Display device and method for manufacturing the same

Abstract

The present application relates to a display device and a manufacturing method thereof. The display device includes: a substrate including a display area and a non-display area; a plurality of display elements disposed in the display area and including a pixel electrode, a common layer, a light-emitting layer, and a counter electrode; and a pixel defining layer having an opening exposing a central portion of the pixel electrode, wherein the common layer includes a first region disposed between a first light-emitting layer and a second light-emitting layer, the first light-emitting layer is disposed in a first display element among the plurality of display elements, the second light-emitting layer is disposed in a second display element adjacent to the first display element among the plurality of display elements, and wherein the first region has protrusions spaced apart from each other.

Description

[0001] Cross - reference to related applications

[0002] This application claims the benefit of Korean Patent Application No. 10 - 2019 - 0103306, filed on Aug. 22, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical field

[0003] One or more embodiments relate to a display device and a method of manufacturing the display device. Background art

[0004] With the development of the information society, the demand for display devices for displaying images in various forms has increased. The field of display devices has rapidly shifted to flat - panel display devices (FPDs) that are thin, light, and large - area, which have replaced the bulky cathode - ray tubes (CRTs). Flat - panel display devices include liquid - crystal displays (LCDs), plasma display panels (PDPs), organic light - emitting displays (OLEDs), and electrophoretic displays (EPDs).

[0005] Among display devices, an OLED includes an organic light - emitting diode, which includes a pixel electrode, a counter electrode, and a light - emitting layer disposed between the pixel electrode and the counter electrode. When a voltage is applied to the counter electrode and the pixel electrode of the organic light - emitting diode, visible light is emitted from the light - emitting layer.

[0006] An organic light - emitting display device may include organic light - emitting diodes that emit red, green, and blue visible light to implement a color screen, and the light - emitting layer of each of the organic light - emitting diodes may be formed using an ink - jet printing method or the like.

[0007] A display device includes a display area for displaying an image and a non - display area other than the display area where an image is not displayed through it. Recently, active research is being conducted to increase the display area by reducing the area of the non - display area, in which signal lines of the display device and the like are arranged. Summary of the invention

[0008] One or more embodiments include a display device and a method of manufacturing the display device, in which a light - emitting layer disposed on each of the organic light - emitting diodes can be easily formed.

[0009] In addition, one or more embodiments include a display device having a reduced area of the non - display area and a method of manufacturing the display device.

[0010] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0011] According to one or more embodiments, a display device includes: a substrate including a display area and a non-display area; a plurality of display elements disposed in the display area and including a pixel electrode, a common layer, a light-emitting layer, and a counter electrode; and a pixel defining layer having an opening exposing a central portion of the pixel electrode, wherein the common layer includes a first region disposed between a first light-emitting layer and a second light-emitting layer, the first light-emitting layer is disposed in a first display element among the plurality of display elements, the second light-emitting layer is disposed in a second display element adjacent to the first display element among the plurality of display elements, and wherein the first region has protrusions spaced apart from each other.

[0012] In an embodiment, an upper surface of the light-emitting layer may be parallel to an upper surface of the substrate.

[0013] In an embodiment, the light-emitting layer may be disposed between the counter electrode and the common layer and may extend from a central portion of the pixel electrode to at least a part of an inner surface of the opening.

[0014] In an embodiment, an upper surface of the light-emitting layer may be convex.

[0015] In an embodiment, a width of a second region of the common layer in which the light-emitting layer is disposed may be smaller than a width of the opening exposed by the pixel defining layer.

[0016] In an embodiment, the first region may extend to an inner surface of the opening.

[0017] In an embodiment, the light-emitting layer may be disposed between the common layer and the counter electrode in the opening.

[0018] In an embodiment, in the first region, the common layer may include a lower region connected to each of the protrusions.

[0019] In an embodiment, at least one of the protrusions may have a rectangular cross-sectional shape.

[0020] In an embodiment, a width of at least one of the protrusions at a first point may be smaller than a width of at least one of the protrusions at a second point, wherein the second point is closer to the lower region than the first point in a thickness direction.

[0021] In an embodiment, a spacing between the protrusions spaced apart from each other may be about 1 μm or greater and may be about 30 μm or smaller.

[0022] In an embodiment, the display device includes a second region in which the light-emitting layer overlaps with the common layer, wherein at least one of the first region and the second region is a hydrophobic region and the other may be a hydrophilic region.

[0023] According to one or more embodiments, a display device includes: a substrate including a display area for displaying an image and a non-display area surrounding the display area; a pixel circuit layer including thin film transistors; a display element including a pixel electrode, a light emitting layer, and a counter electrode located in the display area and connected to the thin film transistors; and a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer disposed on the display element, wherein the first inorganic encapsulation layer includes a boundary portion located in the non-display area, the boundary portion includes protrusions spaced apart from each other, the boundary portion surrounds the display area, and the organic encapsulation layer is disposed so as not to overlap with the boundary portion.

[0024] In an embodiment, the second inorganic encapsulation layer may contact the first inorganic encapsulation layer at the boundary portion.

[0025] In an embodiment, the first inorganic encapsulation layer may include a lower region connected to the protrusions at the boundary portion.

[0026] In an embodiment, the protrusions in the first inorganic encapsulation layer may have a rectangular cross-sectional shape at the boundary portion.

[0027] In an embodiment, the width of at least one of the protrusions at a first point may be smaller than the width of at least one of the protrusions at a second point, wherein the second point is closer to the lower region than the first point in the thickness direction.

[0028] In an embodiment, the first inorganic encapsulation layer includes an inner portion disposed inside the inner boundary of the boundary portion, and at least one of the boundary portion and the inner portion may be a hydrophilic region and the other may be a hydrophobic region.

[0029] According to one or more embodiments, a method of manufacturing a display device includes: preparing a substrate including a display area and a non-display area, forming a display element in the display area, forming a first inorganic encapsulation layer on the display element; forming a boundary portion including protrusions spaced apart from each other on the first inorganic encapsulation layer disposed in the non-display area, forming an organic encapsulation layer on the first inorganic encapsulation layer inside the inner boundary of the boundary portion, and forming a second inorganic encapsulation layer on the organic encapsulation layer and the boundary portion.

[0030] In an embodiment, the second inorganic encapsulation layer may contact the first inorganic encapsulation layer at the boundary portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other aspects, features, and advantageous effects of specific embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0032] Figure 1 is a plan view of a display device according to an embodiment;

[0033] Figure 2A and Figure 2B is an equivalent circuit diagram of a pixel in a display device according to an embodiment;

[0034] Figure 2C is a plan view of a pixel circuit according to an embodiment;

[0035] Figure 3 is a cross-sectional view of a display device according to an embodiment;

[0036] Figure 4A is a cross-sectional view of a part of a first pixel and a part of a second pixel adjacent to the first pixel in a display device according to an embodiment;

[0037] Figure 4B is an enlarged view of part A corresponding to a first region of a display device of a first functional layer according to an embodiment;

[0038] Figure 4C is an enlarged view of part A corresponding to a first region of a display device of a first functional layer according to another embodiment;

[0039] Figure 5A 、 Figure 5B and Figure 5C is a cross-sectional view for explaining a method of manufacturing a display device according to an embodiment;

[0040] Figure 6 is a cross-sectional view of a part of a first pixel and a part of a second pixel adjacent to the first pixel in a display device according to another embodiment;

[0041] Figure 7 is a plan view of a display device according to another embodiment;

[0042] Figure 8 is a cross-sectional view of a display device according to another embodiment;

[0043] Figure 9 is a cross-sectional view of a part of a first pixel in a display device according to another embodiment; and

[0044] Figure 10A 、 Figure 10B 、 Figure 10C and Figure 10D is a cross-sectional view for explaining a method of manufacturing a display device according to another embodiment. Detailed Embodiments

[0045] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, these embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described only by way of reference to the accompanying drawings to illustrate aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the present disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variants thereof.

[0046] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same reference numerals are used to denote the same elements, and repeated descriptions thereof will be omitted.

[0047] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms.

[0048] The expressions used in the singular include the plural expressions unless the context clearly dictates otherwise.

[0049] It will also be understood that the terms "comprises" and / or "comprising", as used herein, denote the presence of the stated features or elements, but do not preclude the presence or addition of one or more other features or elements.

[0050] It will be understood that when a layer, region, or element is referred to as being "formed on" another layer, region, or element, the layer, region, or element may be formed directly or indirectly on the other layer, region, or element. That is, for example, there may be intervening layers, regions, or elements.

[0051] For ease of illustration, the dimensions of the elements in the drawings may be exaggerated. In other words, since the dimensions and thicknesses of the components in the drawings are arbitrarily shown for ease of illustration, the following embodiments are not limited thereto.

[0052] When a particular embodiment can be implemented differently, the specific process order may be performed differently from the described order. For example, two consecutively described processes may be performed substantially simultaneously, or, in the reverse order from the described order.

