A gallium nitride-based terahertz detector array unit, detector, and fabrication method

Abstract

This invention relates to a gallium nitride-based terahertz detector array, a detector, and a fabrication method. The array unit includes a terahertz antenna, a detection unit, and a power amplifier. The detection unit includes at least one first transistor, and the power amplifier includes at least one second transistor. Both the at least one first transistor and the at least one second transistor are gallium nitride-based high electron mobility transistors and are integrated on the same preform. The terahertz antenna is connected to the input terminal of the detection unit in at least one of the first transistors, and the output terminal of the detection unit in at least one of the first transistors is connected to the input terminal of the power amplifier in at least one of the second transistors. The integration of the transistors in the detection unit and the power amplifier on the same substrate effectively improves detector pixel uniformity and integration, reduces packaging and processing costs, and enhances the high-temperature operating capability of the entire detector array unit.

Description

Technical Field

[0001] This invention belongs to the field of terahertz detection technology, specifically relating to a gallium nitride-based terahertz detector array unit, detector, and fabrication method. Background Technology

[0002] Terahertz waves are electromagnetic waves with a frequency range of 0.1 THz to 10 THz and a wavelength range of 0.03 mm to 3 mm. In the electromagnetic spectrum, terahertz waves lie between millimeter waves and infrared light, at the intersection of electronics and photonics. For a long time, due to the lack of effective methods for generating and detecting terahertz signals, our understanding of this waveband was very limited; therefore, terahertz waves were also known as the "terahertz blank" in the electromagnetic spectrum. In recent years, due to technological advancements, terahertz waves have become a hot topic in scientific research, with broad application prospects in fields such as public safety, biomedicine, non-destructive testing, and data communication.

[0003] Terahertz detection technology is an important branch of terahertz technology. Compared to infrared and visible light detection, terahertz waves have stronger penetrating power, capable of penetrating smoke and dust, and possess greater environmental adaptability. Compared to microwave detection, terahertz detection has advantages such as higher imaging resolution and higher frame rate. In terms of safety, the electron energy of terahertz waves is lower than that of X-rays; the photon energy at a frequency of 1 THz is only 4 meV, which will not cause ionizing damage to living organisms.

[0004] Terahertz focal plane array imaging is a detection technology that uses terahertz waves as carrier waves and a focal plane array as its core. Existing terahertz detectors require additional power amplifiers to amplify their output signals. The detector's packaging module and the power amplifier's packaging module are connected by leads, resulting in a large size, high cost, and poor design flexibility for the entire terahertz detector. Summary of the Invention

[0005] To address the aforementioned problems in the prior art, this invention provides a gallium nitride-based terahertz detector array unit, a detector, and a fabrication method. The technical problem to be solved by this invention is achieved through the following technical solution:

[0006] This invention provides a highly integrated gallium nitride-based terahertz detector array unit, comprising: a terahertz antenna, a detection unit, and a power amplifier, wherein...

[0007] The detection unit includes at least one first transistor, and the power amplifier includes at least one second transistor. Both the at least one first transistor and the at least one second transistor are gallium nitride-based high electron mobility transistors and are integrated on the same preform.

[0008] The terahertz antenna is connected to the input terminal of the detector unit in at least one of the first transistors, and the output terminal of the detector unit in at least one of the first transistors is connected to the input terminal of the power amplifier in at least one of the second transistors.

[0009] In one embodiment of the present invention, the preform includes: a substrate, a nucleation layer, a transition layer, a buffer layer, a channel layer, and a barrier layer, wherein,

[0010] The substrate, the nucleation layer, the transition layer, the buffer layer, the channel layer, and the barrier layer are stacked sequentially.

[0011] Each of the isolation trenches extends through the barrier layer and the channel layer and is located within the buffer layer.

[0012] In one embodiment of the present invention, the substrate is made of one or more of high-resistivity silicon, silicon carbide, sapphire, diamond, and aluminum nitride, and has a thickness of 100μm-1500μm;

[0013] The nucleation layer is made of aluminum nitride and has a thickness of 50-300 nm.

[0014] The transition layer is made of one or more of aluminum gallium nitride, aluminum nitride / gallium nitride superlattice structures, and has a thickness of 100-1000 nm.

