Light Emitting Diode Structure

Abstract

The present application discloses a light emitting diode structure. The light emitting diode structure includes a light emitting unit, a first light wavelength conversion layer and a second light wavelength conversion layer. The light emitting unit includes a blue light chip for generating a first light beam. The first light wavelength conversion layer is disposed on the light emitting unit for converting a portion of the first light beam into a second light beam. The second light wavelength conversion layer is disposed on the first light wavelength conversion layer for converting another portion of the first light beam into a third light beam. The first light beam, the second light beam and the third light beam are superimposed to form a working light beam, the spectrum of the working light beam includes a first band between 350 nanometers and 660 nanometers and a second band between 660 nanometers and 1000 nanometers, and the power of the working light beam in the second band is greater than the power of the working light beam in the first band.

Description

Technical Field

[0001] The present application relates to the field of infrared lighting, and more specifically, to a light emitting diode structure. Background Art

[0002] Generally speaking, surveillance cameras use infrared lighting equipment containing infrared light emitting diodes as an auxiliary light source, and are paired with specific night vision lenses to enable continuous recording in low-light conditions. Since the naked eye cannot observe infrared light, providing a light source in the form of infrared light can increase the concealment of surveillance cameras.

[0003] However, when observing infrared lighting equipment on the market at close range, the naked eye can see dark red light, which limits the stealth of surveillance cameras. In addition, when infrared lighting equipment is used for photo supplementary lighting, even with a specific night vision lens, the collected photos still cannot reflect the actual color of the object, and can only take black and white photos.

[0004] Therefore, when infrared light emitting diodes are applied to infrared lighting equipment, there is still much room for improvement. Summary of the invention

[0005] The technical problem to be solved by the present application is to provide a light emitting diode structure to address the deficiencies of the prior art.

[0006] In order to solve the above-mentioned technical problems, one of the technical solutions adopted in the present application is to provide a light-emitting diode structure. The light-emitting diode structure includes a light-emitting unit, a first light wavelength conversion layer and a second light wavelength conversion layer. The light-emitting unit includes a blue light chip, and the light-emitting unit is used to generate a first light beam. The first light wavelength conversion layer is arranged on the light-emitting unit to convert a part of the first light beam into a second light beam. The second light wavelength conversion layer is arranged on the first light wavelength conversion layer to convert another part of the first light beam into a third light beam. The first light beam, the second light beam and the third light beam are superimposed to form a working light beam, and the spectrum of the working light beam includes a first wave band between 350 nanometers and 660 nanometers and a second wave band between 660 nanometers and 1000 nanometers, and the power of the working light beam in the second wave band is greater than the power of the working light beam in the first wave band.

[0007] In order to solve the above-mentioned technical problems, another technical solution adopted by the present application is to provide a method for manufacturing a light-emitting diode structure. The method for manufacturing a light-emitting diode structure includes the following steps: providing a light-emitting unit, the light-emitting unit includes a blue light chip, and the light-emitting unit generates a first light beam. A first light wavelength conversion layer and a second light wavelength conversion layer are arranged on the light-emitting unit, and the first light wavelength conversion layer is located between the light-emitting unit and the second light wavelength conversion layer. The first light wavelength conversion layer is used to convert a part of the first light beam into a second light beam, and the second light wavelength conversion layer is used to convert another part of the first light beam into a third light beam. The first light beam, the second light beam and the third light beam are superimposed to form a working light beam, and the spectrum of the working light beam includes a first band between 350 nanometers and 660 nanometers and a second band between 660 nanometers and 1000 nanometers, and the power of the working light beam in the second band is greater than the power of the working light beam in the first band.

[0008] According to some embodiments, a ratio of the power of the working light beam in the first wavelength band to the power of the working light beam in the second wavelength band is greater than 10%.

[0009] According to some embodiments, the color temperature of the operating light beam is 2000K to 3800K.

[0010] According to some embodiments, the first wavelength conversion layer includes a near-infrared phosphor, and the near-infrared phosphor is selected from (Y, Lu, Gd)3(Ga, Al, Sc)5O 12 :Cr、(Y,Lu,Gd)3(Ga,Al,Sc)5O 12 :Yb, (Li,Na,K)(B,Ga,Al)5(Mg,Ca,Sr,Ba,Zn)O8:Cr, (Li,Na,K,Rb,Cs,NH4)3(Al,Ga)F6:Cr and (Sc)BO3:Cr.

[0011] According to some embodiments, a fluorescence emission spectrum of the near-infrared phosphor has a peak between 700 nanometers and 1800 nanometers.

[0012] According to some embodiments, the first light wavelength conversion layer contains 200 to 400 parts by weight of a near-infrared phosphor, based on a total weight of 100 parts by weight of a light-transmitting resin in the first light wavelength conversion layer.

[0013] According to some embodiments, the first light wavelength conversion layer further contains 1 to 10 parts by weight of a red light phosphor, based on a total weight of 100 parts by weight of the light-transmitting resin in the first light wavelength conversion layer.

