Apparatus for processing a substrate and temperature control method

Abstract

The inventive concept provides a temperature control method. A temperature control method for controlling a temperature of a tank storing a process fluid delivered to a chamber includes supplying the process fluid to an interior space of the tank, heating the process fluid in the interior space, and delivering the heated process fluid to the chamber, wherein a temperature of the interior space is controlled based on a measured pressure of the interior space.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to an apparatus for processing a substrate and a temperature control method, and more specifically, to an apparatus for processing a substrate using a high-pressure processing fluid and a temperature control method within a tank storing the processing fluid transferred to the chamber of the substrate processing apparatus. Background Technology

[0002] Various processes, such as photolithography, etching, ashing, ion implantation, and thin-film deposition, are performed to fabricate semiconductor devices. In each process, various processing liquids and gases are used, and particles and process byproducts are generated during the process. Cleaning processes are performed before and after each process to remove these particles and process byproducts from the substrate.

[0003] In traditional cleaning processes, the substrate is treated with chemicals and rinsing solutions before drying. As an example of drying, there is a rotary drying process that involves spinning the substrate at high speed to remove any residual rinsing solution. However, this rotary drying method can damage the patterns formed on the substrate surface.

[0004] Therefore, a supercritical drying process is currently being used whereby an organic solvent, such as isopropanol (IPA), is supplied to the substrate to replace the rinsing solution remaining on the substrate with an organic solvent having low surface tension. Then, a supercritical processing liquid is supplied to the substrate to remove the remaining organic solvent. In this supercritical drying process, a drying gas is supplied to an internally sealed processing chamber, and the drying gas is heated and pressurized. Consequently, both the temperature and pressure of the drying gas rise above a threshold point, and the drying gas undergoes a phase transition to a supercritical state.

[0005] Figure 1 The diagram illustrates a conventional substrate processing apparatus used to perform a supercritical drying process. Figure 2 It is shown Figure 1 The graphs show the pressure and temperature changes within the tank's internal space, as well as the pressure changes within the supercritical chamber's processing space. (Reference) Figure 1 and Figure 2 The conventional substrate processing apparatus 1 for supercritical drying includes a tank 2, a heater 4, a first gas supply pipe 5, a second gas supply pipe 6, a temperature sensor 7, a pressure sensor 8, and a supercritical chamber 9. Furthermore, in... Figure 2 In the graph shown, the X-axis represents time t, and the Y-axis represents the pressure PT inside the tank, the temperature FT inside the tank, and the pressure PC in the supercritical chamber's processing space, respectively.

[0006] The supercritical chamber 9 has a processing space for drying a substrate W, such as a wafer. The tank 2 has an internal space 3. A processing liquid is supplied to the internal space 3 of the tank 2 via a first gas supply pipe 5. The tank 2 can store the processing liquid supplied to the internal space 3. The processing liquid stored in the internal space 3 is heated by a heater 4 and, while heated, is supplied to the processing space of the supercritical chamber 9 via a second gas supply pipe 6. When the heated processing fluid is supplied to the supercritical chamber 9, the pressure of the processing space in the supercritical chamber 9 increases to a preset pressure. Thereafter, the pressure of the processing space is maintained for a predetermined period of time. Afterward, the processing fluid is discharged from the processing space, and the pressure of the processing space in the supercritical chamber 9 decreases.

[0007] Furthermore, the pressure in the internal space 3 of tank 2 should be kept constant when the pressure SP and temperature ST are set. This is to suppress deviations based on the timing of the supply of the processing fluid delivered to the supercritical chamber 9 at the set pressure SP. Additionally, maintaining a relatively constant pressure in the internal space 3 of tank 2 ensures the stability of the substrate processing apparatus 1. Therefore, a pressure sensor 8 for measuring the pressure of the internal space 3 and a temperature sensor 7 for measuring the temperature of the internal space 3 are installed in the internal space 3 of tank 2 to maintain a constant temperature and pressure in the internal space 3.

[0008] For example, such as Figure 2 As shown, when the processing fluid is supplied from tank 2 to supercritical chamber 9 at the first time point t01, the pressure in the internal space 3 of tank 2 decreases. To increase the reduced pressure in the internal space 3, new processing fluid is introduced into the internal space 3 of tank 2 through the first air supply pipe 5, based on the pressure value of the internal space 3 measured by pressure sensor 8. When the new processing fluid flows into the internal space 3, the temperature of the internal space 3 decreases. To increase the reduced temperature of the internal space 3, heater 4 increases the temperature of the internal space 3, based on the temperature value of the internal space 3 measured by temperature sensor 7.

[0009] However, the temperature of the new processed fluid flowing into the internal space 3 of tank 2 is slightly lower. That is, the temperature of region A adjacent to the first air supply pipe 5 and the temperature of region B adjacent to the second air supply pipe 6 in the internal space 3 of tank 2 may differ from each other. In other words, the temperature value of the internal space 3 measured by the temperature sensor 7 can vary depending on the location of the temperature sensor 7 within the internal space 3. In other words, the accuracy of the temperature value measured by the temperature sensor 7 is poor. Furthermore, since the heater 4 heats the internal space 3 based on the temperature value measured by the temperature sensor 7, the reaction speed of the heater 4 is affected by the change in the temperature value measured by the temperature sensor 7. However, as mentioned above, the temperature value measured by the temperature sensor 7 is relatively inaccurate, and the measurement reaction speed of the temperature sensor 7 is also slow, therefore the reaction speed of the heater 4 is also slow.

