Temperature measuring device, heat treatment device, and temperature measuring method

Abstract

The present application provides a temperature measuring device capable of measuring the temperature of a substrate when heated by a high-temperature hot plate, a substrate processing device, and a temperature measuring method. The temperature measuring device includes a measurement substrate carrying a sensor for measuring temperature, an information processing unit that acquires the detection results of the sensor, and a cable connecting the sensor and the information processing unit. The information processing unit is configured to be detachably mounted on a mounting portion opposite a cooling region from a heating region provided with a hot plate. The cable is configured to follow the movement of the measurement substrate when the measurement substrate is placed on the hot plate by moving a cooling plate carrying the measurement substrate from the cooling region to the heating region while the information processing unit is mounted on the mounting portion.

Description

Technical Field

[0001] This invention relates to a temperature measuring device, a heat treatment device, and a temperature measuring method. Background Technology

[0002] Patent Document 1 includes: a processing unit that performs a predetermined process on a substrate; a storage unit that stores a temperature-measuring substrate equipped with a temperature sensor and a storage unit that stores temperature measurement data measured by the temperature sensor, and collects the temperature measurement data stored in the storage unit of the temperature-measuring substrate; a transport mechanism that transports the substrate between the storage unit and the processing unit; and a temperature control mechanism that controls a temperature adjustment mechanism related to the predetermined process based on the temperature measurement data collected from the temperature-measuring substrate transported from the processing unit to the storage unit, so that the temperature state of the predetermined process becomes a preset temperature state.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-157896 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The present invention provides a temperature measuring device, a substrate processing device, and a temperature measuring method capable of simulating the temperature of a substrate when heated by a hot plate at high temperature.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the present invention is a temperature measuring device, comprising: a measuring substrate on which a sensor for measuring temperature is mounted; an information processing unit for acquiring the detection result of the sensor; and a cable connecting the sensor and the information processing unit. The information processing unit is configured to be detachably mounted on a mounting portion opposite to a heating area where a hot plate is provided, separated by a cooling area. The cable is configured to follow the movement of the measuring substrate when the measuring substrate is mounted on the mounting portion by moving a cooling plate on which the measuring substrate is mounted from the cooling area to the heating area.

[0010] Invention Effects

[0011] According to the present invention, a temperature measuring device, a substrate processing device, and a temperature measuring method are provided that can simulate the temperature of a substrate when heated by a hot plate at a high temperature. Attached Figure Description

[0012] Figure 1This is an explanatory diagram showing the general internal structure of a wafer processing system equipped with a heat treatment apparatus for heat treatment of wafers.

[0013] Figure 2 This is a schematic diagram showing the outline of the internal structure of the front side of a chip processing system.

[0014] Figure 3 This is a schematic diagram showing the outline of the internal structure on the back side of a chip processing system.

[0015] Figure 4 It is a schematic longitudinal cross-sectional view showing the general structure of the heat treatment apparatus.

[0016] Figure 5 It is a schematic cross-sectional view showing the general structure of the heat treatment apparatus.

[0017] Figure 6 This is a side view showing an example of a temperature measuring device.

[0018] Figure 7 This is a top view showing an example of a temperature measuring device.

[0019] Figure 8 It is a diagram showing the state of the temperature measuring device in a certain step of a temperature measurement method.

[0020] Figure 9 It is a diagram showing the state of the temperature measuring device in a certain step of a temperature measurement method.

[0021] Figure 10 It is a diagram showing the state of the temperature measuring device in a certain step of a temperature measurement method.

[0022] Figure 11 This is a side view showing another example of a temperature measuring device.

[0023] Figure 12 This is a top view showing another example of a temperature measuring device.

[0024] Figure 13 For explanation Figure 11 and Figure 12 A diagram illustrating the effect of an example temperature measuring device.

[0025] Figure 14 For explanation Figure 11 and Figure 12 A diagram illustrating the effect of an example temperature measuring device.

[0026] Figure 15 For explanation Figure 11 and Figure 12 A diagram illustrating the effect of an example temperature measuring device.

[0027] Figure 16 For explanation Figure 11 and Figure 12 A diagram illustrating the effect of an example temperature measuring device.

[0028] Explanation of reference numerals in the attached figures

[0029] 40 Heat treatment apparatus

[0030] 122 Heating Zone

[0031] 123 Cooling Area

[0032] 132 Hot Plate

[0033] 160 cooling plate

[0034] 200 and 300 temperature measuring devices

[0035] 201 Measurement chip

[0036] 202 Information Processing Department

[0037] 204 cable

[0038] 211 Temperature Sensor

[0039] F dividing wall

[0040] W chip. Detailed Implementation

[0041] In the manufacturing processes of semiconductor devices, etc., specific processes are performed to form a resist pattern on a semiconductor wafer (hereinafter referred to as a "wafer"). These specific processes include, for example, resist coating process, which involves supplying a resist solution to the wafer to form a resist film; exposure process, which involves exposing the resist film to light; PEB (Post Exposure Bake) process, which involves heating after exposure to promote chemical reactions within the resist film; and development process, which involves developing the exposed resist film.

[0042] The aforementioned heat treatments, such as PEB processing, are typically performed by a heat treatment apparatus equipped with a hot plate capable of mounting and heating the wafer. The heat treatment performed in this apparatus aims to, for example, make the temperature of the wafer uniform within its plane. This is to ensure that the size of the resist pattern is uniform within its plane.

[0043] As described above, in order to uniformly heat the wafer in-plane through heat treatment by a heat treatment apparatus, the temperature of the wafer when heated by a hot plate has been measured in advance using simulation, and the heating amount of the hot plate is corrected based on the results.

[0044] As a technique for simulating the measurement of the temperature of a wafer when heated by a hot plate, there is, for example, a technique using a temperature measuring wafer equipped with multiple temperature sensors and a memory (see Patent Document 1). In this technique, the temperature measuring wafer is heated by a hot plate in the same manner as a conventional wafer, and the temperature is measured by each temperature sensor and stored in the memory as temperature measurement data.

[0045] However, sometimes a hot plate is heated to a high temperature, such as 250°C or higher, and used to heat the chip. In this case, when using a temperature measuring chip as disclosed in Patent Document 1, the memory may malfunction due to being exposed to a high-temperature environment. When a malfunction occurs, the temperature measurement data stored in the memory cannot be used, and therefore, temperature measurement is also impossible.

