Pixel

Abstract

This application relates to a pixel. The pixel includes: a first insulating film disposed on a substrate; a light-emitting element disposed on the first insulating film; a second insulating film disposed on the light-emitting element to cover at least a portion of the light-emitting element; a first contact electrode and a second contact electrode, each of the first contact electrode and the second contact electrode including at least a portion disposed on the first insulating film and electrically connected to the light-emitting element; and an encapsulation layer including a photosensitive material.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0066097, filed on June 1, 2020, with the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to pixels, methods of manufacturing the same, and display devices including the same, and more specifically, to pixels having contact electrodes spaced apart from each other on a light-emitting element formed in a single process, methods of manufacturing the pixels, and display devices including the pixels. Background Technology

[0004] With increasing interest in information display and the growing demand for portable information media, the need for and commercialization of display devices has attracted attention. Summary of the Invention

[0005] The purpose of this disclosure is to provide a pixel, a method of manufacturing the same, and a display device including the same, wherein some processing steps of the pixel can be omitted, and thus the required cost is reduced.

[0006] Another object of this disclosure is to provide a pixel that is easy to form contact electrodes, a method of manufacturing the same, and a display device including the same.

[0007] The purpose of this disclosure is not limited to the above purposes, and other technical issues not described will be clearly understood by those skilled in the art from the following description.

[0008] According to embodiments of this disclosure, a pixel can be provided. The pixel may include: a first insulating film disposed on a substrate; a light-emitting element disposed on the first insulating film; a second insulating film disposed on the light-emitting element to cover at least a portion of the light-emitting element; a first contact electrode and a second contact electrode, each of the first and second contact electrodes including at least a portion disposed on the first insulating film and electrically connected to the light-emitting element; and an encapsulation layer comprising a photosensitive material. Each of the first and second contact electrodes may be disposed on a corresponding side surface of the side surface of the second insulating film and may not be in contact with each other on the upper surface of the second insulating film, and the encapsulation layer may be disposed on the first and second contact electrodes.

[0009] In an embodiment, the height of the second insulating film relative to the main surface of the light-emitting element can be equal to or greater than the height of the first contact electrode and the height of the second contact electrode.

[0010] In one embodiment, the first contact electrode may include a distal end that is physically in contact with the second insulating film and spaced apart from the light-emitting element. The second contact electrode may also have a distal end that is physically in contact with the second insulating film and spaced apart from the light-emitting element. Each of the distal ends of the first and second contact electrodes may be spaced apart from the substrate by an equal distance.

[0011] In one embodiment, the top surface between the distal end of the first contact electrode and the distal end of the second contact electrode may be parallel to the main surface of the substrate.

[0012] In this embodiment, the first contact electrode and the second contact electrode may be disposed on the light-emitting element or may not be disposed on the upper surface of the second insulating film.

[0013] In this embodiment, the encapsulation layer may not be disposed on the second insulating film.

[0014] In one embodiment, the encapsulation layer may include a first encapsulation region and a second encapsulation region. The first encapsulation region may be adjacent to the second insulating film, compared to the second encapsulation region. The first encapsulation region of the encapsulation layer may have the same height as the first contact electrode and the second contact electrode.

[0015] In an embodiment, the second insulating film may include a first material, and the pixel may also include a third insulating film and a fourth insulating film, each of the third insulating film and the fourth insulating film being disposed on the first insulating film, including the first material, and spaced apart from each other.

[0016] In one embodiment, at least a portion of the first contact electrode may be disposed on a first side surface of the second insulating film, and at least a portion of the second contact electrode may be disposed on a second side surface of the second insulating film, the second side surface being opposite to the first side surface.

[0017] In an embodiment, the encapsulation layer, the first contact electrode, the second contact electrode, and the second insulating film can be formed by photolithography using a mask that includes at least a halftone region, and during the photolithography process, in a planar view, the upper surface of the second insulating film can correspond to the halftone region of the mask.

[0018] According to another embodiment of this disclosure, a method for manufacturing a pixel can be provided. The method may include: forming a first electrode and a second electrode spaced apart from each other on a substrate; forming a first insulating film on the first electrode and the second electrode; disposing a light-emitting element on the first insulating film; forming a second insulating film to cover at least a portion of the light-emitting element; depositing contact electrodes to electrically connect to the light-emitting element and cover at least the upper surface of the second insulating film; applying a photosensitive material to a first material obtained by depositing the contact electrodes; removing at least a portion of the photosensitive material by using a mask including at least a halftone region; and removing at least a portion of the contact electrodes disposed on the upper surface of the second insulating film by using a second material as an etching mask, wherein the second material is obtained during the removal of at least a portion of the photosensitive material.

[0019] In one embodiment, after a portion of the predetermined contact electrode is removed, the photosensitive material that was at least partially removed is not removed.

[0020] In one embodiment, removing at least a portion of the photosensitive material may include arranging a halftone region of the mask to correspond in a planar view to the upper surface of the second insulating film.

[0021] In an embodiment, the deposition of the contact electrode may include: forming a contact electrode to include a first contact electrode, a second contact electrode, and a third contact electrode; forming the first and second contact electrodes not disposed at a position corresponding to the upper surface of the second insulating film; and forming the third contact electrode disposed at a position corresponding to the upper surface of the second insulating film. Removing at least a portion of the contact electrode may include removing the third contact electrode.

[0022] In this embodiment, the first contact electrode and the second contact electrode can be formed simultaneously.

[0023] In an embodiment, the method may further include, after removing at least a portion of the contact electrode, forming each of the first and second contact electrodes to have equal height relative to the main surface of the substrate.

[0024] In an embodiment, the formation of the second insulating film may include forming a second insulating film on each of the surface of the light-emitting element, the first insulating film on the first electrode, and the first insulating film on the second electrode.

[0025] According to another embodiment of this disclosure, a display device including pixels can be provided.

[0026] This disclosure is not limited to the embodiments described above, and those skilled in the art can clearly understand other embodiments not described from this specification and the accompanying drawings.

[0027] According to embodiments of this disclosure, a process for contacting electrodes that has been performed separately in conventional methods can be executed in a single process, and thus a pixel with reduced process cost, a method for manufacturing the pixel, and a display device including the pixel can be provided.

[0028] According to another embodiment of this disclosure, a halftone mask is used to form contact electrodes, insulating films, etc., and a pixel that can be easily formed with contact electrodes, a method for manufacturing the pixel, and a display device including the pixel can be provided.

