Display device and method of manufacturing the same

Abstract

This invention relates to a display device and a method of manufacturing the display device. The display device includes: a substrate; a pixel electrode and a counter electrode facing each other; a thin-film transistor electrically connected to the pixel electrode; a contact electrode electrically connected to the counter electrode and spaced apart from the pixel electrode; an auxiliary electrode electrically connected to the contact electrode and spaced apart from the thin-film transistor; and an intermediate layer for emitting light therefrom, the intermediate layer including: an emitting layer; a first functional layer corresponding to the pixel electrode and the contact electrode, the first functional layer defining an opening therein exposing the contact electrode; and a multiple insulating layer between the thin-film transistor and the pixel electrode, between the auxiliary electrode and the contact electrode, and defining a contact opening therein where the auxiliary electrode is electrically connected to the contact electrode, the contact opening corresponding to the opening portion of the intermediate layer.

Description

[0001] This application claims priority and all rights to Korean Patent Application No. 10-2019-0031777, filed on March 20, 2019, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] One or more embodiments relate to a display device and a method of manufacturing the display device. More specifically, one or more embodiments relate to a display device that is relatively easy to manufacture and has relatively high brightness stability, and a method of manufacturing the display device. Background Technology

[0003] Organic light-emitting display devices have a relatively wider viewing angle, better contrast characteristics, and faster response speed than other display devices, and have therefore attracted attention as the next generation of display devices.

[0004] Organic light-emitting display devices include pixels, each pixel including an organic light-emitting diode (OLED). The OLED includes a pixel electrode, a counter electrode facing the pixel electrode, and an intermediate layer including an emission layer located between the pixel electrode and the counter electrode. In these organic light-emitting display devices, the pixel electrode has an island shape obtained by patterning material layers to correspond to individual units in the pixel, but the counter electrode has individual units corresponding to multiple pixels. Summary of the Invention

[0005] As the planar area of ​​organic light-emitting display devices increases, traditional organic light-emitting display devices cannot display high-quality images due to the voltage drop of the counter electrode provided as a single unit.

[0006] To address several drawbacks, including those described above, one or more embodiments include a display device that is relatively easy to manufacture and has high brightness stability, as well as a method for manufacturing the display device. However, the one or more embodiments are merely examples, and the scope of the invention is not limited thereto.

[0007] Additional features will be set forth in part in the description which follows and will be apparent in part from the description, or may be learned by practice of the proposed embodiments.

[0008] According to one or more embodiments, a display device includes: a substrate; a pixel electrode and a counter electrode facing each other on the substrate; a pixel circuit including a thin-film transistor, the pixel circuit being electrically connected to the pixel electrode at the thin-film transistor; a contact electrode electrically connected to the counter electrode, through which an electrical signal is transmitted to the counter electrode, the contact electrode and the pixel electrode being spaced apart from each other along the substrate; an auxiliary electrode electrically connected to the contact electrode, through which an electrical signal is transmitted to the contact electrode, the auxiliary electrode and the thin-film transistor being spaced apart from each other along the substrate; an intermediate layer through which light is emitted, the intermediate layer including: an emitting layer corresponding to the pixel electrode, and a first functional layer corresponding to the pixel electrode and the contact electrode, the first functional layer defining an opening where the contact electrode exposes to the outside of the intermediate layer; and a multiple insulating layer between the thin-film transistor and the pixel electrode and between the auxiliary electrode and the contact electrode, the multiple insulating layer defining a contact opening, the auxiliary electrode being electrically connected to the contact electrode at the contact opening, the contact opening corresponding to the opening of the intermediate layer.

[0009] According to one or more embodiments, the opening portion may include a first opening and a second opening spaced apart from each other; and the counter electrode may be electrically connected to the contact electrode at the first opening and the second opening.

[0010] According to one or more embodiments, the multiple insulating layers may include: an inorganic insulating layer and an organic insulating layer further away from the substrate than the inorganic insulating layer, and in the region corresponding to the first opening, the organic insulating layer may define an open portion where the counter electrode is electrically connected to the contact electrode.

[0011] According to one or more embodiments, in the region corresponding to the first opening, an inorganic insulating layer may be placed between the contact electrode and the auxiliary electrode to insulate the contact electrode from the auxiliary electrode.

[0012] According to one or more embodiments, in the region corresponding to the second opening, the organic insulating layer may include a first contact hole, at which the counter electrode is electrically connected to the contact electrode, and the inorganic insulating layer may define a second contact hole corresponding to the first contact hole, at which the contact electrode is electrically connected to the auxiliary electrode.

[0013] According to one or more embodiments, the intermediate layer may further include a second functional layer facing the first functional layer, the emission layer is between the first functional layer and the second functional layer, a first aperture may be defined in the first functional layer, and a second aperture may be defined in the second functional layer, and a first opening of the intermediate layer may be defined by the first aperture and the second aperture aligned with each other.

[0014] According to one or more embodiments, a third hole may be defined in a first functional layer, a fourth hole may be defined in a second functional layer, and a second opening may be defined by the third and fourth holes aligned with each other.

[0015] According to one or more embodiments, the intermediate layer may further include one or more of a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer.

[0016] According to one or more embodiments, the auxiliary electrode may include copper (Cu) and titanium (Ti).

[0017] According to one or more embodiments, the portion of the first functional layer defined at the first opening of the intermediate layer may be a modified portion of the first functional layer.

