Substrate processing apparatus

Abstract

A substrate processing apparatus capable of detecting scattering of a processing liquid at an early stage is provided. The substrate processing apparatus includes a substrate holding and rotating section that holds a substrate and rotates the substrate, an air supply section that supplies air to the substrate held by the substrate holding and rotating section, a processing liquid supply section that supplies a processing liquid to the substrate held by the substrate holding and rotating section, and a rectifying member disposed between the air supply section and the substrate holding and rotating section, the rectifying member rectifying the air supplied from the air supply section, wherein the rectifying member includes a base material having a main surface facing the substrate held by the substrate holding and rotating section, a first conductive layer provided on the main surface, and a second conductive layer provided on the main surface, the second conductive layer being electrically insulated from the first conductive layer.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus. Background Technology

[0002] In substrate processing apparatuses, during wafer processing using liquids such as chemical solutions, splashing of the processing liquid sometimes occurs. As a device for detecting liquid leakage, a strip-type leakage sensor has been proposed.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-224880 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a substrate processing apparatus capable of detecting the spillage of processing liquid at an early stage.

[0008] Solution for solving the problem

[0009] One aspect of this disclosure relates to a substrate processing apparatus comprising: a substrate holding and rotating section that holds and rotates a substrate; an air supply section that supplies air to the substrate held in the substrate holding and rotating section; a processing liquid supply section that supplies processing liquid to the substrate held in the substrate holding and rotating section; and a rectifier disposed between the air supply section and the substrate holding and rotating section, the rectifier rectifying the air supplied from the air supply section, wherein the rectifier comprises: a substrate having a main surface facing the substrate held in the substrate holding and rotating section; a first conductive layer disposed on the main surface; and a second conductive layer disposed on the main surface, the second conductive layer being electrically insulated from the first conductive layer.

[0010] The effects of the invention

[0011] According to this disclosure, it is possible to detect the spread of the treatment liquid at an early stage. Attached Figure Description

[0012] Figure 1 This is a diagram showing the outline structure of the substrate processing system according to the embodiment.

[0013] Figure 2 This is a diagram showing the outline structure of the etching unit.

[0014] Figure 3 This is a diagram showing the outline structure of an example rectifier plate.

[0015] Figure 4This is a schematic diagram showing the relationship between the chamber and the first and second conductive layers.

[0016] Figure 5 It is Figure 4 A schematic diagram showing the main part of (a) in an enlarged view.

[0017] Figure 6 This is a flowchart illustrating the substrate processing procedure performed by the substrate processing system.

[0018] Figure 7 This is a schematic diagram showing the adhesion state of the liquid.

[0019] Figure 8 This is a graph showing the resistance corresponding to the adhesion state of the liquid.

[0020] Figure 9 This is a cross-sectional view showing the manufacturing method of the rectifier plate involved in the first example.

[0021] Figure 10 This is a diagram showing the outline structure of the rectifier plate involved in the second example.

[0022] Figure 11 This is a cross-sectional view showing the manufacturing method of the rectifier plate involved in the second example.

[0023] Figure 12 This is a diagram showing the outline structure of the rectifier plate involved in the third example.

[0024] Figure 13 This is a diagram showing the outline structure of the rectifier plate involved in the fourth example.

[0025] Figure 14 This is a schematic diagram showing the conductive layer disposed on the maintenance plate.

[0026] Figure 15 This is a schematic diagram showing the relationship between the chamber and the first and second conductive layers.

[0027] Figure 16 It is Figure 15 A schematic diagram showing the main part of (a) in an enlarged view.

[0028] Explanation of reference numerals in the attached figures

[0029] W: Wafer; 9: Liquid; 20: Chamber; 22: Sidewall; 23: Protective plate; 60, 160, 260, 360, 460: Rectifier plate; 61: Substrate; 62: Lower surface; 63, 64, 263, 264, 266, 363, 364, 463, 464, 563, 564: Conductive layer; 65, 365, 465, 565: Gap; 68: Optical sensor; 78, 578: Resistance measuring device; 265: Slot. Detailed Implementation

[0030] The embodiments of this disclosure will now be described with reference to the accompanying drawings. In the drawings, sometimes the same or corresponding structures are labeled with the same or corresponding symbols and the description is omitted.

[0031] <Structure of the substrate processing system>

[0032] First, the structure of the substrate processing system involved in the implementation method will be described. Figure 1 This is a diagram showing the outline structure of the substrate processing system according to the embodiment. In the following, to clarify the positional relationships, the X-axis, Y-axis, and Z-axis are defined as mutually orthogonal, and the positive direction of the Z-axis is set as the vertically upward direction.

[0033] like Figure 1 As shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

[0034] The loading / unloading station 2 includes a carrier placement section 11 and a conveying section 12. The carrier placement section 11 holds multiple carriers C that hold multiple wafers W in a horizontal position.

