A storage device, bandwidth adjustment method and electronic equipment

Abstract

A storage device, a bandwidth adjustment method and an electronic device, the storage device can include a temperature monitoring module, a bandwidth control module and M memory dies, M is an integer greater than 1; the temperature monitoring module is used for monitoring the temperature of N memory dies in the M memory dies, N is an integer greater than or equal to 1 and less than or equal to M; the bandwidth control module is used for adjusting the bandwidth of the first memory die according to the temperature of the first memory die, the first memory die is any memory die in the N memory dies. The storage device can improve the flexibility of the memory.

Description

Technical Field

[0001] The present invention relates to the field of chip technology, and in particular to a storage device, a bandwidth adjustment method, and an electronic device. Background Technology

[0002] Memory is a storage component used to store programs and various data. For electronic devices, memory is essential for their proper functioning; it provides the necessary information for memory. Therefore, memory is an indispensable component for the normal operation of electronic devices. Memory bandwidth refers to the amount of information that memory can access per unit of time, also known as the number of bits or bytes read / written per unit of time. Currently, memory parameters can be preset before use, and the bandwidth can be determined based on these parameters during operation. While this method allows the bandwidth to be determined based on pre-configured parameters after use, it does not allow for dynamic adjustment of the bandwidth, thus reducing the flexibility of the memory. Summary of the Invention

[0003] This invention discloses a storage device, a bandwidth adjustment method, and an electronic device for improving the flexibility of the storage device.

[0004] The first aspect discloses a storage device, which may include a temperature monitoring module, a bandwidth control module, and M memory dies, where M is an integer greater than 1; the temperature monitoring module is used to monitor the temperature of N memory dies among the M memory dies, where N is an integer greater than or equal to 1 and less than or equal to M; the bandwidth control module is used to adjust the bandwidth of a first memory die according to the temperature of the first memory die, where the first memory die is any one of the N memory dies.

[0005] The storage device disclosed in this invention can monitor the temperature of N memory chips out of M memory chips through a temperature monitoring module. This means the module can monitor the temperature of some or all memory chips and adjust the bandwidth of each memory chip based on its monitored temperature. Specifically, when a temperature change is detected in a memory chip, the bandwidth can be adjusted accordingly. Therefore, the bandwidth of the memory chips can be dynamically adjusted based on their temperature, thus improving the flexibility of the storage device. For example, in a storage device that is essentially a memory chip, this improves the flexibility of the storage device; in a storage device that includes memory chips, it improves the flexibility of the memory chips within the storage device, thereby enhancing the overall flexibility of the storage device. Furthermore, since the bandwidth of the memory chips can be dynamically adjusted based on their temperature, it ensures that the memory chip temperature does not become too high, preventing damage due to overheating. Moreover, because the monitoring focuses on the temperature of the memory chips, and the bandwidth adjustment is based on this temperature, the adjustment is more targeted.

[0006] As one possible implementation, the storage device may further include a memory control module, which is coupled to a bandwidth control module and M memory chips respectively; the bandwidth control module is specifically used to generate bandwidth adjustment information based on the temperature of the first memory chip and send the bandwidth adjustment information to the memory control module; the memory control module is used to adjust the bandwidth of the first memory chip based on the bandwidth adjustment information.

[0007] The storage device disclosed in this embodiment of the invention further includes a memory control module coupled to a bandwidth control module and M memory chips respectively. The memory control module is used to adjust the parameters of the memory chips. Therefore, when the bandwidth of the memory chips is adjusted according to the temperature by adjusting the parameters of the memory chips, the bandwidth control module can first generate bandwidth adjustment information based on the monitored temperature, and then transmit the bandwidth adjustment information to the memory control module. The memory control module then adjusts the parameters of the memory chips according to the bandwidth adjustment information, so that the bandwidth of the memory chips can be adjusted by adjusting the parameters of the memory chips.

[0008] As one possible implementation, the temperature monitoring module may include K temperature sensors (T-sensors), where K is an integer greater than or equal to 1; specifically, the temperature monitoring module is used to monitor the temperature of N memory chips out of M memory chips using L temperature sensors, where L is an integer greater than or equal to N and less than or equal to K.

[0009] The storage device disclosed in this invention includes a temperature monitoring module that may include one or more temperature sensors. Each temperature sensor can only monitor the temperature of one location at a time. One or more temperature sensors can be used to monitor a memory chip simultaneously. The higher the accuracy and the greater the number of temperature sensors monitoring a memory chip, the more accurate the monitored temperature, thereby improving bandwidth control accuracy.

[0010] As one possible implementation, the storage device may also include a temperature sensor mapping module, which couples K temperature sensors and M memory chips respectively; the temperature sensor mapping module is used to control a first temperature sensor to monitor a second memory chip according to a gating signal, wherein the first temperature sensor is one of L temperature sensors and the second memory chip is one of N memory chips.

