A high current sparkless on-off control device with functional safety for automotive applications

Abstract

The present application relates to the technical field of electronic switch, especially to a sparkless vehicle on-off control device with functional safety, comprising a controller, a MOS drive circuit, a MOS switch assembly, a relay drive circuit and a high-power magnetic latching relay module, which jointly constitute a new topology structure with high reliability and functional safety. The topology structure is applied to a large-current path to replace the traditional relay or other mechanical switch, and has the function of a recoverable large-current fuse. Before the opening of the high-power MOS power module group, the high-power magnetic latching relay is closed first, and is opened in a zero-current state, so that the generation of electric sparks can be eliminated, the explosion-proof performance of the system is enhanced, the EMC influence is reduced, and the reliability and safety of the system are greatly improved. At the same time, the function of the high-power magnetic latching relay is designed as a recoverable large-current fuse, which can greatly save the maintenance cost of the system.

Description

Technical Field

[0001] This invention relates to the field of electronic switch technology, and in particular to a functionally safe, high-current, spark-free vehicle-mounted on / off control device. Background Technology

[0002] Existing high-current switching technologies often rely on mechanical solutions such as relays or air switches to control the flow of high currents. Air switches with currents exceeding 300A are bulky and cannot be controlled electronically, requiring manual operation. While relay switching technology can be controlled electronically, these mechanical switches operate under high current conditions. At the moment of switching on and off, numerous electrical sparks are generated between the mechanical contacts. This can lead to the following hazards:

[0003] Firstly, in environments with high EMC (Electro Magnetic Compatibility) requirements, the high-order harmonic interference generated by electrical sparks has a significant impact on electronic equipment.

[0004] Secondly, electrical sparks can burn the contact surface, making it uneven and causing poor contact, which will greatly affect the service life of the relay. Moreover, it is difficult to determine the extent of relay deterioration due to burning in the circuit.

[0005] Thirdly, in environments with explosion-proof requirements, electrical sparks pose a significant risk.

[0006] Other electronic switches, lacking corresponding functional safety topology designs, often fail to meet the high requirements in areas such as high current switching, heat dissipation, and vehicle-mounted functional safety. Summary of the Invention

[0007] In order to overcome the defects of the prior art, the technical problem to be solved by the present invention is to solve the major defects of electric spark generation in the traditional high current on and off switching device using relay and mechanical switch circuit schemes, as well as the problems of ordinary electronic switches being easily damaged, generating excessive heat, and failing to meet the high requirements of vehicle functional safety under high current on and off.

[0008] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows:

[0009] A functionally safe high-current sparkless vehicle-mounted on / off control device includes a controller, a MOS drive circuit, a MOS switching assembly, a relay drive circuit, and a high-power magnetic latching relay module.

[0010] The controller's input terminal is electrically connected to an external switching signal. The controller's output terminal is electrically connected to the input terminals of both the MOS drive circuit and the relay drive circuit. The output terminal of the MOS drive circuit is electrically connected to the control terminal of the MOS switch assembly, which is composed of multiple MOS transistors connected in parallel. The output terminal of the relay drive circuit is electrically connected to the control terminal of the high-power magnetic latching relay module. The MOS switch assembly and the MOS drive circuit form a MOS power module. Two or more MOS power modules are connected in parallel to form a redundant power module group. This redundant power module group is connected in series with a controllable high-power magnetic latching relay module to form a novel, highly reliable topology with functional safety.

[0011] Furthermore, the MOS driving circuit includes a driving chip U4, the third pin of the driving chip U4 is electrically connected to the input terminal of the controller, the fourth pin of the driving chip U4 is electrically connected to the output terminal of the controller; the gates of multiple MOS transistors are respectively electrically connected to the fifth pin of the driving chip U4, the drains of multiple MOS transistors are electrically connected to each other and to the sixth pin of the driving chip U4, and the sources of multiple MOS transistors are electrically connected to each other.

[0012] Furthermore, the high-power magnetic latching relay module includes a high-power magnetic latching relay K1, the first pin of the high-power magnetic latching relay K1 is electrically connected to the positive terminal of the power supply, the fourth pin of the high-power magnetic latching relay K1 is electrically connected to the source terminals of the plurality of MOS transistors, and the fifth pin of the high-power magnetic latching relay K1 is electrically connected to the load.

