A power driving device for semiconductor temperature control module

Abstract

The present invention discloses a power driving device for a semiconductor temperature control module. The power driving device includes a current magnitude control module, a current direction conversion module and a monitoring and protection module; the current magnitude control module is connected to the current direction conversion module; the monitoring and protection module is respectively connected to the current magnitude control module and the current direction conversion module. On the one hand, the power driving device adopts a half-bridge gate driver and related discrete components to form a current magnitude control module, which has the advantages of simple circuit structure, continuous operation, and low cost; on the other hand, the current direction conversion module controls the H-bridge circuit through a single-channel driving signal to achieve the change of the driving current direction, and has the characteristics of few control ports and high reliability; in addition, the monitoring and protection module realizes efficient protection of the semiconductor temperature control module and its power driving device through a fast-responding hardware trigger circuit and a shutdown protection circuit.

Description

Technical Field

[0001] The present invention relates to a power driving device for a semiconductor temperature control module, and also to a semiconductor temperature control module comprising the power driving device, belonging to the technical field of semiconductor temperature control. Background Art

[0002] Thermo Electric Cooler (TEC) is an electronic device developed using the Peltier effect of semiconductor materials. When the semiconductor changes the direction of the current, the cooling contact surface and the heating contact surface of the semiconductor will exchange, which is a typical feature of the semiconductor thermoelectric cooler. This feature makes it very convenient to use in high-precision temperature control systems, small constant temperature equipment, refrigeration equipment or heat dissipation equipment. For example, semiconductor temperature control systems based on TEC technology have been widely used in scientific instruments such as DNA detectors and PCR instruments in the fields of biology and medicine, helping the instruments to achieve fast and accurate temperature control.

[0003] In the prior art, there are relatively mature and easy-to-implement technical solutions for low-power semiconductor temperature control module drive devices. Such semiconductor temperature control module drive devices generally use dedicated drive chips, such as MAX1968, MAX1978, ADN8830, LCT1923 and other different types of drive chips, and configure peripheral circuits according to actual needs. Such drive chips have high integration, high efficiency and small size, but because the above-mentioned drive chips are dedicated chips, their market volume is small, they are generally expensive, have long delivery cycles, and their drive power is small, which is not suitable for medium and large power drive occasions. Therefore, the application occasions of the drive chip are limited and the market competitiveness is low.

[0004] In addition, in existing semiconductor temperature control module driving devices, the two functions of current direction conversion and current magnitude control are usually combined and implemented by an H-bridge circuit. Although the circuit structure is relatively simple, it has disadvantages such as large overshoot when large current direction is converted and poor real-time system protection. It is easy to cause problems such as poor device reliability, high failure rate, and short service life of the semiconductor temperature control module. Summary of the invention

[0005] The primary technical problem to be solved by the present invention is to provide a power driving device for a semiconductor temperature control module.

[0006] Another technical problem to be solved by the present invention is to provide a semiconductor temperature control module including the above-mentioned power driving device.

[0007] In order to achieve the above object, the present invention adopts the following technical solutions:

[0008] According to a first aspect of an embodiment of the present invention, there is provided a power driving device for a semiconductor temperature control module, comprising a current magnitude control module, a current direction conversion module and a monitoring and protection module; the current magnitude control module is connected to the current direction conversion module; the monitoring and protection module is respectively connected to the current magnitude control module and the current direction conversion module, and is used to monitor the current, voltage and temperature of a key position in real time;

[0009] The current magnitude control module receives a pulse width modulation signal from a digital signal processor and outputs a continuously controllable direct current;

[0010] The current direction conversion module is used to receive the high and low level signals output by the digital signal processor to control the current direction of the semiconductor temperature control module and realize the cooling and heating drive control of the semiconductor temperature control module.

[0011] Preferably, the current magnitude control module includes a half-bridge gate driver, a buck converter and a current sampling circuit, the input end of the half-bridge gate driver is connected to the pulse width modulation signal output end of the digital signal processor, the output end of the half-bridge gate driver is connected to the input end of the buck converter, the output end of the buck converter is connected to the input end of the current sampling circuit, and the current sampling circuit is respectively connected to the current direction conversion module and the monitoring and protection module.

[0012] Preferably, the buck converter includes a half-bridge circuit and a low-pass filter circuit, the input ends of the half-bridge circuit and the low-pass filter circuit are respectively connected to the corresponding ports of the half-bridge gate driver, the output end of the half-bridge circuit is also connected to the input end of the low-pass filter circuit, and the output end of the low-pass filter circuit is connected to the current sampling circuit.

