Light-sensitive device

Abstract

A photosensitive device includes a first photosensitive unit, a first collimation layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive element and a first control circuit. The first control circuit is electrically connected to the first photosensitive element. The first collimation layer is located above the first photosensitive element and has a first pinhole and a first dummy pinhole. The first lens is located above the first collimation layer and overlaps the first photosensitive element and the first pinhole in a first direction. The first dummy lens is located above the first collimation layer and overlaps the first dummy pinhole in the first direction.

Description

Technical Field

[0001] The present invention relates to a photosensitive device, and particularly to a photosensitive device including a lens. Background Art

[0002] The under-screen fingerprint sensing technology arranges a photosensitive device under the display panel of an electronic device. After the electronic device detects that the user touches the display screen, the electronic device controls a light source to emit light to illuminate the surface of the user's finger. The light is reflected by the user's finger and enters the photosensitive device under the display panel. The photosensitive element in the photosensitive device receives the light and generates a signal. In some photosensitive devices, a lens is provided to better converge the light on the photosensitive element. Summary of the Invention

[0003] The present invention provides a photosensitive device that can improve the problems of uneven lens shape and uneven pinhole shape.

[0004] At least one embodiment of the present invention provides a photosensitive device. The photosensitive device includes a first photosensitive unit, a first collimating layer, a first lens, and a first dummy lens. The first photosensitive unit includes a first photosensitive element and a first control circuit. The first control circuit is electrically connected to the first photosensitive element. The first collimating layer is located above the first photosensitive element and has a first pinhole array, and the first pinhole array includes a first pinhole and a first dummy pinhole. The first lens array is located above the first collimating layer and includes a first lens and a first dummy lens. The first lens overlaps the first photosensitive element and the first pinhole in a first direction. The first dummy lens overlaps the first dummy pinhole in the first direction.

[0005] Based on the above, by providing the first dummy lens and the first dummy pinhole, the problems of uneven lens shape and uneven pinhole shape can be improved. Brief Description of the Drawings

[0006] Figure 1A is a top view of a photosensitive device according to an embodiment of the present invention.

[0007] Figure 1B is Figure 1A a cross-sectional schematic diagram of the photosensitive device.

[0008] Figure 2A is a top view of a photosensitive device according to an embodiment of the present invention.

[0009] Figure 2B is Figure 2A a cross-sectional schematic diagram of the photosensitive device.

[0010] Figure 3A is a top view of a photosensitive device according to an embodiment of the present invention.

[0011] Figure 3B is Figure 3A a schematic cross-sectional view of a photosensitive device.

[0012] Figure 4A is a top view of a photosensitive device according to an embodiment of the present invention.

[0013] Figure 4B is Figure 4A a schematic cross-sectional view of a photosensitive device.

[0014] Figure 5 is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention.

[0015] Figure 6 is a schematic cross-sectional view of a photosensitive device according to an embodiment of the present invention.

[0016] Description of reference numerals:

