Substrate processing apparatus and substrate processing method

Abstract

This invention provides a substrate processing apparatus and a substrate processing method. Specifically, it provides an apparatus and method for processing a substrate using a supercritical fluid. In one embodiment, the apparatus may include: a process chamber providing a processing space and including a chamber heater for increasing the internal temperature of the processing space; a substrate support provided in the processing space and supporting the substrate; and a substrate heating member that heats the lower surface of the substrate upon contact with the lower surface of the substrate.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0085276, filed with the Korean Intellectual Property Office on July 10, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] As design rules for integrated circuit devices decrease, the critical dimensions of semiconductor devices are approximately 20 nm or 30 nm or smaller. Therefore, processes are needed to form deep and narrow patterns with a relatively high aspect ratio of approximately 5 or higher, followed by cleaning and drying processes. Methods using supercritical fluids have been proposed for performing specific processing steps (e.g., etching, cleaning, and drying) on ​​substrates with high aspect ratio structures.

[0005] In drying methods using supercritical fluids, when the interior of the process chamber meets the conditions of high temperature and high pressure, single-phase isopropanol (IPA) and carbon dioxide (CO2) can be achieved. IPA forms a liquid film on the substrate (e.g., a wafer), and gradually reacts from the surface of the liquid film and is dried.

[0006] According to conventional techniques, when heat is not directly applied to the substrate, the temperature of the substrate rises as high-temperature CO2 is injected. As a result, not all IPAs on the substrate may be replaced and some may remain, which may lead to drying errors if the reaction time is insufficient or the amount of CO2 supplied is insufficient.

[0007] Furthermore, according to conventional techniques, after forming a liquid film on a substrate using room-temperature IPA, the substrate is introduced into the process chamber. Then, after placing the substrate introduced into the process chamber onto a support member supporting the substrate, and closing the process chamber to begin the process, the substrate can either remain on the support member as is, or it can be placed on a pin in a structure installed at the bottom of the process chamber. The substrate is spaced apart from the upper side of the process chamber and from the upper surface of the structure installed at the bottom of the process chamber to keep the substrate from directly receiving heat from a heat source. To ensure the mixture of IPA and CO2 is in a single phase, the temperature must be above 80°C and the pressure above 108 bar. Since IPA does not directly receive heat, raising the temperature of the room-temperature IPA formed on the substrate with the liquid film requires a significant amount of time. Summary of the Invention

[0008] The present invention provides a substrate processing apparatus and a substrate processing method, wherein the substrate processing apparatus can effectively process substrates.

[0009] The present invention provides a substrate processing apparatus and a substrate processing method, which can further improve the tilting phenomenon during substrate drying.

[0010] The present invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus can more rapidly increase the temperature of the anti-drying liquid to reduce the time required for the substrate to reach the supercritical phase, and when the substrate is processed by supercritical fluid, the unit per equipment hour (UPEH) can be improved.

[0011] The present invention provides a substrate processing apparatus and a substrate processing method. When the substrate has a pattern with a high aspect ratio, the substrate processing apparatus can more effectively remove anti-drying liquid.

[0012] The inventive concept is not limited thereto, and those skilled in the art will clearly understand other aspects of the invention not mentioned from the following description.

[0013] The present invention provides an apparatus for processing a substrate using a supercritical fluid. In one embodiment, the apparatus may include: a process chamber that provides a processing space and includes a chamber heater for increasing the internal temperature of the processing space; a substrate support provided in the processing space and supporting the substrate; and a substrate heating member that heats the lower surface of the substrate upon contact with the lower surface of the substrate.

[0014] In one embodiment, a liquid film can be formed on a substrate treated with a supercritical fluid using a drying preventing liquid.

[0015] In one embodiment, the substrate heating member can heat the substrate to a temperature at which the anti-drying liquid reacts with the substrate surface, exhibiting the Leidenfrost effect.

[0016] In one embodiment, the substrate heating member can heat the substrate to above the transition boiling point of the anti-drying liquid.

[0017] In one embodiment, the substrate heating member can heat the substrate to above 110°C.

[0018] In one embodiment, the chamber heater and the substrate heating element can be controlled independently.

[0019] In one embodiment, the substrate heating member may have a region corresponding to the entire surface of the substrate.

[0020] In one embodiment, the process chamber can be formed by combining an upper chamber and a lower chamber, the lower chamber being coupled to the upper chamber by moving upward / downward relative to the upper chamber and forming a sealed space by coupling with the upper chamber, and a substrate support member being coupled to the upper chamber, and a substrate heating member being coupled to the lower chamber.

[0021] In one embodiment, the device may further include a first supply port connected to a first supply line that supplies the processing liquid to a portion of the processing space of the process chamber located at the lower part of the substrate. A substrate heating member may be disposed between the first supply port and the substrate support member and may interrupt the direct injection of supercritical fluid from the first supply port onto the substrate.

[0022] In one embodiment, the substrate heater can be embedded inside the substrate heating member and can heat the substrate with the heat generated by the substrate heating member.