[0015] The buffer layer is made of one or more of gallium nitride and aluminum gallium nitride, and has a thickness of 100-5000 nm.

[0016] The channel layer is made of gallium nitride and has a thickness of 50-500 nm.

[0017] The barrier layer is one or more of aluminum gallium nitride, indium aluminum nitride, and aluminum nitride, with a thickness of 2-40 nm.

[0018] In one embodiment of the present invention, the preform further includes an isolation layer located between the channel layer and the barrier layer.

[0019] In one embodiment of the present invention, the preform further includes a cap layer located on the upper surface of the barrier layer.

[0020] In one embodiment of the present invention, the preform is provided with at least one isolation groove, at least two sets of electrodes, and leads, wherein,

[0021] Each of the isolation trenches extends through the barrier layer and the channel layer, and is located within the buffer layer;

[0022] Each set of electrodes is located on the barrier layer and an isolation trench is provided between two adjacent sets of electrodes. Each set of electrodes includes a source electrode, a drain electrode and a gate electrode, with the gate electrode located between the source electrode and the drain electrode.

[0023] The source electrode and gate electrode of any one of the at least two sets of electrodes form the input terminal of the detector unit, the drain electrode of any one set of electrodes forms the output terminal of the detector unit, and the gate electrode of any of the remaining sets of electrodes forms the input terminal of the power amplifier.

[0024] The output terminal of the detector unit and the input terminal of the power amplifier are connected by the lead wire; the terahertz antenna is provided on the input terminal of the detector unit.

[0025] In one embodiment of the present invention, the preform is provided with an isolation groove, a first source electrode, a first gate electrode, a first drain electrode, a second source electrode, a second gate electrode, a second drain electrode, and leads, wherein,

[0026] The isolation trench penetrates the barrier layer and the channel layer, and is located in the buffer layer;

[0027] The first source electrode, the first gate electrode, and the first drain electrode are located on the barrier layer and on one side of the isolation trench. The first gate electrode is located between the first source electrode and the first drain electrode. The first source electrode and the first gate electrode form the input terminal of the detector unit, and the first drain electrode forms the output terminal of the detector unit.

[0028] The second source electrode, the second gate electrode, and the second drain electrode are located on the barrier layer and on the other side of the isolation trench. The second gate electrode is located between the second source electrode and the second drain electrode, and the second gate electrode forms the input terminal of the power amplifier.

[0029] The first drain electrode is connected to the second gate electrode via the lead.

[0030] In one embodiment of the present invention, the terahertz antenna is disposed on the input end of the detector unit and integrated with the detector unit and the power amplifier.

[0031] Another embodiment of the present invention provides a highly integrated gallium nitride-based terahertz detector, comprising a plurality of sub-units arranged in an array, wherein each sub-unit employs a highly integrated gallium nitride-based terahertz detector array unit as described in the above embodiment.

[0032] Another embodiment of the present invention provides a method for fabricating a highly integrated gallium nitride-based terahertz detector array unit, comprising the steps of:

[0033] S1. A core layer, a transition layer, a buffer layer, a channel layer, and a barrier layer are sequentially grown on the substrate.

[0034] S2. Electrical isolation of the device is fabricated in the barrier layer, the channel layer and the buffer layer, forming at least one isolation trench that penetrates the barrier layer and the channel layer and is located in the buffer layer;

[0035] S3. At least two sets of source electrodes and drain electrodes are prepared on the barrier layer, such that each set of source electrodes and drain electrodes is located in the electrical region between the at least one isolation trench;

[0036] S4. A gate electrode is prepared between the source electrode and the drain electrode of each group to form at least two groups of electrodes. The source electrode and the gate electrode of any one group of electrodes form the input terminal of the detector unit, the drain electrode of any one group of electrodes forms the output terminal of the detector unit, and the gate electrode of any other group of electrodes forms the input terminal of the power amplifier.

[0037] S5. Prepare a passivation layer on the device surface so that the passivation layer covers the device surface;

[0038] S6. Prepare leads such that the leads connect the output terminal of the detector unit and the input terminal of the power amplifier, and prepare a terahertz antenna on the input terminal of the detector unit.

