Information processing apparatus, information processing method, and computer-readable recording medium

Abstract

The present application provides an information processing device, an information processing method, and a computer readable recording medium, which can form a structure such as a film on a substrate with high precision. An example of the information processing device includes: a prediction unit configured to calculate a predicted film thickness when a substrate processing device processes a substrate based on a film thickness model and prior data, the film thickness model indicating a relationship between a state of the substrate processing device and a film thickness of a coating film formed on a surface of the substrate by the substrate processing device, and the prior data indicating a state of the substrate processing device before the substrate processing device processes the substrate; and an output unit configured to output instruction information related to processing of the substrate based on the predicted film thickness before the substrate processing device processes the substrate.

Description

Technical Field

[0001] This disclosure relates to an information processing apparatus, an information processing method, and a computer-readable recording medium. Background Technology

[0002] Patent document 1 discloses a method for calculating the film thickness of a film formed on a substrate based on a photographic image of the substrate surface.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-215193 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure describes an information processing apparatus, an information processing method, and a computer-readable recording medium capable of forming structures such as films on a substrate with high precision.

[0008] Solution for solving the problem

[0009] An example of an information processing apparatus includes: a prediction unit configured to calculate a predicted film thickness when a substrate processing apparatus processes a substrate based on a film thickness model and prior data, wherein the film thickness model represents the relationship between the state of the substrate processing apparatus and the film thickness of a coating film formed on the surface of the substrate by the substrate processing apparatus, and the prior data represents the state of the substrate processing apparatus before processing the substrate by the substrate processing apparatus; and an output unit that outputs instruction information related to the processing of the substrate based on the predicted film thickness before processing the substrate by the substrate processing apparatus.

[0010] The effects of the invention

[0011] According to the information processing apparatus, information processing method and computer-readable recording medium disclosed herein, it is possible to form structures such as films on a substrate with high precision. Attached Figure Description

[0012] Figure 1 This is a perspective view illustrating an example of a substrate processing system.

[0013] Figure 2 It is a summary representation Figure 1 A side view of the interior of the substrate processing system.

[0014] Figure 3 It is a summary representation Figure 1 A top view of the interior of the substrate processing system.

[0015] Figure 4 This is a side view that schematically represents an example of a liquid processing unit.

[0016] Figure 5 This is a top view that provides a general overview of an example of a heat treatment unit.

[0017] Figure 6 This is a block diagram illustrating an example of a substrate processing system.

[0018] Figure 7 This is a block diagram representing an example of a controller.

[0019] Figure 8 This is a schematic diagram illustrating an example of the hardware structure of a controller.

[0020] Figure 9 This is a flowchart illustrating an example of the process of forming a resist film on the surface of a substrate.

[0021] Figure 10 This is a flowchart illustrating an example of the process of forming a resist pattern on the surface of a substrate.

[0022] Figure 11 This is a block diagram representing other examples of controllers.

[0023] Figure 12 This is a block diagram representing other examples of controllers.

[0024] Figure 13 This is a block diagram representing other examples of controllers.

[0025] Figure 14 This is a block diagram representing other examples of controllers.

[0026] Figure 15 This is a block diagram representing other examples of controllers.

[0027] Explanation of reference numerals in the attached figures

[0028] 1: Substrate processing system; 2: Coating and developing apparatus (substrate processing apparatus); 3: Exposure apparatus; 11: Carrier (container); 16: Display (display device); 20: Substrate holding unit; Ctr: Controller (information processing device); C2: Processor (prediction unit, judgment unit, update unit, calculation unit, control unit); C3: Memory (storage unit); C4: Storage unit; M1: Storage unit; M11: Pre-data storage unit; M12: Post-data storage unit; M13: Film thickness measurement value storage unit; M14: Linewidth measurement value storage unit; M15: Film thickness model storage unit; M16: Linewidth model storage unit M2: Film thickness relationship processing unit; M21: Prediction unit; M22: Calculation unit; M23: Update unit; M24: Judgment unit; M25: Control unit; M3: Linewidth relationship processing unit; M31: Prediction unit; M32: Calculation unit; M33: Update unit; M34: Judgment unit; M35: Control unit; PM1~PM4: Processing modules; R: Resist film (coated film); RM: Recording medium; SE: Sensor unit (sensor); U1: Liquid processing unit (processing chamber); U2: Heat treatment unit (processing chamber); U3: Film thickness measurement unit (processing chamber); U4: Linewidth measurement unit (processing chamber); W: Substrate; Wa: Surface. Detailed Implementation

[0029] In the following description, the same tag is used for elements that are the same or have the same function, and repeated descriptions are omitted.

[0030] [Substrate Processing System]

[0031] First, refer to Figures 1-3 The structure of substrate processing system 1 will be described below. Substrate processing system 1 includes coating and developing apparatus 2 (substrate processing apparatus), exposure apparatus 3, and controller Ctr (information processing apparatus).

[0032] The exposure apparatus 3 is configured to receive and transmit the substrate W between itself and the coating and developing apparatus 2, and to process the surface Wa (refer to) formed on the substrate W. Figure 4 The resist film R (coated film) is exposed (pattern exposure). The exposure device 3 can selectively irradiate the exposed portion of the resist film R with energy rays by methods such as immersion exposure.

[0033] Energy rays can be categorized as either ionizing or non-ionizing radiation. Ionizing radiation possesses sufficient energy to ionize atoms or molecules. Examples of ionizing radiation include extreme ultraviolet (EUV), electron beams, ion beams, X-rays, alpha rays, beta rays, gamma rays, heavy particle beams, and proton beams. Non-ionizing radiation lacks sufficient energy to ionize atoms or molecules. Examples of non-ionizing radiation include gamma rays, i-rays, KrF excimer lasers, ArF excimer lasers, and F2 excimer lasers.

[0034] The coating and developing apparatus 2 is configured to form a resist film R on the surface Wa of the substrate W before exposure processing using the exposure apparatus 3. The coating and developing apparatus 2 is configured to perform a developing process on the resist film R after exposure processing.

[0035] The substrate W can be circular or polygonal, or any other shape besides a circle. The substrate W may have a cutout portion. This cutout portion can be, for example, a groove (U-shaped, V-shaped, etc.) or a straight section extending in a straight line (a so-called positioning plane). The substrate W can also be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the substrate W can be, for example, approximately 200 mm to 450 mm.

[0036] like Figures 1-3 As shown, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in a horizontal direction.

[0037] The carrier block 4 has a carrier station 12 and a loading / unloading section 13. The carrier station 12 supports a plurality of carriers 11 (receiving containers). The carriers 11 contain at least one substrate W in a sealed state. An opening and closing door (not shown) for inserting and removing the substrate W is provided on the side 11a of the carrier 11. The carrier 11 is mounted on the carrier station 12 with its side 11a facing the loading / unloading section 13.

[0038] The loading / unloading section 13 is located between the load-bearing station 12 and the processing block 5. For example... Figure 1 and Figure 3 As shown, the loading / unloading section 13 has multiple opening / closing doors 13a. When the carrier 11 is placed on the carrier station 12, the opening / closing doors of the carrier 11 are positioned facing the opening / closing doors 13a. By simultaneously opening the opening / closing doors 13a and the opening / closing doors on the side 11a, communication is established between the interior of the carrier 11 and the loading / unloading section 13. Figure 2 and Figure 3As shown, a conveying arm A1 is built into the infeed / outfeed section 13. The conveying arm A1 is configured to: remove the substrate W from the carrier 11 and transfer it to the processing block 5, receive the substrate W from the processing block 5 and return the substrate W to the carrier 11.

[0039] like Figure 2 As shown, the processing block 5 includes processing modules PM1 to PM4, film thickness measurement unit U3 (processing chamber), and linewidth measurement unit U4 (processing chamber).

[0040] The processing module PM1 is configured to form a lower film on the surface of the substrate W, and is also known as the BCT module. For example... Figure 3 As shown, the processing module PM1 includes a liquid treatment unit U1 (processing chamber), a heat treatment unit U2 (processing chamber), and a conveying arm A2 configured to transport a substrate W to these processing units. The liquid treatment unit U1 of the processing module PM1 may, for example, be configured to apply a coating liquid for forming a lower layer film to the substrate W. The heat treatment unit U2 of the processing module PM1 may, for example, be configured to perform a heat treatment that cures the coating film formed on the substrate W by the liquid treatment unit U1 to become a lower layer film. An example of a lower layer film is an anti-reflective (SiARC) film.

[0041] Processing module PM2 is configured to form an intermediate film (hard mask) on the lower film and is also called an HMCT module. Processing module PM2 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveyor arm A3 configured to transport the substrate W to these processing units. The liquid treatment unit U1 of processing module PM2 can be configured to, for example, coat the substrate W with a coating liquid for forming the intermediate film. The heat treatment unit U2 of processing module PM2 can be configured, for example, to perform a heat treatment to cure the coating film formed on the substrate W by the liquid treatment unit U1 to become an intermediate film. Examples of intermediate films include SOC (Spin On Carbon) films and amorphous carbon films.