[0023] In one embodiment, a substrate heater may be provided inside the lower chamber, which heats a substrate heating member, and the substrate heating member may receive the heat generated by the substrate heater and heat the substrate.

[0024] In one embodiment, the lower chamber may be formed of stainless steel.

[0025] In one embodiment, the lower chamber and the substrate heating member can be connected to each other using a material having a set thermal conductivity or higher.

[0026] In one embodiment, the substrate heating element may be formed of stainless steel.

[0027] According to another aspect of the present invention, an apparatus for processing a substrate using a supercritical fluid may include: a process chamber providing a processing space and including a chamber heater for increasing the internal temperature of the processing space; a substrate support provided in the processing space and supporting the substrate; a lifting pin for raising and lowering the substrate from the substrate support such that the substrate support contacts the substrate or spacees the substrate support from the substrate; and a substrate heating member for heating the substrate in contact with the substrate support.

[0028] In one embodiment, an anti-drying liquid can be used to form a liquid film on a substrate processed by supercritical fluid, and a substrate heating member can heat the substrate to a temperature at which the anti-drying liquid reacts with the surface of the substrate to exhibit the Leidenfrost effect.

[0029] In one embodiment, the chamber heater and the substrate heating element can be controlled independently.

[0030] In one embodiment, the substrate heating element may be formed of stainless steel.

[0031] The present invention provides a method for processing a substrate using a supercritical fluid. In one embodiment, the method may include: transporting the substrate to the interior of a processing space, forming a liquid film of an anti-drying liquid on the substrate; heating the substrate to a temperature at which the anti-drying liquid reacts with the surface of the substrate to exhibit the Leidenfrost effect; and supplying the supercritical fluid to the substrate and drying the supercritical fluid.

[0032] In one embodiment, heating of the substrate can be performed when the interior of the processing space is below supercritical pressure. Attached Figure Description

[0033] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the figures, and wherein:

[0034] Figure 1 A view of a substrate processing apparatus according to a first embodiment of the present invention is shown for illustrative purposes.

[0035] Figure 2 and Figure 3 The states of a substrate processing apparatus according to a first embodiment of the present invention, controlled according to the sequence of processes performed by using the substrate processing apparatus, are shown sequentially.

[0036] Figure 4 and Figure 5 A cross-sectional view of a substrate processed according to an embodiment of the present invention is shown, and a process for processing the substrate in sequence is also shown.

[0037] Figure 6 A graph showing the pressure change in the processing space during the process performed by the substrate processing apparatus;

[0038] Figure 7 A view of a substrate processing apparatus according to a second embodiment of the present invention is shown for illustrative purposes.

[0039] Figures 8 to 13The substrate processing apparatus according to a third embodiment of the present invention and the operation of processing a substrate using the substrate processing apparatus are illustrated in a schematic sequence.

[0040] Figure 14 A view of a substrate processing apparatus according to a fourth embodiment of the present invention is shown for illustrative purposes.

[0041] Figure 15 A flowchart illustrating a method for processing a substrate according to an embodiment of the invention using a substrate processing apparatus according to a fourth embodiment of the invention; and

[0042] Figure 16 A flowchart illustrating a method for processing a substrate according to another embodiment using a substrate processing apparatus according to a fourth embodiment of the present invention is provided. Detailed Implementation

[0043] Hereinafter, exemplary embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings. Embodiments of the invention may be modified in various ways, and the scope of the inventive concept should not be construed as limited to the following embodiments. Embodiments of the inventive concept are provided to describe the inventive concept more completely to those skilled in the art. Therefore, the shapes of the components in the drawings are exaggerated to emphasize their clearer description.

[0044] Figure 1 A view of a substrate processing apparatus according to a first embodiment of the present invention is shown for illustrative purposes.

[0045] Reference Figure 1 The substrate processing apparatus 10 may include a substrate processing unit 1000 that supports a substrate (e.g., a wafer) and processes the substrate using a supercritical process; a supercritical fluid generator 200 that generates supercritical fluid; a fluid supply unit 300 that supplies supercritical fluid from the supercritical fluid generator 200 to process chambers 110 and 120; and a fluid discharge unit 400 that discharges supercritical fluid from process chamber 100.

[0046] Supercritical processes may include cleaning processes, drying processes, etching processes, etc., using supercritical fluids, and drying processes will be representatively exemplified in the description of the inventive concept in the specification.

[0047] Supercritical fluids can be substances that, like gases, exhibit dispersibility, viscosity, and surface tension, and, like liquids, possess temperatures and pressures above their solubility threshold. Examples of supercritical fluids include carbon dioxide (CO2), water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4), propylene (C2H2), methanol (CH3OH), ethanol (C2H5OH), sulfur hexafluoride (SF6), and acetone (C3H8O).

