Embedded wafer level optical sensor package

Abstract

Embodiments of the present disclosure relate to embedded wafer level optical sensor packages. The present disclosure relates to a sensor die having an embedded optical sensor and an embedded optical emitter and methods of manufacturing the same. The optical emitter in the sensor die is surrounded by a resin. The sensor die is incorporated into a semiconductor device package and methods of manufacturing the same. The semiconductor device package includes a first light transparent structure on the optical sensor of the sensor die and a second light transparent structure on the optical emitter of the sensor die. The first and second light transparent structures cover and protect the optical sensor and the optical emitter, respectively. A molding compound is on a surface of the sensor die and covers sidewalls of the first and second light transparent structures on the sensor die.

Description

Technical Field

[0001] This disclosure relates to a bare die embedded in a substrate, a package including a bare die embedded in a substrate, and a method of manufacturing the same. Background Technology

[0002] Typically, semiconductor device packages (such as chip-scale packages or wafer-level chip-scale packages (WLCSPs)) contain semiconductor devices, such as sensors configured to detect any number or quantity of external environmental factors outside the semiconductor package. For example, such semiconductor device packages can detect light, temperature, sound, pressure, or any other quantity or quantity of external environmental factors.

[0003] Semiconductor device packages configured to detect the proximity of light or an object to a semiconductor device (e.g., a time-of-flight (TOF) device) typically utilize light emitting devices and light sensor devices formed in or on a semiconductor substrate. Semiconductor device packages may include a cover coupled to the surface of the substrate to cover and protect the light emitting devices and light sensor devices. Adhesives and pick-and-place machines are typically used to couple the cover to the surface of the substrate. However, when coupling the cover to the surface of the substrate, pick-and-place machines struggle to achieve the desired precise tolerances.

[0004] Furthermore, the cover, adhesive, and substrate are made of different materials with different coefficients of thermal expansion (CTE). This causes the cover, lens, and substrate to expand or contract in different amounts when exposed to temperature changes.

[0005] The cover typically includes a first light-transmitting lens aligned with the light emitter and a second light-transmitting lens aligned with the light sensor. The cover forms a cavity around the light sensor and the light emitter and is spaced apart from the surface of the die. In some semiconductor device packages, the light emitter and the light sensor are formed in corresponding dies, with the light emitter die stacked on the surface of the light sensor die. This stacking arrangement, and the space between the cover and the surface of the light sensor die, increases the overall profile and thickness of the semiconductor device.

[0006] Providing a large number of semiconductor device packages in electronic devices to perform increasingly complex functions, while reducing manufacturing costs and increasing resistance to external stresses to reduce the likelihood of failure, presents significant challenges.

[0007] A major challenge is reducing the likelihood of failures in semiconductor device packages due to the varying coefficients of thermal expansion (CTE) of the different materials within the package when exposed to temperature variations. These differences in CTE cause these different materials to expand and contract at different rates. This variability in expansion and contraction increases the potential for cracks and breaks to form in the various electrical and physical connections within the semiconductor device package. For example, the adhesive coupling the cover to the substrate surface within the semiconductor device package is a weak point as the package expands and contracts, as cracks are likely to occur within the adhesive, leading to misalignment or complete disconnection of the cover. Summary of the Invention

[0008] The embodiments disclosed herein can overcome the significant challenges associated with semiconductor device packages utilizing the aforementioned cover.

[0009] This disclosure relates to various embodiments of a semiconductor device package including a sensor die having a light sensor and a light emitter, and methods of manufacturing the same. The light emitter is positioned within an opening in the sensor die and surrounded by resin. In some embodiments, the light emitter may be a semiconductor die, a light-emitting diode device, or some other light-emitting device. A light-transmitting structure is placed or formed on the light emitter and the light sensor to cover and protect the light sensor and the light emitter.

[0010] The bonding wire is in the light-transmitting structure on the light emitter and forms an electrical connection that couples the light emitter to the sensor die.

[0011] In some embodiments, the molding compound is formed on the sidewalls of the light-transmitting structure, on the surface of the sensor die, and the surface of the molding compound is substantially coplanar with the surface of the light-transmitting structure. In some other embodiments, the molding compound is formed on the sidewalls of the light-transmitting structure, on the surface of the light-transmitting structure transverse to the sidewalls of the light-transmitting structure, and on the surface of the sensor die. Attached Figure Description

[0012] To better understand the embodiments, reference will now be made to the accompanying drawings by way of example. In the drawings, unless the context otherwise indicates, the same reference numerals identify similar elements or actions. The dimensions of the elements and related portions in the drawings are not necessarily drawn to scale. For example, some of these elements may be enlarged and positioned to improve the readability of the drawings.

[0013] Figure 1A It is along Figure 1B A cross-sectional view of an embodiment of the bare die, taken from line 1A-1A in the diagram;

[0014] Figure 1B yes Figure 1A A top view of an embodiment of the bare die;

[0015] Figure 2A It is along Figure 2B A cross-sectional view of one embodiment of the package, taken from line 2A-2A in the diagram;

[0016] Figure 2B yes Figure 2A A top view of an embodiment of the packaged component;

[0017] Figure 3A It is along Figure 3B A cross-sectional view of one embodiment of the package, taken from line 3A-3A in the diagram;

[0018] Figure 3B yes Figure 3A A top view of an embodiment of the packaged component;

[0019] Figure 4 yes Figures 1A to 3B Bottom view of embodiments of the bare die and the package;

[0020] Figures 5A to 5H Manufacturing process is shown Figures 1A to 1B A flowchart of a method for an embodiment of a bare die;

[0021] Figures 6A to 6E Manufacturing process is shown Figures 2A to 2B A flowchart of the method of an embodiment of the package in the diagram; and

[0022] Figures 7A to 7E Manufacturing process is shown Figures 3A to 3B A flowchart of a method for an embodiment of the encapsulation component. Detailed Implementation

[0023] In the following description, certain specific details are set forth in order to provide a thorough understanding of various embodiments of this disclosure. However, those skilled in the art will understand that this disclosure may be practiced without these specific details. In other instances, well-known structures associated with electronic components and semiconductor manufacturing techniques have not been described in detail to avoid unnecessarily obscuring the description of embodiments of this disclosure.

[0024] Unless the context otherwise requires, throughout the specification and the appended claims, the word “comprising” and its variations (such as “including”) shall be interpreted as open-ended and inclusive, meaning “including, but not limited to”.

