Display device

Abstract

A display device is provided, the display device including: first to third light emitting devices each including a first color emission layer and located over a substrate; a second color quantum dot layer located over the second light emitting device; a third color quantum dot layer located over the third light emitting device; and a low refractive index layer located over the second color quantum dot layer and the third color quantum dot layer to correspond to the first to third light emitting devices, and including a matrix portion and a plurality of particles in the matrix portion, wherein a first portion of the matrix portion distal to the first to third light emitting devices includes fluorine.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0101399, filed on August 12, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0002] One or more embodiments relate to a display device, and more specifically, to a display device having high luminous efficiency and a simplified structure. Background Technology

[0003] The display device includes multiple pixels. In the case of a full-color display device, the multiple pixels can emit light of different colors. For this purpose, at least some pixels of the display device may include color conversion units. Thus, light of a first color generated by the light emitters of some pixels is converted into light of a second color as it passes through the corresponding color conversion unit and is transmitted to the outside. Summary of the Invention

[0004] The problem with existing display devices is that their structure becomes complex in order to improve luminous efficiency.

[0005] One or more aspects of this disclosure relate to a display device having high luminous efficiency and a simplified structure. However, the disclosed embodiments and aspects are examples, and this disclosure is not limited thereto.

[0006] The aspects not covered herein will be set forth in part in the description which follows, and in part will be apparent from the description or may be learned by practice of the presented embodiments.

[0007] According to one or more embodiments, a display device includes: a substrate; a first light-emitting device, a second light-emitting device, and a third light-emitting device, each including a first color emitting layer and located on the substrate; a second color quantum dot layer located on the second light-emitting device; a third color quantum dot layer located on the third light-emitting device; a low refractive index layer located on the second and third color quantum dot layers to correspond to the first to third light-emitting devices, and including a matrix portion and a plurality of particles in the matrix portion, wherein a first portion of the matrix portion remote from the first to third light-emitting devices includes fluorine; a first color filter layer located on the low refractive index layer to correspond to the first light-emitting device; a second color filter layer located on the low refractive index layer to correspond to the second light-emitting device; and a third color filter layer located on the low refractive index layer to correspond to the third light-emitting device.

[0008] The display device may further include a light-transmitting layer located above the first light-emitting device, wherein a low-refractive-index layer is located above the light-transmitting layer.

[0009] The fluorine content per unit volume of the first part of the matrix portion can be greater than the fluorine content per unit volume of the second part of the matrix portion. The second part is closer to the first to third light-emitting devices than the first part of the matrix portion.

[0010] The fluorine content per unit volume of the first part of the matrix portion can be greater than the fluorine content per unit volume of the second part of the matrix portion closest to the first to third light-emitting devices.

[0011] The further away from the first light-emitting device to the third light-emitting device, the greater the fluorine content per unit volume in the matrix portion can be.

[0012] The second part of the matrix portion may not include fluorine, and the second part of the matrix portion may be closer to the first to third light-emitting devices than the first part of the matrix portion.

[0013] The number of multiple particles per unit volume in the first part of the low refractive index layer can be less than the number of multiple particles per unit volume in the second part of the low refractive index layer. The second part of the low refractive index layer can be closer to the first to third light-emitting devices than the first part of the low refractive index layer.

[0014] The number of multiple particles per unit volume in the first part of the low-refractive-index layer away from the first light-emitting device to the third light-emitting device can be less than the number of multiple particles per unit volume in the second part of the low-refractive-index layer close to the first light-emitting device to the third light-emitting device.

[0015] The first part of the low-refractive-index layer, away from the first light-emitting device and towards the third light-emitting device, may not include multiple particles.

[0016] The display device may also include a cover layer located between the low refractive index layer and the second and third color quantum dot layers to correspond to the first to third light-emitting devices.

[0017] The matrix portion can be integrally formed from the bottom surface of the low refractive index layer near the first light-emitting device to the top surface of the low refractive index layer away from the first light-emitting device to the third light-emitting device.

[0018] According to one or more embodiments, a display device includes: a substrate; a first light-emitting device, a second light-emitting device, and a third light-emitting device, each including a first color emitting layer and located on the substrate; a second color quantum dot layer located on the second light-emitting device; a third color quantum dot layer located on the third light-emitting device; a low refractive index layer located on the second and third color quantum dot layers to correspond to the first to third light-emitting devices, and including a matrix portion and a plurality of particles in the matrix portion, wherein a first portion of the matrix portion adjacent to the first to third light-emitting devices includes fluorine; a first color filter layer located on the low refractive index layer to correspond to the first light-emitting device; a second color filter layer located on the low refractive index layer to correspond to the second light-emitting device; and a third color filter layer located on the low refractive index layer to correspond to the third light-emitting device.

[0019] The display device may further include a light-transmitting layer located above the first light-emitting device, wherein a low-refractive-index layer is located above the light-transmitting layer.

[0020] The fluorine content per unit volume of the first part of the matrix portion can be greater than the fluorine content per unit volume of the second part of the matrix portion, and the second part of the matrix portion can be farther away from the first to third light-emitting devices than the first part of the matrix portion is from the first to third light-emitting devices.

[0021] The fluorine content per unit volume of the first part of the matrix portion can be greater than the fluorine content per unit volume of the second part of the matrix portion, which is located away from the first light-emitting device to the third light-emitting device.

[0022] The closer to the first to the third light-emitting device, the greater the fluorine content per unit volume in the matrix portion can be.

[0023] The second part of the matrix portion may not include fluorine, and the second part of the matrix portion may be farther away from the first to third light-emitting devices than the first part of the matrix portion is from the first to third light-emitting devices.

[0024] The number of multiple particles per unit volume in the first part of the low refractive index layer can be less than the number of multiple particles per unit volume in the second part of the low refractive index layer. The second part of the low refractive index layer can be farther from the first to third light-emitting devices than the first part of the low refractive index layer is from the first to third light-emitting devices.

[0025] The number of multiple particles per unit volume in the first part of the low-refractive-index layer near the first to third light-emitting devices can be less than the number of multiple particles per unit volume in the second part of the low-refractive-index layer away from the first to third light-emitting devices.

[0026] The first part of the low-refractive-index layer near the first light-emitting device to the third light-emitting device may not include multiple particles.

[0027] The display device may also include a cover layer located between the low refractive index layer and the first color filter layer to the third color filter layer, corresponding to the first light-emitting device to the third light-emitting device.

[0028] The matrix portion can be integrally formed from the bottom surface of the low refractive index layer near the first light-emitting device to the top surface of the low refractive index layer away from the first light-emitting device to the third light-emitting device.

[0029] Other aspects and features of this disclosure will become more apparent from the accompanying drawings, claims, and detailed description. Attached Figure Description

[0030] The above and other aspects and features of the embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0031] Figure 1 This is a cross-sectional view showing a portion of the display device according to an embodiment;

[0032] Figure 2 and Figure 3 All illustrate the manufacturing process according to the embodiments. Figure 1 A cross-sectional view of the manufacturing process of the display device;

[0033] Figure 4 This is a cross-sectional view showing a portion of a display device according to another embodiment;

[0034] Figure 5 This is a cross-sectional view showing a portion of a display device according to another embodiment;

[0035] Figures 6 to 9 All illustrate the manufacturing process according to the embodiments. Figure 5 A cross-sectional view of the manufacturing process of the display device;

[0036] Figure 10 This is a cross-sectional view showing a portion of a display device according to another embodiment; and

[0037] Figure 11 This is a cross-sectional view showing a portion of a display device according to another embodiment. Detailed Implementation

[0038] Referring now to embodiments in more detail, examples of which are shown in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this respect, embodiments of this disclosure may have different suitable forms and should not be construed as limited to the description set forth herein. Therefore, some exemplary embodiments are described below with reference to the accompanying drawings to explain aspects and features of this description. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof. Additionally, “at least one selected from a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof.

[0039] Because this disclosure allows for various suitable modifications and numerous embodiments, certain embodiments will be shown in the accompanying drawings and described in the detailed description. Aspects and features of this disclosure, as well as methods for implementing them, will be illustrated with reference to the embodiments described in more detail below with reference to the accompanying drawings. However, this disclosure is not limited to the following embodiments and can be implemented in various suitable forms.

[0040] In the following description, embodiments will be illustrated with reference to the accompanying drawings, wherein the same elements are always denoted by the same reference numerals and may not be described repeatedly.

[0041] It will be understood that when an assembly such as a layer, film, region, or plate is referred to as being "on" another assembly, the assembly may be directly on said other assembly, or one or more intermediate assemblies may exist between them. Furthermore, for ease of interpretation, the dimensions of elements in the figures may be exaggerated or reduced. For example, this disclosure is not limited thereto because the dimensions and thicknesses of elements in the figures may be exaggerated or reduced for ease of interpretation.

[0042] Furthermore, any numerical range described herein is intended to include all subranges containing the same numerical precision within the range. For example, the range “1.0 to 10.0” is intended to include all subranges between the minimum value 1.0 and the maximum value 10.0 (and including the minimum value 1.0 and the maximum value 10.0) (i.e., a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6). Any maximum numerical limit described herein is intended to include all lower numerical limits contained therein, and any minimum numerical limit described in this specification is intended to include all higher numerical limits contained therein. Therefore, the applicant reserves the right to amend this specification (including the claims) to clearly describe any subranges contained within the range clearly described herein.

[0043] In the following examples, the X, Y, and Z axes are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the X, Y, and Z axes can be perpendicular to each other, or they can represent different directions that are not perpendicular to each other.

[0044] Figure 1 This is a cross-sectional view showing a portion of a display device according to an embodiment. (e.g.) Figure 1 As shown, the display device according to this embodiment includes a first pixel PX1, a second pixel PX2, and a third pixel PX3. However, this is merely an example, and the display device may include more pixels. Although in Figure 1 In this diagram, the first pixels PX1 to the third pixels PX3 are adjacent to each other, but this disclosure is not limited thereto. For example, elements such as wiring can be located among the first pixels PX1 to the third pixels PX3. Therefore, for example, the first pixel PX1 and the second pixel PX2 may not be positioned adjacent to each other. Furthermore, Figure 1 The cross-sections of the first pixel PX1 to the third pixel PX3 in the image do not have to be cross-sections in the same direction.