[0039] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0040] The transistors of the detector unit and the power amplifier of the terahertz detector array unit of the present invention are integrated on the same substrate, which can effectively improve the uniformity and integration of detector pixels, reduce packaging and processing costs, improve the high-temperature operating capability of the entire detector array unit, and also facilitate the realization of high-density terahertz detector focal plane arrays. Attached Figure Description

[0041] Figure 1 This is a schematic diagram of a highly integrated gallium nitride-based terahertz detector array unit provided in an embodiment of the present invention;

[0042] Figure 2 A schematic diagram of the circuit structure of a terahertz detector array unit provided in an embodiment of the present invention;

[0043] Figure 3 This is a schematic cross-sectional view of an array unit provided in an embodiment of the present invention;

[0044] Figure 4 A cross-sectional structural schematic diagram of another array unit provided in an embodiment of the present invention;

[0045] Figure 5A schematic diagram of a highly integrated gallium nitride-based terahertz detector is provided for an embodiment of the present invention;

[0046] Figure 6 A schematic flowchart illustrating a method for fabricating a highly integrated gallium nitride-based terahertz detector array unit according to an embodiment of the present invention;

[0047] Figures 7a-7k This is a schematic diagram illustrating the fabrication process of a highly integrated gallium nitride-based terahertz detector array unit provided in an embodiment of the present invention. Detailed Implementation

[0048] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0049] Example 1

[0050] Please see Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of a highly integrated gallium nitride-based terahertz detector array unit provided in an embodiment of the present invention. Figure 2 This is a schematic diagram of the circuit structure of a terahertz detector array unit provided in an embodiment of the present invention.

[0051] The terahertz detector array unit includes a terahertz antenna 1, a detector unit 2, and a power amplifier 3. The detector unit 2 includes at least one first transistor, and the power amplifier 3 includes at least one second transistor. Both the at least one first transistor and the at least one second transistor are gallium nitride-based high electron mobility transistors and are integrated on the same preform. The terahertz antenna 1 is connected to the input terminal of the detector unit in the at least one first transistor, and the output terminal of the detector unit in the at least one first transistor is connected to the input terminal of the power amplifier in the at least one second transistor.

[0052] Specifically, the detector unit 2 can be formed by electrically connecting one or more first transistors, the number of which is determined by the circuit of the detector unit 2; the first transistor is a gallium nitride-based high electron mobility transistor. The power amplifier 3 can be formed by electrically connecting one or more second transistors, the number of which is determined by the circuit of the power amplifier 3; the second transistor is a gallium nitride-based high electron mobility transistor. At least one first transistor and at least one second transistor are integrated on the same preform, which has at least two transistors. A portion of the at least two transistors forms the detector unit 2, and the other portion forms the power amplifier 3. One of the transistors forming the detector unit 2 has a detector unit input terminal, which is connected to the terahertz antenna 1, and the other transistor has a detector unit output terminal. When the detector unit 2 includes one transistor, the detector unit input terminal and the output terminal are located on the same transistor; when the detector unit 2 includes more than one transistor, the detector unit input terminal and the output terminal are located on different transistors. One of the transistors forming power amplifier 3 has a power amplifier input terminal, which is connected to the output terminal of the detector unit.

[0053] For example, in Figure 2 In the circuit, the detector unit 2 consists of one transistor M1, and the power amplifier consists of two transistors M2 and M3. The gate and source of transistor M1 serve as the input terminals of the detector unit, which are connected to the terahertz antenna 1 respectively. The drain of transistor M1 serves as the output terminal of the detector unit. The gate of transistor M2 in the power amplifier serves as the input terminal of the power amplifier, which is connected to the drain of transistor M1.

[0054] In this embodiment, the connection between the terahertz antenna 1 and the input terminal of the detector unit in the gallium nitride-based high electron mobility transistor means that the terahertz antenna 1 can be externally connected to the input terminal of the detector unit, or the terahertz antenna 1 can be disposed on the input terminal of the detector unit and integrated on the same substrate as the detector unit and the power amplifier. Preferably, the terahertz antenna 1 is disposed on the input terminal of the detector unit and integrated on the same substrate as the detector unit and the power amplifier.

