Power amplification circuit, power amplification device, and RF circuit module

Abstract

The power amplifier circuit suppresses a change in an operating point of an amplifying transistor and deterioration of linearity of a relationship between input and output. The power amplifier circuit includes: an amplifying transistor having a base to which a radio frequency signal is supplied, amplifying the radio frequency signal and outputting; a resistance element having a first terminal and a second terminal electrically connected to the base of the amplifying transistor; a first bias transistor having a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to the first terminal of the resistance element and supplying a bias current to the base of the amplifying transistor through the resistance element; and a second bias transistor having an emitter electrically connected to the emitter of the first bias transistor and the first terminal of the resistance element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied.

Description

Technical Field

[0001] This invention relates to power amplifier circuits, power amplifier devices, and RF circuit modules. Background Technology

[0002] In mobile communication devices such as mobile phones, high-frequency amplifiers are used to amplify the power of radio frequency (RF) signals transmitted to base stations. Such high-frequency amplifiers include amplifiers that supply bias to high-frequency amplification transistors via bias transistors that form emitter follower circuits (e.g., Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2010-283556

[0004] As described in Patent Document 1, when using an emitter follower circuit to bias the transistor for high-frequency amplification, if the amplitude of the RF signal current (hereinafter, sometimes referred to as RF current) increases, the emitter follower circuit may become cut off.

[0005] Figure 56 This is a diagram showing the high-frequency amplifier circuit 901 of the reference example. Figure 57 This is a diagram used to illustrate the cutoff state. For example... Figure 56 as well as Figure 57 As shown, in the high-frequency amplifier circuit 901, the high-frequency amplifier transistor 911 has a base that receives the RF signal input to the input terminal 931 via a capacitor 914, a collector that outputs the amplified signal (after amplifying the RF signal) to the output terminal 932, and a grounded emitter. The collector of the high-frequency amplifier transistor 911 is supplied with a power supply voltage Vcc via an inductor 916. The base of the high-frequency amplifier transistor 911 is biased via a resistor element 912 disposed between the Bout terminal 934 and the base of the high-frequency amplifier transistor 911.

[0006] The base bias circuit 921 outputs a base bias voltage and current from the Bout terminal 934 based on the bias control signal input to the bias input terminal 933. Specifically, the bias transistor 913 in the base bias circuit 921 has a base connected to the bias input terminal 933, a collector connected to the terminal supplied with the battery voltage Vbat, and an emitter connected to the Bout terminal 934. A capacitor 915 is disposed between the bias input terminal 933 and ground.

[0007] When the high-frequency amplification transistor 911 is operating, the base bias current Ieef flowing from the Bout terminal 934 to the resistor element 912 is, for example, the current after the DC current is superimposed with the AC RF current. Specifically, for example, when the small-amplitude RF current varies along a sinusoidal curve over time, the base bias current I941 (see reference) has a waveform with the sinusoidal curve shifted to the positive side. Figure 57 The current flows from the Bout terminal 934 to the resistor element 912.

[0008] However, for example, when the RF current with a large amplitude varies along a sinusoidal curve over time, the base bias circuit 921 may become in a cut-off state where it does not supply the base bias current Ieef for a certain period of time. Specifically, in the waveform of the RF current varying along a sinusoidal curve, the portion that should flow with a negative current becomes a zero-ampere base bias current I942 flowing from the Bout terminal 934 to the resistor element 912 (see reference). Figure 57 This is because the junction between the base and emitter of the bias transistor 913 has a rectifying effect, preventing the flow of a base bias current Ieef that is less than zero.

[0009] In the base bias current I942, the current that should flow under negative conditions becomes zero amperes. Therefore, the DC current DC942 after time averaging of the base bias current I942 is larger than the DC current DC941 after time averaging of the base bias current I941.

[0010] In other words, as the amplitude of the RF current increases, the time average of the base bias current Ieef increases, and the operating point of the high-frequency amplifier transistor 911 changes. Generally speaking, if the operating point of the high-frequency amplifier transistor 911 changes, the amplification rate of the high-frequency amplifier transistor 911 changes. Therefore, in the high-frequency amplifier circuit 901, the linearity of the input-output relationship deteriorates, which is not preferable. Summary of the Invention

[0011] The present invention was made in view of the following circumstances, and aims to provide a power amplifier circuit, a power amplifier device, and an RF circuit module that suppress changes in the operating point of the amplifying transistor and suppress linear degradation of the input-output relationship.

[0012] One aspect of the power amplifier circuit of the present invention includes: an amplifying transistor having a base for supplying a radio frequency signal, amplifying the radio frequency signal, and outputting it; a resistive element having a first terminal and a second terminal electrically connected to the base of the amplifying transistor; a first biasing transistor having a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to the first terminal of the resistive element, and supplying a bias current to the base of the amplifying transistor through the resistive element; and a second biasing transistor having an emitter electrically connected to the emitter of the first biasing transistor and the first terminal of the resistive element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied.

[0013] According to the present invention, a power amplifier circuit, a power amplifier device, and an RF circuit module are provided that can suppress changes in the operating point of the amplifying transistor and suppress linear degradation of the input-output relationship. Attached Figure Description

[0014] Figure 1 (A) is a top view of the RF circuit module 300. Figure 1 (B) is a schematic representation Figure 1 (A) is a cross-sectional view of the RF circuit module 300 along line II-II.

[0015] Figure 2 (A) and Figure 2 (B) is a diagram showing the manufacturing process of the RF circuit module 300.

[0016] Figure 3 This is a diagram showing two heat conduction paths in the RF circuit module 300, which are heat dissipation paths originating from the circuit elements formed in the second component 210.

[0017] Figure 4 This is a diagram showing the manufacturing method of PA circuit element 301.

[0018] Figure 5 This is a diagram illustrating the manufacturing method of the second component 210 and the joining method between the second component 210 and the first component 110.

[0019] Figure 6 This is the circuit diagram of power amplifier circuit 61.

[0020] Figure 7 This is a circuit diagram of a first example of the first application circuit 431n and the second application circuit 431p.

[0021] Figure 8 This is a circuit diagram of a second example of the first application circuit 431n and the second application circuit 431p.

[0022] Figure 9 This is a circuit diagram of a third example of the first application circuit 431n and the second application circuit 431p.

[0023] Figure 10 This is a graph showing an example of the time variation of the base bias current Ieef in the power amplifier circuit 61.

[0024] Figure 11 This is a diagram showing an example of a cross-section of the power amplifier device 11.

[0025] Figure 12 This is a diagram showing an example of a cross-section of the power amplifier device 11a.

[0026] Figure 13 This is the circuit diagram of power amplifier circuit 62.

[0027] Figure 14 This is the circuit diagram of the first example of reference circuit 441.

[0028] Figure 15 This is the circuit diagram of the second example of reference circuit 441.

[0029] Figure 16 This is the circuit diagram of the third example of reference circuit 441.

[0030] Figure 17 This is the circuit diagram of the fourth example of reference circuit 441.

[0031] Figure 18 This is the circuit diagram of the fifth example of reference circuit 441.

[0032] Figure 19 This is the circuit diagram of the sixth example of reference circuit 441.

[0033] Figure 20 This is the circuit diagram of power amplifier circuit 63.

[0034] Figure 21 This is the circuit diagram of the first example of reference circuit 442.

[0035] Figure 22 This is the circuit diagram of the first example of the replication circuit 511.

[0036] Figure 23 This is the circuit diagram of the second example of the replication circuit 511.

[0037] Figure 24 This is the circuit diagram of the second example of reference circuit 442.

[0038] Figure 25 This is the circuit diagram of the third example of reference circuit 442.

[0039] Figure 26 This is the circuit diagram for the fourth example of reference circuit 442.

[0040] Figure 27 This is the circuit diagram for the fifth example of reference circuit 442.

[0041] Figure 28 This is the circuit diagram for the sixth example of reference circuit 442.

[0042] Figure 29 This is the circuit diagram for the seventh example of reference circuit 442.

[0043] Figure 30 This is the circuit diagram of the eighth example of reference circuit 442.

[0044] Figure 31 This is the circuit diagram of the ninth example of reference circuit 442.

[0045] Figure 32 This is the circuit diagram for the tenth example of reference circuit 442.

[0046] Figure 33 This is the circuit diagram for the eleventh example of reference circuit 442.

[0047] Figure 34 This is the circuit diagram for the twelfth example of reference circuit 442.

[0048] Figure 35 This is the circuit diagram of power amplifier circuit 64.

[0049] Figure 36 This is the circuit diagram of power amplifier circuit 65.

[0050] Figure 37 This is the circuit diagram of the first example of reference circuit 443.

[0051] Figure 38 This is the circuit diagram of the second example of reference circuit 443.

[0052] Figure 39 This is the circuit diagram of the third example of reference circuit 443.

[0053] Figure 40 This is the circuit diagram for the fourth example of reference circuit 443.

[0054] Figure 41 This is the circuit diagram for the fifth example of reference circuit 443.

[0055] Figure 42 This is the circuit diagram for the sixth example of reference circuit 443.

[0056] Figure 43 This is the circuit diagram of power amplifier circuit 66.

[0057] Figure 44 This is the circuit diagram of the first example of reference circuit 444.

[0058] Figure 45 This is the circuit diagram for the second example of reference circuit 444.

[0059] Figure 46 This is the circuit diagram for the third example of reference circuit 444.

[0060] Figure 47 This is the circuit diagram for the fourth example of reference circuit 444.

[0061] Figure 48 This is the circuit diagram for the fifth example of reference circuit 444.

[0062] Figure 49 This is the circuit diagram for the sixth example of reference circuit 444.

[0063] Figure 50 This is the circuit diagram for the seventh example of reference circuit 444.

[0064] Figure 51 This is the circuit diagram for the eighth example of reference circuit 444.

[0065] Figure 52 This is the circuit diagram for the ninth example of reference circuit 444.

[0066] Figure 53 This is the circuit diagram for the tenth example of reference circuit 444.

[0067] Figure 54 This is the circuit diagram for the eleventh example of reference circuit 444.

[0068] Figure 55 This is the circuit diagram for the twelfth example of reference circuit 444.

[0069] Figure 56 This is a diagram showing the high-frequency amplifier circuit 901 of the reference example.

[0070] Figure 57 It is a diagram used to illustrate the cutoff state.

[0071] Explanation of reference numerals in the attached figures

[0072] 11, 11a…Power amplifier device, 31…Input terminal, 32…Output terminal, 33n, 33p…Bias input terminal, 34…Control signal input terminal, 61, 62, 63, 64, 65, 66…Power amplifier circuit, 110…First component, 111…Adhesive layer, 113…First component side electrode, 114…Conductor post, 115…Solder layer, 116…First conductor protrusion, 119…Resist film, 121…Substrate, 122…First insulating film, 123…Second insulating film, 124…Third insulating film, 132…Inner conductor of first component, 134…TFR, 135…MIM, 141nB, 141pB…Base layer, 141nC, 141pC…Collector layer, 141n… E, 141pE…Emitter layer, 151n…NMOS, 151p…PMOS, 210…Second component, 211…Main substrate, 212…Release layer, 213…Second component side electrode, 213a…Emitter pad, 214…Conductor pillar, 215…Solder layer, 216…Second conductor protrusion, 221B…Base layer, 221C…Collector layer, 221E…Emitter layer, 222B…Base electrode, 222C…Collector electrode, 222E…Emitter electrode, 223E…Emitter wiring, 224…Interlayer insulating film, 225…First insulating film, 226…Second insulating film, 232…Second component inner conductor, 300…RF circuit module, 301…PA circuit element, 310…Module Substrate, 311, 312…substrate side electrodes, 313…molding resin, 351…inter-component connection conductor, 332…substrate terminal, 351…inter-component connection conductor, 352…bonding wire, 400…first circuit, 401, 402, 403, 404, 405, 406…base bias circuit, 421n…first bias transistor, 421p…second bias transistor, 423n…third bias transistor, 423p…fourth bias transistor, 425…Bout terminal, 426n, 426p…capacitor, 431n…first application circuit, 431p…second application circuit, 432np, 432pp…positive side terminal, 432nm, 432pm…negative side terminal, 433… …resistors, 434, 435…transistors, 441, 442, 443, 444…reference circuits, 445n, 445p…bias supply terminals, 445a…control terminals, 445r…shunt terminals, 451n, 451p…transistors, 452n, 452p…transistors, 453n, 453p…resistors, 454…operational amplifiers, 455…third application circuits, 500…second circuits, 501…amplifying transistors, 502…resistors, 503…inductors, 504…capacitors, 511…replication circuits, 512a…reference bias terminals, 512b…RF signal terminals, 512c…amplifying signal terminals, 521…seventh transistor, 522…resistors…524… capacitor. Detailed Implementation

[0073] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the same reference numerals are used for the same elements, and repetitive descriptions are omitted as much as possible.

[0074] [First Implementation Method]

[0075] An overview of the RF circuit module of the first embodiment will be described.

[0076] Figure 1 (A) is a top view of the RF circuit module 300. Figure 1 (B) is a schematic representation Figure 1 (A) is a cross-sectional view of the RF circuit module 300 along line II-II.

[0077] like Figure 1 (A) and Figure 1 As shown in (B), the RF circuit module 300 includes a power amplifier device 11 and a molding resin 313. The power amplifier device 11 includes a power amplifier (PA) circuit element 301 and a module substrate 310. The PA circuit element 301 includes a first component 110, a second component 210, a first component-side electrode 113, a first conductor protrusion 116 (first component-side conductor protrusion portion), a second component-side electrode 213, a second conductor protrusion 216 (second component-side conductor protrusion portion), and an inter-component connection conductor 351. The first conductor protrusion 116 includes a conductor post 114 and a solder layer 115. The second conductor protrusion 216 includes a conductor post 214 and a solder layer 215.

[0078] The accompanying diagrams sometimes show the x-axis, y-axis, and z-axis. The x-axis, y-axis, and z-axis form a right-handed, three-dimensional orthogonal coordinate system. Hereinafter, the direction of the arrow pointing towards the z-axis is sometimes referred to as the z-axis + side, and the opposite direction as the z-axis - side; the same applies to the other axes. Furthermore, the z-axis + side and z-axis - side are sometimes referred to as the "upper side" and "lower side," respectively.

[0079] The module substrate 310 is a printed circuit board (PCB), such as a glass substrate or an epoxy resin substrate, and has a cuboid shape. The module substrate 310 includes substrate-side electrodes 311 and 312 for mounting components. The molding resin 313 is, for example, epoxy resin.

[0080] The thermal conductivity of the first component 110 is greater than that of the second component 210. Furthermore, the thickness of the second component 210 is thinner than that of the first component 110. In this embodiment, the first component 110 is, for example, a component made of elemental semiconductor and has a cuboid shape. More specifically, the first component 110 is a component manufactured using an integrated circuit process (hereinafter, sometimes referred to as the first integrated circuit process) that uses semiconductors primarily composed of group IV elements as materials.

[0081] Here, the semiconductor with group IV elements as its main component is, for example, a semiconductor with Si (silicon) as its main component. The first integrated circuit process is, for example, CMOS (Complementary Metal Oxide Semiconductor) or BiCMOS (Bipolar-CMOS) complementary metal oxide semiconductor. In other words, a circuit (hereinafter, sometimes referred to as the first circuit) is formed on a semiconductor with Si (silicon) as its main component using the first integrated circuit process. Furthermore, the first component 110 may also be a component manufactured using the first integrated circuit process with semiconductors with SiGe (germanium silicon), C (carbon), or SiC (silicon carbide) as their main component materials.

[0082] In this embodiment, the second component 210 is, for example, a compound semiconductor component having a cuboid shape. Specifically, the second component 210 is a component manufactured using an integrated circuit process (hereinafter, sometimes referred to as a second integrated circuit process) that uses semiconductors primarily composed of compounds of Group III and Group V elements as materials. The aforementioned semiconductor is, for example, a GaAs (gallium arsenide) semiconductor. The second integrated circuit process is, for example, a GaAs heterojunction bipolar transistor (HBT) or a GaAs pHEMT (pseudo-morphic high electron mobility transistor). In other words, a circuit (hereinafter, sometimes referred to as a second circuit) is formed on a GaAs semiconductor primarily composed of a GaAs component using a GaAs HBT or GaAs pHEMT. The second circuit includes, for example, an amplifier that amplifies RF signals (radio frequency signals).

[0083] In addition, the second component 210 may also be a component manufactured by a second integrated circuit process (e.g., InP HBT or InP pHEMT) using semiconductors with InP (indium phosphide) as the main component or by a second integrated circuit process (e.g., GaN HBT or GaN HEMT) using semiconductors with GaN (calcium nitride) as the main component.

[0084] The first circuit in the first component 110 and the second circuit in the second component 210 are electrically connected via an inter-component connection conductor 351, without passing through the module substrate 310. In this embodiment, the inter-component connection conductor 351 may be formed, for example, as a conductor formed in either the first component 110 or the second component 210.

[0085] Figure 2 (A) and Figure 2 (B) is a diagram showing the manufacturing process of the RF circuit module 300. Figure 2 (A) is a cross-sectional view showing the state before the PA circuit element 301 is mounted on the module substrate 310. Figure 2 (B) is a cross-sectional view showing the state after the PA circuit element 301 is mounted on the module substrate 310.

