Substrate processing method and substrate processing apparatus

Abstract

This invention provides a substrate processing method and a substrate processing apparatus, capable of determining whether the liquid treatment result is satisfactory for each product substrate. One aspect of the substrate processing method includes a liquid treatment step, a detection step, a generation step, and a judgment step. In the liquid treatment step, a processing unit performs liquid treatment on the substrate. In the detection step, multiple sensors provided in the processing unit are used to detect the temperature of the center portion of the substrate and the temperature of the ends of the substrate during liquid treatment. In the generation step, temperature distribution information representing the in-plane temperature distribution of the substrate during liquid treatment is generated based on one or more parameter values ​​specifying liquid treatment conditions, the temperature of the center portion of the substrate detected in the detection step, and the temperature of the ends of the substrate. In the judgment step, the result of the liquid treatment is determined based on the temperature distribution information.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method and a substrate processing apparatus. Background Technology

[0002] Previously, a substrate processing apparatus was known to process a substrate by supplying a processing liquid to the rotating substrate while rotating the substrate, such as a semiconductor wafer.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-92387 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for appropriately controlling whether the liquid treatment performed on each product substrate yields satisfactory results.

[0008] Solution for solving the problem

[0009] One aspect of the substrate processing method disclosed herein includes a liquid treatment step, a detection step, a generation step, and a judgment step. In the liquid treatment step, a processing unit is used to liquid treat the substrate. The processing unit includes a substrate holding mechanism for horizontally holding the substrate and a liquid supply unit for spraying the liquid treatment solution toward the substrate held by the substrate holding mechanism. In the detection step, multiple sensors provided in the processing unit are used to detect the temperature of the center portion of the substrate and the temperature of the ends of the substrate during liquid treatment, respectively. In the generation step, temperature distribution information representing the in-plane temperature distribution of the substrate during liquid treatment is generated based on one or more parameter values ​​specifying liquid treatment conditions, the temperature of the center portion of the substrate detected in the detection step, and the temperature of the ends of the substrate. In the judgment step, the result of the liquid treatment is determined to be satisfactory based on the temperature distribution information.

[0010] The effects of the invention

[0011] According to this disclosure, it is possible to properly determine whether the liquid treatment results for each product substrate are satisfactory. Attached Figure Description

[0012] Figure 1 This is a diagram showing the outline structure of the substrate processing system involved in the implementation method.

[0013] Figure 2 This is a diagram showing the structure of the processing unit involved in the implementation method.

[0014] Figure 3 This is a diagram illustrating an example of the configuration of the temperature sensor involved in the implementation method.

[0015] Figure 4 This is a diagram showing the structure of the displacement fluid supply unit involved in the embodiment.

[0016] Figure 5 This is a block diagram illustrating the structure of the control device involved in the implementation method.

[0017] Figure 6 This is a flowchart illustrating the liquid processing process performed by the processing unit involved in the implementation method.

[0018] Figure 7 This is a diagram illustrating an example of information collection involved in an implementation method.

[0019] Figure 8 This is a diagram illustrating an example of temperature distribution information involved in the implementation method.

[0020] Figure 9 This is a diagram illustrating an example of etch rate conversion processing.

[0021] Figure 10 This is a diagram illustrating an example of determining whether there are differences between wafers.

[0022] Figure 11 This is a diagram illustrating an example of determining whether there are differences between processing units.

[0023] Figure 12 This is a diagram illustrating an example of determining whether there are differences between substrate groups.

[0024] Figure 13 It is a flowchart illustrating the monitoring process involved in the implementation method.

[0025] Figure 14 It means Figure 13 The flowchart shows the first example of the determination process in step S103.

[0026] Figure 15 It means Figure 13 The flowchart for the second example of the determination process in step S103 is shown.

[0027] Figure 16 It means Figure 13 The flowchart for the third example of the determination process in step S103 is shown. Detailed Implementation

[0028] The embodiments of the substrate processing method and substrate processing apparatus disclosed in this application will now be described in detail with reference to the accompanying drawings. However, the disclosed substrate processing method and substrate processing apparatus are not limited by the embodiments shown below.

[0029] In liquid processing technologies that process semiconductor wafers and other substrates (hereinafter referred to as "wafers") by supplying a processing solution, the wafer temperature during liquid processing is one of the important factors affecting the process results. Therefore, it is desirable to properly control the wafer temperature during liquid processing in order to more accurately determine whether the process results are satisfactory.

[0030] Previously, a known method for determining wafer temperature involved liquid processing a test wafer with a built-in sensor using the same process as the product wafer, and estimating the temperature of the product wafer during liquid processing based on the resulting temperature data. However, this method does not allow for individual measurement of the temperature of each product wafer during liquid processing.

[0031] Therefore, there is a need for a technique that can properly control the quality of liquid treatment results for product wafers by controlling the temperature of the product wafers during liquid treatment for each product wafer.

[0032] The substrate processing system described in the embodiments uses one or more temperature sensors disposed in the processing unit to detect the local temperature (e.g., the temperature at the center, the temperature at the end, etc.) of the product wafer during liquid processing. Furthermore, the substrate processing system described in the embodiments generates temperature distribution information representing the in-plane temperature distribution of the product wafer during liquid processing based on the detected temperature and one or more parameter values ​​specifying the liquid processing conditions.

[0033] Furthermore, the substrate processing system involved in the implementation method determines whether the liquid treatment result is good based on the generated temperature distribution information.

[0034] Specifically, the substrate processing system described in the embodiments determines, based on the generated temperature distribution information, whether the results of each process (e.g., etching, drying, etc.) included in a series of liquid processing steps are satisfactory for each product wafer. Furthermore, the substrate processing system described in the embodiments can also determine whether there are differences between wafers, between processing units, and between substrate groups as a result of liquid processing.

[0035] In this way, in the substrate processing system according to the embodiment, by measuring the in-plane temperature distribution of the product wafer during liquid treatment, it is possible to determine whether the liquid treatment result of each product wafer is satisfactory. Therefore, according to the substrate processing system according to the embodiment, abnormalities in the liquid treatment result and the occurrence of various differences can be detected as early as possible, thereby reducing the generation of defective wafers.

[0036] <Overview of the Substrate Processing System>

[0037] Reference Figure 1 The outline structure of the substrate processing system 1 (an example of a substrate processing apparatus) involved in the embodiment will be described below. Figure 1 This is a diagram showing the outline structure of the substrate processing system 1 according to the embodiment. Hereinafter, in order to clarify the positional relationships, the X-axis, Y-axis and Z-axis are defined as being orthogonal to each other, and the positive direction of the Z-axis is set as the vertical upward direction.

[0038] like Figure 1 As shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

[0039] The loading / unloading station 2 includes a carrier placement section 11 and a conveying section 12. Multiple carriers C are placed in the carrier placement section 11, and multiple substrates, or in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W), are horizontally housed within the multiple carriers C.

[0040] The transport section 12 is disposed adjacent to the carrier placement section 11, and the transport section 12 internally includes a substrate transport device 13 and a transfer section 14. The substrate transport device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transport device 13 can move freely in the horizontal and vertical directions, and can rotate about the vertical axis. The substrate transport device 13 uses the wafer holding mechanism to transport the wafer W between the carrier C and the transfer section 14.

[0041] Processing station 3 is arranged adjacent to conveying section 12. Processing station 3 includes conveying section 15 and multiple processing units 16. Multiple processing units 16 are arranged on both sides of conveying section 15.