[0035] The transport section 12 is disposed adjacent to the carrier placement section 11, and the transport section 12 includes a substrate transport device 13 and a transfer section 14 inside. The substrate transport device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 13 can move in the horizontal and vertical directions and rotate about the vertical axis, and uses the wafer holding mechanism to transport the wafer W between the carrier C and the transfer section 14.

[0036] Processing station 3 is arranged adjacent to conveying section 12. Processing station 3 includes conveying section 15 and multiple etching units 16. Multiple etching units 16 are arranged on both sides of conveying section 15. Furthermore, the number of etching units 16 is not limited to [specific number missing]. Figure 1 The example shown.

[0037] The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 17 can move in the horizontal and vertical directions and rotate about the vertical axis, and uses the wafer holding mechanism to transfer the wafer W between the transfer unit 14 and the etching unit 16.

[0038] The etching unit 16 performs a prescribed substrate treatment on the wafer W transported by the substrate transport device 17.

[0039] In addition, the substrate processing system 1 includes a control device 4. The control device 4 includes a control unit 18 and a storage unit 19.

[0040] The control unit 18 includes, for example, a microcomputer with a CPU (Central Processing Unit), ROM (Read-Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The CPU of the control unit 18 uses the RAM as its working area to execute programs stored in the ROM, thereby controlling the operation of the board processing system 1.

[0041] Furthermore, the aforementioned program can also be recorded on a computer-readable recording medium and installed from that recording medium into the storage unit 19 of the control device 4. Examples of computer-readable recording media include hard disks (HD), floppy disks (FD), compact optical discs (CD), magneto-optical discs (MO), and memory cards.

[0042] The storage unit 19 is implemented, for example, by semiconductor storage elements such as RAM and flash memory, or storage devices such as hard disks and optical disks.

[0043] <Structure of the Etching Unit>

[0044] Next, the structure of the etching unit 16 will be described. Figure 2 This is a diagram showing the outline structure of the etching unit 16.

[0045] like Figure 2 As shown, the etching unit 16 includes a chamber 20, a substrate holding mechanism 30, a supply section 40, and a recovery cup 50.

[0046] The chamber 20 houses the substrate holding mechanism 30, the supply section 40, and the recovery cup 50. For example, the chamber 20 is grounded. A fan filter unit (FFU) 21 is provided at the top of the chamber 20. The FFU 21 creates a downward airflow within the chamber 20. The chamber 20 is an example of a housing, and the FFU 21 is an example of an air supply section.

[0047] The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The wafer W is held in the holding portion 31 with the surface on which the film to be etched is formed facing upward.

[0048] In this embodiment, the holding part 31 has a plurality of gripping parts 31a. The wafer W is held by gripping the periphery of the wafer W using the plurality of gripping parts 31a. However, it is not limited to this. The holding part 31 may also be a vacuum chuck or the like that adsorbs and holds the wafer W.

[0049] The support portion 32 is a member extending in the vertical direction. Its base end is supported by the drive portion 33 in a rotatable manner, and the holding portion 31 is horizontally supported at the top end of the support portion 32. The drive portion 33 rotates the support portion 32 about the vertical axis. The substrate holding mechanism 30 rotates the holding portion 31 supported on the support portion 32 by rotating the support portion 32 using the drive portion 33, thereby rotating the wafer W held in the holding portion 31.

[0050] A supply unit 40 is positioned above the wafer W held by the holding unit 31. One end of the supply unit 40 is connected to a supply path 41, and the other end of the supply path 41 is connected to a processing liquid supply source 42. A flow regulating valve 43 is inserted and installed in the middle of the supply path 41, which can open and close the supply path 41 and regulate the supply flow rate of the processing liquid. Therefore, when the flow regulating valve 43 is opened, processing liquid is supplied from the supply unit 40 to the wafer W held in the holding unit 31. Thus, processing liquid is supplied to the wafer W. Examples of processing liquids include pure water (DIW), an aqueous solution of NH4OH (ammonium hydroxide) and H2O2 (hydrogen peroxide) (SC1 solution), dilute hydrofluoric acid (DHF), isopropanol (IPA), etc. Figure 2 The diagram shows a set of supply unit 40, supply path 41, supply source 42, and flow regulating valve 43, but for each type of processing liquid, a set including supply unit 40, supply path 41, supply source 42, and flow regulating valve 43 is provided. The processing liquid can also be supplied from the rotation center of the holding unit 31 to the center of the back side of the wafer W. For example, a structure corresponding to supply unit 40, supply path 41, supply source 42, and flow regulating valve 43 can be provided on the back side of the wafer W.

[0051] The recovery cup 50 is configured to surround the holding portion 31 and is used to collect the processing liquid that splashes off from the wafer W due to the rotation of the holding portion 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the etching unit 16. In addition, an exhaust port 52 is formed at the bottom of the recovery cup 50, which is used to discharge the gas supplied from the FFU 21 to the outside of the etching unit 16.

[0052] A rectifier plate 60 is disposed inside the chamber 20 and below the FFU 21. The rectifier plate 60 is an example of a rectifier component.