[0048] In one embodiment, the substrate processing unit 1000 may include process chambers 110 and 120, a substrate support 130, a first supply port 122, a second supply port 112, and an exhaust port 124. The substrate processing unit 1000 can dry the substrate "W" on which it has undergone a rinsing process by using a processing fluid in a supercritical state. In one embodiment, carbon dioxide (CO2) can be used as the processing fluid.

[0049] Process chambers 110 and 120 can provide processing spaces 102 and 104 for drying the substrate. Processing spaces 102 and 104 can include a process region 102 and a buffer region 104. The process region 102 can be the area where the patterned surface on the substrate is located, and the buffer region 104 can be the area below the substrate.

[0050] Process chambers 110 and 120 may include an upper chamber 110 and a lower chamber 120. The upper chamber 110 may include an upper wall and a first side wall. The upper wall of the upper chamber 110 may serve as the upper wall of the process chamber. The first side wall of the upper chamber 110 may serve as a portion of the side wall of the process chamber. The lower chamber 120 may include a lower wall and a second side wall. The lower wall of the lower chamber 120 may serve as the lower wall of the process chamber. The second side wall of the lower chamber 120 may serve as a portion of the side wall of the process chamber.

[0051] Since the upper chamber 110 and the lower chamber 120 are moved relative to each other by a drive mechanism (not shown), the upper and lower chambers can engage with each other, allowing the switching between a closed position for closing process chambers 110 and 120 and an open position for opening process chambers 110 and 120. For example, at least one of the upper chamber 110 and the lower chamber 120 can move up and down along an elevation rod to couple or separate from each other. In the open position of process chambers 110 and 120, a substrate can be loaded or unloaded. In the closed position of process chambers 110 and 120, a supercritical drying process for the substrate can be performed.

[0052] The substrate support 130 can be disposed in the process chambers 110 and 120, and can support the substrate "W" when it is loaded into the process chambers 110 and 120. The substrate support 130 can support the substrate when it is in the open position of the process chambers 110 and 120, when it is loaded into the process chambers 110 and 120, and when it is unloaded from the process chambers 110 and 120. Furthermore, the substrate support 130 can support the substrate when it is being processed in the process chambers 110 and 120.

[0053] The substrate support 130 may include a first vertical rod 132 (see...) Figure 2 ) and the first horizontal bar 134 (see Figure 2 The first vertical rod extends from the upper wall of the upper chamber 110 to the lower side, and the first horizontal rod extends horizontally from one end of the first vertical rod 132. Furthermore, the substrate support 130 may include a first support protrusion (not shown) that protrudes from the first horizontal rod 134 and supports the substrate in contact with the edge region of the substrate. The two substrate supports 130 are configured to be spaced apart from each other by a distance corresponding to the substrate diameter. Therefore, the substrate supports 130 can support the edge region of the substrate.

[0054] The substrate processing unit 1000 may include a substrate heating member 140 disposed between the lower wall of the lower chamber 120 and the substrate support member 130. As will be described in detail below, the substrate heating member 140 directly heats the substrate in direct contact with the lower surface of the substrate supported by the substrate support member 130. The substrate heating member 140 has a region corresponding to the entire surface of the substrate. Preferably, when viewed from above, the substrate heating member 140 has a circular shape.

[0055] The substrate heating member 140 can be mounted at a predetermined distance from the lower wall of the lower chamber 120. The substrate heating member 140 can be fixed to the lower wall of the lower chamber 120 by a support rod 142. The substrate heating member 140 may include a plate of a specific thickness occupying a specific space in the buffer region 104. The substrate heating member 140 can prevent supercritical fluid from the first supply port 122 from being directly sprayed onto the rear surface of the substrate "W".

[0056] Furthermore, due to the substrate heating member 140, the volume of the buffer region 104 can be reduced. The volume of the buffer region 104 can be smaller than the volume of the process region 102. Therefore, the amount of processing fluid present in the buffer region 104 below the substrate "W" can be less than the amount of processing fluid present in the process region 102 on the substrate "W". The substrate heating member 140 can reduce the amount of processing liquid used for the drying process by providing a structure in the buffer space below the substrate W to reduce the process time and maintain process performance, thereby reducing the buffer space.

[0057] In addition, a space can be provided between the lower chamber 120 of the substrate heating member 140 and the lower wall to provide the flow direction of the fluid inside the high-pressure process chamber.

[0058] After the process fluid is stored at high pressure in the supercritical fluid generator 200, and is introduced into the drying process chamber via pipelines L1, L11, and L12 and valves 310, 330, and 332 of the fluid supply unit 300, cooling may occur at the connection points between valves 310, 330, and 332 and the pipelines due to pressure drop. During this process, the process fluid may be liquefied or solidified and left behind due to particulate contaminants or other impurities that can cause solidification. Therefore, it is important to maintain the temperature of the process fluid above a threshold value. Furthermore, since simply maintaining the temperature of the pipelines is insufficient to adequately transfer heat to the gaseous or supercritical solvent as the pressurization rate increases, pressurization or pressure release time can be easily controlled by minimizing phase change and reducing density changes due to temperature when the supercritical fluid flows from the supercritical fluid generator 200 to the drying process chamber 100 via additional heat exchangers 351, 352, and 354 (or a temperature regulating jacket).