[0042] Processing module PM3 is configured to form a thermosetting and photosensitive resist film R on an intermediate film, and is also called a COT module. Processing module PM3 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveyor arm A4 configured to transport a substrate W to these processing units. The liquid treatment unit U1 of processing module PM3 may, for example, be configured to apply a coating liquid for forming the resist film to the substrate W. The heat treatment unit U2 of processing module PM3 may, for example, be configured to perform a heat treatment (PAB (Pre Applied Bake)) to cure the coating film formed on the substrate W by the liquid treatment unit U1 to become the resist film R.

[0043] Processing module PM4, also known as the DEV module, is configured to perform development processing on the exposed resist film. Processing module PM4 includes a liquid treatment unit U1, a heat treatment unit U2, and a transport arm A5 configured to transport the substrate W to these processing units. The liquid treatment unit U1 of processing module PM4 can, for example, be configured to partially remove the resist film R to form a resist pattern (not shown). The heat treatment unit U2 of processing module PM4 can, for example, be configured to perform heat treatment before development (PEB (Post Exposure Bake)) and heat treatment after development (PB (Post Bake)).

[0044] Film thickness measurement unit U3 is configured to measure the thickness of the resist film R formed on the surface Wa of substrate W by processing module PM3. Linewidth measurement unit U4 is configured to measure the linewidth of the resist pattern formed on the surface Wa of substrate W by processing module PM4. Film thickness measurement unit U3 and linewidth measurement unit U4 can be integrated. That is, it can be configured to measure both film thickness and linewidth using a single unit. Film thickness measurement unit U3 can measure film thickness, for example, based on a camera image captured by a camera, or by irradiating with a laser, etc. Similarly, linewidth measurement unit U4 can also measure film thickness, for example, based on a camera image captured by a camera, or by irradiating with a laser, etc.

[0045] like Figure 2 and Figure 3 As shown, the processing block 5 includes a frame unit 14 located near the support block 4. The frame unit 14 extends in the vertical direction and includes multiple shelves arranged in the vertical direction. A transfer arm A6 is provided near the frame unit 14. The transfer arm A6 is configured to move the substrate W up and down between the shelves of the frame unit 14.

[0046] Processing block 5 includes a rack unit 14 located near interface block 6. The rack unit 14 extends vertically and includes multiple layers arranged vertically.

[0047] Interface block 6 has a built-in transfer arm A7 and is connected to exposure device 3. The transfer arm A7 is configured to: remove the substrate W from the holder unit 15 and transfer it to exposure device 3, and remove the substrate W from exposure device 3 and send it back to holder unit 15.

[0048] like Figures 1-3 As shown, a sensor unit SE (sensor) can be arranged inside or outside the coating and developing apparatus 2. For example... Figure 1 or Figure 2 As shown, the external sensor unit SE of the coating and developing apparatus 2 can also be installed on the outer wall surface of the coating and developing apparatus 2.

[0049] like Figure 2or Figure 3 As shown, the sensor unit SE inside the coating and developing apparatus 2 can be disposed in a location where the substrate W can be present. For example, the sensor unit SE can be disposed in the carrier 11, in the liquid treatment unit U1 of the processing modules PM1 to PM4, in the heat treatment unit U2 of the processing modules PM1 to PM4, in the compartments of the rack units 14 and 15, or on the transport path of the transport arms A1 to A7, etc., that transport the substrate W (i.e., outside of each unit U1 to U4, etc.).

[0050] The sensor unit SE may include, for example, at least one sensor selected from the group consisting of a temperature sensor, a humidity sensor, a pressure sensor, a wind speed sensor, a differential pressure sensor, a thermal imaging camera, and a viscosity sensor. The temperature sensor may be configured to measure the temperature of its surrounding environment. The humidity sensor may be configured to measure the relative humidity of its surrounding environment. The pressure sensor may be configured to measure the air pressure of its surrounding environment. The wind speed sensor may be configured to measure the wind speed of its surrounding environment. The differential pressure sensor may be configured to measure the pressure difference between the inside and outside of the coating and developing apparatus 2 (e.g., the pressure difference between the inside of each unit U1 to U4 and the outside of the coating and developing apparatus 2). The thermal imaging camera may, for example, be configured to measure the temperature distribution of the substrate W, the cooling plate 81 (described later) in the heat treatment unit U2, etc. The viscosity sensor may be configured to measure the viscosity of the resist used in the processing module PM3.

[0051] The coating and developing apparatus 2 also includes a display 16 (display device). The display 16 is configured to display various information on a screen. The information displayed on the display 16 may include, for example, the processing conditions of the substrate W (e.g., a pre-set process recipe, conditions calculated by the controller Ctr, etc.), the photographic image of the substrate W, the data acquired by the sensor unit SE (pre-process data, post-process data), the film thickness data measured by the film thickness measurement unit U3 (measured film thickness value), the linewidth data measured by the linewidth measurement unit U4 (measured linewidth value), and the analysis results of the controller Ctr on various data (e.g., predicted film thickness, predicted linewidth, film thickness model, linewidth model, etc., described later).

[0052] The controller Ctr is configured to partially or entirely control the coating and developing apparatus 2. Details of the controller Ctr will be described later. The controller Ctr can be configured to transmit and receive signals with the controller of the exposure apparatus 3, and to control the substrate processing system 1 as a whole by cooperating with the controller of the exposure apparatus 3.

[0053] [Liquid Treatment Unit]

[0054] Next, refer to Figure 4The liquid processing unit U1 will be described in further detail below. The liquid processing unit U1 includes a substrate holding part 20, a liquid supply part 30, a liquid supply part 40, a cover member 50, and a blower B.

[0055] The substrate holding section 20 includes a rotating section 21, a shaft 22, and a holding section 23. The rotating section 21 is configured to rotate the shaft 22 based on an action signal from the controller Ctr. The rotating section 21 is, for example, a power source such as an electric motor. The holding section 23 is provided at the front end of the shaft 22. The substrate W is disposed on the holding section 23. The holding section 23 is configured to hold the substrate W approximately horizontally, for example, by adsorbing it. That is, the substrate holding section 20 rotates the substrate W approximately horizontally about a central axis (rotation axis) perpendicular to the surface Wa of the substrate W. Inside the liquid processing unit U1, the sensor unit SE can be disposed above the substrate holding section 20.

[0056] The liquid supply unit 30 is configured to supply processing liquid L1 to the surface Wa of the substrate W. The processing liquid L1 of processing module PM1 can be, for example, a coating liquid for forming a lower layer film. The processing liquid L1 of processing module PM2 can be, for example, a coating liquid for forming an intermediate film. The processing liquid L1 of processing module PM3 can be, for example, a resist for forming a resist film R. The processing liquid L1 of processing module PM4 can be, for example, a developing solution. The resist material contained in the resist can be a positive resist material or a negative resist material. A positive resist material is a resist material that dissolves the exposed areas of the pattern while retaining the unexposed areas (light-shielding areas) of the pattern. A negative resist material is a resist material that dissolves the unexposed areas (light-shielding areas) of the pattern while retaining the exposed areas of the pattern.

[0057] The liquid supply unit 30 includes a supply mechanism 31 and a nozzle 32. The supply mechanism 31 is configured to deliver the processing liquid L1 stored in a container (not shown) via a pump or other liquid delivery mechanism (not shown) based on a signal from a controller Ctr. The supply mechanism 31 is also configured to move the nozzle 32 in both the vertical and horizontal directions based on a signal from the controller Ctr. The nozzle 32 is configured to spray the processing liquid L1 supplied by the supply mechanism 31 onto the surface Wa of the substrate W.

[0058] The liquid supply unit 40 is configured to supply a processing liquid L2 to the surface Wa of the substrate W. The processing liquid L2 of the processing module PM1 can be, for example, a solution (e.g., an organic solvent) for removing the peripheral portion of the lower film. The processing liquid L2 of the processing module PM2 can be, for example, a solution (e.g., an organic solvent) for removing the peripheral portion of the intermediate film. The processing liquid L2 of the processing module PM3 can be, for example, a solution (e.g., an organic solvent) for removing the peripheral portion of the resist film R, or a solution (e.g., an organic solvent) supplied to the surface Wa of the substrate W before applying the resist to improve the fluidity of the resist on the surface Wa of the substrate W. The processing liquid L2 of the processing module PM4 can be, for example, a rinsing solution.

[0059] The liquid supply unit 40 includes a supply mechanism 41 and a nozzle 42. The supply mechanism 41 is configured to deliver the processing liquid L2 stored in a container (not shown) via a pump or other liquid delivery mechanism (not shown) based on a signal from a controller Ctr. The supply mechanism 41 is also configured to move the nozzle 42 in both the vertical and horizontal directions based on a signal from the controller Ctr. The nozzle 42 is configured to spray the processing liquid L2 supplied from the supply mechanism 41 onto the surface Wa of the substrate W.