[0055] In one specific embodiment, the preform includes: a substrate 201, a nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, and a barrier layer 206, and at least one isolation trench 207, at least two sets of electrodes, and leads 214 are provided on the preform.

[0056] Specifically, substrate 201, nucleation layer 202, transition layer 203, buffer layer 204, channel layer 205, and barrier layer 206 are stacked sequentially. Each isolation trench 207 penetrates the barrier layer 206 and the channel layer 205 and is located in the buffer layer 204. Each group of electrodes is located on the barrier layer 206, and an isolation trench 207 is provided between adjacent groups of electrodes. Each group of electrodes includes a source electrode, a drain electrode, and a gate electrode, with the gate electrode located between the source electrode and the drain electrode. The source electrode and the gate electrode of any one of at least two groups of electrodes form the input terminal of the detector unit, the drain electrode of any one group of electrodes forms the output terminal of the detector unit, and the gate electrode of any other group of electrodes forms the input terminal of the power amplifier. The output terminal of the detector unit and the input terminal of the power amplifier are connected by a lead 214; a terahertz antenna 1 is provided on the input terminal of the detector unit.

[0057] Specifically, a preform is formed from a substrate 201, a nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, and a barrier layer 206. A set of electrodes and the preform located at the bottom of the electrodes form a transistor. Multiple sets of electrodes form multiple transistors. Some transistors form a detector unit 2, and other transistors form a power amplifier 3. In the transistors forming the detector unit 2, the source electrode and gate electrode of one transistor form the input terminal of the detector unit, and the terahertz antenna 1 is disposed on the source electrode and gate electrode. The drain electrode of another transistor serves as the output terminal of the detector unit. The remaining electrodes are connected according to the circuit structure of the detector unit 2. The input terminal and output terminal of the detector unit can be located in the same transistor or in different transistors. In the transistors forming the power amplifier 3, the gate electrode of one transistor serves as the input terminal of the power amplifier. This gate electrode is connected to the drain electrode, which serves as the output terminal of the detector unit, through a lead 214. The remaining electrodes are connected according to the circuit structure of the power amplifier 3.

[0058] Please see Figure 3 , Figure 3 This is a cross-sectional structural diagram of an array unit provided in an embodiment of the present invention. Figure 3In this array, a terahertz antenna, a detector unit, and a power amplifier are integrated on the same preform to form an array unit. This array unit includes a first transistor and a second transistor; specifically, the detector unit 2 includes a first transistor, and the power amplifier includes a second transistor. The first and second transistors are integrated on the same preform. The preform includes a substrate 201, a nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, and a barrier layer 206. Isolation trenches 207, a first source electrode 208, a first gate electrode 209, a first drain electrode 210, a second source electrode 211, a second gate electrode 212, a second drain electrode 213, and leads 214 are disposed on the preform. The substrate 201, nucleation layer 202, transition layer 203, buffer layer 204, channel layer 205, and barrier layer 206 are stacked sequentially. Each isolation trench 207 penetrates the barrier layer 206 and the channel layer 205 and is located in the buffer layer 204. The first source electrode 208, the first gate electrode 209, and the first drain electrode 210 are located on the barrier layer 206 and on one side of the isolation trench 207. The first gate electrode 209 is located between the first source electrode 208 and the first drain electrode 210. The first source electrode 208 and the first gate electrode 209 form a... The terahertz antenna 1 is disposed on the first source electrode 208 and the first gate electrode 209 at the input terminal of the detector unit, and the first drain electrode 210 forms the output terminal of the detector unit. The second source electrode 211, the second gate electrode 212, and the second drain electrode 213 are located on the barrier layer 206 and on the other side of the isolation trench 207. The second gate electrode 212 is located between the second source electrode 211 and the second drain electrode 213, and the second gate electrode 212 forms the input terminal of the power amplifier. The first drain electrode 210 is connected to the second gate electrode 212 through the lead 214.

[0059] In one specific embodiment, the nucleation layer 202, transition layer 203, buffer layer 204, and barrier layer 206 are all made of group III nitrides. A two-dimensional electron gas is formed between the channel layer 205 and the barrier layer 206.