[0010] Furthermore, at the fourth time point t04, when the supercritical processing of the substrate is completed in the supercritical chamber 9, the processing fluid supplied to the processing space of the supercritical chamber 9 is discharged from the supercritical chamber 9. Therefore, the pressure in the supercritical chamber 9 decreases. Also, from the fourth time point t04, the supply of processing fluid from the internal space 3 of the tank 2 to the processing space of the supercritical chamber 9 is stopped. However, to increase the pressure in the internal space 3, which decreased before the fourth time point t04, processing fluid is continuously supplied to the internal space 3. At the fifth time point t05, the pressure in the internal space 3 reaches the set pressure SP. However, after reaching the set pressure SP, the pressure in the internal space 3 increases to a higher pressure. This is because new processing fluid is introduced into the internal space 3, causing the temperature of the internal space 3 to decrease, and the heater 4 heats the tank 2 to increase the decreased temperature of the internal space 3. Since temperature and pressure are proportional to each other, when the heater 4 heats the tank 2 to increase the temperature of the internal space 3, the pressure in the internal space 3 of the tank 2 becomes higher than the set pressure SP. Therefore, in order to further reduce the pressure in the internal space 3, which has become higher than the set pressure SP, the processing fluid supplied to the internal space 3 is discharged to the outside of the tank 2 through a drain line (not shown). When the processing fluid is discharged to the outside through the drain line, the pressure in the internal space 3 decreases again. In this case, the pressure in the internal space 3 may drop below the set pressure SP. When the pressure in the internal space 3 drops below the set pressure SP, new processing fluid is supplied back to the internal space 3. When new processing fluid is supplied back to the internal space 3, the temperature of the internal space 3 drops again. When the temperature of the internal space 3 drops, the heater 4 reheats the tank 2. That is, in Figure 2 An overshoot phenomenon occurs between the fifth time point t05 and the sixth time point t06. That is, during the process of maintaining the pressure and temperature of the internal space 3 at the set pressure SP and set temperature ST between the fifth time point t05 and the sixth time point t06, there is an unnecessary consumption of processing liquid. Summary of the Invention

[0011] The present invention provides a temperature control method and a substrate processing apparatus for effectively controlling the temperature of a processing fluid.

[0012] The present invention provides a temperature control method and a substrate processing apparatus for minimizing overshoot.

[0013] The present invention provides a temperature control method and a substrate processing apparatus for effectively controlling the temperature and pressure inside a tank.

[0014] The present invention provides a temperature control method and a substrate processing apparatus for precisely controlling the temperature of the internal space of a tank.

[0015] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0016] The present invention provides a method for controlling the temperature inside a tank storing a process fluid transferred to a chamber, the method comprising: supplying the process fluid to an internal space of the tank; heating the process fluid in the internal space; and transferring the heated process fluid to a chamber, wherein the temperature of the internal space is controlled based on a measured pressure of the internal space.

[0017] In one implementation, the temperature of the interior space is controlled so that the pressure in the interior space can reach a predetermined pressure.

[0018] In one implementation, when the pressure in the internal space is lower than a predetermined pressure, the temperature of the internal space is increased so that the pressure in the internal space can reach the predetermined pressure.

[0019] In one embodiment, the temperature of the interior space is controlled by at least one of a first temperature control member or a second temperature control component, the first temperature control member controlling the temperature of the interior space by generating heat from the outside of the tank, and the second temperature control component controlling the temperature of the interior space by generating heat in the interior space.

[0020] In one embodiment, a bimetallic part is installed to contact the can and connect to a power line supplying power to the first or second temperature control component, thus preventing power supply when the temperature of the can rises to a predetermined temperature.

[0021] In one embodiment, the pressure of the interior space is measured by a pressure measuring member installed at a supply line communicating with the interior space and supplying the processing fluid to the interior space, or installed at a supply line within the interior space.

[0022] In one embodiment, the processing fluid is supplied to the interior space in a gaseous state, and at least a portion of the processing fluid undergoes a phase transition to a supercritical state within the interior space and is transferred to the chamber.

[0023] The present invention provides a substrate processing apparatus, comprising: a chamber having a processing space for processing a substrate; a fluid supply unit configured to supply processing fluid to the processing space; and a controller, wherein the fluid supply unit includes: a tank having an internal space; a first supply line supplying processing fluid to the internal space; a second supply line transferring processing fluid from the internal space to the processing space; a temperature control component controlling the temperature of the internal space; and a pressure measuring component measuring the pressure of the internal space, wherein the controller controls the temperature control component to control the temperature of the internal space based on the measured pressure of the internal space measured by the pressure measuring component.

[0024] In one embodiment, the controller controls the temperature control component to regulate the temperature of the internal space so that the pressure in the internal space can reach a predetermined pressure.

[0025] In one embodiment, when the pressure in the internal space is lower than a predetermined pressure, the controller controls the temperature control component to raise the temperature of the internal space so that the pressure in the internal space can reach the predetermined pressure.

[0026] In one embodiment, the temperature control component includes at least one of a first temperature control component surrounding the tank or a second temperature control component that controls the temperature of the interior space by generating heat in the interior space.

[0027] In one embodiment, the second temperature control element includes: a shaft; and at least one heating plate mounted on the shaft.

[0028] In one embodiment, the fluid supply unit further includes a bimetallic section, which is mounted to contact the tank and connected to a power line supplying power to the temperature control component.

[0029] In one embodiment, the fluid supply unit further includes a bimetallic section, which is mounted to contact the tank and connected to a signal line that transmits signals generated by the controller.

[0030] In one embodiment, a first supply line supplies a gaseous fluid to the interior space, and a temperature regulating member heats the interior space to transform the gaseous processing fluid supplied to the interior space into a supercritical state.

[0031] In one embodiment, the pressure measuring component is placed in an internal space or installed on the first supply line.

[0032] The present invention provides a substrate processing apparatus, comprising: a chamber having a processing space for processing a substrate using a processing fluid in a supercritical state; a fluid supply unit configured to supply processing fluid to the processing space; and a controller controlling the fluid supply unit, wherein the fluid supply unit comprises: a tank having an internal space; a first supply line supplying processing fluid to the internal space; a second supply line transferring processing fluid from the internal space to the processing space; a heater transferring heat to the atmosphere of the internal space; and a pressure measuring member measuring the pressure of the internal space, wherein the controller controls the heater to transfer heat to the atmosphere of the internal space such that the pressure of the internal space measured by the pressure measuring member reaches a predetermined pressure.

