Semiconductor light emitting device

Abstract

A semiconductor light emitting device (1) is described comprising a matrix of emitters (10) comprising an arrangement of emitter cells (10E) interspersed with non-emitter cells (10e), wherein an emitter cell (10E) comprises a semiconductor emitter (10L) and a non-emitter cell (10e) does not comprise a semiconductor emitter; a number of bond pads (10B) for connecting to a power supply (80); and a plurality of wirebonds (10W), wherein each wirebond (10W) extends from a bond pad (10B) to a semiconductor emitter (10L) of an emitter cell (10E). An imaging arrangement (5) comprising a light source (1L) for illuminating a scene (S) is also described, the light source (1L) comprising a pair of such semiconductor light emitting devices (1). A method of manufacturing such a semiconductor light emitting device is also described.

Description

Technical Field

[0001] The present invention describes a semiconductor light-emitting device; a method for manufacturing such a semiconductor light-emitting device; and an imaging arrangement comprising a pair of such semiconductor light-emitting devices. Background Technology

[0002] To capture images using image sensors with compact imaging arrangements, such as in mobile devices, semiconductor light sources—such as arrays of light-emitting diodes (LEDs) or vertical-cavity surface-emitting lasers (VCSELs)—are typically used to illuminate the scene. Adaptive semiconductor light sources (also known as adaptive irradiance units)—which are individually addressable segmented arrays (each segment may include one or more light-emitting elements)—can be used to ensure optimal exposure over the scene, and thus can result in better images. By illuminating each area of ​​the scene with only the necessary amount, adaptive semiconductor light sources can therefore reduce power consumption, which can be a significant advantage when the imaging system is incorporated into a device such as a smartphone and should not drain the battery.

[0003] Typically, a very compact light source is desired, meaning the segments of the array are close together within the die. While this is feasible for visible-spectrum LED arrays, it can be problematic for infrared LEDs. This is because infrared LEDs are preferably connected to bonding pads on the die via wire bonding. Wire bonding is also problematic in arrays with many infrared LEDs because they are positioned in the optical path and because they require sufficient "headroom"—enough space to ensure they are not damaged. Another issue with large IR-LED arrays is that wire bonding to the center of the array is significantly longer than wire bonding to the outer regions, which can limit the highest achievable switching frequency. As an alternative to using wire bonding, IR LED arrays can be fabricated as flip-chip devices, but this comes at the cost of approximately half the output power due to the lower efficiency of flip-chip IR LEDs. Therefore, the object of this invention is to provide a segmented semiconductor light source that overcomes the aforementioned problems. Summary of the Invention

[0004] The object of the present invention is achieved by the semiconductor light-emitting device of claim 1; by the method of manufacturing the semiconductor light-emitting device of claim 9; and by the imaging arrangement of claim 12.

[0005] According to the present invention, a semiconductor light-emitting device includes an emitter matrix comprising an arrangement of emitter units scattered with non-emitter units, wherein the emitter units include semiconductor emitters and the non-emitter units do not include semiconductor emitters; a plurality of pads for connection to a power supply; and a plurality of lead connections, wherein each lead connection extends from the bonding pad to the semiconductor emitter of the emitter unit.

[0006] Semiconductor light-emitting devices are used in lighting applications, and it can be assumed below that semiconductor emitters are manufactured to achieve 5-100 Mcd / m². 2 Luminous intensity (megacandela per square meter).

[0007] The ratio of transmitter units to non-transmitter units in the transmitter matrix is ​​preferably 1:1 or as close to that ratio as possible.

[0008] Because the emitter matrix (or “emitter array”) is formed as an arrangement of emitter cells with or without vacant cells, the arrangement of wire bonds is advantageously sparse. This means that the wire bonds extending to the center of the emitter matrix can be significantly shorter than the equivalent wire bonds of a prior art emitter matrix consisting only of emitter cells. Therefore, the semiconductor light-emitting device of the present invention requires less “top space” or gap. Another advantage of the device of the present invention is that, because the emitter cells are interspersed with non-emitter cells, the number of emitters traversed by the wire bonds is less than that of a prior art emitter array filled with emitters. This means that a much lower share of the total emitted light is blocked by the wire bonds, making the emitted light to net light output ratio of the device of the present invention advantageous compared to prior art emitter arrays. Another advantage of the device of the present invention is the reduction in the number of wire bond shadows projected onto the scene. A further advantage of the device of the present invention is that the larger “spread” of the emitters (emitter cells interspersed with vacant cells) leads to improved thermal performance. This is because the heat generated by any activated emitter unit can dissipate more quickly, as heat can also be dissipated through adjacent "empty" or non-emitter units.