[0014] According to some embodiments, the second wavelength conversion layer contains a visible light phosphor, which is selected from (Y, Lu, Gd, Tb)3(Ga, Al)5O 12 :Ce、(La,Y)3Si6N 11 :Ce, (Sr,Ba,Mg)2SiO4:Eu, (Ba,Ca,Sr)Si2O2N2:Eu, α-SiAlON:Eu, β-SiAlON:Eu, (Sr,Ca)2Si5N8:Eu, NaCa2Al 13 O 22 :Eu, K6Ba4B8O 19 :Eu, Ba5B4O 10 F2:Eu and (Sr,Ca)AlSiN3:Eu.

[0015] According to some embodiments, based on the total weight of a light-transmitting resin in the second light wavelength conversion layer being 100 parts by weight, the second light wavelength conversion layer contains 5 parts by weight to 70 parts by weight of a visible light phosphor.

[0016] According to some embodiments, the visible light phosphor includes a red phosphor and a yellow phosphor.

[0017] According to some embodiments, based on 100 parts by weight of the total weight of the light-transmitting resin in the second wavelength conversion layer, the second wavelength conversion layer contains 5 to 60 parts by weight of yellow phosphor and 1 to 10 parts by weight of red phosphor.

[0018] According to some embodiments, a red light phosphor layer is disposed between the blue light chip and the first light wavelength conversion layer.

[0019] According to some embodiments, the red phosphor layer includes a red phosphor, which is selected from (Sr, Ca) AlSiN3:Eu, (Sr, Ca)2Si5N8:Eu, NaCa2Al 13 O 22 :Eu, K6Ba4B8O 19 :Eu and Ba5B4O 10 F2: The group formed by Eu.

[0020] According to some embodiments, the red phosphor layer contains 1 to 50 parts by weight of a red phosphor, based on a total weight of a light-transmitting resin in the red phosphor layer being 100 parts by weight.

[0021] According to some embodiments, the light emitting unit includes a red light chip, and a red light beam of the red light chip and a blue light beam of the blue light chip are mixed to generate the first light beam.

[0022] According to some embodiments, the light emitting diode structure further includes a light-transmitting layer, and the material of the light-transmitting layer includes: a silicon-based composition, an epoxy-silicon composition, or a mixture thereof.

[0023] According to some embodiments, the light-transmitting layer is disposed between the light-emitting unit and the first light wavelength conversion layer.

[0024] According to some embodiments, the refractive index of the light-transmitting layer is greater than or equal to the refractive index of the first light wavelength conversion layer, and the refractive index of the first light wavelength conversion layer is greater than or equal to the refractive index of the second light wavelength conversion layer.

[0025] According to some embodiments, the light-transmitting layer is disposed between the first light wavelength conversion layer and the second light wavelength conversion layer.

[0026] According to some embodiments, the refractive index of the first light wavelength conversion layer is greater than or equal to the refractive index of the light-transmitting layer, and the refractive index of the light-transmitting layer is greater than or equal to the refractive index of the second light wavelength conversion layer.

[0027] According to some embodiments, a refractive index of the first light wavelength conversion layer is greater than or equal to a refractive index of the second light wavelength conversion layer.

[0028] One of the beneficial effects of the present application is that the light-emitting diode structure provided by the present application can, through the technical solutions of "a first light wavelength conversion layer is used to convert a portion of the first light beam into a second light beam" and "a second light wavelength conversion layer is used to convert another portion of the first light beam into a third light beam", enable the light-emitting diode structure to have characteristics that meet application requirements.

[0029] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the drawings provided are only for reference and illustration and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a side cross-sectional view of the light emitting diode structure of the first embodiment of the present application.

[0031] Figure 2 It is a side cross-sectional view of a light emitting diode structure according to a second embodiment of the present application.

[0032] Figure 3 It is a side cross-sectional view of a light emitting diode structure according to the third embodiment of the present application.

[0033] Figure 4 It is a side cross-sectional view of a light emitting diode structure according to a fourth embodiment of the present application.

[0034] Figure 5 It is a side cross-sectional view of a light emitting diode structure according to a fifth embodiment of the present application.

[0035] Figure 6 It is a side cross-sectional view of a light emitting diode structure according to a sixth embodiment of the present application.

[0036] Figure 7 It is a side cross-sectional view of a light emitting diode structure according to the seventh embodiment of the present application.

[0037] Figure 8 It is a side cross-sectional view of a light emitting diode structure according to an eighth embodiment of the present application.

[0038] Fig. 9 It is a side cross-sectional view of a light emitting diode structure according to a ninth embodiment of the present application.

[0039] Fig.10 Spectrum diagram of the light emitting diode structure of Experimental Examples 1 to 9 of the present application.

[0040] Fig.11 This is a flow chart of the method for manufacturing the light emitting diode structure of the present application. DETAILED DESCRIPTION

[0041] The following is an explanation of the implementation methods of the "light-emitting diode structure" disclosed in the present application through specific embodiments. Those skilled in the art can understand the advantages and effects of the present application from the contents disclosed in this specification. The present application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present application. In addition, the drawings of the present application are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical content of the present application in detail, but the disclosed content is not intended to limit the scope of protection of the present application. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0042] The light-emitting diode structure of the present application can generate near-infrared light and visible light at the same time. When the light-emitting diode structure is used as the light source of the lighting device, it will not generate red light that can be clearly observed by the naked eye. Moreover, in the case of insufficient light source, an appropriate amount of visible light can achieve the effect of fill light and can truly reflect the actual color of the object. In this way, when the light-emitting diode structure of the present application is applied to a surveillance camera or other device using infrared light lighting equipment, the light-emitting diode structure can have characteristics that meet the requirements.