[0018] According to one or more embodiments, the thin-film transistor of the pixel circuit may include a semiconductor layer, a gate electrode corresponding to the semiconductor layer, and a connection electrode electrically connected to the semiconductor layer, and the auxiliary electrode and the connection electrode may be corresponding portions of the same material layer on the substrate.

[0019] According to one or more embodiments, the inorganic insulating layer can directly contact the connection electrode of the thin-film transistor to cover the thin-film transistor.

[0020] According to one or more embodiments, the contact electrode and the pixel electrode may be corresponding portions of the same material layer on the substrate.

[0021] According to one or more embodiments, the multiple insulating layers may include: an inorganic insulating layer and an organic insulating layer further away from the substrate than the inorganic insulating layer; and in the region corresponding to the opening portion of the first functional layer, the organic insulating layer may define an open portion where the counter electrode is electrically connected to the contact electrode.

[0022] According to one or more embodiments, in the region corresponding to the opening portion of the first functional layer, the inorganic insulating layer may define a contact opening corresponding to the open portion of the organic insulating layer, and the contact electrode is further electrically connected to an auxiliary electrode at the contact opening.

[0023] According to one or more embodiments, an inorganic insulating layer may be present between the contact electrode and the auxiliary electrode, except at the contact opening.

[0024] According to one or more embodiments, a method of manufacturing a display device includes: providing on a substrate: a pixel electrode and a counter electrode facing each other; a thin-film transistor electrically connected to the pixel electrode; a contact electrode electrically connected to the counter electrode, through which an electrical signal is transmitted to the counter electrode, the contact electrode being spaced apart from the pixel electrode; an auxiliary electrode electrically connected to the contact electrode, through which an electrical signal is transmitted to the contact electrode, the auxiliary electrode being spaced apart from the thin-film transistor; an inorganic insulating layer corresponding to the thin-film transistor and the auxiliary electrode; an organic insulating layer between the inorganic insulating layer and the pixel electrode and between the inorganic insulating layer and the contact electrode; an open portion in the organic insulating layer exposing the inorganic insulating layer to the outside of the organic insulating layer; and a contact opening in the organic insulating layer and the inorganic insulating layer exposing the auxiliary electrode to the outside of the organic insulating layer and the inorganic insulating layer; providing an intermediate layer by sequentially providing a first functional layer corresponding to the pixel electrode and the contact electrode and an emitting layer corresponding to the pixel electrode, light being emitted by the intermediate layer; removing the portion of the first functional layer corresponding to the contact electrode to provide an opening in the first functional layer exposing the contact electrode to the outside of the first functional layer; and contacting the counter electrode with the contact electrode at the opening in the first functional layer.

[0025] According to one or more embodiments, providing an opening includes: removing a portion of the first functional layer corresponding to the contact electrode by radiating a laser beam into the first functional layer.

[0026] According to one or more embodiments, providing an intermediate layer may further include: providing a second functional layer after providing an emitter layer, the second functional layer corresponding to a pixel electrode and a contact electrode, and the method may further include: removing the portion of the first functional layer corresponding to the contact electrode while removing the portion of the second functional layer corresponding to the contact electrode, so as to provide an opening in both the first functional layer and the second functional layer.

[0027] According to one or more embodiments, the open portion may be larger than the contact opening.

[0028] These and / or other features will become apparent and more readily understood from the following description of the embodiments, claims, and drawings.

[0029] These general and specific embodiments can be implemented by using systems, methods, computer programs, or combinations thereof. Attached Figure Description

[0030] These and / or other features will become apparent and more readily understood from the following description of embodiments in conjunction with the accompanying drawings, wherein:

[0031] Figure 1 This is a schematic top view of an embodiment of the display device;

[0032] Figure 2 This is an equivalent circuit diagram of an embodiment of a pixel of a display device;

[0033] Figures 3 to 6 This is a cross-sectional view illustrating the process and structure in an embodiment of a method for manufacturing a display device; and

[0034] Figure 7 and Figure 8 This is a cross-sectional view illustrating the process and structure in another embodiment of a method for manufacturing a display device. Detailed Implementation

[0035] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this regard, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the following description of embodiments is intended to illustrate the features of this description only by referring to the accompanying drawings.

[0036] As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of…”, when following a list of elements, modify the entire list of elements and not any individual element of the list. “At least one” is not to be construed as limiting “one”. “Or” means “and / or”. As used herein, the singular forms “one” and “the” are intended to also include the plural forms unless the context clearly indicates otherwise.

[0037] It will be understood that although the terms “first,” “second,” etc., may be used in this document to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another.

[0038] It will be further understood that the terms “comprising” and / or “including” as used herein specify the presence of the stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0039] It will be understood that when a layer, region, or component is referred to as relating to another layer, region, or component, such as being “on” another layer, region, or component, that layer, region, or component may be formed directly or indirectly on the other layer, region, or component. That is, for example, intermediate layers, regions, or components may exist. Conversely, when a layer, region, or component is referred to as relating to another layer, region, or component, such as being “directly” on another layer, region, or component, there is no intermediate layer, region, or component.

[0040] Furthermore, related terms such as “below” or “bottom” and “above” or “top” may be used herein to describe the relationship between one element and another as illustrated in the accompanying drawings. It will be understood that these related terms are intended to cover different orientations of the device other than those depicted in the accompanying drawings. For example, if one of the devices in the accompanying drawings is flipped, an element described as being “below” another element will then be positioned “above” another element. Thus, depending on the specific orientation of the drawing, the exemplary term “below” can cover both “below” and “above” orientations. Similarly, if one of the devices in the accompanying drawings is flipped, an element described as being “below” or “under” another element will then be positioned “above” another element. Thus, the exemplary terms “below” and “under” can cover both “above” and “below” orientations.