[0033] In one embodiment, the controller controls the heater to raise the temperature of the interior space, so that when the pressure of the interior space measured by the pressure measuring member is lower than a predetermined pressure, the pressure of the interior space can reach the predetermined pressure.

[0034] In one embodiment, the fluid supply unit further includes a second valve installed at the second supply line, and the controller sets the second valve to "open" or "close" at least once.

[0035] In one embodiment, the fluid supply unit further includes a bimetallic section, which is mounted to contact the tank and connected to a power line supplying power to the heater.

[0036] According to embodiments of the present invention, the temperature of the processed fluid can be effectively controlled.

[0037] According to the embodiments of the present invention, the occurrence of overshoot can be minimized.

[0038] According to the embodiments of the present invention, the temperature and pressure of the internal space of the tank can be effectively controlled.

[0039] According to the embodiments conceived in this invention, the temperature of the internal space of the tank can be precisely controlled.

[0040] The effects of this invention are not limited to those described above; those skilled in the art can clearly understand any effects not mentioned based on this specification and the accompanying drawings. Attached Figure Description

[0041] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals in the various drawings refer to the same parts, and wherein:

[0042] Figure 1 The diagram illustrates a conventional substrate processing apparatus for supercritical drying.

[0043] Figure 2 It is shown Figure 1 The graphs show the pressure and temperature changes inside the tank and the pressure changes in the treatment space of the supercritical chamber.

[0044] Figure 3 The figure illustrates a substrate processing apparatus according to an embodiment of the concept of the present invention;

[0045] Figure 4 The diagram shows the setting. Figure 3 The substrate processing apparatus in the liquid processing chamber;

[0046] Figure 5 The diagram shows the setting. Figure 3 The substrate processing apparatus in the drying chamber;

[0047] Figure 6 Schematic diagram Figure 5 Fluid supply unit;

[0048] Figure 7 Schematic map shows Figure 6 The cross-section of the second temperature control component;

[0049] Figure 8 Schematic diagram Figure 6 The function of the bimetallic part;

[0050] Figure 9 It is shown Figure 6 The graph shows the pressure and temperature changes inside the tank and the pressure changes in the processing space of the chamber.

[0051] Figure 10 The figure illustrates a fluid supply unit according to another embodiment of the concept of the present invention. Detailed Implementation

[0052] The inventive concept can be modified in various ways and can take many forms, and its specific embodiments will be shown and described in detail in the accompanying drawings. However, the embodiments according to the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions within the spirit and technical scope encompassed within it. In the description of the inventive concept, detailed descriptions of relevant known technologies may be omitted where the essence of the inventive concept may be unclear.

[0053] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It will be further understood that the terms “comprising” and / or “including”, when used in this specification, specify the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “exemplary” is intended to refer to an example or illustration.

[0054] Singular expressions include plural expressions unless they clearly have different meanings in the context. Furthermore, for clarity, the shape and size of elements in a diagram may be exaggerated.

[0055] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or portion from another region, layer, or portion. Therefore, without departing from the teachings of the inventive concept, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion.

[0056] It should be understood that when an element or component is referred to as "on another element or component," "connected to another element or component," "linked to another element or component," or "adjacent to another element or component," it can be directly on, connected to, linked to, or adjacent to other elements or components, or there may be intermediate elements or components. Conversely, when an element or component is referred to as "directly on another element or component," "directly connected to another element or component," "directly linked to another element or component," or "directly adjacent to another element or component," there are no intermediate elements or components. Other expressions explaining the relationship between elements, such as when an element is referred to as "between two other elements," can be directly between two other elements or indirectly between two other elements.

[0057] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those commonly understood by one of ordinary skill in the art to which this inventive concept pertains. Unless expressly defined in this application, terms such as those defined in common dictionaries should be interpreted as consistent with the context of the relevant art, rather than as ideal or overly formal.

[0058] In the following text, reference will be made to Figures 3 to 10 The embodiments of the present invention will be described in detail.

[0059] Figure 3 A substrate processing apparatus according to an embodiment of the present invention is shown. The substrate processing apparatus includes a transposition module 10, a processing module 20, and a controller 30. When viewed from above, the transposition module 10 and the processing module 20 are arranged in a row in sequence. In the following, the arrangement direction of the transposition module 10 and the processing module 20 will be referred to as the first direction X, the direction perpendicular to the first direction X when viewed from above will be referred to as the second direction Y, and the direction perpendicular to the first direction X and the second direction Y will be referred to as the third direction Z.

[0060] The transposition module 10 transfers the substrate W from the container C storing the substrate W to the processing module 20, and the processing module 20 stores the processed substrate W in the container C. The transposition module 10 is configured such that its length extends along the second direction Y. The transposition module 10 has a loading port 12 and a transposition frame 14. The transposition frame 14 is placed between the loading port 12 and the processing module 20. The container C storing the substrate W is placed at the loading port 12. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be positioned along the second direction Y.

[0061] For container C, a closed container C, such as a front-opening standard container (FOUP), can be used. Container C can be placed on loading port 12 by a conveying device (not shown) such as an overhead conveyor, overhead transport, or automated guided vehicle, or container C can be placed on loading port 12 by an operator.

[0062] A sorting robot 120 is disposed inside a sorting frame 14. In the sorting frame 14, a guide rail 124 is configured to extend its length along a second direction Y, and the sorting robot 120 is configured to move along the guide rail 124. The sorting robot 120 includes a hand 122 on which a substrate W is placed. The hand 122 is configured to move back and forth, rotate about a third direction Z, and move along the third direction Z. Multiple hands 122 can be disposed and spaced apart in the up / down direction, and each hand can be configured to move back and forth independently.

