Organic Light-Emitting Display Device

Abstract

An organic light emitting display device includes a substrate, a light emitting structure, an undercut structure, and a functional module. The substrate includes an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region. The substrate has a groove located in the peripheral region and an opening located in the opening region. The light emitting structure is located in the display region on the substrate. The undercut structure is located inside the groove in the substrate. The undercut structure includes a sacrificial metal pattern having a first width and at least one insulating layer pattern having a second width greater than the first width. The functional module is located in the opening of the substrate.

Description

Technical Field

[0001] Example embodiments generally relate to an organic light emitting display device, and to an organic light emitting display device including a functional module located in a part of a display area. Background Art

[0002] Since flat panel display devices are light in weight and have thin features, etc., flat panel display devices are used as display devices to replace cathode ray tube display devices. Liquid crystal display devices and organic light emitting display devices are typical examples of flat panel display devices.

[0003] An organic light emitting display device may include a display area configured to display an image and a non-display area surrounding the display area configured not to display an image. For example, a plurality of light emitting structures may be arranged in the display area, and a gate driver, a data driver, a plurality of wirings, and functional modules (such as a camera module and a motion sensor) may be arranged in the non-display area. Recently, an organic light emitting display device has been developed in which an opening is formed in a part of the display area and a functional module is arranged in the opening. However, moisture and humidity, etc. may penetrate through the opening into the light emitting structures arranged in the display area adjacent to the functional module, and thus defects may occur in the organic light emitting display device. Summary of the Invention

[0004] Some example embodiments provide an organic light emitting display (“OLED”) device including a functional module located in a part of a display area.

[0005] According to some example embodiments, the OLED device includes a substrate, a light emitting structure, an undercut structure, and a functional module. The substrate includes an opening area, a peripheral area surrounding the opening area, and a display area surrounding the peripheral area. The substrate has a groove located in the peripheral area and an opening located in the opening area. The light emitting structure is located in the display area on the substrate. The undercut structure is located inside the groove in the substrate and includes a sacrificial metal pattern having a first width and at least one insulating layer pattern having a second width greater than the first width. The functional module is located in the opening of the substrate.

[0006] In an example embodiment, the undercut structure may be spaced apart from an inner wall of the groove.

[0007] In an example embodiment, the groove may have a hollow circular shape surrounding the opening of the substrate in a plan view.

[0008] In an example embodiment, the undercut structure located inside the groove may have a hollow circular shape surrounding the opening in a plan view.

[0009] In an exemplary embodiment, the substrate may include a first organic film layer, a first barrier layer, a second organic film layer, and a second barrier layer. The first barrier layer may be located on the first organic film layer. The second organic film layer may be located on the first barrier layer and may have a first opening in a peripheral region. The second barrier layer may be located on the second organic film layer and may have a second opening overlapping the first opening.

[0010] In an exemplary embodiment, a sacrificial metal pattern may be located on the first barrier layer.

[0011] In an exemplary embodiment, at least one insulating layer pattern may include a first insulating layer pattern located on the sacrificial metal pattern and a second insulating layer pattern located on the first insulating layer pattern.

[0012] In an exemplary embodiment, the first insulating layer pattern may be in the same layer as the second organic film layer, and the second insulating layer pattern may be in the same layer as the second barrier layer.

[0013] In an exemplary embodiment, the first opening and the second opening may define a groove in the substrate.

[0014] In an exemplary embodiment, the OLED device may further include a semiconductor element located between the substrate and the light-emitting structure.

[0015] In an exemplary embodiment, the semiconductor element may include an active layer, a gate insulating layer, a gate electrode, an insulating interlayer, and source and drain electrodes. The active layer may be located in a display region on the substrate. The gate insulating layer may cover the active layer in the display region on the substrate and may have a third opening exposing the groove in a peripheral region. The gate electrode may be located in the display region on the gate insulating layer. The insulating interlayer may cover the gate electrode in the display region on the gate insulating layer and may have a fourth opening overlapping the third opening in the peripheral region. The source and drain electrodes may be located in the display region on the insulating interlayer.

[0016] In an exemplary embodiment, at least one insulating layer pattern may include a third insulating layer pattern and a fourth insulating layer pattern. The third insulating layer pattern may be located on the sacrificial metal pattern and may be inside the third opening. The fourth insulating layer pattern may be located on the third insulating layer pattern and may be inside the fourth opening.

[0017] In an exemplary embodiment, the third insulating layer pattern may be in the same layer as the gate insulating layer, and the fourth insulating layer pattern may be in the same layer as the insulating interlayer.

[0018] In an exemplary embodiment, the light-emitting structure may include a lower electrode, a light-emitting layer located on the lower electrode, and an upper electrode located on the light-emitting layer.

[0019] In an exemplary embodiment, the light-emitting layer may extend on the substrate in a direction from the display area to the peripheral area, and may be interrupted by an undercut structure at a part where the groove is located.

[0020] In an exemplary embodiment, the upper electrode may extend on the light-emitting layer in a direction from the display area to the peripheral area, and may be interrupted by an undercut structure at a part where the groove is located.

[0021] In an exemplary embodiment, the light-emitting layer and the upper electrode may be at least partially located inside the groove.

[0022] In an exemplary embodiment, the light-emitting layer and the upper electrode may be located on at least a part of the undercut structure.

[0023] In an exemplary embodiment, the light-emitting layer and the upper electrode may not be in direct contact with the sacrificial metal pattern.

[0024] In an exemplary embodiment, the OLED device may further include a thin-film encapsulation structure disposed on the light-emitting structure. The thin-film encapsulation structure may include a first thin-film encapsulation layer, a second thin-film encapsulation layer, and a third thin-film encapsulation layer. The first thin-film encapsulation layer may be located on the upper electrode and may include a flexible inorganic material. The second thin-film encapsulation layer may be located on the first thin-film encapsulation layer and may include a flexible organic material. The third thin-film encapsulation layer may be located on the second thin-film encapsulation layer and may include a flexible inorganic material.

[0025] In an exemplary embodiment, each of the first thin-film encapsulation layer and the third thin-film encapsulation layer may extend on the upper electrode in a direction from the display area to the peripheral area, and may be continuous at a part where the groove is located.

[0026] In an exemplary embodiment, the functional module may be in contact with the side surface of the substrate, the side surface of the light-emitting layer, the side surface of the upper electrode, the side surface of the first thin-film encapsulation layer, and the side surface of the third thin-film encapsulation layer at a boundary between the peripheral area and the opening area.

[0027] In an exemplary embodiment, two side portions of the sacrificial metal pattern may be in direct contact with the first thin-film encapsulation layer.

[0028] In an exemplary embodiment, the groove of the substrate may include a first groove located in the peripheral area and a second groove located between the first groove and the functional module. The first groove may surround the second groove.

[0029] In an exemplary embodiment, the undercut structure may include a first undercut structure located inside the first groove and a second undercut structure located inside the second groove.

[0030] Since the OLED device according to the exemplary embodiment includes an undercut structure located inside the groove, the OLED device can prevent or mitigate the penetration or infiltration of moisture and humidity, etc., from the surrounding area into the display area and into the semiconductor element and the light-emitting structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The exemplary embodiments can be understood in more detail from the following description taken in conjunction with the accompanying drawings, in which:

[0032] Figure 1 is a perspective view showing an organic light-emitting display (“OLED”) device according to an exemplary embodiment of the present invention;

[0033] Figure 2 is a plan view showing Figure 1 the OLED device of

[0034] Figure 3 and Figure 4 are perspective views depicting the openings formed in the Figure 1 OLED device of

[0035] Figure 5 is a partial enlarged plan view showing the “A” area of the OLED device in Figure 2 ;

[0036] Figure 6 is a cross-sectional view taken along line I-I' of the OLED device in Figure 5 ;

[0037] Figures 7 to 17 is a cross-sectional view depicting a method of manufacturing an OLED device according to an exemplary embodiment of the present invention;

[0038] Figure 18 and Figure 19 are cross-sectional views depicting a method of manufacturing an OLED device according to an exemplary embodiment of the present invention;

[0039] Figure 20 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention;

[0040] Figure 21 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention;

[0041] Figure 22 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention;

[0042] Figure 23 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention;

[0043] Figure 24is a plan view for describing a touch screen structure included in an OLED device in Figure 23 ;

[0044] Figure 25 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention; and

[0045] Figure 26 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION

[0046] Hereinafter, an organic light-emitting display (“OLED”) device according to an exemplary embodiment of the present invention and a method of manufacturing the OLED device will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements.

[0047] Figure 1 is a perspective view showing an OLED device according to an exemplary embodiment of the present invention. Figure 2 is showing Figure 1 of the OLED device. Figure 3 and Figure 4 are perspective views depicting openings formed in the Figure 1 OLED device.

[0048] Referring to Figure 1 , Figure 2 , Figure 3 and Figure 4 , the OLED device 100 may include a functional module 700 and the like. The OLED device 100 may have a first surface S1 for displaying an image and a second surface S2 opposite to the first surface S1. The functional module 700 may be disposed on one side (e.g., the first surface S1) of the OLED device 100.

[0049] As Figure 2 shown, the OLED device 100 may include a display area 10, an opening area 20, a peripheral area 30, and a pad area 40. Herein, the peripheral area 30 may substantially surround the opening area 20, and the display area 10 may substantially surround the peripheral area 30. Alternatively, the display area 10 may not completely surround the peripheral area 30. As Figure 3 and Figure 4As shown, the OLED device 100 may include an opening 910 formed in the opening region 20. The pad region 40 may be located on one side or at one end of the display region 10. A plurality of pad electrodes may be arranged in the pad region 40, and the pad electrodes may be electrically connected to an external device. In other exemplary embodiments, the OLED device 100 may further include a bending region located between the display region 10 and the pad region 40. For example, the bending region may be bent about an axis with respect to a first direction D1 parallel to the upper surface of the OLED device 100, and the pad region 40 may be located on the bottom surface of the OLED device 100.

[0050] The display region 10 may include a plurality of sub-pixel regions (not shown). The sub-pixel regions may be arranged in the display region 10 to have a matrix form as a whole. Sub-pixel circuits (such as Figure 6 the semiconductor element 250 in ) may be arranged in each of the sub-pixel regions of the display region 10, and organic light-emitting diodes (such as Figure 6 the light-emitting structure 200 in ) may be arranged on the sub-pixel circuits. An image may be displayed on the display region 10 through the sub-pixel circuits and the organic light-emitting diodes.

[0051] For example, a first sub-pixel circuit, a second sub-pixel circuit, and a third sub-pixel circuit may be arranged in the sub-pixel region, and a first organic light-emitting diode, a second organic light-emitting diode, and a third organic light-emitting diode may be arranged on the first sub-pixel circuit to the third sub-pixel circuit, respectively. The first sub-pixel circuit may be connected to the first organic light-emitting diode capable of emitting red light, the second sub-pixel circuit may be connected to the second organic light-emitting diode capable of emitting green light, and the third sub-pixel circuit may be connected to the third organic light-emitting diode capable of emitting blue light.

[0052] In an exemplary embodiment, the first organic light-emitting diode may be arranged to overlap with the first sub-pixel circuit, the second organic light-emitting diode may be arranged to overlap with the second sub-pixel circuit, and the third organic light-emitting diode may be arranged to overlap with the third sub-pixel circuit. Alternatively, the first organic light-emitting diode may be arranged to overlap with a part of the first sub-pixel circuit and a part of a sub-pixel circuit different from the first sub-pixel circuit, the second organic light-emitting diode may be arranged to overlap with a part of the second sub-pixel circuit and a part of a sub-pixel circuit different from the second sub-pixel circuit, and the third organic light-emitting diode may be arranged to overlap with a part of the third sub-pixel circuit and a part of a sub-pixel circuit different from the third sub-pixel circuit.

[0053] In other words, a scheme such as an RGB stripe type in which rectangles having the same size or substantially the same size are sequentially arranged, an S stripe type including a blue organic light-emitting diode having a relatively large area, a WRGB type further including a white organic light-emitting diode, and / or PenTile having an RG-GB repeating pattern can be used to arrange the first to third organic light-emitting diodes.

[0054] In addition, at least one driving transistor, at least one switching transistor, at least one capacitor, or the like can be arranged in each of the sub-pixel regions.

[0055] Although the display area 10 of the present disclosure has been described as having a rectangular shape when viewed from the top, the shape is not limited thereto. For example, when viewed from the top (e.g., in a plan view), the display area 10 may have a triangular shape, a rhombus shape, a polygonal shape, a circular shape, an orbital shape, or an elliptical shape.

[0056] The functional module 700 may be arranged in the opening 910. For example, the functional module 700 may include a camera module capable of capturing (or recognizing) an image of an object, a face recognition sensor module for sensing a user's face, a pupil recognition sensor module for sensing a user's pupil, an acceleration sensor module and a geomagnetic sensor module for determining the movement of the OLED device 100, a proximity sensor module and an infrared sensor module for sensing the proximity of the user and / or an object to the front of the OLED device 100, and / or an illuminance sensor module for measuring the luminance when, for example, placed in a bag. In other exemplary embodiments, a vibration module for indicating an input alert, a speaker module for outputting sound, or the like may be arranged in the opening 910.

[0057] Although the shapes of the opening region 20 and the surrounding region 30 of the present invention have been described as having a circular shape when viewed from the top, the shapes are not limited thereto. For example, when viewed from the top (e.g., in a plan view), the shapes of the opening region 20 and the surrounding region 30 may have a triangular shape, a rhombus shape, a polygonal shape, a rectangular shape, an orbital shape, or an elliptical shape.