[0045] The display device according to this embodiment includes a substrate 100. The substrate 100 may include, for example, glass, metal, and / or polymer resin. When the substrate 100 is flexible and / or bendable, it may include, for example, a polymer resin (such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, and / or cellulose acetate propionate). Various suitable modifications can be made. For example, the substrate 100 may have a multilayer structure comprising two layers, each containing, for example, a polymer resin, and a barrier layer containing, for example, an inorganic material (such as silicon oxide, silicon nitride, and / or silicon oxynitride) disposed between the two layers.

[0046] The first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 are disposed on the substrate 100. In some embodiments, a plurality of display devices are disposed on the substrate 100. A first thin-film transistor 210, a second thin-film transistor 220, and a third thin-film transistor 230 electrically coupled (e.g., connected) to the display devices may also be disposed on the substrate 100. Figure 1 In this embodiment, an organic light-emitting device is disposed on a substrate 100 as a display device. When the organic light-emitting device is electrically connected (e.g., connected) to the first thin-film transistor 210, the second thin-film transistor 220, and the third thin-film transistor 230, the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 can be electrically connected (e.g., connected) to the first thin-film transistor 210, the second thin-film transistor 220, and the third thin-film transistor 230.

[0047] For reference, in Figure 1 In the image, a first thin-film transistor 210 is located in a first pixel PX1, a second thin-film transistor 220 is located in a second pixel PX2, and a third thin-film transistor 230 is located in a third pixel PX3. Each of the first thin-film transistor 210, the second thin-film transistor 220, and the third thin-film transistor 230 is electrically coupled (e.g., connected) to a pixel electrode of the display device located in the corresponding pixel. For ease of explanation, the first thin-film transistor 210 and the display device coupled (e.g., connected) to the first thin-film transistor 210 will be described, and this description can be applied to the second thin-film transistor 220 and the third thin-film transistor 230, as well as the display device coupled (e.g., connected) to the second thin-film transistor 220 and the third thin-film transistor 230. Therefore, a description of the second semiconductor layer 221, the second gate electrode 223, the second source electrode 225a and the second drain electrode 225b of the second thin-film transistor 220, and the second pixel electrode 321 may not be provided. Similarly, a description of the third semiconductor layer 231, the third gate electrode 233, the third source electrode 235a and the third drain electrode 235b of the third thin-film transistor 230 and the third pixel electrode 331 may not be provided.

[0048] The first thin-film transistor 210 may include a first semiconductor layer 211, a first gate electrode 213, a first source electrode 215a, and a first drain electrode 215b. The first semiconductor layer 211 may include, for example, amorphous silicon, polycrystalline silicon, an organic semiconductor material, and / or an oxide semiconductor material. The first gate electrode 213 may include, for example, any of a variety of suitable conductive materials, and may have any of a variety of suitable layer structures. For example, the first gate electrode 213 may include, for example, a molybdenum (Mo) layer and / or an aluminum (Al) layer. In some embodiments, the first gate electrode 213 may include, for example, TiN. x The first source electrode 215a and the first drain electrode 215b may also have any conductive material from a variety of suitable conductive materials, and may have any layer structure from a variety of suitable layer structures. For example, each of the first source electrode 215a and the first drain electrode 215b may include (e.g., is) a Ti layer, an Al layer, and / or a copper (Cu) layer. The first semiconductor layer 211 may have a source region and / or a drain region, and as shown in the figure. Figure 1The first source electrode 215a or the first drain electrode 215b shown may be wiring coupled (e.g., connected) to the source or drain region of the first semiconductor layer 211. For example, the first semiconductor layer 211 may have a source region, a drain region, and a channel region between the source and drain regions; the first source electrode 215a may be coupled (e.g., connected) to the source region; and the first drain electrode 215b may be coupled (e.g., connected) to the drain region. In some embodiments, the first gate electrode 213 may be stacked with the channel region of the first semiconductor layer 211. This can be applied to the following embodiments and modifications thereof.

[0049] To ensure insulation between the first semiconductor layer 211 and the first gate electrode 213, a gate insulating film 121 comprising (e.g., is) an inorganic material (such as silicon oxide, silicon nitride, and / or silicon oxynitride) can be formed between the first semiconductor layer 211 and the first gate electrode 213. A first interlayer insulating film 131 comprising (e.g., is) an inorganic material (such as silicon oxide, silicon nitride, and / or silicon oxynitride) can be formed over the first gate electrode 213, and the first source electrode 215a and the first drain electrode 215b can be formed over the first interlayer insulating film 131. Thus, the insulating film comprising (e.g., is) an inorganic material can be formed using chemical vapor deposition (CVD) and / or atomic layer deposition (ALD). This can be applied to the following embodiments and modifications thereof.

[0050] A buffer layer 110 comprising (e.g.) inorganic materials (such as silicon oxide, silicon nitride, and / or silicon oxynitride) may be disposed between the substrate 100 and the first thin-film transistor 210 having the above structure. The buffer layer 110 may planarize the top surface of the substrate 100, or may prevent or reduce the penetration of impurities from the substrate 100, etc., into the first semiconductor layer 211 of the first thin-film transistor 210, or minimize the penetration of impurities from the substrate 100, etc., into the first semiconductor layer 211 of the first thin-film transistor 210.

[0051] The planarization layer 140 can be disposed on the first thin-film transistor 210. For example, as Figure 1 As shown, when an organic light-emitting device is disposed on the first thin-film transistor 210, the planarization layer 140 can substantially planarize the top surface of the protective film covering the first thin-film transistor 210. The planarization layer 140 may include (e.g., is) an organic material (such as acrylic, benzocyclobutene (BCB), and / or hexamethyldisiloxane (HMDSO)). Although in Figure 1 The planarization layer 140 has a single-layer structure, but it can be modified in various ways. For example, the planarization layer 140 can have a multi-layer structure.

[0052] The display device can be disposed on the planarization layer 140 on the substrate 100. For example... Figure 1As shown, the organic light-emitting device can be used as a display device. In the first pixel PX1, the organic light-emitting device may include, for example, a first pixel electrode 311, a counter electrode 305, and an intermediate layer 303 disposed between the first pixel electrode 311 and the counter electrode 305 and including an emission layer. Figure 1 As shown, the first pixel electrode 311 is electrically coupled (e.g., connected) to the first thin-film transistor 210 via an opening (e.g., a contact hole) formed in the planarization layer 140, through contact with one of the first source electrode 215a and the first drain electrode 215b. The second pixel PX2 includes a second pixel electrode 321, and the third pixel PX3 includes a third pixel electrode 331. Each of the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 may include a light-transmitting conductive layer formed of a light-transmitting conductive oxide such as indium tin oxide (ITO), In2O3, and / or indium zinc oxide (IZO), and a reflective layer formed of a metal such as aluminum (Al) and / or silver (Ag). For example, each of the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 may have a three-layer structure including ITO / Ag / ITO.

[0053] An intermediate layer 303, including an emitting layer, can be integrally formed on the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331. A counter electrode 305 on the intermediate layer 303 can also be integrally formed on the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331. The counter electrode 305 can include a light-transmitting conductive layer formed of ITO, In2O3, and / or IZO, and can include a semi-transmitting film comprising (e.g., is) a metal such as silver (Ag), magnesium (Mg), and / or ytterbium (Yb). For example, the counter electrode 305 can be a semi-transmitting film comprising (e.g., is) MgAg and / or AgYb.

[0054] A pixel defining layer 150 may be disposed on top of the planarization layer 140. The pixel defining layer 150 has an opening corresponding to each pixel (e.g., at least the central portion of each of the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 is exposed through its opening) to define the pixel. For example, the pixel defining layer 150 may cover a portion (e.g., an edge) of the first pixel electrode 311 and may have an opening exposing another portion (e.g., a central portion) of the upper surface of the first pixel electrode 311. Additionally, as... Figure 1As shown, the pixel defining layer 150 increases the distance between the counter electrode 305 and the edges of each of the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 to prevent or suppress the formation of electric arcs at the edges of each of the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331. The pixel defining layer 150 may include (e.g., is) an organic material (such as polyimide and / or hexamethyldisiloxane (HMDSO)).

[0055] Intermediate layer 303 may include (e.g., is) a low molecular weight material or a high molecular weight material. When intermediate layer 303 has a low molecular weight material, intermediate layer 303 may have a single structure or a multilayer structure in which hole injection layer (HIL), hole transport layer (HTL), emitter layer (EML), electron transport layer (ETL), and electron injection layer (EIL) are stacked, and may be formed by vacuum deposition. In some embodiments, intermediate layer 303 may include an EML and one or more of HIL, HTL, ETL, and EIL. When intermediate layer 303 includes (e.g., is) a high molecular weight material, intermediate layer 303 may have a structure including HTL and EML. In this case, HTL may include (e.g., is) poly(3,4-ethylenedioxythiophene) (PEDOT), and EML may include (e.g., is) a polymer material (such as poly(phenylenevinylene) (PPV) and / or polyfluorene). Intermediate layer 303 may be formed by screen printing, inkjet printing, deposition, and / or laser-induced thermal imaging (LITI). However, the intermediate layer 303 is not limited to this and can have any of the various other suitable structures.

[0056] Although the intermediate layer 303 may include layers integrally formed over the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 as described above, the intermediate layer 303 may also include layers patterned to correspond to each of the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331. In some embodiments, the intermediate layer 303 includes a first color emitting layer. The first color emitting layer may be integrally formed over the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331, or may be patterned to correspond to each of the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331. The first color emitting layer may emit light in a first wavelength band, for example, light having a wavelength of about 450 nm to about 495 nm.

[0057] Counter electrode 305 is disposed on the intermediate layer 303 to correspond to the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331. Counter electrode 305 can be integrally formed in multiple organic light-emitting devices.