[0063] The controller 30 can control the substrate processing apparatus 10. The controller 30 may include a process controller comprising: a microprocessor (computer) for controlling the substrate processing apparatus 10; a user interface such as a keyboard (via which an operator inputs commands to manage the substrate processing apparatus 10) and / or a display showing the operation of the substrate processing apparatus 10; and a memory unit for storing processing schemes (i.e., control programs for executing the processing process of the substrate processing apparatus 10 by controlling the process controller or programs according to data and processing conditions to execute the components of the substrate processing apparatus 10). Furthermore, the user interface and the memory unit may be connected to the process controller. The processing scheme may be stored in a storage medium in the memory unit, which may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0064] Furthermore, the controller 30 can control the fluid supply unit 600, which will be described later. For example, the controller 30 can control at least one of the first valve 621, the second valve 631, the top valve 634, the bottom valve 636, or the temperature control component 650, which will be described later. Additionally, the controller 30 can control the temperature control component 650, which will be described later, based on pressure measurements taken by the pressure measuring component 640, which will be described later.

[0065] The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides space for the substrate W transported into and out of the processing module 20 to temporarily reside. The liquid processing chamber 400 supplies liquid to the substrate W to perform a liquid processing process on the substrate W. The drying chamber 500 performs a drying process to remove residual liquid from the substrate W. The transfer chamber 300 transfers the substrate W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0066] The transfer chamber 300 is configured such that its length is parallel to the first direction X. A buffer unit 200 is placed between the indexing module 10 and the transfer chamber 300. A liquid processing chamber 400 and a drying chamber 500 are placed on the surface of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 are positioned along the second direction Y. The drying chamber 500 and the transfer chamber 300 are positioned along the second direction Y. The buffer unit 200 is placed at the end of the transfer chamber 300.

[0067] According to one embodiment, liquid processing chambers 400 can be disposed on both sides of transfer chamber 300, and drying chambers 500 can be disposed on both sides of transfer chamber 300, with liquid processing chambers 400 positioned closer to buffer unit 200 than drying chambers 500. On one surface of transfer chamber 300, liquid processing chambers 400 can be arranged in an array of A×B (A and B are each a natural number of 1 or greater) along a first direction X and a third direction Z, respectively. Furthermore, on one surface of transfer chamber 300, drying chambers 500 can each be arranged in an array of C×D (C and D are each a natural number of 1 or greater) along the first direction X and the third direction Z, respectively. Unlike the above description, only liquid processing chambers 400 can be disposed on one surface of transfer chamber 300, and only drying chambers 500 can be disposed on the other side.

[0068] The transfer chamber 300 includes a transfer robot 320. A guide rail 324 can be provided in the transfer chamber 300, with its length direction along a first direction X. The transfer robot 320 can be configured to move along the guide rail 324. The transfer robot 320 may include a hand 322 on which a substrate W is placed. The hand 322 can be configured to move back and forth, rotate about a third direction Z, and move along the third direction Z. Multiple hands 322 are spaced apart in the up / down direction, and the hands 322 can move back and forth independently of each other.

[0069] The buffer unit 200 includes multiple buffers 220, on which the substrate W is placed. The buffers 220 can be arranged to be spaced apart from each other in the third direction Z. The front and back of the buffer unit 200 are open. The front is the surface facing the indexing module 10, and the back is the surface facing the transfer chamber 300. The indexing robot 120 can enter the buffer unit 200 through the front, and the transfer robot 320 can enter the buffer unit 200 through the back.

[0070] Figure 4 schematically shown Figure 3 Implementation method of the liquid handling chamber. (See reference) Figure 4 The liquid processing chamber 400 provided in the substrate processing apparatus may include a housing 410, a cup-shaped portion 420, a support unit 440, a liquid supply unit 460, and a lifting / lowering unit 480.

[0071] The housing 410 may have an internal space for processing the substrate W. The housing 410 may be configured in a generally hexahedral shape. For example, the housing 410 may have a cuboid shape. In addition, openings (not shown) may be formed in the sidewalls of the housing 410. The openings may serve as inlets / outlets for the substrate W to enter or leave the internal space. Furthermore, a door (not shown) may be provided at the housing 410 to selectively open or close the openings.

[0072] The cup-shaped portion 420 may have an inverted U-shape. The cup-shaped portion 420 may have a processing space, within which the substrate W can be liquid-processed. A support unit 440 supports the substrate W within the processing space. A liquid supply unit 460 supplies processing liquid to the substrate supported by the support unit 400. Various processing liquids can be provided and can be supplied to the substrate W sequentially. A lifting / lowering unit 480 can adjust the relative height between the cup-shaped portion 420 and the support unit 440.

[0073] According to one embodiment, the cup-shaped portion 420 has a plurality of recovery containers 422, 424, and 426. Each of the recovery containers 422, 424, and 426 has a recovery space for recovering liquid used in substrate processing. Each of the recovery containers 422, 424, and 426 is arranged in an annular shape around the support unit 440. During the liquid processing process, the processing liquid spilled by the rotation of the substrate W is introduced into the recovery space through the respective inlets 422a, 424a, and 426a of the recovery containers 422, 424, and 426. According to one embodiment, the cup-shaped portion 420 has a first recovery container 422, a second recovery container 424, and a third recovery container 426. The first recovery container 422 is configured to surround the support unit 440, the second recovery container 424 is configured to surround the first recovery container 422, and the third recovery container 426 is configured to surround the second recovery container 424. The second inlet 424a for introducing liquid into the second recycling container 424 may be located above the first inlet 422a for introducing liquid into the first recycling container 422, and the third inlet 426a for introducing liquid into the third recycling container 424a may be located above the second inlet 424a.

