0134] The second lens 330 overlaps the first electrode 311 of the OLED 310. For example, the second lens 330 is located on the first electrode 311 and at the opening 295 of the pixel defining layer 290. In addition, the second lens 330 overlaps the first lens 130. For example, the first lens 130, the second lens 330, and the first electrode 311 overlap each other and are all disposed in the light emitting region of the OLED 310.

[0135] Reference Fig.11 , the second lens 330 may have a shape substantially the same as that of the first lens 130 in a plane. For example, the first lens 130 and the second lens 330 may have a circular shape in a plane. However, exemplary embodiments of the present invention are not limited thereto, and for example, the first lens 130 and the second lens 330 may have an elliptical shape, a polygonal shape, and an irregular shape in a plane.

[0136] In addition, each of the first lens 130 and the second lens 330 has an area larger than that of the opening 295 in a plane. Therefore, the light L1 emitted from the OLED 310 can be prevented from being absorbed by the first light blocking layer 150 of the fingerprint sensing unit 10, thereby substantially minimizing light loss. The diameter of the second lens 330 may be in the range from about 10 μm to about 100 μm, and the height of the second lens 330 may be in the range from about 0.5 μm to about 10 μm. However, exemplary embodiments of the present invention are not limited thereto, and the diameter and height of the second lens 330 may be variously designed in consideration of the size and resolution of the display device, etc.

[0137] The second light blocking layer 350 is disposed on the thin film encapsulation layer 320. The second light blocking layer 350 is disposed to surround the second lens 330 on a plane. The second light blocking layer 350 may overlap at least a portion of the second lens 330.

[0138] The second light blocking layer 350 may be referred to as a black matrix and may provide a light emitting region. The second light blocking layer 350 may include a chromium oxide (CrO x ) of metal or opaque organic film material.

[0139] The fingerprint sensing unit 10 is disposed on the display unit 20 including the base substrate 210 , the driving circuit unit 230 , the pixel defining layer 290 , the OLED 310 , the thin film encapsulation layer 320 , the second lens 330 , and the second light blocking layer 350 .

[0140] As described above, the fingerprint sensing unit 10 includes a substrate 110, a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a first scan line SL n-1 , the second scanning line SL n , a common power line PL, an output line OL, a sensing electrode SE, a buffer layer 120 , a first insulating layer IL1 , a second insulating layer IL2 , a third insulating layer IL3 , a first lens 130 , and a first light blocking layer 150 .

[0141] The filler 340 is disposed between the fingerprint sensing unit 10 and the display unit 20. For example, the filler 340 may be disposed to directly contact the second lens 330, the second light blocking layer 350 of the display unit 20, and the substrate 110 of the fingerprint sensing unit 10. As another example, the filler 340 may be disposed between the lower surface of the substrate 110 and the upper surfaces of the second light blocking layer 350 and the second lens 330. The filler 340 may include an organic material such as a polymer.

[0142] The filler 340 has a refractive index smaller than that of the second lens 330. The filler 340 may have a refractive index in a range of, for example, about 1.40 to about 1.60. For example, the second lens 330 may have a refractive index of about 1.65, and the filler 340 may have a refractive index of about 1.45. The light L1 emitted from the OLED 310 may be refracted at an interface between the second lens 330 having a relatively high refractive index and the filler 340 having a relatively low refractive index.

[0143] Therefore, the linearity of the light L1 emitted from the OLED 310 can be increased. In addition, since the light L1 emitted from the OLED 310 can be prevented from being absorbed by the first light blocking layer 150 of the fingerprint sensing unit 10, light loss can be minimized and the light emission efficiency of the display device can be increased.

[0144] The adhesive layer 420 is disposed between the fingerprint sensing unit 10 and the window 30. The adhesive layer 420 may include an optically clear adhesive (OCA) to prevent the brightness of the light from being reduced. In addition, the adhesive layer 420 may include a transparent polymer resin that is viscous and can be cured by light or heat. For example, the adhesive layer 420 may include a photocurable resin that is cured by light irradiation.

[0145] The adhesive layer 420 has a refractive index less than that of the first lens 130. The adhesive layer 420 may have a refractive index in a range of, for example, about 1.40 to about 1.60. For example, the first lens 130 may have a refractive index of about 1.65, and the adhesive layer 420 may have a refractive index of about 1.45. The light L1 refracted at the interface between the second lens 330 and the filler 340 and incident on the fingerprint sensing unit 10 may be refracted again at the interface between the first lens 130 having a relatively high refractive index and the adhesive layer 420 having a relatively low refractive index. Therefore, the light-collecting efficiency of the light L1 emitted from the OLED 310 may be increased.

[0146] In addition, since the display device according to an exemplary embodiment of the present invention includes the first lens 130 and the second lens 330 overlapped with each other in the light emitting region, the area of ​​the first light blocking layer 150 and the second light blocking layer 350 can be substantially maximized. Therefore, a separate polarizing plate for preventing reflection of external light can be omitted, and the moiré phenomenon can be substantially prevented by reducing the thickness of the display device.