[0025] The use of ordinal numbers such as first, second, and third does not necessarily imply a sense of sequential order, but can simply be a distinction between multiple instances of an action or structure.

[0026] Throughout this specification, references to "an embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment. Therefore, throughout this specification, the phrases "in one embodiment" or "in an embodiment" appearing in various places do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0027] The terms “left,” “right,” “top,” and “bottom” are used only for oriented discussion purposes based on the components discussed in the accompanying drawings of this disclosure. These terms do not limit the possible locations of explicit, implicit, or inherent disclosures in this disclosure.

[0028] The term "basic" is used to clarify that there may be subtle differences when manufacturing packages in the real world, because nothing can be made exactly the same or identical. In other words, "basic" means that there may be some minor variations in practice, and instead, it is manufactured within acceptable tolerances.

[0029] The singular forms “a,” “an,” and “the” used in this specification and the appended claims include the plural forms, unless otherwise expressly stated in the text.

[0030] While various embodiments have been shown and described with respect to semiconductor dies and semiconductor packages, it will be readily understood that embodiments of this disclosure are not limited thereto. In the various embodiments, the structures, apparatuses, methods, etc., described herein may be implemented or otherwise utilized in any suitable type or form of semiconductor die or package, and may be manufactured using any suitable semiconductor die and package technology as needed.

[0031] According to one embodiment, the optical sensing device 10 in... Figure 1A and Figure 1B The optical sensing device 10 is shown in the figure. It includes a light sensor 100 and a light emitter 101 embedded in a semiconductor substrate 102. The light sensor 100 and the light emitter 101 include surfaces that are substantially coplanar or flush with each other and substantially coplanar or flush with the surface of the semiconductor substrate 102. For example, the optical sensing device 10 may be a time-of-flight (TOF) distance sensor that senses the distance to an object based on the time taken for light to be directed from the light emitter 101 to the object and for the light sensor 100 to receive the light reflected from the object. Alternatively, the optical sensing device 10 may be a camera or other image sensing device.

[0032] Figure 1A It is along Figure 1BThe image shows a cross-sectional view of one embodiment of the optical sensing device 10, taken along line 1A-1A. The substrate 102 is a sensor die and has a first surface 104 and a second surface 106 opposite to the first surface 104. Based on... Figure 1A In the orientation of the optical sensing device 10, the first surface 104 can be referred to as the top surface, and the second surface 106 can be referred to as the bottom surface. The sidewall 108 of the substrate 102 is transverse to the first surface 104 and the second surface 106 of the substrate 102. The sidewall 108 extends from the first surface 104 of the substrate 102 to the second surface 106.

[0033] A light sensor 100 is embedded in a first surface 104 of a substrate 102. The light sensor 100 has an end portion 109 terminating within the first surface 104 of the substrate 102 at this end portion, and the light sensor 100 has a dimension d1 extending between the ends 109 of the light sensor 100. In some embodiments, the light sensor 100 may be on or extend outward from the first surface 104 of the substrate 102. The light sensor 100 may be a photoelectric sensor, a microelectromechanical system (MEMS) sensor, or some other light sensor that detects light.

[0034] Multiple electrical connections 112 are present in substrate 102. The electrical connections 112 extend from a first surface 104 of substrate 102 to a second surface 106. Each electrical connection 112 includes a conductive via 113 extending between a pad 114 on the first surface 104 of substrate 102 and the second surface 106 of substrate 102. The electrical connections 112 may be electrical vias, electrical interconnect structures, or combinations of other electrical connections configured to transmit electrical signals from and to various components of a die or package. The electrical connections 112 may be made of a single conductive material or may be made of multiple conductive materials. The conductive materials may be copper, silver, gold, alloys, or combinations of other conductive materials.

[0035] The substrate 102 includes an opening 118 for receiving a light emitter 101. The opening 118 may be a cavity, aperture, trench, or some other type of opening extending through or into the substrate 102. The opening 118 includes sidewalls 120 transverse to a first surface 104 and a second surface 106 of the substrate 102. The opening 118 extends from the first surface 104 through the substrate 102 to the second surface 106. In some other embodiments, the opening 118 may have an end terminating within the substrate 102 before reaching the second surface 106. However, as... Figure 1A As shown, the preferred embodiment will include an opening 118 extending from a first surface 104 of the substrate 102 to a second surface 106.

[0036] A light emitter 101 is positioned within an opening 118, and may be located at the center of the opening 118. The light emitter 101 has a first surface 124 and a second surface 126 opposite to the first surface 124. The first surface 124 emits light and may be referred to as the emitting surface, while the second surface 126 does not emit light and may be referred to as the non-emitting surface. The first surface 124 is substantially coplanar with the first surface 104 of the substrate 102. The second surface 126 is substantially coplanar with the second surface 106 of the substrate 102.

[0037] The light emitter 101 includes bonding pads 128 on the emitting surface 124. Although not shown for simplicity and brevity, bonding pads or multiple bonding pads may be on the second surface 126 of the light emitter 101. The bonding pads or multiple bonding pads on the second surface 126 of the light emitter 101 may be coupled to the bonding pads 128 on the first surface 124 of the light emitter 101 by electrical traces, multiple electrical traces, electrical vias, multiple electrical vias, or some other electrical connection or combination of electrical connections within the light emitter 101.

[0038] The light emitter 101 includes a sidewall 130 transverse to a first surface 124 and a second surface 126. The sidewall 130 is spaced from the sidewall 120 of the opening 118 by a space of dimension d2. Dimension d2 can be any dimension chosen to separate the light emitter 101 from the sidewall 120 of the opening 118. In some embodiments, some or all of the sidewalls 130 of the light emitter 101 may contact the sidewall 120 of the opening 118.

[0039] Resin 132 is in the opening 118 and fills the space between the sidewall 120 of the opening 118 and the sidewall 130 of the light emitter 101, such that resin 132 has a thickness d2. In a preferred embodiment, resin 132 is an opaque material and may be black resin, black molding compound, black epoxy resin, or some other opaque material or combination of opaque materials. In some other embodiments, resin 132 may be translucent or translucent, and may be molding compound, epoxy resin, or some other resin or combination of resins to aid in the formation of the package. Resin 132 covers the sidewalls 120, 130 and extends between the first surface 104 and the second surface 106 of the substrate 102. Resin 132 includes a first surface 134 substantially coplanar with the first surface 104 of the substrate 102 and a second surface 136 substantially coplanar with the second surface 106 of the substrate 102.