[0042] The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 17 can move in the horizontal and vertical directions and can rotate about the vertical axis. The substrate transfer device 17 uses the wafer holding mechanism to transfer the wafer W between the transfer unit 14 and the processing unit 16.

[0043] Processing unit 16 performs substrate processing on the wafer W transported by substrate transport device 17. Processing unit 16 holds the transported wafer and performs substrate processing on the held wafer. Processing unit 16 supplies processing liquid to the held wafer to perform substrate processing.

[0044] The treatment solution can be, for example, an etching solution. There are no particular limitations on the etching solution; for example, HF (hydrofluoric acid), HCl (hydrochloric acid), and TMAH (tetramethylammonium hydroxide) can be used. Alternatively, the treatment solution can be a cleaning solution such as SC1 (a mixture of ammonia, hydrogen peroxide, and water) and DHF (dilute hydrofluoric acid). Furthermore, the treatment solution can also be a rinsing solution such as DIW (deionized water) or a displacement solution such as IPA (isopropanol).

[0045] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0046] Furthermore, the program can be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0047] In the substrate processing system 1 configured as described above, firstly, the substrate transport device 13 of the transport station 2 removes the product wafer W (hereinafter simply referred to as "wafer W") from the carrier C placed in the carrier placement section 11 and places it in the transfer section 14. The substrate transport device 17 of the processing station 3 removes the wafer W placed in the transfer section 14 from the transfer section 14 and transports it into the processing unit 16.

[0048] After the wafer W, which has been moved into the processing unit 16, undergoes substrate processing by the processing unit 16, the wafer W is moved out of the processing unit 16 by the substrate transfer device 17 and placed in the transfer section 14. Then, the processed wafer W, which has been placed in the transfer section 14, is returned to the carrier C of the carrier placement section 11 by the substrate transfer device 13.

[0049] <Summary of Processing Unit>

[0050] Next, refer to Figure 2 To illustrate the structure of processing unit 16. Figure 2 This is a diagram showing the structure of the processing unit 16 involved in the implementation method.

[0051] like Figure 2 As shown, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing liquid supply unit 40, a recovery cup 50, and a back supply unit 60.

[0052] The chamber 20 houses the substrate holding mechanism 30, the processing liquid supply unit 40, the recovery cup 50, and the back supply unit 60. An FFU (Fan Filter Unit) 21 is installed at the top of the chamber 20. The FFU 21 is connected to a clean gas supply source 21b via a supply line 21a. The FFU 21 causes the clean gas supplied from the clean gas supply source 21b to be ejected downwards from the top of the chamber 20, thereby forming a downward flow within the chamber 20. For example, dry air can be used as the clean gas. Alternatively, inert gases such as N2 (nitrogen) and argon can be used. Furthermore, the clean gas supplied from the clean gas supply source 21b is assumed to be adjusted to a predetermined temperature and humidity.

[0053] A valve 21c, a temperature adjustment unit 21d, and a humidity adjustment unit 21e are provided in the supply line 21a. The valve 21c is used to open and close the supply line 21a. The temperature adjustment unit 21d adjusts the temperature of the cleaning gas flowing in the supply line 21a. The humidity adjustment unit 21e adjusts the humidity of the cleaning gas flowing in the supply line 21a. These valves 21c, temperature adjustment units 21d, and humidity adjustment units 21e are provided for each processing unit 16. Therefore, the substrate processing system 1 according to the embodiment can individually adjust the temperature and humidity of the cleaning gas supplied from the FFU to the chamber 20 for each processing unit 16.

[0054] The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. Specifically, the holding portion 31 includes a plurality of gripping portions 31a, which grip the ends of the wafer W. The support portion 32 extends in the vertical direction, and its base end is supported in a manner rotatable by the driving portion 33. The holding portion 31 is horizontally supported at the front end of the support portion 32. The driving portion 33 rotates the support portion 32 about a vertical axis. The substrate holding mechanism 30 rotates the holding portion 31 supported by the support portion 32 by rotating the support portion 32 using the driving portion 33, thereby rotating the wafer W held by the holding portion 31.

[0055] The processing fluid supply unit 40 supplies various processing fluids to the wafer W. The processing fluid supply unit 40 includes a nozzle 41 disposed above the wafer W, an arm 42 supporting the nozzle 41, and a moving mechanism 43 for moving the arm 42.

[0056] Nozzle 41 is connected to liquid supply unit 70 (described later) via supply line 44a, and sprays liquid supplied from liquid supply unit 70 onto the surface of wafer W. In this embodiment, the liquid is an etching solution.

[0057] Additionally, nozzle 41 is connected to the rinsing fluid supply source 80 (described later) via supply line 44b, and sprays the rinsing fluid supplied from the rinsing fluid supply source 80 onto the surface of wafer W. In this embodiment, the rinsing fluid is DIW.

[0058] Additionally, nozzle 41 is connected to the displacement fluid supply unit 90 (described later) via supply line 44c, and sprays the displacement fluid supplied from the displacement fluid supply unit 90 onto the surface (upper surface) of wafer W. In this embodiment, the displacement fluid is IPA.

[0059] A valve 45a and a temperature regulating unit 46a are provided on the supply line 44a. The valve 45a is used to open and close the supply line 44a. The temperature regulating unit 46a adjusts the temperature of the etching solution flowing in the supply line 44a, for example, using a Peltier element or temperature-regulating water. Similarly, a valve 45c and a temperature regulating unit 46c are provided on the supply line 44c. The valve 45c is used to open and close the supply line 44c. The temperature regulating unit 46c adjusts the temperature of the IPA flowing in the supply line 44c.

[0060] A valve 45a and a temperature adjustment unit 46a are provided for each processing unit 16. Therefore, the substrate processing system 1 according to the embodiment can adjust the temperature of the etching solution supplied from the solution supply unit 70 for each processing unit 16. Similarly, a valve 45c and a temperature adjustment unit 46c are provided for each processing unit 16. Therefore, the substrate processing system 1 according to the embodiment can adjust the temperature of the IPA supplied from the replacement solution supply unit 90 for each processing unit 16. Furthermore, a valve 45b for opening and closing the supply line 44b is provided on the supply line 44b.

[0061] The recovery cup 50 is configured to surround the holding portion 31 and is used to collect the processing liquid that splashes out from the wafer W by the rotation of the holding portion 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the processing unit 16. In addition, an exhaust port 52 is formed at the bottom of the recovery cup 50 for discharging the gas supplied from the FFU 21 to the outside of the processing unit 16.

[0062] The back-side supply section 60 is disposed, for example, in a hollow section that extends through the holding section 31 and the support section 32 in the vertical direction. A flow path 61 extending in the vertical direction is formed inside the back-side supply section 60. The upper end of the flow path 61 is an ejector 62 that opens toward the back side of the wafer W.

[0063] The flow path 61 of the back-side supply section 60 is connected to the temperature-regulating liquid supply source 61b via the supply line 61a. The back-side supply section 60 sprays the temperature-regulating liquid supplied from the temperature-regulating liquid supply source 61b from the nozzle 62 toward the back side of the wafer W. In this embodiment, the temperature-regulating liquid is HDIW (Hot DIW: thermally deionized water), which is DIW heated to a predetermined temperature.

[0064] A valve 61c and a temperature adjustment unit 61d are provided on the supply line 61a. The valve 61c is used to open and close the supply line 61a. The temperature adjustment unit 61d adjusts the temperature of the temperature-regulating liquid flowing in the supply line 61a. These valves 61c and temperature adjustment units 61d are provided for each processing unit 16. Therefore, the substrate processing system 1 according to the embodiment can adjust the temperature of the temperature-regulating liquid supplied from the back supply unit 60 to the back side of the wafer W individually for each processing unit 16.