[0074] The support unit 440 includes a support plate 442 and a drive shaft 444. The top surface of the support plate 442 is generally circular and may have a diameter larger than that of the substrate W. A support pin 442a is provided at the center of the support plate 442 to support the bottom surface of the substrate W, and the support pin 442a is configured to protrude from the support plate 442 such that the substrate W is spaced apart from the support plate 442 by a predetermined distance. A chuck pin 442b is provided at the edge of the support plate 442. The chuck pin 442b is configured to protrude upward from the support plate 442 and support the surface of the substrate W such that the substrate W does not separate from the support unit 440 when the substrate W rotates. The drive shaft 444 is driven by a driver 446, connected to the center of the bottom surface of the substrate W, and rotates the support plate 442 about its central axis.

[0075] According to one embodiment, the liquid supply unit 460 may include nozzles 462. Nozzles 462 may supply a processing liquid to the substrate W. The processing liquid may be a chemical, a rinsing solution, or an organic solvent. The chemical may be a chemical with strong acid or strong base properties. Furthermore, the rinsing solution may be deionized water. Furthermore, the organic solvent may be isopropanol (IPA). Additionally, the liquid supply unit 460 may include multiple nozzles 462, and each nozzle 462 may supply a different type of processing liquid. For example, one nozzle 462 may supply a chemical, another nozzle 462 may supply a rinsing solution, and yet another nozzle 462 may supply an organic solvent. Furthermore, the controller 30 may control the liquid supply unit 460 to supply an organic solvent from one of the nozzles 462 to the substrate W after supplying a rinsing solution from another nozzle 462. Therefore, the rinsing solution supplied to the substrate W may be replaced by an organic solvent with low surface tension.

[0076] The lifting / lowering unit 480 moves the cup-shaped portion 420 in the vertical direction. The relative height between the cup-shaped portion 420 and the substrate W changes due to the vertical movement of the cup-shaped portion 420. As a result, the recovery containers 422, 424, and 426 for recovering the processing liquid change according to the type of liquid supplied to the substrate W, thereby allowing for individual liquid recovery. Unlike the above description, the cup-shaped portion 420 can be fixedly mounted, and the lifting / lowering unit 480 can move the support unit 440 in the vertical direction.

[0077] Figure 5 Schematic map shows the setting Figure 3 The substrate processing apparatus in the drying chamber. (Reference) Figure 5 The drying chamber 500 equipped with the substrate processing apparatus can remove residual processing liquid on the substrate W by using a processing fluid in a supercritical state. For example, the drying chamber 500 equipped with the substrate processing apparatus can perform a drying process that uses supercritical carbon dioxide (CO2) to remove residual organic solvents on the substrate W.

[0078] The drying chamber 500 may include a chamber 510, a heating element 520, a fluid supply unit 600, a fluid discharge line 550, and a lifting / lowering element 560. The chamber 510 may have a processing space 518 in which the substrate W is processed. The chamber 510 may provide a processing space 518 in which the substrate W is dried by a processing fluid in a supercritical state. The chamber 518 may be referred to as a container.

[0079] The chamber 510 may include an upper body 512 (in an embodiment of a first body) and a lower body 514 (in an embodiment of a second body). The upper body 512 and the lower body 514 may be combined with each other to form a processing space 518 in which the substrate W is processed. The substrate W may be supported in the processing space 518. For example, the substrate W may be supported in the processing space 518 by a support member (not shown). The support member 513 may be configured to support the bottom surface of the edge portion of the substrate W. Either the upper body 512 or the lower body 514 may be coupled to a lifting / lowering member 560 for movement in an up / down direction. For example, the lower body 514 may be coupled to the lifting / lowering member 560 for movement in an up / down direction via the lifting / lowering member 560. Therefore, the processing space 518 of the chamber 510 may be selectively sealed. In the above example, the lower body 514 is coupled to the lifting / lowering member 560 for movement in an up / down direction, but the inventive concept is not limited thereto. For example, the upper body 512 can be connected to the lifting / lowering member 560 to move in the up / down direction.

[0080] The heating element 520 can heat the dried fluid G supplied to the processing space 518. The heating element 520 can raise the temperature of the processing space 518 in the chamber 510, causing the processing fluid G (e.g., a high-pressure gas including CO2) supplied to the processing space 518 to undergo a phase change and enter a supercritical state. Furthermore, the heating element 520 can raise the temperature of the processing space 518 in the chamber 510 to maintain the supercritical state of the supercritical processing fluid G supplied to the processing space 518.

[0081] Furthermore, the heating element 520 can be embedded in the chamber 510. For example, the heating element 520 can be embedded in either the upper body 512 or the lower body 514. For example, the heating element 520 can be disposed in both the upper body 512 and the lower body 514. However, the inventive concept is not limited thereto, and the heating element 520 can be disposed at various locations capable of raising the temperature of the processing space 518. The heating element 520 can be a heater. However, the inventive concept is not limited thereto, and the heating element 520 can be modified in various ways to use known devices capable of raising the temperature of the processing space 518.

[0082] The fluid supply unit 600 supplies processing fluid to the processing space 518 of the chamber 510. The fluid supply unit 600 can supply heated processing fluid to the processing space 518 of the chamber 510. The fluid supply unit 600 may include a tank 610, a first supply line 620, and a second supply line 630. The first supply line 620 may be connected to a fluid supply source (not shown) to deliver new processing fluid to the tank 610. A first valve 621 may be installed at the first supply line 620. The first valve 621 may be an on / off valve or a flow control valve. The temperature of the processing liquid supplied to the tank 610 can be controlled at the tank 610. For example, the processing liquid supplied to the tank 610 may be heated at the tank 610. The heated processing liquid at the tank 610 may change from a gaseous phase to a supercritical state. The heated processing fluid in the tank 610 can be supplied to the processing space 518 via the second supply line 630. A second valve 631 may be installed at the second supply line 630. The second valve 631 can be an on / off valve or a flow control valve.

