Micro-led display substrate and manufacturing method thereof

Abstract

The application relates to a Micro-LED display substrate and a manufacturing method thereof. By arranging two adjacent Micro-LED units with a through opening, arranging a first insulating layer to fill the through opening and cover a first semiconductor layer of each Micro-LED unit, further depositing a metal material on the first insulating layer to form a first metal layer, the first metal layer fills the first opening and covers the sidewall and bottom surface of the first groove, the first metal layer is subjected to a patterning treatment to form a first conductive part and a first heat dissipation part on each Micro-LED unit, and the depth of the first groove exceeds the position where the active light-emitting layer is located, so that the first heat dissipation part covers the side surface of the active light-emitting layer. Meanwhile, a first heat dissipation protrusion is formed on the first heat dissipation part, and a recess is arranged at the top end of the second heat dissipation part, so as to improve the transfer accuracy and improve the heat dissipation performance.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a Micro-LED display substrate and a manufacturing method thereof. BACKGROUND

[0002] Early LED display screen pixels adopt red, green and blue three primary color LEDs combined together. Due to the large size of the package, the pixel pitch reaches about 20 mm. With the reduction of chip size and the improvement of packaging level, the pixel pitch of 3 mm display screen is very common in the market. Further, the chip size reaches about 100 μm, which is called mini LED in industry, and the pixel pitch can reach about 0.2 mm. The size of mini LED basically reaches the limit of the commonly used production technology of LED. In the case of comparable chip size and OLED, mini LED shows great advantages in brightness, contrast and reliability. Micro-LED further reduces the chip size to below 50 μm. Due to the small size, high integration and self-luminous characteristics of Micro-LED, compared with LCD and OLED, Micro-LED display panel has the advantages of high brightness, high resolution, high contrast, low energy consumption, long service life, fast response speed and high thermal stability. However, the existing Micro-LED display substrate has complex manufacturing process and poor heat dissipation performance. SUMMARY

[0003] The purpose of the present application is to overcome the shortcomings of the prior art, and to provide a Micro-LED display substrate and a manufacturing method thereof.

[0004] To achieve the above purpose, the present application provides a manufacturing method of a Micro-LED display substrate, comprising the following steps:

[0005] Step (1): providing a growth substrate, and sequentially forming a first semiconductor layer, a light-emitting functional layer, a second semiconductor layer and a light-transmitting conductive layer on the growth substrate.

[0006] Step (2): then providing a first transfer substrate, and bonding the light-transmitting conductive layer on the growth substrate to the first transfer substrate. Then, the first semiconductor layer, the light-emitting functional layer, the second semiconductor layer and the light-transmitting conductive layer are subjected to etching treatment to form a plurality of Micro-LED units arranged in a matrix. Adjacent two Micro-LED units have a through opening therebetween.

[0007] Step (3): then depositing a heat-conducting insulating material to form a first insulating layer, which fills the through opening and covers the first semiconductor layer of each Micro-LED unit.

[0008] Step (4): Then, the first insulating layer is etched to form a first opening exposing the first semiconductor layer of each Micro-LED unit and a first groove in the first insulating layer between two adjacent Micro-LED units, the depth of the first groove exceeding the position where the light-emitting functional layer is located.

[0009] Step (5): Then, a metal material is deposited on the first insulating layer to form a first metal layer, the first metal layer filling the first opening and covering the sidewall and bottom surface of the first groove;

[0010] Step (6): Then, the first metal layer is patterned to form a first conductive part and a first heat dissipation part on each Micro-LED unit, the first conductive part being electrically connected to the first semiconductor layer, and the first heat dissipation part covering the sidewall of the light-emitting functional layer of each Micro-LED unit.

[0011] Step (7): Then, a metal material is deposited on the first heat dissipation part to form a second metal layer, and the second metal layer is patterned to form a first heat dissipation protrusion on the first heat dissipation part, and then the first insulating layer is cut to separate two adjacent Micro-LED units.