[0013] Preferably, the half-bridge circuit includes a first power MOS tube and a second power MOS tube, the gate of the first power MOS tube is connected to the high-side gate drive output port of the half-bridge gate driver, the gate of the second power MOS tube is connected to the low-side gate drive output port of the half-bridge gate driver, the source of the first power MOS tube and the drain of the second power MOS tube are connected together and then respectively connected to the high-side MOS tube source connection port of the half-bridge gate driver and the input end of the low-pass filter circuit, the drain of the first power MOS tube is connected to the high-side drive voltage, and the source of the second power MOS tube is grounded.

[0014] Preferably, the current direction conversion module includes a current direction control logic circuit and an H-bridge circuit, the input end of the current direction control logic circuit is connected to the high and low level output ports of the digital signal processor, the output end of the current direction control logic circuit is connected to the input end of the H-bridge circuit, and the output end of the H-bridge circuit is connected to the semiconductor temperature control module.

[0015] Preferably, the H-bridge circuit includes a third power MOS tube, a fourth power MOS tube, a fifth power MOS tube and a sixth power MOS tube, the gates of the third power MOS tube, the fourth power MOS tube, the fifth power MOS tube and the sixth power MOS tube are respectively connected to the current direction control logic circuit and the monitoring protection module, the drain of the third power MOS tube is respectively connected to the drain of the fifth power MOS tube, and then respectively connected to the current sampling circuit and the monitoring protection module, the source of the third power MOS tube and the fifth power MOS tube are respectively connected to the semiconductor temperature control module, the source of the third power MOS tube is also connected to the drain of the fourth power MOS tube, the source of the fifth power MOS tube is also connected to the drain of the sixth power MOS tube, and the sources of the fourth power MOS tube and the sixth power MOS tube are respectively grounded.

[0016] Preferably, the current direction control logic circuit includes a first N-channel MOS transistor, a second N-channel MOS transistor, and a third N-channel MOS transistor; the drain of the first N-channel MOS transistor Q7 is respectively connected to one end of the first resistor and the second resistor, and the cathode of the first switch diode, the anode of the first switch diode is respectively connected to the other end of the second resistor and the anode of the second switch diode, the cathode of the second switch diode is connected to the cathode of the first Zener diode, and the anode of the first Zener diode is respectively connected to the source of the third power MOS transistor, the drain of the fourth power MOS transistor, and the semiconductor temperature control module; the gate of the first N-channel MOS transistor is respectively connected to one end of the third resistor and the fourth resistor, the cathode of the third switch diode, the gate of the third N-channel MOS transistor, and the high and low level output ports of the digital signal processor, and the anode of the third switch diode is respectively connected to the other end of the fourth resistor and the gate of the fourth power MOS transistor;

[0017] The connection relationship between the second N-channel MOS transistor and the fifth resistor, the sixth resistor, the fourth switch diode, the fifth switch diode, the second Zener diode, the seventh resistor, the eighth resistor, and the sixth switch diode is the same as the connection relationship between the first N-channel MOS transistor and the first resistor, the second resistor, the first switch diode, the second switch diode, the first Zener diode, the third resistor, the fourth resistor, and the third switch diode;

[0018] The gate of the second N-channel MOS transistor is also connected to the drain of the third N-channel MOS transistor, and the sources of the first N-channel MOS transistor, the second N-channel MOS transistor and the third N-channel MOS transistor are grounded respectively; the other ends of the second resistor and the sixth resistor are respectively connected to the high-end driving voltage, and the other ends of the third resistor and the eighth resistor are respectively connected to the low-end driving voltage.

[0019] Preferably, the monitoring and protection module includes a current monitoring circuit, a voltage monitoring circuit, a temperature monitoring circuit, a trigger circuit and a shutdown protection circuit; the current monitoring circuit and the voltage monitoring circuit are respectively connected to the current sampling circuit, and the temperature monitoring circuit is connected to the temperature sensor inside the semiconductor temperature control module; the trigger circuit is respectively connected to the current monitoring circuit, the voltage monitoring circuit, the temperature monitoring circuit and the shutdown protection circuit, and the shutdown protection circuit is connected to the H-bridge circuit of the current direction conversion module.