[0058] Figure 5 is a partially enlarged plan view of the "A" region of the OLED device in Figure 2 is a cross-sectional view taken along line I-I' of the OLED device in Figure 6 is along Figure 5 of the OLED device in

[0059] Reference Figure 5 and Figure 6, the OLED device 100 may include a substrate 110, an undercut structure 400, a semiconductor element 250, a planarization layer 270, a light-emitting structure 200, a pixel definition layer 310, a thin-film encapsulation structure 450, and a functional module 700. In some embodiments, the substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Since the OLED device 100 has a display area 10, an opening area 20, a peripheral area 30, and a pad area 40, the substrate 110 may also be divided into a display area 10, an opening area 20, a peripheral area 30, and a pad area 40. Additionally, in some embodiments, the undercut structure 400 may include a sacrificial metal pattern 405, a first insulating layer pattern 410, a second insulating layer pattern 420, a third insulating layer pattern 430, and a fourth insulating layer pattern 440, and the semiconductor element 250 may include an active layer 130, a gate insulating layer 150, a gate electrode 170, an insulating interlayer 190, a source electrode 210, and a drain electrode 230. Furthermore, the light-emitting structure 200 may include a lower electrode 290, a light-emitting layer 330, and an upper electrode 340, and the thin-film encapsulation structure 450 may include a first thin-film encapsulation layer 451, a second thin-film encapsulation layer 452, and a third thin-film encapsulation layer 453.

[0060] In an exemplary embodiment, the substrate 110 may further include a groove 930 formed in the peripheral area 30, and the undercut structure 400 may be disposed inside the groove 930 and spaced apart from the inner wall of the groove 930. Additionally, each of the light-emitting layer 330 and the upper electrode 340 may be spaced apart by the undercut structure 400 inside the groove 930. In other words, each of the light-emitting layer 330 and the upper electrode 340 may be interrupted by the undercut structure 400 inside the groove 930. Accordingly, the OLED device 100 includes a light-emitting layer 330 and an upper electrode 340 interrupted by the undercut structure 400 inside the groove 930, such that penetration or infiltration of moisture and humidity, etc. into the semiconductor element 250 and the light-emitting structure 200 can be prevented. Furthermore, the substrate 110 may further include an opening 910 formed in the opening area 20, and the functional module 700 may be disposed in the opening 910 (see Figure 16 ).

[0061] The first organic film layer 111 may be provided. The first organic film layer 111 may include a flexible organic material. For example, the first organic film layer 111 may include a random copolymer or a block copolymer. Additionally, the first organic film layer 111 may have high transparency, a low coefficient of thermal expansion, and a high glass transition temperature. Since the first organic film layer 111 contains an imide group, its heat resistance, chemical resistance, wear resistance, and electrical properties may be high. In an exemplary embodiment, the first organic film layer 111 may include polyimide.

[0062] The first barrier layer 112 may be entirely disposed on the first organic film layer 111. The first barrier layer 112 may block moisture that permeates or seeps through the first organic film layer 111. The first barrier layer 112 may include a flexible inorganic material. In an exemplary embodiment, the first barrier layer 112 may include silicon oxide or silicon nitride, etc. For example, the first barrier layer 112 may include silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), silicon oxycarbide (SiO x C y ), silicon carbonitride (SiC x N y ), aluminum oxide (AlO x ), aluminum nitride (AlN x ), tantalum oxide (TaO x ), hafnium oxide (HfO x ), zirconium oxide (ZrO x ), and titanium oxide (TiO x ), etc.

[0063] The second organic film layer 113 may be disposed on (e.g., directly disposed on) the first barrier layer 112. In an exemplary embodiment, the second organic film layer 113 may have a first opening 701 in the peripheral region 30 (see Figure 11 ). For example, the first opening 701 may expose the upper surface of the first barrier layer 112 located in the peripheral region 30. The second organic film layer 113 may include a flexible organic material. For example, the second organic film layer 113 may include a random copolymer or a block copolymer. In an exemplary embodiment, the second organic film layer 113 may include polyimide. Alternatively, a part of the second organic film layer 113 located in the peripheral region 30 may be partially removed such that a trench is formed in the second organic film layer 113 located in the peripheral region 30 (e.g., the second organic film layer 113 may include a trench in the peripheral region 30 that does not completely extend through the second organic film layer 113). In such an embodiment, the upper surface of the first barrier layer 112 located in the peripheral region 30 may not be exposed.

[0064] The second barrier layer 114 may be disposed on (e.g., directly disposed on) the second organic film layer 113. In an exemplary embodiment, the second barrier layer 114 may have a second opening 702 that overlaps with the first opening 701 in the peripheral region 30 (see Figure 11 ). In other words, the second opening 702 of the second barrier layer 114 may expose the upper surface of the first barrier layer 112 located in the peripheral region 30. The first opening 701 and the second opening 702 may be defined as a recess 930 in the substrate 110 (seeFigure 11 )。 For example, as Figure 5 shown, when viewed from the top, the groove 930 may have a hollow circular shape around the opening 910 of the substrate 110.

[0065] The second barrier layer 114 may block or at least mitigate moisture that penetrates or permeates through the second organic film layer 113. The second barrier layer 114 may include a flexible inorganic material. In an exemplary embodiment, the second barrier layer 114 may include silicon oxide or silicon nitride, etc.

[0066] Accordingly, the substrate 110 including the first organic film layer 111, the first barrier layer 112, the second organic film layer 113, and the second barrier layer 114 can be protected from moisture.

[0067] Although the substrate 110 has been described as having four layers, the configuration of the present disclosure is not limited thereto. For example, in other exemplary embodiments, the substrate 110 may include a single layer or at least two layers.

[0068] A buffer layer (not shown) may be disposed on (e.g., directly disposed on) the substrate 110 (such as the second barrier layer 114). For example, the buffer layer may be entirely disposed on the substrate 110, in the display region 10 and the surrounding region 30, and the buffer layer may have an opening overlapping with the groove 930 of the substrate 110. The buffer layer can prevent metal atoms or impurities from diffusing from the substrate 110 to the semiconductor element 250 and the light emitting structure 200, and enables a substantially uniform active layer 130 to be obtained by adjusting the heat transfer rate during the crystallization process for forming the active layer 130. Additionally, when the surface of the substrate 110 is uneven, the buffer layer can be used to improve the flatness of the surface of the substrate 110. Depending on the type of the substrate 110, at least two buffer layers may be provided on the substrate 110, or the buffer layer may not be provided. For example, the buffer layer may include an organic material or an inorganic material.

[0069] The active layer 130 may be disposed in the display region 10 on the substrate 110. The active layer 130 may include an oxide semiconductor, an inorganic semiconductor (such as amorphous silicon and polycrystalline silicon), or an organic semiconductor, etc. The active layer 130 may have a source region and a drain region.

[0070] The gate insulating layer 150 may be disposed on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display region 10 on the substrate 110, may extend in a direction from the display region 10 to the opening region 20 (such as the first direction D1), and may be disposed in the surrounding region 30 on the substrate 110. In an exemplary embodiment, the gate insulating layer 150 may have a third opening 703 overlapping with the groove 930 of the substrate 110 in the surrounding region 30 (see Figures 9 to 11)。In other words, the gate insulating layer 150 can expose the upper surface of the first barrier layer 112 located in the peripheral region 30 through the third opening 703 (see Figure 11 ). For example, the gate insulating layer 150 can sufficiently cover the active layer 130 in the display region 10 on the substrate 110 and can have a substantially flat upper surface without creating a step around the active layer 130. Alternatively, the gate insulating layer 150 can cover the active layer 130 in the display region 10 on the substrate 110 and can be arranged to have a uniform thickness along the contour of the active layer 130 such that a step is formed around the active layer 130. The gate insulating layer 150 can include a silicon compound or a metal oxide, etc. In some exemplary embodiments, the gate insulating layer 150 can have a multi-layer structure including multiple insulating layers. For example, the insulating layers can have different thicknesses or include different materials.

[0071] The gate electrode 170 can be arranged in the display region 10 on the gate insulating layer 150. The gate electrode 170 can be arranged on a part of the gate insulating layer 150 below which the active layer 130 is located. The gate electrode 170 can include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These can be used alone or in combination with each other. Alternatively, the gate electrode 170 can include a multi-layer structure including multiple layers.

[0072] The insulating interlayer 190 can be arranged on (e.g., directly on) the gate electrode 170. The insulating interlayer 190 can cover the gate electrode 170 in the display region 10 on the substrate 110, can extend in the first direction D1, and can be arranged in the peripheral region 30 on the substrate 110. In an exemplary embodiment, the insulating interlayer 190 can have a fourth opening 704 overlapping with the third opening 703 in the peripheral region 30 (see Figures 9 to 11 ). In other words, the insulating interlayer 190 can expose the upper surface of the first barrier layer 112 located in the peripheral region 30 through the fourth opening 704 (see Figure 11 ). For example, the insulating interlayer 190 can sufficiently cover the gate electrode 170 in the display region 10 on the gate insulating layer 150 and can have a substantially flat upper surface without creating a step around the gate electrode 170. Alternatively, the insulating interlayer 190 can cover the gate electrode 170 in the display region 10 on the gate insulating layer 150 and can be arranged to have a uniform thickness along the contour of the gate electrode 170 such that a step is formed around the gate electrode 170. The insulating interlayer 190 can include a silicon compound or a metal oxide, etc. In some exemplary embodiments, the insulating interlayer 190 can have a multi-layer structure including multiple insulating layers. For example, the insulating layers can have different thicknesses or include different materials.

[0073] The source electrode 210 and the drain electrode 230 may be disposed in the display area 10 on the insulating interlayer 190. The source electrode 210 may be connected to the source region of the active layer 130 via a contact hole formed by removing a first portion of the gate insulating layer 150 and the insulating interlayer 190, and the drain electrode 230 may be connected to the drain region of the active layer 130 via a contact hole formed by removing a second portion of the gate insulating layer 150 and the insulating interlayer 190. Each of the source electrode 210 and the drain electrode 230 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. In other exemplary embodiments, each of the source electrode 210 and the drain electrode 230 may have a multilayer structure including a plurality of layers.

[0074] Accordingly, the semiconductor element 250 including the active layer 130, the gate insulating layer 150, the gate electrode 170, the insulating interlayer 190, the source electrode 210, and the drain electrode 230 may be disposed between the substrate 110 and the light-emitting structure 200.

[0075] Although the semiconductor element 250 has been described as having an upper gate structure, the configuration of the present invention is not limited thereto. For example, the semiconductor element 250 may have a lower gate structure or a double gate structure, etc.

[0076] In addition, although the OLED device 100 has been described as including one semiconductor element, the configuration of the present invention is not limited thereto. For example, the OLED device 100 may include at least one semiconductor element and at least one storage capacitor.

[0077] In some embodiments, the sacrificial metal pattern 405 may be disposed inside the groove 930 of the substrate 110. In other words, the sacrificial metal pattern 405 may be disposed on the upper surface of the first barrier layer 112 exposed through the first opening 701 of the second organic film layer 113, the second opening 702 of the second barrier layer 114, the third opening 703 of the gate insulating layer 150, and the fourth opening 704 of the insulating interlayer 190. Alternatively, the sacrificial metal pattern 405 may be disposed on the first organic film layer 111, the second organic film layer 113, the second barrier layer 114, or the gate insulating layer 150.

[0078] In an exemplary embodiment, the sacrificial metal pattern 405 may have a first width W1 and may be spaced apart from the inner wall of the groove 930 (see Figure 11)。In addition, the sacrificial metal pattern 405 may be spaced apart from the light-emitting layer 330 and the upper electrode 340 disposed in the groove 930 (or the surrounding area 30). In other words, the sacrificial metal pattern 405 may not be in direct contact with the light-emitting layer 330 and the upper electrode 340. Further, the top surface of the sacrificial metal pattern 405 may be in contact with the first insulating layer pattern 410, the bottom surface of the sacrificial metal pattern 405 may be in contact with the first barrier layer 112, and both side surfaces of the sacrificial metal pattern 405 may be in direct contact with the first thin film encapsulation layer 451 (see Figure 14 ).

[0079] The sacrificial metal pattern 405 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. For example, the sacrificial metal pattern 405 may include gold (Au), silver (Ag), aluminum (Al), tungsten (W), copper (Cu), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), an aluminum-containing alloy, aluminum nitride (AlN x ), a silver-containing alloy, tungsten nitride (WN x ), a copper-containing alloy, a molybdenum-containing alloy, titanium nitride (TiN x ), tantalum nitride (TaN x ), strontium ruthenium oxide (SrRu x O y ), zinc oxide (ZnO x ), indium tin oxide (ITO), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ), or indium zinc oxide (IZO), etc. These may be used alone or in combination with each other. In an exemplary embodiment, the sacrificial metal pattern 405 may include a material that is etched by an etchant used for patterning the lower electrode 290 (such as an etchant used in the process of selectively etching the initial lower electrode to form the lower electrode 290). For example, the sacrificial metal pattern 405 may be composed of molybdenum. In other exemplary embodiments, the sacrificial metal pattern 405 may have a multi-layer structure including multiple layers.

[0080] The first insulating layer pattern 410 may be disposed on (e.g., directly disposed on) the sacrificial metal pattern 405. The first insulating layer pattern 410 may be disposed inside the groove 930. In an exemplary embodiment, the first insulating layer pattern 410 may have a second width W2 greater than the first width W1 of the sacrificial metal pattern 405 and may be spaced apart from the inner wall of the groove 930 (see Figure 11) Additionally, the first insulating layer pattern 410 may be on the same layer as the second organic film layer 113 in the display device 100. The first insulating layer pattern 410 may include a flexible organic material. For example, the first insulating layer pattern 410 may include a random copolymer or a block copolymer. In an exemplary embodiment, the first insulating layer pattern 410 may include polyimide.

[0081] The second insulating layer pattern 420 may be disposed (e.g., directly disposed) on the first insulating layer pattern 410. The second insulating layer pattern 420 may be disposed inside the groove 930. In an exemplary embodiment, the width of the second insulating layer pattern 420 may be greater than the first width W1 of the sacrificial metal pattern 405 and may be spaced apart from the inner wall of the groove 930 (see Figure 11 ). Additionally, the second insulating layer pattern 420 may be on the same layer as the second barrier layer 114 in the display device 100. Alternatively, the width of the second insulating layer pattern 420 may be equal to or less than the first width W1 of the sacrificial metal pattern 405. The second insulating layer pattern 420 may include a flexible inorganic material. In an exemplary embodiment, the second insulating layer pattern 420 may include silicon oxide, silicon nitride, etc.

[0082] The third insulating layer pattern 430 may be disposed (e.g., directly disposed) on the second insulating layer pattern 420. The third insulating layer pattern 430 may be disposed inside the third opening 703. In an exemplary embodiment, the width of the third insulating layer pattern 430 may be greater than the first width W1 of the sacrificial metal pattern 405 and may be spaced apart from the inner wall of the third opening 703 (see Figure 11 ). Additionally, the third insulating layer pattern 430 may be on the same layer as the gate insulating layer 150 in the display device 100. Alternatively, the width of the third insulating layer pattern 430 may be equal to or less than the first width W1 of the sacrificial metal pattern 405. The third insulating layer pattern 430 may include a silicon compound, a metal oxide, etc.