[0065] <Example of Temperature Sensor Configuration>

[0066] Reference Figure 3 This section describes an example of a temperature sensor configuration for detecting the local temperature of wafer W during liquid processing. Figure 3 This is a diagram illustrating an example of the configuration of the temperature sensor involved in the implementation method.

[0067] like Figure 3 As shown, the processing unit 16 includes a first temperature sensor 110 and a plurality of second temperature sensors 120. The first temperature sensor 110 is disposed on the nozzle 41 and is used to detect the temperature of the processing liquid inside the nozzle 41. The processing liquid ejected from the nozzle 41 is sprayed to the center of the wafer W. Therefore, the temperature of the processing liquid detected by the first temperature sensor 110 can be regarded as the temperature of the center of the wafer W during liquid processing. In addition, the first temperature sensor 110 can be disposed in the processing liquid supply unit 40 downstream of the temperature adjustment units 46a, 46c, and does not necessarily have to be disposed on the nozzle 41.

[0068] The second temperature sensor 120 is disposed on the substrate holding mechanism 30 (see reference). Figure 2 The gripping part 31a, which is provided with the wafer, is used to detect the temperature of the front end of the gripping part 31a (the contact part that contacts the wafer W). Figure 3 The diagram shows an example of a substrate holding mechanism 30 having three gripping portions 31a, and each gripping portion 31a having a second temperature sensor 120. The gripping portions 31a are in contact with the end of the wafer W. Therefore, the temperature of the gripping portion 31a detected by the second temperature sensor 120 can be regarded as the temperature of the end of the wafer W during liquid processing.

[0069] Furthermore, the processing unit 16 may include at least one second temperature sensor 120. That is, the second temperature sensor 120 may be disposed in at least one of the plurality of holding portions 31a. In addition, the second temperature sensor 120 may be disposed in a component that contacts the end of the wafer W, and is not necessarily disposed in the holding portion 31a.

[0070] <Overview of the Displacement Fluid Supply Unit>

[0071] Next, refer to Figure 4 To explain the replacement fluid supply unit 90. Figure 4 This is a diagram showing the structure of the displacement fluid supply unit 90 according to the embodiment. Figure 4 The example shown depicts a case where the replacement fluid supply unit 90 is connected to two processing units 16, but the number of processing units 16 connected to one replacement fluid supply unit 90 is not limited to this example. Furthermore, the structure of the solution supply unit 70 that supplies etching solution to the processing units 16 can also be the same as that of the replacement fluid supply unit 90.

[0072] The replacement fluid supply unit 90 includes a tank 91, a replenishment unit 92, a drain line 93, a circulation line 94, a supply line 95, and a return line 96.

[0073] Tank 91 is used to store IPA. The replenishment unit 92 supplies new IPA to tank 91. For example, when replacing the IPA in tank 91, or when the amount of IPA in tank 91 is less than the specified amount, the replenishment unit 92 supplies new IPA to tank 91. When replacing the IPA in tank 91, the drain line 93 discharges the IPA from tank 91 to the outside.

[0074] The two ends of the circulation line 94 are connected to the tank 91, allowing the IPA conveyed from the tank 91 to return to the tank 91. The circulation line 94 is configured to allow the IPA to flow to the outside of the tank 91 and then return to the tank 91 again.

[0075] A pump 81, a heater 82, a filter 83, a flow meter 84, a temperature sensor 85, and a back pressure valve 86 are installed on the circulation line 94. In the flow direction of the IPA with reference to tank 91, the pump 81, heater 82, filter 83, flow meter 84, temperature sensor 85, and back pressure valve 86 are installed in the order described from the upstream side.

[0076] Pump 81 is used to pressurize and transport the IPA in circulation line 94. The pressurized IPA circulates in circulation line 94 and returns to tank 91.

[0077] Heater 82 is located in circulation line 94 and is used to adjust the temperature of the IPA. Specifically, heater 82 heats the IPA. Heater 82 controls the amount of heating to the IPA based on a signal from control device 4, thereby adjusting the temperature of the IPA. For example, the amount of heating to the IPA by heater 82 is adjusted based on the temperature of the IPA detected by temperature sensor 85.

[0078] For example, control device 4 controls heater 82 to adjust the temperature of IPA to a predetermined temperature. The predetermined temperature is the temperature at which the IPA sprayed from the nozzle of processing liquid supply unit 40 onto wafer W during supply is a preset processing temperature. The predetermined temperature is set based on the heat capacity of filter 73 installed in supply line 95, etc.

[0079] Filter 83 removes particulate matter and other contaminants, i.e., foreign objects, from the IPA flowing in the circulation line 94. Flow meter 84 measures the flow rate of the IPA flowing in the circulation line 94. Temperature sensor 85 detects the temperature of the IPA flowing in the circulation line 94. Temperature sensor 85 is located upstream of the point in the circulation line 94 where it is connected to the supply line 95.

[0080] When the pressure of the IPA upstream of the back pressure valve 86 is higher than the specified pressure, the valve opening of the back pressure valve 86 is increased. When the pressure of the IPA upstream of the back pressure valve 86 is lower than the specified pressure, the valve opening of the back pressure valve 86 is decreased. The back pressure valve 86 has the function of maintaining the pressure of the upstream processing fluid at a specified pressure. The specified pressure is a preset pressure. The valve opening of the back pressure valve 86 is controlled by the control device 4.

[0081] The flow rate of IPA in the circulation line 94 can be adjusted by controlling the opening degree of the back pressure valve 86. That is, the back pressure valve 86 is installed in the circulation line 94 to adjust the flow rate of IPA returning to the tank 91 through the circulation line 94. Furthermore, the flow rate of IPA in the circulation line 94 can be adjusted by controlling the discharge pressure of the pump 81. The flow rate of IPA in the circulation line 94 is controlled based on the flow rate of IPA detected by the flow meter 84.

[0082] Supply line 95 is connected to circulation line 94. Supply line 95 is connected to circulation line 94, which is located downstream of temperature sensor 85 and upstream of back pressure valve 86. Multiple supply lines 95 are provided corresponding to multiple processing fluid supply units 40. Supply lines 95 are provided in such a way that they branch off from circulation line 94 and are capable of supplying IPA to processing fluid supply units 40. In addition, supply line 95 for replacement fluid supply unit 90 and supply line 44c for processing unit 16 have been described here, but these supply lines can also be a single supply line.

[0083] A flow meter 71, a pressure regulating valve 72, and a filter 73 are installed on the supply line 95. In the flow direction of IPA flowing from the circulation line 94 to the treatment liquid supply unit 40, the flow meter 71, the pressure regulating valve 72, and the filter 73 are installed in the order described from the upstream side.

[0084] Flow meter 71 measures the flow rate of IPA flowing in supply line 95. Pressure regulating valve 72 adjusts the pressure of IPA downstream of the flow meter. For example, pressure regulating valve 72 adjusts the pressure of the IPA so that the amount of IPA ejected from the nozzle of the processing fluid supply section 40 is a predetermined amount. That is, pressure regulating valve 72 adjusts the flow rate of IPA ejected from the nozzle of the processing fluid supply section 40. The predetermined amount is a preset amount, set according to the processing conditions of wafer W. Pressure regulating valve 72 adjusts the pressure of the IPA based on a signal from control device 4.

[0085] Filter 73 is located upstream of the connection point between return line 96 and supply line 95 in supply line 95. Filter 73 is located downstream of pressure regulating valve 72 in supply line 95. Filter 73 is used to remove particulate matter and other contaminants, i.e., foreign matter, contained in the IPA flowing in supply line 95.