[0011] The storage device disclosed in this embodiment of the invention further includes a temperature sensor mapping module. Since a temperature sensor may be used to monitor the temperature of a single memory chip, or it may monitor the temperature of any one of multiple memory chips, the user can configure which service accesses which memory chip or which part of a memory chip before each use of the memory. Therefore, when a service accesses the storage device, the temperature sensor mapping module can control which temperature sensor monitors which memory chip based on a gating signal, or control which temperature sensor to operate based on a gating signal, so as to monitor the temperature of different memory chips in real time according to the gating signal.

[0012] As one possible implementation, the memory control module is also used to send control signals to the service module, which are used to instruct the service module to stop using the storage device or to instruct the service module to use the storage device.

[0013] The storage device disclosed in this embodiment of the invention has a memory control module that, in addition to modifying the parameters of the memory chip, can also send control signals to the service module so that the service module can stop using the storage device or use the storage device according to the control signals, thereby improving the control capability of the storage device.

[0014] As one possible implementation, the memory control module is specifically used to generate a first control signal and send it to the service module when the available bandwidth of the storage device is less than a threshold. The first control signal is used to instruct the service module to stop using the storage device.

[0015] The storage device disclosed in this embodiment of the invention indicates that the available bandwidth of the storage device is less than a threshold, which means that the current available bandwidth is low. The device can send a first control signal to the service module so that the service module can stop using the storage device according to the first control signal, thereby reducing the bandwidth pressure on the storage device and reducing or slowing down the rate at which the temperature of the storage device continues to rise.

[0016] As one possible implementation, the memory control module is specifically used to generate a second control signal when the available bandwidth of the storage device is greater than or equal to a threshold, and send the second control signal to the service module. The second control signal is used to instruct the service module to use the storage device.

[0017] The storage device disclosed in this embodiment of the invention indicates that there is a large amount of available bandwidth when the available bandwidth of the storage device is greater than or equal to a threshold. It can then send a second control signal to the service module so that the service module can use the storage device according to the second control signal, thereby improving the utilization rate of the storage device.

[0018] As one possible implementation, when adjusting the bandwidth of the first memory chip according to its temperature, it can be to adjust the number of operations per second (OPS) of the first memory chip according to its temperature, or the number of bits per second (BPS) of the first memory chip according to its temperature, or the refresh rate of the first memory chip according to its temperature, or the bandwidth of the first memory chip according to its temperature and service requirements.

[0019] The storage device disclosed in this invention has the following parameters: the OPS of the first memory chip is the number of times the first memory chip is accessed within a certain time window; the BPS of the first memory chip is the number of bits accessed within a certain time window; and the refresh rate of the first memory chip is the number of times the first memory chip is refreshed within a certain time window. This method is only applicable to memory chips that support refresh.

[0020] The second aspect discloses a bandwidth adjustment method applied to a storage device, the storage device comprising M memory chips, where M is an integer greater than 1, the method comprising:

[0021] Monitor the temperature of N memory chips out of the M memory chips, where N is an integer greater than or equal to 1 and less than or equal to M;

[0022] The bandwidth of the first memory chip is adjusted according to the temperature of the first memory chip, where the first memory chip is any one of the N memory chips.

[0023] As one possible implementation, adjusting the bandwidth of the first memory chip according to its temperature includes:

[0024] Bandwidth adjustment information is generated based on the temperature of the first memory chip;

[0025] The bandwidth of the first memory chip is adjusted according to the bandwidth adjustment information.

[0026] As one possible implementation, the storage device further includes K temperature sensors, where K is an integer greater than or equal to 1;

[0027] The monitoring of the temperature of N memory chips out of the M memory chips includes:

[0028] The temperature of N memory chips out of the M memory chips is monitored using L temperature sensors, where L is an integer greater than or equal to N and less than or equal to K.

[0029] As one possible implementation, the method further includes:

[0030] The first temperature sensor is controlled by a gating signal to monitor the second memory chip. The first temperature sensor is one of the L temperature sensors, and the second memory chip is one of the N memory chips.

[0031] As one possible implementation, the method further includes:

[0032] A control signal is sent to the service module, the control signal being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device.

[0033] As one possible implementation, sending a control signal to the service module, the control signal being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device, includes:

[0034] When the available bandwidth of the storage device is less than a threshold, a first control signal is generated and sent to the service module. The first control signal is used to instruct the service module to stop using the storage device.

[0035] As one possible implementation, sending a control signal to the service module, the control signal being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device, includes:

[0036] When the available bandwidth of the storage device is greater than or equal to a threshold, a second control signal is generated and sent to the service module. The second control signal is used to instruct the service module to use the storage device.

