Temperature control apparatus and method for a transfer chamber

Abstract

This invention relates to a temperature control device and method for a transfer chamber, belonging to the field of semiconductor equipment manufacturing technology. It addresses the problem that inconsistent wafer temperatures across different processes can negatively impact the next process step due to the wafer's current temperature. The device includes a moving component, a control component, and a temperature control component. The moving component carries the wafer within the transfer chamber. The temperature control component, located at the bottom of the transfer chamber, includes a cooling zone component and a heating zone component. The control component detects the wafer surface temperature and the corresponding process to be executed. Based on the wafer surface temperature and the corresponding process, the moving component moves the wafer to a preset position and generates a corresponding temperature control command. After the wafer reaches the preset position, the temperature control component executes the temperature control command. The technical solution provided by this invention can improve the overall efficiency of the process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment manufacturing technology, and in particular to a temperature control device and method for a transfer chamber. Background Technology

[0002] During the etching process, the wafer needs to be moved into the transfer chamber, and then from the transfer chamber into the equipment corresponding to other processes.

[0003] However, the temperature of the wafer varies in each process, which means that when the wafer enters the next process, its current temperature will have a certain negative impact on the next process, thereby reducing the overall efficiency of the process. Summary of the Invention

[0004] Based on the above analysis, the present invention aims to provide a temperature control device and method for a transfer chamber to improve the overall efficiency of the process.

[0005] The objective of this invention is mainly achieved through the following technical solutions:

[0006] In a first aspect, embodiments of the present invention provide a temperature control device for a transfer chamber, comprising:

[0007] Moving components, control components, and temperature control components;

[0008] The moving component is disposed in the transfer chamber and is used to carry the wafer;

[0009] The temperature control assembly is located at the bottom of the transfer chamber and includes a cooling zone assembly and a heating zone assembly;

[0010] The control component is used to detect the wafer surface temperature and the corresponding process to be executed; based on the wafer surface temperature and the corresponding process to be executed, it controls the moving component to move the wafer to a preset position and generates a corresponding temperature control command; after the wafer reaches the preset position, it controls the temperature control component to execute the temperature control command.

[0011] Furthermore, the cooling zone assembly includes: a cooler and / or a cold trap;

[0012] The heating zone assembly includes a heater and / or a heat sink;

[0013] The heater and the cooler are fixed at the bottom of the transfer chamber.

[0014] Furthermore, in the transfer chamber, the working area of ​​the heating zone assembly is a heating zone, and the working area of ​​the cooling zone assembly is a cooling zone;

[0015] The cooling zone and the heating zone are respectively located on both sides of the bottom of the transfer chamber.

[0016] Furthermore, one end of the movable component is connected to the heating zone, and the other end of the movable component is connected to the cooling zone.

[0017] Furthermore, the heat trap and the cold trap are respectively disposed on both sides of the bottom of the transfer chamber.

[0018] Furthermore, the moving component includes: a support frame, a moving track, and a motor;

[0019] The wafer is placed on the support, and the motor controls the support to move on the moving track to move the wafer to a preset position.

[0020] Furthermore, the control component includes: a processor and a sensor;

[0021] The sensor is installed in the transfer chamber and is used to collect the wafer temperature and the identifier of the process to be processed; the wafer temperature and the identifier of the process to be processed are sent to the processor;

[0022] The processor is used to determine the wafer temperature in the process to be processed based on the identifier of the process to be processed; and to determine the corresponding temperature control command based on the wafer temperature in the process to be processed and the wafer temperature.

[0023] Secondly, embodiments of the present invention provide a temperature control method for a transfer chamber, comprising:

[0024] Collect wafer temperature and information about the process to be processed;

[0025] A temperature control command is generated based on the wafer temperature and the identifier of the process to be processed;

[0026] After the wafer reaches the preset position, the temperature control command is executed, and the cooling zone component or heating zone component of the temperature control component at the bottom of the transfer chamber works to cool or heat the wafer, thereby achieving temperature control of the wafer in the transfer chamber.