[0053] <Structure of the rectifier plate>

[0054] Next, the structure of the rectifier plate 60 will be explained. Figure 3 This is a diagram showing a schematic structure of an example of a rectifier plate 60. Figure 3 (a) is a bottom view. Figure 3 (b) is a cross-sectional view.

[0055] like Figure 3 As shown, the first example of the rectifier plate 60 includes a plate-shaped substrate 61, a first conductive layer 63, and a second conductive layer 64. For example, the substrate 61 is made of an insulating material. The material of the substrate 61 may be, for example, a resin such as polyvinyl chloride (PVC), polypropylene (PP), polytetrafluoroethylene (PTFE), or polychlorotrifluoroethylene (PCTFE). The first conductive layer 63 and the second conductive layer 64 are disposed on the lower surface 62 of the substrate 61. The substrate 61 has a rectangular planar shape, with two sides parallel to the X-axis and two sides parallel to the Y-axis. The first conductive layer 63 and the second conductive layer 64 are disposed near the center of the substrate 61 in the X-axis direction, extending along the Y-axis, with a gap 65 between the first conductive layer 63 and the second conductive layer 64. The gap 65 is, for example, located vertically above the support portion 32. The first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other. The width of the gap 65 is, for example, 2 mm or more and 20 mm or less. The first conductive layer 63 and the second conductive layer 64 are made of conductive materials. When a conductive liquid is attached to the gap 65 in contact with the first conductive layer 63 and the second conductive layer 64, the first conductive layer 63 and the second conductive layer 64 are electrically connected to each other. That is, the gap 65 functions as a switch that toggles between on and off states. Preferably, the first conductive layer 63 and the second conductive layer 64 are resistant to corrosion by the processing liquid. Examples of conductive materials include precious metals such as gold and platinum. Examples of conductive materials include tin oxide, antimony tin oxide (ATO), and indium tin oxide. A plurality of through holes 69 are formed in the rectifier plate 160. The through holes 69 penetrate the first conductive layer 63 and the second conductive layer 64. The thickness of the first conductive layer 63 and the second conductive layer 64 is, for example, 0.1 μm or more. The thickness of the first conductive layer 63 and the second conductive layer 64 may also be 0.1 μm or more and 0.3 μm or less. The sheet resistance of the first conductive layer 63 and the second conductive layer 64 is, for example, 10. 5 Ω / sq~10 11 Approximately Ω / sq. The diameter of the through hole 69 is, for example, approximately 3mm to 5mm. The lower surface 62 is an example of a main surface.

[0056] The rectifier plate 60 is, for example, fixed to a maintenance plate provided in the chamber 20. Figure 4 This is a schematic diagram showing the relationship between the chamber 20 and the first conductive layer 63 and the second conductive layer 64. Figure 4 (a) shows the structure of the maintenance panel when viewed from the front. Figure 4 (b) shows the structure of the maintenance panel when viewed from the side. Figure 5 It is Figure 4 A schematic diagram showing the main part of (a) in an enlarged view.

[0057] like Figure 4 and Figure 5 As shown, a maintenance plate 23 is provided on the side wall 22 of the chamber 20 opposite to the gate 24 of the wafer W's loading / unloading outlet. The maintenance plate 23 is opened when performing maintenance on the interior of the chamber 20.

[0058] A conductive clamp 71 is mounted on the rectifier plate 60 in contact with the first conductive layer 63 on the lower surface 62 side. The clamp 71 clamps the rectifier plate 60 in the Z-axis direction. The clamp 71 contains, for example, conductive resin. The clamp 71 is secured to the maintenance plate 23 by a bolt 72 inserted from the outside of the maintenance plate 23 and a nut 73 fitted to the front end of the bolt 72. That is, the clamp 71 has an opening between one end of the clamp 71 that contacts the upper surface of the rectifier plate 60 and the other end that contacts the lower surface of the rectifier plate 60, the front end of the bolt 72 passes through the opening, and the nut 73 is fitted on the part that passes through. The bolt 72 and the nut 73 are conductive. The bolt 72 and the nut 73 contain, for example, conductive resin. On the outside of the maintenance plate 23, a circular pressing terminal 74 connected to one end of a cable 75 is mounted between the head of the bolt 72 and the maintenance plate 23. Therefore, the first conductive layer 63 is electrically connected to the cable 75 via the clamp 71, the bolt 72 and the round pressing terminal 74.

[0059] Similar to clamp 71, a conductive clamp (not shown) is mounted on the rectifier plate 60 in such a way that it contacts the second conductive layer 64 on the lower surface 62 side. This clamp is also secured to the maintenance plate 23 by conductive bolts and nuts (not shown), and a circular snap-on terminal 76, which connects to one end of the cable 77, is installed between the bolts and the maintenance plate 23. Thus, the second conductive layer 64 is connected to the cable 77 via the clamp, bolts, and the circular snap-on terminal 76.