[0058] Because each organic light-emitting device (OLED) may be susceptible to damage from external moisture and / or oxygen, the encapsulation layer 500 can cover and protect the OLED. The encapsulation layer 500 may include a first inorganic encapsulation layer 510, an organic encapsulation layer 520, and a second inorganic encapsulation layer 530. The first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may be in contact with each other outside the organic encapsulation layer 520. Both the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may comprise (e.g., are) inorganic materials, such as silicon oxide, silicon nitride, and / or silicon oxynitride. For example, each of the first inorganic encapsulation layer 510 and the second inorganic encapsulation layer 530 may extend beyond the organic encapsulation layer 520 in a planar view and contact to partially or completely encapsulate the organic encapsulation layer 520. The organic encapsulation layer 520 may include (e.g., are) polydimethylsiloxane and / or polyacrylate, for example.

[0059] A second color quantum dot layer 425 is disposed above a second light-emitting device located in the second pixel PX2. For example, the second color quantum dot layer 425 is disposed above a second pixel electrode 321 of the second light-emitting device located in the second pixel PX2. Therefore, when viewed in a direction perpendicular to the substrate 100 (Z-axis direction) (e.g., when viewed in a planar view), the second color quantum dot layer 425 is superimposed on the second pixel electrode 321. The second color quantum dot layer 425 can convert light of a first wavelength band generated by the intermediate layer 303 on the second pixel electrode 321 into light of a second wavelength band. For example, when light with a wavelength of about 450 nm to about 495 nm is generated by the intermediate layer 303 on the second pixel electrode 321, the second color quantum dot layer 425 can convert the light into light with a wavelength of about 495 nm to about 570 nm. Therefore, in the second pixel PX2, light with a wavelength of about 495 nm to about 570 nm is emitted to the outside.

[0060] A third color quantum dot layer 435 is disposed above a third light-emitting device located in the third pixel PX3. For example, the third color quantum dot layer 435 is disposed above the third pixel electrode 331 of the third light-emitting device located in the third pixel PX3. Therefore, when viewed in a direction perpendicular to the substrate 100 (Z-axis direction) (e.g., when viewed in a planar view), the third color quantum dot layer 435 is superimposed on the third pixel electrode 331. The third color quantum dot layer 435 can convert light of a first wavelength band generated by the intermediate layer 303 on the third pixel electrode 331 into light of a third wavelength band. For example, when light with a wavelength of about 450 nm to about 495 nm is generated by the intermediate layer 303 on the third pixel electrode 331, the third color quantum dot layer 435 can convert the light into light with a wavelength of about 630 nm to about 780 nm. Therefore, in the third pixel PX3, light with a wavelength of about 630 nm to about 780 nm is emitted to the outside.

[0061] Each of the second color quantum dot layer 425 and the third color quantum dot layer 435 may have a structure in which quantum dots are dispersed in a resin. In some embodiments and modifications thereof, quantum dots may refer to semiconductor compound crystals and may include (e.g., are) any suitable material capable of emitting light with a variety of suitable wavelengths depending on the size of the crystal. The diameter of each of the quantum dots may range, for example, from about 1 nm to about 10 nm.

[0062] Quantum dots can be synthesized using wet chemical processes, metal-organic chemical vapor deposition (MOCVD), and / or molecular beam epitaxy (MBE). Wet chemical processes involve mixing an organic solvent with a precursor material and then growing quantum dot crystals. In wet chemical processes, the organic solvent naturally acts as a dispersant coordinating on the surface of the quantum dot crystals and controls the crystal growth, making them easier than vapor deposition methods such as MOCVD or MBE. Furthermore, wet chemical processes are inexpensive and allow for controlled growth of quantum dot particles.

[0063] Such quantum dots may include (for example) group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0064] Examples of group II-VI semiconductor compounds include binary compounds (such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS), ternary compounds (such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZn Se, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS), quaternary compounds (such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe), or any combination thereof.

[0065] Examples of group III-V semiconductor compounds include binary compounds (such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb), ternary compounds (such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and / or InPSb), quaternary compounds (such as GaAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb), or any combination thereof. Group III-V semiconductor compounds may also include (e.g., are) group II elements. Examples of group III-V semiconductor compounds that also include group II elements may include InZnP, InGaZnP, and / or InAlZnP.

[0066] Examples of III-VI semiconductor compounds may include binary compounds (such as GaS, GaSe, Ga2Se3, GaTe, InS, In2S3, InSe, In2Se3 and / or InTe), ternary compounds (such as InGaS3 and / or InGaSe3), or any combination thereof.

[0067] Examples of group I-III-VI semiconductor compounds may include ternary compounds (such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2 and / or AgAlO2) or any combination thereof.

[0068] Examples of IV-VI semiconductor compounds may include binary compounds (such as SnS, SnSe, SnTe, PbS, PbSe and / or PbTe), ternary compounds (such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe), quaternary compounds (such as SnPbSSe, SnPbSeTe and / or SnPbSTe), or any combination thereof.

[0069] Examples of group IV elements or compounds may include single elements such as Si and / or Ge, binary compounds such as SiC and / or SiGe, or any combination thereof.

[0070] Elements included in multi-element compounds such as binary, ternary, and / or quaternary compounds may exist in particles at uniform or non-uniform concentrations.

[0071] Quantum dots can have a core-shell structure or a single structure with a uniform elemental concentration within the quantum dot. For example, the material included in the core (e.g., constituting the core) and the material included in the shell (e.g., constituting the shell) can be different from each other. The shell of the quantum dot can serve as a protective layer to maintain semiconductor properties by preventing, inhibiting, or reducing the occurrence of chemical transformation of the core and / or as a charging layer to provide electrophoretic properties to the quantum dot. The shell can have a single structure or a multilayer structure. The interface between the core and the shell can have a concentration gradient in which the elemental concentration in the shell gradually decreases towards the center.

[0072] Examples of the shell for quantum dots can include, for example, metallic or nonmetallic oxides, semiconductor compounds, or combinations thereof. Examples of metallic or nonmetallic oxides can include binary compounds (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and / or NiO), ternary compounds (such as MgAl2O4, CoFe2O4, NiFe2O4, and / or CoMnO4), or any combination thereof. Examples of semiconductor compounds can include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, or any combination thereof as described above. Examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0073] Quantum dots can have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less. In some embodiments, the FWHM can be about 40 nm or less. In some embodiments, the FWHM can be about 30 nm or less. When the FWHM is in this range, color purity or color reproducibility can be improved. In addition, because light emitted through quantum dots is emitted in all directions, the optical viewing angle can be improved.

[0074] Quantum dots can be spherical, pyramidal, multi-armed, or cubic nanoparticles, nanotubes, nanowires, nanofibers, or nanoplate particles.

[0075] Because the band gap (e.g., wavelength) can be tuned by adjusting the size of quantum dots, light of various suitable wavelengths can be obtained through a quantum dot emitting layer. Therefore, light-emitting devices for emitting light with various suitable wavelengths can be realized by using quantum dots of different sizes. More specifically, the size of the quantum dots can be selected or set to emit red, green, and / or blue light. Additionally, the size of the quantum dots can be selected or set to combine various colors of light and emit white light.

[0076] Each of the second color quantum dot layer 425 and the third color quantum dot layer 435 may include a scatterer. Any suitable resin included in each of the second color quantum dot layer 425 and the third color quantum dot layer 435 may be used, provided that it has suitable dispersion characteristics for the scatterer and transmits light. For example, polymeric resins such as acrylic resins, imide resins, and / or epoxy resins may be used as the resin included in each of the second color quantum dot layer 425 and the third color quantum dot layer 435.

[0077] The scatterer included in each of the second color quantum dot layer 425 and the third color quantum dot layer 435 can be a particle (e.g., a light-scattering particle) having a refractive index different from that of the light-transmitting resin included in each of the second color quantum dot layer 425 and the third color quantum dot layer 435. The scatterer is not limited. The scatterer can form an optical interface between the scatterer and the light-transmitting resin and can partially scatter transmitted light. For example, the scatterer can be a metal oxide particle or an organic particle. Examples of metal oxides used for the scatterer can include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), and / or tin oxide (SnO2), and examples of organic materials used for the scatterer can include acrylic resins and / or polyurethane resins. The scatterer can scatter light in several directions regardless of the angle of incidence and substantially does not change the wavelength of the incident light. Therefore, the scatterer can improve the side visibility of the display device. In addition, the scatterer included in each of the second color quantum dot layer 425 and the third color quantum dot layer 435 can increase the chance of light incident on the second color quantum dot layer 425 and the third color quantum dot layer 435 encountering quantum dots (e.g., incident on quantum dots or interacting with quantum dots), thereby improving light conversion efficiency.

[0078] In the first pixel PX1, light with a first wavelength generated by the intermediate layer 303 is emitted to the outside without wavelength conversion. Therefore, the first pixel PX1 does not include a quantum dot layer. Therefore, a light-transmitting layer 415 formed of a light-transmitting resin is disposed above the first light-emitting device located in the first pixel PX1. For example, the light-transmitting layer 415 is disposed above the first pixel electrode 311 of the first light-emitting device located in the first pixel PX1. Therefore, when viewed in a direction perpendicular to the substrate 100 (Z-axis direction) (e.g., when viewed in a planar view), the light-transmitting layer 415 is superimposed on the first pixel electrode 311.

[0079] The light-transmitting layer 415 may include a diffuser, and any suitable resin included in the light-transmitting layer 415 may be used, provided that it has suitable dispersion characteristics for the diffuser and transmits light. For example, polymeric resins such as acrylic resins, imide resins, and / or epoxy resins may be used as the resin included in the light-transmitting layer 415.

[0080] The scatterer included in the light-transmitting layer 415 can be a particle (e.g., a light-scattering particle) having a refractive index different from that of the light-transmitting resin included in the light-transmitting layer 415. The scatterer is not specifically limited. For example, the scatterer can form an optical interface between the scatterer and the light-transmitting resin and can partially scatter transmitted light. For example, the scatterer can be a metal oxide particle or an organic particle. Examples of metal oxides used for the scatterer can include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), and / or tin oxide (SnO2), and examples of organic materials used for the scatterer can include acrylic resins and / or polyurethane resins. The scatterer can scatter light in several directions regardless of the angle of incidence and substantially does not change the wavelength of the incident light (Lambertian reflection). Therefore, the scatterer can improve the side visibility of the display device.