[0029] The effects of this disclosure are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the effects not described. Attached Figure Description

[0030] The above and other features of this disclosure will become more apparent from the accompanying drawings, which describe embodiments of the present disclosure in more detail, in which:

[0031] Figure 1 This is a schematic plan view illustrating a display device including pixels according to an embodiment of this specification;

[0032] Figure 2 This is a schematic cross-sectional view showing the structure of a pixel according to an embodiment of this specification;

[0033] Figure 3 This is a schematic plan view showing the upper surface of a pixel according to an embodiment of this specification;

[0034] Figure 4 This is a schematic circuit diagram illustrating a pixel driving circuit for operating a light-emitting element included in a pixel, according to an embodiment of this specification.

[0035] Figure 5 This is a schematic perspective view showing a light-emitting element included in a pixel according to an embodiment of this specification;

[0036] Figure 6 This is a flowchart illustrating a method for manufacturing pixels according to an embodiment of this specification;

[0037] Figures 7 to 11 These are schematic cross-sectional views of pixels according to embodiments of this specification, showing specific points in time during the execution of the pixel manufacturing method;

[0038] Figure 12A and Figure 12B This is a schematic cross-sectional view of pixels according to embodiments of this specification, showing pixels in which some of the structures have been modified;

[0039] Figure 13This is a schematic plan view showing the upper surface of a pixel according to yet another embodiment of this specification; and

[0040] Figures 14 to 18 This is a schematic cross-sectional view of a pixel according to another embodiment of this specification, showing specific points in time during the execution of the method for manufacturing the pixel. Detailed Implementation

[0041] Since the embodiments described in this specification are intended to clearly illustrate the spirit of this disclosure to those skilled in the art, this disclosure is not limited to the embodiments described in this specification, and the scope of this disclosure should be interpreted to include modifications or variations that do not depart from the spirit of this disclosure.

[0042] Unless otherwise defined or implied herein, all terms used (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms, such as those defined in common dictionaries, shall be interpreted as having the meaning consistent with their meaning in the context of the relevant art and shall not be interpreted in an idealized or overly formal sense unless clearly defined in the specification.

[0043] The accompanying drawings are intended to readily describe this disclosure. However, since the elements shown in the drawings may be exaggerated and illustrated to aid understanding, this disclosure is not limited to the drawings.

[0044] In the specification and claims, the phrase “at least one of…” is intended, for the purposes of its meaning and interpretation, to include the meaning of “at least one selected from the group consisting of…”. For example, “at least one of A and B” can be understood to mean “A, B, or A and B”.

[0045] In this specification, detailed descriptions of known configurations or functions related to this disclosure may be omitted when it is determined that such detailed descriptions may obscure the subject matter of this disclosure.

[0046] This disclosure relates to pixels, methods of manufacturing the same, and display devices including the same, and more specifically, to pixels having contact electrodes spaced apart from each other on a light-emitting element formed in a single process, methods of manufacturing the pixels, and display devices including the pixels.

[0047] According to another embodiment of this specification, a display device including pixels can be provided.

[0048] In the following text, reference will be made to Figures 1 to 11 , Figure 12A and Figure 12B To describe the pixels according to the embodiments of this specification.

[0049] Figure 1 This is a schematic plan view illustrating a display device including pixels according to an embodiment of this specification.

[0050] A display device refers to a device configured to provide visual data to a user. The display device defined in this specification refers to a device including a light-emitting element, wherein the light-emitting element is configured to emit light in the presence of an electrical signal. For example, a display device including pixels according to embodiments of this specification is not limited to specific applications such as tablet PCs, televisions, smartphones, and laptop computers.

[0051] Reference Figure 1 The display device 1 may include a substrate SUB, a pixel PXL, a driving section (not shown), and a line section (not shown).

[0052] The substrate SUB may include the display area DA and the non-display area NDA.

[0053] The display area DA and the non-display area NDA can be physically divided.

[0054] Pixel PXL can be positioned within the display area DA.

[0055] The driving and line components can be located in the non-display area NDA.

[0056] Multiple pixels PXL can be set on the substrate SUB. For example, although for convenience, in Figure 1 Only a single pixel is shown, but the display device 1 may include multiple pixels PXL.

[0057] Depending on the purpose of the display device 1, the substrate SUB may comprise a rigid material or a flexible material. However, the materials used in the substrate SUB of the embodiments of this disclosure are not limited to specific examples.

[0058] In a plan view, the display area DA can be included within a region of the substrate SUB. As an example, the display area DA can be located in the central region of the substrate SUB.

[0059] The display area DA can be the area where visible data is displayed externally. The display area DA can represent the area in which the pixel PXL is located.

[0060] In a planar view, the non-display area NDA can be included within a region of the substrate SUB. The non-display area NDA can represent the region in which the pixel PXL is not located.

[0061] In a plan view, the non-display area NDA may not overlap with the display area DA. For example, the non-display area NDA may be located on the outer surface surrounding the display area DA or in an area adjacent to it.

[0062] Pixel PXL can be set on the substrate SUB. Pixel PXL can be set in the display area DA.

[0063] Pixel PXL may include at least one light-emitting element LD (light-emitting diode) (see...) Figure 2 A light-emitting element (LD) can be used as a light source that emits light when an electrical signal is applied. The following will refer to... Figure 5 Describe in detail the specific structure, operation, and function of the light-emitting element (LD).

[0064] In the plan view, the driving section can be positioned in the non-display area NDA. The driving section can output an electrical signal to pixel PXL. When the electrical signal is provided to pixel PXL, the light-emitting element LD included in pixel PXL can emit light. The following will refer to... Figure 4 This describes the details of a circuit diagram showing the specific electrical signal flow of the drive section.

[0065] In a plan view, the line portion can be located in the non-display area NDA.

[0066] The line section can electrically connect the driving section to the pixel PXL.

[0067] In the following text, reference will be made to Figures 2 to 5 Detailed description of the pixels according to the embodiments described in this specification.

[0068] Figure 2 This is a schematic cross-sectional view illustrating the structure of a pixel according to an embodiment of this specification.

[0069] Reference Figure 2 Pixels (reference) Figure 1 The “PXL” may include a pixel circuit unit (PCL) and a display element unit (DPL).

[0070] The pixel circuit unit (PCL) may include pixel driving circuitry, which includes at least one transistor. Referring below... Figure 4 To describe the pixel driving circuit.

[0071] Figure 4 This is a schematic circuit diagram illustrating the electrical connections of a pixel driving circuit for operating a light-emitting element included in a pixel, according to an embodiment of this specification.

[0072] In the following sections, exemplary electrical connections related to the pixel driving circuitry will be described. However, the pixel driving circuitry of this disclosure is not limited to the exemplary electrical connections described, and may include or be modified and implemented with additional electrical components. The described transistors are not limited to a particular type of transistor.