[0020] Preferably, the current monitoring circuit includes a current shunt monitor and a first differential comparator, the current shunt monitor is connected to the current sampling circuit and the first differential comparator respectively, and the first differential comparator is connected to the trigger circuit;

[0021] The voltage monitoring circuit includes a second differential comparator, and the second differential comparator is respectively connected to the current sampling circuit, the H-bridge circuit of the current direction conversion module, and the trigger circuit;

[0022] The temperature monitoring circuit includes an operational amplifier and a third differential comparator, the operational amplifier is respectively connected to the temperature sensor inside the semiconductor temperature control module and the third differential comparator, and the third differential comparator is connected to the trigger circuit; wherein,

[0023] The first differential comparator, the second differential comparator and the third differential comparator are single-channel differential comparators or multi-channel differential comparators.

[0024] According to a second aspect of an embodiment of the present invention, a semiconductor temperature control module is provided, comprising the above-mentioned power driving device.

[0025] The power driving device for a semiconductor temperature control module provided by the present invention, on the one hand, adopts a half-bridge gate driver and related discrete components to form a current control module, which has the advantages of simple circuit structure, continuous operation, and low cost; on the other hand, the current direction conversion module controls the H-bridge circuit through a single-channel driving signal to achieve the change of the driving current direction, and has the characteristics of few control ports and high reliability; in addition, the monitoring and protection module realizes efficient protection of the semiconductor temperature control module and its power driving device through a fast-responding hardware trigger circuit and a shutdown protection circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic diagram of the principle of a power driving device for a semiconductor temperature control module provided by the present invention;

[0027] Figure 2 A detailed diagram of the principle of a power driving device for a semiconductor temperature control module provided by the present invention;

[0028] Figure 3 This is a circuit schematic diagram of a current direction conversion module in a power driving device for a semiconductor temperature control module provided by the present invention. DETAILED DESCRIPTION

[0029] The technical content of the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] like Figure 1 As shown, the power driving device for a semiconductor temperature control module provided by the present invention includes a current control module 1, a current direction conversion module 2 and a monitoring and protection module 3; the current control module 1 is respectively connected to the current direction conversion module 2 and the monitoring and protection module 3; the current direction conversion module 2 is respectively connected to the monitoring and protection module 3 and an external semiconductor temperature control module, and the semiconductor temperature control module is also connected to the monitoring and protection module 3; the current control module 1 and the current direction conversion module 2 are also respectively connected to corresponding ports of an external DSP (digital signal processor).

[0031] The current magnitude control module 1 is driven to output a continuous controllable current (DC current) by outputting a single PWM (Pulse Width Modulation) signal through an external DSP (digital signal processor); and the high and low level signals output by the DSP (digital signal processor) are received through the current direction conversion module 2 to realize high-power temperature control driving of the external semiconductor temperature control module; in addition, the power driving device for the semiconductor temperature control module also monitors the current and voltage at the key position of the power driving device for the semiconductor temperature control module and the temperature at the key position of the semiconductor temperature control module in real time through the monitoring protection module 3, and can control the current direction conversion module 2 in a high real-time manner to realize over-current, over-voltage and over-temperature protection of the semiconductor temperature control module and the power driving device for the semiconductor temperature control module. Among them, the current and voltage at the key position of the power driving device for the semiconductor temperature control module refer to the current output by the current magnitude control module and the high-end voltage of the H-bridge circuit 22 of the current direction conversion module 2 described below; the temperature at the key position of the semiconductor temperature control module refers to the temperature detected by the temperature sensor in the semiconductor temperature control module described below.

[0032] like Figure 2 As shown, the current magnitude control module 1 includes a half-bridge gate driver 11, a buck converter 12 and a current sampling circuit 13. The input end of the half-bridge gate driver 11 is connected to the PWM signal output end of the external DSP, the output end of the half-bridge gate driver 11 is connected to the input end of the buck converter 12, the output end of the buck converter 12 is connected to the input end of the current sampling circuit 13, and the current sampling circuit 13 is respectively connected to the current direction conversion module 2 and the monitoring protection module 3. The half-bridge gate driver 11 receives the single-channel PWM signal output by the external DSP (digital signal processor) to drive the buck converter 12 to output a preset voltage, thereby controlling the magnitude of the output power current of the buck converter 12, so that the buck converter 12 can output a continuous controllable current. That is, the PWM signal output by the DSP (digital signal processor) is used to adjust the duty cycle at a fixed frequency to control the magnitude of the output voltage of the buck converter 12, thereby controlling the magnitude of the output power current of the buck converter 12.

