Inductor device and stacked power supply topology

Abstract

This disclosure relates to an inductor device and a stacked power supply topology. According to one configuration, an inductor device includes: a core material and one or more conductive paths. The core material is magnetically permeable and surrounds (encloses) the one or more conductive paths. Each conductive path extends through the core material of the inductor device from a first end to a second end of the inductor device. The magnetically permeable core material is operable to define (guide, carry, transport, localize, etc.) a corresponding magnetic flux generated from a current flowing through the corresponding conductive path. The core material stores the magnetic flux energy (i.e., the first magnetic flux) generated from the current flowing through the first conductive path. One configuration of this document includes a power converter assembly comprising a stack of components including the inductor device as described above, a first power interface, a second power interface, and one or more switches.

Description

Background Technology

[0001] Conventional switching power supply circuits sometimes include energy storage components such as inductors to generate an output voltage that supplies power to the load. For example, in order to keep the output voltage amplitude within a desired range, the controller uses one or more inductors to control the switching of the input current.

[0002] Typically, a conventional inductor is a component comprising wires and other conductive material shaped into coils or helices to increase the amount of magnetic flux passing through the corresponding circuit path. Winding the wires into multi-turn coils increases the number of corresponding magnetic flux lines in the inductor component, increasing the magnetic field and thus increasing the overall inductance of the inductor component. Summary of the Invention

[0003] This disclosure includes observations of conventional inductor components suitable for planar circuit applications, where the respective planar surface of a power supply board is filled with various different components, which are then coupled to each other via circuit traces disposed on the planar surface. This topology (providing horizontal power flow in the power supply board) inevitably makes it difficult to form compact, efficient, and high-current output power supply circuits. Therefore, conventional power supply circuits implementing one or more inductors are not desirable.

[0004] More specifically, for power converters aiming to provide a 1000Amp output current at an output voltage below 2V, existing technology implements the voltage regulator through a power supply circuit that achieves horizontal power flow. The main problem with using conventional topologies for achieving horizontal power flow is:

[0005] • Because of the potential interference with the I / O tracks required for high-frequency communication by the CPU with memory and other cores, the PoL (Point of Load) level of the corresponding circuit cannot be moved closer to the CPU (Central Processing Unit) load.

[0006] • Pure conduction loss of the copper rail at the output of the VRM (Voltage Regulator Module), which is used to feed current into the processor via the channel;

[0007] • This involves very close and potential coupling of the VRM's noise with the data channel on either side of the output channel;

[0008] The impedance of the copper rail limits the maximum instantaneous response speed;

[0009] • To handle transient responses, a large number of output capacitors and cavity capacitors are required close to and below the processor;

[0010] • It consumes a significant amount of surface space on the CPU load side of the corresponding motherboard;

[0011] As the dynamic current consumption of the corresponding load increases, all of the above problems will worsen.

[0012] Compared to conventional techniques, the embodiments described herein provide novel and improved inductor components and novel and improved stacked power converter topologies.

[0013] First Embodiment – ​​Improved Inductor Components

[0014] The first embodiment of this article provides a novel inductor device and a method for manufacturing the inductor device.

[0015] For example, a manufacturer produces an inductor device (component) comprising: a magnetic core material and a first conductive path. The magnetic core material is magnetically permeable and surrounds (encloses) the first conductive path. The first conductive path (first inductive path) extends through the magnetic core material of the inductor device from a first end (such as a proximal end) to a second end (such as a distal end of the inductor device). The magnetically permeable core material is operable to define (and / or guide, carry, transport, localize, etc.) a first magnetic flux generated from a first current flowing through the first conductive path. The core material is operable to store the magnetic flux energy (i.e., the first magnetic flux) generated from the current flowing through the first conductive path.

[0016] According to a further embodiment, the manufacturing apparatus manufactures an inductor device including: a second conductive path (second induction path) spaced apart from a first conductive path in a core material. The second conductive path extends through the core material from a first end to a second end of the inductor device. The magnetically permeable core material is operable to define (guide, carry, transport, localize, etc.) a second magnetic flux generated from a second current flowing through the second conductive path.

[0017] In other embodiments, the manufacturing apparatus manufactures an inductor device to include a third conductive path extending from a first end of the inductor device to a second end. The third conductive path is a return path operable to transport a first current (from the first conductive path) and a second current (from the second conductive path) back to a reference voltage (such as ground).

[0018] Further embodiments of this document include a first conductive path and a second conductive path in parallel for manufacturing an inductor device.

[0019] In other embodiments, the second conductive path is fabricated to be magnetically coupled to the first conductive path, wherein the flow of a second current through the second conductive path (via magnetic flux) induces the flow of a current through the first conductive path.

[0020] The coupling coefficient between the first and second conductive paths in an inductor device can be any suitable value. For example, in one embodiment, the inductive coupling coefficient between the first and second conductive paths can be between 0.6 and 0.95. In some instances, the inductive coupling can be less than 0.6 and as low as 0.

[0021] In other embodiments, the manufacturing apparatus creates a second conductive path extending from a first end of the inductor device to a second end of the inductor device; the second conductive path includes a ring (or shield) of metallic material, with the first conductive path and core material located within the ring (or shield) of metallic material.

[0022] The core material can be made of any suitable material and has any suitable flux permeability. In one embodiment, the core material has a flux permeability between 30 and 50 Henry / meter. According to a further embodiment, the core material has a flux permeability between 10 and 1000 Henry / meter.

[0023] In other embodiments, the manufacturing apparatus manufactures the inductor device such that the core material through which the first conductive path passes does not include any air gaps.

[0024] According to other embodiments, the manufacturing apparatus manufactures an inductor device as described herein, comprising: a first open material ring, the first open material ring including a first bent metal material layer (a first induction path) and a second bent metal material layer (a second induction path). The first bent metal material layer is a first conductive path extending through a magnetic core material. The second bent metal material layer is a second conductive path extending through a magnetic core material. In a manner similar to that previously discussed, the first open material ring (the first bent layer and the second bent layer) extends from a first end of the inductor device (such as an input end of a first node) to a second end of the inductor device (such as an output end or an output node).

[0025] In other embodiments, the manufacturing apparatus manufactures an inductor device comprising: a third bent metal material layer and a fourth bent metal material layer extending through a magnetic core material. The third bent metal material layer is a third conductive path (induction path) extending through the magnetic core material. The fourth bent metal material layer is a fourth conductive path (induction path) extending through the magnetic core material. In one embodiment, the manufacturing apparatus manufactures the third and fourth bent metal material layers as part of a second open material ring, a portion of which is concentrically disposed relative to the previously discussed first open material ring (the first and second bent metal material layers in the inductor device).

[0026] Other embodiments described herein include fabricating one or more conductive paths in a magnetic core material into a cylindrical shape. The magnetic core material surrounds one or more conductive paths (induction paths) in an inductor device. In one embodiment, the magnetic core material contacts or surrounds a corresponding surface of one or more conductive paths.

[0027] In other embodiments, the manufacturing apparatus manufactures an inductor device including: a first set of conductive paths configured to form a first ring; the first set of conductive paths includes first conductive paths, each of which extends from a first end of the inductor device to a second end of the inductor device. The manufacturing apparatus further manufactures the inductor device including: a second set of conductive paths configured in a second ring. Each conductive path in the second set extends from the first end of the inductor device to the second end of the inductor device. In one embodiment, the first ring of conductive paths is concentric with respect to the second ring of conductive paths.

[0028] In other embodiments, each conductive path (such as a post, rod, bent surface, etc.) in one or more conductive paths through the core material of the inductor device follows a corresponding non-winding path from a first end of the inductor device to a second end of the inductor device. Therefore, one or more conductive paths as described herein are easy to manufacture.

[0029] In other embodiments, embodiments of this document include a system comprising: a circuit board; and one or more inductor devices described herein. In one embodiment, the inductor devices are disposed in a power converter (such as a power stack assembly or other suitable hardware) attached to the circuit board; the power converter is operable to generate an output voltage (output current) to supply power to a load attached to the circuit board or to a load attached to the power stack assembly.

[0030] Further embodiments described herein include the manufacture of the system. For example, embodiments of this document include housing a circuit board; attaching a power converter to the circuit board, the power converter circuitry including one or more inductor devices described herein. The power converter is operable to generate an output voltage (output current) to power a load attached to the circuit board.

[0031] The inductor device described herein offers advantages over and is beneficial compared to conventional inductor devices. For example, the inductance provided by each conductive path (inductance path) in the inductor device described herein is easily controlled based on parameters such as: i) the distance between the first and second ends of the inductor device, ii) the permeability of the core material, and iii) the number of parallel conductive paths extending through the inductor device. It is further noted that the inductor device described herein is easy to manufacture and provides relatively low inductance values.

[0032] Second embodiment – ​​Stacked power converter

[0033] The second embodiment of this document includes a novel stacked power converter and a method for manufacturing the stacked power converter.

[0034] For example, a manufacturing apparatus manufactures a power converter based on stacking multiple components, including a first power interface, one or more switches, one or more inductor devices, and a second power interface. The manufacturing apparatus places the first power interface on a base of the stack. The manufacturing apparatus couples multiple switches to the first power interface to receive power. The manufacturing apparatus connects the inductor devices to the multiple switches; the inductor devices are operable to generate an output voltage (output current) based on the received power. The manufacturing apparatus connects the second power interface to the inductor devices, the second power interface being operable to receive and output the output voltage (output current) generated by the inductor devices.

[0035] According to other embodiments, the manufacturing apparatus arranges one or more switches in the stack between a first power interface and an inductor device; the manufacturing apparatus arranges the inductor device in the stack between a plurality of switches and a second power interface.

[0036] In other embodiments, the manufacturing apparatus manufactures a first power interface to include a first contact element operable to connect the first power interface located at the base of the stack to a main substrate. The manufacturing apparatus manufactures a second power interface to include a second contact element operable to attach a dynamic load to the stack.

[0037] Further embodiments described herein include attaching a dynamic load to a second power interface, operable to deliver an output voltage (output current) from an inductor device to the dynamic load. Additionally, a manufacturing apparatus fabricates a first power interface to couple a plurality of switches to an input voltage node (from which an input voltage is received) and a reference voltage node (from which a ground reference voltage is received). In one embodiment, one or more switches in the stack are vertical field-effect transistors disposed between the first power interface and the inductor device.

[0038] In other embodiments, the manufacturing apparatus arranges multiple switches in the stack to switch between coupling an input voltage and a reference voltage received through a first power interface to one or more sensing paths of an inductor device. In one embodiment, one or more sensing paths of the inductor device extend from the multiple switches in the stack to a second power interface in the stack.

[0039] In other embodiments, the stack of manufactured components (such as a first power interface, one or more switches, an inductor device, and a second power interface) is a power converter operable to convert an input voltage received at the first power interface into an output voltage (output current) output from the second power interface. The manufacturing apparatus manufactures the inductor device to include multiple sensing paths. The manufacturing apparatus arranges the multiple sensing paths in the stack between multiple switches and the second power interface. In some embodiments, the manufacture of the multiple sensing paths includes: manufacturing multiple sensing paths including a first sensing path and a second sensing path extending through the core material of the inductor device. The first sensing path is disposed in a first phase of the power converter; the second sensing path is disposed in a second phase of the power converter. During operation of the power converter, the first and second phases are combined and disposed in parallel, and together generate the output voltage (output current).

[0040] Additionally or alternatively, in other embodiments, the plurality of induction paths includes a first induction path and a second induction path: the first induction path is disposed in one phase of the power converter, and the second induction path is magnetically coupled to the first induction path to apply magnetic energy conditioning (providing voltage output boost capability) to the first induction path. In this example, the combination of phase from the second induction path and inputs (such as magnetic energy conditioning) is operable to generate an output voltage (output current).

[0041] Other embodiments described herein include manufacturing an inductor device to include one or more sensing paths extending from a first layer in a stack including one or more switches to a second layer in a stack including a second power interface. In such an example, each of the one or more sensing paths is a corresponding unwinding path extending from a first layer in a stack including multiple switches to a second layer in a stack including a second power interface.

[0042] More specifically, the manufacturing apparatus manufactures the inductor device's sensing path to include a first sensing path and a second sensing path. The first sensing path is manufactured as a first unwound path extending from a first layer in the stack including a plurality of switches to a second layer in the stack including a second power interface, and the second sensing path is manufactured as a second unwound path extending from the first layer in the stack including a plurality of switches to a second layer in the stack including a second power interface.

[0043] In other embodiments, the manufacturing apparatus manufactures an inductor device including: i) a core material, the core material being a magnetically permeable ferromagnetic material, and ii) a first conductive path extending through the core material from a first end of the inductor device to a second end of the inductor device, the presence of the core material causing the first conductive path to become a first inductive path.

[0044] As previously discussed, the manufacturing apparatus can be configured to create any number of inductive paths (conductive paths) through the core material. In one embodiment, the manufacturing apparatus manufactures an inductor device to include a second conductive path extending through the core material from a first end of the inductor device to a second end of the inductor device. As discussed herein, the presence of a magnetically permeable core material in the inductor device makes the second conductive path a second inductive path.