[0017] 10, 20, 30, 40, 50, 60: Photosensitive device

[0018] 100: First substrate

[0019] 110: Insulating layer

[0020] 110H, O, O1, O2: Opening

[0021] 120: Planarization layer

[0022] 122: Buffer layer

[0023] 130: First planarization layer

[0024] 140: Second planarization layer

[0025] 150: Third planarization layer

[0026] 210: First collimation layer

[0027] 212: First oxide layer

[0028] 220: Second collimation layer

[0029] 222: Second oxide layer

[0030] 230: Light-shielding structure

[0031] 232: Third oxide layer

[0032] a-a’: Line

[0033] BE: First electrode

[0034] CC1: First control circuit

[0035] CC2: Second control circuit

[0036] CH: Channel layer

[0037] CH1: First doped region

[0038] CH2: Second doped region

[0039] CH3: Third doped region

[0040] D: Drain

[0041] DML1: First dummy lens

[0042] DML2: Second dummy lens

[0043] DR1: First direction

[0044] DR2: Second direction

[0045] DR3: Third direction

[0046] DPH1: First dummy pinhole

[0047] D1, D2: Aperture

[0048] D3: Width

[0049] G: Gate

[0050] GI: Gate insulating layer

[0051] H1, H2: Depth

[0052] H3, H4: Thickness

[0053] ILD: Interlayer dielectric layer

[0054] ML1: First lens

[0055] ML2: Second lens

[0056] ML1A: First lens array

[0057] PH1: First pinhole

[0058] PH2: Second pinhole

[0059] PH1A: First pinhole array

[0060] PS: Spacer

[0061] PSL Photosensitive layer

[0062] PX1, PX2, PX3, PX4: Pixel

[0063] R1, R2: Radius of curvature

[0064] S: Source electrode

[0065] S1: First side

[0066] S2: Second side

[0067] SE1: First photosensitive element

[0068] SE2: Second photosensitive element

[0069] SU1: First photosensitive unit

[0070] SU2: Second photosensitive unit

[0071] T: Active element

[0072] TE: Second electrode

[0073] TR1: First trench

[0074] TR2: Second trench

[0075] X1: First pitch

[0076] X2: Second pitch Detailed implementation manners

[0077] Figure 1A is a top view of a photosensitive device according to an embodiment of the present invention. Figure 1B is Figure 1A a schematic cross-sectional view of the photosensitive device. The photosensitive device 10 includes a plurality of pixels, and Figure 1A and Figure 1B only one pixel of the photosensitive device 10 is shown.

[0078] Please refer to Figure 1A and Figure 1B , the photosensitive device 10 includes a first photosensitive unit SU1, a first collimation layer 210, and a first lens array ML1A. In this embodiment, the photosensitive device 10 further includes a first substrate 100, a first planarization layer 130, a second collimation layer 220, a second planarization layer 140, and a light-shielding structure 230.

[0079] The first photosensitive unit SU1 is located on the first substrate 100 and includes a first photosensitive element SE1 and a first control circuit CC1. The first photosensitive element SE1 can include any form of photosensitive element. The first control circuit CC1 includes, for example, an active element or a combination of an active element and a passive element. The first control circuit CC1 is electrically connected to the first photosensitive element SE1. For example, the active element in the first control circuit CC1 is electrically connected to the electrode of the first photosensitive element SE1.

[0080] The first collimation layer 210 is located above the first photosensitive element SE1 and has a first pinhole array PH1A. In some embodiments, the material of the first collimation layer 210 includes black resin, black metal, or other light-shielding materials. The first pinhole array PH1A includes a first pinhole PH1 passing through the first collimation layer 210 and a first dummy pinhole DPH1. In this embodiment, the first pinhole array PH1A includes the first pinhole PH1 and the first dummy pinhole DPH1 arranged in an array in the second direction DR2 and the third direction DR3.

[0081] The first pinhole PH1 overlaps the first photosensitive element SE1 in the first direction DR1 perpendicular to the first substrate 100, while the first dummy pinhole DPH1 does not overlap the first photosensitive element SE1 in the first direction DR1. In some embodiments, the first dummy pinhole DPH1 overlaps the first control circuit CC1 in the first direction DR1. The first pinhole PH1 and the first dummy pinhole DPH1 have the same first pitch X1 in the second direction DR2, and the first pinhole PH1 and the first dummy pinhole DPH1 have the same second pitch X2 in the third direction DR3. The first pitch X1 and the second pitch X2 are in the range of 10 micrometers to 30 micrometers.

[0082] In some embodiments, the method of forming the first collimation layer 210 includes: forming a light-shielding material layer, then forming a patterned photoresist layer on the surface of the aforementioned light-shielding material layer, and then etching the aforementioned light-shielding material layer using the patterned photoresist layer as a mask to form the first collimation layer 210 having the first pinhole array PH1A.

[0083] In this embodiment, because the first dummy pinhole DPH1 is to be formed, it is not easy for the aforementioned patterned photoresist layer to have problems of irregular patterns. Specifically, if the first dummy pinhole DPH1 does not need to be formed, when forming the patterned photoresist layer used for etching the light-shielding material layer, the developer cannot be evenly distributed at the positions where the first pinhole PH1 needs to be set and the positions where the first pinhole PH1 does not need to be set, resulting in inconsistent opening shapes of the formed patterned photoresist layer. In this embodiment, because the first dummy pinhole DPH1 is to be formed, it is not easy for the patterned photoresist layer used for etching the light-shielding material layer to have problems of inconsistent opening shapes, so that the first pinhole array PH1A formed through the aforementioned patterned photoresist layer can have uniformly distributed pinhole shapes and pinhole apertures. In other words, by setting the first dummy pinhole DPH1, the problems of uneven shape distribution and uneven aperture distribution of the first pinhole PH1 can be improved.

[0084] In some embodiments, the aperture diameter D1 of the first pinhole PH1 and the first dummy pinhole DPH1 is in the range of 2 micrometers to 6 micrometers. In some embodiments, the depth H1 of the first pinhole PH1 and the first dummy pinhole DPH1 is in the range of 450 angstroms to 850 angstroms. In some embodiments, the first pinhole PH1 and the first dummy pinhole DPH1 have the same aperture diameter D1 and the same depth H1. In some embodiments, the variation of the aperture diameter D1 of the first pinhole PH1 is within plus or minus 0.2 micrometers.