[0059] The first supply port 122 can be installed in the lower chamber 120. The first supply port 122 can be installed on the lower wall of the lower chamber 120. Processing fluid can be supplied through the first supply port 122 to the buffer area 104 located below the substrate "W".

[0060] The second supply port 112 can be installed in the upper chamber 110. The second supply port 112 can be installed in the central region of the upper wall of the upper chamber 110. Processing fluid can be supplied to the process area 102 located on the substrate "W" through the second supply port 112.

[0061] Discharge port 124 can be installed in lower chamber 120. Discharge port 124 can be located on the lower wall of lower chamber 120 adjacent to first supply port 122. Discharge port 124 is connected to discharge line L2. Discharge valve 410 is installed in discharge line L2. Discharge port 124 can discharge fluid used in supercritical fluid processes from the processing space of the process chamber. Chemicals can dissolve in the discharged processing fluid. The processing fluid discharged from discharge port 124 can be drained or supplied to a recirculation unit (not shown) and separated into supercritical fluid and organic solvent.

[0062] The substrate processing unit 1000 may include heaters provided in at least one of the upper and side walls of the upper chamber 110 and the lower and side walls of the lower chamber 120. The heaters can heat the interior of the process chambers such that the processing fluid supplied to the interior of the process chambers remains above a threshold. For example, the heaters may include a first heater 116 disposed in the upper chamber 110 and a second heater 126 disposed in the lower chamber 120.

[0063] Furthermore, the substrate processing unit 1000 includes a substrate heater 145 in the lower chamber 120. Preferably, the substrate heater 145 is configured adjacent to a support rod 142 connected to the substrate heating member 140. The substrate heater 145 is heated and transfers heat to the substrate heating member 140 via the support rod 142. The substrate heating member 140 directly heats the lower surface of the substrate upon contact with the lower surface of the substrate being transported in. A liquid film is formed on the patterned surface of the substrate with an anti-drying liquid, the substrate being transported to the substrate processing unit 1000 and processed, and the patterned surface of the substrate corresponds to the upper surface of the substrate, and the substrate heating member 140 heats the substrate to a temperature at which the anti-drying liquid exhibits the Leidenfrost effect in its reaction with the surface of the substrate.

[0064] The first heater 116, the second heater 126, and the substrate heater 145 can be controlled independently. In one embodiment, the first heater 116 can be connected to a first power supply 117a via a first power line 117c. A first switch 117b that controls the operation of the first heater 116 can be installed in the first power line 117c. In one embodiment, the second heater 136 can be connected to a second power supply 127a via a second power line 127c. A second switch 127b that controls the operation of the second heater 126 can be installed in the second power line 127c. In one embodiment, the substrate heater 145 can be connected to a third power supply 147a via a third power line 147c. A third switch 147b that controls the operation of the substrate heater 145 can be installed in the third power line 147c. Although not shown, a temperature control device for independently controlling the temperature of the first heater 116, the second heater 126, and the substrate heater 145 can be provided.

[0065] Figure 2 and Figure 3 The states of a substrate processing apparatus according to a first embodiment of the present invention are sequentially shown, controlling the order in which processes are performed using the substrate processing apparatus. (Referring to...) Figure 2 and Figure 3 The method of performing the process by using a substrate processing apparatus according to the first embodiment will be described.

[0066] Reference Figure 2 Since the upper chamber 110 and the lower chamber 120 are spaced apart from each other, the process chambers 110 and 120 are opened, and a transfer robot (not shown) transports the substrate "W" into the interior of the opened process chambers 110 and 120, where a liquid film is formed on the patterned surface corresponding to the upper surface of the substrate "W" using an organic solvent "S". In one embodiment, the organic solvent "S" may be IPA. The transported substrate "W" is supported by a substrate support 130. Then, the first heater 116, the second heater 126, and the substrate heater 145 can be turned on to be heated. When the substrate heater 145 contacts the transported substrate "W", the substrate heater 145 heats the substrate heating member 140, such that the anti-drying liquid heats the substrate "W" to a temperature at which the anti-drying liquid instantaneously exhibits the Leidenfrost effect in its reaction with the substrate surface, i.e., above the transition boiling point of the anti-drying liquid. In one embodiment, when the organic solvent "S" is IPA, the substrate heating member 140 heats the substrate "W" to 110°C or higher. More preferably, the substrate heating member 140 heats the substrate to 120°C or higher. In one embodiment, the substrate heating member 140 heats the substrate "W" such that the temperature of the substrate "W" does not exceed 300°C, but the inventive concept is not limited thereto.

[0067] Reference Figure 3 When the substrate "W" is transported in, the process chambers 110 and 120 are closed while the upper chamber 110 and lower chamber 120 are coupled to each other. When the process chambers 110 and 120 are closed, the substrate heating member 140 instantaneously heats the substrate "W" while the substrate heating member 140 and the substrate "W" are in contact with each other.