[0073] The light-emitting element unit 12 can be electrically connected to the first driving power supply VDD through the first power supply line PL1, and can be electrically connected to the second driving power supply VSS through the second power supply line PL2.

[0074] The light-emitting element unit 12 may include a light-emitting element LD. With reference to the direction of the electrical signal flow, the light-emitting element LD may be disposed between the first electrode EL1 and the second electrode EL2.

[0075] In this case, if the first electrode EL1 is the anode electrode, the second electrode EL2 can be the cathode electrode. As another example, if the first electrode EL1 is the cathode electrode, the second electrode EL2 can be the anode electrode.

[0076] The light-emitting element unit 12 may include a plurality of light-emitting elements LD. When multiple light-emitting elements LD are included, the light-emitting elements LD can be arranged in a predetermined manner. For example, the light-emitting elements LD can be arranged in parallel with respect to the potential application points of the first driving power supply VDD and the second driving power supply VSS (see reference). Figure 4 (The arrangement shown above). However, the arrangement of light-emitting elements (LDs) is not limited to the example above, and can have different arrangements such as series connection.

[0077] The first driving power supply VDD and the second driving power supply VSS can have different potentials. When a potential difference equal to or greater than a predetermined threshold voltage is applied to the light-emitting element LD due to the potential difference between the first driving power supply VDD and the second driving power supply VSS, the light-emitting element LD can emit light. For example, each light-emitting element LD can emit light based on the potential difference between the first driving power supply VDD and the second driving power supply VSS.

[0078] The light-emitting element unit 12 can emit light based on an electrical signal provided from the pixel driving circuit 14. The light-emitting element LD can emit light with a brightness corresponding to the electrical signal applied from the pixel driving circuit 14.

[0079] The pixel driving circuit 14 can be electrically connected to the data line Dj and scan line Si of the pixel PXL. The data line Dj and scan line Si can be as described above. Figure 1 The line portion of the description.

[0080] Reference above Figure 1 The described drive section can output data signals via data line Dj and scan signals via scan line Si.

[0081] Data line Dj can be formed along the first line. Scan line Si can be formed along the second line, wherein the second line is at least not parallel to the first line. According to the example, data line Dj can be arranged in the longitudinal direction (or vertical direction) in the plan view of display device 1, and scan line Si can be arranged in the transverse direction (or horizontal direction) in the plan view of display device 1.

[0082] As referenced above Figure 1 As described, the display device 1 may include a pixel PXL. The pixel PXL disposed in the i-th row and j-th column may be electrically connected to the i-th scan line Si and the j-th data line Dj.

[0083] The pixel driving circuit 14 may include a first transistor T1, a second transistor T2, a storage capacitor Cst, and a first node N1.

[0084] The first transistor T1 can be a driving transistor. The first transistor T1 can have a first terminal and a second terminal. The first terminal and the second terminal of the first transistor T1 can be the source electrode and the drain electrode, respectively. As another example, the first terminal and the second terminal of the first transistor T1 can be the drain electrode and the source electrode, respectively.

[0085] The first terminal of the first transistor T1 can be electrically connected to the first driving power supply VDD, and the second terminal of the first transistor T1 can be electrically connected to the first electrode EL1 of the light-emitting element LD. The gate electrode of the first transistor T1 can be electrically connected to the first node N1.

[0086] The second transistor T2 can be a switching transistor. The second transistor T2 can have a first terminal and a second terminal. The first terminal of the second transistor T2 can be electrically connected to the data line Dj, and the second terminal of the second transistor T2 can be electrically connected to the first node N1. The gate electrode of the second transistor T2 can be electrically connected to the scan line Si.

[0087] One electrode of the storage capacitor Cst can be electrically connected to the first drive power supply VDD, and the other electrode of the storage capacitor Cst can be electrically connected to the first node N1.

[0088] When a scan signal with a voltage that can turn on the second transistor T2 is applied from the scan line Si, the second transistor T2 can electrically connect the data line Dj to the first node N1.

[0089] At this time, the data signal provided from data line Dj can be supplied to the storage capacitor Cst through the first node N1, and can be charged in the storage capacitor Cst. The voltage charged in the storage capacitor Cst can be maintained until the data signal of the next frame is provided.

[0090] The first transistor T1 can control the electrical signal supplied to the light-emitting element unit 12 to correspond to the potential data of the first node N1.

[0091] Finally, when an electrical signal is provided to the light-emitting element unit 12 via the first transistor T1, the light-emitting element LD included in the light-emitting element unit 12 can emit light with a brightness corresponding to the electrical signal.

[0092] Refer again Figure 2 The structure of pixels according to embodiments of this specification will be described.

[0093] The pixel circuit unit PCL may include a buffer film BFL, a transistor T, a gate insulating film GI, a first interlayer insulating film ILD1, a second interlayer insulating film ILD2, a protective layer PSV, a first conductive line CL1, a second conductive line CL2, a driving voltage line DVL, a first contact hole CH1, and a second contact hole CH2.

[0094] Transistor T may include a semiconductor pattern SCL, a source electrode SE, a drain electrode DE, and a gate electrode GE. Transistor T may be a reference. Figure 4 The first transistor T1 is described.

[0095] The buffer film BFL can be disposed on the substrate SUB. The buffer film BFL can protect the transistors T of the pixel circuit unit PCL from impurities.

[0096] The gate insulating film GI can be disposed on the buffer film BFL.

[0097] Semiconductor pattern SCL can be set on buffer film BFL.

[0098] The semiconductor pattern SCL can be a semiconductor layer. According to examples, the semiconductor pattern SCL can include at least one of polycrystalline silicon, amorphous silicon, and oxide semiconductor.

[0099] The semiconductor pattern SCL may include a first contact region that is electrically contacted with the source electrode SE and a second contact region that is electrically contacted with the drain electrode DE.

[0100] The first contact region and the second contact region can be semiconductor patterns doped with impurities. The region between the first contact region and the second contact region can be a channel region. The channel region can be an intrinsic semiconductor pattern in which no impurities are doped.

[0101] The gate insulating film GI can be disposed on the semiconductor pattern SCL. The gate insulating film GI can include inorganic materials. According to an example, the gate insulating film GI can include silicon nitride (SiN). x ), silicon oxide (SiO) x ), silicon nitride oxide (SiON) and aluminum oxide (AlO)x At least one of the following. According to an embodiment, the gate insulating film GI may include an organic material.

[0102] The gate electrode GE can be disposed on the gate insulating film GI.

[0103] The position of the gate electrode GE can correspond to the position of the channel region of the semiconductor pattern SCL. For example, the gate electrode GE can be disposed on the channel region of the semiconductor pattern SCL, and the gate insulating film GI can be interposed therebetween.