[0046] Therefore, the present invention provides a temperature measuring device, a substrate processing device, and a temperature measuring method capable of simulating the temperature of a substrate when heated by a hot plate at high temperature.

[0047] Hereinafter, the temperature measuring device, heat treatment device, and temperature measuring method of this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional configuration are labeled with the same reference numerals, thus omitting repeated descriptions.

[0048] <Chip Processing System>

[0049] Figure 1 This is an explanatory diagram showing the general internal structure of a wafer processing system 1 equipped with a heat treatment apparatus for heat treatment of wafers. Figure 2 and Figure 3 These are schematic diagrams showing the outline internal structure of the front and back sides of the wafer processing system 1. Furthermore, in the following example, the wafer processing system 1 is a coating and developing system for performing coating and developing processes on a wafer W.

[0050] like Figure 1 As shown, the substrate processing system 1 includes: a cartridge station 10 for feeding and discharging a cartridge C containing a plurality of wafers W; and a processing station 11 having a plurality of various processing devices for performing prescribed processing on the wafers W. Furthermore, the wafer processing system 1 has a structure that integrates the cartridge station 10, the processing station 11, and an interface station 13 adjacent to the processing station 11 for transferring wafers W between the processing station 11 and the exposure apparatus 12.

[0051] A cassette mounting platform 20 is provided at the cassette station 10. A cassette mounting plate 21 is provided at the cassette mounting platform 20, which mounts the cassette C when it is fed into or out of the substrate processing system 1.

[0052] A wafer transport device 23 is provided at the cassette station 10, which is movable on a transport path 22 extending in the X direction. The wafer transport device 23 is movable in the vertical direction and about the vertical axis (θ direction), and is able to transport wafers W between the cassettes C on each mounting plate 21 and the handover device of the third block G3 of the processing station 11 described later.

[0053] Processing station 11 is equipped with multiple blocks, such as four blocks G1, G2, G3, and G4, each containing various devices. For example, on the front side of processing station 11... Figure 1 Block G1 is located on the negative X-direction side of the processing station 11. Figure 1 The second block G2 is located on the positive X-direction side of the processing station 11. Additionally, on the box station 10 side of the processing station 11 (… Figure 1 The third block G3 is located on the negative Y-direction side of the processing station 11, on the interface station 13 side. Figure 1 The fourth block G4 is set on the positive Y-direction side.

[0054] In block G1, such as Figure 2 The diagram shows multiple liquid processing devices arranged sequentially from bottom to top, such as a developing device 30, a lower antireflective film forming device 31, a resist coating device 32, and an upper antireflective film forming device 33. The developing device 30 is used to develop the wafer W. The lower antireflective film forming device 31 is used to form an antireflective film (hereinafter referred to as the "lower antireflective film") on the lower layer of the resist film on the wafer W. The resist coating device 32 is used to coat the wafer W with resist liquid to form a resist film. The upper antireflective film forming device 33 is used to form an antireflective film (hereinafter referred to as the "upper antireflective film") on the upper layer of the resist film on the wafer W.

[0055] For example, three of each of the developing apparatus 30, the lower antireflective film forming apparatus 31, the resist coating apparatus 32, and the upper antireflective film forming apparatus 33 are arranged side by side in the horizontal direction. Furthermore, the number and arrangement of the aforementioned developing apparatus 30, lower antireflective film forming apparatus 31, resist coating apparatus 32, and upper antireflective film forming apparatus 33 can be arbitrarily selected.

[0056] In the aforementioned developing apparatus 30, lower antireflective film forming apparatus 31, resist coating apparatus 32, and upper antireflective film forming apparatus 33, a predetermined processing liquid is supplied to the wafer W, for example, by spin coating. In spin coating, for example, the processing liquid is released onto the wafer W from a release nozzle, and the wafer W is rotated to allow the processing liquid to spread on the surface of the wafer W.

[0057] In block G2, such as Figure 3The device shown includes a heat treatment apparatus 40 for heat treatment such as heating and cooling of the wafer W, an adhesion apparatus 41 for improving the adhesion of the resist solution to the wafer W, and a peripheral exposure apparatus 42 for exposing the outer periphery of the wafer W. The heat treatment apparatus 40, the adhesion apparatus 41, and the peripheral exposure apparatus 42 are arranged side by side in the vertical and horizontal directions, and their number and arrangement can be arbitrarily selected.

[0058] For example, in block 3 G3, multiple handover devices 50, 51, 52, 53, 54, and 55 are arranged sequentially from bottom to top. In addition, in block 4 G4, multiple handover devices 60, 61, and 62 are arranged sequentially from bottom to top.

[0059] like Figure 1 As shown, a wafer transport region D, which serves as a substrate transport region, is formed in the area surrounded by blocks G1 to G4. A wafer transport device 70, serving as a substrate transport apparatus, is disposed in the wafer transport region D, for example.

[0060] The wafer transport device 70 has a transport arm 70a that is movable, for example, in the Y direction, X direction, θ direction, and vertical direction. The wafer transport device 70 is capable of moving within the wafer transport area D, transporting the wafer W to designated locations within the surrounding first block G1, second block G2, third block G3, and fourth block G4. The wafer transport device 70 is, for example, as shown in... Figure 3 As shown, multiple devices are arranged vertically and horizontally, capable of transporting the wafer W to a specified device, for example, at the same height as each block G1 to G4.

[0061] In addition, a reciprocating transport device 80 is provided in the wafer transport area D to transport the wafer W linearly between the third block G3 and the fourth block G4.

[0062] The reciprocating transport device 80 can, for example, Figure 3 The reciprocating transport device 80 moves linearly in the Y direction while supporting the wafer W, transporting the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.

[0063] like Figure 1 As shown, a wafer transport device 90 is provided near the positive X-direction side of the third block G3. The wafer transport device 90 has a transport arm 90a that is movable in, for example, the X-direction, the θ-direction, and the vertical direction. The wafer transport device 90 can move vertically while supporting the wafer W to transport the wafer W to the various transfer devices within the third block G3.

[0064] Interface station 13 is provided with a wafer transport device 100 and a transfer device 101. The wafer transport device 100 has a transport arm that is movable in, for example, the Y direction, the θ direction, and the vertical direction. The wafer transport device 100 is capable of supporting the wafer W on the transport arm 100a and transporting the wafer W between the transfer devices, the transfer device 101 and the exposure device 12 in the fourth block G4.