[0060] A resistance meter 78 is connected between the other end of cable 75 and the other end of cable 77. The resistance meter 78 primarily measures the resistance of a circuit comprising: the metal portion from cable 75 to the first conductive layer 63; the metal portion from cable 77 to the second conductive layer 64; and the switch (gap 65) between the first conductive layer 63 and the second conductive layer 64. When the first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other, the resistance value measured by the resistance meter 78 is essentially the resistance value of the insulating substrate 61. When a conductive liquid adheres to the gap 65 in contact with both the first conductive layer 63 and the second conductive layer 64, the resistance value measured by the resistance meter 78 decreases. For example, the measurement result obtained by the resistance meter 78 is sent to a control device 4, which controls the substrate processing system 1 based on the measurement result.

[0061] The circular pressing terminals 74 and 76, bolt 72, and the bolt connected to the circular pressing terminal 76 are covered by an insulating electrode cover 25. This is to suppress resistance changes caused by the adhesion of foreign matter from the outside of the chamber 20.

[0062] The rectifier plate 60 can also be fixed to the side wall 22 of the chamber 20 by the same mechanism used for fixing to the maintenance plate 23.

[0063] <Specific Operations of the Substrate Processing System>

[0064] Next, the specific operation of the substrate processing system 1 will be explained. Figure 6 This is a flowchart illustrating the substrate processing process performed by the substrate processing system 1. Each device included in the substrate processing system 1 performs operations under the control of the control unit 18. Figure 6 The processing steps shown are as follows.

[0065] like Figure 6 As shown, in the substrate processing system 1, the process of transferring the wafer W into the etching unit 16 is first performed (step S101). Specifically, the substrate transfer device 13 of the transfer station 2 removes the wafer W from the carrier C placed on the carrier placement section 11 and places the removed wafer W on the transfer section 14. The substrate transfer device 17 of the processing station 3 removes the wafer W placed on the transfer section 14 from the transfer section 14 and transfers it into the etching unit 16. The wafer W transferred into the etching unit 16 is held by the holding section 31 of the etching unit 16.

[0066] Next, an etching process is performed in the substrate processing system 1 (step S102). During the etching process, while the holding portion 31 holding the wafer W is rotated by the drive portion 33, an etching solution is supplied from the supply portion 40 to the wafer W held in the holding portion 31. In addition, while the holding portion 31 holding the wafer W is rotated by the drive portion 33, a rinsing solution is supplied from the supply portion 40 to the wafer W held in the holding portion 31.

[0067] Next, a drying process is performed in the substrate processing system 1 (step S103). During the drying process, the wafer W continues to rotate, and the rinsing solution is stopped. As a result, the residual solution on the wafer W is removed, and the wafer W is dried.

[0068] Next, a removal process is performed in the substrate processing system 1 (step S104). In the removal process, the dried wafer W is removed from the etching unit 16 and placed in the transfer section 14 by the substrate transfer device 17. Then, the processed wafer W placed in the transfer section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transfer device 13. Thus, the series of substrate processing for one wafer W is completed.

[0069] During this series of substrate processing steps, FFU 221 creates a downward airflow within chamber 20. The rectifier plate 60 functions as a buffer to generate a positive pressure state for the downward airflow created by FFU 21, thus adjusting the flow rate of the downward airflow.

[0070] <The function of the rectifier plate>

[0071] During the etching process (step S102), the processing liquid supplied from the supply unit 40 and the processing liquid supplied to the back side of the wafer W sometimes splatters. For example, splattering can occur when the wafer W breaks while rotating, or when the holding unit 31a fails to hold the wafer W firmly enough and the wafer W spins idly. Furthermore, the processing steps used to process the wafer W can also easily cause splattering. When such splattering occurs, processing liquid will reach areas within the chamber 20 that would not be reached without splattering, requiring cleaning of the chamber 20. In particular, if the wafer W breaks while processing liquid is being supplied to the back side, the processing liquid will spread like a fountain within the chamber 20, increasing recovery time. In cases where the wafer W spins idly, the yield of semiconductor devices manufactured from the wafer W may decrease.

[0072] In this embodiment, a first conductive layer 63 and a second conductive layer 64 are provided on the rectifier plate 160. When a conductive liquid is attached to the gap 65 between the first conductive layer 63 and the second conductive layer 64 in a manner that contacts the first conductive layer 63 and the second conductive layer 64, the first conductive layer 63 and the second conductive layer 64 are electrically connected to each other. Figure 7 This is a schematic diagram illustrating the adhesion state of the liquid. Figure 8 This is a graph showing the resistance corresponding to the adhesion state of the liquid. Figure 7 (a) shows the state S0 in which no liquid adheres to the gap 65. Figure 7 (b) shows a state S1 in which liquid is attached in the gap 65 and at a location near the maintenance plate 23 of the rectifier plate 160. Figure 7 (c) shows the state S2 where liquid is attached at the location of the maintenance plate 23 in the gap 65 and away from the rectifier plate 160.