[0085] In Figure 1A and Figure 1B of the photosensitive device 10, one pixel includes eight first pinholes PH1 and eight first dummy pinholes DPH1, but the present invention is not limited thereto. The number and arrangement of the first pinholes PH1 and the first dummy pinholes DPH1 can be adjusted according to actual requirements.

[0086] The first flat layer 130 is located on the first collimating layer 210. In this embodiment, the first flat layer 130 fills the first pinhole PH1 and the first dummy pinhole DPH1.

[0087] The second collimating layer 220 is located above the first collimating layer 210. In this embodiment, the second collimating layer 220 is located on the first flat layer 130, and the first flat layer 130 is located between the first collimating layer 210 and the second collimating layer 220. The second collimating layer 220 has a second pinhole PH2 that overlaps the first pinhole PH1 in the first direction DR1. The aperture diameter D2 of the second pinhole PH2 is larger than the aperture diameter D1 of the first pinhole PH1. In some embodiments, the aperture diameter D2 of the second pinhole PH2 is in the range of 3 micrometers to 15 micrometers. In some embodiments, the depth H2 of the second pinhole PH2 is in the range of 450 angstroms to 850 angstroms. In this embodiment, the second pinhole PH2 does not overlap the first dummy pinhole DPH1, and the second collimating layer 220 shields the first dummy pinhole DPH1.

[0088] In this embodiment, since the aperture diameter D2 of the second pinhole PH2 is larger than the aperture diameter D1 of the first pinhole PH1, the process margin of the second collimating layer 220 is larger than that of the first collimating layer 210.

[0089] The second flat layer 140 is located on the second collimating layer 220. In this embodiment, the second flat layer 140 fills the second pinhole PH2.

[0090] The light-shielding structure 230 is located on the second flat layer 140. The light-shielding structure 230 has a plurality of openings O that overlap the second pinhole PH2, the first pinhole PH1, and the first dummy pinhole DPH1 in the first direction DR1. In some embodiments, the width D3 of the opening O is larger than the aperture diameter D2 of the second pinhole PH2.

[0091] In some embodiments, the second collimation layer 220 and the light-shielding structure 230 include the same light-shielding material as the first collimation layer 210, but the present invention is not limited thereto. In other embodiments, the second collimation layer 220 and the light-shielding structure 230 include a light-shielding material different from that of the first collimation layer 210.

[0092] The first lens array ML1A is located above the first collimation layer 210. In this embodiment, the first lens array ML1A is located on the second flat layer 140 and is disposed in the opening O of the light-shielding structure 230. In this embodiment, the first lens array ML1A includes first lenses ML1 and first dummy lenses DML1 arranged in an array in the second direction DR2 and the third direction DR3, and the first lenses ML1 and the first dummy lenses DML1 are respectively disposed in the opening O.

[0093] The first lens ML1 overlaps the first photosensitive element SE1, the first pinhole PH1, and the second pinhole PH2 in the first direction DR1. The first dummy lens DML1 overlaps the first dummy pinhole DPH1 in the first direction DR1. The first dummy lens DML1 does not overlap the first photosensitive element SE1 in the first direction DR1, and the first dummy lens DML1 overlaps the first control circuit CC1 in the first direction DR1. The second collimation layer 220 is located between the first dummy pinhole DPH1 and the first dummy lens DML1 in the first direction DR1 and shields the first dummy pinhole DPH1, so that the light passing through the first dummy lens DML1 can be prevented from having a negative impact on the first control circuit CC1.

[0094] The first lens ML1 and the first dummy lens DML1 have the same first pitch X1 in the second direction DR2, and the first lens ML1 and the first dummy lens DML1 have the same second pitch X2 in the third direction DR3.

[0095] In some embodiments, the first lens array ML1A is formed by: forming a photoresist material layer, and then patterning the photoresist material layer to form the first lenses ML1 and the first dummy lenses DML1.

[0096] In this embodiment, since the first dummy lens DML1 is to be formed, it is not easy for the first lens array ML1A to have irregular patterns. Specifically, if the first dummy lens DML1 does not need to be formed, when forming the first lens array ML1A, the developer liquid cannot be evenly distributed at the positions where the first lens ML1 needs to be set and the positions where the first lens ML1 does not need to be set, resulting in inconsistent lens shapes of the formed first lenses ML1. For example, the surfaces of some of the first lenses ML1 are not round enough. In this embodiment, since the first dummy lens DML1 is to be formed, the first lens array ML1A can have uniformly distributed lens shapes and lens thicknesses. In other words, by setting the first dummy lens DML1, the problem of uneven distribution of the shapes and thicknesses of the first lenses ML1 can be improved. In some embodiments, the variation of the radius of curvature R1 of the first lens ML1 is within plus or minus 0.2 micrometers, the variation of the width of the first lens ML1 is within plus or minus 0.6 micrometers, and the variation of the thickness H3 of the first lens ML1 is within plus or minus 10% of the thickness H3.