[0012] Step (8): Then, an array substrate is provided, the array substrate comprising a plurality of thin film transistor setting areas and a plurality of Micro-LED mounting areas, a thin film transistor being arranged in each thin film transistor setting area, and a second heat dissipation part being arranged in each Micro-LED mounting area, the top end of the second heat dissipation part being provided with a recess.

[0013] Step (9): A plurality of Micro-LED units are transferred to the corresponding Micro-LED mounting areas of the array substrate, so that each second heat dissipation part is in thermal contact with the corresponding first heat dissipation part, and the first heat dissipation protrusion is embedded in the recess.

[0014] As a preferred technical solution, in the step (1), the growth substrate is one of a silicon substrate, a silicon carbide substrate, a sapphire substrate and a gallium nitride substrate, a buffer layer is grown on the growth substrate before the first semiconductor layer is grown, and the first semiconductor layer and the second semiconductor layer are one of gallium nitride, aluminum gallium nitride, gallium arsenide and gallium phosphide.

[0015] As a preferred technical scheme, in the step (2), a layer of adhesive material is arranged on the first transfer substrate, and then the light-transmitting conductive layer is adhered to the first transfer substrate by the adhesive material, and the etching treatment is performed by a wet etching process or a dry etching process.

[0016] As a preferred technical scheme, in the step (3), the material of the first insulating layer is one of aluminum oxide, aluminum nitride, silicon carbide and silicon nitride, and the first insulating layer is formed by a chemical vapor deposition process or an atomic layer deposition process.

[0017] As a preferred technical scheme, in the step (5), the material of the first metal layer is one of copper, aluminum, silver and nickel, and the first metal layer is prepared by one or more of a magnetron sputtering process, a thermal evaporation process, an electroless plating process, an electroplating process and an electron beam evaporation process, and the part of the first metal layer located in the first recess is conformal to the first recess.

[0018] As a preferred technical scheme, in the step (6), the first insulating layer is cut by a laser or a cutter.

[0019] As a preferred technical scheme, in the step (7), each Micro-LED mounting area of the array substrate is processed by a hole opening process, and then a metal material is filled to form the second heat dissipation part.

[0020] As a preferred technical scheme, the present application further provides a Micro-LED display substrate formed by the manufacturing method.

[0021] The present application has the following beneficial effects:

[0022] By setting the adjacent two Micro-LED units have a through opening, setting the first insulating layer fills the through opening and covers the first semiconductor layer of each Micro-LED unit, and then depositing a metal material on the first insulating layer to form a first metal layer, the first metal layer fills the first opening and covers the sidewall and bottom surface of the first groove, and the first metal layer is patterned to form a first conductive part and a first heat dissipation part on each Micro-LED unit, and by setting the depth of the first groove exceeds the position where the light-emitting functional layer is located, and then the first heat dissipation part covers the side surface of the light-emitting functional layer, the structure can prevent the light emitted by the Micro-LED unit from being emitted from the side surface of the Micro-LED unit, thereby improving the light emission effect; at the same time, since the first heat dissipation part covers the side surface of the light-emitting functional layer and the surface of the first semiconductor layer, heat can be quickly dissipated. And in the transfer process, a second heat dissipation part is arranged in each Micro-LED mounting area, and then each second heat dissipation part is in thermal contact with the corresponding first heat dissipation part, thereby facilitating heat extraction, thereby improving the stability and service life of the Micro-LED display substrate.

[0023] At the same time, since the first heat dissipation protrusion is formed on the first heat dissipation part, and a recess is arranged at the top end of the second heat dissipation part, and then in the subsequent transfer process, the first heat dissipation protrusion is embedded in the recess, and due to the arrangement of the first heat dissipation protrusion and the recess, the transfer alignment of each Micro-LED unit is facilitated, and the transfer efficiency and yield of the Micro-LED unit are effectively improved, and at the same time, since the first heat dissipation protrusion is embedded in the recess, the heat dissipation performance of the Micro-LED display substrate is further improved, that is, the transfer accuracy and heat dissipation performance are improved at the same time. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 The structure schematic diagram of sequentially forming a first semiconductor layer, a light-emitting functional layer, a second semiconductor layer and a light-transmitting conductive layer on a growth substrate in the embodiment of the application is shown.