[0073] The state S0 in which no liquid adheres to the gap 65 ( Figure 7 Under (a)), the first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other. Therefore, as Figure 8 As shown, the resistance value R0 measured by the resistance measuring device 78 in state S0 is essentially equal to the total resistance value R of the metal parts included in the circuit. MThe resistance value R of the insulating portion of the substrate 61 I The sum of the resistance values ​​R I With the total resistance value R M This is an extremely high value. Therefore, the resistance value R0 is essentially equal to the resistance value R. I .

[0074] State S1: When a conductive liquid 9 is attached in the gap 65 and near the maintenance plate 23 of the rectifier plate 160 in a manner that contacts the first conductive layer 63 and the second conductive layer 64, the conductive liquid 9 is present. Figure 7 Under (b) conditions, the first conductive layer 63 and the second conductive layer 64 are electrically connected to each other. Therefore, as Figure 8 As shown, in state S1, the resistance value R1 measured by the resistance measuring device 78 is essentially equal to the total resistance value R of the metal parts included in the circuit. M The resistance value R of liquid 9 L sum.

[0075] State S2 when liquid 9 is attached at the location of the maintenance plate 23 in the gap 65 and away from the rectifier plate 160. Figure 7 Under (c) conditions, the first conductive layer 63 and the second conductive layer 64 are electrically connected to each other. Therefore, as Figure 8 As shown, in state S2, the resistance value R2 measured by the resistance measuring device 78 is essentially equal to the total resistance value R of the metal parts included in the circuit. M The resistance value R of liquid 9 L sum.

[0076] When comparing state S1 with state S2, in state S1, the current path between the first conductive layer 63 and the second conductive layer 64 is shorter, and the circuit includes fewer metal components, compared to state S2. Therefore, in state S1, the total resistance R is lower than that in state S2. M Smaller. Therefore, it is preferable to pre-set the detection window A in a manner that includes the following resistance values: the resistance value measured by the resistance measuring device 78 when the liquid 9 adheres to the portion of the gap 65 closest to the maintenance plate 23; and the resistance value measured by the resistance measuring device 78 when the liquid 9 adheres to the portion of the gap 65 farthest from the maintenance plate 23. By setting the detection window A in this way, it can be determined that liquid 9 is adhered in the gap 65 when the resistance value measured by the resistance measuring device 78 falls within the range of the detection window A. Furthermore, in state S0, the first conductive layer 63 and the second conductive layer 64 are substantially not included in the current path, therefore the total resistance value R M It is smaller than the total resistance value in state S1.

[0077] Under normal conditions where no spillage of the treatment fluid occurs, the treatment fluid will not adhere to the rectifier plate 160. That is, if no spillage of the treatment fluid occurs, the rectifier plate 160 remains in state S0. Therefore, the measurement result (resistance value) of the resistance meter 78 will not enter the detection window A, and the control device 4, which receives the measurement result, determines that no spillage of the treatment fluid has occurred.

[0078] Conversely, when liquid spillage occurs, a portion of the liquid tends to adhere to the gap 65 as liquid 9. Furthermore, when liquid 9 adheres to the gap 65 and the resistance value measured by the resistance meter 78 enters the detection window A, the control device 4, receiving this measurement result, determines that liquid spillage has occurred. The control device 4 can stop the etching process based on this determination (step S102). Alternatively, the occurrence of spillage can be announced via a display device, speaker, or the like. The control device 4 can estimate the location of the adhered liquid 9 based on the resistance value.

[0079] According to this embodiment, the scattering of the treatment liquid can be detected quickly, and the contamination caused by the scattering of the treatment liquid inside the chamber 20 can be suppressed.

[0080] With the first conductive layer 63 and the second conductive layer 64 being resistant to the processing liquid, even if the rectifier plate 160 is covered with processing liquid, the rectifier plate 160 can be removed from the maintenance plate 23, the processing liquid on the rectifier plate 160 can be wiped off, and the rectifier plate 160 can be dried, thereby reusing the rectifier plate 160. Such maintenance can be performed easily in a short time. Therefore, even if the processing liquid spills, the substrate processing system 1 can be restored quickly with a short downtime.

[0081] Furthermore, while belt-type leak sensors can also be used to detect leaks of the processing fluid, they cannot be detected unless a large amount of processing fluid adheres to the surface, unlike in this embodiment. Therefore, early detection of processing fluid spillage is impossible. Additionally, the belt-type leak sensor cannot be reused unless the non-woven fabric or similar material soaked in the liquid is dried.

[0082] Furthermore, if the substrate 61 is made of a material such as polyvinyl chloride (PVC) that allows visible light to pass through, an optical sensor 68 can be installed above the rectifier 60 (see reference). Figure 2 The presence or absence of wafer W is detected by an optical sensor 68.

[0083] Furthermore, the through holes 69 do not need to be formed at a fixed density; the rectifier plate 60 can also contain regions with a high density of through holes 69 and regions with a low density of through holes 69. Additionally, the diameter of the through holes 69 can be variable. The air supply distribution and flow rate can be adjusted by changing the density and diameter of the through holes 69.

