Light-emitting element and display device including the same

Abstract

A light-emitting element and a display device including the light-emitting element are provided. The light-emitting element is a light-emitting element having a shape extending in one direction, and includes: a semiconductor core including a main body extending in one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to the other side of the main body and having a width smaller than the width of the main body; and an insulating film surrounding at least a part of the outer surface of the semiconductor core, wherein the insulating film includes: a first insulating film surrounding the first end of the semiconductor core and a second insulating film surrounding the second end of the semiconductor core, and wherein the diameter of the outer surface of the first insulating film is equal to the diameter of the outer surface of the second insulating film.

Description

Technical Field

[0001] The present invention relates to a light-emitting element and a display device including the light-emitting element. Background Art

[0002] With the development of multimedia technology, the importance of display devices has been steadily increasing. In response thereto, various types of display devices such as organic light-emitting displays and liquid crystal displays (LCDs) have been used.

[0003] A display device is a device for displaying images and includes a display panel such as an organic light-emitting display panel or a liquid crystal display panel. The light-emitting display panel may include a light-emitting element (e.g., a light-emitting diode (LED)), and examples of the light-emitting diode include an organic light-emitting diode (OLED) using an organic material as a fluorescent material and an inorganic light-emitting diode using an inorganic material as a fluorescent material. Summary of the Invention

[0004] Technical Problem

[0005] Aspects of the present disclosure provide a light-emitting element having a flat shape by removing a step difference on its outer surface.

[0006] Aspects of the present disclosure also provide a display device including the light-emitting element.

[0007] It should be noted that the disclosed aspects are not limited thereto, and other aspects not mentioned herein will be apparent to those of ordinary skill in the art from the following description.

[0008] Technical Solution

[0009] According to an embodiment of the disclosure, a light-emitting element having a shape extending in one direction includes: a semiconductor core including a body, a first end, and a second end, the body extending in one direction, the first end connected to one side of the body and having an inclined side surface, the second end connected to the other side of the body and having a width smaller than the width of the body; and an insulating film surrounding at least a part of the outer surface of the semiconductor core, wherein the insulating film includes a first insulating film surrounding the first end of the semiconductor core and a second insulating film surrounding the second end of the semiconductor core, and the diameter of the outer surface of the first insulating film is the same as the diameter of the outer surface of the second insulating film.

[0010] The thickness of each of the first insulating film and the second insulating film may increase as the distance from the body increases, and the maximum thickness of the first insulating film may be greater than the maximum thickness of the second insulating film.

[0011] In the semiconductor core, the outer surface of the body may be exposed, and the outer surface of the first insulating film, the outer surface of the second insulating film, and the outer surface of the body may be collinear in a cross section.

[0012] The insulating film may further include a third insulating film surrounding the outer surface of the body of the semiconductor core, and the outer surfaces of the first insulating film, the second insulating film, and the third insulating film may be collinear in a cross section.

[0013] The third insulating film may have a constant thickness.

[0014] The insulating film may further include inorganic particles.

[0015] The semiconductor core may include a first semiconductor layer, an active layer surrounding at least a part of the region of the first semiconductor layer, and a second semiconductor layer surrounding a part of the region of the first semiconductor layer and the active layer.

[0016] The first semiconductor layer may include a first part extending in one direction, a second part located on one side of the first part, and a third part located on the other side of the first part and extending in one direction, wherein the second part may have a shape with an inclined outer surface.

[0017] The diameter of the third part may be smaller than the diameter of the first part, and the outer surface of the third part may be recessed from the outer surface of the first part toward the center of the first semiconductor layer.

[0018] The active layer may be disposed to surround the outer surface of the first part.

[0019] According to the disclosed embodiment, a display device includes: a substrate; a first electrode disposed on the substrate; a second electrode disposed on the substrate and spaced apart from the first electrode; a first insulating layer disposed between the first electrode and the second electrode and configured to cover at least a part of each of the first electrode and the second electrode; and a light-emitting element disposed on the first insulating layer between the first electrode and the second electrode and having a shape extending in one direction, wherein the light-emitting element includes: a semiconductor core including a body extending in one direction, a first end connected to one side of the body and having an inclined side surface, and a second end connected to the other side of the body and having a width smaller than the width of the body; and an insulating film surrounding at least a part of the outer surface of the semiconductor core, wherein the insulating film includes a first insulating film partially surrounding the first end of the semiconductor core and a second insulating film partially surrounding the second end of the semiconductor core.

[0020] The first insulating film may be disposed such that at least a part of the first end is exposed, the second insulating film may be disposed such that at least a part of the second end is exposed, and the light-emitting element may further include a first contact electrode in contact with the first electrode and the exposed first end and a second contact electrode in contact with the second electrode and the exposed second end.

[0021] The light-emitting element may be arranged such that at least a part of the first end of the semiconductor core is placed on the first electrode, and at least a part of the second end of the semiconductor core is placed on the second electrode, and at least a part of each of the first insulating film and the second insulating film may be in direct contact with the first insulating layer.

[0022] The first insulating film may include a first residue located between the first end and the first insulating layer.

[0023] The light-emitting element may include a first surface and a second surface. In the first surface, the first contact electrode contacts the first end. In the second surface, the first contact electrode contacts the first residue, and the second surface may not be parallel to the upper surface of the substrate.

[0024] The display device may further include a second insulating layer provided on the light-emitting element, wherein the width of the second insulating layer may be greater than the length of the main body of the semiconductor core.

[0025] The first insulating film may further include a second residue located between the second insulating layer and the first end.

[0026] The light-emitting element may further include a third surface. In the third surface, the first contact electrode contacts the second residue, and the third surface may be perpendicular to the upper surface of the substrate.

[0027] The second insulating layer may further include an insulating pattern located between the first end of the semiconductor core and the first electrode.

[0028] The first contact electrode may contact the upper surface of the insulating pattern.

[0029] Details of other embodiments are included in the detailed description and the drawings.

[0030] Advantageous Effects

[0031] A light-emitting element according to an embodiment includes a semiconductor core and an insulating film surrounding the semiconductor core. The semiconductor core may include portions having different widths, and the insulating film may be arranged to compensate for a step difference on the outer surface of the semiconductor core such that the light-emitting element may have a shape with a constant diameter.

[0032] Therefore, in a display device including the light-emitting element, a flat surface may be formed on the outer surface of the light-emitting element, and disconnection of the material of the contact electrode in contact with both ends of the light-emitting element may be prevented.

[0033] The effects according to the embodiments are not limited to the content illustrated above, and more various effects are included in the present disclosure. Description of the Drawings

[0034] Figure 1It is a plan view of a display device according to an embodiment.

[0035] Figure 2 It is a plan view showing a pixel of a display device according to an embodiment.

[0036] Figure 3 It is a cross-sectional view taken along line III-III' of Figure 2

[0037] Figure 4 It is a schematic diagram of a light-emitting element according to an embodiment.

[0038] Figure 5 It is Figure 4 a schematic cross-sectional view of the light-emitting element of

[0039] Figure 6 It is Figure 3 an enlarged view of part Q1 of

[0040] Figures 7 to 14 It is a cross-sectional view showing the manufacturing process of a light-emitting element according to an embodiment.

[0041] Figures 15 to 21 It is a cross-sectional view showing a part of the manufacturing process of a display device according to an embodiment.

[0042] Figure 22 It is a cross-sectional view showing a part of a display device according to another embodiment.

[0043] Figure 23 It is a cross-sectional view showing Figure 22 a part of the manufacturing process of the display device of

[0044] Figure 24 It is a cross-sectional view showing a part of a display device according to still another embodiment.

[0045] Figure 25 It is Figure 24 an enlarged view of part Q2 of

[0046] Figure 26 It is a schematic cross-sectional view of a light-emitting element according to yet another embodiment.

[0047] Figure 27 It is a cross-sectional view showing Figure 26 a part of the manufacturing process of the light-emitting element of

[0048] Figure 28 It is a cross-sectional view showing a part of a display device including the light-emitting element of Figure 26

[0049] Figure 29Schematic cross-sectional view of a light-emitting element according to another embodiment.

[0050] Figure 30 Schematic cross-sectional view of a light-emitting element according to another embodiment.

[0051] Figure 31 Plan view showing one pixel of a display device according to another embodiment.

[0052] Figure 32 Plan view showing one pixel of a display device according to another embodiment. Detailed Description

[0053] The invention will now be described more fully hereinafter with reference to the accompanying drawings in which preferred embodiments of the invention are shown. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0054] It will also be understood that when a layer is referred to as being "on" another layer or substrate, the layer can be directly on the other layer or substrate, or an intermediate layer may also be present. Throughout the specification, the same reference numerals indicate the same components.

[0055] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the teachings of the invention, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0056] Hereinafter, embodiments will be described with reference to the drawings.

[0057] Figure 1 Plan view of a display device according to an embodiment.

[0058] Refer to Figure 1 , the display device 10 displays video or still images. The display device 10 may refer to all electronic devices that provide a display screen. For example, the display device 10 may include a television, a notebook, a monitor, a billboard, an Internet of Things (IoT) device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic manager, an e-book reader, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, and a video camera, etc. that provide a display screen.

[0059] The display device 10 includes a display panel that provides a display screen. Examples of the display panel may include an inorganic light-emitting diode display panel, an organic light-emitting display panel, a quantum dot light-emitting display panel, a plasma display panel, and a field emission display panel, etc. Hereinafter, although a case where an inorganic light-emitting diode display panel is shown as an example of the display panel is illustrated, the present invention is not limited thereto, and when the same technical spirit is applicable, it may be applied to other display panels.

[0060] The shape of the display device 10 may be modified differently. For example, the display device 10 may have a shape such as a rectangular shape with a horizontal side length, a rectangular shape with a vertical side length, a square shape, a quadrilateral shape with rounded (filleted) corners (vertices), other polygonal shapes, and a circular shape, etc. The shape of the display area DPA of the display device 10 may also be similar to the overall shape of the display device 10. In Figure 1 it, a display device 10 with a rectangular shape having a horizontal side length and a display area DPA are shown.

[0061] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA is an area where an image can be displayed, and the non-display area NDA is an area where no image is displayed. The display area DPA may refer to an effective area, and the non-display area NDA may refer to an ineffective area. The display area DPA generally may occupy the center of the display device 10.

[0062] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged in a matrix form. The shape of each of the pixels PX may be a rectangular shape or a square shape in a plan view, but the present invention is not limited thereto, and the shape may be a rhombus shape in which each side is inclined with respect to one direction. The pixels PX may be arranged alternately in a stripe type or a PENTILE type. In addition, each of the pixels PX may include one or more light-emitting elements 300 (see Figure 2 ) that emit light in a specific wavelength range, thereby displaying a specific color.

[0063] The non-display area NDA may be provided around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. When the display area DPA has a rectangular shape, the non-display area NDA may be provided adjacent to the four sides of the display area DPA. The non-display area NDA may form a border of the display device 10. In each non-display area NDA, lines or circuit driving components included in the display device 10 may be provided, or external devices may be installed.

[0064] Figure 2 is a plan view showing one pixel of a display device according to an embodiment. Figure 3 is along Figure 2A cross-sectional view taken along line III-III'.

[0065] Referring to Figure 2 , each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit light of a first color, the second sub-pixel PX2 may emit light of a second color, and the third sub-pixel PX3 may emit light of a third color. The first color may be blue, the second color may be green, and the third color may be red. However, the present invention is not limited thereto, and the sub-pixels PXn may emit light of the same color. Additionally, in Figure 2 , the pixel PX is shown as including three sub-pixels PXn, but is not limited thereto and may include a greater number of sub-pixels PXn.

[0066] Each of the sub-pixels PXn of the display device 10 may include a region defined as a light-emitting region EMA. The first sub-pixel PX1 may include a first light-emitting region EMA1, the second sub-pixel PX2 may include a second light-emitting region EMA2, and the third sub-pixel PX3 may include a third light-emitting region EMA3. The light-emitting region EMA may be defined as a region in which a light-emitting element 300 included in the display device 10 is provided to emit light within a specific wavelength range. The light-emitting element 300 includes an active layer 330 (see Figure 4 ), and the active layer 330 may emit light within a specific wavelength range without directivity. The light emitted from the active layer 330 of the light-emitting element 300 may be emitted toward two side surfaces of the light-emitting element 300. The light-emitting region EMA may include a region in which the light-emitting element 300 is provided, and may include a region adjacent to the light-emitting element 300 through which the light emitted from the light-emitting element 300 passes and is emitted.

[0067] The present invention is not limited thereto, and the light-emitting region EMA may also include a region in which the light emitted from the light-emitting element 300 is reflected or refracted by another member and then emitted. A plurality of light-emitting elements 300 may be provided in each sub-pixel PXn, and the region in which the light-emitting element 300 is provided and the region adjacent to the region form the light-emitting region EMA.

[0068] Although not shown in the drawings, each of the sub-pixels PXn of the display device 10 may include a non-light-emitting region defined as a region other than the light-emitting region EMA. The non-light-emitting region may be a region in which the light-emitting element 300 is not provided and the light emitted from the light-emitting element 300 does not reach, so that no light is emitted.

[0069] Figure 3 Only the cross-section of the first sub-pixel PX1 of Figure 2 is shown, but the cross-section may be equally applicable to other pixels PX or sub-pixels PXn.Figure 3 shows a cross-section across one end and the other end of the light-emitting element 300 in the first sub-pixel PX1 provided in Figure 2 .

[0070] Combined with Figure 2 referring to Figure 3 , the display device 10 may include a circuit element layer and a display element layer provided on the first substrate 101. A semiconductor layer, a plurality of conductive layers, and a plurality of insulating layers are provided on the first substrate 101, and the semiconductor layer, the plurality of conductive layers, and the plurality of insulating layers may constitute the circuit element layer and the display element layer. The plurality of conductive layers may include a first gate conductive layer, a second gate conductive layer, a first data conductive layer, and a second data conductive layer provided below the first planarization layer 109 to form the circuit element layer, and electrodes 210 and 220 and contact electrodes 260 provided on the first planarization layer 109 to form the display element layer. The plurality of insulating layers may include a buffer layer 102, a first gate insulating layer 103, a first protective layer 105, a first interlayer insulating layer 107, a second interlayer insulating layer 108, a first planarization layer 109, a first insulating layer 510, a second insulating layer 520, a third insulating layer 530, and a fourth insulating layer 550, etc.

[0071] The circuit element layer may include circuit elements and a plurality of lines (such as a driving transistor DT, a switching transistor ST, a first conductive pattern CDP, and a plurality of voltage lines VL1 and VL2) for driving the light-emitting element 300, and the display element layer may include the light-emitting element 300 and include a first electrode 210, a second electrode 220, a first contact electrode 261, and a second contact electrode 262, etc.

[0072] The first substrate 101 may be an insulating substrate. The first substrate 101 may be made of an insulating material such as glass, quartz, or a polymer resin. In addition, the first substrate 101 may be a rigid substrate, but may also be a flexible substrate such as bendable, foldable, or rollable.

[0073] The lower metal layers BML1 and BML2 may be disposed on the first substrate 101. The lower metal layers BML1 and BML2 may include a first lower metal layer BML1 and a second lower metal layer BML2. The first lower metal layer BML1 and the second lower metal layer BML2 are disposed to be at least respectively stacked on the first active material layer DT_ACT of the driving transistor DT and the second active material layer ST_ACT of the switching transistor ST. The lower metal layers BML1 and BML2 may include a light-blocking material to prevent light from incident on the first active material layer DT_ACT and the second active material layer ST_ACT. As an example, the first lower metal layer BML1 and the second lower metal layer BML2 may be formed of an opaque metal material that blocks light transmission. However, the present invention is not limited thereto, and in some cases, the lower metal layers BML1 and BML2 may be omitted. Although not shown in the drawings, the first lower metal layer BML1 may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT to be described below, and the second lower metal layer BML2 may be electrically connected to the first source / drain electrode ST_SD1 of the switching transistor ST.

[0074] The buffer layer 102 may be entirely disposed on the lower metal layers BML1 and BML2 and the first substrate 101. The buffer layer 102 may be formed on the first substrate 101 to protect the transistors DT and ST of the pixel PX from moisture that penetrates through the first substrate 101 vulnerable to moisture penetration, and may perform a surface planarization function. The buffer layer 102 may be formed as a plurality of alternately stacked inorganic layers, or formed as a single layer. For example, the buffer layer 102 may be formed in a structure in which inorganic layers including at least one of silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiO x N y ) are alternately stacked, or formed as a single layer made of one inorganic layer.

[0075] The semiconductor layer is disposed on the buffer layer 102. The semiconductor layer may include the first active material layer DT_ACT of the driving transistor DT and the second active material layer ST_ACT of the switching transistor ST. The first active material layer DT_ACT and the second active material layer ST_ACT may be disposed to be partially stacked with parts such as the gate electrodes DT_G and ST_G of the first gate conductive layer to be described below.