[0060] A cover member 50 is disposed around the substrate holding portion 20. The cover member 50 includes a main body 51, a drain port 52, and an exhaust port 53. The main body 51 is configured as a collection container for receiving processing liquids L1 and L2 supplied to the substrate W for processing the substrate W. The drain port 52 is disposed at the bottom of the main body 51 and is configured to discharge the drained liquid collected by the main body 51 to the outside of the liquid processing unit U1. The exhaust port 53 is disposed at the bottom of the main body 51 and is configured to discharge the downflow (sedimentation flow) flowing around the substrate W to the outside of the liquid processing unit U1.

[0061] Blower B is disposed above substrate holding portion 20 and cover member 50 in liquid treatment unit U1. Blower B is configured to generate a downward flow toward cover member 50 based on a signal from controller Ctr.

[0062] [Structure of the heat treatment unit]

[0063] Next, refer to Figure 5 The structure of the heat treatment unit U2 will be described below. The heat treatment unit U2 includes a heating section 70 for heating the substrate W and a cooling section 80 for cooling the substrate W within the housing 60. A loading / unloading outlet 61 for the substrate W is provided near the cooling section 80 in the housing 60. A sensor unit SE can be disposed near the loading / unloading outlet 61 within the housing 60. A differential pressure sensor in the sensor unit SE can be disposed on the side of the housing 60 opposite to the loading / unloading outlet 61.

[0064] The heating unit 70 includes a heating plate 71 and a lifting mechanism 72. The heating plate 71 is configured to heat a substrate W placed on its upper surface based on an instruction from a controller Ctr. The lifting mechanism 72 includes three lifting pins 72a, which are configured to move up and down based on an instruction from the controller Ctr. Each lifting pin 72a is inserted into a through hole 71a in the heating plate 71.

[0065] The cooling section 80 includes a cooling plate 81 and a lifting mechanism 82. The cooling plate 81 is configured to cool the substrate W placed on its upper surface based on an instruction from a controller Ctr. The cooling plate 81 is also configured to move between a position near the inlet / outlet 61 and a position near the hot plate 71 based on an instruction from the controller Ctr. The lifting mechanism 82 includes three lifting pins 82a, which are configured to move up and down based on an instruction from the controller Ctr. Each lifting pin 82a is inserted into a slit 81a provided in the cooling plate 81.

[0066] When the substrate W is moved into the heat treatment unit U2, the lifting mechanism 82 raises the lifting pin 82a so that its front end protrudes above the cooling plate 81. Then, when the substrate W, which has been moved into the housing 60, is placed on the front end of the lifting pin 82a, the lifting mechanism 82 lowers the lifting pin 82a below the cooling plate 81. This transfers the substrate W from the lifting pin 82a to the cooling plate 81.

[0067] Next, the cooling plate 81 moves above the hot plate 71. In this state, the lifting mechanism 72 raises the lifting pin 72a so that its front end protrudes above the cooling plate 81. This transfers the substrate W from the cooling plate 81 to the lifting pin 72a. Next, the cooling plate 81 moves to the vicinity of the loading / unloading outlet 61. In this state, the lifting mechanism 72 lowers the lifting pin 72a below the hot plate 71. This transfers the substrate W from the lifting pin 72a to the hot plate 71. When the substrate W is removed from the heat treatment unit U2, the reverse operation is performed.

[0068] [Controller Details]

[0069] Next, refer to Figures 6-8 To explain the details of the controller CTr. For example... Figure 6As shown, the controller Ctr includes a storage unit M1, a film thickness relationship processing unit M2, and a linewidth relationship processing unit M3 as functional modules. These functional modules are used for convenience to divide the functionality of the controller Ctr into multiple modules, and do not necessarily represent the hardware constituting the controller Ctr in such a modular way. Each functional module is not limited to being implemented by executing a program; it can also be implemented using dedicated circuits (e.g., logic circuits) or integrated circuits (ASICs) obtained by integrating dedicated circuits (e.g., logic circuits).

[0070] The storage unit M1 is configured to store various types of data. For example, the storage unit M1 can store programs read from a computer-readable recording medium RM, and setting data input by the operator via an external input device (not shown). This program can be configured to operate various parts of the coating and developing apparatus 2. The recording medium RM can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical-magnetic recording disk.

[0071] The storage unit M1 may include a pre-data storage unit M11, a post-data storage unit M12, a film thickness measurement value storage unit M13, a linewidth measurement value storage unit M14, a film thickness model storage unit M15, and a linewidth model storage unit M16, which are functional modules.

[0072] The pre-processing data storage unit M11 can be configured to store data measured by the sensor unit SE at a time point before the substrate W is processed, as pre-processing data. For example, the pre-processing data storage unit M11 can be configured to store data measured by the sensor unit SE at a time point when the carrier 11 containing the substrate W is placed on the carrier station 12 of the coating and developing apparatus 2, as pre-processing data.

[0073] The post-processing data storage unit M12 can be configured to store data measured by the sensor unit SE at a time point after the substrate W has been processed, as post-processing data. For example, the post-processing data storage unit M12 can be configured to store data measured by the sensor unit SE at a time point after the substrate W has been liquid-processed by the liquid processing unit U1, as post-processing data after liquid processing. Liquid processing includes, for example, the time point after a resist film R is formed on the surface Wa of the substrate W, and the time point after the resist film R has been developed and a resist pattern has been formed on the surface Wa of the substrate W. The post-processing data storage unit M12 can also be configured to store data measured by the sensor unit SE at a time point after the substrate W has been heat-processed by the heat processing unit U2, as post-processing data after heat processing.

[0074] The film thickness measurement storage unit M13 can be configured to store the film thickness of the resist film R measured by the film thickness measurement unit U3. The linewidth measurement storage unit M14 can be configured to store the linewidth of the resist pattern measured by the linewidth measurement unit U4.

[0075] The film thickness model storage unit M15 can be configured to store a film thickness model that represents the relationship between the state of the coating and developing apparatus 2 and the predicted value (predicted film thickness) of the resist film R formed on the surface Wa of the substrate W by the coating and developing apparatus 2. The film thickness model can be, for example, an empirical model obtained by processing the substrate W under different processing conditions to obtain the film thickness of multiple resist films R, a physical model obtained by computer simulation, or a model obtained by combining these models. Alternatively, the film thickness model can be a model generated by machine learning based on learning data, which accumulates records corresponding to the state of the coating and developing apparatus 2 and the film thickness of the resist film R formed on the surface Wa of the substrate W by the coating and developing apparatus 2. An example of a film thickness model includes a multiple regression equation generated by multiple regression analysis. Regarding the multiple regression equation for film thickness, the parameters y, a1 to a2 are used... k α1~α k When , e, and k are set to the following parameters, they can be defined using Equation 1.

[0076] y: Target variable (predicted membrane thickness)

[0077] a1~a k Explanatory variable (processing conditions of substrate W)

[0078] α1~α k Partial regression coefficient

[0079] e: Error

[0080] k: Natural numbers greater than 2

[0081] y = α1·a1 + α2·a2 + ... + α k ·a k +e...(1)

[0082] The linewidth model storage unit M16 can be configured to store a linewidth model that represents the relationship between the state of the coating and developing apparatus 2 and the predicted value (predicted linewidth) of the resist pattern formed on the surface Wa of the substrate W by the coating and developing apparatus 2. The linewidth model can be, for example, an empirical model obtained by processing the substrate W under different processing conditions to obtain the linewidths of multiple resist patterns, a physical model obtained by simulation on a computer, or a model obtained by combining these models. Alternatively, the linewidth model can be a model generated by machine learning based on learning data, which accumulates records corresponding to the state of the coating and developing apparatus 2 and the linewidth of the resist pattern formed on the surface Wa of the substrate W by the coating and developing apparatus 2. An example of a linewidth model includes a multiple regression equation generated by multiple regression analysis. Regarding the multiple regression equation for linewidth, the parameters z, b1~b1 are used... m β1~β m When f and m are set to the following parameters, they can be defined using Equation 2.

[0083] z: Target variable (prediction line width)

[0084] b1~b m Explanatory variable (processing conditions of substrate W)

[0085] β1~β m Partial regression coefficient

[0086] f: Error

[0087] m: a natural number greater than 2

[0088] z =β1.b1+β2.b2+...+β k .b k +f...(2)

[0089] Partial regression coefficients α1~α k It may include at least one value selected from the group consisting of: a value corresponding to the temperature of the surrounding environment where the substrate W is processed; a value corresponding to the relative humidity of the surrounding environment where the substrate W is processed; a value corresponding to the air pressure of the surrounding environment where the substrate W is processed; a value corresponding to the wind speed of the surrounding environment where the substrate W is processed; a value corresponding to the viscosity of the resist applied to the substrate W; a value corresponding to the type of organic solvent supplied to the substrate W; a value corresponding to the temperature distribution of the substrate W; a value corresponding to the air pressure difference between the surrounding environment where the substrate W is processed and the outside of the coating and developing apparatus 2; and a value corresponding to the structure of the cover member 50. Partial regression coefficients β1 to β2 k The same applies.