[0013] Furthermore, the relay driving circuit includes a relay closing driving circuit and a relay opening driving circuit;

[0014] The relay disconnection drive circuit includes transistor Q5, resistor R153, resistor R156, diode D10, and transient suppression diode ZD4;

[0015] One end of resistor R153 is electrically connected to the output terminal of the controller, and the other end of resistor R153 is electrically connected to the gate of transistor Q5. One end of resistor R156 is electrically connected to both the output terminal of the controller and the gate of transistor Q5, and the other end of resistor R156 is electrically connected to the source of transistor Q5 and grounded. The drain of transistor Q5 is electrically connected to the negative terminal of diode D10. The positive terminal of diode D10 is electrically connected to one end of transient suppression diode ZD4 and the second pin of high-power magnetic latching relay K1, and the other end of transient suppression diode ZD4 is grounded.

[0016] The relay closing drive circuit includes transistor Q7, resistor R163, resistor R164, diode D12, and transient suppression diode ZD8;

[0017] One end of resistor R163 is electrically connected to the output terminal of the controller, and the other end of resistor R163 is electrically connected to the gate of transistor Q7. One end of resistor R164 is electrically connected to both the output terminal of the controller and the gate of transistor Q7, and the other end of resistor R164 is electrically connected to the source of transistor Q7 and grounded. The drain of transistor Q7 is electrically connected to the negative terminal of diode D12. The positive terminal of diode D12 is electrically connected to one end of transient suppression diode ZD8 and the third pin of high-power magnetic latching relay K1, and the other end of transient suppression diode ZD8 is grounded.

[0018] Furthermore, it also includes resistor R91 and capacitor C96;

[0019] The eighth pin of the driver chip U4 is electrically connected to one end of the resistor R91 and one end of the capacitor C96, and the eighth pin of the driver chip U4 serves as one end of the two ends connected in parallel.

[0020] The sixth pin of the driver chip U4 is electrically connected to the other end of resistor R91, the other end of capacitor C96, and the drain of multiple MOS transistors.

[0021] Furthermore, the gate of each MOSFET is electrically connected to the fifth pin of the driver chip U4 through a resistor.

[0022] Furthermore, it also includes resistor R94 and capacitor C102;

[0023] The resistor R94 and capacitor C102 are connected in series, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

[0024] Furthermore, it also includes transient suppression diodes ZD5 and ZD6;

[0025] The transient suppression diodes ZD5 and ZD6 are connected in parallel, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

[0026] Furthermore, it also includes capacitor C100;

[0027] The second pin of the driver chip U4 is electrically connected to the first pin of the driver chip U4 through capacitor C100, and the first pin of the driver chip U4 is grounded.

[0028] The beneficial effects of this invention are as follows: It replaces the traditional method of using relays, mechanical switches, or other electronic switches alone by applying a parallel MOS power module group and a high-power magnetic latching relay in a series connection to a high-current path, thus constructing a functionally safe topology with a significantly improved safety factor. The MOS switching component in the designed power module is composed of multiple MOS transistors connected in parallel to handle high currents. The use of MOS transistors completely eliminates electrical sparks, increases system lifespan, enhances explosion-proof performance, and reduces EMC impact. The parallel connection of multiple power modules further expands the circuit's current carrying capacity, increases heat dissipation area, increases device redundancy, and enhances fault tolerance. The designed relay is a high-power magnetic latching relay, which can maintain its state even when the control voltage is off, improving system reliability. With the MOS power module group and the high-power magnetic latching relay connected in series, the high-power magnetic latching relay is closed before the MOS power module is turned on, at which point no current flows through the high-power magnetic latching relay, resulting in no electrical sparks. During normal operation, only the MOS power module controls the switching of high currents, while the high-power magnetic latching relay remains normally closed. The system only sends a drive signal to trigger the high-power magnetic latching relay to disconnect when it determines that the MOS power module is damaged. This combination fully leverages the advantages of electronic switches, avoids the disadvantage of high-power relays generating electrical sparks under high current conditions, and ensures that the relay can still normally shut down the circuit when the MOS power module fails, providing a final safety guarantee and greatly improving the reliability and safety of the entire system. Attached Figure Description

[0029] Figure 1 The figure shown is a system block diagram of a high-current sparkless vehicle-mounted on / off control device with functional safety.