[0076] In an embodiment, the semiconductor layer may include polysilicon, single-crystalline silicon, an oxide semiconductor, etc. The polysilicon may be formed by crystallizing amorphous silicon. Examples of the crystallization method may include a rapid thermal annealing (RTA) method, a solid-phase crystallization (SPC) method, an excimer laser annealing (ELA) method, a metal-induced lateral crystallization (MILC) method, a sequential lateral solidification (SLS) method, etc., but the present invention is not limited thereto. When the semiconductor layer includes polysilicon, the first active material layer DT_ACT may include a first doped region DT_ACTa, a second doped region DT_ACTb, and a first channel region DT_ACTc. The first channel region DT_ACTc may be disposed between the first doped region DT_ACTa and the second doped region DT_ACTb. The second active material layer ST_ACT may include a third doped region ST_ACTa, a fourth doped region ST_ACTb, and a second channel region ST_ACTc. The second channel region ST_ACTc may be disposed between the third doped region ST_ACTa and the fourth doped region ST_ACTb. The first doped region DT_ACTa, the second doped region DT_ACTb, the third doped region ST_ACTa, and the fourth doped region ST_ACTb may be regions in which partial regions of each of the first active material layer DT_ACT and the second active material layer ST_ACT are doped with impurities.

[0077] In an embodiment, the first active material layer DT_ACT and the second active material layer ST_ACT may include an oxide semiconductor. In this case, the doped region of each of the first active material layer DT_ACT and the second active material layer ST_ACT may be a region that has become conductive. The oxide semiconductor may be an oxide semiconductor including indium (In). In some embodiments, the oxide semiconductor may be indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), or indium gallium zinc tin oxide (IGZTO), etc. However, the present invention is not limited thereto.

[0078] The first gate insulating layer 103 is disposed on the semiconductor layer and the buffer layer 102. The first gate insulating layer 103 may serve as a gate insulating film for driving the transistor DT and the switching transistor ST. The first gate insulating layer 103 may be formed to include a single inorganic layer of an inorganic material such as silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiO x N y ), or may be formed in a structure in which inorganic layers are alternately stacked or stacked in multiple layers.

[0079] The first gate conductive layer is disposed on the first gate insulating layer 103. The first gate conductive layer may include a first gate electrode DT_G of the driving transistor DT and a second gate electrode ST_G of the switching transistor ST. The first gate electrode DT_G may be disposed to overlap with the first channel region DT_ACTc of the first active material layer DT_ACT in the thickness direction, and the second gate electrode ST_G may be disposed to overlap with the second channel region ST_ACTc of the second active material layer ST_ACT in the thickness direction.

[0080] The first gate conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

[0081] The first protective layer 105 is disposed on the first gate conductive layer. The first protective layer 105 may be disposed to cover the first gate conductive layer and may perform the function of protecting the first gate conductive layer. The first protective layer 105 may be formed to include an inorganic material such as silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiO x N y ) as a single inorganic layer, or may be formed in a structure in which inorganic layers are alternately stacked or stacked as multiple layers.

[0082] The second gate conductive layer is disposed on the first protective layer 105. The second gate conductive layer may include a first capacitor electrode CE1 of the storage capacitor, and the first capacitor electrode CE1 is disposed such that at least a partial region thereof overlaps with the first gate electrode DT_G in the thickness direction. The first capacitor electrode CE1 and the first gate electrode DT_G may overlap with each other in the thickness direction, and the first protective layer 105 is disposed between the first capacitor electrode CE1 and the first gate electrode DT_G, so that the first capacitor electrode CE1, the first gate electrode DT_G, and the first protective layer 105 formed between the first capacitor electrode CE1 and the first gate electrode DT_G may form a storage capacitor. The second gate conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

[0083] The first interlayer insulating layer 107 is disposed on the second gate conductive layer. The first interlayer insulating layer 107 may be used as an insulating layer between the second gate conductive layer and other layers disposed thereon. The first interlayer insulating layer 107 may be formed to include an inorganic material such as silicon oxide (SiO x ), silicon nitride (SiN x) and a single inorganic layer of an inorganic material of silicon oxynitride (SiO x N y ), or may be formed in a structure in which inorganic layers are alternately stacked or stacked in multiple layers.

[0084] The first data conductive layer is disposed on the first interlayer insulating layer 107. The first data conductive layer may include a first source / drain electrode DT_SD1 and a second source / drain electrode DT_SD2 of the driving transistor DT, and a first source / drain electrode ST_SD1 and a second source / drain electrode ST_SD2 of the switching transistor ST.

[0085] The first source / drain electrode DT_SD1 and the second source / drain electrode DT_SD2 of the driving transistor DT may be respectively in contact with a first doped region DT_ACTa and a second doped region DT_ACTb of the first active material layer DT_ACT through contact holes passing through the first interlayer insulating layer 107, the first protective layer 105, and the first gate insulating layer 103. The first source / drain electrode ST_SD1 and the second source / drain electrode ST_SD2 of the switching transistor ST may be respectively in contact with a third doped region ST_ACTa and a fourth doped region ST_ACTb of the second active material layer ST_ACT through contact holes passing through the first interlayer insulating layer 107, the first protective layer 105, and the first gate insulating layer 103. Additionally, the first source / drain electrode DT_SD1 of the driving transistor DT and the first source / drain electrode ST_SD1 of the switching transistor ST may be electrically connected to a first lower metal layer BML1 and a second lower metal layer BML2 respectively through other contact holes. Meanwhile, among the first source / drain electrodes DT_SD1 and ST_SD1 and the second source / drain electrodes DT_SD2 and ST_SD2 of the driving transistor DT and the switching transistor ST, when one electrode is a source electrode, the other electrode may be a drain electrode. However, the present invention is not limited thereto, and among the first source / drain electrodes DT_SD1 and ST_SD1 and the second source / drain electrodes DT_SD2 and ST_SD2, when one electrode is a drain electrode, the other electrode may be a source electrode.

[0086] The first data conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

[0087] The second interlayer insulating layer 108 may be disposed on the first data conductive layer. The second interlayer insulating layer 108 may completely cover the first data conductive layer while being disposed on the first interlayer insulating layer 107, and may be used to protect the first data conductive layer. The second interlayer insulating layer 108 may be formed to include, for example, silicon oxide (SiO x ), silicon nitride (SiNx ) and a single inorganic layer of an inorganic material of silicon oxynitride (SiO x N y ), or may be formed in a structure in which inorganic layers are alternately stacked or stacked in multiple layers.

[0088] The second data conductive layer is disposed on the second interlayer insulating layer 108. The second data conductive layer may include a second voltage line VL2, a first voltage line VL1, and a first conductive pattern CDP. The high-potential voltage (first power voltage (VDD)) to be supplied to the driving transistor DT may be applied to the first voltage line VL1, and the low-potential voltage (second power voltage (VSS)) to be supplied to the second electrode 220 may be applied to the second voltage line VL2. During the manufacturing process of the display device 10, an alignment signal required to align the light-emitting element 300 may be applied to the second voltage line VL2.

[0089] The first conductive pattern CDP may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT through a contact hole formed in the second interlayer insulating layer 108. The first conductive pattern CDP may also be in contact with the first electrode 210 to be described below, and the driving transistor DT may transmit the first power voltage (VDD) applied from the first voltage line VL1 to the first electrode 210 through the first conductive pattern CDP. At the same time, in the drawings, the second data conductive layer is shown as including one first voltage line VL1 and one second voltage line VL2, but the present invention is not limited thereto. The second data conductive layer may include a greater number of first voltage lines VL1 and a greater number of second voltage lines VL2.

[0090] The second data conductive layer may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. However, the present invention is not limited thereto.

[0091] The first planarization layer 109 is disposed on the second data conductive layer. The first planarization layer 109 may include an organic insulating material (e.g., an organic material such as polyimide (PI)), and may perform a surface planarization function.

[0092] Inner dams 410 and 420, a plurality of electrodes 210 and 220, an outer dam 450, a plurality of contact electrodes 260, and a light-emitting element 300 are disposed on the first planarization layer 109. In addition, a plurality of insulating layers 510, 520, 530, and 550 may also be disposed on the first planarization layer 109.

[0093] The inner dams 410 and 420 are directly disposed on the first planarization layer 109. The inner dams 410 and 420 may include a first inner dam 410 and a second inner dam 420 that are disposed adjacent to the central portions of each pixel PX or sub-pixel PXn.

[0094] As Figure 2 shown, the first inner dam 410 and the second inner dam 420 may be disposed to be spaced apart from each other and face each other in the first direction DR1. Additionally, the first inner dam 410 and the second inner dam 420 may extend in the second direction DR2, and may be separated and terminated at the boundaries between the sub-pixels PXn so as not to extend to another adjacent sub-pixel PXn in the second direction DR2. Thus, the first inner dam 410 and the second inner dam 420 may be disposed in each sub-pixel PXn to form a pattern on the entire surface of the display device 10. By disposing the inner dams 410 and 420 to be spaced apart from each other and face each other, an area in which the light-emitting elements 300 are disposed may be formed therebetween. In the drawings, one first inner dam 410 and one second inner dam 420 are shown, but the present invention is not limited thereto. In some cases, a greater number of inner dams 410 and 420 may be further disposed according to the number of the electrodes 210 and 220, which will be described below.

[0095] Furthermore, as Figure 3 shown, each of the first inner dam 410 and the second inner dam 420 may have a structure in which at least a portion thereof protrudes with respect to the upper surface of the first planarization layer 109. The protruding portions of each of the first inner dam 410 and the second inner dam 420 may have inclined side surfaces, and the light emitted from the light-emitting elements 300 disposed between the first inner dam 410 and the second inner dam 420 may travel toward the inclined side surfaces of the inner dams 410 and 420. As will be described below, when the electrodes 210 and 220 disposed on the inner dams 410 and 420 respectively include materials having a high reflectivity, the light emitted from the light-emitting elements 300 may be reflected from the electrodes 210 and 220 disposed on the side surfaces of the inner dams 410 and 420 and emitted in the upward direction with respect to the first substrate 101. That is, the inner dams 410 and 420 may provide an area in which the light-emitting elements 300 are disposed, and at the same time may serve as reflective partition walls for reflecting the light emitted from the light-emitting elements 300 upward. In an embodiment, the inner dams 410 and 420 may include an organic insulating material such as polyimide (PI), but the present invention is not limited thereto.

[0096] A plurality of electrodes 210 and 220 are disposed on the inner dams 410 and 420 and the first planarization layer 109. The plurality of electrodes 210 and 220 may include a first electrode 210 disposed on the first inner dam 410 and a second electrode 220 disposed on the second inner dam 420.

[0097] Specifically, the first electrode 210 may be disposed in each sub-pixel PXn in a form extending in the second direction DR2. However, the first electrode 210 may not extend to another adjacent sub-pixel PXn in the second direction DR2 and may be disposed to be partially spaced apart from the outer bank 450 surrounding each sub-pixel PXn. The first electrode 210 may further include a portion disposed to overlap with the outer bank 450, and the first electrode 210 may be electrically connected to the driving transistor DT at the portion overlapping with the outer bank 450. For example, the first electrode 210 may be in contact with the first conductive pattern CDP through a first contact hole CT1 formed in the region overlapping with the outer bank 450 and passing through the first planarization layer 109, and through this, the first electrode 210 may be electrically connected to the first source / drain electrode DT_SD1 of the driving transistor DT.

[0098] The second electrode 220 may be disposed to extend in the second direction DR2 in each sub-pixel PXn. Different from the first electrode 210, the second electrode 220 may be disposed to extend to another adjacent sub-pixel PXn in the second direction DR2. That is, one connected second electrode 220 may be disposed in a plurality of adjacent sub-pixels PXn in the second direction DR2. The second electrode 220 may be partially overlapped with the outer bank 450 at the boundary of the adjacent sub-pixels PXn in the second direction DR2, and the second electrode 220 may be electrically connected to the second voltage line VL2 in the region overlapping with the outer bank 450. For example, the second electrode 220 may be in contact with the second voltage line VL2 through a second contact hole CT2 formed in the region overlapping with the outer bank 450 and passing through the first planarization layer 109. As shown in the drawings, the second electrodes 220 of the sub-pixels PXn adjacent in the first direction DR1 are respectively electrically connected to the second voltage line VL2 through the second contact holes CT2.

[0099] However, the present invention is not limited thereto. In some cases, each of the first electrode 210 and the second electrode 220 may further include a main body portion extending in the first direction DR1. In the first electrode 210, different main body portions may be provided for each sub-pixel PXn, while in the second electrode 220, one main body portion extends to the adjacent sub-pixels PXn in the first direction DR1, so that the second electrodes 220 of the sub-pixels PXn may be electrically connected to each other through the main body portion. In this case, the second electrode 220 may be electrically connected to the second voltage line VL2 in the non-display area NDA at the peripheral portion of the display area DPA where a plurality of pixels PX or sub-pixels PXn are provided.

[0100] Meanwhile, in the accompanying drawings, a first electrode 210 and a second electrode 220 are shown to be disposed in each sub-pixel PXn, but the present invention is not limited thereto. In some embodiments, a greater number of first electrodes 210 and second electrodes 220 may be disposed in each sub-pixel PXn. Additionally, the first electrode 210 and the second electrode 220 disposed in each sub-pixel PXn may not necessarily have a shape extending in one direction, and the first electrode 210 and the second electrode 220 may be disposed in various structures. For example, both the first electrode 210 and the second electrode 220 may have a shape that is partially curved or bent, and one of the first electrode 210 and the second electrode 220 may be disposed to surround the other of the first electrode 210 and the second electrode 220. As long as at least a partial region of the first electrode 210 and at least a partial region of the second electrode 220 are spaced apart from each other and face each other to form a region in which the light-emitting element 300 will be disposed between the first electrode 210 and the second electrode 220, there is no particular limitation on the arrangement structure and shape of the first electrode 210 and the second electrode 220.

[0101] A plurality of electrodes 210 and 220 may be electrically connected to the light-emitting element 300 and may receive a predetermined voltage to allow the light-emitting element 300 to emit light. For example, the plurality of electrodes 210 and 220 may be electrically connected to the light-emitting element 300 through a contact electrode 260 described below, and may transmit an electrical signal applied to the electrodes 210 and 220 to the light-emitting element 300 through the contact electrode 260.

[0102] In an embodiment, the first electrode 210 may be a pixel electrode separated for each sub-pixel PXn, and the second electrode 220 may be a common electrode commonly connected along each sub-pixel PXn. One of the first electrode 210 and the second electrode 220 may be an anode of the light-emitting element 300, and the other of them may be a cathode of the light-emitting element 300. However, the present invention is not limited thereto, and the opposite of the above may be possible.

[0103] Furthermore, each of the electrodes 210 and 220 may be used to form an electric field in the sub-pixel PXn so as to align the light-emitting element 300. The light-emitting element 300 may be disposed between the first electrode 210 and the second electrode 220 through a process of forming an electric field between the first electrode 210 and the second electrode 220 by applying an alignment signal to the first electrode 210 and the second electrode 220. As will be described below, the light-emitting element 300 may be ejected onto the first electrode 210 and the second electrode 220 in a state dispersed in ink through an inkjet printing process, and may be aligned between the first electrode 210 and the second electrode 220 by a method of applying a dielectrophoretic force to the light-emitting element 300 by applying an alignment signal between the first electrode 210 and the second electrode 220.

[0104] As shown Figure 3 in FIG. 1, the first electrode 210 and the second electrode 220 may be respectively disposed on the first inner bank 410 and the second inner bank 420, and may be spaced apart from each other and face each other. In each of the plurality of light-emitting elements 300 disposed between the first inner bank 410 and the second inner bank 420, at least one end may be electrically connected to the first electrode 210 and the second electrode 220.

[0105] In some embodiments, the first electrode 210 and the second electrode 220 may be formed to have widths respectively larger than those of the first inner bank 410 and the second inner bank 420. For example, the first electrode 210 and the second electrode 220 may be disposed to respectively cover the outer surfaces of the first inner bank 410 and the second inner bank 420. The first electrode 210 and the second electrode 220 may be respectively disposed on the side surfaces of the first inner bank 410 and the second inner bank 420, and the separation distance between the first electrode 210 and the second electrode 220 may be smaller than the separation distance between the first inner bank 410 and the second inner bank 420. Additionally, at least a partial region of each of the first electrode 210 and the second electrode 220 may be directly disposed on the first planarization layer 109.

[0106] Each of the electrodes 210 and 220 may include a transparent conductive material. As an example, each of the electrodes 210 and 220 may include materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO), but the present invention is not limited thereto. In some embodiments, each of the electrodes 210 and 220 may include a conductive material having a high reflectivity. For example, each of the electrodes 210 and 220 may include a metal such as silver (Ag), copper (Cu), or aluminum (Al) as a material having a high reflectivity. In this case, for each sub-pixel PXn, each of the electrodes 210 and 220 may reflect the light emitted from the light-emitting element 300 and traveling parallel to the side surfaces of the first inner bank 410 and the second inner bank 420 in the upward direction.