[0097] In some embodiments, the radius of curvature R1 of the first lens ML1 and the first dummy lens DML1 is in the range of 7 micrometers to 25 micrometers. In some embodiments, the thickness H3 of the first lens ML1 and the first dummy lens DML1 is in the range of 2 micrometers to 6 micrometers. In some embodiments, the first lens ML1 and the first dummy lens DML1 have the same radius of curvature R1, the same thickness H3, and the same material.

[0098] Figure 2A is a top view of a photosensitive device according to an embodiment of the present invention. Figure 2B is Figure 2A a schematic cross-sectional view of the photosensitive device. It must be noted here that Figure 2A and Figure 2B the embodiments of Figure 1A and Figure 1B adopt the component labels and some contents of the embodiments of

[0099] Figure 2A and Figure 2B the photosensitive device 20 of Figure 1A and Figure 1B the main difference between the photosensitive device 10 of

[0100] Please refer to Figure 2A and Figure 2B, the first flat layer 130 is located between the first collimating layer 210 and the second collimating layer 220. The first flat layer 130 has a first trench TR1, and the second collimating layer 220 fills the first trench TR1 and contacts the first collimating layer 210. The first trench TR1 is adapted to divide the first flat layer 130 into different regions to prevent the stress generated during the formation of the first flat layer 130 from causing the photosensitive device 20 to bend.

[0101] In some embodiments, the first trench TR1 of the first flat layer 130 overlaps the first dummy pinhole DPH1, and the second collimating layer 220 fills the first dummy pinhole DPH1, but the present invention is not limited thereto. In other embodiments, the first trench TR1 of the first flat layer 130 does not overlap the first dummy pinhole DPH1. In some embodiments, the width of the first trench TR1 is in the range of 6 microns to 10 microns.

[0102] Figure 3A is a top view of a photosensitive device according to an embodiment of the present invention. Figure 3B is Figure 3A a schematic cross-sectional view of the photosensitive device. It should be noted here that Figure 3A and Figure 3B the embodiments of Figure 2A and Figure 2B adopt the component numbers and some contents of the embodiments of Figure 3A and Figure 3B wherein the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to the foregoing embodiments and will not be elaborated here. The photosensitive device 30 includes a plurality of pixels, and

[0103] Figure 3A and Figure 3B only show two of the pixels PX1, PX2 of the photosensitive device 30.

[0103] Figure 3A and Figure 3B The main difference between the photosensitive device 30 of Figure 2A and Figure 2B the photosensitive device 20 of

[0104] is that the second flat layer 140 of the photosensitive device 30 has a second trench TR2.

[0104] In this embodiment, the photosensitive device 30 includes a first photosensitive unit SU1 and a second photosensitive unit SU2. The first photosensitive unit SU1 and the second photosensitive unit SU2 are respectively located in the pixel PX1 and the pixel PX2. The first photosensitive unit SU1 and the second photosensitive unit SU2 are located on the first substrate 100. The first photosensitive unit SU1 includes a first photosensitive element SE1 and a first control circuit CC1 electrically connected to the first photosensitive element SE1. The second photosensitive unit SU2 includes a second photosensitive element SE2 and a second control circuit CC2 electrically connected to the second photosensitive element SE2.

[0105] In this embodiment, a part of the first lens ML1 overlaps the first photosensitive element SE1 and a part of the first pinhole PH1 in the first direction DR1, and another part of the first lens ML1 overlaps the second photosensitive element SE2 and another part of the first pinhole PH1 in the first direction DR1. The first dummy lens DML1 overlaps the corresponding first dummy pinhole DPH1 in the first direction DR1, and does not overlap the first photosensitive element SE1 and the second photosensitive element SE2.

[0106] The second flat layer 140 is located on the second collimation layer 220. The second flat layer 140 has a second trench TR2. The second trench TR2 is adapted to divide the second flat layer 140 into different regions to prevent the stress generated when forming the first flat layer 140 from causing the photosensitive device 30 to bend. In some embodiments, the light-shielding structure 230 is filled in the second trench TR2 and contacts the second collimation layer 220.

[0107] In this embodiment, the second trench TR2 of the second flat layer 140 and the first trench TR1 of the first flat layer 130 are respectively disposed in different pixels. In this embodiment, the second trench TR2 of the second flat layer 140 overlaps the second photosensitive unit SU2, and the first trench TR1 of the first flat layer 130 overlaps the first photosensitive unit SU1. In some embodiments, the width of the first trench TR1 and the width of the second trench TR2 are in the range of 6 micrometers to 10 micrometers.