[0065] In the above-mentioned chip processing system 1, such as Figure 1 A control device U is provided. The control device U is, for example, a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores programs for controlling the wafer processing in the wafer processing system 1, and programs for automatically adjusting the heating amount of the heater on the hot plate based on the measurement results of the temperature of the measuring wafer (described later). Alternatively, the above programs can be stored on a computer-readable storage medium and installed from that storage medium onto the control device U. Part or all of the program can be implemented using dedicated hardware (circuit board).

[0066] <Heat Treatment Equipment>

[0067] The structure of the heat treatment apparatus 40 will now be described. Figure 4 This is a schematic longitudinal cross-sectional view showing the general structure of the heat treatment apparatus 40. Figure 5 This is a schematic cross-sectional view showing the general structure of the heat treatment apparatus 40.

[0068] Heat treatment apparatus 40 Figure 4 and Figure 5 As shown, the device has a housing 120 capable of sealing its interior. A wafer feed outlet 121 for the wafer W is provided on the side of the housing 120 on the wafer transport area D side (negative side in the X direction). The feed outlet 121 is positioned opposite to an opening F1 formed in a partition wall F, which serves as a support member. The partition wall F surrounds the wafer transport area D and supports the heat treatment apparatus 40, the attachment device 41, etc. Furthermore, an opening and closing member (not shown) is provided at the feed outlet 121.

[0069] In addition, the heat treatment apparatus 40 has a heating region 122 for heating the wafer W and a cooling region 123 for cooling the wafer W within the housing 120. The heating region 122 is located on the side opposite to the wafer transport region D (positive side in the X direction), and the cooling region 123 is adjacent to the heating region 122 and is located on the wafer transport region D (negative side in the X direction).

[0070] In heating zone 122, such as Figure 4 As shown, a vertically movable cover 130 is provided on the upper side, and a hot plate storage part 131 forming the processing chamber S together with the cover 130 is provided on the lower side.

[0071] The cover 130 has a cylindrical shape with an opening on its lower surface, covering the upper surface of the wafer W placed on the hot plate 132 (described later). An exhaust section 130a is provided at the center of the upper surface of the cover 130. The atmosphere inside the processing chamber S is exhausted through the exhaust section 130a.

[0072] A wafer W is placed in the center of the hot plate receiving section 131, and a hot plate 132 is provided to heat the wafer W. The hot plate 132 has a disc shape with a certain thickness, and a heater 140 is disposed inside it. The heater 140 heats the hot plate 132, specifically, it heats the upper surface of the hot plate 132, i.e., the mounting surface of the wafer W. As the heater 140, a resistance heater can be used, for example. Furthermore, for example, the heater 140 is provided in each of the multiple regions that divide the upper surface of the hot plate 132, and the heating amount of the heater 140 can be adjusted for each region to adjust each region to a predetermined set temperature.

[0073] A lifting pin 141 that penetrates the hot plate 132 in the thickness direction is provided in the hot plate housing section 131. The lifting pin 141 can be raised and lowered by a lifting drive section 142 such as a cylinder, and can extend out of the upper surface of the hot plate 132 to transfer the wafer W between it and the cooling plate 160 described later.

[0074] For example, the hot plate storage section 131 Figure 4 As shown, it includes: an annular retaining member 150 that houses and holds the outer periphery of the hot plate 132; and a cylindrical support ring 151 that surrounds the outer periphery of the retaining member 150.

[0075] A cooling plate 160 is provided in the cooling region 123 to mount and cool the mounted wafer W. The cooling plate 160 has, for example, a generally square flat plate shape when viewed from above, and the end face on the side of the heating region 122 (positive side in the X direction) is curved in an arc shape. A cooling mechanism, such as a refrigerant flow path for supplying a refrigerant such as cooling water, is formed inside the cooling plate 160, which can adjust the cooling plate 160 to a predetermined set temperature.

[0076] Cooling plate 160, for example Figure 4 The cooling plate 160 is supported by a support arm 161, which is mounted on a track 162 extending in the X direction toward the heating zone 122. The cooling plate 160 can be moved on the track 162 by means of a drive mechanism 163 mounted on the support arm 161. Thus, the cooling plate 160 can be moved above the hot plate 132 on the heating zone 122 side.

[0077] For example, a direction of movement along the cooling plate 160 is formed in the cooling plate 160. Figure 5Two slits 164 (in the X direction) are formed from the end face of the cooling plate 160 on the heating region 122 side to near the center of the cooling plate 160. These slits 164 prevent interference between the cooling plate 160, which moves to the heating region 122 side, and the lifting pin 141 on the hot plate 132. Figure 4 As shown, a lifting pin 165 is provided below the cooling plate 160 in the cooling area 123. The lifting pin 165 can be raised and lowered by means of the lifting drive unit 166. The lifting pin 165 rises from below the cooling plate 160 and passes through the gap 164, extending above the cooling plate 160, for example, to exchange wafers W with the wafer transport device 70 that enters the interior of the housing 120 from the feed outlet 121.

[0078] Additionally, a plurality of support pins 167 are provided on the upper surface of the cooling plate 160 to support the wafer W at intervals, thus separating the back side of the wafer W from the upper surface of the cooling plate 160. The support pins 167 are formed in the shape of rods and are arranged to extend upward. The height of the support pins 167 is, for example, 2 mm.

[0079] <Chip Processing>

[0080] The following describes the wafer processing performed using wafer processing system 1.

[0081] First, a cassette C containing multiple wafers W is placed on a designated cassette mounting plate 21 of the cassette station 10. Then, the wafer transport device 23 sequentially removes each wafer W from the cassette C and transports it to, for example, a transfer device 52 in the third block G3 of the processing station 11.

[0082] Next, the wafer W is fed by the wafer transport device 70 into, for example, the lower anti-reflective film forming apparatus 31 of the first block G1, where a lower anti-reflective film is formed on the wafer W. Afterward, the wafer W is transported by the wafer transport device 70 to the heat treatment apparatus 40 of the second block G2 for heat treatment.