[0027] Further, generating a temperature control command based on the wafer temperature and the identifier of the process to be processed includes:

[0028] Based on the identifier of the process to be processed, determine the wafer temperature in the process to be processed;

[0029] Based on the wafer temperature in the process to be processed and the wafer temperature, the corresponding temperature control command is determined.

[0030] Furthermore, the execution of the temperature control command includes:

[0031] The wafer is transferred to the working area of ​​the cooling zone assembly or the heating zone assembly, and it is determined whether the heat trap and / or cold trap are turned on.

[0032] Furthermore, at least one of the heaters is provided in the heating zone, and at least one of the coolers is provided in the cooling zone.

[0033] Furthermore, the heat trap is disposed in the cooling zone, and the cold trap is disposed in the heating zone.

[0034] Furthermore, the heating zone is provided with a first moving device, which is used to raise and lower the heater.

[0035] Furthermore, one end of the first mobile device is connected to the heater, and the other end is connected to the bracket via a pulley.

[0036] Furthermore, the cooling zone is provided with a second moving device, which is used to raise and lower the cooler.

[0037] Furthermore, one end of the second mobile device is connected to the cooler, and the other end is connected to the bracket via a pulley.

[0038] The technical solution of the present invention has the following beneficial effects:

[0039] This invention forms a heating zone and a cooling zone at the bottom of the transfer chamber by setting up a heater and a cooler, and combines a cold trap and a heat trap to control the temperature of the wafer surface from multiple dimensions, so that the temperature of the wafer surface can meet the requirements of multiple processes, thereby improving the overall efficiency of the process.

[0040] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the written description and the accompanying drawings. Attached Figure Description

[0041] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Throughout the drawings, the same reference numerals denote the same parts.

[0042] Figure 1 A schematic diagram of the structure of a temperature control device for a transfer chamber provided by the present invention;

[0043] Figure 2 This is a schematic diagram of the structure of the moving track provided in an embodiment of the present invention;

[0044] Figure 3 This is a schematic diagram of another temperature control device for a transfer chamber provided in an embodiment of the present invention.

[0045] Reference numerals: 1-Moving component; 11-Support; 12-Moving track; 13-Motor; 2-Temperature control component; 21-Heating zone; 211-Heater; 22-Cooling zone; 221-Cooler; 23-Cold trap; 24-Heat trap; 3-Control component; 4-Wafer; 5-Transfer chamber; 51-Bottom of transfer chamber. Detailed Implementation

[0046] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form part of this application and are used together with the embodiments of the present invention to illustrate the principles of the present invention, but are not intended to limit the scope of the present invention.

[0047] This invention provides a temperature control device for a transfer chamber, applied to transfer chamber 5, such as... Figure 1-3 As shown, it includes: a moving component 1, a temperature control component 2, and a control component 3.

[0048] The moving component 1 includes: a support 11, a moving track 12, and a motor 13.

[0049] The temperature control component 2 includes: a heater 211, a cooler 221, a cold trap 23, and a heat trap 24.

[0050] Multiple heaters 211 constitute a heating zone 21, and multiple coolers 221 constitute a cooling zone 22. The heating zone 21 and cooling zone 22 are located on opposite sides of the bottom 51 of the transfer chamber to distinguish between the heating and cooling processes. During heating, the control component 3 uses a motor 13 to transport the wafer 4 placed on the support 11 along the moving track 12 to the heating zone 21, and then controls the heaters 211 to heat the wafer in the heating zone 21. During cooling, the control component 3 uses a motor 13 to transport the wafer 4 placed on the support 11 along the moving track 12 to the cooling zone 22, and then controls the coolers 221 to heat the wafer entering the cooling zone 22. It should be noted that multiple heaters 211 can collectively constitute a single heating zone 21. Alternatively, each heater 211 can constitute a separate heating zone, with each heating zone heating only half of the wafer during heating. Thus, when the number of heaters 211 is an even number greater than 4, the transfer chamber 5 can heat multiple wafers simultaneously. The same applies to the cooling zone and cooler 221.

[0051] To further separate the heating and cooling processes, in this embodiment of the invention, lifting devices are provided in the cooling zone 22 and the heating zone 21. During heating or cooling, the heater 211 or the cooler 221 is raised and brought into contact with the bottom surface of the transfer chamber, while the switch of the heater 211 or the cooler 221 is turned on. In this way, it can be ensured that the heating and cooling processes are completely separated.