[0083] The fourth insulating layer pattern 440 may be disposed (e.g., directly disposed) on the third insulating layer pattern 430. The fourth insulating layer pattern 440 may be disposed inside the fourth opening 704. In an exemplary embodiment, the width of the fourth insulating layer pattern 440 may be greater than the first width W1 of the sacrificial metal pattern 405 and may be spaced apart from the inner wall of the fourth opening 704 (see Figure 11 ). Additionally, the fourth insulating layer pattern 440 may be on the same layer as the insulating interlayer 190 in the display device 100. Alternatively, the width of the fourth insulating layer pattern 440 may be equal to or less than the first width W1 of the sacrificial metal pattern 405. The fourth insulating layer pattern 440 may include a silicon compound, a metal oxide, etc.

[0084] Accordingly, the undercut structure 400 including the sacrificial metal pattern 405, the first insulating layer pattern 410, the second insulating layer pattern 420, the third insulating layer pattern 430, and the fourth insulating layer pattern 440 can be disposed inside the groove 930. Since the undercut structure 400 is disposed inside the groove 930, the undercut structure 400 may also have a hollow circular shape surrounding the opening 910 when viewed from the top (e.g., in a plan view) (see Figure 5 ).

[0085] In an exemplary embodiment of the present disclosure, since the sacrificial metal pattern 405 has a width smaller than the width of the first insulating layer pattern 410, the groove 930 may have an undercut shape (e.g., the groove 930 extends under a portion of the first insulating layer pattern 410). The groove 930 (such as the first opening 701 and the second opening 702), the third opening 703, the fourth opening 704, and the undercut structure 400 can be used as a shielding pattern to shield moisture and / or humidity from penetrating or seeping into the display area 10 from the opening area 20. In other exemplary embodiments, a plurality of shielding patterns may be formed between the groove 930 and the functional module 700, and the shielding pattern may be formed between the light-emitting structure 200 (which is adjacent to the boundary between the display area 10 and the surrounding area 30) and the groove 930.

[0086] The planarization layer 270 can be disposed on the insulating interlayer 190, the source electrode 210, and the drain electrode 230. The planarization layer 270 can cover the source electrode 210 and the drain electrode 230 on the insulating interlayer 190 in the display area 10, and the planarization layer 270 may not be disposed in the surrounding area 30. In other words, the planarization layer 270 can be disposed only in the display area 10 on the insulating interlayer 190. For example, the planarization layer 270 may have a relatively large thickness in the display area 10. In such an embodiment, the planarization layer 270 may have a substantially planar upper surface, and a planarization process may be added with respect to the planarization layer 270 to achieve the above-mentioned planar upper surface of the planarization layer 270. Alternatively, the planarization layer 270 can be disposed to have a uniform thickness along the contours of the source electrode 210 and the drain electrode 230 in the display area 10 on the insulating interlayer 190, such that one or more steps are formed. The planarization layer 270 can be formed of an organic material or an inorganic material. In an exemplary embodiment, the planarization layer 270 may include an organic material such as a photoresist, a polyacrylic resin, a polyimide resin, a polyamide resin, a silicone resin, an acrylic resin, and an epoxy resin.

[0087] The lower electrode 290 may be disposed (e.g., directly disposed) in the display area 10 on the planarization layer 270. The lower electrode 290 may be connected to the drain electrode 230 via a contact hole formed by removing a part of the planarization layer 270, and the lower electrode 290 may be electrically connected to the semiconductor element 250. The lower electrode 290 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. In an exemplary embodiment, the lower electrode 290 may have a multilayer structure including multiple layers. For example, the lower electrode 290 may have a multilayer structure in which indium tin oxide, silver, and indium tin oxide are sequentially stacked.

[0088] The pixel defining layer 310 (see Figure 12 ) may be disposed (e.g., directly disposed) in the display area 10 on the planarization layer 270, and may not be disposed in the peripheral area 30. In other words, the pixel defining layer 310 may be disposed only in the display area 10 on the planarization layer 270. For example, the pixel defining layer 310 may expose a part of the upper surface of the lower electrode 290 while covering two side portions of the lower electrode 290. The pixel defining layer 310 may be formed of an organic material or an inorganic material. In an exemplary embodiment, the pixel defining layer 310 may include an organic material.

[0089] The light emitting layer 330 may be disposed on the pixel defining layer 310 and the lower electrode 290 in the display area 10, may extend in the first direction D1, and may be disposed in the peripheral area 30 on the substrate 110. In an exemplary embodiment, the light emitting layer 330 may be partially disposed inside the groove 930, and may be spaced apart from another part of the light emitting layer 330 in the depth direction (e.g., the direction from the second barrier layer 114 to the first organic film layer 111) at a part where the groove 930 is located, by the undercut structure 400. In other words, the light emitting layer 330 may be interrupted by the undercut structure 400 in the peripheral area 30. That is to say, the light emitting layer 330 may be separated or divided by the groove 930, the third opening 703, the fourth opening 704, and the undercut structure 400 in the peripheral area 30.

[0090] Conversely, if the undercut structure 400 including the sacrificial metal pattern 405 having the first width W1 is not provided in the groove 930, the light-emitting layer 330 will be continuously arranged at a part where the groove 930 is formed, and the light-emitting layer 330 can be used as a permeation path for moisture and / or humidity. In other words, a part of the light-emitting layer 330 (e.g., the side end part of the light-emitting layer 330) will be exposed in the opening area 20, and moisture and / or humidity can permeate into the exposed part of the light-emitting layer 330. In this case, the semiconductor element 250 and the light-emitting structure 200 arranged in the display area 10 positioned adjacent to the surrounding area 30 may be damaged by moisture and / or humidity. However, in the exemplary embodiment of the present invention, since the OLED device 100 includes the undercut structure 400, the light-emitting layer 330 can be separated or divided inside the groove 930. In other words, the light-emitting layer 330 is separated or divided inside the groove 930 so that the moisture permeation path of the light-emitting layer 330 can be blocked. Therefore, even when the light-emitting layer 330 is arranged in the surrounding area 30, pixel defects of the OLED device 100 may not occur.

[0091] The light-emitting layer 330 may have a multilayer structure including an organic light-emitting or emitting layer (“EML”), a hole injection layer (“HIL”), a hole transport layer (“HTL”), an electron transport layer (“ETL”), and an electron injection layer (“EIL”), etc. In the exemplary embodiment, the EML, HIL, HTL, ETL, and EIL may be arranged in the surrounding area 30. In other exemplary embodiments, the HIL, HTL, ETL, and EIL except for the EML may be arranged in the surrounding area 30.

[0092] The EML of the light-emitting layer 330 may be formed of at least one of light-emitting materials capable of emitting light of different colors (such as red, green, and blue) according to the sub-pixels. In some embodiments, the EML of the light-emitting layer 330 may be formed by laminating a plurality of light-emitting materials capable of generating different colors of light such as red, green, and blue so that white light can be emitted as a whole. In such an embodiment, a color filter may also be arranged on the light-emitting layer 330 arranged on the lower electrode 290. The color filter may include at least one of a red color filter, a green color filter, and a blue color filter. Alternatively, the color filter may also include at least one of a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may include a photosensitive resin or a color photoresist.

[0093] The upper electrode 340 may overlap with the light-emitting layer 330 in the display region 10, may extend in the first direction D1, and may be disposed in the peripheral region 30 on the light-emitting layer 330. In an exemplary embodiment, the upper electrode 340 may be partially disposed inside the groove 930 and may be spaced apart in the depth direction from another portion of the upper electrode 340 at the portion where the groove 930 is located (e.g., the upper electrode 340 may be separated or divided at the groove 930). In other words, the upper electrode 340 may be interrupted by the undercut structure 400 in the peripheral region 30 of the upper electrode 340. That is to say, a portion of the upper electrode 340 may be separated or divided by the groove 930, the third opening 703, the fourth opening 704, and the undercut structure 400 in the peripheral region 30.

[0094] Conversely, if the undercut structure 400 including the sacrificial metal pattern 405 having the first width W1 is not provided in the groove 930, the upper electrode 340 will be continuously disposed at the portion where the groove 930 is formed, and the upper electrode 340 may be used as a penetration path for moisture and / or humidity. In other words, a portion of the upper electrode 340 (e.g., the side end portion of the upper electrode 340) will be exposed in the opening region 20, and moisture and / or humidity may penetrate into the exposed portion of the upper electrode 340. In this case, the semiconductor element 250 and the light-emitting structure 200 in the display region 10 positioned adjacent to the peripheral region 30 may be damaged by moisture and / or humidity. However, in the exemplary embodiment of the present disclosure, since the OLED device 100 includes the undercut structure 400, the upper electrode 340 may be separated or divided at the groove 930. In other words, the upper electrode 340 is separated or divided inside the groove 930, so that the moisture penetration path of the upper electrode 340 can be blocked. Therefore, even when the upper electrode 340 is disposed in the peripheral region 30, pixel defects of the OLED device 100 may not occur.

[0095] The upper electrode 340 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. In other exemplary embodiments, the upper electrode 340 may have a multilayer structure including multiple layers.

[0096] Therefore, the light-emitting structure 200 including the lower electrode 290, the light-emitting layer 330, and the upper electrode 340 can be protected from the influence of moisture.

[0097] A capping layer (not shown) may be disposed on the upper electrode 340. The capping layer may overlap with the upper electrode 340 in the display area 10, may extend in the first direction D1, and may be disposed in the peripheral area 30 on the upper electrode 340. In an exemplary embodiment, the capping layer may be partially disposed inside the groove 930 and may be spaced apart in the depth direction from another part of the capping layer at the part where the groove 930 is located. In other words, the capping layer may be interrupted by the undercut structure 400 in the peripheral area 30. That is, the capping layer may be separated or divided by the groove 930, the third opening 703, the fourth opening 704, and the undercut structure 400 at the peripheral area 30.

[0098] Conversely, if the groove 930 does not have the undercut structure 400 including the sacrificial metal pattern 405 having the first width W1, the capping layer will be continuous at the part where the groove 930 is formed, and the capping layer may be used as a permeation path for moisture and / or humidity. In other words, a part of the capping layer (e.g., the side end part of the capping layer) will be exposed in the opening area 20, and moisture and / or humidity may permeate into the exposed part of the capping layer. In this case, the semiconductor element 250 and the light emitting structure 200 in the display area 10 located adjacent to the peripheral area 30 may be damaged by moisture and / or humidity. However, in the exemplary embodiment of the present invention, since the OLED device 100 includes the undercut structure 400, the capping layer may be separated or divided at the groove 930. That is, the capping layer is separated or divided inside the groove 930, so that the moisture permeation path of the capping layer can be blocked. Therefore, even when the capping layer is disposed in the peripheral area 30, pixel defects of the OLED device 100 may not occur.

[0099] The capping layer may protect the light emitting structure 200 and may include an organic material or an inorganic material. In an exemplary embodiment, the capping layer may include an organic material such as a triamine derivative, an arylenediamine derivative, 4,4'-N,N'-dicarbazole-biphenyl (4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP)), and tris(8-hydroxyquinoline)aluminum (Alq3).

[0100] The first thin film encapsulation layer 451 may be disposed in the display area 10 and the peripheral area 30 on the upper electrode 340. The first thin film encapsulation layer 451 may cover the upper electrode 340 in the display area 10, may be arranged to have a uniform thickness along the contour of the upper electrode 340, and may extend to the peripheral area 30. The first thin film encapsulation layer 451 may be arranged along the contour of the upper electrode 340 in the peripheral area 30. In other words, the first thin film encapsulation layer 451 may be continuously disposed at the portion where the groove 930 is formed. In an exemplary embodiment, the first thin film encapsulation layer 451 may completely cover the groove 930 and the undercut structure 400. In other words, the first thin film encapsulation layer 451 may be in direct contact with two side portions of the sacrificial metal pattern 405. The first thin film encapsulation layer 451 may prevent the light-emitting structure 200 from deteriorating due to the penetration of moisture, oxygen, or the like. Additionally, the first thin film encapsulation layer 451 may also be used to protect the light-emitting structure 200 from the impact of external shocks. The first thin film encapsulation layer 451 may include a flexible inorganic material.

[0101] The second thin film encapsulation layer 452 may be disposed in the display area 10 on the first thin film encapsulation layer 451, and the second thin film encapsulation layer 452 may not be disposed in the peripheral area 30. In other words, the second thin film encapsulation layer 452 may be disposed only in the display area 10. Alternatively, the second thin film encapsulation layer 452 may be disposed in a part of the peripheral area 30. The second thin film encapsulation layer 452 may improve the flatness of the OLED device 100 and protect the light-emitting structure 200. The second thin film encapsulation layer 452 may include a flexible organic material.

[0102] The third thin film encapsulation layer 453 may be disposed in the display area 10 on the second thin film encapsulation layer 452 and in the peripheral area 30 on the first thin film encapsulation layer 451. The third thin film encapsulation layer 453 may cover the second thin film encapsulation layer 452 in the display area 10, may be arranged to have a uniform thickness along the contour of the second thin film encapsulation layer 452, and may extend to the peripheral area 30. The third thin film encapsulation layer 453 may be arranged along the contour of the first thin film encapsulation layer 451 in the peripheral area 30. In other words, the third thin film encapsulation layer 453 may be continuous at the portion where the groove 930 is formed. The third thin film encapsulation layer 453 may, together with the first thin film encapsulation layer 451, prevent the light-emitting structure 200 from deteriorating due to the penetration of moisture, oxygen, or the like. Additionally, together with the first thin film encapsulation layer 451 and the second thin film encapsulation layer 452, the third thin film encapsulation layer 453 may also be used to protect the light-emitting structure 200 from the impact of external shocks. The third thin film encapsulation layer 453 may include a flexible inorganic material.

[0103] Accordingly, in some embodiments, the thin film encapsulation structure 450 may include a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453. Alternatively, the thin film encapsulation structure 450 may be a five-layer structure laminated with the first to fifth thin film encapsulation layers or a seven-layer structure laminated with the first to seventh thin film encapsulation layers.