[0081] As described above, the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 are configured to correspond to the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331, respectively. For this purpose, a barrier layer 401 having vias corresponding to the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 can be disposed on the encapsulation layer 500. In some embodiments, the barrier layer 401 may (e.g., in a plan view) separate or space the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435. When the vias of the barrier layer 401 correspond to the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331, this means that when viewed in a direction orthogonal to or perpendicular to the substrate 100 (Z-axis direction) (e.g., when viewed in a plan view), the vias overlap with the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331. In some embodiments, the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 may be disposed in the through-holes of the barrier layer 401 corresponding to the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331, respectively. The barrier layer 401 may include (e.g., is) any of a variety of suitable materials (e.g., inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride).

[0082] A capping layer 403 is disposed above the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435. The capping layer 403 can be integrally formed as a first light-emitting device corresponding to the first pixel PX1, the second light-emitting device corresponding to the second pixel PX2, and the third light-emitting device corresponding to the third pixel PX3. The capping layer 403 may include (e.g., is) an inorganic material (such as silicon oxide, silicon nitride, and / or silicon oxynitride).

[0083] A low-refractive-index layer 450 is disposed on top of the capping layer 403. For example, the low-refractive-index layer 450 is disposed on top of the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 to correspond to the first light-emitting device of the first pixel PX1, the second light-emitting device of the second pixel PX2, and the third light-emitting device of the third pixel PX3. The low-refractive-index layer 450 includes a matrix portion 451 and a plurality of particles 453 within the matrix portion 451. A first portion P1 of the low-refractive-index layer 450 (in the +Z-axis direction (positive Z-axis direction)) away from the first light-emitting device of the first pixel PX1, the second light-emitting device of the second pixel PX2, and the third light-emitting device of the third pixel PX3 comprises fluorine. For example, the matrix portion 451 of the first portion P1 of the low-refractive-index layer 450 comprises fluorine. For example, the first portion of the matrix portion 451 corresponding to the first portion P1 of the low-refractive-index layer 450 comprises fluorine. In some embodiments, the first portion P1 of the low-refractive-index layer 450 may be the uppermost part of the low-refractive-index layer 450.

[0084] A first color filter layer 413, a second color filter layer 423, and a third color filter layer 433 are disposed on a low-refractive-index layer 450. For example, the first color filter layer 413 is disposed on the low-refractive-index layer 450 to correspond to a first light-emitting device located in a first pixel PX1, the second color filter layer 423 is disposed on the low-refractive-index layer 450 to correspond to a second light-emitting device located in a second pixel PX2, and the third color filter layer 433 is disposed on the low-refractive-index layer 450 to correspond to a third light-emitting device located in a third pixel PX3. For example, the first color filter layer 413 is disposed on the first pixel electrode 311 of the first light-emitting device located in the first pixel PX1, the second color filter layer 423 is disposed on the second pixel electrode 321 of the second light-emitting device located in the second pixel PX2, and the third color filter layer 433 is disposed on the third pixel electrode 331 of the third light-emitting device located in the third pixel PX3. Therefore, when viewed in a direction perpendicular to the substrate 100 (Z-axis direction) (e.g., when viewed in a planar view), the first color filter layer 413 is stacked with the first pixel electrode 311, the second color filter layer 423 is stacked with the second pixel electrode 321, and the third color filter layer 433 is stacked with the third pixel electrode 331.

[0085] The first color filter layer 413 can allow only light with wavelengths of about 450 nm to about 495 nm to pass through it (e.g., it can only transmit light with wavelengths of about 450 nm to about 495 nm), the second color filter layer 423 can allow only light with wavelengths of about 495 nm to about 570 nm to pass through it (e.g., it can only transmit light with wavelengths of about 495 nm to about 570 nm), and the third color filter layer 433 can allow only light with wavelengths of about 630 nm to about 780 nm to pass through it (e.g., it can only transmit light with wavelengths of about 630 nm to about 780 nm). For example, the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433 can transmit only blue light, green light, and red light, respectively. The first color filter layer 413, the second color filter layer 423, and the third color filter layer 433 can reduce the reflection of external light in the display device.

[0086] For example, when external light reaches the first color filter layer 413, as described above, only light with a set or preset wavelength passes through the first color filter layer 413, and light with other wavelengths is absorbed by the first color filter layer 413. Therefore, among the external light incident on the display device, as described above, only light with a set or preset wavelength passes through the first color filter layer 413, and part of the light is reflected at the counter electrode 305 (e.g., on the counter electrode 305) or the first pixel electrode 311 (e.g., on the first pixel electrode 311) below the first color filter layer 413, and then emitted to the outside again. As a result, because only part of the external light incident at the location of the first pixel PX1 is reflected to the outside, the reflection of external light can be reduced. This description can also be applied to the second color filter layer 423 and the third color filter layer 433.

[0087] A black matrix 405, including (e.g.) carbon black, may be disposed between the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433. For example, the black matrix 405 may (e.g., in a plan view) define the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433, such that the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433 are separated and / or spaced apart. In this case, the black matrix 405 may have through-holes corresponding to the first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 (e.g., through-holes similar to those in the barrier layer 401), similar to the barrier layer 401. In some embodiments, the display device does not include the black matrix 405. In this configuration, when viewed in a direction perpendicular to the substrate 100 (Z-axis direction) (e.g., when viewed in a planar view), the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433 may at least partially overlap each other between the first pixel PX1, the second pixel PX2, and the third pixel PX3 (e.g., in the region between the first pixel PX1, the second pixel PX2, and the third pixel PX3 in a planar view).

[0088] The refractive index (refractive index) of the low-refractive-index layer 450 is lower than that of the layer below (e.g., immediately below) the low-refractive-index layer 450. Figure 1 In the display device shown, the refractive index of the low-refractive-index layer 450 is lower than the refractive index of the capping layer 403 beneath the low-refractive-index layer 450. When the capping layer 403 comprises (e.g., is) an inorganic material (such as silicon oxide, silicon nitride, and / or silicon oxynitride), the refractive index of the capping layer 403 can be in the range of about 1.4 to about 1.5. The refractive index of the low-refractive-index layer 450 is lower than the refractive index of the capping layer 403, and can be in the range of, for example, about 1.1 to about 1.3. Because the refractive index of the low-refractive-index layer 450 is lower than the refractive index of the layer beneath the low-refractive-index layer 450, a portion of the light traveling from the capping layer 403 beneath the low-refractive-index layer 450 to the low-refractive-index layer 450 is totally reflected at an interface (e.g., the interface between the capping layer 403 and the low-refractive-index layer 450) and travels downwards again through the capping layer 403.

[0089] In the second pixel PX2, totally internally reflected light travels through the capping layer 403 toward the second color quantum dot layer 425 beneath the capping layer 403. When the totally internally reflected light has already been converted by the second color quantum dot layer 425 to have a wavelength of about 495 nm to about 570 nm, the light is reflected at the second pixel electrode 321 (e.g., on the second pixel electrode 321) or the counter electrode 305 (e.g., on the counter electrode 305) beneath the second color quantum dot layer 425, passes through the low refractive index layer 450 again, and is emitted to the outside. When the totally internally reflected light has a wavelength of about 450 nm to about 495 nm and passes through (e.g., has already passed through) the second color quantum dot layer 425 without being converted by the second color quantum dot layer 425 to have a wavelength of about 495 nm to about 570 nm, the totally internally reflected light can pass through the second color quantum dot layer 425 again and can be converted by the second color quantum dot layer 425 to have a wavelength of about 495 nm to about 570 nm. Next, the light is reflected at the second pixel electrode 321 (e.g., on the second pixel electrode 321) or the counter electrode 305 (e.g., on the counter electrode 305) below the second color quantum dot layer 425, passes through the low refractive index layer 450 again, and is emitted to the outside.

[0090] In the third pixel PX3, totally internally reflected light travels through the capping layer 403 toward the third color quantum dot layer 435 beneath the capping layer 403. When the totally internally reflected light has already been converted by the third color quantum dot layer 435 to have a wavelength of about 630 nm to about 780 nm, the light is reflected at the third pixel electrode 331 (e.g., on the third pixel electrode 331) or the counter electrode 305 (e.g., on the counter electrode 305) beneath the third color quantum dot layer 435, passes through the low refractive index layer 450 again, and is emitted to the outside. When the totally internally reflected light has a wavelength of about 450 nm to about 495 nm and passes through (e.g., has already passed through) the third color quantum dot layer 435 without being converted by the third color quantum dot layer 435 to have a wavelength of about 630 nm to about 780 nm, the totally internally reflected light can pass through the third color quantum dot layer 435 again and can be converted by the third color quantum dot layer 435 to have a wavelength of about 630 nm to about 780 nm. Next, the light is reflected at the third pixel electrode 331 (e.g., on the third pixel electrode 331) or the counter electrode 305 (e.g., on the counter electrode 305) below the third color quantum dot layer 435, passes through the low refractive index layer 450 again, and is emitted to the outside.

[0091] In the display device according to this embodiment, since the light generated by the second pixel PX2 or the third pixel PX3 is minimized or prevented from being emitted to the outside without being converted by the second color quantum dot layer 425 or the third color quantum dot layer 435, the luminous efficiency can be significantly improved.

[0092] As described above, the low refractive index layer 450 has a lower refractive index than the capping layer 403 (which ranges from about 1.4 to about 1.5). For example, the refractive index of the low refractive index layer 450 may be in the range of, for example, from about 1.1 to about 1.3. The low refractive index layer 450 includes a matrix portion 451 and a plurality of particles 453 in the matrix portion 451.

[0093] The matrix portion 451 may include (e.g., is) a polymeric material. The matrix portion 451 may include at least one selected from acrylic polymers, silicone polymers, polyurethane polymers, and imide polymers. For example, the matrix portion 451 may include (e.g., is) any one polymeric material selected from acrylic polymers, silicone polymers, polyurethane polymers, and imide polymers, or a combination of multiple polymeric materials. Additionally, the matrix portion 451 may include (e.g., is) at least one selected from siloxane polymers, silsesquioxane polymers, fluorine-substituted acrylic polymers, fluorine-substituted silicone polymers, fluorine-substituted polyurethane polymers, and fluorine-substituted imide polymers. The matrix portion 451 may be formed from siloxanes, acrylic, polyimides, polyurethanes, and / or epoxy resins. The matrix portion 451 may be formed by curing polymeric resins such as siloxanes, acrylic, polyimides, polyurethanes, and / or epoxy resins in a high-temperature process and / or a UV treatment process.