[0086] The method for forming the PA circuit element 301 will be described later. A first conductor protrusion 116 and a second conductor protrusion 216 are formed on the lower surface of the PA circuit element 301. The first conductor protrusion 116 and the second conductor protrusion 216 of the PA circuit element 301 are aligned with the substrate-side electrodes 311 and 312 in the module substrate 310, respectively, and then heated and pressurized, as follows... Figure 2 As shown in (B), the solder layer 115 of the first conductor protrusion 116 and the solder layer 215 of the second conductor protrusion 216 of the PA circuit element 301 are respectively connected to the substrate side electrode 311 and the substrate side electrode 312.

[0087] Figure 3 This is a diagram showing two heat conduction paths in the RF circuit module 300, which are heat dissipation paths originating from the circuit elements formed in the second component 210. Figure 3 In the diagram, the dashed arrows indicate two heat conduction paths. The first heat conduction path is formed by the second component-side electrode 213 and the second conductor protrusion 216. The heat generated by the circuit elements is dissipated and dissipated to the substrate-side electrode 312 and the module substrate 310 through this first heat conduction path. The second heat conduction path is from the second component 210 to the first component 110. The heat generated by the circuit elements is dissipated and dissipated through the second heat conduction path.

[0088] Figure 4 This is a diagram showing the manufacturing method of PA circuit element 301. Figure 4 Steps S1 to S7 are cross-sectional views of the intermediate stages of manufacturing PA circuit element 301, and step S8 is a cross-sectional view of the completed PA circuit element 301. Although actual manufacturing is carried out on a wafer-by-wafer basis, Figure 4 The image shows a single semiconductor device.

[0089] like Figure 4As shown, firstly, a first component 110 is configured. Circuit elements and electrodes have already been formed on the first component 110 through other processes. Alternatively, a bonding layer may be formed on the surface of the first component 110 using a conventional semiconductor process, as needed. This bonding layer is a metal film such as an Au film, a polyimide (PI) film, an organic material film such as polybenzoxazole (PBO) or benzocyclobutene (BCB), or an insulator such as AlN, SiC, or diamond (step S1).

[0090] Next, the second component 210 is joined to the first component 110. In the second component 210, circuit elements and electrodes have been formed through other processes described later (step S2).

[0091] Next, a second component-side electrode 213 is formed on the second component 210 using a standard semiconductor process, and a first component-side electrode 113 is formed on the first component 110. Additionally, an inter-component connection conductor 351 is formed to electrically connect the first component 110 and the second component 210. Furthermore, if there are no issues with the manufacturing process, the second component-side electrode 213, the first component-side electrode 113, and the inter-component connection conductor 351 can be formed simultaneously (step S3).

[0092] Next, the resist film 119 is formed such that a first conductor protrusion 116 and a second conductor protrusion 216 should be formed (see reference). Figure 2 (A) and Figure 2 The region (B) has an opening. The first component side electrode 113 or the second component side electrode 213 is exposed from the opening in the resist film 119 (step S4).

[0093] Next, conductor pillars 114 and 214 are deposited on the first component-side electrode 113 and the second component-side electrode 213 exposed within the opening of the resist film 119 by electroplating. The conductor pillars 114 and 214 are formed of Cu, for example. The thickness of the conductor pillars 114 and 214 is, for example, 40 μm (step S5).

[0094] Next, solder layers 115 and 215 are deposited on the conductor pillars 114 and 214 deposited within the openings of the resist film 119 by electroplating. Solder layers 115 and 215 are formed, for example, of a SnAg alloy. The thickness of solder layers 115 and 215 is, for example, 30 μm. This forms a first conductor protrusion 116 and a second conductor protrusion 216 (step S6).

[0095] Next, the resist film 119 is removed, and finally, the solder layers 115 and 215 are melted by reflow and then cured (step S7). Thus, the PA circuit element 301 is completed (step S8).

[0096] Similar to the first conductor protrusion 116, the structure in which a conductor pillar 114 is formed with Cu in step S5 and a solder layer 115 is placed on the conductor pillar 114 in step S6 is called a "Cu pillar bump (CPB)". Alternatively, a component with a structure where no solder is placed on the upper surface, such as an Au bump, can be used as the first conductor protrusion 116. Such a protrusion is also called a "pillar". Another option is to use a component with a structure where conductor pillars are erected on the pads as the first conductor protrusion 116. Such a conductor protrusion is also called a "post". Additionally, a ball bump that allows solder to reflow into a spherical shape can be used as the first conductor protrusion 116. Besides these various structures, components with various structures including conductors protruding from the substrate can also be used as conductor protrusions. The second conductor protrusion 216 can also have the same configuration as the first conductor protrusion 116.

[0097] Figure 5 This diagram illustrates the manufacturing method of the second component 210 and the joining method between the second component 210 and the first component 110. Figure 5 A 3D view of each process is shown. Although actual manufacturing is carried out on a wafer-by-wafer basis, Figure 5 The image shows a single semiconductor device.

[0098] like Figure 5 As shown, firstly, a release layer 212 is formed on the mother substrate 211, which serves as a compound semiconductor component. A semiconductor thin film is then formed on the z-axis side of the release layer 212 using an epitaxial growth method. Next, a plurality of circuit elements and electrodes connected to these circuit elements are formed on the semiconductor thin film. This portion becomes the second component 210 (step S11).

[0099] Next, the second component 210 (semiconductor thin film) is peeled off from the mother substrate 211 by selectively etching the release layer 212 (step S12).

[0100] Next, the second component 210 is bonded to the first component 110. In other words, the semiconductor thin film is transferred from the mother substrate 211 to the first component 110 and fixed thereon. In this embodiment, the first component 110 and the second component 210 are bonded by van der Waals bonds or hydrogen bonds (step S13).

[0101] Alternatively, the first component 110 and the second component 210 can be bonded by electrostatic force, covalent bonding, or eutectic alloy bonding. Alternatively, the first component 110 and the second component 210 can be bonded by eutecticizing an Au film. Specifically, an Au film is formed as a bonding layer on the first component 110 using other processes. By pressing the second component 210 against the surface of the bonding layer, the Au in the bonding layer diffuses into the GaAs layer of the second component, and Au and GaAs eutecticize. Thus, the first component 110 and the second component 210 are bonded.

[0102] The formation of circuit elements and electrodes on the second component 210 can be performed not only in the stage shown in step S11, as shown in step S14, but also after the second component 210 is bonded to the first component 110, through a process (photolithography and etching process) on the second component 210.

[0103] Hereinafter, the wiring formed after the second component 210 and the first component 110 are joined will sometimes be referred to as rewiring. Furthermore, some rewiring includes wiring that electrically connects the first circuit in the first component 110 and the second circuit in the second component 210 without passing through the module substrate 310. Such rewiring is one method of connecting the inter-component conductor 351.

[0104] The methods for peeling and transferring the aforementioned semiconductor thin film can be applied, for example, by the following methods. That is, in Figure 5 In step S11, the support body is attached to the z-axis side of the formed second component 210. Then, as... Figure 5 As shown in step S12, when the second component 210 (semiconductor thin film) is peeled off from the mother substrate 211, the second component 210 is peeled off from the mother substrate 211 while the second component 210 is supported by the support body. Additionally, as... Figure 5 As shown in step S13, the second component 210 is joined to the first component 110 while the second component 210 is supported by the aforementioned support body. After the second component 210 is joined to the first component 110, the support body is peeled off from the second component 210. Figure 5 In steps S11 to S13, the illustration of the support body is omitted for the convenience of clearly showing the second component 210.

[0105] The RF circuit module 300 configured in this embodiment has the following effect.

[0106] (a) The first component 110 is flip-chip soldered (inverted) onto the module substrate 310, so there is no need to configure the pads for wire bonding and the space for the wires, thus reducing the overall size of the RF circuit module 300.

[0107] (b) The first component 110 has a first conductor protrusion 116 connected to the substrate-side electrode 311 of the module substrate 310, and the second component 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310. The first circuit formed in the first component 110 and the second circuit formed in the second component 210 are respectively electrically connected to the module substrate 310. Furthermore, the first circuit and the second circuit are electrically connected via an inter-component connection conductor 351 without passing through the module substrate 310, thus eliminating the need to form wiring on the module substrate 310 for connecting the first circuit and the second circuit. This allows for a reduction in the overall size of the RF circuit module 300.

[0108] (c) It can efficiently dissipate heat and waste heat generated by amplifiers and the like in the second circuit formed in the second component 210, so it can realize an RF circuit module 300 that is not limited by heat dissipation, or an RF circuit module 300 that is small and has high heat dissipation.

[0109] [Power Amplifier Circuit]

[0110] The power amplifier circuit of the first embodiment will be described.

[0111] Figure 6 This is the circuit diagram of power amplifier circuit 61. (For example...) Figure 6 As shown, the power amplifier circuit 61 includes a first circuit 400, a second circuit 500, and an inter-component connection conductor 351a. The first circuit 400 includes a base bias circuit 401. The base bias circuit 401 includes a first bias transistor 421n, a second bias transistor 421p, capacitors 426n and 426p, a first application circuit 431n, and a second application circuit 431p. The second circuit 500 includes an amplifying transistor 501, a resistive element 502, an inductor 503, and a capacitor 504.

[0112] The power amplifier circuit 61 is a circuit that amplifies the input signal RFin (RF signal) input from the input terminal 31 and outputs the output signal RFout from the output terminal 32.

[0113] In this embodiment, the first bias transistor 421n, the second bias transistor 421p, and the amplification transistor 501 are described as examples of bipolar transistors such as HBTs. However, these transistors can also be constructed from other transistors such as MOSFETs (Metal-oxide-semiconductor Field-Effect Transistors). In this case, the base, collector, and emitter can be replaced with the gate, drain, and source, respectively.

[0114] The amplifying transistor 501 has a base to which the input signal RFin is supplied, amplifies the input signal RFin, and outputs it. Specifically, at the base of the amplifying transistor 501, it is biased from the base bias circuit 401 through the inter-component connecting conductor 351a and the resistor element 502, and the input signal RFin is supplied from the input terminal 31 through the capacitor 504.

[0115] More specifically, resistor 502 has a first end and a second end electrically connected to the Bout terminal 425 of base bias circuit 401 via inter-component connecting conductor 351a. Capacitor 504 has a first end and a second end connected to input terminal 31. Amplifying transistor 501 has a base electrically connected to the second end of resistor 502 and the second end of capacitor 504, a collector connected to the terminal supplying power supply voltage Vcc via inductor 503 and connected to output terminal 32, and a grounded emitter. Amplifying transistor 501 amplifies the input signal RFin supplied from input terminal 31 via capacitor 504 and outputs the amplified output signal RFout to output terminal 32.

[0116] Furthermore, although the configuration of the power amplifier circuit 61 comprising a single unit consisting of an amplifying transistor 501, a resistive element 502, and a capacitor 504 has been described, it is not limited to this. The power amplifier circuit 61 may also be configured to include multiple unit units connected in parallel.

[0117] Furthermore, although the configuration of inductor 503 included in the second circuit 500 has been described, it is not limited thereto. Inductor 503 may also be configured to be formed by wiring patterns in the module substrate 310. In addition, inductor 503 may also be configured to be mounted on the power amplifier circuit 61 via SMD (Surface Mount Device).

[0118] The base bias circuit 401 generates a bias to be supplied to the base of the amplifying transistor 501 and outputs the generated bias to the Bout terminal 425. Specifically, a first bias voltage VB1 is supplied to the bias input terminal 33n of the base bias circuit 401, which is applied to the first bias transistor 421n. A second bias voltage VB2 is supplied to the bias input terminal 33p, which is applied to the second bias transistor 421p.

[0119] Capacitor 426n has a first terminal connected to bias input terminal 33n and a second terminal connected to terminal Tn. Capacitor 426p has a first terminal connected to bias input terminal 33p and a second terminal connected to terminal Tp. Terminals Tn and Tp are respectively connected to ground or supplied with battery voltage Vbat.

[0120] The first application circuit 431n has a positive terminal 432np connected to the terminal Tbat (power supply) that supplies the battery voltage Vbat, and a negative terminal 432nm connected to the collector of the first bias transistor 421n.

[0121] The second application circuit 431p has a positive terminal 432pp connected to the collector of the second bias transistor 421p and a grounded negative terminal 432pm.

[0122] For example, when the second circuit 500 is formed using a semiconductor primarily composed of GaAs, the threshold voltage (hereinafter sometimes referred to as the turn-on voltage) for the amplifying transistor 501 to turn on is approximately 1.4 volts. Additionally, when the first circuit 400 is formed using a semiconductor primarily composed of Si, the turn-on voltages of the first bias transistor 421n and the second bias transistor 421p are approximately 0.7 volts.

[0123] Therefore, it is preferable that the voltage at the negative terminal 432nm of the first application circuit 431n relative to the ground wire is greater than 2.1 volts, which is the sum of the turn-on voltage of the amplifier transistor 501 and the turn-on voltage of the first bias transistor 421n.

[0124] In addition, it is preferable that the voltage of the positive terminal 432pp of the second application circuit 431p relative to the ground wire is greater than 0.7 volts, which is the result of subtracting the turn-on voltage of the second bias transistor 421p from the turn-on voltage of the amplifying transistor 501.

[0125] The first application circuit 431n applies a first voltage V1 to the collector of the first bias transistor 421n, which is lower than the battery voltage Vbat and higher than the voltage obtained by adding the turn-on voltage of the amplifying transistor 501 to the turn-on voltage of the first bias transistor 421n. Details of the first application circuit 431n will be described later.

[0126] The second application circuit 431p applies a second voltage V2 to the collector of the second bias transistor 421p, which is higher than ground and higher than the voltage obtained by subtracting the turn-on voltage of the second bias transistor 421p from the turn-on voltage of the amplifying transistor 501. Details of the second application circuit 431p will be described later.

[0127] The first bias transistor 421n is an NPN type transistor, having a collector, a base electrically connected to the bias input terminal 33n, and an emitter electrically connected to the Bout terminal 425, which supplies bias current to the base of the amplifying transistor 501 through the Bout terminal 425 and the resistor element 502. A first voltage V1 is applied to the collector through the first application circuit 431n. A first bias voltage VB1 for controlling the current flowing from the collector to the emitter is applied to the base.

[0128] The second bias transistor 421p is a PNP type transistor, having an emitter electrically connected to the emitter of the first bias transistor 421n and the Bout terminal 425, a base electrically connected to the bias input terminal 33p, and a collector. A second voltage V2, lower than the first voltage V1, is applied to the collector through the second application circuit 431p. A second bias voltage VB2, used to control the current flowing from the emitter to the collector, is applied to the base.

[0129] Furthermore, although the configuration of the power amplifier circuit 61 including one amplifying transistor 501 has been described, it is not limited to this. The power amplifier circuit 61 may also be configured to include multiple amplifying transistors 501. Specifically, for example, it may be configured as an amplifier with a primary stage provided between the input terminal 31 and the amplifying transistor 501.

[0130] A first example of the first application circuit 431n and the second application circuit 431p will be described.

[0131] Figure 7 This is a circuit diagram of a first example of the first application circuit 431n and the second application circuit 431p. (See diagram for example.) Figure 7 As shown, a first example of the first application circuit 431n and the second application circuit 431p (hereinafter, sometimes referred to as the first application circuit 431na and the second application circuit 431pa, respectively) includes a resistive element 433.

[0132] Resistive element 433 has a first terminal and a second terminal. When resistive element 433 is included in the first application circuit 431na, the first terminal and the second terminal of resistive element 433 are electrically connected to the positive terminal 432np and the negative terminal 432nm, respectively. On the other hand, when resistive element 433 is included in the second application circuit 431pa, the first terminal and the second terminal of resistive element 433 are electrically connected to the positive terminal 432pp and the negative terminal 432pm, respectively.

[0133] For example, when current flows from terminal Tbat through resistor 433 in the first application circuit 431na, first bias transistor 421n, second bias transistor 421p, and resistor 433 in the second application circuit 431pa to ground, the potential difference between the positive terminal 432np and the negative terminal 432nm in the first application circuit 431na (hereinafter sometimes referred to as the first drop voltage) becomes the voltage obtained by multiplying the current by the resistance value of resistor 433. In other words, the potential of the negative terminal 432nm relative to ground, i.e., the first voltage V1, becomes the voltage obtained by subtracting the first drop voltage from the battery voltage Vbat.

[0134] Furthermore, the potential difference between the positive terminal 432pp and the negative terminal 432pm in the second application circuit 431pa (hereinafter sometimes referred to as the second drop voltage) becomes the voltage obtained by multiplying the aforementioned current by the resistance value of the resistive element 433. In other words, the potential of the positive terminal 432pp relative to the ground wire, i.e., the second voltage V2, becomes the voltage obtained by adding the second drop voltage to zero volts relative to the ground wire.

[0135] A second example of the first application circuit 431n and the second application circuit 431p will be described.

[0136] Figure 8 This is a circuit diagram of a second example of the first application circuit 431n and the second application circuit 431p. (See diagram for example.) Figure 8 As shown, a second example of the first application circuit 431n and the second application circuit 431p (hereinafter, sometimes referred to as the first application circuit 431nb and the second application circuit 431pb, respectively) includes an npn-type transistor 434.