[0053] It will be understood that when a layer, region, or component is connected to another part, the layer, region, or component may be directly connected to the part, or there may be intervening layers, regions, or components. For example, when a layer, region, or component is electrically connected to another part, the layer, region, or component may be directly electrically connected to the part, or may be indirectly connected to the part through another layer, region, or component.

[0054] Figure 1 is a plan view of a display device according to an embodiment.

[0055] Referring to Figure 1 , the display device 1 has a display area DA for displaying a specific image and a non-display area NDA surrounding the display area DA.

[0056] The display device 1 is a device for displaying an image and may be a portable mobile device such as a mobile phone, a game machine, a multimedia device, or a micro PC.

[0057] A plurality of pixels P may be provided in the display area DA. The plurality of pixels P provided in the display area DA may emit red light, green light, or blue light, and the display area DA may provide a specific image by using the light emitted from the pixels P.

[0058] The pixel P may be electrically connected to a scan line SL extending in a first direction (e.g., the x direction) and a data line DL extending in a second direction (e.g., the y direction).

[0059] Figure 2A and Figure 2B is an equivalent circuit diagram of one of the pixels P in the display device 1 according to an embodiment.

[0060] Referring to Figure 2A , the pixel P may include a pixel circuit PC and an organic light-emitting diode OLED connected to the pixel circuit PC as a display element.

[0061] The pixel circuit PC may include a driving thin-film transistor T1, a switching thin-film transistor T2, and a storage capacitor Cst. Each pixel P may emit, for example, red light, green light, or blue light from the organic light-emitting diode OLED. Alternatively, each pixel P may emit, for example, red light, green light, blue light, or white light from the organic light-emitting diode OLED.

[0062] The switching thin-film transistor T2 is connected to the scan line SL and the data line DL and may send a data voltage input from the data line DL to the driving thin-film transistor T1 in response to a switching voltage input from the scan line SL. The storage capacitor Cst is connected between the switching thin-film transistor T2 and the driving voltage line PL and may store a voltage corresponding to the difference between the voltage received from the switching thin-film transistor T2 and a first power supply voltage ELVDD supplied to the driving voltage line PL.

[0063] The driving thin film transistor T1 is connected between the driving voltage line PL and the organic light emitting diode OLED. Among them, the driving voltage line PL is connected to a node of the storage capacitor Cst. The driving thin film transistor T1 can control the driving current flowing through the organic light emitting diode OLED. The driving current flowing through the organic light emitting diode OLED can correspond to the voltage stored in the storage capacitor Cst. The organic light emitting diode OLED can emit light with a specific brightness according to the driving current. A second power supply voltage ELVSS can be supplied to the opposite electrode (e.g., the cathode) of the organic light emitting diode OLED.

[0064] Although Figure 2A The pixel circuit PC is shown to include two thin film transistors and a storage capacitor, but in some embodiments, the number of thin film transistors and the number of storage capacitors can vary according to the design of the pixel circuit PC. For example, the pixel circuit PC may further include one or more thin film transistors in addition to the above two thin film transistors.

[0065] Referring to Figure 2B , the pixel circuit PC may include a plurality of thin film transistors and a storage capacitor Cst. The thin film transistors and the storage capacitor Cst may be connected to the signal lines SL, SIL, EL, and DL, the initialization voltage line VL, and the driving voltage line PL.

[0066] In Figure 2B , each pixel P is connected to the signal lines SL, SIL, EL, and DL, the initialization voltage line VL, and the driving voltage line PL. However, in another embodiment, at least one of the signal lines SL, SIL, EL, and DL, the initialization voltage line VL, the driving voltage line PL, etc. may be shared by adjacent pixels.

[0067] The plurality of thin film transistors may include a driving thin film transistor T1, a switching thin film transistor T2, a compensating thin film transistor T3, a first initialization thin film transistor T4, an operation control thin film transistor T5, an emission control thin film transistor T6, and a second initialization thin film transistor T7.

[0068] The signal lines SL, SIL, EL, and DL include a scan line SL for sending a scan signal Sn, a previous scan line SIL for sending a previous scan signal Sn - 1 to the first initialization thin film transistor T4 and the second initialization thin film transistor T7, an emission control line EL for sending an emission control signal En to the operation control thin film transistor T5 and the emission control thin film transistor T6, and a data line DL intersecting the scan line SL for sending a data signal Dm. The driving voltage line PL sends a first power supply voltage ELVDD to the driving thin film transistor T1, and the initialization voltage line VL sends an initialization voltage Vint for initializing the driving thin film transistor T1 and the pixel electrode.

[0069] The driving gate electrode G1 of the driving thin-film transistor T1 is connected to the lower electrode Cst1 of the storage capacitor Cst. The driving source electrode S1 of the driving thin-film transistor T1 is connected to the driving voltage line PL via the operation control thin-film transistor T5, and the driving drain electrode D1 of the driving thin-film transistor T1 is electrically connected to the pixel electrode of the organic light-emitting diode OLED via the emission control thin-film transistor T6. The driving thin-film transistor T1 receives the data signal Dm according to the switching operation of the switching thin-film transistor T2 and supplies the driving current I to the organic light-emitting diode OLED. OLED 。

[0070] The switching gate electrode G2 of the switching thin-film transistor T2 is connected to the scan line SL. The switching source electrode S2 of the switching thin-film transistor T2 is connected to the data line DL, and the switching drain electrode D2 of the switching thin-film transistor T2 is connected to the driving source electrode S1 of the driving thin-film transistor T1 and is connected to the driving voltage line PL via the operation control thin-film transistor T5. The switching thin-film transistor T2 is turned on in response to the scan signal Sn received through the scan line SL and performs a switching operation for transmitting the data signal Dm supplied from the data line DL to the driving source electrode S1 of the driving thin-film transistor T1.

[0071] The compensation gate electrode G3 of the compensation thin-film transistor T3 is connected to the scan line SL. The compensation source electrode S3 of the compensation thin-film transistor T3 is connected to the driving drain electrode D1 of the driving thin-film transistor T1 and is connected to the pixel electrode of the organic light-emitting diode OLED via the emission control thin-film transistor T6, and the compensation drain electrode D3 of the compensation thin-film transistor T3 is connected to the lower electrode Cst1 of the storage capacitor Cst, the first initialization drain electrode D4 of the first initialization thin-film transistor T4, and the driving gate electrode G1 of the driving thin-film transistor T1. The compensation thin-film transistor T3 is turned on in response to the scan signal Sn received through the scan line SL and electrically connects the driving gate electrode G1 of the driving thin-film transistor T1 to the driving drain electrode D1, thereby diode-connecting the driving thin-film transistor T1.

[0072] The first initialization gate electrode G4 of the first initialization thin film transistor T4 is connected to the previous scan line SIL. The first initialization source electrode S4 of the first initialization thin film transistor T4 is connected to the second initialization drain electrode D7 of the second initialization thin film transistor T7 and the initialization voltage line VL. And the first initialization drain electrode D4 of the first initialization thin film transistor T4 is connected to the lower electrode Cst1 of the storage capacitor Cst, the compensation drain electrode D3 of the compensation thin film transistor T3, and the drive gate electrode G1 of the drive thin film transistor T1. The first initialization thin film transistor T4 is turned on in response to the previous scan signal Sn-1 received through the previous scan line SIL, and initializes the voltage of the drive gate electrode G1 of the drive thin film transistor T1 by sending the initialization voltage Vint to the drive gate electrode G1 of the drive thin film transistor T1.

[0073] The operation control gate electrode G5 of the operation control thin film transistor T5 is connected to the emission control line EL. The operation control source electrode S5 of the operation control thin film transistor T5 is connected to the drive voltage line PL. And the operation control drain electrode D5 of the operation control thin film transistor T5 is connected to the drive source electrode S1 of the drive thin film transistor T1 and the switch drain electrode D2 of the switch thin film transistor T2.

[0074] The emission control gate electrode G6 of the emission control thin film transistor T6 is connected to the emission control line EL. The emission control source electrode S6 of the emission control thin film transistor T6 is connected to the drive drain electrode D1 of the drive thin film transistor T1 and the compensation source electrode S3 of the compensation thin film transistor T3. And the emission control drain electrode D6 of the emission control thin film transistor T6 is electrically connected to the second initialization source electrode S7 of the second initialization thin film transistor T7 and the pixel electrode of the organic light emitting diode OLED.

[0075] The operation control thin film transistor T5 and the emission control thin film transistor T6 are turned on simultaneously in response to the emission control signal En received through the emission control line EL, thereby sending the first power supply voltage ELVDD to the organic light emitting diode OLED and causing the drive current I OLED to flow through the organic light emitting diode OLED.

[0076] The second initialization gate electrode G7 of the second initialization thin film transistor T7 is connected to the previous scan line SIL. The second initialization source electrode S7 of the second initialization thin film transistor T7 is connected to the emission control drain electrode D6 of the emission control thin film transistor T6 and the pixel electrode of the organic light emitting diode OLED. And the second initialization drain electrode D7 of the second initialization thin film transistor T7 is connected to the first initialization source electrode S4 of the first initialization thin film transistor T4 and the initialization voltage line VL. The second initialization thin film transistor T7 is turned on in response to the previous scan signal Sn-1 received through the previous scan line SIL, thereby initializing the pixel electrode of the organic light emitting diode OLED.