[0033] like Figure 2As shown, the buck converter 12 includes a half-bridge circuit 120 and a low-pass filter circuit 121. The input ends of the half-bridge circuit 120 and the low-pass filter circuit 121 are respectively connected to the corresponding ports of the half-bridge gate driver 11. The output end of the half-bridge circuit 120 is also connected to the input end of the low-pass filter circuit 121. The output end of the low-pass filter circuit 121 is connected to the current sampling circuit 13. The current sampling circuit 13 is respectively connected to the current direction conversion module 2 and the monitoring protection module 3. The half-bridge gate driver 11 receives a single-channel PWM signal output by the DSP (digital signal processor) to drive the half-bridge circuit 120 and the low-pass filter circuit 121 to cooperate in outputting a continuous controllable current. Among them, the half-bridge gate driver 11 can adopt a half-bridge gate driver of model LM5105SD, but is not limited thereto. The signal input port IN of the half-bridge gate driver 11 is connected to the PWM signal output port of the DSP (digital signal processor) for receiving the single-channel PWM signal output by the DSP (digital signal processor).

[0034] Specifically, Figure 2 As shown, the half-bridge circuit 120 includes a first power MOS transistor Q1 and a second power MOS transistor Q2, the gate of the first power MOS transistor Q1 is connected to the high-side gate drive output port HO of the half-bridge gate driver 11, the gate of the second power MOS transistor Q2 is connected to the low-side gate drive output port LO, the source of the first power MOS transistor Q1 and the drain of the second power MOS transistor Q2 are connected together and respectively connected to the high-side MOS transistor source connection port HS of the half-bridge gate driver 11 and the input end of the low-pass filter circuit 121, the drain of the first power MOS transistor Q1 is connected to the high-side drive voltage VCC, and the source of the second power MOS transistor Q2 is grounded. The low-pass filter circuit 121 includes a power inductor L1 and a filter capacitor C1, one end of the power inductor L1 is respectively connected to the source of the first power MOS tube Q1, the drain of the second power MOS tube Q2 and the high-side MOS tube source connection port HS of the half-bridge gate driver 11, the other end of the power inductor L1 is connected to one end of the filter capacitor C1 and then connected to the current direction conversion module 2 and the monitoring protection module 3 through the current sampling circuit, and the other end of the filter capacitor C1 is grounded. Among them, the first power MOS tube Q1 and the second power MOS tube Q2 can adopt a dual N-channel power MOS tube that includes the first power MOS tube Q1 and the second power MOS tube Q2, and the dual N-channel power MOS tube can adopt a dual N-channel power MOS tube of model Si7938DP, but is not limited thereto.

[0035] In order to monitor the continuous controllable current output by the buck converter 12 and implement overcurrent protection for the power drive device used for the semiconductor temperature control module, the current sampling circuit 13 can use a current sampling resistor R1 to collect the continuous controllable current output by the buck converter 12 through the current sampling resistor R1, and output the collected current to the monitoring protection module 3. The monitoring protection module 3 compares the received sampling current output by the current sampling circuit 13 (the collected continuous controllable current output by the buck converter 12) with the semiconductor temperature control module working current pre-stored therein. If the working current of the semiconductor temperature control module is exceeded, the semiconductor temperature control module is turned off to stop working, thereby achieving the effect of overcurrent protection.

[0036] like Figure 2 and Figure 3 As shown, the current direction conversion module 2 includes a current direction control logic circuit 21 and an H-bridge circuit 22. The input end of the current direction control logic circuit 21 is connected to the high and low level output ports of an external DSP (digital signal processor), the output end of the current direction control logic circuit 21 is connected to the input end of the H-bridge circuit, and the output end of the H-bridge circuit is connected to an external semiconductor temperature control module. The high and low level signals sent by the DSP (digital signal processor) are received by the current direction control logic circuit 21 to control the current flow direction in the H-bridge circuit 22, and then control the current flow direction of the semiconductor temperature control module, so as to realize the cooling and heating drive control of the semiconductor temperature control module.