[0068] Figure 4 and Figure 5 A cross-sectional view of a substrate processed according to an embodiment of the present invention is shown, and the process of processing the substrate in sequence is illustrated. See also: Figure 4 and Figure 5 This will describe the changes in the state of the substrate "W" and the organic solvent "S".

[0069] Reference Figure 4 ,like Figure 2 The state of the substrate "W" before the substrate heating member 140 comes into contact with each other. Figure 5 As shown Figure 3 The middle substrate “W” and the substrate heating member 140 are in contact with each other.

[0070] Due to such Figure 3In the state where the substrate "W" and the substrate heating member 140 are in contact with each other, when the substrate "W" is instantaneously heated, the IPA supplied as the organic solvent "S" evaporates instantaneously, thus exhibiting the Leidenfrost effect. Then, vapor is formed between the substrate "W" and the IPA. The vapor acts as an air layer and separates the substrate "W" and the IPA, and the separated IPA is removed together with the supplied supercritical fluid.

[0071] According to the embodiments of the present invention, since the temperature of the IPA remaining on the substrate "W" can be raised in a short time, the time period for reaching the supercritical single phase of CO2 and IPA can be shortened, thereby increasing the UPEH. Furthermore, since the substrate "W" and IPA can be separated, the learning phenomenon of the pattern "P" can be improved, and thus, the substrate in which the pattern "P" with a higher aspect ratio is formed can be dried. In other words, because a thin vapor film (gas film) is generated between the liquid IPA and the substrate "W" due to the Leidenfrost effect, the liquid IPA is removed without the solid substrate "W" and the liquid IPA coming into contact with each other, thereby helping to prevent the learning phenomenon of the pattern "P".

[0072] Furthermore, as in the embodiments of the present invention, when the substrate "W" is introduced into process chambers 110 and 120 to increase the temperature of the IPA liquid film by means of the substrate heating member 140, when the substrate "W" on which the liquid film of room temperature IPA is formed is moved to process chambers 110 and 120 for supercritical processing in the liquid processing chamber, no evaporation occurs, and after the substrate "W" is introduced into process chambers 110 and 120, process chambers 110 and 120 are transformed into a high-pressure state within a few seconds, and heat energy is transferred to the IPA under the condition that the IPA liquid cannot evaporate, so that the IPA can quickly reach the supercritical phase, thereby effectively reducing UPEH.

[0073] Figure 6 A graph illustrating the pressure changes in the processing space during the process performed by the substrate processing apparatus is shown. (Refer to...) Figure 6After process chambers 110 and 120 are closed, a pressurization operation "I" is performed to gradually increase the internal pressure of process chambers 110 and 120 from a base pressure P0 (e.g., atmospheric pressure) to a process pressure P1 by supplying supercritical fluid to process spaces 102 and 104. The process pressure P1 is a pressure higher than the supercritical pressure Pcr of the supplied process fluid (e.g., carbon dioxide). When the internal pressure of process chambers 110 and 120 reaches the process pressure P1, a displacement operation (i.e., drive operation II) to remove the liquid phase of the mixed organic solvent "S" is performed, followed by a discharge operation III to depressurize the pressure inside the process spaces back to atmospheric pressure. During pressurization operation "I," before the process fluid reaches the supercritical pressure Pcr, an operation to induce the Leidenfrost effect is effectively performed by instantaneously heating the substrate "W" in section IA, provided the substrate "W" is in contact with the substrate heating member 140.

[0074] Figure 7 A view of a substrate processing apparatus 20 according to a second embodiment of the present invention is shown for illustrative purposes. Components of the substrate processing apparatus 20 and substrate processing unit 2000 according to the second embodiment that are different from those of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment will be described, and components of the substrate processing apparatus 20 and substrate processing unit 2000 according to the second embodiment that are the same as or similar to those of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment will be replaced by the description of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment.

[0075] Reference Figure 7 The substrate heater 2147 is embedded inside the substrate heating member 140. The embedded substrate heater 2147 can enhance the heating effect of the substrate "W" by directly heating the substrate heating member 140. Then, the third power line 147c can be connected to the substrate heater 2147 inside the substrate heating member 140 via the support rod 142. The operation of processing the substrate "W" using the substrate processing apparatus 2000 according to the second embodiment is the same as or similar to the operation of processing the substrate "W" using the substrate processing apparatus 10 using the substrate processing unit 1000 according to the first embodiment, therefore, its description will be omitted.

[0076] Figures 8 to 13The substrate processing apparatus according to a third embodiment of the present invention and the operation of processing a substrate using the substrate processing apparatus are illustrated schematically in sequence. Components of the substrate processing apparatus 30 and substrate processing unit 3000 according to the third embodiment that are different from those of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment will be described, and components of the substrate processing apparatus 30 and substrate processing unit 3000 according to the third embodiment that are the same as or similar to those of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment will be replaced by the description of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment.