[0094] The plurality of particles 453 in the matrix portion 451 may be silicon dioxide. A coating layer formed of an inorganic material may be on the surface of the plurality of particles 453. The coating layer may include (e.g., is) silicon dioxide and / or magnetite (Fe3O4). In some embodiments, the plurality of particles 453 may be hollow particles filled with air. When the plurality of particles 453 are hollow particles, the plurality of particles 453 may include silicon dioxide, acrylic, polyimide, polyurethane, styrene, and / or epoxy resin. The refractive index of the plurality of particles 453 may, for example, be equal to or greater than 1.1 and equal to or less than 1.3. The refractive index of the low refractive index layer 450 may be equal to or greater than 1.1 and equal to or less than 1.3 by adjusting the average diameter of each of the plurality of particles 453 included in the low refractive index layer 450 to be equal to or greater than 20 nm and equal to or less than 150 nm. For example, the average diameter of the plurality of particles 453 can be in the range of about 20 nm to about 150 nm, and can be set such that the refractive index of the low refractive index layer 450 is set in the range of 1.1 to 1.3.

[0095] In the manufacturing process, after the low refractive index layer 450 is formed, it is useful (e.g., necessary) to prevent an increase in the refractive index of the low refractive index layer 450, reduce an increase in the refractive index of the low refractive index layer 450, or minimize an increase in the refractive index of the low refractive index layer 450. For example, after the low refractive index layer 450 is formed, the following steps are performed (e.g.) Figure 1 The process shown involves forming a black matrix 405 and / or a first color filter layer 413, a second color filter layer 423, and a third color filter layer 433 on a low-refractive-index layer 450. Since the process of forming the black matrix 405 and / or the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433 uses a solution, it is useful (e.g., necessary) to minimize or prevent the solution from penetrating into the low-refractive-index layer 450. This is because voids, etc., exist as empty spaces in the matrix portion 451 of the low-refractive-index layer 450, and when the solution penetrates into the low-refractive-index layer 450, the solution fills these voids, thereby increasing the refractive index of the low-refractive-index layer 450.

[0096] Therefore, after forming the low refractive index layer 450, it is conceivable that an additional capping layer is formed on the top surface of the low refractive index layer 450 (e.g., the surface furthest along the +Z axis direction) using silicon oxide, silicon nitride, and / or silicon oxynitride. However, in this case, because the process of forming the additional capping layer has to be performed, the time spent manufacturing the display device increases and the defect rate increases.

[0097] However, in the display device according to this embodiment, in order to simplify the manufacturing process and avoid increasing the refractive index of the low refractive index layer 450 in subsequent processes, the first portion P1 of the low refractive index layer 450 away from (e.g., away from) the first light-emitting device, the second light-emitting device, and the third light-emitting device (e.g., the matrix portion 451 of the first portion P1 of the low refractive index layer 450) comprises fluorine. Fluorine is a hydrophobic material. Therefore, the first portion P1 of the low refractive index layer 450 is hydrophobic. Therefore, even when a solution is used in a subsequent process after the formation of the low refractive index layer 450, it is possible to prevent or stop the solution from penetrating into the first portion P1 of the low refractive index layer 450, or to minimize the solution penetrating into the first portion P1 of the low refractive index layer 450. Therefore, after the formation of the low refractive index layer 450, it is possible to effectively prevent the increase of the refractive index of the low refractive index layer 450, or to effectively reduce or minimize the increase of the refractive index of the low refractive index layer 450. The thickness of the first part P1 can be in the range of, for example, from about 10 nm to about 1000 nm.

[0098] When the organic material layer and the inorganic material layer come into contact with each other, stress may occur at the interface, and delamination may occur between the organic material layer and the inorganic material layer. However, in the display device according to this embodiment, no cover layer of inorganic material is added between the low refractive index layer 450, which is an organic material layer, and the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433, which are also organic material layers. Therefore, delamination and other issues caused by stress at the interface can be effectively prevented or reduced.

[0099] Figure 2 and Figure 3 It shows the manufacturing process. Figure 1 A cross-sectional view of the manufacturing process of the display device.

[0100] like Figure 2 As shown, after forming the capping layer 403, a material for forming the low refractive index layer 450 is applied to the capping layer 403 (e.g., applied onto the capping layer 403). The material for forming the low refractive index layer 450 may comprise, for example, 80 wt% solvent and 20 wt% solids. Diethylene glycol ethyl methyl ether (MEDG) and / or propylene glycol methyl ether acetate (PGMEA) may be used as solvents. In some embodiments, 50 wt% of the solids may be resin, and the remaining 50 wt% of the solids may be a plurality of particles 453 and a small amount of curing agent and / or dispersant. When the plurality of particles 453 is less than 40 wt% of the solids, the refractive index of the low refractive index layer 450 may not be sufficiently reduced, and when the plurality of particles 453 is greater than 70 wt% of the solids, the bonding strength with the matrix portion 451 may be insufficient and / or the dispersibility may be insufficient. Therefore, the plurality of particles 453 may be equal to or greater than 40 wt% and equal to or less than 70 wt% of the solids, and in some embodiments may be 50 wt%.

[0101] The material used to form the low refractive index layer 450 does not need to be used directly; the final material for forming the low refractive index layer 450 can be prepared by adding fluorine to the material used to form the low refractive index layer 450. When the liquid material used to form the low refractive index layer 450 is applied to the capping layer 403, such as Figure 2 As shown, multiple particles 453 are substantially uniformly dispersed in the material used to form the low refractive index layer 450.

[0102] Next, a thermosetting process is performed. First, a pre-baking process can be performed at 100°C for approximately 50 to 100 seconds. During this process, most of the solvent is removed. Fluorine in the material used to form the low-refractive-index layer 450 moves away from the capping layer 403 (+Z-axis direction). Fluorine is hydrophobic and therefore moves closer to the air. For reference, as the fluorine moves closer to the air, multiple particles 453 move in the opposite direction to the direction in which the fluorine moves (-Z-axis direction). After the pre-baking, a primary curing process can be performed at 180°C for approximately 30 minutes.

[0103] After this process, such as Figure 3 As shown, the first portion P1 of the low-refractive-index layer 450 that is away from (e.g., away from in the +Z axis direction) the first light-emitting device, the second light-emitting device, and the third light-emitting device (e.g., the matrix portion 451 of the first portion P1 of the low-refractive-index layer 450) includes fluorine. Next, when the black matrix 405 and / or the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433 are formed on the low-refractive-index layer 450, because the first portion P1 of the low-refractive-index layer 450 (e.g., the matrix portion 451 of the first portion P1 of the low-refractive-index layer 450) includes hydrophobic fluorine, it is possible to prevent the solution used in the process of forming the black matrix 405 and / or the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433 from penetrating into the low-refractive-index layer 450, or to reduce or minimize the amount of solution penetrating into the low-refractive-index layer 450. Therefore, in the display device according to this embodiment, in addition to the process of forming the low refractive index layer 450, without performing the process of forming an additional capping layer, it is possible to effectively prevent the refractive index of the low refractive index layer 450 from increasing after its formation, or to reduce or minimize the increase in the refractive index of the low refractive index layer 450. The same effect can be achieved even when UV curing or the like is used instead of thermal curing. This can be applied to the following embodiments and modifications thereof.

[0104] In the display device according to this embodiment, the fluorine content per unit volume in the first portion P1 of the low refractive index layer 450 (e.g., the matrix portion 451 of the first portion P1 of the low refractive index layer 450) is greater than the fluorine content per unit volume in the second portion P2 of the low refractive index layer 450 that is adjacent in one direction (e.g., adjacent along the -Z axis direction) to the first to the third light-emitting devices (e.g., the matrix portion 451 of the second portion P2 of the low refractive index layer 450, for example, the second portion of the matrix portion 451 corresponding to the second portion P2 of the low refractive index layer 450). In some embodiments, the first portion P1 may be above the second portion P2, such that the second portion P2 is between the capping layer 403 and the first portion P1. In some embodiments, the fluorine content per unit volume in the first portion P1 of the low-refractive-index layer 450 (e.g., the matrix portion 451 of the first portion P1 of the low-refractive-index layer 450) is greater than the fluorine content per unit volume in the second portion P2, and the second portion P2 is closer to the first to third light-emitting devices than the first portion P1 of the low-refractive-index layer 450. As used herein, when a portion of the first component is described as "closer" to the second component, this can mean, for example, that portion is closer to the second component than another portion of the first component. As used herein, when a portion of the first component is described as "away from" or "far from" the second component, this can mean, for example, that portion is farther from the second component than another portion of the first component.

[0105] As described above, in the process of forming the low refractive index layer 450, the fluorine in the material used to form the low refractive index layer 450 moves in a direction away from the capping layer 403 (+Z axis direction). Therefore, the farther away from the first to the third light-emitting devices, the greater the fluorine content per unit volume in the matrix portion 451. For example, the fluorine content per unit volume in the matrix portion 451 can increase as it moves from the portion of the matrix portion 451 closer to (e.g., closer in the -Z axis direction) the first to the third light-emitting devices to the portion of the matrix portion 451 further away from (e.g., further away in the +Z axis direction) the first to the third light-emitting devices. For example, the fluorine content per unit volume in the matrix portion 451 (e.g., fluorine concentration) can increase along the direction away from the first to the third light-emitting devices. For example, the fluorine content per unit volume in the matrix portion 451 can increase along the +Z axis direction (e.g., from the bottom surface of the low refractive index layer 450 to the top surface of the low refractive index layer 450) (e.g., increasing linearly or non-linearly). In some embodiments, the fluorine content per unit volume in the matrix portion 451 increases with increasing distance from the first light-emitting device to the third light-emitting device.

[0106] Variations in the fluorine content in the matrix portion 451 can be examined using various suitable methods. For example, variations in the fluorine content (e.g., fluorine content per unit volume) in the thickness direction (Z-axis direction) of the matrix portion 451 can be measured using time-of-flight secondary ion mass spectrometry (TOF-SIMS).

