Display device
By introducing a color conversion component and a grid pattern sensor electrode into the display device, the problems of increased cost and visibility in the touch sensor attachment process are solved, thereby improving touch input functionality and luminous efficiency.
Patent Information
- Application Number
- CN202110569360.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-07-17
- Filing Date
- 2021-05-25
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2041-05-25
AI Technical Summary
In existing display devices, the attachment process of touch sensors increases costs, and the sensor electrodes are easily visible from the outside, affecting visibility, while there is room for improvement in luminous efficiency.
A color conversion section and a sensor electrode are introduced into the display device. The sensor electrode includes first and second conductive layers with a grid pattern, which are connected by a capping layer to realize touch input function and improve luminous efficiency through a light recycling mechanism.
While realizing the touch sensor function, it also improved the luminous efficiency of the display device, reduced the additional attachment process cost, and improved visibility.
Smart Images

Figure CN113948551B_ABST
Abstract
Description
[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0089068, filed on July 17, 2020, with the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. Technical Field
[0002] This disclosure relates to a display device. Background Technology
[0003] Recently, display devices that include touch sensors (which are input devices configured to receive touch input from users) have been widely used. Typically, touch sensors included in a display device are provided (manufactured) from outside the display device and then attached to it, or are located inside the display device.
[0004] However, when the touch sensor is pre-installed and attached to the display device, an additional attachment process is required, thus increasing manufacturing costs. Furthermore, the structures associated with the sensor electrodes are externally visible, resulting in reduced visibility. To compensate for this, improving visibility to the display device is expected when the touch sensor is included within the display device.
[0005] Furthermore, there is a continuous demand for improving the luminous efficiency of display devices, and therefore, research on increasing the luminous efficiency of display devices has been ongoing. Summary of the Invention
[0006] One or more embodiments of this disclosure relate to a display device configured to perform touch sensor functions and have improved luminous efficiency.
[0007] The purpose of this disclosure is not limited to the purposes described above, and other technical purposes not mentioned will be clearly understood by those skilled in the art from the following description.
[0008] According to embodiments of the present disclosure, a display device may be provided. The display device may include: a substrate; a display element portion comprising a plurality of display pixels on a surface of the substrate; a color conversion portion comprising a plurality of washers and a wavelength conversion pattern between the washers on the display element portion; and sensor electrodes configured to acquire touch input information. The sensor electrodes may include a first conductive layer disposed on at least a portion of the surfaces of the plurality of washers.
[0009] The sensor electrode may also include a plurality of first sensor patterns forming a first line along a first direction and a plurality of second sensor patterns forming a second line along a second direction different from the first direction.
[0010] The first sensor pattern in a plurality of first sensor patterns may be at least a portion of the first conductive layer, and the second sensor pattern in a plurality of second sensor patterns may be another portion of the first conductive layer.
[0011] The first conductive layer can be superimposed on at least one of the multiple dikes in the plan view.
[0012] The first conductive layer included in the sensor electrodes can be arranged in a grid pattern.
[0013] At least a portion of the first conductive layer can electrically connect adjacent first sensor patterns among a plurality of first sensor patterns.
[0014] The display device may include a light-emitting area and a non-light-emitting area, which may be separated from each other by at least one of a plurality of dikes, and a first conductive layer may be present in the non-light-emitting area.
[0015] At least a portion of the first conductive layer may be on the side surfaces of the plurality of dikes.
[0016] The display device may further include a second conductive layer, which is different from the first conductive layer.
[0017] The display device may further include a cover layer between the first conductive layer and the second conductive layer.
[0018] The first conductive layer and the second conductive layer can be electrically connected to each other through contact holes in the cover layer.
[0019] The second conductive layer can be located between the first conductive layer and the display element portion.
[0020] The second conductive layer can be superimposed on at least one of the multiple dikes in the plan view.
[0021] The first and second conductive layers may include metals.
[0022] At least a portion of the second conductive layer can electrically connect adjacent second sensor patterns among a plurality of second sensor patterns.
[0023] The first conductive layer and the second conductive layer can be stacked on top of each other in a planar diagram.
[0024] Wavelength conversion patterns may include at least one of quantum dots, quantum rods, and phosphors.
[0025] The display device may further include a filler layer between the first conductive layer and the display element portion.
[0026] The display device may also include a color filter portion, which includes a color filter to selectively transmit light having a specific wavelength.
[0027] The display pixels among the multiple display pixels can be at least one of organic light-emitting diodes, inorganic light-emitting diodes, and diodes. Display pixels include organic compounds and inorganic compounds.
[0028] The aspects (solutions) disclosed herein are not limited to those described above, and suitable aspects (solutions) not described will be clearly understood by those skilled in the art from this specification and the accompanying drawings.
[0029] According to embodiments of the present disclosure, a display device can be provided that performs touch sensor functions and has improved luminous efficiency by implementing a light recycling mechanism.
[0030] The effects of this disclosure are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the appropriate effects not described. Attached Figure Description
[0031] The above and other features of this disclosure will become more apparent from the accompanying drawings, which describe embodiments of the present disclosure in a further detailed manner:
[0032] Figure 1 This is a diagram illustrating a display device according to an embodiment;
[0033] Figure 2 This is a diagram illustrating a pixel driving circuit for a pixel included in a display device according to an embodiment;
[0034] Figure 3 This is a plan view showing one surface of the display device according to an embodiment;
[0035] Figure 4 It is along Figure 3 A sectional view taken by line I-I';
[0036] Figure 5 This is a diagram illustrating the construction of sensor electrodes included in a display device according to an embodiment;
[0037] Figure 6 yes Figure 5 A magnified view of region EA1;
[0038] Figures 7-9 It is along Figure 6 A sectional view taken from line II-II';
[0039] Figure 10 and Figure 11 It is along Figure 6 The sectional view taken by line III-III'; and
[0040] Figure 12This is a diagram illustrating a light recovery mechanism for light emitted from a display device according to an embodiment. Detailed Implementation
[0041] The present disclosure will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the disclosure are illustrated. However, it will be understood that the disclosure is not intended to be limited to the specific forms set forth herein, and the scope of the disclosure should be construed as including all changes, equivalents, modifications, or variations without departing from the spirit of the disclosure.
[0042] The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to limit the exemplary embodiments described herein.
[0043] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms (such as those defined in common dictionaries) shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field and shall not be interpreted in an idealized or overly formalized sense unless expressly defined herein.
[0044] The accompanying drawings are intended to describe this disclosure more fully. Because the relative dimensions of the elements, layers, regions, and shapes shown in the drawings may be exaggerated and / or simplified to aid in understanding this disclosure, this disclosure is not limited to the drawings.
[0045] In this specification, detailed descriptions of known constructions or functions related to this disclosure may be omitted where it is determined that such detailed descriptions would obscure the subject matter of this disclosure.
[0046] As used herein, unless the context clearly indicates otherwise, the singular forms “a (kind)” and “the (represented)” are also intended to include the plural forms.
[0047] It will also be understood that when the terms “comprising” and variations thereof, “including” and / or variations thereof are used in this specification, it indicates the presence of the stated features, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements, components and / or groups thereof.
[0048] When used herein, expressions such as “at least one of…”, “one of…”, and “selected from…” follow a list of elements, they modify the entire list of elements, not individual elements in the list.
[0049] As used herein, the term “and / or” includes any and all combinations of one or more of the relevant listed items.
[0050] Furthermore, when describing embodiments of this disclosure, the word "may" refers to "one or more embodiments of this disclosure".
[0051] It will be understood that when an element is referred to as being "on" another element or "connected" to another element, it can be directly on or directly connected to the other element, or there may be one or more intermediate elements. When an element is referred to as being "directly on" another element or "directly connected" to another element, there are no intermediate elements.
[0052] For ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” “bottom,” “top,” etc., may be used herein to describe the relationship of one element or feature to another (or other) element or feature as shown in the accompanying drawings. It will be understood that, in addition to the orientations depicted in the drawings, the spatial relative terms are intended to encompass different orientations of the device in use or operation. For example, if the device in the drawings is flipped, an element described as “below” or “under” other elements or features will subsequently be positioned “above” or “above” said other elements or features. Thus, the term “below” can encompass both above and below orientations. The device may be otherwise positioned (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein should be interpreted accordingly.