[0037] The H-bridge circuit 22 includes a third power MOS tube Q3, a fourth power MOS tube Q4, a fifth power MOS tube Q5 and a sixth power MOS tube Q6. The gates of the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5 and the sixth power MOS tube Q6 are respectively connected to the current direction control logic circuit 21 and the monitoring and protection module 3. The drain of the third power MOS tube Q3 is respectively connected to the drain of the fifth power MOS tube Q5, and then respectively connected to the current sampling resistor R1 and the monitoring and protection module 3. The source of the third power MOS tube Q3 and the fifth power MOS tube Q5 is respectively connected to the semiconductor temperature control module. The source of the third power MOS tube Q3 is also connected to the drain of the fourth power MOS tube Q4. The source of the fifth power MOS tube Q5 is also connected to the drain of the sixth power MOS tube Q6. The sources of the fourth power MOS tube Q4 and the sixth power MOS tube Q6 are respectively grounded. The high and low level signals sent by the DSP (digital signal processor) are received through the current direction control logic circuit 21 to control each power MOS tube in the H-bridge circuit 22 to be in the on or off state, thereby controlling the current flow direction in the H-bridge circuit 22, and then controlling the current flow direction of the semiconductor temperature control module, and realizing the cooling and heating drive control of the semiconductor temperature control module. The third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5 and the sixth power MOS tube Q6 can adopt a dual N-channel power MOS tube including the third power MOS tube Q3 and the fourth power MOS tube Q4, the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5 and the sixth power MOS tube Q6 can adopt a dual N-channel power MOS tube including the third power MOS tube Q3 and the fourth power MOS tube Q4, and notify the dual N-channel power MOS tube including the fifth power MOS tube Q5 and the sixth power MOS tube Q6, the dual N-channel power MOS tube can adopt a dual N-channel power MOS tube of Si7938DP, but is not limited to this.

[0038] Among them, Figure 3As shown, the current direction control logic circuit includes a first resistor R2, a second resistor R3, a third resistor R4, a fourth resistor R5, a fifth resistor R6, a sixth resistor R7, a seventh resistor R8, an eighth resistor R9, a first switch diode D1, a second switch diode D2, a third switch diode D4, a fourth switch diode D5, a fifth switch diode D6, a sixth switch diode D8, a first Zener diode D3, a second Zener diode D7, a first N-channel MOS transistor Q7, a second N-channel MOS transistor Q8, and a third N-channel MOS transistor Q9; the drain of the first N-channel MOS transistor Q7 is respectively connected to one end of the first resistor R2 and the second resistor R3 and the cathode of the first switch diode D1, the anode of the first switch diode D1 is respectively connected to the other end of the second resistor R3 and the anode of the second switch diode D2, the cathode of the second switch diode D2 is connected to the cathode of the first Zener diode D3, and the anode of the first Zener diode D3 is respectively connected to the source of the third power MOS transistor Q3. , the drain of the fourth power MOS tube Q4, and the semiconductor temperature control module; the gate of the first N-channel MOS tube Q7 is respectively connected to one end of the third resistor R4 and the fourth resistor R5, the cathode of the third switch diode D4, the gate of the third N-channel MOS tube Q9, and the high and low level output ports of the external DSP (digital signal processor), and the anode of the third switch diode D4 is respectively connected to the other end of the fourth resistor R5 and the gate of the fourth power MOS tube Q4; the connection relationship between the second N-channel MOS tube Q8 and the fifth resistor R6, the sixth resistor R7, the fourth switch diode D5, the fifth switch diode D6, the second Zener diode D7, the seventh resistor R8, the eighth resistor R9, and the sixth switch diode D8 is the same as the connection relationship between the first N-channel MOS tube Q7 and the first resistor R2, the second resistor R3, the first switch diode D1, the second switch diode D2, the first Zener diode D3, the third resistor R4, the fourth resistor R5, and the third switch diode D4, which will not be repeated here. In addition, the gate of the second N-channel MOS transistor Q8 is also connected to the drain of the third N-channel MOS transistor Q9, and the sources of the first N-channel MOS transistor Q7, the second N-channel MOS transistor Q8 and the third N-channel MOS transistor Q9 are grounded respectively; the other ends of the second resistor R3 and the sixth resistor R7 are respectively connected to the high-end driving voltage VCC, and the other ends of the third resistor R4 and the eighth resistor R9 are respectively connected to the low-end driving voltage VDD.

[0039] In the current direction control logic circuit, complementary switch control of the half-bridge circuit composed of the third power MOS tube Q3 and the fourth power MOS tube Q4 is realized through the complementary control signal between the drain and the gate of the first N-channel MOS tube Q7; complementary switch control of the half-bridge circuit composed of the fifth power MOS tube Q5 and the sixth power MOS tube Q6 is realized through the complementary control signal between the drain and the gate of the second N-channel MOS tube Q8; and, through the high and low level signals sent by the DSP (digital signal processor), a complementary control signal is formed between the drain and the gate of the third N-channel MOS tube Q9 to realize complementary switch control of the first N-channel MOS tube Q7 and the second N-channel MOS tube Q8, and then realize complementary switch control of the H-bridge circuit composed of the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5 and the sixth power MOS tube Q6, so as to control the current flow direction of the semiconductor temperature control module and realize cooling and heating drive control of the semiconductor temperature control module.