[0083] The wafer W, transported to the heat treatment apparatus 40, is first placed on a cooling plate 160. Next, the cooling plate 160 is moved above the hot plate 132. Then, a lifting pin 141 rises, transferring the wafer W from the cooling plate 160 to the lifting pin 141. Afterward, the cooling plate 160 moves away from the hot plate 132, and the lifting pin 141 descends, transferring the wafer W onto the hot plate 132. Then, the cover 130 descends to form the processing chamber S, and the heat treatment of the wafer W begins.

[0084] After the heat treatment of wafer W has been carried out for a predetermined time, the cover 130 rises, and the lifting pin 141 rises, causing wafer W to move above the hot plate 132. Meanwhile, the cooling plate 160 moves onto the hot plate 132. Then, the lifting pin 141 descends, transferring wafer W to the cooling plate 160. Afterward, the cooling plate 160 is moved to the cooling zone 123. Wafer W, having been transferred to the cooling plate 160, is cooled to room temperature in the cooling zone 123 and then discharged from the heat treatment apparatus 40.

[0085] After heat treatment in the heat treatment apparatus 40, the wafer W is transported by the wafer transport device 70 to the resist coating device 32, where a resist film is formed on the wafer W. Afterward, the wafer W is transported by the wafer transport device 70 to the heat treatment apparatus 40 for pre-baking. Furthermore, the same treatment as the heat treatment after the formation of the lower anti-reflective film is performed in the pre-baking process, as well as in the heat treatment after the formation of the anti-reflective film, the PEB treatment, and the post-baking process, which will be described later. However, the heat treatment apparatus 40s providing each heat treatment are different from one another.

[0086] Next, the wafer W is transported by the wafer transport device 70 to the upper anti-reflective film forming device 33, where an upper anti-reflective film is formed on the wafer W. Afterward, the wafer W is transported to the heat treatment device 40 for heat treatment. Then, the wafer W is transported by the wafer transport device 70 to the peripheral exposure device 42 for peripheral exposure treatment.

[0087] Next, wafer W is transported by wafer transport device 70 to transfer device 52, and then by reciprocating transport device 80 to transfer device 62 of block G4. Afterwards, wafer W is transported by wafer transport device 100 of interface station 13 to exposure device 12 for exposure processing with a predetermined pattern. Next, wafer W is transported by wafer transport device 100 to transfer device 60 of block G4. Afterwards, wafer W is transported by wafer transport device 70 to heat treatment device 40 for PEB processing.

[0088] Next, the wafer W is transported by the wafer transport device 70 to the developing device 30 for developing. After developing, the wafer W is transported by the wafer transport device 70 to the heat treatment device 40 for post-baking.

[0089] Next, wafer W is transported by wafer transport device 70 to transfer device 50 in block G3. Afterwards, wafer W is transported by wafer transport device 23 of cassette station 10 to cassette C of designated cassette mount 21, completing a series of photolithography steps. Then, the same series of photolithography steps are performed on subsequent wafers W within the same cassette C.

[0090] <Temperature measuring device>

[0091] The following describes an example of a temperature measuring device used to simulate the temperature on the hot plate 132 of the heat treatment apparatus 40. Figure 6 This is a side view showing an example of a temperature measuring device, indicating its installation in the heat treatment apparatus 40. The longitudinal section of the heat treatment apparatus 40 only shows the main parts related to temperature measurement. Figure 7 This is a top view showing an example of a temperature measuring device.

[0092] like Figure 6 and Figure 7 As shown, the temperature measuring device 200 includes a measuring chip 201 serving as a measuring substrate, an information processing unit 202, a mounting component 203, and a cable 204.

[0093] The measuring chip 201 has a body 210 formed from the same material as the chip W and having the same shape as the chip W. Multiple temperature sensors 211 are mounted on the upper surface of the measuring chip 201 (specifically, the upper surface of the body 210). The temperature sensors 211 are... Figure 7 In this example, five sensors are mounted: one at the center of the measuring chip 201, and the other four at equal intervals on the same circumference centered on the center of the measuring chip 201. The temperature sensor 211 can be, for example, a thermocouple. Alternatively, only one temperature sensor 211 may be mounted.

[0094] The measuring wafer 201 is placed on the cooling plate 160 located in the cooling region 123. Similar to a normal wafer W, it is transported from the cooling plate 160 to the heating region 122, and is transferred from the cooling plate 160 to the heating plate 132.

[0095] The information processing unit 202 acquires at least the detection results from the temperature sensor 211. The information processing unit 202 has a rectangular housing 220. Inside the housing 220, although not shown in the figure, there are, for example, an A / D converter for performing A / D conversion on the detection results from the temperature sensor 211, a processor for correcting the detection results after A / D conversion, a memory for storing the corrected detection results from the temperature sensor 211 and a correction value table used in the correction, and a communication unit for communicating with the control device U and transmitting the detection results. Furthermore, communication between the communication unit and the control device U can be wired or wireless. In addition, a wiring board (not shown) housing the A / D converter, processor, memory, and communication unit is also provided inside the housing 220.

[0096] Mounting component 203 is a component for detachably mounting the information processing unit 202 to the partition wall F, wherein the partition wall F is the mounting part opposite the heating zone 122 across the cooling zone 123. Mounting component 203 has a hook portion 230 and a fixing portion 231.

[0097] The hook portion 230 engages with the lower edge of the partition wall F. The hook portion 230 is configured to extend from the upper end of the fixing portion 231 toward the heat treatment apparatus 40. The fixing portion 231 is formed as a flat plate extending along the partition wall F, and the information processing unit 202 is fixed on the side opposite to the partition wall F.

[0098] The information processing unit 202 is mounted on the partition wall F via the mounting member 203 by engaging the hook 230 with the lower edge of the opening F1 of the partition wall F. Furthermore, the information processing unit 202 can be removed from the partition wall F by disengaging the hook 230 from the lower edge of the opening F1 of the partition wall F.

[0099] Cable 204 electrically connects the temperature sensor 211 of the measuring chip 201 to the information processing unit 202, and sends the detection result of the temperature sensor 211 to the information processing unit 202. Cable 204 includes multiple sheaths 240 and a flat cable 241.

[0100] The wire 240 is obtained by covering a metal wire made of a metallic material such as nickel with an insulating and heat-resistant material (e.g., ceramic). One end of each wire 240 is connected to a corresponding temperature sensor 211, and the other end is connected to one end of a flat cable 241. The portion of the wire 240 located above the measuring wafer 201 is fixed to the upper surface of the body 210 of the measuring wafer 201, for example, by a heat-resistant adhesive.