[0037] As one possible implementation, adjusting the bandwidth of the first memory chip according to its temperature includes:

[0038] Adjust the OPS of the first memory chip according to its temperature; or

[0039] Adjust the BPS of the first memory chip according to the temperature of the first memory chip; or

[0040] Adjust the refresh rate of the first memory chip according to its temperature; or

[0041] The bandwidth of the first memory chip is adjusted according to its temperature and service requirements.

[0042] The third aspect discloses a system-on-a-chip (SoC) that includes the storage device disclosed in the first aspect or any possible implementation thereof. The SoC may be composed of a storage device or may include a storage device and other discrete components.

[0043] The fourth aspect discloses an electronic device comprising a storage device disclosed in the first aspect or any possible implementation thereof, and discrete devices coupled to the storage device. Attached Figure Description

[0044] Figure 1 This is a schematic diagram of the structure of HBM disclosed in an embodiment of the present invention;

[0045] Figure 2 This is a schematic diagram of the structure of a storage device disclosed in an embodiment of the present invention;

[0046] Figure 3 This is a schematic diagram of another storage device disclosed in an embodiment of the present invention;

[0047] Figure 4 This is a schematic diagram of a temperature sensor mapping module disclosed in an embodiment of the present invention;

[0048] Figure 5This is a schematic diagram of a bandwidth control module disclosed in an embodiment of the present invention;

[0049] Figure 6 This is a schematic diagram of a memory control module disclosed in an embodiment of the present invention;

[0050] Figure 7 This is a schematic diagram of the structure of another storage device disclosed in an embodiment of the present invention;

[0051] Figure 8 This is a schematic flowchart of a bandwidth adjustment method disclosed in an embodiment of the present invention. Detailed Implementation

[0052] This invention discloses a storage device, a bandwidth adjustment method, and an electronic device to improve the flexibility of the storage device. The embodiments of this invention will now be described with reference to the accompanying drawings.

[0053] The terms "first," "second," "third," and "fourth," etc., used in the specification, claims, and drawings of this invention are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0054] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0055] To better understand the storage device, bandwidth adjustment method, and electronic device disclosed in the embodiments of the present invention, the application scenarios used in the embodiments of the present invention are described below. High bandwidth memory (HBM) is a high-performance dynamic random access memory (DRAM) based on three-dimensional (3D) stacking technology, suitable for applications with high memory bandwidth requirements such as graphics processing units (GPUs) and network switching and forwarding devices (such as routers and switches). Compared with double data rate synchronous dynamic random access memory (DDR) and graphics double data rate version 5 (GDDR5), HBM is smaller in size and consumes less power. Please refer to... Figure 1 , Figure 1 This is a schematic diagram of an HBM structure disclosed in an embodiment of the present invention. Figure 1 As shown, HBM can include multiple DRAM dies and substrate dies. The DRAM dies are stacked on the substrate dies, and the DRAM dies and substrate dies can be connected through through silicon vias (TSVs) and microbumps. Figure 1 The diagram illustrates that HBM includes four DRAM chips, but it can also include five DRAM chips, or other numbers of DRAM chips; this is not limited here. Each DRAM chip includes one or more channels, and each channel includes one or more banks. Currently, 3D memories such as HBM only output a global temperature. The memory control module can only perform coarse bandwidth control on the memory based on this temperature, resulting in low precision and affecting the utilization of memory bandwidth. The memory control module can be located inside the memory or outside the memory; for example, it can be located in the processor, or it can be partially located inside and partially outside the memory.

[0056] The storage device, bandwidth adjustment method, and electronic device disclosed in this invention can be applied not only to HBM and DRAM stacking structures similar to HBM, but also to various other memories and stacking structures such as static random access memory (SRAM), magnetic random access memory (MRAM), and DDR, without limitation.

[0057] To better understand the storage device, bandwidth adjustment method, and electronic device disclosed in the embodiments of the present invention, the terminology used in the embodiments of the present invention will be described below.

[0058] Memory is a component used to store programs and data. For a computer, memory is essential for its ability to remember and function properly. There are many types of memory, which can be divided into main memory and auxiliary memory according to their purpose. Main memory is also called internal memory, or simply RAM. Peripheral storage refers to memory other than computer RAM and CPU cache. This type of memory can generally retain data even after power is off. Common external storage devices include hard drives, floppy disks, optical disks, and USB flash drives. Any hardware with storage capabilities can be called memory.

[0059] A cache is a buffer for data exchange. When hardware needs to read data, it first looks for the required data in the cache. If found, it executes the data directly; otherwise, it looks for it in memory. Because the cache runs much faster than memory, its role is to help hardware run faster. Since the cache often uses random access memory (RAM) (non-permanent storage that is lost when power is off), the file is still permanently stored on a hard drive or other storage device after use.