[0084] In the rectifier plate 160, the first conductive layer 63 is formed on one side of the gap 65 in the positive X-axis direction, extending along the Y-axis direction. However, the first conductive layer 63 may also be formed to cover the entire lower surface 62 of the gap 65 in the positive X-axis direction. Similarly, the first conductive layer 63 may also be formed to cover the entire lower surface 62 of the gap 65 in the negative X-axis direction.

[0085] <Manufacturing Method of Rectifier Plate>

[0086] Next, regarding Figure 3 The manufacturing method of the rectifier plate 160 involved in the first example shown will be described. Figure 9 This is a cross-sectional view showing the manufacturing method of the rectifier plate 160 involved in the first example.

[0087] First, such as Figure 9 As shown in (a), a substrate 61 is prepared, and a first conductive layer 63 and a second conductive layer 64 are formed on the lower surface 62 of the substrate 61 such that a gap 65 is provided between the first conductive layer 63 and the second conductive layer 64. During the formation of the first conductive layer 63 and the second conductive layer 64, for example, a paste containing particles of the material constituting the first conductive layer 63 and the second conductive layer 64 is applied, and the paste is calcined. The application of the paste can be performed, for example, by screen printing. Next, as... Figure 9 As shown in (b), a plurality of through holes 69 are formed in the composite of the substrate 61, the first conductive layer 63, and the second conductive layer 64. The through holes 69 can be formed, for example, by machining. Preferably, burrs generated during the formation of the through holes 69 are removed after the through holes 69 are formed.

[0088] In this way, it is possible to manufacture Figure 3 The rectifier plate 160 is shown.

[0089] <Structure of another example of a rectifier plate (second example)>

[0090] Next, the structure of another example (the second example) of the rectifier plate 60 will be described. Figure 10 This is a diagram showing the outline structure of the rectifier plate involved in the second example.

[0091] like Figure 10As shown, the second example of the rectifier plate 60 includes a rectifier plate 260 comprising a substrate 61 and a conductive layer 266. A groove 265 is formed in both the conductive layer 266 and the substrate 61. The groove 265 divides the conductive layer 266 in two, with one part being a first conductive layer 63 and the other part being a second conductive layer 64. Similar to the rectifier plate 160 in the first example, the first conductive layer 63 and the second conductive layer 64 are electrically insulated from each other. The groove 265, for example, has a tapered shape whose width narrows as it approaches the upper vertical surface of the conductive layer 266, starting from the surface below the vertical surface. The maximum width of the groove 265 is, for example, 2 mm or more and 20 mm or less. Other structures are the same as in the first example.

[0092] <Manufacturing Method of the Second Example of a Rectifier Plate>

[0093] Next, the manufacturing method of the rectifier plate 260 involved in the second example will be described. Figure 11 This is a cross-sectional view showing the manufacturing method of the rectifier plate 260 involved in the second example.

[0094] In the manufacturing method of the rectifier plate 260 involved in the second example, firstly, as Figure 11 As shown in (a), a substrate 61 is prepared, and a conductive layer 266 is formed on the lower surface 62 of the substrate 61. During the formation of the conductive layer 266, for example, a paste containing particles of the material constituting the conductive layer 266 is coated, and the paste is calcined. The coating of the paste can be performed, for example, by screen printing. Next, as... Figure 11 As shown in (b), a groove 265 dividing the conductive layer 266 into two is formed in the conductive layer 266 and the substrate 61. This forms the first conductive layer 63 and the second conductive layer 64. Subsequently, a plurality of through holes 69 are formed in the composite of the substrate 61, the first conductive layer 63, and the second conductive layer 64. The through holes 69 can be formed, for example, by machining. Preferably, burrs generated during the formation of the through holes 69 are removed after their formation.

[0095] <Structure of other examples of rectifier plates (the third and fourth examples)>

[0096] Next, the structures of some other examples (the third and fourth examples) of the rectifier plate 60 will be described. Figure 12 This is a diagram showing the outline structure of the rectifier plate involved in the third example. Figure 13 This is a diagram showing the outline structure of the rectifier plate involved in the fourth example.

[0097] like Figure 12As shown, the rectifier plate 360 ​​of the third example of the rectifier plate 60 includes a substrate 61, a first conductive layer 363, and a second conductive layer 364. The first conductive layer 363 and the second conductive layer 364 can be made of the same material as the first conductive layer 63 and the second conductive layer 64. The first conductive layer 363 and the second conductive layer 364 are provided in a comb-like manner on almost the entire lower surface 62 of the substrate 61. The first conductive layer 363 includes a connecting portion 363A extending along the X-axis direction and a plurality of teeth 363B extending from the connecting portion 363A along the negative Y-axis direction. The connecting portion 363A and each tooth 363B are connected to each other. The second conductive layer 364 includes: a connecting portion 364A, which is located further along the negative Y-axis direction than the front end of the plurality of teeth 363B on the negative Y-axis direction side, and the connecting portion 364A extends along the X-axis direction; and a plurality of teeth 364B, which extend from the connecting portion 364A along the positive Y-axis direction. The connecting portion 364A and each tooth 364B are connected to each other. The teeth 363B and teeth 364B are alternately arranged in the X-axis direction. A gap 365 exists between adjacent teeth 363B and teeth 364B in the X-axis direction, between adjacent connecting portions 363A and teeth 364B in the Y-axis direction, and between adjacent connecting portions 364A and teeth 363B in the Y-axis direction. The first conductive layer 363 and the second conductive layer 364 are electrically insulated from each other. The width of the gap 365 is, for example, 2 mm or more and 20 mm or less. Gap 365 functions as a switch, just like gap 65. Although not shown in the diagram, rectifier plate 360 ​​also has multiple through holes 69, just like rectifier plate 160.