[0083] Furthermore, the second supply line 630 can branch into multiple supply lines. For example, one of the supply lines branching from the second supply line 630 can be an upper supply line 633. Another supply line branching from the second supply line 630 can be a lower supply line 635. The upper supply line 633 can supply the processing fluid to the processing space 518 in a top-to-bottom direction. The lower supply line 635 can supply the processing fluid to the processing space 518 in a bottom-to-top direction. The upper supply line 633 can be connected to the upper body 512. The lower supply line 635 can be connected to the lower body 514. An upper valve 634 can be installed on the upper supply line 633. The upper valve 634 can be an on / off valve or a flow control valve. Furthermore, a lower valve 636 can be installed on the lower supply line 635. The lower valve 636 can be an on / off valve or a flow control valve.

[0084] Fluid discharge line 550 can discharge processed fluid from the processing space 518 of chamber 510. Fluid discharge line 550 can be connected to a pressure reducing component (not shown), such as a pump. Additionally, a discharge valve (not shown) can be installed at fluid discharge line 550. The discharge valve can be an on / off valve or a flow control valve.

[0085] Figure 6 Schematic map shows Figure 5 The shape of the fluid supply unit. Reference Figure 6 According to an embodiment of the present invention, the fluid supply unit 600 may include a tank 610, the first supply line 620, the first valve 621, the second valve 631, a pressure measuring component 640, a temperature control component 650, a bimetallic part 660, and a temperature measuring component 670.

[0086] Tank 610 may have an internal space 612. Tank 610 may be made of a material that is pressure-resistant and heat-resistant, capable of withstanding high pressure and high temperature. Within the internal space 612 of tank 610, the processing fluid supplied to the internal space 612 may be heated. At least a portion of the processing fluid heated within the internal space 612 may undergo a phase transition from a gaseous state to a supercritical state.

[0087] The first supply line 620 can supply new processing fluid to the internal space 612. The second supply line 620 can transfer heated processing fluid from the internal space 612 to the processing space 518 of the chamber 510.

[0088] The pressure measuring component 640 can measure the pressure of the internal space 612. For example, the pressure measuring component 640 can measure the pressure of the atmosphere in the internal space 612. The pressure measuring component 640 can be disposed in a hollow space within the internal space 612. The pressure measuring component 640 can be a component with specifications capable of withstanding high pressure and high temperature. The pressure value of the internal space 612 measured by the pressure measuring component 640 can be transmitted to the aforementioned controller 30.

[0089] Temperature control component 650 can regulate the temperature of the internal space 612. For example, temperature control component 650 can increase the temperature of the internal space 612. For example, temperature control component 650 can transfer heat to the atmosphere of the internal space 612. Furthermore, temperature control component 650 can be controlled by controller 30. For example, controller 30 can control temperature control component 650 in a PID manner. Temperature control component 650 can change the phase of the gaseous processing fluid supplied to the internal space 612 to a supercritical state by heating the internal space 612. Temperature control component 650 may include a first temperature control component 651 and a second temperature control component 656. The heat generated by temperature control component 650 can be high heat. However, the inventive concept is not limited thereto; the heat generated by temperature control component 650 can also be cold heat.

[0090] A first temperature control component 651 can generate heat on the outside of the tank 610 to control the temperature of the internal space 612. The first temperature control component 651 can be configured to surround the outer wall of the tank 610. The first temperature control component 651 may include a body 652 and a heating unit 653. The body 652 can be configured to surround the outer wall of the tank 610. The heating unit 653 can be mounted on the body 652. The heating unit 653 can be electrically connected to a first power line 654 for transmitting drive power to the heating unit 653. The first temperature control component 651 may be a jacketed heater.

[0091] The second temperature control component 656 can generate heat in the internal space 612 to regulate the temperature of the internal space 612. The second temperature control component 656 may include a shaft 657 and a heating plate 658. Figure 7 A cross-sectional view of the second temperature control member 656 is shown when viewed from the longitudinal direction of shaft 657, and at least one of the heating plates 658 described above can be mounted at shaft 657, as shown. Figure 7 As shown. For example, multiple heating plates 658 may be mounted at a shaft 657 and spaced apart from each other circumferentially relative to the shaft 657. A second temperature control member 656 may be electrically connected to a second power line 659, which transmits drive power to the heating plates 658 and / or the shaft 657. The second temperature control member 656 may be a cylindrical heater.

[0092] In addition, although Figure 6 and Figure 7 The illustration shows a single second temperature control member 656 as an example, but the inventive concept is not limited thereto. For example, multiple second temperature control members 656 may be provided. For example, multiple second temperature control members 656 may be spaced apart from each other. The provided multiple second temperature control members 656 may be connected to each other by brazing or the like via connecting members disposed therebetween.

[0093] refer to Figure 6 The fluid supply unit 600 of this invention may further include a bimetallic section 660. The bimetallic section 660 may be a rod-shaped component made from a single sheet by stacking and attaching thin metal plates with very different coefficients of thermal expansion. When heat is applied to the bimetallic section 660, the bimetallic section 660 exhibits bending characteristics. Therefore, when the temperature of the bimetallic section 660 rises excessively, the bimetallic section 660 can perform a behavior similar to... Figure 8 The switch shown functions as follows. When the temperature of the tank 610 rises excessively, this characteristic of the bimetallic part 660 allows for interlocking on the substrate processing apparatus provided in the drying chamber 500, or the temperature control member 650 to stop generating heat.

[0094] For example, refer to Figure 6 The bimetallic portion 660 may include a first bimetallic portion 661, a second bimetallic portion 662, and a third bimetallic portion 663. The first bimetallic portion 661, the second bimetallic portion 662, and the third bimetallic portion 663 may be mounted to contact the can 610, respectively. For example, the first bimetallic portion 661, the second bimetallic portion 662, and the third bimetallic portion 663 may be mounted on the outer wall of the can 610.

[0095] The first bimetallic portion 661 can be connected to a power line supplying power to the second temperature control member 656. Therefore, when the temperature of the can 610 rises excessively (e.g., when the temperature rises above a predetermined temperature), the shape of the first bimetallic portion 661 deforms to prevent power from being transmitted to the second temperature control member 656.