[0060] A channel is a computer term referring to an opcode, counter segment, or memory address segment. It enables data transfer between memory and peripherals. A channel is a dedicated input / output (I / O) control processor, independent of the central processing unit (CPU), that controls direct data exchange between devices and memory. It has its own channel commands, which are initiated by the CPU and interrupted by the CPU upon completion. Channel instructions typically consist of an opcode, counter segment, memory address segment, and end flag. A system can establish three types of channels: byte multiplexed channels, array multiplexed channels, and selection channels.

[0061] RAM (Random Access Memory) is a type of memory where the contents of storage cells can be retrieved or stored as needed, and the access speed is independent of the location of the storage cell. This type of memory loses its stored contents when power is off, so it is mainly used to store programs used for short periods. Depending on the type of information stored, random access memory is further divided into SRAM (Single Random Access Memory) and DRAM (Dynamic Random Access Memory).

[0062] Please see Figure 2 , Figure 2 This is a schematic diagram of the structure of a storage device disclosed in an embodiment of the present invention. Figure 2As shown, the storage device may include a temperature monitoring module, a bandwidth control module, and M memory chips, where M is an integer greater than 1.

[0063] The temperature monitoring module is used to monitor the temperature of N memory chips out of M memory chips, where N is an integer greater than or equal to 1 and less than or equal to M.

[0064] A bandwidth control module is used to adjust the bandwidth of the first memory chip according to the temperature of the first memory chip, wherein the first memory chip is any one of N memory chips.

[0065] The temperature monitoring module monitors the temperature of N memory chips out of M memory chips. The bandwidth control module can obtain the temperatures of the N memory chips from the temperature monitoring module in real time or periodically. It can then determine whether the temperature of the first memory chip is greater than (or equal to) a first threshold. If the temperature of the first memory chip is greater than (or equal to) the first threshold, it indicates that the temperature of the first memory chip is high, and the bandwidth of the first memory chip can be adjusted according to its temperature to control whether the temperature continues to rise or to reduce the rate of temperature rise. If the temperature of the first memory chip is less than (or equal to) the first threshold, it indicates that the temperature of the first memory chip is low, and the current bandwidth of the first memory chip can be maintained; that is, the bandwidth of the first memory chip does not need to be adjusted according to its temperature. The first memory chip can be any one of the N memory chips. The temperature monitoring module monitors the temperature of the memory chips by coupling the memory chip, by monitoring the temperature near the memory chip, or by monitoring the temperature of other components synchronized with the memory chip.

[0066] Temperatures greater than or equal to a first threshold can be divided into multiple temperature ranges, each corresponding to a different bandwidth. When adjusting the bandwidth of the first memory chip based on its temperature, the bandwidth corresponding to the temperature of the first memory chip can be obtained based on the correspondence between temperature ranges and bandwidths. Then, the bandwidth of the first memory chip is adjusted based on the obtained bandwidth. If the current bandwidth of the first memory chip is the same as the obtained bandwidth, no adjustment is needed. If the current bandwidth of the first memory chip is different from the obtained bandwidth, the bandwidth of the first memory chip needs to be adjusted from the current bandwidth to the obtained bandwidth. The correspondence between temperature ranges and bandwidths for different memory chips can be the same or different. The method for adjusting the bandwidth of the memory chip corresponding to different temperature ranges of the same memory chip can be the same or different. The higher the temperature range, the smaller the corresponding bandwidth, and the lower the heat loss of the corresponding memory chip. This ensures that the temperature of the memory chip does not become too high, thus preventing damage to the memory chip due to overheating.

[0067] Please see Figure 3 , Figure 3 This is a schematic diagram of another storage device disclosed in an embodiment of the present invention. Wherein, Figure 3 It is by Figure 2 Optimized. For example... Figure 3 As shown, the storage device may further include a memory control module, which is coupled to a bandwidth control module and M memory chips.

[0068] The bandwidth control module is specifically used to generate bandwidth adjustment information based on the temperature of the first memory chip and send the bandwidth adjustment information to the memory control module.

[0069] The memory control module is used to adjust the bandwidth of the first memory chip according to the bandwidth adjustment information.

[0070] Since the parameters of the memory chip are adjusted by the memory control module, when it is necessary to adjust the bandwidth of the first memory chip based on its temperature, and this adjustment is achieved by adjusting the memory chip's parameters, the bandwidth control module can first generate bandwidth adjustment information based on the first memory chip's temperature, and then send this information to the memory control module. Upon receiving the adjustment information from the bandwidth control module, the memory control module can adjust the memory chip's parameters accordingly, thereby adjusting the bandwidth of the first memory chip.

[0071] The bandwidth adjustment information may include the bandwidth of the first memory chip, i.e., the bandwidth corresponding to the current temperature of the first memory chip. The memory control module adjusts the parameters of the first memory chip according to this bandwidth so that the adjusted bandwidth of the first memory chip is equal to the aforementioned bandwidth. The adjustment method, i.e., which parameter is adjusted, is preset and can be stored in the memory control module.

