Display device

Abstract

A display device according to an embodiment of the disclosure includes a display panel including a display area and a non-display area, and a sensor unit disposed on the display panel and including a sensing area and a non-sensing area. The sensor unit includes a touch sensor unit detecting a touch input in the sensing area, and a photoelectric sensor unit detecting ambient illuminance.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit of Korean Patent Application No. 10-2020-0129016, filed on October 6, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to display devices, and more specifically, to a display device that includes a photoelectric sensor in a touch panel. Background Technology

[0004] Electronic devices that provide images to users, such as smartphones, digital cameras, laptops, navigation systems, and smart TVs, may include display devices for displaying images. Display devices may include display panels for generating and displaying images, as well as various input devices.

[0005] Touch sensors, used to recognize touch input, are widely used in display devices primarily for smartphones or tablet PCs. Due to the convenience of touchscreens, touch sensors have gradually replaced keyboards as the primary physical input device. Summary of the Invention

[0006] Display devices can use photoelectric sensors to increase display brightness in high ambient light and decrease display brightness in low ambient light. Visibility can be increased and / or power consumption can be reduced. Although photoelectric sensors can be placed in the bezel area of ​​the display device, the dead space of the display device can be minimized by placing the photoelectric sensors in areas other than the bezel area.

[0007] Embodiments of this disclosure provide a display device in which a photoelectric sensor unit is disposed between the touch electrodes of a touch sensor unit in a sensing area.

[0008] The embodiments disclosed herein are not limited to those described herein, and other embodiments not described will be clearly understood by those skilled in the art based on the following description.

[0009] Embodiments of this disclosure provide a display device, comprising: a display panel including a display area and a non-display area; and a sensor unit disposed on the display panel and including a sensing area and a non-sensing area. The sensor unit includes: a touch sensor unit for detecting touch input in the sensing area; and a photoelectric sensor unit for detecting ambient light.

[0010] Embodiments of this disclosure provide a display device, the display device comprising: a display panel including a display area and a non-display area; and a sensor unit disposed on the display panel and including a sensing area and a non-sensing area, wherein the sensor unit comprises: a touch sensor unit including a plurality of touch electrodes; and a photoelectric sensor unit including a plurality of photoelectric electrodes, wherein the touch electrodes are arranged in a matrix in the sensing area, and the photoelectric electrodes are disposed between the touch electrodes in a plan view.

[0011] The photoelectric sensor unit may include a first photoelectrode, a second photoelectrode, and a semiconductor pattern, wherein the first photoelectrode and the second photoelectrode may overlap with the semiconductor pattern in the thickness direction.

[0012] The semiconductor pattern may include polycrystalline silicon or oxide.

[0013] An insulating layer may be located between at least one of the first photoelectrode and the second photoelectrode and the semiconductor pattern.

[0014] The semiconductor pattern may include a P-type semiconductor region and an N-type semiconductor region, and the first photoelectrode can be electrically connected to the P-type semiconductor region through a first contact hole in the insulating layer, and the second photoelectrode can be electrically connected to the N-type semiconductor region through a second contact hole in the insulating layer.

[0015] The semiconductor pattern may include an N-type semiconductor region formed at two end regions and a P-type semiconductor region between the N-type semiconductor regions, and the first photoelectrode and the second photoelectrode may be electrically connected to their respective N-type semiconductor regions through respective contact holes formed in the insulating layer.

[0016] The display device may further include a controller, which may include a photodetector that detects the current flowing between the first photoelectrode and the second photoelectrode when light is incident on the semiconductor pattern.

[0017] A reverse bias voltage can be applied to the second photoelectrode, and the first photoelectrode can be connected to the photodetector.

[0018] The display device may further include a current amplifier between the photoelectric sensor unit and the photoelectric detector.

[0019] The touch electrode, the first photoelectrode, and the second photoelectrode can be formed simultaneously from the same material, and the touch electrode can be insulated from the first photoelectrode and the second photoelectrode.

[0020] The display area may include a light-emitting area overlapping the light-emitting element in the thickness direction and a non-light-emitting area other than the light-emitting area. The first photoelectrode and the second photoelectrode may be formed as a grid structure. The first photoelectrode and the second photoelectrode each include a main body portion and a grid hole, and the main body portion of each of the first photoelectrode and the second photoelectrode may overlap the non-light-emitting area in the thickness direction.

[0021] The semiconductor pattern may overlap with the light-emitting region and the non-light-emitting region in the thickness direction.

[0022] The photoelectric sensor unit may include a first photoelectrode, a second photoelectrode, and a photoconductor, and the first photoelectrode and the second photoelectrode may overlap with the photoconductor in the thickness direction.

[0023] The photoconductor can be formed from any one of cadmium sulfide (CdS), lead sulfide (PdS), selenium (Se), zinc oxide (ZnO), and antimony trisulfide (Sb2S3).

[0024] An insulating layer may be located between the first photoelectrode and the second photoelectrode and the photoconductor.

[0025] The first photoelectrode can be electrically connected to one side of the photoconductor through a contact hole in the insulating layer, and the second photoelectrode can be electrically connected to the other side of the photoconductor through a contact hole in the insulating layer.

[0026] The display area may include a light-emitting area overlapping the light-emitting element in the thickness direction and a non-light-emitting area other than the light-emitting area. The first photoelectrode, the second photoelectrode, and the photoconductor may be formed as a grid structure. The first photoelectrode and the second photoelectrode each include a main body portion and a grid hole. The main body portion of each of the first photoelectrode, the second photoelectrode, and the photoconductor may overlap with the non-light-emitting area in the thickness direction.

[0027] The touch electrode, the first photoelectrode, and the second photoelectrode can be formed simultaneously from the same material, and the touch electrode can be insulated from the first photoelectrode and the second photoelectrode.

[0028] The display panel can control brightness by controlling the number of periods during which pixels are turned off by the light emission control signal within a frame (i.e., the periods when the light emission control signal is off).

[0029] The display panel may include a panel driver, and the display device may also include a controller, wherein the panel driver may supply a control signal to the controller to detect the current generated from the photoelectric sensor unit only during a period that overlaps with the period during which the pixels of the display panel are turned off (i.e., during the period when the light emission control signal is off).

[0030] According to embodiments of the present disclosure, a display device may include a photoelectric sensor unit formed by using virtual touch electrodes and semiconductor patterns in the sensing area of ​​a sensor unit.

[0031] The embodiments are not limited to the examples above. This specification includes other embodiments and variations thereof. Attached Figure Description

[0032] Figure 1 This is a schematic diagram illustrating a display device according to an embodiment.

[0033] Figure 2 yes Figure 1 A schematic partial cross-sectional view of the display device is shown in the figure.

[0034] Figure 3 yes Figure 1 The block diagram of the touch sensor is shown in the figure.

[0035] Figure 4 This is a schematic diagram showing a plan view of a touch sensor according to an embodiment.

[0036] Figure 5 This illustrates an embodiment. Figure 4 A schematic diagram of an enlarged plan view of part A.

[0037] Figure 6 It shows along Figure 5 A schematic diagram of the cross-section taken by line I-I'.

[0038] Figures 7A to 7C It is shown along various embodiments Figure 5 A schematic diagram of the cross-section of the photoelectric sensor unit taken from line II-II'.

[0039] Figure 8A This is a schematic diagram illustrating the arrangement relationship between the pixels of the display panel and the touch sensor unit according to an embodiment.

[0040] Figure 8B This is a schematic diagram illustrating the arrangement relationship between the pixels and photoelectric sensor units of the display panel according to an embodiment.

[0041] Figure 8CThis is a schematic diagram illustrating the arrangement relationship between pixels and photoelectric sensor units of a display panel according to another embodiment;

[0042] Figure 9A It shows along Figure 8A A schematic diagram of the cross-section taken from line III-III'. Figure 9B It shows along Figure 8B A schematic diagram of the cross-section taken by line IV-IV', and Figure 9C It shows along Figure 8C A schematic diagram of the cross-section taken by line V-V'.

[0043] Figure 10 This is a signal timing diagram illustrating an active-mode organic light-emitting diode (AMOLED) pulse drive (AID) method that uses an adjusted duty cycle of the light emission control signal.

[0044] Figure 11 It is shown Figure 1 The circuit diagram for an example of a pixel is shown in the image.

[0045] Figure 12 This illustrates an embodiment. Figure 11 The signal timing diagram of the pixel driving waveform is shown in the figure.

[0046] Figure 13 This is a schematic diagram showing a plan view of a sensor unit included in a display device according to another embodiment.

[0047] Figure 14 It is shown Figure 13 A schematic diagram of an enlarged plan view of part B.

[0048] Figure 15A and Figure 15B This is a schematic diagram showing a plan view of a sensor unit according to an embodiment of the present disclosure, illustrating the first metal layer and the second metal layer, respectively. Figure 15C This is a schematic diagram showing a cross-sectional view of a sensor unit according to an embodiment of the present disclosure.

[0049] Figures 16A to 16C It is shown along various embodiments Figure 14 A schematic diagram of the cross-section of the photoelectric sensor unit taken by line VII-VII'.

[0050] Figure 17 It is shown Figure 13 A schematic diagram of an enlarged planar view of part C. Detailed Implementation

[0051] Embodiments of the present disclosure, including apparatus and methods of operation, will become more apparent when considered in conjunction with the accompanying drawings, based on the following description. However, the present disclosure is not limited to the embodiments disclosed below and can be implemented in a variety of different forms. The described embodiments complete the present disclosure and are provided to those skilled in the art to illustrate the general scope of the disclosure, wherein the inventive concept is defined by the scope of the claims.