[0137] Transistor 434 has a collector, a base connected to the collector, and an emitter. Hereinafter, the connection between the collector and base of the transistor is sometimes referred to as a diode connection. When transistor 434 is included in the first application circuit 431nb, the collector and emitter of transistor 434 are electrically connected to the positive terminal 432np and the negative terminal 432nm, respectively. Conversely, when transistor 434 is included in the second application circuit 431pb, the collector and emitter of transistor 434 are electrically connected to the positive terminal 432pp and the negative terminal 432pm, respectively.

[0138] When current flows from the collector to the emitter of transistor 434, which is connected to a diode, transistor 434 operates as a diode. Therefore, the first drop voltage becomes the difference between the potential of the base and the emitter of transistor 434, i.e., the base-emitter voltage Vbe. In other words, the potential of the negative terminal 432nm of the ground wire, i.e., the first voltage V1, is the voltage obtained by subtracting the base-emitter voltage Vbe from the battery voltage Vbat.

[0139] In addition, the second drop voltage in the second application circuit 431pb also becomes the base-emitter voltage Vbe, so the potential of the positive terminal 432pp of the ground wire, i.e., the second voltage V2, becomes the voltage of zero volts relative to the ground wire plus the base-emitter voltage Vbe.

[0140] A third example of the first application circuit 431n and the second application circuit 431p will be described.

[0141] Figure 9 This is a circuit diagram of a third example of the first application circuit 431n and the second application circuit 431p. (See diagram for example.) Figure 9 As shown, a third example of the first application circuit 431n and the second application circuit 431p (hereinafter, sometimes referred to as the first application circuit 431nc and the second application circuit 431pc, respectively) includes a pnp type transistor 435.

[0142] Transistor 435 is connected in a diode configuration. When transistor 435 is included in the first application circuit 431nc, the emitter and collector of transistor 435 are electrically connected to the positive terminal 432np and the negative terminal 432nm, respectively. On the other hand, when transistor 435 is included in the second application circuit 431pc, the emitter and collector of transistor 435 are electrically connected to the positive terminal 432pp and the negative terminal 432pm, respectively.

[0143] When current flows from the emitter to the collector of the diode-connected transistor 435, the transistor 435 operates as a diode. Therefore, the first drop voltage becomes the difference between the potential of the emitter and the base of the transistor 435, i.e., the base-emitter voltage Vbe. In other words, the potential of the negative terminal 432nm of the ground wire, i.e., the first voltage V1, is the voltage obtained by subtracting the base-emitter voltage Vbe from the battery voltage Vbat.

[0144] In addition, the second drop voltage in the second application circuit 431pc also becomes the base-emitter voltage Vbe, so the potential of the positive terminal 432pp relative to the ground wire, i.e., the second voltage V2, becomes the voltage of zero volts relative to the ground wire plus the base-emitter voltage Vbe.

[0145] [Effects]

[0146] like Figure 6 As shown, the base of the first bias transistor 421n is connected to terminal Tn via capacitor 426n. Therefore, when the first bias transistor 421n is in the on state, the impedance of the RF signal in the frequency band along the path from terminal Bout 425 to terminal Tn becomes lower. In other words, for the RF signal, terminal Bout 425 can be considered to be grounded through the first bias transistor 421n and capacitor 426n.

[0147] Similarly, the base of the second bias transistor 421p is connected to terminal Tp through capacitor 426p. Therefore, when the second bias transistor 421p is in the on state, the impedance of the RF signal in the frequency band along the path from terminal Bout 425 to terminal Tp becomes lower. In other words, for the RF signal, terminal Bout 425 can be considered to be grounded through the second bias transistor 421p and capacitor 426p.

[0148] Figure 10 This is a graph showing an example of the time-varying base bias current Ieef in power amplifier circuit 61. Furthermore, in Figure 10 In the diagram, the vertical axis represents the instantaneous value of the base bias current Ieef, and the horizontal axis represents time. For example... Figure 6 as well as Figure 10 As shown, if a first bias voltage VB1 and a second bias voltage VB2 are supplied to the base of the first bias transistor 421n and the base of the second bias transistor 421p respectively, the first bias transistor 421n, the second bias transistor 421p and the amplifying transistor 501 become in the conducting state.

[0149] In this case, the base bias current Ieef flowing from the Bout terminal 425 to the resistor element 502 becomes, for example, the current after the DC current overlaps with the AC RF current. Specifically, for example, if the RF current varies over time along a small-amplitude sine curve, the base bias current Ieef becomes a base bias current I41 with a waveform that is a sine curve shifted to the positive side (see reference). Figure 10 ).

[0150] When the instantaneous value of the current, such as the base bias current I41, is above zero, it is not subject to the rectification effect between the base and emitter in the first bias transistor 421n, so the base bias circuit 401 will not be in the cutoff state.

[0151] However, in the base bias circuit 401, the direction from the emitter of the second bias transistor 421p to the base is positive, so the instantaneous value of the base bias current Ieef flowing from the Bout terminal 425 to the terminal Tp is less than zero. Thus, for example, when the RF current varies over time along a sine curve with a large amplitude, the base bias current Ieef becomes a base bias current I42 with an instantaneous value less than zero.

[0152] In other words, in the previous high-frequency amplifier circuit 901 (refer to...) Figure 56 In the case of base bias current I942, the current that should flow under negative conditions becomes zero amperes, and the high-frequency amplifier circuit 901 becomes cut off, but the base bias circuit 401 does not become cut off.

[0153] In the power amplifier circuit 61, a negative current flows when it should flow, so the DC current DC42 that is time-averaged for the base bias current I42 is approximately the same as the DC current DC41 that is time-averaged for the base bias current I41.

[0154] That is, even if the amplitude of the RF current increases, the time-averaged change of the base bias current Ieef can be suppressed, thus suppressing the change in the operating point of the amplifying transistor 501. Therefore, regardless of the magnitude of the RF current amplitude, the change in the amplification rate of the amplifying transistor 501 can be suppressed, so a good linear relationship between input and output can be achieved in the power amplifier circuit 61.

[0155] [layout]

[0156] Figure 11 This is a diagram showing an example of a cross-section of the power amplifier device 11. (See diagram for example.) Figure 11 As shown, the first component 110 includes a Si substrate 121, a first insulating film 122, a second insulating film 123 and a third insulating film 124, which are stacked sequentially toward the z-axis.

[0157] An amplifying transistor 501 is formed in the second component 210. An interlayer insulating film 224 is disposed on the z-axis side of the amplifying transistor 501. In detail, the amplifying transistor 501 includes a collector layer 221C, a base layer 221B, and an emitter layer 221E sequentially stacked from the substrate 121 side.

[0158] More specifically, the collector layer 221C is bonded to the z-axis side of the first component 110. A base layer 221B, a collector electrode 222C connected to the collector layer 221C, and a thin film resistor (TFR) 134 serving as a resistive element 502 are disposed on the z-axis side of the collector layer 221C. An emitter layer 221E and a base electrode 222B connected to the base layer 221B are disposed on the z-axis side of the base layer 221B. An emitter electrode 222E connected to the emitter layer 221E is disposed on the z-axis side of the emitter layer 221E. An emitter wiring 223E is disposed on the z-axis side of the emitter electrode 222E. For example, in the case where an amplifying transistor 501 is composed of multiple transistor elements arranged in the y-axis direction, the emitter wiring 223E electrically connects the emitter electrodes 222E of these multiple transistor elements.

[0159] The collector layer 221C, base layer 221B, and emitter layer 221E are formed, for example, of n-type GaAs, p-type GaAs, and n-type InGaP, respectively. Alternatively, these semiconductor layers can also be formed of other compound semiconductors such as InP, GaN, SiGe, and SiC.

[0160] A first insulating film 225 is provided on the z-axis side of the third insulating film 124 to cover the interlayer insulating film 224. An opening is formed in both the interlayer insulating film 224 and the first insulating film 225, leading from the z-axis side to the emitter wiring 223E. An emitter pad 213a is electrically connected to the emitter wiring 223E through this opening. The emitter pad 213a protrudes from the first insulating film 225 towards the z-axis side. The emitter pad 213a serves as a second component-side electrode 213 and is also a rewiring method.

[0161] A second insulating film 226 is provided on the z-axis side of the first insulating film 225. An opening in the second insulating film 226 extends from the z-axis side to the emitter pad 213a. A second conductor protrusion 216 connects to the emitter pad 213a through this opening. The second conductor protrusion 216 protrudes from the second insulating film 226 toward the z-axis side.

[0162] The heat generated by the amplification operation of the amplifying transistor 501 is dissipated to the module substrate 310 (not shown) through the emitter pad 213a and the second conductor protrusion 216, and also to the first component 110.

[0163] The base electrode 222B and the y-axis side end of TFR134, i.e., the second end of the resistive element 502, are electrically connected via a second component inner conductor 232a formed in the interlayer insulating film 224. The second component inner conductor 232a is, for example, composed of an electrode and a through-hole.

[0164] In the first component 110, a first bias transistor 421n and a second bias transistor 421p are formed on the substrate 121. Specifically, the first bias transistor 421n includes an emitter layer 141nE, a collector layer 141nC, and a base layer 141nB. The second bias transistor 421p includes an emitter layer 141pE, a collector layer 141pC, and a base layer 141pB.

[0165] Furthermore, NMOS 151n and PMOS 151p are also formed on substrate 121. NMOS 151n and PMOS 151p are not included in... Figure 6 The power amplifier circuit 61 shown can be used, for example, as a switch. Alternatively, the NMOS 151n or PMOS 151p can be configured to use the first bias transistor 421n or the second bias transistor 421p.

[0166] The emitter layer 141nE of the first bias transistor 421n and the emitter layer 141pE of the second bias transistor 421p are electrically connected via the inner conductor 132a of the first component. For example, the inner conductor 132a is formed by electrodes and vias disposed on the first insulating film 122, the second insulating film 123, the third insulating film 124, and the first insulating film 225. The electrode on the z-axis side of the inner conductor 132a is, for example, the Bout terminal 425 disposed on the z-axis side of the third insulating film 124.

[0167] Inter-component connecting conductor 351a connects the Bout terminal 425 of the first component inner conductor 132a to the second component inner conductor 232b, which is connected to the y-axis + side end of TFR134, i.e., the first end of the resistor element 502. Inter-component connecting conductor 351a is formed on the first insulating film 225 and the second insulating film 226.

[0168] The collector layer 141nC of the first bias transistor 421n is connected to the MIM (Metal-Insulator-Metal) 135, which functions as a capacitor, through the first component inner conductor 132b.

[0169] The collector layer 141pC of the second bias transistor 421p is connected, for example, to the inner conductor 132c of the first component having an electrode 132ca disposed on the z-axis side of the third insulating film 124.

[0170] For example, a first conductor protrusion 116 is provided on the y-axis+ side of the second conductor protrusion 216. The first conductor protrusion 116 is connected to the electrode 132ca of the inner conductor 132c of the first component via a first component-side electrode 113. The first component-side electrode 113 is a rewiring method.

[0171] In detail, the first component-side electrode 113 is connected to the electrode 132ca through an opening in the first insulating film 225. The first conductor protrusion 116 is connected to the first component-side electrode 113 through an opening in the second insulating film 226.

[0172] [Second Implementation]

[0173] The power amplification device and power amplification circuit of the second embodiment will be described. Descriptions of items identical to those in the first embodiment will be omitted in the second embodiment and thereafter; only the differences will be described. In particular, the same effects resulting from the same configuration will not be mentioned sequentially in each embodiment.

[0174] Figure 12 This is a diagram showing an example of a cross-section of the power amplifier 11a. (See diagram below.) Figure 12 As shown, in the power amplifier device 11a of the second embodiment, the first circuit 400, the second circuit 500, and the module substrate 310 are electrically connected by wire bonding, and the second circuit 500 and the module substrate 310 are electrically connected by through-holes, which is different from the power amplifier device 11 of the first embodiment.

[0175] Specifically, bonding wire 352a electrically connects the emitter of the first bias transistor 421n and the emitter of the second bias transistor 421p in the first circuit 400 to the first terminal of the resistor element 502 in the second circuit 500. Bonding wire 352a is a method of connecting conductors between components.

[0176] More specifically, bonding wire 352a electrically connects the second component pad 232ba disposed on the second component 210 and the first component pad 132aa disposed on the first component 110. The second component pad 232ba is connected to the end of the TFR134 on the y-axis + side, i.e., the first end of the resistor element 502, through the inner conductor 232b of the second component. The first component pad 132aa is connected to the emitter layer 141nE of the first bias transistor 421n and the emitter layer 141pE of the second bias transistor 421p through the inner conductor 132a of the first component.

[0177] Bonding wires 352b and 352c electrically connect the first circuit 400 to the module substrate 310, respectively. Specifically, bonding wire 352b electrically connects the first component pad 132cb disposed on the first component 110 to the substrate terminal 332aa disposed on the module substrate 310. The first component pad 132cb is connected to the collector layer 141pC of the second bias transistor 421p through the inner conductor 132c of the first component.

[0178] The bonding wire 352c electrically connects the first component pad 132ba disposed on the first component 110 to the substrate terminal 332ba disposed on the module substrate 310. The first component pad 132ba is connected to the collector layer 141nC of the second bias transistor 421p and the MIM 135, etc., through the inner conductor 132b of the first component.

[0179] A through-hole 232c is disposed in the second component 210, electrically connecting the second circuit 500 to the module substrate 310. Specifically, the z-axis + side of the through-hole 232c is connected to the emitter wiring 223E through the inner conductor 232d of the second component. The z-axis - side of the through-hole 232c is connected to the module substrate 310.

[0180] Furthermore, although the configuration in the power amplifier device 11a in which the first circuit 400 in the first component 110 and the second circuit 500 in the second component 210 are electrically connected by wire bonding has been described, it is not limited to this configuration. The first circuit 400 and the second circuit 500 may also be electrically connected by other connecting conductors such as bumps.

[0181] also, Figure 12 For illustrative purposes only, although the second component 210 is thicker than the first component 110, the second component 210 is thinner than the first component 110.

[0182] [Third Implementation Method]

[0183] The power amplification device and power amplification circuit of the third embodiment will be described.

[0184] Figure 13 This is the circuit diagram of power amplifier circuit 62. (For example...) Figure 13 As shown, the power amplifier circuit 62 of the third embodiment differs from the power amplifier circuit 61 of the first embodiment in that it adjusts the first bias voltage VB1 and the second bias voltage VB2 according to the temperature.

[0185] Power amplifier circuit 62 and Figure 6 Compared to the power amplifier circuit 61 shown, the base bias circuit 402 is included instead of the base bias circuit 401. The base bias circuit 402 is... Figure 6 Compared to the base bias circuit 401 shown, it also includes a reference circuit 441.

[0186] The reference circuit 441 has a control terminal 445a connected to the control signal input terminal 34, a bias supply terminal 445n connected to the base of the first bias transistor 421n, and a bias supply terminal 445p connected to the base of the second bias transistor 421p.

[0187] A first example of the reference circuit 441 of the third embodiment will be described.

[0188] Figure 14 This is the circuit diagram of the first example of reference circuit 441. For example... Figure 14 As shown, the first example of reference circuit 441 (hereinafter, sometimes referred to as reference circuit 441a) includes npn type transistors 451n (first diode) and 452n, pnp type transistors 451p (second diode) and 452p, and resistors 453n and 453p. Transistor 452p and resistor 453p constitute a third application circuit 455.

[0189] Resistive element 453n has a first terminal and a second terminal connected to control terminal 445a. Resistive element 453p has a first terminal and a second terminal grounded.

[0190] Transistors 451n, 451p, 452n, and 452p are each connected as diodes. That is, transistors 451n, 451p, 452n, and 452p function as diodes. Furthermore, in transistors 451n and 452n, the collector and base act as anodes, and the emitter acts as cathodes. Similarly, in transistors 451p and 452p, the emitter acts as anode, and the collector and base act as cathodes.

[0191] Transistors 451n and 451p have approximately the same characteristics as the first bias transistor 421n and the second bias transistor 421p, respectively. This characteristic is, for example, the temperature variation of the turn-on voltage.

[0192] Transistor 452n has a collector, a base, and an emitter connected to the second terminal of resistive element 453n. Transistor 451n has a collector, a base, and an emitter connected to the emitter of transistor 452n and bias supply terminal 445n.

[0193] Transistor 451p has an emitter connected to the emitter of transistor 451n, and a collector and a base connected to the bias supply terminal 445p. Transistor 452p has an emitter connected to the collector and base of transistor 451p, and a collector and a base connected to the first end of resistor element 453p.

[0194] A control signal CTRL is supplied to the control terminal 445a to control the current flowing from the emitter of transistor 451n to the emitter of transistor 451p. A third application circuit 455 is provided between the ground line and the collector and base of transistor 451p, and applies a second bias voltage VB2, which is higher than the ground line, to the collector and base of transistor 451p.

[0195] Specifically, in reference circuit 441a, current is supplied to control terminal 445a as a control signal CTRL. Therefore, the potential of the base of transistor 451p relative to ground, i.e., the second bias voltage VB2, is the voltage between the first and second terminals of resistor 453p and the base-emitter voltage Vbe of transistor 452p. Furthermore, the potential of the base of transistor 451n relative to ground, i.e., the first bias voltage VB1, is the voltage obtained by adding the base-emitter voltage Vbe of transistor 451p and the base-emitter voltage Vbe of transistor 451n to the second bias voltage VB2.