[0045] Other embodiments described herein include connecting multiple inductance paths (such as a first inductance path and a second inductance path) of an inductor device in parallel. Any number of inductance paths in an inductor device can be connected in parallel to provide a desired overall inductance. Therefore, in addition to controlling parameters such as the permeability of the core material and the corresponding length of each non-winding conductive path in the inductor device, embodiments described herein may include connecting two or more inductance paths in parallel to control the inductance.

[0046] Other embodiments described herein include fabricating a stack to include a second conductive path extending from a first layer of the stack including a first power interface to a second layer of the stack including a second power interface, the second conductive path being coupled to a reference voltage node. In one embodiment, the second conductive path of the inductor device provides peripheral electromagnetic shielding.

[0047] In other embodiments, the manufacturing apparatus provides a second conductive path in a first layer of the stack, the second conductive path being coupled to an input voltage node; the manufacturing apparatus manufactures the stack to include a first capacitor coupled between the first and second conductive paths. The manufacturing apparatus further provides a third conductive path in a second layer of the stack, including a second power interface, the third conductive path being operable to deliver an output voltage (output current) to a dynamic load, such as a dynamic load. In one embodiment, the manufacturing apparatus manufactures the stack to include a second capacitor in a third layer; in this instance, the second capacitor is coupled between the third and second conductive paths.

[0048] Other embodiments described herein include, via a manufacturing apparatus: manufacturing a plurality of switches including a first switch and a second switch; coupling the source node of the first switch to a reference voltage node of a first power interface; coupling the drain node of the first switch to the induction path of an inductor device; coupling the drain node of the second switch to an input voltage node of the first power interface; and coupling the source node of the second switch to the induction path of the inductor device. Other embodiments described herein include, coupled a controller to a stack. The controller is operable to control the switching of the first and second switches to convert an input voltage received at the input voltage node into an output voltage (output current).

[0049] In other embodiments, embodiments of this document include a system comprising: a circuit board (such as a standalone board, a motherboard, a standalone board for coupling to a motherboard, etc.); a component stack (such as a power stack assembly) including one or more inductor devices; and a load powered by an output voltage (output current). The load can be any suitable circuitry, such as a CPU (Central Processing Unit), GPU, and ASIC (such as those ASICs including one or more artificial intelligence accelerators), which can be located on a standalone circuit board.

[0050] Further embodiments described herein include the fabrication of the system. For example, embodiments described herein include housing a circuit board; attaching a base to a component stack (such as a power stack assembly) to the circuit board, the component stack being operable to generate an output voltage (output current) to power a load attached to the circuit board.

[0051] Stacking as described herein (such as vertically stacked components) offers advantages over conventional power converters. For example, power converter stacking as described herein provides novel connectivity (such as via stacking) of components within a module, resulting in shorter circuit paths and lower losses.

[0052] These and other more specific embodiments are disclosed in more detail below.

[0053] It should be noted that any resources implemented in the systems discussed herein (such as manufacturing apparatus) may include one or more computerized devices, controllers, mobile communication devices, handheld or laptop computers, etc., to implement and / or support any or all of the methods disclosed herein. In other words, one or more computerized devices or processors may be programmed and / or configured to operate as described herein to implement the different embodiments as described herein.

[0054] Other embodiments described herein include software programs for performing the steps and operations outlined above and disclosed in detail below. One such embodiment includes a computer program product comprising a non-transitory computer-readable storage medium (i.e., any computer-readable hardware storage medium) on which software instructions are encoded for subsequent execution. When these instructions are executed in a computerized device (hardware) having a processor, the processor (hardware) is programmed and / or caused to perform the operations disclosed herein. Such arrangements are typically provided as software, code, instructions, and / or other data (e.g., data structures) set or encoded on a non-transitory computer-readable storage medium such as optical media (e.g., CD-ROM), floppy disks, hard disks, memory sticks, memory devices, etc., or other media such as firmware in one or more ROMs, RAMs, PROMs, etc., or provided as application-specific integrated circuits (ASICs), etc. Software or firmware or other such configurations may be installed on a computerized device to cause the computerized device to perform the techniques described herein.

[0055] Therefore, the embodiments herein relate to methods, systems, computer program products, etc., that support the operations discussed herein.

[0056] One embodiment includes a manufacturing apparatus, such as including a computer-readable storage medium and / or system having instructions thereon for manufacturing an inductor device. When executed by computer processor hardware, the computer processor hardware (such as one or more processor devices or hardware located in one place or in different locations) causes: a core material, the core material being a magnetically permeable material; and a first conductive path disposed in the core material, the first conductive path extending through the core material from a first end of the inductor device to a second end of the inductor device, the core material being operable to define a first magnetic flux generated from a current flowing through the first conductive path.

[0057] Another embodiment described herein includes a manufacturing apparatus, such as including a computer-readable storage medium and / or system having instructions thereon for manufacturing a power stack device. When executed by computer processor hardware, the computer processor hardware (such as one or more processor devices or hardware located in one or different locations) causes to: dispose of a first power interface at the base (first layer) of a stack (such as a power stack assembly of power converter components); electrically couple a plurality of switches (disposed on a second layer of the stack) to the first power interface to receive power; electrically connect an inductor device (disposed on a third layer of the stack) to the plurality of switches, the inductor device being operable to generate an output voltage (output current) based on the received power; and electrically connect a second power interface (disposed on a fourth layer of the stack) to the inductor device, the second power interface being operable to receive and output the output voltage (output current) generated by the inductor device.

[0058] For clarity, the order of the above steps has been added. Note that any processing steps as discussed herein can be performed in any suitable order.

[0059] Other embodiments of this disclosure include software programs and / or corresponding hardware for performing the steps and operations of any of the method embodiments outlined above and disclosed in detail below.

[0060] It should be understood that the systems, methods, apparatuses, instructions on computer-readable storage media disclosed herein may also be strictly embodied as software programs, firmware, or a mixture of software, hardware and / or firmware, or as separate hardware, within a processor (hardware or software), an operating system, or a software application.

[0061] It should be further noted that while the embodiments discussed herein are applicable to switching power supplies, the concepts disclosed herein can be advantageously applied to any other suitable topology.

[0062] Additionally, it should be noted that while each of the different features, techniques, configurations, etc., described herein may be discussed in different places within this disclosure, each concept may optionally be implemented independently of each other or in combination with each other where appropriate. Therefore, one or more of the inventions as described herein can be embodied and viewed in many different ways.

[0063] Furthermore, it should be noted that the preliminary discussion of the embodiments herein (a brief description of the embodiments) is not intended to specify every embodiment and / or progressive novelty of this disclosure or the claimed invention(s). Rather, this brief description only presents the general embodiments and corresponding novel points that are superior to conventional techniques. For additional details and / or possible perspectives (arrangements) of the invention(s), the reader is directed to the detailed description section of this disclosure (which is an overview of the embodiments) and the corresponding drawings, which are discussed further below. Attached Figure Description

[0064] Figure 1A This is an example diagram illustrating a three-dimensional (perspective) view of an inductor device according to an embodiment of this article.

[0065] Figure 1B This is an example diagram illustrating a top view of an inductor device according to an embodiment of this article.

[0066] Figure 1C This is an example three-dimensional illustration of an inductor device according to an embodiment of this document.

[0067] Figure 1D This is an example diagram illustrating different combinations of induction paths (conduction paths) of a connected inductor device according to embodiments of this article.

[0068] Figure 2 This is an example diagram illustrating the magnitude of the magnetic flux density in the core material of an inductor device according to an embodiment of this article.

[0069] Figure 3A This is an example top view of an inductor device (inductor assembly) according to embodiments of this article.

[0070] Figure 3B The illustration is based on an embodiment of this document. Figure 3A An example diagram of magnetic flux density in an inductor device.

[0071] Figure 4 This is an example top view of an inductor device comprising multiple conduction paths (induction paths) connected in parallel, according to embodiments of this document.

[0072] Figure 5 This is a top view illustrating multiple conduction paths in an inductor device according to an embodiment of this article.

[0073] Figure 6 This is an example top view illustrating an arc-shaped or concentric conduction path in an inductor device according to an embodiment of this article.

[0074] Figure 7 This is an example top view illustrating an arcuate conduction path arranged in an inductor device according to an embodiment of this article.

[0075] Figure 8A This is an example top view of an inductor device according to embodiments of this article.

[0076] Figure 8B The illustration is based on an embodiment of this document. Figure 8A An example diagram of flux density in an inductor device.

[0077] Figure 9A This is an example diagram illustrating an arcuate conduction path (induction path) provided in an inductor device according to an embodiment of this article.

[0078] Figure 9B The illustration is based on an embodiment of this document. Figure 9A An example diagram of the density of magnetic flux in an inductor device.

[0079] Figure 10A This is an example diagram illustrating the arc-shaped conduction path (induction path) provided in an inductor device according to an embodiment of this article.

[0080] Figure 10B The illustration is based on an embodiment of this document. Figure 10A An example diagram of magnetic flux density in an inductor device.

[0081] Figure 11 This is an example diagram illustrating the connectivity of multiple conduction paths and the corresponding magnetic coupling according to embodiments of this article.

[0082] Figure 12 This is an example diagram illustrating the connection of circuit components in a power supply according to an embodiment of this document.

[0083] Figure 13 This is an illustration of a device supporting vertical power flow according to an embodiment of this document. Figure 12 Example side view of a multi-phase power supply.

[0084] Figure 14 This is an example diagram illustrating the connection of circuit components in a power supply according to an embodiment of this article.

[0085] Figure 15 The illustration shows a support for vertical power flow according to an embodiment of this document. Figure 14 Example side view of the power supply.

[0086] Figure 16 This is an example diagram illustrating a multi-stage power converter circuit and a corresponding bypass circuit according to embodiments of this document.

[0087] Figure 17 This is an example diagram illustrating a power supply according to an embodiment of this document.

[0088] Figure 18This is an example diagram illustrating an example computer architecture (manufacturing apparatus system, hardware, etc.) operable to perform one or more methods according to embodiments of this document.

[0089] Figure 19 This is an example diagram illustrating a method according to an embodiment of this article.

[0090] Figure 20 This is an example diagram illustrating a method according to an embodiment of this article.

[0091] Figure 21 This is an example diagram illustrating a circuit assembly according to an embodiment of this article.

[0092] Figure 22 This is an example diagram illustrating a circuit assembly according to an embodiment of this article.

[0093] Figure 23 This is an example diagram illustrating a circuit assembly according to an embodiment of this article.

[0094] The foregoing and other objects, features, and advantages of the embodiments illustrated herein, as described in the more specific description below and as illustrated in the accompanying drawings, will become clear throughout the various views, with the same reference numerals referring to the same parts. The drawings are not necessarily drawn to scale, but are intended to illustrate embodiments, principles, and concepts. Detailed Implementation

[0095] A first embodiment of this document includes a novel and improved inductor device. The inductor device includes a core material and one or more conductive paths. The core material is magnetically permeable and surrounds (encloses) the one or more conductive paths. Each conductive path extends from a first end to a second end of the inductor device through the core material. The magnetically permeable core material is operable to define (and / or guide, carry, transport, localize, etc.) a corresponding magnetic flux generated according to the current flowing through the corresponding conductive path. The core material stores the magnetic flux energy (i.e., the first magnetic flux) generated from the current flowing through the first conductive path. In one embodiment, the inductor device includes a second conductive path.

[0096] A second embodiment of this document includes a power converter assembly comprising a component stack. The component stack includes a first power interface, a plurality of switches, inductor devices, and a second power interface. The first power interface is disposed at the base of the stack. The plurality of switches are coupled to the first power interface to receive power. One or more inductor devices are connected to the plurality of switches. The inductor devices are operable to generate an output voltage (output current) based on the power received from the switches. The second power interface is connected to the inductor devices and is operable to receive the output voltage (output current) from the one or more inductor devices and output the output voltage (output current) to a dynamic load.

[0097] The embodiments described herein address, but are not limited to, the problem of providing continuous regulation while offering reduced processor core voltage (lower source voltage) despite large transient current consumption fluctuations. One objective of the embodiments described herein is to accommodate rapid power consumption, such as variations between 0 and 1000 Amp, while maintaining regulation of the corresponding power supply output voltage (output current).

[0098] Some embodiments described herein involve fabricating the final power stage of a power supply (such as a DC-DC converter, or commonly referred to as a VRM or point-of-load converter) and placing it directly under a dynamic processor load. This implementation provides a vertical power flow rather than the conventional horizontal power flow discussed previously, compared to conventional techniques. Positioning power converter components (such as stacks) directly under a dynamic load, as described herein, offers advantages over conventional techniques, such as:

[0099] • Significantly reduces conduction losses between the output of the corresponding DC-DC converter and the dynamic load processor;

[0100] • Significantly reduces noise coupled from DC-DC converter components to the data signal;

[0101] • Significantly improved transient response (such as rapidly increasing or decreasing the amount of current delivered to the load);

[0102] • Significantly reduces the need for cavity / output capacitors;

[0103] • Improved overall power density;

[0104] • This immediately frees up motherboard space adjacent to the dynamic load processor for other peripheral components or circuitry.