[0101] The flat cable 241 is, for example, constructed from a flexible printed circuit (FPC) board based on polyimide, and has multiple wiring patterns (not shown) internally. One end of the flat cable 241 is connected to the other end of the sheath 240, and the other end of the flat cable 241 is connected to the information processing unit 202. Specifically, one end of each wiring pattern of the flat cable 241 is connected to the other end of the corresponding sheath 240, and the other end of each wiring pattern is connected to the information processing unit 202.

[0102] The cable 204 is configured to follow the movement of the measuring wafer 201 when the information processing unit 202 is installed on the partition wall F. Specifically, the cable 204 is configured to follow the movement of the measuring wafer 201 when the cooling plate 160, on which the measuring wafer 201 is placed, is moved from the cooling area 123 to the heating area 122 and the measuring wafer 201 is placed on the hot plate 132, with the information processing unit 202 installed on the partition wall F. More specifically, the cable 204 has the degree of ability, length, and flexibility to follow the movement of the measuring wafer 201 when the information processing unit 202 is installed on the partition wall F.

[0103] In addition, the portion of the cable 204 located in the heating area 122 when the measuring wafer 201 is placed on the hot plate 132 is composed of a wire sheath 240.

[0104] <Temperature Measurement Methods>

[0105] Next, use Figures 8-10 This describes the temperature measurement method using the temperature measuring device 200 described above. Figures 8-10 A diagram showing the state of the temperature measuring device 200 during a portion of the temperature measurement method.

[0106] (1. Ensure smooth traffic flow)

[0107] First, the operator ensures the movement path in accordance with the position of the heat treatment apparatus 40 (hereinafter referred to as "the heat treatment apparatus 40 as the object") that performs temperature measurements.

[0108] For example, when the heat treatment apparatus 40 is located on the side of the cassette station 10, the operator removes part or all of the transfer devices 50-55 of the third block G3, and uses the control device U to move the transport arm 70a of the wafer transport apparatus 70 to the side of the interface station 13. Thus, the operator can enter the wafer transport area D from the cassette station 10 and move to the front of the heat treatment apparatus 40.

[0109] Furthermore, when the heat treatment apparatus 40 is located on the interface station 13 side, the operator removes part or all of the handover devices 60-62 of the fourth block G4, and uses the control device U to move the transport arm 70a of the wafer transport apparatus 70 to the box station 10 side. Thus, the operator can enter the wafer transport area D from the interface station 13 and move to the front of the heat treatment apparatus 40.

[0110] (2. Heating of the hot plate)

[0111] Heating of the hot plate 132 can begin during or before the routing is secured. Furthermore, the hot plate 132 can be heated to a higher set temperature of 250°C or higher, making it suitable for heat treatment of the wafer W. Alternatively, heating of the hot plate 132 can begin after the routing is secured.

[0112] (3. Installation of Information Processing Unit 202)

[0113] Then, the operator entering the wafer transport area D installs the information processing unit 202 of the temperature measuring device 200 onto the partition wall F. Specifically, the operator entering the wafer transport area D hooks the hook 230 of the mounting member 203 onto the lower edge of the opening F1 of the partition wall F, which corresponds to the heat treatment device 40 to be processed. Through the engagement of the hook 230 with the lower edge of the opening F1 of the partition wall F, the information processing unit 202 is installed onto the partition wall F via the mounting member 203. The information processing unit 202 is installed in a manner that places it within the wafer transport area D.

[0114] (4. Mounting of the measuring chip 201)

[0115] Next, the operator places the measurement wafer 201 on the cooling plate 160 located in the cooling zone 123. Specifically, the operator places the measurement wafer 201 on the cooling plate 160 in a predetermined position in the cooling zone 123 via the support pin 167 with a predetermined orientation. Alternatively, the information processing unit 202 can be installed after the measurement wafer 201 has been placed on the cooling plate 160. After installing the information processing unit 202 and placing the measurement wafer 201, the operator exits the wafer processing system 1.

[0116] (5. Handover of hot plate 132)

[0117] Next, the measurement wafer 201 is moved from the cooling plate 160 to the heating area 122 and transferred to the hot plate 132. Specifically, firstly, the cooling plate 160 on which the measurement wafer 201 is placed... Figure 8 The plate moves from the cooling zone 123 to the heating zone 122. This movement continues until the cooling plate 160 is above the heating plate 132. Then, as shown... Figure 9 As shown, the lifting pin 141 rises, thereby transferring the measuring chip 201 on the cooling plate 160 to the lifting pin 141 and causing it to rise. Afterwards, the cooling plate 160 moves from the heating area 122 to the cooling area 123. Accompanying this, as... Figure 10 As shown, the lifting pin 141 descends, placing the measuring chip 201 onto the hot plate 132.

[0118] (6. Temperature detection)

[0119] Then, temperature detection is performed using temperature sensor 211. Specifically, first, the cover 130 descends to form the processing chamber S, and the heating process of the wafer W begins. After a predetermined time has elapsed since the start of the heating process, when the temperature of the measuring wafer 201 stabilizes, temperature detection begins using temperature sensor 211. At the start of temperature detection, the temperature of the portion of the measuring wafer 201 (body 210) equipped with the temperature sensor 211 is detected using each temperature sensor 211. The detection results are transmitted via cable 204 to information processing unit 202, which is mounted on a partition wall F opposite to the heating zone 122 and separated by cooling zone 123. Furthermore, the detection results are transmitted from information processing unit 202 to control device U. Based on the detection results, control device U calculates, i.e. measures, the temperature of the portion of the measuring wafer 201 equipped with temperature sensor 211. Furthermore, based on the temperature measurement results of the measuring wafer 201, control device U automatically adjusts the heating amount of heater 140 on hot plate 132. After this correction, temperature detection and measurement are performed again in the same manner as described above. The automatic adjustment of the heating amount of heater 140 to hot plate 132, temperature detection, and temperature measurement are repeated until the desired temperature measurement result is obtained. When the desired temperature measurement result is obtained, the temperature detection ends.