[0052] When an element or layer is referred to as being "on" another element or layer, the element or layer may be directly on the other element or layer, or an intervening element or layer may be disposed therebetween.

[0053] It goes without saying that although the terms first, second, third, and fourth are used to describe various configuration elements, these configuration elements should not be limited by these terms. These terms are only used to distinguish one configuration element from another. Therefore, the first configuration element described below can be any one of the second, third, and fourth configuration elements within the technical concept of this disclosure.

[0054] The embodiments described herein can be described with reference to plan and cross-sectional views, which serve as idealized schematic diagrams of this disclosure. Therefore, the shapes of the example figures may vary due to manufacturing techniques and / or tolerances. Consequently, the embodiments of this disclosure are not limited to the specific forms shown, but also include variations in form resulting from manufacturing processes. Therefore, the areas shown in the drawings are schematic in nature, and the shapes of the areas shown in the drawings are used to illustrate specific shapes of areas of elements and are not intended to limit the scope of this disclosure.

[0055] In the following description, embodiments will be illustrated with reference to the accompanying drawings.

[0056] Figure 1 This is a schematic diagram illustrating a display device according to an embodiment. Figure 2 yes Figure 1 A schematic partial cross-sectional view of the display device is shown in the figure. Figure 3 yes Figure 1 The block diagram of the touch sensor is shown in the figure. Figure 4 This is a schematic diagram showing a plan view of a touch sensor according to an embodiment.

[0057] In this specification, "upper," "top," and "upper surface" can indicate the upper direction, that is, the Z-axis direction relative to the display panel (DP), and "lower," "bottom," and "lower surface" can indicate the lower direction, that is, the direction opposite to the Z-axis direction relative to the DP. Additionally, when viewing the display panel (DP) from a flat surface, "left," "right," "inward," and "outward" can indicate directions. For example, "left" can indicate the direction opposite to the X-axis direction, "right" can indicate the X-axis direction, "inward" can indicate the Y-axis direction such as entering a page, and "outward" can indicate the direction opposite to the Y-axis direction, such as outside the page.

[0058] Reference Figures 1 to 4 The display device 1 according to the embodiment may include a touch sensor TSM, a display panel 300 and a panel driver 400.

[0059] According to an embodiment, the touch sensor TSM may include a sensor unit 100 and a controller 200. For ease of description, Figure 1 The sensor unit 100 and the display panel 300 are shown to be separate from each other, but this disclosure is not limited thereto. For example, the sensor unit 100 and the display panel 300 may also be integrally formed.

[0060] Display panel 300 includes a display area DA and a non-display area NDA surrounding at least a portion of the display area DA.

[0061] The display panel 300 may include a substrate BSL, a component layer DSL located on the substrate BSL, and a thin-film encapsulation layer TFE located on the component layer DSL.

[0062] The substrate BSL supports the element layer DSL. In some embodiments, the substrate BSL may be an insulating substrate formed of glass, quartz, ceramic, or plastic.

[0063] The component layer DSL can be located on the substrate BSL. In some embodiments, the component layer DSL may include a plurality of pixels PX and a plurality of display signal lines located on the substrate BSL. Each pixel PX may include a thin-film transistor (TFT), a capacitor, and a light-emitting element. The plurality of display signal lines may include a scan line SL for transmitting scan signals to each pixel PX, a light-emitting control signal line EL for transmitting light-emitting control signals, and a data line DL for transmitting data signals.

[0064] The pixels PX included in the element layer DSL can be located in the display area DA.

[0065] The component layer DSL may also include components and wiring or lines located on the substrate BSL in the non-display area NDA. Additionally, the components and wiring or lines may generate or transmit various signals to the pixel PX.

[0066] The thin-film encapsulation layer (TFE) can be located on the component layer (DSL). The TFE protects the component layer (DSL). The TFE can comprise multiple thin films.

[0067] In this disclosure, the type of display panel 300 is not particularly limited. For example, display panel 300 may be a self-emissive display panel, such as an organic light-emitting diode (OLED) display panel, a quantum dot light-emitting diode (QLED) display panel, a micro-light-emitting diode display panel based on inorganic materials, or a nano-light-emitting diode display panel based on inorganic materials. Alternatively, display panel 300 may be a non-emissive display panel, such as a liquid crystal display (LCD) panel, an electrophoretic display (EPD) panel, or an electrowetting display (EWD) panel. When display panel 300 is a non-emissive display panel, display device 1 may further include a backlight unit for supplying light to display panel 300. In the following description, for ease of description, the case where display panel 300 is an organic light-emitting diode display panel will be used as an example.

[0068] Panel driver 400 is electrically connected to display panel 300 to supply signals required for driving display panel 300. As an example, panel driver 400 may include at least one scan driver that supplies scan signals to scan line SL, an emissive controller that supplies emissive control signals to emissive control signal line EL, a data driver that supplies data signals to data line DL, and a timing controller that drives the data driver.

[0069] According to embodiments, the scan driver, light emission controller, data driver, and / or timing controller may be integrated into a single display integrated circuit (D-IC), but are not limited thereto. For example, in another embodiment, at least one of the scan driver, light emission controller, data driver, and timing controller may be integrated into or mounted on the display panel 300.

[0070] Additionally, according to an embodiment, the panel driver 400 may be electrically connected to the controller 200 of the touch sensor TSM to supply control signals CS for driving the touch sensor TSM.

[0071] The sensor unit 100 can be provided on at least one region of the display panel 300. For example, the sensor unit 100 can be provided on at least one surface of the display panel 300 to overlap with the display panel 300 in a third direction (e.g., the Z-axis direction) that is the thickness direction. For example, the sensor unit 100 can be disposed on one of the two surfaces of the display panel 300 on which an image is displayed (e.g., the upper surface). Alternatively, the sensor unit 100 can be formed directly on at least one or both surfaces of the display panel 300, or it can be formed inside the display panel 300. For example, the sensor unit 100 can be formed directly on an upper substrate or a thin film encapsulation layer of the display panel 300, or on an outer surface (such as the upper surface of an upper substrate or the lower surface of a lower substrate), and / or it can be formed directly on an inner surface (such as the lower surface of an upper substrate or the upper surface of a lower substrate).

[0072] The sensor unit 100 includes a sensing area SA capable of sensing touch input and a non-sensing area NSA surrounding at least a portion of the sensing area SA. According to an embodiment, the sensing area SA may correspond to the display area DA of the display panel 300, and the non-sensing area NSA may correspond to the non-display area NDA of the display panel 300. For example, the sensing area SA of the sensor unit 100 may overlap with the display area DA of the display panel 300 in a third direction (e.g., the Z-axis direction), and the non-sensing area NSA of the sensor unit 100 may overlap with the non-display area NDA of the display panel 300 in a third direction (e.g., the Z-axis direction).

[0073] According to embodiments of the present disclosure, in the sensing area SA, the sensor unit 100 may include a touch sensor unit TSU for detecting touch input and a photoelectric sensor unit PSU for detecting ambient illuminance.

[0074] The touch sensor unit (TSU) may include touch electrodes 120. The touch electrodes 120 may be arranged in a matrix pattern. That is, the touch electrodes 120 may be arranged in a first direction (e.g., the X-axis direction) and a second direction intersecting the first direction (e.g., the Y-axis direction). For example, the first direction may be perpendicular to the second direction, but is not limited thereto. The touch electrodes 120 may have a square shape, but is not limited thereto. In some embodiments, the touch electrodes 120 may have various shapes, such as polygonal or circular shapes. Additionally, in some embodiments, the touch electrodes 120 may have two or more shapes. For example, some touch electrodes 120 may have a square shape, and others may have a circular shape. Furthermore, in some embodiments, the touch electrodes 120 may have different areas. For example, when a hole for inserting a camera, etc., is formed in the display device 1, the touch electrodes 120 around the hole may also have a shape in which some touch electrodes are reduced or removed according to the shape of the hole.

[0075] The touch electrodes 120 can be arranged in the form of islands spaced apart from each other in a first direction (e.g., the X-axis direction) and a second direction (e.g., the Y-axis direction) intersecting the first direction. The touch electrodes 120 can form electrode rows in the first direction (e.g., the X-axis direction) and can form electrode rows in the second direction (e.g., the Y-axis direction).

[0076] exist Figure 4 For ease of description, the touch electrodes 120 are arranged in a 4×4 matrix. That is, although four touch electrodes 120 are shown arranged sequentially in a second direction (e.g., the Y-axis direction) in the order of first electrode row RD1, second electrode row RD2, third electrode row RD3 and fourth electrode row RD4, and four touch electrodes 120 are arranged sequentially in a first direction (e.g., the X-axis direction) in the order of first electrode column CD1, second electrode row CD2, third electrode row CD3 and fourth electrode row CD4, it should be understood that these are for ease of description and are not limitations, and the number and arrangement of touch electrodes 120 can be varied.

[0077] The touch electrode 120 can be electrically connected to the controller 200 and can receive a drive signal Ts for detecting touch from the controller 200. In addition, the touch electrode 120 can output a sensing signal Rs for detecting touch to the controller 200.

[0078] The touch electrode 120 may overlap with at least one electrode provided on the display panel 300. For example, when the display panel 300 is an organic light-emitting diode display panel, the touch electrode 120 may overlap with a cathode electrode or the like on the display panel 300.

[0079] The photoelectric sensor unit PSU can generate a current Ip in response to the ambient light illuminance (i.e., the aforementioned ambient illuminance). The intensity of the current Ip can correspond to the ambient light illuminance. The current Ip generated by the photoelectric sensor unit PSU can be provided to the photodetector 250.