[0196] The voltage between the first and second terminals of the resistor element 453p and the base-emitter voltage Vbe of transistors 452p, 451p, and 451n can be adjusted by controlling the magnitude of the current in the control signal CTRL. In other words, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by controlling the magnitude of the current in the control signal CTRL.

[0197] Alternatively, a voltage can be applied to the control terminal 445a as a control signal CTRL. In this case, the first bias voltage VB1 and the second bias voltage VB2 can also be adjusted by the voltage applied to the control terminal 445a.

[0198] Generally, if the temperature of a transistor increases, its on-state voltage decreases. For example, suppose the base bias circuit 401 supplies a constant bias to the amplifying transistor 501 regardless of temperature. In this case, as the temperature of the power amplifier 11 rises, the on-state voltage of the amplifying transistor 501 decreases, and the current flowing between the collector and emitter of the amplifying transistor 501 increases. Due to this increased current, and the rising temperature of the amplifying transistor 501, its on-state voltage further decreases, thus further increasing the current flowing between the collector and emitter of the amplifying transistor 501. In other words, there is a possibility of thermal runaway of the amplifying transistor 501.

[0199] In contrast, in the reference circuit 441a, when the temperature of each transistor included in the reference circuit 441a rises due to the temperature rise of the power amplifier device 11, the decrease in the on-state voltage of transistors 452p, 451p, and 451n results in a decrease in the base-emitter voltage Vbe. That is, if the temperature of the power amplifier device 11 rises, the first bias voltage VB1 and the second bias voltage VB2 can be reduced. As a result, the bias voltage supplied to the amplifying transistor 501 by the first bias transistor 421n and the second bias transistor 421p can be reduced, thus suppressing the increase in the current flowing between the collector and emitter of the amplifying transistor 501, i.e., suppressing thermal runaway of the amplifying transistor 501.

[0200] A second example of the reference circuit 441 of the third embodiment will be described.

[0201] Figure 15 This is the circuit diagram for the second example of reference circuit 441. For example... Figure 15 As shown, the second example of reference circuit 441 (hereinafter, sometimes referred to as reference circuit 441b) is... Figure 14 Compared to the reference circuit 441a shown, the connection destination of the control terminal 445a is different.

[0202] The differences from reference circuit 441a will be explained below. The first terminal of resistor 453n is connected to the terminal supplying the battery voltage Vbat. Transistor 452n is configured without a diode connection, having a collector connected to the second terminal of resistor 453n, a base connected to control terminal 445a, and an emitter connected to the collector and base of transistor 451n.

[0203] In the reference circuit 441b, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current or voltage of the control signal CTRL.

[0204] A third example of the reference circuit 441 of the third embodiment will be described.

[0205] Figure 16 This is the circuit diagram for the third example of reference circuit 441. For example... Figure 16 As shown, the third example of reference circuit 441 (hereinafter, sometimes referred to as reference circuit 441c) is... Figure 14 Compared to the reference circuit 441a shown, the connection destination of the control terminal 445a is different.

[0206] The differences from reference circuit 441a will be explained below. The first terminal of resistor 453n is connected to the terminal supplying the battery voltage Vbat. Transistor 452p is configured without diode connection, having an emitter connected to the collector and base of transistor 451p, a base connected to control terminal 445a, and a collector connected to the first terminal of resistor 453p.

[0207] In the reference circuit 441c, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current or voltage of the control signal CTRL.

[0208] A fourth example of the reference circuit 441 of the third embodiment will be described.

[0209] Figure 17 This is the circuit diagram for the fourth example of reference circuit 441. For example... Figure 17 As shown, the fourth example of reference circuit 441 (hereinafter, sometimes referred to as reference circuit 441d) is... Figure 14 Compared to the reference circuit 441a shown, transistors 451n and 452n are Darlington connected, and transistors 451p and 452p are Darlington connected.

[0210] The differences from reference circuit 441a are described below. Transistors 451n and 451p are not diode-connected. Transistor 452n has a collector and a base connected to the second terminal of resistor 453n, and an emitter connected to bias supply terminal 445n. Transistor 451n has a collector connected to the second terminal of resistor 453n, a base connected to bias supply terminal 445n, and an emitter.

[0211] Transistor 451p has an emitter connected to the emitter of transistor 451n, a base connected to the bias supply terminal 445p, and a collector connected to the first end of resistor element 453p. Transistor 452p has an emitter connected to the bias supply terminal 445p, and a collector and base connected to the first end of resistor element 453p.

[0212] The base and emitter of transistor 451n correspond to the first diode. In this case, the base and emitter of transistor 451n correspond to the anode and cathode of the first diode, respectively. The emitter and base of transistor 451p correspond to the second diode. In this case, the emitter and base of transistor 451p correspond to the anode and cathode of the second diode, respectively.

[0213] In reference circuit 441d, current is supplied to control terminal 445a as control signal CTRL. Therefore, the potential of the base of transistor 451p relative to ground, i.e., the second bias voltage VB2, is the voltage between the first and second terminals of resistor 453p and the base-emitter voltage Vbe of transistor 452p. Furthermore, the potential of the base of transistor 451n relative to ground, i.e., the first bias voltage VB1, is the voltage obtained by adding the base-emitter voltage Vbe of transistor 451p and the base-emitter voltage Vbe of transistor 451n to the second bias voltage VB2.

[0214] The voltage between the first and second terminals of the resistor element 453p and the base-emitter voltage Vbe of transistors 452p, 451p, and 451n can be adjusted by controlling the magnitude of the current in the control signal CTRL. In other words, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by controlling the magnitude of the current in the control signal CTRL.

[0215] Alternatively, a voltage can be applied to the control terminal 445a as a control signal CTRL. In this case, the first bias voltage VB1 and the second bias voltage VB2 can also be adjusted by the voltage applied to the control terminal 445a.

[0216] A fifth example of the reference circuit 441 of the third embodiment will be described.

[0217] Figure 18 This is the circuit diagram for the fifth example of reference circuit 441. For example... Figure 18 As shown, the fifth example of reference circuit 441 (hereinafter, sometimes referred to as reference circuit 441e) is... Figure 17 Compared to the reference circuit 441d shown, the connection destination of the control terminal 445a is different.

[0218] The differences from reference circuit 441d will be explained below. The first terminal of resistor 453n is connected to the terminal supplying the battery voltage Vbat. Transistor 452n is configured without a diode connection, having a collector connected to the second terminal of resistor 453n, a base connected to control terminal 445a, and an emitter connected to bias supply terminal 445n.

[0219] In the reference circuit 441e, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current or voltage of the control signal CTRL.

[0220] A sixth example of the reference circuit 441 of the third embodiment will be described.

[0221] Figure 19 This is the circuit diagram for the sixth example of reference circuit 441. For example... Figure 19 As shown, the sixth example of reference circuit 441 (hereinafter, sometimes referred to as reference circuit 441f) and... Figure 17 Compared to the reference circuit 441d shown, the connection destination of the control terminal 445a is different.

[0222] The differences from reference circuit 441d will be explained below. The first terminal of resistor 453n is connected to the terminal supplying the battery voltage Vbat. Transistor 452p is configured without diode connection, and has an emitter connected to bias supply terminal 445p, a base connected to control terminal 445a, and a collector connected to the first terminal of resistor 453p.

[0223] In the reference circuit 441f, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current or voltage of the control signal CTRL.

[0224] [Fourth Implementation Method]

[0225] The power amplification device and power amplification circuit of the fourth embodiment will be described.

[0226] Figure 20 This is the circuit diagram of power amplifier circuit 63. (For example...) Figure 20 As shown, the power amplifier circuit 63 of the fourth embodiment differs from the power amplifier circuit 62 of the third embodiment in that it further adjusts the first bias voltage VB1 and the second bias voltage VB2 according to the temperature of the amplifying transistor 501.

[0227] Power amplifier circuit 63 and Figure 13 Compared to the power amplifier circuit 62 shown, the base bias circuit 402 is replaced by a base bias circuit 403, and also includes an inter-component connection conductor 351b and a replication circuit 511 (external circuit). The base bias circuit 403 and... Figure 13 Compared to the base bias circuit 402 shown, the reference circuit 442 is included instead of the reference circuit 441.

[0228] The reference circuit 442 has a control terminal 445a connected to the control signal input terminal 34, a bias supply terminal 445n connected to the base of the first bias transistor 421n, a bias supply terminal 445p connected to the base of the second bias transistor 421p, and a shunt terminal 445r.

[0229] The replication circuit 511 is included in the second circuit 500. The replication circuit 511 has an amplified signal terminal 512c connected to the output terminal 32, an RF signal terminal 512b connected to the input terminal 31, and a reference bias terminal 512a connected to the shunt terminal 445r in the reference circuit 442 via the inter-component connection conductor 351b.

[0230] A first example of the reference circuit 442 of the fourth embodiment will be described.

[0231] Figure 21 This is the circuit diagram for the first example of reference circuit 442. For example... Figure 21 As shown, the first example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442a) and... Figure 14 Compared to the reference circuit 441a shown, a shunt terminal 445r is further connected.

[0232] The differences from reference circuit 441a will be explained below. In reference circuit 442a, an intermediate node N1 is provided between the emitters of transistor 451n and transistor 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0233] In the reference circuit 442a, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current of the control signal CTRL.

[0234] Since transistors 451n and 451p have approximately the same characteristics as the first bias transistor 421n and the second bias transistor 421p, the potential of the shunt terminal 445r relative to ground (hereinafter, sometimes referred to as the reference voltage Vsns) is approximately the same as the potential of the Bout terminal 425 relative to ground.

[0235] A first example of the replication circuit 511 in the fourth embodiment will be described.

[0236] Figure 22 This is the circuit diagram of the first example of a replica circuit 511. (Example:) Figure 22As shown, the first example of the replication circuit 511 (hereinafter, sometimes referred to as replication circuit 511a) includes an npn-type seventh transistor 521.

[0237] The seventh transistor 521 is connected as a diode. That is, the seventh transistor 521 functions as a seventh diode. Moreover, the collector and base of the seventh transistor 521 are equivalent to the anode of the seventh diode, and the emitter of the seventh transistor 521 is equivalent to the cathode of the seventh diode.

[0238] The seventh transistor 521 has substantially the same characteristics as the amplifying transistor 501. In this embodiment, this characteristic is, for example, the temperature variation of the turn-on voltage. Furthermore, the seventh transistor 521 is thermally coupled to the amplifying transistor 501. Specifically, the seventh transistor 521 and the amplifying transistor 501 are connected via a good thermal conductor. Therefore, the temperature of the seventh transistor 521 follows the temperature of the amplifying transistor 501. In other words, the seventh transistor 521 has a temperature substantially the same as that of the amplifying transistor 501.

[0239] The seventh transistor 521 has a collector connected to a reference bias terminal 512a, a base, and a grounded emitter.

[0240] A reference voltage Vsns is applied to the base of the seventh transistor 521 from the reference circuit 442a, so a current flows between the base and emitter of the seventh transistor 521. For example, if the temperature of the amplifying transistor 501 rises, the temperature of the seventh transistor 521, which is thermally coupled to the amplifying transistor 501, also rises. In this case, the current flowing from the base to the emitter in the seventh transistor 521, i.e., the base current, increases.

[0241] like Figure 21 as well as Figure 22 As shown, if the base current in the seventh transistor 521 increases, the current shunt from the intermediate node N1 to the shunt terminal 445r in the reference circuit 442a (hereinafter sometimes referred to as the shunt current) increases. As a result, the current flowing from the intermediate node N1 to the ground line through transistors 451p, 452p, and resistor 453p decreases.

[0242] If the current decreases, the base-emitter voltage Vbe of transistor 452p and the voltage between the first and second terminals of resistor 453p decrease, thus reducing the second bias voltage VB2. In addition to the decrease in the second bias voltage VB2, the base-emitter voltage Vbe of transistor 451p also decreases, thus reducing the first bias voltage VB1.

[0243] like Figure 20As shown, if the first bias voltage VB1 and the second bias voltage VB2 decrease, the bias voltage supplied to the amplifying transistor 501 by the base bias circuit 403 decreases, thus reducing the current flowing between the collector and emitter of the amplifying transistor 501. This suppresses the temperature rise of the amplifying transistor 501, i.e., it suppresses thermal runaway of the amplifying transistor 501.

[0244] Conversely, if the temperature of the amplifying transistor 501 decreases and the base current in the seventh transistor 521 decreases, the bias voltage supplied to the amplifying transistor 501 by the base bias circuit 403 increases, thus increasing the current flowing between the collector and emitter of the amplifying transistor 501. This helps to suppress the temperature drop of the amplifying transistor 501.

[0245] That is, by configuring the temperature change of the seventh transistor 521 to be approximately the same as the temperature change of the amplifying transistor 501, and feeding back the current change based on the temperature change of the seventh transistor 521 to the reference circuit 442a, it is possible to supply a bias to the amplifying transistor 501 to suppress the temperature change of the amplifying transistor 501.

[0246] A second example of the replication circuit 511 in the fourth embodiment will be described.

[0247] Figure 23 This is the circuit diagram for the second example of replicating circuit 511. (Example:) Figure 23 As shown, the second example of the replication circuit 511 (hereinafter, sometimes referred to as replication circuit 511b) is... Figure 22 Compared to the replication circuit 511a shown, the seventh transistor 521 is configured to simulate the amplification operation of the amplifier transistor 501.

[0248] The replication circuit 511b includes a seventh transistor 521 (seventh diode), a resistor 522, and a capacitor 524. The resistor 522 has, for example, substantially the same electrical characteristics as the resistor 502. The resistor 522 has a first terminal and a second terminal connected to the reference bias terminal 512a.

[0249] Capacitor 524 has, for example, substantially the same electrical characteristics as capacitor 504. Capacitor 524 has a first terminal and a second terminal connected to RF signal terminal 512b.

[0250] The seventh transistor 521 has a collector connected to the amplified signal terminal 512c, a base connected to the second terminal of the resistor element 522 and the second terminal of the capacitor 524, and a grounded emitter. The base and emitter of the seventh transistor 521 are equivalent to a seventh diode. In this case, the base and emitter of the seventh transistor 521 are equivalent to the anode and cathode of the seventh diode, respectively.

[0251] The seventh transistor 521 performs amplification operations that are substantially the same as those of the amplifying transistor 501. Specifically, the collector of the seventh transistor 521 is connected to the collector of the amplifying transistor 501. The emitter of the seventh transistor 521 is grounded in the same way as the emitter of the amplifying transistor 501. The base of the seventh transistor 521 receives the same input signal RFin and bias as the base of the amplifying transistor 501. Specifically, the RF signal is supplied from the input terminal 31 to the base of the seventh transistor 521 through a capacitor 524 having substantially the same electrical characteristics as the capacitor 504. Furthermore, a reference voltage Vsns, substantially the same as the voltage at the Bout terminal 425, is applied to the first end of the resistive element 522, which has substantially the same electrical characteristics as the resistive element 502. Therefore, a DC bias, substantially the same as the DC bias applied to the base of the amplifying transistor 501, is applied to the base of the seventh transistor 521.

[0252] Therefore, the base current of the seventh transistor 521, i.e., the shunt current in the reference circuit 442, can be made approximately the same as the base current of the amplifying transistor 501. Consequently, changes in the base current of the amplifying transistor 501 can be appropriately reflected in the bias voltage supplied by the base bias circuit 403, thus providing the amplifying transistor 501 with a bias that effectively suppresses temperature changes.

[0253] A second example of the reference circuit 442 of the fourth embodiment will be described.

[0254] Figure 24 This is the circuit diagram for the second example of reference circuit 442. For example... Figure 24 As shown, the second example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442b) is... Figure 15 Compared to the reference circuit 441b shown, a shunt terminal 445r is further connected.

[0255] The differences from reference circuit 441b will be explained below. In reference circuit 442b, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0256] In the reference circuit 442b, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current of the control signal CTRL.

[0257] Furthermore, the changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current are similar to those in reference circuit 442a (reference circuit). Figure 21 The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current in the ) are the same.

[0258] A third example of the reference circuit 442 of the fourth embodiment will be described.

[0259] Figure 25 This is the circuit diagram for the third example of reference circuit 442. For example... Figure 25 As shown, the third example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442c) is... Figure 16 Compared to the reference circuit 441c shown, a shunt terminal 445r is further connected.

[0260] The differences from reference circuit 441c will be explained below. In reference circuit 442c, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0261] In the reference circuit 442c, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current of the control signal CTRL.

[0262] Furthermore, the changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current are similar to those in reference circuit 442a (reference circuit). Figure 21 The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current in the ) are the same.

[0263] A fourth example of the reference circuit 442 of the fourth embodiment will be described.

[0264] Figure 26 This is the circuit diagram for the fourth example of reference circuit 442. For example... Figure 26 As shown, the fourth example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442d) is... Figure 17 Compared to the reference circuit 441d shown, a shunt terminal 445r is further connected.

[0265] The differences from reference circuit 441d will be explained below. In reference circuit 442d, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0266] In the reference circuit 442d, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current of the control signal CTRL.

[0267] Furthermore, if the shunt current increases, the current flowing from the intermediate node N1 through resistor 453p to ground decreases. Consequently, the voltage between the first and second terminals of resistor 453p and the base-emitter voltage Vbe of transistor 452p decrease, thus reducing the second bias voltage VB2. In addition to the decrease in the second bias voltage VB2, the base-emitter voltage Vbe of transistor 451p also decreases, thus reducing the first bias voltage VB1.