[0077] Although Figure 2B The case where the first initialization thin film transistor T4 and the second initialization thin film transistor T7 are connected to the previous scan line SIL is shown, but in another embodiment, the first initialization thin film transistor T4 can be connected to the previous scan line SIL and driven according to the previous scan signal Sn-1, while the second initialization thin film transistor T7 can be connected to a separate signal line (e.g., the next scan line) and driven according to the signal sent to this signal line.

[0078] The upper electrode Cst2 of the storage capacitor Cst is connected to the driving voltage line PL, and the opposite electrode of the organic light emitting diode OLED is connected to the second power supply voltage ELVSS. Therefore, the driving current I of the organic light emitting diode OLED OLED can flow through the driving thin film transistor T1, and thus the organic light emitting diode OLED can emit light to display an image.

[0079] Figure 2B It is shown that the compensation thin film transistor T3 and the first initialization thin film transistor T4 have dual gate electrodes. However, the compensation thin film transistor T3 and the first initialization thin film transistor T4 can have one gate electrode.

[0080] Figure 2C is a plan view of the pixel circuit PC according to an embodiment.

[0081] Referring to Figure 2C FIG., the driving thin film transistor T1, the switching thin film transistor T2, the compensation thin film transistor T3, the first initialization thin film transistor T4, the operation control thin film transistor T5, the emission control thin film transistor T6, and the second initialization thin film transistor T7 are arranged along the semiconductor layer 1130. The semiconductor layer 1130 is provided on a substrate, and a buffer layer including an inorganic insulating material is formed on the substrate.

[0082] Some regions of the semiconductor layer 1130 may correspond to the semiconductor layers of the driving thin film transistor T1, the switching thin film transistor T2, the compensating thin film transistor T3, the first initialization thin film transistor T4, the operation control thin film transistor T5, the emission control thin film transistor T6, and the second initialization thin film transistor T7. In other words, it can be understood that the semiconductor layers of the driving thin film transistor T1, the switching thin film transistor T2, the compensating thin film transistor T3, the first initialization thin film transistor T4, the operation control thin film transistor T5, the emission control thin film transistor T6, and the second initialization thin film transistor T7 are connected to each other and bent into various shapes.

[0083] The semiconductor layer 1130 includes a channel region and source and drain regions located on both sides of the channel region, where the source and drain regions are the regions of the semiconductor layer 1130 connected to the source and drain electrodes of the corresponding thin film transistors. Hereinafter, for convenience, the source and drain regions are respectively referred to as the source electrode and the drain electrode.

[0084] The driving thin film transistor T1 includes a driving gate electrode G1 overlapping with the driving channel region, and a driving source electrode S1 and a driving drain electrode D1 provided on both sides of the driving channel region. The driving channel region overlapping with the driving gate electrode G1 has a bent shape such as an Ω shape, so that a long channel length can be formed in a narrow space. When the driving channel region is long, the driving range of the gate voltage becomes wider, so that the gradation of the light emitted from the organic light emitting diode OLED can be more precisely controlled, and the display quality can be improved.

[0085] The switching thin film transistor T2 includes a switching gate electrode G2 overlapping with the switching channel region, and a switching source electrode S2 and a switching drain electrode D2 provided on both sides of the switching channel region. The switching drain electrode D2 may be connected to the driving source electrode S1.

[0086] The compensating thin film transistor T3 may be a dual thin film transistor having a compensating gate electrode G3 overlapping with two compensating channel regions, and may include a compensating source electrode S3 and a compensating drain electrode D3 provided on both sides of the compensating gate electrode G3. The compensating thin film transistor T3 may be connected to the driving gate electrode G1 of the driving thin film transistor T1 through a node connection line 1174 described later.

[0087] The first initialization thin film transistor T4 may be a dual thin film transistor having a first initialization gate electrode G4 overlapping with two first initialization channel regions, and may include a first initialization source electrode S4 and a first initialization drain electrode D4 provided on both sides of the first initialization gate electrode G4.

[0088] The operation control thin film transistor T5 may include an operation control gate electrode G5 overlapping with an operation control channel region, and may include an operation control source electrode S5 and an operation control drain electrode D5 disposed on both sides of the operation control gate electrode G5. The operation control drain electrode D5 may be connected to the driving source electrode S1.

[0089] The emission control thin film transistor T6 may include an emission control gate electrode G6 overlapping with an emission control channel region, and may include an emission control source electrode S6 and an emission control drain electrode D6 disposed on both sides of the emission control gate electrode G6. The emission control source electrode S6 may be connected to the driving drain electrode D1.

[0090] The second initialization thin film transistor T7 may include a second initialization gate electrode G7 overlapping with a second initialization channel region, and a second initialization source electrode S7 and a second initialization drain electrode D7 disposed on both sides of the second initialization gate electrode G7.

[0091] The above thin film transistors may be connected to signal lines SL, SIL, EL, and DL, an initialization voltage line VL, and a driving voltage line PL.

[0092] The scan line SL, the previous scan line SIL, the emission control line EL, and the driving gate electrode G1 may be disposed on the above semiconductor layer 1130, and an (a plurality of) insulating layer is provided between the scan line SL, the previous scan line SIL, the emission control line EL, the driving gate electrode G1, and the semiconductor layer 1130.

[0093] The scan line SL may extend in a first direction (e.g., the x direction). Some regions of the scan line SL may correspond to the switch gate electrode G2 and the compensation gate electrode G3. For example, some regions of the scan line SL overlapping with the channel regions of the switch thin film transistor T2 and the compensation thin film transistor T3 may be the switch gate electrode G2 and the compensation gate electrode G3, respectively.

[0094] The previous scan line SIL may extend in the first direction, and some regions of the previous scan line SIL may respectively correspond to the first initialization gate electrode G4 and the second initialization gate electrode G7. For example, some regions of the previous scan line SIL overlapping with the channel regions of the first initialization thin film transistor T4 and the second initialization thin film transistor T7 may be the first initialization gate electrode G4 and the second initialization gate electrode G7, respectively.

[0095] The emission control line EL extends in the first direction. Some regions of the emission control line EL may respectively correspond to the operation control gate electrode G5 and the emission control gate electrode G6. For example, some regions of the emission control line EL overlapping with the channel regions of the operation control thin film transistor T5 and the emission control thin film transistor T6 may be the operation control gate electrode G5 and the emission control gate electrode G6, respectively.

[0096] The driving gate electrode G1 can be connected to the compensation thin film transistor T3 through the above-mentioned node connection line 1174.

[0097] The electrode voltage line HL can be disposed on the scan line SL, the previous scan line SIL, the emission control line EL, and the driving gate electrode G1, and (a plurality of) insulating layers are provided between the electrode voltage line HL and the scan line SL, the previous scan line SIL, the emission control line EL, and the driving gate electrode G1.

[0098] The electrode voltage line HL can extend in a first direction to intersect with the data line DL and the driving voltage line PL. A part of the electrode voltage line HL covers at least a part of the driving gate electrode G1, and can form a storage capacitor Cst together with the driving gate electrode G1. For example, the driving gate electrode G1 can be the lower electrode Cst1 of the storage capacitor Cst, and a part of the electrode voltage line HL can be the upper electrode Cst2 of the storage capacitor Cst.

[0099] The upper electrode Cst2 of the storage capacitor Cst is electrically connected to the driving voltage line PL. In this regard, the electrode voltage line HL can be connected to the driving voltage line PL provided on the electrode voltage line HL through the contact hole CNT. Therefore, the electrode voltage line HL can have the same voltage level (constant voltage) as the voltage level of the driving voltage line PL. For example, the electrode voltage line HL can have a constant voltage of +5V. The electrode voltage line HL can be understood as a horizontal driving voltage line.

[0100] Since the driving voltage line PL extends in a second direction, and the electrode voltage line HL electrically connected to the driving voltage line PL extends in a first direction intersecting with the second direction (for example, the y direction), a plurality of driving voltage lines PL and electrode voltage lines HL can form a grid structure in the display area DA.

[0101] In the present embodiment, the electrode voltage line HL can be disposed on a layer different from the layer of the driving voltage line PL, and the resistivity of the electrode voltage line HL can be greater than the resistivity of the driving voltage line PL.

[0102] The data line DL, the driving voltage line PL, the initialization connection line 1173, and the node connection line 1174 can be disposed on the electrode voltage line HL, and (a plurality of) insulating layers are provided between the data line DL, the driving voltage line PL, the initialization connection line 1173, and the node connection line 1174 and the electrode voltage line HL.

[0103] The data line DL extends in a second direction, and can be connected to the switching source electrode S2 of the switching thin film transistor T2 through the contact hole 1154. A part of the data line DL can be understood as the switching source electrode.