[0107] The present invention is not limited thereto, and each of the electrodes 210 and 220 may be formed in a structure in which one or more layers of transparent conductive material and a metal layer having a high reflectivity are stacked, or may be formed as a single layer including a transparent conductive material and a metal layer. In an embodiment, each of the electrodes 210 and 220 may have a stacked structure of ITO / Ag / ITO / IZO, or may be an alloy including Al, Ni, and lanthanum (La), etc.

[0108] The first insulating layer 510 is disposed on the first planarization layer 109, the first electrode 210, and the second electrode 220. In addition to the regions between the electrodes 210 and 220 spaced apart from each other or between the inner dams 410 and 420, the first insulating layer 510 may also be disposed on the sides of the inner dams 410 and 420 opposite to the regions between the inner dams 410 and 420. Additionally, the first insulating layer 510 is disposed to partially cover the first electrode 210 and the second electrode 220. For example, the first insulating layer 510 may be entirely disposed on the first planarization layer 109 on which the first electrode 210 and the second electrode 220 are formed, and may be disposed to expose a part of the upper surface of each of the first electrode 210 and the second electrode 220. Openings (not shown) for partially exposing the first electrode 210 and the second electrode 220 may be formed in the first insulating layer 510, and the first insulating layer 510 may be disposed to cover only one side and the other side of each of the first electrode 210 and the second electrode 220. Some of the portions of the first electrode 210 and the second electrode 220 disposed on the inner dams 410 and 420 may be partially exposed due to the openings.

[0109] The first insulating layer 510 can protect the first electrode 210 and the second electrode 220 and, at the same time, insulate the first electrode 210 from the second electrode 220. Additionally, it is possible to prevent the light-emitting element 300 disposed on the first insulating layer 510 from being damaged due to direct contact with other components. However, the shape and structure of the first insulating layer 510 are not limited thereto.

[0110] In an embodiment, a step difference may be formed on a part of the upper surface of the first insulating layer 510 between the first electrode 210 and the second electrode 220. In some embodiments, the first insulating layer 510 may include an inorganic insulating material, and a part of the upper surface of the first insulating layer 510 disposed to partially cover the first electrode 210 and the second electrode 220 may be stepped due to the step difference formed by the electrodes 210 and 220 disposed below the first insulating layer 510. Accordingly, an empty space may be formed between the upper surface of the first insulating layer 510 and the light-emitting element 300 disposed on the first insulating layer 510 between the first electrode 210 and the second electrode 220. The empty space may be filled with a material for forming the second insulating layer 520, which will be described below.

[0111] However, the present invention is not limited thereto. The first insulating layer 510 may be formed such that a portion thereof disposed between the first electrode 210 and the second electrode 220 has a flat upper surface. The upper surface extends in one direction toward the first electrode 210 and the second electrode 220, and the first insulating layer 510 may also be disposed in a region where the electrodes 210 and 220 are respectively stacked on the inclined side surfaces of the first inner bank 410 and the second inner bank 420. The contact electrode 260 described below may contact the exposed regions of the first electrode 210 and the second electrode 220, and may smoothly contact the end portions of the light-emitting element 300 on the flat upper surface of the first insulating layer 510.

[0112] The outer bank 450 may be disposed on the first insulating layer 510. As Figure 2 and Figure 3 shown, the outer bank 450 may be disposed at the boundary between the sub-pixels PXn. The outer bank 450 may be disposed to extend at least in the second direction DR2, and surround some of the inner banks 410 and 420 and the electrodes 210 and 220, and surround a region where the light-emitting element 300 is disposed between the inner banks 410 and 420 and between the electrodes 210 and 220. In addition, the outer bank 450 may further include a portion extending in the first direction DR1, and may form a grid pattern on the entire surface of the display area DPA.

[0113] According to one embodiment, the height of the outer bank 450 may be greater than the height of each of the inner banks 410 and 420. Different from the inner banks 410 and 420, the outer bank 450 may divide adjacent sub-pixels PXn, and at the same time, during the manufacturing process of the display device 10, in the inkjet printing process for setting the light-emitting element 300, prevent ink from overflowing into adjacent sub-pixels PXn. That is, the outer bank 450 may separate inks in which different light-emitting elements 300 are dispersed in different sub-pixels PXn to prevent the inks from mixing with each other. Similar to the inner banks 410 and 420, the outer bank 450 may include polyimide (PI), but the present invention is not limited thereto.

[0114] The light-emitting element 300 may be disposed in a region formed between the first electrode 210 and the second electrode 220 or between the first inner bank 410 and the second inner bank 420. One end of the light-emitting element 300 may be electrically connected to the first electrode 210, and the other end thereof may be electrically connected to the second electrode 220. The light-emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220 through the contact electrode 260, respectively.

[0115] A plurality of light-emitting elements 300 may be arranged to be spaced apart from each other and aligned substantially parallel to each other. The separation distance between the light-emitting elements 300 is not particularly limited. In some cases, a plurality of light-emitting elements 300 may be arranged adjacent to each other to form a group, and a plurality of other light-emitting elements 300 may be grouped at a predetermined interval and may be oriented and aligned in one direction with non-uniform density. Additionally, in an embodiment, the light-emitting element 300 may have a shape extending in one direction, and the direction along which each of the electrodes 210 and 220 extends may be substantially perpendicular to the direction along which the light-emitting element 300 extends. However, the present invention is not limited thereto, and the light-emitting element 300 may be arranged obliquely without being perpendicular to the direction along which each of the electrodes 210 and 220 extends.

[0116] The light-emitting element 300 according to an embodiment may include an active layer 330 having different materials to emit light in different wavelength ranges to the outside. The display device 10 according to an embodiment may include light-emitting elements 300 that emit light in different wavelength ranges. The light-emitting element 300 of the first sub-pixel PX1 may include an active layer 330 that emits light of a first color having a first wavelength in a central wavelength range, the light-emitting element 300 of the second sub-pixel PX2 may include an active layer 330 that emits light of a second color having a second wavelength in a central wavelength range, and the light-emitting element 300 of the third sub-pixel PX3 may include an active layer 330 that emits light of a third color having a third wavelength in a central wavelength range.

[0117] Accordingly, light of the first color may be emitted from the first sub-pixel PX1, light of the second color may be emitted from the second sub-pixel PX2, and light of the third color may be emitted from the third sub-pixel PX3. In some embodiments, the light of the first color may be blue light having a central wavelength range in the range of 450 nm to 495 nm, the light of the second color may be green light having a central wavelength range in the range of 495 nm to 570 nm, and the light of the third color may be red light having a central wavelength range in the range of 620 nm to 752 nm. However, the present invention is not limited thereto. In some cases, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include the same type of light-emitting element 300 to emit light of substantially the same color.

[0118] The light-emitting element 300 may be disposed on the first insulating layer 510 between the inner dikes 410 and 420 or between the electrodes 210 and 220. For example, the light-emitting element 300 may be disposed on the first insulating layer 510 provided between the inner dikes 410 and 420. Meanwhile, the light-emitting element 300 may be arranged such that a partial region thereof overlaps with each of the electrodes 210 and 220 in the thickness direction. One end of the light-emitting element 300 may overlap with the first electrode 210 in the thickness direction and may be placed on the first electrode 210, and the other end thereof may overlap with the second electrode 220 in the thickness direction and may be placed on the second electrode 220. However, the present invention is not limited thereto. Although not shown in the drawings, at least some of the light-emitting elements 300 provided in each sub-pixel PXn may be disposed in a region other than the region formed between the inner dikes 410 and 420 (e.g., a region between the inner dikes 410 and 420 and the outer dike 450).

[0119] The light-emitting element 300 may include a plurality of layers disposed therein in a direction perpendicular to the upper surface of the first substrate 101 or the upper surface of the first planarization layer 109. The light-emitting element 300 of the display device 10 according to an embodiment may have a shape extending in one direction and may have a structure in which a plurality of semiconductor layers are sequentially disposed in the one direction. The light-emitting element 300 may be arranged such that one direction along which the light-emitting element 300 extends is parallel to the first planarization layer 109, and the plurality of semiconductor layers included in the light-emitting element 300 may be sequentially disposed in a direction parallel to the upper surface of the first planarization layer 109. However, the present invention is not limited thereto. In some cases, when the light-emitting element 300 has a different structure, the plurality of layers may be disposed in a direction perpendicular to the first planarization layer 109.

[0120] Meanwhile, the light-emitting element 300 may include a semiconductor core SC including a plurality of semiconductor layers (see Figure 5 ) and an insulating film 380 partially surrounding the semiconductor core (see Figure 4 ). The semiconductor core SC may include portions having different diameters, and the insulating film 380 may be arranged to compensate for the slope difference or step difference of the outer surface of the semiconductor core SC such that the light-emitting element 300 has a constant diameter. As shown in the drawings, the light-emitting element 300 disposed on the first insulating layer 510 may have a flat surface on at least one surface thereof in contact with the first insulating layer 510. A detailed description of the structure of the light-emitting element 300 will be provided with reference to other drawings below.

[0121] The second insulating layer 520 may be partially disposed on the light-emitting element 300 disposed between the first electrode 210 and the second electrode 220. That is, the second insulating layer 520 may be disposed on the first insulating layer 510 between the first electrode 210 and the second electrode 220, and the light-emitting element 300 may be disposed between the first insulating layer 510 and the second insulating layer 520. In an embodiment, in the light-emitting element 300, the insulating film 380 (see Figure 4 ) formed at the outer surface of the light-emitting element 300 may be in direct contact with the first insulating layer 510 and the second insulating layer 520. For example, the second insulating layer 520 may be disposed to partially surround the outer surface of the light-emitting element 300, so that the light-emitting element 300 can be protected and at the same time the light-emitting element 300 can be fixed during the manufacturing process of the display device 10.

[0122] A portion of the second insulating layer 520 disposed on the light-emitting element 300 may have a shape extending in the second direction DR2 between the first electrode 210 and the second electrode 220 in a plan view. As an example, the second insulating layer 520 may form a stripe pattern or an island pattern in each sub-pixel PXn.

[0123] The second insulating layer 520 may be disposed on the light-emitting element 300 and may expose one end and the other end of the light-emitting element 300. The exposed ends of the light-emitting element 300 may be in contact with the contact electrodes 260, which will be described below. Such a shape of the second insulating layer 520 may be formed by a patterning process using a material for forming the second insulating layer 520 through a typical mask process. The mask for forming the second insulating layer 520 has a width smaller than the length of the light-emitting element 300, and the material for forming the second insulating layer 520 may be patterned to expose both ends of the light-emitting element 300. However, the present invention is not limited thereto.

[0124] In addition, in an embodiment, a portion of the material of the second insulating layer 520 may be disposed between the first insulating layer 510 and the lower surface of the light-emitting element 300. The second insulating layer 520 may be formed to fill the space between the first insulating layer 510 and the light-emitting element 300 formed during the manufacturing process of the display device 10. Therefore, the second insulating layer 520 may be formed to surround the outer surface of the light-emitting element 300. However, the present invention is not limited thereto.

[0125] A plurality of contact electrodes 260 and a third insulating layer 530 may be disposed on the second insulating layer 520.

[0126] The plurality of contact electrodes 260 may have a shape extending in one direction. The plurality of contact electrodes 260 may be in contact with the corresponding electrodes 210 and 220 and the light-emitting element 300, and the light-emitting element 300 may receive electrical signals from the first electrode 210 and the second electrode 220 through the contact electrodes 260.

[0127] The contact electrodes 260 may include a first contact electrode 261 and a second contact electrode 262. The first contact electrode 261 and the second contact electrode 262 may be respectively disposed on the first electrode 210 and the second electrode 220. The first contact electrode 261 may be disposed on the first electrode 210, and the second contact electrode 262 may be disposed on the second electrode 220. Both the first contact electrode 261 and the second contact electrode 262 may have a shape extending in the second direction DR2. The first contact electrode 261 and the second contact electrode 262 may be spaced apart from each other and face each other in the first direction DR1, and may form a stripe pattern in the light-emitting area EMA of each sub-pixel PXn.

[0128] In some embodiments, the width of each of the first contact electrode 261 and the second contact electrode 262 measured in one direction may be greater than or equal to the width of each of the first electrode 210 and the second electrode 220 measured in the one direction. The first contact electrode 261 and the second contact electrode 262 may be arranged to be in contact with one end and the other end of the light-emitting element 300 respectively, and simultaneously cover two side surfaces of the first electrode 210 and the second electrode 220 respectively. As described above, the upper surface of each of the first electrode 210 and the second electrode 220 may be partially exposed, and the first contact electrode 261 and the second contact electrode 262 may be in contact with the exposed upper surfaces of the first electrode 210 and the second electrode 220 respectively. For example, the first contact electrode 261 may be in contact with a part of the first electrode 210 located on the first inner embankment 410, and the second contact electrode 262 may be in contact with a part of the second electrode 220 located on the second inner embankment 420. However, the present invention is not limited thereto. In some cases, the widths of the first contact electrode 261 and the second contact electrode 262 may be formed to be respectively smaller than the widths of the first electrode 210 and the second electrode 220, and the first contact electrode 261 and the second contact electrode 262 may be arranged to respectively cover only the exposed parts of the upper surfaces of the first electrode 210 and the second electrode 220. In addition, at least a partial region of each of the first contact electrode 261 and the second contact electrode 262 is disposed on the first insulating layer 510.

[0129] According to one embodiment, the light-emitting element 300 has semiconductor layers exposed at two end surfaces in its extending direction, and the first contact electrode 261 and the second contact electrode 262 can be in contact with the light-emitting element 300 on the end surfaces where the semiconductor layers are exposed. However, the present invention is not limited thereto. In some cases, both end side surfaces of the light-emitting element 300 can be partially exposed. During the manufacturing process of the display device 10, the insulating film 380 (see Figure 4 ) around the outer surface of the semiconductor layer of the light-emitting element 300 can be partially removed in the process of forming the second insulating layer 520 covering the outer surface of the light-emitting element 300, and the exposed side surfaces of the light-emitting element 300 can be in contact with the first contact electrode 261 and the second contact electrode 262. One end of the light-emitting element 300 can be electrically connected to the first electrode 210 through the first contact electrode 261, and the other end thereof can be electrically connected to the second electrode 220 through the second contact electrode 262.

[0130] In the drawings, one first contact electrode 261 and one second contact electrode 262 are shown provided in one sub-pixel PXn, but the present invention is not limited thereto. The number of the first contact electrode 261 and the second contact electrode 262 can be changed according to the number of the first electrode 210 and the second electrode 220 provided in each sub-pixel PXn.

[0131] In addition, as shown in Figure 3 , the first contact electrode 261 is provided on the first electrode 210 and the second insulating layer 520. The first contact electrode 261 can be in contact with one end of the light-emitting element 300 and the exposed upper surface of the first electrode 210. The one end of the light-emitting element 300 can be electrically connected to the first electrode 210 through the first contact electrode 261.

[0132] The third insulating layer 530 is provided on the first contact electrode 261. The third insulating layer 530 can electrically insulate the first contact electrode 261 and the second contact electrode 262 from each other. The third insulating layer 530 can be provided to cover the first contact electrode 261 and can be not provided on the other end of the light-emitting element 300 so that the light-emitting element 300 can be in contact with the second contact electrode 262. The third insulating layer 530 can be in partial contact with the first contact electrode 261 and the second insulating layer 520 at the upper surface of the second insulating layer 520. The side surface of the third insulating layer 530 in the direction where the second electrode 220 is provided can be aligned with one side surface of the second insulating layer 520. In addition, the third insulating layer 530 can also be provided in a non-light-emitting region, for example, provided on the first insulating layer 510 provided on the first planarization layer 109. However, the present invention is not limited thereto.

[0133] The second contact electrode 262 is disposed on the second electrode 220, the second insulating layer 520, and the third insulating layer 530. The second contact electrode 262 may be in contact with the other end of the light-emitting element 300 and the exposed upper surface of the second electrode 220. The other end of the light-emitting element 300 may be electrically connected to the second electrode 220 through the second contact electrode 262.

[0134] That is, the first contact electrode 261 may be disposed between the first electrode 210 and the third insulating layer 530, and the second contact electrode 262 may be disposed on the third insulating layer 530. The second contact electrode 262 may be in partial contact with the second insulating layer 520, the third insulating layer 530, the second electrode 220, and the light-emitting element 300. One end of the second contact electrode 262 in the direction where the first electrode 210 is disposed may be disposed on the third insulating layer 530. The first contact electrode 261 and the second contact electrode 262 may not be in contact with each other due to the second insulating layer 520 and the third insulating layer 530. However, the present invention is not limited thereto, and in some cases, the third insulating layer 530 may be omitted.