[0009] According to the present invention, a method for manufacturing such a semiconductor light-emitting device includes at least the step of manufacturing an emitter matrix comprising an arrangement of emitter cells scattered with non-emitter cells, thereby forming a semiconductor emitter in each emitter cell and not forming semiconductor emitters in the non-emitter cells. The method further includes the step of forming a plurality of bonding pads at one or more edges of the semiconductor light-emitting device and connecting wire bonds between each semiconductor emitter and the bonding pads.

[0010] The method of the present invention can result in relatively economical semiconductor light-emitting devices because it is easier to connect wire bonding to the semiconductor emitter due to the non-emitter units scattered throughout the emitter matrix.

[0011] According to the invention, the imaging arrangement includes a light source for illuminating a scene, the light source comprising a pair of semiconductor light-emitting devices, wherein an emitter array of a first semiconductor light-emitting device is arranged to illuminate substantially one half of the scene, and an emitter array of a second semiconductor light-emitting device is arranged to illuminate substantially the other half of the scene. The imaging arrangement also includes an image sensor arrangement for capturing images of the scene illuminated by the light source.

[0012] One advantage of the imaging arrangement of the present invention is that it requires less gap or top space compared to prior art light sources comprising a single emitter array with a comparable number of emitters. This is because the lead bonding of the emitter array can be formed in a more compact manner. As indicated above, the emitted light quantity of the device of the present invention is advantageous compared to equivalent prior art emitter arrays (arrays with the same number of emitters) because any lead bonding in the device of the present invention will pass through relatively fewer emitters. The imaging arrangement of the present invention also has the advantage of reduced power consumption compared to imaging arrangements that do not utilize segmented light sources. Due to the improved thermal behavior of the sparsely filled emitter array, the thermal requirements of the imaging arrangement of the present invention can also be less stringent than those of comparable prior art imaging arrangements.

[0013] The imaging arrangement of the present invention can be used in any application that can benefit from the use of wire-bonded dies in adaptive light sources, such as time-of-flight systems, robotic systems, unmanned aerial vehicles, mobile phones, or security cameras.

[0014] The dependent claims and the following description disclose particularly advantageous embodiments and features of the invention. Features of the embodiments can be appropriately combined. Features described in the context of one class of claims can also be applied to another class of claims.

[0015] In a particularly preferred embodiment of the invention, the emitter matrix comprises at least nine cells in a 3×3 array, for example, having a total of five emitter cells (one emitter cell in the center of the array and one emitter cell at each corner). In any embodiment of the semiconductor light-emitting device of the invention, the emitter cells of the emitter matrix may be smaller than or conversely smaller than the non-emitter cells; the emitter cells may be substantially square or rectangular; and the spacing in the X direction may be the same as the spacing in the Y direction, or the spacing in the X direction may be different from the spacing in the Y direction. In the following, but without limiting the invention in any way, it may be assumed that the emitter cells and non-emitter cells are substantially the same size, i.e., each occupies the same area of ​​the semiconductor device, and the spacing in the X direction is the same as the spacing in the Y direction. Wire bonds may have a diameter of approximately 30 μm, and the bonding pads will be approximately three to five times larger. Since the cells must provide at least sufficient space for the wire bonds, the area of ​​the cells can be 5000 μm. 2 The order of magnitude.

[0016] As indicated above, infrared semiconductor devices (e.g., IR-LEDs) can be used in a variety of irradiation applications (e.g., depth map generators, time-of-flight systems, etc.) and are generally wire-connected to improve current efficiency. Therefore, without limiting the invention in any way, it may be assumed below that the emitter is an infrared light-emitting diode (IR-LED).

[0017] The emitter matrix can be formed in any suitable distribution with emitter units and scattered non-emitter units. For example, emitter units can be grouped in a 2×2 arrangement, separated by "empty spaces," i.e., by non-emitter units. One embodiment of the light source of the present invention can have another emitter matrix implemented as an inversion in order to be able to fully illuminate the scene.

[0018] In a particularly preferred embodiment of the invention, the transmitter matrix comprises a simple alternating arrangement of transmitter units and non-transmitter units. For example, the units may be arranged in a checkerboard pattern or a striped pattern. Preferably, the checkerboard pattern comprises an alternating arrangement of single transmitter units and single non-transmitter units. Similarly, the striped pattern preferably comprises an alternating arrangement of single rows (or columns) of transmitter units and single rows (or columns) of non-transmitter units.