[0040] like Figure 2 As shown, the monitoring and protection module 3 includes a current monitoring circuit 31, a voltage monitoring circuit 32, a temperature monitoring circuit 33, a trigger circuit 34 and a shutdown protection circuit 35. The current monitoring circuit 31 is connected to the two ends of the current sampling resistor R1 to monitor the working current of the semiconductor temperature control module, and the current monitoring circuit 31 is connected to the trigger circuit 35 to realize the trigger function of the abnormal working current of the semiconductor temperature control module; specifically, the current monitoring circuit 31 includes a current shunt monitor (such as a current shunt monitor with a model of INA194) and a differential comparator (such as a differential comparator with a model of LM2901); wherein the current shunt monitor is connected to the two ends of the current sampling resistor R1, and the continuously controllable current output by the buck converter 12 collected is output to the current shunt monitor through the current sampling resistor R1, and the current shunt monitor receives the received The controllable current is amplified and output to the differential comparator, which compares the controllable current with the working current of the semiconductor temperature control module pre-stored therein. If the working current exceeds the working current of the semiconductor temperature control module, the trigger signal is transmitted to the shutdown protection circuit 35 through the trigger circuit 34, and the gates of the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5 and the sixth power MOS tube Q6 of the H-bridge circuit are controlled by the shutdown protection circuit 35, so that the four power MOS tubes of the H-bridge circuit are quickly shut down when the working current of the semiconductor temperature control module is abnormal, thereby realizing the real-time protection function of the power driving device for the semiconductor temperature control module.

[0041] The voltage monitoring circuit 32 is connected to the current sampling resistor R1 to monitor the working voltage of the semiconductor temperature control module, and the voltage monitoring circuit 32 is connected to the trigger circuit 35 to realize the trigger function of the abnormal working voltage of the semiconductor temperature control module; the voltage monitoring circuit 32 includes a differential comparator (such as a differential comparator of model LM2901); wherein the differential comparator is connected to the current sampling resistor R1, receives the working voltage of the semiconductor temperature control module through the differential comparator, and the differential comparator triggers the semiconductor temperature control module The operating voltage of the block is compared with the operating voltage of the semiconductor temperature control module pre-stored inside it. If it exceeds the operating voltage of the semiconductor temperature control module, the trigger signal is transmitted to the shutdown protection circuit 35 through the trigger circuit 34. The gates of the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5 and the sixth power MOS tube Q6 of the H-bridge circuit are controlled by the shutdown protection circuit 35, so that the four power MOS tubes of the H-bridge circuit are quickly shut down when the operating voltage of the semiconductor temperature control module is abnormal, thereby realizing the real-time protection function of the power driving device for the semiconductor temperature control module.

[0042] The temperature monitoring circuit 33 is connected to the temperature sensor inside the semiconductor temperature control module to monitor the working temperature of the semiconductor temperature control module, and the temperature monitoring circuit 33 is connected to the trigger circuit 35 to realize the trigger function of abnormal working temperature of the semiconductor temperature control module; specifically, the temperature monitoring circuit 33 includes an operational amplifier (such as an operational amplifier with model AD8608) and a differential comparator (such as a differential comparator with model LM2901); wherein the operational amplifier is connected to the temperature sensor inside the semiconductor temperature control module, and the collected working temperature of the semiconductor temperature control module is transmitted to the operational amplifier through the temperature sensor inside the semiconductor temperature control module. The operating temperature is amplified and output to the differential comparator, which compares the operating temperature with the operating temperature of the semiconductor temperature control module pre-stored therein. If the operating temperature exceeds the operating temperature of the semiconductor temperature control module, the trigger signal is transmitted to the shutdown protection circuit 35 through the trigger circuit 34, and the gates of the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5 and the sixth power MOS tube Q6 of the H-bridge circuit are controlled by the shutdown protection circuit 35, so that the four power MOS tubes of the H-bridge circuit are quickly shut down when the operating current of the semiconductor temperature control module is abnormal, thereby realizing the real-time protection function of the power driving device for the semiconductor temperature control module.

[0043] The trigger circuit includes a JK trigger (such as a trigger with model CD74HCT73); wherein the JK trigger is respectively connected to a current monitoring circuit 31, a voltage monitoring circuit 32, a temperature monitoring circuit 33, and a shutdown protection circuit 35, and transmits a trigger signal to the shutdown protection circuit 35 via the trigger circuit by monitoring abnormal current, voltage, and temperature values ​​of the semiconductor temperature control module; the gates of the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5, and the sixth power MOS tube Q6 of the H-bridge circuit are controlled by the shutdown protection circuit 35, so that the four power MOS tubes of the H-bridge circuit are quickly shut down when the working current, voltage, or temperature value of the semiconductor temperature control module is abnormal, thereby realizing the real-time protection function of the power driving device.