[0104] The functional module 700 may be disposed in the opening region 20. In an exemplary embodiment, the functional module 700 may be at the boundary between the surrounding region 30 and the opening region 20 and in contact with the side surface of the substrate 110, the side surface of the light-emitting layer 330, the side surface of the upper electrode 340, the side surface of the first thin film encapsulation layer 451, and the side surface of the third thin film encapsulation layer 453. For example, in one or more embodiments, the functional module 700 may include a camera module, a face recognition sensor module, a pupil recognition sensor module, an acceleration sensor module and a geomagnetic sensor module, a proximity sensor module and an infrared sensor module, an illuminance sensor module, a vibration module, and / or a speaker module.

[0105] The OLED device 100 according to an exemplary embodiment of the present disclosure includes an undercut structure 400 disposed inside the groove 930, such that the OLED device 100 can prevent or at least mitigate the penetration of moisture and humidity, etc., from the surrounding region 30 into the display region 10 and into the semiconductor element 250 and the light-emitting structure 200.

[0106] Figures 7 to 17 is a cross-sectional view illustrating a method of manufacturing an OLED device according to an exemplary embodiment of the present invention.

[0107] Reference Figure 7 , a rigid glass substrate 105 may be provided or obtained. The first organic film layer 111 may be formed on the glass substrate 105. The first organic film layer 111 may be completely formed on the glass substrate 105 and may be formed by using a flexible organic material such as polyimide.

[0108] The first barrier layer 112 may be completely formed on the first organic film layer 111. The first barrier layer 112 may block or at least mitigate the moisture that penetrates or seeps through the first organic film layer 111. The first barrier layer 112 may be formed by using a flexible inorganic material such as silicon oxide and silicon nitride. For example, the first barrier layer 112 may include SiO x , SiN x , SiO x N y , SiO x C y , SiC x N y , AlO x , AlNx , TaO x , HfO x , ZrO x , TiO x etc.

[0109] The initial sacrificial metal pattern 401 may be formed in the peripheral region 30 on the first barrier layer 112. The initial sacrificial metal pattern 401 may be formed by using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc. For example, the initial sacrificial metal pattern 401 may include Au, Ag, Al, W, Cu, Pt, Ni, Ti, Pd, Mg, Ca, Li, Cr, Ta, Mo, Sc, Nd, Ir, an alloy containing aluminum, AlN x , an alloy containing silver, WN x , an alloy containing copper, an alloy containing molybdenum, TiN x , TaN x , SrRu x O y , ZnO x , ITO, SnO x , InO x , GaO x , or IZO, etc. These may be used alone or in combination with each other. In an exemplary embodiment, the initial sacrificial metal pattern 401 may include a material that is etched by an etchant (such as an etchant used in the process of selectively etching the initial lower electrode to form the lower electrode) for patterning the lower electrode to be described later. For example, the initial sacrificial metal pattern 401 may be composed of molybdenum. In other exemplary embodiments, the initial sacrificial metal pattern 401 may have a multi-layer structure including multiple layers.

[0110] Referring Figure 8 , the second organic film layer 113 may be formed on the first barrier layer 112. The second organic film layer 113 may be completely formed on the first barrier layer 112 and may be formed by using a flexible organic material such as polyimide. For example, the second organic film layer 113 may sufficiently cover the initial sacrificial metal pattern 401 in the peripheral region 30 on the first barrier layer 112 and may have a substantially flat upper surface without generating a step around the initial sacrificial metal pattern 401. Alternatively, the second organic film layer 113 may cover the initial sacrificial metal pattern 401 in the peripheral region 30 on the first barrier layer 112 and may be formed to have a uniform thickness along the contour of the initial sacrificial metal pattern 401 such that a step is formed around the initial sacrificial metal pattern 401.

[0111] The second barrier layer 114 may be completely formed on the second organic film layer 113. The second barrier layer 114 may block or at least mitigate moisture that permeates or seeps through the second organic film layer 113. The second barrier layer 114 may be formed by using a flexible inorganic material such as silicon oxide and silicon nitride.

[0112] Thus, in one or more embodiments, the substrate 110 may be formed to include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114.

[0113] Since the substrate 110 is thin and flexible, the substrate 110 may be formed on the rigid glass substrate 105 to support the formation of an upper structure (such as a semiconductor element and a light-emitting structure). For example, after the upper structure is formed on the substrate 110, the glass substrate 105 may be removed. In other words, due to the flexible physical properties of the first organic film layer 111, the first barrier layer 112, the second organic film layer 113, and the second barrier layer 114, it may be difficult to directly form an upper structure on the first organic film layer 111, the first barrier layer 112, the second organic film layer 113, and the second barrier layer 114. Based on the above difficulties, by forming an upper structure using the glass substrate 105 and then removing the glass substrate 105, the first organic film layer 111, the first barrier layer 112, the second organic film layer 113, and the second barrier layer 114 may be used as the substrate 110.

[0114] A buffer layer (not shown) may be formed on the substrate 110. The buffer layer may be completely formed on the substrate 110. The buffer layer may prevent metal atoms or impurities from diffusing from the substrate 110, and may enable the formation of a substantially uniform active layer 130 by adjusting the heat transfer rate during a crystallization process for forming the active layer 130. Additionally, when the surface of the substrate 110 is uneven, the buffer layer may be used to improve the flatness of the surface of the substrate 110. Depending on the type of the substrate 110, at least two buffer layers may be provided on the substrate 110, or the buffer layer may not be formed. For example, the buffer layer may be formed by using an organic material or an inorganic material.

[0115] The active layer 130 may be formed in the display region 10 on the substrate 110. The active layer 130 may be formed by using an oxide semiconductor, an inorganic semiconductor, an organic semiconductor, or the like. The active layer 130 may have a source region and a drain region.

[0116] The gate insulating layer 150 may be formed on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display area 10 on the substrate 110 and may extend in a first direction D1, which is a direction from the display area 10 to the opening area 20. In other words, the gate insulating layer 150 may be entirely formed on the substrate 110. For example, the gate insulating layer 150 may sufficiently cover the active layer 130 on the substrate 110 and may have a substantially flat upper surface without creating a step around the active layer 130. Alternatively, the gate insulating layer 150 may cover the active layer 130 on the substrate 110 and may be formed to have a uniform thickness along the contour of the active layer 130 such that a step is formed around the active layer 130. The gate insulating layer 150 may be formed by using a silicon compound or a metal oxide, etc. In some exemplary embodiments, the gate insulating layer 150 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses or include different insulating materials.

[0117] The gate electrode 170 may be formed in the display area 10 on the gate insulating layer 150. The gate electrode 170 may be formed on a part of the gate insulating layer 150 under which the active layer 130 is located. The gate electrode 170 may be formed by using a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. Alternatively, the gate electrode 170 may include a multi-layer structure including a plurality of layers.

[0118] The interlayer insulating layer 190 may be formed on the gate electrode 170. The interlayer insulating layer 190 may cover the gate electrode 170 in the display area 10 on the gate insulating layer 150 and may extend in the first direction D1 on the gate insulating layer 150. In other words, the interlayer insulating layer 190 may be entirely formed on the gate insulating layer 150. For example, the interlayer insulating layer 190 may sufficiently cover the gate electrode 170 on the gate insulating layer 150 and may have a substantially flat upper surface without creating a step around the gate electrode 170. Alternatively, the interlayer insulating layer 190 may cover the gate electrode 170 on the gate insulating layer 150 and may be formed to have a uniform thickness along the contour of the gate electrode 170 such that a step is formed around the gate electrode 170. The interlayer insulating layer 190 may be formed by using a silicon compound or a metal oxide, etc. Alternatively, the interlayer insulating layer 190 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses or include different insulating materials.

[0119] Reference Figure 9, in the display region 10, a first contact hole 212 exposing the source region of the active layer 130 can be formed by removing a first portion of the gate insulating layer 150 and the insulating interlayer 190, and a second contact hole 232 exposing the drain region of the active layer 130 can be formed by removing a second portion of the gate insulating layer 150 and the insulating interlayer 190. Additionally, in the peripheral region 30, a third contact hole 222 exposing a third portion of the initial sacrificial metal pattern 401 can be formed by removing a first portion of the insulating interlayer 190, the gate insulating layer 150, the second barrier layer 114, and the second organic film layer 113, and a fourth contact hole 242 exposing a fourth portion of the initial sacrificial metal pattern 401 can be formed by removing a second portion of the insulating interlayer 190, the gate insulating layer 150, the second barrier layer 114, and the second organic film layer 113. In an exemplary embodiment, the first contact hole 212, the second contact hole 232, the third contact hole 222, and the fourth contact hole 242 can be formed simultaneously. For example, after a patterned photoresist (such as a photoresist having different heights) is formed on the insulating interlayer 190, an etching process is performed such that the first contact hole 212, the second contact hole 232, the third contact hole 222, and the fourth contact hole 242 can be formed in the same process. In some embodiments, after removing the insulating interlayer 190 and the gate insulating layer 150 from the third portion and the fourth portion of the initial sacrificial metal pattern 401 in the process of forming the first contact hole 212 and the second contact hole 232, an additional etching process is performed such that the second barrier layer 114 and the second organic film layer 113 can be removed from the third portion and the fourth portion of the initial sacrificial metal pattern 401, and the third contact hole 222 and the fourth contact hole 242 can be formed simultaneously.

[0120] Since the first contact hole 212, the second contact hole 232, the third contact hole 222, and the fourth contact hole 242 are formed, the first insulating layer pattern 410, the second insulating layer pattern 420, the third insulating layer pattern 430, and the fourth insulating layer pattern 440 can be defined on the initial sacrificial metal pattern 401. Herein, when the initial sacrificial metal pattern 401, the first insulating layer pattern 410, the second insulating layer pattern 420, the third insulating layer pattern 430, and the fourth insulating layer pattern 440 are not included, the space formed by the third contact hole 222 and the fourth contact hole 242 in the second organic film layer 113 is defined as a first opening 701, the space formed by the third contact hole 222 and the fourth contact hole 242 in the second barrier layer 114 is defined as a second opening 702, the space formed by the third contact hole 222 and the fourth contact hole 242 in the gate insulating layer 150 is defined as a third opening 703, and the space formed by the third contact hole 222 and the fourth contact hole 242 in the insulating interlayer 190 is defined as a fourth opening 704.

[0121] ReferenceFigure 10 , the source electrode 210 may be formed to be connected to the source region of the active layer 130 through the first contact hole 212, and the drain electrode 230 may be formed to be connected to the drain region of the active layer 130 through the second contact hole 232. Each of the source electrode 210 and the drain electrode 230 may be formed by using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These may be used alone or in combination with each other. In other exemplary embodiments, each of the source electrode 210 and the drain electrode 230 may have a multilayer structure including multiple layers.

[0122] Accordingly, the semiconductor element 250 may be formed to include the active layer 130, the gate insulating layer 150, the gate electrode 170, the insulating interlayer 190, the source electrode 210, and the drain electrode 230.

[0123] Reference Figure 11 , the planarization layer 270 may be formed on the insulating interlayer 190, the source electrode 210, and the drain electrode 230. The planarization layer 270 may cover the source electrode 210 and the drain electrode 230 in the display region 10 on the insulating interlayer 190, and may not be formed in the peripheral region 30. In other words, the planarization layer 270 may be formed only in the display region 10 on the insulating interlayer 190. For example, the planarization layer 270 may have a relatively high thickness in the display region 10. In such an embodiment, the planarization layer 270 may have a substantially planar upper surface, and a planarization process may be performed with respect to the planarization layer 270 to achieve the above-described planar upper surface of the planarization layer 270. Alternatively, the planarization layer 270 may be formed to have a uniform thickness along the contours of the source electrode 210 and the drain electrode 230 in the display region 10 on the insulating interlayer 190. The planarization layer 270 may be formed by using an organic material such as a photoresist, a polyacrylic resin, a polyimide resin, a polyamide resin, a silicone resin, an acrylic resin, and an epoxy resin.

[0124] The lower electrode 290 may be formed in the display region 10 on the planarization layer 270. The lower electrode 290 may be connected to the drain electrode 230 via a contact hole formed by removing a part of the planarization layer 270, and the lower electrode 290 may be electrically connected to the semiconductor element 250. The lower electrode 290 may be formed by using a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These may be used alone or in combination with each other. In an exemplary embodiment, the lower electrode 290 may have a multilayer structure including multiple layers. For example, the lower electrode 290 may have a multilayer structure in which indium tin oxide, silver, and indium tin oxide are sequentially stacked.

[0125] For example, in the process of forming the lower electrode 290, the initial electrode layer may be completely formed on the substrate 110, and then the initial electrode layer may be etched so that the lower electrode 290 can be formed. The above etching process may be performed using a wet etching process, and the etchant used in the wet etching process may be a mixed solution including phosphoric acid, acetic acid, nitric acid, etc. In an exemplary embodiment, the etchant may consist of phosphoric acetic nitric acid. The etchant may etch the initial electrode layer and at the same time etch a part of the initial sacrificial metal pattern 401 (such as two side portions of the initial sacrificial metal pattern 401). In other words, the etchant may etch the initial electrode layer and the initial sacrificial metal pattern 401 at the same time so that the lower electrode 290 and the sacrificial metal pattern 405 can be formed simultaneously. Herein, the first opening 701 and the second opening 702 together define a groove 930 in the substrate 110.

[0126] As the wet etching process is performed, a sacrificial metal pattern 405 having a first width W1 smaller than the width of the initial sacrificial metal pattern 401 may be formed, and the sacrificial metal pattern 405 is formed under a first insulating layer pattern 410 having a second width W2 greater than the first width W1, so that an undercut shape can be produced (for example, a sacrificial metal pattern 405 having a first width W1 smaller than the second width W2 of the first insulating layer pattern 410 is formed under the first insulating layer pattern 410).

[0127] Therefore, an undercut structure 400 including the sacrificial metal pattern 405, the first insulating layer pattern 410, the second insulating layer pattern 420, the third insulating layer pattern 430, and the fourth insulating layer pattern 440 can be formed.

[0128] The groove 930 (such as the first opening 701 and the second opening 702), the third opening 703, the fourth opening 704, and the undercut structure 400 can be used as a shielding pattern to shield moisture and / or humidity from penetrating or infiltrating from the opening region 20 into the display region 10.