[0019] An exemplary embodiment is given by a square array—that is, an array or matrix in which the number of rows is the same as the number of columns. Two such square arrays can be prepared to complement each other. For example, two 3×3 checkerboard pattern arrays can be arranged side by side. The first 3×3 array includes five emitter units, one in the center and one at each of the four corners. The complementary 3×3 array includes five non-emitter units, one in the center and one at each of the four corners. In this embodiment, the light source of the present invention includes a total of nine emitters.

[0020] In another exemplary embodiment, two 5×5 striped pattern arrays can be arranged side by side. The first 5×5 array includes three columns of emitter units and two columns of non-emitter units. In this case, the complementary 5×5 array includes three columns of non-emitter units and two columns of emitter units. In this embodiment, the light source of the present invention includes a total of 25 emitters.

[0021] In a preferred embodiment of the invention, the emitter matrix may comprise a semiconductor emitter array, wherein only a subset will generate emitter cells. An “emitter cell” is effectively formed by connecting its semiconductor emitters as diodes into the circuit—that is, by connecting wire bonding between the cell and the bonding pad. This step is necessary to connect the semiconductor emitters as part of the circuit. Thus, non-emitter cells can indeed comprise structures that include semiconductor emitters. However, such a structure cannot be used as a semiconductor emitter without any electrical connection to the bonding pad. The advantage of this direct approach is that existing masks and layer growth sequences can be applied during wafer fabrication, and the cost of avoiding the need for dedicated masks outweighs the disadvantage of preparing areas that will not be used.

[0022] Non-emitter cells can house switching elements such as transistors. In one approach, switching elements (e.g., GaN / GaAs transistors) and emitters can be formed simultaneously by using appropriate masking and layer deposition sequences and / or epitaxial growth sequences.

[0023] In a particularly preferred embodiment of the invention, discrete switching elements and transmitter dies are mounted onto a substrate or carrier, such as a PCB or interposer. Each transmitter die is mounted onto a transmitter unit of a transmitter matrix, and leads are connected to switching elements in adjacent non-transmitter units. Additional circuit connections can be provided within the body of the PCB using a suitable multilayer approach.

[0024] Preferably, the semiconductor light-emitting device also includes an interface for connection to a driver, which is implemented to individually control the emitters, for example, according to instantaneous scene illumination requirements. Each emitter can be switched individually, and the intensity of each emitter can be adjusted according to instantaneous requirements. There are various ways to manage segmented irradiation units, and those skilled in the art will be familiar with the driver requirements, which need not be discussed in detail here.

[0025] In a particularly preferred embodiment of the invention, the imaging arrangement includes beam-shaping optics for shaping the light emitted by the pair of semiconductor light-emitting devices. The beam-shaping optics can disperse the light from the emitter array to cover the entire scene. The resulting illumination pattern can be a copy of the emitter array pattern, i.e., where scene areas are illuminated by emitter units scattered with non-illuminated scene areas (due to empty cells). Alternatively, the beam-shaping optics can shape the light from the emitter units to illuminate half the scene (when using two emitter arrays). Similarly, the beam-shaping optics can shape the light from the emitter units of a single emitter array to illuminate the entire scene.

[0026] As described above, each semiconductor light-emitting device of the light source can effectively illuminate half of the scene; for example, one emitter matrix can illuminate the left side of the scene, while another emitter matrix can illuminate the right side. However, other arrangements are possible. For example, each emitter matrix can be used to project light across the entire field of view, thereby giving the lighting pattern the same checkerboard characteristics as the emitter matrix. Therefore, in such a preferred embodiment, the semiconductor light-emitting devices are preferably complementary to each other, i.e., the emitter matrix of the first semiconductor light-emitting device is complementary to the emitter matrix of the second semiconductor light-emitting device. For example, the emitter matrix of the first semiconductor light-emitting device may be able to illuminate the upper left and lower right corners of the scene, but not the upper right and lower left corners. The complementary emitter matrix of the second semiconductor light-emitting device is then able to illuminate the upper right and lower left corners of the scene, but not the upper left and lower right corners. This also applies to all other "units" in the lighting pattern projected onto the scene.

[0027] The imaging setup is preferably sized for use in compact mobile applications, such as compact cameras or smartphones, or in any other space-constrained and / or battery-powered applications, such as robots, drones, car dashboards, etc.