[0072] The bandwidth adjustment information may also include the value of a certain parameter of the first memory chip. Correspondingly, after the bandwidth control module obtains the bandwidth corresponding to the temperature of the first memory chip based on the correspondence between temperature range and bandwidth, it also needs to determine, based on this bandwidth, how much the value of this parameter needs to be adjusted so that the bandwidth of the first memory chip is equal to the obtained bandwidth. After receiving the adjustment information, the memory control module can adjust the value of this parameter of the first memory chip to the aforementioned value. The adjustment method, i.e., which parameter is adjusted, is preset and can be stored in the bandwidth control module.

[0073] In one embodiment, the temperature monitoring module may include K temperature sensors, where K is an integer greater than or equal to 1;

[0074] The temperature monitoring module is specifically used to monitor the temperature of N memory chips out of M memory chips using L temperature sensors, where L is an integer greater than or equal to N and less than or equal to K.

[0075] A temperature monitoring module may include one or more temperature sensors. Since a single temperature sensor can only monitor the temperature of one location at a time, a module with only one sensor can only monitor the temperature of one memory chip. Therefore, bandwidth adjustments for that memory chip can only be made based on its temperature, resulting in low bandwidth control precision. A single temperature sensor can monitor one memory chip, or multiple temperature sensors can monitor one memory chip simultaneously. Multiple temperature sensors can monitor different channels and / or different libraries within a single memory chip. Higher precision and a greater number of temperature sensors monitoring a memory chip lead to more accurate temperature monitoring and higher bandwidth control precision, thus improving overall bandwidth control accuracy.

[0076] In one embodiment, the storage device may further include a temperature sensor mapping module, which is coupled to K temperature sensors and M memory chips respectively.

[0077] The temperature sensor mapping module is used to control the first temperature sensor to monitor the second memory chip according to the gating signal. The first temperature sensor is one of L temperature sensors, and the second memory chip is one of N memory chips.

[0078] A temperature sensor may consistently monitor a single memory chip or a specific location within a memory chip. Whether or not the temperature of that memory chip or that location within it is monitored can be controlled by turning the temperature sensor on or off. A temperature sensor may also monitor the temperature of any one of multiple memory chips, meaning it has connection points with multiple memory chips. However, since a temperature sensor can only monitor the temperature of one location at a time, it's necessary to control which memory chip it monitors. Alternatively, a temperature sensor may monitor multiple locations within a single memory chip, meaning it has connection points with multiple locations such as channels and memory modules. Again, since a temperature sensor can only monitor the temperature of one location at a time, it's necessary to control which location within the memory chip it monitors. Therefore, before each use of the storage device, the user can set which service accesses which memory chip or which part of the memory chip. Thus, when a service accesses the storage device, the temperature sensor mapping module can control which temperature sensor monitors which memory chip or which location within the memory chip based on the gating signal, or control which temperature sensor to operate based on the gating signal, so as to monitor the temperature of different locations of different memory chips in real time based on the gating signal.

[0079] For a better explanation of the working principle of the temperature sensor mapping module, please refer to [link / reference]. Figure 4 , Figure 4 This is a schematic diagram of a temperature sensor mapping module disclosed in an embodiment of the present invention. Figure 4As shown, the temperature sensor mapping module stores a mapping table between temperature sensors and memory chips. This mapping table identifies which temperature sensor is connected to which memory chip or which location within a memory chip. When a service accesses the storage device, the temperature sensor mapping module can determine which temperature sensor is active and which sensor is monitoring which location's temperature based on the mapping table and a strobe signal. Specifically, the module can determine which memory chip or part of a memory chip the service needs to access based on the strobe signal, thus identifying which memory chip or part of the memory device needs to operate. Then, based on the mapping table, it determines which temperature sensors can monitor these active memory chips or parts of the memory chip. Finally, it controls these temperature sensors to monitor the temperature at these locations, acquires the monitored temperatures, and sends the selected temperatures to the bandwidth control module. The bandwidth control module can then adjust the storage device's bandwidth based on the selected temperature. In addition, in order for the bandwidth control module to adjust the bandwidth of the storage device, the temperature sensor mapping module can also send the monitoring location information of each temperature in the selected temperature range to the bandwidth control module, that is, send the temperature of which memory chip or which part of a memory chip to the bandwidth control module.

[0080] In some embodiments, the storage device may not include a temperature sensor mapping module, and the function of the temperature sensor mapping module may be implemented by a bandwidth control module.

