A waste liquid discharge system, a waste liquid discharge method, and an application
By using components such as compressed gas storage devices, pneumatic diaphragm valves, and siphon devices in ECD equipment, waste liquid is drawn from the top of the deposition chamber and separated for discharge, solving the problem of plating solution flowing back into the process chamber and improving the stability of the plating solution and product quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC
- Filing Date
- 2022-05-24
- Publication Date
- 2026-05-12
AI Technical Summary
In existing ECD equipment, during the deposition chamber process, the plating solution spun dry on the wafer cannot be discharged from the bottom of the chamber. The accumulated waste liquid flows back into the process chamber, affecting the stability of the plating solution composition and causing quality problems.
The system employs a compressed gas storage device, a pneumatic diaphragm valve, a siphon device, and a gas-liquid separation device. Waste liquid is drawn from the upper part of the sedimentation chamber through the siphon effect, and then separated into gas and liquid components for final discharge.
It effectively solves the problem of waste liquid flowing back into the deposition chamber, improves the stability of the plating solution composition and the quality of the final product, simplifies the discharge method, and does not rely on complex processes.
Smart Images

Figure CN114937622B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of waste liquid discharge from semiconductor equipment, and more specifically, to a waste liquid discharge system, a waste liquid discharge method, and its application. Background Technology
[0002] Electrochemical deposition (ECD) is an important method for metallizing integrated circuits (ICs), offering lower costs and higher deposition efficiency compared to sputtering and evaporation. As ICs continue to evolve towards lighter, thinner, shorter, and smaller designs, chip manufacturers are placing higher demands on the performance of ECD equipment. Currently, the performance of ECD equipment on the market cannot meet these evolving needs. One problem is that during the deposition chamber process, the plating solution spun dry on the wafer cannot be drained from the bottom of the chamber. The accumulated waste solution flows back into the process chamber, affecting the stability of the plating solution composition and causing a series of quality issues.
[0003] In view of this, the present invention is hereby proposed. Summary of the Invention
[0004] The primary objective of this invention is to provide a waste liquid discharge system. This system has a rationally designed set of components and structure, which can effectively solve the problem of plating solution accumulating on the wafer and flowing back into the process chamber during the deposition chamber process.
[0005] The second objective of this invention is to provide a waste liquid discharge method. The waste liquid discharge method uses the aforementioned waste liquid discharge system, which is simple, easy to operate, requires no complex process conditions, and can effectively discharge the plating solution in the deposition chamber.
[0006] A third objective of this invention is to provide an electrochemical deposition system, which includes the aforementioned waste liquid discharge system, capable of effectively discharging electroplating waste liquid from the deposition chamber and improving the deposition effect.
[0007] The fourth objective of this invention is an electrochemical deposition method, which includes the waste liquid discharge method, and can avoid the problem that the plating effect is affected by the inability to effectively discharge the plating solution.
[0008] In order to achieve the above-mentioned objectives of the present invention, the following technical solution is adopted:
[0009] The waste liquid discharge system provided by the present invention includes: a compressed gas storage device, a first pneumatic diaphragm valve, a siphon device, a second pneumatic diaphragm valve, a sedimentation chamber, and a gas-liquid separation device;
[0010] The compressed gas storage device, the first pneumatic diaphragm valve, the siphon device, the second pneumatic diaphragm valve, and the deposition chamber are connected in sequence.
[0011] The gas-liquid separation device is connected to the gas-liquid mixing outlet of the siphon device.
[0012] In existing deposition chamber processes, the plating solution spun dry on the wafer cannot be discharged from the bottom of the chamber, causing the accumulated waste liquid to flow back into the process chamber, thus affecting the stability of the plating solution composition and the quality of the final product. Compared with existing plating solution discharge systems, the waste liquid discharge system provided by this invention uses components such as a pneumatic diaphragm valve, a siphon device, and a gas-liquid separator to draw waste liquid from the top of the deposition chamber through the siphon effect, perform gas-liquid separation, and finally discharge them separately, effectively solving the problem of waste liquid flowing back into the deposition chamber.
[0013] Preferably, a flow detection device is provided between the second pneumatic diaphragm valve and the siphon device.
[0014] Preferably, the outlet of the compressed gas storage device is equipped with a pressure reducing valve.