[0104] The first interlayer insulating film ILD1 can be disposed on the gate electrode GE. Similar to the gate insulating film GI, the first interlayer insulating film ILD1 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ), silicon nitride oxide (SiON) and aluminum oxide (AlO) x At least one of the following.

[0105] The source electrode SE and the drain electrode DE can be disposed on the first interlayer insulating film ILD1. The source electrode SE can pass through the gate insulating film GI and the first interlayer insulating film ILD1 to electrically contact the first contact area of ​​the semiconductor pattern SCL, and the drain electrode DE can pass through the gate insulating film GI and the first interlayer insulating film ILD1 to electrically contact the second contact area of ​​the semiconductor pattern SCL.

[0106] The second interlayer insulating film ILD2 can be disposed on the source electrode SE and the drain electrode DE. Similar to the first interlayer insulating film ILD1 and the gate insulating film GI, the second interlayer insulating film ILD2 may comprise an inorganic material. The inorganic material may include, for example, materials configured as those for the first interlayer insulating film ILD1 and the gate insulating film GI (e.g., silicon nitride (SiN)). x ), silicon oxide (SiO) x ), silicon nitride oxide (SiON) and aluminum oxide (AlO) x At least one of the materials selected from the above. According to an embodiment, the second interlayer insulating film ILD2 may include an organic material.

[0107] The first conductive line CL1 can be disposed on the second interlayer insulating film ILD2, and can be electrically connected to the source electrode SE through the contact hole passing through the second interlayer insulating film ILD2.

[0108] The second conductive line CL2 can be disposed on the second interlayer insulating film ILD2, and can be electrically connected to the drain electrode DE through the contact hole passing through the second interlayer insulating film ILD2.

[0109] The driving voltage line DVL can be disposed on the second interlayer insulating film ILD2. The driving voltage line DVL can be formed on the same layer as the first conductive line CL1 and the second conductive line CL2. The driving voltage line DVL can be as described above. Figure 4 The second power supply line PL2 is described.

[0110] The first conductive line CL1, the second conductive line CL2, and the driving voltage line DVL can be paths through which electrical signals can flow. The second conductive line CL2 can be a bridge electrode that electrically connects the drain electrode DE of the transistor T and some configuration of the display element unit DPL. According to an example, the first conductive line CL1, the second conductive line CL2, and the driving voltage line DVL can include at least one of molybdenum (Mo), tungsten (W), neodymium aluminum (AlNd), titanium (Ti), aluminum (Al), and silver (Ag).

[0111] The protective layer PSV can be disposed on the first conductive line CL1, the second conductive line CL2, and the driving voltage line DVL.

[0112] The protective layer PSV can be configured as an organic insulating film, an inorganic insulating film, or an organic insulating film disposed on an inorganic insulating film.

[0113] The protective layer PSV may include a first contact hole CH1 that exposes a region of the second conductive line CL2 and a second contact hole CH2 that exposes a region of the drive voltage line DVL.

[0114] The first contact hole CH1 can be the path through which the electrical signal supplied from transistor T is transmitted. The second contact hole CH2 can be the path through which power is supplied from the drive voltage line DVL.

[0115] The display element unit (DPL) may include a first connecting line CNL1, a first electrode EL1, a second connecting line CNL2, a second electrode EL2, a first insulating film INS1, a dam BNK, a light-emitting element LD, a second insulating film INS2, a first contact electrode CNE1, a second contact electrode CNE2, a first encapsulation layer ENC1, and a second encapsulation layer ENC2.

[0116] The first insulating film INS1 can be disposed on the protective layer PSV. Similar to the second interlayer insulating film ILD2, the first insulating film INS1 may include silicon nitride (SiN). x ), silicon oxide (SiO) x ), silicon nitride oxide (SiON) and aluminum oxide (AlO) x At least one of the following.

[0117] A light-emitting element (LD) can be disposed on a first insulating film INS1. According to an example, the first insulating film INS1 may have a predetermined groove, at least a portion of the light-emitting element LD may be in electrical contact with one end formed from the groove, and another portion of the light-emitting element LD may be in electrical contact with the other end formed from the groove.

[0118] At least a portion of the first insulating film INS1 may be disposed on the first connecting line CNL1, the second connecting line CNL2, the first electrode EL1 and / or the second electrode EL2 to stabilize the electrical connection and reduce external influences.

[0119] The first connection line CNL1 can be placed on the protective layer PSV.

[0120] The first connecting line CNL1 can be electrically connected to the first electrode EL1.

[0121] The second connecting line CNL2 can be arranged on the protective layer PSV. The second connecting line CNL2 and the first connecting line CNL1 can be formed on the same layer.

[0122] The second connecting line CNL2 can be electrically connected to the second electrode EL2.

[0123] The first connection line CNL1 can be partially removed, such that the corresponding pixel PXL and another pixel PXL adjacent to the corresponding pixel PXL are driven individually (or independently). The second connection line CNL2 can be provided commonly to the corresponding pixel PXL and other adjacent pixels PXL. For example, the second connection line CNL2 of the corresponding pixel PXL can be electrically connected to the second connection line CNL2 of each of the adjacent pixels PXL.

[0124] The first electrode EL1 can be disposed on the protective layer PSV. The first electrode EL1 can be formed on the same layer as the first connection line CNL1. Specifically, according to the example, the first electrode EL1 can be formed in the same configuration as the first connection line CNL1. The first electrode EL1 can be arranged parallel to the main surface of the protective layer PSV.

[0125] As referenced above Figure 4 As described, the first electrode EL1 can be a path through which the voltage of the first driving power supply VDD is applied, and can also be a path through which an electrical signal from the pixel driving circuit 14 is provided.

[0126] The second electrode EL2 can be disposed on the protective layer PSV. The second electrode EL2 and the second connecting line CNL2 can be formed on the same layer. Specifically, according to the example, the second electrode EL2 can be formed in the same configuration as the second connecting line CNL2. The second electrode EL2 can be arranged parallel to the main surface of the protective layer PSV.

[0127] As referenced above Figure 4 As described, the second electrode EL2 can be a path through which a voltage from the second drive power supply VSS can be applied.

[0128] The first electrode EL1 and the second electrode EL2 can reflect the light emitted from the light-emitting element LD in the display direction of the display device 1, thereby improving the luminous efficiency of the light-emitting element LD.

[0129] The light-emitting element (LD) can be disposed on the first insulating film INS1 between the first electrode EL1 and the second electrode EL2. The light-emitting element (LD) can have nanometer-scale or micrometer-scale dimensions.