[0086] Return line 96 is connected to supply line 95 to allow IPA to return from supply line 95 to tank 91. Return line 96 is connected to supply line 95 at a connection point between filter 73 and valve 45c. Multiple return lines 96 are provided corresponding to multiple treatment fluid supply units 40. Valve 74 is provided on return line 96.

[0087] Valve 74 is used to switch the flow of IPA in return line 96 between the presence and absence of IPA. By opening valve 74, IPA flows from supply line 95 to return line 96. The IPA flowing in return line 96 returns to tank 91. By closing valve 74, IPA does not flow to return line 96. Valve 74 is opened and closed based on a signal from control device 4.

[0088] In the flow direction of IPA in return line 96, multiple return lines 96 merge at a location further downstream of valve 74 and connect to tank 91. A temperature sensor 75 is installed on the return line 96 further downstream of the point where the multiple return lines 96 merge. The temperature sensor 75 detects the temperature of the IPA returning from return line 96 to tank 91. Alternatively, return line 96 can also be connected to circulation line 94 further downstream of back pressure valve 86.

[0089] When supplying IPA from the processing liquid supply unit 40 to the wafer W, the control device 4 closes the valve 74 provided in the return line 96 and opens the valve 45c provided in the processing unit 16. As a result, IPA does not flow into the return line 96 and is ejected from the nozzle of the processing liquid supply unit 40. On the other hand, during standby when IPA is not supplied from the processing liquid supply unit 40 to the wafer W, the control device 4 closes the valve 45c provided in the processing unit 16 and opens the valve 74 provided in the return line 96. As a result, IPA is not ejected from the nozzle of the processing liquid supply unit 40 and returns to the tank 91 via the return line 96.

[0090] In this way, in the substrate processing system 1 according to the embodiment, IPA, which is adjusted to a predetermined temperature using the displacement liquid supply unit 90, can be supplied to multiple processing units 16. Furthermore, in the substrate processing system 1 according to the embodiment, the temperature of the IPA can be individually adjusted in each processing unit 16 using the temperature adjustment unit 46c provided in each processing unit 16.

[0091] <Structure of the Control Device>

[0092] Next, refer to Figure 5 The structure of the control device 4 involved in the implementation method will be explained. Figure 5 This is a block diagram showing the structure of the control device 4 involved in the implementation method.

[0093] like Figure 5 As shown, the control device 4 according to the embodiment includes a control unit 18 and a storage unit 19.

[0094] The storage unit 19 is implemented, for example, by semiconductor memory elements such as RAM (Random Access Memory) and flash memory, or storage devices such as hard disks and optical disks. The storage unit 19 stores process information 191, collection information 192, model formula 193, temperature distribution information 194, and specification information 195.

[0095] The control unit 18 is implemented, for example, by executing various programs stored in the storage section (e.g., storage section 19) inside the control device 4 using RAM as the working area by a CPU (Central Processing Unit) or MPU (Micro Processing Unit). Alternatively, the control unit 18 can be implemented, for example, by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or FPGA (Field Programmable Gate Array).

[0096] The control unit 18 includes an action control unit 181, a collection unit 182, a monitoring unit 183, a judgment unit 184, and an anomaly response handling unit 185, and is used to implement or perform the processing functions described below. Furthermore, the internal structure of the control unit 18 is not limited to... Figure 5 The structure shown can also be other structures capable of performing substrate processing, etc., as described later. Furthermore, the connection relationships of the various processing units within the control unit 18 are not limited to... Figure 5 The connection relationships shown can also be other connection relationships.

[0097] The motion control unit 181 controls the processing unit 16 based on the process information 191 stored in the storage unit 19, thereby enabling the processing unit 16 to perform a series of liquid processing on the wafer W.

[0098] Process information 191 is information indicating the content and sequence of liquid processing performed by processing unit 16, including multiple parameter values ​​specifying the processing conditions of the liquid processing. For example, process information 191 includes parameter values ​​such as processing time, wafer W rotation speed, type of processing liquid, liquid ejection flow rate, and liquid ejection temperature. These parameter values ​​are specified for each process included in a series of liquid processing steps.

[0099] Here, refer to Figure 6 Here is an example of liquid processing performed under the control of the motion control unit 181. Figure 6 This is a flowchart illustrating the liquid processing process performed by the processing unit 16 according to the embodiment. It is executed according to process information 191. Figure 6 The series of liquid treatments shown.

[0100] First, the processing unit 16 uses the holding part 31 of the substrate holding mechanism 30 to hold the substrate transport device 17 (see reference 17) as it passes through. Figure 1 The wafer W is moved into the chamber 20. Specifically, the processing unit 16 uses a plurality of gripping parts 31a to grip the ends of the wafer W. Then, the processing unit 16 rotates the holding part 31 about the vertical axis by using the driving part 33, thereby rotating the wafer W.

[0101] Next, the processing unit 16 performs an etching process (step S01). In the etching process, firstly, the moving mechanism 43 of the processing liquid supply unit 40 is used to position the nozzle 41 above the center of the wafer W. Then, the processing unit 16 supplies etching liquid from the nozzle 41 to the surface of the rotating wafer W by opening the valve 45a. As the wafer W rotates, the etching liquid supplied to the center of the wafer W spreads across the entire surface of the wafer W. Thus, the surface of the wafer W is etched. Afterward, the processing unit 16 stops supplying etching liquid to the wafer W by closing the valve 45a.

[0102] Next, the processing unit 16 performs a rinsing process (step S02). During the rinsing process, DIW is supplied from the nozzle 41 to the surface of the rotating wafer W by opening the valve 45b. As the wafer W rotates, the DIW supplied to the center of the wafer W diffuses across the entire surface of the wafer W. As a result, any remaining etching solution on the surface of the wafer W is washed away by the DIW. Afterwards, the processing unit 16 stops supplying DIW to the wafer W by closing the valve 45b.

[0103] Next, processing unit 16 performs a displacement process (step S03). In the displacement process, IPA is supplied from nozzle 41 to the surface of the rotating wafer W by opening valve 45c. As the wafer W rotates, the IPA supplied to the center of the wafer W diffuses across the entire surface of the wafer W. Thus, DIW remaining on the surface of the wafer W is replaced by IPA. Afterwards, processing unit 16 stops supplying IPA to the wafer W by closing valve 45c.

[0104] Next, the processing unit 16 performs a drying process (step S04). During the drying process, the drive unit 33 is used to rotate the wafer W at a higher speed than in steps S01 to S03, thereby drying the wafer W. Afterwards, the wafer W is removed from the chamber 20 by the substrate transport device 17. Thus, a series of liquid processing steps for one wafer W is completed.

[0105] return Figure 5 In liquid processing, the collection unit 182 acquires temperature data from the first temperature sensor 110 of the processing unit 16 and stores the acquired temperature data as the "center temperature" item in the collection information 192 in the storage unit 19. For example, the collection unit 182 calculates the average temperature detected by the first temperature sensor 110 in each of the various processes (etching, rinsing, displacement, and drying) included in a series of liquid processes, and stores the calculated average value as the "center temperature" of the wafer W in each process in the storage unit 19.

[0106] In addition, during liquid processing, the collection unit 182 acquires temperature data from multiple second temperature sensors 120 of the processing unit 16 and stores the acquired temperature data as an "edge temperature" item in the collection information 192 in the storage unit 19. For example, the collection unit 182 calculates the average temperature detected by the second temperature sensors 120 in each process included in a series of liquid processes, and stores the calculated average value as the "edge temperature" of the wafer W in each process in the storage unit 19.