[0090] The film thickness processing unit M2 is configured to perform processing based on various data stored in the storage unit M1 to form a resist film R of a specified thickness on the surface Wa of the substrate W to be processed subsequently. For example... Figure 6 and Figure 7 As shown, the film thickness relationship processing unit M2 includes a prediction unit M21, an output unit M20, an update unit M23, and a control unit M25.

[0091] like Figure 7 As shown, the prediction unit M21 is configured to calculate the predicted film thickness y of the resist film R formed on the surface Wa of the substrate W to be processed thereafter, based on the prior data stored in the prior data storage unit M11 and the film thickness model (Equation 1) stored in the film thickness model storage unit M15.

[0092] Before the substrate W is processed by the coating and developing apparatus 2, the output unit M20 outputs instruction information related to the processing of the substrate W based on the predicted film thickness y. For example, the output unit M20 includes a calculation unit M22 and a judgment unit M24.

[0093] The calculation unit M22 is configured to calculate the processing conditions suitable for obtaining the predicted film thickness y of the substrate W based on the predicted film thickness y calculated by the prediction unit M21. These processing conditions are an example of the aforementioned indication information. For example, the processing conditions could be the rotational speed at which the substrate W is rotated by the substrate holding unit 20 in the liquid treatment unit U1 of the processing module PM3. There is a predetermined correlation between the rotational speed of the substrate W and the film thickness R of the resist film obtained based on this rotational speed; therefore, the formula for this correlation can be experimentally determined in advance. The calculation unit M22 can calculate the rotational speed of the substrate W to be processed subsequently by applying the predicted film thickness y to this formula.

[0094] The determination unit M24 is configured to output indication information (hereinafter referred to as "continuation permission information") indicating whether to continue processing of the substrate W based on the predicted film thickness y calculated by the prediction unit M21. For example, the determination unit M24 may output the continuation permission information based on whether the predicted film thickness y calculated by the prediction unit M21 is within a predetermined design value range. Figure 6 As shown, the determination unit M24 can be configured to display a continuing / cancellation information on the display 16.

[0095] The update unit M23 is configured to update the film thickness model stored in the film thickness model storage unit M15 based on the post-event data stored in the post-event data storage unit M12 and the measured film thickness values ​​stored in the film thickness measurement value storage unit M13. For example, the update unit M23 is configured to also consider the post-event data and the measured film thickness values ​​to recalculate the partial regression coefficients α1 to α2. kThe updated film thickness model is stored in the film thickness model storage unit M15. When updating the film thickness model, the updating unit M23 can also use the processing conditions calculated by the calculation unit M22.

[0096] like Figure 6 and Figure 7 As shown, the control unit M25 is configured to control the coating and developing apparatus 2 based on the processing conditions calculated by the calculation unit M22. For example, the control unit M25 can control the substrate holding unit 20 in the liquid treatment unit U1 to rotate the substrate W at a rotational speed calculated by the calculation unit M22. Furthermore, the aforementioned determination unit M24 can output a continue / cancellation information to the control unit M25. If the continue / cancellation information output from the determination unit M24 to the control unit M25 indicates that continue is not possible, the control unit M25 can control the coating and developing apparatus 2 to stop the processing of the substrate W.

[0097] The linewidth relationship processing unit M3 is configured to perform processing based on various data stored in the storage unit M1 to form a resist pattern of a specified linewidth on the surface Wa of the substrate W to be processed subsequently. For example... Figure 6 and Figure 7 As shown, the linewidth relationship processing unit M3 includes a prediction unit M31, an output unit M30, an update unit M33, and a control unit M35.

[0098] like Figure 7 As shown, the prediction unit M31 is configured to calculate the predicted linewidth z of the resist pattern formed on the surface Wa of the substrate W to be processed thereafter, based on the prior data stored in the prior data storage unit M11 and the linewidth model (Equation 2) stored in the linewidth model storage unit M16. When calculating the predicted linewidth z, the prediction unit M31 may also use the measured film thickness values ​​stored in the film thickness measurement value storage unit M13.

[0099] Before the substrate W is processed by the coating and developing apparatus 2, the output unit M20 outputs instruction information related to the processing of the substrate W based on the predicted linewidth z. For example, the output unit M30 includes a calculation unit M32 and a judgment unit M34.

[0100] The calculation unit M32 is configured to calculate the processing conditions suitable for obtaining the predicted linewidth z of the substrate W based on the predicted linewidth z calculated by the prediction unit M31. These processing conditions are an example of the aforementioned indication information. For example, the processing conditions could be the temperature of the heat treatment (PEB) in the heat treatment unit U2 of the processing module PM4. There is a predetermined correlation between the PEB temperature and the linewidth of the resist pattern obtained at that temperature, and therefore, the formula for this correlation can be experimentally determined in advance. The calculation unit M32 calculates the PEB temperature of the substrate W to be processed subsequently by applying the predicted linewidth z to this formula.

[0101] The determination unit M34 is configured to output indication information (hereinafter referred to as "continuation permission information") indicating whether to continue processing of the substrate W based on the predicted linewidth z calculated by the prediction unit M31. For example, the determination unit M34 may output the continuation permission information based on whether the predicted linewidth z calculated by the prediction unit M31 is within a predetermined design value range. Figure 6 As shown, the determination unit M34 can be configured to display a continuing / cancellation information on the display 16.

[0102] The update unit M33 is configured to update the linewidth model stored in the linewidth model storage unit M16 based on the post-event data stored in the post-event data storage unit M12 and the measured linewidth values ​​stored in the linewidth measurement value storage unit M14. For example, the update unit M33 is configured to also consider the post-event data and the measured linewidth values ​​to recalculate the partial regression coefficients β1 to β2. m The updated linewidth model is stored in the linewidth model storage unit M16. When updating the linewidth model, the updating unit M33 may also use the processing conditions calculated by the calculation unit M32, or the measured film thickness value stored in the film thickness model storage unit M15.

[0103] like Figure 6 and Figure 7 As shown, the control unit M35 is configured to control the coating and developing apparatus 2 based on the processing conditions calculated by the calculation unit M32. For example, the control unit M35 can control the hot plate 71 in the heat treatment unit U2 to heat treat the substrate W at the temperature of PEB calculated by the calculation unit M32. Furthermore, the aforementioned determination unit M34 can output a continue / cancellation information to the control unit M35. If the continue / cancellation information output from the determination unit M34 to the control unit M35 indicates that continue is not possible, the control unit M35 can control the coating and developing apparatus 2 to stop the processing of the substrate W.

[0104] The hardware of the controller Ctr can, for example, consist of one or more control computers. Figure 8 As shown, the controller Ctr includes a circuit C1 as part of the hardware structure. Circuit C1 can be composed of circuit elements. Circuit C1 may include a processor C2 (prediction unit, judgment unit, update unit, calculation unit, control unit), a memory C3 (storage unit), a storage unit C4 (storage unit), a driver C5, and an input / output port C6.

[0105] The processor C2 cooperates with at least one of the memory C3 and storage unit C4 to execute the program, and performs signal input and output via the input / output port C6, thereby constituting the aforementioned functional modules. The memory C3 and storage unit C4 operate as the storage unit M1. The driver C5 is a circuit that drives various devices of the coating and developing apparatus 2. The input / output port C6 is used to input and output signals between the driver C5 and various devices of the coating and developing apparatus 2 (e.g., liquid treatment unit U1, heat treatment unit U2, film thickness measurement unit U3, linewidth measurement unit U4, display 16, sensor unit SE, etc.).

[0106] The substrate processing system 1 may have a single controller Ctr or a controller group (control unit) composed of multiple controller Ctrs. When the substrate processing system 1 has a controller group, the aforementioned functional modules can be implemented by a single controller Ctr or by a combination of two or more controller Ctrs. When the controller Ctr is composed of multiple computers (circuits C1), the aforementioned functional modules can be implemented by a single computer (circuit C1) or by a combination of two or more computers (circuit C1s). The controller Ctr may have multiple processors C2. In this case, the aforementioned functional modules can be implemented by a single processor C2 or by a combination of two or more processors C2. A portion of the functionality of the controller Ctr of the substrate processing system 1 can be housed in a separate device from the substrate processing system 1 and connected to the substrate processing system 1 via a network to implement various operations of this embodiment. For example, if the functions of the processors C2, memory C3, and storage units C4 of multiple substrate processing systems 1 are uniformly implemented by one or more other devices, the information and operations of multiple substrate processing systems 1 can be remotely and uniformly managed and controlled.

[0107] [Resist film formation treatment]

[0108] Next, refer to Figure 7 and Figure 9 This describes a method for forming a resist film R on the surface Wa of a substrate W.

[0109] First, when processing of the substrate W begins, at least one sensor unit SE, located inside and outside the coating and developing apparatus 2, measures data and transmits this data to the pre-data storage unit M11. Thus, the pre-data storage unit M11 acquires the pre-data ( Figure 9 Step S11). The timing for acquiring the prior data can be any timing from when the carrier 11, which houses the substrate W to be formed with resist film, is placed on the carrier station 12 until the resist liquid is supplied to the surface Wa of the substrate W.