[0096] The second bimetallic portion 662 can be connected to a power supply line that supplies power to the first temperature control member 651. Therefore, when the temperature of the can 610 rises excessively (e.g., when the temperature rises above a predetermined temperature), the shape of the second bimetallic portion 662 deforms to prevent power from being transmitted to the first temperature control member 651.

[0097] The third bimetallic section 663 can be signal-connected to the controller 30. For example, the third bimetallic section 663 can be connected to a signal line 31. The signal line 31 can be a line that allows the controller 30 to receive a signal returned in a feedback manner when the controller 30 generates a specific signal at a predetermined period. Therefore, when the temperature of the tank 610 rises excessively (e.g., when the temperature rises above a certain temperature), the shape of the third bimetallic section 663 deforms. In this case, the specific signal generated by the controller 30 cannot be returned to the controller 30. In this case, the controller 30 can determine that the temperature of the tank 610 has risen excessively and generate an interlock to stop driving the substrate processing apparatus provided in the drying chamber 500.

[0098] The temperature measuring component 670 can be a temperature sensor for measuring the temperature of the internal space 612. The temperature measuring component 670 can be provided as a sensor with excellent specifications in terms of pressure resistance and heat resistance to withstand the high pressure and high temperature conditions of the internal space 612. The temperature value of the internal space 612 measured by the temperature measuring component 670 can be transmitted to the controller 30.

[0099] The following will describe in detail a method for controlling the temperature of the internal space 612 of a tank 610 containing processing fluid delivered to chamber 510, according to an embodiment of the present invention. The controller 30 can control at least one of the fluid supply unit 600 and other components of the substrate processing apparatus disposed in the drying chamber 500 to perform the temperature control method described below.

[0100] Figure 9 It is shown Figure 6 The graphs show the pressure and temperature changes within the tank's internal space, as well as the pressure changes in the processing space of the chamber. These will be referenced below. Figure 9 A temperature control method according to an embodiment of the present invention is described. Figure 9 In the graph shown, the X-axis represents time t, and the Y-axis represents the pressure PT of the internal space 612, the temperature FT of the internal space 612, and the pressure PC of the processing space 518.

[0101] The first supply line 620 supplies new processing fluid to the internal space 612 of the tank 610. The processing fluid supplied to the internal space 612 can be heated by heat generated by the temperature control member 650. The heated fluid can be transferred to the processing space 518 of the chamber 510 via the second supply line 630. For example, the pressure in the processing space 518 gradually increases from a first time point t11, at which point a supercritical processing of the substrate W begins in the processing space 518. When the pressure in the processing space 518 reaches a predetermined pressure, the pressure in the processing space 518 can be kept constant for a predetermined time. Alternatively, the increase or decrease in pressure can be repeated for a predetermined time. In this case, the second valve 631 installed on the second supply line 630 can be opened or closed at least once. Furthermore, after a predetermined time has elapsed, the pressure in the processing space 518 can be reduced. The pressure in the processing space 518 can be reduced when the processing fluid supplied to the processing space 518 is discharged through the discharge line 550.

[0102] When the first time point t11 ​​is reached, the pressure in the internal space 612 can decrease. This is because the processing fluid flows out of the internal space 612 and is transferred to the processing space 518. As the pressure in the internal space 612 decreases, the first supply line 620 can supply new processing fluid to the internal space 612. The temperature of the new processing fluid can be slightly lower than the temperature of the remaining processing fluid in the internal space 612. Therefore, the temperature of the internal space 612 can be slightly reduced. In this case, the temperature control member 650 can regulate the temperature of the internal space 612. For example, the temperature control member 650 can regulate the temperature of the internal space 612 based on the pressure of the internal space 612 measured by the pressure measuring member 640. For example, the temperature control member 650 can increase the temperature of the internal space 612 based on the pressure measurement value of the internal space 612 measured by the pressure measuring member 640 instead of the temperature measurement value of the internal space 612. For example, the temperature control member 650 can transfer heat to the internal space 612 so that the pressure of the internal space 612 can reach a predetermined pressure SP. For example, when the pressure in the internal space 612 is lower than the predetermined pressure SP, the temperature control member 650 can increase the temperature of the internal space 612 so that the pressure in the internal space 612 reaches the predetermined pressure SP. That is, since the temperature control member 650 controls the temperature of the internal space 612 based on the pressure of the internal space 612 measured by the pressure measuring member 540, the temperature change and the pressure change of the internal space 612 can have similar patterns.

[0103] In conventional substrate processing apparatuses, temperature control of the internal space 612 of the tank 610 is based on temperature values ​​measured by a temperature measuring member 670 that measures the temperature of the internal space 612. In this case, the temperature value measured by the temperature measuring member 670 can vary depending on its location within the internal space 612. For example, when the temperature measuring member 670 is positioned adjacent to the first supply line 620, the temperature value measured by the temperature measuring member 670 may be slightly lower; conversely, when the temperature measuring member 670 is positioned adjacent to the second supply line 630, the temperature value measured by the temperature measuring member 670 may be slightly higher. That is, due to the temperature deviation measured based on the arrangement position of the temperature measuring member 670, accurate temperature control of the internal space 612 by the temperature control member 650 may not be possible. Furthermore, when the temperature regulating member 650 regulates the temperature of the internal space 612 based on the temperature value measured by the temperature measuring member 670, the responsiveness of the temperature regulating member 650 depends on changes in the temperature value measured by the temperature measuring member 670. However, since temperature changes are based on heat conduction, changes in temperature measured by the temperature regulating member 650 are slightly less sensitive. Therefore, the responsiveness of temperature control via the temperature control member 650 is also low.