[0105] More specifically, the implementation of this paper can achieve a minimal possible power loop by operating primarily via a vertical power flow, which significantly reduces parasitic inductance and the associated switching losses.

[0106] Now refer to the attached diagram, Figure 1A This is an example diagram illustrating a three-dimensional view of an inductor device according to an embodiment of this article.

[0107] As shown in the figure Figure 1AThe inductor device 110 includes a magnetic core material 120 and conductive paths 131 and 132. The magnetic core material 120 surrounds each conductive path 131 and 132. If necessary, each conductive path 131 and 132 is surrounded by an insulating material (such as a non-conductive material, so as not to form contact with the magnetic core material 120). This transforms conductive path 131 into a first inductive path; this transforms conductive path 132 into a second inductive path.

[0108] The core material 120 surrounding the conductive paths 131 and 132 is magnetically permeable. This core material can be made of any suitable material. In one embodiment, as a non-limiting example, the core material 120 has a flux permeability between 25 and 60 Henry / m.

[0109] In other embodiments, the manufacturing apparatus 140 described herein manufactures the inductor device 110 such that the core material 120 through which the first conductive path 131 passes does not contain any air gaps or voids that are not filled by a magnetically conductive material.

[0110] As discussed further herein, the inductor device 110 can be manufactured to include any number of conduction paths disposed within the surrounding conduction path 133.

[0111] In other embodiments, each of the conductive paths 131, 132, and 133 is made of any suitable conductive material, such as metal, metal alloy, etc.

[0112] In other embodiments, each of the conductive paths 131 and 132 passes through the core material 120 of the inductor device 110 and extends from a first axial end (also referred to as a first orientation, interface, etc.) of the inductor device 110 to a second axial end (also referred to as a second orientation, interface, etc.) of the inductor device 110. Thus, in one embodiment, the inductor device 110 is an axial device having an input axial end 141 and an output axial end 142.

[0113] Conductive paths 131 and 132 can be manufactured in any suitable shape, such as rod-shaped, cylindrical, curved surface, toroidal, open ring, etc. In one embodiment, each conductive path is a non-winding circuit path extending through the inductor device 110. Note that regardless of the embodiment, the overall shape of the inductor device is cylindrical (in a strict geometric sense, as generated by the busbar), but further embodiments herein implement the inductor device and corresponding elements in any suitable shape, size, and manner.

[0114] Figure 1B This is an example diagram illustrating a top view of an inductor device according to an embodiment of this article.

[0115] As shown in the top view of inductor device 110, each of conductive paths 131 and 132 is located within the boundary of surrounding conductive path 133, which includes the perimeter of inductor device 110 (via a curved shield).

[0116] Therefore, embodiments herein include fabricating a conductive path 133 to extend from a first end 141 of the inductor element 110 to a second end 142 of the inductor device 110; the second conductive path 133 may be a metal ring in which the first conductive paths 131 and 132 and the core material 120 are located.

[0117] Figure 1C This is an example three-dimensional illustration of an inductor device according to an embodiment of this document.

[0118] This example embodiment illustrates the current flow through each of the conductive paths 131, 132, and 133.

[0119] For example, current 151 flows through conductive path 131 (in the upward direction). According to the right-hand law, current 151 flowing through conductive path 131 generates magnetic flux 161, which penetrates a corresponding first portion of the magnetic core material 120 in inductor device 110.

[0120] As further shown, current 152 flows through conductive path 132 (in the upward direction). According to the right-hand law, current 152 flowing through conductive path 132 generates magnetic flux 162, which penetrates the corresponding second portion of magnetic core material 120 in inductor device 110.

[0121] In one embodiment, the first conduction path 131 is magnetically coupled to the second conduction path 132.

[0122] In one embodiment, conductive path 133 provides a return path for a combination of currents 151 and 152 (such as current delivered to a load). As shown, conductive path 133 carries a downward current 153 (return current from the load).

[0123] The directions of currents 151, 152, and 153 are shown through limiting example embodiments. Note that currents 151, 152, and 153 can flow in any direction.

[0124] According to a further embodiment, the magnetic material 120 of the inductor device 110 is operable to limit (guide, carry, transport, localize, etc.) the corresponding magnetic fluxes 161 and 162 generated according to the current flowing through the corresponding conductive paths 131 and 132.

[0125] For example, the core material 120 temporarily stores at least a first magnetic flux energy 161 (i.e., magnetic flux) generated by the current 151 flowing through the first conductive path 131; the core material 120 stores a second magnetic flux energy 162 (i.e., magnetic flux) generated by the current 152 flowing through the second conductive path 132; and so on.

[0126] The presence of the magnetic core material 120 makes the conduction path 131 a first induction path, which extends through the magnetic core material 120 from the first end 141 (or toward) of the inductor device 110 to the second end 142 (or toward) of the inductor device 110.

[0127] In other embodiments, the second conductive path 132 is fabricated to be magnetically coupled to the first conductive path 131, wherein the flow of the second current 152 through the second conductive path 132 senses (via magnetic flux coupling) the flow of the current 151 through the first conductive path 131.

[0128] Note that the coupling coefficient between the first conductive path 131 and the second conductive path 132 in the inductor device 110 can be any suitable value. For example, in one embodiment, the inductive coupling coefficient between the first conductive path 131 and the second conductive path 132 is between 0.6 and 0.95. In other embodiments, the first conductive path 131 is a network magnetically coupled to the second conductive path 132.

[0129] In other embodiments, each of one or more conductive paths 131, 132, etc. (such as pillars, rods, curved surfaces, etc.) passing through the core material 120 of the inductor device 110 follows a corresponding non-winding path from the first end 141 to the second end 142 of the inductor device 110. Therefore, it is easy to fabricate one or more conductive paths 131, 132, etc. as described herein.

[0130] The inductor device described herein offers advantages over conventional inductor devices. For example, the inductance provided by each conductive path in the inductor device is easily controlled based on parameters such as: i) the distance d between the first end 141 and the second end 142 of the inductor device 110, ii) the permeability of the core material 120, iii) the number of parallel conductive paths traversing the inductor device 110, and so on. The inductor device 110 described herein is easy to manufacture and provides a relatively low inductance value for applications in any circuit. In one embodiment, as further discussed herein, the inductor device 110 is suitable for use in stacked circuits such as power converter circuits.

[0131] Note that in one embodiment, the inductor device 110 (such as a so-called tubecore) is essentially a low / flat coupled inductor component (including one or more inductive paths) that operates using vertical current flow. The inductor device 110 may include any number of conductive paths (such as two or more).

[0132] Figure 1D This is an example diagram illustrating different combinations of induction paths (conduction paths) of a connected inductor device according to embodiments of this article.

[0133] Further embodiments of this document include fabricating a first conductive path and a second conductive path of the inductor device 110 as parallel connections, such as by... Figure 1D As indicated by the instantiation form 191 of (inductor device 110).

[0134] Further embodiments of this document include a first conductive path and a second conductive path in manufacturing an inductor device 110, such that conductive paths 131 and 132 are connected at a second end 142 instead of the first end, as described by Figure 1D As indicated by the instantiation form 192 of (inductor device 110).

[0135] Further embodiments of this document include a first conductive path 131 and a second conductive path 132 in manufacturing an inductor device 110, such that conductive paths 131 and 132 are connected at a first end 141 rather than at a second end 142, as described by Figure 1D As indicated by the instantiation form 193 of (inductor device 110).

[0136] Refer again Figure 1C In one embodiment, currents 151 and 152 may be configured to flow in the same direction through conductive paths 131 and 132 (such as from the first end 141 to the second end or from the second end 142 to the first end).

[0137] It should be noted that, as discussed further herein, conductive paths 131 and 132 (such as pillars, rods, etc.) can be implemented in any suitable manner (such as toroidal, concentric or co-centric toroidal structures, etc.).

[0138] exist Figure 1C In the example embodiment, multiple conductive paths 131 and 132 are surrounded by a magnetic core material 120. Each conductive path can be electrically isolated from the magnetic core material 120 via a layer of insulating material between the conductive path and the magnetic core material 120.

[0139] Outside the core material 120 is a return path or ground connection (such as the conductive path 133 discussed earlier). The return path (conductive path 133) can be in direct contact with the core material 120, or the return path can be isolated from the core material 120 using an insulating layer (not part of the core material 120).

[0140] According to a further embodiment, the thickness d of the inductor device 110 (die) can be adjusted to suit the needs of the application. For example, changing the thickness d causes a change in the inductance value associated with the inductor device 110. In one embodiment, since the two currents 151 and 152 induce the same flux orientation around themselves in the core material 120, the regions directly between the two conductive paths 131 and 132 have opposite fluxes. Therefore, the flux in these regions is eliminated when the two currents have the same value, or at least reduced when the currents are not the same.

[0141] Figure 2 This is an example diagram of a top view (finite element method - FEM) simulation of the magnetic flux density in the core material of an inductor device according to an embodiment of this article.

[0142] In this example embodiment, the flux density simulation assumes that conductive paths 131 and 132 are connected in parallel, with a current of 60 Amp flowing through each conductive path.

[0143] The core material 120 has a relative permeability (μr) of approximately 40. Further, in this example simulation embodiment, the diameter D of each conductive path 131 and 132 is 1.5 mm, the diameter DT of the inductor device 110 is 10 mm, and the thickness d of the inductor device (e.g., ...) is... Figure 1A The d in the figure (from the first end 141 to the second end 142) is 4 mm. The resulting inductance associated with the parallel conduction paths 131 and 132 is approximately 32 nH (nanohyn).

[0144] Typically, zones 214 and 215 indicate low flux density, which indicates flux elimination occurring in the zones between the two conductive paths 131 and 132.

[0145] More specifically, Figure 2 The simulation of the inductor device in the image indicates that shaded region 211 has a magnetic flux density of approximately 0.072 Tesla; shaded region 212 has a magnetic flux density of approximately 0.215 Tesla; region 213 has a magnetic flux density of approximately 0.310 Tesla; region 214 has a magnetic flux density of approximately 0.072 Tesla; region 215 has a magnetic flux density of approximately 0.010 Tesla; and so on.

[0146] Figure 3A This is an example top view of an inductor device (inductor assembly) according to embodiments of this article.

[0147] This example embodiment illustrates a unique induction path arrangement in which four conductive paths are connected to a single phase of a switching power supply, such as a buck converter. In this example embodiment, because the four conductive paths (131, 132, 134, and 135) form a ring, in which each conductive path is spaced equidistant from each other and from the center 310, core utilization is higher and flux elimination is extended to a larger area at the core center of the inductor device 110.

[0148] Figure 3B The illustration is based on an embodiment of this document. Figure 3A An example diagram of magnetic flux density in an inductor device.

[0149] Figure 3B Figure 360 ​​in the figure shows the magnetic flux density across the cross section of the inductor device 110 (die), as indicated by cross section 350. For example, the magnetic flux density along this cross section in the core material 120 is approximately 0 between lengths BC, DE, and FG. Peak magnetic flux density occurs near positions B and G, gradually decreasing at a greater distance from the center 310.

[0150] The presence of four conductive paths 131, 132, 134, and 135 (instead of one or two conductive paths) allows for greater current flow, reducing the amount of peak magnetic flux. This simulation (of current through the conductive paths in inductor 110-1) assumes a shared output connection for two phases, with two conductive paths provided in each power supply phase. In this example embodiment, the effective inductance of each pair of conductive paths (such as 132 and 135 or 131 and 134) is approximately 33 nH, and the magnetic coupling coefficient is 0.34.

[0151] Figure 4 This is an example top view of an inductor device including multiple conduction paths (induction paths) according to embodiments of this article.

[0152] An embodiment of inductor device 110-2 includes 24 conductive paths (401, 402, ... 424).

[0153] The first concentric ring 441 of the conductive path (centered on center 310) includes conductive paths 401, 402, 403, 404, 405, 406, 407, 408, 409, 410, 411, 412, 413, 414, 415, and 416. The second concentric ring 442 of the conductive path (centered on center 310 and concentric with the first ring 421) includes conductive paths 417, 418, 419, 420, 421, 422, 423, and 424.

[0154] Conductive path group 451, including conductive paths 401, 402, 403, 404, 405, 406, 407, 408, 417, 418, 419, and 420, is connected in parallel. Conductive path group 452, including conductive paths 409, 410, 411, 412, 413, 414, 415, 416, 421, 422, 423, and 424, is connected in parallel.

[0155] In this example, each phase comprises 12 parallel-connected conductive paths (induction paths).

[0156] This embodiment is advantageous because the magnetic flux has been shaped so that more core regions undergo some form of flux cancellation, not only at the core center 310, but also between the conductive paths in the outer ring 421. Furthermore, the peak flux associated with inductor device 110-2 has been significantly reduced, thereby lowering core losses. A potential drawback of this embodiment is that the effective inductance becomes lower when more conductive paths are implemented in inductor device 110-2. In this case, the resulting inductance is approximately 9 nH for each group 451 and 452; the magnetic coupling coefficient between the first group 451 and the second group 452 is 0.27.