[0053] This disclosure relates to a display device, and more specifically, to a display device configured to receive touch input.
[0054] In the following text, refer to Figures 1 to 12 A display device according to embodiments of the present disclosure is described.
[0055] Figure 1 This is a diagram illustrating a display device according to an embodiment.
[0056] Display device 1 refers to a device configured to provide visual data to a user. For example, display device 1 may be a smartphone, tablet PC, large-screen device, mobile phone, video phone, e-book reader, desktop PC, laptop PC, netbook computer, workstation, server, personal digital assistant (PDA), portable multimedia player (PMP), MP3 player, medical device, camera, or wearable device, but this disclosure is not limited thereto.
[0057] Reference Figure 1 The display device 1 may include a substrate SUB, a plurality of pixels PXL including pixels PXL, drivers SDV, EDV and DDV, and line portions. The drivers SDV, EDV and DDV may include a scan driver SDV, a light emission driver EDV and a data driver DDV.
[0058] The base SUB can include the display area DA and the non-display area NDA.
[0059] Pixel PXL can be located on the substrate SUB. Pixel PXL can be located in the display area DA. In the display area DA, light can be emitted on the third direction DR3. Multiple pixels PXL can be arranged in a matrix according to rows extending along the first direction DR1 and columns extending along the second direction DR2.
[0060] Pixel PXL may include a light-emitting element that can emit light when an electrical signal is applied (e.g., see...). Figure 2 (Light emitting element LD).
[0061] At least one of the scan driver SDV, the light emission driver EDV, and the data driver DDV may be located in the non-display area NDA along with the line portion.
[0062] Depending on the purpose of the display device 1, the substrate SUB may comprise a rigid material and / or a flexible material. However, this disclosure is not limited thereto. For example, the material of the substrate SUB can be any suitable material.
[0063] In a plan view, the scan driver (SDV), light-emitting driver (EDV), and data driver (DDV) can be located in the non-display area (NDA). The scan driver (SDV), light-emitting driver (EDV), and data driver (DDV) can output electrical information to the pixel PXL. When electrical information is provided to the pixel PXL, the light-emitting element (LD) included in the pixel PXL can emit light.
[0064] The scan driver SDV can provide or transmit scan signals to the pixel PXL along or through the scan line.
[0065] The luminous driver EDV can provide luminous control signals to the pixel PXL along or through the luminous control line.
[0066] The data driver DDV can provide data signals to the pixel PXL along or through the data line.
[0067] The line portion can be located in the non-display area NDA in the plan view. The line portion can be connected (e.g., electrically connected) to any of the drivers SDV, EDV, and DDV and the pixel PXL.
[0068] Figure 2 This is a diagram illustrating a pixel driving circuit for a pixel included in a display device according to an embodiment.
[0069] Each pixel PXL included in the display device 1 according to embodiments of the present disclosure may include a pixel driving circuit PXC.
[0070] The pixel driving circuit PXC may include a first transistor T1 through a seventh transistor T7 (first transistor T1, second transistor T2, third transistor T3, fourth transistor T4, fifth transistor T5, sixth transistor T6, and seventh transistor T7) and a storage capacitor Cst. The pixel driving circuit PXC may be connected (e.g., electrically connected) to a light-emitting element LD.
[0071] The first electrode of the first transistor T1 can be connected via the fifth transistor T5 to the power line PL to which the first power supply (source) ELVDD is applied, and the second electrode of the first transistor T1 can be connected via the sixth transistor T6 to the anode electrode of the light-emitting element LD. The first transistor T1 can control the current data flowing through the light-emitting element LD from the first power supply ELVDD to the second power supply (source) ELVSS based on information about the voltage of the first node N1. The first transistor T1 can be a driving transistor.
[0072] The second transistor T2 can be connected between the first electrode of the first transistor T1 and the j-th data line Dj. The gate electrode of the second transistor T2 can be connected to the i-th scan line Si. When a scan signal is applied from the i-th scan line Si, the second transistor T2 can be turned on, and the j-th data line Dj and the first electrode of the first transistor T1 can be connected (e.g., electrically connected). The second transistor T2 can be a switching transistor.
[0073] The third transistor T3 can be connected between the second electrode of the first transistor T1 and the first node N1. When a scan signal with a gate turn-on voltage is applied from the i-th scan line Si, the third transistor T3 can be turned on, and the second electrode of the first transistor T1 and the first node N1 can be connected (e.g., electrically connected).
[0074] A fourth transistor T4 can be connected between the first node N1 and the initialization power line IPL, where initialization power (voltage) from the initialization power supply (source) Vint is applied to the initialization power line IPL. The gate electrode of the fourth transistor T4 can be connected to the (i-1)th scan line Si-1. When a scan signal is applied to the (i-1)th scan line Si-1, the fourth transistor T4 can be turned on to supply voltage from the initialization power supply Vint to the first node N1. The fourth transistor T4 can be an initialization transistor.
[0075] A fifth transistor T5 can be connected between a power line PL, to which a first power supply ELVDD is applied, and a first transistor T1. The gate electrode of the fifth transistor T5 can be connected to the i-th light-emitting control line Ei. When a light-emitting control signal with a gate cutoff voltage (e.g., a high-level voltage) is applied from the i-th light-emitting control line Ei, the fifth transistor T5 can be turned off, and under other conditions, it can be turned on. For example, when a low-level voltage is applied to the gate electrode of the fifth transistor T5, the fifth transistor T5 can be turned on.
[0076] A sixth transistor T6 can be connected between the first transistor T1 and the light-emitting element LD. The gate electrode of the sixth transistor T6 can be connected to the i-th light-emitting control line Ei. When a light-emitting control signal with a gate cutoff voltage (e.g., a high-level voltage) is applied from the i-th light-emitting control line Ei, the sixth transistor T6 can be turned off, and under other conditions it can be turned on. For example, when a low-level voltage is applied to the gate electrode of the sixth transistor T6, the sixth transistor T6 can be turned on.
[0077] A seventh transistor T7 can be connected between the initialization power line IPL and the anode electrode of the light-emitting element LD. The gate electrode of the seventh transistor T7 can be connected to the (i+1)th scan line Si+1. When a scan signal with a gate turn-on voltage (e.g., a low-level voltage) is applied from the (i+1)th scan line Si+1, the seventh transistor T7 can be turned on to supply voltage from the initialization power supply Vint to the anode electrode of the light-emitting element LD. Figure 2 In this embodiment, the gate electrode of the seventh transistor T7 is connected to the (i+1)th scan line Si+1, but this disclosure is not limited thereto. For example, the gate electrode of the seventh transistor T7 may be connected to the i-th scan line Si. In this case, the seventh transistor T7 is turned on by a scan signal of a gate turn-on voltage applied from the i-th scan line Si.
[0078] The voltage from the initial power supply Vint can be set to be lower than the voltage of the data signal. For example, the voltage from the initial power supply Vint can be set to be equal to or lower than the minimum voltage of the data signal.
[0079] The storage capacitor Cst can be connected between the power line PL, to which the first power supply ELVDD is applied, and the first node N1. The storage capacitor Cst can store information about the data signal and the voltage corresponding to the threshold voltage of the first transistor T1.
[0080] The anode of the light-emitting element LD can be connected to the first transistor T1 via the sixth transistor T6. The cathode of the light-emitting element LD can be connected to the second power supply ELVSS.
[0081] The light-emitting element LD can emit light with a set (e.g., predetermined) brightness corresponding to the amount of current supplied from the first transistor T1. The voltage value of the first power supply ELVDD can be set to be higher than the voltage value of the second power supply ELVSS, so that current flows to (through) the light-emitting element LD.
[0082] The light-emitting element (LD) can be constructed (i.e., formed) or comprise organic light-emitting diodes or inorganic light-emitting diodes (such as micro light-emitting diodes or quantum dot light-emitting diodes). Alternatively, the light-emitting element (LD) can be constructed from or comprise a combination of organic and inorganic materials.
[0083] exist Figure 2 In this embodiment, pixel PXL includes a single light-emitting element LD. However, this disclosure is not limited thereto. For example, in another embodiment, pixel PXL may include multiple light-emitting elements LD, and the light-emitting elements LD may be connected in series, in parallel, or in a series-parallel connection.
