Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method that can reliably prevent cleaning fluid containing foreign matter from falling from the polishing head onto the wafer. The substrate processing apparatus includes a rotating holding mechanism (10), a polishing head (50), and a head cleaning device (200). During and / or after polishing of the substrate (W), the head cleaning device supplies polishing fluid to the polishing head (50) to clean the polishing head (50).

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method for processing substrates such as wafers. Background Technology

[0002] Semiconductor devices are formed on the surface (device surface) of a wafer. When foreign matter (particles) such as polishing debris adheres to such a wafer, the wafer becomes contaminated, resulting in a decrease in yield during semiconductor manufacturing. Therefore, from the perspective of improving yield, managing the surface condition of the wafer to prevent foreign matter contamination is important.

[0003] There are methods that transport wafers by holding only the periphery of the wafer with an arm. In such methods, unwanted film remaining on the periphery of the wafer may peel off and adhere to the wafer surface during various processes, resulting in a decrease in yield. Therefore, from the viewpoint of improving yield, it is important to remove the unwanted film formed on the periphery of the wafer. To this end, a substrate processing apparatus may be equipped with a bevel polishing device that polishes the periphery of the wafer to remove the unwanted film.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-161721

[0007] Patent Document 2: Japanese Patent Application Publication No. 2019-216207

[0008] Patent Document 3: Japanese Patent Application Publication No. 2016-28845

[0009] Patent Document 4: Japanese Patent Application Publication No. 2017-132034

[0010] The technical problem that the invention aims to solve

[0011] However, when grinding the periphery of the wafer, foreign matter such as grinding debris is generated, which may adhere to the grinding head of the bevel grinding apparatus. In this state, when grinding of the periphery of the wafer continues, the liquid used to clean the wafer may adhere to the grinding head, and the liquid containing foreign matter may fall from the grinding head onto the wafer. Summary of the Invention

[0012] Therefore, the object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reliably prevent liquid containing foreign matter from falling from the grinding head onto the wafer.

[0013] Technical means for solving technical problems

[0014] In one embodiment, a substrate processing apparatus is provided, comprising: a rotation holding mechanism that holds and rotates a substrate; a polishing head that presses a polishing tool against the periphery of the substrate to polish the periphery of the substrate; and a head cleaning device that supplies cleaning fluid to the polishing head during and / or after polishing the substrate to clean the polishing head.

[0015] In one embodiment, the substrate processing apparatus includes a tilting mechanism that tilts the polishing head, and when the polishing head is positioned below the substrate by the tilting mechanism, the head cleaning apparatus supplies cleaning fluid to the polishing head.

[0016] In one embodiment, the substrate processing apparatus includes a tilting mechanism that tilts the polishing head. After the head cleaning device supplies the cleaning fluid to the polishing head, the tilting mechanism continuously changes the tilt angle of the polishing head to remove the cleaning fluid.

[0017] In one embodiment, the head cleaning device supplies the cleaning fluid to the grinding head each time a substrate is ground.

[0018] In one embodiment, the head cleaning device is positioned above the grinding head and supplies the cleaning fluid to the grinding head from directly above it.

[0019] In one embodiment, the cleaning solution is any one of pure water, conductive water, and a surfactant solution.

[0020] In one embodiment, the substrate processing apparatus includes a vibration device that vibrates the polishing head. After the head cleaning device supplies the cleaning fluid to the polishing head, the vibration device vibrates the polishing head to remove the cleaning fluid.

[0021] In one embodiment, the substrate processing apparatus includes a gas jetting device that jets pressurized gas onto the polishing head. After the head cleaning device supplies the cleaning fluid to the polishing head, the gas jetting device jets pressurized gas onto the polishing head to remove the cleaning fluid.

[0022] In one embodiment, the substrate processing apparatus includes a suction device that suctions cleaning fluid adhering to the polishing head. After the head cleaning device supplies the cleaning fluid to the polishing head, the suction device suctions the cleaning fluid adhering to the polishing head, thereby removing the cleaning fluid.

[0023] In one embodiment, the substrate processing apparatus includes a circular motion mechanism that causes the polishing head to move in a circular motion. After the head cleaning device supplies the cleaning fluid to the polishing head, the circular motion mechanism causes the polishing head to move in a circular motion to remove the cleaning fluid.

[0024] In one embodiment, a substrate processing method is provided, comprising: a substrate rotation step, wherein the substrate is rotated while being held; a grinding step, wherein a grinding tool is pressed against the periphery of the substrate to grind the periphery of the substrate; and a head cleaning step, wherein a cleaning fluid is supplied to the grinding head during and / or after the grinding of the substrate to clean the grinding head.

[0025] In one embodiment, the head cleaning process includes the following step: supplying the cleaning fluid to the grinding head when the grinding head is positioned below the substrate.

[0026] In one embodiment, the substrate processing method includes a tilting step in which, after the cleaning fluid is supplied to the polishing head, the tilt angle of the polishing head is continuously changed to remove the cleaning fluid.

[0027] In one approach, the head cleaning process is performed each time a substrate is polished.

[0028] In one embodiment, the head cleaning process includes supplying the cleaning fluid to the grinding head from directly above it.