[0081] In the case where the storage device includes a temperature sensor mapping module, please refer to [link to relevant documentation] for a better explanation of the operating principle of the bandwidth control module. Figure 5 , Figure 5 This is a schematic diagram of a bandwidth control module disclosed in an embodiment of the present invention. Figure 5As shown, the bandwidth control module stores the correspondence between temperature and bandwidth. This correspondence can be a temperature range versus bandwidth or a temperature value versus bandwidth. The temperature-bandwidth correspondence can include the temperature of the memory chip versus its bandwidth. The temperature of the memory chip can be the overall temperature of the memory chip or the temperature of different parts of the memory chip. The temperature-bandwidth correspondence for different parts of the same memory chip can be the same or different. After receiving the selected temperature from the temperature sensor mapping module, the bandwidth control module can adjust the bandwidth of the storage device based on the selected temperature and the correspondence. Specifically, the bandwidth of the storage device can be adjusted based on the selected temperature, the monitoring location information of the selected temperature, and the correspondence. When the bandwidth adjustment of the memory chip is achieved by adjusting the parameters of the memory chip, the bandwidth control module can determine the selected bandwidth based on the selected temperature, the monitoring location information of the selected temperature, and the correspondence, and send the selected bandwidth to the memory control module. Furthermore, the information of the memory chip corresponding to each bandwidth within the selected bandwidth can also be sent to the memory control module. For details on how to adjust this bandwidth, please refer to other descriptions of the bandwidth control module.

[0082] In one embodiment, the memory control module is further configured to send a control signal to the service module, the control signal being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device.

[0083] In addition to modifying the parameters of the memory chip, the memory control module can also send control signals to the service module so that the service module can stop using the memory device or use the memory device according to the control signals.

[0084] In one embodiment, the memory control module is specifically configured to generate a first control signal when the available bandwidth of the storage device is less than a threshold, and send the first control signal to the service module, the first control signal being used to instruct the service module to stop using the storage device.

[0085] When the available bandwidth of the storage device is less than a threshold, indicating insufficient available bandwidth, a first control signal can be sent to the service module. This allows the service module to stop using the storage device, thereby reducing bandwidth pressure on the storage device and slowing down or preventing further temperature increases. The first control signal can be a reverse voltage signal or other signals with equivalent functionality.

[0086] In one embodiment, the memory control module is specifically configured to generate a second control signal when the available bandwidth of the storage device is greater than or equal to a threshold, and send the second control signal to the service module, the second control signal being used to instruct the service module to use the storage device.

[0087] If the available bandwidth of the storage device is greater than or equal to a threshold, it indicates that there is sufficient available bandwidth. A second control signal can then be sent to the service module, allowing the service module to utilize the storage device accordingly, thereby improving storage device utilization. The second control signal can be a credit signal; each time a credit signal is sent, the service module uses the storage device once. The second control signal can also be any other signal with equivalent functionality. There is no limit to the number of times the service module uses the storage device for each second control signal sent.

[0088] In one embodiment, adjusting the bandwidth of the first memory chip according to its temperature includes:

[0089] Adjust the OPS of the first memory chip according to its temperature; or

[0090] Adjust the BPS of the first memory chip according to the temperature of the first memory chip; or

[0091] Adjust the refresh rate of the first memory chip according to its temperature; or

[0092] The bandwidth of the first memory chip is adjusted according to the temperature of the first memory chip and the service requirements.

[0093] The OPS of the first memory chip is the number of times the first memory chip is accessed within a certain time window. The BPS of the first memory chip is the number of bits accessed within a certain time window. The bandwidth of the first memory chip is adjusted according to its temperature and service requirements. Service requirements can be based on service priority. For example, since higher service priority indicates greater importance, when the first memory chip temperature is high, higher priority services can be prioritized for use of the storage device. For lower priority services, the time for using the storage device can be delayed, the service can be dropped, packet loss can be applied, or burst control can be implemented. All three methods of adjusting the bandwidth of the first memory chip are independent of the memory chip parameters; therefore, the bandwidth control module can adjust the bandwidth without the involvement of the memory control module. The refresh rate of the first memory chip is the number of times it is refreshed within a certain time window. This method is only applicable to memory chips that support refresh and is related to the refresh rate of the first memory chip; therefore, the memory control module is required to adjust the bandwidth.

[0094] When adjusting the bandwidth of the memory chip is achieved by adjusting the parameters of the memory chip, please refer to [link to relevant documentation] for a better explanation of the working principle of the memory control module. Figure 6 , Figure 6 This is a schematic diagram of a memory control module disclosed in an embodiment of the present invention. Figure 6 As shown, the memory control module stores a bandwidth configuration table, which includes the correspondence between the bandwidth of the memory chip and its parameters. The correspondence can be the same or different for different memory chips. After receiving the selected bandwidth from the bandwidth control module, the memory control module can adjust the parameters of the memory chip according to the selected bandwidth and the bandwidth configuration table. Specifically, the chip parameters can be adjusted based on the selected bandwidth, the information of the memory chip corresponding to the selected bandwidth, and the bandwidth configuration table. For details on how to adjust these parameters, please refer to other descriptions of the memory control module. Figure 6 As shown, before bandwidth adjustment, access to the storage device was determined by the service; after bandwidth adjustment, access to the storage device is determined by the memory control module. Furthermore, the memory control module can also determine whether to send flow control feedback, such as the first control signal and the second control signal mentioned above, based on the storage device's bandwidth.