[0157] Figure 5 This is a top view illustrating multiple conduction paths in an inductor device according to an embodiment of this article.

[0158] Figure 5 An example of the inductor device 110-3 illustrates an arrangement in which 28 separate conductive paths are divided into a set of four different parallel-connected conductive paths (PH1, PH2, PH3, and PH4). In one embodiment, each conductive path in the inductor device 110-3 is a non-winding inductive path extending from a first end 141 of the inductor device to a second end, as previously discussed.

[0159] For example, phase PH1 includes (7) parallel-connected conductive paths 401, 402, 403, 404, 417, 418 and 425.

[0160] Phase PH2 includes (7) parallel-connected conductive paths 405, 406, 407, 408, 419, 420 and 426.

[0161] Phase PH3 includes (7) parallel-connected conductive paths 409, 410, 411, 412, 421, 422 and 427.

[0162] Phase PH4 includes (7) parallel-connected conductive paths 412, 413, 414, 415, 423, 424 and 428.

[0163] therefore, Figure 5 The inductor device 110-3 shown in the diagram has an arrangement of 28 separate conductive paths that travel from a first end 141 of the inductor device 110-3 through a core material 120 to a second end 142. The 28 conductive paths of the inductor device 110-3 are arranged in three concentric rings surrounding a center 310. These concentric rings include rings 561, 562, and 563.

[0164] As shown in the figure, the annulus 561 includes 16 conductive paths.

[0165] The 562 ring includes 8 conductive paths.

[0166] The 563 ring includes four conductive paths.

[0167] The implementation of inductor device 110-3 utilizes an entire core with very efficient flux cancellation. Furthermore, the peak flux is further reduced to 331 mT. Here, each phase has an effective inductance of approximately 15 nH. The magnetic coupling coefficient between phases is 0.32.

[0168] Figure 6 This is an example top view illustrating an arcuate conduction path in an inductor device according to an embodiment of this article.

[0169] The cylindrical conductive paths 131, 132, etc., discussed earlier are merely example embodiments; other shapes are also included in the embodiments described herein.

[0170] For example, due to flux shaping, the ring is particularly optimal in terms of handling maximum current and reducing peak flux, and has further optimizations. Figure 6 This is an example diagram of an open-loop design in which a single ring is cut in the middle into two semi-conductive path rings 621 and 622 (such as one conductive path per phase), each conductive path 621 and 622 handling half of the total current carried through the inductor device 110.

[0171] In this example embodiment, the core region within the ring (such as within conductive paths 621 and 622) experiences virtually no flux. However, the outer edges of conductive paths 621 and 622 experience very high peak flux densities. In one example embodiment, the inductance of the open ring 620 is 38 nH, and the coupling coefficient between conductive paths 621 and 622 is 0.57.

[0172] Therefore, in Figure 6 In one embodiment, manufacturing apparatus 140 manufactures an inductor device 110-4 as described herein to include a first open ring comprising a first bent metal material layer (such as conductive path 621) and a second bent metal material layer (such as conductive path 622).

[0173] First curved metal material layer (from) Figure 6 (Viewed from the top) The inductor device 110-4 has a first conductive path 621 that passes through the magnetic core material 120 and extends from the first end 141 of the inductor device 110-4 to the second end 142 of the inductor device 110-4.

[0174] Second curved metal material layer (from) Figure 6 (Viewed from the top) of the inductor device 110-4, the second conductive path 622 passes through the magnetic core material 120 and extends from the first end 141 of the inductor device 110-4 to the second end 142 of the inductor device 110-4.

[0175] Figure 7 This is an example top view illustrating an arcuate conduction path arranged in an inductor device according to an embodiment of this article.

[0176] This example embodiment includes a concentric structure comprising a first open circle (top view of conductive paths 721 and 722) and an open ring (top view of conductive paths 731 and 732).

[0177] In one embodiment, the conductive path of the semicircular ring and the semicircular conductive path on the upper or lower half are connected in parallel to form a phase. Thus, an inductor with two phases is obtained.

[0178] For example, one embodiment of this document includes connecting conductive paths 721 and 731 in parallel and connecting conductive paths 722 and 732 in parallel.

[0179] Therefore, in other embodiments, the manufacturing apparatus 140 manufactures the inductor device 110-5 to include a first conductive path 731 (a first bent metal material layer) and a second conductive path 732 (a second bent metal material layer), which extend from a first end 141 to a second end 142 of the inductor device 110-5 through the core material 120. As shown, the manufacturing apparatus 140 manufactures the first bent metal material layer (such as the first conductive path 731) and the second bent metal material layer (such as the second conductive path 732) as part of a second open material ring, which is concentrically disposed relative to an open cylinder including a conductive path 721 (a first half of the open cylinder) and a conductive path 722 (a second half of the open cylinder).

[0180] In this example embodiment, the peak flux is reduced while utilizing most of the core region. However, in a non-limiting example embodiment, the resulting per-phase inductance becomes very low at 13nH and the coupling coefficient is 0.73.

[0181] Figure 8A This is an example top view of an inductor device according to embodiments of this article.

[0182] The embodiments described herein may include analyzing flux density. Based on Ampere's law, this can be applied to... Figure 8A The inductor device yields the following equation:

[0183]

[0184]

[0185]

[0186]

[0187] Where α defines the inequality factor describing the decrease of the B-field with core segments; where I1 is the current through A1 (a conductive path made of a metal such as copper); where I2 is the current through A2 (a conductive path made of a metal such as copper); and where μ is the permeability of the core material 120. Furthermore, to derive the current in each copper segment, it is divided according to the total phase current of the copper area relative to the total copper area:

[0188]

[0189]

[0190] Where A totLet A1 be the total area (associated with conductive path 831) and A2 be the area (associated with conductive path 832), and let A2 be the area (associated with conductive path 832), wherein the current can be expressed as a function of the radius. In the following steps, this equation can be solved to determine the radius.

[0191] This design logic can be further used to push the inductance up to the desired value; this can be achieved by adjusting the thickness of the toroidal conductive path, increasing the number of toroids in the conductive path, etc.

[0192] Figure 8B The illustration is based on an embodiment of this document. Figure 8A An example diagram of flux density in an inductor device.

[0193] Figure 850 illustrates the magnetic flux density across the cross section 850 of inductor device 110-6. As shown in Figure 860, the magnetic flux density of inductor device 110-6 peaks near radius r1i and gradually decreases between r1i and r1o. The magnetic flux density of inductor device 110-6 peaks near radius r2i and gradually decreases between r2i and r2o.

[0194] Figure 9A This is an example diagram illustrating an arcuate conduction path (induction path) provided in an inductor device according to an embodiment of this article.

[0195] Inductor device 110-7 is an improved design in which the inductance per phase is 35 nH, while the magnetic flux density is equal for each conductive path (<400 mT). The core space in the center 310 between the open circles (conductive paths 941 and 942) is completely eliminated by flux, and the flux density in the core region between the rings (such as conductive paths 921, 922, 923, and 924) is significantly reduced. In this example embodiment, the magnetic coupling coefficient between the conductive paths is 0.74.

[0196] Therefore, further embodiments herein include fabricating the core material 120 of one or more conductive paths (such as conductive paths 941 and 942) in a cylindrical or semi-cylindrical shape. The core material 120 surrounds these conductive paths.

[0197] Therefore, in this embodiment, the manufacturing apparatus 140 manufactures the inductor device 110-7 to include a first set of conductive paths 921 and 922, which are configured to form a first discontinuous loop; each conductive path in the first set of conductive paths 921 and 922 extends from a first axial end of the inductor device 110-7 to a second axial end of the inductor device 110-7.

[0198] Manufacturing apparatus 140 further manufactures inductor device 110-7 to include a second set of conductive paths 931 and 932 disposed in a second discontinuous loop surrounding center 310. In a manner similar to that previously discussed, each conductive path of the second set of conductive paths 931 and 932 extends from a first axial end of inductor device 110-7 to a second axial end of inductor device 110-7. In one embodiment, the first discontinuous loop of conductive paths 921 and 922 is concentric with respect to the second discontinuous loop of conductive paths 931 and 932. Each conductive path of conductive paths 941 and 942 is semi-cylindrical.

[0199] Figure 9B The illustration is based on an embodiment of this document. Figure 9A An example diagram of magnetic flux density in an inductor device.

[0200] As shown in Figure 960, the magnitude of the magnetic flux density varies along the cross section 950 of the inductor device 110-7.

[0201] Figure 10A This is an example diagram illustrating an arcuate conduction path (induction path) provided in an inductor device according to an embodiment of this article.

[0202] like Figure 10A As shown, further improvements can be made by further reducing the peak flux and lowering the coupling factor. Figure 9A The inductor device 110-7 is described above. This is achieved by dividing it into open loops (arc conductive paths 1021, 1022, 1031, and 1032). Through inductor device 110-8, the peak flux is further reduced to below 340 mT while maintaining a similar per-phase inductance of 32 nH (as previously discussed with respect to inductor device 110-7), and the inter-phase coupling coefficient of inductor device 110-8 is also reduced to 0.57.

[0203] Therefore, in this example embodiment, the manufacturing apparatus 140 manufactures the inductor device 110-8 to include a first set of conductive paths 1021 and 1022 disposed in the inductor device 110-8 to form a first discontinuous loop (open loop); each conductive path in the first set of conductive paths 1021 and 1022 extends from a first end 141 of the inductor device 110-8 to a second end 142 of the inductor device 110-8.

[0204] Additionally, the manufacturing apparatus 140 manufactures the inductor device 110-8 to include a second set of conductive paths 1031 and 1032 disposed in the inductor device 110-8 to form a second discontinuous ring (open ring) concentric with the first ring (conductive paths 1021 and 1022); each conductive path in the second set of conductive paths 1031 and 1032 extends from a first axial end (141) of the inductor device 110-8 to a second axial end (142) of the inductor device 110-8.

[0205] In one embodiment, the first discontinuous loop of conductive paths 1021 and 1022 is concentric with respect to the second discontinuous loop of conductive paths 1031 and 1032.

[0206] The manufacturing apparatus 140 further manufactures the inductor device 110-8 to include conductive paths 1041 and 1042. Each of the conductive paths 1041 and 1042 extends from a first end 141 of the inductor device 110-8 to a second end 142 of the inductor device 110-8.

[0207] Figure 10B The illustration is based on an embodiment of this document. Figure 10A An example diagram of magnetic flux density in an inductor device.

[0208] As shown in Figure 1060, the magnitude of the magnetic flux density varies along the cross section 1050 of the inductor device 110-8.

[0209] Figure 11 This is an example diagram illustrating the logical and / or physical connectivity and corresponding magnetic coupling of multiple conduction paths according to embodiments of this document.

[0210] In this example embodiment, based on the implementation of inductor device 110-8, each of the conductive paths 1021, 1031, and 1041 is connected in parallel to create a single equivalent inductor La. Each of the conductive paths 1022, 1032, and 1042 is connected in parallel to create a single equivalent inductor Lb. The output terminal (second terminal 142) associated with inductors La and Lb is electrically connected.

[0211] The connection of one or more conductive paths can be achieved in any suitable manner. For example, the ends of the conductive paths in inductor device 110 can be made of wires, traces, metal sheets, etc.

[0212] Figure 12 This is an example diagram illustrating the connection of circuit components in a power supply according to an embodiment of this article.

[0213] In this non-limiting example embodiment, the power supply 1200 includes a controller 120 and multiple phases 221 and 222 that collectively generate a corresponding output voltage 123 (output current) to power a load 118. The load 118 can be any suitable circuit that can be located on a separate circuit board, such as a CPU (Central Processing Unit), a GPU, and an ASIC (such as an ASIC including one or more artificial intelligence accelerators), etc.

[0214] Note that power supply 1200 may include any number of phases. If needed, the phases can be divided such that a first phase 221 supplies power to the first load independently of the second phase supplying power to the second load.

[0215] As shown in an example embodiment where a combination of operating phases 221 and 222 is used to power the same load 118, phase 221 includes switch QA1, switch QB1, and sensing path 1231. Phase 222 includes switch QA2, switch QB2, and sensing path 1232.

[0216] Furthermore, in this example embodiment, voltage source 120-1 supplies voltage V1 (such as 6VDC or any suitable voltage) to a series combination of switch QA1 (such as a high-side switch) and switch QB1 (such as a low-side switch).

[0217] In one embodiment, the combination of switches QA1 and QB1 and the sensing path 1231 (conductive path) operate according to the buck converter topology to generate the output voltage 123.

[0218] Further in this example embodiment, it is noted that the drain node (D) of switch QA1 is connected to receive voltage V1 provided by voltage source 120-1. The source node (S) of switch QA1 is coupled to the drain node (D) of switch QA1 and the input node of sensing path 1231. The source node of switch QB1 is coupled to ground. The output node of sensing path 1231 is coupled to load 118.

[0219] Furthermore, in this example embodiment, the drain node of switch QA2 in phase 222 is connected to receive voltage V1 provided by voltage source 120-1. The source node (S) of switch QA2 is coupled to the drain node (D) of switch QB2 and the input node of sensing path 1232. The source node of switch QB2 is coupled to ground. The output node of sensing path 1232 is coupled to load 118.