[0043] See also Figure 1 As shown, the present application provides a light emitting diode structure, which includes: a substrate unit 1, a light emitting unit 2, a reflection unit 3, a first light wavelength conversion layer 4 and a second light wavelength conversion layer 5.

[0044] The substrate unit 1 has a carrying surface 11 .

[0045] The light-emitting unit 2 is disposed on the supporting surface 11 of the substrate unit 1. The light-emitting unit 2 includes at least one blue light chip so that the light-emitting diode structure can have a better light-emitting effect. For example, the light-emitting unit 2 can be a single blue light chip, a combination of a blue light chip and a red light chip, or a white light chip-level light-emitting diode. However, the present application is not limited thereto.

[0046] The light emitting unit 2 is used to generate a first light beam. The first light beam can be a blue light beam or a mixed light of a blue light beam and other colored lights, so as to facilitate subsequent conversion into a second light beam and a third light beam of specific wavelengths through the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5. In other words, a spectrum of the first light beam contains at least a peak between 400 nanometers and 500 nanometers.

[0047] The reflective unit 3 is disposed on the supporting surface 11 of the substrate unit 1. The substrate unit 1 and the reflective unit 3 form a containing space. The light emitting unit 2, the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5 are all disposed in the containing space.

[0048] The reflective unit 3 surrounds the light emitting unit 2, and the reflective unit 3 can reflect the first light beam generated by the light emitting unit 2 to achieve the effect of converging light. In addition, the reflective unit 3 also surrounds the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5, and contacts the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5. The reflective unit 3 can reflect the second light beam and the third light beam to achieve the effect of converging light.

[0049] The first light wavelength conversion layer 4 is disposed on the light emitting unit 2, and the first light wavelength conversion layer 4 completely covers the supporting surface 11 of the substrate unit 1 and the light emitting unit 2, so the light emitting unit 2 is not exposed outside the first light wavelength conversion layer 4. The first light wavelength conversion layer 4 is a light-transmitting layer, and the material forming the first light wavelength conversion layer 4 includes a light-transmitting resin, such as a silicone resin, an epoxy resin or a combination thereof.

[0050] The first light wavelength conversion layer 4 is used to convert a portion of the first light beam into a second light beam. The first light wavelength conversion layer 4 contains at least one near-infrared light phosphor. When the first light beam passes through the first light wavelength conversion layer 4, a portion of the first light beam is converted into a second light beam by the near-infrared light phosphor. The second light beam is near-infrared light, that is, a spectrum of the second light beam contains at least one peak between 660 nanometers and 1000 nanometers.

[0051] Specifically, the near-infrared phosphor can be selected from (Y, Lu, Gd)3(Ga, Al, Sc)5O 12:Cr、(Y,Lu,Gd)3(Ga,Al,Sc)5O 12 :Yb, (Li, Na, K)(B, Ga, Al)5(Mg, Ca, Sr, Ba, Zn)O8:Cr, (Li, Na, K, Rb, Cs, NH4)3(Al, Ga)F6:Cr and (Sc)BO3:Cr. However, the present application is not limited thereto. In some preferred embodiments, the near-infrared phosphor is Y3Al5O 12 :Cr, whose fluorescence emission spectrum has a peak between 700 nm and 1800 nm. The total weight of the light-transmitting resin in the first light wavelength conversion layer 4 is 100 parts by weight, and the first light wavelength conversion layer 4 contains 200 parts by weight to 400 parts by weight of near-infrared fluorescent powder.

[0052] The second light wavelength conversion layer 5 is disposed on the first light wavelength conversion layer 4, and the second light wavelength conversion layer 5 completely covers the first light wavelength conversion layer 4. A top of the second light wavelength conversion layer 5 can be flush with a top of the reflective unit 3, or can be concave or convex. The second light wavelength conversion layer 5 is a light-transmitting layer, and the material forming the second light wavelength conversion layer 5 includes a light-transmitting resin, such as a silicone resin, an epoxy resin, or a combination thereof.

[0053] The second light wavelength conversion layer 5 is used to convert another part of the first light beam into a third light beam. The second light wavelength conversion layer 5 contains at least one visible light phosphor. When the first light beam passes through the second light wavelength conversion layer 5, a part of the first light beam is converted into a third light beam by the visible light phosphor. The third light beam is visible light, that is, a spectrum of the third light beam contains at least one peak between 350 nanometers and 660 nanometers.

[0054] Specifically, the visible light phosphor is selected from (Y, Lu, Gd, Tb)3(Ga, Al)5O 12 :Ce、(La,Y)3Si6N 11 :Ce, (Sr,Ba,Mg)2SiO4:Eu, (Ba,Ca,Sr)Si2O2N2:Eu, α-SiAlON:Eu, β-SiAlON:Eu, (Sr,Ca)2Si5N8:Eu, NaCa2Al 13 O 22 :Eu, K6Ba4B8O 19 :Eu, Ba5B4O 10 The group consisting of F2:Eu and (Sr,Ca)AlSiN3:Eu. However, the present application is not limited thereto.