[0098] like Figure 13 As shown, the fourth example of the rectifier plate 60 includes a rectifier plate 460 comprising a substrate 61, a first conductive layer 463, and a second conductive layer 464. The first conductive layer 463 and the second conductive layer 464 can be made of the same material as the first conductive layer 63 and the second conductive layer 64. The first conductive layer 463 and the second conductive layer 464 are arranged in a spiral pattern on almost the entire lower surface 62 of the substrate 61. A portion of the first conductive layer 463 and a portion of the second conductive layer 464 are alternately arranged from the center of the lower surface 62 outwards. A gap 465 exists between the first conductive layer 463 and the second conductive layer 464. The first conductive layer 463 and the second conductive layer 464 are electrically insulated from each other. The width of the gap 465 is, for example, 2 mm or more and 20 mm or less. The gap 465 functions as a switch, just like the gap 65. Although not shown in the figure, the rectifier plate 460 also has a plurality of through holes 69 formed, similar to the rectifier plate 160.

[0099] Compared to rectifier plate 160, gaps 365 are formed over a large area in rectifier plate 360 ​​in the third example and rectifier plate 460 in the fourth example, making it easier to detect the spread of the processing fluid.

[0100] <Other structures for detecting the dispersion of treatment fluid>

[0101] Next, other structures for detecting the scattering of the processing fluid will be described. When the wafer W breaks while processing fluid is being supplied from below to the back of the wafer W, the processing fluid tends to scatter vertically upwards. However, the scattering of the processing fluid is not limited to this; scattering of the processing fluid due to idling of the wafer W, etc., tends to occur horizontally rather than vertically upwards. Therefore, it is preferable that the same structure as the first conductive layer 63 and the second conductive layer 64 is also provided on the inner surface of the side wall 22 of the chamber 20. For example, it is preferable that two conductive layers that are insulated from each other are provided on the inner surface of the protective plate 23. Figure 14 This is a schematic diagram showing the conductive layer disposed on the maintenance plate 23.

[0102] exist Figure 14 In the example shown, a first conductive layer 563 and a second conductive layer 564 are provided on the inner surface of the maintenance plate 23. The first conductive layer 563 and the second conductive layer 564 can be made of the same material as the first conductive layer 63 and the second conductive layer 64. Similar to the first conductive layer 363 and the second conductive layer 364 in the third example, the first conductive layer 563 and the second conductive layer 564 are provided on the inner surface of the maintenance plate 23 in a comb-like pattern. The first conductive layer 563 and the second conductive layer 564 are electrically insulated from each other, and a gap 565 exists between the first conductive layer 563 and the second conductive layer 564. The width of the gap 565 is, for example, 1 mm or more and 20 mm or less.

[0103] The first conductive layer 563 and the second conductive layer 564 are connected to external cables using bolts or the like, for example, the same as the first conductive layer 63 and the second conductive layer 64. Figure 15 This is a schematic diagram showing the relationship between the chamber 20 and the first conductive layer 563 and the second conductive layer 564. Figure 15 (a) shows the structure of the maintenance panel when viewed from the front. Figure 15 (b) shows the structure of the maintenance panel when viewed from the side. Figure 16 It is Figure 15 A schematic diagram showing the main part of (a) in an enlarged view.

[0104] A bolt 572 is inserted into the outer side of the protective plate 23, and a nut 573 is fitted onto the front end of the bolt 572. The bolt 572 and nut 573 are arranged to contact the first conductive layer 563. The bolt 572 and nut 573 are conductive. The bolt 572 and nut 573 may contain, for example, conductive resin. On the outer side of the protective plate 23, a circular snap-on terminal 574, connected to one end of the cable 575, is installed between the head of the bolt 572 and the protective plate 23. Therefore, the first conductive layer 563 is electrically connected to the cable 575 via the nut 573, the bolt 572, and the circular snap-on terminal 574.

[0105] Similarly, conductive bolts and nuts (not shown) are arranged in contact with the second conductive layer 564, and a circular snap-on terminal 576 connected to one end of the cable 577 is installed between the bolt and the protective plate 23. Thus, the second conductive layer 564 is connected to the cable 577 via the nut, bolt, and circular snap-on terminal 576.