[0040] Multiple contacts 138 are located on the second surface 106 of the substrate 102 for mounting or coupling the optical sensing device 10 to external electronic components or devices. Some of the contacts 138 may be coupled to the end 116 of a conductive via 113 of an electrical connection 112 at the second surface 106 of the substrate 102. The contacts 138 are conductive and may be made of copper, silver, gold, alloys, or some other conductive materials or combinations thereof. Some of the electrical contacts 138 may be coupled to bonding pads on the second surface 126 of the light emitter 101, and some electrical contacts may be coupled to the light sensor 100. The contacts 138 may mount or couple the optical sensing device 10 to external electronic components or devices using conductive materials (such as solder), which will be discussed in more detail later. For example, the optical sensing device 10 may be mounted to a printed circuit board (PCB), an electrical interconnect structure, or some other external electronic component configured to transmit electrical signals to and from electrical components.

[0041] A non-conductive layer 140 is located on the second surface 106 of the substrate 102 and on the contact portion 138. The non-conductive layer 140 may be made of any combination of insulating, passivating, repassivating, dielectric, or non-conductive materials. The non-conductive layer 140 includes a plurality of openings 142 that expose the contact portion 138. The sidewalls 143 of the non-conductive layer 140 are substantially coplanar with the sidewalls 108 of the substrate 102.

[0042] Figure 1B yes Figure 1A The image shows a top view of the optical sensing device 10. The light emitter 101 includes an emitter 144 on its emitting surface 124. The emitter 144 may be a laser diode (LD), a light-emitting diode (LED), a vertical cavity surface-emitting laser (VCSEL), or some other light-emitting device configured to emit light. The emitted light may be visible light, infrared light, or some other type of light configured to be emitted by the emitter 144.

[0043] Electrical connection 146 couples bonding pad 128 to emitter 144. Electrical connection 146 may be an electrical trace, multiple electrical traces, interconnect structure, or a combination of other electrical connections extending along and on the emitting surface 124 of light emitter 101. In some embodiments, electrical connection 146 may extend from bonding pad 128 to emitter 144 within light emitter 101.

[0044] As in Figure 1AAs shown on the left, electrical connection 148 couples one of a plurality of pads 114 to the light sensor 100. Electrical connection 148 may be an electrical trace, a plurality of electrical traces, an interconnect structure, or some other electrical connection or combination thereof extending along and on a first surface 104 of the substrate 102. In some other embodiments, electrical connection 148 may extend from a bonding pad to the light emitter 144 within the light emitter 100. In some embodiments, several of the plurality of pads 114 may be coupled to the light sensor 100. The plurality of pads 114 may be referred to as a plurality of contact pads, a plurality of bonding pads, or some other type of pad for forming an electrical connection.

[0045] As previously described, the optical sensing device 10 may be a Time-of-Flight (TOF) distance sensor that senses the distance to an object based on the time it takes for light to be directed from a light emitter 101 to an object and for a light sensor 100 to receive the light reflected from the object. When the optical sensing device 10 is a TOF distance sensor, the emitter 144 emits light, which is reflected from the object and received by the light sensor 100. The optical sensing device 10 outputs data collected by the light sensor 100 regarding the reflected light beam received by the light sensor 100, and also outputs data regarding the light beam emitted by the emitter 144. A processor coupled to the optical sensing device 10 uses this data to determine the proximity of the object to the optical sensing device 10. Alternatively, the optical sensing device 10 may include an internal processor that determines the proximity of the object to the optical sensing device 10, rather than outputting data to an external processor.

[0046] Figures 2A to 2B Involving, including, Figures 1A to 1B An embodiment of the semiconductor package 20 of the optical sensing device 10 shown.

[0047] Figure 2A It is along Figure 2B A cross-sectional side view of an embodiment of the semiconductor package 20, taken along lines 2A-2A, and... Figure 2B This is a top view of the semiconductor package 20.

[0048] The semiconductor package 20 includes a first light-transmitting structure 202 on the light sensor 100. The first light-transmitting structure 202 exposes the light sensor 100 to light from the external environment. The first light-transmitting structure 202 includes sidewalls 204 transverse to a first surface 104 of the optical sensing device 10. An upper surface 205 of the first light-transmitting structure 202 extends between the sidewalls 204. The first light-transmitting structure 202 has a dimension d3 between the sidewalls 204 that is larger than the dimension d1 of the light sensor 100 and completely covers the light sensor 100. This allows the first light-transmitting structure 202 to protect the light sensor 100 from debris. In some other embodiments, the dimension d3 may be substantially equal to or smaller than the dimension d1.

[0049] The second light-transmitting structure 206 is on the light emitter 101. The second light-transmitting structure 206 exposes the light emitter to the external environment. The second light-transmitting structure 206 includes a sidewall 208 transverse to the first surface 104 of the optical sensing device 10, and an upper surface 209 transverse to the sidewall 208. The second light-transmitting structure 206 has a dimension d4 between the sidewalls 208, the dimension d4 being larger than the dimension extending from the left sidewall 120 of the opening 118 to... Figure 2A The dimension d5 is the end 210 of the pad 114 on the right side of the light emitter 101. This allows the second light-transmitting structure 206 to protect the light emitter 101 from debris. In some other embodiments, the dimension d4 may be substantially equal to or smaller than the dimension d5.

[0050] The light-transmitting structures 202 and 206 are made of materials that allow light (e.g., infrared, visible, ultraviolet, etc.) to pass through them. For example, the light-transmitting structures 202 and 206 may be made of glass, silicon, or some other light-transmitting materials or combinations thereof.

[0051] Bonding wire 211 is embedded in the second light-transmitting structure 206. Bonding wire 211 includes a first end coupled to the bonding pad 128 of the light emitter 101, and a second end coupled to... Figure 2A The second end of the pad 114 on the right side of the light emitter 101. Bond wire 211 transmits the signal from the light emitter 101 to... Figure 2A Electrical connection 112 is located on the right side of the optical transmitter 101, and vice versa. For example, bonding wire 211 can provide control signals to the optical transmitter 101 from an external controller, output error signals to the external controller, or transmit some other signals or combinations of signals.

[0052] The semiconductor package 20 includes a molding compound 212 on a first surface 104 of the optical sensing device 10, a sidewall 204 of a first light-transmitting structure 202, and a sidewall 208 of a second light-transmitting structure 206. The molding compound 212 partially covers the upper surface 205 of the first light-transmitting structure 202 and the upper surface 209 of the second light-transmitting structure 206, respectively. The sidewall 213 of the molding compound 212 is substantially coplanar with the sidewall 108 of the substrate 102. The molding compound 212 may be an epoxy resin material, a resin material, an insulating material, or some other type of molding compound or combination of molding compounds. The molding compound 212 is an opaque material through which light cannot pass. For example, the molding compound 212 may be a black molding compound, a black epoxy resin, a black resin, or some other opaque material or combination of opaque materials.