[0220] As previously discussed, the combination of phases 221 and 222 produces an output voltage 123 that supplies power to load 118. That is, induction path 1231 produces output voltage 123; induction path 1232 produces output voltage 123.

[0221] During operation, as shown, controller 1240 generates control signals 105 (such as control signal A1 and control signal B1) to control the state of corresponding switches QA1 and QB1. For example, control signal A1 generated by controller 1240 drives and controls the gate node of switch QA1; control signal B1 generated by controller 1240 drives and controls the gate node of switch QB1.

[0222] Additionally, controller 1240 generates control signals A2 and B2 to control the states of switches QA2 and QB2. For example, control signal A2 generated by controller 1240 drives and controls the gate node of switch QA2; control signal B2 generated by controller 1240 drives and controls the gate node of switch QB2.

[0223] In one embodiment, controller 1240 controls phases 221 and 222 to have a 180-degree phase difference relative to each other.

[0224] As is known regarding buck converters, in phase 221, when switch QB1 is deactivated (OFF), the high-side switch QA1 is activated (ON), thereby coupling the input voltage V1 to the input of induction path 1231. This results in an increase in the amount of current supplied by induction path 1231 to load 118. Conversely, when switch QA1 is deactivated (OFF), the low-side switch QB1 is activated (ON), thereby coupling the ground reference voltage to the input of induction path 1231. This results in a decrease in the amount of current supplied by induction path 1231 to load 118. Controller 1240 monitors the amplitude of output voltage 123 and controls switches QA1 and QB1 to keep output voltage 123 within a desired voltage range.

[0225] In phase 222, similarly, when switch QB2 is deactivated (OFF), high-side switch QA2 is activated (ON), thereby coupling the input voltage V1 to the input of induction path 1232. This results in an increase in the amount of current supplied by induction path 1232 to load 118. Conversely, low-side switch QB2 is activated (ON) simultaneously with switch QA2 being deactivated (OFF), coupling the ground reference voltage to the input of induction path 1232. This results in a decrease in the amount of current supplied by induction path 1232 to load 118. Controller 1240 monitors the magnitude of output voltage 123 and controls switches QA2 and QB2 to keep output voltage 123 within the desired voltage range.

[0226] Figure 13 The illustration is a vertically stacked representation according to an embodiment of this document. Figure 12 Example side view of a multi-phase power supply.

[0227] In this example embodiment, power supply 1200 supports vertical power flow. For example, substrate 1205 and one or more corresponding power supplies, such as V1, supply power to power stack assembly 1300, which in turn supplies power to dynamic load 118. A ground reference (GND) carried through power stack assembly 1300 provides a reference voltage and a return path for the current carried to load 118 through the stack.

[0228] In one embodiment, substrate 1205 is a circuit board (such as a standalone board, a motherboard, a standalone board for coupling to a motherboard, etc.). A power stack assembly 1300 including one or more inductor devices is coupled to substrate 1205. As previously discussed, load 118 can be any suitable circuit, such as a CPU (Central Processing Unit), GPU, and ASIC (such as those including artificial intelligence accelerators), which can be located on a standalone circuit board.

[0229] Note that the inductor device in the power stack assembly 1300 can be exemplified in any suitable manner as described herein. In this non-limiting example embodiment, the power stack assembly 1300 includes Figure 1A The inductor device 110 is included. The power stack assembly 1300 can be configured to include any inductor device 110 as described herein.

[0230] Further in this example embodiment, the manufacturing apparatus 140 manufactures a power stack assembly 1300 (such as a DC-DC power converter) via a stack of multiple components, including a first power interface 1301, one or more switches in a switching layer 1310, a connectivity layer 1320, one or more inductor assemblies (such as including an inductor device 110), and a second power interface 1302.

[0231] The manufacturing apparatus 140 further provides a first power interface 1301 at the base of the stack (power stack assembly 1300 of the component). The base of the power stack assembly 1300 (such as the power interface 1301) couples the power stack assembly 1300 to the substrate 1205.

[0232] In one embodiment, the manufacturing apparatus 140 places capacitors 1221 and 1222 in a layer of the power stack assembly 1300 that includes the power interface 1301.

[0233] Furthermore, during the fabrication of the power stack assembly 1300, the fabrication apparatus 140 couples a plurality of switches, such as QA1, QB1, QA2, and QB2, in the power stack assembly 1300 to a first power interface 1301. The first power interface 1301 and its corresponding connection to the substrate 1205 enable the switches QA1, QB1, QA2, and QB2 to receive power inputs from the substrate 1205, such as an input voltage V1 and a GND reference voltage. One or more traces, power layers, etc., on the substrate 1205 supply or deliver voltage from a voltage source (or power supply) to the power interface 1301 of the power stack assembly 1300.

[0234] As previously discussed, controller 1240 generates control signals 105 to control corresponding switches QA1, QB1, QA2, and QB2 in power stack assembly 1300. Manufacturing apparatus 140 provides communication between controller 1240 and switches QA1, QB1, QA2, and QB2 in any suitable manner to deliver the corresponding signals 105.

[0235] At the top of the switches in the switch layer 1310, the manufacturing apparatus 140 further manufactures a power stack assembly 1300 to include one or more inductor devices as described herein. Furthermore, via the connection layer 1320, the manufacturing apparatus 140 further connects switches QA1, QB1, QA2, and QB2 to one or more inductor devices 110.

[0236] More specifically, in this example embodiment, the manufacturing apparatus 140 connects the source node (S) of switch QB1 to a ground reference node 1210-1 in the power interface 1301. Note that the ground reference node 1210-1 extends from the substrate 1205 to the dynamic load 118 via an L-shaped ground node 1210-1 (which is connected to a ground voltage reference). The manufacturing apparatus 140 connects the drain node (D) of switch QB1 to a node 1321 (such as one made of metal), which is electrically connected to the first end 141 of the induction path 1231 (such as an example of a conductive path 131). Thus, via the connecting layer 1320, the manufacturing apparatus connects the drain node of switch QB1 to the induction path 1231 of the inductor device 110.

[0237] Manufacturing apparatus 140 connects the drain node (D) of switch QA1 to the voltage source node 1220 of the first power interface 1301 (which is electrically connected to the input voltage V1). Manufacturing apparatus 140 connects the source node (S) of switch QA1 to node 1321, which, as previously discussed, is electrically connected to the first end 141 of the induction path 1231 (such as an example of conductive path 131). Thus, via the connecting layer 1320 and the corresponding node 1321, the source node of switch QA1 is connected to the induction path 1231 of inductor device 110.

[0238] As further shown, the manufacturing apparatus 140 connects the source node (S) of switch QB2 to a ground reference node 1210-2 in the power interface 1301. The ground reference node 1210-2 extends from the substrate 1205 to the dynamic load 118 via an L-shaped ground node 1210-2 (which is connected to a ground voltage reference). The manufacturing apparatus 140 connects the drain node (D) of switch QB2 to a node 1322 (such as one made of metal), which is electrically connected to the first end 141 of the induction path 1232 (such as an example of a conductive path 132). Thus, via the connecting layer 1320, the manufacturing apparatus connects the drain node of switch QB2 to the induction path 1232 of the inductor device 110.

[0239] Note that although each of nodes 1210-1 and 1210-2 appears to be L-shaped from the side view of the power stack assembly 1300, in one embodiment, node 1210 extends circumferentially around the outer surface of the power stack assembly 1300 in a manner similar to conductive path 133 as previously discussed.

[0240] As further shown, manufacturing apparatus 140 connects the drain node (D) of switch QA2 to voltage source node 1220 in power interface 1301 (which is electrically connected to input voltage V1). Manufacturing apparatus 140 connects the source node (S) of switch QA2 to node 1322, which is electrically connected to the first shaft end 141 of induction path 1232 (an example of conductive path 132). Thus, via the connecting layer 1320 and the corresponding node 1322, the source node of switch QA2 is connected to the induction path 1232 of inductor device 110.

[0241] Therefore, the manufacturing apparatus 140 places one or more switches (such as QA1, QB1, QA2 and QB2) in the power stack assembly 1300 between the first power interface 1301 and the inductor device 110.

[0242] In a non-limiting example embodiment, each of one or more switches QA1, QB1, QA2, and QB2 in the power stack assembly 1300 is a vertical field-effect transistor (VFET) disposed between the first power interface 1301 and the inductor device 110. However, it is additionally or alternatively noted that the one or more switches QA1, QB1, QA2, and QB2 can be any suitable type of switch, such as a vertical or lateral VFET, a bipolar junction transistor (BJT), etc. A lateral FET is also possible, but a vertical FET is ideal for this concept due to the flip-chip method of minimizing current loops.

[0243] As previously discussed, manufacturing apparatus 140 manufactures power stack assembly 1300 to include one or more inductor devices 110. In this example embodiment, the manufacturing apparatus arranges multiple sensing paths in the power stack assembly 1300 between multiple switches QA1, QB1, QA2, and QB2 and the second power interface 1302.

[0244] According to a further embodiment, it is noted that the fabrication of the plurality of sensing paths 1231 and 1232 includes: fabricating a plurality of sensing paths to include a first sensing path 1231 and a second sensing path 1232, the first sensing path 1231 and the second sensing path 1232 passing through the core material 120 of the inductor device 110 and extending between the communication layer 1320 and the power interface 1302. In one embodiment, the manufacturing apparatus 140 fabricates the inductor device 110 to include: i) a core material 120, the core material being a magnetically permeable ferromagnetic material; ii) a first sensing path 1231, the first sensing path 1231 passing through the core material 120 and extending from a first axial end of the inductor device 110 to a second axial end of the inductor device 110; iii) a second sensing path 1232, the second sensing path 1232 passing through the core material 120 and extending from a first axial end of the inductor device 110 to a second axial end of the inductor device 110.

[0245] Furthermore, in this example embodiment, the first sensing path 1231 is disposed in the first phase 221 of the power stack assembly 1300 (power converter circuit). Figure 12 In the second sensing path 1232, the second sensing path is set in the second phase 222 of the power stack assembly 1300 (power converter circuit). Figure 12 In the power converter (power stack assembly 1300), during operation, a combination of a first phase 221 and a second phase 222 arranged in parallel produces an output voltage 123. If necessary, a controller 1240 can also be manufactured into the power stack assembly 1300.

[0246] In one embodiment, each of the one or more sensing paths 1231 and 1232 is a corresponding non-winding path that extends from a first layer (such as switch layer 1310) in the stack, which includes multiple switches QA1, QB1, QA2 and QB2, to a second layer in the stack, which includes a second power interface 1302.

[0247] It is noted that further embodiments herein include connecting multiple induction paths in inductor device 110 in parallel to reduce the inductance of the respective induction paths. As described herein, any number of induction paths in inductor device 110 can be connected in parallel to provide a desired overall inductance. Therefore, in addition to controlling parameters such as the permeability of the core material 120 and the respective length (between the first end 141 and the second end 142) of each non-winding conductive path (such as a straight or direct path) in inductor device 110, embodiments herein further include connecting multiple induction paths in parallel to control the magnitude of the inductance provided by the respective inductor device 110.

[0248] As further shown, the manufacturing apparatus 140 places the inductor device 110 in the power stack assembly 1200 between a plurality of switches (QA1, QB1, QA2 and QB2) in the switch layer 1310 and the second power interface 1302.

[0249] More specifically, manufacturing apparatus 140 produces a power stack assembly 1300 to include a second power interface 1302. In one embodiment, manufacturing apparatus 140 connects the output shaft end of inductor device 110 and a corresponding node to the second power interface 1302. The second power interface 1302 is operable to receive an output voltage 123 generated by inductor device 110 and output the output voltage 123 to a load 118. Manufacturing apparatus 140 couples the output nodes of both induction paths 1231 and 1232 to an output voltage node 1331 (such as a layer of material, such as metal). Thus, output voltage node 1331 is electrically connected to the outputs of the respective induction paths 1231 and 1232.

[0250] In one embodiment, one or more nodes or pins, pads, etc. of the dynamic load 118 are coupled to the output voltage node 1331. For example, the output voltage node 1331 of the power stack assembly 1200 delivers the output voltage 123 generated by each of the sensing paths 1231 and 1232 to one or more nodes, pins, pads, etc. of the load 118.

[0251] Therefore, by switching the sensing path between the ground voltage and the input voltage V1, the combination of sensing paths 1231 and 1232 together generates the output voltage 123 to power the load 118.

[0252] As previously discussed, the power stack assembly 1300 further includes ground nodes 1210-1 and 1210-2 (such as an example of a third conductive path 133). In one embodiment, examples of conductive paths 133 of the inductor device 110 (such as ground nodes 1210-1, 1210-2, etc.) provide peripheral electromagnetic shielding relative to the power stack assembly 1300, preventing or reducing corresponding radiated emissions into the surrounding environment.

[0253] In other embodiments, the manufacturing apparatus 140 manufactures a first power interface 1301 to include a first contact element operable to connect the first power interface 1301 to a main substrate 1205 at a base of the power stack assembly 1300. The manufacturing apparatus manufactures a second power interface 1302 to include a second contact element operable to attach a dynamic load 118 to the power stack assembly 1300.