[0052] In this embodiment of the invention, etching is typically performed under vacuum. Therefore, a cold trap 23 is provided to prevent external water vapor or oxygen from entering the transfer chamber 5, thus preventing wafer contamination. Since both heating and cooling processes occur within the same transfer chamber, heating the wafer before etching and cooling it afterward would affect the subsequent cooling effect. Therefore, a heat trap 24 is also provided to facilitate rapid heat dissipation from the transfer chamber after wafer heating, allowing the temperature within the transfer chamber to approach room temperature, thereby reducing the impact of wafer heating on the cooling effect. It should be noted that if other cooling methods are available, such as liquid nitrogen cooling or introducing cold gas into the transfer chamber, the cold trap 23 can replace the cooler 221, and the heat trap 24 can replace the heater 211. In this case, the cold trap 23 is only used for cooling, and the heat trap 24 is only used for heating.

[0053] The moving component 1 can take various forms. For example, the two ends of the moving track 12 can respectively enter the heating zone 21 and the cooling zone 22. In this case, the support 11 is an annular groove, which allows the wafer to contact the bottom 51 of the transfer chamber and prevents it from shifting during movement. Alternatively, pulleys can be used to connect the wafer 4 to the lifting devices of the cooling zone 22 and the heating zone 21. Thus, when the cooler 221 is lifted to the bottom 51 of the transfer chamber, the lifting device of the cooling zone 22 will pull the wafer 4 to the cooling zone via pulleys. Similarly, when the heater 211 is lifted to the bottom 51 of the transfer chamber, the lifting device of the heating zone 21 will pull the wafer 4 to the heating zone via pulleys.

[0054] Control component 3 includes a processor and sensors. The processor is located in a terminal device such as a server or mobile phone. The sensors are located in the transfer chamber 5 and are used to collect data on the temperature inside the transfer chamber, the wafer surface temperature, the heating time, the cooling time, and the current process indicator. Based on the above data, the processor determines whether the wafer enters the heating zone or the cooling zone, and determines one or more of the heating time, cooling time, and final wafer surface temperature, and sends corresponding temperature control commands to the moving component 1 and the temperature control component 2 according to these parameters.

[0055] To illustrate that the structure of the transfer chamber in the above embodiments can be realized, the following embodiments are provided as specific examples.

[0056] Example 1

[0057] The bottom 51 of the transfer chamber is equipped with two heaters 211 and two coolers 221. Each heater 211 corresponds to a heating zone 21, and each cooler 221 corresponds to a cooling zone 22. The moving track 12 allows the wafer 4 to move to the middle of the two heating zones 21, thereby heating the entire wafer 4. Similarly, the moving track 12 allows the wafer 4 to move to the middle of the two cooling zones 22, thereby heating the entire wafer 4. The moving track 12 can only extend in one direction and contract in the opposite direction. The two heating zones 21 and the two cooling zones 22 are respectively located in the direction of extension and the direction of contraction.

[0058] The bottom 51 of the transfer chamber is also provided with a cold trap 23 and a hot trap 24, which are respectively located on both sides of the bottom 51 of the transfer chamber.

[0059] Example 2

[0060] The bottom 51 of the transfer chamber is equipped with two heaters 211 and two coolers 221. Each heater 211 corresponds to a heating zone 21, and each cooler 221 corresponds to a cooling zone 22. A moving track 12 allows the wafer 4 to move to the middle of the two heating zones 21, thereby heating the entire wafer 4. Similarly, the moving track 12 allows the wafer 4 to move to the middle of the two cooling zones 22, thereby heating the entire wafer 4. The moving track 12 can only extend in one direction and contract in the opposite direction. The two heating zones 21 and the two cooling zones 22 are respectively located in the direction of extension and the direction of contraction. The bottom 51 of the transfer chamber also has a cold trap 23 and a hot trap 24, which are respectively located on both sides of the bottom 51 of the transfer chamber.