[0110] Next, the prediction unit M21 calculates the predicted film thickness y of the resist film R based on the prior data stored in the prior data storage unit M11 and the film thickness model (Equation 1) stored in the film thickness model storage unit M15. Figure 9 Step S12). Next, the determination unit M24 outputs the above-mentioned continuation permission information to the control unit M25 based on the predicted film thickness y output from the prediction unit M21, indicating whether to continue processing the substrate W to be targeted. Figure 9 Step S13). If the "can continue?" message indicates that continuing is not possible (in...) Figure 9 If step S13 is "No", the control unit M25 stops the coating and developing apparatus 2. As a result, no resist film R is formed on the substrate W, and the process ends.

[0111] On the other hand, in the case of whether the information can continue to indicate whether it can continue (in Figure 9 In step S13 (if "Yes"), the calculation unit M22 calculates the processing conditions (rotation speed) of the substrate W to be targeted based on the predicted film thickness y calculated by the prediction unit M21. Figure 9 Step S14). Next, the control unit M25 controls the liquid treatment unit U1 of the processing module PM3 based on the processing conditions calculated by the calculation unit M22. As a result, a resist film R of a predetermined thickness (the thickness corresponding to the predicted film thickness y) is formed on the surface Wa of the substrate W to be targeted. Figure 9 Step S15).

[0112] Next, at least one sensor unit SE installed inside and outside the coating and developing apparatus 2 measures the data and sends the data to the post-processing data storage unit M12. Thus, the post-processing data storage unit M12 acquires the post-processing data. Figure 9 (Step S16). The timing for acquiring the post-processing data can be any timing from the time immediately following the formation of the resist film R on the surface Wa of the substrate W to the time when the substrate W is subjected to the next process.

[0113] Next, the thickness of the resist film R formed on the surface Wa of the substrate W (the object) is measured using the film thickness measurement unit U3. Figure 9 Step S17). The film thickness data (measured film thickness value) of the resist film R measured by the film thickness measurement unit U3 is stored in the film thickness measurement value storage unit M13. In addition, steps S16 and S17 can be executed in parallel, or step S17 can be executed before step S16.

[0114] Next, the update unit M23 updates the partial regression coefficients α1 to α2 of the film thickness model stored in the film thickness model storage unit M15 based on the post-event data stored in the post-event data storage unit M12 and the measured film thickness values ​​stored in the measured film thickness value storage unit M13.k ( Figure 9 (Step S18). Therefore, the updated film thickness model is used when processing the subsequent substrate W. Through the above process, the formation of the resist film R for a substrate W is completed.

[0115] [Forming and processing of resist patterns]

[0116] Next, according to Figure 7 and Figure 10 This describes a method for forming a resist pattern on the surface Wa of a substrate W.

[0117] First, when processing of the substrate W begins, at least one sensor unit SE, located inside and outside the coating and developing apparatus 2, measures data and sends this data to the pre-data storage unit M11. Thus, the pre-data storage unit M11 acquires the pre-data ( Figure 10 Step S21). The timing for acquiring the prior data can be any timing from when the carrier 11, which houses the substrate W to be subjected to the resist pattern formation process, is placed on the carrier station 12 until the developer is supplied to the resist film R on the surface Wa of the substrate W.

[0118] Next, the thickness of the resist film R formed on the surface Wa of the substrate W is measured using the film thickness measurement unit U3. Figure 10 Step S22). The film thickness data (measured film thickness value) of the resist film R measured by the film thickness measurement unit U3 is stored in the film thickness measurement value storage unit M13. Alternatively, instead of measuring the film thickness value anew, data already measured about the substrate W to which the resist pattern is to be formed can be used (via...). Figure 9 (Data measured in step S17).

[0119] Next, the prediction unit M31 calculates the predicted linewidth z of the resist pattern based on the prior data stored in the prior data storage unit M11, the film thickness model (Equation 2) stored in the linewidth model storage unit M16, and the measured film thickness values ​​stored in the measured film thickness value storage unit M13. Figure 10 Step S23). Next, the determination unit M34 outputs the above-mentioned continuation permission information (or continuation permission information) to the control unit M35 based on the predicted linewidth z calculated by the prediction unit M31, indicating whether to continue processing of the substrate W to be targeted. Figure 10 Step S24). If the "can continue?" message indicates that continuing is not possible (in...) Figure 10 If step S24 is "No", the control unit M35 stops the coating and developing apparatus 2. As a result, no resist pattern is formed on the substrate W, and the process ends.

[0120] On the other hand, in the case of whether the information can continue to indicate whether it can continue (in Figure 10 In step S24 (if "Yes"), the calculation unit M32 calculates the processing conditions (PEB temperature) of the substrate W to be targeted based on the predicted linewidth z output by the prediction unit M31. Figure 10 Step S25). Next, the control unit M35 controls the heat treatment unit U2 of the processing module PM4 based on the processing conditions calculated by the calculation unit M32. As a result, a resist pattern with a predetermined linewidth (the linewidth corresponding to the predicted linewidth z) is formed on the surface Wa of the substrate W to be targeted. Figure 10 Step S26).

[0121] Next, at least one sensor unit SE installed inside and outside the coating and developing apparatus 2 measures the data and sends the data to the post-processing data storage unit M12. Thus, the post-processing data storage unit M12 acquires the post-processing data. Figure 10 (Step S27). The timing for acquiring the post-processing data can be any timing from the time immediately after the resist pattern is formed on the surface Wa of the substrate W until the next processing of the substrate W.

[0122] Next, the linewidth of the resist pattern formed on the surface Wa of the substrate W to be targeted is measured by the linewidth measurement unit U4. Figure 10 Step S28). The data (measured linewidth value) of the linewidth of the resist pattern measured by the linewidth measurement unit U4 is stored in the measured linewidth value storage unit M14. In addition, steps S27 and S28 can be executed in parallel, or step S28 can be executed before step S27.

[0123] Next, the updating unit M33 updates the partial regression coefficients β1 to β of the linewidth model stored in the linewidth model storage unit M16 based on the post-event data stored in the post-event data storage unit M12, the measured linewidth values ​​stored in the linewidth measured value storage unit M14, the processing conditions calculated by the calculation unit M32, and the measured film thickness values ​​stored in the film thickness model storage unit M15. m ( Figure 10 (Step S29). Therefore, the updated linewidth model is used when processing the subsequent substrate W. Through the above process, the formation process of the resist pattern for a substrate W is completed.

[0124] [effect]

[0125] The thickness of the resist film R and the linewidth of the resist pattern formed on the surface Wa of the substrate W are related to various states of the coating and developing apparatus 2. Therefore, in the above example, a film thickness model representing the predicted film thickness y and a linewidth model representing the predicted linewidth z are prepared in advance, and prior data representing various states of the coating and developing apparatus 2 are applied to these models to predict the film thickness and linewidth of the substrate W to be processed subsequently. Therefore, the processing quality of the substrate W can be controlled based on the predicted film thickness y or the predicted linewidth z (so-called feedforward control). Thus, by outputting instruction information related to the processing of the substrate W based on the predicted film thickness y or the predicted linewidth z, and performing processing on the substrate W based on this instruction information, the substrate W is not wasted, and structures such as films (resist film R, resist pattern) can be formed on the substrate W with high precision.

[0126] Furthermore, there is a fixed correlation between the prescribed processing conditions (rotation speed) of the coating and developing apparatus 2 on the substrate W and the actual thickness of the resulting resist film R. Therefore, in the above example, using this correlation, the processing conditions (rotation speed) are calculated based on the predicted film thickness y. Thus, the processing conditions for the substrate W to be processed subsequently can be automatically set. Similarly, there is a fixed correlation between the prescribed processing conditions (PEB temperature) of the coating and developing apparatus 2 on the substrate W and the actual linewidth of the resulting resist pattern. Therefore, in the above example, using this correlation, the processing conditions (PEB temperature) are calculated based on the predicted linewidth z. Thus, the processing conditions for the substrate W to be processed subsequently can be automatically set.

[0127] Based on the above example, the coating and developing apparatus 2 is controlled according to the automatically set processing conditions of the substrate W. Therefore, the substrate W can be actually processed based on the automatically set processing conditions.

[0128] Based on the above example, an indication message is output indicating whether to continue processing of substrate W based on the predicted film thickness. If the indication message indicates that processing of substrate W cannot continue, the processing of substrate W is stopped, thereby further reducing waste of substrate W.

[0129] Based on the above example, a linewidth model representing the predicted linewidth z is prepared in advance using a function. Pre-processing data representing various states of the coating and developing apparatus 2 and the measured thickness of the resist film R formed on the surface Wa of the substrate W are applied to this model, thereby enabling the prediction of the linewidth of the substrate W to be processed subsequently. In this case, the measured film thickness value is also used in the calculation of the predicted linewidth z. Therefore, the accuracy of the predicted linewidth z can be improved.