[0107] The collection unit 182 also collects information other than the aforementioned center temperature and edge temperature. For example, the collection unit 182 collects the temperature inside the chamber 20 and stores the temperature inside the chamber 20 as the "space temperature" item in the collection information 192 in the storage unit 19. The temperature inside the chamber 20 can be obtained, for example, by a temperature sensor (not shown) installed inside the chamber 20, or it can be obtained based on the set temperature of the clean gas from the clean gas supply source 21b.

[0108] Additionally, the collection unit 182 collects the humidity inside the chamber 20 and stores the humidity inside the chamber 20 as the "space humidity" item in the collection information 192 in the storage unit 19. The humidity inside the chamber 20 can be obtained, for example, by a humidity sensor (not shown) installed inside the chamber 20, or it can be obtained based on the set humidity of the cleaning gas from the cleaning gas supply source 21b.

[0109] Additionally, the collection unit 182 collects information on ejection flow rate and rotational speed from the process information 191, and stores this information as "ejection flow rate" and "rotational speed" items in the storage unit 192, respectively. Furthermore, the collection unit 182 may collect flow rate detection results from, for example, a flow meter (not shown) installed on the supply lines 44a-44c, and store this flow rate detection result as a "ejection flow rate" item in the storage unit 19. Alternatively, the collection unit 182 may also collect rotational speed detection results from, for example, a rotational speed sensor (not shown) used to detect the rotational speed of the support section 32, such as a rotary encoder, and store this rotational speed detection result as a "rotational speed" item in the storage unit 19.

[0110] In addition, the collection unit 182 collects information such as the exhaust flow rate of the chamber 20, the density of the processing liquid, and the heat capacity of the processing liquid, and stores this information as collection information 192 in the storage unit 19.

[0111] Figure 7 This is a diagram illustrating an example of information collection 192 involved in the implementation method. For example... Figure 7 As shown, the collected information 192 is information that links various items such as "Wafer ID", "Substrate Group ID", "Cell ID", "Processing Content", "Center Temperature", "Edge Temperature", "Space Temperature", "Space Humidity", "Ejection Flow Rate", and "Rotation Speed" together.

[0112] The “Wafer ID” field stores the identification information of wafer W. The “Substrate Group ID” field stores the identification information of the substrate group to which wafer W belongs. A substrate group is a manufacturing unit for product wafers. For example, sometimes 25 wafers W are referred to as a substrate group. The “Unit ID” field stores the identification information of the processing unit 16 that processed wafer W. The “Processing Content” field stores information used to identify the content of each process included in a series of liquid processing steps. Furthermore, in Figure 7 In the text, "S101" is an example of identification information for etching process, "S102" is an example of identification information for rinsing process, "S103" is an example of identification information for replacement process, and "S104" is an example of identification information for drying process.

[0113] "Center Temperature" refers to the temperature of the center of wafer W during liquid processing. The "Center Temperature" field stores information based on temperature data detected by the first temperature sensor 110 (e.g., the average of temperature data detected during processing). "Edge Temperature" refers to the temperature of the edge of wafer W during liquid processing. This "Edge Temperature" field stores information based on temperature data detected by multiple second temperature sensors 120 (e.g., the average of temperature data detected during processing).

[0114] "Space Temperature" refers to the temperature inside chamber 20, and "Space Humidity" refers to the humidity inside chamber 20. The "Space Temperature" and "Space Humidity" items, for example, store the temperature and humidity detected by a temperature sensor (not shown) and a humidity sensor (located inside chamber 20).

[0115] "Ejection Flow Rate" refers to the ejection flow rate of the processing fluid, and "Rotation Speed" refers to the rotational speed of wafer W. For example, the ejection flow rate and rotational speed information collected from process information 191 can be stored in the "Ejection Flow Rate" and "Rotation Speed" items.

[0116] The monitoring unit 183 monitors the in-plane temperature distribution of the wafer W during liquid processing. Specifically, the monitoring unit 183 uses the collected information 192 and model formula 193 stored in the storage unit 19 to generate temperature distribution information 194 representing the in-plane temperature distribution of the wafer W during liquid processing, and saves the generated temperature distribution information 194 in the storage unit 19.

[0117] Here, model formula 193 is a model formula for estimating the in-plane temperature distribution of wafer W during liquid processing. Specifically, model formula 193 is a model formula for estimating the overall in-plane temperature distribution of wafer W using known parameter values, based on the local temperatures of wafer W detected by the first temperature sensor 110 and the second temperature sensor 120. Furthermore, based on other perspectives, model formula 193 is a model formula for correcting theoretical values ​​of the in-plane temperature distribution of wafer W derived from known processing conditions (parameter values) based on actual measured values ​​(sensor values).

[0118] When a series of liquid processing steps are completed on wafer W, monitoring unit 183 acquires collected information 192 about the completed liquid processing wafer W from storage unit 19. Furthermore, monitoring unit 183 generates temperature distribution information 194 representing the in-plane temperature distribution of wafer W during liquid processing by substituting the parameter values ​​and sensor values ​​included in the acquired collected information 192 into model formula 193.

[0119] Specifically, the temperature at multiple points from the center to the edge of wafer W is obtained using model formula 193. Monitoring unit 183 estimates the temperature between adjacent points among these multiple points using methods such as regression analysis (curve fitting), thereby generating temperature distribution information 194, which is then stored in storage unit 19. Monitoring unit 183 generates temperature distribution information 194 for each process included in a series of liquid processing steps.

[0120] Figure 8 This is a diagram illustrating an example of temperature distribution information 194 involved in the implementation method. Figure 8 The example shown is the temperature distribution information of a 300mm diameter wafer W. Figure 8 The horizontal axis of the graph shown represents the wafer position, which is the distance from the center of wafer W when the center is taken as the reference (0 mm).

[0121] like Figure 8 As shown, temperature distribution information 194 represents the temperature (wafer temperature) during processing at various locations (wafer positions) along the radial direction of wafer W. For example, in Figure 8 In the diagram, the black circles represent data obtained according to model formula 193, and the lines connecting the black circles represent data obtained through interpolation, such as regression analysis. Furthermore, in... Figure 8 In this example, temperature distribution information 194 is shown in the form of a graph for ease of understanding, but temperature distribution information 194 does not necessarily have to be in the form of a graph.

[0122] The determination unit 184 determines whether the liquid treatment performed on the wafer W is satisfactory based on the temperature distribution information 194 stored in the storage unit 19. The determination unit 184 determines whether the treatment result is satisfactory for each treatment (etching treatment, rinsing treatment, displacement treatment, and drying treatment) included in a series of liquid treatments.

[0123] Here, refer to Figures 9-12 This example illustrates the criteria for determining the quality of etched products. Figure 9 This is a diagram illustrating an example of etch rate conversion processing. Figure 10 This is a diagram illustrating an example of determining whether there are differences between wafers W. Figure 11 This is a diagram illustrating an example of determining whether there are differences between the 16 processing units. Figure 12 This is a diagram illustrating an example of determining whether there are differences between substrate groups.

[0124] like Figure 9 As shown, the determination unit 184 uses sensitivity data representing the relationship between temperature and etching rate to convert the temperature distribution information 194 into etching rate distribution information. The etching rate distribution information represents the etching rate at each position (wafer position) along the radial direction of the wafer W. Information such as etching rate distribution, associated with wafer ID, substrate group ID, and cell ID, is stored in the storage unit 19.