[0030] Figure 2 The diagram shows the circuit connection of the MOS group, MOS drive circuit, and high-power magnetic latching relay.

[0031] Figure 3 The diagram shown is a connection diagram of a relay drive circuit.

[0032] Label Explanation:

[0033] 100. A set of MOS switching components; 101. Another set of MOS switching components; 102. A set of MOS driving circuits; 103. Another set of MOS driving circuits; 104. Relay closing driving circuit; 105. Relay opening driving circuit. Detailed Implementation

[0034] To explain in detail the technical content, objectives, and effects of the present invention, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0035] Please refer to Figure 1 , Figure 2 and Figure 3 As shown, the present invention provides a functionally safe high-current sparkless vehicle on / off control device, comprising a controller, a MOS drive circuit, a MOS switch assembly, a relay drive circuit, and a high-power magnetic latching relay module.

[0036] The controller's input terminal is electrically connected to an external switching signal. The controller's output terminal is electrically connected to the input terminals of both the MOS drive circuit and the relay drive circuit. The output terminal of the MOS drive circuit is electrically connected to the control terminal of the MOS switch assembly, which is composed of multiple MOS transistors connected in parallel. The output terminal of the relay drive circuit is electrically connected to the control terminal of the high-power magnetic latching relay module. The MOS switch assembly and the MOS drive circuit form a MOS power module. Two or more MOS power modules are connected in parallel to form a redundant power module group. This redundant power module group is connected in series with a controllable high-power magnetic latching relay module to form a novel, highly reliable topology with functional safety.

[0037] As described above, applying a parallel MOS power module group and a high-power magnetic latching relay in series to a high-current path replaces the traditional approach of using relays, mechanical switches, or other electronic switches alone, creating a functionally safe topology with a significantly improved safety factor. The MOS switching components in the designed power modules consist of multiple MOS transistors connected in parallel to handle high currents. The use of MOS transistors completely eliminates electrical sparks, increases system lifespan, enhances explosion-proof performance, and reduces EMC impact. The parallel connection of multiple power modules further expands the circuit's current carrying capacity, increases heat dissipation area, increases device redundancy, and enhances fault tolerance. The designed relay is a high-power magnetic latching relay, which can maintain its state even when the control voltage is off, improving system reliability. With the MOS power module group and the high-power magnetic latching relay connected in series, the high-power magnetic latching relay is closed before the MOS power module is turned on, at which point no current flows through it, resulting in no electrical sparks. During normal operation, only the MOS power module controls the high-current switching, while the high-power magnetic latching relay remains normally closed. The system only sends a drive signal to trigger the high-power magnetic latching relay to disconnect when it determines that the MOS power module is damaged. This combination fully leverages the advantages of electronic switches, avoids the disadvantage of high-power relays generating electrical sparks under high current conditions, and ensures that the relay can still normally shut down the circuit when the MOS power module fails, providing a final safety guarantee and greatly improving the reliability and safety of the entire system.

[0038] Furthermore, the MOS driving circuit includes a driving chip U4, the third pin of the driving chip U4 is electrically connected to the input terminal of the controller, the fourth pin of the driving chip U4 is electrically connected to the output terminal of the controller; the gates of multiple MOS transistors are respectively electrically connected to the fifth pin of the driving chip U4, the drains of multiple MOS transistors are electrically connected to each other and to the sixth pin of the driving chip U4, and the sources of multiple MOS transistors are electrically connected to each other.

[0039] Furthermore, the high-power magnetic latching relay module includes a high-power magnetic latching relay K1, the first pin of the high-power magnetic latching relay K1 is electrically connected to the positive terminal of the power supply, the fourth pin of the high-power magnetic latching relay K1 is electrically connected to the source terminals of the plurality of MOS transistors, and the fifth pin of the high-power magnetic latching relay K1 is electrically connected to the load.

[0040] As described above, the series-connected high-power magnetic latching relay K1 can shut off the circuit in the event of MOS power bank failure, thus improving system reliability. Furthermore, the designed high-power magnetic latching relay K1 is a magnetic latching relay, which can maintain its state even when the control voltage is de-energized, further enhancing system reliability.