[0104] The driving voltage line PL extends in the second direction and is connected to the electrode voltage line HL through the contact hole CNT as described above. In addition, the driving voltage line PL can be connected to the operation control thin film transistor T5 through the contact hole 1155. The driving voltage line PL can be connected to the operation control source electrode S5 through the contact hole 1155.

[0105] One end of the initialization connection line 1173 can be connected to the first initialization thin film transistor T4 and the second initialization thin film transistor T7 through the contact hole 1152, and the other end can be connected to the initialization voltage line VL to be described later through the contact hole 1151.

[0106] One end of the node connection line 1174 can be connected to the compensation drain electrode D3 through the contact hole 1156, and the other end can be connected to the driving gate electrode G1 through the contact hole 1157.

[0107] The initialization voltage line VL can be disposed on the data line DL, the driving voltage line PL, the initialization connection line 1173, and the node connection line 1174, and (a plurality of) insulating layers are provided between the initialization voltage line VL and the data line DL, the driving voltage line PL, the initialization connection line 1173, and the node connection line 1174.

[0108] The initialization voltage line VL extends in the first direction. The initialization voltage line VL can be connected to the first initialization thin film transistor T4 and the second initialization thin film transistor T7 through the initialization connection line 1173. The initialization voltage line VL can have a constant voltage (for example, -2V, etc.).

[0109] The initialization voltage line VL and the upper electrode Cst2 (i.e., the electrode voltage line HL) are disposed on the same layer, and the initialization voltage line VL can include the same material as the electrode voltage line HL. In the display area DA, the pixel electrode of the organic light emitting diode OLED can be connected to the emission control thin film transistor T6. The pixel electrode 210 can be connected to the connection metal 1175 through the contact hole 1163, and the connection metal 1175 can be connected to the emission control drain electrode D6 through the contact hole 1153.

[0110] Figure 3 is a cross-sectional view of the display device 1 according to an embodiment.

[0111] Refer to Figure 3 , along the third direction (for example, the z direction, also referred to as the thickness direction) perpendicular to the first direction (for example, the x direction), a pixel circuit layer PCL including a pixel circuit and an insulating layer can be provided on the substrate 101 of the display device 1, and a display element layer DEL including a plurality of display elements can be provided on the pixel circuit layer PCL.

[0112] The substrate 101 may include glass or a polymer resin (such as polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate (PC), triacetyl cellulose (TAC), cellulose acetate propionate, etc.).

[0113] A barrier layer (not shown) may also be included between the pixel circuit layer PCL and the substrate 101. The barrier layer prevents the penetration of external foreign substances and may include a single layer or multiple layers, and the single layer or multiple layers include inorganic materials such as silicon nitride (SiN x , x>0) and silicon oxide (SiO x , x>0).

[0114] The display element layer DEL may include display elements, for example, the above-mentioned organic light-emitting diode OLED. The pixel circuit layer PCL may include pixel circuits and an insulating layer connected to each of the organic light-emitting diodes OLED. The pixel circuit layer PCL may include a plurality of transistors and storage capacitors, and an insulating layer disposed between the plurality of transistors and the storage capacitors.

[0115] The display element may be covered by a packaging member such as a thin film encapsulation layer TFE. The thin film encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer covering the display element layer DEL. The inorganic encapsulation layer may include at least one inorganic material among alumina, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer may include a polymer-based material. Examples of the polymer-based material may include acrylic resin, epoxy resin, polyimide, and / or polyethylene. In an embodiment, the organic encapsulation layer may include acrylate.

[0116] In another embodiment, the thin film encapsulation layer TFE may have a structure in which the internal space between the substrate 101 and the upper substrate (which is a transparent member) is sealed by bonding the substrate 101 and the upper substrate with a sealing member. At this time, an absorbent or a filler may be positioned in the internal space. The sealing member may be a sealant, and in another embodiment, the sealing member may include a material cured by a laser beam. For example, the sealing member may be a frit. More specifically, the sealing member may include polyurethane resin, epoxy resin, and acrylic resin (which are organic sealants), or may include silicone resin (which is an inorganic sealant). As the polyurethane resin, for example, polyurethane acrylate, etc. may be used. As the acrylic resin, for example, butyl acrylate, 2-ethylhexyl acrylate, etc. may be used. Meanwhile, the sealing member may include a material cured by heating.

[0117] On the thin film encapsulation layer TFE, a touch electrode layer TSL including touch electrodes may be provided, and an optical function layer OFL may be provided on the touch electrode layer TSL. The touch electrode layer TSL may obtain coordinate information according to an external input (e.g., a touch event). The optical function layer OFL may reduce the reflectance of light (external light) incident on the display device 1 from the outside, and / or may improve the color purity of the light emitted from the display device 1. In an embodiment, the optical function layer OFL may include a retarder and a polarizer. The retarder may be of a film type or a liquid crystal coating type, and may include a λ / 2 retarder and / or a λ / 4 retarder. The polarizer may also be of a film type or a liquid crystal coating type. The film type may include a stretched synthetic resin film, and the liquid crystal coating type may include liquid crystals arranged in a specific arrangement. The retarder and the polarizer may further include a protective film.

[0118] In another embodiment, the optical function layer OFL may include a black matrix and a color filter. The color filters may be arranged in view of the color of the light emitted from each of the pixels of the display device 1. Each of the color filters may include a red, green, or blue pigment or dye. Alternatively, in addition to the above pigments or dyes, each of the color filters may further include quantum dots. Alternatively, some of the color filters may not include the above pigments or dyes, and may include scattering particles such as titanium oxide.

[0119] In another embodiment, the optical function layer OFL may include a destructive interference structure. The destructive interference structure may include a first reflective layer and a second reflective layer provided on corresponding layers. The first reflected light and the second reflected light reflected by the first reflective layer and the second reflective layer, respectively, may destructively interfere, and thereby the external light reflectance may be reduced.

[0120] An adhesive member may be provided between the touch electrode layer TSL and the optical function layer OFL. The adhesive member may be, but is not limited to, a common member known in the art. The adhesive member may be a pressure-sensitive adhesive (PSA).

[0121] Figure 4A It is a cross-sectional view of a part of a first pixel P1 and a part of a second pixel P2 adjacent to the first pixel P1 of a display device according to an embodiment. Figure 4B It is an enlarged view of a part A corresponding to a first region R1 of a display device of a first functional layer 123 according to an embodiment. Figure 4C It is an enlarged view of a part A corresponding to a first region R1 of a first functional layer 123 according to another embodiment.

[0122] A pixel circuit layer PCL is provided on a substrate 101. Figure 4AAs shown, a pixel circuit layer PCL disposed below and / or above a thin film transistor and components of the thin film transistor includes a buffer layer 111, a first gate insulating layer 113a, a second gate insulating layer 113b, an interlayer insulating layer 115, and a planarizing insulating layer 117. The thin film transistor may include a first thin film transistor TFT1 and a second thin film transistor TFT2.

[0123] Hereinafter, since the configuration of the second thin film transistor TFT2 is similar to that of the first thin film transistor TFT1, the first thin film transistor TFT1 will be mainly described, and the detailed description of the second thin film transistor TFT2 will be omitted.

[0124] The buffer layer 111 may include an inorganic insulator such as silicon nitride, silicon oxynitride, and silicon oxide, and may include a single layer or multiple layers including the above inorganic insulating materials.

[0125] The first thin film transistor TFT1 may include a semiconductor layer 112, and the semiconductor layer 112 may include polysilicon. Alternatively, the semiconductor layer 112 may include amorphous silicon, an oxide semiconductor, an organic semiconductor, etc. The semiconductor layer 112 may include a channel region 112c and a drain region 112a and a source region 112b respectively disposed on both sides of the channel region 112c. The gate electrode 114 may overlap with the channel region 112c.

[0126] The gate electrode 114 may include a low-resistance metal material. The gate electrode 114 may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a single layer or multiple layers including the above materials.

[0127] The first gate insulating layer 113a may be disposed between the semiconductor layer 112 and the gate electrode 114. The first gate insulating layer 113a may include an inorganic insulating material such as silicon dioxide (SiO2), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO2).

[0128] The second gate insulating layer 113b may be provided to cover the gate electrode 114. Similar to the first gate insulating layer 113a, the second gate insulating layer 113b may include an inorganic insulating material such as SiO2, SiN x , SiON, Al2O3, TiO2, Ta2O5, HfO2, or ZnO2.

[0129] The upper electrode Cst2 of the storage capacitor Cst may be disposed on the second gate insulating layer 113b. The upper electrode Cst2 may overlap with the gate electrode 114 disposed thereunder. In this case, the gate electrode 114 and the upper electrode Cst2 overlapping with each other and the second gate insulating layer 113b disposed therebetween may form the storage capacitor Cst. That is, the gate electrode 114 may be used as the lower electrode Cst1 of the storage capacitor Cst.