[0120] (7. Connection of cooling plate 160 located in heating zone 122)

[0121] After temperature detection is completed, the measuring chip 201 is returned to the cooling plate 160. Specifically, the cooling plate 160 is then moved to the heating area 122, and the measuring chip 201 is placed on the cooling plate 160 located in the heating area 122. More specifically, firstly, the lifting pin 141 rises, and the measuring chip 201 on the hot plate 132 is transferred to the lifting pin 141 and raised. Then, the cooling plate 160 is moved to the heating area 122 and inserted between the measuring chip 201 and the hot plate 132. Then, the lifting pin 141 descends, placing the measuring chip 201 on the cooling plate 160.

[0122] (8. Cooling of the measuring wafer 201)

[0123] Next, the measurement wafer 201 is cooled using the cooling plate 160. Specifically, the cooling plate 160 on which the measurement wafer 201 is mounted is moved to the cooling region 123, where the measurement wafer 201 is cooled using the cooling plate 160. The measurement wafer 201 is cooled to room temperature, for example.

[0124] (9. Unload)

[0125] After cooling, the operator entering the wafer transport area D removes the measuring wafer 201 from the cooling plate 160 and removes the information processing unit 202 and the mounting component 203 from the partition wall F.

[0126] The above steps are performed sequentially in each heat treatment apparatus 40. Alternatively, multiple temperature measuring devices 200 can be prepared to perform temperature measurements in the heat treatment apparatus 40 in parallel.

[0127] In the temperature measurement method of this embodiment, a temperature measuring device 200 is used as described above. This temperature measuring device 200 includes a cable 204 connecting a temperature sensor 211 mounted on a measuring wafer 201 and an information processing unit 202 that acquires the detection results from the temperature sensor 211. Furthermore, the cable 204 is configured to follow the movement of the measuring wafer 201 when the cooling plate 160, on which the measuring wafer 201 is mounted, is moved from the cooling region 123 to the heating region 122 and the measuring wafer 201 is placed on the hot plate 132, with the information processing unit 202 detachably mounted on the partition wall F.

[0128] By using such a temperature measuring device 200, the information processing unit 202 can be mounted on the partition wall F, and the temperature of the measuring chip 201 heated by the hot plate 132 can be measured based on the detection result of the temperature sensor 211 mounted on the measuring chip 201. The information processing unit 202 contains components that may malfunction or break in high-temperature environments (e.g., the A / D converter, processor, memory, communication unit, and wiring substrate in the aforementioned housing 220). However, the partition wall F on which the information processing unit 202 is mounted is separated from the heating area 122 by the cooling area 123, so even when the hot plate 132 is at a high temperature, the aforementioned components will not malfunction or break.

[0129] Therefore, even when the hot plate 132 is at a high temperature, the temperature of the measuring wafer 201 heated by the hot plate 132 can be measured. Thus, regardless of whether the hot plate 132 is at a high or low temperature, the temperature of the wafer W when heated by the hot plate 132 can be measured in a simulated manner.

[0130] As a temperature measurement method other than that of the present invention, an operator may consider opening the back panel of the wafer processing system 1, directly placing a measurement wafer (similar to the measurement wafer 201) onto the hot plate 132 for temperature measurement, and then removing the measurement wafer directly from the hot plate 132 after measurement (hereinafter referred to as the "alternative method"). In this alternative method, if the hot plate 132 is heated to a set temperature when the measurement wafer is placed on it, the operator cannot operate safely. Therefore, for example, the hot plate 132 is kept at room temperature when the measurement wafer is placed on it, and then heated from room temperature to the set temperature after placement. This heating requires a long time, therefore, temperature measurement cannot be safely performed in a short time in the above-described alternative method.

[0131] In this embodiment, the operator places the measuring chip 201 on a cooling plate 160 located in the cooling region 123, and then places the measuring chip 201 onto the hot plate 132 via the cooling plate 160. Therefore, the hot plate 132 can be heated to a set temperature before the measuring chip 201 is placed on it. Thus, according to this embodiment, the heating of the hot plate 132 after placing the measuring chip 201, which is required in the alternative method described above, is not necessary, and temperature measurement can be safely performed in a short time.

[0132] Furthermore, in the aforementioned alternative method, if the hot plate 132 and the measuring chip are heated to a set temperature when removing the measuring chip, the operator cannot operate safely. Therefore, for example, after temperature measurement, the hot plate 132 and the measuring chip are cooled to room temperature before the measuring chip is removed from the hot plate 132. Since this cooling process takes a relatively long time, from this perspective, the aforementioned alternative method cannot safely perform temperature measurements in a short period of time.

[0133] In this embodiment, the temperature measurement method involves cooling the measuring wafer 201 using the cooling plate 160, and then removing the measuring wafer 201 from the cooling plate 160 located in the cooling area 123 by an operator. Therefore, the cooling of the hot plate 132 after temperature measurement, which is required in the alternative method described above, is unnecessary, and the measuring wafer 201 can be cooled to room temperature in a short time. Thus, according to this embodiment, temperature measurement can be safely performed in a short time.

[0134] Furthermore, in the aforementioned alternative methods, the operator operates from the back side of the wafer processing system 1. There is generally insufficient space on the back side of the wafer processing system 1, resulting in poor operability and making it difficult for the operator to move to the vicinity of the heat treatment apparatus 40. In contrast, in the temperature measurement method of this embodiment, the operator operates from the wafer transport area D of the wafer processing system 1. Sufficient space is ensured in the wafer transport area D; therefore, operations performed from the wafer transport area D are more operable than those performed from the back side, and the operator can easily move to the vicinity of the heat treatment apparatus 40.

[0135] Furthermore, according to this embodiment, compared with the above-described alternative method, the time required for temperature measurement can be shortened by more than 50 hours.

[0136] Furthermore, according to this embodiment, temperature measurement can be performed in a short time, thus shortening the time required for automatic adjustment of the heating amount of the hot plate 132 in the heat treatment apparatus 40, which includes the time required for temperature measurement.

[0137] <Another example of a temperature measuring device>

[0138] Below, another example of a temperature measuring device will be described. Figure 11 This is a side view showing another example of a temperature measuring device, indicating its installation in the heat treatment apparatus 40. For the heat treatment apparatus 40, only a partial longitudinal section is used to show the main part of the temperature measuring device. Furthermore, in Figure 11 In the text, the cross-section represents only a portion of the guide plate 301 described later. Figure 12 This is a top view showing another example of a temperature measuring device. Figures 13-16 It is used for explanation Figure 11 and Figure 12 A diagram illustrating the effect of an example temperature measuring device.