[0080] The photoelectric sensor unit (PSU) may include photoelectrodes 150 and semiconductor patterns SCP. According to an embodiment, the photoelectrodes 150 can be formed using virtual touch electrodes. That is, the photoelectrodes 150 and touch electrodes 120 can be formed simultaneously from the same material. The virtual touch electrodes are electrically insulated from the touch electrodes 120, and the virtual touch electrodes can be formed in the sensing area SA in blank spaces where no touch electrodes 120 are formed. Touch electrodes 120 arranged regularly in a matrix can be visually perceived as a pattern by the user of the display device 1, resulting in suboptimal display quality. Alternatively, virtual touch electrodes can be arranged between the touch electrodes 120.

[0081] For example, the photoelectrode 150 can be formed using virtual touch electrodes arranged between the touch electrodes 120 forming the first electrode row RD1. The photoelectrode 150 may include a first photoelectrode 151 and a second photoelectrode 152. Figure 4 As shown, three sets of first photoelectrodes 151 and second photoelectrodes 152 can be arranged between four touch electrodes 120 arranged in a first direction (e.g., the X-axis direction). The photoelectrodes 150 between the touch electrodes 120 constituting the first electrode row RD1 can be arranged according to a method of placing an illuminance sensor above the display device 1. However, this is just an example, and the photoelectrodes 150 can be formed anywhere in the blank space between the touch electrodes 120.

[0082] The first photoelectrode 151 and the second photoelectrode 152 may have substantially the same shape as the touch electrode 120. For example, the first photoelectrode 151 and the second photoelectrode 152 may have a square shape, but are not limited thereto. That is, the first photoelectrode 151 and the second photoelectrode 152 may have various shapes, such as polygonal shapes and / or circular shapes. In addition, the first photoelectrode 151 and the second photoelectrode 152 may occupy an area smaller than that of the touch electrode 120.

[0083] However, this is just an example, and the first photoelectrode 151 and the second photoelectrode 152 may have a different shape from the touch electrode 120 or have a substantially the same area as the touch electrode 120.

[0084] According to an embodiment, the semiconductor pattern SCP can be formed to overlap with the photoelectrode 150 in a third direction (e.g., the Z-axis direction) as the thickness direction. The semiconductor pattern SCP can have substantially the same shape as the touch electrode 120 and the photoelectrode 150. For example, the semiconductor pattern SCP can have a square shape. However, the semiconductor pattern SCP is not limited to this and can be formed in various shapes such as polygonal and / or circular shapes. In addition, the semiconductor pattern SCP can have a larger area than the photoelectrode 150. However, this is just an example, and the shape and area of ​​the semiconductor pattern SCP can be changed as long as ambient light is absorbed and electrons and holes are excited to generate current due to the photoelectric effect.

[0085] The controller 200 may include a touch driver 210, a touch detector 230, and a photodetector 250; and the controller 200 may be electrically connected to a touch sensor unit TSU via at least one touch wiring TSL to supply a drive signal Ts to the touch sensor unit TSU and / or receive a sensing signal Rs corresponding to the drive signal Ts from the touch sensor unit TSU to detect the touch position. Additionally, the controller 200 may be electrically connected to a photodetector unit PSU via photoelectric wiring PSL to detect current Ip.

[0086] For example, touch electrode 120 may form a first capacitance with at least one electrode provided in display panel 300. When a user's finger contacts at least one of the touch electrodes 120, a second capacitance is generated between the finger and touch electrode 120, and the first capacitance is changed by the second capacitance. The change in the first capacitance is transmitted to touch detector 230 via touch wiring TSL connected to the touch electrode 120 in contact with the finger. Touch detector 230 can detect the touch position by examining the touch wiring TSL that receives the value of the first capacitance. That is, touch detector 230 can detect the touch position by detecting the amount of change in self-capacitance formed on touch electrode 120.

[0087] The photodetector 250 can be electrically connected to the photodetector unit PSU and / or the photoelectrode 150, and detect the current Ip flowing between the first photoelectrode 151 and the second photoelectrode 152.

[0088] The photoelectrode 150 can be connected to the pad portion TP via photoelectric wiring or a line PSL. According to an embodiment, an amplification circuit AP for amplifying current Ip can also be included between the photoelectric sensor unit PSU and the photodetector 250. After a reverse bias voltage Vbias is applied to the second photoelectrode 152 via a reverse bias voltage source, current Ip can flow from the second photoelectrode 152 to the first photoelectrode 151 when ambient light is incident on the semiconductor pattern SCP and / or the photoconductor PHC. However, when the amount of ambient light incident on the semiconductor pattern SCP or the photoconductor PHC is small, current Ip may not be sufficiently supplied to the photodetector 250 without amplification. Therefore, an amplification circuit AP for amplifying current Ip can be provided between the photoelectric sensor unit PSU and the photodetector 250.

[0089] According to an embodiment, the amplifier circuit AP can be an inverting amplifier circuit including an operational amplifier AMP, a first resistor R1, and a second resistor R2. The operational amplifier AMP can include an inverting input terminal, a non-inverting input terminal, and an output terminal. The input resistor R0 can be located at one end of the photoelectric wiring PSL. One end of the input resistor R0 can be connected to the photoelectric wiring PSL, and the other end can be connected to ground. Due to the input resistor R0, the current Ip supplied from the first photoelectrode 151 can generate an input voltage Vi. The first resistor R1 can be located between the inverting input terminal of the operational amplifier AMP and one end of the input resistor R0, and the second resistor R2 can be located between the inverting input terminal and the output terminal of the operational amplifier AMP, and the non-inverting terminal of the operational amplifier AMP can be connected to ground. In this case, the voltage gain of the operational amplifier AMP can be –(R2 / R1). Therefore, the output voltage Vo can have an amplitude obtained by multiplying the input voltage Vi by the voltage gain.

[0090] However, the amplifier circuit AP is not limited to the above configuration, and various other amplifier circuits can be applied here.

[0091] The touch driver 210, touch detector 230, and photodetector 250 can be integrated into a single touch integrated circuit (IC), but are not limited thereto; and in some embodiments, the touch driver 210 and touch detector 230 can be integrated into a single touch IC, and the photodetector 250 can be located in a portion other than the interior of the touch IC. For example, the photodetector 250 can be disposed in the display panel 300 or can be disposed in a separate flexible circuit board.

[0092] A cover window (CW) can be installed on the sensor unit 100. The cover window (CW) installed on the display panel 300 can protect the display panel 300 from external impacts. The cover window (CW) can be formed from a transparent material such as a film made of tempered glass or plastic.

[0093] The display device 1 may also include optical components.

[0094] In the following text, reference will be made to Figures 5 to 7C A more detailed description of the touch sensor TSM.

[0095] Figure 5 This illustrates an embodiment. Figure 4 A schematic diagram of an enlarged plan view of part A; Figure 6 It shows along Figure 5 A schematic diagram of the cross-section taken by line I-I'; and Figures 7A to 7C It is shown along the embodiment Figure 5 A schematic diagram of the cross-section of the photoelectric sensor unit taken from line II-II'.

[0096] Reference Figure 4 , Figure 5 and Figure 6 The touch sensor unit (TSU) includes a substrate layer 110 or a thin-film encapsulation layer (TFE) stacked on top of it (see [reference]). Figure 2 The touch electrode 120 and the second insulating layer IL2 on the surface.

[0097] The substrate layer 110 may include a portion corresponding to the sensing area SA and a portion corresponding to the non-sensing area NSA. The substrate layer 110 serves as the substrate for the touch electrode 120, and in some embodiments, the substrate layer 110 may also constitute the display panel 300 (see [link to documentation]). Figure 1 The substrate layer 110 may be one of the layers constituting the display panel 300. For example, in an embodiment where the sensor unit 100 and the display panel 300 are integrally formed, the substrate layer 110 may be at least one layer constituting the display panel 300. For example, the substrate layer 110 may be or include a thin-film encapsulation layer TFE (see [link to documentation]). Figure 2 Alternatively, according to embodiments, the substrate layer 110 may be a rigid substrate or a flexible substrate. For example, the substrate layer 110 may be a rigid substrate formed of glass or tempered glass, or a flexible substrate composed of a thin film formed of a flexible plastic material. Hereinafter, the at least one thin-film encapsulation layer, such as TFE, constituting the display panel 300 will be referred to as such. Figure 2 The case of the matrix layer 110 is described as an example.

[0098] Touch electrodes 120 arranged in an island shape and touch wiring or lines TSL electrically connected to touch electrodes 120 can be arranged on a portion of the substrate layer 110 corresponding to the sensing area SA. Touch electrodes 120 can be connected to pad portions TP via touch wiring or lines TSL.

[0099] Reference Figure 4 , Figure 5 and Figure 7A The photoelectric sensor unit PSU may have a semiconductor pattern SCP, a first insulating layer IL1, a photoelectrode 150 (e.g., a first photoelectrode 151 and a second photoelectrode 152) and a second insulating layer IL2 sequentially stacked on a substrate layer 110.

[0100] The semiconductor pattern SCP can include polysilicon or oxide. Additionally, the semiconductor pattern SCP can have one region formed as a P-type semiconductor region SCP_P through an ion-doping process, and another region formed as an N-type semiconductor region SCP_N. For example, Figure 7A The semiconductor pattern SCP shown can be a photodiode with a PN junction structure.