[0268] Conversely, if the shunt current decreases, the current flowing from the intermediate node N1 through resistor 453p to ground increases. Consequently, the voltage between the first and second terminals of resistor 453p and the base-emitter voltage Vbe of transistor 452p increase, thus increasing the second bias voltage VB2. Furthermore, in addition to the increase in the second bias voltage VB2, the base-emitter voltage Vbe of transistor 451p also increases, thus increasing the first bias voltage VB1.

[0269] A fifth example of the reference circuit 442 of the fourth embodiment will be described.

[0270] Figure 27 This is the circuit diagram for the fifth example of reference circuit 442. For example... Figure 27 As shown, the fifth example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442e) is... Figure 18 Compared to the reference circuit 441e shown, a shunt terminal 445r is further connected.

[0271] The differences from reference circuit 441e will be explained below. In reference circuit 442e, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0272] In the reference circuit 442e, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current of the control signal CTRL.

[0273] Furthermore, the changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current are similar to those in reference circuit 442d (reference circuit). Figure 26 The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current in the ) are the same.

[0274] A sixth example of the reference circuit 442 of the fourth embodiment will be described.

[0275] Figure 28 This is the circuit diagram for the sixth example of reference circuit 442. For example... Figure 28 As shown, the sixth example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442f) is... Figure 19 Compared to the reference circuit 441f shown, a shunt terminal 445r is further connected.

[0276] The differences from reference circuit 441f will be explained below. In reference circuit 442f, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to control terminal 445a. Shunt terminal 445r is connected to intermediate node N1.

[0277] In the reference circuit 442f, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by the current of the control signal CTRL.

[0278] Furthermore, the changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current are similar to those in reference circuit 442d (reference circuit). Figure 26 The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the shunt current in the ) are the same.

[0279] A seventh example of the reference circuit 442 of the fourth embodiment will be described.

[0280] Figure 29 This is the circuit diagram for example seven of reference circuit 442. For example... Figure 29 As shown, the seventh example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442g) and... Figure 21 Compared to the reference circuit 442a shown, it further includes an operational amplifier 454.

[0281] The differences from the reference circuit 442a will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the first end of the resistor element 453n.

[0282] The voltage at the inverting input terminal of operational amplifier 454, through negative feedback from the output terminal to the inverting input terminal, becomes the same as the reference voltage Vsns at shunt terminal 445r. That is, the voltage at intermediate node N1 is the same as the reference voltage Vsns. The first bias voltage VB1 is the voltage at intermediate node N1 plus the base-emitter voltage Vbe of transistor 451n. The second bias voltage VB2 is the voltage at intermediate node N1 minus the base-emitter voltage Vbe of transistor 451p. A current is supplied at control terminal 445a as a control signal CTRL, for example.

[0283] Therefore, for example, if the temperature of the amplifying transistor 501 rises, the base-emitter voltage Vbe of the seventh transistor 521 thermally coupled to the amplifying transistor 501 decreases. Since the control terminal 445a can be regarded as a constant current source, the reference voltage Vsns decreases. This reduces the first bias voltage VB1 and the second bias voltage VB2. Conversely, if the temperature of the amplifying transistor 501 decreases, the base-emitter voltage Vbe of the seventh transistor 521 thermally coupled to the amplifying transistor 501 increases. Since the control terminal 445a can be regarded as a constant current source, the reference voltage Vsns increases. This increases the first bias voltage VB1 and the second bias voltage VB2.

[0284] An eighth example of the reference circuit 442 of the fourth embodiment will be described.

[0285] Figure 30 This is the circuit diagram for example eight of reference circuit 442. For example... Figure 30 As shown, the eighth example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442h) is... Figure 24 Compared to the reference circuit 442b shown, it further includes an operational amplifier 454.

[0286] The differences from the reference circuit 442b will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the base of the transistor 452n.

[0287] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the change in the reference voltage Vsns are the same as those in reference circuit 442g (reference circuit). Figure 29 The changes in the reference voltage Vsns in the first bias voltage VB1 and the second bias voltage VB2 are the same.

[0288] The ninth example of the reference circuit 442 of the fourth embodiment will be described.

[0289] Figure 31 This is the circuit diagram for example nine of reference circuit 442. For example... Figure 31 As shown, the ninth example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442i) and... Figure 25 Compared to the reference circuit 442c shown, it further includes an operational amplifier 454.

[0290] The differences from the reference circuit 442c are described below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the base of the transistor 452p.

[0291] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the change in the reference voltage Vsns are the same as those in reference circuit 442g (reference circuit). Figure 29 The changes in the reference voltage Vsns in the first bias voltage VB1 and the second bias voltage VB2 are the same.

[0292] The tenth example of the reference circuit 442 of the fourth embodiment will be described.

[0293] Figure 32 This is the circuit diagram for example ten of reference circuit 442. For example... Figure 32 As shown, the tenth example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442j) and... Figure 26 Compared to the reference circuit 442d shown, it further includes an operational amplifier 454.

[0294] The differences from reference circuit 442d will be explained below. Operational amplifier 454 has a non-inverting input terminal connected to control terminal 445a and shunt terminal 445r, an inverting input terminal connected to intermediate node N1, and an output terminal connected to the first end of resistor element 453n. Through the negative feedback of operational amplifier 454, the voltage of intermediate node N1 becomes the same as the reference voltage Vsns of shunt terminal 445r.

[0295] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the change in the reference voltage Vsns are the same as those in reference circuit 442g (reference circuit). Figure 29The changes in the reference voltage Vsns in the first bias voltage VB1 and the second bias voltage VB2 are the same.

[0296] The eleventh example of the reference circuit 442 of the fourth embodiment will be described.

[0297] Figure 33 This is the circuit diagram for example eleven of reference circuit 442. For example... Figure 33 As shown, the eleventh example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442k) and... Figure 27 Compared to the reference circuit 442e shown, it also includes an operational amplifier 454.

[0298] The differences from the reference circuit 442e will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the base of the transistor 452n.

[0299] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the change in the reference voltage Vsns are the same as those in reference circuit 442g (reference circuit). Figure 29 The changes in the reference voltage Vsns in the first bias voltage VB1 and the second bias voltage VB2 are the same.

[0300] The twelfth example of the reference circuit 442 of the fourth embodiment will be described.

[0301] Figure 34 This is the circuit diagram for example 12 of reference circuit 442. For example... Figure 34 As shown, the twelfth example of reference circuit 442 (hereinafter, sometimes referred to as reference circuit 442m) is... Figure 28 Compared to the reference circuit 442f shown, it further includes an operational amplifier 454.

[0302] The differences from the reference circuit 442f will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the base of the transistor 452p.

[0303] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the first bias voltage VB1 and the second bias voltage VB2 corresponding to the change in the reference voltage Vsns are the same as those in reference circuit 442g (reference circuit). Figure 29 The changes in the reference voltage Vsns in the first bias voltage VB1 and the second bias voltage VB2 are the same.

[0304] [Fifth Implementation Method]

[0305] The power amplification device and power amplification circuit of the fifth embodiment will be described.

[0306] Figure 35 This is the circuit diagram of power amplifier circuit 64. (Example) Figure 35 As shown, the power amplifier circuit 64 of the fifth embodiment differs from the power amplifier circuit 61 of the first embodiment in that the first bias transistor 421n and the second bias transistor 421p are respectively Darlington connected.

[0307] Power amplifier circuit 64 and Figure 6 Compared to the power amplifier circuit 61 shown, the base bias circuit 404 is included instead of the base bias circuit 401. The base bias circuit 404 is... Figure 6 Compared to the base bias circuit 401 shown, the first application circuit 431n and the second application circuit 431p are replaced by a third bias transistor 423n and a fourth bias transistor 423p, respectively.

[0308] The differences from the power amplifier circuit 61 will be explained below. The third bias transistor 423n has a collector to which a first voltage V1 is applied, an emitter to which the base of the first bias transistor 421n is electrically connected and a first bias voltage VB1 is applied to the base of the first bias transistor 421n, and a base to which a third bias voltage VB3 is applied to control the current flowing from the collector to the emitter.

[0309] In this embodiment, the third bias transistor 423n is an npn type transistor. The characteristics of the third bias transistor 423n may be approximately the same as or different from those of the first bias transistor 421n. The collector and base of the third bias transistor 423n are electrically connected to the terminal Tbat (power supply) that supplies the battery voltage Vbat and the bias input terminal 33n, respectively.

[0310] The first bias transistor 421n has a collector electrically connected to the collector of the third bias transistor 423n, a base electrically connected to the emitter of the third bias transistor 423n, and an emitter electrically connected to the Bout terminal 425.

[0311] The second bias transistor 421p has an emitter, a base, and a grounded collector that are electrically connected to the emitter of the first bias transistor 421n and the Bout terminal 425.

[0312] The fourth bias transistor 423p has a collector for which a second voltage V2 is applied, an emitter for which a second bias voltage VB2 is applied to the base of the second bias transistor 421p, and a base for which a fourth bias voltage VB4 is applied to control the current flowing from the emitter to the collector.

[0313] In this embodiment, the fourth bias transistor 423p is a PNP type transistor. The characteristics of the fourth bias transistor 423p can be approximately the same as or different from those of the second bias transistor 421p. The emitter, collector, and base of the fourth bias transistor 423p are electrically connected to the base, ground, and bias input terminal 33p of the second bias transistor 421p, respectively.

[0314] The first bias voltage VB1 is lower than the third bias voltage VB3 by the base-emitter voltage Vbe of the third bias transistor 423n. The second bias voltage VB2 is higher than the fourth bias voltage VB4 by the base-emitter voltage Vbe of the fourth bias transistor 423p.

[0315] The turn-on voltages of the second bias transistor 421p and the fourth bias transistor 423p are each approximately 0.7 volts, so the voltage relative to the Bout terminal 425 of the ground is approximately 1.4 volts. The turn-on voltage of the amplifying transistor 501 is approximately 1.4 volts, so the amplifying transistor 501 can be turned on by the base bias circuit 404.

[0316] In the base bias circuit 404, a Darlington connection is made between the first bias transistor 421n and the third bias transistor 423n, thereby achieving a configuration without the third bias transistor 423n (see [reference]). Figure 6 Compared to the previous configuration, this configuration improves the current amplification rate. Similarly, by connecting the second bias transistor 421p and the fourth bias transistor 423p in a Darlington configuration, compared to the configuration without the fourth bias transistor 423p (see [reference]...), the current amplification rate is improved. Figure 6 Compared to [other methods], it can improve the current amplification rate.

[0317] This increases the current flowing from terminal Tbat to ground through the first bias transistor 421n and the second bias transistor 421p, thus increasing the bias current supplied to the amplifying transistor 501.

[0318] Additionally, the impedance of the observation terminal Tn from the Bout terminal 425 can be set to Zrn × (1 / hfen). Here, Zrn is the configuration without the third bias transistor 423n (see [reference]). Figure 6The impedance in ) . Hfen is the current amplification of the third bias transistor 423n.

[0319] Additionally, the impedance of the observation terminal Tp from the Bout terminal 425 can be set to Zrp × (1 / hfep). Here, Zrp is a configuration without the fourth bias transistor 423p (see [reference]). Figure 6 The impedance in ) is Hfep, which is the current amplification of the fourth bias transistor 423p.

[0320] Therefore, the output impedance of the base bias circuit 404 can be reduced, allowing the base bias circuit 404 to approach an ideal bias supply source. Furthermore, for the AC input signal RFin, terminals Tn and Tp can be grounded with lower impedance.

[0321] [Sixth Implementation Method]

[0322] The power amplification device and power amplification circuit of the sixth embodiment will be described.

[0323] Figure 36 This is the circuit diagram of power amplifier circuit 65. (Example) Figure 36 As shown, the power amplifier circuit 65 of the sixth embodiment differs from the power amplifier circuit 64 of the fifth embodiment in that it adjusts the third bias voltage VB3 and the fourth bias voltage VB4 according to the temperature.

[0324] Power amplifier circuit 65 and Figure 35 Compared to the power amplifier circuit 64 shown, the base bias circuit 404 is replaced by a base bias circuit 405. The base bias circuit 405 is similar to... Figure 35 Compared to the base bias circuit 404 shown, a reference circuit 443 is further included.

[0325] The reference circuit 443 has a control terminal 445a connected to the control signal input terminal 34, a bias supply terminal 445n connected to the base of the third bias transistor 423n, and a bias supply terminal 445p connected to the base of the fourth bias transistor 423p.

[0326] The first example of the reference circuit 443 of the sixth embodiment will be described.

[0327] Figure 37 This is the circuit diagram for the first example of reference circuit 443. For example... Figure 37 As shown, the first example of reference circuit 443 (hereinafter, sometimes referred to as reference circuit 443a) and... Figure 14 Compared to the reference circuit 441a shown, the bias supply terminals 445n and 445p have different connection destinations.

[0328] The differences from reference circuit 441a will be explained below. Transistors 452n, 451n, 451p, and 452p function as the third, fourth, fifth, and sixth diodes, respectively.

[0329] The collector and base of transistor 452n correspond to the anode of the third diode, and the emitter of transistor 452n corresponds to the cathode of the third diode. The collector and base of transistor 451n correspond to the anode of the fourth diode, and the emitter of transistor 451n corresponds to the cathode of the fourth diode.

[0330] The collector and base of transistor 451p are equivalent to the anode of the fifth diode, and the emitter of transistor 451p is equivalent to the cathode of the fifth diode. The collector and base of transistor 452p are equivalent to the anode of the sixth diode, and the emitter of transistor 452p is equivalent to the cathode of the sixth diode.

[0331] The bias supply terminal 445n is connected to the base and collector of transistor 452n. The bias supply terminal 445p is connected to the base and collector of transistor 452p.

[0332] A control signal CTRL for controlling the current flowing from the emitter of transistor 452n to the emitter of transistor 452p is supplied at control terminal 445a. Specifically, in reference circuit 443a, a current or voltage is supplied at control terminal 445a as the control signal CTRL.

[0333] Therefore, the potential of the base of transistor 452p relative to ground, i.e., the fourth bias voltage VB4, becomes the voltage between the first and second terminals of resistor element 453p. Furthermore, the potential of the base of transistor 452n relative to ground, i.e., the third bias voltage VB3, becomes the voltage obtained by applying the base-emitter voltage Vbe of transistor 452p, the base-emitter voltage Vbe of transistor 451p, the base-emitter voltage Vbe of transistor 451n, and the base-emitter voltage Vbe of transistor 452n to the fourth bias voltage VB4.

[0334] The voltage between the first and second terminals of the resistor 453p and the base-emitter voltage Vbe of transistors 452p, 451p, 451n, and 452n can be adjusted by controlling the current or voltage of the control signal CTRL. Therefore, in the reference circuit 443a, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by controlling the current or voltage of the control signal CTRL.

[0335] A second example of the reference circuit 441 of the sixth embodiment will be described.

[0336] Figure 38This is the circuit diagram for the second example of reference circuit 443. For example... Figure 38 As shown, the second example of reference circuit 443 (hereinafter, sometimes referred to as reference circuit 443b) is... Figure 37 Compared to the reference circuit 443a shown, the connection destination of the control terminal 445a is different.

[0337] The differences from reference circuit 443a will be explained below. The base and emitter of transistor 451n are equivalent to a fourth diode. In this case, the base and emitter of transistor 451n are equivalent to the anode and cathode of the fourth diode, respectively.

[0338] The first terminal of the resistor element 453n is connected to the terminal supplying the battery voltage Vbat. The transistor 451n is configured without diode connection, and has a collector connected to the emitter of the transistor 452n, a base connected to the control terminal 445a, and an emitter connected to the emitter of the transistor 451p.

[0339] In the reference circuit 443b, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current or voltage of the control signal CTRL.

[0340] A third example of the reference circuit 443 of the sixth embodiment will be described.

[0341] Figure 39 This is the circuit diagram for the third example of reference circuit 443. For example... Figure 39 As shown, the third example of reference circuit 443 (hereinafter, sometimes referred to as reference circuit 443c) is... Figure 37 Compared to the reference circuit 443a shown, the connection destination of the control terminal 445a is different.

[0342] The differences from reference circuit 443a will be explained below. The emitter and base of transistor 451p are equivalent to a fifth diode. In this case, the emitter and base of transistor 451p are equivalent to the anode and cathode of a fifth diode, respectively.

[0343] The first terminal of the resistor element 453n is connected to the terminal supplying the battery voltage Vbat. The transistor 451p is configured without a diode connection, and has an emitter connected to the emitter of the transistor 451n, a base connected to the control terminal 445a, and a collector connected to the emitter of the transistor 452p.

[0344] In the reference circuit 443c, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current or voltage of the control signal CTRL.

[0345] A fourth example of the reference circuit 443 of the sixth embodiment will be described.

[0346] Figure 40 This is the circuit diagram for the fourth example of reference circuit 443. For example... Figure 40 As shown, the fourth example of reference circuit 443 (hereinafter, sometimes referred to as reference circuit 443d) is... Figure 17 Compared to the reference circuit 441d shown, the bias supply terminals 445n and 445p have different connection destinations. In the reference circuit 443d, transistors 451n and 452n are Darlington connected, and transistors 451p and 452p are Darlington connected.