[0254] Note that the power stack assembly 1200 is manufactured to further include first capacitors 1221, 1222, etc., thereby providing connectivity between the input voltage node 1220 (a first conductive path for supplying the input voltage V1 to the power stack assembly 1300) and ground nodes 1210-1 and 1210-2 (such as second conductive paths for supplying a ground reference voltage to the power stack assembly 1300).

[0255] The manufacturing apparatus 140 further positions the output voltage node 1331 (such as another conductive path) in a layer of the power stack assembly 1302 that includes the second power interface 1302. As previously discussed, the output voltage node 1331 (such as a metal layer) is operable to deliver the output voltage 123 to the dynamic load 118.

[0256] According to a further embodiment, the manufacturing apparatus 140 manufactures a power supply stack assembly 1300 to include a second capacitor (1391, 1392, etc.) connected between an output voltage node 1331 and a corresponding ground node 1210. More specifically, capacitor 1391 is coupled between the output voltage node 1331 and ground node 1210-1; capacitor 1392 is coupled between the output voltage node 1331 and ground node 1210-2.

[0257] As previously discussed, node 1210 may be a continuous peripheral shield surrounding inductor device 110 and / or power stack assembly 1300.

[0258] A further embodiment of this document includes attaching a dynamic load 118 to a second power interface 1302. Thus, the dynamic load 118 is attached to the top of the power stack assembly 1300.

[0259] The power stacking assembly 1300 described herein (such as an assembly of vertically stacked components) offers advantages over conventional power converters. For example, the power stacking assembly 1300 described herein provides novel component connectivity (such as via stacking) within the assembly, which results in shorter circuit paths and lower losses when converting power and delivering power to the dynamic load 118.

[0260] As previously referenced Figure 12 During operation, the inductor device 110 and its corresponding induction paths 1231 and 1232 are operable to generate an output voltage 123 based on the received power (current supplied by the input voltage V1). In other words, the power stack assembly 1300 and the corresponding manufactured component stack (such as the first power interface 1301, one or more switches QA1, QB1, QA2 and QB2, the inductor device 110, and the second power interface 1302) are power converters operable to convert the input voltage V1 (such as a DC voltage) received at the first power interface 1301 into an output voltage 123 (such as a DC voltage) output from the second power interface 1302 to the dynamic load 110.

[0261] Further embodiments described herein include the fabrication of a system. For example, embodiments described herein include a fabrication apparatus 130. Fabrication apparatus 140 houses a substrate 1205, such as a circuit board; fabrication apparatus 140 attaches a base (such as an interface 1301) of a component stack (such as a power stack assembly 1300) to the circuit board. As previously discussed, the component stack (power stack assembly 1300) is operable to generate an output voltage 123 to power a load 118. The load 118 is attached to the circuit board, or the load 118 is attached to the top of the power stack assembly 1300.

[0262] Furthermore, as previously discussed, load 118 can be any suitable circuit, such as a CPU (Central Processing Unit), GPU, and ASIC (such as those ASICs that include artificial intelligence accelerators), which can be located on a separate circuit board.

[0263] Figure 14 This is an example diagram illustrating the connection of circuit components in a power supply according to an embodiment of this article.

[0264] In this example embodiment, the switching power supply phase 221 includes switch QA1, switch QB1, and induction path 151. Voltage source 120-1 supplies voltage V1 (such as 6VDC or any suitable voltage) to the series combination of switch QA1 (such as a high-side switch) and switch QB1 (such as a low-side switch).

[0265] In one embodiment, the combination of switches QA1 and QB1 and the sensing path 1431 (conductive path) constitute a buck converter.

[0266] As further illustrated in this example embodiment, the drain of switch QA1 is connected to receive voltage V1 supplied by voltage source 120-1. The source node (S) of switch QA1 is coupled to the drain node (D) of switch QB1 and the input node of sensing path 1431. The source node (S) of switch QB1 is coupled to ground. The output node of the sensing path is coupled to load 118.

[0267] During operation, controller 1440 generates control signals 111 (such as control signal A1 and control signal B1) to control switches QA1 and QB1. For example, control signal A1 generated by controller 1440 drives and controls the gate node (G) of switch QA1; control signal B1 generated by controller 1440 drives and controls the gate node (G) of switch QB1.

[0268] Further in this example embodiment, the ramp booster 122-1 (circuit) includes switches Q1, Q2, Q3 and Q4 configured as a full-bridge circuit.

[0269] Voltage source 120-2 supplies voltage V2 (such as 12VDC or any suitable voltage) to the full-bridge circuit of switches Q1, Q2, Q3, and Q4. A first series combination of switches Q1 and Q2 is arranged in parallel with a second series combination of switches Q3 and Q4.

[0270] The drain node (D) of switch Q1 is connected to receive voltage V2 supplied by voltage source 120-2. The source node (S) of switch Q1 is coupled to the drain node (D) of switch Q2 and the input node of an inductive device (such as conductive path 1432) (Ls). The source node (S) of switch Q2 is coupled to ground.

[0271] As further shown, the drain node (D) of switch Q3 is connected to receive the voltage V2 supplied by voltage source 120-2. The source node (S) of switch Q3 is coupled to the drain node (D) of switch Q4 and the output node of winding 152 (Ls). The source node (S) of switch Q4 is coupled to ground.

[0272] During operation, controller 1440 generates control signals 111 (such as control signals SIG1, SIG2, SIG3, and SIG4). Control signal SIG1 controls the gate (G) of switch Q1; control signal SIG2 controls the gate (G) of switch Q2; control signal SIG3 controls the gate (G) of switch Q3; and control signal SIG4 controls the gate (G) of switch Q4. A logic high voltage applied to the corresponding gate turns on the corresponding switch (the low-resistance path between the drain and source nodes). A logic low voltage applied to the corresponding gate turns off the corresponding switch (preventing current from flowing through the corresponding switch).

[0273] In this example embodiment, as previously discussed, circuit 122-1 (such as a ramp boost converter) is a full-bridge arrangement (such as a bridge configuration of switches Q1, Q2, Q3, and Q4) for both positive and negative di / dt (slope rise and fall) as discussed further herein, as well as for modulation of the current passing through induction path 151.

[0274] In one embodiment, when the sensing path 1431 must provide a rapid change in current (positive or negative) to the load 118 to keep the amplitude of the output voltage 123 within regulation, the controller 1240 can be configured to activate paired switches in the ramp-up circuit 122-1 to provide an appropriate amount of current to the dynamic load 118.

[0275] More specifically, to supplement the amount of current available from the sensing path 1431 by providing an increase in the output current to the dynamic load 118, the controller 1440: i) activates QA1 and deactivates switch QB1; ii) activates switches Q1 and Q4 and deactivates switches Q2 and Q3. The current 152 flowing through the sensing path 1432 generates magnetic flux (magnetic energy) coupled to the sensing path 1431, thereby increasing the corresponding output current supplied by the sensing path 1431 to the load 118.

[0276] Conversely, to provide a rapid reduction in the output current supplied to the dynamic load 118, controller 144: i) deactivates QA1 and activates switch QB1; ii) deactivates switches Q1 and Q4 and activates switches Q2 and Q3. The (negative) current 152 flowing through induction path 1432 results in the generation of magnetic flux (magnetic energy) coupled to induction path 1431, thereby reducing the corresponding output current supplied from induction path 1431 to the load 118. In other words, controller 1440 controls the switches in ramp-up transformer 122-1 to reduce the output current from the corresponding path 1431 to the load 118.

[0277] It should be further noted that embodiments herein include manufacturing the power supply 1400 as (e.g. Figure 15The power supply stack assembly shown includes multiple sensing paths, including a first sensing path 1431 and a second sensing path 1432: the first sensing path 1431 is positioned in the phase of the power converter, and the second sensing path 1432 is magnetically coupled to the first sensing path 1431 to apply magnetic energy regulation (providing voltage / current output boost and down capability) to the first sensing path 1431. In this example, the combination of phase 221 and inputs from the second sensing path 1432 (such as magnetic energy regulation, positive or negative) is operable to produce an adjustment of the output voltage 123 and to keep that adjustment within a desired range.

[0278] It is noted that additional details of the operational functions associated with the example power supply (ramp-up 122-1 and phase 221) are discussed in the related application filed in file number 2019P51049US, the entire teachings of which are incorporated herein by reference.

[0279] Figure 15 The illustration shows a support for vertical power flow according to an embodiment of this document. Figure 14 Example side view of the power supply.

[0280] The power stack assembly 1500 (associated with power supply 1400) in this example embodiment supports vertical power flow. For example, substrate 1205 and one or more corresponding power supplies such as V1 (voltage source 120-1) and V2 (voltage source 120-2) provide power to the power stack assembly 1500, which in turn powers the dynamic load 118.

[0281] The ground reference (GND) delivered or coupled through the power stack assembly 1500 provides a reference voltage and provides a return path for the current delivered to the load 118 through the power stack assembly 1500.

[0282] Note that the inductor device 110 in the power stack assembly 1500 can be exemplified in any suitable manner as described herein. In a non-limiting example embodiment, the power stack assembly 1500 includes Figure 10A The inductor device 110-8.

[0283] Further in this example embodiment, the manufacturing apparatus 140 manufactures a power stack assembly 1500 (such as a DC-DC power converter) via a stack of multiple components, including a first power interface 1501, one or more switches in a switching layer 1510, a connectivity layer 1520, one or more inductor assemblies (such as including inductor devices 110-8), and a second power interface 1502.

[0284] The manufacturing apparatus 140 further positions a first power interface 150 at the base of the stack (power stack assembly 1500 of the component). The base of the power stack assembly 1500 (such as the power interface 1501) couples the power stack assembly 1500 to the substrate 1205.

[0285] In one embodiment, the manufacturing apparatus 140 places a capacitor 1221 in a layer of the power stack assembly 1500 that includes a power interface 1501. The capacitor 1221 is disposed between a voltage V1 (1220) and a ground reference 1210-1.

[0286] Furthermore, in manufacturing the power stack assembly 1500, the manufacturing apparatus 140 electrically couples multiple switches, such as switches QA1, QB1, Q1, Q2, Q3 and Q4, in the power stack assembly 1500 to the first power interface 1501.

[0287] The first power interface 1501 and the corresponding connection to the substrate 1205 enable switches QA1, QB1, Q1, Q2, Q3, and Q4 to receive power from the substrate 1205, such as via input voltages V1, V2, and the GND reference voltage. One or more traces, power layers, etc. on the substrate 1205 supply or deliver voltage from a voltage source (or power supply) to the power interface 1501 of the power stack assembly 1500.

[0288] As previously discussed, controller 1240 generates control signals 105 to control corresponding switches QA1, QB1, Q1, Q2, Q3, and Q4 in the power stack assembly 1500. Manufacturing apparatus 140 provides communication between controller 1240 and switches QA1, QB1, Q1, Q2, Q3, and Q4 in any suitable manner for transmitting the corresponding signals 105.

[0289] As further shown, at the top of switches QA1, QB1, Q1, Q2, Q3, and Q4 in switch layer 1510, manufacturing apparatus 140 further manufactures power stack assembly 1500 to include one or more inductor devices (such as any example of inductor device 110) as described herein. Additionally, via communication layer 1520, manufacturing apparatus 140 further connects switches QA1, QB1, Q1, Q2, Q3, and Q4 to one or more inductor devices 110.

[0290] More specifically, in this example embodiment, the manufacturing apparatus 140 connects the source node (S) of switch QB1 to the ground reference node 1210-1 in the power interface 1501.

[0291] Note that ground reference node 1210-1 extends from substrate 1205 to dynamic load 118 via an L-shaped (viewed from the side) ground node 1210-1 (which is connected to a ground voltage reference). Fabrication apparatus 140 connects the drain node (D) of switch QB1 to node 1521 (such as that made of metal), which is electrically connected to induction paths 1431-1, 1431-2, and 1431-3 (these induction paths are collectively represented via parallel connections). Figure 14 The first end 141 of the sensing path 1431 in the middle.

[0292] Therefore, via the connecting layer 1320 and the corresponding node 1521, the manufacturing apparatus 140 connects the drain node of switch QB1 to the sensing path 1431 of inductor device 110-8 (parallel connection of sensing paths 1431-1, 1431-2 and 1431-3).

[0293] The manufacturing apparatus 140 additionally connects the drain node (D) of switch QA1 to the voltage source node 1220 of the first power interface 1501 (which is electrically connected to the input voltage V1). The manufacturing apparatus 140 connects the source node (S) of switch QA1 to node 1521, which, as previously discussed, is electrically connected to the first shaft end 141 of the induction path 1431 (a parallel connection of induction paths 1431-1, 1431-2, and 1431-3).

[0294] Therefore, via the connection layer 1520 and the corresponding node 1521, the source node of switch QA1 is also connected to the sensing path 1431 of inductor device 110.

[0295] As further shown, the manufacturing apparatus 140 connects the drain node (D) of switch Q1 to a node 1519 (such as one made of metal), which is electrically connected to the voltage source V2. The manufacturing apparatus 140 connects the source node (S) of switch Q1 to a node 1522 (metal or conductive path) in the connecting layer 1520.