[0107] As described above, in the thermosetting process, when fluorine moves near the air, multiple particles 453 move in the opposite direction (-Z-axis direction) to the direction in which the fluorine moves. Therefore, the number of particles 453 per unit volume in the first portion P1 of the low-refractive-index layer 450 away from (e.g., away along the +Z-axis direction) of the first to third light-emitting devices is less than the number of particles 453 per unit volume in the second portion P2 of the low-refractive-index layer 450 near (e.g., near the -Z-axis direction) of the first to third light-emitting devices. For example, the number of particles 453 per unit volume in the first portion P1 of the low-refractive-index layer 450 away from (e.g., away along the +Z-axis direction) of the first to third light-emitting devices is less than the number of particles 453 per unit volume in the second portion P2, which is closer to the first to third light-emitting devices than the first portion P1 of the low-refractive-index layer 450. For example, the number of multiple particles 453 per unit volume in the low refractive index layer 450 can be reduced (e.g., linearly or non-linearly) along the +Z axis direction (e.g., from the bottom surface of the low refractive index layer 450 to the top surface of the low refractive index layer 450).

[0108] exist Figure 1 In this context, particles 453 are almost entirely absent in the first portion P1 of the low-refractive-index layer 450, which is located away from (e.g., away from) the first to the third light-emitting devices. However, as shown in the cross-sectional view illustrating a part of a display device according to another embodiment... Figure 4 As shown, some particles 453 may be included in the first portion P1 of the low refractive index layer 450. This is because, when the amount of fluorine added to the material used to form the low refractive index layer 450 increases to form the low refractive index layer 450, the thickness of the first portion P1 including the fluorine may increase.

[0109] In the above embodiment, the matrix portion 451 is integrally formed from the bottom surface of the low refractive index layer 450 near (e.g., near along the -Z-axis direction) the first light-emitting device to the third light-emitting device, to the top surface of the low refractive index layer 450 away from (e.g., away along the +Z-axis direction) the first light-emitting device to the third light-emitting device. For example, there is no interface between the first portion P1 and the second portion P2. This is because the first portion P1 and the second portion P2 are not formed by a separate process.

[0110] Figure 5 This is a cross-sectional view showing a portion of a display device according to another embodiment. The display device according to this embodiment is positioned at the location of the cover layer 403 and at the locations of the first portion P1 and the second portion P2 of the low refractive index layer 450. Figure 1 The display devices are different. For example... Figure 1 and Figure 5 As shown, the display device according to this embodiment may also be inclined in the direction of the inner surface of the through hole of the barrier layer 401 or the inner surface of the through hole of the black matrix 405. Figure 1 The display devices are different.

[0111] In the display device according to this embodiment, a light-transmitting layer 415, a second color quantum dot layer 425, and a third color quantum dot layer 435 are disposed on an encapsulation layer 500. A low-refractive-index layer 450 is disposed on the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435. For example, the low-refractive-index layer 450 is disposed on the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 to correspond to the first light-emitting device of the first pixel PX1, the second light-emitting device of the second pixel PX2, and the third light-emitting device of the third pixel PX3. The low-refractive-index layer 450 includes a matrix portion 451 and a plurality of particles 453 in the matrix portion 451. The first portion P1 of the low-refractive-index layer 450 adjacent to (e.g., adjacent along the -Z-axis direction) the first light-emitting device of the first pixel PX1, the second light-emitting device of the second pixel PX2, and the third light-emitting device of the third pixel PX3 (e.g., the matrix portion 451 of the first portion P1 of the low-refractive-index layer 450) includes fluorine.

[0112] A first color filter layer 413, a second color filter layer 423, and a third color filter layer 433 are disposed on a low-refractive-index layer 450. More specifically, the first color filter layer 413 is disposed on the low-refractive-index layer 450 to correspond to a first light-emitting device located in a first pixel PX1, the second color filter layer 423 is disposed on the low-refractive-index layer 450 to correspond to a second light-emitting device located in a second pixel PX2, and the third color filter layer 433 is disposed on the low-refractive-index layer 450 to correspond to a third light-emitting device located in a third pixel PX3. For example, the first color filter layer 413 is disposed on the first pixel electrode 311 of the first light-emitting device located in the first pixel PX1, the second color filter layer 423 is disposed on the second pixel electrode 321 of the second light-emitting device located in the second pixel PX2, and the third color filter layer 433 is disposed on the third pixel electrode 331 of the third light-emitting device located in the third pixel PX3. Therefore, when viewed in a direction orthogonal to or perpendicular to the substrate 100 (Z-axis direction) (e.g., when viewed in a planar view), the first color filter layer 413 is superimposed on the first pixel electrode 311, the second color filter layer 423 is superimposed on the second pixel electrode 321, and the third color filter layer 433 is superimposed on the third pixel electrode 331.

[0113] A capping layer 403 is disposed between the low refractive index layer 450 and the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433. The capping layer 403 can be integrally formed as a first light-emitting device corresponding to the first pixel PX1, the second light-emitting device corresponding to the second pixel PX2, and the third light-emitting device corresponding to the third pixel PX3. The capping layer 403 may include (e.g., is) an inorganic material, such as silicon oxide, silicon nitride, and / or silicon oxynitride.

[0114] The refractive index of the low-refractive-index layer 450 is lower than that of the layer below it. Figure 5In the display device, the refractive index of the low-refractive-index layer 450 is lower than the refractive index of each of the second color quantum dot layer 425 and the third color quantum dot layer 435 below the low-refractive-index layer 450. The refractive index of each of the second color quantum dot layer 425 and the third color quantum dot layer 435 may be about 1.7. The refractive index of the low-refractive-index layer 450 is lower than the refractive index of each of the second color quantum dot layer 425 and the third color quantum dot layer 435, and may be in the range of, for example, from about 1.1 to about 1.3. Because the refractive index of the low-refractive-index layer 450 is lower than that of the layers below it, a portion of the light traveling from the second color quantum dot layer 425 and the third color quantum dot layer 435 below the low-refractive-index layer 450 to the low-refractive-index layer 450 is totally internally reflected at the interfaces (e.g., the interface between the second color quantum dot layer 425 and the low-refractive-index layer 450 and the interface between the third color quantum dot layer 435 and the low-refractive-index layer 450) and travels back into the second color quantum dot layer 425 and the third color quantum dot layer 435.

[0115] In the second pixel PX2, totally internally reflected light travels toward the second color quantum dot layer 425. When the totally internally reflected light has already been converted by the second color quantum dot layer 425 into light with a wavelength of about 495 nm to about 570 nm, the light is reflected again at the second pixel electrode 321 (e.g., on the second pixel electrode 321) or the counter electrode 305 (e.g., on the counter electrode 305) below the second color quantum dot layer 425, passes through the low refractive index layer 450 again, and is emitted to the outside. When the totally internally reflected light has a wavelength of about 450 nm to about 495 nm and passes through (e.g., and has already passed through) the second color quantum dot layer 425 without being converted by the second color quantum dot layer 425 into light with a wavelength of about 495 nm to about 570 nm, the totally internally reflected light can pass through the second color quantum dot layer 425 again and can be converted by the second color quantum dot layer 425 into light with a wavelength of about 495 nm to about 570 nm. Next, the light is reflected at the second pixel electrode 321 (e.g., on the second pixel electrode 321) or the counter electrode 305 (e.g., on the counter electrode 305) below the second color quantum dot layer 425, passes through the low refractive index layer 450 again, and is emitted to the outside.

[0116] In the third pixel PX3, totally internally reflected light travels toward the third color quantum dot layer 435. When the totally internally reflected light has been converted by the third color quantum dot layer 435 to have a wavelength of about 630 nm to about 780 nm, the light is reflected at the third pixel electrode 331 (e.g., on the third pixel electrode 331) or the counter electrode 305 (e.g., on the counter electrode 305) below the third color quantum dot layer 435, passes through the low refractive index layer 450 again, and is emitted to the outside. When the totally internally reflected light has a wavelength of about 450 nm to about 495 nm and passes through (e.g., has passed through) the third color quantum dot layer 435 without being converted by the third color quantum dot layer 435 to have a wavelength of about 630 nm to about 780 nm, the totally internally reflected light can pass through the third color quantum dot layer 435 again and can be converted by the third color quantum dot layer 435 to have a wavelength of about 630 nm to about 780 nm. Next, the light is reflected at the third pixel electrode 331 (e.g., on the third pixel electrode 331) or the counter electrode 305 (e.g., on the counter electrode 305) below the third color quantum dot layer 435, passes through the low refractive index layer 450 again, and is emitted to the outside.

[0117] In the display device according to this embodiment, luminous efficiency can be significantly improved because the light generated by the second pixel PX2 or the third pixel PX3 is minimized or prevented from being emitted to the outside without being converted by the second color quantum dot layer 425 or the third color quantum dot layer 435. For this purpose, as described above, the low refractive index layer 450 may have a lower refractive index than the capping layer 403 (ranging from about 1.4 to about 1.5). In some embodiments, the low refractive index layer 450 may have a lower refractive index than each of the refractive indices of the second color quantum dot layer 425 and the third color quantum dot layer 435, each of which may be about 1.7. For example, the refractive index of the low refractive index layer 450 may be in the range of about 1.1 to about 1.3. The low refractive index layer 450 includes a matrix portion 451 and a plurality of particles 453 in the matrix portion 451.

[0118] The matrix portion 451 may include (e.g., is) a polymeric material. The matrix portion 451 may include (e.g., is) at least one selected from acrylic polymers, silicone polymers, polyurethane polymers, and imide polymers. For example, the matrix portion 451 may include (e.g., is) any one polymeric material selected from acrylic polymers, silicone polymers, polyurethane polymers, and imide polymers, or a combination of multiple selected polymeric materials. Additionally, the matrix portion 451 may include (e.g., is) at least one selected from siloxane polymers, silsesquioxane polymers, fluorine-substituted acrylic polymers, fluorine-substituted silicone polymers, fluorine-substituted polyurethane polymers, and fluorine-substituted imide polymers. The matrix portion 451 may be formed from siloxanes, acrylic, polyimides, polyurethanes, and / or epoxy resins. The matrix portion 451 may be formed by curing polymeric resins such as siloxanes, acrylic, polyimides, polyurethanes, and / or epoxy resins in a high-temperature process or a UV treatment process.