[0061] In addition, lifting devices are provided in the cooling zone 22 and the heating zone 21. During heating, the heater 211 rises via the lifting devices until it contacts the bottom surface of the conveying chamber. When heating stops, the heater 211 descends via the lifting devices, separating from the bottom surface of the conveying chamber. During cooling, the cooler 221 rises via the lifting devices until it contacts the bottom surface of the conveying chamber. When heating stops, the cooler 221 descends via the lifting devices, separating from the bottom surface of the conveying chamber.

[0062] Example 3

[0063] The bottom 51 of the transfer chamber is equipped with two heaters 211 and two coolers 221. Each heater 211 corresponds to a heating zone 21, and each cooler 221 corresponds to a cooling zone 22. One end of the moving track 12 extends into the middle of the two heating zones 21, allowing the wafer 4 to move to the middle of the two heating zones, thus heating the entire wafer 4. The other end of the moving track 12 extends into the middle of the two cooling zones, allowing the wafer 4 to move to the middle of the two cooling zones, thus heating the entire wafer 4. The bottom 51 of the transfer chamber is also equipped with a cold trap 23 and a hot trap 24, which are respectively located on both sides of the bottom 51 of the transfer chamber.

[0064] In addition, lifting devices are provided in the cooling zone 22 and the heating zone 21. During heating, the heater 211 rises via the lifting devices until it contacts the bottom surface of the conveying chamber. When heating stops, the heater 211 descends via the lifting devices, separating from the bottom surface of the conveying chamber. During cooling, the cooler 221 rises via the lifting devices until it contacts the bottom surface of the conveying chamber. When heating stops, the cooler 221 descends via the lifting devices, separating from the bottom surface of the conveying chamber.

[0065] Example 4

[0066] The bottom 51 of the transfer chamber is equipped with two heat traps 24 and two cold traps 23. Each heat trap 24 corresponds to a heating zone 21, and each cold trap 23 corresponds to a cooling zone 22. One end of the moving track 12 extends into the middle of the two heating zones 21, allowing the wafer 4 to move to the middle of the two heating zones 21, thereby heating the entire wafer 4. The other end of the moving track 12 extends into the middle of the two cooling zones, allowing the wafer 4 to move to the middle of the two cooling zones 22, thereby heating the entire wafer 4.

[0067] In addition, lifting devices are provided in the cooling zone 22 and the heating zone 21. During heating, the heat sink 24 rises via the lifting devices until it contacts the bottom surface of the transfer chamber. When heating stops, the heat sink 24 descends via the lifting devices, separating from the bottom surface of the transfer chamber. During cooling, the cold sink 23 rises via the lifting devices until it contacts the bottom surface of the transfer chamber. When heating stops, the cold sink 23 descends via the lifting devices, separating from the bottom surface of the transfer chamber.

[0068] Example 5

[0069] The bottom 51 of the transfer chamber is equipped with two heat traps 24 and two cold traps 23. Each heat trap 24 corresponds to a heating zone 21, and each cold trap 23 corresponds to a cooling zone 22. One end of the moving track 12 extends into the middle of the two heating zones 21, allowing the wafer 4 to move to the middle of the two heating zones 21, thereby heating the entire wafer 4. The other end of the moving track 12 extends into the middle of the two cooling zones, allowing the wafer 4 to move to the middle of the two cooling zones 22, thereby heating the entire wafer 4.

[0070] In addition, lifting devices are provided in the cooling zone 22 and the heating zone 21. During heating, the heat sink 24 rises via the lifting devices until it contacts the bottom surface of the transfer chamber. When heating stops, the heat sink 24 descends via the lifting devices, separating from the bottom surface of the transfer chamber. During cooling, the cold sink 23 rises via the lifting devices until it contacts the bottom surface of the transfer chamber. When heating stops, the cold sink 23 descends via the lifting devices, separating from the bottom surface of the transfer chamber.

[0071] The lifting device of the heating zone 21 is connected at one end to the heat sink 24 and at the other end to the support 11 of the wafer 4 via a pulley. As the heat sink 24 rises, the wafer 4 is pulled to the middle of the two heating zones 21. The lifting device of the cooling zone 22 is connected at one end to the cold sink 23 and at the other end to the support 11 of the wafer 4 via a pulley. As the cold sink 23 rises, the wafer 4 is pulled to the middle of the two cooling zones 22.