[0028] Other objects and features of the invention will become clear from the following detailed description taken in conjunction with the accompanying drawings. However, it should be understood that the drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Attached Figure Description

[0029] Figure 1 An embodiment of the semiconductor light-emitting device of the present invention is shown;

[0030] Figure 2 Given Figure 1 Side view of the device;

[0031] Figure 3 An embodiment of a prior art semiconductor light-emitting device is shown;

[0032] Figure 4 Given Figure 3 A side view of the device;

[0033] Figure 5 and Figure 6 An embodiment of the imaging arrangement of the present invention is shown;

[0034] Figure 7 Further embodiments of the semiconductor light-emitting device of the present invention are shown;

[0035] Figure 8 A simplified circuit diagram of the transmitter circuit is shown;

[0036] Figure 9 Implementation shown Figure 8 Another embodiment of the semiconductor light-emitting device of the present invention.

[0037] In the accompanying figures, similar numbers always refer to similar objects. Objects in the figures are not necessarily drawn to scale. Detailed Implementation

[0038] Figure 1An embodiment of the semiconductor light-emitting device 1 of the present invention is shown. In this exemplary embodiment, the emitter matrix 10 comprises a 5×5 square array, wherein emitter units 10E alternate with non-emitter units 10E. Each emitter unit 10E houses an IR-LED 10L. Each non-emitter unit 10e is "empty" in the sense that it does not house any circuit components. In this exemplary embodiment, the emitter matrix 10 is a suitable carrier, such as a PCB with copper tracks, an interposer, etc. To fill the emitter matrix, emitter dies 10L are mounted onto the carrier. Emitters such as IR-LEDs may have one contact (e.g., an anode contact) on their underside and another contact (e.g., a cathode contact) on their topside. The underside contact can be electrically connected to the circuit by means of solder bonding, while the topside contact can be electrically connected to the circuit by means of wire bonding. Here, one contact of each emitter die 10L is wire bonded to a bonding pad at the edge of the emitter matrix 10, and the other contact is soldered to a copper track, for example by means of a via extending into a multilayer PCB. This diagram illustrates a plurality of bonding pads 10B for connection to a power source and lead connections 10W extending from the bonding pads to the IR-LED 10L mounted on the transmitter unit 10E. In this exemplary embodiment, the transmitter array 10 is implemented as an alternating pattern of transmitter units 10E and empty units 10e, i.e., each transmitter unit 10E (and therefore each transmitter 10L) is flanked along its side to an empty unit 10e, and vice versa.

[0039] In this 5×5 array, the center cell is an empty cell 10e. Therefore, the longest lead joint does not need to extend to the center cell. Figure 2 As shown, it gives the passage through Figure 1 The cross-section of device 1 is A-A', thus requiring a favorablely small top space or gap C1. Gap as low as 30 μm can be achieved using advantageous short connections and lead joints arranged close to the surface. This is approximately 20% less top space than equivalent prior art transmitter arrays. The total top space requirement of device 1 is less than that of a comparable 5×5 array in which all cells are implemented as transmitter cells 10E. This is in... Figure 3 and Figure 4 As shown in the figure, Figure 3 and Figure 4 With a plan view ( Figure 3 ) and section B-B' ( Figure 4 The image shows a prior art semiconductor light-emitting device 2. The reduction in top space can be a significant advantage, as top space is a critical factor in many compact applications.

[0040] Figure 3The transmitter array 3 requires wire bonding to all transmitters 30L. Due to the small cell size, some wire bonding must be arced over other wire bonding, and relatively long wire bonding is required to reach the center cell. Figure 4 As shown, it gives Figure 3 The side view of device 3 shows that the required top space or gap C3 is quite large, making the total space requirement of prior art device 3 greater than that of the device 3. Figure 1 The present invention relates to device 1. A more significant drawback of this prior art device is the amount of light blocked by the wire joint, which must span a greater number of emitters compared to the device of the present invention. When used in lighting scenarios, this prior art device will inevitably project many wire joint shadows onto the scene.