[0084] In addition, Figure 2 In this embodiment, the pixel PXL is driven by signals from the i-th scan line Si, the (i-1)-th scan line Si-1, and the (i+1)-th scan line Si+1, but this disclosure is not limited thereto. For example, the i-th scan line Si, the (i-1)-th scan line Si-1, and the (i+1)-th scan line Si+1 may be separate signal lines each supplied with scan signals from different scan drivers SDV.
[0085] In the following description, for convenience, the light-emitting element LD included in the display device 1 is described as an organic light-emitting diode, but the present disclosure is not limited thereto. For example, the light-emitting element LD can be of different types.
[0086] Figure 3 This is a plan view showing one surface of a display device according to an embodiment.
[0087] The display area DA can include the luminous area LA and the non-luminous area NLA.
[0088] The luminous region LA may include multiple luminous regions LA11 to LAij. These multiple luminous regions LA11 to LAij may be arranged in the form of an i*j matrix (where i and j are the natural numbers representing the rows and columns of the i*j matrix, respectively). In the following description, as exemplary luminous regions, a first luminous region LA11, a second luminous region LA12, and a third luminous region LA13 are given, where the first luminous region LA11 is the luminous region in the first row and first column, the second luminous region LA12 is the luminous region in the first row and second column, and the third luminous region LA13 is the luminous region in the first row and third column.
[0089] The non-emitting region (NLA) can be a region used to distinguish multiple emitting regions (LA11 to LAij) within the display area (DA). For example, the non-emitting region (NLA) can be defined as a region within the display area (DA) that does not emit light. The non-emitting region (NLA) can be arranged around the multiple emitting regions (LA11 to LAij).
[0090] Pixel PXL may include a first display pixel, a second display pixel, and a third display pixel. The first display pixel may correspond to a first light-emitting area LA11. The second display pixel may correspond to a second light-emitting area LA12. The third display pixel may correspond to a third light-emitting area LA13.
[0091] According to the example, the first display pixel can emit red light, and the red light can be output in the first emitting area LA11. The second display pixel can emit green light, and the green light can be output in the second emitting area LA12. The third display pixel can emit blue light, and the blue light can be output in the third emitting area LA13. However, this disclosure is not limited thereto.
[0092] For example, according to an embodiment, white light, or cyan, magenta, or yellow light, may be emitted in at least one of the plurality of light-emitting regions LA11 to LAij. Hereinafter, as an example, a case is described in which the light-emitting regions LA of the display device 1 include a first light-emitting region LA11, a second light-emitting region LA12, and a third light-emitting region LA13 that respectively emit red, green, and blue light. However, it is understood that the type and arrangement (e.g., configuration) of the colors of the first light-emitting region LA11, the second light-emitting region LA12, and the third light-emitting region LA13 are not limited thereto.
[0093] In the following description, the structure of the display device 1 is described with reference to a sectional view of a portion of the display device 1. However, for ease of description, the structure is based on... Figure 2 The transistor configuration corresponding to the sixth transistor T6 among the first transistor T1 to the seventh transistor T7 shown is described.
[0094] Figure 4 It is along Figure 3 A sectional view taken from line I-I'.
[0095] Reference Figure 4 The display device 1 may include a substrate SUB, a pixel circuit section PCL, a display element section DPL, a thin film encapsulation film TFE, a light control section LCP, and an upper substrate 514. The light control section LCP may include a color conversion section CCL and a color filter section CFL.
[0096] The substrate SUB may comprise rigid and / or flexible materials. For example, flexible materials may include at least one selected from polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. However, the materials used in the substrate SUB of embodiments of this disclosure are not limited thereto.
[0097] The pixel circuit section PCL may include a buffer film BFL, a gate insulating film GI, a first interlayer insulating film ILD1, multiple switching elements TR1, TR2 and TR3, a second interlayer insulating film ILD2, and multiple conductive lines CL1, CL2 and CL3. The pixel circuit section PCL may be located on a substrate SUB.
[0098] The buffer film (BFL) can be located on the substrate (SUB). The buffer film (BFL) prevents or substantially prevents impurities from diffusing from the outside. The buffer film (BFL) may include one or more insulating materials (such as silicon nitride (SiN)). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and / or alumina (AlO) x )).
[0099] Multiple switching elements, including a first switching element TR1, a second switching element TR2, and a third switching element TR3, can be disposed on the buffer film BFL. The multiple switching elements TR1, TR2, and TR3 can be thin-film transistors, and, according to the example, can be driving transistors of thin-film transistors. Each of the multiple switching elements TR1, TR2, and TR3 can correspond to the above reference. Figure 2 The sixth transistor T6 is described. For example, the first switching element TR1, the second switching element TR2, and the third switching element TR3 can be the sixth transistor T6 of the first display pixel corresponding to the first light-emitting area LA11, the sixth transistor T6 of the second display pixel corresponding to the second light-emitting area LA12, and the sixth transistor T6 of the third display pixel corresponding to the third light-emitting area LA13, respectively.
[0100] Each of the multiple switching elements TR1, TR2 and TR3 may include semiconductor layers (or semiconductor patterns) A1, A2 and A3, gate electrodes G1, G2 and G3, source electrodes S1, S2 and S3 and drain electrodes D1, D2 and D3.
[0101] For convenience, the description of the pixel circuit section PCL will be based on the construction of the first switching element TR1 in the following text. The construction of the first switching element TR1 described with reference to the pixel circuit section PCL can be applied to the corresponding components of each of the second switching element TR2 and the third switching element TR3, so redundant descriptions of the second switching element TR2 and the third switching element TR3 are not required.
[0102] Semiconductor layer A1 may be located on buffer film BFL. Semiconductor layer (pattern) A1 may include at least one of polycrystalline silicon, amorphous silicon, and oxide semiconductor.
[0103] The semiconductor layer A1 may include a first contact region that contacts the source electrode S1 and a second contact region that contacts the drain electrode D1.
[0104] The first contact region and the second contact region can be semiconductor patterns doped with impurities. The region between the first contact region and the second contact region can be a channel region. The channel region can be an intrinsic semiconductor pattern without impurities.
[0105] A gate insulating film GI can be disposed on the semiconductor layer A1. The gate insulating film GI can include an inorganic material. According to an example, the gate insulating film GI can include silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and aluminum oxide (AlO x At least one of the following. According to an embodiment, the gate insulating film GI may include an organic material.
[0106] The gate electrode G1 can be located on the gate insulating film GI. The position of the gate electrode G1 can correspond to the position of the channel region of the semiconductor layer A1. For example, the gate electrode G1 can be disposed on the channel region of the semiconductor layer A1 and the gate insulating film GI can be placed between the gate electrode G1 and the channel region of the semiconductor layer A1.
[0107] The first interlayer insulating film ILD1 can be located on the gate electrode G1. Similar to the gate insulating film GI, the first interlayer insulating film ILD1 may include silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and aluminum oxide (AlO xAt least one of the following.
[0108] The source electrode S1 and drain electrode D1 can be located on the first interlayer insulating film ILD1. The source electrode S1 can pass through the gate insulating film GI and the first interlayer insulating film ILD1 and contact the first contact region of the semiconductor layer A1. The drain electrode D1 can pass through the gate insulating film GI and the first interlayer insulating film ILD1 and contact the second contact region of the semiconductor layer A1.
[0109] The second interlayer insulating film ILD2 may be located on the source electrode S1 and the drain electrode D1. The second interlayer insulating film ILD2 may comprise an inorganic material similar to the first interlayer insulating film ILD1 and the gate insulating film GI. The inorganic material may include at least one of the materials exemplified as structural materials of the first interlayer insulating film ILD1 and / or the gate insulating film GI, for example, silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and / or alumina (AlO) x According to an embodiment, the second interlayer insulating film ILD2 may include organic materials.
[0110] The multiple conductive lines may include a first conductive line CL1, a second conductive line CL2, and a third conductive line CL3. Each of the multiple conductive lines CL1, CL2, and CL3 may be connected (e.g., electrically connected) to the drain electrodes D1, D2, and D3 respectively through corresponding contact holes passing through the second interlayer insulating film ILD2.