[0077] The substrate processing apparatus 30 includes a substrate processing unit 3000. The substrate processing unit 3000 includes an upper chamber 3110 and a lower chamber 3120. The upper chamber 3110 may include an upper wall and a first side wall. The upper wall of the upper chamber 3110 may serve as the upper wall of a process chamber. The first side wall of the upper chamber 3110 may serve as part of the side wall of the process chamber. The lower chamber 3120 may include a lower wall. The lower wall of the lower chamber 3120 is a substrate support 3130 and also serves as a substrate heating member 3140.

[0078] Because the upper chamber 3110 and the lower chamber 3120 move relative to each other via the drive mechanism 3160, the upper and lower chambers can engage with each other, allowing the switching between a closed position for closing the process chambers 3110 and 3120 and an open position for opening the process chambers 3110 and 3120. For example, at least one of the upper chamber 3110 and the lower chamber 3120 can move up and down along the lifting rod 3162 to couple or separate from each other. In the open position of the process chambers 3110 and 3120, a substrate can be loaded or unloaded. In the closed position of the process chambers 3110 and 3120, a supercritical drying process for the substrate can be performed.

[0079] When the substrate "W" is loaded into process chambers 3110 and 3120, the substrate support 3130 can support the substrate "W". The substrate support 3130 can support the substrate when it is in the open position of process chambers 3110 and 3120, when it is being loaded into and unloaded from process chambers 3110 and 3120. Furthermore, the substrate support 3130 can support the substrate when it is being processed in process chambers 3110 and 3120.

[0080] The substrate support 3130 may be provided in a form that protrudes from the lower wall of the lower cavity 3120. However, this is only one embodiment, and the substrate support 3130 may be provided as a separate configuration from the lower cavity 3120, but coupled to the lower cavity 3120.

[0081] The substrate support 3130 includes a lifting pin 3135. The lifting pin 3135 is provided to be lifted. The lifting pin 3135 lifts the substrate "W" from the substrate support 3130 so that the substrate support 3130 and the substrate "W" are in contact with or spaced apart from each other. The lifting pin 3135 is raised when a transfer robot (not shown) enters the process chambers 3110 and 3120 to transport the substrate "W" into the process chambers 3110 and 3120. In addition, the lifting pin 3135 is lowered when the substrate "W" is loaded onto the substrate support 3130.

[0082] The substrate support 3130 can be used as a substrate heating member 3140. A substrate heater 3145 is embedded in the substrate support 3130, such that the substrate support 3130 functions as the substrate heating member 3140. The substrate heating member 3140 is lowered by a lifting pin 3135 to directly heat the substrate "W" in contact with the substrate support 3130. The substrate heating member 3140 has a region corresponding to the entire surface of the substrate. Preferably, when viewed from above, the substrate heating member 3140 has a circular shape. In a third embodiment, the diameter of the substrate support 3130, which serves as the substrate heating member 3140, can be larger than the diameter of the substrate "W". A liquid film is formed on the patterned surface of the substrate "W" with an anti-drying liquid, the substrate "W" is transported to the substrate processing unit 3000 and processed, the patterned surface of the substrate "W" corresponding to the upper surface of the substrate "W", and the substrate heating member 3140 heats the substrate "W" to a temperature at which the anti-drying liquid exhibits the Leidenfrost effect in its reaction with the surface of the substrate "W".

[0083] The first supply port 3122 can be installed in the lower chamber 3120. The first supply port 3122 can be installed on the lower wall of the lower chamber 3120. More specifically, the first supply port 3122 can be provided to avoid providing the substrate support 3130 in the lower chamber 3120. Process fluid can be supplied through the first supply port 3122 to the process area 3102 located below the substrate "W".

[0084] The second supply port 3112 can be installed in the upper chamber 3110. The second supply port 3112 can be installed in the central region of the upper wall of the upper chamber 3110. Processing fluid can be supplied to the process area 3102 located on the substrate "W" through the second supply port 3112.

[0085] Discharge port 3124 can be installed in the lower chamber 3120. Discharge port 3124 can be installed on the lower wall of the lower chamber 3120. More specifically, discharge port 3124 can be provided to avoid the location of substrate support 3130 in the lower chamber 3120. The first supply port 3122 and discharge port 3124 can be arranged in opposite directions relative to substrate support 3130. Discharge port 3124 can discharge the fluid used in the supercritical fluid process from the processing space of the process chamber. Chemicals can be dissolved in the discharged processing fluid. The processing fluid discharged from discharge port 3124 can be drained or supplied to a recycling unit (not shown) and separated into supercritical fluid and organic solvent.

[0086] The substrate processing unit 3000 may include a heater disposed in at least one of the upper wall and side wall of the upper chamber 3110 and the lower wall of the lower chamber 3120. The heater can heat the interior of the process chamber such that the processing fluid supplied to the interior of the process chamber is maintained above a threshold. For example, the heater may include a first heater 3116 disposed in the upper chamber 3110 and may include a second heater 3126 disposed in the lower chamber 3120.