[0041] A single such emitter array 1 can be used as a light source or irradiation unit to illuminate the entire scene (so that the image can be captured by an imaging sensor). However, the inventors have realized that, for several reasons, it is advantageous to divide the light source into two smaller devices and allow each smaller irradiation unit to illuminate half of the scene. Figure 5 An embodiment of the imaging arrangement 5 of the present invention is shown. Here, the light source 1L comprises two semiconductor light-emitting devices arranged side by side. The emitter array 10 of each semiconductor light-emitting device is used to illuminate half of the scene S. In this exemplary embodiment, each emitter array 10 is as described above. Figure 1 The diagram describes a 3×3 array with alternating arrangements of emitters 10L and empty cells 10e. A beam-shaping optics 50 is arranged in the optical path of each emitter array 10, such that each emitter array 10 can "cover" half of its complete scene. Here, the beam-shaping optics 50 form individual beams from the alternating emitters 10L, such that when all five emitters are activated, the resulting beams can completely illuminate half of the scene.

[0042] Figure 6 Another embodiment of the imaging arrangement 5 of the present invention is shown. Similarly, the light source 1L comprises two semiconductor light-emitting devices arranged side-by-side, and the emitter array 10 of the semiconductor light-emitting devices is used to illuminate half of the scene S. Here, each emitter array 10 is also a 3×3 array with an alternating arrangement of emitters 10L and empty cells 10e, as described above. Figure 1As described in [the text]. In this embodiment, each emitter array 10 can "cover" the entire scene S, thereby projecting an alternating pattern of illuminated areas (illuminated by its emitter 10L) and unilluminated areas (due to its empty cells 10e). In this exemplary embodiment, the emitter arrays 10 are complementary to each other, such that scene areas not illuminated by one emitter array are illuminated by the emitters 10L of another emitter array 10. Here, suitable beam-shaping optics 51 are also arranged in the optical path of each emitter array 10 to shape the individual beams from the alternating emitters 10L into beams that are diffused to cover the entire scene S.

[0043] Figure 7 Another embodiment of a semiconductor light-emitting device is shown, and an emitter array 10 is illustrated, in which each emitter is implemented as a discrete IR-LED 10L and each non-emitter unit 10e is used to connect adjacent IR-LEDs 10L into a circuit. For this purpose, the carrier is a multilayer PCB, and each non-emitter unit has a via in a connection layer extending into the interior of the PCB. In this way, each emitter 10L can be connected to a driver using a very short lead connection 10W, which only needs to reach the adjacent empty unit 10e.

[0044] In another embodiment, empty cell 10e can be used to accommodate switching elements, and each transmitter can be electrically connected to an adjacent switching element. A simplified circuit diagram of such a transmitter / switch pair is shown in... Figure 8 The simplified circuit diagram shown illustrates a transmitter 10L, with its anode connected to a driver 80 and its cathode connected to a switching element 10. 开关 The drain. In this exemplary embodiment, the switching element 10 开关 It is an enhancement-mode MOSFET. Figure 9 An embodiment using several such transmitter / switch pairs mounted on a multilayer PCB carrier is shown. Here, the entire circuit comprises multiple such transmitter / switch pairs connected in parallel. The anode of each transmitter 10L is connected to the power supply of the driver 80 via conductive rails embedded in the PCB carrier and solder joints to contacts on the underside of the transmitter 10L. The cathode of each transmitter 10L is connected to the switching element 10 via wire bonding 10W. 开关 Appropriate contacts (located in the adjacent non-emitter unit 10e). Of course, if the emitter 10L is implemented as a flip-chip die, its cathode can be connected to the adjacent switching element 10 via conductive tracks on the PCB. 开关 Switching element 10 开关 Other terminals are connected to the circuit via through-holes in conductive tracks embedded in the PCB carrier. This is achieved by making the switching element 10... 开关The advantage of placing the transmitter 10L very close to the ground to minimize the current loop is that parasitic line impedance is correspondingly reduced. This implementation can be particularly advantageous when the transmitter array 10 has a high switching frequency (e.g., 10 MHz or higher).

[0045] Although the present invention has been disclosed in the form of preferred embodiments and variations thereof, it will be understood that many additional modifications and variations can be made thereto without departing from the scope of the invention. For example, although the focus above has been on the matrix of infrared emitters, it should be understood that other emitters can also be used. For example, the emitters of the emitter matrix can be VCSELs, because such emitters can also benefit from the advantages of the devices of the present invention, namely, tight packaging, the possibility of arranging electronic components very close to the VCSEL, improved thermal performance, etc.

[0046] For clarity, it should be understood that throughout this application, the use of "a" or "an" does not exclude a plurality, and "including" does not exclude other steps or elements.