[0111] The multiple conductive lines CL1, CL2, and CL3 can all be paths through which electrical signals can flow. According to an example, the multiple conductive lines CL1, CL2, and CL3 may include at least one of molybdenum (Mo), tungsten (W), aluminum-neodymium (AlNd), titanium (Ti), aluminum (Al), and silver (Ag).
[0112] The display element portion (DPL) can be disposed on the pixel circuit portion (PCL). The display element portion (DPL) may include the pixel defining film (PDL) and the light-emitting element (LD).
[0113] A pixel-defining film (PDL) can be used to define the light-emitting region (LA) of each pixel (PXL). The PDL can include organic materials. According to examples, the PDL can include at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.
[0114] A light-emitting element (LD) may include a first electrode AE, a second electrode CE, and a light-emitting layer EML.
[0115] In one or more embodiments, one of the first electrode AE and the second electrode CE may be an anode electrode, and the other of the first electrode AE and the second electrode CE may be a cathode electrode. When the light-emitting element LD is a front-surface emitting type organic light-emitting diode, the first electrode AE may be a reflective electrode, and the second electrode CE may be a transmissive electrode. The following description, by way of example, depicts a case where the light-emitting element LD is a front-surface emitting type organic light-emitting diode, the first electrode AE is an anode electrode, and the second electrode CE is a cathode electrode. However, this disclosure is not limited thereto. For example, the light-emitting element LD may be a rear-surface emitting type organic light-emitting diode or a dual-surface emitting type organic light-emitting diode.
[0116] The first electrode AE can be located on the second interlayer insulating film ILD2. The first electrode AE can be connected (e.g., electrically connected) to the first conductive line CL1.
[0117] The first electrode AE may include a reflective film capable of reflecting light, or a transparent conductive film disposed on or below the reflective film. For example, the first electrode AE may be composed of or include multiple films, including a lower transparent conductive film formed of indium tin oxide (ITO), a reflective film disposed on the lower transparent conductive film and formed of silver (Ag), and an upper transparent conductive film disposed on the reflective film and formed of indium tin oxide (ITO).
[0118] The light-emitting layer EML can be disposed in the opening of the pixel-defining film PDL. The area exposed through the opening of the pixel-defining film PDL and / or the area in which the light-emitting layer EML is disposed can be the light-emitting regions LA11, LA12, and LA13 in which light is emitted. The light-emitting layer EML can include organic materials.
[0119] Specifically, the light-emitting layer (EML) can have a multilayer thin-film structure including at least a light-generating layer. The EML may include a hole injection layer for injecting one or more holes, a hole transport layer having hole transport properties (e.g., excellent hole transport properties) to increase the chance of recombination between holes and electrons by suppressing the movement of one or more electrons not bound in the light-generating layer, a light-generating layer that emits light through the recombination of injected electrons and holes, a hole blocking layer that suppresses the movement of one or more holes not bound in the light-generating layer, an electron transport layer that transports (e.g., smoothly transports) electrons to the light-generating layer, and an electron injection layer for injecting electrons. When an electrical signal is applied to the EML as described above, light can be emitted.
[0120] The second electrode CE can be disposed on the light-emitting layer EML. The second electrode CE can be disposed as a common electrode on the front surface of the substrate SUB, but this disclosure is not limited thereto. The second electrode CE can include a transparent conductive material (such as a transparent conductive oxide). The transparent conductive oxide can be at least one of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), gallium-doped zinc oxide (GZO), zinc tin oxide (ZTO), gallium tin oxide (GTO), indium gallium zinc oxide (IGZO), and fluorine-doped tin oxide (FTO). According to an embodiment, when the light-emitting element LD is a back-surface emitting type organic light-emitting diode, the second electrode CE can include a semi-transparent conductive material, such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag).
[0121] The color conversion section CCL may include a fill layer 510, a first metal portion MT1, a second metal portion MT2, a first capping layer 511, a second capping layer 512, a first dam BNK1, multiple wavelength conversion patterns 530 and 540, and a light-transmitting pattern 550. The multiple wavelength conversion patterns 530 and 540 may include a first wavelength conversion pattern 530 and a second wavelength conversion pattern 540.
[0122] The filler layer 510 may be located between the first capping layer 511 and the thin-film encapsulation film TFE (e.g., between the first capping layer 511 and the thin-film encapsulation film TFE on the third-direction DR3). The filler layer 510 may be located between the display element portion DPL and the color filter portion CFL (e.g., between the display element portion DPL and the color filter portion CFL on the third-direction DR3). The filler layer 510 may include epoxy resin, polyurethane acrylate, epoxy acrylate and / or silicone (e.g., bisphenol A type epoxy resin, alicyclic epoxy resin, phenyl silicone resin, rubber, acrylic epoxy resin, aliphatic polyurethane acrylate, etc.). Alternatively, the filler layer 510 may include a material selected from the group consisting of hexamethyldisiloxane, octamethyltrisiloxane, decamethyltetrasiloxane, dodecylpentasiloxane, polydimethylsiloxane and combinations thereof. However, the materials included in the filler layer 510 are not limited to the examples described above, and various suitable filler materials may be applied.
[0123] The second metal portion MT2 may be located between the first capping layer 511 and the filler layer 510. The second metal portion MT2 may be disposed on one surface of the first capping layer 511. According to an example, the second metal portion MT2 may be located on the surface of the first capping layer 511 that contacts the filler layer 510.
[0124] In the plan view, the second metal portion MT2 can be stacked with the first embankment BNK1. In other words, the second metal portion MT2 can be stacked with the first embankment BNK1 on the third direction DR3. For example, multiple second metal portions MT2 can be provided, and at least one of the multiple second metal portions MT2 can be arranged on a surface of the first cover layer 511 corresponding to the position of the first embankment BNK1.
[0125] The second metal portion MT2 may include at least one of a metal, an alloy thereof, a conductive polymer, a conductive metal oxide, and a nanomaterial. For example, the second metal portion MT2 may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).
[0126] A first capping layer 511 may be located on the filler layer 510. The first capping layer 511 may protect the display element portion DPL from external influences. The first capping layer 511 may include at least one of inorganic and organic materials. According to an example, the first capping layer 511 may include at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride.
[0127] The first dam BNK1 can be located between the first capping layer 511 and the second capping layer 512 of the non-emitting region NLA. The emitting region LA and the non-emitting region NLA can be defined by the first dam BNK1 of the color conversion section CCL. For example, the area where the first dam BNK1 is provided can correspond to the non-emitting region NLA that does not emit light.
[0128] The first embankment BNK1 can define the positions of the first wavelength conversion pattern 530, the second wavelength conversion pattern 540, and the light-transmitting pattern 550. For example, the first wavelength conversion pattern 530 can be located in a region surrounded by the first embankment BNK1.
[0129] The first barrier BNK1 may comprise organic or inorganic materials. For example, the first barrier BNK1 may comprise materials with low light-blocking and / or reflective properties. Alternatively, the first barrier BNK1 may comprise light-blocking and / or reflective materials. For example, the first barrier BNK1 may comprise at least one of a photosensitive composition, an organic material, and a metallic material. The materials included in the first barrier BNK1 are not limited to the examples described above.
[0130] The first metal portion MT1 can be disposed on one surface of the first dam BNK1. For example, at least a portion of the first metal portion MT1 can be disposed on the upper surface of the first dam BNK1 facing the second metal portion MT2. That is, the first metal portion MT1 can be stacked on the upper surface of the first dam BNK1 with the second metal portion MT2 (e.g., stacked on the upper surface of the first dam BNK1 on a third-direction DR3). Furthermore, another portion of the first metal portion MT1 can be disposed on a side surface of the first dam BNK1. According to an embodiment, the first metal portion MT1 can directly cover one surface of the first dam BNK1.
[0131] The first metal portion MT1 can be located in the non-light-emitting region NLA. According to an embodiment, the light-emitting region LA and the non-light-emitting region NLA can be divided by a first dam BNK1, and in a plan view, the first metal portion MT1 formed on the first dam BNK1 can be disposed in the non-light-emitting region NLA. For example, the light-emitting regions LA11, LA12, and LA13 can be separated from each other by the first dam BNK1 in the non-light-emitting region NLA, and the first metal portion MT1 can be formed on the upper surface and side surface of the first dam BNK1 in the non-light-emitting region NLA.