[0072] Example 6

[0073] The bottom 51 of the transfer chamber is equipped with 2n heat traps 24 and 2n cold traps 23. Each heat trap 24 corresponds to a heating zone 21, and each cold trap 23 corresponds to a cooling zone 22. In this way, the temperature of n wafers can be controlled simultaneously.

[0074] There are n moving tracks 12 (n is a positive integer greater than 1), each moving track 12 is used to move one wafer. One end of each moving track 12 extends into the middle of two corresponding heating zones 21, so that the corresponding wafer 4 can be moved to the middle of the two heating zones 21, and thus the two heating zones can heat the entire wafer 4. One end of each moving track 12 extends into the middle of two corresponding cooling zones, so that the corresponding wafer 4 can be moved to the middle of two cooling zones 22, and thus the cooling zones can heat the entire wafer 4.

[0075] In addition, lifting devices are provided in the cooling zone 22 and the heating zone 21. During heating, the heat sink 24 rises via the lifting devices until it contacts the bottom surface of the transfer chamber. When heating stops, the heat sink 24 descends via the lifting devices, separating from the bottom surface of the transfer chamber. During cooling, the cold sink 23 rises via the lifting devices until it contacts the bottom surface of the transfer chamber. When heating stops, the cold sink 23 descends via the lifting devices, separating from the bottom surface of the transfer chamber.

[0076] The lifting device of the heating zone 21 is connected at one end to the heat sink 24 and at the other end to the support 11 of the corresponding wafer 4 via a pulley. As the heat sink 24 rises, the corresponding wafer 4 is pulled to the middle of the two heating zones 21. The lifting device of the cooling zone 22 is connected at one end to the cold sink 23 and at the other end to the support 11 of the corresponding wafer 4 via a pulley. As the cold sink 23 rises, the corresponding wafer 4 is pulled to the middle of the two cooling zones 22.

[0077] It should be noted that the specific embodiments of the present invention are not limited to the above six embodiments, and may also be combinations of the six embodiments. The above six embodiments only address the case where one heat sink 24 or heater 211 corresponds to one heating zone, and one cold sink 23 or one cooler 221 corresponds to one cooling zone. However, the above six embodiments are also applicable to the case where multiple heat sinks 24 or heaters 211 correspond to one heating zone, and multiple cold sinks 23 or one cooler 221 correspond to one cooling zone, and their specific structures will not be described in detail.

[0078] This invention provides a method for temperature control of a transfer chamber, comprising:

[0079] Step 1: Collect the wafer temperature and the identifier of the process to be processed.

[0080] Step 2: Generate temperature control instructions based on the wafer temperature and the identifier of the process to be processed.

[0081] In this embodiment of the invention, the wafer temperature in the process to be processed is determined based on the identifier of the process to be processed. Based on the wafer temperature in the process to be processed and the actual wafer temperature, a corresponding temperature control command is determined.

[0082] Step 3: Control the temperature of the wafer in the transfer chamber using temperature control commands.

[0083] In this embodiment of the invention, after the wafer reaches a preset position, the cooling zone component or heating zone component of the temperature control assembly at the bottom of the transfer chamber executes a temperature control command to cool or heat the wafer, thereby achieving temperature control of the wafer in the transfer chamber. When the transfer chamber includes a heating zone, a cooling zone, a heat trap, and a cold trap, the cold trap 23 is used to isolate external water vapor or oxygen from entering the transfer chamber, preventing wafer contamination. The heat trap 24 is used to rapidly dissipate heat from the transfer chamber after heating the wafer, allowing the temperature inside the transfer chamber to approach room temperature, thereby reducing the impact of heating the wafer on the cooling effect. At this time, in addition to executing heating or cooling operations, executing the temperature control command also includes transferring the wafer to the heating zone or cooling zone through the temperature control command and determining whether the heat trap and / or cold trap are turned on.

[0084] The temperature control method for a transfer chamber provided in this embodiment of the invention can control the temperature of a single wafer or multiple wafers simultaneously.