[0025] Figure 2 The structure schematic diagram of forming a plurality of Micro-LED units arranged in a matrix on a first transfer substrate in the embodiment of the application is shown.

[0026] Figure 3 The structure schematic diagram of forming a first insulating layer in the embodiment of the application is shown.

[0027] Figure 4 The structure schematic diagram of etching the first insulating layer to form a first opening and a first groove in the embodiment of the application is shown.

[0028] Figure 5 The diagram shown is a schematic diagram of the structure for forming the first metal layer in an embodiment of the present invention.

[0029] Figure 6 The diagram shown is a schematic representation of the structure in an embodiment of the present invention, in which the first metal layer is patterned to form a first conductive portion and a first heat dissipation portion.

[0030] Figure 7 The diagram shows a schematic representation of a structure in which the second metal layer is patterned to form a first heat dissipation protrusion in an embodiment of the present invention.

[0031] Figure 8 The diagram shown is a structural schematic of an array substrate provided in an embodiment of the present invention.

[0032] Figure 9 The diagram shows a structural schematic of transferring multiple Micro-LED units to the array substrate in an embodiment of the present invention.

[0033] Explanation of reference numerals in the attached figures

[0034] The system comprises: a growth substrate 100, a first semiconductor layer 101, a light-emitting functional layer 102, a second semiconductor layer 103, a light-transmitting conductive layer 104, a transfer substrate 200, a Micro-LED unit 201, a through-hole 202, a first insulating layer 203, a first opening 204, a first groove 205, a first metal layer 300, a first conductive portion 301, a first heat dissipation portion 302, a first heat dissipation protrusion 303, an array substrate 400, a thin-film transistor mounting area 401, a Micro-LED mounting area 402, a second heat dissipation portion 403, a recess 404, and a thin-film transistor 500. Detailed Implementation

[0035] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0036] like Figures 1-8 As shown, this embodiment provides a method for manufacturing a Micro-LED display substrate, including the following steps:

[0037] In specific embodiments, such as Figure 1 As shown, in step (1), a growth substrate 100 is provided, and a first semiconductor layer 101, a light-emitting functional layer 102, a second semiconductor layer 103 and a light-transmitting conductive layer 104 are sequentially formed on the growth substrate.

[0038] In specific embodiments, in the step (1), the growth substrate 100 is one of a silicon substrate, a silicon carbide substrate, a sapphire substrate and a gallium nitride substrate, before growing the first semiconductor layer 101, a buffer layer (not shown) is first grown on the growth substrate 100, the presence of the buffer layer can facilitate the growth of subsequent semiconductor layers, avoid lattice mismatch, and thus improve the growth quality of the first semiconductor layer 101, the light-emitting functional layer 102 and the second semiconductor layer 103.

[0039] In specific embodiments, the materials of the first semiconductor layer 101 and the second semiconductor layer 103 are not limited, i.e. one of gallium nitride, aluminum gallium nitride, gallium arsenide, gallium phosphide, the light-emitting functional layer 102 can be a single quantum well layer or a multi-quantum well layer, and the first semiconductor layer 101, the light-emitting functional layer 102 and the second semiconductor layer 103 can be grown by molecular beam epitaxy technology. The light-transmitting conductive layer 104 can be a transparent oxide conductive layer, specifically an ITO layer, which can be formed by a magnetron sputtering process.

[0040] In specific embodiments, as shown in FIG. 2B, in step (2), a first transfer substrate 200 is then provided, the light-transmitting conductive layer 104 on the growth substrate 100 is attached to the first transfer substrate 200, and then the growth substrate 100 is removed. The first semiconductor layer 101, the light-emitting functional layer 102, the second semiconductor layer 103 and the light-transmitting conductive layer 104 are then etched to form a plurality of Micro-LED units 201 arranged in a matrix, and adjacent two Micro-LED units 201 have a through opening 202 therebetween. Figure 2

[0041] In specific embodiments, in the step (2), an adhesive material layer (not shown) is provided on the first transfer substrate 200, and then the light-transmitting conductive layer 104 is adhered to the first transfer substrate 200 by the adhesive material layer, and the etching process is carried out by a wet etching process or a dry etching process.