[0029] In one embodiment, the cleaning solution is any one of pure water, conductive water, and a surfactant solution.

[0030] In one embodiment, the substrate processing method includes a vibration step in which, after the cleaning fluid is supplied to the polishing head, the polishing head is vibrated to remove the cleaning fluid.

[0031] In one embodiment, the substrate processing method includes a spraying step in which, after the cleaning fluid is supplied to the polishing head, pressurized gas is sprayed onto the polishing head to remove the cleaning fluid.

[0032] In one embodiment, the substrate processing method includes an aspiration step in which, after the cleaning fluid is supplied to the polishing head, the cleaning fluid adhering to the polishing head is aspirated to remove the cleaning fluid.

[0033] In one embodiment, the substrate processing method includes a circular motion step in which, after the cleaning fluid is supplied to the polishing head, the polishing head is made to perform a circular motion to remove the cleaning fluid.

[0034] The effects of the invention

[0035] The substrate processing apparatus includes a head cleaning device for cleaning the polishing head. Therefore, the head cleaning device can prevent foreign matter (liquid containing foreign matter) from adhering to the polishing head, or can remove foreign matter adhering to the polishing head. Attached Figure Description

[0036] Figure 1 middle, Figure 1 (a) and Figure 1 (b) is an enlarged cross-sectional view showing the periphery of the substrate.

[0037] Figure 2 This is a schematic diagram illustrating one embodiment of a substrate processing apparatus.

[0038] Figure 3 Viewed from above Figure 2 A schematic diagram of the substrate processing apparatus shown.

[0039] Figure 4 This is a schematic diagram showing the state in which the grinding head and the circular motion mechanism are tilted downwards by the tilting mechanism.

[0040] Figure 5 This is a schematic diagram showing the state in which the grinding head and the circular motion mechanism are tilted upwards by the tilting mechanism.

[0041] Figure 6 This is a schematic diagram illustrating one embodiment of a circular motion mechanism for causing a grinding tool support structure to perform circular motion.

[0042] Figure 7 This is a diagram showing a vibrating device that makes the grinding head vibrate.

[0043] Figure 8 This is a diagram showing a gas injection device that injects pressurized gas into a grinding head.

[0044] Figure 9 This diagram shows a suction device that draws in cleaning fluid adhering to the grinding head.

[0045] Symbol Explanation

[0046] 4. Holding platform

[0047] 5-axis

[0048] 7. Holding platform drive mechanism

[0049] 10 Rotary retaining mechanism

[0050] 28 Liquid supply nozzle

[0051] 31 Grinding belt

[0052] 41 Grinding equipment supply and recycling organization

[0053] 43 Supply drum

[0054] 44 Recycling Rolls

[0055] 50 Grinding Head

[0056] 52 Pressing Mechanism

[0057] 52a Pressing Pad

[0058] 52b cylinder

[0059] 53a~53h guide rollers

[0060] 61 Circular motion mechanism

[0061] 62 motors

[0062] 63 Rotation axis

[0063] 63a axis

[0064] 65 Eccentric Rotational Body

[0065] 67 bearing

[0066] 69 units

[0067] 70 Crank

[0068] 71 Abutment

[0069] 72 First Axis

[0070] 72a axis

[0071] 73 Second Axis

[0072] 73a axis

[0073] 75 bearing

[0074] 77 bearing

[0075] 79 Support components

[0076] 81 Tilting Mechanism

[0077] 82 Rotary drive device

[0078] 85 crank arm

[0079] 89 Retaining components

[0080] 100 next door

[0081] 105 Grinding head moving mechanism

[0082] 180 Motion Control Department

[0083] 180a storage device

[0084] 180b processing device

[0085] 200-head cleaning device

[0086] 201 Cleaning Arm

[0087] 201a Cleaning Fluid Circuit

[0088] 202 Cleaning Nozzle

[0089] 205 On / off valve

[0090] 210 Vibration device

[0091] 215 Gas injection device

[0092] 216 Jet Arm

[0093] 217 Injection Nozzle

[0094] 218 On / off valve

[0095] 219 Gas Flow Path

[0096] 220 Suction Device

[0097] 221 Headgear

[0098] 221a slot

[0099] 221b Suction Hole

[0100] 222 Attraction Route

[0101] 223 On / off valve Detailed Implementation

[0102] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0103] In this specification, the peripheral portion of the substrate is defined as the region including: a beveled portion located at the outermost periphery of the substrate, a top edge portion and a bottom edge portion located radially inside the beveled portion, and a notch portion formed in the peripheral portion of the substrate to determine the crystal orientation.

[0104] Figure 1 (a) and Figure 1 (b) is an enlarged cross-sectional view showing the periphery of the substrate. More specifically, Figure 1 (a) is a cross-sectional view of a so-called straight substrate. Figure 1 (b) is a cross-sectional view of the so-called arc-shaped substrate. Figure 1In wafer W (an example of a substrate) of (a), the beveled portion is the outermost peripheral surface of wafer W (represented by symbol B), which is composed of an upper beveled portion (upper beveled portion) P, a lower beveled portion (lower beveled portion) Q, and a side portion (top) R. Figure 1 In wafer W of (b), the beveled portion forms the outermost peripheral surface of wafer W and is a portion with a curved cross-section (represented by the symbol B). The top edge is a flat portion E1 located radially inward compared to the beveled portion B. The bottom edge is located on the opposite side of the top edge and is a flat portion E2 located radially inward compared to the beveled portion B. The top edge E1 contains the area where the device is formed.