[0055] In some embodiments, the total weight of the light-transmitting resin in the second light wavelength conversion layer 5 is 100 parts by weight, and the second light wavelength conversion layer 5 contains 5 to 70 parts by weight of visible light phosphor. In some preferred embodiments, the visible light phosphor may include only a yellow light phosphor, or include both a yellow light phosphor and a red light phosphor. In some preferred implementations, the total weight of the light-transmitting resin in the second light wavelength conversion layer 5 is 100 parts by weight, and the second light wavelength conversion layer 5 contains 5 to 60 parts by weight of yellow light phosphor, and 1 to 10 parts by weight of red light phosphor.

[0056] After the first light beam passes through the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5, the second light beam and the third light beam will be generated, and the unconverted first light beam and the second light beam and the third light beam formed after conversion will be superimposed to form a working light beam. This working light beam is the light beam actually emitted by the light emitting diode structure to the outside world.

[0057] It is worth noting that the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5 may contain more than one type of phosphor. That is, in addition to the near-infrared phosphor, the first light wavelength conversion layer 4 may also include a visible light phosphor, such as a red light phosphor. For example, the red light phosphor is selected from (Sr, Ca) AlSiN3:Eu, (Sr, Ca)2Si5N8:Eu, NaCa2Al 13 O 22 :Eu, K6Ba4B8O 19 :Eu and Ba5B4O 10 F2: A group consisting of Eu. However, the present application is not limited thereto. Taking the total weight of the light-transmitting resin in the first light wavelength conversion layer 4 as 100 parts by weight, the first light wavelength conversion layer 4 may contain 1 to 10 parts by weight of red light phosphor.

[0058] Similarly, in addition to the visible light phosphor, the second light wavelength conversion layer 5 may also include near-infrared light phosphor, so that, in addition to a portion of the first light beam being converted into a third light beam by the second light wavelength conversion layer 5, a portion of the second light beam may also be converted into a third light beam by the second light wavelength conversion layer 5. However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0059] In some embodiments, a refractive index of the first light wavelength conversion layer 4 and a refractive index of the second light wavelength conversion layer 5 are both greater than or equal to the refractive index of air. The refractive index of the first light wavelength conversion layer 4 may be the same as or different from the refractive index of the second light wavelength conversion layer 5. When the refractive index of the first light wavelength conversion layer 4 is different from the refractive index of the second light wavelength conversion layer 5, in some preferred embodiments, the refractive index of the first light wavelength conversion layer 4 is greater than the refractive index of the second light wavelength conversion layer 5.

[0060] [First embodiment]

[0061] See also Figure 1 As shown, the light emitting diode structure of the first embodiment includes: a substrate unit 1 , a light emitting unit 2 , a reflection unit 3 , a first light wavelength conversion layer 4 and a second light wavelength conversion layer 5 .

[0062] In the first embodiment, the light emitting unit 2 includes a blue light chip. The light emitting unit 2 is used to generate a first light beam, and therefore, the first light beam includes a blue light beam. The first light wavelength conversion layer 4 includes near-infrared phosphor, and the second light wavelength conversion layer 5 includes yellow phosphor and red phosphor. A portion of the first light beam is converted into a second light beam through the first light wavelength conversion layer 4, and another portion of the first light beam is converted into a third light beam through the second light wavelength conversion layer 5. Finally, the first light beam, the second light beam and the third light beam are superimposed to form a working light beam.

[0063] [Second embodiment]

[0064] See also Figure 2 As shown, the LED structure of the second embodiment is similar to the LED structure of the first embodiment, and the difference is that the LED structure further includes a light-transmitting layer 6 .

[0065] The light-transmitting layer 6 is disposed between the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5, and has the function of converging light to increase the light extraction efficiency of the first light beam and the second light beam. Specifically, the material of the light-transmitting layer 6 includes: a silicon-based composition, an epoxy silicon composition or a mixture thereof.

[0066] A refractive index of the light-transmitting layer 6 may be the same as or different from the refractive index of the first light wavelength conversion layer 4 or the refractive index of the second light wavelength conversion layer 5. In some embodiments, the refractive index of the first light wavelength conversion layer 4 is greater than or equal to the refractive index of the light-transmitting layer 6, and the refractive index of the light-transmitting layer 6 is greater than or equal to the refractive index of the second light wavelength conversion layer 5.

[0067] [Third embodiment]

[0068] See also Figure 3 As shown, the light emitting diode structure of the third embodiment is similar to the light emitting diode structure of the second embodiment, and the difference is that the light-transmitting layer 6 is disposed between the light-emitting unit 2 and the first light wavelength conversion layer 4, and the light-transmitting layer 6 completely covers the light-emitting unit 2. The light-transmitting layer 6 has the function of converging light to increase the light extraction efficiency of the first light beam.

[0069] In some embodiments, the refractive index of the light-transmitting layer 6 is greater than or equal to the refractive index of the first light wavelength conversion layer 4 , and the refractive index of the first light wavelength conversion layer 4 is greater than or equal to the refractive index of the second light wavelength conversion layer 5 .