[0015] Preferably, a diaphragm check valve is provided between the first pneumatic diaphragm valve and the siphon device.
[0016] The waste liquid discharge method provided by this invention, using the aforementioned waste liquid discharge system, includes the following steps:
[0017] Compressed gas is introduced into the siphon device from the compressed gas storage device; waste liquid in the sedimentation chamber enters the siphon device; the compressed gas and the waste liquid in the sedimentation chamber enter the gas-liquid separation device for gas-liquid separation; the separated waste liquid in the sedimentation chamber is discharged.
[0018] Currently, the performance of ECD equipment in existing technologies cannot meet the demands of future development. One problem is that during the deposition chamber process, the plating solution spun dry on the wafer cannot be discharged from the bottom of the chamber, causing the accumulated waste liquid to flow back into the process chamber, thus affecting the stability of the plating solution composition and causing a series of quality problems. The waste liquid discharge method provided by this invention uses the aforementioned waste liquid discharge system, which utilizes a compressed gas storage device to introduce compressed gas into a siphon device; the waste liquid in the deposition chamber is drawn into the siphon device from the top of the deposition chamber; the compressed gas and the waste liquid in the deposition chamber enter a gas-liquid separation device for gas-liquid separation; the separated waste liquid in the deposition chamber is then discharged. This effectively solves the problem of ineffective waste liquid discharge.
[0019] Preferably, the first pneumatic diaphragm valve is opened, and the compressed gas storage device introduces compressed gas into the siphon device.
[0020] Preferably, the second pneumatic diaphragm valve is opened, and the waste liquid in the deposition chamber enters the siphon device.
[0021] Preferably, the flow rate of the waste liquid in the deposition chamber is detected during the process of the waste liquid entering the siphon device.
[0022] The electrochemical deposition system provided by the present invention includes the aforementioned waste liquid discharge system.
[0023] The electrochemical deposition system described above can effectively discharge electroplating waste liquid from the deposition chamber, thereby improving the deposition effect.
[0024] The electrochemical deposition method provided by this invention includes the aforementioned waste liquid discharge method.
[0025] The electrochemical deposition method described above can avoid the problem of affecting the deposition effect due to the inability of the plating solution to be effectively drained.
[0026] Compared with the prior art, the beneficial effects of the present invention are as follows:
[0027] (1) The waste liquid discharge system provided by this invention has a reasonable component arrangement and can discharge the waste liquid in the deposition chamber from the top. In the existing deposition chamber process, the plating solution spun dry on the wafer cannot be discharged from the bottom of the chamber, and the accumulated waste liquid flows back into the process chamber, thereby affecting the stability of the plating solution composition and the quality of the final product. Compared with the existing plating solution discharge system, the waste liquid discharge system provided by this invention uses components such as a pneumatic diaphragm valve, a siphon device, and a gas-liquid separator to attract waste liquid from the top of the deposition chamber through the siphon effect, and then perform gas-liquid separation and finally discharge them separately, effectively solving the problem of waste liquid flowing back into the deposition chamber.
[0028] (2) The waste liquid discharge method provided by this invention is simple and does not rely on complex processes or parameters. The performance of ECD equipment in the prior art cannot meet the needs of development. One problem is that during the deposition chamber process, the electroplating waste liquid spun dry on the wafer cannot be discharged from the bottom of the chamber, and the accumulated waste liquid flows back into the process chamber, affecting the stability of the plating solution composition and causing a series of quality problems. The waste liquid discharge method provided by this invention uses the aforementioned waste liquid discharge system, which utilizes a compressed gas storage device to introduce compressed gas into a siphon device; the waste liquid in the deposition chamber is drawn into the siphon device from the top of the deposition chamber; the compressed gas and the waste liquid in the deposition chamber enter a gas-liquid separation device for gas-liquid separation; the separated waste liquid in the deposition chamber is then discharged. This effectively solves the problem of ineffective waste liquid discharge.
[0029] (3) The electrochemical deposition system provided by the present invention includes the waste liquid discharge system, which can effectively discharge the electroplating waste liquid in the deposition chamber and improve the deposition effect.