[0347] The differences from reference circuit 441d will be explained below. The base and emitter of transistor 452n correspond to the third diode. In this case, the base and emitter of transistor 452n correspond to the anode and cathode of the third diode, respectively. The base and emitter of transistor 451n correspond to the fourth diode. In this case, the base and emitter of transistor 451n correspond to the anode and cathode of the fourth diode, respectively.

[0348] The emitter and base of transistor 451p are equivalent to a fifth diode. In this case, the emitter and base of transistor 451p are equivalent to the anode and cathode of the fifth diode, respectively. The emitter and base of transistor 452p are equivalent to a sixth diode. In this case, the emitter and base of transistor 452p are equivalent to the anode and cathode of the sixth diode, respectively.

[0349] The bias supply terminal 445n is connected to the base and collector of transistor 452n. The bias supply terminal 445p is connected to the base and collector of transistor 452p.

[0350] In reference circuit 443d, current or voltage is supplied to control terminal 445a as control signal CTRL. Therefore, the potential of the base of transistor 452p relative to ground, i.e., the fourth bias voltage VB4, becomes the voltage between the first and second terminals of resistive element 453p. Furthermore, the potential of the base of transistor 452n relative to ground, i.e., the third bias voltage VB3, becomes the voltage obtained by applying the base-emitter voltage Vbe of transistor 452p, the base-emitter voltage Vbe of transistor 451p, the base-emitter voltage Vbe of transistor 451n, and the base-emitter voltage Vbe of transistor 452n to the fourth bias voltage VB4.

[0351] The voltage between the first and second terminals of the resistor 453p and the base-emitter voltage Vbe of transistors 452p, 451p, 451n, and 452n can be adjusted by controlling the current or voltage of the control signal CTRL. Therefore, in the reference circuit 443d, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by controlling the current or voltage of the control signal CTRL.

[0352] A fifth example of the reference circuit 443 of the sixth embodiment will be described.

[0353] Figure 41 This is the circuit diagram for the fifth example of reference circuit 443. For example... Figure 41 As shown, the fifth example of reference circuit 443 (hereinafter, sometimes referred to as reference circuit 443e) is... Figure 40 Compared to the reference circuit 443d shown, the connection destination of the control terminal 445a is different.

[0354] The differences from reference circuit 443d are explained below. The first terminal of resistor 453n is connected to the terminal supplying the battery voltage Vbat. Control terminal 445a is connected to the base of transistor 451n.

[0355] In the reference circuit 443e, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current or voltage of the control signal CTRL.

[0356] A sixth example of the reference circuit 443 of the sixth embodiment will be described.

[0357] Figure 42 This is the circuit diagram for example six of reference circuit 443. For example... Figure 42 As shown, the sixth example of reference circuit 443 (hereinafter, sometimes referred to as reference circuit 443f) is... Figure 40 Compared to the reference circuit 443d shown, the connection destination of the control terminal 445a is different.

[0358] The differences from reference circuit 443d are explained below. The first terminal of resistor 453n is connected to the terminal supplying the battery voltage Vbat. Control terminal 445a is connected to the base of transistor 451p.

[0359] In the reference circuit 443f, the current flowing through the resistor element 453n, transistors 452n, 451n, 451p, and 452p, and the resistor element 453p can be adjusted by adjusting the current or voltage as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current or voltage of the control signal CTRL.

[0360] [Seventh Implementation Method]

[0361] The power amplification device and power amplification circuit of the seventh embodiment will be described.

[0362] Figure 43 This is the circuit diagram of power amplifier circuit 66. (Example) Figure 43 As shown, the power amplifier circuit 66 of the seventh embodiment differs from the power amplifier circuit 65 of the sixth embodiment in that it further adjusts the third bias voltage VB3 and the fourth bias voltage VB4 according to the temperature of the amplifying transistor 501.

[0363] Power amplifier circuit 66 and Figure 36 Compared to the power amplifier circuit 65 shown, the base bias circuit 406 is included instead of the base bias circuit 405, and further includes an inter-component connection conductor 351b and a replication circuit 511. The base bias circuit 406 and... Figure 36 Compared to the base bias circuit 405 shown, the reference circuit 444 is included instead of the reference circuit 443.

[0364] The reference circuit 444 has a control terminal 445a connected to the control signal input terminal 34, a bias supply terminal 445n connected to the base of the third bias transistor 423n, a bias supply terminal 445p connected to the base of the fourth bias transistor 423p, and a shunt terminal 445r connected to the reference bias terminal 512a of the replication circuit 511 via the inter-component connection conductor 351b.

[0365] The first example of the reference circuit 444 of the seventh embodiment will be described.

[0366] Figure 44 This is the circuit diagram for the first example of reference circuit 444. For example... Figure 44As shown, the first example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444a) and... Figure 37 Compared to the reference circuit 443a shown, a shunt terminal 445r is further connected.

[0367] The differences from reference circuit 443a will be explained below. In reference circuit 444a, an intermediate node N1 is provided between the emitters of transistor 451n and transistor 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0368] In the reference circuit 444a, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current of the control signal CTRL.

[0369] Transistors 451n and 451p have approximately the same characteristics as the first bias transistor 421n and the second bias transistor 421p, respectively, and transistors 452n and 452p have approximately the same characteristics as the third bias transistor 423n and the fourth bias transistor 423p, respectively. Therefore, the potential of the shunt terminal 445r relative to the ground line, i.e., the reference voltage Vsns, is approximately the same as the potential of the Bout terminal 425 relative to the ground line.

[0370] like Figure 43 as well as Figure 44 As shown above, the seventh transistor 521 in the replication circuit 511 has approximately the same temperature as the amplifying transistor 501. For example, if the temperature of the seventh transistor 521 rises, the base current of the seventh transistor 521 increases, that is, the shunt current increases.

[0371] If the shunt current increases, the current flowing from the intermediate node N1 through transistors 451p, 452p, and resistor 453p to ground decreases. Consequently, the voltage between the first and second terminals of resistor 453p decreases, thus lowering the fourth bias voltage VB4. Furthermore, in addition to the decrease in the fourth bias voltage VB4, the base-emitter voltage Vbe of transistors 452p and 451p also decrease, thus lowering the third bias voltage VB3.

[0372] If the third bias voltage VB3 and the fourth bias voltage VB4 decrease, the bias voltage supplied to the amplifying transistor 501 by the base bias circuit 406 decreases, thus reducing the current flowing between the collector and emitter of the amplifying transistor 501. This suppresses the temperature rise of the amplifying transistor 501, i.e., it suppresses thermal runaway of the amplifying transistor 501.

[0373] On the other hand, if the temperature of the seventh transistor 521 decreases, the base current of the seventh transistor 521 decreases, that is, the shunt current decreases.

[0374] If the shunt current decreases, the current flowing from the intermediate node N1 through transistors 451p, 452p, and resistor 453p to ground increases. Consequently, the voltage between the first and second terminals of resistor 453p increases, thus increasing the fourth bias voltage VB4. In addition to the increase in the fourth bias voltage VB4, the base-emitter voltage Vbe of transistors 452p and 451p also increase, thus increasing the third bias voltage VB3.

[0375] If the third bias voltage VB3 and the fourth bias voltage VB4 are increased, the bias voltage supplied to the amplifying transistor 501 by the base bias circuit 406 is increased, thus increasing the current flowing between the collector and emitter of the amplifying transistor 501. This helps to suppress the temperature drop of the amplifying transistor 501.

[0376] That is, by configuring the seventh transistor 521 so that the temperature change is approximately the same as the temperature change of the amplifying transistor 501, and feeding back the current change based on the temperature change of the seventh transistor 521 to the reference circuit 444a, it is possible to supply a bias to the amplifying transistor 501 to suppress the temperature change of the amplifying transistor 501.

[0377] A second example of the reference circuit 444 of the seventh embodiment will be described.

[0378] Figure 45 This is the circuit diagram for the second example of reference circuit 444. For example... Figure 45 As shown, the second example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444b) is... Figure 38 Compared to the reference circuit 443b shown, a shunt terminal 445r is further connected.

[0379] The differences from reference circuit 443b will be explained below. In reference circuit 444b, an intermediate node N1 is provided between the emitters of transistor 451n and transistor 451p. Current is supplied as a control signal CTRL, for example, to control terminal 445a. Shunt terminal 445r is connected to intermediate node N1.

[0380] In the reference circuit 444b, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current of the control signal CTRL.

[0381] Furthermore, the changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current are the same as those in reference circuit 444a (reference). Figure 44 The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current in the ) are the same.

[0382] A third example of the reference circuit 444 of the seventh embodiment will be described.

[0383] Figure 46 This is the circuit diagram for the third example of reference circuit 444. For example... Figure 46 As shown, the third example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444c) is... Figure 39 Compared to the reference circuit 443c shown, a shunt terminal 445r is further connected.

[0384] The differences from reference circuit 443c will be explained below. In reference circuit 444c, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to control terminal 445a. Shunt terminal 445r is connected to intermediate node N1.

[0385] In the reference circuit 444c, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current of the control signal CTRL.

[0386] Furthermore, the changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current are the same as those in reference circuit 444a (reference). Figure 44 The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current in the ) are the same.

[0387] A fourth example of the reference circuit 444 of the seventh embodiment will be described.

[0388] Figure 47 This is the circuit diagram for the fourth example of reference circuit 444. For example... Figure 47 As shown, the fourth example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444d) is... Figure 40Compared to the reference circuit 443d shown, a shunt terminal 445r is further connected.

[0389] The differences from reference circuit 443d will be explained below. In reference circuit 444d, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0390] In the reference circuit 444d, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current of the control signal CTRL.

[0391] Furthermore, if the shunt current increases, the current flowing from the intermediate node N1 through resistor 453p to ground decreases. Consequently, the voltage between the first and second terminals of resistor 453p decreases, thus lowering the fourth bias voltage VB4. In addition to the decrease in the fourth bias voltage VB4, the base-emitter voltage Vbe of transistor 452p and the base-emitter voltage Vbe of transistor 451p also decrease, thus lowering the third bias voltage VB3.

[0392] Conversely, if the shunt current decreases, the current flowing from the intermediate node N1 through resistor 453p to ground increases. Consequently, the voltage between the first and second terminals of resistor 453p increases, thus increasing the fourth bias voltage VB4. In addition to the increase in the fourth bias voltage VB4, the base-emitter voltage Vbe of transistor 452p and the base-emitter voltage Vbe of transistor 451p also increase, thus increasing the third bias voltage VB3.

[0393] A fifth example of the reference circuit 444 of the seventh embodiment will be described.

[0394] Figure 48 This is the circuit diagram for the fifth example of reference circuit 444. For example... Figure 48 As shown, the fifth example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444e) is... Figure 41 Compared to the reference circuit 443e shown, a shunt terminal 445r is further connected.

[0395] The differences from reference circuit 443e will be explained below. In reference circuit 444e, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0396] In the reference circuit 444e, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current of the control signal CTRL.

[0397] Furthermore, the changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current are similar to those in reference circuit 444d (reference circuit). Figure 47 The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current in the ) are the same.

[0398] A sixth example of the reference circuit 444 of the seventh embodiment will be described.

[0399] Figure 49 This is the circuit diagram for example six of reference circuit 444. For example... Figure 49 As shown, the sixth example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444f) and... Figure 42 Compared to the reference circuit 443f shown, a shunt terminal 445r is further connected.

[0400] The differences from reference circuit 443f will be explained below. In reference circuit 444f, an intermediate node N1 is provided between the emitters of transistors 451n and 451p. Current is supplied as a control signal CTRL, for example, to the control terminal 445a. The shunt terminal 445r is connected to the intermediate node N1.

[0401] In the reference circuit 444f, the current flowing from the resistor element 453n through the intermediate node N1 to the ground can be adjusted by adjusting the current as a control signal CTRL. That is, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by the current of the control signal CTRL.

[0402] Furthermore, the changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current are similar to those in reference circuit 444d (reference circuit). Figure 47 The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the shunt current in the ) are the same.

[0403] A seventh example of the reference circuit 444 of the seventh embodiment will be described.

[0404] Figure 50 This is the circuit diagram for example seven of reference circuit 444. For example... Figure 50 As shown, the seventh example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444g) and... Figure 44Compared to the reference circuit 444a shown, it further includes an operational amplifier 454.

[0405] The differences from the reference circuit 444a will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the first end of the resistor element 453n.

[0406] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. Therefore, the third bias voltage VB3 is the voltage obtained by adding the base-emitter voltage Vbe of transistor 451n and the base-emitter voltage Vbe of transistor 452n to the voltage at intermediate node N1. The fourth bias voltage VB4 is the voltage obtained by subtracting the base-emitter voltage Vbe of transistor 451p and the base-emitter voltage Vbe of transistor 452p from the voltage at intermediate node N1. Current is supplied at control terminal 445a as a control signal CTRL, for example.

[0407] Therefore, for example, if the temperature of the amplifying transistor 501 rises, the base-emitter voltage Vbe of the seventh transistor 521 thermally coupled to the amplifying transistor 501 decreases. Since the control terminal 445a can be regarded as a constant current source, the reference voltage Vsns decreases. This allows the third bias voltage VB3 and the fourth bias voltage VB4 to decrease. Conversely, if the temperature of the amplifying transistor 501 decreases, the base-emitter voltage Vbe of the seventh transistor 521 thermally coupled to the amplifying transistor 501 increases. Since the control terminal 445a can be regarded as a constant current source, the reference voltage Vsns increases. This allows the third bias voltage VB3 and the fourth bias voltage VB4 to increase.

[0408] An eighth example of the reference circuit 444 of the seventh embodiment will be described.

[0409] Figure 51 This is the circuit diagram for example eight of reference circuit 444. For example... Figure 51 As shown, the eighth example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444h) and... Figure 45 Compared to the reference circuit 444b shown, it further includes an operational amplifier 454.

[0410] The differences from reference circuit 444b will be explained below. Operational amplifier 454 has a non-inverting input terminal connected to control terminal 445a and shunt terminal 445r, an inverting input terminal connected to intermediate node N1, and an output terminal connected to the base of transistor 451n.

[0411] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the change in the reference voltage Vsns are related to the changes in reference circuit 444g (reference circuit). Figure 50 The changes in the reference voltage Vsns in the reference voltage Vsns correspond to the changes in the third bias voltage VB3 and the fourth bias voltage VB4.

[0412] The ninth example of the reference circuit 444 of the seventh embodiment will be described.

[0413] Figure 52 This is the circuit diagram for example nine of reference circuit 444. For example... Figure 52 As shown, the ninth example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444i) and... Figure 46 Compared to the reference circuit 444c shown, it further includes an operational amplifier 454.

[0414] The differences from the reference circuit 444c are described below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the base of the transistor 451p.

[0415] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the change in the reference voltage Vsns are related to the changes in reference circuit 444g (reference circuit). Figure 50 The changes in the reference voltage Vsns in the reference voltage Vsns correspond to the changes in the third bias voltage VB3 and the fourth bias voltage VB4.

[0416] The tenth example of the reference circuit 444 of the seventh embodiment will be described.

[0417] Figure 53 This is the circuit diagram for example ten of reference circuit 444. For example... Figure 53 As shown, the tenth example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444j) and... Figure 47 Compared to the reference circuit 444d shown, it further includes an operational amplifier 454.

[0418] The differences from the reference circuit 444d will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the first end of the resistor element 453n.

[0419] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the change in the reference voltage Vsns are related to the changes in reference circuit 444g (reference circuit). Figure 50 The changes in the reference voltage Vsns in the reference voltage Vsns correspond to the changes in the third bias voltage VB3 and the fourth bias voltage VB4.

[0420] The eleventh example of the reference circuit 444 of the seventh embodiment will be described.

[0421] Figure 54 This is the circuit diagram for example eleven of reference circuit 444. For example... Figure 54 As shown, the eleventh example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444k) and... Figure 48 Compared to the reference circuit 444e shown, it further includes an operational amplifier 454.

[0422] The differences from the reference circuit 444e will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the base of the transistor 451n.

[0423] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the change in the reference voltage Vsns are related to the changes in reference circuit 444g (reference circuit). Figure 50 The changes in the reference voltage Vsns in the reference voltage Vsns correspond to the changes in the third bias voltage VB3 and the fourth bias voltage VB4.

[0424] The twelfth example of the reference circuit 444 of the seventh embodiment will be described.

[0425] Figure 55 This is the circuit diagram for example 12 of reference circuit 444. For example... Figure 55 As shown, the twelfth example of reference circuit 444 (hereinafter, sometimes referred to as reference circuit 444m) is... Figure 49 Compared to the reference circuit 444f shown, it further includes an operational amplifier 454.

[0426] The differences from the reference circuit 444f will be explained below. The operational amplifier 454 has a non-inverting input terminal connected to the control terminal 445a and the shunt terminal 445r, an inverting input terminal connected to the intermediate node N1, and an output terminal connected to the base of the transistor 451p.

[0427] Through the negative feedback of operational amplifier 454, the voltage at intermediate node N1 becomes the same as the reference voltage Vsns at shunt terminal 445r. The changes in the third bias voltage VB3 and the fourth bias voltage VB4 corresponding to the change in the reference voltage Vsns are related to the changes in reference circuit 444g (reference circuit). Figure 50 The changes in the reference voltage Vsns in the reference voltage Vsns correspond to the changes in the third bias voltage VB3 and the fourth bias voltage VB4.