[0119] The plurality of particles 453 in the matrix portion 451 may be silicon dioxide. A coating layer formed of an inorganic material may be present on the surface of the plurality of particles 453. The coating layer may include, for example, silicon dioxide and / or magnetite (Fe3O4). In some embodiments, the plurality of particles 453 may be hollow particles filled with air. When the plurality of particles 453 are hollow particles, the plurality of particles 453 may include, for example, silicon dioxide, acrylic, polyimide, polyurethane, styrene and / or epoxy resin. The refractive index of the plurality of particles 453 may, for example, be equal to or greater than 1.1 and equal to or less than 1.3. The refractive index of the low refractive index layer 450 may be equal to or greater than 1.1 and equal to or less than 1.3 by adjusting the average diameter of each of the plurality of particles 453 included in the low refractive index layer 450 to be equal to or greater than 20 nm and equal to or less than 150 nm.

[0120] The first portion P1 of the low-refractive-index layer 450 adjacent to (e.g., adjacent along the -Z-axis direction) of the first light-emitting device, the second light-emitting device, and the third light-emitting device (e.g., the matrix portion 451 of the first portion P1 of the low-refractive-index layer 450) comprises fluorine. Fluorine is a hydrophobic material.

[0121] Figures 6 to 9 It shows the manufacturing process. Figure 5 A cross-sectional view of the manufacturing process of the display device.

[0122] like Figure 6As shown, a black matrix 405 and / or a first color filter layer 413, a second color filter layer 423, and a third color filter layer 433 are formed on a support substrate 10 made of glass or the like. A capping layer 403 is formed of silicon oxide, silicon nitride, and / or silicon oxynitride to cover the black matrix 405 and / or the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433. After forming the capping layer 403, a material for forming a low refractive index layer 450 is applied to the capping layer 403. The material for forming the low refractive index layer 450 may contain 80 wt% solvent and 20 wt% solids. Diethylene glycol ethyl methyl ether (MEDG) and / or propylene glycol methyl ether acetate (PGMEA) may be used as solvents. 50 wt% of the solids may be a resin, and the remaining 50 wt% of the solids may be multiple particles 453 and a small amount of curing agent and / or dispersant. When the plurality of particles 453 is less than 40 wt% of the solid composition, the refractive index of the low refractive index layer 450 may not be sufficiently reduced, and when the plurality of particles 453 is greater than 70 wt% of the solid composition, the bonding force with the matrix portion 451 may be insufficient and / or the dispersibility may be insufficient. Therefore, the plurality of particles 453 may be equal to or greater than 40 wt% and equal to or less than 70 wt% of the solid composition, and preferably may be about 50 wt%.

[0123] The material used to form the low refractive index layer 450 does not need to be used directly; the final material for forming the low refractive index layer 450 can be prepared by adding fluorine to the material used to form the low refractive index layer 450. When the liquid material for forming the low refractive index layer 450 is applied to the capping layer 403 (e.g., applied onto the capping layer 403), as... Figure 6 As shown, multiple particles 453 are substantially uniformly dispersed in the material used to form the low refractive index layer 450.

[0124] Next, a thermosetting process is performed. First, a pre-baking process can be performed at 100°C for approximately 50 to 100 seconds. During this process, most of the solvent is removed. Additionally, the fluorine in the material used to form the low-refractive-index layer 450 moves away from the capping layer 403. Fluorine is hydrophobic and therefore moves closer to the air. For reference, when the fluorine moves closer to the air, multiple particles 453 move in the opposite direction to the direction in which the fluorine moves. After the pre-baking, a primary curing process can be performed at 180°C for approximately 30 minutes.

[0125] After this process, such as Figure 7 As shown, the first portion P1 of the low refractive index layer 450, away from the capping layer 403 (e.g., the matrix portion 451 of the first portion P1 of the low refractive index layer 450), comprises fluorine. Next, as... Figure 8As shown, a light-transmitting layer 415, a second-color quantum dot layer 425, and a third-color quantum dot layer 435 are formed on a low-refractive-index layer 450. Since the process of forming the light-transmitting layer 415, the second-color quantum dot layer 425, and the third-color quantum dot layer 435 uses a solution, it is useful (e.g., necessary) to minimize or prevent the solution from penetrating into the low-refractive-index layer 450. This is because voids, etc., exist as empty spaces in the matrix portion 451 of the low-refractive-index layer 450, and when the solution penetrates into the low-refractive-index layer 450, the solution fills these voids, thereby increasing the refractive index of the low-refractive-index layer 450.

[0126] Therefore, after forming the low refractive index layer 450, it is conceivable that an additional capping layer is formed on the top surface of the low refractive index layer 450 using silicon oxide, silicon nitride, and / or silicon oxynitride. However, in this case, because the process of forming the additional capping layer has to be performed, the time spent manufacturing the display device increases and the defect rate increases.

[0127] However, in the display device according to this embodiment, such as Figure 7 and Figure 8 As shown, the first portion P1 of the low refractive index layer 450, away from the capping layer 403 (e.g., the matrix portion 451 of the first portion P1 of the low refractive index layer 450), comprises fluorine. Fluorine is a hydrophobic material. Therefore, the first portion P1 of the low refractive index layer 450 is hydrophobic. Thus, even when a solution is used in a subsequent process after the formation of the low refractive index layer 450, solution penetration into the first portion P1 of the low refractive index layer 450 can be prevented or reduced. Therefore, after the formation of the low refractive index layer 450, an increase in the refractive index of the low refractive index layer 450 can be effectively prevented, or an increase in the refractive index of the low refractive index layer 450 can be reduced or minimized. The thickness of the first portion P1 can be in the range, for example, from about 10 nm to about 1000 nm.

[0128] When the organic material layer and the inorganic material layer come into contact with each other, stress may occur at the interface, and delamination may occur between the organic material layer and the inorganic material layer. However, in the display device according to this embodiment, no cover layer of inorganic material is added between the low refractive index layer 450, which is an organic material layer, and the second color quantum dot layer 425 and the third color quantum dot layer 435, which are also organic material layers. Therefore, delamination and other issues caused by stress at the interface can be effectively prevented or reduced.

[0129] After forming the light-transmitting layer 415, the second-color quantum dot layer 425, and the third-color quantum dot layer 435 on the low-refractive-index layer 450, as Figure 9 As shown, the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 are positioned facing the encapsulation layer 500. For example, the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435 can be in contact with the encapsulation layer 500, such that the carrier substrate 10 (e.g., in the +Z axis direction, as shown) is in contact with the encapsulation layer 500. Figure 9 (As shown) is the top layer. When the supporting substrate 10 is removed, it can be manufactured as follows: Figure 5 The display device shown. Various suitable modifications can be made to facilitate the removal of the carrier substrate 10. For example, a sacrificial layer can be provided between the carrier substrate 10 and the first color filter layer 413, the second color filter layer 423, and the third color filter layer 433. The carrier substrate 10 may not be removed, but can instead be used as an encapsulation substrate.

[0130] In the display device according to this embodiment, the fluorine content per unit volume in the first portion P1 of the low refractive index layer 450 (e.g., the matrix portion 451 of the first portion P1 of the low refractive index layer 450) is greater than the fluorine content per unit volume in the second portion P2 of the low refractive index layer 450 (e.g., the matrix portion 451 of the second portion P2 of the low refractive index layer 450) which is farther away from the first light-emitting device to the third light-emitting device. The first portion P1 may be above the first light-emitting device to the third light-emitting device, and the second portion P2 may be above the first portion P1, such that the first portion P1 is between the first light-emitting device to the third light-emitting device and the second portion P2. In some embodiments, the fluorine content per unit volume in the first portion P1 of the low refractive index layer 450 (e.g., the matrix portion 451 of the first portion P1 of the low refractive index layer 450) is greater than the fluorine content per unit volume in the second portion P2 (e.g., the matrix portion 451 of the second portion P2 of the low refractive index layer 450), and the second portion P2 is farther away from the first light-emitting device to the third light-emitting device than the first portion P1 of the low refractive index layer 450.

[0131] As described above, in the process of forming the low refractive index layer 450, the fluorine in the material used to form the low refractive index layer 450 is in a direction away from the capping layer 403. Figure 5 The fluorine content per unit volume in the matrix portion 451 increases as it moves along the Z-axis direction. Therefore, the closer to the first to third light-emitting devices, the higher the fluorine content per unit volume in the matrix portion 451. For example, the fluorine content per unit volume in the matrix portion 451 can vary as it moves from the portion of the matrix portion 451 away from the first to third light-emitting devices toward the first to third light-emitting devices (e.g., in the Z-axis direction). Figure 5 (As shown in the -Z axis direction) and increases. For example, the fluorine content per unit volume in the matrix portion 451 can increase along the direction toward the first light-emitting device to the third light-emitting device. For example, as Figure 5 and Figure 9 As shown, the fluorine content per unit volume in the matrix portion 451 can increase (e.g., linearly or non-linearly) along the -Z axis direction (e.g., from the upper surface of the low refractive index layer 450 to the bottom surface of the low refractive index layer 450). In some embodiments, the fluorine content per unit volume in the matrix portion 451 increases as the distance from the first light-emitting device to the third light-emitting device decreases.

[0132] As described above, in the thermosetting process, when fluorine moves near the air, multiple particles 453 move in the opposite direction to the direction in which the fluorine moves. Figure 5 It moves along the +Z axis direction. Therefore, the low refractive index layer 450 moves closer (e.g., as...) Figure 5 The number of particles 453 per unit volume in the first portion P1 of the first to third light-emitting devices (approaching along the -Z axis) is less than that in the low-refractive-index layer 450 (e.g., as...) Figure 5 The number of multiple particles 453 per unit volume in the second portion P2 of the first to third light-emitting devices (moving away from the first light-emitting device along the +Z axis). For example, the proximity of the low-refractive-index layer 450 (e.g., as...). Figure 5 The number of multiple particles 453 per unit volume in the first part P1 (approaching the first to third light-emitting devices along the -Z axis) is less than the number of multiple particles 453 per unit volume in the second part P2. The second part P2 is farther from the first to third light-emitting devices than the first part P1 of the low refractive index layer 450 is from the first to third light-emitting devices.