[0130] A light-emitting element (LD) can be used as a light source for a pixel PXL that includes the LD. For example, the LD can be as described above. Figure 4 As described, it outputs predetermined light based on an electrical signal related to light emission applied from transistor T.

[0131] Reference Figure 5 Describe the detailed structure of the light-emitting element (LD).

[0132] Figure 5 This is a schematic perspective view showing a light-emitting element included in a pixel according to an embodiment of this specification.

[0133] Reference Figure 5 The light-emitting element (LD) may include a first semiconductor layer 120, a second semiconductor layer 140, an active layer 160, an insulating film 180, and an additional electrode 190.

[0134] The light-emitting element (LD) can have a shape that extends in the longitudinal direction. For example, the height L of the light-emitting element LD can be greater than the diameter D of the light-emitting element LD. For example, the light-emitting element LD can have a cylindrical shape, a rod shape, or a bar shape, but is not limited to a specific shape.

[0135] The first semiconductor layer 120 may include a semiconductor layer of a predetermined type. For example, the first semiconductor layer 120 may include an N-type semiconductor layer doped with a predetermined dopant.

[0136] The second semiconductor layer 140 may include a semiconductor layer of a different type than the first semiconductor layer 120. For example, if the first semiconductor layer 120 includes an N-type semiconductor layer, the second semiconductor layer 140 may include a P-type semiconductor layer doped with a dopant different from a predetermined dopant.

[0137] The first semiconductor layer 120 and the second semiconductor layer 140 may include at least one semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN.

[0138] The first semiconductor layer 120 and the second semiconductor layer 140 may have different heights from each other in the longitudinal direction of the light-emitting element LD. Referring to the example... Figure 5 The height of the first semiconductor layer 120 can be greater than the height of the second semiconductor layer 140.

[0139] The active layer 160 can be disposed between the first semiconductor layer 120 and the second semiconductor layer 140. The active layer 160 can have a single or multiple quantum well structures.

[0140] When an electric field with a voltage equal to or greater than a predetermined voltage is applied across the light-emitting element LD, electron-hole pairs can combine in the active layer 160, and light can be emitted. Using this principle, the light-emitting element LD including the active layer 160 can be included in the pixel PXL and can be used in various display devices.

[0141] The auxiliary electrode 190 can be disposed on the first semiconductor layer 120 or the second semiconductor layer 140. The auxiliary electrode 190 can be an ohmic contact electrode or a Schottky contact electrode.

[0142] The additional electrode 190 may include, but is not limited to, at least one of chromium (Cr), titanium (Ti), aluminum (Al), gold (Au), nickel (Ni) and their oxides, indium tin oxide (ITO).

[0143] The insulating film 180 may cover at least a portion of the outer surface of the light-emitting element LD. The insulating film 180 may prevent electrical short circuits and contamination that may occur when the active layer 160 comes into contact with materials other than the first semiconductor layer 120 and the second semiconductor layer 140 (especially other conductive materials).

[0144] The insulating film 180 may include a transparent insulating material. According to an example, the insulating film 180 may include silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon nitride oxide (SiON), aluminum oxide (AlO) x At least one of ) and titanium oxide (TiO2).

[0145] Refer again Figure 2 The second insulating film INS2 can be disposed on the light-emitting element LD. The second insulating film INS2 can be formed to cover at least one region of the light-emitting element LD corresponding to the active layer 160.

[0146] However, according to an embodiment, at least a portion of the second insulating film INS2 may be disposed on the rear surface of the light-emitting element LD. During the process of forming the second insulating film INS2 on the light-emitting element LD, the second insulating film INS2 formed on the rear surface of the light-emitting element LD may fill the empty gap between the first insulating film INS1 and the light-emitting element LD.

[0147] When viewed from above, the cross-sectional area of ​​the second insulating film INS2 can be reduced as it is further separated from the light-emitting element LD. In this case, the cross-section of the second insulating film INS2 can have a trapezoidal shape in the cross-sectional view. However, the shape of the second insulating film INS2 is not limited to the example above and can be set to any of the different shapes.

[0148] The second insulating film INS2 may include at least one of organic and inorganic materials. If the second insulating film INS2 includes an organic material, it may be an organic insulating film.

[0149] The first contact electrode CNE1 and the second contact electrode CNE2 can be disposed on the first insulating film INS1.

[0150] Reference Figure 2 When in the first direction (the first direction described below can refer to facing) Figure 2 When viewed from the direction of the pixel shown, each of the first contact electrode CNE1 and the second contact electrode CNE2 can be disposed on a side surface of the light-emitting element LD. The first contact electrode CNE1 can directly contact the exposed surface of one end of the light-emitting element LD, and the second contact electrode CNE2 can directly contact the exposed surface of the other end of the light-emitting element LD.

[0151] The first contact electrode CNE1 and the second contact electrode CNE2 may have a predetermined height in the upward direction relative to the main surface of the light-emitting element LD. The first contact electrode CNE1 may be electrically connected to the first electrode EL1 through a contact hole passing through the first insulating film INS1, and the second contact electrode CNE2 may be electrically connected to the second electrode EL2 through a contact hole passing through the first insulating film INS1.

[0152] Each of the first contact electrode CNE1 and the second contact electrode CNE2 can be electrically connected to the light-emitting element LD. According to an example, the first contact electrode CNE1 and the second contact electrode CNE2 can be at least any one of conductive materials including indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO).

[0153] According to a specific embodiment, the first contact electrode CNE1 and the second contact electrode CNE2 may comprise the same material. The first contact electrode CNE1 and the second contact electrode CNE2 may have the same composition.

[0154] The electrical signal applied through the first electrode EL1 can be provided to the light-emitting element LD through the first contact electrode CNE1. The applied electrical signal can be provided from the transistor T through the first contact hole CH1.

[0155] As referenced above Figure 4 As described, the light-emitting element LD can emit light based on an electrical signal related to light emission applied through the transistor T.

[0156] The electrical signal applied through the second electrode EL2 can be provided to the light-emitting element LD through the second contact electrode CNE2.

[0157] A dam portion (BNK) can be disposed on the first insulating film (INS1). The dam portion (BNK) can define the emission region of the pixel (PXL). Specifically, the pixel (PXL) may include a dam portion (BNK) disposed in a non-emission region surrounding the emission region. For example, the dam portion (BNK) may be a pixel defining film.

[0158] The embankment BNK may include at least one of organic and inorganic materials.

[0159] The first encapsulation layer ENC1 can be disposed on the first insulating film INS1 corresponding to the positions of the first contact electrode CNE1 and the second contact electrode CNE2.

[0160] The first encapsulation layer ENC1 may include a photosensitive material. For example, the first encapsulation layer ENC1 may be a photoresist applied in a photolithography process for the first contact electrode CNE1 and the second contact electrode CNE2.