[0047] Figure label:

[0048] Semiconductor light-emitting device 1

[0049] 1L light source

[0050] Transmitter Matrix 10

[0051] Transmitter Unit 10E

[0052] 10L transmitter

[0053] Non-emitter unit 10e

[0054] 10B bonding pads

[0055] 10W lead wire connection

[0056] Switching element 10 开关

[0057] MOSFET gate control 10 栅极

[0058] Gap C1

[0059] 1L light source

[0060] Beam shaping optics 50, 51

[0061] Scene S

[0062] Existing technology device 3

[0063] Transmitter Matrix 30

[0064] Transmitter Unit 30L

[0065] 30B bonding pad

[0066] 30W lead wire connection

[0067] Gap C3

[0068] Power supply 80.

Claims

1. A semiconductor light-emitting device (1) configured to illuminate a scene (S) for an imaging arrangement (5), and comprising: The transmitter matrix (10) comprises an arrangement of transmitter units (10E) scattered in a regular matrix array, wherein the transmitter units (10E) and non-transmitter units (10e) are of the same size and occupy the same area; and wherein, The transmitter unit (10E) includes a semiconductor transmitter (10L) and the non-transmitter unit (10e) does not include a semiconductor transmitter; Several bonding pads (10B) are formed at one or more edges of the semiconductor light-emitting device (1) for connection to the driver (80). and Multiple lead joints (10W), wherein each lead joint (10W) extends from the bonding pad (10B) to the semiconductor emitter (10L) of the emitter unit (10E).

2. The semiconductor light-emitting device according to claim 1, wherein, The transmitter matrix (10) comprises an alternating arrangement of transmitter units (10E) and non-transmitter units (10e).

3. The semiconductor light-emitting device according to claim 1 or claim 2, wherein, The transmitter unit (10E) and the non-transmitter unit (10e) are arranged in a checkerboard pattern.

4. The semiconductor light-emitting device according to claim 1 or claim 2, wherein, The transmitter unit (10E) and the non-transmitter unit (10e) are arranged in a striped pattern.

5. The semiconductor light-emitting device according to claim 1 or claim 2, wherein, At least one non-transmitter unit (10e) includes a switching element (10 开关 ).

6. The semiconductor light-emitting device according to claim 1 or claim 2, wherein, The transmitter matrix (10) comprises an array of at least nine transmitter units (10E).

7. The semiconductor light-emitting device according to claim 1 or claim 2, wherein, The transmitter (10L) of the transmitter matrix (10) is an infrared light-emitting diode.

8. The semiconductor light-emitting device according to claim 1 or claim 2, wherein, The transmitters (10L) of the transmitter matrix (10) are vertical cavity surface-emitting lasers.

9. A method for manufacturing a semiconductor light-emitting device (1) according to any one of claims 1 to 8, Includes the following steps The emitter matrix (10) is manufactured as an arrangement of emitter cells (10E) with non-emitter cells (10e) scattered in each emitter cell (10E); A plurality of bonding pads (10B) are formed at one or more edges of the semiconductor light-emitting device (1); and Connect wire bonds (10W) between each semiconductor emitter and bonding pad (10B).

10. The method of claim 9, further comprising providing a switching element (10) in the non-transmitter unit (10e). 开关 The steps are as follows.

11. The method according to claim 10, wherein, Before the step of filling the emitter unit (10E) with the semiconductor emitter (10L), the switching element (10) is used. 开关 The step of filling the non-emitter unit (10e).

12. An imaging arrangement (5), comprising: A light source (1L) for illuminating a scene (S), the light source (1L) comprising a pair of semiconductor light-emitting devices (1) according to any one of claims 1 to 8, wherein, The emitter matrix (10) of one semiconductor light-emitting device (1) is arranged to illuminate half of the scene (S), and the emitter matrix (10) of another semiconductor light-emitting device (1) is arranged to illuminate the other half of the scene (S); An image sensor is arranged to capture an image of the scene (S) illuminated by the light source (1L).

13. The imaging arrangement according to claim 12, comprising beam-shaping optics (50, 51) for shaping light emitted by the emitter matrix (10) of the semiconductor light-emitting device (1).

14. The imaging arrangement according to claim 12 or claim 13, wherein, The emitter matrix (10) of one semiconductor light-emitting device (1) generates a first illumination pattern, and the emitter matrix (10) of another semiconductor light-emitting device (1) generates a second illumination pattern, the second illumination pattern being the inversion of the first illumination pattern.

15. The imaging arrangement according to claim 12 or claim 13, wherein, The imaging arrangement is implemented for use in a compact mobile device.

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