[0130] Accordingly, the storage capacitor Cst and the first thin film transistor TFT1 may overlap with each other. In some embodiments, the storage capacitor Cst may not overlap with the first thin film transistor TFT1.

[0131] The upper electrode Cst2 may include Al, platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), neodymium (Nd), iridium (Ir), chromium (Cr), nickel (Ni), calcium (Ca), molybdenum (Mo), Ti, tungsten (W), and / or Cu, and may be formed as a single layer or multiple layers including the above materials.

[0132] The interlayer insulating layer 115 may cover the upper electrode Cst2. The interlayer insulating layer 115 may include SiO2, SiN x , SiON, Al2O3, TiO2, Ta2O5, HfO2, or ZnO2. The interlayer insulating layer 115 may include a single layer or multiple layers including the above inorganic insulating materials.

[0133] The drain electrode 116a and the source electrode 116b may be respectively disposed on the interlayer insulating layer 115. The drain electrode 116a and the source electrode 116b may include materials with good conductivity. The drain electrode 116a and the source electrode 116b may include a conductive material including Mo, Al, Cu, Ti, etc., and may be formed as a single layer or multiple layers including the above materials. In an embodiment, the drain electrode 116a and the source electrode 116b may have a multi-layer structure of Ti / Al / Ti.

[0134] The planarization insulating layer 117 may include an organic insulating layer. The planarization insulating layer 117 may include an organic insulating material such as common commercial polymers, such as polymethyl methacrylate (PMMA) or polystyrene (PS), polymer derivatives including phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorine-based polymers, parylene-based polymers, vinyl alcohol polymers, and / or mixtures thereof.

[0135] The display element layer DEL is disposed on the pixel circuit layer PCL having the above structure. The display element layer DEL includes a first organic light-emitting diode OLED1 and a second organic light-emitting diode OLED2, and the pixel electrode 121 of the first organic light-emitting diode OLED1 can be electrically connected to the first thin-film transistor TFT1 through a contact hole formed by passing through the planarization insulating layer 117. In addition, the pixel electrode 121 of the second organic light-emitting diode OLED2 can be electrically connected to the second thin-film transistor TFT2 through a contact hole formed by passing through the planarization insulating layer 117.

[0136] Hereinafter, since the second organic light-emitting diode OLED2 is similar to the first organic light-emitting diode OLED1, the first organic light-emitting diode OLED1 will be mainly described, and the detailed description of the second organic light-emitting diode OLED2 will be omitted.

[0137] The pixel electrode 121 may include a conductive oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). In another embodiment, the pixel electrode 121 may include a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof. In another embodiment, the pixel electrode 121 may further include a film formed of ITO, IZO, ZnO, or In2O3 above / below the above reflective layer.

[0138] A pixel defining layer 119 is disposed on the pixel electrode 121, and the pixel defining layer 119 has an opening 119OP that exposes the central portion of the pixel electrode 121. The pixel defining layer 119 may include an organic insulator and / or an inorganic insulator. The opening 119OP may define a light-emitting region of the light emitted from the first organic light-emitting diode OLED1 (hereinafter, referred to as the first light-emitting region EA1). For example, the width of the opening 119OP may correspond to the width of the first light-emitting region EA1. More specifically, the width of the opening 119OP may be defined as the size of the central portion of the pixel electrode 121 that is exposed.

[0139] The first functional layer 123 may cover the pixel defining layer 119. The first functional layer 123 may include a single layer or multiple layers. The first functional layer 123 may be a hole transport layer (HTL) having a single-layer structure. Alternatively, the first functional layer 123 may include a hole injection layer (HIL) and a hole transport layer (HTL). The first functional layer 123 may be a common layer formed to completely cover the substrate 101.

[0140] The first functional layer 123 may include a first region R1 between the first organic light-emitting diode OLED1 and the second organic light-emitting diode OLED2. In an embodiment, the first region R1 may be disposed on the pixel defining layer 119. In another embodiment, the first region R1 may extend to at least a part of the inner surface of the opening 119OP. For example, the first region R1 may be adjacent to the first light-emitting region EA1. In addition, the first region R1 may be adjacent to a light-emitting region (hereinafter referred to as the second light-emitting region EA2) of the light emitted from the second organic light-emitting diode OLED2. More specifically, the first region R1 may be disposed on the side surface and the upper portion of the pixel defining layer 119, wherein the opening 119OP is defined by the side surface.

[0141] The first functional layer 123 included in the first region R1 may include first protrusions 123a spaced apart from each other. Refer to Figure 4B , the first functional layer 123 may include the first protrusions 123a in the first region R1. In addition, the first functional layer 123 may include first lower regions 123b respectively connected to the first protrusions 123a in the first region R1. The first protrusions 123a and the first lower regions 123b may be formed of the same material, formed as an integral body, and formed simultaneously.

[0142] In an embodiment, the first protrusions 123a may be spaced apart from each other. For example, the first protrusions 123a may be spaced apart from each other by a first interval d1. The first interval d1 may be the distance between the centers of adjacent first protrusions 123a. In another embodiment, the first protrusions 123a may be spaced apart from each other by different intervals. For example, the interval between the first protrusions 123a may be about 1 μm or more and may be about 30 μm or less. More specifically, the first interval d1 may be 10 μm.

[0143] The size of the first protrusions 123a may be set to be about 1 μm or more and may be set to be about 30 μm or less. More specifically, the size of the first protrusions 123a may be about 10 μm. Refer to Figure 4B , the first protrusions 123a are set to the same size, but in another embodiment, the first protrusions 123a may have different sizes.

[0144] In an embodiment, the first protrusions 123a may have a rectangular cross-sectional shape. However, in another embodiment, the first protrusions 123a may be polygons such as triangles, trapezoids, etc. in cross-section. In another embodiment, the first protrusions 123a may include curved portions.

[0145] Refer to Figure 4C, the cross-sectional shape of the first protrusion 123a' may be trapezoidal. More specifically, the width U1 of the first protrusion 123a' at the first point may be smaller than the width U2 of the first protrusion 123a' at the second point, and the second point is set closer to the first lower region 123b' than the first point.

[0146] Referring again to Figure 4A , the first functional layer 123 may include a second region R2, in which a light-emitting layer 125 to be described later will be provided. In an embodiment, the width of the second region R2 may be equal to the width of the first light-emitting region EA1 or the second light-emitting region EA2. However, in another embodiment, the width of the second region R2 may be greater than the width of the first light-emitting region EA1 or the second light-emitting region EA2.

[0147] On the other hand, the first functional layer 123 may include a portion provided in the first region R1 and a portion provided in the second region R2. The portion provided in the second region R2 may be the portion of the first functional layer 123 that is not provided in the first region R1.

[0148] In an embodiment, different from the first region R1, the second region R2 may be a portion that does not include the first protrusion 123a. More specifically, the first protrusion 123a may be provided in the first region R1, while the first protrusion 123a may not be provided in the second region R2. Although not shown in the drawings, in another embodiment, the second region R2 may include a protrusion, while the first region R1 may not include a protrusion. However, for ease of description, the case where the first protrusion 123a is provided in the first region R1 to make the surface of the first functional layer 123 hydrophobic and the first protrusion 123a is not provided in the second region R2 will be described in detail.

[0149] At least one of the first region R1 and the second region R2 may be a hydrophobic region, and the other of the first region R1 and the second region R2 may be a hydrophilic region. For example, the first region R1 may be a hydrophobic region, and the second region R2 may be a hydrophilic region. More specifically, the first region R1 including the first protrusion 123a of the first functional layer 123 may be a hydrophobic region, and the second region R2 may be a hydrophilic region. That is, due to the first protrusion 123a, the contact angle with a liquid (e.g., the light-emitting layer 125) in the first region R1 may be about 150 degrees or greater. Therefore, the first region R1 may exhibit superhydrophobicity and super waterproofness.

[0150] In another embodiment, the first region R1 may be a hydrophilic region, and the second region R2 may be a hydrophobic region. More specifically, the contact angle with another material (e.g., the light-emitting layer 125) in the second region R2 may be about 150 degrees or greater. Thus, the second region R2 may be hydrophobic, and the first region R1 may be hydrophilic.

[0151] The light-emitting layer 125 may be disposed in the opening 119OP of the pixel defining layer 119. More specifically, the light-emitting layer 125 may be disposed in the second region R2 of the first functional layer 123. The light-emitting layer 125 may include a polymeric organic material or a small-molecule organic material that emits light of a specific color.

[0152] In an embodiment, the upper surface of the light-emitting layer 125 may be substantially parallel to the upper surface of the substrate 101. For example, the upper surface of the light-emitting layer 125 may be disposed parallel to the x direction. Thus, the upper surface of the light-emitting layer 125 may be flat.

[0153] In a cross-sectional view, both ends of the light-emitting layer 125 may be disposed adjacent to the first region R1. For example, one side of the light-emitting layer 125 may contact the first region R1 between the first organic light-emitting diode OLED1 and the second organic light-emitting diode OLED2. In other words, the boundary between the first region R1 and the second region R2 may be determined in view of the thickness of the light-emitting layer 125. More specifically, the light-emitting layer 125 may extend from the central portion of the pixel electrode 121 to at least a part of the inner surface of the opening 119OP.