[0053] A first opening 214 in the molding compound 212 exposes the surface 205 of the first light-transmitting structure 202. Light passes through the first light-transmitting structure 202, enters the semiconductor package 20, and is received by the sensor 100. The first opening 214 has a dimension d6 extending between the sidewalls 216 of the first opening 214. Dimension d6 is smaller than dimensions d3 and d1. In some embodiments, dimension d6 may be greater than or equal to dimension d1, or may be substantially equal to dimension d3. When dimension d6 is substantially equal to dimension d3, the sidewalls 216 of the first opening 214 will be substantially coplanar with the sidewalls 204 of the first light-transmitting structure 202.

[0054] A second opening 218 in the molding compound 212 exposes the surface 209 of the second light-transmitting structure 206. Light emitted by the light emitter 101 passes through the second light-transmitting structure 206 and the second opening 218 to exit the semiconductor package 20. The second opening 218 has a dimension d7 extending between the sidewalls 220 of the second opening 218. Dimension d7 is smaller than dimensions d5 and d4. In some embodiments, dimension d7 may be larger than dimension d5, substantially equal to dimension d5, or substantially equal to dimension d4. When dimension d7 is substantially equal to dimension d4, the sidewalls 220 of the second opening 218 will be substantially coplanar with the sidewalls 208 of the second light-transmitting structure 206.

[0055] Figure 2B The top view of the semiconductor package 20 shows the upper surface of the molding compound 212, the upper surface 205 of the first light-transmitting structure 202, and the upper surface 209 of the second light-transmitting structure 206. Figure 2B The dashed lines in the diagram represent the portion of the first light-transmitting structure 202 covered by the molding compound 212 and the portion of the second light-transmitting structure 206 covered by the molding compound 212.

[0056] Figures 3A to 3B Another embodiment relates to a semiconductor package 30, the semiconductor package 30 including as Figures 1A to 1B The optical sensing device 10 shown herein, and having a connection with, as shown in the figure Figures 2A to 2B The embodiment of the package 20 shown has similar features. The main difference is that the package 30 has a first light-transmitting structure 302 and a second light-transmitting structure 308 extending to the upper surface of the molding compound 212, while... Figures 2A to 2B In the middle, the first light-transmitting structure 202 and the second light-transmitting structure 206 are partially covered by the molding compound 212.

[0057] A first light-transmitting structure 302 is located on the light sensor 100 and exposes the light sensor 100 to light from the external environment. The first light-transmitting structure 302 has sidewalls 304 and an upper surface 306 extending between the sidewalls 304. The first light-transmitting structure 302 has a dimension d8 between the sidewalls 304 that is larger than dimension d1. In some embodiments, dimension d8 may be substantially equal to dimension d1.

[0058] The second light-transmitting structure 308 is on the light emitter 101 and exposes the light emitter 101 to the external environment. The second light-transmitting structure 308 has sidewalls 310 and an upper surface 312 extending between the sidewalls. The second light-transmitting structure 308 has a dimension d9 between the sidewalls 310 that is larger than dimension d5. In some embodiments, dimension d9 may be substantially equal to dimension d5.

[0059] The molding compound 212 is on the sidewall 304 of the first light-transmitting structure 302 and on the sidewall 310 of the second light-transmitting structure 308. The molding compound 212 is substantially coplanar with the upper surface 306 of the first light-transmitting structure 302 and substantially coplanar with the upper surface 312 of the second light-transmitting structure 308.

[0060] The light-transmitting structures 302 and 308 are made of materials that allow light (e.g., infrared, visible light, ultraviolet light, etc.) to pass through them. For example, the light-transmitting structures 202 and 206 may be made of transparent materials, glass materials, silicon materials, or some other transmissive materials or combinations of transmissive materials.

[0061] Figure 4 This is a bottom view showing the mounting surfaces of the optical sensing device 10 and the packages 20 and 30, the bottom view being based on Figures 1A to 1B The optical sensing device 10 and Figures 2A to 3B The orientation of packages 20 and 30 in the package. Contacts 138 are arranged in an array and are used to mount the optical sensing device 10 and packages 20 and 30 within an electronic device or on a PCB using a conductive material such as solder. Contacts 138 in Figure 4 It has a square shape, but can be a circle, triangle, rectangle, or some other shape or combination of shapes.

[0062] Figures 5A to 5G Is manufacturing like Figures 1A to 1B Cross-sectional views of the method for manufacturing the optical sensing device 10 shown. These cross-sectional views of this embodiment of the method for manufacturing the optical sensing device 10 are along the […]. Figure 1B Lines similar to line 1A-1A in the diagram are cut about the optical sensing device 10. In this embodiment, [the following text is incomplete and likely refers to a different concept:] ...and Figures 1A to 1B Features shown in the optical sensing device 10 are the same as or similar to those in the optical sensing device 10. Figures 5A to 5G The same reference numerals are used to denote the same figures.

[0063] Figure 5A This is a cross-sectional view of wafer 500, which includes a first surface 502 and a second surface 504 opposite to the first surface 502. A plurality of photosensitive sensors 100 and a plurality of pads 114 are formed on the first surface 502 of wafer 500.

[0064] exist Figure 5B In this configuration, wafer 500 is temporarily coupled to surface 510 of support 508. Support 508 may be polyimide tape, dummy wafer, dummy substrate, lead frame tape, or some other support. Adhesive 512 is formed on surface 510 of support 508, and wafer 500 is placed on adhesive 512 to couple first surface 502 of wafer 500 to surface 510 of support 508. In some other embodiments, adhesive 512 may have been pre-formed on surface 510 of support 508. Adhesive 512 may be die attach film (DAF), glue, biodegradable adhesive, or some other adhesive. Adhesive 512 may be formed by sputtering, lamination, or some other adhesive forming technique. Wafer 500 may be placed on adhesive 512 by pick-and-place technology, flip chip technology, or some other placement or positioning technology.

[0065] exist Figure 5B After the chip 500 is coupled to the support 508, in Figure 5C In the wafer 500, a plurality of electrical connections 112 and a plurality of openings 118 are formed.