[0070] In some other embodiments, the light-emitting diode structure may include a first light-transmitting layer and a second light-transmitting layer. The first light-transmitting layer is disposed between the light-emitting unit 2 and the first light wavelength conversion layer 4, and the first light-transmitting layer completely covers the light-emitting unit 2. The second light-transmitting layer is disposed between the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5. In addition, a refractive index of the first light-transmitting layer is greater than or equal to a refractive index of the first light wavelength conversion layer 4, a refractive index of the first light wavelength conversion layer 4 is greater than or equal to a refractive index of the second light-transmitting layer, and a refractive index of the second light-transmitting layer is greater than or equal to a refractive index of the second light wavelength conversion layer 5. However, the above example is only one feasible embodiment and is not intended to limit the present application.

[0071] [Fourth embodiment]

[0072] See also Figure 4 As shown, the LED structure of the fourth embodiment is similar to that of the first embodiment, except that the LED structure further includes a red phosphor layer 7, and the second wavelength conversion layer 5 only includes yellow phosphor.

[0073] The red phosphor layer 7 is a light-transmitting layer. The red phosphor layer 7 is mainly composed of a light-transmitting resin, such as a silicone resin, an epoxy resin or a combination thereof. The red phosphor layer 7 is disposed between the light-emitting unit 2 and the first light wavelength conversion layer 4, and the red phosphor layer 7 covers a light-emitting surface of the light-emitting unit 2. The red phosphor layer 7 contains at least one red phosphor. When the first light beam passes through the red phosphor layer 7, a portion of the first light beam will be converted into a red light beam, and a spectrum of the red light beam contains at least a peak between 550 nanometers and 750 nanometers.

[0074] Specifically, the red phosphor is selected from (Sr,Ca)AlSiN3:Eu, (Sr,Ca)2Si5N8:Eu, NaCa2Al 13 O 22 :Eu, K6Ba4B8O 19 :Eu and Ba5B4O 10 F2: A group consisting of Eu. The red phosphor layer 7 contains 1 to 50 parts by weight of red phosphor, based on the total weight of the light-transmitting resin in the red phosphor layer 7 being 100 parts by weight.

[0075] In the fourth embodiment, the red light phosphor layer 7 can first convert a portion of the first light beam into a red light beam. When the red light beam passes through the first light wavelength conversion layer 4, a portion of the red light beam can be converted into a second light beam. Compared with the blue light beam, the red light beam has a higher light conversion efficiency for the first light wavelength conversion layer 4. In addition, the other portion of the unconverted red light beam can directly contribute to the red light in the visible light to improve the visible light extraction efficiency of the light emitting diode.

[0076] In some embodiments, a refractive index of the red phosphor layer 7 is greater than or equal to that of the first wavelength conversion layer 4 , and the refractive index of the first wavelength conversion layer 4 is greater than or equal to that of the second wavelength conversion layer 5 .

[0077] [Fifth embodiment]

[0078] See also Figure 5 As shown, the LED structure of the fifth embodiment is similar to the LED structure of the fourth embodiment, and the difference is that the LED structure further includes a light-transmitting layer 6 .

[0079] The light-transmitting layer 6 in the fifth embodiment is similar to the light-transmitting layer 6 in the second embodiment. The light-transmitting layer 6 is disposed between the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5 , and thus will not be described in detail herein.

[0080] In some embodiments, a refractive index of the red light phosphor layer 7 is greater than or equal to the refractive index of the first light wavelength conversion layer 4 , the refractive index of the first light wavelength conversion layer 4 is greater than or equal to the refractive index of the light-transmitting layer 6 , and the refractive index of the light-transmitting layer 6 is greater than or equal to the refractive index of the second light wavelength conversion layer 5 .

[0081] In some other embodiments, the light-transmitting layer 6 may also be disposed between the light-emitting unit 2 and the first light wavelength conversion layer 4. Furthermore, the refractive index of the red phosphor layer 7 is greater than or equal to the refractive index of the light-transmitting layer 6, the refractive index of the light-transmitting layer 6 is greater than or equal to the refractive index of the first light wavelength conversion layer 4, and the refractive index of the first light wavelength conversion layer 4 is greater than or equal to the refractive index of the second light wavelength conversion layer 5.

[0082] [Sixth embodiment]

[0083] See also Figure 6 As shown, the LED structure of the sixth embodiment is similar to that of the first embodiment, except that the first light wavelength conversion layer 4 further includes red phosphor, and the second light wavelength conversion layer 5 only includes yellow phosphor.

[0084] In the sixth embodiment, the first light wavelength conversion layer 4 includes near-infrared phosphor and red phosphor. When the first light beam passes through the first light wavelength conversion layer 4, a portion of the first light beam can be converted into a second light beam, and another portion of the first light beam can be converted into a red light beam. Moreover, when the red light beam passes through the first light wavelength conversion layer 4, a portion of the red light beam can be converted into the second light beam. The other portion of the unconverted red light beam can directly contribute to the red light in the visible light to improve the visible light extraction efficiency of the light emitting diode.