[0101] A first insulating layer IL1 can be formed on a semiconductor pattern SCP, and a contact hole CH can be formed to penetrate the first insulating layer IL1. Additionally, a metal layer can be formed on the first insulating layer IL1 and patterned to form a first photoelectrode 151 and a second photoelectrode 152. The first photoelectrode 151 and the second photoelectrode 152 can contact the P-type semiconductor region SCP_P and the N-type semiconductor region SCP_N, respectively, through the contact hole CH. Figure 7A In the process, the first photoelectrode 151 and the second photoelectrode 152 are in contact with the P-type semiconductor region SCP_P or the N-type semiconductor region SCP_N through their respective contact holes CH, but are not limited thereto, and can be in contact through two or more contact holes CH.

[0102] According to an embodiment, a reverse voltage can be applied to the photodiode. For example, a reverse bias voltage Vbias can be applied to the second photoelectrode 152, which is electrically connected to the N-type semiconductor region SCP_N, using a reverse bias voltage source. When a reverse voltage is applied to the P-type semiconductor region SCP_P and the N-type semiconductor region SCP_N, current typically does not flow. However, when ambient light is incident on the semiconductor pattern SCP, electrons and holes are excited due to the photoelectric effect, generating a reverse current. For example, current Ip can flow from the second photoelectrode 152 to the first photoelectrode 151. In this case, the intensity of current Ip can correspond to the illuminance of the ambient light. That is, as the illuminance of the ambient light increases, a larger current Ip can be generated. The current Ip generated by the photodetector unit PSU can be provided to the photodetector 250.

[0103] Figure 7A A photodiode in which the semiconductor pattern SCP has a PN junction structure is shown, but it is not limited thereto, and can also be a photodiode with a PIN junction structure, which also includes, for example, an intrinsic semiconductor region serving as a depletion layer between a P-type semiconductor region SCP_P and an N-type semiconductor region SCP_N.

[0104] Reference Figure 4 , Figure 5 , Figure 7A and Figure 7B , Figure 7B The semiconductor pattern SCP shown includes a phototransistor with an NPN junction structure, which is related to... Figure 7A The semiconductor pattern SCP shown is different from that of the photodiode with a PN structure. However, Figure 7B The semiconductor pattern SCP shown is an example, and the semiconductor pattern SCP may also include, for example, a phototransistor with a PNP junction structure.

[0105] In the photoelectric sensor unit PSU, the semiconductor pattern SCP, the first insulating layer IL1, the photoelectrode 150 (e.g., the first photoelectrode 151 and the second photoelectrode 152) and the second insulating layer IL2 can be sequentially stacked on the substrate layer 110.

[0106] The semiconductor pattern SCP can include polysilicon or oxide. Additionally, the semiconductor pattern SCP can be ion-doped to form N-type semiconductor regions SCP_N at its two end regions and a P-type semiconductor region SCP_P in the region between the end regions. A first insulating layer IL1 can be formed on the semiconductor pattern SCP, and a contact hole CH can be formed to penetrate the first insulating layer IL1. Furthermore, a metal layer can be formed on the first insulating layer IL1 and patterned to form a first photoelectrode 151 and a second photoelectrode 152. The first photoelectrode 151 and the second photoelectrode 152 can contact the N-type semiconductor region SCP_N formed in the two end regions through the contact hole CH. For ease of description, in the following text, as... Figure 7B As shown, the N-type semiconductor region SCP_N connected to the first photoelectrode 151 is referred to as the left N-type semiconductor region SCP_N, and the N-type semiconductor region SCP_N connected to the second photoelectrode 152 is referred to as the right N-type semiconductor region SCP_N.

[0107] According to an embodiment, a reverse voltage can be applied to the phototransistor. For example, a reverse bias voltage Vbias can be applied to the second photoelectrode 152, which is electrically connected to the right N-type semiconductor region SCP_N, via a reverse bias voltage source. When the reverse voltage is applied to the phototransistor, current typically does not flow. However, when ambient light is incident on the P-type semiconductor region SCP_P of the semiconductor pattern SCP, electrons and holes are excited due to the photoelectric effect, generating a forward current between the P-type semiconductor region SCP_P and the left N-type semiconductor region SCP_N. As a result, a reverse current Ip may flow from the second photoelectrode 152 to the first photoelectrode 151. In this case, the intensity of the current Ip can correspond to the illuminance of the ambient light. That is, as the illuminance of the ambient light increases, a larger current Ip can be generated. The current Ip generated by the photosensor unit PSU can be provided to the photodetector 250.

[0108] Reference Figure 4 , Figure 5 and Figures 7A to 7C , Figure 7C The embodiments shown are similar to Figure 7A The photodiode shown and Figure 7B The difference between the phototransistors shown is that the photocapacitors include a photoconductor PHC but not a semiconductor pattern SCP.

[0109] In the photoelectric sensor unit PSU, a photoconductor PHC, a first insulating layer IL1, a photoelectrode 150 (e.g., a first photoelectrode 151 and a second photoelectrode 152) and a second insulating layer IL2 can be sequentially formed on the substrate layer 110.

[0110] A photoconductor PHC can be a photosensitive pattern in which electrical changes occur depending on whether ambient light is incident on it. For example, a photoconductor PHC can have a thin film or single crystal formed of cadmium sulfide (CdS). Alternatively, a photoconductor PHC can also be formed of lead sulfide (PdS), selenium (Se), zinc oxide (ZnO), or antimony trisulfide (Sb2S3).

[0111] Furthermore, cadmium sulfide (CdS) and lead sulfide (PdS) ​​are colored materials, and the photoconductor PHC can have a mesh structure, allowing light emitted from the display area DA of the display panel 300 to pass through the photoconductor PHC, similar to the photoelectrode 150. The following will refer to... Figure 8C and Figure 9C Describe further details.

[0112] A first insulating layer IL1 can be formed on the photoconductor PHC, and a contact hole CH can be formed to penetrate the first insulating layer IL1. Additionally, a metal layer can be formed on the first insulating layer IL1 and patterned to form a first photoelectrode 151 and a second photoelectrode 152. The first photoelectrode 151 and the second photoelectrode 152 can contact one side and the other side of the photoconductor PHC, respectively, through the contact hole CH. In this configuration, when an input current or an output current flows to one side, another current may flow to the other side.

[0113] According to an embodiment, a certain voltage can be applied to the photocapacitor. For example, a reverse bias voltage Vbias can be applied to the second photoelectrode 152 on the right side using a reverse bias voltage source. When no light is incident, no current flows through the photocapacitor (or photoconductor PHC), but when ambient light is incident on the photoconductor PHC, a current Ip can flow from the second photoelectrode 152 to the first photoelectrode 151. In this case, the intensity of the current Ip can correspond to the illuminance of the ambient light. That is, as the illuminance of the ambient light increases, a larger current Ip can be generated. The current Ip generated by the photodetector unit PSU can be provided to the photodetector 250.

[0114] Reference Figures 4 to 7C The touch electrode 120, touch wiring TSL, photoelectrode 150 (e.g., first photoelectrode 151 and second photoelectrode 152), and photo wiring PSL may comprise conductive materials. For example, the conductive material may comprise a metal or an alloy thereof. Metals may include gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and / or platinum (Pt), etc. Alternatively, the touch electrode 120, touch wiring TSL, photoelectrode 150, and photo wiring PSL may also be formed of transparent conductive materials. Transparent conductive materials may include silver nanowires (AgNW), indium tin oxide (ITO), indium zinc oxide (IZO), zinc antimony oxide (AZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), tin oxide (SnO2), carbon nanotubes, and / or graphene, etc.

[0115] Additionally, the touch electrode 120, touch wiring TSL, photoelectrode 150 (e.g., first photoelectrode 151 and second photoelectrode 152), and photo wiring PSL can also have a single-layer or multi-layer structure. When the touch electrode 120, touch wiring TSL, photoelectrode 150, and photo wiring PSL have a multi-layer structure, they can include multiple metal layers. For example, the touch electrode 120, touch wiring TSL, photoelectrode 150, and photo wiring PSL can have a three-layer structure of titanium, aluminum, and titanium.

[0116] Additionally, the touch electrode 120, touch wiring TSL, photoelectrode 150 (e.g., first photoelectrode 151 and second photoelectrode 152), and photoelectric wiring PSL may have a grid structure through which light emitted from the display area DA of the display panel 300 passes. For example, the touch electrode 120, touch wiring TSL, photoelectrode 150, and photoelectric wiring PSL may include multiple grid holes MH, and a portion of the substrate layer 110 or a portion of the first insulating layer IL1 may be exposed through the grid holes MH. The grid holes MH of the touch electrode 120, touch wiring TSL, photoelectrode 150, and photoelectric wiring PSL may overlap with the light-emitting area of ​​the display panel 300 in a third direction (e.g., the Z-axis direction) that is the thickness direction. Furthermore, the area of ​​the grid holes MH may be larger than the area of ​​the light-emitting area of ​​the display panel 300. Therefore, even when the touch electrode 120, touch wiring TSL, photoelectric electrode 150, and photoelectric wiring PSL are located on the display area DA of the display panel 300, because the mesh hole MH is provided in the touch electrode 120, touch wiring TSL, photoelectric electrode 150, and photoelectric wiring PSL, the light output from the display area DA of the display panel 300 is output to the outside through the touch electrode 120, touch wiring TSL, photoelectric electrode 150, and photoelectric wiring PSL.