[0139] Figure 11 In addition to the measuring chip 201, the information processing unit 202, the mounting component 203 and the cable 204, the temperature measuring device 300 also has a guide plate 301 as an intermediate component.

[0140] The guide plate 301 is positioned relative to the cooling plate 160.

[0141] The measurement chip 201 is placed on the cooling plate 160 via the guide plate 301. In other words, the measurement chip 201 is placed on the cooling plate 160 with the guide plate 301 spaced apart from the cooling plate 160.

[0142] Additionally, the measurement wafer 201 is cooled by the cooling plate 160 via the guide plate 301. Specifically, the measurement wafer 201 is cooled by the guide plate 301, which is cooled by the cooling plate 160.

[0143] The guide plate 301 is positioned relative to the cooling plate 160 by the engagement of a notch (not shown) formed in the cooling plate 160 and a positioning protrusion (not shown) formed on the lower surface of the guide plate 301 and protruding downward. Multiple combinations of the notch and the positioning protrusion can be provided. Furthermore, the guide plate 301 is formed using a material with high thermal conductivity (e.g., stainless steel or other metallic materials).

[0144] Guide board 301 Figure 11 and Figure 12 As shown, a plurality of guide pins 310 serve as guides for positioning the measurement wafer 201 relative to the guide plate 301. Therefore, when the measurement wafer 201 is placed on the cooling plate 160 via the guide plate 301, the measurement wafer 201 is positioned relative to the cooling plate 160. Thus, when the measurement wafer 201 is transported above the hot plate 132 using the cooling plate 160, the measurement wafer 201 can be transported to the desired position. As a result, the measurement wafer 201 can be reliably placed at the desired position on the hot plate 132. That is, the measurement wafer 201 can be positioned relative to the hot plate 132 and placed on the hot plate 132. More specifically, the horizontal offset of the measurement wafer 201 from the desired position when placed on the hot plate 132 can be suppressed within a specified range.

[0145] However, sometimes a guide protrusion (not shown) is provided on the hot plate 132 to guide the wafer W to the desired position on the hot plate 132. By providing a guide pin 310 on the guide plate 301, when the measuring wafer 201 is placed on the hot plate 132, it is possible to prevent the measuring wafer 201 from getting stuck on the aforementioned guide protrusion.

[0146] Additionally, in guide plate 301, such as Figure 11 The diagram shows a plurality of through holes 311 extending through the thickness direction. A support pin 167 can be inserted into each through hole 311. When the guide plate 301 is placed on the cooling plate 160, the top of the support pin 167 extends from the upper surface of the guide plate 301 through the through holes 311. In this way, the plurality of support pins 167 extending from their tops support the measuring wafer 201.

[0147] In addition, the guide plate 301 can be positioned relative to the cooling plate 160 by engaging the through hole 311 with the support pin 167.

[0148] By using the guide plate 301 with the through hole 311, it is possible to prevent a decrease in the cooling efficiency of the measurement wafer 201 cooled by the cooling plate 160, and as... Figure 13 This reduces the amount of cable 204 sagging from the top of the support pin 167. If as shown... Figure 14 Without the guide plate 301, the aforementioned droop is large. Therefore, when the cooling plate 160 is moved, the portion of the cable 204 hanging from the top of the support pin 167 cannot reach upwards. As a result, a large force is exerted on the cable 204 from the support pin 167, potentially causing cable 204 to break. In contrast, if the guide plate 301 is used and the aforementioned droop is smaller, the portion of the cable 204 hanging from the top of the support pin 167 can reach upwards when the cooling plate 160 is moved. Therefore, a large force is not exerted on the cable 204 from the support pin 167, and the cable 204 will not break.

[0149] Furthermore, when the aforementioned droop is large, if the cooling plate 160 is moved to separate itself from the hot plate 132 while the measuring wafer 201 is supported by the lifting pin 141, the cable 204 may move along with the cooling plate 160, causing the measuring wafer 201 to move on the lifting pin 141. When the measuring wafer 201 moves in this way, it may be impossible to place it in the desired position on the hot plate 132. In contrast, when the aforementioned droop is small, if the cooling plate 160 is moved in the same manner while the measuring wafer 201 is supported by the lifting pin 141, the cable 204 will not move along with the cooling plate 160, and therefore, the measuring wafer 201 will not move on the lifting pin 141.

[0150] Furthermore, the guide plate 301 is so thin that the support pin 167 passes through it, thus the guide plate 301 has a low heat capacity. Therefore, the measurement wafer 201 can be efficiently cooled by the cooling plate 160 via the guide plate 301.

[0151] From the viewpoint of heat capacity, it is preferable that the guide plate 301 is thinner than the cooling plate 160. Specifically, it is preferable that the plate-shaped portion of the guide plate 301 is thinner than the plate-shaped portion of the cooling plate 160. This reduces the heat capacity of the guide plate 301. As a result, the measurement wafer 201 can be efficiently cooled from the cooling plate 160 via the guide plate 301.

[0152] In addition, such as Figure 11 As shown, multiple upward protrusions 312 can also be formed on the upper surface of the guide plate 301, and the measuring wafer 201 can be supported by these multiple protrusions 312.

[0153] By using multiple protrusions 312 to support the measuring wafer 201, or by using multiple support pins 167 extending from the upper surface of the guide plate 301 through through holes 311 to support the measuring wafer 201, the contact area between the guide plate 301 and the measuring wafer 201 can be reduced. Therefore, it is possible to prevent the measuring wafer 201, which is heated by the hot plate 132, from being rapidly cooled by the guide plate 301 and breaking.

[0154] Furthermore, the height of the protrusion 312 is set such that the sag of the cable 204 from the top of the protrusion 312 is smaller than the sag of the cable 204 from the support pin 167 when the guide plate 301 is not used. For example, the height of the protrusion 312 is set such that the top of the protrusion 312 is approximately the same height as the top of the support pin 167.

[0155] In addition, such as Figure 11 and Figure 12 As shown, a return member 314, serving as an anti-winding part, can also be provided at the end of the guide plate 301 on the heating area 122 side. The return member 314 has a slope 314a that is continuous from the upper surface of the guide plate 301 and extends obliquely downward from one end of the guide plate 301.