[0106] A resistance meter 578 is connected between the other end of cable 575 and the other end of cable 577. The resistance meter 578 primarily measures the resistance of a circuit comprising: the metal portion from cable 575 to the first conductive layer 563; the metal portion from cable 577 to the second conductive layer 564; and the switch (gap 565) between the first conductive layer 563 and the second conductive layer 564. When the first conductive layer 563 and the second conductive layer 564 are electrically insulated from each other, the resistance value measured by the resistance meter 578 is essentially the resistance value of the insulating protective plate 23. When a conductive liquid adheres to the gap 565 in contact with the first conductive layer 563 and the second conductive layer 564, the resistance value measured by the resistance meter 578 decreases. For example, the measurement result of the resistance meter 578 is sent to the control device 4, which controls the substrate processing system 1 based on the measurement result.

[0107] The circular pressing terminals 574 and 576, bolt 572, and the bolt connected to the circular pressing terminal 576 are covered by an insulating electrode cover 525. This is to suppress resistance changes caused by the adhesion of foreign matter from the outside of the chamber 20. The electrode cover 525 and the electrode cover 25 can also be integrally formed into a single electrode cover.

[0108] In this maintenance plate 23, gaps 565 and 65 also function as switches, capable of detecting the presence of treatment fluid on the maintenance plate 23.

[0109] Alternatively, the structure for detecting the processing liquid splashing horizontally from wafer W may be provided not only on the maintenance plate 23, but also on any one or more of the sidewalls 22 located in the other three directions observed from wafer W. For example, a first conductive layer 563 and a second conductive layer 564 may be provided on the inner surface of the inlet / outlet gate 24. The first conductive layer 563 and the second conductive layer 564 do not need to be directly provided on the inner surface of the sidewall 22; they may be formed on an insulating substrate, as in the rectifier plate 60, and the substrate may be mounted on the inner surface of the sidewall 22.

[0110] Furthermore, a first conductive layer and a second conductive layer can be provided at the bottom of the chamber 20 to detect the spillage of the treatment liquid.

[0111] Furthermore, although the width of the gap does not need to be fixed, it is preferable that the width of the widest part is 20 mm or less, more preferably 10 mm or less, and even more preferably 5 mm or less. This is because the wider the gap, the more difficult it is for the first conductive layer and the second conductive layer to conduct electricity when liquid is attached to the gap, and it is difficult to detect the attachment of liquid in the early stage when the distance between the first conductive layer and the second conductive layer exceeds 20 mm.

[0112] The preferred embodiments have been described in detail above, but the embodiments are not limited to those described above. Various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

Claims

1. A substrate processing apparatus comprising: A substrate holding and rotating part holds the substrate and rotates the substrate. An air supply unit supplies air to the substrate held in the substrate holding rotation unit; A processing liquid supply unit supplies processing liquid to the substrate held in the substrate holding and rotating unit; as well as A rectifier is disposed between the air supply section and the substrate retaining rotation section, and the rectifier rectifies the air supplied from the air supply section. The rectifier component has the following features: A substrate having a main surface facing the substrate held in the substrate holding rotation portion; A first conductive layer, disposed on the main surface; and A second conductive layer is disposed on the main surface, and the second conductive layer is electrically insulated from the first conductive layer.

2. The substrate processing apparatus according to claim 1, wherein, The processing liquid supply unit supplies the processing liquid to the substrate from the vertical direction of the substrate held in the substrate holding rotation unit.

3. The substrate processing apparatus according to claim 1 or 2, wherein, It also has a first detection unit that detects the electrical conductivity between the first conductive layer and the second conductive layer.

4. The substrate processing apparatus according to claim 3, wherein, The first detection unit includes a first resistance measuring device, which is used to measure the resistance between the first conductive layer and the second conductive layer.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein, The distance between the first conductive layer and the second conductive layer is less than 20 mm.

6. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The thickness of the first conductive layer and the second conductive layer is 0.1 μm or more.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein, The first conductive layer and the second conductive layer are arranged in a comb-like pattern on the main surface.

8. The substrate processing apparatus according to any one of claims 1 to 6, wherein, The first conductive layer and the second conductive layer are arranged in a vortex pattern on the main surface.

9. The substrate processing apparatus according to any one of claims 1 to 8, wherein, It also has a housing for housing the rectifier component. The substrate processing apparatus further comprises: A third conductive layer is disposed on the inner surface of the side wall of the housing; as well as A fourth conductive layer is disposed on the inner surface, and the fourth conductive layer is electrically insulated from the third conductive layer.

10. The substrate processing apparatus according to claim 9, wherein, It also has a second detection unit, which detects the electrical conductivity between the third conductive layer and the fourth conductive layer.

11. The substrate processing apparatus according to claim 10, wherein, The second detection unit includes a second resistance meter, which is used to measure the resistance between the third conductive layer and the fourth conductive layer.

12. The substrate processing apparatus according to any one of claims 9 to 11, wherein, The distance between the third conductive layer and the fourth conductive layer is less than 20 mm.

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