[0042] In more specific embodiments, the adhesive material layer is a temporary bonding layer which can lose adhesion under ultraviolet light irradiation or heating conditions, thereby facilitating peeling.

[0043] In specific embodiments, as shown in FIG. 2B, in step (3), a thermally conductive insulating material is then deposited to form a first insulating layer 203, the first insulating layer 203 fills the through opening 202 and covers the first semiconductor layer 101 of each Micro-LED unit 201. Figure 3

[0044] ​​In a specific embodiment, in step (3), the material of the first insulating layer 203 is one of aluminum oxide, aluminum nitride, silicon carbide, and silicon nitride, and the first insulating layer 203 is formed by chemical vapor deposition or atomic layer deposition.

[0045] In a more specific embodiment, the first insulating layer 203 is an aluminum oxide layer, which is then formed by atomic layer deposition. In this application, the provision of the first insulating layer 203 facilitates electrical insulation between the subsequently formed first heat dissipation part and the Micro-LED unit 201, thereby ensuring the normal operation of the Micro-LED unit 201.

[0046] In specific embodiments, such as Figure 4 As shown, in step (4), the first insulating layer 203 is then etched to form a first opening 204 that exposes the first semiconductor layer 101 of each Micro-LED unit 201, and a first groove 205 is formed in the first insulating layer 203 between two adjacent Micro-LED units 201, the depth of the first groove 205 exceeding the position of the light-emitting functional layer 102.

[0047] In a specific embodiment, the first opening 204 and the first groove 205 are formed by wet etching or dry etching.

[0048] In specific embodiments, such as Figure 5 As shown, in step (5), a metal material is then deposited on the first insulating layer to form a first metal layer 300, which fills the first opening 204 and covers the sidewalls and bottom surface of the first groove 205.

[0049] In a specific embodiment, in step (5), the material of the first metal layer 300 is one of copper, aluminum, silver and nickel. The first metal layer 300 is prepared by one or more processes of magnetron sputtering, thermal evaporation, chemical plating, electroplating and electron beam evaporation. The portion of the first metal layer 300 located in the first groove 205 is conformal to the first groove 205.

[0050] In a more specific embodiment, the first metal layer 300 is made of copper and is formed by electroplating or vapor deposition.

[0051] In specific embodiments, such as Figure 6As shown, in step (6), the first metal layer 300 is then patterned to form a first conductive part 301 and a first heat dissipation part 302 on each Micro-LED unit, the first conductive part 301 is electrically connected with the first semiconductor layer 101, and the first heat dissipation part 302 covers the sidewall of the light-emitting functional layer 102 of each Micro-LED unit 201.

[0052] In specific embodiments, the patterning is performed by a wet etching process or a dry etching process.

[0053] In specific embodiments, as shown in FIG. 6, in step (7), a second metal layer is formed on the first heat dissipation part 302 by depositing a metal material on the first heat dissipation part 302, and the second metal layer is then patterned to form a first heat dissipation protrusion 303 on the first heat dissipation part 302, and the first insulating layer 203 is then cut to separate two adjacent Micro-LED units 201. Figure 7

[0054] In specific embodiments, the material of the second metal layer is one of copper, aluminum, silver, and nickel, and the second metal layer is prepared by one or more of a magnetron sputtering process, a thermal evaporation process, an electroless plating process, an electroplating process, and an electron beam evaporation process. In more specific embodiments, the material of the second metal layer is copper, and the second metal layer is formed by an electroplating process or an evaporation process.

[0055] In specific embodiments, the second metal layer is patterned by a wet etching process or a dry etching process to form the first heat dissipation protrusion 303 on the first heat dissipation part 302, and the first insulating layer 203 is then cut by a laser or a knife.