[0296] Manufacturing apparatus 140 connects the source node (S) of switch Q2 to node 1210-2 (such as one made of metal), which is electrically connected to a ground reference voltage. Manufacturing apparatus 140 connects the drain node (D) of switch Q2 to node 1522 (metal or conductive path) in the connection layer 1520.

[0297] Therefore, via the connecting layer 1520 and the corresponding node 1522, the manufacturing apparatus 140 connects the source node of switch Q1 and the drain node of switch Q2 to the sensing path 1432 of the inductor device 110-8 (parallel connection of sensing paths 1432-1, 1432-2 and 1432-3).

[0298] The manufacturing apparatus 140 connects the drain node (D) of switch Q3 to node 1519 (such as one made of metal), which is electrically connected to voltage source V2. The manufacturing apparatus 140 connects the source node (S) of switch Q3 to node 1532 (metal or conductive path) extending from layer 1502 to connecting layer 1520.

[0299] The manufacturing apparatus 140 connects the source node (S) of switch Q4 to node 1210-3 (such as one made of metal), which is electrically connected to a ground reference voltage. The manufacturing apparatus 140 connects the drain node (D) of switch Q4 to node 1532 (a metal or conductive path) extending from layer 1502 to connecting layer 1520.

[0300] Therefore, via the connecting layer 1520 and the corresponding node 1532, the manufacturing apparatus 140 connects the source node of switch Q3 and the drain node of switch Q4 to the shaft end 142 of the sensing path 1432 (parallel connection of sensing paths 1432-1, 1432-2 and 1432-3) of the inductor device 110-8.

[0301] As further shown, ground reference node 1210-3 extends from substrate 1205 to dynamic load 118 via L-shaped (side view) ground reference node 1210-2 (which is connected to ground reference voltage).

[0302] It should be noted again that although each of nodes 1210-1 and 1210-3 appears to be L-shaped from the side view of the power stack assembly 1300, in one embodiment, node 1210 extends around the outer circumference of the power stack assembly 1500 in a manner similar to conductive path 133 as previously discussed.

[0303] Therefore, the manufacturing apparatus 140 places one or more switches (such as switches QA1, QB1, Q1, Q2, Q3 and Q4) in the power stack assembly 1500 between the first power interface 1301 and the inductor device 110.

[0304] In a non-limiting example embodiment, each of one or more switches QA1, QB1, Q1, Q2, Q3, and Q4 in the power stack assembly 1500 is a vertical field-effect transistor disposed between the first power interface 1501 and the inductor device 110-8. However, it is noted, additionally or alternatively, that one or more switches QA1, QB1, Q1, Q2, Q3, and Q4 can be any suitable type of switch, such as a horizontal field-effect transistor, a bipolar junction transistor, etc.

[0305] As previously discussed, manufacturing apparatus 140 manufactures power stack assembly 1500 to include one or more inductor devices 110. In this example embodiment, manufacturing apparatus 140 arranges multiple sensing paths 1431 in the power stack assembly 1500 between multiple switches QA1, QB1, Q1, Q2, Q3, and Q4 and the second power interface 1502.

[0306] Furthermore, in this example embodiment, the first sensing path 1431 (a parallel combination of 1431-1, 1431-2, and 1431-3) is disposed in the first phase 221 of the power stack assembly 1500 (power converter circuit). Figure 14 In the power supply stack assembly 1500 (power converter circuit), the second sensing path 1432 is set in the boost circuit 122-1 ( Figure 14 In the operation of this power converter (power stack assembly 1500), the combination of phase 221 and boost circuit 222 produces output voltage 123.

[0307] Note that, if necessary, the controller 1440 can also be manufactured into the power stack assembly 1500.

[0308] In one embodiment, each of the one or more sensing paths 1431 and 1432 is a corresponding unwinding path that extends from a first layer (such as switch layer 1510) of the power stack assembly 1500, which includes a plurality of switches QA1, QB1, Q1, Q2, Q3 and Q4, to a second layer of the power stack assembly 1500, which includes a second power interface 1502.

[0309] It should be noted that further embodiments herein include connecting multiple sensing paths 1431-1, 1431-2, and 1431-3 in inductor device 110-8 in parallel to reduce the inductance of the respective sensing paths. As described herein, any number of sensing paths in inductor device 110 can be connected in parallel to provide the desired overall inductance.

[0310] Therefore, in addition to controlling parameters such as the permeability of the core material 120 associated with inductor devices 110-8 and the corresponding length (between the first shaft end 141 and the second shaft end 142) of each non-winding conductive path (such as a straight or direct path) in inductor devices 110, embodiments herein further include connecting multiple induction paths in parallel to control the magnitude of the inductance provided by the respective inductor devices 110.

[0311] Manufacturing apparatus 140 produces a power stack assembly 1500 to include a second power interface 1502. In one embodiment, manufacturing apparatus 140 connects inductor devices 110-8 and corresponding nodes to the second power interface 1502. The second power interface 1502 (and corresponding node 1531) is operable to receive the output voltage 123 generated by the inductor devices 110 and output that output voltage to a load 118. Therefore, the output voltage node 1531 is electrically connected to the output of the corresponding induction path 1431.

[0312] In one embodiment, one or more nodes or pins, pads, etc. of the dynamic load 118 are coupled to the output voltage node 1531. For example, the output voltage node 1531 of the power stack assembly 1500 delivers the output voltage 123 generated by each sensing path 1431 to one or more nodes, pins, pads, etc. of the load 118.

[0313] Therefore, by switching the sensing path 1431 between the ground voltage and the input voltage V1, the combination of sensing paths 1431-1, 1431-2 and 1431-3 together generates an output voltage 123 to power the load 118 through node 1531.

[0314] In other embodiments, manufacturing apparatus 140 manufactures a first power interface 1501 to include a first contact element operable to connect the first power interface 1501 to a main substrate 1205 at a base of the power stack assembly 1500. Manufacturing apparatus 140 manufactures a second power interface 1502 to include a second contact element operable to attach a dynamic load 118 to a node 1531 of the power stack assembly 1500.

[0315] Note that the power stack assembly 1500 is manufactured to further include one or more capacitors 1231, thereby providing communication between the output voltage 123 and the ground reference voltage.

[0316] A further embodiment of this document includes attaching a dynamic load 118 to a second power interface 1502. Thus, the dynamic load 118 is attached to the top of the power stack assembly 1500.

[0317] The power stacking assembly 1500 described herein (such as an assembly of vertically stacked components) offers advantages over conventional power converters. For example, the power stacking assembly 1500 described herein provides novel component connectivity (such as via stacking) within the assembly, which results in shorter circuit paths and lower losses when converting power and delivering power to the dynamic load 118.

[0318] Figure 21 This is an example diagram illustrating a circuit assembly according to an embodiment of this article.

[0319] As shown in this example embodiment, circuit assembly 2100 includes power stack assembly 1300 or power stack assembly 1500 disposed in interposer layer 2110. Interposer layer 2110 provides circuit path connectivity between substrate 2190 and load substrate 2130 (and load 2120).

[0320] As previously discussed, the power stack assembly (1300 or 1500) receives an input voltage (and any other voltage reference signals such as ground and / or V1, V2, etc.) from the substrate 2190. The power stack assembly (1300 or 1500) converts the input voltage into an output voltage 123 (and / or output current) that powers the corresponding load 2120 and / or other circuit components disposed on the load substrate 2130.

[0321] In one embodiment, substrate 2190 is a printed circuit board (PCB) substrate, but substrate 2190 can be any suitable component that connects socket 2150 (optionally) or interposer 2110 to the substrate. Interposer 2110 communicates with substrate 2190 via insertion into socket 2150. In the absence of socket 2150, interposer 2110 is directly connected to substrate 2190.

[0322] Figure 22 This is an example diagram illustrating a circuit assembly according to an embodiment of this article.

[0323] As shown in this example embodiment, circuit assembly 2200 includes a power stack assembly 1300 or a power stack assembly 1500 disposed in CPU (Central Processing Unit) substrate 2210. In one embodiment, the power stack assembly is integrated into a laminate portion of the CPU substrate 2210 itself. CPU substrate 2210 provides circuit path connectivity between substrate 2290 and load 2220 (and other components connected to CPU substrate load 2120).

[0324] As previously discussed, the power stack assembly (1300 or 1500) receives an input voltage (and any other voltage reference signals such as ground and / or V1, V2, etc.) from the substrate 2290. The power stack assembly (1300 or 1500) converts this input voltage into an output voltage (and / or output current) to power the corresponding load 2220 and / or other circuit components disposed on the load CPU substrate 2210.

[0325] In one embodiment, substrate 2290 is a printed circuit board (PCB) substrate, but substrate 2290 can be a socket 2250 (optional) or any suitable component to which CPU substrate 2210 is connected. CPU substrate layer 2210 and power stack components communicate with substrate 2290 via insertion into socket 2250. In the absence of socket 2250, CPU substrate 2210 is directly connected to substrate 2290.

[0326] Figure 23 This is an example diagram illustrating a circuit assembly according to an embodiment of this article.

[0327] As shown in this example embodiment, circuit assembly 2300 includes power stack assembly 1300 or power stack assembly 1500 disposed in a substrate 2390 such as a circuit board (e.g., a printed circuit board).

[0328] In one embodiment, the power stack assembly is embedded or fabricated into an opening in the substrate 2390. In other words, in one embodiment, the power stack assembly 1300 or 1500 (converter unit) is fabricated (inserted) into an opening beneath the CPU substrate 2310. The CPU substrate 2310 provides a circuit path connection between the substrate 2390 and the load 2320 (and / or other components connected to the CPU substrate load 2310).

[0329] As previously discussed, the power stack assembly (1300 or 1500) receives an input voltage (and any other voltage reference signals such as ground and / or V1, V2, etc.) from the substrate 2390. The power stack assembly (1300 or 1500) converts the input voltage into an output voltage (and / or output current) that powers the corresponding load 2320 and / or other circuit components disposed on the load CPU substrate 2310.

[0330] In one embodiment, substrate 2390 is a printed circuit board (PCB) substrate, but substrate 2390 can be any suitable component that connects socket 2350 (optional) or CPU substrate 2310 to the substrate. CPU substrate 2310 communicates with substrate 2390 via insertion into socket 2350. In the absence of socket 2350, CPU substrate 2310 is directly connected to substrate 2390.

[0331] Figure 16 This is an example diagram illustrating a multi-stage power converter circuit and a corresponding bypass circuit according to embodiments of this document.

[0332] In this example embodiment, the voltage converter 1605 (such as a switch-loop converter or other suitable power converter circuit) derives an input voltage V12 based on the input voltage V11, such as via a step-down function. In one embodiment, the magnitude of the input voltage V11 is significantly greater than that of the voltage V12.

[0333] For example, as a non-limiting example embodiment, voltage V11 could be 6VDC, while input voltage V12 could be 1.5VDC. In one embodiment, controller 1240 controls switches in phases 221 and 222 to produce an output voltage 123 of 0.75VDC. Thus, in one embodiment, the intermediate bus voltage V12 (derived from the power input) is a fixed amplitude, approximately twice the amplitude of the output voltage 123.

[0334] Additionally, in one embodiment, the multiphase buck converter (phases 221, 222, etc.) operates with a duty cycle of approximately 50%, providing symmetrical performance for positive and negative load changes. The impedance of the load path is minimized. Inductors L1 and L2 essentially act as current sources flowing into load 118. The output capacitor C1 at load point 118 can be reduced or eliminated entirely.

[0335] Alternatively, according to a further embodiment, the power converter circuit 1605 (voltage divider) provides a voltage to the buck converter with an amplitude close to that of the output voltage 123. In this example, the buck converter (phases 221, 222) operates with a duty cycle of approximately 80%, which thus enables the current to slope down very effectively in power-up mode. In this case, a ramp-up converter (as described herein) can help to make the forward current slope up quickly and efficiently.

[0336] In other embodiments, the power converter circuit 1605 provides a voltage V2 close to the output voltage 123 amplitude to the buck converter, wherein the buck converter operates with a duty cycle between 0.5 and 1 under normal operation. In power boost mode, the power converter circuit 1605 is bypassed via the bypass circuit 1610. As discussed further below, the buck converter can operate directly on the intermediate bus voltage V11. In this example, a ramp-up function is not required.

[0337] More specifically, in one embodiment, depending on the load conditions, power supply 1600 (power supply 1200 plus bypass circuit 1610) is operable to generate a corresponding output voltage 123 based on one of two voltages V11 or V12.

[0338] For example, during non-transient conditions, such as when load 118 consumes a relatively constant amount of current supplied by output voltage 123, controller 1240 generates control signal BP1 to deactivate switch Q7; controller 1240 generates control signal BP2 to activate switch Q8. In this example, bypass circuit 1610 delivers voltage V12 to switches QA1 and QA2, in which conditional devices, phases 221 and 222 generate output voltages based on input voltage V12.