[0085] The types of near-infrared phosphor and red phosphor are as described above and will not be described again. In some embodiments, the first wavelength conversion layer 4 may contain 200 to 400 parts by weight of near-infrared phosphor and 1 to 10 parts by weight of red phosphor.

[0086] [Seventh embodiment]

[0087] See also Figure 7 As shown, the LED structure of the seventh embodiment is similar to the LED structure of the first embodiment, and the difference is that the light emitting unit 2 further includes a red light chip 22 .

[0088] The red light chip 22 and the blue light chip 21 are disposed side by side on the carrying surface 11 . The blue light chip 21 and the red light chip 22 are respectively used to generate a blue light beam and a red light beam. The blue light beam and the red light beam are superimposed to form a first light beam.

[0089] In the seventh embodiment, when the blue light beam passes through the first light wavelength conversion layer 4, a part of the blue light beam can be converted into a second light beam. When the blue light beam passes through the second light wavelength conversion layer 5, another part of the blue light beam can be converted into a third light beam. When the red light beam passes through the first light wavelength conversion layer 4, a part of the red light beam can be converted into the second light beam. Compared with the blue light beam, the red light beam has a higher light conversion efficiency for the first light wavelength conversion layer 4. In addition, another part of the red light beam that has not been converted can directly contribute to the red light in the visible light to improve the visible light extraction efficiency of the light emitting diode.

[0090] [Eighth Embodiment]

[0091] See also Figure 8 As shown, the LED structure of the eighth embodiment is similar to the LED structure of the seventh embodiment, and the difference is that the LED structure further includes a light-transmitting layer 6 .

[0092] The light-transmitting layer 6 of the eighth embodiment is similar to the light-transmitting layer 6 of the second embodiment. The light-transmitting layer 6 is disposed between the first light wavelength conversion layer 4 and the second light wavelength conversion layer 5 , and thus will not be described in detail herein.

[0093] [Ninth Embodiment]

[0094] See also Fig. 9 As shown, the LED structure of the ninth embodiment is similar to the LED structure of the seventh embodiment, and the difference is that the LED structure further includes a light-transmitting layer 6 .

[0095] The light-transmitting layer 6 of the ninth embodiment is similar to the light-transmitting layer 6 of the third embodiment. The light-transmitting layer 6 is disposed between the light-emitting unit 2 and the first light wavelength conversion layer 4 , and the light-transmitting layer 6 completely covers the light-emitting unit 2 , so it is not described again.

[0096] [Light-emitting diode structure light-emitting efficiency test]

[0097] In order to verify that the light-emitting diode structure of the present application can generate near-infrared light and visible light at the same time, the present application prepared the light-emitting diode structures of Experimental Examples 1 to 9. The light-emitting diode structures in Experimental Examples 1 to 9 correspond to the light-emitting diode structures of the first embodiment to the ninth embodiment described above in sequence. The material ratios used to form the first light wavelength conversion layer, the second light wavelength conversion layer, the light-transmitting layer, and the red light phosphor layer in Experimental Examples 1 to 9 are listed in Table 1. In Table 1, unless otherwise specified, the units are in parts by weight.

[0098] A light-transmitting material forming the first light wavelength conversion layer includes a light-transmitting resin, near-infrared phosphor (NIR powder) and red phosphor (R powder). The amount of the near-infrared phosphor and the red phosphor added is 100 parts by weight relative to the total weight of the light-transmitting resin in the first light wavelength conversion layer. After the light-transmitting material is prepared, an appropriate amount of the light-transmitting material is placed on the substrate unit by dispensing. The amount of the light-transmitting material in grams is listed in Table 1.

[0099] A light-transmitting material forming the second wavelength conversion layer includes a light-transmitting resin, yellow phosphor (Y powder) and red phosphor. The amount of the yellow phosphor and the red phosphor added is 100 parts by weight relative to the total weight of the light-transmitting resin in the second wavelength conversion layer. After the light-transmitting material is prepared, an appropriate amount of the light-transmitting material is placed on the substrate unit by dispensing. The amount of the light-transmitting material in grams is listed in Table 1.

[0100] A light-transmitting material forming the light-transmitting layer includes a light-transmitting resin, and the amount of the light-transmitting resin in grams is listed in Table 1.

[0101] A light-transmitting material for forming a red phosphor layer includes a light-transmitting resin and a red phosphor. The amount of the red phosphor added is 100 parts by weight relative to the total weight of the light-transmitting resin in the red phosphor layer. After the light-transmitting material is prepared, an appropriate amount of the light-transmitting material is dispensed on the substrate unit. The amount of the light-transmitting material in grams is listed in Table 1.

[0102] Table 1

[0103]

[0104] In addition, various characteristic analyses are performed on the working light beams generated by the light emitting diode structures in Experimental Examples 1 to 9, and the characteristic results are shown in Table 2.

[0105] In Table 2, the first wave band corresponds to the visible light band, and the specific wavelength range is 350 nanometers to 660 nanometers. The second wave band corresponds to the near-infrared light band, and the specific wavelength range is 660 nanometers to 1000 nanometers. Therefore, "the luminous flux of the first wave band" refers to the total luminous flux of the working light beam in the visible light band, and "the luminous flux of the second wave band" refers to the total luminous flux of the working light beam in the near-infrared light band. "The power of the first wave band" refers to the power of the working light beam in the visible light band, and "the power of the second wave band" refers to the power of the working light beam in the near-infrared light band. In addition, "power ratio" refers to the ratio of "power of the first wave band" to "power of the second wave band".