[0108] In this embodiment, the photosensitive device 30 further includes a third flat layer 150. The third flat layer 150 is located on the light-shielding structure 230. The first lens ML1 and the first dummy lens DML1 are located on the third flat layer 150. The first lens ML1 overlaps the opening O of the light-shielding structure 230 in the first direction DR1, and the opening O does not overlap the first dummy pinhole DPH1 in the first direction DR1. In some embodiments, the first dummy lens DML1 does not overlap the opening O of the light-shielding structure 230 in the first direction DR1, but the present invention is not limited thereto. In other embodiments, the first dummy lens DML1 and the first lens ML1 respectively overlap the opening O of the light-shielding structure 230 in the first direction DR1.

[0109] Figure 4A is a top view of a photosensitive device according to an embodiment of the present invention. Figure 4B is Figure 4A a schematic cross-sectional view of the photosensitive device. It must be noted here that Figure 4A and Figure 4B the embodiments of Figure 3A and Figure 3BElement numbers and partial content of the embodiments, where the same or similar element numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to the foregoing embodiments and will not be elaborated here. The photosensitive device 40 includes a plurality of pixels, and Figure 4A shows four of the pixels PX1, PX2, PX3, and PX4 of the photosensitive device 40.

[0110] Figure 4A and Figure 4B the photosensitive device 40 of Figure 3A and Figure 3B the main difference between the photosensitive device 30 of

[0111] Please refer to Figure 4A and Figure 4B the photosensitive device 40 further includes a second substrate 300, a spacer PS, and a light-shielding structure 410.

[0112] The second substrate 300 is disposed relative to the first substrate 100. The filter elements 312, 314, and the light-shielding structure 410 are disposed on the second substrate 300. The filter elements 312 and 314 are respectively disposed in the pixels PX2 and PX1. In some embodiments, the filter elements 312 and 314 include filter elements of different colors. In Figure 4B the filter elements 312 and 314 are disposed in the pixels PX2 and PX1. However, it does not mean that each pixel of the photosensitive device 40 must be provided with a filter element. Specifically, the photosensitive device 40 may be provided with a filter element in each pixel, or may be provided with a filter element only in some pixels.

[0113] The light-shielding structure 410 is disposed on the filter elements 312 and 314 and has a plurality of openings O that overlap the second pinhole PH2, the first pinhole PH1, and the first dummy pinhole DPH1 in the first direction DR1.

[0114] In this embodiment, the first lens array ML1A is located on the filter elements 312 and 314 and is disposed in the opening O of the light-shielding structure 410. In this embodiment, the first lens array ML1A includes the first lens ML1 and the first dummy lens DML1 arranged in an array in the second direction DR2 and the third direction DR3, and the first lens ML1 and the first dummy lens DML1 are respectively disposed in the opening O. The filter elements 312 and 314 are located between the second substrate 300 and the first lens ML1 and between the second substrate 300 and the first dummy lens DML1.

[0115] In this embodiment, there is a gap GP between the first substrate 100 and the second substrate 300. The gap GP has a first side S1 close to the first substrate 100 and a second side S2 close to the second substrate 300. The first photosensitive element SE1 and the second photosensitive element SE2 are located between the first side S1 of the gap GP and the first substrate 100. The first lens ML1 and the first dummy lens DML1 are located on the second side S2 of the gap GP. In some embodiments, the gap GP includes air. In some embodiments, the air in the gap GP is in a low vacuum state.

[0116] The spacer PS is located between the first substrate 100 and the second substrate 300. The first dummy lens DML1 contacts the top surface of the spacer PS, and the first lens ML1 does not contact the top surface of the spacer PS.

[0117] Figure 5 It is a cross-sectional schematic diagram of a photosensitive device according to an embodiment of the present invention. It must be noted here that Figure 5 The embodiment of Figure 4A and Figure 4B adopts the component numbers and partial contents of the embodiments of Figure 5 , where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to the foregoing embodiments, which will not be elaborated here. The photosensitive device 50 includes a plurality of pixels, and

[0118] Figure 5 The photosensitive device 50 of Figure 4A and Figure 4B The main difference between the photosensitive device 40 of

[0119] Please refer to Figure 5 The second lens array ML2A is located above the first collimation layer 210. In this embodiment, the second lens array ML2A is disposed on the second collimation layer 220. In this embodiment, the second lens array ML2A includes second lenses ML2 and second dummy lenses DML2 arranged in an array in the second direction DR2 and the third direction DR3 (please refer to Figure 4A ). In some embodiments, the second lenses ML2 are filled into the second pinholes PH2 of the second collimation layer 220.