[0147] In the following, reference will be made to Fig.12 A display device according to an exemplary embodiment of the present invention is described. Descriptions of components that may be similar to those of the exemplary embodiment of the present invention may be omitted for the sake of convenience.

[0148] Fig.12is a plan view illustrating a plurality of openings, a plurality of first lenses, a plurality of second lenses, a sensing electrode, and a light blocking layer according to an exemplary embodiment of the present invention.

[0149] Reference Fig.12 , unlike the sensing electrode SE according to the exemplary embodiment of the present invention, the sensing electrode SE′ according to the exemplary embodiment of the present invention may overlap with a plurality of first lenses 130 and a plurality of second lenses 330. In other words, unlike the exemplary embodiment of the present invention in which one sensing electrode SE overlaps with one first lens 130 and one second lens 330, one sensing electrode SE′ according to the exemplary embodiment of the present invention may overlap with a plurality of first lenses 130 and a plurality of second lenses 330.

[0150] Therefore, the area of ​​the plurality of wirings connected to the sensing electrode SE' can be reduced. In addition, since the wiring area of ​​the fingerprint sensing unit 10 can be reduced, the reflection of external light through the wiring can be minimized and the display quality of the display device can be improved.

[0151] In the following, reference will be made to Fig.13 A display device according to an exemplary embodiment of the present invention is described. For convenience of explanation, descriptions of configurations that may be similar to those of the exemplary embodiment of the present invention may be omitted.

[0152] Fig.13 is a cross-sectional view showing a display device according to an exemplary embodiment of the present invention.

[0153] Reference Fig.13 , the display device according to an exemplary embodiment of the present invention further includes a third lens 430 disposed on the lower surface of the substrate 110. In other words, the first lens 130 may be disposed on the first surface S01 of the substrate 110, and the third lens 430 may be disposed on the second surface S02 of the substrate 110 opposite to the first surface S01 of the substrate 110. The third lens 430 has a convex surface protruding in a direction away from the substrate 110 and toward the display unit 20. For example, the third lens 430 may protrude in a direction away from the second surface S02 of the substrate 110 and may face the second lens 330. The third lens 430 has a refractive index in a range of, for example, from about 1.60 to about 1.80. For example, the third lens 430 may have a refractive index of about 1.65.

[0154] The third lens 430 may include, for example, a polymer organic material. The polymer organic material may include at least one of acrylic resin, epoxy resin, polyimide, and polyethylene. For example, the third lens 430 may be an acrylic lens including an acrylic derivative or a high refractive index lens including high refractive index nanoparticles. In addition, the third lens 430 may be a color filter. However, exemplary embodiments of the present invention are not limited thereto, and the third lens 430 may include various materials.

[0155] The third lens 430 overlaps the first electrode 311 of the OLED 310, for example, the third lens 430 is located on the first electrode 311 and at the opening 295 of the pixel defining layer 290. In addition, the third lens 430 overlaps each of the first lens 130 and the second lens 330. For example, the first lens 130, the second lens 330, the third lens 430, and the first electrode 311 overlap each other and are all disposed in the light emitting region of the OLED 310.

[0156] The third lens 430 may have a shape on a plane that is substantially the same as that of the first lens 130 and the second lens 330. For example, each of the first lens 130, the second lens 330, and the third lens 430 may have a circular shape on a plane. However, exemplary embodiments of the present invention are not limited thereto, and for example, each of the first lens 130, the second lens 330, and the third lens 430 may have an elliptical shape, a polygonal shape, and an irregular shape on a plane.

[0157] In addition, the first lens 130, the second lens 330, and the third lens 430 have an area larger than the area of ​​the opening 295 on a plane. Therefore, the light L2 emitted from the OLED 310 can be prevented from being absorbed by the first light blocking layer 150 of the fingerprint sensing unit 10, thereby minimizing light loss. The diameter of the third lens 430 may be, for example, in the range from about 10 μm to about 100 μm, and the height of the third lens 430 may be, for example, in the range from about 0.5 μm to about 10 μm. However, exemplary embodiments of the present invention are not limited thereto, and the diameter and height of the third lens 430 may be differently designed in consideration of the size or resolution of the display device, etc.

[0158] The filler 340 is disposed between the fingerprint sensing unit 10 and the display unit 20. For example, the filler 340 may be disposed to directly contact the second lens 330 and the second light blocking layer 350 of the display unit 20 and the substrate 110 and the third lens 430 of the fingerprint sensing unit 10. The filler 340 may include an organic material such as a polymer.

[0159] The filler 340 has a refractive index smaller than that of the third lens 430. The filler 340 may have a refractive index in a range of, for example, about 1.40 to about 1.60. For example, the third lens 430 may have a refractive index of about 1.65, and the filler 340 may have a refractive index of about 1.45. The light L2 emitted from the OLED 310 may be refracted at an interface between the filler 340 having a relatively low refractive index and the third lens 430 having a relatively high refractive index.