[0041] Furthermore, the relay driving circuit includes a relay closing driving circuit and a relay opening driving circuit;

[0042] The relay disconnection drive circuit includes transistor Q5, resistor R153, resistor R156, diode D10, and transient suppression diode ZD4;

[0043] One end of resistor R153 is electrically connected to the output terminal of the controller, and the other end of resistor R153 is electrically connected to the gate of transistor Q5. One end of resistor R156 is electrically connected to both the output terminal of the controller and the gate of transistor Q5, and the other end of resistor R156 is electrically connected to the source of transistor Q5 and grounded. The drain of transistor Q5 is electrically connected to the negative terminal of diode D10. The positive terminal of diode D10 is electrically connected to one end of transient suppression diode ZD4 and the second pin of high-power magnetic latching relay K1, and the other end of transient suppression diode ZD4 is grounded.

[0044] The relay closing drive circuit includes transistor Q7, resistor R163, resistor R164, diode D12, and transient suppression diode ZD8;

[0045] One end of resistor R163 is electrically connected to the output terminal of the controller, and the other end of resistor R163 is electrically connected to the gate of transistor Q7. One end of resistor R164 is electrically connected to both the output terminal of the controller and the gate of transistor Q7, and the other end of resistor R164 is electrically connected to the source of transistor Q7 and grounded. The drain of transistor Q7 is electrically connected to the negative terminal of diode D12. The positive terminal of diode D12 is electrically connected to one end of transient suppression diode ZD8 and the third pin of high-power magnetic latching relay K1, and the other end of transient suppression diode ZD8 is grounded.

[0046] As described above, the drive circuit composed of transistors Q5 and Q7 amplifies the controller signal to control the closing and opening of the high-power holding relay K1. By connecting the control lines of the transistors to the analog signal sampling interface of the controller, the controller can monitor the control signals of transistors Q5 and Q7 in real time.

[0047] Furthermore, it also includes resistor R91 and capacitor C96;

[0048] The eighth pin of the driver chip U4 is electrically connected to one end of the resistor R91 and one end of the capacitor C96, and the eighth pin of the driver chip U4 serves as one end of the two ends connected in parallel.

[0049] The sixth pin of the driver chip U4 is electrically connected to the other end of resistor R91, the other end of capacitor C96, and the drain of multiple MOS transistors.

[0050] As described above, the RC bypass consisting of resistor R91 and capacitor C96 can effectively remove spikes and glitches, thereby achieving normal current sampling.

[0051] Furthermore, the gate of each MOSFET is electrically connected to the fifth pin of the driver chip U4 through a resistor.

[0052] As described above, the fifth pin of chip U4 outputs a level signal to the gate of the MOSFET, thereby controlling the on / off state of the MOSFET assembly.

[0053] Furthermore, it also includes resistor R94 and capacitor C102;

[0054] The resistor R94 and capacitor C102 are connected in series, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

[0055] As described above, the bypass consisting of resistor R94 and capacitor C102 can absorb the leakage inductance-generated pulse oscillation voltage, thus having a buffering effect.

[0056] Furthermore, it also includes transient suppression diodes ZD5 and ZD6;

[0057] The transient suppression diodes ZD5 and ZD6 are connected in parallel, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

[0058] As described above, transient suppression diodes ZD5 and ZD6 together form a suppression circuit that can effectively suppress over-voltage surges and high-frequency pulse interference on the circuit.

[0059] Furthermore, it also includes capacitor C100;

[0060] The second pin of the driver chip U4 is electrically connected to the first pin of the driver chip U4 through capacitor C100, and the first pin of the driver chip U4 is grounded.

[0061] As described above, the second pin of U4 is used as a timer signal input, which is not used in this invention. Leaving it unused will cause interference, so it needs to be grounded.