[0041] Taking into account the measurements discussed and the errors associated with the measurement of a specific quantity (i.e., limitations of the measurement system), as used herein, “about” or “approximately” includes the stated value and means within an acceptable deviation of the specific value as determined by one of ordinary skill in the art. For example, “about” may mean within one or more standard deviations, or within ±30%, 20%, 10%, or 5% of the stated value.

[0042] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms such as those defined in common dictionaries shall be interpreted as having a meaning consistent with their meaning in the context of the relevant art and in this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0043] For ease of explanation, the dimensions of the elements in the figures may be exaggerated. In other words, since the dimensions and thicknesses of the components in the figures are arbitrarily shown for ease of explanation, the following embodiments are not limited thereto. Exemplary embodiments are described herein with reference to cross-sectional views as schematic illustrations of rationalized embodiments. Thus, variations in shape from the illustrations can be expected as a result of, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shape of the areas illustrated herein, but will include deviations in shape from, for example, manufacturing processes. For example, areas illustrated or described as flat may typically have rough and / or non-linear characteristics. Furthermore, the illustrated sharp corners may be rounded. Therefore, the areas illustrated in the figures are actually schematic, and the shape of the area is not intended to illustrate the precise shape of the area and is not intended to limit the scope of the claims.

[0044] In the examples below, the x-axis, y-axis, and z-axis are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other.

[0045] When an embodiment can be implemented differently, a particular process sequence can be performed in a different order than that described. For example, two consecutively described processes can be performed substantially simultaneously, or in the reverse order of their description.

[0046] Figure 1 This is a schematic top plan view of an embodiment of the display device, and Figure 2 This is an equivalent circuit diagram of an embodiment of the pixels of a display device.

[0047] refer to Figure 1 The display device 10 may include a display area DA and a peripheral area PA adjacent to the display area DA. In an embodiment, in a top view, the peripheral area PA may surround the display area DA. As an overall top view indicating the display device 10, Figure 1 The substrate 100 of the display device 10 is indicated. An image is displayed and / or light is emitted in the display area DA. In the peripheral area PA, an image may not be displayed and / or light may not be emitted, thus defining a non-display area.

[0048] The display device 10 and / or various components of the display device 10 may include a display area DA and a peripheral area PA. (See reference) Figure 1 For example, substrate 100 may include a display area DA and a peripheral area PA. Display device 10 and / or various components of display device 10 may be arranged in a plane defined by a first direction and a second direction that intersect each other. (Reference) Figure 1 The substrate 100 is disposed in a plane defined by the x-axis and y-axis directions. The thickness of the display device 10 and / or various components of the display device 10 is defined along a third direction intersecting each of the first and second directions. (Reference) Figure 3 The thickness of the substrate 100 and various layers on the substrate 100 is defined along the z-axis direction.

[0049] The display device 10 includes a plurality of pixels P (e.g., a plurality of pixels P or a single pixel P) arranged in a display area DA. Reference Figure 2Each pixel P may include a pixel circuit PC and an organic light-emitting diode (OLED) connected to the pixel circuit PC as a display element (e.g., a light-emitting element). The pixel circuit PC may include a first thin-film transistor (“TFT”) T1, a second TFT T2, and a storage capacitor Cst. Each pixel P may emit, for example, red, green, blue, or white light through the OLED. Using the light emitted from the OLED, an image can be displayed at pixel P.

[0050] A second TFT T2 (e.g., a switching TFT T2) can be connected to a scan line SL and a data line DL, and transmits a data voltage received via the data line DL to the first TFT T1 based on a switching voltage received via the scan line SL. A storage capacitor Cst can be connected to the second TFT T2 and a drive voltage line PL, and can store a voltage corresponding to the difference between the voltage received from the second TFT T2 and a first power supply voltage ELVDD supplied to the drive voltage line PL. That is, the various lines described herein can represent signal lines through which electrical signals (e.g., data signals, control signals, drive signals, and / or power signals) are transmitted. In embodiments, electrical signals may include data voltages, switching voltages, power supply voltages, scan signals, data signals, etc.

[0051] A first TFT T1 (e.g., a driving TFT T1) can be connected to a driving voltage line PL and a storage capacitor Cst, and the electrical driving current flowing from the driving voltage line PL to the organic light-emitting diode (OLED) can be controlled according to the voltage value stored in the storage capacitor Cst. The OLED can generate and / or emit light with a certain brightness through the electrical driving current. The counter electrode (e.g., the cathode) of the OLED can receive a second power supply voltage ELVSS.

[0052] Despite Figure 2 The illustration shows a pixel circuit PC comprising two TFTs and one storage capacitor Cst, but the embodiment is not limited to this. The number of TFTs and the number of storage capacitors Cst can vary depending on the design of the pixel circuit PC. In an embodiment, for example, in addition to the two TFTs described above, the pixel circuit PC may further include four, five, or more TFTs.

[0053] Return to reference Figure 1A scan driver 1100 that generates scan signals and / or provides scan signals to each pixel P in pixel P, a data driver 1200 that generates data signals and / or provides data signals to each pixel P in pixel P, and main power wiring (not shown) that provides a first power supply voltage ELVDD and a second power supply voltage ELVSS through them can be arranged in the peripheral area PA. Figure 1 In this embodiment, the data driver 1200 is located on one side of the substrate 100. However, according to another embodiment, the data driver 1200 may be located outside the substrate 100, such as on a flexible printed circuit board (“FPCB”) electrically connected to the pads of the display device 10. In this embodiment, the pads may be disposed on the substrate 100, and the FPCB may be connected to the display device 10 at the pads.