[0133] For reference, such as Figures 6 to 8 As shown, a first color filter layer 413, a second color filter layer 423, and a third color filter layer 433, a black matrix 405, a light-transmitting layer 415, a second color quantum dot layer 425, a third color quantum dot layer 435, and a barrier layer 401 are formed on a substrate 10. For example, the barrier layer 401 is formed by forming layers on the substrate 10 and forming vias in those layers. In this case, during the process of forming the vias, the upper portion of the layer in which the vias are formed is etched more than the lower portion near the substrate 10. For example, as... Figures 6-8 As shown, the through-holes in the barrier layer 401 may have a width and / or planar area at the upper surface that is larger than the width and / or planar area at the lower surface. Therefore, the area of ​​the surface of the barrier layer 401 closest to the support substrate 10 is larger than the area of ​​the surface of the barrier layer 401 furthest from the support substrate 10. For example, as... Figures 6-8 As shown, the planar area of ​​the lower surface of the barrier layer 401 can be larger than the planar area of ​​the upper surface of the barrier layer 401. Therefore, in Figure 5In a display device, the area of ​​the surface of the barrier layer 401 that is close to (e.g., close to) the substrate 100 along the -Z-axis direction can be smaller than the area of ​​the surface of the barrier layer 401 that is far from (e.g., far from) the substrate 100 along the +Z-axis direction. For example, as Figure 5 and Figure 9 As shown, the planar area of ​​the upper surface of the barrier layer 401 can be greater than the planar area of ​​the lower surface of the barrier layer 401.

[0134] However, in Figure 1 In the display device, because the barrier layer 401 is formed on the encapsulation layer 500, the area of ​​the surface of the barrier layer 401 that is close to (e.g., close to) the substrate 100 along the -Z-axis direction can be larger than the area of ​​the surface of the barrier layer 401 that is far from (e.g., far from) the substrate 100 along the +Z-axis direction. For example, the planar area of ​​the lower surface of the barrier layer 401 can be larger than the planar area of ​​the upper surface of the barrier layer 401. For this reason, Figure 5 Display devices and Figure 1 The display devices may have different inclination directions on the inner surface of the through-hole of the blocking layer 401 or the inner surface of the through-hole of the black matrix 405. For example, as Figure 1 As shown in the embodiments, the normal direction or perpendicular direction of the side surface of the forming via of the barrier layer 401 can have a Z-axis component in the +Z-axis direction. Additionally, as... Figure 5 As shown in the embodiment, the normal direction of the side surface of the forming via of the barrier layer 401 can have a Z-axis component in the -Z-axis direction.

[0135] exist Figure 5 In this context, particles 453 are almost entirely absent in the first portion P1 of the low-refractive-index layer 450, near (e.g., near along the -Z-axis direction) the first to third light-emitting devices. However, as shown in the cross-sectional view illustrating a display device according to another embodiment... Figure 10 As shown, some particles 453 may be included in the first portion P1 of the low refractive index layer 450. This is because, when the amount of fluorine added to the material used to form the low refractive index layer 450 is increased to form the low refractive index layer 450, the thickness of the first portion P1 including the fluorine may increase.

[0136] When the carrier substrate 10 is not removed and is used as an encapsulation substrate, the encapsulation layer 500 may not be required. Therefore, as shown in the cross-sectional view illustrating a part of a display device according to another embodiment... Figure 11As shown, instead of an encapsulation layer, filler 600 can be provided between the counter electrode 305 and the light-transmitting layer 415, the second color quantum dot layer 425, and the third color quantum dot layer 435. Any suitable polymer resin can be used as filler 600. For example, polyvinyl alcohol, polyvinylpyrrolidone, polyester, polyolefin, methyl methacrylate, polycarbonate, acrylonitrile, cellulose acetate, epoxy resin, and / or polyurethane can be used.

[0137] In the above embodiment, the matrix portion 451 is integrally formed from the bottom surface of the low refractive index layer 450 near (e.g., near along the -Z-axis direction) the first to third light-emitting devices to the top surface of the low refractive index layer 450 away from (e.g., away along the +Z-axis direction) the first to third light-emitting devices. For example, the bottom surface of the low refractive index layer 450 may face the first to third light-emitting devices, and the top surface of the low refractive index layer 450 may face the first to third light-emitting devices relatively away from them. For example, there may be no interface between the first portion P1 and the second portion P2. This is because the first portion P1 and the second portion P2 are not formed by a separate process.

[0138] According to one or more embodiments, a display device with high luminous efficiency and a simplified structure can be provided. However, this disclosure is not limited to such aspects.

[0139] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features and / or aspects within each embodiment should generally be considered applicable to other similar features and / or aspects in other embodiments, respectively. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various suitable changes in form and detail may be made therein without departing from the spirit and scope as defined by the claims and their equivalents.

Claims

1. A display device, the display device comprising: Base; The first light-emitting device, the second light-emitting device, and the third light-emitting device all include a first color emitting layer and are located on the substrate; The second color quantum dot layer is located above the second light-emitting device; The third color quantum dot layer is located above the third light-emitting device; A low refractive index layer is located above the second color quantum dot layer and the third color quantum dot layer to correspond to the first light-emitting device to the third light-emitting device, and includes a matrix portion and a plurality of particles in the matrix portion, wherein a first portion of the matrix portion away from the first light-emitting device to the third light-emitting device includes fluorine; A first color filter layer is located above the low refractive index layer to correspond to the first light-emitting device; A second color filter layer is located above the low-refractive-index layer to correspond to the second light-emitting device; and A third color filter layer is located above the low-refractive-index layer to correspond to the third light-emitting device. Wherein, the fluorine content per unit volume of the first portion of the matrix portion is greater than the fluorine content per unit volume of the second portion of the matrix portion, and the second portion of the matrix portion is closer to the first light-emitting device to the third light-emitting device than the first portion of the matrix portion. Wherein, the number of the plurality of particles per unit volume in the first portion of the low-refractive-index layer away from the first light-emitting device to the third light-emitting device is less than the number of the plurality of particles per unit volume in the second portion of the low-refractive-index layer, and the second portion of the low-refractive-index layer is closer to the first light-emitting device to the third light-emitting device than the first portion of the low-refractive-index layer, and The matrix portion is integrally formed from the bottom surface of the low-refractive-index layer near the first light-emitting device to the bottom surface of the third light-emitting device, and from the top surface of the low-refractive-index layer away from the first light-emitting device to the top surface of the third light-emitting device.

2. The display device according to claim 1, further comprising a light-transmitting layer located above the first light-emitting device, wherein, The low refractive index layer is located above the light-transmitting layer.

3. The display device according to claim 1, wherein, The further away from the first light-emitting device to the third light-emitting device, the greater the fluorine content per unit volume in the matrix portion.

4. The display device according to claim 1, wherein, The second portion of the matrix portion does not contain fluorine, and the second portion of the matrix portion is closer to the first light-emitting device to the third light-emitting device than the first portion of the matrix portion.

5. The display device according to claim 1, wherein, The first portion of the low-refractive-index layer from the first light-emitting device to the third light-emitting device does not include the plurality of particles.

6. The display device according to claim 1, further comprising a cover layer located between the low refractive index layer and the second color quantum dot layer and the third color quantum dot layer, corresponding to the first light-emitting device to the third light-emitting device.

7. A display device, the display device comprising: Base; The first light-emitting device, the second light-emitting device, and the third light-emitting device all include a first color emitting layer and are located on the substrate; The second color quantum dot layer is located above the second light-emitting device; The third color quantum dot layer is located above the third light-emitting device; A low refractive index layer is located above the second color quantum dot layer and the third color quantum dot layer to correspond to the first light-emitting device to the third light-emitting device, and includes a matrix portion and a plurality of particles in the matrix portion, wherein a first portion of the matrix portion near the first light-emitting device to the third light-emitting device includes fluorine; A first color filter layer is located above the low refractive index layer to correspond to the first light-emitting device; A second color filter layer is located above the low-refractive-index layer to correspond to the second light-emitting device; and A third color filter layer is located above the low-refractive-index layer to correspond to the third light-emitting device. Wherein, the fluorine content per unit volume of the first portion of the matrix portion is greater than the fluorine content per unit volume of the second portion of the matrix portion, and the second portion of the matrix portion is farther from the first light-emitting device to the third light-emitting device than the first portion of the matrix portion is from the first light-emitting device to the third light-emitting device. Wherein, the number of the plurality of particles per unit volume in the first portion of the low refractive index layer is less than the number of the plurality of particles per unit volume in the second portion of the low refractive index layer, and the second portion of the low refractive index layer is farther from the first light-emitting device to the third light-emitting device than the first portion of the low refractive index layer is from the first light-emitting device to the third light-emitting device. The matrix portion is integrally formed from the bottom surface of the low-refractive-index layer near the first light-emitting device to the bottom surface of the third light-emitting device, and from the top surface of the low-refractive-index layer away from the first light-emitting device to the top surface of the third light-emitting device.

8. The display device according to claim 7, further comprising a light-transmitting layer located above the first light-emitting device, wherein, The low refractive index layer is located above the light-transmitting layer.

9. The display device according to claim 7, wherein, The fluorine content per unit volume of the first portion of the matrix is ​​greater than the fluorine content per unit volume of the second portion of the matrix, which is located away from the first light-emitting device and extends to the third light-emitting device.

10. The display device according to claim 7, wherein, The closer to the first to the third light-emitting device, the greater the fluorine content per unit volume in the matrix portion.

11. The display device according to claim 7, wherein, The second portion of the matrix portion does not contain fluorine, and the second portion of the matrix portion is farther from the first light-emitting device to the third light-emitting device than the first portion of the matrix portion is.

12. The display device according to claim 7, wherein, The number of the plurality of particles per unit volume of the low-refractive-index layer in the first portion near the first light-emitting device to the third light-emitting device is less than the number of the plurality of particles per unit volume of the low-refractive-index layer in the second portion away from the first light-emitting device to the third light-emitting device.

13. The display device according to claim 7, wherein, The first portion of the low-refractive-index layer from the first light-emitting device to the third light-emitting device does not include the plurality of particles.

14. The display device according to claim 7, further comprising a cover layer located between the low refractive index layer and the first color filter layer to the third color filter layer, corresponding to the first light-emitting device to the third light-emitting device.

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