[0130] Based on the above examples, the film thickness model is updated based on post-processing data and measured film thickness values. That is, the film thickness model is updated using various parameters actually applied to the substrate W. Therefore, the accuracy of the film thickness model can be improved. Similarly, based on the above examples, the linewidth model is updated based on post-processing data and measured linewidth values. That is, the linewidth model is updated using various parameters actually applied to the substrate W. Therefore, the accuracy of the linewidth model can be improved.

[0131] Based on the above examples, the film thickness model can be updated based on the prescribed processing conditions (rotation speed) of the coating and developing apparatus 2 on the substrate W, subsequent data, and measured film thickness values. In this case, the number of parameters used to update the film thickness model increases, thus improving the accuracy of the film thickness model. Similarly, based on the above examples, the linewidth model can be updated based on the prescribed processing conditions (PEB temperature) of the coating and developing apparatus 2 on the substrate W, subsequent data, and measured linewidth values. In this case, the number of parameters used to update the linewidth model increases, thus improving the accuracy of the linewidth model.

[0132] Based on the examples above, the membrane thickness model is constructed using a multiple regression equation, which consists of multiple partial regression coefficients and multiple explanatory variables. In this case, a membrane thickness model that considers various factors can be obtained relatively easily. Similarly, the linewidth model is constructed using a multiple regression equation, which consists of multiple partial regression coefficients and multiple explanatory variables. In this case, a linewidth model that considers various factors can be obtained relatively easily.

[0133] Based on the above example, inside the liquid processing unit U1, the sensor unit SE can be positioned above the substrate holding section 20. In this case, due to the influence of the downward flow, the sensor unit SE is located upstream of the substrate holding section 20. Therefore, even if various processing liquids supplied to the substrate W are scattered from the substrate W, the sensor unit SE is not easily affected. Consequently, various data about the environment near the substrate W can be acquired through the sensor unit SE. As a result, the accuracy of the model (film thickness model or linewidth model) and the predicted values ​​(predicted film thickness or predicted linewidth) can be further improved.

[0134] [Variation Example]

[0135] The disclosures in this specification should be considered illustrative in all respects and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the scope and spirit of the claims.

[0136] (1) As Figure 11As shown, the calculation unit M22 can be configured to calculate the processing conditions (so-called feedback control) of the substrate W based on the film thickness measurement values ​​stored in the film thickness measurement value storage unit M13, which are related to the substrate W that was processed before the substrate W that is the target of this processing. Similarly, the calculation unit M32 can be configured to calculate the processing conditions of the substrate W based on the linewidth measurement values ​​stored in the linewidth measurement value storage unit M14, which are related to the substrate W that was processed before the substrate W that is the target of this processing.

[0137] (2) To obtain a film thickness model based on experience, one can use Figure 12 The illustrated controller Ctr. In this case, firstly, the control unit M25 processes the substrate W based on predetermined different processing conditions (process recipes), forming a resist film R on the surface Wa of the substrate W. Next, at least one sensor unit SE installed inside and outside the coating and developing apparatus 2 measures the data and sends the data to the post-processing data storage unit M12. Next, the film thickness of the resist film R formed on the surface Wa of the substrate W is measured by the film thickness measurement unit U3. The acquisition of post-processing data and the measurement of the film thickness of the resist film R can be performed in parallel, or one can be performed before the other. Next, the update unit M23 calculates the partial regression coefficients α1 to α2 based on the post-processing data stored in the post-processing data storage unit M12 and the film thickness measurement values ​​stored in the film thickness measurement value storage unit M13. k In this way, a film thickness model is prepared for calculating the predicted film thickness y.

[0138] Similarly, to obtain a linewidth model based on experience, one can use... Figure 12 The illustrated controller Ctr. In this case, firstly, the control unit M35 processes the substrate W based on predetermined different processing conditions (process recipes) to form a resist pattern on the surface Wa of the substrate W. Next, at least one sensor unit SE installed inside and outside the coating and developing apparatus 2 measures the data and sends the data to the post-processing data storage unit M12. Next, the linewidth of the resist pattern formed on the surface Wa of the substrate W is measured by the linewidth measurement unit U4. The acquisition of post-processing data and the measurement of the linewidth of the resist pattern can be performed in parallel, or one can be performed before the other. Next, the update unit M33 calculates the partial regression coefficients β1 to β2 based on the post-processing data stored in the post-processing data storage unit M12 and the measured linewidth values ​​stored in the linewidth measurement value storage unit M14. m In this way, a linewidth model for calculating the predicted linewidth z is prepared. Furthermore, the update unit M33 can also use the measured film thickness values ​​stored in the film thickness model storage unit M15 to calculate the partial regression coefficients β1 to β2. m .

[0139] (3) To obtain a film thickness model based on experience, one can use Figure 13 The illustrated controller Ctr. In this case, with Figure 12 Unlike the previous example, the calculation unit M22 calculates the processing conditions (feedback control) for the substrate W based on the measured film thickness value related to the substrate W that was processed before the substrate W to be processed in this instance. Then, based on the calculated processing conditions, the subsequent substrate W is processed to form a resist film R on the surface Wa of the substrate W. Next, at least one sensor unit SE installed inside and outside the coating and developing apparatus 2 measures the data and sends it to the post-processing data storage unit M12. Then, the film thickness of the resist film R formed on the surface Wa of the substrate W is measured by the film thickness measurement unit U3. The acquisition of post-processing data and the measurement of the film thickness of the resist film R can be performed in parallel, or one can be performed before the other. Next, the update unit M23 calculates the partial regression coefficients α1 to α2 based on the post-processing data stored in the post-processing data storage unit M12, the measured film thickness value stored in the film thickness measurement value storage unit M13, and the processing conditions calculated by the calculation unit M22. k In this way, a film thickness model is prepared for calculating the predicted film thickness y.

[0140] Similarly, to obtain a linewidth model based on experience, one can use... Figure 13 The illustrated controller Ctr. In this case, with Figure 12 Unlike the previous example, the calculation unit M32 calculates the processing conditions (feedback control) for the substrate W based on the measured linewidth values ​​of the substrate W that was processed before the substrate W to be processed in this instance. Then, based on the calculated processing conditions, the subsequent substrate W is processed to form a resist pattern on the surface Wa of the substrate W. Next, at least one sensor unit SE installed inside and outside the coating and developing apparatus 2 measures the data and sends it to the post-processing data storage unit M12. Then, the linewidth of the resist pattern formed on the surface Wa of the substrate W is measured by the linewidth measurement unit U4. The acquisition of post-processing data and the measurement of the resist film R can be performed in parallel, or one can be performed before the other. Next, the update unit M33 calculates the regression coefficients β1 to β2 based on the post-processing data stored in the post-processing data storage unit M12, the measured linewidth values ​​stored in the linewidth measurement value storage unit M14, and the processing conditions calculated by the calculation unit M32. m In this way, a linewidth model is prepared for calculating the predicted linewidth z.

[0141] (4) Figure 14 As shown, the judgment unit M24 can determine whether there is an anomaly in the prior data on which the predicted film thickness y is calculated, based on the predicted film thickness y calculated by the prediction unit M21. The judgment unit M24 can be configured to determine the vicinity of the sensor unit SE that measured the prior data based on the anomaly in the prior data. Similarly, as... Figure 14 As shown, the judgment unit M34 can determine whether there are any anomalies in the prior data on which the predicted linewidth z is calculated, based on the predicted linewidth z calculated by the prediction unit M31. The judgment unit M34 can be configured to determine the vicinity of the sensor unit SE that measured the prior data based on the anomalies in the prior data. For example, principal component analysis, the Maharanobis-Taguchi System (MT System), or the T-method can be used to determine the anomalies in the prior data.

[0142] (5) Figure 15 As shown, the prediction unit M31 can also use the predicted film thickness y calculated by the prediction unit M21 when calculating the predicted linewidth z. In this case, the predicted film thickness y is also used in the calculation of the predicted linewidth z. Therefore, the accuracy of the predicted linewidth z can be improved.

[0143] (6) The processing conditions calculated by the calculation unit M22 are not only the rotational speed of the substrate W in the liquid treatment unit U1 of the processing module PM3, but also the temperature or time of the heat treatment (PAB) in the heat treatment unit U2 of the processing module PM3. The control unit M25 can control the heat treatment unit U2 based on the calculated processing conditions (temperature or time of PAB).

[0144] (7) The processing conditions calculated by the calculation unit M32 are not only the temperature of the heat treatment (PEB) in the heat treatment unit U2 of the processing module PM4, but also the time of the heat treatment (PEB) in the heat treatment unit U2 of the processing module PM4. Alternatively, the processing conditions calculated by the calculation unit M32 can be the development time of the resist film R in the liquid treatment unit U1 of the coating and developing apparatus 2 and the temperature of the developing solution.

[0145] (8) The thickness of the resist film R can be measured by the film thickness measuring unit U3 disposed inside the coating and developing apparatus 2, or by an external measuring device disposed outside the coating and developing apparatus 2. Similarly, the line width of the resist pattern can be measured by the line width measuring unit U4 disposed inside the coating and developing apparatus 2, or by an external measuring device disposed outside the coating and developing apparatus 2.