[0161] The first encapsulation layer ENC1 may include a first encapsulation region 106 and a second encapsulation region 108. The thickness of the first encapsulation region 106 may be less than the thickness of the second encapsulation region 108. (Refer to the following...) Figure 11 Describe the contents of the first packaging region 106 and the second packaging region 108.

[0162] The second encapsulation layer ENC2 may be disposed on the first encapsulation layer ENC1. The second encapsulation layer ENC2 may include at least one of inorganic and organic materials. However, the second encapsulation layer ENC2 may not be included in the pixel PXL as needed.

[0163] The first encapsulation layer ENC1 and / or the second encapsulation layer ENC2 can protect the display element unit DPL from external influences.

[0164] Figure 3 This is a schematic plan view showing the upper surface of a pixel according to an embodiment of this specification.

[0165] Reference Figure 3 The pixel PXL may include light-emitting elements (LDs) arranged in a parallel structure for alignment electrodes. For example, the first electrode EL1 and the second electrode EL2 may be used as alignment electrodes for the light-emitting elements LD.

[0166] The light-emitting element (LD) included in pixel PXL can be electrically connected to a first contact electrode CNE1 electrically connected to a first electrode EL1, and electrically connected to a second contact electrode CNE2 electrically connected to a second electrode EL2. As described above, the first electrode EL1 can receive a predetermined electrical signal through a first contact hole CH1. The second electrode EL2 can receive a predetermined electrical signal through a second contact hole CH2.

[0167] The second connection line CNL2 can provide a path for electrical connection to at least a portion of the adjacent pixel PXL.

[0168] At least a portion of the second insulating film INS2 may be disposed on the light-emitting element LD. The first contact electrode CNE1 and the second contact electrode CNE2 may not be disposed on the upper surface of the second insulating film INS2. For example, in a plan view, the first contact electrode CNE1 and the second contact electrode CNE2 may not overlap with the second insulating film INS2.

[0169] However, the arrangement of light-emitting elements (LDs), electrodes, etc., is not limited to the above references. Figure 3 The described example can be used to implement setting relationships according to various modifiable implementation methods.

[0170] In the following text, we will refer to... Figures 6 to 11 , Figure 12A and Figure 12B This specification describes a method for manufacturing pixels according to embodiments thereof. However, the technical features related to the method of manufacturing pixels can be explained with reference to the above description, and repeated content may be omitted.

[0171] Figure 6 This is a flowchart illustrating a method for manufacturing pixels according to an embodiment of this specification.

[0172] Figures 7 to 11 This is a schematic cross-sectional view of a pixel according to an embodiment of this specification, showing views at specific points in time during the execution of the pixel manufacturing method.

[0173] Figure 12A and Figure 12B This is a schematic cross-sectional view of a pixel according to an embodiment of this specification, showing some pixels with modified structures.

[0174] Specifically, in Figures 7 to 11 , Figure 12A and Figure 12B The view of pixels shown in the figure according to an embodiment of this specification is along... Figure 3 A schematic cross-sectional view taken from line I-I'.

[0175] A method for manufacturing a pixel according to embodiments of this specification may include providing a substrate (S110), forming a first insulating film (S120), positioning a light-emitting element on the first insulating film (S130), forming a second insulating film (S140), depositing a contact electrode such that at least the upper portion of the second insulating film is covered (S160), applying a photosensitive material (S180), removing a portion of the photosensitive material using a mask including a halftone region (S190), and removing a portion of the contact electrode (S195).

[0176] When providing the substrate (S110), a predetermined substrate may be provided. The substrate may represent the above reference. Figure 2 The substrate SUB is described. When providing the substrate (S110), the pixel circuit unit PCL can be formed on the predetermined substrate SUB.

[0177] Although not shown in the figure, the formation of the first electrode EL1 and the second electrode EL2 can be performed after the substrate is provided (S110).

[0178] During the formation of the first insulating film (S120), the first insulating film INS1 can be formed on the substrate SUB on which the pixel circuit unit PCL is formed. The first insulating film INS1 formed on the layer on which the first electrode EL1 or the second electrode EL2 is not disposed is formed at a different height than the first insulating film INS1 formed on the layer on which the first electrode EL1 or the second electrode EL2 is disposed, and thus the first insulating film INS1 can have a height difference.

[0179] When positioning the light-emitting element (S130), the light-emitting element LD can be placed on the first insulating film INS1.

[0180] Before positioning the light-emitting element (S130), a predetermined embankment (see reference) can be executed. Figure 2 The arrangement of the "BNK" (Blocks) facilitates the arrangement of the light-emitting elements (LDs). (Refer to...) Figure 12B A dam portion BNK can be formed on the pixel circuit unit PCL, and a first electrode EL1 and / or a second electrode EL2 can be formed on the dam portion BNK. The first electrode EL1 and / or the second electrode EL2 formed on the dam portion BNK can guide the light emitted from the light-emitting element LD in a predetermined direction to improve the luminous efficiency of the light-emitting element LD. However, this step can be omitted if necessary.

[0181] During the formation of the second insulating film (S140), the second insulating film INS2 can be disposed on the light-emitting element LD. The second insulating film INS2 can be disposed on the light-emitting element LD such that the first end of the light-emitting element LD and the second end opposite to the first end are open (see reference). Figure 7 ).

[0182] During the deposition of the contact electrode (S160), a predetermined contact electrode CNE0 can be deposited on the material obtained during the formation of the second insulating film (S140), for example, on a first insulating film INS1 on which the second insulating film INS2 is disposed. (Refer to...) Figure 8 The predetermined contact electrode CNE0 can be disposed on the first insulating film INS1, and can also be disposed on the externally open portion of the light-emitting element LD and the externally open portion of the second insulating film INS2.

[0183] When applying the photosensitive material (S180), the encapsulation layer ENC0 can be applied onto the material obtained by depositing the contact electrode (S160), for example, onto the predetermined contact electrode CNE0. The encapsulation layer ENC0 may include, as referenced above. Figure 2 The first encapsulation layer ENC1 describes at least one photosensitive material.

[0184] When removing a portion of the photosensitive material (S190), the first encapsulation layer ENC1 can be formed by performing exposure and development processes on at least a portion of the area where the photosensitive material was applied. A halftone mask 100 can be used during the exposure and development process performed in this step.

[0185] The halftone mask 100 may include a halftone region 100a and a fulltone region 100b. The halftone mask 100 may have a first transmittance in the halftone region 100a and a second transmittance less than the first transmittance in the fulltone region 100b.