[0056] In specific embodiments, as shown in FIG. 6, in step (8), an array substrate 400 is provided, the array substrate 400 includes a plurality of thin film transistor arrangement areas 401 and a plurality of Micro-LED mounting areas 402, a thin film transistor 500 is arranged in each thin film transistor arrangement area 401, and a second heat dissipation part 403 is arranged in each Micro-LED mounting area 402, and a recess 404 is arranged at the top end of the second heat dissipation part 403. Figure 8

[0057] In specific embodiments, in step (7), the second heat dissipation part 403 is formed by opening each Micro-LED mounting area 402 of the array substrate 400 and then filling a metal material, and a back etching process is performed on the top surface of the second heat dissipation part 403 after the filling step to form the recess 404. ​​

[0058] In a more specific embodiment, the thin film transistor 500 comprises a gate, a gate insulating layer, a semiconductor layer, a source and a drain.

[0059] In a more specific embodiment, the second heat dissipation part 403 is formed by a copper electroplating process.

[0060] In a specific embodiment, as shown in FIG. 9, in step (9), the plurality of Micro-LED units 201 are respectively transferred to the corresponding Micro-LED mounting areas 402 in the array substrate 400, so that each second heat dissipation part 403 is in thermal contact 302 with the corresponding first heat dissipation part, and the first heat dissipation protrusion 303 is embedded in the recess 404. Figure 9

[0061] In a specific embodiment, the first conductive part 301 of each Micro-LED unit 201 is electrically connected to the drain of the corresponding thin film transistor.

[0062] In a more preferred embodiment, in a subsequent preparation process, the light-transmissive conductive layer 104 of each Micro-LED unit 201 is electrically led out, and the Micro-LED unit 201 is encapsulated.

[0063] In a specific embodiment, as shown in FIG. 9, in step (9), the plurality of Micro-LED units 201 are respectively transferred to the corresponding Micro-LED mounting areas 402 in the array substrate 400, so that each second heat dissipation part 403 is in thermal contact 302 with the corresponding first heat dissipation part, and the first heat dissipation protrusion 303 is embedded in the recess 404. Figure 9

[0064] In other preferred technical solutions, the present application provides a manufacturing method of a Micro-LED display substrate, comprising the following steps:

[0065] Step (1): providing a growth substrate, and sequentially forming a first semiconductor layer, a light-emitting functional layer, a second semiconductor layer and a light-transmissive conductive layer on the growth substrate.

[0066] Step (2): then providing a first transfer substrate, and bonding the light-transmissive conductive layer on the growth substrate to the first transfer substrate, and then performing etching treatment on the first semiconductor layer, the light-emitting functional layer, the second semiconductor layer and the light-transmissive conductive layer to form a plurality of Micro-LED units arranged in a matrix, and adjacent two Micro-LED units have a through opening therebetween.

[0067] Step (3): then depositing a heat-conducting insulating material to form a first insulating layer, which fills the through opening and covers the first semiconductor layer of each Micro-LED unit.

[0068] ​​Step (4): then etching the first insulating layer to form a first opening exposing the first semiconductor layer of each Micro-LED unit, and a first groove in the first insulating layer between two adjacent Micro-LED units, the depth of the first groove exceeding the position where the light-emitting functional layer is located.

[0069] Step (5): then depositing a metal material on the first insulating layer to form a first metal layer, the first metal layer filling the first opening and covering the sidewall and bottom surface of the first groove;

[0070] Step (6): then patterning the first metal layer to form a first conductive part and a first heat dissipation part on each Micro-LED unit, the first conductive part being electrically connected with the first semiconductor layer, and the first heat dissipation part covering the sidewall of the light-emitting functional layer of each Micro-LED unit;

[0071] Step (7): then depositing a metal material on the first heat dissipation part to form a second metal layer, and patterning the second metal layer to form a first heat dissipation protrusion on the first heat dissipation part, and then cutting the first insulating layer to separate two adjacent Micro-LED units;

[0072] Step (8): then providing an array substrate, the array substrate comprising a plurality of thin film transistor setting areas and a plurality of Micro-LED mounting areas, a thin film transistor being arranged in each thin film transistor setting area, and a second heat dissipation part being arranged in each Micro-LED mounting area, a recess being arranged at the top end of the second heat dissipation part;

[0073] Step (9): transferring a plurality of Micro-LED units to the corresponding Micro-LED mounting areas of the array substrate respectively, so that each second heat dissipation part is in thermal contact with the corresponding first heat dissipation part, and the first heat dissipation protrusion is embedded into the recess.