[0117] A second insulating layer IL2 may be disposed on the touch electrode 120, touch wiring TSL, photoelectrode 150 (e.g., first photoelectrode 151 and second photoelectrode 152), and photo wiring PSL. For example, the second insulating layer IL2 may cover the touch electrode 120, touch wiring TSL, photoelectrode 150, and photo wiring PSL. That is, the second insulating layer IL2 may be in contact with the touch electrode 120, touch wiring TSL, photoelectrode 150, and photo wiring PSL, and the mesh holes MH may be filled with insulating material forming the second insulating layer IL2, and the second insulating layer IL2 covers the main body portion BD disposed in each of the touch electrode 120, touch wiring TSL, photoelectrode 150, and photo wiring PSL. The touch electrode 120 and photoelectrode 150 may be insulated from each other by the second insulating layer IL2.

[0118] The first insulating layer IL1 and the second insulating layer IL2 may comprise insulating materials. In some embodiments, the insulating materials may be inorganic or organic insulating materials. Inorganic insulating materials may include at least one selected from alumina, titanium dioxide, silicon dioxide, silicon oxynitride, zirconium oxide, and hafnium oxide. Organic insulating materials may include at least one selected from acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, polyurethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0119] Figure 8A This is a schematic diagram illustrating the arrangement relationship between the pixels of the display panel and the touch sensor unit according to an embodiment. Figure 8B This is a schematic diagram illustrating the arrangement relationship between the pixels and photoelectric sensor units of the display panel according to an embodiment. Figure 8C This is a schematic diagram illustrating the arrangement relationship between pixels and photoelectric sensor units of a display panel according to another embodiment. Figure 9A It shows along Figure 8A A schematic diagram of the cross-section taken from line III-III'. Figure 9B It shows along Figure 8B A schematic diagram of the cross-section taken by line IV-IV', and Figure 9C It shows along Figure 8C A schematic diagram of the cross-section taken by line V-V'.

[0120] Reference Figure 1 , Figure 8A and Figure 9A The display panel 300 includes a plurality of pixels PX. Each of the pixels PX may include a light-emitting area EMA and a non-light-emitting area NEM. That is, the display area DA may include a light-emitting area EMA that overlaps with the light-emitting element LD in a third direction (e.g., the Z-axis direction) that is the thickness direction, and a non-light-emitting area NEM other than the light-emitting area EMA.

[0121] A pixel PX may include a first color pixel, a second color pixel, and a third color pixel. The colored pixels PX can be arranged in various ways. In an embodiment, a first row is formed in a first direction (e.g., the X-axis direction), with first color pixels (e.g., red pixels) and second color pixels (e.g., blue pixels) arranged alternately, and a third color pixel (e.g., green pixels) may be arranged in a second row adjacent to the first row in a second direction (e.g., the Y-axis direction). Pixels in the second row may be arranged alternately in the first direction relative to pixels in the first row. The number of third color pixels in the second row may be twice the number of first color pixels or second color pixels in the first row. The arrangement of the first and second rows may be repeated in the second direction (e.g., the Y-axis direction).

[0122] The sizes of the luminous areas (EMA) of pixels PX of different colors can be different from each other. For example, the luminous area EMA_B of the second color pixel can be larger than the luminous area EMA_R of the first color pixel, and the luminous area EMA_G of the third color pixel can be smaller than the luminous area EMA_R of the first color pixel.

[0123] The shape of the luminous area EMA in each of the color pixels PX can typically be essentially octagonal. However, the shape of the luminous area EMA is not limited to this and can be circular, a polygon such as a rhombus, or a polygon with rounded corners, etc.

[0124] The touch electrode 120 can be divided into a mesh hole MH and a main body portion BD. The mesh hole MH can overlap with the light-emitting area EMA in the thickness direction, and the area of ​​the mesh hole MH can be larger than the area of ​​the light-emitting area EMA. The main body portion BD can overlap with the non-light-emitting area NEM in the thickness direction, and the width of the main body portion BD can be smaller than the width of the non-light-emitting area NEM. With this structure, light emitted from the light-emitting area EMA of the display panel 300 can effectively pass through the touch electrode 120.

[0125] like Figure 9A As shown, a first electrode EL1 is disposed for each of the pixels PX on the substrate BSL. A pixel defining layer PDL exposing the first electrode EL1 may be disposed on the first electrode EL1. The pixel defining layer PDL is disposed in the non-light-emitting region NEM.

[0126] The light-emitting layer EML can be disposed on the first electrode EL1 exposed by the pixel-defining layer PDL, and the second electrode EL2 can be disposed on the light-emitting layer EML. The second electrode EL2 can be disposed throughout the light-emitting area EMA and the non-light-emitting area NEM, without pixel distinction. The first electrode EL1, the light-emitting layer EML, and the second electrode EL2 constitute the light-emitting element LD.

[0127] A thin-film encapsulation layer TFE, comprising a first inorganic layer IOL1, an organic layer OL, and a second inorganic layer IOL2, is disposed on the second electrode EL2. The touch electrode 120 and the second insulating layer IL2 can be sequentially disposed on the thin-film encapsulation layer TFE. The first inorganic layer IOL1 and the second inorganic layer IOL2 protect the element layer DSL from moisture and oxygen, and the organic layer OL protects the element layer DSL from foreign matter such as dust particles.

[0128] The main body portion (BD) can be overlapped with the pixel-defining layer (PDL) and can be located within the non-emissive region (NEM). That is, since it does not overlap with the emissive region (EMA), the main body portion (BD) will not interfere with emission.

[0129] Reference Figure 1 , Figure 8B and Figure 9B , Figure 9B The structure of the overlapping area of ​​the display panel 300's pixels PX and photoelectric sensor unit PSU shown in the figure is similar to... Figure 9AThe difference in the structure of the overlapping areas of the display panel 300's pixels PX and touch sensor unit TSU shown is that the first insulating layer IL1 and the semiconductor pattern SCP are located between the thin-film encapsulation layer TFE and the photoelectrode 150. The remaining configuration is the same as the reference. Figure 9A The configurations described are the same, and any redundant descriptions do not need to be repeated.

[0130] Specifically, the semiconductor pattern SCP may include polysilicon or oxide. Additionally, the semiconductor pattern SCP may undergo an ion-doping process to form a P-type semiconductor region SCP_P and / or an N-type semiconductor region SCP_N. The semiconductor pattern SCP may have a reference... Figure 7A The described PN junction structure or PIN junction structure, or may have a reference Figure 7B The NPN junction structure or PNP junction structure is described. The first insulating layer IL1 can be formed on the semiconductor pattern SCP.

[0131] The photoelectrode 150 can be divided into a mesh aperture MH and a main body portion BD. The mesh aperture MH can overlap with the light-emitting region EMA in the thickness direction, and the area of ​​the mesh aperture MH can be larger than the area of ​​the light-emitting region EMA. The main body portion BD can overlap with the non-light-emitting region NEM in the thickness direction, and the width of the main body portion BD can be smaller than the width of the non-light-emitting region NEM. With this structure, light emitted from the light-emitting region EMA of the display panel 300 can effectively pass through the photoelectrode 150.

[0132] The main body portion (BD) can be overlapped with the pixel-defining layer (PDL) and can be located within the non-emissive region (NEM). That is, since it does not overlap with the emissive region (EMA), the main body portion (BD) will not interfere with emission.

[0133] Each of the first insulating layer IL1 and the semiconductor pattern SCP can overlap with the luminescent region EMA and the non-luminescent region NEM in the thickness direction.

[0134] Reference Figure 1 , Figure 8C and Figure 9C , Figure 9C The structure of the overlapping area of ​​the display panel 300's pixels PX and photoelectric sensor unit PSU shown in the figure is similar to... Figure 9B The difference in the structure of the overlapping areas of the pixel PX and photoelectric sensor unit PSU in the display panel 300 shown is that the photoconductor PHC, instead of the semiconductor pattern SCP, is located between the first insulating layer IL1 and the thin-film encapsulation layer TFE. The remaining configuration is the same as the reference. Figure 9B The configurations described are essentially the same, and any redundant descriptions need not be repeated.

[0135] Specifically, the photoconductor PHC can be divided into a grid aperture MH' and a main body portion BD'. The grid aperture MH' may overlap with the light-emitting region EMA and the grid aperture MH of the photoelectrode 150 in the thickness direction (e.g., the Z-axis direction), and the area of ​​the grid aperture MH' may be larger than the area of ​​the light-emitting region EMA and smaller than the area of ​​the grid aperture MH of the photoelectrode 150. However, this is just an example, and the area of ​​the grid aperture MH' may be substantially the same as the area of ​​the light-emitting region EMA and the grid aperture MH of the photoelectrode 150.

[0136] The main body portion BD' can overlap with the non-light-emitting region NEM and the main body portion BD of photoelectrode 150 in the thickness direction, and the width of the main body portion BD' can be smaller than the width of the non-light-emitting region NEM, but larger than the width of the main body portion BD of photoelectrode 150. However, this is just an example, and the area of ​​the mesh-like main body portion BD' can be substantially the same as the area of ​​the light-emitting region EMA and the area of ​​the mesh-like main body portion BD of photoelectrode 150. With this structure, light emitted from the light-emitting region EMA of display panel 300 can effectively pass through the photoconductor PHC and photoelectrode 150.

[0137] According to an embodiment, the first insulating layer IL1 can be formed of an organic material and can fill the mesh holes MH' of the photoconductor PHC. In alternative embodiments, for example, in addition to... Figure 8C and Figure 9C In addition to the photoelectrode 150 (e.g., the first photoelectrode 151, the second photoelectrode 152) in the embodiments, such as Figure 8A and Figure 9A The touch electrode 120 in the embodiments or the touch electrode 120' described below may also be replaced and / or added. Repeated descriptions may be omitted.