[0132] The first metal portion MT1 may be disposed on at least a portion of the first embankment BNK1, and may be formed into a predetermined (e.g., pre-defined) pattern in a plan view. According to an example, the first metal portion MT1 may be disposed in a grid shape in a plan view.
[0133] Similar to the second metal portion MT2, the first metal portion MT1 may include a conductive material. The first metal portion MT1 may include at least one of a metal, an alloy thereof, a conductive polymer, a conductive metal oxide, and a nanomaterial. For example, the first metal portion MT1 may include at least one of the materials listed with reference to the second metal portion MT2.
[0134] In this specification, the first metal portion MT1 and the second metal portion MT2 may be referred to as the first conductive layer and the second conductive layer, respectively.
[0135] The first metal portion MT1 and the second metal portion MT2 can serve as paths for providing electrical signals for touch input applied from an external source. According to an embodiment, the first metal portion MT1 can be a conductive pattern configured to receive touch input information, and the second metal portion MT2 can be a bridging pattern connecting (e.g., electrically connecting) multiple first metal portions MT1. See later. Figures 5-7 The description includes the contents of the touch sensor, which includes the shape of the first metal part MT1 and the second metal part MT2, and therefore the content can be repeated without repetition.
[0136] In the planar view, the first wavelength conversion pattern 530 may be located in the first light-emitting region LA11. The first wavelength conversion pattern 530 may include a first wavelength conversion material 531, a first matrix resin 532, and a first scatterer 533.
[0137] The first wavelength conversion material 531 can convert the peak wavelength of the applied light. According to an example, the first wavelength conversion material 531 can convert blue light into red light with a wavelength of 610 nm to 650 nm.
[0138] The first wavelength conversion material 531 can be a quantum dot (QD), a quantum rod, or a phosphor.
[0139] In one or more embodiments, a quantum dot can refer to a particulate material that emits light of a specific wavelength when electrons move (e.g., descend) from the conduction band to the valence band. A quantum dot can be a semiconductor nanocrystal material. Quantum dots can have a specific band gap depending on their composition and size, and can emit light with a unique wavelength after absorbing light. Non-limiting examples of semiconductor nanocrystals containing quantum dots can include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, and / or combinations thereof.
[0140] The first matrix resin 532 may have high transmittance and excellent dispersion characteristics for the first wavelength conversion material 531. For example, the first matrix resin 532 may include organic materials such as epoxy resin, acrylic resin, cardo resin, or imide resin.
[0141] The first scatterer 533 may have a refractive index different from that of the first matrix resin 532, and may form an optical interface with the first matrix resin 532. The first scatterer 533 may be a light-scattering particle. According to an example, the first scatterer 533 may be a metal oxide particle or an organic particle.
[0142] In the planar view, the second wavelength conversion pattern 540 may be located in the second emitting region LA12. The second wavelength conversion pattern 540 may include a second wavelength conversion material 541, a second matrix resin 542, and a second scatterer 543.
[0143] The second wavelength conversion material 541 can convert the peak wavelength of the applied light. According to an example, the second wavelength conversion material 541 can convert blue light into green light with a wavelength of 510 nm to 550 nm.
[0144] The second wavelength conversion material 541 can be a quantum dot, a quantum rod, or a phosphor.
[0145] The second matrix resin 542 may have high transmittance and excellent dispersion characteristics for the second wavelength conversion material 541. For example, similar to the first matrix resin 532, the second matrix resin 542 may include organic materials such as epoxy resin, acrylic resin, cardo resin, or imide resin.
[0146] The second scatterer 543 may have a refractive index different from that of the second matrix resin 542, and may form an optical interface with the second matrix resin 542. The second scatterer 543 may be a light scattering particle.
[0147] In the plan view, the light-transmitting pattern 550 can be located in the third light-emitting region LA13. The light-transmitting pattern 550 may include a third matrix resin 552 and a third diffuser 553.
[0148] The third matrix resin 552 can have high transmittance and excellent dispersion characteristics for the third diffuser 553. For example, similar to the first matrix resin 532, the third matrix resin 552 can include organic materials such as epoxy resin, acrylic resin, cardo resin or imide resin.
[0149] The third scatterer 553 may have a refractive index (refractive index) different from that of the third matrix resin 552, and may form an optical interface with the third matrix resin 552. According to an example, the third scatterer 553 may be a light-scattering particle.
[0150] The second capping layer 512, together with the first capping layer 511, seals the first wavelength conversion pattern 530, the second wavelength conversion pattern 540, and the light-transmitting pattern 550. Therefore, the second capping layer 512 can prevent or substantially prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the first wavelength conversion pattern 530, the second wavelength conversion pattern 540, and / or the light-transmitting pattern 550. Similar to the first capping layer 511, the second capping layer 512 may include at least one of inorganic and organic materials, and may include at least one of the materials mentioned in the description of the first capping layer 511.
[0151] The color filter section CFL may include a black matrix 521, color filters in a plurality of color filters 560, and a third capping layer 513. The plurality of color filters 560 may include a first color filter 561, a second color filter 562, and a third color filter 563.
[0152] The black matrix 521 may be located on the second capping layer 512. The black matrix 521 may be positioned along the boundary of each of the light-emitting regions LA11, LA12, and LA13, and may block light transmission. The black matrix 521 may include light-blocking materials and / or reflective materials.
[0153] Each of the multiple color filters 560 selectively transmits light of a specific wavelength and can absorb light of a different wavelength. Light passing through the multiple color filters 560 can display one of the three primary colors, such as red, green, and blue. However, the displayed color of light passing through the multiple color filters 560 is not limited to primary colors. For example, the displayed color of light passing through the multiple color filters 560 can be any of cyan, magenta, yellow, and white.
[0154] A first color filter 561 may be disposed in a first light-emitting region LA11. The first color filter 561 may transmit light of a first color and may absorb light of a second color and a third color. The first color filter 561 may include a colorant associated with the first color.
[0155] A second color filter 562 may be disposed in the second light-emitting region LA12. The second color filter 562 can transmit light of a second color and can absorb light of a first color and a third color. The second color filter 562 may include a colorant associated with the second color.
[0156] A third color filter 563 may be disposed in a third light-emitting region LA13. The third color filter 563 may transmit light of a third color and may absorb light of the first color and the second color. The third color filter 563 may include a colorant associated with the third color.
[0157] The third capping layer 513 may be located on multiple color filters 560 and / or black matrix 521.
[0158] The third capping layer 513 can protect the color filter portion CFL from external influences. Similar to the first capping layer 511, the third capping layer 513 can include at least one of inorganic and organic materials. The third capping layer 513 can be disposed on the plurality of color filters 560 and black matrix 521 to be planarized (e.g., providing a flat or substantially flat surface).
[0159] The upper substrate 514 may be disposed on the third cover layer 513. The upper substrate 514 may include a material with light transmittance. The upper substrate 514 may be a rigid substrate or a flexible substrate. According to an example, the upper substrate 514 may be a window member or an encapsulation substrate. According to an embodiment, the upper substrate 514 may not be included in the display device 1.
[0160] The sensor electrodes included in the display device 1 are described in more detail below.
[0161] Figure 5 This is a diagram illustrating the construction of sensor electrodes included in a display device according to an embodiment.
[0162] Display device 1 can acquire information about the applied touch input. Display device 1 can acquire electrical information about the touch input provided by the user. According to an example, display device 1 can sense touch, hovering, gestures, proximity, etc., of a user's body part (e.g., a finger).
[0163] The sensor electrode SE can be implemented as at least one of resistive type (type or construction), capacitive type, electromagnetic type, and optical type. When the sensor electrode SE is implemented as capacitive type, the sensor electrode SE can be constructed as self-capacitance type or mutual capacitance type.
[0164] Display device 1 may include a sensing area SA, a non-sensing area NSA, and a pad (also known as a solder pad or solder pad) area PDA.
[0165] At least a portion of the sensing area SA can be referenced above. Figure 1 The described display area DA is superimposed (e.g., in the thickness direction of display device 1 and referenced above). Figure 1 The described display area DA is overlaid. Sensor electrodes SE, configured to receive touch input, can be located in the sensing area SA.