[0428] Furthermore, although the configuration of the base bias circuits 401-406 including the first application circuit 431n and the second application circuit 431p has been described in the first to seventh embodiments, it is not limited thereto. The base bias circuits 401-406 may also be configured without including the first application circuit 431n and the second application circuit 431p. Specifically, when the turn-on voltage of the amplifying transistor 501 is at the same level as the turn-on voltage of the first bias transistor 421n and the second bias transistor 421p, the first bias transistor 421n and the second bias transistor 421p can supply bias to the amplifying transistor 501 even without the first application circuit 431n and the second application circuit 431p.

[0429] Furthermore, although the configuration of the power amplifier device 11 including the module substrate 310 has been described, it is not limited to this. The power amplifier device 11 may also be configured without the module substrate 310.

[0430] The exemplary embodiments of the present invention have been described above. Power amplifier circuits 61-66 include an amplifying transistor 501, a resistive element 502, a first biasing transistor 421n, and a second biasing transistor 421p. The amplifying transistor 501 has a base for supplying an input signal RFin, amplifies the input signal RFin, and outputs it. The resistive element 502 has a first terminal and a second terminal electrically connected to the base of the amplifying transistor 501. The first biasing transistor 421n has a collector for applying a first voltage V1, a base for applying a first bias voltage VB1, and an emitter electrically connected to the first terminal of the resistive element 502, through which a bias current is supplied to the base of the amplifying transistor 501 via the resistive element 502. Furthermore, the second biasing transistor 421p has an emitter electrically connected to the emitter of the first biasing transistor 421n and the first terminal of the resistive element 502, a base for applying a second bias voltage VB2, and a collector for applying a second voltage V2 lower than the first voltage V1.

[0431] With this configuration, a current with a positive instantaneous value in the AC component of the base bias current Ieef, which flows from the Bout terminal 425 between the emitter of the first bias transistor 421n and the emitter of the second bias transistor 421p toward the resistor element 502, can flow from the base of the first bias transistor 421n through its emitter to the resistor element 502, and a current with a negative instantaneous value can flow from the resistor element 502 through the emitter of the second bias transistor 421p to its base. Therefore, the base bias circuits 401-406 in the power amplifier circuits 61-66 can be prevented from becoming cut off, and even if the amplitude of the AC component contained in the base bias current Ieef changes, the time-averaged variation of the base bias current Ieef can be suppressed. By suppressing the time-averaged variation of the base bias current Ieef, the variation of the operating point of the amplifier transistor 501 can be suppressed. Therefore, regardless of the amplitude of the RF current in the input signal RFin, the variation of the amplification rate of the amplifier transistor 501 can be suppressed. Thus, the variation of the operating point of the amplifier transistor 501 can be suppressed, and the linear degradation of the input-output relationship can be suppressed.

[0432] Furthermore, power amplifier circuits 61-63 include a first application circuit 431n and a second application circuit 431p. The first application circuit 431n is disposed between terminal Tbat and the collector of the first bias transistor 421n, and applies a first voltage V1, which is lower than the battery voltage Vbat at terminal Tbat, to the collector of the first bias transistor 421n. The second application circuit 431p is disposed between ground and the collector of the second bias transistor 421p, and applies a second voltage V2, which is higher than the ground voltage, to the collector of the second bias transistor 421p.

[0433] With this configuration, compared to the case where the first application circuit 431n and the second application circuit 431p are not provided, the emitter voltage of the first bias transistor 421n can be increased by the first voltage V1 and the second voltage V2. Therefore, for example, even when the turn-on voltage of the amplifying transistor 501 is higher than the turn-on voltages of the first bias transistor 421n and the second bias transistor 421p, the emitter voltage of the first bias transistor 421n can be made to a voltage suitable for biasing the amplifying transistor 501.

[0434] Additionally, power amplifier circuits 62 and 63 respectively include reference circuits 441 and 442. Reference circuits 441 and 442 include a first diode, a second diode, and a control terminal 445a. The first diode has an anode and a cathode connected to the base of a first bias transistor 421n. The second diode has an anode connected to the cathode of the first diode and a cathode connected to the base of a second bias transistor 421p. The control terminal 445a is used to control the current flowing from the cathode of the first diode to the anode of the second diode.

[0435] Generally, if the temperature of the amplifying transistor 501 increases, its forward voltage decreases. Under such conditions, if a constant bias is continuously supplied to the base of the amplifying transistor 501, an increase in the current flowing through the transistor, a further rise in its temperature, and a further decrease in its forward voltage can lead to thermal runaway of the transistor 501. In the above configuration, since current flows through the first and second diodes, the first bias voltage VB1 is the voltage obtained by adding the forward voltages of the first and second diodes to the second bias voltage VB2. The forward voltages of the first and second diodes decrease as their temperatures rise, thus reducing the first bias voltage VB1 at high temperatures, and consequently reducing the bias voltage applied to the base of the amplifying transistor 501. In other words, when the temperature of the first diode and the second diode rises due to heat emitted by the amplifying transistor 501 or heat flowing in from the environment at high temperatures, the bias voltage applied to the base of the amplifying transistor 501 can be reduced, so the amplifying transistor 501 is biased at a good operating point, and thermal runaway of the amplifying transistor 501 can be suppressed.

[0436] Additionally, in the power amplifier circuit 63, the reference circuit 442 includes a circuit connected to the cathode of the first diode and shunting a portion of the current flowing from the cathode of the first diode to the anode of the second diode to the shunt terminal 445r of the replication circuit 511.

[0437] With this configuration, the current flowing through the second diode can be varied by adjusting the shunt current shunted from the shunt terminal 445r, thus changing the forward voltage of the second diode and consequently changing the first bias voltage VB1. Therefore, the first bias voltage VB1 can be adjusted not only by controlling the current based on the control terminal 445a, but also by controlling the shunt current shunted from the shunt terminal 445r.

[0438] Additionally, in the power amplifier circuit 63, the reference circuits 442g, 442h, 442i, 442j, 442k, and 442m include an operational amplifier 454, which has an inverting input terminal connected to the cathode of the first diode and a non-inverting input terminal connected to the shunt terminal 445r and the control terminal 445a.

[0439] With this configuration, through the negative feedback of the operational amplifier 454, the voltage at the cathode of the first diode is the same as the reference voltage Vsns at the shunt terminal 445r. Therefore, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted by adjusting the reference voltage Vsns.

[0440] Furthermore, in the reference circuits 441a, 441b, and 441c in the power amplifier circuit 62 and the reference circuits 442a, 442b, 442c, 442g, 442h, and 442i in the power amplifier circuit 63, the first diode is a transistor 451n that has approximately the same characteristics as the first bias transistor 421n and is connected in a diode configuration. The second diode is a transistor 451p that has approximately the same characteristics as the second bias transistor 421p and is connected in a diode configuration.

[0441] With this configuration, the temperature change of the forward voltage of the first diode, i.e., the temperature change of the base-emitter voltage Vbe of transistor 451n, can be made consistent with the temperature change of the base-emitter voltage Vbe of the first bias transistor 421n. Furthermore, the temperature change of the forward voltage of the second diode, i.e., the temperature change of the base-emitter voltage Vbe of transistor 451p, can be made consistent with the temperature change of the base-emitter voltage Vbe of the second bias transistor 421p. Therefore, even under temperature variations, the deviation of the first bias voltage VB1 from the voltage suitable for the base bias of the first bias transistor 421n can be suppressed.

[0442] Furthermore, in the reference circuits 441d, 441e, and 441f in power amplifier circuit 62 and the reference circuits 442a, 442b, 442c, 442j, 442k, and 442m in power amplifier circuit 63, the first diode is included in a transistor 451n having substantially the same characteristics as the first bias transistor 421n. The second diode is included in a transistor 451p having substantially the same characteristics as the second bias transistor 421p.

[0443] With this configuration, the temperature change of the forward voltage of the first diode, i.e., the temperature change of the base-emitter voltage Vbe of transistor 451n, can be made consistent with the temperature change of the base-emitter voltage Vbe of the first bias transistor 421n. Furthermore, the temperature change of the forward voltage of the second diode, i.e., the temperature change of the base-emitter voltage Vbe of transistor 451p, can be made consistent with the temperature change of the base-emitter voltage Vbe of the second bias transistor 421p. Therefore, even under temperature variations, the deviation of the first bias voltage VB1 from the voltage suitable for the base bias of the first bias transistor 421n can be suppressed.

[0444] Additionally, the reference circuit 441 in power amplifier circuit 62 and the reference circuit 442 in power amplifier circuit 63 include a third application circuit 455. The third application circuit 455 is disposed between the ground wire and the cathode of the second diode, and applies a second bias voltage VB2 to the cathode of the second diode.

[0445] With this configuration, a second bias voltage VB2 suitable for biasing can be applied to the base of the second bias transistor 421p.

[0446] Additionally, power amplifier circuits 64-66 include a third bias transistor 423n and a fourth bias transistor 423p. The third bias transistor 423n has a collector for applying the battery voltage Vbat to terminal Tbat as a first voltage V1, an emitter connected to the base of the first bias transistor 421n and applying a first bias voltage VB1 to the base of the first bias transistor 421n, and a base for applying a third bias voltage VB3 to control the current flowing from the collector to the emitter. The fourth bias transistor 423p has a collector for applying zero volts to ground as a second voltage V2, an emitter connected to the base of the second bias transistor 421p and applying a second bias voltage VB2 to the base of the second bias transistor 421p, and a base for applying a fourth bias voltage VB4 to control the current flowing from the emitter to the collector.

[0447] Thus, by configuring the third bias transistor 423n and the first bias transistor 421n in a Darlington connection, the current amplification rate can be improved compared to the configuration that only uses the first bias transistor 421n. Similarly, by configuring the fourth bias transistor 423p and the second bias transistor 421p in a Darlington connection, the current amplification rate can be improved compared to the configuration that only uses the second bias transistor 421p. As a result, the current flowing from terminal Tbat through the first bias transistor 421n and the second bias transistor 421p to the ground line can be increased, thus increasing the bias current supplied to the amplifying transistor 501.

[0448] Furthermore, compared to a configuration without a Darlington connection, the impedance of terminal Tn observed from terminal Bout 425 can be reduced to (1 / hfen). Similarly, compared to a configuration without a Darlington connection, the impedance of terminal Tp observed from terminal Bout 425 can be reduced to (1 / hfep). This reduces the output impedance of base bias circuits 404-406, allowing them to approach an ideal bias supply source. Additionally, for the AC input signal RFin, terminals Tn and Tp can be grounded with lower impedance.

[0449] Furthermore, compared to a configuration without Darlington connections, the emitter voltage of the first bias transistor 421n can be increased by the base-emitter voltage Vbe of the third bias transistor 423n and the base-emitter voltage Vbe of the fourth bias transistor 423p. Therefore, even if the turn-on voltage of the amplifying transistor 501 is higher than the turn-on voltages of the first bias transistor 421n and the second bias transistor 421p, the emitter voltage of the first bias transistor 421n can still be made suitable for biasing the amplifying transistor 501.

[0450] Additionally, power amplifier circuits 65 and 66 respectively include reference circuits 443 and 444. Reference circuits 443 and 444 include a third diode, a fourth diode, a fifth diode, a sixth diode, and a control terminal 445a. The third diode has an anode and a cathode connected to the base of the third bias transistor 423n. The fourth diode has an anode and a cathode connected to the cathode of the third diode. The fifth diode has an anode and a cathode connected to the cathode of the fourth diode. The sixth diode has an anode connected to the cathode of the fifth diode and a cathode connected to the base of the fourth bias transistor 423p. Furthermore, the control terminal 445a is used to control the current flowing from the cathode of the third diode to the anode of the sixth diode.

[0451] In the above configuration, since current flows through the third to sixth diodes, the third bias voltage VB3 becomes the voltage obtained by adding the forward voltages of the third, fourth, fifth, and sixth diodes to the fourth bias voltage VB4. These forward voltages decrease as the temperature of the third to sixth diodes increases, thus reducing the third bias voltage VB3 at high temperatures, and consequently reducing the bias voltage applied to the base of the amplifying transistor 501. In other words, when the temperature of the third to sixth diodes rises due to heat emitted by the amplifying transistor 501 or heat flowing in from the environment at high temperatures, the bias voltage applied to the base of the amplifying transistor 501 can be reduced. Therefore, the amplifying transistor 501 is biased at a good operating point, and thermal runaway of the amplifying transistor 501 can be suppressed.

[0452] Furthermore, the potential difference between the base of the third bias transistor 423n (which is Darlington connected) and the base of the fourth bias transistor 423p (which is Darlington connected) is the sum of the four base-emitter voltages Vbe, and the potential difference between the anode of the third diode and the cathode of the sixth diode is the sum of four forward voltages. Therefore, a suitable third bias voltage VB3 and a suitable fourth bias voltage VB4 can be applied to the base of the third bias transistor 423n and the base of the fourth bias transistor 423p, respectively.

[0453] Additionally, in the power amplifier circuit 66, the reference circuit 444 includes a connection to the cathode of the fourth diode and shunts a portion of the current flowing from the cathode of the fourth diode to the anode of the fifth diode to the shunt terminal 445r of the replication circuit 511.

[0454] With this configuration, the current flowing through the fifth and sixth diodes can be varied by adjusting the shunt current shunted from the shunt terminal 445r. Therefore, the forward voltages of the fifth and sixth diodes can be changed, thereby altering the third bias voltage VB3. Thus, the third bias voltage VB3 can be adjusted not only by current control based on the control terminal 445a but also by the shunt current shunted from the shunt terminal 445r.

[0455] Additionally, in the power amplifier circuit 66, the reference circuits 444g, 444h, 444i, 444j, 444k, and 444m include an operational amplifier 454, which has an inverting input terminal connected to the cathode of the fourth diode and a non-inverting input terminal connected to the shunt terminal 445r and the control terminal 445a.

[0456] With this configuration, through the negative feedback of operational amplifier 454, the voltage at the cathode of the fourth diode is the same as the reference voltage Vsns at shunt terminal 445r. Therefore, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted by adjusting the reference voltage Vsns.

[0457] Furthermore, in reference circuits 443a in power amplifier circuit 65 and 444a and 444g in power amplifier circuit 66, the third diode is a transistor 452n with approximately the same characteristics as the third bias transistor 423n and connected in a diode configuration. The fourth diode is a transistor 451n with approximately the same characteristics as the first bias transistor 421n and connected in a diode configuration. The fifth diode is a transistor 451p with approximately the same characteristics as the second bias transistor 421p and connected in a diode configuration. Moreover, the sixth diode is a transistor 452p with approximately the same characteristics as the fourth bias transistor 423p and connected in a diode configuration.

[0458] With this configuration, the temperature change of the sum of the forward voltages of the third to sixth diodes, i.e., the sum of the base-emitter voltages Vbe of transistors 452n and 452p, and transistors 451n and 451p, can be consistent with the temperature change of the sum of the base-emitter voltages Vbe of the first bias transistor 421n, the second bias transistor 421p, the third bias transistor 423n, and the fourth bias transistor 423p. Therefore, even under temperature variations, the deviation of the third bias voltage VB3 from the voltage suitable for the base bias of the third bias transistor 423n can be suppressed.

[0459] Furthermore, in reference circuits 443b in power amplifier circuit 65 and 444b and 444h in power amplifier circuit 66, the third diode is a transistor 452n that has substantially the same characteristics as the third bias transistor 423n and is diode-connected. The fourth diode is included in transistor 451n, which has substantially the same characteristics as the first bias transistor 421n. The fifth diode is transistor 451p, which has substantially the same characteristics as the second bias transistor 421p and is diode-connected. Moreover, the sixth diode is transistor 452p, which has substantially the same characteristics as the fourth bias transistor 423p and is diode-connected.

[0460] With this configuration, the temperature change of the sum of the forward voltages of the third to sixth diodes, i.e., the sum of the base-emitter voltages Vbe of transistors 452n and 452p, and transistors 451n and 451p, can be consistent with the temperature change of the sum of the base-emitter voltages Vbe of the first bias transistor 421n, the second bias transistor 421p, the third bias transistor 423n, and the fourth bias transistor 423p. Therefore, even under temperature variations, the deviation of the third bias voltage VB3 from the voltage suitable for the base bias of the third bias transistor 423n can be suppressed.

[0461] Furthermore, in reference circuit 443c in power amplifier circuit 65 and reference circuits 444c and 444i in power amplifier circuit 66, the third diode is a transistor 452n with substantially the same characteristics as the third bias transistor 423n and connected in a diode configuration. The fourth diode is a transistor 451n with substantially the same characteristics as the first bias transistor 421n and connected in a diode configuration. The fifth diode is included in transistor 451p, which has substantially the same characteristics as the second bias transistor 421p. Moreover, the sixth diode is a transistor 452p with substantially the same characteristics as the fourth bias transistor 423p and connected in a diode configuration.

[0462] With this configuration, the temperature change of the sum of the forward voltages of the third to sixth diodes, i.e., the sum of the base-emitter voltages Vbe of transistors 452n and 452p, and transistors 451n and 451p, can be consistent with the temperature change of the sum of the base-emitter voltages Vbe of the first bias transistor 421n, the second bias transistor 421p, the third bias transistor 423n, and the fourth bias transistor 423p. Therefore, even under temperature variations, the deviation of the third bias voltage VB3 from the voltage suitable for the base bias of the third bias transistor 423n can be suppressed.