[0066] Electrical connections 112 are formed by first forming a plurality of holes extending into a second surface 504 of the wafer 500 and exposing pads 114. The holes can be formed using etching, drilling, or other forming techniques. After forming the holes, conductive material is deposited to fill the holes, forming vias 113 of the electrical connections 112. Conductive material can be formed in the holes using injection molding, compression molding, reflow molding, or other conductive material forming techniques or combinations thereof.

[0067] An opening 118 is formed between at least one pad in pad 114 and at least one photosensitive element in photosensitive element 100. The opening 118 can be formed by etching, drilling, or some other opening forming technique. The opening 118 extends completely from the first surface 502 of the wafer 500 to the second surface 504.

[0068] After forming the opening 118 and the electrical connection 112, the light emitter 101 is placed in the opening 118 and resin 132 is formed around the light emitter 101 in the opening 118, which allows for... Figure 5D As seen in the image, the light emitter 101 can be placed in the opening 118 by a pick-and-place device. The light emitter 101 is substantially positioned at the center of the opening 118. The emitting surface 124 of the light emitter 101 is placed on the adhesive 512 that couples the light emitter 101 to the support member 508. In some embodiments, the light emitter 101 can be positioned off-center from the opening 118 and can be positioned such that the sidewall 130 of the light emitter 101 contacts the sidewall 120 of the opening 118.

[0069] After the light emitter 101 is placed in the opening 118, resin 132 is formed in the space between the sidewall 130 of the light emitter 101 and the sidewall of the opening 118. The resin 132 can be formed by injection, compression or some other resin forming technique.

[0070] After forming the light emitter 101 and resin 132 in the opening 118, in step 518, a contact portion 138 and a non-conductive layer 140 are formed on the second surface 504 of the wafer 500. This allows for... Figure 5E I saw it in the middle.

[0071] Contact 138 is formed by depositing a conductive layer on the second surface 504 of wafer 500. The conductive layer is selectively etched to remove portions of the conductive layer and form contact 138. The etching can be photoresist etching, chemical etching, dry etching, or some other etching technique. In some embodiments, portions of the conductive layer can be removed by sawing, drilling, grinding, or some other removal technique.

[0072] A non-conductive layer 140 is formed on the plurality of contacts 138 and the second surface 504 of the wafer 500. The non-conductive layer 140 is formed to fill the space between the contacts 138. The non-conductive layer 140 can be formed by deposition, sputtering, lamination or some other non-conductive layer formation techniques.

[0073] After forming the contact portion 138 and the non-conductive layer 140, the adhesive 512 and the support member 508 are removed from the wafer 500, which allows for... Figure 5FAs seen in the image, a pick-and-place machine can be used to remove the adhesive and support 508. In some embodiments, the adhesive 512 may be a biodegradable adhesive that is broken down to remove the support 508 from the wafer 500. For example, the adhesive 512 may be a water-biodegradable adhesive, a chemically biodegradable adhesive, a photodegradable adhesive, or some other biodegradable adhesive.

[0074] After removing the adhesive 512 and the support 508, the wafer 500 is cut into multiple optical sensing devices 10, such as... Figure 5G As shown in the diagram, wafer 500 is cut between electrical connections 112 in wafer 500 and is cut by cutting device 524. Cutting device 524 may be a saw, laser, cutter or some other cutting device.

[0075] Figure 5H An optical sensing device is shown in an optical sensing device 10 formed by cutting a wafer 500.

[0076] Figures 6A to 6E Is it like this? Figures 2A to 2B Cross-sectional views of a manufacturing method for the plurality of packages 20 shown. These cross-sectional views of this embodiment of the manufacturing method are along the […]. Figure 2B Lines similar to line 2A-2A in the example are cut about package 20. This embodiment is similar to... Figures 2A to 2B The package 20 has the same or similar features in Figures 6A to 6E The same reference numerals are used to denote the elements. In this method, the same reference numerals are followed. Figures 5A to 5F The same steps are used in the method for manufacturing the optical sensing device 10.

[0077] After removing the adhesive 512 and the first support 508, the non-conductive layer 140 on the second surface 504 of the wafer 500 is temporarily coupled to the second support 602 by the adhesive 604, which can... Figure 6A As seen in the image, the support 602 can be a polyimide tape, a dummy wafer, a dummy substrate, a lead frame tape, or some other support. The adhesive 604 can be DAF, glue, biodegradable adhesive, or some other adhesive. The adhesive 604 is formed on the surface 605 of the support 602. The adhesive 604 is used to adhere to... Figure 5BThe adhesive 512 shown is formed on surface 510 of support 508 in a similar manner to surface 605 of support 602. In some other embodiments, adhesive 604 may have been pre-formed on surface 605 of support 602. Non-conductive layer 140 and wafer 500 are coupled to adhesive 604 by a pick-and-place mechanism. In some embodiments, support 602 may be coupled to non-conductive layer 140 before support 508 is removed from first surface 502 of wafer 500, and support 508 may be removed after support 602 is coupled to non-conductive layer 140.

[0078] After the non-conductive layer 140 is coupled to the support 602, bonding wires 211, a first light-transmitting structure 202, and a second light-transmitting structure 206 are formed on the first surface 502 of the wafer 500. This allows for... Figure 6B I saw it in the middle.

[0079] The bonding wire 211 can be formed using any wire bonding technique. (See also: Regarding...) Figure 2A The bonding wire 211 discussed is coupled between the light emitter 101 and some electrical connections 112 in the chip 500.

[0080] The first light-transmitting structure 202 can be formed using a combination of injection molding, compression molding, etching, and deposition techniques, or some other forming techniques or combinations thereof. For example, when using compression molding, a molding tool with an opening is placed on the first surface 502 of the wafer 500, and the opening in the molding tool is aligned with the light sensor 100. Then, a light-transmitting material is compressed into the opening of the molding tool to form a plurality of first light-transmitting structures 202. In some embodiments, the plurality of first light-transmitting structures 202 can be pre-formed and placed on the light sensor by a pick-and-place machine, and coupled to the light sensor by a light-transmitting adhesive.

[0081] The second light-transmitting structure 206 can be formed in a similar or identical manner to that discussed above with respect to the first light-transmitting structure 202. In some embodiments, the second light-transmitting structure 206 can be pre-formed to include a plurality of bonding lines 211. When the second light-transmitting structure is pre-formed, it is placed on the light emitter by a pick-and-place machine and coupled to the light emitter 101 by a light-transmitting adhesive.