[0060] In one specific embodiment, the substrate 201 is made of one or more of high-resistivity silicon, silicon carbide, sapphire, diamond, and aluminum nitride, with a thickness of 100 μm-1500 μm. The nucleation layer 202 is made of aluminum nitride, with a thickness of 50-300 nm. The transition layer 203 is made of one or more of aluminum gallium nitride, aluminum nitride / gallium nitride superlattice structures, with a thickness of 100-1000 nm. The buffer layer 204 is made of one or more of gallium nitride and aluminum gallium nitride, with a thickness of 100-5000 nm. The channel layer 205 is made of gallium nitride, with a thickness of 50-500 nm. The barrier layer 206 is made of one or more of aluminum gallium nitride, indium aluminum nitride, and aluminum nitride, with a thickness of 2-40 nm, wherein the aluminum component in aluminum gallium nitride, i.e., the atomic ratio of aluminum in aluminum gallium nitride, is 0.2-0.4; and the indium component in indium aluminum nitride, i.e., the atomic ratio of indium in indium aluminum nitride, is 0.1-0.2. The source and drain electrodes are made of one or more of the following materials: Ti, Al, Ni, and Au, with a thickness of 10-500 nm. The gate electrode is made of Pt / Au or Ni / Au, with a thickness of 10-800 nm.

[0061] Preferably, the substrate 201 is high-resistivity silicon with a resistivity of 5000 Ω·cm and a crystal orientation of [missing information]. <111> The transition layer 203 is made of aluminum gallium nitride (AlGaN) and has a thickness of 750 nm. The buffer layer 204 is made of gallium nitride (GaN) and has a thickness of 1000 nm. The barrier layer 206 is made of AlGaN and has a thickness of 15 nm, with an aluminum content of 0.25%. The source and drain electrodes are made of Ti / Al / Ni / Au and have thicknesses of 25 nm / 140 nm / 40 nm / 50 nm, respectively. The gate electrode is made of Pt / Au and has thicknesses of 20 nm / 100 nm.

[0062] Please see Figure 4 , Figure 4 This is a cross-sectional structural diagram of another array unit provided in an embodiment of the present invention.

[0063] Figure 4 The array unit includes a substrate 201, a nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, an isolation layer 215, a barrier layer 206, an isolation trench 207, a first source electrode 208, a first gate electrode 209, a first drain electrode 210, a second source electrode 211, a second gate electrode 212, a second drain electrode 213, and a lead 214. The isolation layer 215 is located between the channel layer 205 and the barrier layer 206. The isolation trench 207 penetrates the barrier layer 206, the isolation layer 215, and the channel layer 205, and is located within the buffer layer 204. The relative positions of the remaining structures are described above and will not be repeated here.

[0064] Specifically, the material of the isolation layer 215 includes aluminum nitride, and the thickness is 0.5-3 nm. Preferably, the material of the isolation layer 215 is aluminum nitride, and the thickness is 1 nm.

[0065] In one specific embodiment, the array unit includes a substrate 201, a nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, an isolation layer 215, a barrier layer 206, a cap layer 216, an isolation trench 207, a first source electrode 208, a first gate electrode 209, a first drain electrode 210, a second source electrode 211, a second gate electrode 212, a second drain electrode 213, and a lead 214. The cap layer 216 is located on the upper surface of the barrier layer 206, and the isolation trench 207 penetrates the cap layer 216, the barrier layer 206, and the channel layer 205, and is located within the buffer layer 204. The relative positions of the remaining structures are described above and will not be repeated here.

[0066] Specifically, the cap layer 216 is made of gallium nitride and has a thickness of 1-5 nm. Preferably, the cap layer 216 has a thickness of 2 nm.

[0067] In one specific embodiment, the array unit includes a substrate 201, a nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, an isolation layer 215, a barrier layer 206, a cap layer 216, an isolation trench 207, a first source electrode 208, a first gate electrode 209, a first drain electrode 210, a second source electrode 211, a second gate electrode 212, a second drain electrode 213, a lead 214, and a passivation layer 217, wherein the passivation layer 217 covers the device surface. The relative positions of the remaining structures are described above and will not be repeated here.