[0062] Please refer to Figure 1 , Figure 2 and Figure 3 As shown, Embodiment 1 of the present invention is as follows:

[0063] The present invention provides a functionally safe high-current sparkless vehicle on / off control device, comprising a controller, a MOS drive circuit, a MOS switch assembly, a relay drive circuit, and a high-power magnetic latching relay module;

[0064] The controller's input terminal is electrically connected to an external switching signal. The controller's output terminal is electrically connected to the input terminals of both the MOS drive circuit and the relay drive circuit. The output terminal of the MOS drive circuit is electrically connected to the control terminal of the MOS switch assembly, which is composed of multiple MOS transistors connected in parallel. The output terminal of the relay drive circuit is electrically connected to the control terminal of the high-power magnetic latching relay module. The MOS switch assembly and the MOS drive circuit form a MOS power module. Two or more MOS power modules are connected in parallel to form a redundant power module group. This redundant power module group is connected in series with a controllable high-power magnetic latching relay module to form a novel, highly reliable topology with functional safety.

[0065] In the solution, the controller model is SAK-TC212L-8F133.

[0066] In this embodiment, two sets of MOS driving circuits and two sets of MOS switching components are provided;

[0067] A set of MOS driving circuits 102 includes a driving chip U4, capacitors C96 and C100, and resistor R91; a set of MOS switching components 100 includes MOS field-effect transistors Q12, Q13, Q14, and Q15, transient suppression diodes ZD5 and ZD6, capacitor C102, resistors R94, R95, R102, R106, and R110.

[0068] The third pin of the driver chip U4 is electrically connected to the input terminal of the controller, and the fourth pin of the driver chip U4 is electrically connected to the output terminal of the controller. The gates of multiple MOSFETs are respectively electrically connected to the fifth pin of the driver chip U4, the drains of the multiple MOSFETs are electrically connected to each other and to the sixth pin of the driver chip U4, and the sources of the multiple MOSFETs are electrically connected to each other. The high-power magnetic latching relay module includes a high-power magnetic latching relay K1. The first pin of the high-power magnetic latching relay K1 is electrically connected to the positive terminal of the power supply, the fourth pin of the high-power magnetic latching relay K1 is electrically connected to the sources of the multiple MOSFETs, and the fifth pin of the high-power magnetic latching relay K1 is electrically connected to the load.

[0069] Another set of MOS driving circuits 103 includes a driving chip U5, capacitors C97 and C120, and resistor R92; another set of MOS switching components 101 includes MOS field-effect transistors Q16, Q17, Q18, and Q19, transient suppression diodes ZD7 and ZD9, capacitor C103, resistors R96, R99, R103, R107, and R111.

[0070] The other set of MOS drive circuits is connected to the high-power magnetic latching relay K1 in the same manner.

[0071] The relay driving circuit includes a relay closing driving circuit 104 and a relay opening driving circuit 105.

[0072] The relay disconnection drive circuit 105 includes transistor Q5, resistor R153, resistor R156, diode D10, and transient suppression diode ZD4.

[0073] One end of resistor R153 is electrically connected to the output terminal of the controller (specifically, pin 17 of the SAK-TC212L-8F133 chip), and the other end of resistor R153 is electrically connected to the gate of transistor Q5. One end of resistor R156 is electrically connected to both the output terminal of the controller (specifically, pin 18 of the SAK-TC212L-8F133 chip) and the gate of transistor Q5. The other end of resistor R156 is electrically connected to the source of transistor Q5 and grounded. The drain of transistor Q5 is electrically connected to the cathode of diode D10. The anode of diode D10 is electrically connected to one end of transient suppression diode ZD4 and pin 2 of high-power magnetic latching relay K1. The other end of transient suppression diode ZD4 is grounded.

[0074] The relay closing drive circuit 104 includes transistor Q7, resistor R163, resistor R164, diode D12, and transient suppression diode ZD8;

[0075] One end of resistor R163 is electrically connected to the output terminal of the controller (specifically, the nineteenth pin of the SAK-TC212L-8F133 chip), and the other end of resistor R163 is electrically connected to the gate of transistor Q7. One end of resistor R164 is electrically connected to both the output terminal of the controller (specifically, the twentieth pin of the SAK-TC212L-8F133 chip) and the gate of transistor Q7. The other end of resistor R164 is electrically connected to the source of transistor Q7 and grounded. The drain of transistor Q7 is electrically connected to the negative terminal of diode D12. The positive terminal of diode D12 is electrically connected to one end of transient suppression diode ZD8 and the third pin of high-power magnetic latching relay K1. The other end of transient suppression diode ZD8 is grounded.