[0082] A first light-transmitting structure 202 and a second light-transmitting structure 206 can be simultaneously formed using a molding tool having openings aligned with the light sensor 100 and openings aligned with the light emitter 101. These openings are then filled with a light-transmitting material to form the first light-transmitting structure 202 and the second light-transmitting structure 206.

[0083] After forming the bonding lines 211 and the light-transmitting structures 202 and 206, a molding compound layer 610 is formed on the first surface 502 of the wafer 500 and on the first light-transmitting structure 202 and the second light-transmitting structure 206. This allows for... Figure 6C As seen in the image, the molding compound layer 610 is formed. Figure 2A The molding compound 212 of the package 20 is used. The molding compound layer 610 can be formed by injection molding, compression molding, lamination molding, or some other forming techniques or combinations thereof. If the molding compound layer 610 is formed by compression molding, the molding compound is injected onto the first surface 502 of the wafer 500 and onto the first light-transmitting structure 202 and the second light-transmitting structure 206, and the molding compound is compressed by a compression molding tool to position the molding compound between the first light-transmitting structure 202 and the second light-transmitting structure 206.

[0084] A first opening 214 and a second opening 218 are formed in a molding compound. The first opening 214 is aligned with the light sensor 100 and the first light-transmitting structure 202. The second opening 218 is aligned with the light emitter 100 and the second light-transmitting structure 206. The first opening 214 and the second opening 218 can be formed by drilling, sawing, etching, or some other forming techniques.

[0085] In some embodiments, a molding tooling forming technique is used to simultaneously form a molding compound layer 610, a first opening 214, and a second opening 218. In this technique, a molding tool is placed on a first light-transmitting structure 202, a second light-transmitting structure 206, and a first surface 502 of the wafer 500. After the molding tool is placed, the molding compound layer 610 is formed by forming a molding compound on the molding tool to fill the openings within it. The molding tool also includes an outwardly projecting portion to form the first opening 214 and the second opening 218 simultaneously with the formation of the molding compound layer 610. In other words, the molding tool defines the shape and size of the molding compound layer 610.

[0086] After forming the molding compound layer 610, the first opening 214, and the second opening 218, the wafer 500 is diced into packages 20, which can be... Figure 6D As seen in the image, at some locations between some first light-transmitting structures 202 and some second light-transmitting structures 206, the wafer 500 and various components on the wafer 500 are cut by a cutting tool 618. The cutting tool 618 can be a cutting device, a laser device, a saw device, or some other cutting device.

[0087] Figure 6E It shows the result of Figures 6A to 6DOne of the packages in the package 20 formed by the manufacturing method shown is a wafer 500 cut by a cutting device 618.

[0088] Figures 7A to 7E Is it like this? Figures 3A to 3B Cross-sectional views of a manufacturing method for the plurality of packages 30 shown. These cross-sectional views of this embodiment of the manufacturing method are along the […]. Figures 3A to 3B Lines similar to 3A-3A in the diagram are cut about package 30. This embodiment is similar to... Figures 3A to 3B The package 30 has the same or similar features in Figures 7A to 7E The same reference numerals are used to denote the components. In this manufacturing method, the same steps as those used in manufacturing package 20 are followed until… Figure 6A until.

[0089] After coupling the non-conductive layer 140 to the support 602, a molding compound layer 702 is formed on the first surface 502 of the wafer 500, which can... Figure 7A I saw it in the middle.

[0090] The molding compound layer 702 forms the molding compound 212 of the package 30. The molding compound layer 702 can be formed using compression molding, injection molding, deposition molding, or some other forming techniques or combinations thereof. If the molding compound layer 702 is formed using compression molding, the molding compound layer 702 is placed on the first surface 502 of the wafer 500 and then compressed into place by a compression molding tool.

[0091] After forming the molding compound layer 702, a plurality of first openings 704 are formed in the molding compound layer 702. The first openings 704 are formed to be aligned with and expose the light sensor 100, respectively. The second openings 706 are formed to be aligned with and expose the light emitter 101, respectively. A portion of the molding compound layer 702 can be removed by drilling, etching, cutting, sawing, or some other forming techniques or combinations thereof to form the first openings 704 and the second openings 706.

[0092] In some embodiments, the first opening 704 and the second opening 706 may be formed during the formation of the molding compound layer 702. For example, when the molding compound layer 702, the first opening 704, and the second opening 706 are formed using a molding tooling forming technique, they are formed simultaneously. In this molding tooling forming technique, a molding tool is placed on the second surface 504 of the wafer 500. After the molding tool is placed, the molding compound layer 702 is formed by forming a molding compound on the molding tool to fill the openings in the molding tool. The molding tool also includes a portion protruding outward from the molding tool to form the first opening 704 and the second opening 706 simultaneously with the formation of the molding compound layer 702. In other words, the molding tool defines the shape and size of the molding compound layer 702.

[0093] After forming the molding compound layer 702 and openings 704 and 706, a plurality of bonding lines 211 are formed in the second opening 706, which can... Figure 7B As seen in [the image], multiple bonding lines 211 are used with... Figure 6B It is formed in a similar manner to that discussed in step 608 regarding the multiple bond lines 211.

[0094] After forming multiple bonding lines 211, multiple first light-transmitting structures 302 and multiple second light-transmitting structures 308 are formed in the openings 704 and 706, which can... Figure 7C As seen in the image, multiple first light-transmitting structures 302 are formed in multiple first openings 704, and multiple second light-transmitting structures 308 are formed in multiple second openings 706. The multiple first and second light-transmitting structures can be formed using injection molding, compression molding, deposition molding, or some other forming techniques. For example, if compression molding is used, light-transmitting material is injected into the openings 704 and 706, and a compression molding tool is used to compress the light-transmitting material into place to form the light-transmitting structures 302 and 308.

[0095] After forming multiple first light-transmitting structures 302 and second light-transmitting structures 308, the wafer 500 and various components on the wafer 500 are cut into packages 30, which can... Figure 7D As seen in the image, the wafer 500 is cut between multiple electrical connections 112 within the wafer 500. At a location between the first light-transmitting structure 302 and the second light-transmitting structure 308, the wafer 500 and various components on the wafer 500 are cut using a cutting tool 714. The cutting tool 714 can be a cutting device, a laser device, a saw device, or some other cutting device.

[0096] Figure 7E It is by Figures 7A to 7DOne of the packages in the package 30 formed by the manufacturing method shown is a wafer 500 and various components on the wafer 500 are cut by a cutting device 714. In other words, Figure 7E yes Figure 3A The copy of package 30 in the middle.