[0166] At least a portion of the non-sensing area NSA can be referenced above. Figure 1 The non-display area NDA is described as overlaid. In one or more embodiments, a sensing line SL may be located within the non-sensing area NSA. The sensing line SL may be connected (e.g., electrically connected) to a sensor electrode SE and may transmit information about or related to touch input. The sensing line SL may include a first sensing line SL1 and a second sensing line SL2. In one or more embodiments, the sensing line SL may include at least two sensing lines.
[0167] A pad region PDA, including a pad PD connected (e.g., an electrical connection) to the sensing line SL, can be disposed on at least a portion of the non-sensing region NSA. Multiple pad PDs can be disposed.
[0168] The sensor electrode SE may include a first metal portion MT1. The sensor electrode SE may refer to an electrode configuration within a unit pattern region implemented by the first metal portion MT1. That is, the first metal portion MT1 may be arranged in the unit pattern region such that the first sensor pattern SP1 has a set (e.g., predetermined) shape. According to an example, the unit pattern region may be rhomboid in shape. However, this disclosure is not limited to a specific shape. For example, the unit pattern region may be any suitable shape.
[0169] The sensor electrode SE may include a first sensor pattern SP1 and a second sensor pattern SP2. The display device 1 can obtain information about the user's touch input based on information about the capacitance change formed between the first sensor pattern SP1 and the second sensor pattern SP2. That is, the first sensor pattern SP1 and the second sensor pattern SP2 may refer to an electrode structure implemented by connecting a plurality of first metal portions MT1 to each other or combining a plurality of first metal portions MT1 to each other.
[0170] Multiple first sensor patterns SP1 can form a first line connected (e.g., electrically connected) to a corresponding one of multiple first sensing lines SL1. According to an example, the first sensor patterns SP1 can form sensing rows along a first direction DR1. That is, multiple first sensor patterns SP1 can be disposed in a sensing area SA, and first sensor patterns SP1 adjacent to each other in the first direction DR1 can be physically separated from each other, but can be connected (e.g., electrically connected).
[0171] For example, first sensor patterns SP1 adjacent to each other in the first direction DR1 can be connected (e.g., electrically connected) by a second bridging pattern BP2. In one or more embodiments, the second bridging pattern BP2 may be substantially the same as the second metal portion MT2 (e.g., substantially the same as the second metal portion MT2 in terms of material). That is, the second bridging pattern BP2 may be implemented based on the second metal portion MT2, and the first sensor patterns SP1 adjacent to each other in the first direction DR1 may be connected (e.g., electrically connected) to each other without being electrically connected through the first bridging pattern BP1. In other words, in one or more embodiments, the first bridging pattern BP1 may not be connected (e.g., not electrically connected) to the first sensor patterns SP1 adjacent to each other in the first direction DR1.
[0172] The first sensor pattern SP1 can be arranged in a unit pattern area having a set (e.g., predetermined) shape. According to an example, the first sensor pattern SP1 can be arranged in a rhomboid-shaped unit pattern area. However, this disclosure is not limited to a specific shape.
[0173] The first sensor pattern SP1 may have a grid pattern having a plurality of first grid holes MH1 (e.g., see...). Figure 6 In the first sensor pattern SP1, the first metal portion MT1 that constitutes the first sensor pattern SP1 can be set in a grid pattern and can generally form a conductive pattern with a set (e.g., predetermined) shape.
[0174] Multiple second sensor patterns SP2 can form a second line connected (e.g., electrically connected) to a corresponding one of multiple second sensing lines SL2. According to an example, the second sensor patterns SP2 can form a sensing column line along a second direction DR2. That is, multiple second sensor patterns SP2 can be disposed in a sensing area SA, and second sensor patterns SP2 adjacent to each other in the second direction DR2 can be physically separated from each other, but can be connected (e.g., electrically connected).
[0175] In one or more embodiments, second sensor patterns SP2 adjacent to each other on the second direction DR2 can be connected (e.g., electrically connected) by a first bridging pattern BP1. In one or more embodiments, the first bridging pattern BP1 can also be formed by a first metal portion MT1 similar to the first sensor pattern SP1 and the second sensor pattern SP2. That is, the second sensor patterns SP2 adjacent to each other can be connected (e.g., electrically connected) to each other without being electrically connected through the second metal portion MT2.
[0176] The second sensor pattern SP2 can be arranged in a unit pattern area having a set (e.g., predetermined) shape. According to an example, the second sensor pattern SP2 can be arranged in a rhomboid-shaped unit pattern area. However, this disclosure is not limited thereto.
[0177] In one or more embodiments, the second sensor pattern SP2 may have a grid pattern having a plurality of second grid holes MH2 (e.g., see...). Figure 6 In the second sensor pattern SP2, the first metal portion MT1 can be set in a grid pattern and can generally form a conductive pattern with a set (e.g., predetermined) shape.
[0178] The first sensor pattern SP1 can be connected (e.g., electrically connected) to the first sensing line SL1 and the pad PD. The second sensor pattern SP2 can be connected (e.g., electrically connected) to the second sensing line SL2 and the pad PD. The first sensor pattern SP1 and the second sensor pattern SP2 can be located at the same height, but this disclosure is not limited thereto.
[0179] The first sensing line SL1 may be connected (e.g., electrically connected) to the first sensor pattern SP1. Any one of the first sensing lines SL1 may be connected (e.g., electrically connected) to a sensor row formed by a plurality of first sensor patterns SP1 arranged along the first direction DR1. In a plan view, the first sensing line SL1 may be bent (e.g., bent in the non-sensing region NSA along the first direction DR1) at least once. The first sensing line SL1 may include a portion extending along the second direction DR2.
[0180] The second sensing line SL2 may be connected (e.g., electrically connected) to the second sensor pattern SP2. Any one of the second sensing lines SL2 may be connected (e.g., electrically connected) to a sensor array formed by a plurality of second sensor patterns SP2 arranged along the second direction DR2. In a plan view, the second sensing line SL2 may be bent at least once in the non-sensing region NSA. The second sensing line SL2 may include a portion extending along the first direction DR1.
[0181] See below, or later. Figure 6 The detailed structure and electrical connections between the first sensor pattern SP1 and the second sensor pattern SP2 are described.
[0182] Figure 6 yes Figure 5 A magnified view of region EA1.
[0183] As described above, the first sensor pattern SP1 and the second sensor pattern SP2 can be arranged in a grid shape. Figure 6 In the diagram, the structures other than the first sensor pattern SP1 and the second sensor pattern SP2 are omitted.
[0184] The formation of the first metal portion MT1 involves at least a portion of the first sensor pattern SP1 forming a first line along a first direction DR1, and another portion of the first metal portion MT1 forming a second line along a second direction DR2. In one or more embodiments, the first line and the second line may at least partially intersect each other, and the first mesh hole MH1 may be provided in a plan view.
[0185] The formation of the first metal portion MT1 involves at least a portion of the second sensor pattern SP2 forming a third line along the first direction DR1, and another portion of the formation of the first metal portion MT1 involving the second sensor pattern SP2 forming a fourth line along the second direction DR2. In one or more embodiments, the third and fourth lines may at least partially intersect each other, and the second mesh hole MH2 may be provided in a plan view.
[0186] According to the embodiments, the first metal portion MT1 for constructing the first sensor pattern SP1 and the first metal portion MT1 for constructing the second sensor pattern SP2 may not have mesh holes, but this disclosure is not limited thereto.
[0187] The first bridging pattern BP1 can connect (e.g., electrically) to adjacent second sensor patterns SP2. The first bridging pattern BP1, as a configuration corresponding to the first metal portion MT1, can be arranged on the first embankment BNK1. That is, the second sensor pattern SP2 and the first bridging pattern BP1 can be arranged at the same height.
[0188] The second bridging pattern BP2 can connect (e.g., electrically connect) adjacent first sensor patterns SP1. That is, the second metal portion MT2 can physically and electrically connect adjacent first sensor patterns SP1 in the first direction DR1. (Refer to the above...) Figure 4 As described, the second metal portion MT2 can be a metal pattern not arranged on the first embankment BNK1. That is, the first metal portion MT1 and the second metal portion MT2 can be arranged on different layers.