[0074] In a more preferred technical solution, in the step (1), the growth substrate is one of a silicon substrate, a silicon carbide substrate, a sapphire substrate and a gallium nitride substrate, a buffer layer is grown on the growth substrate before growing the first semiconductor layer, and the first semiconductor layer and the second semiconductor layer are one of gallium nitride, aluminum gallium nitride, gallium arsenide and gallium phosphide.

[0075] In a more preferable technical solution, in the step (2), a layer of adhesive material is arranged on the first transfer substrate, and then the light-transmissive conductive layer is adhered to the first transfer substrate by the adhesive material, and the etching treatment is performed by a wet etching process or a dry etching process.

[0076] In a more preferable technical solution, in the step (3), the material of the first insulating layer is one of aluminum oxide, aluminum nitride, silicon carbide, and silicon nitride, and the first insulating layer is formed by a chemical vapor deposition process or an atomic layer deposition process.

[0077] In a more preferable technical solution, in the step (5), the material of the first metal layer is one of copper, aluminum, silver, and nickel, and the first metal layer is prepared by one or more of a magnetron sputtering process, a thermal evaporation process, an electroless plating process, an electroplating process, and an electron beam evaporation process, and the part of the first metal layer located in the first recess is conformal to the first recess.

[0078] In a more preferable technical solution, in the step (6), the first insulating layer is cut by a laser or a cutter.

[0079] In a more preferable technical solution, in the step (7), each of the Micro-LED mounting areas of the array substrate is processed by a hole opening process, and then a metal material is filled to form the second heat dissipation part.

[0080] In a more preferable technical solution, the present application further provides a Micro-LED display substrate formed by the above manufacturing method.

[0081] The present application has the following advantages:

[0082] By setting the adjacent two Micro-LED units have a through opening, setting the first insulating layer fills the through opening and covers the first semiconductor layer of each Micro-LED unit, and then depositing a metal material on the first insulating layer to form a first metal layer, the first metal layer fills the first opening and covers the sidewall and bottom surface of the first groove, the first metal layer is patterned to form a first conductive part and a first heat dissipation part on each Micro-LED unit, and by setting the depth of the first groove exceeds the position where the light-emitting functional layer is located, and then the first heat dissipation part covers the side surface of the light-emitting functional layer, the structure can prevent the light emitted by the Micro-LED unit from being emitted from the side surface of the Micro-LED unit, thereby improving the light emission effect; at the same time, since the first heat dissipation part covers the side surface of the light-emitting functional layer and the surface of the first semiconductor layer, heat can be dissipated quickly. And in the transfer process, a second heat dissipation part is arranged in each Micro-LED mounting area, and then each second heat dissipation part is in thermal contact with the corresponding first heat dissipation part, thereby facilitating heat extraction, thereby improving the stability and service life of the Micro-LED display substrate.

[0083] At the same time, since the first heat dissipation protrusion is formed on the first heat dissipation part, and a recess is arranged at the top end of the second heat dissipation part, and then in the subsequent transfer process, the first heat dissipation protrusion is embedded in the recess, due to the arrangement of the first heat dissipation protrusion and the recess, the transfer alignment of each Micro-LED unit is facilitated, the transfer efficiency and yield of the Micro-LED unit are effectively improved, and at the same time, since the first heat dissipation protrusion is embedded in the recess, the heat dissipation performance of the Micro-LED display substrate is further improved, that is, the transfer accuracy and heat dissipation performance are improved at the same time.

[0084] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not used to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical idea disclosed by the present application should be covered by the claims of the present application.