[0044] It should be emphasized that the differential comparators in the current monitoring circuit 31, the voltage monitoring circuit 32, and the temperature monitoring circuit 33 can respectively adopt single-channel differential comparators, or multi-channel differential comparators (differential comparators with multiple output ports). In addition, the shutdown protection circuit 35 is an existing conventional circuit for controlling the gate on / off of the third power MOS tube Q3, the fourth power MOS tube Q4, the fifth power MOS tube Q5, and the sixth power MOS tube Q6 of the H-bridge circuit, which will not be described in detail here.

[0045] Since the buck converter 12 uses a high-power MOS tube, it can provide drive and control with a wide driving power range and precisely adjustable driving current for the semiconductor temperature control module in the relevant scientific instruments or equipment, and can greatly reduce the failure rate of instruments or equipment using semiconductor temperature control technology, and more safely and reliably ensure the functional realization and stable operation of the instrument or equipment, thereby effectively reducing the subsequent maintenance cost of similar instruments or equipment, and has great market value.

[0046] In addition, the present invention also provides a semiconductor temperature control module. The semiconductor temperature control module includes the above-mentioned power driving device. The other components of the semiconductor temperature control module are the same as those of the existing semiconductor temperature control module, which will not be described one by one here.

[0047] The power driving device for a semiconductor temperature control module provided by the present invention, on the one hand, adopts a half-bridge gate driver and related discrete components to form a current control module, which has the advantages of simple circuit structure, continuous operation, and low cost; on the other hand, the current direction conversion module controls the H-bridge circuit through a single-channel driving signal to achieve the change of the driving current direction, and has the characteristics of few control ports and high reliability; in addition, the monitoring and protection module realizes efficient protection of the semiconductor temperature control module and its power driving device through a fast-responding hardware trigger circuit and a shutdown protection circuit.

[0048] The above is a detailed description of the power driving device for semiconductor temperature control module provided by the present invention. For those skilled in the art, any obvious changes made to it without departing from the essential spirit of the present invention will fall within the protection scope of the patent right of the present invention.

Claims

1. A power driving device for a semiconductor temperature control module, characterized in that It includes a current magnitude control module, a current direction conversion module and a monitoring protection module; the current magnitude control module is connected to the current direction conversion module; The monitoring and protection module is connected to the current magnitude control module and the current direction conversion module respectively, and is used to monitor the current, voltage and temperature of key positions in real time; The current magnitude control module receives a pulse width modulation signal from a digital signal processor and outputs a continuously controllable direct current; The current direction conversion module is used to receive the high and low level signals output by the digital signal processor to control the current direction of the semiconductor temperature control module to achieve cooling and heating drive control of the semiconductor temperature control module. The current direction conversion module includes a current direction control logic circuit and an H-bridge circuit, wherein the input end of the current direction control logic circuit is connected to the high and low level output ports of the digital signal processor, the output end of the current direction control logic circuit is connected to the input end of the H-bridge circuit, and the output end of the H-bridge circuit is connected to the semiconductor temperature control module; The current direction control logic circuit includes a first N-channel MOS transistor, a second N-channel MOS transistor, and a third N-channel MOS transistor; The drain of the first N-channel MOS transistor Q7 is respectively connected to one end of the first resistor and the second resistor, and the cathode of the first switch diode; the anode of the first switch diode is respectively connected to the other end of the second resistor and the anode of the second switch diode; the cathode of the second switch diode is connected to the cathode of the first Zener diode; the anode of the first Zener diode is respectively connected to the source of the third power MOS transistor, the drain of the fourth power MOS transistor, and the semiconductor temperature control module; the gate of the first N-channel MOS transistor is respectively connected to one end of the third resistor and the fourth resistor, the cathode of the third switch diode, the gate of the third N-channel MOS transistor, and the high and low level output ports of the digital signal processor; the anode of the third switch diode is respectively connected to the other end of the fourth resistor and the gate of the fourth power MOS transistor; The connection relationship between the second N-channel MOS transistor and the fifth resistor, the sixth resistor, the fourth switch diode, the fifth switch diode, the second Zener diode, the seventh resistor, the eighth resistor, and the sixth switch diode is the same as the connection relationship between the first N-channel MOS transistor and the first resistor, the second resistor, the first switch diode, the second switch diode, the first Zener diode, the third resistor, the fourth resistor, and the third switch diode; The gate of the second N-channel MOS transistor is also connected to the drain of the third N-channel MOS transistor, and the sources of the first N-channel MOS transistor, the second N-channel MOS transistor and the third N-channel MOS transistor are grounded respectively; the other ends of the first resistor and the fifth resistor are respectively connected to the high-end driving voltage, and the other ends of the third resistor and the seventh resistor are respectively connected to the low-end driving voltage; The current magnitude control module includes a half-bridge gate driver, a buck converter and a current sampling circuit. The input end of the half-bridge gate driver is connected to the pulse width modulation signal output end of the digital signal processor, the output end of the half-bridge gate driver is connected to the input end of the buck converter, the output end of the buck converter is connected to the input end of the current sampling circuit, and the current sampling circuit is respectively connected to the current direction conversion module and the monitoring protection module.