[0085] Those skilled in the art will understand that all or part of the methods in the above embodiments can be implemented by a computer program instructing related hardware, and the program can be stored in a computer-readable storage medium. The computer-readable storage medium may be a disk, optical disk, read-only memory, or random access memory, etc.

[0086] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A temperature control device for a transfer chamber, characterized by, include: Moving components, control components, and temperature control components; The moving component is disposed in the transfer chamber and is used to carry the wafer; The temperature control assembly is located at the bottom of the transfer chamber and includes a cooling zone assembly and a heating zone assembly. The cooling zone assembly includes a cooler and a cold trap, the cold trap being used to prevent external water vapor or oxygen from entering the transfer chamber. The heating zone assembly includes a heater and a heat trap, the heat trap being used to rapidly dissipate heat from the transfer chamber after heating the wafer. In the transfer chamber, the working area of ​​the heating zone assembly is the heating zone, and the working area of ​​the cooling zone assembly is the cooling zone. A lifting device is provided in the cooling zone and the heating zone. During heating or cooling, the heater or cooler is controlled to rise and contact the bottom surface of the transfer chamber, and the switch of the heater or cooler is turned on simultaneously. The control component is used to detect the wafer surface temperature and the corresponding process to be executed; based on the wafer surface temperature and the corresponding process to be executed, it controls the moving component to move the wafer to a preset position and generates a corresponding temperature control command; after the wafer reaches the preset position, it controls the temperature control component to execute the temperature control command.

2. The apparatus according to claim 1, characterized in that, The cooling zone and the heating zone are respectively located on both sides of the bottom of the transfer chamber.

3. The apparatus according to claim 2, characterized in that, One end of the moving component is connected to the heating zone, and the other end of the moving component is connected to the cooling zone.

4. The apparatus according to claim 1, characterized in that, The heat trap and the cold trap are respectively located on both sides of the bottom of the transfer chamber.

5. The apparatus according to claim 1, characterized in that, The moving component includes: a support frame, a moving track, and a motor; The wafer is placed on the support, and the motor controls the support to move on the moving track to move the wafer to a preset position.

6. The apparatus according to claim 1, characterized in that, The control components include: a processor and a sensor; The sensor is installed in the transfer chamber and is used to collect the wafer temperature and the identifier of the process to be processed; the wafer temperature and the identifier of the process to be processed are sent to the processor; The processor is used to determine the wafer temperature in the process to be processed based on the identifier of the process to be processed; and to generate corresponding temperature control commands based on the wafer temperature in the process to be processed and the wafer temperature.

7. A temperature control method for a transfer chamber, characterized by, include: Collect wafer temperature and information about the process to be processed; A temperature control command is generated based on the wafer temperature and the identifier of the process to be processed; After the wafer reaches the preset position, a temperature control command is executed, and the cooling zone component or heating zone component of the temperature control assembly at the bottom of the transfer chamber operates to cool or heat the wafer, thereby achieving temperature control of the wafer in the transfer chamber. The execution of the temperature control command includes: transferring the wafer to the working area of ​​the cooling zone component or heating zone component, and determining whether the heat trap and / or cold trap are activated. The working area of ​​the heating zone component is a heating zone, and the working area of ​​the cooling zone component is a cooling zone. At least one heater is installed in the heating zone, and at least one cooler is installed in the cooling zone. The heat trap is located in the cooling zone, and the cold trap is located in the heating zone. The cold trap is used to prevent external water vapor or oxygen from entering the transfer chamber, and the heat trap is used to rapidly dissipate heat from the transfer chamber after heating the wafer. The heating zone is provided with a first moving device, which is used to raise and lower the heater, controlling the heater to rise and contact the bottom surface of the conveying chamber, or to fall and separate from the bottom surface of the conveying chamber; the cooling zone is provided with a second moving device, which is used to raise and lower the cooler, controlling the cooler to rise and contact the bottom surface of the conveying chamber, or to fall and separate from the bottom surface of the conveying chamber.

8. The method according to claim 7, characterized in that, The step of generating a temperature control command based on the wafer temperature and the identifier of the process to be processed includes: Based on the identifier of the process to be processed, determine the wafer temperature in the process to be processed; Based on the wafer temperature in the process to be processed and the wafer temperature, the corresponding temperature control command is determined.

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