[0129] Reference Figure 12 , the pixel defining layer 310 may be formed in the display region 10 on the planarization layer 270 and may not be formed in the surrounding region 30. In other words, the pixel defining layer 310 may be formed only in the display region 10 on the planarization layer 270. For example, the pixel defining layer 310 may expose a part of the upper surface of the lower electrode 290 while covering two side portions of the lower electrode 290. The pixel defining layer 310 may be formed by using an organic material.

[0130] The light-emitting layer 330 may be formed on the pixel-defining layer 310 and the lower electrode 290 in the display area 10, may extend in the first direction D1, and may be formed in the peripheral area 30 on the substrate 110. In an exemplary embodiment, the light-emitting layer 330 may be partially formed inside the groove 930 and may be spaced apart from another part of the light-emitting layer 330 in the depth direction (e.g., from the second barrier layer 114 to the first organic film layer 111) at a part where the groove 930 is located, by the undercut structure 400. In other words, the light-emitting layer 330 may be interrupted by the undercut structure 400 in the peripheral area 30. That is to say, the light-emitting layer 330 may be separated or divided by the groove 930, the third opening 703, the fourth opening 704, and the undercut structure 400 in the peripheral area 30.

[0131] The light-emitting layer 330 may have a multi-layer structure including an EML, a HIL, a HTL, an ETL, and an EIL. In an exemplary embodiment, the EML, HIL, HTL, ETL, and EIL may be formed in the peripheral area 30. In other exemplary embodiments, the HIL, HTL, ETL, and EIL except for the EML may be formed in the peripheral area 30.

[0132] The EML of the light-emitting layer 330 may be formed of at least one of light-emitting materials capable of emitting light of different colors (such as red, green, and blue) according to sub-pixels. On the other hand, the EML of the light-emitting layer 330 may be formed by laminating a plurality of light-emitting materials capable of generating different colors of light such as red, green, and blue, so that white light can be emitted as a whole. In such an embodiment, a color filter may also be formed on the light-emitting layer 330 disposed on the lower electrode 290. The color filter may include at least one of a red color filter, a green color filter, and a blue color filter. Alternatively, the color filter may also include at least one of a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may be formed by using a photosensitive resin or a color photoresist.

[0133] Reference Figure 13, the upper electrode 340 may overlap with the light-emitting layer 330 in the display area 10, may extend in the first direction D1, and may be formed in the surrounding area 30 on the light-emitting layer 330. In an exemplary embodiment, the upper electrode 340 may be partially formed inside the groove 930 and may be spaced apart in the depth direction from another part of the upper electrode 340 at the part where the groove 930 is located. In other words, the upper electrode 340 may be interrupted by the undercut structure 400 in the surrounding area 30. That is to say, the upper electrode 340 may be separated or divided by the groove 930, the third opening 703, the fourth opening 704, and the undercut structure 400 in the surrounding area 30. The upper electrode 340 may be formed by using a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. In other exemplary embodiments, the upper electrode 340 may have a multilayer structure including multiple layers.

[0134] Therefore, the light-emitting structure 200 may be formed to include the lower electrode 290, the light-emitting layer 330, and the upper electrode 340.

[0135] A capping layer (not shown) may be formed on the upper electrode 340. The capping layer may overlap with the upper electrode 340 in the display area 10, may extend in the first direction D1, and may be formed in the surrounding area 30 on the upper electrode 340. In an exemplary embodiment, the capping layer may be partially formed inside the groove 930 and may be spaced apart in the depth direction from another part of the capping layer at the part where the groove 930 is located. In other words, the capping layer may be interrupted by the undercut structure 400 in the surrounding area 30. That is to say, the capping layer may be separated or divided by the groove 930, the third opening 703, the fourth opening 704, and the undercut structure 400 in the surrounding area 30. The capping layer may protect the light-emitting structure 200 and may be formed by using an organic material such as a triamine derivative, an arylenediamine derivative, 4,4'-N,N'-dicarbazole-biphenyl, and tris-8-hydroxyquinoline aluminum.

[0136] Reference Figure 14, the first thin film encapsulation layer 451 may be formed in the display area 10 and the surrounding area 30 on the upper electrode 340. The first thin film encapsulation layer 451 may cover the upper electrode 340 in the display area 10, may be formed to have a uniform thickness along the contour of the upper electrode 340, and may extend to the surrounding area 30. The first thin film encapsulation layer 451 may be formed along the contour of the upper electrode 340 in the surrounding area 30. In other words, the first thin film encapsulation layer 451 may be continuously formed along the portion where the groove 930 is formed in the surrounding area 30. In an exemplary embodiment, the first thin film encapsulation layer 451 may completely cover the groove 930 and the undercut structure 400. In other words, the first thin film encapsulation layer 451 may be in direct contact with the two side portions of the sacrificial metal pattern 405. The first thin film encapsulation layer 451 may prevent the light-emitting structure 200 from deteriorating due to the penetration of moisture or oxygen, etc. In addition, the first thin film encapsulation layer 451 may also be used to protect the light-emitting structure 200 from the influence of external impacts. The first thin film encapsulation layer 451 may be formed by using a flexible inorganic material.

[0137] The second thin film encapsulation layer 452 may be formed in the display area 10 on the first thin film encapsulation layer 451, and the second thin film encapsulation layer 452 may not be formed in the surrounding area 30. In other words, the second thin film encapsulation layer 452 may be formed only in the display area 10. Alternatively, the second thin film encapsulation layer 452 may be formed in a part of the surrounding area 30. The second thin film encapsulation layer 452 may improve the flatness of the OLED device 100 and protect the light-emitting structure 200. The second thin film encapsulation layer 452 may be formed by using a flexible organic material.

[0138] Reference Figure 15 , the third thin film encapsulation layer 453 may be formed in the display area 10 on the second thin film encapsulation layer 452 and in the surrounding area 30 on the first thin film encapsulation layer 451. The third thin film encapsulation layer 453 may cover the second thin film encapsulation layer 452 in the display area 10, may be formed to have a uniform thickness along the contour of the second thin film encapsulation layer 452, and may extend to the surrounding area 30. In the surrounding area 30, the third thin film encapsulation layer 453 may be formed to have a uniform thickness along the contour of the first thin film encapsulation layer 451. In other words, the third thin film encapsulation layer 453 may be continuously formed along the portion where the groove 930 is formed in the surrounding area 30. The third thin film encapsulation layer 453 may, together with the first thin film encapsulation layer 451, prevent the light-emitting structure 200 from deteriorating due to the penetration of moisture or oxygen, etc. In addition, together with the first thin film encapsulation layer 451 and the second thin film encapsulation layer 452, the third thin film encapsulation layer 453 may also be used to protect the light-emitting structure 200 from the influence of external impacts. The third thin film encapsulation layer 453 may be formed by using a flexible inorganic material.

[0139] Accordingly, the thin film encapsulation structure 450 can be formed to include a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453. Alternatively, the thin film encapsulation structure 450 can be formed as a five-layer structure laminated with the first to fifth thin film encapsulation layers or a seven-layer structure laminated with the first to seventh thin film encapsulation layers.

[0140] After forming the thin film encapsulation structure 450, a laser can be used to irradiate the opening region 20 on the third thin film encapsulation layer 453. Alternatively, another etching process can be performed to expose the opening region 20 on the third thin film encapsulation layer 453.

[0141] Reference Figure 16 、 Figure 17 and Figure 6 , the opening 910 can be formed in the opening region 20 by laser irradiation, and the functional module 700 can be formed in the opening 910. In an exemplary embodiment, the functional module 700 can be in contact with the side surface of the substrate 110, the side surface of the light-emitting layer 330, the side surface of the upper electrode 340, the side surface of the first thin film encapsulation layer 451, and the side surface of the third thin film encapsulation layer 453 at the boundary between the surrounding region 30 and the opening region 20. For example, the functional module 700 can include a camera module, a face recognition sensor module, a pupil recognition sensor module, an acceleration sensor module and a geomagnetic sensor module, a proximity sensor module and an infrared sensor module, an illuminance sensor module, a vibration module, and / or a speaker module. After the functional module 700 is placed in the opening 910, the glass substrate 105 can be separated from the substrate 110. In this way, the OLED device 100 shown in Figure 6 can be manufactured.

[0142] Figure 18 and Figure 19 are cross-sectional views depicting a method of manufacturing an OLED device according to an exemplary embodiment of the present disclosure.

[0143] Reference Figure 7 、 Figure 8 and Figure 18 , after the insulating interlayer 190 is completely formed on the gate insulating layer 150, the first contact hole 1212, the second contact hole 1232, the third contact hole 1222, and the fourth contact hole 1242 can be formed in the display region 10 and the surrounding region 30. For example, Figure 18 the first contact hole 1212 and the second contact hole 1232 formed in the display region 10 shown in Figure 9 can be substantially the same as the first contact hole 212 and the second contact hole 232 shown in Figure 9 . While compared with the third contact hole 222 and the fourth contact hole 242 shown in Figure 18The widths of the third contact hole 1222 and the fourth contact hole 1242 in Figure 9 can be relatively small respectively on both side portions of the initial sacrificial metal pattern 401 in Figure 18 while both side portions of the initial sacrificial metal pattern 402 in

[0144] can be covered by the second organic film layer 113. Figure 19 Referring to Figure 19 in the process of forming the lower electrode 290, the initial electrode layer can be completely formed on the substrate 110, and then the lower electrode 290 can be formed by etching the initial electrode layer. The above etching process can be carried out using a wet etching process, and the etchant used in the wet etching process can be a mixed solution including phosphoric acid, acetic acid or nitric acid, etc. In an exemplary embodiment, the etchant can be composed of phosphonitric acetic acid. The etchant can etch the initial electrode layer and at the same time etch a part of the initial sacrificial metal pattern 402 (such as both side portions of the initial sacrificial metal pattern 402). In other words, the etchant can etch the initial electrode layer and the initial sacrificial metal pattern 402 at the same time so that the lower electrode 290 and the sacrificial metal pattern 405 can be formed at the same time. Herein, the first opening 701 and the second opening 702 together define a groove 930 in the substrate 110. When a part of the initial sacrificial metal pattern 402 overlaps with a part of the second organic film layer 113, the second organic film layer 113 can have a shape with its lower part extending laterally outwards. In other words, the groove 930 can have an undercut shape with its lower part extending laterally outwards.

[0145] Figure 20 is a cross-sectional view of an OLED device according to an exemplary embodiment of the present invention. Except for the undercut structure 1400, Figure 20 the OLED device 500 shown in Figures 1 to 6 can have a configuration substantially the same as or similar to that of the OLED device 100 described in reference Figure 20 Regarding Figures 1 to 6 the repeated description of components substantially the same as or similar to the components described in reference

[0146] Referring to Figure 20, the OLED device 500 may include a substrate 110, an undercut structure 1400, a first wiring 510, a second wiring 520, a third wiring 530, a semiconductor element 250, a first sub-undercut structure 515, a second sub-undercut structure 525, a planarization layer 270, a light-emitting structure 200, a pixel definition layer 310, a thin-film encapsulation structure 450, a functional module 700, etc. In this article, the substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Additionally, the undercut structure 1400 may include a first sacrificial metal pattern 405, a first insulating layer pattern 410, a second insulating layer pattern 420, a third insulating layer pattern 430, a second sacrificial metal pattern 415, a fourth insulating layer pattern 440, and a fifth insulating layer pattern 460. The first sub-undercut structure 515 may include a first sub-sacrificial metal pattern 461 and a first sub-insulating layer pattern 411, and the second sub-undercut structure 525 may include a second sub-sacrificial metal pattern 462 and a second sub-insulating layer pattern 412. The semiconductor element 250 may include an active layer 130, a gate insulating layer 150, a first gate electrode 170, a second gate electrode 175, a first insulating interlayer 190, a second insulating interlayer 195, a source electrode 210, and a drain electrode 230. Furthermore, the light-emitting structure 200 may include a lower electrode 290, a light-emitting layer 330, and an upper electrode 340, and the thin-film encapsulation structure 450 may include a first thin-film encapsulation layer 451, a second thin-film encapsulation layer 452, and a third thin-film encapsulation layer 453.

[0147] In an exemplary embodiment, the substrate 110 may further include a groove 930 formed in the peripheral region 30, and the undercut structure 1400 may be disposed inside the groove 930 and spaced apart from the inner wall of the groove 930. Additionally, the light-emitting layer 330 and the upper electrode 340 may be spaced apart by the undercut structure 1400 inside the groove 930. In other words, each of the light-emitting layer 330 and the upper electrode 340 may be interrupted by the undercut structure 1400 inside the groove 930. Additionally, the first sub-undercut structure 515 and the second sub-undercut structure 525 are disposed outside the groove 930 (e.g., on the upper surface of the first insulating interlayer 190) such that each of the light-emitting layer 330 and the upper electrode 340 may be interrupted. Therefore, the OLED device 500 includes the light-emitting layer 330 and the upper electrode 340 interrupted by the undercut structure 1400 inside and outside the groove 930, as well as the first sub-undercut structure 515 and the second sub-undercut structure 525, so as to prevent moisture and humidity, etc. from penetrating into the semiconductor element 250 and the light-emitting structure 200. Furthermore, the substrate 110 may further include an opening 910 formed in the opening region 20, and the functional module 700 may be disposed in the opening 910.

[0148] The first gate electrode 170 may be disposed in the display area 10 on the gate insulating layer 150. The first gate electrode 170 may be disposed on a part of the gate insulating layer 150, below which the active layer 130 is located. The first gate electrode 170 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. For example, the first gate electrode 170 may be composed of molybdenum. Alternatively, the first gate electrode 170 may include a multi-layer structure including a plurality of layers.