[0135] The contact electrode 260 may include a conductive material. For example, the contact electrodes 261 and 262 may include ITO, IZO, ITZO, or aluminum (Al), etc. As an example, the contact electrode 260 may include a transparent conductive material, and the light emitted from the light-emitting element 300 may pass through the contact electrode 260 and travel toward the electrodes 210 and 220. Each of the electrodes 210 and 220 may include a material having a high reflectivity, and the electrodes 210 and 220 disposed on the inclined side surfaces of the inner dams 410 and 420 may reflect the incident light in the upward direction with respect to the first substrate 101. However, the present invention is not limited thereto.

[0136] The fourth insulating layer 550 may be entirely disposed on the first substrate 101. The fourth insulating layer 550 can be used to protect the components disposed on the first substrate 101 from the external environment.

[0137] Each of the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the fourth insulating layer 550 described above may include an inorganic insulating material or an organic insulating material. In an embodiment, the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the fourth insulating layer 550 may all include, for example, silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al x O y ), or aluminum nitride (Al x N y) and other inorganic insulating materials. Optionally, the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the fourth insulating layer 550 may each include an organic insulating material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a PI resin, an unsaturated polyester resin, a polyphenylene resin, a polyphenylene sulfide resin, a benzocyclobutene, a cardo resin, a silicone resin, a silsesquioxane resin, a polymethyl methacrylate, a polycarbonate, or a polymethyl methacrylate-polycarbonate synthetic resin. However, the present invention is not limited thereto.

[0138] Meanwhile, the light-emitting element 300 may be a light-emitting diode, specifically, an inorganic light-emitting diode having a size in the micron unit or nanometer unit and made of an inorganic material. The inorganic light-emitting diode may be aligned between two electrodes in which an electric field is formed in a specific direction between two electrodes facing each other. The light-emitting element 300 may be aligned between the two electrodes due to the electric field formed on the two electrodes.

[0139] The light-emitting element 300 according to one embodiment may have a shape extending in one direction. The light-emitting element 300 may have a shape such as a rod shape, a linear shape, or a tubular shape. In an embodiment, the light-emitting element 300 may have a cylindrical shape or a rod shape. However, the shape of the light-emitting element 300 is not limited thereto, and the light-emitting element 300 may have a shape of a cube, a rectangular parallelepiped, a polygonal column such as a hexagonal column, or a shape having an outer surface that extends in one direction and has a partial inclination. Therefore, the light-emitting element 300 may have various shapes.

[0140] The light-emitting element 300 may include a semiconductor core SC (see Figure 5 ) and an insulating film 380 surrounding the semiconductor core (see Figure 4 ). The semiconductor core of the light-emitting element 300 may include a semiconductor layer doped with impurities of any conductive type (e.g., p-type or n-type). The semiconductor layer may receive an electrical signal applied from an external power source and emit light in a specific wavelength range.

[0141] Figure 4 is a schematic diagram of a light-emitting element according to one embodiment. Figure 5 is Figure 4 a schematic cross-sectional view of the light-emitting element. Figure 4 is a schematic diagram in which a partial area of the light-emitting element 300 is cut, Figure 5 is a cross-sectional view of the light-emitting element 300 taken along the extending direction.

[0142] Referring to Figure 4 and Figure 5, the light-emitting element 300 may be formed such that each of the plurality of semiconductor layers partially surrounds the outer surface of another layer. The light-emitting element 300 may include a semiconductor core SC whose at least a partial region extends in one direction and an insulating film 380 that partially surrounds the outer surface of the semiconductor core SC.

[0143] The light-emitting element 300 may include a first semiconductor layer 310, a second semiconductor layer 320, an active layer 330, an electrode layer 370, and an insulating film 380. The semiconductor core SC of the light-emitting element 300 may at least include the first semiconductor layer 310, the second semiconductor layer 320, and the active layer 330. Additionally, as shown in the drawings, the semiconductor core SC may further include the electrode layer 370. The semiconductor core SC may include the first semiconductor layer 310 extending in one direction and the active layer 330 and the second semiconductor layer 320 sequentially stacked while surrounding the outer surface of the first semiconductor layer 310.

[0144] According to one embodiment, the semiconductor core SC of the light-emitting element 300 may include a main body 300A and a first end 300B and a second end 300C connected to the main body 300A. Some of the semiconductor core SC, the light-emitting element 300, or the semiconductor layers constituting the semiconductor core SC or the light-emitting element 300 are defined with reference to the main body 300A, the first end 300B, and the second end 300C, and the main body 300A, the first end 300B, and the second end 300C may be integrally formed to constitute one semiconductor core SC rather than being separated from each other. That is, the main body 300A, the first end 300B, and the second end 300C may be referred to as distinct partial regions of the semiconductor core SC. Additionally, it can be understood that the main body 300A, the first end 300B, and the second end 300C to be described below are not necessarily limited to referring to partial regions of the semiconductor core SC including all of the plurality of semiconductor layers, but rather refer to partial regions of some components (e.g., partial regions of the first semiconductor layer 310, partial regions of the active layer 330, and partial regions of the second semiconductor layer 320, etc.).

[0145] The main body 300A of the semiconductor core SC may have a shape extending in one direction. The outer surface of the cross-section of the main body 300A extending in one direction may be formed to be flat. In some embodiments, the main body 300A may have a cylindrical shape, a rod shape, or a polygonal column shape, but the present invention is not limited thereto.

[0146] The first end 300B of the semiconductor core SC may be a part connected to one side of the main body 300A. Different from the main body 300A, the first end 300B may have a shape with an inclined outer surface. The first end 300B may have a conical shape such that its inclined outer surfaces meet at one end of the semiconductor core SC. In the main body 300A and the first end 300B, the active layer 330, the second semiconductor layer 320, and the electrode layer 370 may be sequentially disposed around the first semiconductor layer 310 provided at the central portion of the main body 300A and the first end 300B.

[0147] The second end 300C of the semiconductor core SC may be a part connected to the other side of the main body 300A. The second end 300C has a shape substantially the same as that of the main body 300A and may have a diameter different from the diameter of the main body 300A. According to one embodiment, the diameter WB of the main body 300A of the semiconductor core SC may be greater than the minimum diameter WC and the maximum diameter of the second end 300C. The second end 300C may be formed to have a width smaller than the width of the main body 300A and may have a shape in which its outer surface is recessed from the outer surface of the main body 300A toward the central portion at the part connected to the main body 300A. Accordingly, a step difference may be formed on the semiconductor core SC at the part where the main body 300A and the second end 300C are connected.

[0148] Different from the main body 300A of the semiconductor core SC, the second end 300C may include only the first semiconductor layer 310. That is, the main body 300A and the second end 300C may have different layers sequentially disposed with respect to the first semiconductor layer 310 toward the outer surface of the semiconductor core SC. Accordingly, the diameter WB of the main body 300A may be greater than the minimum diameter WC of the second end 300C. In addition, as will be described below, in the first semiconductor layer 310, the part corresponding to the main body 300A may be greater in diameter than the part corresponding to the second end 300C. This may be caused by a structure formed during the manufacturing process of the light-emitting element 300 when the first semiconductor layer 310 is grown.

[0149] When the multiple layers constituting the semiconductor core SC are described in more detail, the first semiconductor layer 310 may be an n-type semiconductor. As an example, when the light-emitting element 300 emits light in the blue wavelength range, the first semiconductor layer 310 may include a chemical formula of Al x Ga y In 1-x-yA semiconductor material of N(0≤x≤1, 0≤y≤1, and 0≤x + y≤1). For example, the semiconductor material can be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with n-type impurities. The first semiconductor layer 310 can be doped with an n-type dopant. As an example, the n-type dopant can be Si, Se, Ge, or Sn, etc. In an embodiment, the first semiconductor layer 310 can be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 can be in the range of 1.5 μm to 5 μm, but the present invention is not limited thereto.

[0150] According to one embodiment, the first semiconductor layer 310 can include a first portion NR1 corresponding to the main body 300A of the semiconductor core SC, a second portion NR2 corresponding to the first end 300B, and a third portion NR3 corresponding to the second end 300C. Similar to the main body 300A of the semiconductor core SC, the first portion NR1 can have a shape extending in one direction. The first portion NR1 can have a shape substantially the same as the shape of the main body 300A, but the present invention is not limited thereto, and the main body 300A can have different diameters according to the position. Although the first portion NR1 is shown in the drawings as having a constant diameter, in some embodiments, the first portion NR1 can have a shape in which the diameter increases toward the second portion NR2.

[0151] The second portion NR2 can be a portion located on one side of the first portion NR1 and can be formed such that its outer surface is inclined. The second portion NR2 can extend to one side of the first portion NR1 and can be formed such that its cross-sectional side surface is inclined. That is, the second portion NR2 can have a conical shape, and the first end 300B can have a conical shape according to the shape of the second portion NR2. However, the present invention is not limited thereto.

[0152] The third portion NR3 can be a portion located on the other side of the first portion NR1. Similar to the first portion NR1, the third portion NR3 can have a shape extending in one direction. According to one embodiment, in the first semiconductor layer 310, the diameter of the first portion NR1 can be greater than the diameter of the third portion NR3. As shown in the accompanying drawings, the third portion NR3 of the first semiconductor layer 310 has a diameter smaller than that of the first portion NR1, and can have a shape in which its outer surface is recessed from the outer surface of the first portion NR1 toward the center at the portion connected to the first portion NR1 of the first semiconductor layer 310. In the formation process of the first semiconductor layer 310, this structure can be formed by forming the third portion NR3 and then further depositing the material constituting the first semiconductor layer 310 to form the first portion NR1. When forming the first semiconductor layer 310, the first portion NR1 can be formed by further growing the semiconductor crystal only in a partial region of the semiconductor crystal extending in one direction. In addition, the diameter of the third portion NR3 can become smaller from the region adjacent to the first portion NR1 toward the opposite region. However, the present invention is not limited thereto.

[0153] The second semiconductor layer 320 is provided to surround the active layer 330 to be described below, as well as the first portion NR1 and the second portion NR2 of the first semiconductor layer 310. The second semiconductor layer 320 can be a p-type semiconductor. As an example, when the light-emitting element 300 emits light in the blue wavelength range or the green wavelength range, the second semiconductor layer 320 can include a semiconductor material having the chemical formula Al x Ga y In 1-x-y N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, and 0 ≤ x + y ≤ 1). For example, the semiconductor material can be one or more of AlGaInN, GaN, AlGaN, InGaN, AlN, and InN doped with a p-type impurity. The second semiconductor layer 320 can be doped with a p-type dopant. As an example, the p-type dopant can be Mg, Zn, Ca, or Ba, etc. In an embodiment, the second semiconductor layer 320 can be p-GaN doped with p-type Mg. The thickness of the second semiconductor layer 320 can be in the range of 0.05 μm to 0.10 μm, but the present invention is not limited thereto.

[0154] Meanwhile, each of the first semiconductor layer 310 and the second semiconductor layer 320 is shown in the accompanying drawings as being formed as one layer, but the present invention is not limited thereto. According to some embodiments, depending on the material of the active layer 330, each of the first semiconductor layer 310 and the second semiconductor layer 320 can also include a greater number of layers (e.g., a cap layer or a tensile strain barrier reduction (TSBR) layer).

[0155] The active layer 330 is disposed between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may be disposed to surround a first portion NR1 of the first semiconductor layer 310 and be disposed between the first semiconductor layer 310 and the second semiconductor layer 320 in the body 300A of the semiconductor core SC. As will be described below, the active layer 330 may include quantum layers to emit light within a specific wavelength range. The wavelength range of the light emitted from the active layer 330 may vary according to the content of the material included in the quantum layer. In addition, the content of the material included in the quantum layer of the active layer 330 may vary according to the lattice constant of the first semiconductor layer 310 on which the active layer 330 is disposed. The lattice constant of the first semiconductor layer 310 may vary according to the material of the first semiconductor layer 310 or the diameter or shape of the first semiconductor layer 310.

[0156] The first semiconductor layer 310 may include a first portion NR1 having a flat outer surface in a cross section and second and third portions NR2 and NR3 each having an inclined outer surface or a different diameter in the cross section, and each of them may have a different lattice constant. When the active layer 330 completely surrounds the first semiconductor layer 310, the content of the material included in the quantum layer may vary according to the position where the active layer 330 is disposed, thereby emitting light having different wavelength ranges. Since the active layer 330 is disposed only on the first portion NR1 of the first semiconductor layer 310, the light-emitting element 300 according to one embodiment may emit light within a predetermined wavelength range by including quantum layers having the same material content. Additionally, the active layer 330 is not disposed in the second portion NR2, and the second portion NR2 of the first semiconductor layer 310 may be in contact with the second semiconductor layer 320. However, the present invention is not limited thereto, and in some embodiments, the active layer 330 may be disposed on the second portion NR2 of the first semiconductor layer 310.

[0157] The active layer 330 may include a material having a single quantum well structure or a multi - quantum well structure. When the active layer 330 includes a material having a multi - quantum well structure, the active layer 330 may have a structure in which quantum layers and well layers are alternately stacked. The active layer 330 may emit light due to the recombination of electron - hole pairs in response to an electrical signal applied through the first semiconductor layer 310 and the second semiconductor layer 320. As an example, when the active layer 330 emits light in the blue wavelength range, the active layer 330 may include materials such as AlGaN or AlGaInN. In particular, when the active layer 330 has a multi - quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layer may include materials such as AlGaN or AlGaInN, and the well layer may include materials such as GaN or AlInN. In an embodiment, the active layer 330 includes AlGaInN as the quantum layer and AlInN as the well layer. As described above, the active layer 330 may emit blue light having a central wavelength range in the range of 450 nm to 495 nm.

[0158] However, the present invention is not limited thereto. The active layer 330 may have a structure in which a semiconductor material having a large bandgap and a semiconductor material having a small bandgap are alternately stacked, or may include other group - III or group - V semiconductor materials according to the wavelength range of the emitted light. The light emitted by the active layer 330 is not limited to light in the blue wavelength range. In some cases, the active layer 330 may also emit light in the red wavelength range or the green wavelength range. The thickness of the active layer 330 may be in the range of 0.05 μm to 0.10 μm, but the present invention is not limited thereto.

[0159] Meanwhile, the light emitted from the active layer 330 can be emitted not only to the outer surface of the light - emitting element 300 in the longitudinal direction, but also to the two side surfaces of the light - emitting element 300. The directivity of the light emitted from the active layer 330 is not limited to one direction.

[0160] The electrode layer 370 may be an ohmic contact electrode. However, the present invention is not limited thereto, and the electrode layer 370 may also be a Schottky contact electrode. The light - emitting element 300 may include at least one electrode layer 370. Although the light - emitting element 300 is shown in Figure 4 and Figure 5 as including a single electrode layer 370, the present invention is not limited thereto. In some cases, the light - emitting element 300 may include a larger number of electrode layers 370, or the electrode layer 370 may be omitted. Even if the number of electrode layers 370 is changed or other structures are further included, the description of the light - emitting element 300 provided below can be equally applicable.

[0161] The electrode layer 370 may be disposed on the second semiconductor layer 320. For example, the electrode layer 370 may be directly disposed on the second semiconductor layer 320 to be formed around the outer surface of the second semiconductor layer 320. The electrode layer 370 may have a shape substantially the same as that of the second semiconductor layer 320. That is, the electrode layer 370 may be disposed on the body 300A and the first end 300B of the semiconductor core SC to correspond to the first portion NR1 and the second portion NR2 of the first semiconductor layer 310.

[0162] When the light-emitting element 300 is electrically connected to the electrodes 210 and 220 or the contact electrode 260, the electrode layer 370 may reduce the resistance between the light-emitting element 300 and the electrode or the contact electrode. The electrode layer 370 may include a conductive metal. For example, the electrode layer 370 may include at least one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). In addition, the electrode layer 370 may include a semiconductor material doped with an n-type impurity or a p-type impurity. However, the present invention is not limited thereto.

[0163] The insulating film 380 is disposed on the outer surface of the semiconductor core SC. The insulating film 380 is disposed to surround the outer surface of the semiconductor core SC and may be used to protect the semiconductor core SC. As described above, the light-emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220, and the outer surface of the light-emitting element 300 may be in direct contact with other layers (e.g., the first insulating layer 510, the second insulating layer 520, and the contact electrode 260). The insulating film 380 may protect the semiconductor core SC from the influence of other layers in contact with the light-emitting element 300.

[0164] The thickness of the insulating film 380 may be in the range of 10 nm to 1.0 μm, but the present invention is not limited thereto. Preferably, the thickness of the insulating film 380 may be about 40 nm.