[0106] Table 2

[0107]

[0108] According to the results in Table 2, the LED structure can generate a working light beam with a color temperature of 2000 K to 3800 K. Preferably, the LED structure can generate a working light beam with a color temperature of 2500 K to 3700 K. In other words, the LED structure of the present application can generate a warm white working light beam.

[0109] According to the results in Table 2, the power of the working light beam in the second band is greater than the power of the working light beam in the first band. Specifically, the power ratio of visible light to near infrared light in the working light beam can be greater than or equal to 10%. Preferably, the power ratio of visible light to near infrared light in the working light beam is 11% to 25%. In other words, the light emitting diode structure of the present application can generate a large amount of near infrared light as an infrared light source, and generate weak visible light, which can be used for indication or positioning.

[0110] According to the results of Experimental Examples 1 to 3, the color temperature of the working light beam may be 2900K to 3500K, and the power ratio of visible light to near infrared light in the working light beam may be greater than or equal to 11%.

[0111] According to the results of Experimental Examples 4 to 6, the color temperature of the working light beam can be 3500K to 3800K, and the power ratio of visible light to near-infrared light in the working light beam can be greater than or equal to 20%. Compared with Experimental Examples 1 to 3, the setting of the red phosphor layer (Experimental Examples 4 to 6) can greatly increase the power of visible light in the working light beam.

[0112] According to the results of Experimental Examples 7 to 9, the color temperature of the working light beam can be 2500K to 2700K, and the power ratio of visible light to near-infrared light in the working light beam can be greater than or equal to 13%. Compared with Experimental Examples 1 to 3, the setting of the red chip (Experimental Examples 7 to 9) can improve the power ratio of visible light to near-infrared light in the working light beam.

[0113] in addition, Fig.10 is the spectrum diagram of the light emitting diode structure of the above-mentioned experimental examples 1 to 9. Fig.10 It can be seen that the LED structure of the present application can generate visible light and near-infrared light at the same time. Users can select LED structures with different structural configurations (first to ninth embodiments) according to different usage requirements.

[0114] [Method for manufacturing light emitting diode structure]

[0115] Please refer to Fig.11 As shown, the method for manufacturing the light-emitting diode structure of the present application includes the following steps. Provide a substrate unit (step S1). Set a reflection unit on the substrate unit (step S2). Provide a light-emitting unit, and set the light-emitting unit on the substrate unit (step S3). The light-emitting unit includes a blue light chip, and the light-emitting unit is used to generate a first light beam. Set a first light wavelength conversion layer and a second light wavelength conversion layer on the light-emitting unit, and the first light wavelength conversion layer is located between the light-emitting unit and the second light wavelength conversion layer (step S4). The first light wavelength conversion layer is used to convert a portion of the first light beam into a second light beam, and the second light wavelength conversion layer is used to convert another portion of the first light beam into a third light beam.

[0116] [Beneficial Effects of Embodiments]

[0117] One of the beneficial effects of the present application is that the light-emitting diode structure provided by the present application can, through the technical solutions of "a first light wavelength conversion layer is used to convert a portion of the first light beam into a second light beam" and "a second light wavelength conversion layer is used to convert another portion of the first light beam into a third light beam", enable the light-emitting diode structure to have characteristics that meet application requirements.

[0118] The contents disclosed above are only optional feasible embodiments of the present application, and are not intended to limit the protection scope of the claims of the present application. Therefore, all equivalent technical changes made using the contents of the present application specification and drawings are included in the protection scope of the claims of the present application.

Claims

1. A light emitting diode structure, characterized in that: The light emitting diode structure comprises: a light emitting unit, the light emitting unit comprising a blue light chip, the light emitting unit being used to generate a first light beam; a first light wavelength conversion layer, disposed on the light emitting unit, for converting a portion of the first light beam into a second light beam; and a second light wavelength conversion layer, disposed on the first light wavelength conversion layer, for converting another portion of the first light beam into a third light beam; Among them, the unconverted first light beam, the second light beam and the third light beam are superimposed to form a working light beam, and the spectrum of the working light beam includes a first band between 350 nanometers and 660 nanometers and a second band between 660 nanometers and 1000 nanometers, and the power of the working light beam in the second band is greater than the power of the working light beam in the first band.

2. The light emitting diode structure according to claim 1, characterized in that: A ratio of the power of the working light beam in the first wavelength band to the power of the working light beam in the second wavelength band is greater than 10%.

3. The light emitting diode structure according to claim 1, characterized in that: The color temperature of the working light beam is 2000 K to 3800 K.

4. The light emitting diode structure according to claim 1, characterized in that: The first light wavelength conversion layer includes a near-infrared phosphor, which is selected from (Y, Lu, Gd)3(Ga, Al, Sc)5O 12 :Cr, (Y, Lu, Gd) 3 (Ga, Al, Sc) 5O 12 :Yb, Li, Na, K)(B, Ga, Al)5(Mg, Ca, Sr, Ba, Zn)O8:Cr, (Li, Na, K, Rb, Cs, NH4)3(Al, Ga)F6:Cr and (Sc)BO3:Cr.