[0149] The first interlayer insulating layer 190 may be disposed on the first gate electrode 170. The first interlayer insulating layer 190 may cover the first gate electrode 170 in the display area 10 on the substrate 110, may extend in the first direction D1, and may be disposed in the peripheral area 30 on the substrate 110. In an exemplary embodiment, the first interlayer insulating layer 190 may have a fourth opening 704 overlapping the third opening 703 in the peripheral area 30. In other words, the first interlayer insulating layer 190 may expose the upper surface of the first barrier layer 112 located in the peripheral area 30 through the fourth opening 704. For example, the first interlayer insulating layer 190 may sufficiently cover the first gate electrode 170 in the display area 10 on the gate insulating layer 150 and may have a substantially flat upper surface without creating a step around the first gate electrode 170. Alternatively, the first interlayer insulating layer 190 may cover the first gate electrode 170 in the display area 10 on the gate insulating layer 150 and may be arranged to have a uniform thickness along the contour of the first gate electrode 170. The first interlayer insulating layer 190 may include a silicon compound or a metal oxide, etc. Alternatively, the first interlayer insulating layer 190 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses or include different materials.

[0150] The second gate electrode 175 may be disposed in the display area 10 on the first interlayer insulating layer 190. The second gate electrode 175 may be disposed on a part of the first interlayer insulating layer 190, below which the first gate electrode 170 is located. The second gate electrode 175 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. For example, the second gate electrode 175 may be composed of molybdenum. Alternatively, the second gate electrode 175 may include a multi-layer structure including a plurality of layers.

[0151] The second insulating interlayer 195 may be disposed on the second gate electrode 175. The second insulating interlayer 195 may cover the second gate electrode 175 in the display area 10 on the substrate 110, may extend in the first direction D1, and may be disposed in the peripheral area 30 on the substrate 110. In an exemplary embodiment, the second insulating interlayer 195 may have a fifth opening overlapping with the fourth opening 704 in the peripheral area 30. In an exemplary embodiment, the width of the fifth opening may be greater than the width of the fourth opening 704, and a part of the upper surface of the first insulating interlayer 190 and a part of the upper surface of the first barrier layer 112 located in the peripheral area 30 may be exposed through the fifth opening. For example, the second insulating interlayer 195 may sufficiently cover the second gate electrode 175 in the display area 10 on the first insulating interlayer 190 and have a substantially flat upper surface without generating a step around the second gate electrode 175. Alternatively, the second insulating interlayer 195 may cover the second gate electrode 175 in the display area 10 on the first insulating interlayer 190 and may be arranged to have a uniform thickness along the contour of the second gate electrode 175. The second insulating interlayer 195 may include a silicon compound or a metal oxide, etc. Alternatively, the second insulating interlayer 195 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses or include different materials.

[0152] The source electrode 210 and the drain electrode 230 may be disposed in the display area 10 on the second insulating interlayer 195. The source electrode 210 may be connected to the source region of the active layer 130 via a contact hole formed by removing a first portion of the gate insulating layer 150, the first insulating interlayer 190, and the second insulating interlayer 195, and the drain electrode 230 may be connected to the drain region of the active layer 130 via a contact hole formed by removing a second portion of the gate insulating layer 150, the first insulating interlayer 190, and the second insulating interlayer 195. The source electrode 210 and the drain electrode 230 may each include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. In other exemplary embodiments, the source electrode 210 and the drain electrode 230 may each have a multi-layer structure including a plurality of layers.

[0153] Therefore, the semiconductor element 250 including the active layer 130, the gate insulating layer 150, the first gate electrode 170, the first insulating interlayer 190, the second gate electrode 175, the second insulating interlayer 195, the source electrode 210, and the drain electrode 230 may be disposed between the substrate 110 and the light-emitting structure 200.

[0154] The first sacrificial metal pattern 405 may be disposed inside the groove 930 of the substrate 110. In other words, the first sacrificial metal pattern 405 may be disposed on the upper surface of the first barrier layer 112. In an exemplary embodiment, the first sacrificial metal pattern 405 may have a first width W1 and may be spaced apart from the inner wall of the groove 930. Additionally, the first sacrificial metal pattern 405 may be spaced apart from the light-emitting layer 330 and the upper electrode 340 disposed in the groove 930 (or the surrounding area 30). In other words, the first sacrificial metal pattern 405 may not be in direct contact with the light-emitting layer 330 and the upper electrode 340. The first sacrificial metal pattern 405 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. In an exemplary embodiment, the first sacrificial metal pattern 405 may include a material that is etched by an etchant used to pattern the lower electrode 290. For example, the first sacrificial metal pattern 405 may be composed of molybdenum. In other exemplary embodiments, the first sacrificial metal pattern 405 may have a multi-layer structure including multiple layers.

[0155] The first insulating layer pattern 410 may be disposed on the first sacrificial metal pattern 405. The first insulating layer pattern 410 may be disposed inside the groove 930. In an exemplary embodiment, the first insulating layer pattern 410 may have a second width W2 greater than the first width W1 and may be spaced apart from the inner wall of the groove 930. Additionally, the first insulating layer pattern 410 may be on the same layer as the second organic film layer 113. The first insulating layer pattern 410 may include a flexible organic material. For example, the first insulating layer pattern 410 may include a random copolymer or a block copolymer. In an exemplary embodiment, the first insulating layer pattern 410 may include polyimide.

[0156] The second insulating layer pattern 420 may be disposed on the first insulating layer pattern 410. The second insulating layer pattern 420 may be disposed inside the groove 930. In an exemplary embodiment, the width of the second insulating layer pattern 420 may be greater than the first width W1 and may be spaced apart from the inner wall of the groove 930. Additionally, the second insulating layer pattern 420 may be on the same layer as the second barrier layer 114. Alternatively, the width of the second insulating layer pattern 420 may be equal to or less than the first width W1. The second insulating layer pattern 420 may include a flexible inorganic material. In an exemplary embodiment, the second insulating layer pattern 420 may include silicon oxide or silicon nitride, etc.

[0157] The third insulating layer pattern 430 may be disposed on the second insulating layer pattern 420. The third insulating layer pattern 430 may be disposed inside the third opening 703. In an exemplary embodiment, the width of the third insulating layer pattern 430 may be greater than the first width W1 and may be spaced apart from the inner wall of the third opening 703. Additionally, the third insulating layer pattern 430 may be on the same layer as the gate insulating layer 150. Alternatively, the width of the third insulating layer pattern 430 may be equal to or less than the first width W1. The third insulating layer pattern 430 may include a silicon compound or a metal oxide, etc.

[0158] The second sacrificial metal pattern 415 may be disposed inside the fourth opening 704 of the first insulating interlayer 190. In other words, the second sacrificial metal pattern 415 may be disposed on the upper surface of the third insulating layer pattern 430. In an exemplary embodiment, the width of the second sacrificial metal pattern 415 may be less than the first width W1 and may be spaced apart from the inner wall of the fourth opening 704. Additionally, the second sacrificial metal pattern 415 may be spaced apart from the light-emitting layer 330 and the upper electrode 340 disposed in the groove 930 (or the surrounding area 30). In other words, the second sacrificial metal pattern 415 may not be in direct contact with the light-emitting layer 330 and the upper electrode 340. The second sacrificial metal pattern 415 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc. These may be used alone or in combination with each other. In an exemplary embodiment, the second sacrificial metal pattern 415 may include a material that is etched by an etchant used to pattern the lower electrode 290 and may be formed simultaneously with the first gate electrode 170 using the same material in the same layer. For example, the second sacrificial metal pattern 415 may be composed of molybdenum. In other exemplary embodiments, the second sacrificial metal pattern 415 may have a multi-layer structure including multiple layers.

[0159] The fourth insulating layer pattern 440 may be disposed on the second sacrificial metal pattern 415. The fourth insulating layer pattern 440 may be disposed inside the fourth opening 704. In an exemplary embodiment, the width of the fourth insulating layer pattern 440 may be greater than the width of the second sacrificial metal pattern 415 and may be spaced apart from the inner wall of the fourth opening 704. Additionally, the fourth insulating layer pattern 440 may be on the same layer as the first insulating interlayer 190. The fourth insulating layer pattern 440 may include a silicon compound or a metal oxide, etc.

[0160] The fifth insulating layer pattern 460 may be disposed on the fourth insulating layer pattern 440. The fifth insulating layer pattern 460 may be disposed inside the fifth opening. In an exemplary embodiment, the width of the fifth insulating layer pattern 460 may be greater than the width of the second sacrificial metal pattern 415 and may be spaced apart from the inner wall of the fifth opening. Additionally, the fifth insulating layer pattern 460 may be on the same layer as the second insulating interlayer 195. The fifth insulating layer pattern 460 may include a silicon compound, a metal oxide, or the like.

[0161] Accordingly, the undercut structure 1400 including the first sacrificial metal pattern 405, the second sacrificial metal pattern 415, the first insulating layer pattern 410, the second insulating layer pattern 420, the third insulating layer pattern 430, the fourth insulating layer pattern 440, and the fifth insulating layer pattern 460 may be disposed.

[0162] The first sub-undercut structure 515 and the second sub-undercut structure 525 may be disposed on the upper surface of the first insulating interlayer 190 in the surrounding area 30, which is exposed by the fifth opening of the second insulating interlayer 195. In other words, the first sub-undercut structure 515 and the second sub-undercut structure 525 may be spaced apart from two side portions of the undercut structure 1400.

[0163] For example, the first sub-undercut structure 515 may be disposed on the left side of the undercut structure 1400. The first sub-sacrificial metal pattern 461 may be disposed on the upper surface of the first insulating interlayer 190 exposed by the fifth opening. In an exemplary embodiment, the width of the first sub-sacrificial metal pattern 461 may be less than the width of the first sub-insulating layer pattern 411. The first sub-sacrificial metal pattern 461 may not contact the light-emitting layer 330 and the upper electrode 340 disposed in the surrounding area 30, and two side portions of the first sub-sacrificial metal pattern 461 may be in direct contact with the first thin film encapsulation layer 451. The first sub-sacrificial metal pattern 461 may include a metal, an alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, or the like. These may be used alone or in combination with each other. In an exemplary embodiment, the first sub-sacrificial metal pattern 461 may include a material etched by an etchant used to pattern the lower electrode 290. For example, the first sub-sacrificial metal pattern 461 may be formed simultaneously with the second gate electrode 175 using the same material in the same layer and may be composed of molybdenum. In other exemplary embodiments, the first sub-sacrificial metal pattern 461 may have a multi-layer structure including multiple layers.

[0164] The first sub-insulating layer pattern 411 may be disposed on the first sub-sacrificial metal pattern 461. The first sub-insulating layer pattern 411 may be disposed inside the fifth opening. In an exemplary embodiment, the width of the first sub-insulating layer pattern 411 may be greater than the width of the first sub-sacrificial metal pattern 461 and may be spaced apart from the inner wall of the fifth opening.

[0165] In addition, the first sub-insulating layer pattern 411 may be on the same layer as the second insulating interlayer 195. The first sub-insulating layer pattern 411 may include a silicon compound, a metal oxide, or the like. In addition, the second sub-undercut structure 525 may be disposed on the right side of the undercut structure 1400. The second sub-sacrificial metal pattern 462 may be disposed on the upper surface of the first insulating interlayer 190 exposed by the fifth opening. In an exemplary embodiment, the width of the second sub-sacrificial metal pattern 462 may be less than the width of the second sub-insulating layer pattern 412. The second sub-sacrificial metal pattern 462 may not contact the light-emitting layer 330 and the upper electrode 340 disposed in the surrounding area 30, and both side portions of the second sub-sacrificial metal pattern 462 may be in direct contact with the first thin-film encapsulation layer 451. The second sub-sacrificial metal pattern 462 may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These may be used alone or in combination with each other. In an exemplary embodiment, the second sub-sacrificial metal pattern 462 may include a material etched by an etchant used to pattern the lower electrode 290. For example, the second sub-sacrificial metal pattern 462 may be formed simultaneously with the second gate electrode 175 using the same material in the same layer and may be composed of molybdenum. In other exemplary embodiments, the second sub-sacrificial metal pattern 462 may have a multi-layer structure including multiple layers.

[0166] The second sub-insulating layer pattern 412 may be disposed on the second sub-sacrificial metal pattern 462. The second sub-insulating layer pattern 412 may be disposed inside the fifth opening.

[0167] In an exemplary embodiment, the width of the second sub-insulating layer pattern 412 may be greater than the width of the second sub-sacrificial metal pattern 462 and may be spaced apart from the inner wall of the fifth opening. In addition, the second sub-insulating layer pattern 412 may be in the same layer as the second insulating interlayer 195. The second sub-insulating layer pattern 412 may include a silicon compound, a metal oxide, or the like. In an exemplary embodiment, the first sub-undercut structure 515 and the second sub-undercut structure 525 may be symmetric with respect to the undercut structure 1400.

[0168] The first wiring 510 may be disposed in the surrounding area 30 on the first barrier layer 112. The first wiring 510 may be spaced apart from the first sacrificial metal pattern 405 and may be formed simultaneously with the first sacrificial metal pattern 405 using the same material in the same layer.

[0169] The second wiring 520 may be disposed in the surrounding area 30 on the gate insulating layer 150. The second wiring 520 may be spaced apart from the second sacrificial metal pattern 415 and may be formed simultaneously with the first gate electrode 170 and the second sacrificial metal pattern 415 using the same material in the same layer.

[0170] The third wiring 530 may be disposed in the peripheral region 30 on the first insulating interlayer 190. The third wiring 530 may be spaced apart from the first sub-sacrificial metal pattern 461, and may be formed simultaneously with the second gate electrode 175 and the first sub-sacrificial metal pattern 461 by using the same material in the same layer.

[0171] The first to third wirings 510, 520, and 530 may include data signal wirings, gate signal wirings, light emission control signal wirings, gate initialization signal wirings, initialization voltage wirings, or power supply voltage wirings, etc., and transmit data signals, gate signals, light emission control signals, gate initialization signals, initialization voltages, and power supply voltages to the semiconductor element 250 and / or the light emitting structure 200.

[0172] In other exemplary embodiments, the first wiring 510, the second wiring 520, and the third wiring 530 may be disposed between the undercut structure 1400 and the functional module 700.

[0173] The OLED device 500 according to an exemplary embodiment of the present invention includes an undercut structure 1400, a first sub-undercut structure 515, and a second sub-undercut structure 525 located in the peripheral region 30, such that the OLED device 500 can easily prevent moisture and humidity, etc. from penetrating from the peripheral region 30 to the display region 10 and into the semiconductor element 250 and the light emitting structure 200.