[0105] Figure 2 This is a schematic diagram illustrating one embodiment of a substrate processing apparatus. Figure 2 The substrate processing apparatus shown is suitable for use as a bevel grinding apparatus for grinding the beveled portion of a substrate's peripheral area. For example... Figure 2 As shown, the polishing apparatus includes: a rotation holding mechanism 10 that holds a wafer W, which is the object to be polished, and rotates the wafer W; and a polishing head 50 that polishes the inclined surface of the wafer W held in the rotation holding mechanism 10 and removes foreign objects and scratches from the inclined surface of the wafer W.

[0106] Figure 2 This indicates that the rotary holding mechanism 10 is holding the wafer W. The rotary holding mechanism 10 includes: a holding stage 4 that holds the wafer W by vacuum adsorption, a shaft 5 connected to the center of the holding stage 4, and a holding stage drive mechanism 7 connected to the lower end of the shaft 5.

[0107] The holding stage drive mechanism 7 includes a motor and a cylinder (not shown) for rotating and moving the holding stage 4 vertically. That is, the holding stage drive mechanism 7 is configured to enable the holding stage 4 to rotate around its axis Cr and move vertically along the axis Cr.

[0108] The wafer W is placed on the upper surface of the holding stage 4 by a transport mechanism (not shown) with its center O1 located on the axis Cr of the holding stage 4. The wafer W is held on the upper surface of the holding stage 4 with its surface (device side) facing upward. With this structure, the rotation holding mechanism 10 can rotate the wafer W about the axis Cr of the holding stage 4 (i.e., the axis of the wafer W) and cause the wafer W to rise and fall along the axis Cr of the holding stage 4.

[0109] like Figure 2As shown, the substrate processing apparatus further includes: a partition wall 100, a polishing tool supply and recovery mechanism 41 for supplying polishing belt 31 to the polishing head 50 and recovering the polishing belt 31 from the polishing head 50, and a liquid supply nozzle 28 for supplying liquid to the surface of the wafer W. The rotation holding mechanism 10, the polishing head 50, and the liquid supply nozzle 28 are disposed inside the partition wall 100, and the polishing tool supply and recovery mechanism 41 is disposed outside the partition wall 100.

[0110] The grinding tool supply and recovery mechanism 41 includes a supply spool 43 for supplying the grinding belt 31 to the grinding head 50 and a recovery spool 44 for recovering the grinding belt 31 used for grinding the wafer W. Tensioning motors (not shown) are connected to the supply spool 43 and the recovery spool 44 respectively. Each tensioning motor applies a predetermined torque to the supply spool 43 and the recovery spool 44, thereby applying a predetermined tension to the grinding belt 31.

[0111] The polishing belt 31 is supplied to the polishing head 50 with the polishing surface of the polishing belt 31 facing the be polished surface of the inclined portion of the wafer W. The polishing belt 31 is supplied from the supply spool 43 to the polishing head 50 through an opening (not shown) provided in the partition wall 100, and the used polishing belt 31 is recovered by the recovery spool 44 through the opening.

[0112] The polishing head 50 includes a pressing mechanism 52 that presses the polishing belt 31 toward the inclined surface of the wafer W. The polishing belt 31 is supplied via the end face of the pressing mechanism 52. In this embodiment, the pressing mechanism 52 includes a pressing pad 52a supporting the back side of the polishing belt 31 and a cylinder 52b connected to the pressing pad 52a. In one embodiment, a polishing stone may be used instead of the polishing belt 31. In this case, the polishing stone is held by the cylinder 52b constituting the pressing mechanism 52, and the polishing tool supply and recovery mechanism 41 and the pressing pad 52a can be omitted.

[0113] The pressing mechanism 52 presses the polishing belt 31 from the back side, polishing the beveled surface of the wafer W by bringing the polishing surface of the polishing belt 31 into contact with the beveled surface of the wafer W. The polishing head 50 also includes a plurality of guide rollers 53a, 53b, 53c, 53d, 53e, and 53f for supporting the polishing belt 31. The polishing tool supply and recovery mechanism 41 also includes a plurality of guide rollers 53g and 53h for supporting the polishing belt 31. The traveling direction of the polishing belt 31 is guided by the guide rollers 53a, 53b, 53c, 53d, 53e, 53f, 53g, and 53h. In particular, the guide rollers 53a and 53c, located at the top of the polishing head 50, guide the polishing belt 31 in a direction parallel to the polished surface of the beveled surface of the wafer W.