[0087] Reference Figure 8 A transfer robot (not shown) enters process chambers 3110 and 3120 with the lifting pin 3135 raised to transport substrate "W" and form a liquid film on substrate "W" using organic solvent "S". Figure 8 The diagram shows the state in which the substrate "W" is transported in.

[0088] Reference Figure 9 The lifting pin 3136 lowers, causing the substrate "W" and the substrate heating member 3140 to come into contact with each other. (Refer to...) Figure 10 Process chambers 3110 and 3120 are in the closed position. Figure 9 The operations shown and Figure 10 The operation shown can be modified. Since the substrate "W" and the substrate heating member 3140 are in contact with each other, when the substrate "W" is heated instantaneously, the IPA provided as the organic solvent "S" evaporates instantaneously, thus exhibiting the Leidenfrost effect.

[0089] Reference Figure 11 Supercritical fluid is supplied from the first supply port 3122 to the process zone 3102 by opening valve 332. When the process zone 3102 is at a specific pressure, such as... Figure 12 As shown, supercritical fluid is supplied through the second supply port 3112 to process the substrate "W" by opening valve 330.

[0090] When the substrate "W" is fully processed, such as Figure 14As shown, the internal atmosphere of the process area 3102 is discharged by opening the discharge valve 410 of the discharge pipeline L2.

[0091] Figure 14 A view of a substrate processing apparatus according to a fourth embodiment of the present invention is shown for illustrative purposes. Components of the substrate processing apparatus 40 and substrate processing unit 4000 according to the fourth embodiment that are different from those of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment will be described, and components of the substrate processing apparatus 40 and substrate processing unit 4000 according to the fourth embodiment that are the same as or similar to those of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment will be replaced by the description of the substrate processing apparatus 10 and substrate processing unit 1000 according to the first embodiment. The substrate heating member 140 of the substrate processing unit 4000 is coupled by a lifting rod 4142. The lifting rod 4142 is coupled to a lifting plate 4141, and the lifting plate 4141 is coupled to a driver 4419 to be lifted. The substrate heater 2147 of the substrate heating member 140 heats the supported substrate "W" by heating the substrate heating member 140.

[0092] Figure 15 A flowchart illustrating a method for processing a substrate according to an embodiment using a substrate processing apparatus according to a fourth embodiment of the present invention is provided. (Refer to...) Figure 15 The process chambers 110 and 120 are opened (S110), and the substrate "W" is transported in (S120). After the substrate "W" is transported in, the process chambers 110 and 120 are closed (S130). Furthermore, supercritical fluid is started to be injected into the process chambers 110 and 120 through the first supply port 122 or the second supply port 112 (S140). Before the internal pressure of the process chambers 110 and 120 reaches the supercritical pressure of the processing fluid, the organic solvent "S" is brought into contact with the substrate heating member 140 to induce the Leidenfrost effect (S150). Furthermore, when the internal pressure of the process chambers 110 and 120 reaches the process pressure due to the continuous injection of supercritical fluid, a process of processing the substrate using supercritical fluid is executed. After this process, the supercritical fluid is discharged (S160). When the supercritical fluid is discharged and the internal pressure of process chambers 110 and 120 becomes atmospheric pressure, process chambers 110 and 120 are opened (S170) and the substrate “W” is transported out (S180).

[0093] Figure 16 A flowchart illustrating a method for processing a substrate according to another embodiment using a substrate processing apparatus according to a fourth embodiment of the present invention is provided. (Refer to...) Figure 16The process chambers 110 and 120 are opened (S210), and the substrate "W" is transported in (S220). After the substrate "W" is transported in, the process chambers 110 and 120 are closed (S230). Furthermore, by bringing the substrate heating member 140 in the process chambers 110 and 120 into contact with the substrate "W", the organic solvent "S" is subjected to the Leidenfrost effect (S240). Supercritical fluid is then injected into the process chambers 110 and 120 through the first supply port 122 or the second supply port 112 (S250). Furthermore, when the internal pressure of the process chambers 110 and 120 reaches the process pressure due to the continuous injection of supercritical fluid, a process of processing the substrate using supercritical fluid is executed. After this process, the supercritical fluid is discharged (S260). When the supercritical fluid is discharged and the internal pressure of process chambers 110 and 120 becomes atmospheric pressure, process chambers 110 and 120 are opened (S270) and the substrate “W” is transported out (S280).

[0094] According to various embodiments of the present invention, the substrate can be processed effectively.

[0095] According to various embodiments of the present invention, the tilting phenomenon during substrate drying can be further improved.

[0096] According to various embodiments of the present invention, the temperature of the anti-drying liquid can be increased more rapidly to reduce the time required for the substrate to reach the supercritical phase, and the throughput per hour per machine (UPEH) can be improved when the substrate is treated with supercritical fluid.

[0097] According to various embodiments of the present invention, when the substrate has a pattern with a high aspect ratio, the anti-drying liquid can be removed more effectively.