[0030] (4) The electrochemical deposition method provided by the present invention, including the waste liquid discharge method, can avoid the problem of affecting the deposition effect due to the inability to effectively discharge the plating solution. Attached Figure Description
[0031] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0032] Figure 1 This is a schematic diagram of the waste liquid discharge system provided in an embodiment of the present invention.
[0033] Figure label:
[0034] 1-Compressed gas storage device, 2-Pressure reducing valve, 3-First pneumatic diaphragm valve, 4-Diaphragm check valve, 5-Siphon device, 6-Deposition chamber, 7-Second pneumatic diaphragm valve, 8-Flow detection device, 9-Gas-liquid separation device, 10-Waste liquid discharge pipeline, 11-Waste gas discharge pipeline. Detailed Implementation
[0035] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings and specific embodiments. However, those skilled in the art will understand that the embodiments described below are some embodiments of the present invention, but not all embodiments, and are only used to illustrate the present invention, and should not be regarded as limiting the scope of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall be followed. Where the manufacturers of reagents or instruments are not specified, they are all conventional products that can be purchased commercially.
[0036] The waste liquid discharge system provided by the present invention includes: a compressed gas storage device 1, a first pneumatic diaphragm valve 3, a siphon device 5, a second pneumatic diaphragm valve 7, a sedimentation chamber 6, and a gas-liquid separation device 9;
[0037] The compressed gas storage device 1, the first pneumatic diaphragm valve 3, the siphon device 5, the second pneumatic diaphragm valve 7, and the deposition chamber 6 are connected in sequence.
[0038] The gas-liquid separation device 9 is connected to the gas-liquid mixing outlet of the siphon device 5.
[0039] In the existing deposition chamber 6 process, the electroplating waste liquid spun dry on the wafer cannot be discharged from the bottom of the chamber. The accumulated waste liquid flows back into the process chamber, affecting the stability of the plating solution composition and the quality of the final product. Compared with the existing plating solution discharge system, the waste liquid discharge system provided by this invention uses components such as a pneumatic diaphragm valve, a siphon device 5, and a gas-liquid separator to draw waste liquid from the top of the deposition chamber 6 through the siphon effect, perform gas-liquid separation, and finally discharge them separately, effectively solving the problem of waste liquid flowing back into the deposition chamber 6.
[0040] The first pneumatic diaphragm valve 3 and the second pneumatic diaphragm valve 7 are used to control the opening and closing of pipelines in the waste liquid discharge system.
[0041] The siphon device 5 discharges the waste liquid from the sedimentation chamber 6 through the siphon effect.
[0042] The gas-liquid separation device 9 releases pressure through the tank structure, separating and discharging the gas and liquid.
[0043] Preferably, a flow detection device 8 is provided between the second pneumatic diaphragm valve 7 and the siphon device 5.
[0044] The flow detection device 8 can calculate the flow rate of the waste liquid discharged from the sedimentation chamber 6.
[0045] Preferably, the outlet of the compressed gas storage device 1 is equipped with a pressure reducing valve 2.
[0046] Pressure reducing valve 2 can reduce the pressure of compressed gas after it enters the pipeline of the waste liquid discharge system, thus ensuring the stability of the system.
[0047] Preferably, a diaphragm check valve 4 is provided between the first pneumatic diaphragm valve 3 and the siphon device 5.
[0048] The diaphragm check valve 4 can prevent compressed gas from flowing back in the opposite direction.
[0049] The waste liquid discharge system provided by the present invention connects the various components through flexible tubing and external threaded connectors.
[0050] The waste liquid discharge method provided by this invention, using the aforementioned waste liquid discharge system, includes the following steps:
[0051] Compressed gas storage device 1 introduces compressed gas into siphon device 5; waste liquid in sedimentation chamber 6 enters siphon device 5; the compressed gas and waste liquid in sedimentation chamber 6 enter gas-liquid separation device 9 for gas-liquid separation; the separated waste liquid in sedimentation chamber 6 is discharged.