[0076] The eighth pin of the driver chip U4 is electrically connected to one end of the resistor R91 and one end of the capacitor C96, and the eighth pin of the driver chip U4 serves as one end of the two ends connected in parallel.

[0077] The sixth pin of the driver chip U4 is electrically connected to the other end of resistor R91, the other end of capacitor C96, and the drain of multiple MOS transistors.

[0078] The gate of each MOSFET is electrically connected to the fifth pin of the driver chip U4 through a resistor.

[0079] The resistor R94 and capacitor C102 are connected in series, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

[0080] The transient suppression diodes ZD5 and ZD6 are connected in parallel, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

[0081] The second pin of the driver chip U4 is electrically connected to the first pin of the driver chip U4 through capacitor C100, and the first pin of the driver chip U4 is grounded.

[0082] In this embodiment, the driving chip U4 and driving chip U5 are both LT1910, the capacitors C96 and C97 are both 100nF, the capacitors C100 and C120 are both 10uF, the capacitors C102 and C103 are both 4.7nF, the MOS field-effect transistors Q12 to Q19 are all IAUT300N08S5N012, and the transient suppression diodes ZD4 to ZD9 are all SMBJ36CA.

[0083] The resistance values ​​of resistors R91 and R92 are both 0.001Ω, the resistance values ​​of resistors R94 and R96 are both 5.1Ω, the resistance values ​​of resistors R95 and R99 are both 22Ω, the resistance values ​​of resistors R102 and R103 are both 22Ω, the resistance values ​​of resistors R106 and R107 are both 22Ω, and the resistance values ​​of resistors R110 and R111 are both 22Ω.

[0084] The transistor Q5 is a BTS3046SDR, the transistor Q7 is a BTS3046SDR, the diode D10 is an ES3D, the diode D12 is an ES3D, the resistor R153 has a resistance of 2.2KΩ, the resistor R156 has a resistance of 10KΩ, the resistor R163 has a resistance of 2.2KΩ, and the resistor R164 has a resistance of 10KΩ.

[0085] The working principle of the functionally safe high-current spark-free vehicle-mounted on / off control device provided by this invention is as follows:

[0086] When a high-current path needs to be closed, the system controller first outputs a drive signal to transistor Q7. Transistor Q7 controls the high-power magnetic latching relay K1 to close, at which point there is no current in the path and no electrical spark. Then, the system controller outputs a drive signal to driver chip U4. Driver chip U4 outputs an electrical signal to the gates of all MOSFETs in the same group. When the gate voltage of a MOSFET reaches a certain level, the MOSFET switch turns on, and the entire high-current path is open, allowing a large current to flow. When the high-current path needs to be opened, the system controller outputs a drive signal to driver chip U4. Driver chip U4 outputs an electrical signal to the gates of all MOSFETs in the same group. When the gate voltage of a MOSFET drops to a certain level, the MOSFET switch turns off, and the high-current path is opened. When a MOSFET in the same group fails, MOSFET driver chip U4 sends a fault alarm signal to the system. The system, based on the alarm signal from the driver chip and the system's current and voltage sampling information, outputs a drive signal to transistor Q5 through preset logic. Transistor Q5 controls the high-power magnetic latching relay K1 to open. Another function is that even if the MOSFET is not damaged, the system will quickly shut off the high-power magnetic latching relay when an undue large current is detected in the system current. This technical solution can be extended to solutions with an unlimited number of MOSFET power modules connected in parallel, or MOSFET power modules and high-power magnetic latching relays connected in series in different sequences.