[0054] Figures 3 to 6 This is a cross-sectional view illustrating the process and structure in an embodiment of a method for manufacturing a display device. It will be understood that the various layers provided in the following description on the substrate 100 may exist... Figure 1 On substrate 100, but for ease of illustration, Figure 1 The term is omitted. In the embodiment, Figures 3 to 6 The left side of the view in the middle can be connected to the outer area PA ( Figure 1 ) corresponds to, and Figures 3 to 6 The right side of the view in the middle can be aligned with the display area DA ( Figure 1 (This corresponds to, but is not limited to, this.)

[0055] refer to Figure 3 Pixel electrodes 210 and contact electrodes 210a, spaced apart from each other, can be provided or formed on the substrate 100. Although in Figure 3 The middle pixel electrode 210 and the contact electrode 210a are provided or formed on the organic insulating layer 170, but the embodiments are not limited thereto.

[0056] Various layers can be provided or formed separately between the pixel electrode 210 and the contact electrode 210a and the substrate 100. (Reference) Figures 3 to 6 Thin-film transistors (TFTs) and capacitors (CAPs) are provided or formed on substrate 100, and multiple insulating layers (MILs) (e.g., insulating multilayer MILs) are provided or formed to cover the TFTs and capacitors (CAPs). Pixel electrodes 210 and contact electrodes 210a are provided or formed on the multiple insulating layers (MILs).

[0057] The substrate 100 may include any of a variety of materials, such as glass, metal, or plastics such as polyethylene terephthalate (“PET”), polyethylene naphthalate (“PEN”), or polyimide (“PI”).

[0058] Pixel circuitry PC for providing electrical signals to a display element (e.g., an organic light-emitting diode OLED) is provided or formed on substrate 100. Pixel circuitry PC may include thin-film transistors (TFTs) and capacitors (CAPs). In an embodiment, electrical signals can be provided from outside the display area DA to the display element within the display area DA.

[0059] Specifically, in order to planarize the surface of the substrate 100 and / or prevent impurities from penetrating into the semiconductor layer 120 of the thin-film transistor (TFT), a buffer layer 110 may be disposed on the substrate 100. The buffer layer 110 may include silicon oxide (SiO2). x ), silicon nitride (SiN) x (and / and silicon oxynitride (SiON), and the semiconductor layer 120 may be located on the buffer layer 110.)

[0060] The gate electrode 140 of the thin-film transistor TFT is disposed on the semiconductor layer 120. The source electrode 160s and drain electrode 160d of the thin-film transistor TFT are in electrical communication with each other in response to a signal applied to the gate electrode 140. In embodiments, for example, considering adhesion to adjacent layers, surface smoothness of layers stacked on the gate electrode 140, and processability, the gate electrode 140 may comprise at least one selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), or formed thereof, in a single-layer or multi-layer structure.

[0061] To ensure insulation between the semiconductor layer 120 and the gate electrode 140 within the thin-film transistor (TFT), a gate insulating layer 130 may be located between the semiconductor layer 120 and the gate electrode 140. (Reference) Figure 3 The gate insulating layer 130 may further be located within the capacitor CAP. That is, the gate insulating layer 130 described above may be a corresponding portion of the same gate insulating material layer. The gate insulating layer 130 may include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, or hafnium oxide.

[0062] Interlayer insulating layer 150 may be disposed on gate electrode 140 and may comprise inorganic insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, or hafnium oxide. Interlayer insulating layer 150 may be provided or formed as a single-layer structure or a multilayer structure comprising one or more of the above materials.

[0063] Source electrodes 160s and drain electrodes 160d, each an electrode electrically connected to the semiconductor layer 120 of the thin-film transistor (TFT), are disposed on the interlayer insulating layer 150. The source electrodes 160s and drain electrodes 160d are electrically connected to the semiconductor layer 120 through contact holes provided or formed in the interlayer insulating layer 150 and the gate insulating layer 130. Considering conductivity, etc., each of the source electrodes 160s and drain electrodes 160d may comprise, or be formed of, at least one of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) in a single-layer or multi-layer structure. According to an embodiment, each of the source electrodes 160s and drain electrodes 160d, serving as connection electrodes, may be provided or formed as a Ti / Al / Ti or Mo / Al / Mo three-layer structure. According to an embodiment, each of the source electrode 160s and the drain electrode 160d can be provided or formed as a Cu / Ti multilayer structure.

[0064] To protect the thin-film transistor TFT having the aforementioned layers and to planarize the upper surface of the thin-film transistor TFT, a multiple insulating layer (MIL) can be provided or formed on the thin-film transistor TFT. According to this embodiment, the multiple insulating layer (MIL) may include an inorganic insulating layer 165 that is in direct contact with the source electrode 160s and drain electrode 160d of the thin-film transistor TFT, and an organic insulating layer 170 that provides a planar upper surface on which the pixel electrode 210 is provided or formed.

[0065] During the manufacture of the display device 10, the inorganic insulating layer 165 can prevent conductive wiring or conductive elements (e.g., signal lines) including metals (such as aluminum) that may be damaged by etchants from being exposed to etching materials and / or etching environments (e.g., etchants). The inorganic insulating layer 165 may include materials such as silicon oxide (SiO2). x ), silicon nitride (SiN) x Inorganic materials such as silicon nitride (SiON) or / and silicon oxynitride (SiON) can be provided or formed as a multilayer or monolayer structure. According to an embodiment, the inorganic insulating layer 165 may include silicon nitride (SiON). x ).