[0114] A liquid supply nozzle 28 is positioned above the wafer W, which is held by the rotating holding mechanism 10. The liquid supply nozzle 28 is connected to a liquid supply source (not shown). The liquid supply nozzle 28 is positioned towards the center O1 of the wafer W, and liquid is supplied from the liquid supply nozzle 28 to the surface of the wafer W. The liquid supplied to the surface of the wafer W diffuses across the entire surface of the wafer W due to centrifugal force, thereby forming a liquid flow on the beveled surface of the wafer W. The beveled surface of the wafer W is polished in the presence of the liquid. The liquid flows downwards from the periphery of the wafer W, thereby removing polishing debris from the beveled surface of the wafer W. Furthermore, the liquid prevents liquid containing foreign matter such as polishing debris generated during the polishing process from adhering to the surface of the wafer W. As a result, the surface of the wafer W can be kept clean. In this embodiment, pure water or alkaline water is used as the liquid.

[0115] As described above, when grinding the periphery of the wafer W, foreign matter such as grinding debris is generated, which may adhere to the grinding head 50. In this state, when grinding of the periphery of the wafer W continues, the liquid supplied from the liquid supply nozzle 28 adheres to the grinding head 50, and the liquid containing foreign matter may fall from the grinding head 50 onto the wafer W.

[0116] Therefore, in the embodiments shown below, a substrate processing apparatus capable of reliably preventing cleaning fluid containing foreign matter from falling from the polishing head 50 onto the wafer W will be described.

[0117] like Figure 2 As shown, the substrate processing apparatus includes: a polishing head 50 that presses a polishing belt 31, which is an example of a polishing tool, onto the periphery of a wafer W to polish the periphery of the wafer W; and a head cleaning device 200 that supplies cleaning fluid to the polishing head 50 during and / or after polishing the wafer W to clean the polishing head 50.

[0118] The head cleaning device 200 is disposed inside the partition 100 above (more specifically, directly above) the grinding head 50. The head cleaning device 200 may be configured to be immovable or movable.

[0119] The head cleaning device 200 includes a cleaning arm 201 and a cleaning nozzle 202 disposed toward the grinding head 50. The cleaning arm 201 has a cleaning fluid line 201a inside it through which cleaning fluid for cleaning the grinding head 50 passes. The cleaning nozzle 202 is mounted at the end of the cleaning arm 201 and connected to the cleaning fluid line 201a.

[0120] The head cleaning device 200 includes an on / off valve 205 for opening and closing the cleaning fluid line 201a, which is electrically connected to the action control unit 180. Therefore, the action control unit 180 can control the operation of the on / off valve 205.

[0121] The cleaning nozzle 202 is a wide-angle nozzle that sprays cleaning fluid into the grinding head 50. More specifically, the head cleaning device 200 supplies cleaning fluid to the entire grinding head 50 by spraying cleaning fluid in a conical shape through the cleaning nozzle 202. The cleaning fluid is supplied to the grinding head 50 from directly above it. In this embodiment, the cleaning fluid is any one of pure water, conductive water, and a surfactant solution.

[0122] The head cleaning device 200 can supply cleaning fluid to the polishing head 50 during the polishing of the wafer W. With this structure, the head cleaning device 200 can prevent foreign matter from adhering to the polishing head 50. In this embodiment, the polishing head 50 can be cleaned during the polishing of the wafer W; therefore, the substrate processing apparatus can clean the polishing head 50 while processing the wafer W without extending the processing time required for the wafer W. In one embodiment, the head cleaning device 200 can also supply cleaning fluid to the polishing head 50 each time a wafer W is polished.

[0123] In one embodiment, the head cleaning apparatus 200 can supply cleaning fluid simultaneously with the liquid supply nozzle 28 supplying liquid to the wafer W. In other embodiments, the head cleaning apparatus 200 can supply cleaning fluid simultaneously with the polishing head 50 initiating polishing of the peripheral portion of the wafer W.

[0124] In one embodiment, the grinding head 50 may have a surface that has been hydrophobically treated. By applying a hydrophobic treatment to the entire grinding head 50, the adhesion of liquid containing foreign matter can be effectively prevented, thereby further improving the cleaning effect of the head cleaning device 200.

[0125] Figure 3 Viewed from above Figure 2 A schematic diagram of the substrate processing apparatus shown. Figure 3 For ease of viewing, the illustration of the head cleaning device 200 has been omitted. Figure 3 As shown, the substrate processing apparatus also includes a tilting mechanism 81, which tilts the grinding head 50 relative to the surface of the wafer W on the rotation holding mechanism 10.

[0126] The tilting mechanism 81 includes a rotary drive device 82 and a crank arm 85. The rotary drive device 82 includes a motor (not shown), pulleys, belts, etc. One end of the crank arm 85 is connected to the circular motion mechanism 61, and the other end of the crank arm 85 is connected to the rotary drive device 82. The crank arm 85 rotates about the rotation axis Ct of the rotary drive device 82. The rotation axis Ct extends in the tangential direction of the wafer W on the rotation holding mechanism 10. When the rotary drive device 82 rotates the crank arm 85 clockwise and counterclockwise by a predetermined angle about the rotation axis Ct, the circular motion mechanism 61 and the grinding head 50 connected to the crank arm 85 also rotate clockwise and counterclockwise by a predetermined angle about the rotation axis Ct.