[0165] The insulating film 380 may include a material having insulating properties (e.g., silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (Al x N y ), aluminum oxide (Al x O y ) or an organic insulating material, etc.). Therefore, an electrical short circuit that may occur when the active layer 330 is in direct contact with the electrodes through which an electrical signal is transmitted to the light-emitting element 300 can be prevented. In addition, since the insulating film 380 protects the outer surface of the light-emitting element 300 including the active layer 330, a deterioration in light-emitting efficiency can be prevented.

[0166] In addition, in some embodiments, the outer surface of the insulating film 380 may be surface-treated. When manufacturing the display device 10, the light-emitting elements 300 may be aligned by being ejected in a state of being dispersed in a predetermined ink onto the electrodes. Here, in order to maintain the state in which the light-emitting elements 300 are dispersed in the ink without aggregating with another adjacent light-emitting element 300, the surface of the insulating film 380 may be treated to be hydrophobic or hydrophilic.

[0167] Meanwhile, the insulating film 380 may include a portion of a region surrounding the outer surface of the semiconductor core SC in which at least the side surface of the semiconductor core SC is inclined or stepped. According to one embodiment, the insulating film 380 may include a first insulating film 380A surrounding the first end 300B of the semiconductor core SC and a second insulating film 380B surrounding the second end 300C. The first insulating film 380A may be directly disposed on the electrode layer 370 of the semiconductor core SC, and the second insulating film 380B may be disposed to surround the third portion NR3 of the first semiconductor layer 310.

[0168] The insulating film 380 may be disposed to surround the outer surface of the semiconductor core SC having an inclined or stepped portion such that the light-emitting elements 300 may have a constant diameter. In one embodiment, the insulating film 380 may not be disposed on the outer surface of the main body 300A of the semiconductor core SC, and may include a first insulating film 380A surrounding the first end 300B having an inclined outer surface and a second insulating film 380B surrounding the outer surface of the second end 300C on which a step difference is formed. According to one embodiment, the thickness of each of the first insulating film 380A and the second insulating film 380B may be changed according to the shape of the outer surface of the semiconductor core SC, and the light-emitting elements 300 may have a constant diameter regardless of the shape of the semiconductor core SC.

[0169] For example, the diameter of the first end 300B may decrease from the side where it is connected to the main body 300A toward the other side, and the thickness of the first insulating film 380A surrounding the first end 300B may increase from one side to the other side of the first end 300B. That is, the sum of the diameter of the first end 300B and the thickness of the first insulating film 380A may be substantially constant. Similarly, the second end 300C may have a width smaller than the width of the main body 300A and may be formed to be inclined on its side surface, and the thickness of the second insulating film 380B may be changed according to the position. However, the sum of the diameter of the second end 300C and the thickness of the second insulating film 380B may be substantially constant.

[0170] According to one embodiment, the maximum thickness IW1 of the first insulating film 380A may be greater than the maximum thickness IW2 of the second insulating film 380B. Each of the outermost surfaces of the first insulating film 380A and the second insulating film 380B may have a constant diameter such that its outer surface is not inclined. As described above, the thickness of each of the first insulating film 380A and the second insulating film 380B may be changed such that the sum of the thickness of the first insulating film 380A and the diameter of the first end 300B and the sum of the thickness of the second insulating film 380B and the diameter of the second end 300C are constant, respectively. Since the first end 300B has a conical shape from the main body 300A toward the opposite side of the main body 300A, the minimum diameter of the first end 300B may be smaller than the minimum diameter WC of the second end 300C. Therefore, the maximum thickness IW1 of the first insulating film 380A around the first end 300B may be greater than the maximum thickness IW2 of the second insulating film 380B around the second end 300C. On the contrary, the first end 300B has the same diameter as the main body 300A at the portion connected to the main body 300A, while the diameter of the second end 300C is smaller than the diameter WB of the main body 300A. Therefore, the minimum thickness of the first insulating film 380A may be smaller than the minimum thickness of the second insulating film 380B.

[0171] In an embodiment, the outer surface of each of the first insulating film 380A and the second insulating film 380B may form a flat surface with the outer surface of the main body 300A of the semiconductor core SC in a cross section. That is, the cross-sectional outer surfaces of each of the first insulating film 380A, the second insulating film 380B, and the main body 300A may be collinear with each other. The semiconductor core SC may include a first end 300B having an inclined side surface and a second end 300C recessed from the outer surface of the main body 300A and having a width smaller than the width of the main body 300A. That is, the side surface of the semiconductor core SC may be inclined or stepped on the basis of the main body 300A according to the shape of the first semiconductor layer 310. In the light-emitting element 300 according to one embodiment, the insulating film 380 may be formed to correspond to the inclined portion or the stepped portion of the semiconductor core SC.

[0172] The first insulating film 380A and the second insulating film 380B surround the first end 300B and the second end 300C, respectively, and the outer surfaces of the first insulating film 380A and the second insulating film 380B may be coplanar with the outer surface of the main body 300A. That is, the thickness of each of the first insulating film 380A and the second insulating film 380B may be changed according to the position, and the diameter of its outer surface may be constant. According to one embodiment, the first insulating film 380A and the second insulating film 380B may be provided to compensate for the step difference of the outer surface of the semiconductor core SC, and the light-emitting element 300 may have a shape extending in one direction with a constant diameter.

[0173] When the side surface of the light-emitting element 300 is inclined or stepped, an empty space may be formed between the light-emitting element 300 and the first insulating layer 510 disposed below the light-emitting element 300. However, the light-emitting element 300 according to an embodiment includes an insulating film 380 provided on the outer surface of the semiconductor core SC, so that the light-emitting element 300 can be disposed on the first insulating layer 510 without an empty space formed thereunder, and disconnection or contact failure can be minimized in the material of the contact electrodes 260 that are in contact with both ends of the light-emitting element 300.

[0174] The second insulating film 380B may be provided to surround the third portion NR3 of the first semiconductor layer 310, and the lower surface of the first semiconductor layer 310 may be provided to be exposed. The exposed lower surface of the first semiconductor layer 310 may be in direct contact with the second contact electrode 262 of the display device 10. In addition, the second insulating film 380B may also be in direct contact with the active layer 330, the second semiconductor layer 320, and the electrode layer 370 that are exposed at the lower surface of the main body 300A. The second insulating film 380B is an end portion of the light-emitting element 300, and can prevent the second contact electrode 262 in contact with the first semiconductor layer 310 from being in direct contact with the second semiconductor layer 320. That is, the insulating film 380 may be provided to surround the outer surface of the semiconductor core SC to prevent a short circuit between the first contact electrode 261 and the second contact electrode 262. In addition, since the second insulating film 380B is provided to surround the side surface of the second end 300C of the semiconductor core SC, the second insulating film 380B can prevent the second end 300C of the semiconductor core SC (i.e., the first semiconductor layer 310) from being damaged during the manufacturing process of the light-emitting element 300.

[0175] Meanwhile, as shown in the drawings, the insulating film 380 may not be provided on the main body 300A of the semiconductor core SC having a flat outer surface. Therefore, in the light-emitting element 300, the insulating film 380 may be provided such that the outer surface of the main body 300A that is part of the semiconductor core SC is exposed. However, the present invention is not limited thereto. In some embodiments, the insulating film 380 may further include a portion provided to surround the main body 300A of the semiconductor core SC. In this case, the first insulating film 380A and the second insulating film 380B may form a flat outer surface together with the portion surrounding the main body 300A. This will be described with reference to other embodiments below.

[0176] The light-emitting element 300 may have a length H in the range of 1 μm to 10 μm or in the range of 2 μm to 6 μm (preferably in the range of 3 μm to 5 μm). Additionally, the diameter of the light-emitting element 300 may be in the range of 300 nm to 700 nm, and the aspect ratio of the light-emitting element 300 may be in the range of 1.2 to 100. However, the present invention is not limited thereto, and the plurality of light-emitting elements 300 included in the display device 10 may have different diameters according to the compositional differences of the active layer 330. Preferably, the diameter of the light-emitting element 300 may be about 500 nm.

[0177] Figure 6 is Figure 3 an enlarged view of a portion Q1 of.

[0178] Figure 6 shows a Figure 3 magnified view of the light-emitting element 300 disposed between the first electrode 210 and the second electrode 220 in. Referring to Figure 6 , the light-emitting element 300 may be disposed on the first insulating layer 510 between the first electrode 210 and the second electrode 220. The light-emitting element 300 may be disposed between the first insulating layer 510 and the second insulating layer 520, and its outer surface may be in partial direct contact with each of the first insulating layer 510 and the second insulating layer 520.

[0179] The active layer 330 of the light-emitting element 300 may be disposed to surround a first portion NR1 of the first semiconductor layer 310, and the light generated from the active layer 330 may be emitted at least to the side surface of the light-emitting element 300. The light travels in an upward direction with respect to the first substrate 101 through the second insulating layer 520, the third insulating layer 530, etc. However, the present invention is not limited thereto, and some of the light emitted from the light-emitting element 300 may be emitted through both ends of the light-emitting element 300. In this case, the light emitted through both ends of the light-emitting element 300 may be reflected by the electrodes 210 and 220 disposed on the first inner bank 410 and the second inner bank 420.

[0180] Meanwhile, as described above, the light-emitting element 300 includes a semiconductor core SC whose outer surface is inclined or stepped and an insulating film 380 disposed to compensate for the step difference of the outer surface of the semiconductor core SC. According to an embodiment, at least one surface of the light-emitting element 300 included in the display device 10 that contacts the first insulating layer 510 may have a flat surface. As shown in the drawings, the light-emitting element 300 shown in cross section may include a lower surface facing the first insulating layer 510 and an upper surface facing the second insulating layer 520.

[0181] A part of the outer surface of the light-emitting element 300 (i.e., at least a part of its lower surface) may be in direct contact with the first insulating layer 510. The surface of the light-emitting element 300 in direct contact with the first insulating layer 510 may include the insulating film 380 and the main body 300A of the semiconductor core SC, and thus includes a flat surface. As described above, the insulating film 380 of the light-emitting element 300 may be provided to compensate for the inclined surface or step difference formed on the outer surface of the semiconductor core SC. The light-emitting element 300 provided on the first insulating layer 510 may form a flat surface on at least one surface thereof in contact with the first insulating layer 510. The part of the light-emitting element 300 in direct contact with the first insulating layer 510 may be the first insulating film 380A and the second insulating film 380B, but the present invention is not limited thereto. In some cases, in the light-emitting element 300, the insulating film 380 may not be provided, and the exposed main body 300A of the semiconductor core SC may be in direct contact with the first insulating layer 510.

[0182] In addition, as described above, the upper surface of the first insulating layer 510 may have a step difference formed along the electrodes 210 and 220 provided therebelow, and a space may be formed between the lower surface of the light-emitting element 300 and the first insulating layer 510. In some embodiments, the space may be filled with the second insulating layer 520. In this case, the lower surface of the light-emitting element 300 may be in partial direct contact with the second insulating layer 520. The part in contact with the second insulating layer 520 may be the main body 300A of the semiconductor core SC and the insulating film 380, but the present invention is not limited thereto.

[0183] Meanwhile, in the light-emitting element 300, the first end 300B of the semiconductor core SC may be arranged to overlap with the first electrode 210 in the thickness direction, and the second end 300C may be arranged to overlap with the second electrode 220 in the thickness direction. According to one embodiment, the length H of the light-emitting element 300 may be greater than the separation distance between the first electrode 210 and the second electrode 220. However, the present invention is not limited thereto.

[0184] Meanwhile, one end of the light-emitting element 300 may be in contact with the first contact electrode 261, and the other end thereof may be in contact with the second contact electrode 262. For example, in the light-emitting element 300, one end where the first end 300B of the semiconductor core SC is located may be in contact with the first contact electrode 261, and the other end where the second end 300C of the semiconductor core SC is located may be in contact with the second contact electrode 262.

[0185] As will be described below, in the process of forming the first contact electrode 261 and the second contact electrode 262, the light-emitting element 300 may be patterned together with the second insulating layer 520, and a part of the insulating film 380 may be removed. As an example, in the insulating film 380 of the light-emitting element 300, a part (or the first insulating film 380A and the second insulating film 380B) in the upper part in the cross section and in contact with the second insulating layer 520 may be partially removed, so that the semiconductor core SC may be partially exposed. For example, the first insulating film 380A may be removed so that the side surface of the first end 300B of the semiconductor core SC is partially exposed, and may include a first residue 380A1 located between the first end 300B and the first insulating layer 510 and a second residue 380A2 located between the first end 300B and the second insulating layer 520. The second insulating film 380B may be removed so that the side surface of the second end 300C of the semiconductor core SC is partially exposed, and may include a third residue 380B1 located between the second end 300C and the first insulating layer 510 and a fourth residue 380B2 located between the second end 300C and the second insulating layer 520. In the semiconductor core SC, a part of the electrode layer 370 of the first end 300B and a part of the first semiconductor layer 310 of the second end 300C may be exposed.

[0186] The first contact electrode 261 may be in contact with the exposed first end 300B, which is one end of the light-emitting element 300, and the first residue 380A1 and the second residue 380A2 of the first insulating film 380A. The second contact electrode 262 may be in contact with the exposed second end 300C, which is the other end of the light-emitting element 300, and the third residue 380B1 and the fourth residue 380B2 of the second insulating film 380B. The first contact electrode 261 and the second contact electrode 262 may be in contact with one end and the other end of the light-emitting element 300 respectively to form a plurality of contact surfaces CSA and CSB.

[0187] The contact surfaces CSA and CSB may include a first contact surface CSA formed by the first contact electrode 261 and a second contact surface CSB formed by the second contact electrode 262. Additionally, according to an embodiment, the first contact surface CSA and the second contact surface CSB may include surfaces that are in contact with the semiconductor core SC and the insulating film 380 of the light-emitting element 300 respectively and are not parallel to each other. For example, the first contact surface CSA may include a first surface CS1 formed by the first end 300B of the semiconductor core SC, a second surface CS2 formed by the first residue 380A1 of the first insulating film 380A, and a third surface CS3 formed by the second residue 380A2. The second contact surface CSB may include a fourth surface CS4 and a fifth surface CS5 formed by the second end 300C of the semiconductor core SC, a sixth surface CS6 formed by the third residue 380B1 of the second insulating film 380B, and a seventh surface CS7 formed by the fourth residue 380B2.

[0188] The first surface CS1 of the first contact surface CSA may be a surface where the first contact electrode 261 contacts the first end 300B of the semiconductor core SC, and the light-emitting element 300 may receive an electrical signal through the first contact electrode 261 at the first surface CS1. The first surface CS1 may be formed along the inclined surface of the first end 300B. According to an embodiment, the first contact surface CSA formed by the first contact electrode 261 that contacts one end of the light-emitting element 300 may include a first surface CS1 that is not parallel to the upper surface of the first substrate 101 or the upper surface of the first planarization layer 109.

[0189] Similarly, the fourth surface CS4 and the fifth surface CS5 of the second contact surface CSB are surfaces where the second contact electrode 262 contacts the second end 300C of the semiconductor core SC, and the light-emitting element 300 may receive an electrical signal through the second contact electrode 262 at the fourth surface CS4 and the fifth surface CS5. The fourth surface CS4 may be a part of the second end 300C or the side surface of the first semiconductor layer 310 that is exposed in the process of forming the second insulating layer 520, and the fifth surface CS5 may be a part of the lower surface of the light-emitting element 300 and may be the lower surface of the first semiconductor layer 310. The fourth surface CS4 may be formed along the inclined surface of the second end 300C. According to an embodiment, the second contact surface CSB formed by the second contact electrode 262 that contacts the other end of the light-emitting element 300 may include a fourth surface CS4 that is not parallel to the upper surface of the first substrate 101 or the upper surface of the first planarization layer 109.

[0190] In addition, the first contact surface CSA and the second contact surface CSB may further include contact surfaces perpendicular to the upper surface of the first substrate 101 or the upper surface of the first planarization layer 109. For example, the second surface CS2 formed by the first contact electrode 261 and the first residue 380A1 and the third surface CS3 formed by the second residue 380A2 may be perpendicular to the upper surface of the first substrate 101. The sixth surface CS6 formed by the second contact electrode 262 and the third residue 380B1 and the seventh surface CS7 formed by the fourth residue 380B2 may be perpendicular to the upper surface of the first substrate 101.

[0191] The light-emitting element 300 according to an embodiment may include a first insulating film 380A and a second insulating film 380B to compensate for the inclined side surfaces and step differences of the semiconductor core SC. In the light-emitting element 300 included in the display device 10, the first insulating film 380A and the second insulating film 380B may respectively include a first residue 380A1 and a third residue 380B1 located between the semiconductor core SC and the first insulating layer 510. The first contact electrode 261 and the second contact electrode 262 in contact with both ends of the light-emitting element 300 may be disposed to be in contact with the first residue 380A1 and the third residue 380B1 located between the semiconductor core SC and the first insulating layer 510, respectively. The first residue 380A1 and the third residue 380B1 may fill the empty spaces that may be formed between both ends of the semiconductor core SC and the first insulating layer 510, and may prevent disconnection of materials due to the empty spaces when the contact electrodes 261 and 262 are formed. That is, the light-emitting element 300 according to an embodiment includes the first insulating film 380A and the second insulating film 380B to form smooth contact with the contact electrodes 261 and 262.