[0066] Inorganic insulating layer 165 can have at least about 500 angstroms The thickness. According to another embodiment, the thickness of the inorganic insulating layer 165 can be equal to or greater than approximately [the thickness of the inorganic insulating layer]. It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately It can be equal to or greater than approximately Or it can be equal to or greater than approximately Alternatively, the inorganic insulating layer 165 can have approximately up to approximately The thickness.

[0067] The organic insulating layer 170 may be disposed on the inorganic insulating layer 165, but positioned further away from the substrate 100 than the inorganic insulating layer 165. The upper surface of the organic insulating layer 170 may be approximately flat. The organic insulating layer 170 may comprise an organic insulating material, such as polymethyl methacrylate (“PMMA”) or polystyrene (“PS”), polymer derivatives having phenolic groups, acryloyl ether polymers, imide polymers, acryloyl polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, or blends thereof. According to an embodiment, the organic insulating layer 170 may comprise polyimide.

[0068] Pixel electrode 210 may be on organic insulating layer 170. Pixel electrode 210 may include conductive oxides such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (“ZnO”), indium oxide (“In2O3”), indium gallium oxide (“IGO”), or zinc aluminum oxide (“AZO”). According to another embodiment, pixel electrode 210 may reflect light, for example, by including a reflective layer or reflective material. Pixel electrode 210 may include, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or combinations of these materials. According to another embodiment, pixel electrode 210 may further include a relatively thin layer or film provided or formed of ITO, IZO, ZnO, or In2O3. Such a thin layer or film may be disposed above or below the reflective layer.

[0069] A pixel defining layer 180 may be disposed on the pixel electrode 210. The pixel defining layer 180 may define or include openings that expose the upper surface of the pixel electrode 210 and may cover the edges of the pixel electrode 210. The openings in the pixel defining layer 180 may correspond to or define the light-emitting region of pixel P. The pixel defining layer 180 may include an organic insulating material. Alternatively, the pixel defining layer 180 may include materials such as silicon nitride (SiN). x ), silicon oxynitride (SiON) or silicon oxide (SiO) xThe inorganic insulating material. Alternatively, the pixel defining layer 180 may include both organic and inorganic insulating materials.

[0070] Intermediate layer 220 includes an emitting layer 223. Intermediate layer 220 may include a first functional layer 221 (e.g., an initial first functional material layer 221) below the emitting layer 223 and / or a second functional layer 222 (e.g., an initial second functional material layer 222) above the emitting layer 223. Emitting layer 223 may include a relatively low molecular weight organic material or a relatively high molecular weight organic material used to generate and / or emit light of a certain color.

[0071] refer to Figure 3 Initial first functional material layer 221 and initial second functional material layer 222 are first provided or formed on substrate 100 (e.g., along the entire substrate 100). In an embodiment, initial first functional material layer 221 and initial second functional material layer 222 are integrated with display area DA ( Figure 1 ) and the outer area PA ( Figure 1 Correspondingly, it is provided. For ease of explanation, the following description of the method refers to the first functional layer 221 and the second functional layer 222; however, it will be understood that the intermediate processes for forming these layers include the initial formation of material layers for forming the first functional layer 221 and the second functional layer 222.

[0072] The first functional layer 221 may include a monolayer or a multilayer structure. In embodiments, for example, when the first functional layer 221 is provided or formed of a relatively high molecular weight organic material, the first functional layer 221 may include a hole transport layer (“HTL”) having a monolayer structure and may include poly(3,4)-ethylene-dihydroxythiophene (“PEDOT”) or polyaniline (“PANI”). On the other hand, when the first functional layer 221 is provided or formed of a relatively low molecular weight organic material, the first functional layer 221 may include a hole injection layer (“HIL”) and an HTL.

[0073] The second functional layer 222 may be omitted. In embodiments, for example, when the first functional layer 221 and the emitter layer 223 are provided or formed of a relatively high molecular weight material, the second functional layer 222 may be included in a stacked structure on the substrate 100 as described above. The second functional layer 222 may include a single-layer structure or a multi-layer structure. The second functional layer 222 may include an electron transport layer (“ETL”) and / or an electron injection layer (“EIL”).

[0074] The emitting layer 223 of the intermediate layer 220 can be arranged in each pixel P within the display area DA. The emitting layer 223 can be patterned as discrete elements to correspond to the pixel electrode 210. In contrast to the emitting layer 223, a first functional layer 221 and / or a second functional layer 222 of the intermediate layer 220 can be provided or formed to correspond to a plurality of pixels P. In an embodiment, the first functional layer 221 and / or the second functional layer 222 of the intermediate layer 220 can correspond to the entire display area DA, similar to the counter electrode 230 described later. Figure 6 The structure is as follows. In an embodiment, the first functional layer 221 and / or the second functional layer 222 of the intermediate layer 220 may further correspond to the peripheral region PA.

[0075] The counter electrode 230 may include a conductive material having a relatively low work function. In embodiments, for example, the counter electrode 230 may include a (semi-)transparent material layer comprising, for example, silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys of these materials. Alternatively, the counter electrode 230 may further include a material layer such as ITO, IZO, ZnO, or In2O3 on a (semi-)transparent material layer comprising any of the materials described above. In embodiments of manufacturing the display device 10, the first functional layer 221, the second functional layer 222, and the counter electrode 230 may be provided or formed by thermal deposition of materials used to form the respective layers or electrodes.