[0095] Please see Figure 7 , Figure 7 This is a schematic diagram of the structure of another storage device disclosed in an embodiment of the present invention. For example... Figure 7As shown, the storage device may include multiple temperature sensors (eight shown in the figure), multiple memory chips (four shown in the figure), and a substrate chip. Each memory chip includes multiple channels (six shown in the figure). The substrate chip includes a temperature sensor mapping module, a bandwidth control module, and a memory control module. For a detailed description of each part of this storage device, please refer to the above. Figures 2-3 The relevant descriptions in the storage device embodiments described herein will not be repeated here.

[0096] Please see Figure 8 , Figure 8 This is a flowchart illustrating a bandwidth adjustment method disclosed in an embodiment of the present invention. The method is applied to... Figure 2 , Figure 3 and Figure 7 The storage device shown can include M memory chips, where M is an integer greater than 1. For example... Figure 8 The bandwidth adjustment method may include the following steps.

[0097] 801. Monitor the temperature of N memory chips out of M memory chips.

[0098] Where N is an integer greater than or equal to 1 and less than or equal to M.

[0099] 802. Adjust the bandwidth of the first memory chip according to the temperature of the first memory chip.

[0100] The first memory chip is any one of the N memory chips.

[0101] Optionally, step 802 may include:

[0102] Bandwidth adjustment information is generated based on the temperature of the first memory chip;

[0103] The bandwidth of the first memory chip is adjusted based on the bandwidth adjustment information.

[0104] Optionally, the storage device may also include K temperature sensors, where K is an integer greater than or equal to 1;

[0105] Step 801 may include:

[0106] The temperature of N memory chips out of M memory chips is monitored using L temperature sensors, where L is an integer greater than or equal to N and less than or equal to K.

[0107] Optionally, the above method may further include:

[0108] The first temperature sensor is controlled by the gating signal to monitor the second memory chip. The first temperature sensor is one of L temperature sensors, and the second memory chip is one of N memory chips.

[0109] Optionally, the above method may further include:

[0110] Send control signals to the service module. The control signals are used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device.

[0111] Optionally, a control signal is sent to the service module. The control signal is used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device, including:

[0112] When the available bandwidth of the storage device is less than a threshold, a first control signal is generated and sent to the service module. The first control signal is used to instruct the service module to stop using the storage device.

[0113] As one possible implementation, a control signal is sent to the service module. This control signal instructs the service module to stop using the storage device, or instructs the service module to use the storage device, including:

[0114] When the available bandwidth of the storage device is greater than or equal to the threshold, a second control signal is generated and sent to the service module. The second control signal is used to instruct the service module to use the storage device.

[0115] As one possible implementation, step 802 may include:

[0116] Adjust the OPS of the first memory chip according to its temperature; or

[0117] Adjust the BPS of the first memory chip according to the temperature of the first memory chip; or

[0118] Adjust the refresh rate of the first memory chip according to its temperature; or

[0119] The bandwidth of the first memory chip is adjusted according to its temperature and service requirements.

[0120] It should be noted that the specific processes and related functions of the bandwidth adjustment method described in the embodiments of the present invention can be found in the above-mentioned... Figure 2 , Figure 3 and Figure 7 The relevant descriptions in the storage device embodiments described herein will not be repeated here.

[0121] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made on the basis of the technical solution of the present invention should be included within the scope of protection of the present invention.

Claims

1. A storage device, characterized in that, It includes a temperature monitoring module, a bandwidth control module, and M memory chips, where M is an integer greater than 1; The temperature monitoring module is used to monitor the temperature of N memory chips out of the M memory chips, where N is an integer greater than or equal to 1 and less than or equal to M. The bandwidth control module is used to obtain the bandwidth corresponding to the temperature of the first memory chip according to the correspondence between temperature range and bandwidth when the temperature of the first memory chip is greater than or equal to a first threshold, and adjust the bandwidth of the first memory chip according to the bandwidth corresponding to the temperature of the first memory chip, wherein the first memory chip is any one of the N memory chips; and to maintain the current bandwidth of the first memory chip when the temperature of the first memory chip is less than the first threshold.

2. The storage device according to claim 1, characterized in that, The storage device further includes a memory control module, which is coupled to the bandwidth control module and the M memory chips respectively. The bandwidth control module is specifically used to generate bandwidth adjustment information based on the bandwidth corresponding to the temperature of the first memory chip, and send the bandwidth adjustment information to the memory control module. The memory control module is used to adjust the bandwidth of the first memory chip according to the bandwidth adjustment information.