[0192] In addition, the first contact electrode 261 and the second contact electrode 262 may also be in contact with the second residue 380A2 and the fourth residue 380B2, respectively. According to an embodiment, the second residue 380A2 and the fourth residue 380B2 may be portions of the insulating film 380 of the light-emitting element 300 that remain in the process of forming the contact electrodes 261 and 262 and are in direct contact with the second insulating layer 520. In the light-emitting element 300, the main body 300A of the semiconductor core SC may be exposed without being surrounded by the insulating film 380. Since the second residue 380A2 and the fourth residue 380B2 are disposed between the second insulating layer 520 and the semiconductor core SC, direct contact between the first contact electrode 261 and the second contact electrode 262 and the main body 300A can be prevented. For example, the fourth residue 380B2 can prevent a short circuit between the first contact electrode 261 and the second contact electrode 262 by preventing the second contact electrode 262 from directly contacting the electrode layer 370 or the second semiconductor layer 320 of the main body 300A.

[0193] The second insulating layer 520 may be disposed to surround the side surface of the light-emitting element 300. According to one embodiment, the second insulating layer 520 may directly contact a part of each of the insulating film 380 and the main body 300A of the semiconductor core SC at the side surface of the light-emitting element 300. The main body 300A of the semiconductor core SC may be exposed without being surrounded by the insulating film 380 and may directly contact the second insulating layer 520. In particular, in addition to the second insulating layer 520 disposed on the light-emitting element 300, the main body 300A may also directly contact the second insulating layer 520 disposed between the light-emitting element 300 and the first insulating layer 510.

[0194] The second insulating layer 520 may be formed to have a predetermined width such that the insulating film 380 of the light-emitting element 300 may include a second residue 380A2 and a fourth residue 380B2. According to one embodiment, the width DW of the second insulating layer 520 may be greater than the width or length HA of the main body 300A of the semiconductor core SC (see Figure 4 ). Thus, in the semiconductor core SC, only the first end 300B and the second end 300C may be partially exposed, while the main body 300A may not be exposed.

[0195] According to one embodiment, since the light-emitting element 300 includes the insulating film 380, a space may not be formed between the semiconductor core SC and the first insulating layer 510, and undercut that may occur between the contact electrodes 261 and 262 contacting both ends of the light-emitting element 300 and the first insulating layer 510 may be prevented. The display device 10 may have a smooth contact surface between the light-emitting element 300 and each of the contact electrodes 261 and 262, thereby preventing disconnection of the materials forming the contact electrodes 261 and 262.

[0196] Meanwhile, the light-emitting element 300 may be manufactured by an epitaxial growth method that forms a semiconductor layer by growing a semiconductor crystal. The light-emitting element 300 may be manufactured by sequentially forming a first semiconductor layer 310, an active layer 330, a second semiconductor layer 320, and an electrode layer 370 on a lower substrate, and then forming an insulating film 380 that partially surrounds the outer surface of each of the first semiconductor layer 310, the active layer 330, the second semiconductor layer 320, and the electrode layer 370.

[0197] Hereinafter, a manufacturing process of the light-emitting element 300 according to one embodiment will be described with reference to other drawings.

[0198] Figures 7 to 14 is a cross-sectional view showing a manufacturing process of a light-emitting element according to one embodiment.

[0199] Refer toFigures 7 to 14 According to one embodiment, the light-emitting element 300 can be manufactured by growing a semiconductor core SC on a lower substrate and forming an insulating film 380 around the outer surface of each of the semiconductor cores SC. In the process of forming the insulating film 380, the insulating film 380 can be formed such that the outer surface of the light-emitting element 300 has a flat surface even when the side surface of the semiconductor core SC is inclined or stepped.

[0200] First, as Figure 7 shown in, a lower substrate 2000 including a base substrate 2100 and a buffer material layer 2200 formed on the base substrate 2100 is prepared, and a sub-semiconductor layer 3100 and a mask layer 1600 are formed on the lower substrate 2000.

[0201] The base substrate 2100 may include a sapphire (Al2O3) substrate and a transparent substrate such as glass. However, the present invention is not limited thereto, and the base substrate 2100 may be formed as a conductive substrate such as a GaN, SiC, ZnO, Si, GaP, or GaAs substrate. Hereinafter, as an example, the case where the base substrate 2100 is a sapphire (Al2O3) substrate will be described.

[0202] A plurality of semiconductor layers can be formed on the base substrate 2100. A plurality of semiconductor layers grown by an epitaxial method can be formed by growing a seed crystal. Here, the method of forming the semiconductor layer may include an electron beam deposition method, a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, a plasma laser deposition (PLD) method, a dual-type thermal evaporation method, a sputtering method, or a metal organic chemical vapor deposition (MOCVD) method, etc., preferably, the MOCVD method. However, the present invention is not limited thereto. Hereinafter, the method and process conditions for forming a plurality of semiconductor layers, etc. will be omitted in the description, and the manufacturing method and stacking structure sequence of the light-emitting element 300 will be described in detail.

[0203] A buffer material layer 2200 can be formed on the base substrate 2100. In the drawings, one buffer material layer 2200 is shown as being stacked, but the present invention is not limited thereto, and a plurality of buffer layers can be formed. The buffer material layer 2200 can be provided to reduce the lattice constant difference between the first semiconductor layer 310 and the base substrate 2100.

[0204] As an example, the buffer material layer 2200 may include an undoped semiconductor, may include a material substantially the same as that of the first semiconductor layer 310, and may include a material that is not doped with an n-type dopant or a p-type dopant. In an embodiment, the buffer material layer 2200 may include at least one selected from undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but the present invention is not limited thereto. Additionally, the buffer material layer 2200 may be omitted depending on the substrate substrate 2100.

[0205] A sub-semiconductor layer 3100 may be formed on the buffer material layer 2200. The sub-semiconductor layer 3100 may include the same material as that of the first semiconductor layer 310. As an example, the sub-semiconductor layer 3100 may include an n-type semiconductor layer. The sub-semiconductor layer 3100 may provide a seed crystal for the first semiconductor layer 310 formed by an epitaxial growth method.

[0206] A mask layer 1600 may be formed on the sub-semiconductor layer 3100. The mask layer 1600 may provide a space in which the first semiconductor layer 310 grows. Etching holes exposing a part of the sub-semiconductor layer 3100 may be formed in the mask layer 1600, and crystals growing from the sub-semiconductor layer 3100 through the etching holes may form the first semiconductor layer 310. In one embodiment, the mask layer 1600 may include a first mask layer 1610, a second mask layer 1620, and a third mask layer 1630. The first mask layer 1610 may be formed on the sub-semiconductor layer 3100, and the second mask layer 1620 and the third mask layer 1630 may be sequentially formed on the first mask layer 1610.

[0207] A portion of the sub-semiconductor layer 3100 that grows through the first mask layer 1610 and the second mask layer 1620 may be a third portion NR3 of the first semiconductor layer 310. The third portion NR3 may have a shape substantially the same as the shape of the etching holes formed in the first mask layer 1610 and the second mask layer 1620. As will be described below, in the first semiconductor layer 310, the third portion NR3 may have a small width similar to the etching holes formed in the first mask layer 1610 and the second mask layer 1620, and the first portion NR1 and the second portion NR2 may be formed by further growing semiconductor crystals in a subsequent process. Therefore, in the first semiconductor layer 310, the third portion NR3 may have a width smaller than the width of the first portion NR1 and have a shape extending in one direction.

[0208] In addition, in some embodiments, the first mask layer 1610 and the second mask layer 1620 may be formed to have a predetermined thickness such that the third portion NR3 of the first semiconductor layer 310 has a specific length. The first mask layer 1610 may be thicker than the second mask layer 1620, and its thickness may be greater than or equal to 300 nm. However, the present invention is not limited thereto.

[0209] The portions of the sub-semiconductor layer 3100 that grow through the etching holes of the third mask layer 1630 may be the first portion NR1 and the second portion NR2 of the first semiconductor layer 310. However, the first portion NR1 and the second portion NR2 of the first semiconductor layer 310 may be formed by further depositing the material for forming the first semiconductor layer 310 in a subsequent process, and the first portion NR1 and the second portion NR2 of the first semiconductor layer 310 may have shapes different from those of the etching holes formed in the third mask layer 1630. Therefore, the diameter of the third portion NR3 of the first semiconductor layer 310 may be different from the diameter of each of the first portion NR1 and the second portion NR2.

[0210] There is no particular limitation on the material for forming each of the first mask layer 1610, the second mask layer 1620, and the third mask layer 1630. In some embodiments, each of the first mask layer 1610, the second mask layer 1620, and the third mask layer 1630 may include silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiO x N y ).

[0211] The etching holes pass through the third mask layer 1630, the second mask layer 1620, and the first mask layer 1610 to expose at least a partial region of the sub-semiconductor layer 3100. The first semiconductor layer 310 may be formed by growing crystals from the sub-semiconductor layer 3100 through the etching holes.

[0212] A plurality of etching holes spaced apart from each other may be formed in the mask layer 1600. There is no particular limitation on the separation distance between the etching holes and the diameter of each of the etching holes. The diameter of the portion of the sub-semiconductor layer 3100 exposed by the etching holes may be smaller than the separation distance between the etching holes. In some embodiments, the ratio of the diameter of the portion of the sub-semiconductor layer 3100 exposed by the etching holes to the separation distance between the etching holes may be 1:2.5 to 1:3.

[0213] Meanwhile, in the embodiment, the inner sidewall of the mask layer 1600 exposed by the etching hole may be formed to be inclined from the upper surface of the sub-semiconductor layer 3100. That is, the diameter of the etching hole may decrease from the third mask layer 1630 toward the first mask layer 1610. Accordingly, the first semiconductor layer 310 formed along the etching hole may be formed such that its outer surface is inclined. Further, in the first semiconductor layer 310, the diameter of the third portion NR3 may be formed to be smaller than the diameter of each of the first portion NR1 and the second portion NR2.

[0214] The process of forming the etching hole is not particularly limited and may be performed by typical processes. For example, the process of forming the etching hole may be performed by a dry etching method, a wet etching method, a reactive ion etching (RIE) method, an inductively coupled plasma reactive ion etching (ICP-RIE) method, or the like.

[0215] Next, with reference to Figure 8 and Figure 9 a first semiconductor layer 310 is formed that grows from the sub-semiconductor layer 3100 along the etching hole. The process of forming the first semiconductor layer 310 includes growing the semiconductor crystal of the sub-semiconductor layer 3100 to form a first sub-semiconductor layer 310', removing the third mask layer 1630, and depositing a semiconductor material on the first sub-semiconductor layer 310' to form the first semiconductor layer 310. The process of removing the third mask layer 1630 may be a process that can generally be performed. As an example, the process may be performed by a reactive ion etching (RIE) method, an inductively coupled plasma reactive ion etching (ICP-RIE) method, or the like, but the present invention is not limited thereto. A detailed description thereof will be omitted.

[0216] First, as shown in Figure 8 the semiconductor crystal of the sub-semiconductor layer 3100 grows along the etching hole of the mask layer 1600 to form a first sub-semiconductor layer 310'. The side surface of the first sub-semiconductor layer 310' may have an inclined shape based on the shape of the etching hole. That is, the width of the first sub-semiconductor layer 310' may increase from the lower end of the first sub-semiconductor layer 310' where the first mask layer 1610 is located to the upper end of the first sub-semiconductor layer 310' where the third mask layer 1630 is located. However, the end portion of the semiconductor crystal in the direction along which the semiconductor crystal grows (i.e., the region of the second portion NR2 that forms the first semiconductor layer 310) may decrease in width to have a conical shape.

[0217] Next, as shown in Figure 9As shown, the third mask layer 1630 is removed, and the first semiconductor layer 310 is formed by further depositing the material for the first semiconductor layer 310. The material for forming the first semiconductor layer 310 may be deposited only in the regions exposed by removing the third mask layer 1630, and may not be deposited in the regions surrounded by the first mask layer 1610 and the second mask layer 1620. Accordingly, the first semiconductor layer 310 may include a third portion NR3 having a relatively small width and first and second portions NR1 and NR2 each having a large width.

[0218] Next, referring to Figure 10 , an active layer 330, a second semiconductor layer 320, and an electrode layer 370 are formed on the exposed first and second portions NR1 and NR2 of the first semiconductor layer 310. The active layer 330 may be formed to surround the first portion NR1 of the first semiconductor layer 310, and the second semiconductor layer 320 may be formed to surround the entire exposed outer surface of the first semiconductor layer 310 and the active layer 330. The electrode layer 370 may be formed to surround the outer surface of the second semiconductor layer 320. Since the third portion NR3 of the first semiconductor layer 310 is not exposed because it is surrounded by the first mask layer 1610 and the second mask layer 1620, the active layer 330 and the second semiconductor layer 320 may not be formed in the third portion NR3. Its shape may be the same as the above-described shape.

[0219] Next, referring to Figure 11 , the first mask layer 1610 and the second mask layer 1620 are removed to expose the third portion NR3 of the first semiconductor layer 310. The process of removing the first mask layer 1610 and the second mask layer 1620 may be performed by a typical process as described above. The semiconductor cores SC may be formed on the lower substrate 2000 by the above process. The semiconductor cores SC may be spaced apart from each other based on the positions of the etching holes formed in the mask layer 1600.

[0220] As described above, since the first semiconductor layer 310 includes the first portion NR1, the third portion NR3, and the second portion NR2 having different widths from each other, the side surfaces of the semiconductor cores SC may be inclined or stepped. An insulating film 380 may be formed on the outer surface of the semiconductor cores SC to compensate for the step difference of the side surfaces of the semiconductor cores SC.

[0221] Next, referring to Figure 12 and Figure 13 , an insulating film 380 is formed to surround a part of the outer surface of the semiconductor cores SC. The process of forming the insulating film 380 may include forming an insulating material 380' on the sub-semiconductor layer 3100, which is formed to cover a plurality of semiconductor cores SC, and partially etching the insulating material 380' to form the insulating film 380.

[0222] First, as shown in Figure 12 , an insulating material 380' is formed on the sub-semiconductor layer 3100 to cover a plurality of semiconductor cores SC, and a fourth mask layer 1700 is formed on the insulating material 380'. The insulating material 380' can be made of a material included in the insulating film 380. As an example, the insulating material 380' can be polyimide or the like as an organic insulating material. The insulating material 380' can be coated on the sub-semiconductor layer 3100 to cover the semiconductor core SC. The height of the insulating material 380' can be substantially the same as the height of the semiconductor core SC, and the insulating film 380 formed in a subsequent process can be formed to surround only the side surfaces of the first end 300B and the second end 300C of the semiconductor core SC.

[0223] The fourth mask layer 1700 can be disposed on the insulating material 380' at intervals corresponding to the positions of the semiconductor cores SC. The fourth mask layer 1700 can be disposed to etch the insulating material 380'. As an example, the fourth mask layer 1700 can be a hard mask layer made of a material such as metal.

[0224] In one embodiment, the width WM of the fourth mask layer 1700 can be the same as the diameter WB of the main body 300A of the semiconductor core SC. The light-emitting element 300 is formed such that the insulating film 380 does not surround the main body 300A of the semiconductor core SC. This can be formed when the insulating material 380' surrounding the side surface of the main body 300A is removed because the width WM of the fourth mask layer 1700 is formed to be the same as the width of the main body 300A. However, the present invention is not limited thereto. In some embodiments, the width WM of the fourth mask layer 1700 can be greater than the diameter WN of the main body 300A. In this case, the width WM of the fourth mask layer 1700 can be the same as the diameter WA of the light-emitting element 300 (see Figure 5 ).

[0225] Next, the insulating material 380' is etched along the fourth mask layer 1700, thereby forming an insulating film 380 that surrounds a part of the outer surface of the semiconductor core SC. As shown in Figure 13 , the insulating film 380 is formed to surround the inclined or stepped both ends of the semiconductor core SC, and the insulating film 380 may not be formed on the outer surface of the main body 300A.

[0226] Finally, referring to Figure 14, the semiconductor core SC having an insulating film 380 formed thereon can be separated from the sub-semiconductor layer 3100, thereby manufacturing the light-emitting element 300. As an example, the process of separating the semiconductor core SC can be performed by a physical separation method. Here, since the second insulating film 380B is provided to surround the second end 300C which is the portion where the semiconductor core SC is connected to the sub-semiconductor layer 3100, it is possible to prevent the second end 300C or the first semiconductor layer 310 from being damaged when the semiconductor core SC is separated.