[0120] The first lens ML1 and the second lens ML2 overlap the first photosensitive element SE1, the second photosensitive element SE2, the first pinhole PH1, and the second pinhole PH2 in the first direction DR1. The second dummy lens DML2 overlaps the first dummy pinhole DPH1 and the first dummy lens DML1 in the first direction DR1. The first dummy lens DML1 and the second dummy lens DML2 do not overlap the first photosensitive element SE1 and the second photosensitive element SE2 in the first direction DR1, and the first dummy lens DML1 and the second dummy lens DML2 overlap the first control circuit CC1 and the second control circuit CC2 in the first direction DR1. The second collimation layer 220 is located between the first dummy pinhole DPH1 and the first dummy lens DML1 and between the first dummy pinhole DPH1 and the second dummy lens DML2 in the first direction DR1, and shields the first dummy pinhole DPH1, so that the light passing through the first dummy lens DML1 and the second dummy lens DML2 can be prevented from having an adverse impact on the first control circuit CC1 and the second control circuit CC2.

[0121] The first lens ML1 and the first dummy lens DML1 have the same first spacing X1 in the second direction DR2 (please refer to Figure 4A ), and the first lens ML1 and the first dummy lens DML1 have the same second spacing X2 in the third direction DR3 (please refer to Figure 4A ). Similarly, the second lens ML2 and the second dummy lens DML2 have the same first spacing X1 in the second direction DR2, and the second lens ML2 and the second dummy lens DML2 have the same second spacing X2 in the third direction DR3.

[0122] In some embodiments, the methods of forming the first lens array ML1A and the second lens array ML2A both include: forming a photoresist material layer, and then patterning the aforementioned photoresist material layer to form lenses and dummy lenses. In this embodiment, the first lens array ML1A and the second lens array ML2A are respectively formed above the second substrate 300 and above the first substrate 100. Then, the first substrate 100 and the second substrate 300 are combined together.

[0123] In this embodiment, the problems of uneven shape and thickness distribution of the first lens ML1 and the second lens ML2 can be improved by the settings of the first dummy lens DML1 and the second dummy lens DML2.

[0124] In some embodiments, the radius of curvature R1 of the first lens ML1 and the first dummy lens DML1, and the radius of curvature R2 of the second lens ML2 and the second dummy lens DML2 are in the range of 7 microns to 25 microns. In some embodiments, the thickness H3 of the first lens ML1 and the first dummy lens DML1, and the thickness H4 of the second lens ML2 and the second dummy lens DML2 are in the range of 2 microns to 6 microns. In some embodiments, the radius of curvature R1 and the radius of curvature R2 are the same or different, the thickness H3 and the thickness H4 are the same or different, and the material of the first lens ML1 and the first dummy lens DML1 is the same as or different from the material of the second lens ML2 and the second dummy lens DML2.

[0125] The first lens ML1 and the first dummy lens DML1 are located on the second side S2 of the gap GP close to the second substrate 300, while the second lens ML2 and the second dummy lens DML2 are located on the first side S1 of the gap GP close to the first substrate 100. The second lens ML2 overlaps the first lens ML1 in the first direction DR1, and the second dummy lens DML2 overlaps the first dummy lens DML1 in the first direction DR1. Through the overlapping arrangement of the first lens ML1 and the second lens ML2, light can be better focused on the first photosensitive element SE1 and the second photosensitive element SE2.

[0126] In this embodiment, the spacer PS is located between the first substrate 100 and the second substrate 300. The first dummy lens DML1 contacts the top surface of the spacer PS, and the spacer PS covers the second dummy lens DML2.

[0127] Figure 6 is a cross-sectional schematic diagram of a photosensitive device according to an embodiment of the present invention. It must be noted here that Figure 6 The embodiments of Figure 1A and Figure 1B adopt the component numbers and partial contents of the embodiments of

[0128] Please refer to Figure 6 In this embodiment, the photosensitive device 60 includes a first photosensitive unit SU1, a first collimation layer 210, and a first lens array ML1A. In this embodiment, the photosensitive device 10 further includes a first substrate 100, a first planarization layer 130, a second collimation layer 220, a second planarization layer 140, a light shielding structure 230, a third planarization layer 150, a first oxide layer 212, a second oxide layer 222, and a third oxide layer 232.

[0129] The first photosensitive unit SU1 is located above the first substrate 100 and includes a first photosensitive element SE1 and a first control circuit CC1. In this embodiment, the first control circuit CC1 includes an active element T. The active element T includes a gate G, a channel layer CH, a source S, and a drain D.

[0130] The channel layer CH is located above the first substrate 100 and includes a first doped region CH1, a second doped region CH2, and a third doped region CH3, where the first doped region CH1, the second doped region CH2, and the third doped region CH3 include different doping concentrations, for example. The second doped region CH2 is located between the first doped region CH1 and the third doped region CH3. The gate G overlaps the third doped region CH3, and a gate insulating layer GI is located between the gate G and the channel layer CH. An interlayer dielectric layer ILD is located on the gate G and the gate insulating layer GI. The source S and the drain D are located on the interlayer dielectric layer ILD, and the source S and the drain D are electrically connected to the first doped region CH1.