[0087] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent modifications made based on the content of the present invention specification and drawings, or direct or indirect applications in related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A functionally safe, high-current, spark-free vehicle-mounted on / off control device, characterized in that, This includes a controller, a MOS drive circuit, a MOS switching assembly, a relay drive circuit, and a high-power magnetic latching relay module; The controller's input terminal is electrically connected to an external switching signal. Multiple output terminals of the controller are electrically connected to the input terminals of a MOS drive circuit and a relay drive circuit, respectively. The output terminal of the MOS drive circuit is electrically connected to the control terminal of a MOS switch assembly, which is composed of multiple MOS transistors connected in parallel. The output terminal of the relay drive circuit is electrically connected to the control terminal of a high-power magnetic latching relay module. The MOS switch assembly and the MOS drive circuit form a MOS power module. Two or more MOS power modules are connected in parallel to form a redundant power module group. The redundant power module group is connected in series with a controllable high-power magnetic latching relay module. The high-power magnetic latching relay module includes a high-power magnetic latching relay K1. The first pin of the high-power magnetic latching relay K1 is electrically connected to the positive terminal of the power supply, the fourth pin of the high-power magnetic latching relay K1 is electrically connected to the source of the plurality of MOS transistors, and the fifth pin of the high-power magnetic latching relay K1 is electrically connected to the load. The relay driving circuit includes a relay closing driving circuit and a relay opening driving circuit; The relay disconnection drive circuit includes transistor Q5, resistor R153, resistor R156, diode D10, and transient suppression diode ZD4; One end of resistor R153 is electrically connected to the first output terminal of the controller, and the other end of resistor R153 is electrically connected to the gate of transistor Q5. One end of resistor R156 is electrically connected to the gate of transistor Q5, and the other end of resistor R156 is electrically connected to the source of transistor Q5 and grounded. The drain of transistor Q5 is electrically connected to the negative terminal of diode D10. The positive terminal of diode D10 is electrically connected to one end of transient suppression diode ZD4 and the second pin of high-power magnetic latching relay K1, respectively. The other end of transient suppression diode ZD4 is grounded. The relay closing drive circuit includes transistor Q7, resistor R163, resistor R164, diode D12, and transient suppression diode ZD8; One end of resistor R163 is electrically connected to the second output terminal of the controller, and the other end of resistor R163 is electrically connected to the gate of transistor Q7. One end of resistor R164 is electrically connected to the gate of transistor Q7, and the other end of resistor R164 is electrically connected to the source of transistor Q7 and grounded. The drain of transistor Q7 is electrically connected to the negative terminal of diode D12. The positive terminal of diode D12 is electrically connected to one end of transient suppression diode ZD8 and the third pin of high-power magnetic latching relay K1, respectively. The other end of transient suppression diode ZD8 is grounded.

2. The functionally safe high-current spark-free vehicle-mounted on / off control device according to claim 1, characterized in that, The MOS driving circuit includes a driving chip U4. The third pin of the driving chip U4 is electrically connected to the third output terminal of the controller, and the fourth pin of the driving chip U4 is electrically connected to the fourth output terminal of the controller. The gates of multiple MOS transistors are respectively electrically connected to the fifth pin of the driving chip U4, the drains of multiple MOS transistors are electrically connected to each other and to the sixth pin of the driving chip U4, and the sources of multiple MOS transistors are electrically connected to each other. The high-current sparkless vehicle-mounted on / off control device also includes a capacitor C100. The second pin of the driver chip U4 is electrically connected to the first pin of the driver chip U4 through capacitor C100, and the first pin of the driver chip U4 is grounded; The high-current sparkless vehicle-mounted on / off control device also includes a resistor R91 and a capacitor C96. The eighth pin of the driver chip U4 is electrically connected to one end of the resistor R91 and one end of the capacitor C96, and the eighth pin of the driver chip U4 is connected to one end of the parallel connection of the resistor R91 and the capacitor C96. The sixth pin of the driver chip U4 is electrically connected to the other end of the parallel connection of resistor R91 and capacitor C96, as well as the drain of multiple MOS transistors. The gate of each MOSFET is electrically connected to the fifth pin of the driver chip U4 through a resistor; The seventh pin of the driver chip U4 is left floating.

3. The high-current spark-free vehicle-mounted on / off control device with functional safety according to claim 1, characterized in that, It also includes resistor R94 and capacitor C102; The resistor R94 and capacitor C102 are connected in series, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

4. A functionally safe high-current spark-free vehicle-mounted on / off control device according to claim 1, characterized in that, It also includes transient suppression diodes ZD5 and ZD6; The transient suppression diodes ZD5 and ZD6 are connected in parallel, and their two ends are electrically connected to the source and drain of multiple MOS transistors, respectively.

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