[0127] The grinding surface of the grinding belt 31, supported by the grinding head 50, is located on the extension line of the rotation axis Ct of the rotary drive device 82. Therefore, when the rotary drive device 82 is driven, the grinding head 50 rotates clockwise and counterclockwise by a predetermined angle with the grinding surface of the grinding belt 31 as the center.

[0128] In this way, by rotating the polishing head 50 around the rotation axis Ct, the angle of the polishing head 50 relative to the beveled surface of the wafer W can be changed. The rotation drive device 82 is a motor such as a servo motor or a stepper motor that can precisely control the position and speed, and is configured such that the polishing head 50 can rotate at a desired speed to a desired angle set by the program.

[0129] Figure 4 This is a schematic diagram showing the state in which the grinding head 50 and the circular motion mechanism 61 are tilted downwards by the tilting mechanism 81. Figure 5 This is a schematic diagram showing the grinding head 50 and the circular motion mechanism 61 tilted upwards by the tilting mechanism 81. Figure 4 In the middle, the polishing belt 31 contacts the lower side region of the beveled surface of the wafer W, in Figure 5 In this process, the polishing belt 31 contacts the upper region of the beveled surface of the wafer W. Thus, by changing the angle of the polishing head 50 along the beveled surface of the wafer W, the entire beveled surface of the wafer W can be polished.

[0130] like Figure 3 As shown, the grinding head 50 is connected to the grinding head moving mechanism 105. The grinding head moving mechanism 105 is fixed to the rotary drive device 82 of the tilting mechanism 81, and the grinding head 50 is connected to the grinding head moving mechanism 105 via the tilting mechanism 81 and the circular motion mechanism 61 (described later). The grinding head moving mechanism 105 is configured to move the grinding head 50 in the radial direction of the wafer W. The grinding head moving mechanism 105 can be constructed from a linear actuator such as a cylinder. The grinding head moving mechanism 105 and... Figure 2 The motion control unit 180 shown is electrically connected, and its operation is controlled by the motion control unit 180.

[0131] When the wafer W is transported onto the holding stage 4 of the rotary holding mechanism 10, and when the wafer W is removed from the holding stage 4 of the rotary holding mechanism 10, the grinding head moving mechanism 105 moves the grinding head 50 away from the holding stage 4. When grinding the beveled surface of the wafer W held by the holding stage 4, the grinding head moving mechanism 105 moves the grinding head 50 toward the wafer W.

[0132] In this embodiment, the substrate processing apparatus includes one set of polishing heads 50 and a polishing tool supply and recycling mechanism 41. However, in one embodiment, it may also include two or more sets of polishing heads 50 and polishing tool supply and recycling mechanisms 41. The number of head cleaning devices 200 corresponds to the number of polishing heads 50.

[0133] The head cleaning apparatus 200 can be configured such that, when the polishing head 50 is positioned below the wafer W via the tilting mechanism 81, cleaning fluid is supplied to the polishing head 50 (see reference). Figure 4 This structure reliably prevents cleaning fluid from adhering to the wafer W after cleaning the polishing head 50.

[0134] The head cleaning device 200 can supply cleaning fluid to the polishing head 50 after the polishing of the wafer W is completed, or more specifically, after the wafer W is transported from the rotary holding mechanism 10. With this structure, it is possible to more reliably prevent the cleaning fluid after cleaning the polishing head 50 from adhering to the wafer W.

[0135] Alternatively, after the head cleaning device 200 supplies cleaning fluid to the grinding head 50, the tilting mechanism 81 continuously changes the tilt angle of the grinding head 50, thereby removing the cleaning fluid. That is, the tilting mechanism 81 removes the cleaning fluid by means of... Figure 4 and Figure 5 As shown, the angle of the polishing head 50 is changed in the vertical direction with the periphery of the wafer W as the center, and the tilting mechanism 81 can shake off the liquid (e.g., cleaning fluid) adhering to the polishing head 50.

[0136] The polishing head 50 also includes a circular motion mechanism 61, which causes the polishing tool support structure to move circularly relative to the wafer W. In this specification, the polishing tool support structure is defined as a structure that supports the polishing tool and constitutes at least a portion of the polishing head 50. In this embodiment, the polishing tool support structure is an integral part of the polishing head 50. When the wafer W is held in the rotary holding mechanism 10, the polishing head 50 faces the periphery of the wafer W.

[0137] Figure 6 This is a schematic diagram illustrating one embodiment of a circular motion mechanism 61 used to make the grinding tool support structure perform circular motion. Figure 6The circular motion mechanism 61 shown includes: a motor 62, an eccentric rotating body 65 fixed to a rotating shaft 63 of the motor 62, a platform 69 connected to the eccentric rotating body 65 via a bearing 67, and a plurality of cranks 70 supporting the platform 69. Figure 6 Only one crank 70 is shown, but at least three cranks 70 are arranged around an eccentric rotating body 65. The motor 62 is fixed to the base 71.