[0076] The auxiliary electrode 160a can be disposed on the interlayer insulating layer 150 on one side of the pixel circuit PC. In an embodiment, the auxiliary electrode 160a can be disposed in the peripheral region PA ( Figure 1 The auxiliary electrode 160a can be provided or formed using the same process as that used to form the source electrode 160s and the drain electrode 160d. The electrodes of the capacitor CAP can be provided or formed using the same process as that used to form the source electrode 160s and the drain electrode 160d. Therefore, the electrodes of the auxiliary electrode 160a and / or the capacitor CAP can comprise the same materials as those included in the source electrode 160s and the drain electrode 160d. (See reference...) Figure 3 Similar shadow line patterns exist in the image. The auxiliary electrode 160a, the electrode of capacitor CAP, the source electrode 160s, and the drain electrode 160d can be corresponding portions of the same material layer on the substrate 100, and can be portions formed separately from the same material layer in the method of manufacturing the display device 10. According to an embodiment, the auxiliary electrode 160a can be provided or formed as a Cu / Ti multilayer structure.

[0077] Multiple insulating layers (MIL) can be disposed on the auxiliary electrode 160a. The inorganic insulating layer 165 can directly contact the auxiliary electrode 160a to prevent the auxiliary electrode 160a from being exposed to the etching environment according to subsequent processes, and can reduce or effectively prevent the auxiliary electrode 160a from separating from other layers on the substrate 100.

[0078] The multi-insulating layer MIL may have a contact portion CT (e.g., a contact opening CT) at which a portion of the upper surface of the auxiliary electrode 160a is exposed. The contact portion CT (e.g., a contact opening CT) may be provided or formed simultaneously with the provision or formation of a contact hole CNT for electrically connecting the pixel electrode 210 to the drain electrode 160d of the thin-film transistor TFT. The contact portion CT may include a first contact hole 170h2 defined in the organic insulating layer 170 and a second contact hole 165h defined in the inorganic insulating layer 165. The first contact hole 170h2 and the second contact hole 165h may correspond to or be aligned with each other to form the contact portion CT as a continuous hole. A contact region CTA may be provided or formed at which the contact electrode 210a, described later, is electrically connected to the auxiliary electrode 160a via the contact portion CT.

[0079] The multi-insulating layer MIL may also have an open portion OP (e.g., an opening OP), where a portion of the organic insulating layer 170 is omitted. The open portion OP may be defined by an open hole 170h1 in the organic insulating layer 170, where a portion of the inorganic insulating layer 165 is exposed. An open region OPA may be defined at the open portion OP, where a portion of the inorganic insulating layer 165 is exposed through the open portion OP.

[0080] exist Figure 3 In this embodiment, the organic insulating layer 170 defines or includes both an open hole 170h1 defining an open portion OP and a first contact hole 170h2 defining a contact portion CT. The open hole 170h1 and the first contact hole 170h2 are spaced apart from each other in a direction along the substrate 100 (e.g., along the x-axis). However, the embodiment is not limited thereto.

[0081] According to the modified embodiment, Figure 3 The open hole 170h1 and the first contact hole 170h2 can be connected to each other, and thus can form a shape like... Figure 7 The image shows a single opening. (Reference) Figure 7 A contact portion CT' exposing a part of the auxiliary electrode 160a can be provided or formed in the inorganic insulating layer 165, and an open portion OP' corresponding to the contact portion CT' and having a larger size than the contact portion CT' along the substrate 100 can be provided or formed in the organic insulating layer 170. Although Figures 3 to 6 as well as Figure 7 The x-axis direction is shown. Figure 1 ),but Figure 3 and Figure 7 The structure in the text can also be applied along the y-axis.

[0082] exist Figure 7 In this configuration, a portion of the auxiliary electrode 160a can be exposed via a contact portion CT' located within the open portion OP'. The exposed portion of the auxiliary electrode 160a defines a contact area CTA', at which the contact electrode 210a and the auxiliary electrode 160a are connected to each other. The portion of the open portion OP' excluding the contact area CTA' can be understood as the open area OPA'. That is, the contact area CTA' and the open area OPA' define the entire open portion OP'. There is no electrical contact between the elements in the open area OPA', but the open area OPA' can reduce degassing, which will be described later. An inorganic insulating layer 165, excluding the contact portion CT', lies between the contact electrode 210a and the auxiliary electrode 160a.

[0083] Contact electrode 210a can be disposed on auxiliary electrode 160a, with a multi-insulating layer MIL between contact electrode 210a and auxiliary electrode 160a. Contact electrode 210a can be electrically connected to auxiliary electrode 160a at the contact portion CT. Contact electrode 210a can be provided or formed at the open portion OP. Contact electrode 210a can be located in the open portion OP and can be insulated from auxiliary electrode 160a by the inorganic insulating layer 165 between contact electrode 210a and auxiliary electrode 160a. In an embodiment, contact electrode 210a can be disposed in the peripheral region PA ( Figure 1 The contact electrode 210a may be provided or formed using the same process as that used to form the pixel electrode 210, and may comprise the same material as that included in the pixel electrode 210. (See also...) Figure 3 Similar shadow line patterns can be found in the contact electrode 210a and pixel electrode 210, which can be corresponding portions of the same material layer on the substrate 100, and can be portions formed separately from the same material layer in the method of manufacturing the display device 10.