[0174] In addition, the OLED device 500 includes the first to third wirings 510, 520, and 530 disposed in the peripheral region 30, such that the number of signal wirings and voltage wirings disposed in the periphery (such as the non-display region) of the display region 10 can be reduced. Therefore, the OLED device 500 can reduce the width of the outside (such as the dead space) of the display region 10.

[0175] Figure 21 It is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present disclosure. Except for the shapes of the undercut structure 1400 and the light-shielding pattern 610, Figure 21 the OLED device 600 shown in Figure 20 may have a configuration substantially the same as or similar to that of the OLED device 500 described with reference to Figure 21 . Regarding Figure 20 the repeated description of components substantially the same as or similar to the components described with reference to

[0176] Reference Figure 21, the OLED device 600 may include a substrate 110, an undercut structure 1400, a light-shielding pattern 610, a first wiring 510, a second wiring 520, a third wiring 530, a semiconductor element 250, a first sub-undercut structure 515, a second sub-undercut structure 525, a planarization layer 270, a light-emitting structure 200, a pixel definition layer 310, a thin-film encapsulation structure 450, a functional module 700, etc. In one or more embodiments, the substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Additionally, the undercut structure 1400 may include a first sacrificial metal pattern 405, a first insulating layer pattern 410, a second insulating layer pattern 420, a third insulating layer pattern 430, a second sacrificial metal pattern 415, a fourth insulating layer pattern 440, and a fifth insulating layer pattern 460. The first sub-undercut structure 515 may include a first sub-sacrificial metal pattern 461 and a first sub-insulating layer pattern 411, and the second sub-undercut structure 525 may include a second sub-sacrificial metal pattern 462 and a second sub-insulating layer pattern 412.

[0177] When compared with Figure 20 the undercut structure 1400 in Figure 21 , the widths of the second sacrificial metal pattern 415, the fourth insulating layer pattern 440, and the fifth insulating layer pattern 460 of the undercut structure 1400 in

[0178] may be relatively small. In such an embodiment, the step between the third insulating layer pattern 430 and the fourth insulating layer pattern 440 may be relatively large, and the light-emitting layer 330 and the upper electrode 340 disposed in the surrounding area 30 may be more likely to be open-circuited.

[0179] A predetermined voltage can be applied to the light-shielding pattern 610. When this voltage is applied to the light-shielding pattern 610, the light-shielding pattern 610 can relatively reduce the interference with the driving of the semiconductor element 250 due to the charges contained in the substrate 110. Alternatively, the light-shielding pattern 610 can be grounded outside the OLED device 600. In such an embodiment, the charges contained in the substrate 110 can be released to the outside through the light-shielding pattern 610. In other words, when the light-shielding pattern 610 is grounded, the light-shielding pattern 610 can relatively reduce the interference with the driving of the semiconductor element 250 due to the charges contained in the substrate 110. Additionally, the light-shielding pattern 610 can correspond to the back gate of the semiconductor element 250. Furthermore, the light-shielding pattern 610 can function as a light-shielding pattern for shielding external light incident from the outside. The light-shielding pattern 610 can include metals, alloys, metal nitrides, conductive metal oxides, or transparent conductive materials, etc. These can be used alone or in combination with each other. Alternatively, the light-shielding pattern 610 can include a multilayer structure including multiple layers.

[0180] In an exemplary embodiment, the light-shielding pattern 610, the first wiring 510, and the first sacrificial metal pattern 405 can be formed simultaneously using the same material in the same layer.

[0181] Figure 22 is a cross-sectional view of an OLED device according to an exemplary embodiment of the present disclosure. In addition to the first wiring 510 and the second wiring 520, Figure 22 the OLED device 800 shown in Figures 1 to 6 can have a configuration that is substantially the same as or similar to that of the OLED device 100 described with reference to Figure 22 Regarding Figures 1 to 6 , a repeated description of components that are substantially the same as or similar to the components described with reference to

[0182] Reference Figure 22 shows that the OLED device 800 can include a substrate 110, an undercut structure 400, a first wiring 510, a second wiring 520, a semiconductor element 250, a planarization layer 270, a light-emitting structure 200, a pixel definition layer 310, a thin-film encapsulation structure 450, and a functional module 700, etc. Herein, the substrate 110 can include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Additionally, the undercut structure 400 can include a sacrificial metal pattern 405, a first insulating layer pattern 410, a second insulating layer pattern 420, a third insulating layer pattern 430, and a fourth insulating layer pattern 440.

[0183] The first wiring 510 may be disposed in the peripheral region 30 on the first barrier layer 112. The first wiring 510 may be spaced apart from the sacrificial metal pattern 405 and may be formed simultaneously with the sacrificial metal pattern 405 using the same material in the same layer.

[0184] The second wiring 520 may be disposed in the peripheral region 30 on the gate insulating layer 150. The second wiring 520 may be formed simultaneously with the first gate electrode 170 using the same material in the same layer.

[0185] The first wiring 510 and the second wiring 520 may include a data signal wiring, a gate signal wiring, a light emission control signal wiring, a gate initialization signal wiring, an initialization voltage wiring, a power supply voltage wiring, etc., and the first wiring 510 and the second wiring 520 may transmit data signals, gate signals, light emission control signals, gate initialization signals, initialization voltages, and power supply voltages to the semiconductor element 250 and / or the light emitting structure 200.

[0186] The OLED device 800 according to an exemplary embodiment of the present disclosure includes the first wiring 510 and the second wiring 520 disposed in the peripheral region 30, such that the number of signal wirings and voltage wirings disposed in the periphery (such as the non-display region) of the display region 10 can be reduced. Accordingly, the OLED device 800 can reduce dead space.

[0187] Figure 23 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention. Figure 24 is for describing Figure 23 a plan view of a touch screen structure included in the OLED device in. Except for the touch screen structure 380 and the light shielding structure 880, Figure 23 the OLED device 900 shown in may have a configuration substantially the same as or similar to that of the OLED device 100 described with reference to Figures 1 to 6 Regarding, Figure 23 with reference to Figures 1 to 6 the repeated description of components substantially the same as or similar to the components described will be omitted.

[0188] Reference Figure 23 and Figure 24, the OLED device 900 may include a substrate 110, an undercut structure 400, a semiconductor element 250, a planarization layer 270, a light-emitting structure 200, a pixel definition layer 310, a thin-film encapsulation structure 450, a touchscreen structure 380, a light-shielding structure 880, and a functional module 700, etc. In one or more embodiments, the substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Additionally, the undercut structure 400 may include a sacrificial metal pattern 405, a first insulating layer pattern 410, a second insulating layer pattern 420, a third insulating layer pattern 430, and a fourth insulating layer pattern 440, and the touchscreen structure 380 may include a plurality of first touchscreen electrodes 382, a plurality of second touchscreen electrodes 384, a plurality of touchscreen connection electrodes 386, a first insulating layer 395, and a second insulating layer 398. Furthermore, the light-shielding structure 880 may include a first light-shielding pattern 810, a second light-shielding pattern 820, a third light-shielding pattern 830, a fourth light-shielding pattern 840, and a fifth light-shielding pattern 850, and the thin-film encapsulation structure 450 may include a first thin-film encapsulation layer 451, a second thin-film encapsulation layer 452, and a third thin-film encapsulation layer 453.

[0189] The first touchscreen electrodes 382 and the second touchscreen electrodes 384 may be disposed in the display area 10 on the third thin-film encapsulation layer 453. As Figure 24 shown, each of the first touchscreen electrodes 382 may extend in the second direction D2 and may be spaced apart from each other in the first direction D1. The second touchscreen electrodes 384 may be spaced apart from each other in the second direction D2 between two adjacent first touchscreen electrodes 382 among the first touchscreen electrodes 382. For example, each of the first touchscreen electrodes 382 and the second touchscreen electrodes 384 may include carbon nanotubes (CNT), transparent conductive oxides, indium tin oxide (ITO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO x ), graphene, silver nanowires (AgNW), copper (Cu), and chromium (Cr), etc.

[0190] The first insulating layer 395 may be disposed in the display area 10 on the third thin film encapsulation layer 453, the first touch screen electrode 382, and the second touch screen electrode 384. The first insulating layer 395 may cover the first touch screen electrode 382 and the second touch screen electrode 384 in the display area 10, may be arranged to have a uniform thickness or a substantially uniform thickness along the contours of the first touch screen electrode 382 and the second touch screen electrode 384, and may extend to the peripheral area 30. The first insulating layer 395 may be arranged along the contour of the third thin film encapsulation layer 453 in the peripheral area 30. The first insulating layer 395 may include an organic material or an inorganic material. Alternatively, the first insulating layer 395 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses or include different materials.

[0191] The touch screen connection electrode 386 may be disposed in the display area 10 on the first insulating layer 395. As Figure 24 shown, the touch screen connection electrode 386 may electrically connect two second touch screen electrodes 384 adjacent to each other in the first direction D1 among the second touch screen electrodes 384 through a contact hole. For example, the touch screen connection electrode 386 may include the same material as the first touch screen electrode 382 and the second touch screen electrode 384. Alternatively, the touch screen connection electrode 386 may include a metal, an alloy, a metal nitride, a conductive metal oxide, and a transparent conductive material, etc. These may be used alone or in combination with each other.

[0192] The second insulating layer 398 may be disposed in the display area 10 and the peripheral area 30 on the first insulating layer 395 and the touch screen connection electrode 386. The second insulating layer 398 may cover the touch screen connection electrode 386 to have a uniform thickness or a substantially uniform thickness in the display area 10 and the peripheral area 30 on the first insulating layer 395, and may be arranged along the contour of the touch screen connection electrode 386. Alternatively, the second insulating layer 398 may be arranged to have a relatively large thickness on the first insulating layer 395. In such an embodiment, the second insulating layer 398 may have a substantially flat upper surface. The second insulating layer 398 may be formed of an organic material or an inorganic material.

[0193] The first light-shielding pattern 810 may be disposed in the peripheral area 30 on the first barrier layer 112. The first light-shielding pattern 810 may be disposed between the undercut structure 400 and the functional module 700. The first light-shielding pattern 810 may be formed simultaneously with the sacrificial metal pattern 405 by using the same material in the same layer.

[0194] The second light-shielding pattern 820 may be disposed in the peripheral region 30 on the insulating interlayer 190. The second light-shielding pattern 820 may be disposed between the undercut structure 400 and the functional module 700. The second light-shielding pattern 820 may be connected to the upper surface of the first light-shielding pattern 810 via a contact hole formed by removing portions of the second organic film layer 113, the second barrier layer 114, the gate insulating layer 150, and the insulating interlayer 190. The second light-shielding pattern 820 may be formed simultaneously with the source electrode 210 and the drain electrode 230 using the same material in the same layer.

[0195] The third light-shielding pattern 830 may be disposed in the peripheral region 30 on the third thin film encapsulation layer 453. The third light-shielding pattern 830 may overlap with the second light-shielding pattern 820 and the first light-shielding pattern 810. The third light-shielding pattern 830 may be connected to the upper surface of the second light-shielding pattern 820 via a contact hole formed by removing portions of the light-emitting layer 330, the upper electrode 340, the first thin film encapsulation layer 451, and the third thin film encapsulation layer 453. The third light-shielding pattern 830 may be formed simultaneously with the first touch screen electrode 382 using the same material in the same layer.

[0196] The fourth light-shielding pattern 840 may be disposed in the peripheral region 30 on the first insulating layer 395. The fourth light-shielding pattern 840 may overlap with the third light-shielding pattern 830, the second light-shielding pattern 820, and the first light-shielding pattern 810. The fourth light-shielding pattern 840 may be connected to the upper surface of the third light-shielding pattern 830 via a contact hole formed by removing a portion of the first insulating layer 395. The fourth light-shielding pattern 840 may be formed simultaneously with the touch screen connection electrode 386 using the same material in the same layer.

[0197] The fifth light-shielding pattern 850 may be disposed in the peripheral region 30 on the second insulating layer 398. The fifth light-shielding pattern 850 may overlap with the fourth light-shielding pattern 840, the third light-shielding pattern 830, the second light-shielding pattern 820, and the first light-shielding pattern 810. The fifth light-shielding pattern 850 may be connected to the upper surface of the fourth light-shielding pattern 840 via a contact hole formed by removing a portion of the second insulating layer 398. The fifth light-shielding pattern 850 may include an organic material such as a photoresist, a polyacrylic resin, a polyimide resin, a polyamide resin, a silicone resin, an acrylic resin, and an epoxy resin. The fifth light-shielding pattern 850 may be substantially opaque. For example, in one or more embodiments, the fifth light-shielding pattern 850 may further include a light-shielding material for absorbing external light. The light-shielding material may include carbon black, titanium oxynitride, titanium black, phenyl black, aniline black, cyanine black, aniline black acid black, and black resin, etc.

[0198] For example, a part of the light emitted from the light-emitting structure 200 may be emitted from the display area 10 to the opening area 20 through the organic layer and the inorganic layer disposed on the substrate 110. In other words, light leakage may occur on the surface where the inorganic layer and the organic layer are in contact with the functional module 700.

[0199] The OLED device 900 according to an exemplary embodiment of the present disclosure includes a light-shielding structure 880 such that the light emitted through the inorganic layer and the organic layer can be shielded.

[0200] Figure 25 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present invention. Except for the shapes of the touchscreen structure 380, the light-emitting layer 330, and the upper electrode 340, Figure 25 the OLED device 1000 shown in Figures 1 to 6 may have a configuration substantially the same as or similar to that of the OLED device 100 Figure 25 described with reference to Figures 1 to 6 The repetitive description of components substantially the same as or similar to the components described with reference to

[0201] Reference Figure 25 , the OLED device 1000 may include a substrate 110, an undercut structure 400, a semiconductor element 250, a planarization layer 270, a light-emitting structure 200, a pixel defining layer 310, a thin film encapsulation structure 450, a touchscreen structure 380, and a functional module 700, etc. In one or more embodiments, the substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Additionally, the undercut structure 400 may include a sacrificial metal pattern 405, a first insulating layer pattern 410, a second insulating layer pattern 420, a third insulating layer pattern 430, and a fourth insulating layer pattern 440, and the touchscreen structure 380 may include a plurality of first touchscreen electrodes 382, a plurality of second touchscreen electrodes 384, a plurality of touchscreen connection electrodes 386, a first insulating layer 395, and a second insulating layer 398. Further, the thin film encapsulation structure 450 may include a first thin film encapsulation layer 451, a second thin film encapsulation layer 452, and a third thin film encapsulation layer 453.