[0154] At least one of the first region R1 and the second region R2 may be a hydrophilic region, and the other may be a hydrophobic region. For example, when the light-emitting layer 125 includes a hydrophilic material, the first region R1 of the first functional layer 123 may be hydrophobic, and the second region R2 of the first functional layer 123 may be hydrophilic. Thus, the light-emitting layer 125 may be mainly disposed in the second region R2. In another example, when the light-emitting layer 125 includes a hydrophobic material, the first region R1 of the first functional layer 123 may be hydrophilic, and the second region R2 of the first functional layer 123 may be hydrophobic. Thus, the light-emitting layer 125 may be mainly disposed in the second region R2.

[0155] The second functional layer 127 may be disposed on the light-emitting layer 125 and the first functional layer 123. The second functional layer 127 may include a single layer or multiple layers. The second functional layer 127 may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The second functional layer 127 may be integrally formed to completely cover the substrate 101.

[0156] The counter electrode 129 may be disposed on the second functional layer 127. The counter electrode 129 may include a conductive material having a low work function. For example, the counter electrode 129 may include a (semi)transparent electrode including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or an alloy thereof. Alternatively, the counter electrode 129 may further include a transparent conductive layer such as ITO, IZO, ZnO, or In2O3 on the (semi)transparent layer including the above materials.

[0157] The arrangement of the first region R1 and the light-emitting layer 125 as described above may flatten the upper surface of the light-emitting layer 125. In addition, the arrangement of the first region R1 and the light-emitting layer 125 may control the shape of the upper surface of the light-emitting layer 125. More specifically, the first functional layer 123 includes a first region R1 and a second region R2, and at least one of the first region R1 and the second region R2 is a hydrophobic region, and the other may be a hydrophilic region. For example, when the light-emitting layer 125 includes a hydrophilic material, the first region R1 may be set as a hydrophobic region, and the second region R2 may be set as a hydrophilic region. Therefore, the light-emitting layer 125 may have a large contact angle with the first region R1 and a small contact angle with the second region R2.

[0158] When each surface of the first region R1 and the second region R2 is hydrophilic or hydrophobic, it may be impossible to control the shape of the upper surface of the light-emitting layer 125 disposed on the first functional layer 123. For example, the surface of the light-emitting layer 125 may have a concave shape due to the adhesion force between the first functional layer 123 and the light-emitting layer 125 disposed in the opening 119OP.

[0159] In the present embodiment, at least one of the first region R1 and the second region R2 of the first functional layer 123 is set as a hydrophilic region, and the other is set as a hydrophobic region. Therefore, the shape of the upper surface of the light-emitting layer 125 disposed in the opening 119OP can be controlled.

[0160] Hereinafter, reference will be made to Figures 5A to 5C A method of manufacturing a display device including the first region R1 and the second region R2 will be described in detail.

[0161] Figures 5A to 5C is a cross-sectional view for explaining a method of manufacturing a display device according to an embodiment. In Figures 5A to 5C , reference numerals identical to those used in Figure 4A and Figure 4B denote the same elements, and repeated descriptions will not be given herein.

[0162] Referring to Figure 5A , first, a substrate 101 is prepared, and a pixel circuit layer PCL is formed on the substrate 101.

[0163] Next, a display element layer DEL may be formed on the pixel circuit layer PCL. That is, a pixel electrode 121 may be formed, and a pixel defining layer 119 having an opening 119OP may be formed, where the opening 119OP exposes a central portion of the pixel electrode 121. In addition, a first functional layer 123 may be formed on the pixel defining layer 119.

[0164] Refer to Figure 5B , in an embodiment, a first protrusion 123a may be formed on a surface of the first functional layer 123 corresponding to the first region R1. More specifically, the first protrusion 123a may be formed on an upper portion of the pixel defining layer 119 overlapping the first region R1 and at least a part of an inner surface of the opening 119OP. In another embodiment, the first region R1 may extend to the inner surface of the opening 119OP to form the first protrusion 123a. In another embodiment, although not shown in the drawings, the first protrusion 123a may be formed only on a surface of the first functional layer 123 corresponding to the second region R2. However, for ease of description, the case where the first protrusion 123a is formed in the first region R1 will be described in detail.

[0165] The first protrusions 123a may be formed to be spaced apart from each other. In an embodiment, the first protrusions 123a may be spaced apart from each other by a first interval d1. In another embodiment, the first protrusions 123a may be spaced apart from each other by different intervals. For example, the interval between the first protrusions 123a may be about 1 μm or more and may be about 30 μm or less. More specifically, the first interval d1 may be 10 μm.

[0166] The size of the first protrusion 123a may be set to be about 1 μm or more and may be set to be about 30 μm or less. More specifically, the size of the first protrusion 123a may be about 10 μm. Refer to Figure 5B , the first protrusions 123a are set to the same size, but in another embodiment, the first protrusions 123a may have different sizes.

[0167] In an embodiment, the first protrusion 123a may have a rectangular cross-sectional shape. However, in another embodiment, the first protrusion 123a may be a polygon such as a triangle or a trapezoid in cross-section. In another embodiment, the first protrusion 123a may include a curved portion.

[0168] In an embodiment, the first functional layer 123 may include a second region R2 in which a light-emitting layer 125 (see Figure 4A ) is formed. In an embodiment, the width of the second region R2 may be equal to the width of a first light-emitting region (not shown) or a second light-emitting region (not shown). In another embodiment, the width of the second region R2 may be greater than the width of the first light-emitting region or the second light-emitting region.

[0169] When forming the first protrusion 123a in the first region R1, a laser beam generated from a laser source 200 can be used. The laser source 200 can be a laser source well-known in the art, such as a UV picosecond laser, a femtosecond super laser, etc. In addition, the laser source 200 can be changed according to the material included in the first functional layer 123.

[0170] Next, referring to Figure 5C , the light-emitting layer 125 can be formed. More specifically, the light-emitting layer 125 can be disposed in the second region R2 of the first functional layer 123. The light-emitting layer 125 can include a polymer or a low-molecular organic material that emits light of a specific color. The light-emitting layer 125 can be formed by using a conventional method such as inkjet printing, spin coating, or heat transfer using a laser beam. Hereinafter, the case of forming the light-emitting layer 125 by using the inkjet printing method will be described in detail.

[0171] In an embodiment, the upper surface of the light-emitting layer 125 can be parallel to the upper surface of the substrate 101. For example, the upper surface of the light-emitting layer 125 can be parallel to the Figure 5C x direction. Therefore, the upper surface of the light-emitting layer 125 can be flat.

[0172] In a cross-sectional view, both ends of the light-emitting layer 125 can be adjacent to the first region R1. For example, one side of the light-emitting layer 125 can be formed to be in contact with the first region R1. More specifically, the light-emitting layer 125 can extend from the central portion of the pixel electrode 121 to at least a part of the inner surface of the opening 119OP.

[0173] As described above, forming the first region R1 and forming the light-emitting layer 125 can make the upper surface of the light-emitting layer 125 flat. In addition, forming the first region R1 and forming the light-emitting layer 125 can control the shape of the upper surface of the light-emitting layer 125. More specifically, at least one of the first region R1 and the second region R2 can be a hydrophobic region, and the other can be a hydrophilic region. For example, when the light-emitting layer 125 includes a hydrophilic material, the first region R1 can be set as a hydrophobic region, and the second region R2 can be set as a hydrophilic region. Therefore, the contact angle between the first region R1 and the light-emitting layer 125 can be larger. When forming the first protrusion 123a of the first region R1, the shape of the upper surface of the light-emitting layer 125 can be adjusted while controlling the width of the first region R1 disposed in the opening 119OP.

[0174] In addition, when manufacturing the light-emitting layer 125 by using the inkjet printing method, precise alignment between the inkjet outlet port (not shown) and the second region R2 may be required. When the inkjet outlet port and the second region R2 are not precisely aligned, the light-emitting layer 125 may be formed in a region other than the opening 119OP. That is, the ink may accumulate on the upper surface of the pixel defining layer 119, thereby forming a defective organic light-emitting diode.

[0175] However, as in the embodiments of the present disclosure, when at least one of the first region R1 and the second region R2 is formed as a hydrophilic region and the other is formed as a hydrophobic region, the light-emitting layer 125 can be formed on the opening 119OP to solve this problem. That is, even when the light-emitting layer 125 is formed in the first region R1 due to the inkjet outlet port and the second region R2 not being precisely aligned with each other, the light-emitting layer 125 can flow into the second region R2 to achieve precise patterning.

[0176] Figure 6 It is a cross-sectional view of a part of the first pixel P1 and a part of the second pixel P2 adjacent to the first pixel P1 in a display device according to another embodiment.