[0084] In this way, apart from the contact portion CT where the auxiliary electrode 160a and the contact electrode 210a are electrically connected to each other, an open region OPA (i.e., open portion OP) where a portion of the organic insulating layer 170 is omitted can be further included, and thus the occurrence of degassing in the organic insulating layer 170, which includes organic insulating material, during the manufacture of the display device 10 can be reduced.

[0085] refer to Figure 4 The laser beam LB can be radiated onto the portions of the initial first functional material layer 221 and the initial second functional material layer 222 that correspond to the contact portion CT and the open portion OP. Due to the radiation of the laser beam LB, the corresponding portions of the initial first functional material layer 221 and the initial second functional material layer 222 used to form the first functional layer 221 and the second functional layer 222 can be removed from the contact portion CT and the open portion OP.

[0086] like Figure 5 As shown, the opening portion 220H can be provided, formed, or defined in the initial first functional material layer 221 from which the first functional layer 221 is formed and the initial second functional material layer 222 from which the second functional layer 222 is formed. The opening portion 220H may include a first opening 220a and a second opening 220b spaced apart from each other along the substrate 100. Specifically, in each of the initial first functional material layer 221 from which the first functional layer 221 is formed and the initial second functional material layer 222 from which the second functional layer 222 is formed, a first opening 220a corresponding to the opening portion OP and a second opening 220b corresponding to the contact portion CT can be provided or formed. Since the first opening 220a and the second opening 220b are provided or formed by removing corresponding portions of the initial first functional material layer 221 from which the first functional layer 221 is formed and the initial second functional material layer 222 from which the second functional layer 222 is formed, such as by using a laser beam LB, the portions of the first functional layer 221 and the second functional layer 222 that define the first opening 220a and the second opening 220b (e.g., side surfaces) can be portions that are deformed by relatively high heat (e.g., thermally deformed portions).

[0087] The first opening 220a may include a first hole 221a defined in the initial first functional material layer 221 and a second hole 222a defined in the initial second functional material layer 222. The second opening 220b may include a third hole 221b defined in the initial first functional material layer 221 and a fourth hole 222b defined in the initial second functional material layer 222. The first hole 221a and the second hole 222a may correspond to or be aligned with each other, and the third hole 221b and the fourth hole 222b may correspond to or be aligned with each other.

[0088] refer to Figure 5Similar to the shadow pattern in the image, the portions of the first functional layer 221 at the opposite sides of the first hole 221a and the third hole 221b, and at the pixel P (e.g., corresponding to and extending from the light-emitting area at the emitting layer 223), can be corresponding portions of the same material layer on the substrate 100, and can be portions formed from the same initial material layer in the method of manufacturing the display device 10. Similarly, the portions of the second functional layer 222 at the opposite sides of the second hole 222a and the fourth hole 222b, and at the pixel P (e.g., corresponding to and extending from the light-emitting area at the emitting layer 223), can be corresponding portions of the same material layer on the substrate 100, and can be portions formed from the same initial material layer in the method of manufacturing the display device 10.

[0089] According to this embodiment, the intermediate layer 220 includes both a first functional layer 221 and a second functional layer 222. However, according to another embodiment, the second functional layer 222 may be omitted. In this case, the first opening 220a may include only the first hole 221a defined in the first functional layer 221, and the second opening 220b may include only the third hole 221b defined in the first functional layer 221.

[0090] Despite Figure 5 The first opening 220a and the second opening 220b of the opening portion 220H are spaced apart from each other, but the embodiments of this disclosure are not limited thereto. According to a modified embodiment, Figure 5 The first opening 220a and the second opening 220b can be connected to each other, and thus can form as shown in the figure. Figure 7 The single opening 220H shown is continuous along the substrate 100.

[0091] Counter electrode 230 can be provided or formed in Figure 7 On the stacked structure, and therefore as Figure 8 The structures shown can be provided or formed. Figure 7 and Figure 8 The structure described above can be understood as a diagram of a single structure provided or formed by one or more manufacturing operations.

[0092] Return to reference Figure 5 The width W2 of the first opening 220a along the substrate 100 (e.g., in the x-axis direction) may be smaller than the width W1 of the open portion OP in the open region OPA along the substrate 100 (e.g., in the x-axis direction), but the embodiments of this disclosure are not limited thereto.

[0093] refer to Figure 6 The counter electrode 230 can be provided or formed in Figure 5In a stacked structure, such as within the overall display area DA, the counter electrode 230 can be arranged opposite the pixel electrode 210, with an intermediate layer 220 between the counter electrode 230 and the pixel electrode 210. The counter electrode 230 can extend from the intermediate layer 220 to the first opening 220a and the second opening 220b. The counter electrode 230 can directly contact the contact electrode 210a at the first opening 220a and the second opening 220b.

[0094] In the display device 10 and the method of manufacturing the display device 10 according to this embodiment, an auxiliary electrode 160a and a contact electrode 210a electrically connecting the counter electrode 230 to the auxiliary electrode 160a are provided or formed, such that an electrical signal is transmitted to the counter electrode 230 through the auxiliary electrode 160a and the contact electrode 210a, which have relatively high conductivity. Therefore, the decrease in internal resistance (“IR”) in the counter electrode 230 that may occur in a conventional structure without the auxiliary electrode 160a and the contact electrode 210a can be effectively prevented or minimized. Therefore, the generation of unexpected brightness deviations in multiple pixels P can be reduced or effectively prevented, or brightness deviations can be minimized.