[0138] Figure 10 This is a signal timing diagram illustrating an active-mode organic light-emitting diode (AMOLED) pulse drive (AID) method that uses an adjusted duty cycle of the light emission control signal. Figure 10 The illustration shows that when the light emission control signals EM1 and EM2 are at a logic high level, the pixel is in a non-light emission state, and when the light emission control signals EM1 and EM2 are at a logic low level, the pixel is in a light emission state, but the embodiment is not limited to this.

[0139] The AID method is a method of controlling brightness by controlling the duty cycle of the emission control signal to correspond to a set dimming step, and changing the brightness by altering the on or off period of a cycle 1F of the emission control signal used to control the emission and non-emission of pixels. That is, the duty cycle (hereinafter referred to as AOR) of the emission control signal can be set to 0%, 20%, 40%, 60%, 80%, and 95% to adjust the brightness by controlling the AOR of the emission control signal. However, this is just an example, and various duty cycles can be set according to design standards and / or user preferences. According to an embodiment, Figure 1 The display device 1 can set the number of AID cycles to four. That is, the number of duty cycles for the light emission control signal included in one frame can be four.

[0140] Reference Figure 10 In the 100-nit dimming step, the on-time P4 of the light emission control signal EM2 is shorter than the on-time P2 of the light emission control signal EM1 in the 300-nit dimming step. Conversely, the off-time P3 of the light emission control signal EM2 in the 100-nit dimming step is longer than the off-time P1 in the 300-nit dimming step. Because pixels emit light during the on-time of the light emission control signal and do not emit light during the off-time, the on-time of the light emission control signal may decrease, and the brightness may decrease as the off-time of the light emission control signal increases. In this case, it is possible to consider... Figure 1 The unique features of the display panel 300 are used to set the AOR of the light emission control signals EM1 and EM2 for each brightness level.

[0141] Figure 11 It is shown Figure 1 The circuit diagram of the example pixel shown in the image is as follows, and Figure 12 This illustrates an embodiment. Figure 11 The signal timing diagram of the pixel driving waveform is shown in the figure.

[0142] Reference Figure 11 A pixel PX may include a pixel circuit PXC and a light-emitting element LD. The pixel circuit PXC includes transistors T1 to T7 and a capacitor Cst.

[0143] The first transistor T1 through the seventh transistor T7 can be thin-film transistors (TFTs), and the first transistor T1 through the seventh transistor T7 are shown as P-type transistors by way of example, but can be configured as N-type transistors and can also be inverted. Figure 12 The pixel circuit PXC is driven by a driving waveform. In this embodiment, the pixel circuit PXC is shown as comprising seven transistors, from the first transistor T1 to the seventh transistor T7, and a capacitor Cst, but is not limited thereto. The number of transistors and capacitors constituting the pixel circuit PXC can be varied.

[0144] One electrode of capacitor Cst can be connected to the first power supply voltage VDD, and the other electrode can be connected to the gate electrode of the first transistor T1.

[0145] The first transistor T1 may have an electrode connected to the other electrode of the fifth transistor T5, an electrode connected to the other electrode of the sixth transistor T6, and a gate electrode connected to the other electrode of the capacitor Cst. The first transistor T1 may be referred to as a driving transistor.

[0146] The second transistor T2 may have one electrode connected to the data line DLm, another electrode connected to one electrode of the first transistor T1, and a gate electrode connected to the scan line SLn. The second transistor T2 may be referred to as a switching transistor or a scan transistor, etc.

[0147] The third transistor T3 may have one electrode connected to the other electrode of the first transistor T1, another electrode connected to the gate electrode of the first transistor T1, and a gate electrode connected to the scan line SLn.

[0148] The fourth transistor T4 may have one electrode connected to the gate electrode of the first transistor T1, another electrode connected to the initialization voltage Vint, and a gate electrode connected to the previous scan line SLn-1.

[0149] The fifth transistor T5 may have one electrode connected to the first power supply voltage VDD, another electrode connected to one electrode of the first transistor T1, and a gate electrode connected to the light emission control signal line ELn.

[0150] The sixth transistor T6 may have one electrode connected to the other electrode of the first transistor T1, another electrode connected to the anode electrode of the light-emitting element LD, and a gate electrode connected to the light-emitting control signal line ELn. Transistors T5 and T6 may be referred to as light-emitting transistors.

[0151] The seventh transistor T7 may have one electrode connected to the anode electrode of the light-emitting element LD, another electrode connected to the initialization voltage Vint, and a gate electrode connected to the current scan line. In another embodiment, the gate electrode of the seventh transistor T7 may also be connected to another scan line. For example, the gate electrode of the seventh transistor T7 may also be connected to the previous scan line SLn-1, the scan line preceding the previous scan line SLn-1, or the next scan line (the (n+1)th scan line). When a scan signal with a conduction level is applied to the current scan line, the seventh transistor T7 transmits the initialization voltage Vint to the anode electrode of the light-emitting element LD, thereby initializing the amount of charge accumulated in the light-emitting element LD.

[0152] The light-emitting element (LD) can have an anode electrode connected to the other electrode of the sixth transistor T6 and a cathode electrode connected to the second power supply voltage VSS. The LD can emit light itself by receiving a driving voltage via the pixel circuit PXC. The LD can be composed of organic or inorganic light-emitting diodes, such as micro-light-emitting diodes (LEDs) or quantum dot LEDs. Alternatively, the LD can also be a light-emitting element made of both organic and inorganic materials.

[0153] Reference Figure 12 According to embodiments of this disclosure, during the initialization period, a previous scan signal Sn-1 with a logic low level is supplied through the previous scan line SLn-1. A fourth transistor T4 can be turned on in response to the previous scan signal Sn-1 with a logic low level. An initialization voltage Vint can be transmitted through the fourth transistor T4 to the gate electrode of the first transistor T1, and the first transistor T1 can be initialized by the initialization voltage Vint.

[0154] Subsequently, a logic-low scan signal Sn can be supplied via scan line SLn during the data programming period. Then, the second transistor T2, the third transistor T3, and the seventh transistor T7 are turned on in response to the logic-low scan signal Sn.

[0155] In this configuration, the first transistor T1 is diode-connected via the third transistor T3, which is turned on and positively biased.

[0156] Then, a compensation voltage Vdata+Vth (where Vth is negative) obtained by subtracting the absolute amplitude of the threshold voltage Vth of the first transistor T1 from the data signal Vdata supplied from the data line DLm is applied to the first electrode of the first transistor T1.

[0157] A first power supply voltage VDD and a compensation voltage Vdata+Vth are applied across capacitor Cst, and the charge corresponding to the voltage difference between the two ends is stored in capacitor Cst. Then, during the light-emitting period Ton, the light-emitting control signal EMn supplied from the light-emitting control signal line ELn changes from logic high to logic low. During the light-emitting period Ton, the fifth transistor T5 and the sixth transistor T6 are turned on by the logic low light-emitting control signal EMn.

[0158] The driving current Id is generated due to the voltage difference between the gate electrode voltage of the first transistor T1 and the first power supply voltage VDD, and the driving current Id is supplied to the light-emitting element LD through the sixth transistor T6.

[0159] During the light-emitting period Ton, the gate-source voltage Vgs of the first transistor T1 can be maintained at {(Vdata+Vth)-VDD} by the capacitor Cst, and the drive current Id according to the current-voltage relationship can be the square of the value obtained by subtracting the threshold voltage from the gate-source voltage {(Vdata-VDD)}. 2 The brightness of the organic light-emitting diode (LD) is proportional to the data signal Vdata.

[0160] Additionally, the luminous brightness can be controlled by the luminous control signal EMn based on the duty cycle (AOR) of the non-luminous period Toff of the luminous element LD. Even when the same data signal Vdata is applied, as one cycle including the luminous period Ton and the non-luminous period Toff increases, for example, the AOR of the non-luminous period Toff relative to the display period of one frame increases, the luminous brightness of the luminous element LD decreases. Therefore, the brightness of the luminous element LD can be controlled based on the data signal Vdata and the luminous control signal EMn.

[0161] Now refer to Figure 1 and Figures 10 to 12 According to embodiments of this disclosure, the panel driver 400 may supply the control signal CS to the controller 200 of the touch sensor TSM only during a period that overlaps with the off-time of the light emission control signal EMn. In this case, the control signal CS may be a current Ip for detecting the current flowing through the photoelectric sensor unit PSU between the first photoelectrode 151 and the second photoelectrode 152 (see...). Figure 4 The signal is such that the controller 200 of the touch sensor TSM can detect the current Ip passing through the photoelectric sensor unit PSU only during the off period of the light emission control signal EMn.

[0162] According to an embodiment, the controller 200 can detect the current Ip only during the off-period of the light emission control signal EMn supplied by the light emission control signal line ELn connected to the row of at least one pixel PX located adjacent to the photoelectric sensor unit PSU.

[0163] like Figure 8B and Figure 9BAs shown, the semiconductor pattern SCP can be disposed overlapping the light-emitting region EMA in a third direction (e.g., the Z-axis direction) as the thickness direction. Therefore, in addition to ambient light incident from outside the display device 1, the semiconductor pattern SCP can also obtain a photoelectric effect due to light incident from the light-emitting region EMA of the display panel 300. For example, when a photoelectric effect is obtained due to light incident from the light-emitting region EMA of the display panel 300, the current Ip flowing between the first photoelectrode 151 and the second photoelectrode 152 may increase. Therefore, when the current Ip through the photoelectric sensor unit PSU is detected only during the off period of the light emission control signal EMn, only the current Ip generated by ambient light incident from outside can be detected, and thus the efficiency of the semiconductor pattern SCP can be increased.