[0098] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned from the specification and drawings.

[0099] The above detailed description illustrates the inventive concept. Furthermore, the foregoing description presents exemplary embodiments of the inventive concept, and the inventive concept can be used in various other combinations, variations, and environments. That is, the inventive concept can be modified and altered without departing from the scope of the inventive concept disclosed in the specification, its equivalents in the written disclosure, and / or the technical or knowledge scope of those skilled in the art. The written embodiments describe the optimal state for realizing the technical spirit of the inventive concept, and various necessary changes can be made in the specific field of application and purpose of the inventive concept. Therefore, the detailed description of the inventive concept is not intended to limit the inventive concept to the disclosed embodiments. Furthermore, it should be understood that the appended claims include other embodiments.

Claims

1. An apparatus for processing a substrate by using a supercritical fluid, the apparatus comprising: a process chamber configured to provide a processing space and including a chamber heater configured to increase an internal temperature of the processing space; a substrate support provided in the processing space and configured to support the substrate; and a substrate heating member configured to heat a lower surface of the substrate with contacting the lower surface of the substrate, the substrate heating member heating the substrate to a temperature at which a Leidenfrost effect is exhibited when a dry-preventing liquid reacts with a surface of the substrate, the apparatus further comprising: a first supply port connected to a first supply line configured to supply a processing liquid to a portion of the processing space of the process chamber located at a lower portion of the substrate, wherein the substrate heating member is disposed between the first supply port and the substrate support, and blocks the supercritical fluid from being directly sprayed to the substrate from the first supply port. forming a liquid film on the substrate processed by using the supercritical fluid with the dry-preventing liquid.

2. The apparatus of claim 1, wherein, the substrate heating member heats the substrate to above a transition boiling point of the dry-preventing liquid.

3. The apparatus of claim 2, wherein, the substrate heating member heats the substrate to above 110℃.

4. The apparatus of claim 2, wherein, the chamber heater and the substrate heating member are independently controlled.

5. The apparatus of claim 1, wherein, the substrate heating member has an area corresponding to an entire surface of the substrate.

6. The apparatus of claim 1, wherein, the process chamber is formed by a combination of an upper chamber and a lower chamber, the lower chamber is coupled to the upper chamber according to upward / downward movement with respect to the upper chamber, and forms a sealed space by being coupled to the upper chamber, and 7. The apparatus of claim 1, wherein, wherein the substrate support is coupled to the upper chamber, and the substrate heating member is coupled to the lower chamber. a substrate heater is embedded inside the substrate heating member, and heats the substrate with heat generated by the substrate heating member.

8. The apparatus of claim 1, wherein, a substrate heater is provided inside the lower chamber, the substrate heater is configured to heat the substrate heating member, and 9. The apparatus of claim 7, wherein, wherein the substrate heating member receives heat generated by the substrate heater and heats the substrate. the lower chamber is formed of a stainless steel material.

10. The apparatus of claim 7, wherein, the lower chamber and the substrate heating member are connected to each other by a material having a set thermal conductivity or more.

11. The apparatus of claim 10, wherein, the substrate heating member is formed of a stainless steel material.

12. The apparatus of claim 1, wherein, 13.An apparatus for processing a substrate by using a supercritical fluid, the apparatus comprising: a process chamber configured to provide a processing space and including a chamber heater configured to increase an internal temperature of the processing space; a substrate support provided in the processing space and configured to support the substrate; and a lift pin configured to raise and lower the substrate from the substrate support such that the substrate support contacts the substrate, or such that the substrate support and the substrate are spaced apart from each other, and ​ ​ a substrate heating member configured to heat the substrate in contact with the substrate support, wherein the substrate heating member heats the substrate to a temperature at which the Leidenfrost effect is exhibited when a dry-preventing liquid reacts with a surface of the substrate, the apparatus further comprising: a first supply port connected to a first supply line configured to supply a processing liquid to a portion of the processing space of the process chamber located at a lower portion of the substrate, wherein the substrate heating member is disposed between the first supply port and the substrate support, and prevents the supercritical fluid from being directly sprayed from the first supply port to the substrate.

14. The apparatus of claim 13, wherein, forming a liquid film on the substrate processed by using the supercritical fluid with the dry-preventing liquid.

15. The apparatus of claim 13, wherein, the chamber heater and the substrate heating member are independently controlled.

16. The apparatus of claim 13, wherein, the substrate heating member is formed of a stainless steel material.

17. A method for processing a substrate by using a supercritical fluid with the apparatus according to any one of claims 1-16, the method comprising: transporting the substrate into an interior of a processing space, forming a liquid film on the substrate with a dry-preventing liquid; heating the substrate to a temperature at which the Leidenfrost effect is exhibited when the dry-preventing liquid reacts with a surface of the substrate; and supplying the supercritical fluid to the substrate and drying the supercritical fluid.

18. The method of claim 17, wherein, the heating of the substrate is performed when the interior of the processing space is below a supercritical pressure.

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