[0186] The halftone region 100a of the halftone mask 100 may correspond to the upper surface of the second insulating film INS2. Based on the main surface of the substrate SUB, the length L2 of the halftone region 100a may be at least equal to or greater than the length L1 of the upper surface of the second insulating film INS2.

[0187] The length L2 of the halftone region 100a can be greater than the sum of the length L1 of the upper surface of the second insulating film INS2, the thickness of the predetermined contact electrode CNE0 disposed on the side surface of the second insulating film INS2, and the thickness of the predetermined contact electrode CNE0 disposed on the other side surface of the second insulating film INS2.

[0188] When removing a portion of the photosensitive material (S190), the encapsulation layer ENC0 corresponding to the halftone region 100a of the halftone mask 100 can be removed, and the above reference can be formed. Figure 2 The first encapsulation layer ENC1 is described. In this step, a portion of the encapsulation layer ENC0 can be removed, and the predetermined contact electrode CNE0 disposed beneath it can be exposed to the outside.

[0189] When removing a portion of the contact electrode (S195), an etching process is performed using the first encapsulation layer ENC1 as an etching mask, and the predetermined contact electrode CNE0 exposed to the outside can be removed. When a portion of the predetermined contact electrode CNE0 is removed, at least a portion of the second insulating film INS2 can be exposed to the outside.

[0190] According to an embodiment, when the predetermined contact electrode CNE0 exposed to the outside is removed, a portion of the second insulating film INS2 disposed below the predetermined contact electrode CNE0 can be removed. The height of the second insulating film INS2 can vary depending on the extent to which the portion of the second insulating film INS2 disposed below the predetermined contact electrode CNE0 is removed. The height of the second insulating film INS2 can correspond to the height of the first contact electrode CNE1 and / or the height of the second contact electrode CNE2.

[0191] The height of the second insulating film INS2 can be equal to or greater than the height of the first contact electrode CNE1 and / or the height of the second contact electrode CNE2. According to an embodiment, the height of the second insulating film INS2 can be equal to the height of the first contact electrode CNE1 and the height of the second contact electrode CNE2 (see reference). Figure 11 As another example, according to a modified implementation, the height of the second insulating film INS2 can be greater than the height of the first contact electrode CNE1 and the height of the second contact electrode CNE2 (see reference). Figure 12A ).

[0192] The portion of the predetermined contact electrode CNE0 that is removed and exposed to the outside in this step can be disposed on the upper surface of the second insulating film INS2.

[0193] like Figure 11 , Figure 12A and Figure 12B As shown, the predetermined contact electrode CNE0, from which a region has been removed, can be configured to be in the shape of a first contact electrode CNE1 and a second contact electrode CNE2 that are not electrically in contact with each other on the upper surface of the second insulating film INS2. The first contact electrode CNE1 can be as described above. Figure 2 and Figure 3 The first contact electrode CNE1 is described, and the second contact electrode CNE2 can be as described above. Figure 2 and Figure 3 The second contact electrode CNE2 is described.

[0194] For example, the first contact electrode CNE1 and the second contact electrode CNE2 can be formed simultaneously. According to this embodiment, the first contact electrode CNE1 and the second contact electrode CNE2 may not be formed at at least at different times.

[0195] As described above, since the first contact electrode CNE1 and the second contact electrode CNE2 are formed by using the first encapsulation layer ENC1 (a portion of which is removed) as an etching mask, the upper surface of the second insulating film INS2 and at least a portion of the first encapsulation layer ENC1 can be formed on the same plane or layer.

[0196] The first contact electrode CNE1 may have a first point 102 that is in physical contact with the second insulating film INS2 and is furthest from the first surface of the light-emitting element LD.

[0197] The first surface can refer to the upper surface of the light-emitting element LD on which the second insulating film INS2 is disposed.

[0198] The second contact electrode CNE2 may have a second point 104 that is in physical contact with the second insulating film INS2 and is furthest from the first surface.

[0199] The shortest distance between the first point 102 and the first surface can be equal to the shortest distance between the second point 104 and the first surface, or less than the shortest distance between the second point 104 and the first surface by a predetermined difference.

[0200] Therefore, the extension line between the first point 102 and the second point 104 can be parallel to the first surface of the light-emitting element LD. For example, the top surface between the first point 102 and the second point 104 can be parallel to the first surface of the light-emitting element LD.

[0201] As described above, the first contact electrode CNE1 and the second contact electrode CNE2 can be in no electrical contact with each other on the upper surface of the second insulating film INS2. Therefore, the height of the second insulating film INS2 relative to the first surface of the light-emitting element LD can be equal to the shortest distance between the first point 102 and the first surface. As another example, the height of the second insulating film INS2 relative to the first surface of the light-emitting element LD can be equal to the shortest distance between the second point 104 and the first surface.

[0202] The height of the area corresponding to the halftone region 100a of the halftone mask 100 can be the same. The height of the first encapsulation layer ENC1 disposed in the area corresponding to the halftone region 100a can also be the same as that of the substrate SUB.

[0203] The first encapsulation layer ENC1 may include a first encapsulation region 106 and a second encapsulation region 108. The first encapsulation region 106 may be closer to the second insulating film INS2 than the second encapsulation region 108. The thickness of the first encapsulation region 106 of the first encapsulation layer ENC1 may be less than the thickness of the second encapsulation region 108 of the first encapsulation layer ENC1.

[0204] The height of the first encapsulation region 106 of the first encapsulation layer ENC1 can be equal to the height of the first contact electrode CNE1 and the height of the second contact electrode CNE2.

[0205] The upper surface of the first encapsulation region 106 of the first encapsulation layer ENC1 can be formed on the same plane as the upper surface of the second insulating film INS2.

[0206] After removing a portion of the contact electrode (S195), the first encapsulation layer ENC1 may not need to be removed. According to an embodiment, the first encapsulation layer ENC1 can be used as an external protective layer for the pixel.

[0207] In the following text, we will refer to... Figures 13 to 18 This specification describes a pixel and a method for manufacturing the pixel according to another embodiment. However, content that may be repeated from the description of the above embodiment may be omitted, and the technical content should be explained with reference to the above embodiment and detailed description.

[0208] Figure 13 This is a schematic plan view showing the upper surface of a pixel according to another embodiment of this specification.

[0209] Figures 14 to 18 This is a schematic cross-sectional view of a pixel according to another embodiment of this specification, showing specific points in time during the execution of the method for manufacturing the pixel.

[0210] Specifically, in Figures 14 to 18 The pixel-related view shown in this specification, according to another embodiment of the present specification, can be along... Figure 13 The sectional view taken from line II-II'.