[0068] The highly integrated gallium nitride-based terahertz detector array unit of this embodiment has the following advantages: 1. A power amplifier is set at the output of the detector unit to amplify the generated terahertz photocurrent or terahertz photovoltage, thereby improving the detector's responsivity and sensitivity. 2. The detector unit and power amplifier are integrated on the same preform. The core device of the detector unit and power amplifier, the transistor, is a gallium nitride-based high electron mobility transistor. The detector unit and power amplifier can be manufactured using the same semiconductor manufacturing technology, reducing manufacturing costs. 3. The detector unit and power amplifier are monolithically integrated and housed in the same package. Compared with conventional discrete detector unit and power amplifier solutions, this reduces packaging and wiring costs and improves the reliability of the array unit. 4. Both the detector unit and power amplifier use gallium nitride-based high electron mobility transistors, enabling the entire detector array unit to withstand higher operating temperatures. 5. The integration of the detector unit and power amplifier on the same preform ensures manufacturing process compatibility, making it easier to achieve high-density, high-resolution terahertz focal plane arrays. VI. Terahertz antennas can also be integrated on the same substrate, which can further reduce manufacturing and packaging costs.

[0069] In summary, the terahertz detector array unit detection unit of this embodiment, along with the power amplifier, is composed of one or more monolithically integrated high electron mobility transistors. The transistors of the detection unit and the power amplifier are integrated on the same preform. The terahertz antenna, detection unit, and power amplifier can be monolithically integrated into one unit using semiconductor manufacturing processes and processed in the same batch. This effectively improves the uniformity and integration of detector pixels, reduces packaging and processing costs, improves the high-temperature operating capability of the entire detector array unit, and is also conducive to realizing a high-density terahertz detector focal plane array.

[0070] Implementation of Column 2

[0071] Based on the implementation of Column 1, please refer to Figure 5 , Figure 5 This is a schematic diagram of a highly integrated gallium nitride-based terahertz detector provided as an embodiment of the present invention. The detector includes several sub-units 100, which are arranged in an array. Each sub-unit 100 adopts a highly integrated gallium nitride-based terahertz detector array element as described in Embodiment 1.

[0072] Example 3

[0073] Based on the implementation of Column 1, please refer to Figure 6 , Figure 6 This is a schematic flowchart illustrating a method for fabricating a highly integrated gallium nitride-based terahertz detector array unit, provided as an embodiment of the present invention. The fabrication method includes the following steps:

[0074] S1. A nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, and a barrier layer 206 are sequentially grown on a substrate 201.

[0075] S2. Electrical isolation of the device is fabricated in the barrier layer 206, the channel layer 205 and the buffer layer 204, forming at least one isolation trench 207 that penetrates the barrier layer 206 and the channel layer 205 and is located in the buffer layer 204.

[0076] S3. At least two sets of source electrodes and drain electrodes are prepared on the barrier layer 206, such that each set of source electrodes and drain electrodes is located in the electrical region between at least one isolation trench 207.

[0077] S4. Prepare a gate electrode between the source electrode and the drain electrode of each group to form at least two groups of electrodes. The source electrode and the gate electrode of any one of the at least two groups of electrodes form the input terminal of the detector unit, the drain electrode of any one group of electrodes forms the output terminal of the detector unit, and the gate electrode of any other group of electrodes forms the input terminal of the power amplifier.

[0078] S5. A passivation layer 217 is prepared on the device surface so that the passivation layer 217 covers the device surface.

[0079] S6. Prepare lead 214 so that lead 214 connects the output end of the detector unit and the input end of the power amplifier, and prepare terahertz antenna 1 on the input end of the detector unit.

[0080] Furthermore, this embodiment uses a gallium nitride-based high electron mobility transistor comprising a first transistor and a second transistor, i.e., the detector unit 2 comprising a first transistor and the power amplifier comprising a second transistor, as an example to illustrate the fabrication method.

[0081] Please see Figures 7a-7k , Figures 7a-7k This is a schematic diagram illustrating the fabrication process of a highly integrated gallium nitride-based terahertz detector array unit provided in an embodiment of the present invention.

[0082] S1. A nucleation layer 202, a transition layer 203, a buffer layer 204, a channel layer 205, and a barrier layer 206 are sequentially grown on a substrate 201.