[0146] (9) The above-mentioned feedforward control or feedback control can be performed on a single substrate W or on multiple substrates W (in batches).

[0147] (10) The state of the coating and developing apparatus 2 can be estimated by using a Kalman filter.

[0148] (11) When making a thickness model or linewidth model of the membrane, the method of selecting explanatory variables can be, for example, the variable addition method, the variable reduction method, the variable addition and subtraction method, the artificial intelligence method (genetic algorithm, etc.), or a combination of these methods.

[0149] [Other examples]

[0150] Example 1. An example of an information processing apparatus includes: a prediction unit that calculates a predicted film thickness when a substrate processing apparatus processes a substrate based on a film thickness model and prior data, wherein the film thickness model represents the relationship between the state of the substrate processing apparatus and the film thickness of a coating film formed on the surface of the substrate by the substrate processing apparatus, and the prior data represents the state of the substrate processing apparatus before processing the substrate by the substrate processing apparatus; and an output unit that outputs instruction information related to the processing of the substrate based on the predicted film thickness before processing the substrate by the substrate processing apparatus. In this case, the various states of the substrate processing apparatus are related to the film thickness of the coating film formed on the surface of the substrate, so the film thickness formed on the substrate is predicted by inputting prior data into the film thickness model. Therefore, the processing quality of the substrate can be judged based on the predicted film thickness (so-called feedforward control). Thus, by outputting instruction information related to the processing of the substrate based on the predicted film thickness or predicted linewidth, and performing processing on the substrate based on this instruction information, substrate is not wasted, and structures such as films can be formed on the substrate with high precision.

[0151] Example 2. The output unit of Example 1 may have a calculation unit configured to calculate processing conditions based on the predicted film thickness. Since there is a fixed correlation between the processing conditions of the substrate and the film thickness, the processing conditions of the substrate to be processed thereafter can be automatically set by using the predicted film thickness.

[0152] Example 3. The apparatus of Example 2 may further include a control unit configured to control the substrate processing apparatus based on processing conditions. In this case, the substrate can be actually processed based on automatically set processing conditions.

[0153] Example 4. The output unit of any of Examples 1 to 3 may have a determination unit that outputs an indication message indicating whether to continue processing the substrate. If the indication message indicates that processing of the substrate W cannot continue, the processing of the substrate W is stopped, thereby further reducing waste of the substrate W.

[0154] Example 5. The apparatus in any of Examples 1 to 4 may further include an updating unit configured to update the film thickness model based on post-processing data and measured values ​​of the film thickness of a coating film formed on the surface of the substrate by processing the substrate using a substrate processing apparatus. The post-processing data represents the state of the substrate processing apparatus after the substrate processing is completed. In this case, various parameters from the actual substrate processing are used to update the film thickness model. Therefore, the accuracy of the film thickness model can be improved.

[0155] Example 6. In the apparatus of Example 2, the updating unit can be configured to update the film thickness model based on the processing conditions of the substrate processing apparatus, subsequent data, and measured film thickness values. In this case, the film thickness model is updated using various parameters actually applied during substrate processing. Therefore, the accuracy of the film thickness model can be further improved.

[0156] Example 7. In any of the devices in Examples 1 to 6, the membrane thickness model can be a multiple regression equation consisting of multiple partial regression coefficients and multiple explanatory variables. In this case, a membrane thickness model that takes into account various factors can be obtained relatively easily.

[0157] Example 8. Another example of an information processing apparatus includes: a prediction unit configured to calculate a predicted linewidth when a substrate processing apparatus processes a substrate based on a linewidth model and prior data, wherein the linewidth model represents the relationship between the state of the substrate processing apparatus and the linewidth of a pattern formed on the surface of the substrate by the substrate processing apparatus, and the prior data represents the state of the substrate processing apparatus before processing the substrate by the substrate processing apparatus; and an output unit that outputs indication information related to the processing of the substrate based on the predicted linewidth before processing the substrate by the substrate processing apparatus. In this case, the same operating effect as the apparatus in Example 1 can be obtained.

[0158] Example 9. The output unit of Example 8 can have a calculation unit configured to calculate processing conditions based on the predicted linewidth. In this case, the same effect as the device in Example 2 can be obtained.

[0159] Example 10. The apparatus of Example 8 may also include a control unit configured to control the substrate processing apparatus based on processing conditions. In this case, the same operating effect as the apparatus of Example 3 can be obtained.

[0160] Example 11. The output unit of any of Examples 8 to 10 may have a determination unit that outputs an indication message indicating whether to continue processing the substrate. In this case, the same operating effect as the device in Example 4 can be obtained.

[0161] Example 12. The apparatus in any of Examples 8 to 11 may further include an update unit configured to update the linewidth model based on post-processing data and measured linewidth values ​​of a pattern formed on the surface of the substrate by processing the substrate using a substrate processing apparatus, wherein the state of the substrate processing apparatus is indicated after the substrate processing is completed. In this case, the same effect as the apparatus in Example 2 can be obtained.

[0162] In the apparatus of Examples 13 and 12, the updating unit can be configured to update the linewidth model based on the processing conditions of the substrate processing apparatus, subsequent data, and measured linewidth values. In this case, the same effect as the apparatus of Example 3 can be obtained.

[0163] Example 14. In the apparatus of any of Examples 8 to 13, the prediction unit may be configured to calculate the predicted linewidth based on a linewidth model, prior data, and a measured value of the film thickness of a coating film formed on the surface of the substrate by processing the substrate using a substrate processing apparatus. In this case, the measured film thickness value is also used when calculating the predicted linewidth. Therefore, the accuracy of the predicted linewidth can be improved.

[0164] Example 15. In the apparatus of any of Examples 8 to 13, the prediction unit may be configured to calculate the predicted linewidth based on a linewidth model, prior data, and a film thickness model, wherein the film thickness model represents the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus. In this case, the predicted film thickness is also used when calculating the predicted linewidth. Therefore, the accuracy of the predicted linewidth can be improved.

[0165] Example 16. In any of the devices in Examples 8 to 15, the linewidth model can be a multiple regression equation consisting of multiple partial regression coefficients and multiple explanatory variables. In this case, the same effect as the device in Example 6 can be obtained.

[0166] Example 17. In the apparatus of Example 7 or Example 16, the plurality of partial regression coefficients may include at least one value selected from the group consisting of: a value corresponding to the viscosity of the coating liquid applied to the substrate, a value corresponding to the temperature inside the substrate processing apparatus, a value corresponding to the relative humidity inside the substrate processing apparatus, a value corresponding to the pressure difference between the inside and outside of the substrate processing apparatus, a value corresponding to the wind speed inside the substrate processing apparatus, a value corresponding to the structure of the substrate processing apparatus, and a value corresponding to the type of organic solvent used in the processing of the substrate.

[0167] Example 18. In the apparatus of Examples 1 to 17, the prior data may include values ​​obtained by at least one sensor selected from the group consisting of: a viscosity sensor configured to measure the viscosity of a coating liquid applied to a substrate; a temperature sensor configured to measure the temperature inside the substrate processing apparatus; a humidity sensor configured to measure the relative humidity inside the substrate processing apparatus; a differential pressure sensor configured to measure the pressure difference between the inside and outside of the substrate processing apparatus; and a wind speed sensor configured to measure the wind speed inside the substrate processing apparatus.

[0168] Example 19. In the apparatus of Example 18, at least one sensor may be configured inside or outside the processing chamber of the substrate processing apparatus.

[0169] Example 20. In the apparatus of Example 19, at least one sensor may be disposed outside the processing room of the substrate processing apparatus and in the substrate transport path or substrate receiving container.

[0170] Example 21. In the apparatus of Example 19 or Example 20, at least one sensor may be disposed above the substrate holding section provided in the substrate processing chamber of the substrate processing apparatus. Inside the processing chamber, a downward airflow (downflow) typically flows toward the substrate. Therefore, on the downstream side of the substrate, various processing liquids used to process the substrate are prone to scattering. According to Example 19, various data about the environment near the substrate can be acquired by the sensor without being affected by the various processing liquids. Therefore, the accuracy of the model (film thickness model or linewidth model) and the predicted values ​​(predicted film thickness or predicted linewidth) can be further improved.

[0171] Example 22. An example of an information processing method includes: calculating a predicted film thickness when a substrate processing apparatus processes a substrate based on a film thickness model and prior data, wherein the film thickness model represents the relationship between the state of the substrate processing apparatus and the film thickness of a coating film formed on the surface of the substrate by the substrate processing apparatus, and the prior data represents the state of the substrate processing apparatus before processing the substrate; and outputting indication information related to the processing of the substrate based on the predicted film thickness before processing the substrate by the substrate processing apparatus. In this case, the same effect as the apparatus in Example 1 can be obtained.

[0172] Example 23. Other examples of information processing methods include: calculating the predicted linewidth when a substrate processing apparatus processes a substrate based on a linewidth model and prior data, wherein the linewidth model represents the relationship between the state of the substrate processing apparatus and the linewidth of a pattern formed on the surface of the substrate by the substrate processing apparatus, and the prior data represents the state of the substrate processing apparatus before processing the substrate; and outputting indication information related to the processing of the substrate based on the predicted linewidth before processing the substrate by the substrate processing apparatus. In this case, the same effect as the apparatus in Example 1 can be obtained.