[0095] For the contact between electrode 230 and auxiliary electrode 160a, such as Figure 6 As shown, at least a portion of the contact electrode 210a should not be covered by the first functional layer 221 and the second functional layer 222. Therefore, when the initial first functional material layer 221 from which the first functional layer 221 is derived and the initial second functional material layer 222 from which the second functional layer 222 is derived are first provided or formed on the substrate 100 in a conventional display device, the initial first functional material layer 221 and the initial second functional material layer 222 can be selectively omitted at a portion of the contact electrode 210a. However, in methods of forming conventional display devices, a mask is used to pattern the initial first functional material layer 221 and the initial second functional material layer 222, and to provide the first functional layer 221 and the second functional layer 222. Therefore, the manufacturing process of a conventional display device can be complex, including processes in which the mask and the substrate 100 are precisely aligned with each other.

[0096] However, in one or more embodiments of the method of manufacturing the display device 10, the initial first functional material layer 221 and the initial second functional material layer 222 are first provided or formed on the substrate 100 (e.g., along the entire substrate 100), and manufacturing efficiency can be greatly improved by selectively removing only the corresponding portions of the initial first functional material layer 221 and the initial second functional material layer 222 corresponding to the contact electrode 210a, such as by using a laser beam.

[0097] Although this disclosure has been specifically shown and described with reference to exemplary embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made to this disclosure without departing from the spirit and scope defined by the appended claims. As described above, embodiments of this disclosure can provide a display device that is easy to manufacture and has relatively high brightness stability, and a method for manufacturing the display device. Of course, the scope of this disclosure is not limited by this effect.

[0098] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for limiting purposes. The description of features within each embodiment should typically be considered as other similar features that may be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various modifications of form and detail may be made to one or more embodiments without departing from the spirit and scope defined by the appended claims.

Claims

1. A display device, comprising: substrate; Pixel electrodes and counter electrodes facing each other on the substrate; A pixel circuit including a thin-film transistor, the pixel circuit being electrically connected at the thin-film transistor to the pixel electrode; A contact electrode is electrically connected to the counter electrode, and an electrical signal is transmitted to the counter electrode through the contact electrode. The contact electrode and the pixel electrode are spaced apart from each other along the substrate. An auxiliary electrode is electrically connected to the contact electrode, and the electrical signal is transmitted to the contact electrode through the auxiliary electrode. The auxiliary electrode and the thin-film transistor are spaced apart from each other along the substrate. An intermediate layer through which light is emitted, the intermediate layer comprising: an emitting layer on the pixel electrode, and a first functional layer on the pixel electrode and the contact electrode, the first functional layer defining an opening at which the contact electrode is exposed to the outside of the intermediate layer; and Multiple insulating layers between the thin-film transistor and the pixel electrode, and between the auxiliary electrode and the contact electrode. The opening portion of the intermediate layer includes a first opening and a second opening spaced apart from each other along the substrate, wherein the first opening is closer to the pixel electrode than the second opening; The multiple insulating layers include an inorganic insulating layer and an organic insulating layer that is further away from the substrate than the inorganic insulating layer; In the region below the first opening, the organic insulating layer defines an open portion, at which the counter electrode is electrically connected to the contact electrode; and In the entire region below the first opening, the inorganic insulating layer is located between the contact electrode and the auxiliary electrode.

2. The display device according to claim 1, wherein, The counter electrode is electrically connected to the contact electrode at the first opening and the second opening.

3. The display device according to claim 2, wherein, In the region below the second opening, The organic insulating layer defines a first contact hole, and the counter electrode is electrically connected to the contact electrode at the first contact hole. The inorganic insulating layer defines a second contact hole below the first contact hole, and the contact electrode is electrically connected to the auxiliary electrode at the second contact hole.

4. The display device according to claim 2, wherein, The intermediate layer further includes a second functional layer facing the first functional layer, and the emission layer is located between the first functional layer and the second functional layer. The first hole is defined in the first functional layer, and the second hole is defined in the second functional layer. The first opening in the intermediate layer is defined by a first hole and a second hole aligned with each other.

5. The display device according to claim 4, wherein, The third hole is defined in the first functional layer, and the fourth hole is defined in the second functional layer. The second opening in the intermediate layer is defined by the third and fourth holes aligned with each other.

6. The display device according to claim 1, wherein, The intermediate layer further includes one or more of a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer.

7. The display device according to claim 1, wherein, The auxiliary electrode comprises copper and titanium.

8. The display device according to claim 2, wherein, The portion of the first functional layer that is confined at the first opening in the intermediate layer is a modified portion of the first functional layer.

9. The display device according to claim 2, wherein, The thin-film transistor of the pixel circuit includes a semiconductor layer, a gate electrode on the semiconductor layer, and a connection electrode electrically connected to the semiconductor layer. The auxiliary electrode and the connecting electrode are made of the same material.

10. The display device according to claim 9, wherein, The inorganic insulating layer directly contacts the connection electrode of the thin-film transistor to cover the thin-film transistor.

11. The display device according to claim 1, wherein, The contact electrode and the pixel electrode are made of the same material.

12. The display device according to claim 1, wherein, In the region below the opening portion of the first functional layer, the inorganic insulating layer defines a contact opening below the second opening, and the contact electrode is further electrically connected to the auxiliary electrode at the contact opening; and In the region below the opening portion of the first functional layer, except at the contact opening, the inorganic insulating layer is located between the contact electrode and the auxiliary electrode.

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