[0227] The light-emitting element 300 according to one embodiment can be manufactured by the above process. The display device 10 may include the light-emitting element 300 disposed between the first electrode 210 and the second electrode 220. Hereinafter, the manufacturing process of the display device 10 according to one embodiment will be described with reference to other drawings.

[0228] Figures 15 to 21 is a cross-sectional view showing a part of the manufacturing process of a display device according to one embodiment.

[0229] First, referring to Figure 15 , the first electrode 210 and the second electrode 220 are prepared, and the light-emitting element 300 is disposed between the first electrode 210 and the second electrode 220. The first electrode 210 and the second electrode 220 can be disposed on the first substrate 101. However, as shown in the drawings, a plurality of conductive layers and insulating layers can be disposed between the first substrate 101 and the first electrode 210 and the second electrode 220. Since its description is the same as that above, its detailed description will be omitted.

[0230] Meanwhile, a first insulating material layer 510' covering the first electrode 210 and the second electrode 220 is disposed on the first electrode 210 and the second electrode 220, and an outer bank 450 is disposed on the first insulating material layer 510'. The first insulating material layer 510' can expose a part of the upper surface of each of the electrodes 210 and 220 in a subsequent process, and can form Figure 3 the first insulating layer 510.

[0231] The light-emitting element 300 may be disposed between the first electrode 210 and the second electrode 220 on the first insulating material layer 510'. In an embodiment, the light-emitting element 300 is prepared in a state of being dispersed in ink, and the light-emitting element 300 may be ejected onto the first substrate 101 through a printing process using an inkjet printing device (not shown). The light-emitting element 300 dispersed in the ink and ejected onto the electrodes 210 and 220 may be placed between the electrodes 210 and 220 by an alignment signal applied to each of the electrodes 210 and 220. For example, when an alignment signal is applied to the first electrode 210 and the second electrode 220, an electric field may be generated in the ink ejected above the electrodes 210 and 220. As an example, the alignment signal may be an alternating current (AC) voltage, and the AC voltage may have a voltage of + / −10 V to 50 V and a frequency of 10 kHz to 1 MHz.

[0232] When an electric field is generated on the first electrode 210 and the second electrode 220, the light-emitting element 300 dispersed in the ink may be subject to dielectrophoretic force due to the electric field. The light-emitting element 300 subject to the dielectrophoretic force may be placed between the first electrode 210 and the second electrode 220 while changing the orientation direction and position through the dielectrophoretic force.

[0233] Next, referring to Figure 16 , a second insulating material layer 520' is formed on the first insulating material layer 510' and the light-emitting element 300. The second insulating material layer 520' may fix the position of each of the light-emitting elements 300 disposed between the electrodes 210 and 220. The second insulating material layer 520' may be patterned in a subsequent process to form the second insulating layer 520.

[0234] Next, referring to Figure 17 , the first insulating material layer 510' and the second insulating material layer 520' are partially patterned (the "first etching" in Figure 17 ) to expose a part of the upper surface of the first electrode 210 and one end of the light-emitting element 300. A part of the first electrode 210 disposed on the first inner embankment 410 may be partially exposed, and as one end of the light-emitting element 300 facing the first electrode 210, the first end 300B of the semiconductor core SC may be exposed. Here, in the light-emitting element 300, the first insulating film 380A may be partially removed to form a first residue 380A1 and a second residue 380A2.

[0235] Next, referring to Figure 18, a first contact electrode 261 is formed to contact the exposed first electrode 210 and the exposed end of the light-emitting element 300. The first contact electrode 261 may be disposed to contact a first insulating material layer 510', the exposed first electrode 210, one end of the light-emitting element 300, and a part of the second insulating material layer 520'. The description of the arrangement of the first contact electrode 261 is the same as described above.

[0236] Next, referring to Figure 19 , a third insulating material layer 530' is formed on the first contact electrode 261 and the second insulating material layer 520'. The third insulating material layer 530' may be patterned in a subsequent process to form a third insulating layer 530. The third insulating material layer 530' may protect the first contact electrode 261 and at the same time insulate the first contact electrode 261 from the second contact electrode 262.

[0237] Next, referring to Figure 20 , the first insulating material layer 510', the second insulating material layer 520', and the third insulating material layer 530' are partially patterned ( Figure 20 "second etching" in

[0238] ), to expose a part of the upper surface of the second electrode 220 and the other end of the light-emitting element 300. A part of the second electrode 220 disposed on the second inner bank 420 may be partially exposed, and as the other end of the light-emitting element 300 facing the second electrode 220, the second end 300C of the semiconductor core SC may be exposed. Here, in the light-emitting element 300, a second insulating film 380B may be partially removed to form a third residue 380B1 and a fourth residue 380B2. In addition, the first insulating material layer 510', the second insulating material layer 520', and the third insulating material layer 530' may form a first insulating layer 510, a second insulating layer 520, and a third insulating layer 530, respectively. Figure 21

[0239] Next, referring to , a second contact electrode 262 is formed to contact the exposed second electrode 220 and the exposed other end of the light-emitting element 300. The second contact electrode 262 may be disposed to contact the first insulating layer 510, the exposed second electrode 220, the other end of the light-emitting element 300, the second insulating layer 520, and a part of the third insulating layer 530. The description of the arrangement of the second contact electrode 262 is the same as described above.

[0240] Hereinafter, various embodiments of the light-emitting element 300 and the display device 10 according to an embodiment will be described.

[0241] Figure 22 is a cross-sectional view showing a part of a display device according to another embodiment.

[0242] Referring to Figure 22 , in the display device 10_1 according to an embodiment, the third insulating layer 530 may be omitted. Figure 22 The display device 10_1 and Figure 3 The difference between the display device of the embodiment and

[0243] In the display device 10_1 according to an embodiment, the third insulating layer 530 is omitted, and a part of the second contact electrode 262_1 may be directly disposed on the second insulating layer 520_1. The first contact electrode 261_1 and the second contact electrode 262_1 may be disposed to be spaced apart from each other on the second insulating layer 520_1. For example, the side surfaces of the first contact electrode 261_1 and the second contact electrode 262_1 that are spaced apart from each other and face each other may be disposed on the second insulating layer 520_1. The first contact electrode 261_1 may be in contact with one end of the light-emitting element 300, the first electrode 210, and the second insulating layer 520_1, and the second contact electrode 262_1 may be in contact with the other end of the light-emitting element 300, the second electrode 220, and the second insulating layer 520_1.

[0244] According to an embodiment, the second insulating layer 520_1 may include an organic insulating material, and the first contact electrode 261_1 and the second contact electrode 262_1 may be formed together in the same process.

[0245] Figure 23 is a cross-sectional view showing Figure 22 a part of the manufacturing process of the display device.

[0246] Referring to Figure 23 , during the manufacturing process of the display device 10_1, a process of forming a second insulating material layer 520' configured to fix the light-emitting element 300 and then partially patterning the first insulating material layer 510' and the second insulating material layer 520' may be performed. Here, the first insulating material layer 510' and the second insulating material layer 520' may be patterned such that a part of the upper surface of each of the first electrode 210 and the second electrode 220 is simultaneously exposed ( Figure 23("first etching" in ), subsequently, the first contact electrode 261_1 and the second contact electrode 262_1 may be formed in the same process. At this time, a part of each of the first insulating film 380A and the second insulating film 380B of the light-emitting element 300 may be removed simultaneously. Other descriptions may be the same as the above descriptions, and thus, their detailed descriptions will be omitted.

[0247] Meanwhile, when the second insulating layer 520_1 includes an organic insulating material, in the process of exposing both ends of the light-emitting element 300, the second insulating material layer 520' located between both ends of the light-emitting element 300 and the first electrode 210 and the second electrode 220 may not be removed. The display device according to an embodiment may further include a portion of the second insulating layer 520_1 disposed between both ends of the light-emitting element 300 and the electrodes 210 and 220.

[0248] Figure 24 is a cross-sectional view showing a part of a display device according to still another embodiment. Figure 25 is Figure 24 an enlarged view of part Q2 of

[0249] Referring to Figure 24 and Figure 25 , in the display device 10_2 according to an embodiment, the second insulating layer 520_2 may further include a portion disposed between both ends of the light-emitting element 300 and the first electrode 210 and the second electrode 220 to partially contact both ends of the light-emitting element 300. Figure 24 The display device 10_2 of Figure 22 is different from the display device of the embodiment of

[0250] in that the shape of the second insulating layer 520_2 is different. Hereinafter, repeated descriptions will be omitted, and descriptions will be provided based on the differences from the above.

[0251] The first insulating pattern 520A_2 may have the same as Figure 22The shape of the second insulating layer 520_1 is substantially the same. The first insulating pattern 520A_2 may be disposed to surround a part of the outer surface of the light-emitting element 300 and may have a pattern shape extending in the second direction DR2 in each sub-pixel PXn. A description thereof will be omitted.

[0252] The second insulating pattern 520B_2 and the third insulating pattern 520C_2 include the same material as that of the first insulating pattern 520A_2 and may be disposed between the light-emitting element 300 and the electrodes 210 and 220. Similar to the first insulating pattern 520A_2, the second insulating pattern 520B_2 and the third insulating pattern 520C_2 may each have a pattern shape extending in the second direction DR2 in each sub-pixel PXn.

[0253] As Figure 23 shown, after the light-emitting element 300 is disposed, the second insulating material layer 520' configured to fix the light-emitting element 300 may be patterned such that both ends of the light-emitting element 300 are completely exposed. However, the present invention is not limited thereto, and when the second insulating material layer 520' is patterned to expose only a part of both ends of the light-emitting element 300, the portion disposed between both ends of the light-emitting element 300 and the electrodes 210 and 220 may be left without being removed.

[0254] For example, in one end of the light-emitting element 300 facing the first electrode 210, the first end 300B of the semiconductor core SC may be exposed. A part of the first insulating film 380A of the light-emitting element 300 may be partially removed to form a first residue 380A1 and a second residue 380A2. However, a part of the second insulating material layer 520' disposed between one end of the light-emitting element 300 and the first electrode 210 may not be removed and may be left as the second insulating pattern 520B_2, and the upper surface or the cross-sectional side surface of the first residue 380A1 may not be exposed. Thus, in the light-emitting element 300 according to one embodiment, the first residue 380A1 may be in direct contact with the second insulating pattern 520B_2 of the second insulating layer 520_2 to form a third contact surface CSC_2. The third contact surface CSC_2 may be a second surface CS2 formed by the first residue 380A1 (see Figure 6 ).

[0255] Similarly, in the other end of the light-emitting element 300 facing the second electrode 220, the second end 300C of the semiconductor core SC may be exposed. A part of the second insulating film 380B of the light-emitting element 300 may be partially removed to form a third residue 380B1 and a fourth residue 380B2. However, a part of the second insulating material layer 520' disposed between the other end of the light-emitting element 300 and the second electrode 220 may not be removed and may be left as a third insulating pattern 520C_2, and the lower surface of the first semiconductor layer 310 which is the lower surface of the second end 300C and the lower surface or the cross-sectional side surface of the third residue 380B1 may not be exposed. Therefore, in the light-emitting element 300 according to an embodiment, the second end 300C and the third residue 380B1 may be in direct contact with the third insulating pattern 520C_2 of the second insulating layer 520_2 to form a fourth contact surface CSD_2. The fourth contact surface CSD_2 may include a fifth surface CS5_2 formed by the second end 300C of the semiconductor core SC and a sixth surface CS6_2 formed by the third residue 380B1 of the second insulating film 380B.

[0256] The first contact surface CSA_2 formed by bringing one end of the light-emitting element 300 into contact with the first contact electrode 261_2 may not include a second surface CS2 formed by the first contact electrode 261_2 and the first residue 380A1. In addition, the second contact surface CSB_2 formed by bringing the other end of the light-emitting element 300 into contact with the second contact electrode 262_2 may not include a fifth surface CS5_2 and a sixth surface CS6_2 formed by the second contact electrode 262_2 and the lower surface of the second end 300C and the third residue 380B1.

[0257] Meanwhile, the first contact electrode 261_2 and the second contact electrode 262_2 may not be in contact with the first residue 380A1 and the third residue 380B1, but may be in contact with the second insulating pattern 520B_2 and the third insulating pattern 520C_2 respectively. According to an embodiment, the first contact electrode 261_2 may be in contact with the second insulating pattern 520B_2 to form a fifth contact surface CSE_2, and the second contact electrode 262_2 may be in contact with the third insulating pattern 520C_2 to form a sixth contact surface CSF_2. The fifth contact surface CSE_2 and the sixth contact surface CSF_2 may form a surface parallel to the upper surface of the first substrate 101.

[0258] The second insulating pattern 520B_2 and the third insulating pattern 520C_2 can compensate for the step difference between the light-emitting element 300 and the first insulating layer 510. Since the second insulating pattern 520B_2 and the third insulating pattern 520C_2 are respectively disposed between both ends of the light-emitting element 300 and the electrodes 210 and 220, the height between the upper surface of the first insulating pattern 520A_2 and the upper surface of each of the second insulating pattern 520B_2 and the third insulating pattern 520C_2 can be reduced. This can reduce the step difference between the portions covered by the first contact electrode 261_2 and the second contact electrode 262_2, and more effectively prevent disconnection of the materials forming the contact electrodes 261_2 and 262_2.

[0259] Figure 26 is a schematic cross-sectional view of a light-emitting element according to another embodiment.

[0260] Referring to Figure 26 , in a light-emitting element 300_3 according to an embodiment, the insulating film 380_3 may further include a portion surrounding the outer surface of the body 300A of the semiconductor core SC. In the light-emitting element 300_3, the insulating film 380_3 may be formed to have a greater thickness or diameter so as to surround the outer surface of the body 300A of the semiconductor core SC. Figure 26 The light-emitting element 300_3 of Figure 5 differs from the light-emitting element 300 of the embodiment of

[0261] in that the shape of the insulating film 380_3 is different. Hereinafter, repeated descriptions will be omitted, and descriptions will be provided based on the differences from the above.

[0262] The first insulating film 380A_3 and the second insulating film 380B_3 may both have the same as Figure 5a shape similar to that of the light-emitting element 300. The first insulating film 380A_3 may surround the first end 300B of the semiconductor core SC, and the second insulating film 380B_3 may surround the second end 300C of the semiconductor core SC. However, the outer surface of the cross-section of each of the first insulating film 380A_3, the second insulating film 380B_3, and the third insulating film 380C_3 may be collinear, such that the light-emitting element 300_3 has a constant diameter and has a flat cross-sectional surface formed thereon. That is, the maximum thickness IW1 of the first insulating film 380A_3 and the maximum thickness IW2 of the second insulating film 380B_3 may be larger than Figure 5 the maximum thickness IW1 of the first insulating film 380A and the maximum thickness IW2 of the second insulating film 380B in the embodiment of

[0263] The third insulating film 380C_3 may have a constant thickness IW3 and surround the outer surface of the main body 300A. Different from the first insulating film 380A_3 and the second insulating film 380B_3, the outer surface of the main body 300A is not inclined, such that the third insulating film 380C_3 may have a constant thickness. During the manufacturing process of the light-emitting element 300_3, the light-emitting element 300_3 may be manufactured by adjusting the width of the fourth mask layer 1700 and the separation distance between the semiconductor core SC formed on the sub-semiconductor layer 3100.

[0264] Figure 27 is a cross-sectional view showing a part of the manufacturing process of the Figure 26 light-emitting element.

[0265] Referring to Figure 27 , according to an embodiment, during the manufacturing process of the light-emitting element 300_3, in the process of etching the insulating material 380' covering the semiconductor core SC, the width WM_3 of the fourth mask layer 1700_3 may be larger than the width WB_3 of the main body 300A of the semiconductor core SC. Therefore, a part of the insulating material 380' may remain on the outer surface of the main body 300A of the semiconductor core SC to form the third insulating film 380C_3. In the case of this embodiment, the separation distance between the semiconductor cores SC may be larger than Figure 12 the separation distance in the embodiment of

[0266] Figure 28 is a cross-sectional view showing a part of a display device including Figure 26 the light-emitting element.

[0267] Referring to Figure 28 , a display device 10_3 according to an embodiment may include Figure 26 the light-emitting element 300_3, and the second insulating layer 520_3 may be in direct contact with the third insulating film 380C_3 of the light-emitting element 300_3. InFigure 26 In the light-emitting element 300_3, since the main body 300A is not exposed, the second insulating layer 520_3 provided on the light-emitting element 300_3 can be in direct contact with the third insulating film 380C_3. Other descriptions can be the same as above.

[0268] Meanwhile, the insulating film 380_3 of the light-emitting element 300_3 can be used to protect the semiconductor core SC. However, as described above, the insulating film 380_3 can include an organic insulating material and can also include inorganic insulating particles to improve the durability of the insulating film 380_3.