[0173] Example 24. A computer-readable recording medium may record a program for causing an information processing apparatus to perform the methods of Example 22 or Example 23. In this case, the same effect as the apparatus of Example 1 can be obtained. In this specification, a computer-readable storage medium may include a non-transitory computer recording medium (e.g., various primary or secondary storage devices) and a transitory computer recording medium (e.g., a data signal that can be provided via a network).

Claims

1. An information processing device, comprising: The prediction unit is configured to calculate the predicted film thickness when the substrate processing apparatus processes the substrate based on a film thickness model and prior data. The film thickness model represents the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus. The prior data represents the state of the substrate processing apparatus before processing the substrate by the substrate processing apparatus. The output unit includes a calculation unit configured to calculate processing conditions for the substrate processing apparatus to process the substrate based on the predicted film thickness. Before the processing conditions are calculated by the calculation unit and before the substrate is processed by the substrate processing apparatus, the output unit outputs indication information related to the processing of the substrate based on the predicted film thickness. in, The output unit includes a determination unit that, before the processing conditions are calculated by the calculation unit and before the substrate is processed by the substrate processing apparatus, outputs indication information indicating whether to continue processing the substrate based on whether the predicted film thickness is within a predetermined design value range. The prior data includes values ​​obtained by a wind speed sensor configured to measure the wind speed within the substrate processing apparatus.

2. The apparatus according to claim 1, characterized in that, It also includes a control unit configured to control the substrate processing apparatus based on the processing conditions calculated by the computing unit.

3. The apparatus according to claim 1, characterized in that, It also includes an update unit configured to update the film thickness model based on post-processing data and a measured film thickness of a coating film formed on the surface of the substrate by processing the substrate using the substrate processing apparatus. The post-processing data represents the state of the substrate processing apparatus when the processing of the substrate is completed.

4. The apparatus according to claim 3, characterized in that, The updating unit is configured to update the film thickness model based on the processing conditions of the substrate processing apparatus, the post-processing data, and the measured film thickness value.

5. The apparatus according to claim 1, characterized in that, The film thickness model is a multiple regression model consisting of multiple partial regression coefficients and multiple explanatory variables.

6. The apparatus according to claim 5, characterized in that, The plurality of partial regression coefficients include at least one value selected from the group consisting of: a value corresponding to the viscosity of the coating liquid applied to the substrate, a value corresponding to the temperature inside the substrate processing apparatus, a value corresponding to the relative humidity inside the substrate processing apparatus, a value corresponding to the pressure difference between the inside and outside of the substrate processing apparatus, a value corresponding to the wind speed inside the substrate processing apparatus, and a value corresponding to the type of organic solvent used in the processing of the substrate.

7. The apparatus according to claim 1, characterized in that, The prior data also includes values ​​obtained by at least one sensor selected from the group consisting of: a viscosity sensor configured to measure the viscosity of a coating liquid applied to the substrate; a temperature sensor configured to measure the temperature within the substrate processing apparatus; a humidity sensor configured to measure the relative humidity within the substrate processing apparatus; and a differential pressure sensor configured to measure the pressure difference between the inside and outside of the substrate processing apparatus.

8. An information processing device, comprising: The prediction unit is configured to calculate the predicted linewidth when a substrate is processed by a substrate processing apparatus based on a linewidth model and prior data. The linewidth model represents the relationship between the state of the substrate processing apparatus and the linewidth of a pattern formed on the surface of the substrate by the substrate processing apparatus. The prior data represents the state of the substrate processing apparatus before processing the substrate. The output unit includes a calculation unit configured to calculate processing conditions for the substrate processing apparatus to process the substrate based on the predicted linewidth. Before the processing conditions are calculated by the calculation unit and before the substrate processing apparatus processes the substrate, the output unit outputs indication information related to the processing of the substrate based on the predicted linewidth. in, The output unit includes a determination unit that, before the processing conditions are calculated by the calculation unit and before the substrate is processed by the substrate processing apparatus, outputs indication information indicating whether to continue processing the substrate based on whether the predicted linewidth is within a predetermined design value range. The prior data includes values ​​obtained by a wind speed sensor configured to measure the wind speed within the substrate processing apparatus.

9. The apparatus according to claim 8, characterized in that, It also includes a control unit configured to control the substrate processing apparatus based on the processing conditions calculated by the computing unit.

10. The apparatus according to claim 8, characterized in that, It also includes an update unit configured to update the linewidth model based on post-processing data and measured linewidth values ​​of patterns formed on the surface of the substrate by processing the substrate using the substrate processing apparatus, wherein the post-processing data represents the state of the substrate processing apparatus when the processing of the substrate is completed.

11. The apparatus according to claim 10, characterized in that, The updating unit is configured to update the linewidth model based on the processing conditions of the substrate processing apparatus, the post-processing data, and the measured linewidth value.

12. The apparatus according to claim 8, characterized in that, The prediction unit is configured to calculate the predicted linewidth based on the linewidth model, the prior data, and the measured thickness of the coating film formed on the surface of the substrate by processing the substrate using the substrate processing apparatus.

13. The apparatus according to claim 8, characterized in that, The prediction unit is configured to calculate the predicted linewidth based on the linewidth model, the prior data, and the film thickness model, wherein the film thickness model represents the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus.

14. The apparatus according to claim 8, characterized in that, The linewidth model is a multiple regression equation consisting of multiple partial regression coefficients and multiple explanatory variables.

15. The apparatus according to claim 14, characterized in that, The plurality of partial regression coefficients include at least one value selected from the group consisting of: a value corresponding to the viscosity of the coating liquid applied to the substrate, a value corresponding to the temperature inside the substrate processing apparatus, a value corresponding to the relative humidity inside the substrate processing apparatus, a value corresponding to the pressure difference between the inside and outside of the substrate processing apparatus, a value corresponding to the wind speed inside the substrate processing apparatus, and a value corresponding to the type of organic solvent used in the processing of the substrate.

16. The apparatus according to claim 8, characterized in that, The prior data also includes values ​​obtained by at least one sensor selected from the group consisting of: a viscosity sensor configured to measure the viscosity of a coating liquid applied to the substrate; a temperature sensor configured to measure the temperature within the substrate processing apparatus; a humidity sensor configured to measure the relative humidity within the substrate processing apparatus; and a differential pressure sensor configured to measure the pressure difference between the inside and outside of the substrate processing apparatus.

17. The apparatus according to claim 16, characterized in that, The at least one sensor is disposed inside or outside the processing chamber of the substrate processing apparatus.

18. The apparatus according to claim 17, characterized in that, The at least one sensor is disposed outside the processing room of the substrate processing apparatus and in the transport path of the substrate or in the container containing the substrate.

19. The apparatus according to claim 17 or 18, characterized in that, The at least one sensor is disposed in the processing chamber of the substrate processing apparatus and above the substrate holding portion disposed in the processing chamber.

20. An information processing method, comprising: The predicted film thickness is calculated based on the film thickness model and prior data when the substrate is processed by the substrate processing apparatus. The film thickness model represents the relationship between the state of the substrate processing apparatus and the film thickness of the coating film formed on the surface of the substrate by the substrate processing apparatus. The prior data represents the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus. The processing conditions for the substrate to be processed by the substrate processing apparatus are calculated based on the predicted film thickness. as well as Before calculating the processing conditions and before processing the substrate by the substrate processing apparatus, indication information related to the processing of the substrate is output based on the predicted film thickness. Specifically, before calculating the processing conditions and before processing the substrate by the substrate processing apparatus, an instruction message indicating whether to continue processing the substrate is output based on whether the predicted film thickness is within the range of a predetermined design value. The prior data includes values ​​obtained by a wind speed sensor configured to measure the wind speed within the substrate processing apparatus.

21. An information processing method, comprising: The predicted linewidth is calculated based on a linewidth model and prior data when the substrate is processed by the substrate processing apparatus. The linewidth model represents the relationship between the state of the substrate processing apparatus and the linewidth of the pattern formed on the surface of the substrate by the substrate processing apparatus. The prior data represents the state of the substrate processing apparatus before the substrate is processed by the substrate processing apparatus. The processing conditions for the substrate to be processed by the substrate processing device are calculated based on the predicted linewidth. as well as Before calculating the processing conditions and before processing the substrate by the substrate processing apparatus, indication information related to the processing of the substrate is output based on the predicted linewidth. Specifically, before calculating the processing conditions and before processing the substrate by the substrate processing apparatus, an instruction message indicating whether to continue processing the substrate is output based on whether the predicted linewidth is within the range of a predetermined design value. The prior data includes values ​​obtained by a wind speed sensor configured to measure the wind speed within the substrate processing apparatus.

22. A computer-readable recording medium having a program recorded thereon for causing an information processing apparatus to perform the information processing method according to claim 20 or 21.

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