[0202] The light-emitting layer 330 may be disposed on the pixel defining layer 310 and the lower electrode 290 in the display area 10, may extend in the first direction D1, and may be disposed in the peripheral area 30 on the substrate 110. In an exemplary embodiment, the side surface of the light-emitting layer 330 may not be in direct contact with the functional module 700 in the peripheral area 30. In other words, the light-emitting layer 330 may be spaced apart from the functional module 700 by a predetermined distance in the peripheral area 30.

[0203] The upper electrode 340 may overlap with the light-emitting layer 330 in the display area 10, may extend in the first direction D1, and may be disposed in the peripheral area 30 on the light-emitting layer 330. In an exemplary embodiment, the side surface of the upper electrode 340 may not be in direct contact with the functional module 700 in the peripheral area 30. In other words, the upper electrode 340 may be spaced apart from the functional module 700 by a predetermined distance in the peripheral area 30.

[0204] The first thin-film encapsulation layer 451 may be disposed in the display area 10 and the peripheral area 30 on the upper electrode 340. The first thin-film encapsulation layer 451 may cover the upper electrode 340 in the display area 10, may be disposed to have a uniform thickness or a substantially uniform thickness along the contour of the upper electrode 340, and may extend to the peripheral area 30. The first thin-film encapsulation layer 451 may be disposed along the contour of the upper electrode 340 in the peripheral area 30. In an exemplary embodiment, the side surface of the first thin-film encapsulation layer 451 may not be in direct contact with the functional module 700 in the peripheral area 30. In other words, the first thin-film encapsulation layer 451 may be spaced apart from the functional module 700 by a predetermined distance in the peripheral area 30.

[0205] The third thin-film encapsulation layer 453 may be disposed in the display area 10 on the second thin-film encapsulation layer 452 and the peripheral area 30 on the first thin-film encapsulation layer 451. The third thin-film encapsulation layer 453 may cover the second thin-film encapsulation layer 452 in the display area 10, may be disposed to have a uniform thickness or a substantially uniform thickness along the contour of the second thin-film encapsulation layer 452, and may extend to the peripheral area 30. The third thin-film encapsulation layer 453 may be disposed along the contour of the first thin-film encapsulation layer 451 in the peripheral area 30. In an exemplary embodiment, the side surface of the third thin-film encapsulation layer 453 may not be in direct contact with the functional module 700 in the peripheral area 30. In other words, the third thin-film encapsulation layer 453 may be spaced apart from the functional module 700 by a predetermined distance in the peripheral area 30.

[0206] The first insulating layer 395 may be disposed in the display area 10 on the third thin-film encapsulation layer 453, the first touch-screen electrode 382, and the second touch-screen electrode 384. The first insulating layer 395 may cover the first touch-screen electrode 382 and the second touch-screen electrode 384 in the display area 10, may be disposed to have a uniform thickness or a substantially uniform thickness along the contours of the first touch-screen electrode 382 and the second touch-screen electrode 384, and may extend to the peripheral area 30. The first insulating layer 395 may be disposed along the contour of the third thin-film encapsulation layer 453 in the peripheral area 30. In an exemplary embodiment, the side surface of the first insulating layer 395 may not be in direct contact with the functional module 700 in the peripheral area 30. In other words, the first insulating layer 395 may be spaced apart from the functional module 700 by a predetermined distance in the peripheral area 30.

[0207] The second insulating layer 398 may be disposed in the display area 10 and the peripheral area 30 on the first insulating layer 395 and the touch screen connection electrodes 386. The second insulating layer 398 may cover the touch screen connection electrodes 386 to have a uniform thickness or a substantially uniform thickness in the display area 10 and the peripheral area 30 on the first insulating layer 395, and may be disposed along the contour of the touch screen connection electrodes 386. In an exemplary embodiment, the second insulating layer 398 may cover the sidewalls of the light emitting layer 330, the sidewalls of the upper electrode 340, the sidewalls of the first thin film encapsulation layer 451, the sidewalls of the third thin film encapsulation layer 453, and the sidewalls of the first insulating layer 395 in the peripheral area 30, and the sidewalls of the second insulating layer 398 may be in direct contact with the functional module 700.

[0208] For example, the light emitting layer 330 and the upper electrode 340 located in the peripheral area 30 may be cut off by the undercut structure 400. Additionally, portions of the light emitting layer 330 and the upper electrode 340 located between the undercut structure 400 and the functional module 700 are removed in the process of forming the touch screen structure 380, such that the light emitting layer 330 and the upper electrode 340 may be separated (or cut off) from the functional module 700, respectively. Additionally, the side surfaces of the light emitting layer 330 and the side surfaces of the upper electrode 340 are covered by the second insulating layer 398, such that penetration or infiltration of moisture and / or humidity into the side surfaces of the light emitting layer 330 and the side surfaces of the upper electrode 340 may be prevented or at least alleviated. In such an embodiment, the second insulating layer 398 may include an inorganic material.

[0209] In the OLED device 1000 according to an exemplary embodiment of the present invention, the light emitting layer 330 and the upper electrode 340 located in the peripheral area 30 are separated from the functional module 700, and the side surfaces of the light emitting layer 330 and the side surfaces of the upper electrode 340 are covered by the second insulating layer 398, such that the OLED device 1000 may further prevent or alleviate penetration or infiltration of moisture and / or humidity into the side surfaces of the light emitting layer 330 and the side surfaces of the upper electrode 340.

[0210] Figure 26 is a cross-sectional view showing an OLED device according to an exemplary embodiment of the present disclosure. Except for the second undercut structure 2400, Figure 26 the OLED device 1100 shown in Figures 1 to 6 may have a configuration that is substantially the same as or similar to that of the OLED device 100 described with reference to Figure 26 Regarding Figures 1 to 6 components that are substantially the same as or similar to the components described with reference to

[0211] Reference Figure 26, the OLED device 1100 may include a substrate 110, a first undercut structure 400, a second undercut structure 2400, a semiconductor element 250, a planarization layer 270, a light-emitting structure 200, a pixel definition layer 310, a thin-film encapsulation structure 450, a functional module 700, etc. In one or more embodiments, the substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Additionally, the first undercut structure 400 may include a sacrificial metal pattern 405, a first insulating layer pattern 410, a second insulating layer pattern 420, a third insulating layer pattern 430, and a fourth insulating layer pattern 440, and the second undercut structure 2400 may include a second sacrificial metal pattern 1405, a fifth insulating layer pattern 1410, a sixth insulating layer pattern 1420, a seventh insulating layer pattern 1430, and an eighth insulating layer pattern 1440.

[0212] In an exemplary embodiment, the substrate 110 may further include a first groove 930 and a second groove 935 formed in the peripheral region 30. The second groove 935 may be located between the first groove 930 and the functional module 700, and the first groove 930 may surround the second groove 935.

[0213] The first undercut structure 400 may be disposed inside the first groove 930 and spaced apart from the inner wall of the first groove 930, and the second undercut structure 2400 may be disposed inside the second groove 935 and spaced apart from the inner wall of the second groove 935.

[0214] Additionally, the light-emitting layer 330 and the upper electrode 340 may be spaced apart by the first undercut structure 400 and the second undercut structure 2400 inside the first groove 930 and the second groove 935, respectively. In other words, the light-emitting layer 330 and the upper electrode 340 may be interrupted by the first undercut structure 400 and the second undercut structure 2400 inside the first groove 930 and the second groove 935, respectively. Accordingly, the OLED device 1100 includes the light-emitting layer 330 and the upper electrode 340 that are interrupted by the first undercut structure 400 and the second undercut structure 2400 inside the first groove 930 and the second groove 935, respectively, such that penetration or infiltration of moisture and humidity, etc. into the semiconductor element 250 and the light-emitting structure 200 can be prevented or at least alleviated.

[0215] Embodiments of the present disclosure may be applied to various display devices including OLED devices. For example, embodiments of the present disclosure may be applied to in-vehicle display devices, on-ship display devices, on-aircraft display devices, portable communication devices, display devices for display or for information transmission, medical display devices, etc.

[0216] The foregoing is an illustrative example of exemplary embodiments and should not be construed as limiting thereof. Although some exemplary embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without departing from the novel teachings and advantages of the inventive concept in essence. Thus, all such modifications are intended to be included within the scope of the inventive concept as defined in the claims. Accordingly, it should be understood that the foregoing is an illustrative example of various exemplary embodiments and should not be construed as being limited to the specific exemplary embodiments disclosed, and that modifications to the disclosed exemplary embodiments as well as other exemplary embodiments are intended to be included within the scope of the appended claims.

Claims

1. An organic light-emitting display device, comprising: A substrate, comprising an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region, the substrate comprising a groove located in the peripheral region and an opening located in the opening region; A light-emitting structure located in the display region on the substrate; A semiconductor element located between the substrate and the light-emitting structure; An undercut structure located inside the groove in the substrate, the undercut structure comprising a sacrificial metal pattern having a first width and at least one insulating layer pattern having a second width greater than the first width; And A functional module located in the opening of the substrate, wherein the groove extends in the depth direction of the substrate to be lower than the semiconductor element.

2. The organic light-emitting display device according to claim 1, wherein, The undercut structure is spaced apart from the inner wall of the groove.

3. The organic light-emitting display device according to claim 1, wherein, The groove has a hollow circular shape surrounding the opening of the substrate in a plan view.

4. The organic light-emitting display device according to claim 1, wherein, The undercut structure located inside the groove has a hollow circular shape surrounding the opening in a plan view.

5. The organic light-emitting display device according to claim 1, wherein the substrate comprises: A first organic film layer; A first barrier layer located on the first organic film layer; A second organic film layer located on the first barrier layer, the second organic film layer comprising a first opening in the peripheral region; and A second barrier layer located on the second organic film layer, the second barrier layer comprising a second opening overlapping the first opening.

6. The organic light-emitting display device according to claim 5, wherein, The sacrificial metal pattern is located on the first barrier layer.

7. The organic light-emitting display device according to claim 5, wherein the at least one insulating layer pattern comprises: A first insulating layer pattern located on the sacrificial metal pattern; And A second insulating layer pattern located on the first insulating layer pattern.

8. The organic light-emitting display device according to claim 7, wherein, The first insulating layer pattern and the second organic film layer are in the same layer, and the second insulating layer pattern and the second barrier layer are in the same layer.

9. The organic light-emitting display device according to claim 5, wherein, The first opening and the second opening define the groove of the substrate.

10. The organic light-emitting display device according to claim 1, wherein the semiconductor element comprises: An active layer located in the display region on the substrate; A gate insulating layer covering the active layer in the display region on the substrate, the gate insulating layer comprising a third opening exposing the groove in the peripheral region; A gate electrode located in the display region on the gate insulating layer; An insulating interlayer covering the gate electrode in the display region on the gate insulating layer, the insulating interlayer comprising a fourth opening overlapping the third opening in the peripheral region; And A source electrode and a drain electrode located in the display region on the insulating interlayer.

11. The organic light-emitting display device according to claim 10, wherein the at least one insulating layer pattern comprises: A third insulating layer pattern located on the sacrificial metal pattern, the third insulating layer pattern being located inside the third opening; And A fourth insulating layer pattern located on the third insulating layer pattern, the fourth insulating layer pattern being located inside the fourth opening.

12. The organic light-emitting display device according to claim 11, wherein, The third insulating layer pattern and the gate insulating layer are in the same layer, and the fourth insulating layer pattern and the insulating interlayer are in the same layer.

13. The organic light-emitting display device according to claim 1, wherein the light-emitting structure comprises: A lower electrode; A light-emitting layer located on the lower electrode; And An upper electrode located on the light-emitting layer.

14. The organic light-emitting display device according to claim 13, wherein, The light-emitting layer extends on the substrate in a direction from the display region to the peripheral region, and wherein the light-emitting layer is interrupted by the undercut structure at a part where the groove is located.

15. The organic light-emitting display device according to claim 13, wherein, The upper electrode extends over the light-emitting layer in a direction from the display area to the peripheral area, and wherein the upper electrode is interrupted by the undercut structure at a part where the groove is located.

16. The organic light-emitting display device according to claim 13, wherein, The light-emitting layer and the upper electrode are at least partially located inside the groove.

17. The organic light-emitting display device according to claim 13, wherein, The light-emitting layer and the upper electrode are located on at least a part of the undercut structure.

18. The organic light-emitting display device according to claim 13, wherein, The light-emitting layer and the upper electrode do not directly contact the sacrificial metal pattern.

19. The organic light-emitting display device according to claim 13, further comprising: A thin-film encapsulation structure located on the light-emitting structure, wherein the thin-film encapsulation structure comprises: A first thin-film encapsulation layer located on the upper electrode, the first thin-film encapsulation layer comprising a flexible inorganic material; A second thin-film encapsulation layer located on the first thin-film encapsulation layer, the second thin-film encapsulation layer comprising a flexible organic material; and A third thin-film encapsulation layer located on the second thin-film encapsulation layer, the third thin-film encapsulation layer comprising the flexible inorganic material.

20. The organic light-emitting display device according to claim 19, wherein, Each of the first thin-film encapsulation layer and the third thin-film encapsulation layer extends over the upper electrode in a direction from the display area to the peripheral area, and wherein each of the first thin-film encapsulation layer and the third thin-film encapsulation layer is continuous at a part where the groove is located.

21. The organic light-emitting display device according to claim 19, wherein, The functional module is in contact with the side surface of the substrate, the side surface of the light-emitting layer, the side surface of the upper electrode, the side surface of the first thin-film encapsulation layer, and the side surface of the third thin-film encapsulation layer at the boundary between the peripheral area and the opening area.

22. The organic light-emitting display device according to claim 19, wherein, The sacrificial metal pattern includes side portions, and wherein two side portions of the sacrificial metal pattern directly contact the first thin-film encapsulation layer.

23. The organic light-emitting display device according to claim 1, wherein the groove in the substrate comprises: A first groove located in the peripheral area; and A second groove located between the first groove and the functional module, and wherein the first groove surrounds the second groove.

24. The organic light emitting display device according to claim 23, wherein the undercut structure comprises: A first undercut structure located inside the first groove; and A second undercut structure located inside the second groove.

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