2. The power driving device for a semiconductor temperature control module according to claim 1, characterized in that: The buck converter includes a half-bridge circuit and a low-pass filter circuit, the input ends of the half-bridge circuit and the low-pass filter circuit are respectively connected to the corresponding ports of the half-bridge gate driver, the output end of the half-bridge circuit is also connected to the input end of the low-pass filter circuit, and the output end of the low-pass filter circuit is connected to the current sampling circuit.

3. The power driving device for a semiconductor temperature control module according to claim 2, characterized in that: The half-bridge circuit includes a first power MOS tube and a second power MOS tube, the gate of the first power MOS tube is connected to the high-side gate drive output port of the half-bridge gate driver, the gate of the second power MOS tube is connected to the low-side gate drive output port of the half-bridge gate driver, the source of the first power MOS tube and the drain of the second power MOS tube are connected together and then respectively connected to the high-side MOS tube source connection port of the half-bridge gate driver and the input end of the low-pass filter circuit, the drain of the first power MOS tube is connected to the high-side drive voltage, and the source of the second power MOS tube is grounded.

4. The power driving device for a semiconductor temperature control module according to claim 1, characterized in that: The H-bridge circuit includes a third power MOS tube, a fourth power MOS tube, a fifth power MOS tube and a sixth power MOS tube. The gates of the third power MOS tube, the fourth power MOS tube, the fifth power MOS tube and the sixth power MOS tube are respectively connected to the current direction control logic circuit and the monitoring protection module. The drain of the third power MOS tube is respectively connected to the drain of the fifth power MOS tube and then respectively connected to the current sampling circuit and the monitoring protection module. The source of the third power MOS tube and the fifth power MOS tube is respectively connected to the semiconductor temperature control module. The source of the third power MOS tube is also connected to the drain of the fourth power MOS tube. The source of the fifth power MOS tube is also connected to the drain of the sixth power MOS tube. The sources of the fourth power MOS tube and the sixth power MOS tube are grounded respectively.

5. The power driving device for a semiconductor temperature control module according to claim 1, characterized in that: The monitoring and protection module includes a current monitoring circuit, a voltage monitoring circuit, a temperature monitoring circuit, a trigger circuit and a shutdown protection circuit; the current monitoring circuit and the voltage monitoring circuit are respectively connected to the current sampling circuit, and the temperature monitoring circuit is connected to the temperature sensor inside the semiconductor temperature control module; the trigger circuit is respectively connected to the current monitoring circuit, the voltage monitoring circuit, the temperature monitoring circuit and the shutdown protection circuit, and the shutdown protection circuit is connected to the H-bridge circuit of the current direction conversion module.

6. The power driving device for a semiconductor temperature control module according to claim 5, characterized in that: The current monitoring circuit includes a current shunt monitor and a first differential comparator, the current shunt monitor is connected to the current sampling circuit and the first differential comparator respectively, and the first differential comparator is connected to the trigger circuit; The voltage monitoring circuit includes a second differential comparator, and the second differential comparator is respectively connected to the current sampling circuit, the H-bridge circuit of the current direction conversion module, and the trigger circuit; The temperature monitoring circuit includes an operational amplifier and a third differential comparator, the operational amplifier is respectively connected to the temperature sensor inside the semiconductor temperature control module and the third differential comparator, and the third differential comparator is connected to the trigger circuit; wherein the first differential comparator, the second differential comparator and the third differential comparator adopt a single-channel differential comparator or a multi-channel differential comparator.

7. A semiconductor temperature control module, characterized in that A power driving device for a semiconductor temperature control module comprising any one of claims 1 to 6.

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