[0189] In one or more embodiments, the first sensor pattern SP1 and the second sensor pattern SP2 may be arranged at the same height. However, according to an embodiment, the height of the first embankment BNK1 where the second sensor pattern SP2 is located and the height of the first embankment BNK1 where the first sensor pattern SP1 is located may be different from each other, so the first sensor pattern SP1 and the second sensor pattern SP2 may be arranged at different heights. Alternatively, the thickness of the first sensor pattern SP1 and the thickness of the second sensor pattern SP2 in the first metal portion MT1 may be different from each other, so the first sensor pattern SP1 and the second sensor pattern SP2 may be arranged on different layers.
[0190] In addition, such as Figure 6 As shown in the embodiments, a first bridging pattern BP1 is connected (e.g., electrically connected) between second sensor patterns SP2 formed along the second direction DR2, and a second bridging pattern BP2 (i.e., the second metal portion MT2) is connected (e.g., electrically connected) between first sensor patterns SP1 formed along the first direction DR1. However, this disclosure is not limited thereto. For example, according to one or more embodiments, the first bridging pattern BP1 may be connected (e.g., electrically connected) between first sensor patterns SP1 formed along the first direction DR1, and the second bridging pattern BP2 may be connected (e.g., electrically connected) between second sensor patterns SP2 formed along the second direction DR2.
[0191] See below, or later. Figures 7-11 The detailed structure of the sensing electrodes according to the embodiment is described. For ease of description, the specific structures and repetitive content of the pixel circuit portion PCL and the display element portion DPL are not repeated, and some structures of the display device 1 including the first metal portion MT1 and the second metal portion MT2 are described in more detail.
[0192] Figures 7-9 It is along Figure 6 The sectional view taken from line II-II'.
[0193] Figure 10 and Figure 11It is along Figure 6 The sectional view taken from line III-III'.
[0194] According to an embodiment, the second metal portion MT2 may be located below or above the first metal portion MT1 based on the substrate surface (e.g., substrate SUB).
[0195] Figure 7 and Figure 10 A diagram may schematically show a display device 1 having a structure in which the second metal portion MT2 is located below the first metal portion MT1.
[0196] Reference Figure 7 and Figure 10 The second metal part MT2 can be located between the first metal part MT1 and the display element part DPL.
[0197] The second metal portion MT2 may connect (e.g., electrically connect) to the first sensor pattern SP1 that is adjacent to each other, the first sensor pattern SP1 being constructed of or including the first metal portion MT1.
[0198] A first cover layer 511 may be disposed between a second metal portion MT2 and a first metal portion MT1. The first metal portion MT1 (e.g., a portion of the first metal portion MT1) may be disposed between a first embankment BNK1 and the first cover layer 511. A contact hole CH may be formed in the first cover layer 511.
[0199] The second metal portion MT2 may be connected (e.g., electrically connected) between the first metal portions MT1 corresponding to adjacent first sensor patterns SP1. The second metal portion MT2 may be connected (e.g., electrically connected) to a portion of a plurality of first metal portions MT1 via contact holes CH. At least a portion of the second metal portion MT2 may not be connected (e.g., not electrically connected) to the first metal portion MT1 corresponding to the second sensor pattern SP2.
[0200] Figure 8 , Figure 9 and Figure 11 A diagram may be shown schematically of a display device 1 having a structure in which a second metal portion MT2 is located on a first metal portion MT1.
[0201] Reference Figure 8 , Figure 9 and Figure 11 The first metal part MT1 can be positioned between the second metal part MT2 and the display element part DPL.
[0202] As described above, the second metal portion MT2 may be connected (e.g., electrically connected) to the first sensor pattern SP1 that is adjacent to each other and is constructed by or includes the first metal portion MT1, or to the sensor patterns SP1 and SP2 of the first metal portion MT1.
[0203] The second cover layer 512 can be disposed between the second metal part MT2 and the first metal part MT1. The first metal part MT1 can be disposed between the first embankment BNK1 and the second cover layer 512.
[0204] The second metal portion MT2 may be connected (e.g., electrically connected) between the first metal portions MT1 corresponding to adjacent first sensor patterns SP1. The second metal portion MT2 may be connected (e.g., electrically connected) to a portion of a plurality of first metal portions MT1 via contact holes CH. In one or more embodiments, the contact holes CH may be located on the first metal portions MT1. The second metal portion MT2 may not be connected (e.g., not electrically connected) to the first metal portions MT1 corresponding to the second sensor pattern SP2.
[0205] Meanwhile, as described above, the light-emitting element LD applied to the display device 1 can be an organic light-emitting diode, an inorganic light-emitting diode, or a light-emitting element LD composed of or including organic and inorganic compounds.
[0206] According to an embodiment, when the light-emitting element LD applied to the display device 1 is an inorganic light-emitting diode, both the display element portion DPL and the color conversion portion CCL can be arranged on the pixel circuit portion PCL.
[0207] Figure 9 The structure of the display device 1 according to the embodiment can be shown when the light-emitting element LD applied to the display device 1 is an inorganic light-emitting diode.
[0208] According to an embodiment, the display element portion DPL may include a light-emitting element LD, a ripple pattern BNP, a first display electrode ELT1, a second display electrode ELT2, a first contact electrode CNE1, and a second contact electrode CNE2.
[0209] Reference Figure 9 The display element portion DPL may be located on the pixel circuit portion PCL. At least a portion of the first dam BNK1 and the first metal portion MT1 included in the color conversion portion CCL may be located at the same height as the display element portion DPL. In one or more embodiments, each of the first dam BNK1, the first metal portion MT1, and the display element portion DPL may be located between the pixel circuit portion PCL and the second cover layer 512 (along the third direction DR3 between the pixel circuit portion PCL and the second cover layer 512).
[0210] The light-emitting element (LD) can be located between the dam pattern BNPs. The LD can be an element comprising inorganic materials at the nanoscale or microscale, and can output light when an electrical signal is applied.
[0211] A light-emitting element (LD) may include a first semiconductor layer, a second semiconductor layer, an active layer, and an insulating film. The first semiconductor layer may include a semiconductor layer having a predetermined type (channel structure), and the second semiconductor layer may include a semiconductor layer of a different type (channel structure) than the first semiconductor layer. For example, the first semiconductor layer may include an N-type semiconductor layer, and the second semiconductor layer may include a P-type semiconductor layer.
[0212] The first semiconductor layer and the second semiconductor layer may include at least one semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN.
[0213] The active layer can be located between the first semiconductor layer and the second semiconductor layer. The active layer can have a single quantum well structure or a multiple quantum well structure.
[0214] When a set (e.g., predetermined) voltage or a higher electric field is applied to the two ends of the light-emitting element LD, electron-hole pairs can combine in the active layer and emit light.
[0215] An insulating film may cover at least a portion of the outer surface of the light-emitting element (LD). The insulating film can prevent or substantially prevent electrical short circuits and contamination that may occur due to contact between the active layer and materials other than the first and second semiconductor layers (specifically, other conductive materials).
[0216] The insulating film may include a transparent insulating material. As an example, the insulating film may include silicon oxide (SiO₂). x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y ), aluminum oxide (AlO) x At least one of ) and titanium dioxide (TiO2).
[0217] The dam pattern BNP can have an upwardly projecting shape, and the reflective partition can be formed by an electrode structure with reflectivity arranged on the dam pattern BNP. The light efficiency of the light-emitting element LD can be improved by forming the reflective partition.
[0218] The first display electrode ELT1 and the second display electrode ELT2 can be formed on the embankment pattern BNP. The first display electrode ELT1 and the second display electrode ELT2 formed on the embankment pattern BNP can guide the light emitted from the light-emitting element LD in a set (e.g., predetermined) direction, thereby increasing the luminous efficiency of the light-emitting element LD.
[0219] Each of the first contact electrode CNE1 and the second contact electrode CNE2 may contact (e.g., directly contact) at least a portion of the light-emitting element LD. At least a portion of the light-emitting element LD may not contact (e.g., not directly contact) the first contact electrode CNE1 and the second contact electrode CNE2.
[0220] The first contact electrode CNE1 and the second contact electrode CNE2 can be connected (e.g., electrically connected) to the light-emitting element LD. The first contact electrode CNE1 and the second contact electrode CNE2 can include at least one of a conductive material comprising indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO).