[0131] In some embodiments, the channel layer CH is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single-crystalline silicon, organic semiconductor materials, oxide semiconductor materials (such as indium zinc oxide, indium gallium zinc oxide, or other suitable materials, or a combination of the above materials) or other suitable materials or a combination of the above materials. In some embodiments, the materials of the gate G, the source S, and the drain D include metals such as chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminum, zinc, the above alloys, or other conductive materials. In this embodiment, the active element T is a top-gate thin-film transistor, but the present invention is not limited thereto. In other embodiments, the active element T is a bottom-gate thin-film transistor, a double-gate thin-film transistor, or other types of thin-film transistors.

[0132] The first photosensitive element SE1 includes a first electrode BE, a photosensitive layer PSL, and a second electrode TE. The first electrode BE is electrically connected to the drain D of the active element T. In this embodiment, the first electrode BE and the drain D belong to the same film layer, and the first electrode BE and the drain D are integrally formed, but the present invention is not limited thereto. In other embodiments, the first electrode BE and the drain D belong to different film layers.

[0133] The photosensitive layer PSL is located above the first electrode BE. For example, the photosensitive layer PSL is directly formed on the first electrode BE. In some embodiments, the photosensitive layer PSL includes a semiconductor stack layer, such as a stack layer including a P-type semiconductor, an intrinsic semiconductor, and an N-type semiconductor. In other embodiments, the material of the photosensitive layer PSL includes a silicon-rich silicon oxide layer, a silicon-rich silicon nitride layer, a silicon-rich silicon oxynitride layer, a silicon-rich silicon carbide layer, a silicon-rich silicon carbon oxide layer, a hydrogenated silicon-rich silicon oxide layer, a hydrogenated silicon-rich silicon nitride layer, a hydrogenated silicon-rich silicon carbide layer, hydrogenated amorphous silicon, hydrogenated microcrystalline silicon, hydrogenated polycrystalline silicon, or a combination thereof or other photosensitive materials.

[0134] The second electrode TE is located on the photosensitive layer PSL. For example, the second electrode TE is directly formed on the photosensitive layer PSL. In this embodiment, the insulating layer 110 is located on the interlayer dielectric layer ILD, the photosensitive layer PSL, and the first electrode BE, and the second electrode TE is connected to the photosensitive layer PSL through the opening 110H in the insulating layer 110. In this embodiment, the opening 110H overlaps the first pinhole PH1 in the first direction DR1. In some embodiments, the second electrode TE includes a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or a stack layer of at least two of the above or other conductive materials.

[0135] The planar layer 120 is located on the second electrode TE. The buffer layer 122 is located on the planar layer 120. The first collimating layer 210 is located on the buffer layer 122. The first oxide layer 212 is located on the surface of the first collimating layer 210. The first pinhole PH1 and the first dummy pinhole DPH1 penetrate through the first collimating layer 210 and the first oxide layer 212. The first planar layer 130 is located on the first oxide layer 212. The second collimating layer 220 is located on the first planar layer 130. The second oxide layer 222 is located on the surface of the second collimating layer 220. The second pinhole PH2 penetrates through the second collimating layer 220 and the second oxide layer 222. The second planar layer 140 is located on the second oxide layer 222. The light-shielding structure 230 is located on the second planar layer 140. The third oxide layer 232 is located on the surface of the light-shielding structure 230. The opening O penetrates through the light-shielding structure 230 and the third oxide layer 232. The third planar layer 150 is located on the third oxide layer 232. The first lens array ML1A is located on the third planar layer 150 and is disposed corresponding to the opening O.

[0136] In this embodiment, the problem of uneven shape and thickness distribution of the first lens ML1 can be improved by the setting of the first dummy lens DML1.

Claims

1. A photosensitive device, comprising: A first photosensitive unit, comprising: A first photosensitive element; and A first control circuit, electrically connected to the first photosensitive element; A first collimation layer, located above the first photosensitive element, and having a first pinhole array, the first pinhole array including a first pinhole and a first dummy pinhole; A first lens array, located above the first collimation layer, and including a first lens and a first dummy lens, wherein the first lens overlaps the first photosensitive element and the first pinhole in a first direction, and the first dummy lens overlaps the first dummy pinhole in the first direction; The photosensitive device further comprises: A second collimation layer, located above the first collimation layer, wherein the second collimation layer has a second pinhole that overlaps the first pinhole in the first direction, and wherein the second collimation layer shields the first dummy pinhole in the first direction.