[0125] Next, the determination unit 184 determines whether the etching process is satisfactory based on the etching rate distribution information. For example, the determination unit 184 uses the etching rate distribution information to calculate the average etching rate across the entire surface of the wafer W. Furthermore, the determination unit 184 determines whether the calculated average value exceeds a preset threshold. If the calculated average value exceeds the threshold, the determination unit 184 determines that the etching process is normal; if the average value is below the threshold, the determination unit 184 determines that the etching process is abnormal.

[0126] Furthermore, the determination unit 184 calculates the deviation rate between the maximum and minimum etching rates by referring to the etching rate distribution information. For example, the determination unit 184 calculates the ratio (%) of the difference between the maximum and minimum values ​​relative to the maximum value as the deviation rate. The determination unit 184 determines whether the calculated deviation rate is lower than a preset threshold. Moreover, if the calculated deviation rate is lower than the threshold, the determination unit 184 determines that the in-plane uniformity of the etching process is normal. On the other hand, if the calculated deviation rate is higher than the threshold, the determination unit 184 determines that the in-plane uniformity of the etching process is abnormal.

[0127] In this way, the determination unit 184 can determine whether the etching process for each wafer W is good based on the temperature distribution information 194 of the wafer W.

[0128] Additionally, the determination unit 184 can also determine whether there are differences between wafers W that have undergone etching processing. For example, in Figure 10 Examples of the results for the average etch value and etch uniformity of four wafers W, IDs “W1”, “W2”, “W3”, and “W4”, are shown. Figure 10 The average etching value is the average of the etching rates mentioned above, and the etching uniformity is the deviation rate of the etching rates mentioned above. Let it be... Figure 10 The average etching value and etching uniformity of the four wafers W shown are all values ​​that are considered normal.

[0129] like Figure 10 As shown, the average etching value and etching uniformity of wafer W with wafer ID "W4" deviate from the average etching value and etching uniformity of the other three wafers W. In this case, the determination unit 184 determines that wafer W with wafer ID "W4" has produced differences in etching processing (average etching value and etching uniformity) among wafers W.

[0130] As an example, the determination unit 184 accumulates information on the average etching value and etching uniformity of the wafers W that have undergone liquid processing in the past, and calculates reference values ​​(e.g., average values) for the average etching value and etching uniformity based on the accumulated information. Furthermore, the determination unit 184 calculates the deviation from the reference values ​​for the average etching value and etching uniformity for each wafer W, and determines that a difference between wafers W has occurred if the calculated deviation exceeds a preset threshold.

[0131] Additionally, the determination unit 184 can also determine the differences between the processing units 16 that have undergone etching. For example, in Figure 11 The four processing units 16, namely "U1", "U2", "U3" and "U4", show the average etch value and average etch uniformity of multiple wafers W processed by each processing unit 16. Hereinafter, the average etch value and average etch uniformity of multiple wafers W processed by a certain processing unit 16 will be recorded as the average etch value and etch uniformity of that processing unit 16.

[0132] like Figure 11 As shown, the average etching value and etching uniformity of processing unit 16 with unit ID "U4" deviate from the average etching value and etching uniformity of the other three processing units 16. In this case, the determination unit 184 determines that there is a difference in the average etching value and etching uniformity between processing units 16 in processing unit 16 with unit ID "U4".

[0133] As an example, the determination unit 184 accumulates information on the average etching value and etching uniformity of the wafer W that has undergone liquid processing in the past for each processing unit 16, and calculates the average value of the average etching value and etching uniformity for each processing unit 16 based on the accumulated information. Furthermore, the determination unit 184 obtains reference values ​​for the average etching value and etching uniformity by calculating the average of the aforementioned average values ​​calculated for each processing unit 16. Moreover, the determination unit 184 calculates the deviation of each processing unit 16 from the reference values ​​for the average etching value and etching uniformity; if the calculated deviation exceeds a preset threshold, it determines that a difference has occurred between the processing units 16.

[0134] Furthermore, the determination unit 184 can also determine whether there are differences between substrate groups that have undergone etching treatment. For example, in Figure 12 The table below shows the average etch value and average etch uniformity of the multiple wafers W included in each substrate group, which are designated by substrate group IDs "L1", "L2", "L3", and "L4". The average etch value and average etch uniformity of the multiple wafers W included in a particular substrate group are described below as the average etch value and average etch uniformity of that substrate group.

[0135] like Figure 12 As shown, the average etching value and etching uniformity of substrate group ID "L4" deviate from the average etching value and etching uniformity of the other three substrate groups. In this case, the determination unit 184 determines that there is a difference in the average etching value and etching uniformity between substrate groups in substrate group ID "L4".

[0136] As an example, the determination unit 184 accumulates information on the average etching value and etching uniformity of the plurality of wafers W included in each substrate group. Furthermore, based on the accumulated information on the average etching value and etching uniformity, the determination unit 184 calculates an average value for the average etching value and etching uniformity for each substrate group. Additionally, the determination unit 184 obtains a reference value for the average etching value and etching uniformity by calculating the average of the aforementioned average values ​​calculated for each substrate group. Moreover, the determination unit 184 calculates the deviation from the reference value for the average etching value and etching uniformity for each substrate group, and if the calculated deviation exceeds a preset value, it determines that a difference has occurred between substrate groups.

[0137] In addition, the determination unit 184 also determines whether the drying process is satisfactory. Specifically, the determination unit 184 determines whether condensation has formed on the wafer W during the drying process based on the temperature distribution information 194. This point will be described later.

[0138] If the determination unit 184 determines that there is an abnormality in the liquid discharge process, the abnormality response unit 185 performs the prescribed abnormality response procedures.

[0139] For example, the abnormal response handling unit 185 can also perform abnormal response handling by changing the processing conditions of the liquid treatment.

[0140] Here, the storage unit 19 stores specification information 195 indicating changeable processing conditions. For example, the user of the substrate processing system 1 can appropriately change the specification information 195. The fault response processing unit 185 can change the processing conditions specified by the specification information 195 so that the results of the next and subsequent liquid processing are within the normal range.

[0141] For example, suppose it is determined that a difference between processing units 16 has occurred in a certain processing unit 16. In this case, the anomaly response processing unit 185 can individually change the ejection temperature of the etchant in the processing unit 16 where the difference between processing units 16 occurred. This can be achieved, for example, by changing the parameter value used to specify the heating temperature for heating by the temperature adjustment unit 46a. Specifically, the anomaly response processing unit 185 uses the temperature adjustment unit 46a to individually adjust the ejection temperature of the etchant so that the deviation from the average etching value and the reference value of etching uniformity of the processing unit 16 converges to the normal range. Furthermore, the anomaly response processing unit 185 can perform an inverse operation, for example, using model formula 193, thereby determining the changed value of the parameter value used to specify the heating temperature for heating by the temperature adjustment unit 46a.

[0142] Furthermore, the anomaly handling unit 185 can change the ejection temperature of the etching solution by altering the parameter value used to specify the heating temperature of the etching solution by the heater 82 of the solution supply unit 70. For example, suppose that an etching average value or etching uniformity is determined to be abnormal for a certain wafer W. In this case, the anomaly handling unit 185 can control the solution supply unit 70 to change the ejection temperature of the etching solution ejected for the wafer W to be liquid-processed next time and thereafter.