3. The storage device according to claim 1 or 2, characterized in that, The temperature monitoring module includes K temperature sensors, where K is an integer greater than or equal to 1; The temperature monitoring module is specifically used to monitor the temperature of N memory chips out of the M memory chips using L temperature sensors, where L is an integer greater than or equal to N and less than or equal to K.

4. The storage device according to claim 3, characterized in that, The storage device further includes a temperature sensor mapping module, which is coupled to the K temperature sensors and the M memory chips respectively. The temperature sensor mapping module is used to control a first temperature sensor to monitor a second memory chip according to a gating signal. The first temperature sensor is one of the L temperature sensors, and the second memory chip is one of the N memory chips.

5. The storage device according to any one of claims 2-4, characterized in that, The memory control module is further configured to send control signals to the service module, the control signals being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device.

6. The storage device according to claim 5, characterized in that, The memory control module is specifically configured to generate a first control signal and send the first control signal to the service module when the available bandwidth of the storage device is less than a threshold. The first control signal is used to instruct the service module to stop using the storage device.

7. The storage device according to claim 5, characterized in that, The memory control module is specifically configured to generate a second control signal and send the second control signal to the service module when the available bandwidth of the storage device is greater than or equal to a threshold. The second control signal is used to instruct the service module to use the storage device.

8. The storage device according to claim 1, characterized in that, The step of adjusting the bandwidth of the first memory chip according to the bandwidth corresponding to the temperature of the first memory chip includes: Adjust the number of operations per second (OPS) of the first memory chip according to its temperature; or Adjust the bits per second (BPS) of the first memory chip according to its temperature; or Adjust the refresh rate of the first memory chip according to its temperature; or The bandwidth of the first memory chip is adjusted according to its temperature and service requirements.

9. A bandwidth adjustment method, characterized in that, The method is applied to a storage device, the storage device comprising M memory chips, where M is an integer greater than 1, and the method includes: Monitor the temperature of N memory chips out of the M memory chips, where N is an integer greater than or equal to 1 and less than or equal to M; When the temperature of the first memory chip is greater than or equal to the first threshold, the bandwidth corresponding to the temperature of the first memory chip is obtained according to the correspondence between the temperature range and the bandwidth, and the bandwidth of the first memory chip is adjusted according to the bandwidth corresponding to the temperature of the first memory chip. The first memory chip is any memory chip among the N memory chips. When the temperature of the first memory chip is below a first threshold, the current bandwidth of the first memory chip is maintained.

10. The method according to claim 9, characterized in that, The step of adjusting the bandwidth of the first memory chip according to the bandwidth corresponding to the temperature of the first memory chip includes: Bandwidth adjustment information is generated based on the bandwidth corresponding to the temperature of the first memory chip; The bandwidth of the first memory chip is adjusted according to the bandwidth adjustment information.

11. The method according to claim 9 or 10, characterized in that, The storage device also includes K temperature sensors, where K is an integer greater than or equal to 1; The monitoring of the temperature of N memory chips out of the M memory chips includes: The temperature of N memory chips out of the M memory chips is monitored using L temperature sensors, where L is an integer greater than or equal to N and less than or equal to K.

12. The method according to claim 11, characterized in that, The method further includes: The first temperature sensor is controlled by a gating signal to monitor the second memory chip. The first temperature sensor is one of the L temperature sensors, and the second memory chip is one of the N memory chips.

13. The method according to any one of claims 10-12, characterized in that, The method further includes: A control signal is sent to the service module, the control signal being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device.

14. The method according to claim 13, characterized in that, Sending a control signal to the service module, the control signal being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device, includes: When the available bandwidth of the storage device is less than a threshold, a first control signal is generated and sent to the service module. The first control signal is used to instruct the service module to stop using the storage device.

15. The method according to claim 13, characterized in that, Sending a control signal to the service module, the control signal being used to instruct the service module to stop using the storage device, or to instruct the service module to use the storage device, includes: When the available bandwidth of the storage device is greater than or equal to a threshold, a second control signal is generated and sent to the service module. The second control signal is used to instruct the service module to use the storage device.

16. The method according to claim 9, characterized in that, The step of adjusting the bandwidth of the first memory chip according to the bandwidth corresponding to the temperature of the first memory chip includes: Adjust the number of operations per second (OPS) of the first memory chip according to its temperature; or Adjust the bits per second (BPS) of the first memory chip according to its temperature; or Adjust the refresh rate of the first memory chip according to its temperature; or The bandwidth of the first memory chip is adjusted according to its temperature and service requirements.

17. An electronic device, characterized in that, include: The storage device as claimed in any one of claims 1-8, and the discrete device coupled to the storage device.

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