[0463] Furthermore, in the reference circuits 443d, 443e, and 443f in power amplifier circuit 65 and the reference circuits 444d, 444e, 444f, 444j, 444k, and 444m in power amplifier circuit 66, the third diode is a transistor 452n that has substantially the same characteristics as the third bias transistor 423n and is diode-connected. The fourth diode is included in transistor 451n, which has substantially the same characteristics as the first bias transistor 421n. The fifth diode is included in transistor 451p, which has substantially the same characteristics as the second bias transistor 421p. Moreover, the sixth diode is transistor 452p, which has substantially the same characteristics as the fourth bias transistor 423p and is diode-connected.

[0464] With this configuration, the temperature change of the sum of the forward voltages of the third to sixth diodes, i.e., the sum of the base-emitter voltages Vbe of transistors 452n and 452p, and transistors 451n and 451p, can be consistent with the temperature change of the sum of the base-emitter voltages Vbe of the first bias transistor 421n, the second bias transistor 421p, the third bias transistor 423n, and the fourth bias transistor 423p. Therefore, even under temperature variations, the deviation of the third bias voltage VB3 from the voltage suitable for the base bias of the third bias transistor 423n can be suppressed.

[0465] Additionally, in power amplifier circuits 63 and 66, the replication circuit 511 includes a seventh diode. The seventh diode is thermally coupled to the amplifying transistor 501 and has an anode connected to the shunt terminal 445r in the reference circuit 442 or 444, and a grounded cathode.

[0466] With this configuration, the temperature of the seventh diode can be made approximately the same as the temperature of the amplifying transistor 501. Furthermore, a forward voltage corresponding to this temperature is generated in the seventh diode, and a forward current corresponding to this temperature flows. Therefore, in the reference circuit 442, the first bias voltage VB1 and the second bias voltage VB2 can be adjusted based on the forward voltage or forward current of the seventh diode. Additionally, in the reference circuit 444, the third bias voltage VB3 and the fourth bias voltage VB4 can be adjusted based on the forward voltage or forward current of the seventh diode. In other words, the forward voltage or forward current of the seventh diode corresponding to the temperature of the amplifying transistor 501 can be fed back to the base bias of the amplifying transistor 501.

[0467] In addition, in power amplifier circuits 63 and 66, the seventh diode is a seventh transistor 521 that has approximately the same characteristics as the amplifying transistor 501 and is diode-connected.

[0468] With this configuration, it is possible to achieve temperature variations in the base-emitter voltage Vbe of the seventh diode, i.e., temperature variations in the base-emitter voltage Vbe of the seventh transistor 521, that are close to the temperature variations in the base current of the amplifying transistor 501. Furthermore, it is possible to achieve temperature variations in the base current of the seventh diode, i.e., temperature variations in the base current of the seventh transistor 521, that are close to the temperature variations in the base current of the amplifying transistor 501. Therefore, the base bias of the amplifying transistor 501 can be accurately adjusted.

[0469] Additionally, in power amplifier circuits 63 and 66, the seventh diode is included in a seventh transistor 521 which has substantially the same characteristics as the amplifying transistor 501.

[0470] With this configuration, for example, by having the seventh transistor 521 perform the same amplification operation as the amplifying transistor 501, it is possible to achieve a temperature change in the forward voltage of the seventh diode, i.e., a temperature change in the base-emitter voltage Vbe of the seventh transistor 521, that is, a temperature change in the base-emitter voltage Vbe of the seventh transistor 521, that is, a temperature change in the forward current of the seventh diode, that is, a temperature change in the base current of the seventh transistor 521, that is, a temperature change in the base current of the seventh transistor 521, that is, a temperature change in the base current of the seventh transistor 521. Therefore, the base bias of the amplifying transistor 501 can be adjusted more accurately.

[0471] In addition, in the power amplifier circuits 61 to 66, the first bias transistor 421n and the second bias transistor 421p are bipolar transistors.

[0472] With this configuration, the bias of the amplifying transistor 501 can be adjusted by using current to control the first bias transistor 421n and the second bias transistor 421p.

[0473] Alternatively, in power amplifier circuits 61 to 66, the first bias transistor 421n and the second bias transistor 421p can be field-effect transistors.

[0474] With this configuration, the bias of the amplifying transistor 501 can be adjusted by using voltage to control the first bias transistor 421n and the second bias transistor 421p.

[0475] Additionally, power amplifier devices 11 and 11a include a first component 110 forming a first circuit 400, a second component 210 forming a second circuit 500, and an inter-component connection conductor 351a, a bonding wire 352a, or a bump electrically connecting the first circuit 400 and the second circuit 500. The second component 210 is mounted on the first component 110. The second circuit 500 includes an amplifying transistor 501 and a resistive element 502. The amplifying transistor 501 has a base that supplies an input signal RFin, amplifies the input signal RFin, and outputs it. The resistive element 502 has a first terminal and a second terminal electrically connected to the base of the amplifying transistor 501. The first circuit 400 includes a first biasing transistor 421n and a second biasing transistor 421p. The first biasing transistor 421n has a collector for applying a first voltage V1, a base for applying a first bias voltage VB1, and an emitter electrically connected to the first terminal of the resistive element 502, and supplying a bias current to the base of the amplifying transistor 501 through the resistive element 502. Furthermore, the second bias transistor 421p has an emitter electrically connected to the emitter of the first bias transistor 421n and the first terminal of the resistor element 502, a base to which a second bias voltage VB2 is applied, and a collector to which a second voltage V2, which is lower than the first voltage V1, is applied.

[0476] With this configuration, a current with a positive instantaneous value in the AC component of the base bias current Ieef, which flows from the Bout terminal 425 between the emitter of the first bias transistor 421n and the emitter of the second bias transistor 421p toward the resistor element 502, can flow from the base of the first bias transistor 421n through its emitter to the resistor element 502, and a current with a negative instantaneous value can flow from the resistor element 502 through the emitter of the second bias transistor 421p to its base. Therefore, the base bias circuits 401-406 in the power amplifier circuits 61-66 can be prevented from becoming cut off, and even if the amplitude of the AC component contained in the base bias current Ieef changes, the time-averaged variation of the base bias current Ieef can be suppressed. By suppressing the time-averaged variation of the base bias current Ieef, the variation of the operating point of the amplifier transistor 501 can be suppressed. Therefore, regardless of the amplitude of the RF current in the input signal RFin, the variation of the amplification rate of the amplifier transistor 501 can be suppressed. Thus, the variation of the operating point of the amplifier transistor 501 can be suppressed, and the linear degradation of the input-output relationship can be suppressed.

[0477] Additionally, the RF circuit module 300 includes a power amplifier 11 and a module substrate 310 having substrate-side electrodes 311 and 312. The first component 110 has a first conductor protrusion 116 connected to the substrate-side electrode 311 in the module substrate 310, and is flip-chip bonded to the module substrate 310 via the first conductor protrusion 116. The inter-component connection conductor 351a is a conductor formed on either the first component 110 or the second component 210, and electrically connects the first circuit 400 and the second circuit 500 without passing through the module substrate 310. Furthermore, the second component 210 has a second conductor protrusion 216 connected to the substrate-side electrode 312 in the module substrate 310.

[0478] Thus, by flip-chip bonding the first component 110 to the module substrate 310, there is no need for wire bonding pads and lead space, thereby reducing the overall size of the power amplifier device 11. Furthermore, by configuring the first component 110 to have a first conductor protrusion 116 connected to the substrate-side electrode 311 of the module substrate 310, and the second component 210 to have a second conductor protrusion 216 connected to the substrate-side electrode 312 of the module substrate 310, the first circuit 400 and the second circuit 500 can be electrically connected to the module substrate 310, respectively. Moreover, by configuring the first circuit 400 and the second circuit 500 to be electrically connected via the inter-component connection conductor 351a without passing through the module substrate 310, it is not necessary to form wiring on the module substrate 310 to connect the first circuit 400 and the second circuit 500. Therefore, the overall size of the power amplifier device 11 can be reduced. Furthermore, the heat generated by the amplifying transistor 501 and the like in the second circuit 500 formed in the second component 210 can be conducted through two paths: the heat dissipation path to the first component 110 and the heat dissipation path to the module substrate 310, thus enabling efficient heat dissipation and waste heat reduction. As a result, it is possible to realize a power amplifier device 11 that is miniaturized without being constrained by heat dissipation, or a small power amplifier device 11 with high heat dissipation.

[0479] Furthermore, in power amplifier devices 11 and 11a, the first component 110 is an elemental semiconductor component, and the second component 210 is a compound semiconductor component.

[0480] With this configuration, a high-performance amplifying transistor 501 can be formed in the second component 210 from a compound semiconductor such as GaAs. Furthermore, in the first component 110, an elemental semiconductor suitable for forming npn-type BJTs (Bipolar Junction Transistors), pnp-type BJTs, N-channel FETs, and P-channel FETs can be used, such as Si. Therefore, a first bias transistor 421n and a second bias transistor 421p can be easily formed in the first component 110.

[0481] Furthermore, in the power amplifier devices 11 and 11a, the thermal conductivity of the first component 110 is greater than that of the second component 210.

[0482] With this configuration, although the amount of heat dissipated by the amplifying transistor 501 is small in the second component 210 with lower thermal conductivity, the heat can be conducted to the first component 110 through the inter-component connection conductor 351a, thereby dissipating the heat in the first component 110. This effectively suppresses the temperature rise of the amplifying transistor 501.

[0483] In addition, in power amplifier devices 11 and 11a, the thickness of the second component 210 is thinner than the thickness of the first component 110.

[0484] In this way, by configuring the thinner second component 210 to be mounted on the thicker first component 110, the power amplifier device 11 can be configured as a stacked structure of two chips and the overall thickness can also be reduced.

[0485] Furthermore, the embodiments described above are intended to facilitate understanding of the present invention and are not intended to limit the scope of the invention. The present invention can be modified / improved without departing from its spirit, and the present invention also includes its equivalents. That is, any embodiment that incorporates the features of the present invention, and whose design modifications are appropriate to those skilled in the art, is also included within the scope of the present invention. For example, the elements, their configurations, materials, conditions, shapes, dimensions, etc., of each embodiment are not limited to the examples and can be appropriately modified. Additionally, each embodiment is exemplified; of course, different substitutions or combinations of the components shown in the embodiments are possible, and these embodiments are also included within the scope of the present invention as long as they contain the features of the present invention.

Claims

1. A power amplifier circuit, comprising: An amplifying transistor has a base to which a wireless frequency signal is supplied, amplifies the wireless frequency signal, and outputs it. The resistive element has a first terminal and a second terminal electrically connected to the base of the aforementioned amplifying transistor; The first bias transistor has a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to a first terminal of the aforementioned resistive element and supplying a bias current to the base of the aforementioned amplifying transistor through the aforementioned resistive element. as well as The second bias transistor has an emitter electrically connected to the emitter of the first bias transistor and the first terminal of the resistive element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied. It also has: The third bias transistor has a collector to which the first voltage is applied, an emitter connected to the base of the first bias transistor and to which the first bias voltage is applied, and a base to which a third bias voltage is applied for controlling the current flowing from the collector to the emitter. as well as The fourth bias transistor has a collector to which the second voltage is applied, an emitter connected to the base of the second bias transistor and to which the second bias voltage is applied, and a base to which a fourth bias voltage is applied for controlling the current flowing from the emitter to the collector. It also includes a reference circuit, which comprises: The third diode has an anode and a cathode that are connected to the base of the third bias transistor described above; The fourth diode has an anode and a cathode that are connected to the cathode of the third diode described above; The fifth diode has an anode and a cathode that are connected to the cathode of the fourth diode described above; The sixth diode has an anode connected to the cathode of the fifth diode and a cathode connected to the base of the fourth bias transistor; and A control terminal is used to control the current flowing from the cathode of the third diode to the anode of the sixth diode.

2. The power amplifier circuit according to claim 1 further comprises: A first application circuit is disposed between a power supply and the collector of the first bias transistor, and applies a first voltage lower than the voltage of the power supply to the collector of the first bias transistor; and The second application circuit is provided between the ground line and the collector of the second bias transistor, and applies a second voltage higher than that of the ground line to the collector of the second bias transistor.

3. The power amplifier circuit according to claim 1, wherein, The reference circuit described above also includes a shunt terminal connected to the cathode of the fourth diode, which shunts a portion of the current flowing from the cathode of the fourth diode to the anode of the fifth diode to an external circuit.

4. The power amplifier circuit according to claim 3, wherein, The aforementioned reference circuit also includes an operational amplifier having an inverting input terminal connected to the cathode of the fourth diode and a non-inverting input terminal connected to the shunt terminal and the control terminal.

5. The power amplifier circuit according to any one of claims 1 to 4, wherein, The third diode described above is a transistor with the same characteristics as the third bias transistor described above, and is connected in a diode configuration. The fourth diode described above is a transistor with the same characteristics as the first bias transistor described above, and is connected in a diode configuration. The fifth diode described above is a transistor with the same characteristics as the second bias transistor described above, and it is connected in a diode configuration. The sixth diode described above is a transistor with the same characteristics as the fourth bias transistor described above, and is connected in a diode configuration.

6. The power amplifier circuit according to any one of claims 1 to 4, wherein, The third diode described above is a transistor with the same characteristics as the third bias transistor described above, and is connected in a diode configuration. The aforementioned fourth diode is included in a transistor having the same characteristics as the aforementioned first biasing transistor. The fifth diode described above is a transistor with the same characteristics as the second bias transistor described above, and it is connected in a diode configuration. The sixth diode described above is a transistor with the same characteristics as the fourth bias transistor described above, and is connected in a diode configuration.

7. The power amplifier circuit according to any one of claims 1 to 4, wherein, The third diode described above is a transistor with the same characteristics as the third bias transistor described above, and is connected in a diode configuration. The fourth diode described above is a transistor with the same characteristics as the first bias transistor described above, and is connected in a diode configuration. The fifth diode is included in a transistor having the same characteristics as the second bias transistor. The sixth diode described above is a transistor with the same characteristics as the fourth bias transistor described above, and is connected in a diode configuration.

8. The power amplifier circuit according to any one of claims 1 to 4, wherein, The third diode described above is a transistor with the same characteristics as the third bias transistor described above, and is connected in a diode configuration. The aforementioned fourth diode is included in a transistor having the same characteristics as the aforementioned first biasing transistor. The fifth diode is included in a transistor having the same characteristics as the second bias transistor. The sixth diode described above is a transistor with the same characteristics as the fourth bias transistor described above, and is connected in a diode configuration.

9. The power amplifier circuit according to claim 3 or claim 4, wherein, The aforementioned external circuit includes a seventh diode. The seventh diode is thermally coupled to the amplifying transistor and has an anode connected to the shunt terminal in the reference circuit and a grounded cathode.

10. The power amplifier circuit according to claim 9, wherein, The seventh diode mentioned above is a transistor with the same characteristics as the aforementioned amplifying transistor and is connected in a diode configuration.

11. The power amplifier circuit according to claim 9, wherein, The aforementioned seventh diode is included in a transistor having the same characteristics as the aforementioned amplifying transistor.

12. The power amplifier circuit according to any one of claims 1 to 4, wherein, The first bias transistor and the second bias transistor mentioned above are both bipolar transistors.

13. The power amplifier circuit according to any one of claims 1 to 4, wherein, The first bias transistor and the second bias transistor mentioned above are both field-effect transistors. The gate of the aforementioned field-effect transistor is the base of either the first bias transistor or the second bias transistor. The source of the aforementioned field-effect transistor is the emitter of either the first bias transistor or the second bias transistor. The drain of the aforementioned field-effect transistor is the collector of the aforementioned first bias transistor or the aforementioned second bias transistor.

14. A power amplifier device, comprising: The first component has a first circuit. The second component has a second circuit; and A connecting conductor between components electrically connects the first circuit and the second circuit. The second component is installed on the first component. The second circuit mentioned above includes: An amplifying transistor having a base to which a radio frequency signal is supplied, amplifying the radio frequency signal and outputting it; and The resistive element has a first terminal and a second terminal electrically connected to the base of the aforementioned amplifying transistor. The first circuit mentioned above includes: A first bias transistor has a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to a first terminal of a resistive element and supplying a bias current to the base of the amplifying transistor through the resistive element; and The second bias transistor has an emitter electrically connected to the emitter of the first bias transistor and the first terminal of the resistive element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied.

15. The power amplifier device according to claim 14, wherein, The first component mentioned above is a component of an elemental semiconductor. The second component mentioned above is a component of a compound semiconductor.

16. The power amplifier device according to claim 14 or claim 15, wherein, The thermal conductivity of the first component is greater than that of the second component.

17. The power amplifier device according to claim 14 or 15, wherein, The thickness of the second component is thinner than that of the first component.

18. The power amplifier device according to claim 14 or 15, wherein, It has a substrate with electrodes. The first component has a first component-side conductor protrusion that connects to the electrode in the substrate, and is flip-chip bonded to the substrate via the first component-side conductor protrusion. The connecting conductor between the aforementioned components is a conductor formed on either the first component or the second component, and electrically connects the first circuit and the second circuit without passing through the aforementioned substrate. The second component has a second component side conductor protrusion that is connected to the electrode in the substrate.

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