[0143] Furthermore, the anomaly response processing unit 185 can change the processing conditions to supply temperature-regulating liquid from the back supply unit 60, thereby changing the in-plane temperature distribution of the wafer W during liquid processing. This can be achieved, for example, by changing the parameter values ​​used to specify the heating temperature of the temperature-regulating liquid by the temperature adjustment unit 61d, the parameter values ​​used to specify the opening and closing of the valve 61c, and the parameter values ​​used to specify the heating temperature of the temperature-regulating liquid by the temperature-regulating liquid supply source 61b.

[0144] Furthermore, the anomaly response unit 185 can change the in-plane temperature distribution of the wafer W during liquid processing by altering the temperature within the chamber 20. This can be achieved, for example, by changing the parameter value used to specify the heating temperature of the temperature adjustment unit 21d.

[0145] Alternatively, for example, if it is determined that the average etching value is abnormal, the abnormality response processing unit 185 may change the parameter value used to specify the spraying time of the etching solution so that the average etching value is within the normal range.

[0146] Alternatively, if the determination unit 184 determines that condensation may have occurred during the drying process, the anomaly response unit 185 may control the temperature adjustment unit 21d to change the temperature inside the chamber 20, thereby changing the dew point temperature. The anomaly response unit 185 may also control the humidity adjustment unit 21e to change the humidity inside the chamber 20, thereby changing the dew point temperature. Furthermore, the anomaly response unit 185 may control at least one of the temperature adjustment unit 46c, the displacement fluid supply unit 90, and the back-side supply unit 60 to change the temperature of the wafer W during the displacement process.

[0147] Alternatively, the anomaly handling unit 185 can also perform anomaly handling by outputting anomaly information obtained by associating information representing the anomaly content with the wafer ID to an external device 5 connected to the control device 4 via a network such as the Internet.

[0148] <Regarding the monitoring and processing process>

[0149] Next, refer to Figure 13 This will explain the monitoring process performed by the control unit 18. Figure 13 It is a flowchart illustrating the monitoring process involved in the implementation method.

[0150] like Figure 13 As shown, the collection unit 182 of the control unit 18 collects multiple parameter values ​​for specifying the processing conditions of the liquid treatment, including sensor values ​​from various sensors such as the first temperature sensor 110 and the second temperature sensor 120 (step S101). Next, the monitoring unit 183 of the control unit 18 uses the collected information 192 and the model formula 193 to generate temperature distribution information 194 (step S102).

[0151] Next, the determination unit 184 of the control unit 18 determines whether the liquid treatment result is normal based on the generated temperature distribution information 194 (step S103). Furthermore, a specific determination example will be described later.

[0152] If the liquid processing result is determined to be abnormal in step S103 (step S103, "No"), the abnormality response processing unit 18 of the control unit 18 performs abnormality response processing on the control unit 185 (step S104). If the processing in step S104 is completed or if the liquid processing result is determined to be normal in step S103 (step S103, "Yes"), the control unit 18 ends the monitoring process.

[0153] <First Case of Judgment Processing: Comparison of Temperature Distribution Information with Threshold>

[0154] Figure 14 It means Figure 13 The flowchart shows the first example of the determination process in step S103.

[0155] like Figure 14 As shown, the determination unit 184 of the control unit 18 determines whether there is a temperature region below the threshold by comparing the temperature distribution information 194 with a preset threshold (step S201). Then, if there is no temperature region below the threshold (step S201, "No"), the determination unit 184 determines that the liquid processing (e.g., etching processing) result is normal (step S202). On the other hand, if there is a temperature region below the threshold (step S201, "Yes"), the determination unit 184 determines that the liquid processing result is abnormal (step S203).

[0156] For example, if the preset threshold is 50°C, the temperature distribution information 194 is used to determine whether there is a region below 50°C within the surface of the wafer W. Furthermore, if a region below 50°C exists, the determination unit 184 determines that the liquid processing (e.g., etching process) result is abnormal.

[0157] Furthermore, an example of using a lower threshold for decision processing is shown here, but the decision unit 184 may also use an upper threshold for decision processing. Alternatively, the decision unit 184 may use a threshold range having both an upper and lower limit for decision processing.

[0158] <Second example of judgment processing: Comparison of etch rate distribution information with threshold>

[0159] Figure 15 It means Figure 13 The flowchart for the second example of the determination process in step S103 is shown.

[0160] like Figure 15 As shown, the determination unit 184 converts the temperature distribution information 194 into etching rate distribution information (step S301), and calculates the average etching rate and etching rate uniformity based on the etching rate distribution information (step S302).

[0161] Next, the determination unit 184 determines whether the average etching value exceeds the threshold (step S303). If it does not exceed the threshold (step S303, "No"), it determines that the etching process result is abnormal (step S306).

[0162] On the other hand, in step S303, if the average etching value exceeds a threshold (step S303, "Yes"), the determination unit 184 determines whether the etching uniformity is below the threshold (step S304). In this process, if the etching uniformity is not below the threshold (step S304, "No"), the determination unit 184 determines that the etching process result is abnormal (step S306). On the other hand, if the etching uniformity is below the threshold (step S303, "Yes"), the determination unit 184 determines that the etching process result is normal (step S305).

[0163] <Third Case of Judgment: Regarding the Adequacy of Drying Process>

[0164] Figure 16 It means Figure 13 The flowchart for the third example of the determination process in step S103 is shown.

[0165] like Figure 16 As shown, the determination unit 184 first calculates the dew point temperature (step S401). For example, the determination unit 184 uses the ambient temperature and ambient humidity included in the collected information 192 to calculate the dew point temperature inside the chamber 20 during liquid treatment.

[0166] Next, the determination unit 184 compares the temperature distribution information 194 with the dew point temperature to determine whether there is a temperature region below the dew point temperature (step S402). Furthermore, if there is no temperature region below the dew point temperature (step S401, "No"), the determination unit 184 determines that the drying process is normal, meaning there is no risk of condensation forming on the wafer W during the drying process (step S403). On the other hand, if there is a temperature region below the dew point temperature (step S402, "Yes"), the determination unit 184 determines that the drying process is abnormal, meaning there is a risk of condensation forming on the wafer W during the drying process (step S404).

[0167] Furthermore, the determination unit 184 is not required to perform step S401. For example, the determination unit 184 can use a preset dew point temperature to perform the determination in step S402. In addition, the temperature and humidity used to calculate the dew point temperature are not required to be the temperature and humidity inside the chamber 20; for example, they can be the temperature and humidity inside the factory where the substrate processing system 1 is installed.

[0168] As described above, the substrate processing method according to the embodiment includes a liquid processing step, a detection step, a generation step, and a determination step. In the liquid processing step, a processing unit (for example, processing unit 16) is used to liquid process the substrate. The processing unit includes a substrate holding mechanism (for example, substrate holding mechanism 30) that holds the substrate (for example, wafer W) horizontally, and a processing liquid supply unit (for example, processing liquid supply unit 40) that sprays processing liquid (for example, etching solution, rinsing solution, or displacement solution) toward the substrate held by the substrate holding mechanism. In the detection step, multiple sensors (for example, a first temperature sensor 110 and a second temperature sensor 120, etc.) provided in the processing unit are used to detect the temperature of the center portion of the substrate and the temperature of the ends of the substrate during liquid processing, respectively. In the generation process, temperature distribution information (temperature distribution information 194) representing the in-plane temperature distribution of the substrate during liquid treatment is generated based on one or more parameter values ​​of the specified liquid treatment conditions, the temperature of the center of the substrate detected by the detection process, and the temperature of the ends of the substrate. In the judgment process, the result of liquid treatment is determined based on the temperature distribution information.

[0169] Therefore, according to the substrate processing method described in the embodiments, it is possible to appropriately determine whether the liquid treatment result for each product substrate is satisfactory.