[0177] In Figure 6 and Figure 4A reference numerals that are the same as those used in

[0178] Refer to Figure 6 , the pixel circuit layer PCL and the display element layer DEL can be provided on the substrate 101. The first functional layer 123 included in the first region R1-1 can include first protrusions spaced apart from each other.

[0179] Meanwhile, the first region R1-1 can extend to the inner surface of the opening 119OP. Therefore, the first region R1-1 can be entirely provided on the upper surface of the pixel defining layer 119 between the first organic light-emitting diode OLED1 and the second organic light-emitting diode OLED2 and on the inner surface of the opening 119OP.

[0180] The width of the second region R2-1 can be smaller than the width of the opening 119OP. More specifically, the second region R2-1 can be the part of the first functional layer 123 other than the first region R1-1. If the first region R1-1 extends to the inner surface of the opening 119OP, the width of the second region R2-1 can be reduced. Therefore, the width of the second region R2-1 can be smaller than the width of the opening 119OP.

[0181] The light-emitting layer 125 can be provided in the opening 119OP. Meanwhile, the light-emitting layer 125 can be provided in the second region R2-1. Since the width of the second region R2-1 can be smaller than the width of the opening 119OP, the light-emitting layer 125 can be provided in the opening 119OP.

[0182] The surface of the light-emitting layer 125 may be convex. Since at least one of the first region R1-1 and the second region R2-1 is a hydrophobic region and the other is a hydrophilic region, the contact angle between the light-emitting layer 125 and the first region R1-1 may be larger. More specifically, the light-emitting layer 125 may be arranged in an arcuate shape in cross-section.

[0183] Therefore, in the present embodiment, the shape of the light-emitting layer 125 can be controlled by adjusting the width of the first region R1-1.

[0184] Figure 7 is a plan view of the display device 1 according to another embodiment. Figure 8 is a cross-sectional view of the display device 1 according to another embodiment.

[0185] In Figure 7 and Figure 8 , reference numerals identical to those used in Figure 1 and Figure 3 denote the same elements, and repeated descriptions will not be given herein.

[0186] In an embodiment, the display device 1 may include a liquid crystal display, an electrophoretic display, an organic light-emitting display, an inorganic light-emitting display, a field emission display, a surface-conductive electron emitter display, a quantum dot display, a plasma display, and a cathode ray display. Hereinafter, although an organic light-emitting display device will be described as an example, the embodiment can be applied to various display devices as described above.

[0187] Referring to Figure 7 , a boundary portion BP may be provided on the inorganic encapsulation layer to surround the display area DA. More specifically, the boundary portion BP may be provided in the non-display area NDA to surround the display area DA.

[0188] Referring to Figure 8 , the thin-film encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In an embodiment, the thin-film encapsulation layer TFE may include a first inorganic encapsulation layer 131, an organic encapsulation layer 132, and a second inorganic encapsulation layer 133. In another embodiment, the thin-film encapsulation layer TFE may further include at least one inorganic encapsulation layer and at least one organic encapsulation layer that are alternately stacked. Hereinafter, for ease of description, the case where the thin-film encapsulation layer TFE includes a first inorganic encapsulation layer 131, an organic encapsulation layer 132, and a second inorganic encapsulation layer 133 will be described in detail.

[0189] Meanwhile, the boundary portion BP may be provided on the first inorganic encapsulation layer 131, and the organic encapsulation layer 132 may extend from the display area DA (see Figure 7)Set to the inner boundary of the boundary portion BP. In an embodiment, the second inorganic encapsulation layer 133 may contact the first inorganic encapsulation layer 131 at the boundary portion BP.

[0190] Figure 9 is a cross-sectional view of a part of the first pixel P1 in a display device according to another embodiment.

[0191] In Figure 9 , reference numerals identical to those used in Figure 4A represent the same elements, and repeated descriptions will not be given herein.

[0192] The first inorganic encapsulation layer 131 included in the boundary portion BP may include second protrusions 131a spaced apart from each other. More specifically, the first inorganic encapsulation layer 131 may include second protrusions 131a at the boundary portion BP, and may also include second lower regions 131b at the boundary portion BP, wherein the second protrusions 131a are respectively connected to the second lower regions 131b.

[0193] In an embodiment, the second protrusions 131a may be spaced apart from each other. For example, the second protrusions 131a may be spaced apart from each other by a second interval d2. The second interval d2 may be the distance between the centers of adjacent second protrusions 131a. In another embodiment, the second protrusions 131a may be spaced apart from each other by different intervals. For example, the interval between the second protrusions 131a may be about 1 μm or greater, and may be about 30 μm or less. More specifically, the second interval d2 may be 10 μm.

[0194] The size of the second protrusions 131a may be set to be about 1 μm or greater, and may be set to be about 30 μm or less. More specifically, the size of the second protrusions 131a may be about 10 μm. Referring to Figure 9 , the second protrusions 131a are set to the same size, but in another embodiment, the second protrusions 131a may have different sizes.

[0195] In an embodiment, the second protrusions 131a may have a rectangular cross-sectional shape. However, in another embodiment, the second protrusions 131a may be polygons such as triangles, trapezoids, etc. in cross-section. More specifically, the width of the second protrusions 131a at a first point may be smaller than its width at a second point closer to the second lower region 131b than the first point. In another embodiment, the second protrusions 131a may include curved portions.

[0196] The first inorganic encapsulation layer 131 may include an inner portion IP disposed inside the inner boundary of the boundary portion BP. At least one of the boundary portion BP and the inner portion IP may be a hydrophilic region, and the other may be a hydrophobic region. More specifically, the boundary portion BP including the second protrusion 131a of the first inorganic encapsulation layer 131 may be a hydrophobic region, and the inner portion IP may be a hydrophilic region. That is, due to the second protrusion 131a, the contact angle with another material (e.g., the organic encapsulation layer 132) at the boundary portion BP may be about 150 degrees or greater. Accordingly, the boundary portion BP may exhibit superhydrophobicity and super waterproofness. As another example, the boundary portion BP may be a hydrophilic region, and the inner portion IP may be a hydrophobic region.

[0197] The organic encapsulation layer 132 may be located on the first inorganic encapsulation layer 131. Specifically, as described above, the organic encapsulation layer 132 may be disposed inside the inner boundary of the boundary portion BP. In other words, the organic encapsulation layer 132 may be located on the inner portion IP and may not be located on the boundary portion BP.

[0198] At least one of the boundary portion BP of the first inorganic encapsulation layer 131 and the inner portion IP of the first inorganic encapsulation layer 131 may be hydrophobic, and the other portion may be hydrophilic. For example, when the organic encapsulation layer 132 includes a hydrophilic material, the boundary portion BP of the first inorganic encapsulation layer 131 may be hydrophobic, and the inner portion IP of the first inorganic encapsulation layer 131 may be hydrophilic. As another example, when the organic encapsulation layer 132 includes a hydrophobic material, the boundary portion BP of the first inorganic encapsulation layer 131 may be hydrophilic, and the inner portion IP of the first inorganic encapsulation layer 131 may be hydrophobic. Accordingly, the organic encapsulation layer 132 may be mainly disposed at the inner portion IP of the first inorganic encapsulation layer 131 and may not be disposed at the boundary portion BP of the first inorganic encapsulation layer 131.

[0199] The arrangement of the boundary portion BP and the inner portion IP may be performed to prevent the organic encapsulation layer 132 from flowing through the non-display area NDA outside the boundary portion BP.

[0200] If the surfaces of the boundary portion BP and the inner portion IP are both hydrophilic or both hydrophobic, it is necessary to further provide a dam structure or a groove to control the flow of the organic encapsulation layer 132 on the first inorganic encapsulation layer 131. The dam structure or the groove may increase the size of the non-display area NDA.

[0201] If the boundary portion BP on which the second protrusion 131a is formed is provided in the non-display area NDA as in the present embodiment, the flow of the organic encapsulation layer 132 may be controlled without an additional dam structure or groove. Accordingly, the area of the non-display area NDA may be reduced.

[0202] Hereinafter, a method of manufacturing a display device having a boundary portion BP formed on a first inorganic encapsulation layer 131 will be described in detail.

[0203] Figures 10A to 10D FIG. is a cross-sectional view for explaining a method of manufacturing a display device according to another embodiment. In Figures 10A to 10D FIG., reference numerals identical to those used in Figure 9 denote the same elements, and repeated descriptions will not be given herein.

[0204] Referring to Figure 10A FIG., a substrate 101 including a display area DA and a non-display area NDA may be prepared first.

[0205] Next, a pixel circuit layer PCL may be formed in the display area DA, and a display element layer DEL may be formed on the pixel circuit layer PCL.

[0206] Thereafter, a first inorganic encapsulation layer 131 may be formed on the first organic light-emitting diode OLED1 and the pixel defining layer 119. The first inorganic encapsulation layer 131 may be formed by using, but not limited to, a common deposition method known in the art. Since the first inorganic encapsulation layer 131 is formed along its lower structure, the upper surface of the first inorganic encapsulation layer 131 may be uneven.