[0339] Conversely, during transient conditions, such as when load 118 suddenly draws on the overcurrent supplied by output voltage 123, controller 1240 generates control signal BP1 to activate switch Q7; controller 1240 generates control signal BP2 to deactivate switch Q8. In this example, bypass circuit 1610 delivers voltage V11 (a higher voltage than voltage V12) to switches QA1 and QA2, in which conditional devices, phases 221 and 222 generate output voltages based on input voltage V11.

[0340] Applying a higher voltage provides a faster circuit response.

[0341] Figure 17 This is an example diagram illustrating the first-stage power converter circuit and the corresponding bypass circuit according to an embodiment of this article.

[0342] In this example embodiment, the power supply 1700 includes a multi-phase converter controlled by a controller 1740. Switches QA1 and QA2 are controlled via the controller 1740 in a manner previously discussed to control the generation of output voltage 123 from sensing path 1431. Similarly, switches QA1 and QA2 are controlled via the controller 1740 to control the generation of output voltage 123 from sensing path 1433.

[0343] The power supply 1700 further includes a first boost circuit 122-1 and a second boost circuit 122-2. The first boost circuit controls the amplitude and direction of the current passing through the induction path 1432; the second boost circuit 122-2 controls the amplitude and direction of the current passing through the induction path 1434. Each of the boost circuits 122-1 and 122-2 is operable to apply current regulation to the corresponding induction path in a manner previously discussed, thereby maintaining the output voltage 123 within a desired range.

[0344] Figure 18 This is a diagram illustrating an example computer architecture operable to perform one or more methods according to embodiments of this document.

[0345] As previously discussed, any resources discussed herein (such as controller 1240, manufacturing apparatus 140, etc.) can be configured to include computer processor hardware and / or corresponding executable instructions to perform the various operations discussed herein.

[0346] As shown in the figure, the computer system 1800 of this example includes an interconnect 1811 that couples to a computer-readable storage medium 1812 of a non-transient medium type (which may be any suitable type of hardware storage medium in which digital information can be stored and retrieved), a processor 1813 (computer processor hardware), an I / O interface 1814, and a communication interface 1817.

[0347] Multiple I / O interfaces 1814 support connectivity with external hardware 1899 such as keyboards, displays, knowledge bases, etc.

[0348] The computer-readable storage medium 1812 can be any hardware storage device such as a memory, optical storage, hard disk, floppy disk, etc. In one embodiment, the computer-readable storage medium 1812 stores instructions and / or data.

[0349] As shown in the figure, the computer-readable storage medium 1812 can be encoded using manufacturing apparatus application 140-1 (e.g., including instructions) to perform any operation as discussed herein.

[0350] During operational embodiments, processor 1813 accesses computer-readable storage medium 1812 via interconnect 1811 to initiate, run, execute, interpret, or otherwise perform instructions in manufacturing apparatus application 140-1 stored on computer-readable storage medium 1812. Execution of manufacturing apparatus application 140-1 results in manufacturing apparatus processing 140-2 to perform any operations and / or processes as discussed herein.

[0351] Those skilled in the art will understand that the computer system 1800 may include other processors and / or software and hardware components, such as an operating system that controls the allocation and use of hardware resources to execute the manufacturing apparatus application 140-1.

[0352] Depending on the specific embodiments, it is noted that the computer system can reside in any variety of devices, including but not limited to power supplies, switched-capacitor converters, power converters, mobile computers, personal computer systems, wireless devices, wireless access points, base stations, telephone equipment, desktop computers, laptops, netbooks, mainframe computers, handheld computers, workstations, network computers, application servers, storage devices, consumer electronic devices (such as cameras, camcorders, set-top boxes, mobile devices, video game consoles, handheld video game devices), peripheral devices (such as switches, modems, routers, set-top boxes, content management devices, handheld remote control devices), any type of computing or electronic device, and so on. The computer system 1850 can be located anywhere or can be included in any suitable resource in any network environment to perform the functions discussed herein.

[0353] via Figure 19 and 20 The flowcharts below illustrate the functionality supported by one or more resources as described herein. Note that the steps in the following flowcharts can be performed in any suitable order.

[0354] Figure 19 This is a flowchart 1900 illustrating an example method according to an embodiment of this document. Note that there will be some overlap regarding the concepts discussed above.

[0355] In processing operation 1910, manufacturing apparatus 140 contains core material 120. The core material 120 is a magnetically conductive material.

[0356] In processing operation 1920, as further advancing the manufacturing of the inductor apparatus 110, the manufacturing device 1400 establishes one or more conductive paths in the core material 120. Each conductive path (such as 131, 132, etc.) extends (e.g., axially) through the core material 120 from a first axial end 141 (input end) of the inductor apparatus 110 to a second axial end 142 (output end) of the inductor apparatus 110. The core material 120 is operable to define a corresponding magnetic flux generated from the current flowing through each conductive path.

[0357] Figure 20 This is an example diagram illustrating method 2000 according to embodiments of this document. Note that there will be some overlap regarding the concepts discussed above.

[0358] In processing operation 2010, manufacturing apparatus 140 sets a first power interface on the base (first layer) of a stack (such as a power converter stack assembly of components).

[0359] In processing operation 2020, manufacturing apparatus 140 electrically couples multiple switches (located on the second layer of the stack) to the first power interface to receive power.

[0360] In processing operation 2030, manufacturing apparatus 140 electrically connects an inductor device (located on the third layer of the stack) to the plurality of switches, the inductor device being operable to generate an output voltage based on the received power.

[0361] In processing operation 2040, manufacturing apparatus 140 electrically connects a second power interface (located on the fourth layer of the stack) to the inductor device, the second power interface being operable to receive and output the output voltage generated by the inductor device.

[0362] It should be noted again that the techniques described herein are well-suited for use in inductor and power converter applications. However, it should be understood that the embodiments described herein are not limited to such applications, and the embodiments discussed herein are also well-suited for other applications.

[0363] While the invention has been specifically shown and described with reference to preferred embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Such changes are intended to be covered by the scope of the invention. Therefore, the foregoing description of embodiments of the invention is not intended to be limiting. Rather, any limitation on the invention is presented in the following claims.

Claims

1. An inductor device having a near end and a far end, the inductor device comprising: A magnetic core material, wherein the magnetic core material is magnetically permeable; as well as A first conductive path passes through the core material and extends from the proximal end of the inductor device to the distal end of the inductor device, the core material being operable to define a first magnetic flux generated from a first current flowing through the first conductive path; Second conductive path; as well as The first open material ring includes a first bent metal material layer and a second bent metal material layer, the first bent metal material layer being the first conductive path, and the second bent metal material layer being the second conductive path extending through the magnetic core material, the first open material ring extending from the proximal end of the inductor device to the distal end of the inductor device.

2. The inductor device of claim 1, wherein the second conductive path is spaced apart from the first conductive path, the second conductive path passes through the core material and extends from the proximal end of the inductor device to the distal end of the inductor device, the core material being operable to define a second magnetic flux generated from a second current flowing through the second conductive path.

3. The inductor device according to claim 2, further comprising: A third conductive path, extending from the proximal end of the inductor device to the distal end of the inductor device, is a return path operable to carry the first current and the second current.

4. The inductor device of claim 2, wherein the first conductive path and the second conductive path are connected in parallel.

5. The inductor device of claim 2, wherein the second conductive path is magnetically coupled to the first conductive path, and the flow of the second current through the second conductive path induces the flow of the current through the first conductive path.

6. The inductor device according to claim 1, wherein the inductive coupling coefficient between the first conductive path and the second conductive path is between 0.6 and 0.

95.

7. The inductor device of claim 3, wherein the third conductive path extends from the proximal end of the inductor device to the distal end of the inductor device, the third conductive path being a metal ring, and the first conductive path and the core material being located within the metal ring.

8. The inductor device of claim 1, wherein the core material has a permeability between 10 and 1000 Henry / meter.

9. The inductor device of claim 1, wherein the core material does not include any air gap.

10. The inductor device of claim 1, wherein the core material is operable to store magnetic energy associated with magnetic flux.

11. The inductor device according to claim 1, further comprising: A third curved metal material layer and a fourth curved metal material layer extend through the magnetic core material, wherein the third curved metal material layer is a third conductive path extending through the magnetic core material, and the fourth curved metal material layer is a fourth conductive path extending through the magnetic core material; and The third and fourth curved metal material layers are part of a second open material ring, which is concentrically arranged relative to the first open material ring.

12. The inductor device of claim 1, wherein the first conductive path is semi-circular.

13. The inductor device according to claim 1, further comprising: A first set of conductive paths is provided in a first ring, the first set of conductive paths including the first conductive path, each conductive path in the first set extending from the proximal end of the inductor device to the distal end of the inductor device; as well as A second set of conductive paths is provided in the second ring, each conductive path in the second set extending from the proximal end of the inductor device to the distal end of the inductor device.

14. A power supply system, comprising: Circuit board; The inductor device according to claim 1, wherein the inductor device is disposed in a power converter attached to the circuit board, the power converter being operable to generate an output voltage; as well as The load is attached to the circuit board and powered by the output voltage.

15. A method of manufacturing an inductor device, the method comprising: Contains a magnetic core material, said magnetic core material being magnetically permeable; and A first conductive path is provided in the magnetic core material, the first conductive path passing through the magnetic core material and extending from the proximal end of the inductor device to the distal end of the inductor device, the magnetic core material being operable to limit a first magnetic flux generated from a first current flowing through the first conductive path; The inductor device is manufactured to include a second conductive path; as well as A first open material ring is provided in the magnetic core material. The first open material ring includes a first bent metal material layer and a second bent metal material layer. The first bent metal material layer is a first conductive path, and the second bent metal material layer is a second conductive path extending through the magnetic core material. The first open material ring extends from the proximal end of the inductor device to the distal end of the inductor device.

16. The method of claim 15, further comprising: A second conductive path is provided in the core material, the second conductive path being spaced apart from the first conductive path, the second conductive path passing through the core material and extending from the proximal end of the inductor device to the distal end of the inductor device, the core material being operable to limit a second magnetic flux generated from a second current flowing through the second conductive path.

17. The method of claim 16, further comprising: A third conductive path is created, which extends from the proximal end of the inductor device to the distal end of the inductor device, and the third conductive path is an operable return path for carrying current.

18. The method of claim 16, further comprising: Connect the first conductive path and the second conductive path in parallel.

19. The method of claim 16, wherein the second conductive path is magnetically coupled to the first conductive path, and the flow of the second current through the second conductive path senses the flow of the current through the first conductive path.

20. The method of claim 15, further comprising: The first conductive path and the second conductive path are provided in the magnetic core material such that the inductive coupling coefficient between the first conductive path and the second conductive path is between 0.6 and 0.

95.

21. The method of claim 15, further comprising: A third conductive path is provided in the core material, the third conductive path extending from the proximal end of the inductor device to the distal end of the inductor device, the third conductive path being the perimeter of the metallic material, the perimeter comprising a combination of the first conductive path, the second conductive path, and the core material.

22. The method of claim 15, wherein the core material has a permeability between 10 and 1000 Henry / meter.

23. The method of claim 15, further comprising: The magnetic core of the inductor device is manufactured such that the magnetic core does not contain any air gap.

24. The method of claim 15, wherein the core material is operable to store magnetic energy associated with magnetic flux.

25. The method of claim 15, further comprising: A third bent metal material layer and a fourth bent metal material layer are provided in the magnetic core material. The third bent metal material layer is a third conductive path extending through the magnetic core material, and the fourth bent metal material layer is a fourth conductive path extending through the magnetic core material. and The third and fourth curved metal material layers are part of a second open material ring, which is concentrically arranged relative to the first open material ring.

26. The method of claim 15, further comprising: The first conductive path is manufactured in a semi-circular shape.

27. The method of claim 15, further comprising: A first set of conductive paths is provided in a first ring of the magnetic core material, the first set of conductive paths including the first conductive paths, each conductive path in the first set extending from the proximal end of the inductor device to the distal end of the inductor device; and A second set of conductive paths is provided in the second ring of the magnetic core material.

28. The method of claim 27, further comprising: The first ring is configured to be concentric with respect to the second ring.

29. A method of manufacturing a power supply system, comprising: To house the circuit board; A power converter is attached to the circuit board, the power converter including the inductor device according to claim 1, the power converter being operable to generate an output voltage for supplying power to a load attached to the circuit board.

30. A computer-readable storage hardware having instructions stored on the computer-readable storage hardware, the instructions causing the computer processor hardware, when executed by computer processor hardware, to: Contains a magnetic core material, wherein the magnetic core material is magnetically permeable; A first conductive path is provided in the magnetic core material, the first conductive path passing through the magnetic core material and extending from the proximal end of the inductor device to the distal end of the inductor device, the magnetic core material being operable to limit a first magnetic flux generated from the current flowing through the first conductive path; The inductor device is manufactured to include a second conductive path, and A first open material ring is provided in the magnetic core material. The first open material ring includes a first bent metal material layer and a second bent metal material layer. The first bent metal material layer is a first conductive path, and the second bent metal material layer is a second conductive path extending through the magnetic core material. The first open material ring extends from the proximal end of the inductor device to the distal end of the inductor device.

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