[0269] Figure 29 is a schematic cross-sectional view of a light-emitting element according to another embodiment.

[0270] Referring to Figure 29 , in a light-emitting element 300_4 according to an embodiment, the insulating film 380_4 can also include inorganic particles 385_4. The inorganic particles 385_4 can be an inorganic insulating material. For example, the inorganic particles 385_4 can be silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (Al x N y ), or aluminum oxide (Al x O y ), etc.

[0271] As described above, in some cases, the insulating film 380_4 can include an organic insulating material. In this case, the thickness and shape of the insulating film 380_4 can be freely changed, which can be advantageous for the light-emitting element 300_4 having a constant diameter, but the insulating film 380_4 can have lower durability than when including an inorganic insulating material. In a light-emitting element 300_4 according to an embodiment, the insulating film 380_4 including an organic insulating material can also include inorganic particles 385_4 dispersed in the organic insulating material. The inorganic particles 385_4 can include a transparent material such that light emitted from the active layer 330 can be smoothly emitted. Additionally, in some cases, the inorganic particles 385_4 can be a scatterer that scatters incident light.

[0272] Although not shown in the drawings, in the manufacturing process of the light-emitting element 300_4, the inorganic particles 385_4 can be included in the insulating material 380' covering the semiconductor core SC. Other descriptions can be the same as the above description, and therefore, its detailed description will be omitted.

[0273] Meanwhile, as in Figure 24 and Figure 25In an embodiment, when the display device 10_2 further includes a second insulating pattern 520B_2 and a third insulating pattern 520C_2, in the light-emitting element 300, the insulating film 380 may not need to be formed to compensate for the inclined or stepped side surfaces of the semiconductor core SC. In this case, the insulating film 380 of the light-emitting element 300 may include inorganic insulating particles and have a form of a single layer formed along the outer surface of the semiconductor core SC.

[0274] Figure 30 is a schematic cross-sectional view of a light-emitting element according to another embodiment.

[0275] Referring to Figure 30 , a light-emitting element 300_5 according to an embodiment may include an insulating film 380_5 made of inorganic insulating particles. In Figure 30 the light-emitting element 300_5, the insulating film 380_5 may be made of Figure 29 inorganic particles 385_4, and the insulating film 380_5 may be formed in an inclined structure or a stepped structure according to the shape of the outer surface of the semiconductor core SC. In the light-emitting element 300_5, the insulating film 380_5 may have a constant thickness and have inclined or stepped side surfaces like the semiconductor core SC. However, as in Figure 24 and Figure 25 in the embodiment, when the second insulating layer 520_2 is disposed between both ends of the light-emitting element 300 and the electrodes 210 and 220, disconnection of the materials of the contact electrodes 261 and 262 can be prevented. In this case, similar to Figure 30 the light-emitting element 300_5, the light-emitting element 300 may include an insulating film 380_5 having high durability by including inorganic insulating particles.

[0276] In Figure 30In the light-emitting element 300_5, during the manufacturing process of the light-emitting element 300_5, inorganic insulating particles may be included in a dispersed state in the insulating material 380' covering the semiconductor core SC. The inorganic insulating particles may be adsorbed on the outer surface of the semiconductor core SC. Thereafter, the insulating film, which is an organic insulating material in the insulating material 380', may be removed to form an insulating film 380_5 in which the inorganic insulating particles are formed as a single layer. The insulating film 380_5 is formed by dispersing the inorganic insulating particles in the insulating material 380' and adsorbing them, without using physical or chemical vapor deposition to form the insulating film 380_5 including the inorganic insulating particles. The insulating film 380_5 can also be smoothly formed on the second end 300C of the semiconductor core SC and the lower surface of the main body 300A. In the drawings, the insulating film 380_5 is shown as one inorganic insulating particle forming one layer, but the present invention is not limited thereto. The insulating film 380_5 may be formed of multiple layers of inorganic insulating particles. However, since the insulating film 380_5 includes the same type of inorganic insulating particles, the inorganic insulating particles can be substantially formed as a single layer. Other descriptions may be the same as the above descriptions, and thus, their detailed descriptions will be omitted.

[0277] Meanwhile, a display device according to an embodiment may include electrodes 210 and 220 having shapes different from those of Figure 2 and Figure 3 the electrodes.

[0278] Figure 31 FIG. is a plan view showing a pixel of a display device according to still another embodiment.

[0279] Referring to Figure 31 , in the display device 10_6 according to an embodiment, each of the first electrode 210_6 and the second electrode 220_6 may further include a portion extending in the first direction DR1. Figure 31 The display device 10_6 in Figure 2 is different from the display device 10 in

[0280] that the shapes of the first electrode 210_6 and the second electrode 220_6 are different. Hereinafter, repeated descriptions will be omitted, and descriptions will be provided based on the differences from the above. Figure 31 In the display device 10_6 in

[0281] Specifically, the first electrode 210_6 may include a first electrode main body portion 210S_6 disposed to extend in a first direction DR1 and one or more first electrode branch portions 210B_6 branched from the first electrode main body portion 210S_6 to extend in a second direction DR2.

[0282] Both ends of the first electrode main body portion 210S_6 of any one pixel may be spaced apart from each other and terminated between sub-pixels PXn, and the first electrode main body portions 210S_6 of adjacent sub-pixels PXn in the same row (e.g., adjacent to each other in the first direction DR1) are placed on substantially the same straight line. Since both ends of each of the first electrode main body portions 210S_6 provided in each sub-pixel PXn are spaced apart from each other, an electrical signal can be independently transmitted to each of the first electrode main body portions 210S_6.

[0283] The first electrode branch portion 210B_6 branches from at least a part of the first electrode main body portion 210S_6 and is disposed to extend in the second direction DR2. However, the first electrode branch portion 210B_6 may be terminated in a state spaced apart from a second electrode main body portion 220S_6 disposed to face the first electrode main body portion 210S_6.

[0284] The second electrode 220_6 may include a second electrode main body portion 220S_6 disposed to extend in the first direction DR1 and one or more second electrode branch portions 220B_6 branched from the second electrode main body portion 220S_6 to extend in the second direction DR2. The second electrode main body portion 220S_6 may be disposed to be spaced apart from and face the first electrode main body portion 210S_6, and the second electrode branch portion 220B_6 may be disposed to be spaced apart from and face one or more first electrode branch portions 210B_6.

[0285] Different from the first electrode main body portion 210S_6, the second electrode main body portion 220S_6 may be disposed to extend in the first direction DR1 to cross each of the sub-pixels PXn. The second electrode main body portion 220S_6 crossing each sub-pixel PXn may be connected to a peripheral portion of a display area DPA in which each of the pixels PX or sub-pixels PXn is provided, or connected to a portion extending in one direction from a non-display area NDA.

[0286] The second electrode branch portion 220B_6 can branch from the second electrode main portion 220S_6 in the second direction DR2 and terminate in a state spaced apart from the first electrode main portion 210S_6. Since the second electrode branch portion 220B_6 is arranged to be spaced apart from and face the first electrode branch portion 210B_6, a region in which the light-emitting element 300 is provided can be formed between the second electrode branch portion 220B_6 and the first electrode branch portion 210B_6.

[0287] In the drawings, two first electrode branch portions 210B_6 and one second electrode branch portion 220B_6 are shown provided in one sub-pixel PXn, and the first electrode 210_6 is arranged in a shape surrounding the outer surface of the second electrode branch portion 220B_6. However, the present invention is not limited thereto. In the display device 10_6, a greater or smaller number of electrode branch portions 210B_6 and 220B_6 can be provided in each sub-pixel PXn. In this case, the first electrode branch portions 210B_6 and the second electrode branch portions 220B_6 can be alternately arranged so that the first electrode branch portions 210B_6 and the second electrode branch portions 220B_6 are spaced apart from each other.

[0288] The light-emitting element 300 can be provided between the first electrode branch portion 210B_6 and the second electrode branch portion 220B_6, and the first contact electrode 261 and the second contact electrode 262 can be respectively provided on the first electrode branch portion 210B_6 and the second electrode branch portion 220B_6. Figure 31 The display device 10_6 includes a greater number of electrodes 210_6 and 220_6 or electrode branch portions 210B_6 and 220B_6 in one sub-pixel PXn, and a greater number of light-emitting elements 300 can be provided. In addition, the description of other components is the same as the components described above with reference to Figure 2 and Figure 3 Therefore, the detailed description thereof will be omitted.

[0289] Figure 32 is a plan view showing a pixel of a display device according to still another embodiment.

[0290] Referring to Figure 32 , in the display device 10_7 according to an embodiment, at least a partial region of each of the first electrode 210_7 and the second electrode 220_7 can include a bent region, and the bent region of the first electrode 210_7 can be spaced apart from and face the bent region of the second electrode 220_7. Figure 32 The display device 10_7 in Figure 2The display device 10 is different in that the shapes of the first electrode 210_7 and the second electrode 220_7 are different. In the following, repeated descriptions will be omitted, and descriptions will be provided based on the differences from the above.

[0291] Figure 32 The first electrode 210_7 of the display device 10_7 in [description] may include a plurality of holes HOL. As an example, as shown in the drawings, the first electrode 210_7 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3 arranged along the second direction DR2. However, the present invention is not limited thereto, and the first electrode 210_7 may include a greater or smaller number of holes HOL, or may include only one hole HOL. In the following, an example in which the first electrode 210_7 includes the first hole HOL1, the second hole HOL2, and the third hole HOL3 will be described.

[0292] In an embodiment, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a circular planar shape. Accordingly, the first electrode 210_7 may include a curved region formed by each hole HOL, and may face the second electrode 220_7 at the curved region. However, the above description is illustrative, and the present invention is not limited thereto. The shape of each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 is not limited as long as the shape can provide a space in which the second electrode 220_7 is provided as will be described below. For example, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a planar shape such as an elliptical shape, a quadrilateral shape, or a polygonal shape with more sides.

[0293] A plurality of second electrodes 220_7 may be provided in each sub-pixel PXn. For example, in each sub-pixel PXn, three second electrodes 220_7 corresponding to the first hole HOL1 to the third hole HOL3 of the first electrode 210_7 may be provided. The second electrode 220_7 may be located in each of the first hole HOL1 to the third hole HOL3, and may be surrounded by the first electrode 210_7.

[0294] In an embodiment, each of the holes HOL of the first electrode 210_7 may have an outer surface with a curved shape, the second electrode 220_7 provided corresponding to the hole HOL of the first electrode 210_7 may have an outer surface with a curved shape, and may be spaced apart from and face the first electrode 210_7. As Figure 32As shown, the first electrode 210_7 includes holes HOL each having a circular shape in a plan view, and the second electrode 220_7 may have a circular shape in the plan view. In the first electrode 210_7, the curved surface of the region where the holes HOL are formed may be spaced apart from and face the curved outer surface of the second electrode 220_7. As an example, the first electrode 210_7 may be arranged to surround the outer surface of the second electrode 220_7.

[0295] As described above, the light-emitting element 300 may be disposed between the first electrode 210_7 and the second electrode 220_7. The display device 10_7 according to the present embodiment may include a second electrode 220_7 having a circular shape and a first electrode 210_7 arranged to surround the second electrode 220_7, and a plurality of light-emitting elements 300 may be arranged along the curved outer surface of the second electrode 220_7. As described above, since each of the light-emitting elements 300 has a shape extending in one direction, the light-emitting elements 300 arranged along the curved outer surface of the second electrode 220_7 in each sub-pixel PXn may be arranged such that their extending directions point in different directions. Each of the sub-pixels PXn may have various emission directions according to the direction in which the extending direction of the light-emitting element 300 points. In the display device 10_7 according to the present embodiment, the first electrode 210_7 and the second electrode 220_7 are arranged to have a curved shape, so that the light-emitting elements 300 disposed between the first electrode 210_7 and the second electrode 220_7 may be arranged to point in different directions, thereby improving the lateral visibility of the display device 10_7.

[0296] At the end of the detailed description, those skilled in the art will understand that many changes and modifications can be made to the preferred embodiments without substantially departing from the principles of the invention. Therefore, the disclosed preferred embodiments of the invention are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A light-emitting element having a shape extending in one direction, the light-emitting element comprising: A semiconductor core including a main body, a first end, and a second end, the main body extending in the one direction, the first end connected to one side of the main body and having an inclined side surface, and the second end connected to the other side of the main body and having a width smaller than the width of the main body; And An insulating film surrounding at least a part of the outer surface of the semiconductor core, Wherein the insulating film includes a first insulating film surrounding the first end of the semiconductor core and a second insulating film surrounding the second end of the semiconductor core, The diameter of the outer surface of the first insulating film is the same as the diameter of the outer surface of the second insulating film, and The thickness of each of the first insulating film and the second insulating film increases as the distance from the main body increases.

2. The light-emitting element according to claim 1, wherein, The maximum thickness of the first insulating film is greater than the maximum thickness of the second insulating film.

3. The light-emitting element according to claim 2, wherein, In the semiconductor core, The outer surface of the main body is exposed, and The outer surface of the first insulating film, the outer surface of the second insulating film, and the outer surface of the main body are collinear in cross-section.

4. The light-emitting element according to claim 2, wherein, The insulating film further includes a third insulating film surrounding the outer surface of the main body of the semiconductor core, and The outer surface of the first insulating film, the outer surface of the second insulating film, and the outer surface of the third insulating film are collinear in cross-section.

5. The light-emitting element according to claim 4, wherein, The third insulating film has a constant thickness.

6. The light-emitting element according to claim 2, wherein, The insulating film further includes inorganic particles.

7. The light-emitting element according to claim 1, wherein, The semiconductor core includes a first semiconductor layer, an active layer surrounding at least a partial region of the first semiconductor layer, and a second semiconductor layer surrounding a partial region of the first semiconductor layer and the active layer.

8. The light-emitting element according to claim 7, wherein, The first semiconductor layer includes a first portion extending in the one direction, a second portion located on one side of the first portion, and a third portion located on the other side of the first portion and extending in the one direction, Wherein the second portion has a shape with an inclined outer surface.

9. The light-emitting element according to claim 8, wherein, The diameter of the third portion is smaller than the diameter of the first portion, and The outer surface of the third portion is recessed from the outer surface of the first portion toward the center of the first semiconductor layer.

10. The light-emitting element according to claim 8, wherein, The active layer is disposed to surround the outer surface of the first portion.

11. A display device, the display device comprising: A substrate; A first electrode disposed on the substrate; A second electrode disposed on the substrate and spaced apart from the first electrode; A first insulating layer disposed between the first electrode and the second electrode and configured to cover at least a part of each of the first electrode and the second electrode; And A light-emitting element disposed on the first insulating layer between the first electrode and the second electrode and having a shape extending in one direction, Among them, the light-emitting element includes: a semiconductor core including a main body extending in the one direction, a first end connected to one side of the main body and having an inclined side surface, and a second end connected to the other side of the main body and having a width smaller than the width of the main body; and an insulating film surrounding at least a part of the outer surface of the semiconductor core, Among them, the insulating film includes a first insulating film partially surrounding the first end of the semiconductor core and a second insulating film partially surrounding the second end of the semiconductor core, and the thickness of each of the first insulating film and the second insulating film increases as the distance from the main body increases.

12. The display device according to claim 11, wherein, the first insulating film is arranged such that at least a part of the first end is exposed, the second insulating film is arranged such that at least a part of the second end is exposed, and the display device further includes a first contact electrode in contact with the first electrode and the exposed first end and a second contact electrode in contact with the second electrode and the exposed second end.

13. The display device according to claim 12, wherein, the light-emitting element is arranged such that at least a part of the first end of the semiconductor core is placed on the first electrode and at least a part of the second end of the semiconductor core is placed on the second electrode, and at least a part of each of the first insulating film and the second insulating film is in direct contact with the first insulating layer.

14. The display device according to claim 13, wherein, The first insulating film includes a first residue located between the first end and the first insulating layer.

15. The display device according to claim 14, wherein, the light-emitting element includes a first surface and a second surface, in the first surface the first contact electrode is in contact with the first end, in the second surface the first contact electrode is in contact with the first residue, and the second surface is not parallel to the upper surface of the substrate.

16. The display device according to claim 12, the display device further includes a second insulating layer provided on the light-emitting element, Among them, the width of the second insulating layer is greater than the length of the main body of the semiconductor core.

17. The display device according to claim 16, wherein, The first insulating film further includes a second residue located between the second insulating layer and the first end.

18. The display device according to claim 17, wherein, The light-emitting element further includes a third surface, in the third surface the first contact electrode is in contact with the second residue, wherein, the third surface is perpendicular to the upper surface of the substrate.

19. The display device according to claim 16, wherein, The second insulating layer further includes an insulating pattern located between the first end of the semiconductor core and the first electrode.

20. The display device according to claim 19, wherein, The first contact electrode is in contact with the upper surface of the insulating pattern.

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