[0052] The performance of ECD equipment in existing technologies cannot meet the requirements. One problem is that during the deposition chamber 6 process, the plating solution spun dry on the wafer cannot be discharged from the bottom of the chamber, and the accumulated waste liquid flows back into the process chamber, affecting the stability of the plating solution composition and causing a series of quality problems. The waste liquid discharge method provided by this invention uses the aforementioned waste liquid discharge system, which utilizes a compressed gas storage device 1 to introduce compressed gas into a siphon device 5; the waste liquid in the deposition chamber 6 is drawn into the siphon device 5 from the top of the deposition chamber 6; the compressed gas and the waste liquid in the deposition chamber 6 enter a gas-liquid separator 9 for gas-liquid separation; the separated waste liquid in the deposition chamber 6 is then discharged. This effectively solves the problem of ineffective waste liquid discharge.
[0053] Preferably, the first pneumatic diaphragm valve 3 is opened, and the compressed gas storage device 1 introduces compressed gas into the siphon device 5.
[0054] Preferably, the second pneumatic diaphragm valve 7 is opened, and the waste liquid in the deposition chamber 6 enters the siphon device 5.
[0055] Preferably, the flow rate of the waste liquid in the deposition chamber 6 is detected during the process of the waste liquid entering the siphon device 5.
[0056] The inlet of the compressed gas storage device 1 is connected to the plant's compressed gas supply. When the process requires the discharge of waste liquid from the sedimentation chamber 6, the first pneumatic diaphragm valve 3 is opened, allowing the compressed gas to enter the siphon device 5 via the pressure reducing valve 2, the first pneumatic diaphragm valve 3, and the diaphragm check valve 4. Simultaneously, the second pneumatic diaphragm valve 7 is opened, allowing high-speed compressed gas to pass through the siphon device 5. Due to the siphon effect, the waste liquid in the sedimentation chamber 6 enters the siphon device 5 via the second pneumatic diaphragm valve 7 and the flow detection device 8, and the compressed gas mixed with the waste liquid is discharged. After the mixed liquid enters the gas-liquid separator 9, the liquid is discharged through the bottom waste liquid discharge pipe 10, and the gas is discharged through the side wall waste gas discharge pipe 11.
[0057] The electrochemical deposition system provided by the present invention includes the aforementioned waste liquid discharge system.
[0058] The electrochemical deposition system described above can effectively discharge electroplating waste liquid from the deposition chamber 6, thereby improving the deposition effect.
[0059] The electrochemical deposition method provided by this invention includes the aforementioned waste liquid discharge method.
[0060] The electrochemical deposition method described above can avoid the problem of affecting the deposition effect due to the inability of the plating solution to be effectively drained.
[0061] The embodiments of the present invention will now be described in detail with reference to specific examples and comparative examples.
[0062] Example 1
[0063] The waste liquid discharge system provided in this embodiment, such as Figure 1 As shown, it includes:
[0064] Compressed gas storage device 1, first pneumatic diaphragm valve 3, siphon device 5, second pneumatic diaphragm valve 7, sedimentation chamber 6, and gas-liquid separation device 9;
[0065] The compressed gas storage device 1, the first pneumatic diaphragm valve 3, the siphon device 5, the second pneumatic diaphragm valve 7, and the deposition chamber 6 are connected in sequence.
[0066] The gas-liquid separation device 9 is connected to the gas-liquid mixing outlet of the siphon device 5;
[0067] A flow detection device 8 is provided between the second pneumatic diaphragm valve 7 and the siphon device 5;
[0068] The outlet of the compressed gas storage device 1 is equipped with a pressure reducing valve 2;
[0069] A diaphragm check valve 4 is provided between the first pneumatic diaphragm valve 3 and the siphon device 5.
[0070] Example 2
[0071] The waste liquid discharge method provided in this embodiment uses the waste liquid discharge system described in Embodiment 1 and includes the following steps:
[0072] (1) The air inlet of the compressed gas storage device 1 is connected to the compressed gas at the plant end;
[0073] (2) When the process requires the discharge of waste liquid from the sedimentation chamber 6, open the first pneumatic diaphragm valve 3;
[0074] (3) The compressed gas is passed through pressure reducing valve 2, first pneumatic diaphragm valve 3, and diaphragm check valve 4 into siphon device 5;
[0075] (4) Open the second pneumatic diaphragm valve 7, and high-speed compressed gas passes through the siphon device 5;
[0076] (5) Due to the siphon effect, the waste liquid in the sedimentation chamber 6 enters the siphon device 5 through the second pneumatic diaphragm valve 7 and the flow detection device 8;
[0077] (6) Compressed gas mixed with waste liquid is discharged;
[0078] (7) Compressed gas mixed with waste liquid enters gas-liquid separation device 9;
[0079] (8) Liquid is discharged through bottom waste liquid discharge pipe 10, and gas is discharged through side wall waste gas discharge pipe 11.