[0164] Other embodiments will be described below. In the following embodiments, descriptions of configurations identical to those in the foregoing embodiments may be omitted or simplified, and the differences between them will be described primarily.

[0165] Figure 13 This is a schematic diagram showing a plan view of a sensor unit included in a display device according to another embodiment. Figure 14 It is shown Figure 13 A schematic diagram of an enlarged plan view of part B. Figure 15A and Figure 15B This is a schematic diagram showing a plan view of a sensor unit according to an embodiment of the present disclosure, illustrating the first metal layer and the second metal layer, respectively. Figure 15C This is a schematic diagram showing a cross-sectional view of a sensor unit according to an embodiment of the present disclosure, and can correspond to along... Figure 14 The cross-sectional view taken from line VI-VI'.

[0166] Reference Figure 13 and Figure 14 , Figure 13 The display device shown in the figure and Figure 1 The difference in the display device 1 shown is that the sensor unit 100 includes two metal layers and a through-hole TH. In this case, the through-hole TH can penetrate the display device in a third direction (e.g., the Z-axis direction), and electronic components can be disposed in the through-hole TH. The electronic components can be camera components, speaker components, light sensing components, heat sensing components, or microphone components, etc.

[0167] Reference Figure 3 , Figure 13 and Figure 14 The sensor unit 100 may include a touch sensor unit (TSU) and a photoelectric sensor unit (PSU). In this case, the sensor unit 100 may be formed on the substrate layer 110 or the thin-film encapsulation layer (TFE) (see [link]). Figure 2The sensor area SA can be a region that senses touch input, while the non-sensing regions NSA1 and NSA2 can be regions that do not detect touch input.

[0168] The touch sensor unit (TSU) may include touch electrodes 120' located in the sensing area SA. Touch electrodes 120' may include a first sensing electrode SP1 and a second sensing electrode SP2, as well as a first connecting electrode CP1 and a second connecting electrode CP2. The first sensing electrode SP1 is arranged in the X direction, and the second sensing electrode SP2 is arranged in the Y direction, intersecting the first sensing electrode SP1. The first sensing electrode SP1 and the second sensing electrode SP2 may intersect each other perpendicularly.

[0169] The first sensing electrode SP1 and the second sensing electrode SP2 may have adjacent angles to each other. The first sensing electrode SP1 can be electrically connected to each other through the first connecting electrode CP1, and the second sensing electrode SP2 can be electrically connected to each other through the second connecting electrode CP2.

[0170] The first sensing electrode SP1 and the second sensing electrode SP2 can be electrically connected to the controller 200 and can receive a drive signal Ts for detecting touch from the controller 200. Additionally, the touch electrode 120' can output a sensing signal Rs for detecting touch to the controller 200. The first sensing electrode SP1 and the second sensing electrode SP2 can be connected to the pad portion TP via touch wiring TSL.

[0171] Reference Figure 15A and Figure 15B The first sensing electrode SP1 and the second sensing electrode SP2 can be disposed in the same layer. The first metal layer MTL1 may include a first connection electrode CP1 (see...). Figure 15A The second metal layer MTL2 may include a first sensing electrode SP1, a second sensing electrode SP2, and a second connection electrode CP2 (see [reference]). Figure 15B ).

[0172] The second sensing electrode SP2 can be connected via a second connecting electrode CP2 arranged in the same layer. The first sensing electrode SP1 can be arranged in the X direction and can be connected via a first connecting electrode CP1 arranged in a different layer.

[0173] Reference Figure 15CThe third insulating layer IL3 can be located between the first metal layer MTL1 and the second metal layer MTL2. The first sensing electrode SP1, disposed in the second metal layer MTL2, can be connected to the first connecting electrode CP1 disposed in the first metal layer MTL1 through the contact hole CH of the third insulating layer IL3. The second metal layer MTL2 can be covered by the second insulating layer IL2. For ease of description, Figure 14 and Figures 15A to 15C The first sensing electrode SP1, the first connecting electrode CP1, the second sensing electrode SP2, and the second connecting electrode CP2 are briefly shown, but they can have the following characteristics: Figure 5 The grid structure shown.

[0174] Figures 16A to 16C It is shown along various embodiments Figure 14 A schematic diagram of the cross-section of the photoelectric sensor unit taken by line VII-VII'.

[0175] Reference Figure 14 and Figures 16A to 16C , Figures 16A to 16C The embodiments shown are similar to Figures 7A to 7C The difference in the embodiment shown is that it also includes a first metal layer MTL1 and a third insulating layer IL3.

[0176] Specifically, such as Figure 16A As shown, the photoelectric sensor unit PSU may include a first metal layer MTL1, a third insulating layer IL3, a semiconductor pattern SCP, a first insulating layer IL1, a photoelectrode 150 (or a second metal layer MTL2) and a second insulating layer IL2 sequentially formed on the substrate layer 110.

[0177] The first metal layer MTL1 may include a first connection electrode CP1. However, the photoelectrode 150 is not electrically connected to the first sensing electrode SP1 or the second sensing electrode SP2 because it is formed by using a virtual touch electrode. Therefore, the first connection electrode CP1 may not be formed in the first metal layer MTL1 that overlaps with the photoelectric sensor unit PSU.

[0178] A third insulating layer IL3 may be disposed on the first metal layer MTL1. The third insulating layer IL3 may include an insulating material. In some embodiments, the insulating material may be an inorganic insulating material or an organic insulating material. Inorganic insulating materials may include at least one selected from alumina, titanium dioxide, silicon dioxide, silicon oxynitride, zirconium oxide, and hafnium oxide. Organic insulating materials may include at least one selected from acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, polyurethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0179] The semiconductor pattern SCP can include polysilicon or oxide. Additionally, the semiconductor pattern SCP can be ion-doped to form one region of the semiconductor pattern SCP as a P-type semiconductor region SCP_P, and another region besides this one region as an N-type semiconductor region SCP_N. That is, Figure 16A The semiconductor pattern SCP shown is formed as a photodiode with a PN junction structure.

[0180] A first insulating layer IL1 can be formed on a semiconductor pattern SCP, and a contact hole CH can be formed to penetrate the first insulating layer IL1. Additionally, a metal layer can be formed on the first insulating layer IL1 and patterned to form a first photoelectrode 151 and a second photoelectrode 152. The first photoelectrode 151 and the second photoelectrode 152 can respectively contact the P-type semiconductor region SCP_P and the N-type semiconductor region SCP_N through the contact hole CH. Figure 16A In the process, the first photoelectrode 151 and the second photoelectrode 152 are respectively in contact with the P-type semiconductor region SCP_P or the N-type semiconductor region SCP_N through their respective contact holes CH, but are not limited thereto, and can be in contact through two or more contact holes CH.

[0181] According to an embodiment, a reverse voltage can be applied to the photodiode. For example, a reverse bias voltage Vbias can be applied to the second photoelectrode 152, which is electrically connected to the N-type semiconductor region SCP_N, using a reverse bias voltage source. When a reverse voltage is applied to the P-type semiconductor region SCP_P and the N-type semiconductor region SCP_N, current typically does not flow; however, when ambient light is incident on the semiconductor pattern SCP, electrons and holes are excited due to the photoelectric effect to generate a reverse current. For example, current Ip can flow from the second photoelectrode 152 to the first photoelectrode 151. In this case, the intensity of current Ip can correspond to the illuminance of the ambient light. That is, as the illuminance of the ambient light increases, a larger current Ip can be generated. The current Ip generated by the photoelectric sensor unit PSU can be provided to the photodetector 250.

[0182] Figure 16A A photodiode in which the semiconductor pattern SCP has a PN junction structure is shown, but is not limited thereto. The photodiode may also be a photodiode having a PIN junction structure that includes an intrinsic semiconductor region, which is a depletion layer between a P-type semiconductor region SCP_P and an N-type semiconductor region SCP_N.

[0183] Reference Figure 16B , Figure 16B The semiconductor pattern SCP shown in the image is related to... Figure 16AThe semiconductor pattern SCP of the photodiode with a PN junction structure shown in the figure differs in that... Figure 16B The semiconductor pattern SCP shown is a phototransistor with an NPN junction structure. However, Figure 16B The semiconductor pattern SCP shown is an example and can also be applied to phototransistors with a PNP junction structure.

[0184] The photoelectric sensor unit PSU may include a first metal layer MTL1, a third insulating layer IL3, a semiconductor pattern SCP, a first insulating layer IL1, a photoelectrode 150 (or a second metal layer MTL2) and a second insulating layer IL2 sequentially formed on a substrate layer 110.

[0185] The semiconductor pattern SCP can include polycrystalline silicon or oxide. Additionally, the semiconductor pattern SCP can be ion-doped to form N-type semiconductor regions SCP_N at its two ends and a P-type semiconductor region SCP_P between the two ends. A first insulating layer IL1 can be formed on the semiconductor pattern SCP, and a contact hole CH can be formed to penetrate the first insulating layer IL1. Furthermore, a metal layer can be formed on the first insulating layer IL1 and patterned to form a first photoelectrode 151 and a second photoelectrode 152. The first photoelectrode 151 and the second photoelectrode 152 can contact the N-type semiconductor region SCP_N formed in the two end regions through the contact hole CH. For ease of description, in the following text, as... Figure 16B As shown, the N-type semiconductor region SCP_N connected to the first photoelectrode 151 is referred to as the left N-type semiconductor region SCP_N, and the N-type semiconductor region SCP_N connected to the second photoelectrode 152 is referred to as the right N-type semiconductor region SCP_N.