[0097] Typically, prior art semiconductor device packages include a photosensitive die and a photoemitting die stacked on the photosensitive die. Furthermore, these prior art semiconductor device packages typically include a substrate, a cover, and a lens. The photosensitive die and the cover are coupled to the substrate, and the photoemitting die is coupled to the surface of the photosensitive die. The cover is coupled to the substrate via adhesive, and the lens is coupled to the cover.

[0098] Typically, prior art semiconductor device packages have a light emitter die stacked on the surface of a light sensor die, and both are stacked on a substrate. A cap is then coupled to the substrate to cover both the light sensor die and the light emitter. In contrast, in this disclosure, unlike the stacked configuration in prior art semiconductor device packages, the light emitter is embedded within the sensor die. Furthermore, the light sensor die and embedded light emitter of this disclosure are not stacked on the substrate coupled to the cap. Therefore, when compared to prior art semiconductor device packages, because the light emitter is embedded within the sensor die 102 rather than stacked on the sensor die 102, the semiconductor device package of this disclosure has a reduced profile, thickness, and size.

[0099] Typically, prior art semiconductor device packages have a cover as described above. When the cover covers and protects the photosensor and photoemitting device of the prior art semiconductor device package, gap spaces must be provided between the photosensor and photoemitting device in the x, y, and z directions. By eliminating the requirement for a cover as in packages 20 and 30 of this disclosure, the package has a smaller profile in the x, y, and z directions than prior art semiconductor device packages including a cover.

[0100] The structures of the optical sensing device 10 and packages 20, 30 disclosed herein avoid the use of covers and substrates found in prior art semiconductor device packages. The packages 20, 30 and the optical sensing device 10 of this disclosure eliminate the need for covers and substrates found in prior art semiconductor device packages, reducing the possibility of failure due to differences in expansion and contraction, because less material is used in the packages 20, 30 of this disclosure.

[0101] Furthermore, the cap and substrate of prior art semiconductor device packages have a higher CTE than lenses and dies. Due to the differences in expansion and contraction between the cap, substrate, lens, and die of prior art semiconductor device packages, this often leads to adhesive failure. Such failure in prior art semiconductor packages can cause the cap to misalign or break off completely from the substrate. Therefore, by avoiding the use of substrates, caps, and adhesives coupling the cap to the substrate, the packages 20, 30 and the optical sensing device 10 of this disclosure are superior to these prior art semiconductor packages.

[0102] Examples of possible CTE values ​​for various components in the structural components of prior art semiconductor device packages are as follows: a cover may have a coefficient of thermal expansion (CTE) of approximately 28 ppm / °C, a lens may have a CTE of approximately 7 ppm / °C, a die may have a CTE of approximately 2.8 ppm / °C, an adhesive may have a CTE of approximately 30 ppm / °C, and a substrate may have a CTE of approximately 14 ppm / °C.

[0103] Examples of possible CTE values ​​for various components in the structural components of the semiconductor device packages 10, 20, and 30 of this disclosure are as follows: Transmitting structures 202, 206, 302, and 308 have a coefficient of thermal expansion (CTE) of approximately 7 ppm / °C. Molding compound 212 has a CTE of approximately 10 ppm / °C. Semiconductor substrate 102 has a CTE of approximately 2.8 ppm / °C. These CTE values ​​for these various components are similar to those in prior art semiconductor device packages. The similar CTE values ​​of semiconductor device packages 10, 20, and 30 are better than the larger differences in CTE values ​​among the various components constituting the prior art semiconductor device packages as described above. The more similar CTE values ​​of the currently disclosed semiconductor device packages 10, 20, and 30 reduce the amount of difference in expansion and contraction between the separated structural components of semiconductor device packages 10, 20, and 30, which reduces the possibility of expansion and contraction damaging semiconductor device packages 10, 20, and 30.

[0104] Typically, prior art semiconductor device packages have lenses coupled to a cover, which are aligned with a light emitter and a light sensor. However, if the cover becomes misaligned, as previously mentioned, light emitted by the light emitter and reflected from an external object may no longer be able to reach the light sensor. In this disclosure, the light-transmitting structure is directly on the light sensor and the light emitter. This reduces the likelihood that the light sensor will fail to receive light emitted from the light emitter and reflected from an external object, because the light-transmitting structure is less likely to break or become misaligned. Even if the light-transmitting structure becomes slightly misaligned, light will still likely be able to be emitted by the light emitter and properly received by the light sensor, allowing the packages 20, 30 of this disclosure to still function. Therefore, the packages 20, 30 of this disclosure are more robust than prior art semiconductor device packages.

[0105] The method described herein offers several advantages over existing techniques. For example, forming the light-transmitting structure and molding compound directly on the embedded optical sensor and embedded light emitter within the sensor die allows the packages 20, 30 of this disclosure to be thinner than prior art packages that utilize caps, lenses, and substrates. Many prior art devices employ such caps to cover and protect the die, sensor, and light emitter. Therefore, by forming the light-transmitting structure and molding compound directly on the surface of the sensor die, the overall profile, thickness, and size of the packages 20, 30 can be manufactured to be smaller and fewer than those of prior art semiconductor device packages utilizing caps and substrates.

[0106] Another advantage of the method described herein compared to existing techniques is the increased allowable tolerances. For example, if the light-transmitting material does not completely cover the bond lines, but rather the molding compound covers only a portion of the bond lines, the semiconductor device package including this deformation will still likely function because the light emitter and light sensor of the sensor die will still work. Therefore, the yield of usable semiconductor device packages formed using the method of this disclosure will increase compared to existing manufacturing methods.

[0107] Another advantage is avoiding the precise tolerances of existing technology methods, which can further increase the yield of available semiconductor device packages. Typically, existing methods use pick-and-place machines to couple the cover to the substrate with adhesive at a high level of precision. This high level of precision increases manufacturing costs and reduces the yield of available semiconductor device packages.

[0108] While these are some of the advantages of this disclosure over prior art sensor dies, semiconductor device packages and methods of manufacturing thereof, the advantages listed above are not an exhaustive list and there may be other additional advantages over prior art sensor dies, semiconductor device packages and methods of manufacturing thereof.

[0109] The various embodiments described above can be combined to provide other embodiments.

[0110] Based on the detailed description above, these and other changes can be made to the embodiments. Generally, the terminology used in the appended claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full scope of equivalents to which such claims are conferred. Therefore, the claims are not limited by the disclosure.