5. The light emitting diode structure according to claim 4, characterized in that: The near-infrared fluorescent powder has a fluorescence emission spectrum with a peak between 700 nanometers and 1800 nanometers.

6. The light emitting diode structure according to claim 1, characterized in that: Taking the total weight of a light-transmitting resin in the first light wavelength conversion layer as 100 parts by weight, the first light wavelength conversion layer contains 200 parts by weight to 400 parts by weight of a near-infrared fluorescent powder.

7. The light emitting diode structure according to claim 1, characterized in that: Taking the total weight of a light-transmitting resin in the first light wavelength conversion layer as 100 parts by weight, the first light wavelength conversion layer contains 1 part by weight to 10 parts by weight of a red light fluorescent powder.

8. The light emitting diode structure according to claim 1, characterized in that: The second light wavelength conversion layer contains a visible light phosphor, and the visible light phosphor is selected from (Y, Lu, Gd, Tb)3(Ga, Al)5O 12 :Ce、(La,Y)3Si6N 11 :Ce, (Sr, Ba, Mg)2SiO4:Eu, (Ba, Ca, Sr)Si2O2N2:Eu, α-SiAlON:Eu, β-SiAlON:Eu, (Sr, Ca)2Si5N8:Eu, NaCa2Al 13 O 22 :Eu, K6Ba4B8O 19 :Eu, Ba5B4O 10 F2:Eu and (Sr, Ca)AlSiN3:Eu.

9. The light emitting diode structure according to claim 1, characterized in that: Taking the total weight of a light-transmitting resin in the second light wavelength conversion layer as 100 parts by weight, the second light wavelength conversion layer contains 5 parts by weight to 70 parts by weight of a visible light fluorescent powder.

10. The light emitting diode structure according to claim 9, characterized in that: The second light wavelength conversion layer contains a visible light phosphor, and the visible light phosphor includes a red light phosphor and a yellow light phosphor.

11. The light emitting diode structure according to claim 10, characterized in that: Taking the total weight of the light-transmitting resin in the second light wavelength conversion layer as 100 parts by weight, the second light wavelength conversion layer contains 5 parts by weight to 60 parts by weight of the yellow phosphor and 1 part by weight to 10 parts by weight of the red phosphor.

12. The light emitting diode structure according to claim 1, characterized in that: A red light phosphor layer is arranged between the blue light chip and the first light wavelength conversion layer.

13. The light emitting diode structure according to claim 12, characterized in that: The red phosphor layer includes a red phosphor, and the red phosphor is selected from (Sr, Ca) AlSiN3:Eu, (Sr, Ca) 2Si5N8:Eu, NaCa2Al 13 O 22 :Eu, K6Ba4B8O 19 :Eu and Ba5B4O 10 F2: The group formed by Eu.

14. The light emitting diode structure according to claim 12, characterized in that: Taking the total weight of a light-transmitting resin in the red phosphor layer as 100 parts by weight, the red phosphor layer contains 1 part by weight to 50 parts by weight of a red phosphor.

15. The light emitting diode structure according to claim 1, characterized in that: The light emitting unit includes a red light chip, and a red light beam of the red light chip is mixed with a blue light beam of the blue light chip to generate the first light beam.

16. The light emitting diode structure according to any one of claims 1 to 15, characterized in that: The light emitting diode structure further comprises a light-transmitting layer, and the material of the light-transmitting layer comprises: a silicon-based composition, an epoxy-silicon composition or a mixture thereof.

17. The light emitting diode structure according to claim 16, characterized in that: The light-transmitting layer is disposed between the light-emitting unit and the first light wavelength conversion layer.

18. The light emitting diode structure according to claim 17, characterized in that: The refractive index of the light-transmitting layer is greater than or equal to the refractive index of the first light wavelength conversion layer, and the refractive index of the first light wavelength conversion layer is greater than or equal to the refractive index of the second light wavelength conversion layer.

19. The light emitting diode structure according to claim 18, characterized in that: The refractive index of the light-transmitting layer is greater than the refractive index of the first light wavelength conversion layer, and the refractive index of the first light wavelength conversion layer is greater than the refractive index of the second light wavelength conversion layer.

20. The light emitting diode structure according to claim 16, characterized in that: The light-transmitting layer is disposed between the first light wavelength conversion layer and the second light wavelength conversion layer.

21. The light emitting diode structure according to claim 20, characterized in that: The refractive index of the first light wavelength conversion layer is greater than or equal to the refractive index of the light-transmitting layer, and the refractive index of the light-transmitting layer is greater than or equal to the refractive index of the second light wavelength conversion layer.

22. The light emitting diode structure according to claim 21, characterized in that: The refractive index of the first light wavelength conversion layer is greater than the refractive index of the light-transmitting layer, and the refractive index of the light-transmitting layer is greater than the refractive index of the second light wavelength conversion layer.

23. The light emitting diode structure according to claim 1, characterized in that: The refractive index of the first light wavelength conversion layer is greater than or equal to the refractive index of the second light wavelength conversion layer.

Images