[0160] Therefore, the linearity of the light L2 emitted from the OLED 310 can be increased. In addition, since the light L2 emitted from the OLED 310 can be prevented from being absorbed by the first light blocking layer 150 of the fingerprint sensing unit 10, light loss can be minimized and the light emission efficiency of the display device can be increased.

[0161] As described above, according to one or more exemplary embodiments of the present invention, a fingerprint sensing unit and a display device including the fingerprint sensing unit include a plurality of lenses disposed in a light emitting region of the display device, and thus the display quality of the display device may be improved.

[0162] While the invention has been shown and described with reference to exemplary embodiments thereof, it will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

Claims

1. A fingerprint sensing unit, comprising: substrate; A scanning line, disposed on the substrate and extending along a first direction; a common power line, disposed on the substrate and extending along a second direction intersecting the first direction; a thin film transistor connected to the scan line and the common power line; A sensing electrode connected to the thin film transistor; a first lens, disposed on the sensing electrode and protruding in a direction away from the sensing electrode; as well as a first light blocking layer, disposed on the sensing electrode and surrounding the first lens, The sensing electrode is arranged to surround the first lens on a plane, and the first light blocking layer covers a portion of the sensing electrode.

2. The fingerprint sensing unit according to claim 1, wherein: The first lens has a refractive index ranging from 1.60 to 1.

80.

3. The fingerprint sensing unit according to claim 1, wherein: The first lens includes a plurality of lenses overlapped with the sensing electrode.

4. The fingerprint sensing unit according to claim 1, wherein: The first light blocking layer overlaps at least a portion of the scan line, the common power line, the thin film transistor, and the sensing electrode.

5. A display device, comprising: Display unit; as well as A fingerprint sensing unit is arranged on the display unit, The fingerprint sensing unit includes: a substrate having a first surface and a second surface opposite to the first surface; a scan line arranged on the first surface of the substrate, the scan line extending along a first direction; a common power line arranged on the first surface of the substrate, the common power line extending along a second direction intersecting the first direction; a thin film transistor connected to the scan line and the common power line; a sensing electrode connected to the thin film transistor; a first lens arranged on the sensing electrode and protruding in a direction away from the sensing electrode; and a first light blocking layer arranged on the sensing electrode and surrounding the first lens, wherein the sensing electrode is arranged to surround the first lens on a plane, and the first light blocking layer covers a portion of the sensing electrode, and The display unit includes: a base substrate; an organic light emitting element disposed on the base substrate; a thin film encapsulation layer disposed on the organic light emitting element; a second lens disposed on the thin film encapsulation layer and protruding in a direction away from the thin film encapsulation layer; and a second light blocking layer disposed on the thin film encapsulation layer and surrounding the second lens.

6. The display device according to claim 5, wherein: The first lens is stacked with the second lens.

7. The display device according to claim 5, wherein: The first lens has the same shape as that of the second lens.

8. The display device according to claim 5, wherein: Each of the first lens and the second lens has a refractive index ranging from 1.60 to 1.

80.

9. The display device according to claim 5, wherein: The first lens includes a plurality of first lenses, and the second lens includes a plurality of second lenses, wherein the plurality of first lenses and the plurality of second lenses overlap the sensing electrode.

10. The display device according to claim 5, wherein: Each of the first light blocking layer and the second light blocking layer overlaps at least a portion of the scan line, the common power line, the thin film transistor, and the sensing electrode.

11. The display device according to claim 5, wherein: The organic light emitting element comprises: a first electrode; an organic light-emitting layer, disposed on the first electrode; and The second electrode is arranged on the organic light emitting layer.

12. The display device according to claim 11, wherein: Each of the first lens and the second lens overlaps the first electrode.

13. The display device according to claim 11, wherein: The display unit further includes a pixel defining layer disposed on the base substrate and including an opening exposing at least a portion of the first electrode.

14. The display device according to claim 13, wherein: Each of the first lens and the second lens has an area larger than an area of ​​the opening of the pixel defining layer.

15. The display device according to claim 5, wherein: The fingerprint sensing unit further includes a third lens disposed on the second surface of the substrate and protruding in a direction away from the substrate.

16. The display device according to claim 15, wherein: The third lens overlaps the first lens and the second lens, and has a refractive index ranging from 1.60 to 1.

80. 17 . The display device according to claim 5 , further comprising a filling member disposed between the display unit and the fingerprint sensing unit.

18. The display device according to claim 17, wherein: The filler has a refractive index ranging from 1.40 to 1.

60.

19. The display device according to claim 5, further comprising: a window, disposed on the fingerprint sensing unit; as well as An adhesive layer is disposed between the fingerprint sensing unit and the window.

20. The display device according to claim 19, wherein: The adhesive layer has a refractive index ranging from 1.40 to 1.60.

Images