Claims

1. A method for manufacturing a Micro-LED display substrate, comprising the following steps: Step (1) : providing a growth substrate, and sequentially forming a first semiconductor layer, a light-emitting functional layer, a second semiconductor layer, and a light-transmitting conductive layer on the growth substrate; Step (2) : then providing a first transfer substrate, and adhering the light-transmitting conductive layer on the growth substrate to the first transfer substrate, and then performing etching treatment on the first semiconductor layer, the light-emitting functional layer, the second semiconductor layer, and the light-transmitting conductive layer to form a plurality of Micro-LED units arranged in a matrix, and two adjacent Micro-LED units have a through opening therebetween; Step (3) : then depositing a heat-conducting insulating material to form a first insulating layer, the first insulating layer fills the through opening and covers the first semiconductor layer of each Micro-LED unit; Step (4) : then performing etching treatment on the first insulating layer to form a first opening hole exposing the first semiconductor layer of each Micro-LED unit, and a first groove is formed in the first insulating layer between two adjacent Micro-LED units, the depth of the first groove exceeds the position where the light-emitting functional layer is located; Step (5) : then depositing a metal material on the first insulating layer to form a first metal layer, the first metal layer fills the first opening hole and covers the sidewall and bottom surface of the first groove; Step (6) : then performing patterning treatment on the first metal layer to form a first conductive part and a first heat-dissipating part on each Micro-LED unit, the first conductive part is electrically connected with the first semiconductor layer, and the first heat-dissipating part covers the sidewall of the light-emitting functional layer of each Micro-LED unit; Step (7) : then depositing a metal material on the first heat-dissipating part to form a second metal layer, and performing patterning treatment on the second metal layer to form a first heat-dissipating protrusion on the first heat-dissipating part, and then performing cutting treatment on the first insulating layer to separate two adjacent Micro-LED units; Step (8) : then providing an array substrate, the array substrate comprises a plurality of thin film transistor setting areas and a plurality of Micro-LED mounting areas, a thin film transistor is arranged in each thin film transistor setting area, and a second heat-dissipating part is arranged in each Micro-LED mounting area, and a recess is arranged at the top end of the second heat-dissipating part; Step (9) : transferring a plurality of Micro-LED units to the corresponding Micro-LED mounting areas of the array substrate respectively, so that each second heat-dissipating part is in thermal contact with the corresponding first heat-dissipating part, and the first heat-dissipating protrusion is embedded into the recess. 2.The method for manufacturing a Micro-LED display substrate according to claim 1, wherein: ​ In the step (1), the growth substrate is one of a silicon substrate, a silicon carbide substrate, a sapphire substrate and a gallium nitride substrate, a buffer layer is grown on the growth substrate before growing the first semiconductor layer, and the first semiconductor layer and the second semiconductor layer are one of gallium nitride, aluminum gallium nitride, gallium arsenide and gallium phosphide.

3. The manufacturing method of the Micro-LED display substrate according to claim 1, wherein: In the step (2), a layer of adhesive material is arranged on the first transfer substrate, and then the light-transmitting conductive layer is adhered to the first transfer substrate by the layer of adhesive material, and the etching treatment is performed by a wet etching process or a dry etching process.

4. The manufacturing method of the Micro-LED display substrate according to claim 1, wherein: In the step (3), the material of the first insulating layer is one of aluminum oxide, aluminum nitride, silicon carbide and silicon nitride, and the first insulating layer is formed by a chemical vapor deposition process or an atomic layer deposition process.

5. The manufacturing method of the Micro-LED display substrate according to claim 1, wherein: In the step (5), the material of the first metal layer is one of copper, aluminum, silver and nickel, and the first metal layer is prepared by one or more of a magnetron sputtering process, a thermal evaporation process, an electroless plating process and an electron beam evaporation process, and the part of the first metal layer located in the first recess is conformal to the first recess.

6. The manufacturing method of the Micro-LED display substrate according to claim 1, wherein: In the step (6), the first insulating layer is cut by laser or a knife.

7. The manufacturing method of the Micro-LED display substrate according to claim 1, wherein: In the step (7), each Micro-LED mounting area of the array substrate is processed by opening, and then a metal material is filled to form the second heat dissipation part.

8. A Micro-LED display substrate, characterized in that: It is formed by the manufacturing method of any one of claims 1-7.

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