[0207] Referring to Figure 10B FIG., a boundary portion BP including second protrusions 131a spaced apart from each other may be formed on the first inorganic encapsulation layer 131 provided in the non-display area NDA. The boundary portion BP may be formed to surround the display area DA.

[0208] The first inorganic encapsulation layer 131 included in the boundary portion BP may include second protrusions 131a spaced apart from each other. In addition, the first inorganic encapsulation layer 131 may include a second lower region 131b in the boundary portion BP, wherein the second protrusions 131a are respectively connected to the second lower region 131b.

[0209] In an embodiment, the second protrusions 131a may be spaced apart from each other. For example, the second protrusions 131a may be spaced apart from each other by a second interval d2. In another embodiment, the second protrusions 131a may be spaced apart from each other by different intervals. For example, the interval between the second protrusions 131a may be about 1 μm or more and may be about 30 μm or less. More specifically, the second interval d2 may be 10 μm.

[0210] The size of the second protrusions 131a may be set to be about 1 μm or more and may be set to be about 30 μm or less. More specifically, the size of the second protrusions 131a may be about 10 μm. Referring to Figure 10B, the second protrusion 131a is set to the same size, but in another embodiment, the second protrusion 131a may have different sizes.

[0211] In an embodiment, the second protrusion 131a may have a rectangular cross-sectional shape. Although not shown in the drawings, in another embodiment, the second protrusion 131a may be a polygon such as a triangle or a trapezoid in cross-section. More specifically, the width of the second protrusion 131a at a first point may be smaller than its width at a second point that is closer to the second lower region 131b than the first point. In another embodiment, the second protrusion 131a may include a curved portion.

[0212] The first inorganic encapsulation layer 131 may include an inner portion IP disposed inside the inner boundary of the boundary portion BP. At least one of the boundary portion BP and the inner portion IP may be a hydrophilic region, and the other may be a hydrophobic region. More specifically, the boundary portion BP of the second protrusion 131a including the first inorganic encapsulation layer 131 may be a hydrophobic region, and the inner portion IP may be a hydrophilic region.

[0213] When forming the second protrusion 131a in the boundary portion BP, a laser beam generated from a laser source 200 may be used. The laser source 200 may be but is not limited to a common laser source known in the art, such as a UV picosecond laser beam and a femtosecond super laser beam. In addition, the laser source 200 may be changed according to the material included in the first inorganic encapsulation layer 131.

[0214] Referring to Figure 10C , an organic encapsulation layer 132 may be disposed on the first inorganic encapsulation layer 131. More specifically, the organic encapsulation layer 132 may be disposed inside the inner boundary of the boundary portion BP. That is, the organic encapsulation layer 132 may be formed at the inner portion IP. For example, the boundary portion BP may be hydrophobic, the inner portion IP may be hydrophilic, and the organic encapsulation layer 132 may include a hydrophilic material. In this case, the organic encapsulation layer 132 may not be formed on the boundary portion BP.

[0215] Different from the first inorganic encapsulation layer 131, the upper surface of the organic encapsulation layer 132 may be formed to be substantially flat in the inner portion IP.

[0216] Next, referring to Figure 10D , a second inorganic encapsulation layer 133 may be formed on the organic encapsulation layer 132 and the boundary portion BP. Different from the organic encapsulation layer 132, the second inorganic encapsulation layer 133 may be disposed along its lower structure.

[0217] The second inorganic encapsulation layer 133 may be located on the first inorganic encapsulation layer 131 at the boundary portion BP. More specifically, the second inorganic encapsulation layer 133 may be formed to contact the first inorganic encapsulation layer 131 at the boundary portion BP.

[0218] If a boundary portion BP on which a second protrusion 131a is formed is provided in the non-display area NDA as in the present embodiment, the flow of the organic encapsulation layer 132 can be controlled without having an additional dam structure or groove. Therefore, the area of the non-display area NDA can be reduced.

[0219] In addition, as in the embodiment, at least one of the boundary portion BP and the inner portion IP is formed as a hydrophilic region, and the other is formed as a hydrophobic region by using a laser source 200, thereby simplifying the process of manufacturing a display device.

[0220] Figures 3 to 6 The embodiment described in Figures 7 to 10D can be used together with the embodiment described in

[0221] As described above, the embodiment includes protrusions spaced apart from each other in the first display element and a first region between the first display elements so that different light-emitting layers can be easily formed on each of the organic light-emitting diodes emitting different colors.

[0222] In addition, the display device according to the embodiment and the display device manufactured by the method of manufacturing a display device according to the embodiment can minimize the non-display area outside the display area.

[0223] It should be understood that the embodiments described herein should be understood only in a descriptive sense and not for the purpose of limitation. The description of the features or aspects within each embodiment should generally be understood as being applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those of ordinary skill in the art will understand that various changes can be made in form and detail without departing from the spirit and scope as defined by the appended claims.

Claims

1. A display device, comprising: a substrate including a display area and a non-display area; a plurality of display elements disposed in the display area and including a pixel electrode, a common layer, a light-emitting layer, and a counter electrode; and a pixel defining layer having an opening exposing a central portion of the pixel electrode, wherein the common layer includes a first region disposed between a first light-emitting layer and a second light-emitting layer, the first light-emitting layer being disposed in a first display element among the plurality of display elements, and the second light-emitting layer being disposed in a second display element adjacent to the first display element among the plurality of display elements, wherein the common layer further includes a second region in which the light-emitting layer overlaps with the common layer, wherein the first region or the second region has protrusions spaced apart from each other, and wherein a region of the common layer provided with the protrusions has a first surface facing the counter electrode and a second surface opposite to the first surface, and wherein the first surface is provided with the protrusions in addition to the second surface.

2. The display device according to claim 1, wherein, An upper surface of the light-emitting layer is parallel to an upper surface of the substrate.

3. The display device according to claim 1, wherein, The light-emitting layer is disposed between the counter electrode and the common layer and extends from the central portion of the pixel electrode to at least a part of an inner surface of the opening.

4. The display device according to claim 1, wherein, An upper surface of the light-emitting layer is convex.

5. The display device according to claim 4, wherein the width of the second region of the common layer is smaller than the width of the opening exposed by the pixel defining layer, where The light-emitting layer is disposed in the second region.

6. The display device according to claim 4, wherein, The first region extends to an inner surface of the opening.

7. The display device according to claim 4, wherein, The light-emitting layer is disposed between the common layer and the counter electrode in the opening.

8. The display device according to claim 1, wherein, In the first region, the common layer includes a lower region connected to each of the protrusions.

9. The display device according to claim 8, wherein, At least one of the protrusions has a rectangular cross-sectional shape.

10. The display device according to claim 8, wherein, A width of at least one of the protrusions at a first point is smaller than a width of at least one of the protrusions at a second point, and the second point is closer to the lower region than the first point in a thickness direction.

11. The display device according to claim 1, wherein, A spacing between the protrusions spaced apart from each other is 1 μm or more and 30 μm or less.

12. The display device according to claim 1, Among them, wherein at least one of the first region and the second region is a hydrophobic region and the other is a hydrophilic region.

13. A display device, comprising: a substrate including a display area for displaying an image and a non-display area surrounding the display area; a pixel circuit layer including a thin film transistor; a display element including a pixel electrode, a light-emitting layer, and a counter electrode connected to the thin film transistor and located in the display area; and a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer disposed on the display element, wherein the first inorganic encapsulation layer includes a boundary portion located in the non-display area, the boundary portion includes protrusions spaced apart from each other, the boundary portion surrounds the display area, and the organic encapsulation layer is disposed so as not to overlap with the boundary portion.

14. The display device according to claim 13, wherein, The second inorganic encapsulation layer contacts the first inorganic encapsulation layer at the boundary portion.

15. The display device according to claim 13, wherein, The first inorganic encapsulation layer includes a lower region connected to the protrusions at the boundary portion.

16. The display device according to claim 15, wherein, The protrusions in the first inorganic encapsulation layer each have a rectangular cross-sectional shape at the boundary portion.

17. The display device according to claim 15, wherein, The width of at least one of the protrusions at a first point is less than the width of at least one of the protrusions at a second point, the second point being closer to the lower region than the first point in the thickness direction.

18. The display device according to claim 14, wherein, The first inorganic encapsulation layer includes an inner portion provided inside the inner boundary of the boundary portion, and wherein at least one of the boundary portion and the inner portion is a hydrophilic region and the other is a hydrophobic region.

19. A method of manufacturing a display device, the method comprising: preparing a substrate including a display region and a non-display region; forming a display element in the display region; forming a first inorganic encapsulation layer on the display element; forming a boundary portion including protrusions spaced apart from each other on the first inorganic encapsulation layer provided in the non-display region; forming an organic encapsulation layer on the first inorganic encapsulation layer inside the inner boundary of the boundary portion; and forming a second inorganic encapsulation layer on the organic encapsulation layer and the boundary portion.

20. The method according to claim 19, wherein, The second inorganic encapsulation layer contacts the first inorganic encapsulation layer at the boundary portion.

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