Claims

1. An apparatus comprising: A sensor die has a first surface, a second surface opposite to the first surface, and a sensor located on the first surface; A first opening extends into a portion of the sensor die, the first opening extending from the first surface of the sensor die completely through the portion of the sensor die to the second surface of the sensor die, and the first opening is spaced apart from the sensor of the sensor die; A light emitter, in the opening, has a third surface substantially coplanar with the first surface of the sensor die; An opaque resin is present in the opening and on the sidewall of the light emitter, extending from the first surface of the sensor die to the second surface of the sensor die, and the opaque resin includes a fourth surface adjacent to the third surface; as well as The first light-transmitting structure is located on the third surface of the light emitter and on the fourth surface of the opaque resin.

2. The apparatus of claim 1, further comprising a molding compound on the first surface of the sensor die and on the sidewall of the first light-transmitting structure, wherein the sidewall of the first light-transmitting structure is transverse to the first surface.

3. The apparatus of claim 2, wherein the surface of the molding compound is substantially coplanar with the surface of the first light-transmitting structure, and the surface of the first light-transmitting structure faces away from the sensor die and is transverse to the sidewall of the first light-transmitting structure.

4. The apparatus of claim 2, wherein the molding compound is located on the surface of the first light-transmitting structure, and the molding compound includes a second opening exposing the surface of the first light-transmitting structure, and the surface of the first light-transmitting structure is transverse to the sidewall of the first light-transmitting structure.

5. The apparatus of claim 1, wherein the second light-transmitting structure is on the sensor of the sensor die.

6. The apparatus of claim 5, further comprising a molding compound on the first surface of the sensor die, on the sidewall of the first light-transmitting structure, and on the sidewall of the second light-transmitting structure.

7. The apparatus of claim 6, wherein the surface of the molding compound is substantially coplanar with the surfaces of the first light-transmitting structure and the second light-transmitting structure, the surface of the first light-transmitting structure being transverse to the sidewall of the first light-transmitting structure, and the surface of the second light-transmitting structure being transverse to the sidewall of the second light-transmitting structure.

8. The apparatus according to claim 6, further comprising: A second opening, in the molding compound, exposes the surface of the first light-transmitting structure, the molding compound at the surface of the first light-transmitting structure, and the surface of the first light-transmitting structure is transverse to the sidewall of the first light-transmitting structure; as well as A third opening, in the molding compound, exposes the surface of the second light-transmitting structure, the molding compound at the surface of the second light-transmitting structure, and the surface of the second light-transmitting structure is transverse to the sidewall of the second light-transmitting structure.

9. The apparatus of claim 1, further comprising a bonding wire in the first light-transmitting structure, wherein the bonding wire couples the light emitter to the sensor die.

10. The apparatus of claim 1, wherein the first light-transmitting structure is on the first surface and on the opaque resin.

11. The apparatus of claim 10, wherein the light emitter further comprises a fourth surface substantially coplanar with the second surface of the sensor die.

12. A method comprising: An opening is formed in a passive portion extending to a first surface of the wafer, the opening extending from the first surface through the portion of the wafer to a second surface of the wafer opposite to the first surface; The electrical component is placed in the opening, and the third surface of the electrical component is positioned substantially coplanar with the first surface of the wafer; as well as An opaque resin is formed between the sidewall of the electrical component and the sidewall of the opening, the resin surrounding the electrical component, the opaque resin extending from the first surface of the wafer to the second surface of the wafer, and the opaque resin including a fourth surface adjacent to the third surface.

13. The method of claim 12, further comprising: Conductive contacts are formed on a second surface of the wafer, the second surface being opposite to the first surface of the wafer; Bonding wires are formed on the first surface of the wafer, the bonding wires coupling the electrical components to electrical connections in the wafer; A light-transmitting material is formed on the electrical components and the bonding wires; A molding compound is formed on the first surface of the wafer, the molding compound covering the light-transmitting material; as well as An opening is formed in the molding compound, the opening exposing the surface of the light-transmitting material.

14. The method of claim 12, further comprising: A contact portion is formed on a second surface of the wafer, the second surface being opposite to the first surface of the wafer; A molding compound is formed on the first surface of the wafer; Bonding wires are formed in the openings of the molding compound, the bonding wires coupling the electrical components to electrical connections in the wafer; as well as A light-transmitting material is formed on the electrical components, on the bonding lines, and in the openings of the molding compound.

15. The method of claim 14, wherein forming the light-transmitting material further comprises: The light-transmitting material is formed having a surface substantially coplanar with the surface of the molding compound.

16. An apparatus comprising: A semiconductor substrate having: a first surface; and a second surface opposite to the first surface; One or more first sidewalls extend from the first surface to the second surface and are transverse to the first surface and the second surface; An opening extends from the first surface completely through the semiconductor substrate to the second surface; and one or more first sidewalls surrounding the opening; An optical sensor is embedded in the semiconductor substrate at a first portion of the first surface; A light emitter die is embedded in the semiconductor substrate and within the opening. The light emitter die includes one or more second sidewalls spaced inwardly from the one or more first sidewalls. The light emitter die is located at a second portion of the first surface, which is spaced from a first portion of the first surface. The light emitter die includes a third surface and an emitter located at the third surface, which faces away from the second surface of the semiconductor substrate. An opaque resin is embedded in the semiconductor die and in the opening. The opaque resin is positioned on one or more second sidewalls of the light emitter die and on one or more first sidewalls of the semiconductor substrate. The opaque resin extends from the first surface of the semiconductor substrate to the second surface of the semiconductor substrate. The opaque resin includes a fourth surface that is adjacent to the third surface and faces away from the second surface of the semiconductor substrate. as well as A light-transmitting structure is located on the third surface of the light emitter die and the fourth surface of the opaque resin.

17. The apparatus of claim 16, wherein the third surface of the light emitter die is substantially coplanar with the first surface of the semiconductor substrate and the fourth surface of the opaque resin, and the fourth surface of the opaque resin surrounds the third surface of the light emitter die.

18. The apparatus of claim 16, wherein the opaque resin extends from the one or more sidewalls of the light emitter die to the one or more second sidewalls of the semiconductor substrate.

19. The apparatus of claim 16, further comprising: Bonding pads on the first surface of the semiconductor substrate; Contact pads on the second surface of the semiconductor substrate; A conductive via, in the semiconductor substrate, couples the bonding pad to the contact pad; as well as Conductive traces are provided on the first surface of the semiconductor substrate, which couple the bonding pads to the optical sensor.

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