[0104] However, the temperature control of the internal space 612 according to the embodiment of the present invention is based on the pressure value measured by the pressure measuring member 640 rather than the temperature value measured by the temperature measuring member 670. Since the pressure is the same in all interconnected areas of the internal space 612, there is no problem of deviation in the pressure value measured according to the position of the pressure measuring member 640. Furthermore, since the pressure change of the pressure measuring member 640 is based on the flow of the process fluid, which can be in a supercritical state, the responsiveness is very high. This can increase the responsiveness of temperature control via the temperature control member 650.

[0105] Furthermore, since the temperature control of the internal space 612 by the temperature control component 650 is based on the pressure measurement value of the internal space 612, the occurrence of the above-mentioned overshoot problem can be minimized.

[0106] In the above example, the pressure measuring component 640 is installed in the internal space 612, but the inventive concept is not limited thereto. For example, as Figure 10 As shown, the pressure measuring component 640 can be installed at the first supply line 620, which is in fluid communication with the internal space 612.

[0107] The effects of this invention are not limited to those described above. Those skilled in the art can clearly understand the effects not mentioned based on the specification and drawings.

[0108] Although preferred embodiments of the inventive concept have been described and illustrated to date, the inventive concept is not limited to the specific embodiments described above. It should be noted that those skilled in the art to which the inventive concept relates can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A method for controlling the temperature inside a tank storing a process fluid transferred to a chamber, the method comprising: The processing fluid is supplied to the internal space of the tank; The processing fluid is heated in the internal space; and The heated processing fluid is delivered to the chamber, and The temperature of the internal space is controlled based on the measured pressure within the internal space. The temperature of the internal space is controlled such that the pressure in the internal space reaches a predetermined pressure. When the measured pressure of the internal space is lower than the predetermined pressure, the internal space is heated to increase the temperature of the internal space and the pressure of the internal space reaches the predetermined pressure.

2. The method of claim 1, wherein the temperature of the interior space is controlled by at least one of a first temperature control member or a second temperature control member, the first temperature control member controlling the temperature of the interior space by generating heat from outside the tank, and the second temperature control member controlling the temperature of the interior space by generating heat in the interior space.

3. The method of claim 2, wherein a bimetallic portion is installed to contact the can and the bimetallic portion is connected to a power line supplying power to the first temperature control member or the second temperature control member, such that power supply is blocked when the temperature of the can rises to a predetermined temperature.

4. The method of claim 1, wherein the pressure in the interior space is measured by a pressure measuring member, the pressure measuring member being installed at a supply line communicating with the interior space and supplying the processing fluid to the interior space, or at the supply line installed in the interior space.

5. The method of claim 1, wherein the processing fluid is supplied to the internal space in a gaseous state, and wherein at least a portion of the processing fluid undergoes a phase transition to a supercritical state in the internal space and is transferred to the chamber.

6. A substrate processing apparatus, comprising: A chamber having a processing space for processing a substrate; A fluid supply unit configured to supply processing fluid to the processing space; and Controller The fluid supply unit includes: A can, the can having an internal space; A first supply line supplies the processing fluid to the interior space; A second supply line, which delivers the processing fluid from the internal space to the processing space; Temperature control component, the temperature control component controlling the temperature of the internal space; and A pressure measuring component that measures the pressure in the internal space. The controller controls the temperature control component to control the temperature of the internal space based on the measured pressure of the internal space measured by the pressure measuring component. The controller controls the temperature control component to adjust the temperature of the internal space, thereby ensuring that the pressure in the internal space reaches a predetermined pressure. When the pressure in the internal space is lower than the predetermined pressure, the controller controls the temperature control component to generate heat, thereby increasing the temperature of the internal space and bringing the pressure in the internal space up to the predetermined pressure.

7. The substrate processing apparatus of claim 6, wherein the temperature control member comprises at least one of a first temperature control member surrounding the tank or a second temperature control member controlling the temperature of the internal space by generating heat in the internal space.

8. The substrate processing apparatus according to claim 7, wherein the second temperature control member comprises: axis; and At least one heating plate is mounted on the shaft.

9. The substrate processing apparatus of claim 6, wherein the fluid supply unit further comprises a bimetallic portion, and the bimetallic portion is mounted to contact the tank and connect to a power line supplying power to the temperature control member.

10. The substrate processing apparatus according to claim 6, wherein, The fluid supply unit also includes a bimetallic section, which is mounted to contact the tank and connect to a signal line that transmits signals generated by the controller.

11. The substrate processing apparatus of claim 6, wherein the first supply line supplies the gaseous fluid to the internal space, and the temperature regulating member heats the internal space to cause the gaseous processing fluid supplied to the internal space to undergo a phase transition to a supercritical state.

12. The substrate processing apparatus of claim 6, wherein the pressure measuring member is placed in the internal space or installed on the first supply line.

13. A substrate processing apparatus, comprising: A chamber having a processing space for processing a substrate using a processing fluid in a supercritical state; A fluid supply unit configured to supply processing fluid to the processing space; and Controller, the controller controls the fluid supply unit, The fluid supply unit includes: A can, the can having an internal space; A first supply line supplies the processing fluid to the interior space; A second supply line, which delivers the processing fluid from the internal space to the processing space; A heater that transfers heat to the atmosphere of the interior space; and A pressure measuring component that measures the pressure in the internal space. The controller controls the heater to transfer heat to the atmosphere of the interior space, causing the pressure in the interior space, as measured by the pressure measuring component, to reach a predetermined pressure. When the pressure in the internal space, as measured by the pressure measuring component, is lower than the predetermined pressure, the controller controls the heater to generate heat, thereby increasing the temperature of the internal space and bringing the pressure in the internal space to the predetermined pressure.

14. The substrate processing apparatus of claim 13, wherein the fluid supply unit further comprises a second valve installed at the second supply line, and the controller sets the second valve to "open" or "close" at least once.

15. The substrate processing apparatus according to any one of claims 13 to 14, wherein the fluid supply unit further comprises a bimetallic portion, and the bimetallic portion is mounted to contact the tank and connect to a power line supplying power to the heater.

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