[0138] The axis 65a of the eccentric rotating body 65 is separated from the axis 63a of the rotating shaft 63 of the motor 62 by a distance e. Thus, when the motor 62 operates, the eccentric rotating body 65 performs a circular motion with a radius e. The crank 70 has a first shaft 72 and a second shaft 73 fixed to each other. The axis 72a of the first shaft 72 is also separated from the axis 73a of the second shaft 73 by the same distance e. The first shaft 72 is supported by a bearing 75 held on a base 69 to be rotatable, and the second shaft 73 is supported by a bearing 77 to be rotatable. The bearing 77 is fixed to a support member 79, which is fixed to a base 71.

[0139] According to the above structure, when the motor 62 rotates, the eccentric rotating body 65 performs a circular motion with radius e, and the platform 69, which is connected to the eccentric rotating body 65 via the bearing 67, also performs a circular motion with radius e. In this specification, circular motion is defined as the motion of an object moving on a circular track.

[0140] The platform 69 is supported by multiple cranks 70, therefore, the platform 69 itself does not rotate when it performs circular motion. Such motion of the platform 69 is called translational-rotational motion. In this specification, the motion in which the object moves along a circular track without rotating itself is defined as translational-rotational motion. This translational-rotational motion is a specific example of circular motion. In this embodiment, the grinding head 50 is fixed to the platform 69 via a holding member 89. Thus, the grinding head 50 and the platform 69 perform circular motion (translational-rotational motion) together. In this embodiment, the circular motion mechanism 61 is a translational-rotational mechanism that causes the grinding tool support structure (the entire grinding head 50) to perform translational-rotational motion. The circular motion (translational-rotational motion) of this embodiment is a circular motion (translational-rotational motion) within a plane in which the orientation of the grinding head 50 is set as the normal direction.

[0141] After the head cleaning device 200 supplies cleaning fluid to the grinding head 50, the circular motion mechanism 61 can cause the grinding head 50 to perform circular motion, thereby removing the cleaning fluid. With this structure, the circular motion mechanism 61 can shake off the liquid (e.g., cleaning fluid) adhering to the grinding head 50.

[0142] Figure 7 This is a diagram showing the vibration device that causes the grinding head 50 to vibrate. (Example) Figure 7As shown, the substrate processing apparatus includes a vibration device 210 that vibrates the polishing head 50. The vibration device 210 is mounted on the polishing head 50 and electrically connected to the motion control unit 180. The vibration device 210 vibrates according to the command of the motion control unit 180, and the polishing head 50 and the vibration device 210 vibrate together. After the head cleaning device 200 supplies cleaning fluid to the polishing head 50, the vibration device 210 vibrates the polishing head 50 to remove the cleaning fluid.

[0143] Figure 8 This is a diagram showing a gas injection device that injects pressurized gas into the grinding head 50. (See diagram for example.) Figure 8 As shown, the substrate processing apparatus includes a gas injection device 215 for injecting pressurized gas into a polishing head 50. The gas injection device 215 includes an injection arm 216 mounted on the polishing head 50 and an injection nozzle 217 disposed toward the polishing head 50. The injection nozzle 217 is mounted at the end of the injection arm 216, and the gas flow path 219 connected to the injection nozzle 217 can be opened and closed by an on / off valve 218.

[0144] The motion control unit 180 is electrically connected to the on / off valve 218, thereby enabling the on / off valve 218 to open and close. When the motion control unit 180 opens the on / off valve 217, pressurized gas is injected into the grinding head 50 through the injection nozzle 217. After the head cleaning device 200 supplies cleaning fluid to the grinding head 50, the gas injection device 215 injects pressurized gas into the grinding head 50 to remove the cleaning fluid.

[0145] Figure 9 This diagram illustrates a suction device for drawing away cleaning fluid adhering to the grinding head 50. (See diagram for example.) Figure 9 As shown, the substrate processing apparatus includes a suction device 220 for attracting cleaning fluid adhering to the polishing head 50. The polishing head 50 includes a head cover 221 mounted on its surface. The suction device 220 includes a suction line 222 connected to the head cover 221 of the polishing head 50 and an on / off valve 223 mounted on the suction line 222 and used to open and close the suction line 222.

[0146] A plurality of grooves 221a are formed on the surface of the headgear 221, and a plurality of suction holes 221b are formed in each of these grooves 221a. Suction lines 222 are connected to each of the plurality of suction holes 221b.

[0147] The motion control unit 180 is electrically connected to the on / off valve 223, thereby enabling the on / off valve 223 to be opened and closed. When the motion control unit 180 opens the on / off valve 223, liquid adhering to the grinding head 50 (more specifically, the head cover 221) is drawn into the suction port 221b and removed from the grinding head 50. After the head cleaning device 200 supplies cleaning fluid to the grinding head 50, the suction device 220 draws away the cleaning fluid adhering to the grinding head 50, thereby removing the cleaning fluid.

[0148] The operation of the substrate processing apparatus will be explained below. The operation of the substrate processing apparatus described below is provided by... Figure 2 The motion control unit 180 shown controls the operation. The motion control unit 180 is composed of a dedicated computer or a general-purpose computer. The motion control unit 180 includes a storage device 180a storing a program and a processing device 180b that executes calculations according to the program.