[0156] When the guide plate 301 with return element 314 is not used, such as Figure 15 As shown, when the cooling plate 160 is inserted between the measuring wafer 201 supported by the lifting pin 141 and the hot plate 132, the cable 204, which droops due to its own weight, sometimes gets caught between the cooling plate 160 and the hot plate 132. When it gets caught like this, other components such as the cable 204 and the temperature measuring device 300 may be damaged, or the housing 120 of the heat treatment apparatus 40 may become contaminated.

[0157] In this regard, if... Figure 16 As shown, using a guide plate 301 with a return element 314, when the cooling plate 160 is inserted between the measuring wafer 201 and the hot plate 132, even if the cable 204 hangs down (refer to the dotted line), it rises along the inclined plane 314a (refer to the solid line) as the cooling plate 160 is inserted. Therefore, the cable 204 will not be caught between the cooling plate 160 and the hot plate 132. Thus, damage to the temperature measuring device 300 and contamination inside the housing 120 of the heat treatment apparatus 40 caused by the cable 204 being caught can be prevented.

[0158] Furthermore, the return piece 314 is formed as follows: When the guide plate 301 is placed on the cooling plate 160, the lower end of the return piece 314 is positioned above the lower surface of the cooling plate 160. This prevents the return piece 314 from colliding with the hot plate 132 or the like when the cooling plate 160 moves towards the heating area. Moreover, when the guide plate 301 is placed on the cooling plate 160, the lower end of the return piece 314 is positioned below the upper surface of the cooling plate 160. This more reliably prevents the cable 204 from getting caught between the cooling plate 160 and the hot plate 132.

[0159] When using the guide plate 301, for example, the measurement wafer 201 is placed on the cooling plate 160 by placing the guide plate 301, which is in the state of carrying the measurement wafer 201, on the cooling plate 160.

[0160] Alternatively, the guide plate 301 may also be provided with a gripping part for the operator to hold. By providing the gripping part in this way, the operator can easily place the guide plate 301 from the wafer transport area D through the opening F1 and the feed in / outlet 121 onto the cooling plate 160.

[0161] It should be understood that the embodiments disclosed herein are illustrative and not restrictive in all respects. The above embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

Claims

1. A temperature measuring device, characterized in that, include: A measuring substrate, which is equipped with a temperature sensor; An information processing unit that acquires the detection results from the sensor; and The cable connecting the sensor to the information processing unit. The information processing unit is configured to be detachably installed in a mounting section opposite to the heating area where the heat plate is provided, separated by a cooling area. The cable is configured such that, when the information processing unit is mounted on the mounting section, the measuring substrate is placed on the heating plate by moving the cooling plate on which the measuring substrate is placed from the cooling area to the heating area, and the cable can follow the movement of the measuring substrate. The temperature measuring device also includes an intermediate component positioned relative to the cooling plate. The measuring substrate is placed on the cooling plate via the intermediate component. The intermediate component has a guide for positioning the measuring substrate relative to the intermediate component. The intermediate component has an anti-winding part that prevents the cable from being wound between the cooling plate on which the intermediate component is placed when the cooling plate is inserted between the measuring substrate located in the heating area and the hot plate.

2. The temperature measuring device as described in claim 1, characterized in that: The mounting portion extends in a direction orthogonal to the direction of movement of the cooling plate and supports a support member for a heat treatment apparatus having the heating zone and the cooling zone.

3. The temperature measuring device as described in claim 2, characterized in that: The supporting component is a partition wall surrounding the substrate transport area, having an opening for the substrate to pass through. The substrate transport area is equipped with a substrate transport device for transporting the substrate. The information processing unit is installed in the substrate transport area.

4. The temperature measuring device as described in claim 1, characterized in that: The intermediate component has multiple protrusions on its upper surface that support the measuring substrate.

5. The temperature measuring device as described in claim 1 or 4, characterized in that: The intermediate component has a through hole through which a support pin disposed on the upper surface of the cooling plate is inserted and extends from the upper surface of the intermediate component.

6. The temperature measuring device as described in claim 1 or 4, characterized in that: The intermediate component is thinner than the cooling plate.

7. A heat treatment apparatus for heat-treating a substrate, characterized in that: Includes a hot plate, a cooling plate, and a temperature measuring device. The temperature measuring device includes: A measuring substrate, which is equipped with a temperature sensor; An information processing unit that acquires the detection results from the sensor; The cable connecting the sensor to the information processing unit; and An intermediate component positioned relative to the cooling plate. The information processing unit is configured to be detachably installed in a mounting section opposite to the heating area where the heat plate is provided, separated by a cooling area. The cable is configured such that, when the information processing unit is mounted on the mounting section, the measuring substrate is placed on the heating plate by moving the cooling plate on which the measuring substrate is placed from the cooling area to the heating area, and the cable can follow the movement of the measuring substrate. The temperature measuring device further includes the measuring substrate being placed on the cooling plate via the intermediate component. The intermediate component has a guide for positioning the measuring substrate relative to the intermediate component. The intermediate component has an anti-winding part that prevents the cable from being wound between the cooling plate on which the intermediate component is placed when the cooling plate is inserted between the measuring substrate located in the heating area and the hot plate.

8. A temperature measurement method using a temperature measuring device, characterized in that: The temperature measuring device includes: A measurement substrate equipped with sensors; An information processing unit that acquires the detection results from the sensor; The cable connecting the sensor to the information processing unit; and An intermediate component positioned relative to a cooling plate. The intermediate component has a guide for positioning the measuring substrate relative to the intermediate component. The intermediate component has an anti-winding part. The temperature measurement method includes: The step of installing the information processing unit in the mounting section opposite the heating area where the hot plate is provided, separated by a cooling area; The step of placing the measuring substrate on a cooling plate located in the cooling region via the intermediate component; The steps of moving the measuring substrate to the heating area using the cooling plate and transferring it to the hot plate; and The step of detecting temperature using the sensor, When the cooling plate, on which the intermediate component is placed, is inserted between the measuring substrate located in the heating area and the hot plate, the anti-winding part prevents the cable from being wound between the cooling plate and the hot plate.

9. The temperature measurement method as described in claim 8, characterized in that, Also includes: The step of returning the measuring substrate to the cooling plate; and The step of cooling the measuring substrate using the cooling plate.

10. The temperature measurement method as described in claim 9, characterized in that, Also includes: The step of removing the measuring substrate from the cooling plate located in the cooling area after the measuring substrate has been cooled.

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