[0186] According to an embodiment, a reverse voltage can be applied to the phototransistor. For example, a reverse bias voltage Vbias can be applied to the second photoelectrode 152, which is electrically connected to the right N-type semiconductor region SCP_N, via a reverse bias voltage source. When the reverse voltage is applied to the phototransistor, no current flows. However, when ambient light is incident on the P-type semiconductor region SCP_P of the semiconductor pattern SCP, electrons and holes are excited due to the photoelectric effect, generating a forward current between the P-type semiconductor region SCP_P and the left N-type semiconductor region SCP_N. As a result, a reverse current Ip flows from the second photoelectrode 152 to the first photoelectrode 151. In this case, the intensity of the current Ip can correspond to the brightness of the ambient light. That is, as the illuminance of the ambient light increases, a larger current Ip can be generated. The current Ip generated by the photoelectric sensor unit PSU can be provided to the photodetector 250.

[0187] Reference Figure 16C , Figure 16C The embodiments shown are similar to Figure 16A and Figure 16B The difference between the photodiode and phototransistor shown is that the photocapacitor includes a photoconductor PHC instead of a semiconductor pattern SCP.

[0188] The photoelectric sensor unit PSU may include a first metal layer MTL1, a third insulating layer IL3, a photoconductor PHC, a first insulating layer IL1, a photoelectrode 150 (or a second metal layer MTL2) and a second insulating layer IL2 sequentially formed on a substrate layer 110.

[0189] A photoconductor PHC can be a photosensitive pattern in which electrical changes occur depending on whether ambient light is incident. For example, a photoconductor PHC can have a thin film or single crystal formed of cadmium sulfide (CdS). Alternatively, a photoconductor PHC can also be formed of lead sulfide (PdS), selenium (Se), zinc oxide (ZnO), or antimony trisulfide (Sb2S3).

[0190] Additionally, although not shown in the accompanying drawings, cadmium sulfide (CdS) and lead sulfide (PdS) ​​are colored materials, and the photoconductor PHC can have a mesh structure, allowing light output from the display area DA of the display panel 300 to pass through the photoconductor PHC, similar to the photoelectrode 150.

[0191] A first insulating layer IL1 can be formed on the photoconductor PHC, and a contact hole CH can be formed to penetrate the first insulating layer IL1. Additionally, a metal layer can be formed on the first insulating layer IL1 and patterned to form a first photoelectrode 151 and a second photoelectrode 152. The first photoelectrode 151 and the second photoelectrode 152 can contact one side and the other side of the photoconductor PHC, respectively, through the contact hole CH. In this configuration, when an input current or an output current flows to one side, another current may flow to the other side.

[0192] According to an embodiment, a certain voltage can be applied to the photocapacitor. For example, a reverse bias voltage Vbias can be applied to the second photoelectrode 152 on the right side using a reverse bias voltage source. When no light is incident, no current flows through the photocapacitor (or photoconductor PHC), but when ambient light is incident on the photoconductor PHC, a current Ip can flow from the second photoelectrode 152 to the first photoelectrode 151. In this case, the intensity of the current Ip can correspond to the brightness of the ambient light. That is, as the illuminance of the ambient light increases, a larger current Ip can be generated. The current Ip generated by the photodetector unit PSU can be provided to the photodetector 250.

[0193] Figure 17 It is shown Figure 13 A schematic diagram of an enlarged planar view of part C.

[0194] Reference Figures 13 to 17 The non-sensing region NSA2 can be the area between the via TH and the sensing region SA, and has the same shape as the via TH. The area of ​​the non-sensing region NSA2 can be larger than the area of ​​the via TH. For example, the non-sensing region NSA2 can have a circular shape (or annular shape) including a circular cavity at the center.

[0195] In the non-sensing region NSA2, two first sensing electrodes SP1 spaced apart in a first direction (e.g., the X-axis direction) can be connected to each other via a first connecting electrode CP1 that bypasses the periphery of the through-hole TH, with the through-hole TH situated between the two first sensing electrodes SP1. Similarly, in the non-sensing region NSA2, two second sensing electrodes SP2 spaced apart in a second direction (e.g., the Y-axis direction) can be connected to each other via a second connecting electrode CP2 that bypasses the periphery of the through-hole TH, with the through-hole TH situated between the two second sensing electrodes SP2.

[0196] The first connecting electrode CP1 and the first sensing electrode SP1 are located in different layers, and the first sensing electrode SP1 can be connected to the first connecting electrode CP1 through the contact hole CH formed in the third insulating layer IL3.

[0197] Although not shown in the accompanying drawings, the hole non-sensing area NSA2 may correspond to the hole non-display area of ​​the display device 1. The hole non-display area may be the area surrounding the through hole TH and in which no image is displayed.

[0198] A photoelectric sensor unit (PSU) can be formed in the non-sensing region NSA2 of the aperture. According to an embodiment, the photoelectric sensor units (PSUs) can be formed one after another around the through-hole TH in regions corresponding to the first sensing electrode SP1 and the second sensing electrode SP2, respectively. For example, when two first sensing electrodes SP1 and two second sensing electrodes SP2 are disposed around the through-hole TH, four photoelectric sensor units (PSUs) can be arranged in the non-sensing region NSA2 of the aperture.

[0199] The first photoelectrode 151 and the second photoelectrode 152 may have a square shape, but are not limited thereto. The first photoelectrode 151 and the second photoelectrode 152 may have various shapes, such as polygonal and circular shapes. Furthermore, according to the embodiment, the first photoelectrode 151 and the second photoelectrode 152 are formed using a portion of the first sensing electrode SP1 and the second sensing electrode SP2, and therefore the area of ​​the first photoelectrode 151 and the second photoelectrode 152 may be smaller than the area of ​​the first sensing electrode SP1 and the second sensing electrode SP2.

[0200] The semiconductor pattern SCP or photoconductor PHC can be formed to overlap with the photoelectrode 150 in a third direction (e.g., the Z-axis direction) as the thickness direction. The semiconductor pattern SCP or photoconductor PHC can have the same shape as the touch electrode 120 and the photoelectrode 150. For example, the semiconductor pattern SCP or photoconductor PHC can have a square shape, but is not limited to this. The semiconductor pattern SCP or photoconductor PHC can have various shapes, such as polygonal and circular shapes. Additionally, the semiconductor pattern SCP or photoconductor PHC can have a larger area than the photoelectrode 150. However, this is just an example, and the shape and area of ​​the semiconductor pattern SCP or photoconductor PHC can be changed as long as ambient light is absorbed and electrons and holes are excited due to the photoelectric effect to generate current.

[0201] The cross-sectional structure of the photoelectric sensor unit (PSU) and Figures 16A to 16C The cross-sectional structures shown are similar, and redundant descriptions will not be repeated. However, the non-sensing region NSA2 includes a first connecting electrode CP1 that bypasses the through-hole TH, and therefore, in the region where the photoelectric sensor unit PSU is formed to overlap with the first connecting electrode CP1 in a third direction (e.g., the Z-axis direction) as the thickness direction, the first connecting electrode CP1 may be included in the first metal layer MTL1.

[0202] Although the above description has been made with reference to embodiments of the present disclosure, those skilled in the art will understand that various modifications and changes can be made to the present disclosure without departing from the concept and scope of the present disclosure as set forth in the appended claims.

Claims

1. A display device, comprising: The display panel includes a display area and a non-display area; and A sensor unit is disposed on the display panel and includes a sensing area and a non-sensing area. The sensor unit includes: a touch sensor unit comprising multiple touch electrodes; and a photoelectric sensor unit comprising multiple photoelectric electrodes; and The touch electrodes are arranged in a matrix in the sensing area, and the photoelectrodes are arranged between the touch electrodes in a plan view.

2. The display device according to claim 1, wherein, The photoelectric sensor unit includes a first photoelectrode, a second photoelectrode, and a semiconductor pattern, and The first photoelectrode and the second photoelectrode overlap with the semiconductor pattern in the thickness direction.

3. The display device according to claim 2, wherein, The semiconductor pattern includes polycrystalline silicon or oxide.

4. The display device according to claim 2, wherein, An insulating layer is located between at least one of the first photoelectrode and the second photoelectrode and the semiconductor pattern.

5. The display device according to claim 4, wherein, The semiconductor pattern includes P-type semiconductor regions and N-type semiconductor regions. The first photoelectrode is electrically connected to the P-type semiconductor region through a first contact hole in the insulating layer, and The second photoelectrode is electrically connected to the N-type semiconductor region through a second contact hole in the insulating layer.

6. The display device according to claim 4, wherein, The semiconductor pattern includes N-type semiconductor regions formed at both ends, and includes a P-type semiconductor region between the N-type semiconductor regions. The first photoelectrode and the second photoelectrode are electrically connected to their respective N-type semiconductor regions through respective contact holes formed in the insulating layer.

7. The display device according to claim 2, wherein, The display device further includes a controller, the controller including a photodetector that detects the current flowing between the first photoelectrode and the second photoelectrode when ambient light is incident on the semiconductor pattern.

8. The display device according to claim 7, wherein, A reverse bias voltage is applied to the second photoelectrode, and the first photoelectrode is connected to the photodetector.

9. The display device according to claim 8, wherein, The display device further includes: The current amplifier between the photoelectric sensor unit and the photoelectric detector.

10. The display device according to claim 2, wherein, The display area includes a light-emitting area that overlaps with the light-emitting element in the thickness direction and a non-light-emitting area other than the light-emitting area. The first photoelectrode and the second photoelectrode are formed into a grid structure, each including a main body and grid holes. The main portion of each of the first photoelectrode and the second photoelectrode overlaps with the non-light-emitting region in the thickness direction.

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