[0149] The computer-controlled motion control unit 180 operates according to a program stored in the storage device 180a. The program includes the following instructions: instructing the processing device 180b to perform a substrate rotation process by the rotating holding mechanism 10, which rotates the wafer W while holding it; instructing the processing device 180b to perform a polishing process by the polishing head 50, which presses a polishing tool (in this embodiment, a polishing belt 31) against the periphery of the wafer W to polish the periphery of the wafer W; and instructing the processing device 180b to perform a head cleaning process by the head cleaning device 200, which supplies cleaning fluid to the polishing head 50 during and / or after polishing the wafer W to clean the polishing head 50.

[0150] In other words, the motion control unit 180 performs the following steps: causing the rotary holding mechanism 10 to perform the substrate rotation process, causing the grinding head 50 to perform the grinding process, and causing the head cleaning device 200 to perform the head cleaning process.

[0151] The program used to cause the motion control unit 180 to perform these steps is stored in a non-transitory tangible storage medium that can be read by a computer, and is provided to the motion control unit 180 via the storage medium. Alternatively, the program can be input to the motion control unit 180 from a communication device (not shown) via a communication network such as the Internet or a local area network. The storage device 180a includes a main storage device such as RAM, and a supplementary storage device such as a hard disk drive (HDD) or a solid-state drive (SSD). Examples of processing devices 180b include a CPU (central processing unit) and a GPU (graphics processing unit).

[0152] The wafer W to be ground is held on the holding stage 4 with its surface (device side) facing upwards via a transport mechanism (not shown), and with its center O1 located on the axis Cr of the holding stage 4. The wafer W rotates about the axis Cr of the holding stage 4 (i.e., the axis of the wafer W). Next, liquid is supplied to the surface of the wafer W from the liquid supply nozzle 28. The liquid supplied to the surface of the wafer W diffuses across the entire surface of the wafer W due to centrifugal force, thereby forming a liquid flow on the beveled surface of the wafer W.

[0153] The grinding belt 31 is pre-supplied to the grinding head 50. The motion control unit 180 drives the grinding instrument supply recovery mechanism 41 to apply a predetermined tension to the grinding belt 31 and to make the grinding belt 31 travel in a direction parallel to the end face of the pressing mechanism 52.

[0154] While supplying liquid to the surface of the wafer W, the beveled surface of the wafer W is ground by contacting the polishing belt 31 with the beveled surface of the rotating wafer W. The head cleaning device 200 can also supply cleaning fluid to the polishing head 50 during the polishing of the wafer W.

[0155] While grinding the periphery of the wafer W by changing the angle of the grinding head 50 relative to the wafer W through the tilting mechanism 81, the motion control unit 180 can open the on / off valve 205 to supply cleaning fluid to the grinding head 50 when the grinding head 50 is positioned below the wafer W, and the motion control unit 180 can also close the on / off valve 205 when the grinding head 50 is positioned above the wafer W.

[0156] After a preset time has elapsed, the motion control unit 180 stops the operation of the rotation holding mechanism 10, the polishing head 50, and the polishing tool supply and recovery mechanism 41, thereby ending the polishing process. The head cleaning device 200 may also supply cleaning fluid to the polishing head 50 after the wafer W has been polished. The motion control unit 180 may also cause the tilting mechanism 81 to perform a tilting process after the cleaning fluid has been supplied to the polishing head 50. This tilting process continuously changes the tilt angle of the polishing head 50, thereby removing the cleaning fluid.

[0157] The motion control unit 180 can also, after supplying cleaning fluid to the grinding head 50, cause the vibration device 210 to perform a vibration process, which vibrates the grinding head 50 to remove the cleaning fluid. Alternatively, the motion control unit 180 can, after supplying cleaning fluid to the grinding head 50, cause the gas injection device 215 to perform an injection process, which injects pressurized gas into the grinding head 50 to remove the cleaning fluid. The motion control unit 180 can also, after supplying cleaning fluid to the grinding head 50, cause the suction device 220 to perform a suction process, which suctions away the cleaning fluid adhering to the grinding head 50 to remove the cleaning fluid. Finally, the motion control unit 180 can, after supplying cleaning fluid to the grinding head 50, cause the circular motion mechanism 61 to perform a circular motion process, which causes the grinding head 50 to move in a circular motion to remove the cleaning fluid.

[0158] The above-described embodiments can be appropriately combined. In particular, in the above embodiments, multiple steps for removing cleaning fluid adhering to the grinding head 50 have been described, but these multiple steps can be combined as much as possible.

[0159] The above-described embodiments are intended to enable those skilled in the art to carry out the invention. Various modifications of the above-described embodiments can naturally be implemented by those skilled in the art, and the technical concept of the invention can be applied to other embodiments. Therefore, the invention is not limited to the described embodiments, but rather to the broadest scope of the technical concept defined by the scope of protection claimed according to the invention.