[0211] Reference Figure 13 In the plan view, the second insulating film INS2 corresponding to the position of the light-emitting element LD may not overlap with the first contact electrode CNE1 and the second contact electrode CNE2. However, the first contact electrode CNE1 and the second contact electrode CNE2 may be disposed on the second insulating film INS2 corresponding to the first electrode EL1 and the second electrode EL2.

[0212] Reference Figures 14 to 18According to a pixel PXL according to another embodiment of this specification, the second insulating film INS2 can be positioned in the region other than the two ends of the light-emitting element LD. At least a portion of the second insulating film INS2 can be formed on the light-emitting element LD, and at least another portion of the second insulating film INS2 can be formed on the first insulating film INS1.

[0213] In this embodiment, in a plan view, a region of the second insulating film INS2 may partially overlap with each of the first contact electrode CNE1 and the second contact electrode CNE2. In a plan view, a region of the second insulating film INS2 may partially overlap with the first electrode EL1 and the second electrode EL2, or may not partially overlap with the first electrode EL1 and the second electrode EL2.

[0214] The second insulating film INS2 disposed on the light-emitting element LD and the second insulating film INS2 disposed on the first insulating film INS1 can be integral with each other and can be connected to each other. In the plan view, the second insulating film INS2 disposed on the light-emitting element LD can extend in a direction intersecting the alignment direction of the light-emitting element LD. In the plan view, the second insulating film INS2 disposed on the first insulating film INS1 can be configured to surround (or enclose) the light-emitting element LD disposed between the first electrode EL1 and the second electrode EL2.

[0215] Reference Figures 14 to 16 A pixel circuit unit PCL can be disposed on the substrate SUB, and a first electrode EL1 and a second electrode EL2 can be disposed on the pixel circuit unit PCL. Then, a first insulating film INS1 can be disposed, and a light-emitting element LD can be arranged on the first insulating film INS1. Then, a second insulating film INS2 can be formed on the first insulating film INS1 on which the light-emitting element LD is disposed.

[0216] After aligning the light-emitting element LD in the pixel PXL, the second insulating film INS2 can be formed by applying an insulating material layer onto the first insulating film INS1 and removing a portion of the insulating material layer using a mask. At least a portion of the second insulating film INS2 can be disposed on the first insulating film INS1 located in the region corresponding to the first electrode EL1, and another portion of the second insulating film INS2 can be disposed on the first insulating film INS1 located in the region corresponding to the second electrode EL2, and yet another portion of the second insulating film INS2 can be disposed on the light-emitting element LD.

[0217] After forming the second insulating film INS2, a predetermined contact electrode CNE0 can be provided, and then an encapsulation layer ENC0 can be applied to the predetermined contact electrode CNE0.

[0218] Reference Figure 17 In another embodiment of the method for manufacturing pixels according to this specification, a halftone mask 200 may be used. The halftone mask 200 may include a halftone region 200a and a full-tone region 200b.

[0219] The length L1 of the upper surface of the second insulating film INS2 disposed on the light-emitting element LD can be at least less than the length L2 of the corresponding halftone region 200a.

[0220] Reference Figure 18 According to this embodiment, the second insulating film INS2 disposed on the first insulating film INS1 in the region other than the light-emitting element LD can be used as a reflective member. Together with the first electrode EL1 and the second electrode EL2, it guides the light emitted from the light-emitting element LD in a desired direction to improve the luminous efficiency of the pixel PXL. Therefore, additional configuration for the reflective member can be omitted (refer to the example above). Figure 12B The described dike section (BNK) can thus reduce process costs.

[0221] The above description is merely an illustration of the technical spirit of this disclosure, and those skilled in the art will be able to make various modifications and changes without departing from the basic characteristics of this disclosure. Therefore, the embodiments of this disclosure described above can be implemented individually or in combination with each other.

[0222] Therefore, the embodiments disclosed herein are not intended to limit the technical spirit of this disclosure, but rather to describe it, and the scope of the technical spirit of this disclosure is not limited by these embodiments. The scope of protection of this disclosure should be interpreted by the appended claims, and it should be understood that all technical spirit within the equivalent scope is included within the scope of this disclosure.

Claims

1. Pixel, including: The first insulating film is disposed on the substrate; A light-emitting element is disposed on the first insulating film; A second insulating film is disposed on the light-emitting element to cover at least a portion of the light-emitting element; First contact electrode and second contact electrode, each of the first contact electrode and the second contact electrode includes at least a portion disposed on the first insulating film and electrically connected to the light-emitting element; as well as The encapsulation layer includes a photosensitive material, wherein, Each of the first contact electrode and the second contact electrode is disposed on a corresponding side surface of the side surface of the second insulating film, and does not contact each other on the upper surface of the second insulating film. The encapsulation layer is disposed on the first contact electrode and the second contact electrode. The encapsulation layer is not disposed on the second insulating film.

2. The pixel according to claim 1, wherein, Relative to the main surface of the light-emitting element, the height of the second insulating film is equal to or greater than the height of the first contact electrode and the height of the second contact electrode.

3. The pixel according to claim 2, wherein, The first contact electrode includes a distal end that is in physical contact with the second insulating film and spaced apart from the light-emitting element. The second contact electrode includes a distal end that is in physical contact with the second insulating film and spaced apart from the light-emitting element, and Each of the distal ends of the first contact electrode and the second contact electrode is spaced equidistant from the substrate.

4. The pixel according to claim 3, wherein, The top surface between the distal end of the first contact electrode and the distal end of the second contact electrode is parallel to the main surface of the substrate.

5. The pixel according to claim 1, wherein, The first contact electrode and the second contact electrode are disposed on the light-emitting element and are not disposed on the upper surface of the second insulating film.

6. The pixel according to claim 1, wherein, The encapsulation layer includes a first encapsulation region and a second encapsulation region. Compared to the second encapsulation region, the first encapsulation region is adjacent to the second insulating film, and The first encapsulation region of the encapsulation layer has the same height as the first contact electrode and the second contact electrode.

7. The pixel according to claim 1, wherein, The second insulating film includes a first material, and The pixels also include: A third insulating film and a fourth insulating film, each of the third insulating film and the fourth insulating film being disposed on the first insulating film, comprising the first material, and spaced apart from each other.

8. The pixel according to claim 1, wherein, At least a portion of the first contact electrode is disposed on the first side surface of the second insulating film, and At least a portion of the second contact electrode is disposed on a second side surface of the second insulating film, the second side surface being opposite to the first side surface.

9. The pixel according to claim 1, wherein, The encapsulation layer, the first contact electrode, the second contact electrode, and the second insulating film are formed by photolithography using a mask that includes at least a halftone region. During the photolithography process, in a planar view, the upper surface of the second insulating film corresponds to the halftone region of the mask.

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