[0080] The waste liquid discharge method of this embodiment can discharge the waste liquid in the sedimentation chamber 6 from the top.
[0081] Comparative Example 1
[0082] The waste liquid discharge system provided in this comparative example includes:
[0083] Compressed gas storage device 1, pressure reducing valve 2, first pneumatic diaphragm valve 3, diaphragm check valve 4, gas-liquid separation device 9, flow detection device 8, second pneumatic diaphragm valve 7, and sedimentation chamber 6;
[0084] The compressed gas storage device 1, the pressure reducing valve 2, the first pneumatic diaphragm valve 3, the diaphragm check valve 4, the gas-liquid separation device 9, the flow detection device 8, the second pneumatic diaphragm valve 7, and the deposition chamber 6 are connected in sequence.
[0085] The wastewater discharge method using the above wastewater discharge system includes the following steps:
[0086] (1) The air inlet of the compressed gas storage device 1 is connected to the compressed gas at the plant end;
[0087] (2) When the process requires the discharge of waste liquid from the sedimentation chamber 6, open the first pneumatic diaphragm valve 3;
[0088] (3) The compressed gas passes through pressure reducing valve 2, first pneumatic diaphragm valve 3 and diaphragm check valve 4;
[0089] (4) Open the second pneumatic diaphragm valve 7.
[0090] Since the waste liquid discharge system provided in this comparative example does not have a siphon device 5, no siphon effect will occur when discharging waste liquid, and the waste liquid in the sedimentation chamber 6 cannot be discharged.
[0091] Although the present invention has been illustrated and described with specific embodiments, it should be understood that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; those skilled in the art should understand that modifications can be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein, without departing from the spirit and scope of the present invention; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention; therefore, this means that all such substitutions and modifications that fall within the scope of the present invention are included in the appended claims.
Claims
1. A waste liquid discharge system, characterized in that, include: Compressed gas storage device, first pneumatic diaphragm valve, siphon device, second pneumatic diaphragm valve, sedimentation chamber and gas-liquid separation device; The compressed gas storage device, the first pneumatic diaphragm valve, the siphon device, the second pneumatic diaphragm valve, and the deposition chamber are connected in sequence. The gas-liquid separation device is connected to the gas-liquid mixing outlet of the siphon device; The siphon device draws waste liquid from the upper part of the sedimentation chamber through the siphon effect; The outlet of the compressed gas storage device is equipped with a pressure reducing valve; A diaphragm check valve is provided between the first pneumatic diaphragm valve and the siphon device.
2. The waste liquid discharge system according to claim 1, characterized in that, A flow detection device is provided between the second pneumatic diaphragm valve and the siphon device.
3. A waste liquid discharge method, using the waste liquid discharge system according to claim 1 or 2, characterized in that, Includes the following steps: Compressed gas is introduced into the siphon device from the compressed gas storage device; waste liquid in the sedimentation chamber enters the siphon device; the compressed gas and the waste liquid in the sedimentation chamber enter the gas-liquid separation device for gas-liquid separation; the separated waste liquid in the sedimentation chamber is discharged.
4. The waste liquid discharge method according to claim 3, characterized in that, The first pneumatic diaphragm valve is opened, and the compressed gas storage device introduces compressed gas into the siphon device.
5. The waste liquid discharge method according to claim 3, characterized in that, The second pneumatic diaphragm valve is opened, and the waste liquid in the deposition chamber enters the siphon device.
6. The waste liquid discharge method according to claim 3, characterized in that, During the process of the waste liquid entering the siphon device from the deposition chamber, the flow rate of the waste liquid in the deposition chamber is detected.
7. An electrochemical deposition system, characterized in that, Includes the waste liquid discharge system as described in claim 1 or 2.
8. An electrochemical deposition method, characterized in that, The waste liquid discharge method includes any one of claims 3 to 6.