Claims

1. A substrate processing apparatus comprising: A rotary holding mechanism that holds the substrate and rotates the substrate. A grinding head that presses a grinding tool against the periphery of the substrate to grind the periphery of the substrate; as well as A head cleaning apparatus, after the substrate is polished, supplies cleaning fluid to the polishing head to clean it. The head cleaning apparatus is positioned above the polishing head and supplies the cleaning fluid to the polishing head from directly above it. The substrate processing apparatus is characterized in that... The head cleaning device includes: A cleaning nozzle, which is positioned vertically and downwards above the grinding head, facing the grinding head; and Motion control unit The motion control unit is configured to at least: Rotate the rotation holding mechanism. When the rotating holding mechanism rotates the held substrate, the grinding tool is pressed against the periphery of the substrate. After the rotation and pressing are stopped, the grinding head is tilted downwards towards the substrate using a tilting mechanism. When the grinding head is tilted downwards towards the substrate, the cleaning fluid is supplied to the grinding head from the head cleaning device. The substrate processing apparatus includes a suction device that suctions the cleaning fluid adhering to the polishing head. After the head cleaning device supplies the cleaning fluid to the polishing head, the suction device suctions the cleaning fluid adhering to the polishing head, thereby removing the cleaning fluid. Furthermore, the grinding head has a head cover mounted on its surface, and the suction device has a suction line connected to the head cover. The suction line has an on / off valve for opening and closing the suction line. Multiple grooves are formed on the surface of the headgear, and multiple suction holes are formed in each of these grooves. The suction line is connected to each of the multiple suction holes.

2. The substrate processing apparatus according to claim 1, wherein The motion control unit is configured such that after the head cleaning device supplies the cleaning fluid to the grinding head, the motion control unit continuously changes the tilt angle of the grinding head, thereby removing the cleaning fluid.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, The head cleaning device is configured to supply the cleaning fluid to the grinding head each time a substrate is ground.

4. The substrate processing apparatus according to claim 1 or 2, characterized in that, The cleaning solution is any one of pure water, conductive water, and surfactant solution.

5. The substrate processing apparatus according to claim 1 or 2, characterized in that, The substrate processing apparatus includes a vibration device that causes the grinding head to vibrate. After the head cleaning device supplies the cleaning fluid to the grinding head, the vibration device causes the grinding head to vibrate, thereby removing the cleaning fluid.

6. The substrate processing apparatus according to claim 1 or 2, characterized in that, The substrate processing apparatus includes a gas injection device that injects pressurized gas into the polishing head. After the head cleaning device supplies the cleaning fluid to the grinding head, the gas injection device injects pressurized gas into the grinding head to remove the cleaning fluid.

7. The substrate processing apparatus according to claim 6, characterized in that, The gas injection device includes an injection arm and an injection nozzle. The injection arm is mounted on the grinding head, and the injection nozzle is configured to face the grinding head. The injection nozzle is mounted at the end of the injection arm.

8. The substrate processing apparatus according to claim 1 or 2, characterized in that, The substrate processing apparatus includes a circular motion mechanism that causes the grinding head to perform circular motion. After the head cleaning device supplies the cleaning fluid to the grinding head, the circular motion mechanism causes the grinding head to perform a circular motion, thereby removing the cleaning fluid.

9. A substrate processing method, comprising the following steps: Rotate the substrate while keeping it in place; The grinding tool is pressed against the periphery of the substrate to grind the periphery of the substrate; Stop the rotation of the substrate and tilt the grinding head downwards towards the substrate; and After the substrate is polished, a cleaning solution is supplied to the polishing head to clean it. The substrate processing method is characterized in that... The process of supplying the cleaning fluid includes the following steps: The cleaning fluid is supplied to the grinding head from a cleaning nozzle positioned vertically and downwards directly above the grinding head; and After the substrate is polished, and with the polishing head positioned below the substrate, the cleaning solution is supplied to the polishing head. The substrate processing method includes a step of attracting cleaning fluid adhering to the polishing head. After the head cleaning device supplies the cleaning fluid to the polishing head, the attracting device attracts the cleaning fluid adhering to the polishing head, thereby removing the cleaning fluid. The grinding head has a head cover mounted on its surface, and the suction device has a suction line connected to the head cover. The suction line has an on / off valve for opening and closing the suction line. Multiple grooves are formed on the surface of the headgear, and multiple suction holes are formed in each of these grooves. The suction line is connected to each of the multiple suction holes.

10. The substrate processing method according to claim 9, characterized in that, The substrate processing method includes the following steps: after supplying the cleaning fluid to the polishing head, the tilt angle of the polishing head is continuously changed to remove the cleaning fluid.

11. The substrate processing method according to claim 9, characterized in that, The process of supplying the cleaning solution is performed each time a substrate is polished.

12. The substrate processing method according to claim 9, characterized in that, The cleaning solution is any one of pure water, conductive water, and surfactant solution.

13. The substrate processing method according to claim 9, characterized in that, The substrate processing method includes the following steps: after supplying the cleaning fluid to the polishing head, the polishing head is vibrated to remove the cleaning fluid.

14. The substrate processing method according to claim 9, characterized in that, The substrate processing method includes the following steps: after supplying the cleaning fluid to the polishing head, pressurized gas is injected into the polishing head to remove the cleaning fluid.

15. The substrate processing method according to claim 9, characterized in that, The substrate processing method includes the following steps: after supplying the cleaning fluid to the polishing head, the polishing head is made to perform a circular motion to remove the cleaning fluid.

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