2. The photosensitive device according to claim 1, wherein the first dummy lens does not overlap the first photosensitive element in the first direction.

3. The photosensitive device according to claim 1, wherein the aperture of the second pinhole is larger than the aperture of the first pinhole.

4. The photosensitive device according to claim 3, further comprising: A first flat layer, located between the first collimation layer and the second collimation layer; A second flat layer, located on the second collimation layer; and A light-shielding structure, located on the second flat layer, wherein the light-shielding structure has a plurality of openings that overlap the first pinhole and the first dummy pinhole in the first direction, and the first lens and the first dummy lens are respectively disposed in the openings.

5. The photosensitive device according to claim 3, further comprising: A first flat layer, located between the first collimation layer and the second collimation layer; A second flat layer, located on the second collimation layer; and A light-shielding structure, located on the second flat layer, wherein the light-shielding structure has a plurality of openings that overlap the first pinhole and the first dummy pinhole in the first direction; and A third flat layer, located on the light-shielding structure, wherein the first lens and the first dummy lens are located on the third flat layer, and the first lens overlaps the corresponding opening in the first direction.

6. The photosensitive device according to claim 3, further comprising: A first flat layer, located between the first collimation layer and the second collimation layer, and the first flat layer has a first groove that overlaps the first dummy pinhole, and the second collimation layer fills the first groove.

7. The photosensitive device according to claim 6, wherein the second collimation layer contacts the first collimation layer.

8. The photosensitive device according to claim 6, further comprising: A second photosensitive unit, comprising: A second photosensitive element; and A second control circuit, electrically connected to the second photosensitive element, wherein the first collimation layer has a plurality of first pinholes and a plurality of first dummy pinholes; and A plurality of first lenses are located above the first collimation layer, and one of the first lenses overlaps the first photosensitive element and one of the first pinholes in the first direction, and another one of the first lenses overlaps the second photosensitive element and another one of the first pinholes in the first direction; A plurality of first dummy lenses are located above the first collimation layer, wherein the first dummy lenses respectively overlap corresponding first dummy pinholes in the first direction and do not overlap the first photosensitive element and the second photosensitive element; and A second flat layer is located on the second collimation layer, and the second flat layer has a second groove overlapping the second photosensitive unit, and the first groove overlaps the first photosensitive unit.

9. The photosensitive device according to claim 1, further comprising: A first substrate and a second substrate, wherein there is a gap between the first substrate and the second substrate, wherein the first photosensitive element is located between a first side of the gap close to the first substrate and the first substrate, and the first lens and the first dummy lens are located on a second side of the gap close to the second substrate.

10. The photosensitive device according to claim 9, further comprising: A spacer is located between the first substrate and the second substrate, and the first dummy lens contacts the top surface of the spacer.

11. The photosensitive device according to claim 9, further comprising: A filter element is located between the second substrate and the first lens and between the second substrate and the first dummy lens.

12. The photosensitive device according to claim 9, further comprising: A second lens is located on the first side of the gap, and the second lens overlaps the first lens in the first direction; and A second dummy lens is located on the first side of the gap, and the second dummy lens overlaps the first dummy lens in the first direction.

13. The photosensitive device according to claim 12, further comprising: A spacer is located between the first substrate and the second substrate, wherein the first dummy lens contacts the top surface of the spacer, and the spacer covers the second dummy lens.

14. The photosensitive device according to claim 1, wherein the first dummy lens and the first dummy pinhole overlap the first control circuit in the first direction.

15. The photosensitive device according to claim 1, wherein the first lens array includes a plurality of first lenses and a plurality of first dummy lenses arranged in an array in a second direction and a third direction, wherein the first lenses and the first dummy lenses have the same first pitch in the second direction, and the first lenses and the first dummy lenses have the same second pitch in the third direction.

16. The photosensitive device according to claim 1, wherein the first lens and the first dummy lens have the same radius of curvature, the same thickness, and the same material.

17. The photosensitive device according to claim 1, wherein the first pinhole array includes a plurality of first pinholes and a plurality of first dummy pinholes arranged in an array in a second direction and a third direction, wherein the first pinholes and the first dummy pinholes have the same first pitch in the second direction, and the first pinholes and the first dummy pinholes have the same second pitch in the third direction.

18. The photosensitive device according to claim 1, wherein the first pinhole and the first dummy pinhole have the same aperture diameter.

19. The photosensitive device according to claim 1, further comprising: a first oxide layer located on the surface of the first collimating layer, and the first pinhole and the first dummy pinhole penetrate through the first collimating layer and the first oxide layer.

20. The photosensitive device according to claim 1, wherein the aperture diameter of the first pinhole and the first dummy pinhole is in the range of 2 micrometers to 6 micrometers.

Images