[0221] The second dam BNK2 can be located in the non-light-emitting region NLA. The second dam BNK2 can be a structure that defines the light-emitting region LA of pixel PXL. For example, the second dam BNK2 can be set in the boundary region between adjacent pixels PXL to surround the light-emitting region LA of pixel PXL.
[0222] In the plan view, the area where the second dike BNK2 is located can be superimposed on the area where the first dike BNK1 is located. Similar to the first dike BNK1, the second dike BNK2 can be superimposed on the location of the second metal part MT2 in the plan view.
[0223] According to an embodiment, light emitted from a light-emitting element LD included in a display device 1 can move along a set (e.g., predetermined) recovery path, thus providing a display device 1 with improved light efficiency.
[0224] Figure 12 This is a diagram illustrating a light recovery mechanism for light emitted from a display device according to an embodiment.
[0225] As described above, the light output from the light-emitting element LD can be transmitted through the color conversion section CCL and can be provided to the outside.
[0226] In the following description, for ease of description, the description is given based on the light passing through the second wavelength conversion pattern 540 of the color conversion section CCL, and the description of other structures including the first wavelength conversion pattern 530 and the light transmission pattern 550 may be omitted to prevent repetition.
[0227] Reference Figure 12The light output from the light-emitting element LD can pass through the second wavelength conversion pattern 540 and can be emitted to the outside.
[0228] Light emitted from the light-emitting element LD can be transmitted through the second wavelength conversion pattern 540 along the first path 712, the second path 714 and the third path 716.
[0229] Light provided along the first path 712 can reach the first metal portion MT1 located on one side of the second wavelength conversion pattern 540. Light provided along the second path 714 can reach the second wavelength conversion material 541 but not the first metal portion MT1. Light provided along the third path 716 can reach the first metal portion MT1 located on the other side of the second wavelength conversion pattern 540.
[0230] Light supplied to the first metal portion MT1 along the first path 712 and the third path 716 can be again supplied to at least a portion of the second wavelength conversion pattern 540 through the reflective properties of the first metal portion MT1. As a result, the first metal portion MT1 formed on the first embankment BNK1 facing the second wavelength conversion pattern 540 can allow light supplied from the light-emitting element LD to be emitted to at least one area or outside of the second wavelength conversion pattern 540, thereby improving the luminous efficiency of the display device 1.
[0231] As described above, the first metal portion MT1 can be used as a sensor electrode of the display device 1. That is, the first metal portion MT1 can be used as a sensor electrode and can also perform a reflector function in parallel for light applied from the light-emitting element LD. Therefore, the number of structures or components required for the display device 1 can be reduced, resulting in reduced process or manufacturing costs.
[0232] According to an embodiment, even if the first dam BNK1 included in the display device 1 does not contain light-blocking material and / or reflective material, the light efficiency can be improved by the first metal portion MT1 arranged on the first dam BNK1.
[0233] The first dam BNK1 may include organic or inorganic materials as described above, and the light-blocking properties and / or reflectivity of the materials applied to the first dam BNK1 are not limited to the specific materials with high or low light-blocking properties and / or reflectivity as described above.
[0234] However, according to related technologies, the first barrier BNK1 can define a non-light-emitting region NLA, so light can not be transmitted to the area where the first barrier BNK1 is located. That is, in order to improve the light efficiency of the display device 1, the first barrier BNK1 can be formed of a light-blocking material and / or a reflective material.
[0235] In one or more embodiments, when the first dam BNK1 is composed of or includes light-blocking and / or reflective materials, it becomes difficult to form the first dam BNK1. Specifically, when the first dam BNK1 is composed of or includes light-blocking and / or reflective materials, during the exposure process for forming the first dam BNK1, light may not be sufficient to penetrate the lower region of the first dam BNK1. Therefore, during the development process for the first dam BNK1, an undercut phenomenon occurs, where a portion of the lower region is removed. Furthermore, during the cleaning process, the first dam BNK1 where the undercut phenomenon occurs may not be fixed in a set (e.g., predetermined) position. The problems described above are intended to be improved by a reflow process. However, according to the reflow process, a new problem arises where the wavelength conversion material disposed between the first dam BNK1s (e.g., quantum dots as the second wavelength conversion material 541) is not adequately positioned.
[0236] However, according to embodiments of this disclosure, the first dam BNK1 may not be composed of or contain any light-blocking and / or reflective materials. When the first dam BNK1 comprises a material with low light-blocking properties and / or reflectivity, light can sufficiently reach the lower portion of the first dam BNK1 during the exposure process of the first dam BNK1 described above, resulting in no undercutting phenomenon occurring in the first dam BNK1.
[0237] Finally, according to the embodiment, since the problem occurring while performing the process for the first dam BNK1 is solved, the optical efficiency can be improved by forming the first metal portion MT1 on the first dam BNK1. Furthermore, the first metal portion MT1 can additionally function as a sensor electrode. Therefore, the number of process steps (operations) can be reduced, and additional process costs can be lowered.
[0238] The above description is merely an example of the technical spirit of this disclosure, and those skilled in the art will be able to make various modifications and changes without departing from the basic characteristics of this disclosure. Therefore, the embodiments of this disclosure described above can be implemented individually or in combination with each other.
[0239] Although this disclosure has been specifically shown and described with reference to some exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made herein without departing from the spirit and scope of this disclosure as set forth in the claims and their equivalents.
Claims
1. A display device comprising: a substrate; a display element portion on a surface of the substrate, the display element portion including a plurality of display pixels; a color conversion portion on the display element portion, the color conversion portion including a plurality of banks and a wavelength conversion pattern between the plurality of banks; and a sensor electrode configured to obtain information of a touch input, wherein the sensor electrode includes a first conductive layer disposed on at least a portion of a surface of the plurality of banks, and wherein at least a portion of the first conductive layer is on a side surface of the plurality of banks. The sensor electrode further includes a plurality of first sensor patterns forming first lines along a first direction and a plurality of second sensor patterns forming second lines along a second direction different from the first direction.
2. The display device according to claim 1, wherein A first sensor pattern of the plurality of first sensor patterns is at least a portion of the first conductive layer, and a second sensor pattern of the plurality of second sensor patterns is another portion of the first conductive layer.
3. The display device according to claim 2, wherein The first conductive layer overlaps at least one bank of the plurality of banks in a plan view, and 4. The display device according to claim 1, wherein wherein the first conductive layer is directly disposed on the at least a portion of the surface of the plurality of banks. The first conductive layer included in the sensor electrode is disposed in a grid pattern.
5. The display device according to claim 1, wherein At least a portion of the first conductive layer electrically connects adjacent first sensor patterns of the plurality of first sensor patterns to each other.
6. The display device according to claim 2, wherein The display device includes a light emitting region and a non-light emitting region separated from each other by at least one bank of the plurality of banks, and the first conductive layer is located in the non-light emitting region.
7. The display device according to claim 1, wherein 8. The display device according to claim 2, further comprising: a second conductive layer different from the first conductive layer.
9. The display device according to claim 8, further comprising: a cap layer between the first conductive layer and the second conductive layer. The first conductive layer and the second conductive layer are electrically connected to each other through a contact hole in the cap layer.
10. The display device of claim 9, wherein, The second conductive layer is between the first conductive layer and the display element portion.
11. The display device of claim 8, wherein, The second conductive layer overlaps at least one bank of the plurality of banks in a plan view.
12. The display device of claim 8, wherein, The first conductive layer and the second conductive layer include a metal.
13. The display device of claim 8, wherein, At least a portion of the second conductive layer electrically connects adjacent second sensor patterns of the plurality of second sensor patterns to each other.
14. The display device of claim 8, wherein, The first conductive layer and the second conductive layer overlap each other in a plan view.
15. The display device of claim 8, wherein, The wavelength conversion pattern includes at least one of a quantum dot, a quantum rod, and a phosphor.
16. The display device of claim 1, wherein, 17. The display device according to claim 1, further comprising: a filling layer between the first conductive layer and the display element portion.
18. The display device according to claim 1, further comprising: a color filter portion including a color filter to selectively transmit light having a specific wavelength. 19. The display device of claim 1, wherein, The display pixels in the plurality of display pixels are at least one of an organic light emitting diode, an inorganic light emitting diode, and a diode, and the display pixels include an organic compound and an inorganic compound.
Citation Information
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