[0170] The processing liquid supply unit includes a nozzle (e.g., nozzle 41) for spraying processing liquid and a supply line (e.g., supply lines 44a-44c) connected to the nozzle for supplying processing liquid to the nozzle. Furthermore, during the liquid processing step, the processing liquid is sprayed from the nozzle toward the center of the substrate. Additionally, during the detection step, the temperature detected by a temperature sensor (e.g., a first temperature sensor 110) provided at the nozzle or the supply line is used to determine the temperature of the center of the substrate. This allows for easy determination of the temperature of the center of the substrate.

[0171] The substrate holding mechanism includes multiple gripping portions (for example, gripping portion 31a) for gripping the ends of the substrate. Furthermore, during the detection process, the temperature detected by a temperature sensor (for example, a second temperature sensor 120) provided on at least one of the multiple gripping portions is used as the temperature of the substrate's end. Therefore, the temperature of the substrate's end can be easily determined.

[0172] Multiple parameter values ​​include at least one of the following: the ambient temperature and humidity within the processing unit, the flow rate of the processing liquid, and the rotational speed of the substrate. This improves the accuracy of temperature distribution information.

[0173] During the judgment process, based on multiple temperature distribution information generated through the production process, the deviation between each substrate and other substrates in terms of whether liquid treatment has occurred is determined (e.g., wafer-to-wafer difference). This allows for easy monitoring of wafer-to-wafer differences.

[0174] In the liquid treatment process, multiple processing units are used to liquid treat multiple substrates. Furthermore, in the judgment process, based on the multiple temperature distribution information generated by the generation process, it is determined whether there is any deviation in the liquid treatment results between each processing unit and the other multiple processing units (for example, the difference between processing units 16). This allows for easy monitoring of any differences between processing units.

[0175] In the judgment process, based on multiple temperature distribution information generated through the production process, the deviation of liquid treatment results between each substrate group and multiple other substrate groups (as an example, inter-substrate group difference) is determined for each substrate group, which is a substrate manufacturing unit. Thus, it is easy to monitor whether there is any inter-substrate group difference.

[0176] The substrate processing method according to the embodiment includes a step of obtaining the dew point temperature within the processing unit. Furthermore, in the determination step, it is determined whether condensation has formed on the substrate during liquid processing (for example, drying processing) based on temperature distribution information and the dew point temperature. This allows for easy identification of substrates, for example, that pose a risk of watermark formation.

[0177] The substrate processing method according to the embodiment includes the following steps: controlling a temperature adjustment unit (for example, temperature adjustment units 46a and 46c) provided in the supply line based on temperature distribution information to correct the temperature of the processing liquid ejected from the processing liquid supply unit. This reduces the number of substrates determined to have abnormal liquid processing results.

[0178] The substrate processing method described in the embodiment includes the following steps: correcting at least one parameter value among multiple parameter values ​​based on temperature distribution information. This reduces the number of substrates deemed to have abnormal liquid processing results.

[0179] Furthermore, the embodiments disclosed herein should be considered illustrative in all respects and not restrictive. In fact, the above-described embodiments can be implemented in various ways. In addition, the above-described embodiments can be omitted, substituted, and modified in various ways without departing from the appended claims and their spirit.

Claims

1. A substrate processing method, comprising the following steps: A processing unit is used to perform liquid treatment on a substrate. The processing unit includes a substrate holding mechanism that holds the substrate horizontally and a processing liquid supply unit that sprays processing liquid toward the substrate held by the substrate holding mechanism. Multiple sensors disposed in the processing unit are used to detect the temperature of the center of the substrate and the temperature of the end of the substrate during liquid treatment, respectively. Temperature distribution information representing the in-plane temperature distribution of the substrate during liquid treatment is generated based on one or more parameter values ​​of the specified liquid treatment conditions, the temperature of the center portion of the substrate and the temperature of the end portion of the substrate detected by the detection process. as well as The effectiveness of the liquid treatment is determined based on the temperature distribution information. The substrate holding mechanism includes multiple gripping portions for gripping the ends of the substrate. During the detection process, the temperature detected by a temperature sensor provided in at least one of the plurality of gripping portions is used as the temperature of the end of the substrate.

2. The substrate processing method according to claim 1, characterized in that, The processing fluid supply unit includes a nozzle for ejecting the processing fluid and a supply line connected to the nozzle for supplying the processing fluid to the nozzle. During the liquid treatment process, the treatment liquid is sprayed from the nozzle toward the center of the substrate. During the testing process, the temperature detected by the temperature sensor located on the nozzle or the supply line is taken as the temperature of the center of the substrate.

3. The substrate processing method according to claim 1 or 2, characterized in that, The one or more parameter values ​​include at least one of the following: the space temperature and humidity within the processing unit, the spray flow rate of the processing liquid, and the rotational speed of the substrate.

4. The substrate processing method according to claim 1 or 2, characterized in that, In the determination process, based on the multiple temperature distribution information generated by the generation process, it is determined for each substrate whether there is a deviation between the substrate and the other multiple substrates in terms of the liquid treatment result.

5. The substrate processing method according to claim 1 or 2, characterized in that, In the liquid treatment process, multiple processing units are used to perform the liquid treatment on multiple substrates. In the determination process, based on the multiple temperature distribution information generated by the generation process, it is determined for each processing unit whether there is a deviation between the processing unit and the other multiple processing units in the liquid treatment result.

6. The substrate processing method according to claim 1 or 2, characterized in that, In the determination process, based on the multiple temperature distribution information generated by the generation process, it is determined whether there is a deviation between each substrate group and the other multiple substrate groups in the liquid treatment result for each substrate group, which is the manufacturing unit of the substrate.

7. The substrate processing method according to claim 1 or 2, characterized in that, It also includes the step of obtaining the dew point temperature within the processing unit. In the process of making the determination, the presence or absence of condensation on the substrate during the liquid treatment is determined based on the temperature distribution information and the dew point temperature.

8. The substrate processing method according to claim 2, characterized in that, It also includes the following processes: The temperature of the processing liquid ejected from the processing liquid supply unit is corrected by controlling the temperature adjustment unit installed in the supply line based on the temperature distribution information.

9. The substrate processing method according to claim 1 or 2, characterized in that, It also includes the following processes: Based on the temperature distribution information, at least one of the one or more parameter values ​​is corrected.

10. A substrate processing apparatus comprising: A substrate holding mechanism having a plurality of gripping portions for gripping the ends of a substrate and holding the substrate horizontally; The processing liquid supply unit sprays processing liquid toward the substrate held by the substrate holding mechanism; A first temperature sensor detects the temperature of the center portion of the substrate held by the substrate holding mechanism; A second temperature sensor, disposed at at least one of the plurality of holding portions, detects the temperature as the temperature of the end of the substrate held by the substrate holding mechanism; and Control Department The control unit causes each part to perform a substrate processing method including the following steps: With the substrate held horizontally using the substrate holding mechanism, the processing liquid is sprayed from the processing liquid supply unit toward the substrate, thereby performing liquid processing on the substrate; Using the first temperature sensor and the second temperature sensor, the temperature of the center of the substrate and the temperature of the end of the substrate during liquid treatment are detected, respectively. Based on one or more parameter values ​​specifying the liquid treatment conditions, the temperature of the center portion of the substrate and the temperature of the ends of the substrate detected by the detection process, temperature distribution information representing the in-plane temperature distribution of the substrate during liquid treatment is generated; and The effectiveness of the liquid treatment is determined based on the temperature distribution information.

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