[0083] Specifically, it includes:

[0084] S11, Select crystal orientation as <111> High-resistivity silicon was used as substrate 201, with a thickness of 585 μm. Please refer to [link / reference]. Figure 7a ;

[0085] S12. Using Metal-Organic Chemical Vapor Deposition (MOCVD) technology and equipment, an aluminum nitride nucleation layer 202 with a thickness of 200 nm is epitaxially grown on a high-resistivity silicon substrate 201. Please refer to [link to relevant documentation]. Figure 7b ;

[0086] S13. Using MOCVD technology and equipment, a transition layer 203 is epitaxially grown on the aluminum nitride nucleation layer 202. The material is aluminum gallium nitride, and the thickness is 0.75 μm. Please refer to [link to relevant documentation]. Figure 7c ;

[0087] S14. Using MOCVD technology and equipment, a gallium nitride buffer layer 204 with a thickness of 1.5 μm is epitaxially grown on the aluminum nitride transition layer 203. Please refer to [link to relevant documentation]. Figure 7d ;

[0088] S15. Using MOCVD technology and equipment, a gallium nitride channel layer 205 with a thickness of 300 nm is epitaxially grown on the gallium nitride buffer layer 204. Please refer to [link / reference]. Figure 7e ;

[0089] S16. Using MOCVD technology and equipment, an aluminum gallium nitride barrier layer 206 with a thickness of 20 nm is epitaxially grown on the gallium nitride channel layer 205, wherein the aluminum composition is 0.25. Please refer to [link to relevant documentation]. Figure 7f ;

[0090] S2. Electrical isolation of the device is fabricated in the barrier layer 206, the channel layer 205 and the buffer layer 204 to form an isolation trench 207 that penetrates the barrier layer 206 and the channel layer 205 and is located in the buffer layer 204.

[0091] Specifically, a silicon dioxide layer is deposited on the surface of the barrier layer 206. After photolithography, a reactive ion etching (RIE) device is used to etch the mesa to a depth of 150 nm, so that the isolation trench 207 penetrates the aluminum gallium nitride barrier layer 206 and the gallium nitride channel layer 205, and is located in the buffer layer 204. Subsequently, the photoresist and silicon dioxide layer are removed to complete the electrical isolation. Please refer to [link to relevant documentation]. Figure 7g .

[0092] S3. A first source electrode 208, a first drain electrode 210, a second source electrode 211, and a second drain electrode 213 are fabricated on the barrier layer 206, such that the first source electrode 208 and the first drain electrode 210 are located in the electrical region on one side of the isolation trench 207, and the second source electrode 211 and the second drain electrode 213 are located in the electrical region on the other side of the isolation trench 207.

[0093] Specifically, using an electron beam evaporation apparatus, an ohmic multilayer metal of Ti / Al / Ni / Au material is deposited on the barrier layer 206 with thicknesses of 25nm / 130nm / 40nm / 50nm. The annealing temperature is 850℃ and the annealing time is 45s, forming a first source electrode 208, a first drain electrode 210, a second source electrode 211, and a second drain electrode 213. Please refer to [link to relevant documentation]. Figure 7h .

[0094] S4. A first gate electrode 209 and a second gate electrode 212 are placed on the barrier layer 206 such that the first gate electrode 209 is located between the first source electrode 208 and the first drain electrode 210, and the second gate electrode 212 is located between the second source electrode 211 and the second drain electrode 213.

[0095] Specifically, a silicon nitride passivation layer is deposited on the device surface using plasma-enhanced chemical vapor deposition (PECVD) technology and equipment. After photolithography, the gate region undergoes surface treatment. Using electron beam evaporation equipment, a Ni / Au gate stack metal layer with a thickness of 30nm / 200nm is deposited, annealed at 350℃ for 10 minutes, and then the photoresist and passivation layer are removed to form the first gate electrode 209 and the second gate electrode 212. (See [link to relevant documentation]). Figure 7i .

[0096] Furthermore, the first source electrode 208 and the first gate electrode 209 form the input terminal of the detector unit, the first drain electrode 210 forms the output terminal of the detector unit, and the second gate electrode 212 forms the input terminal of the power amplifier.

[0097] S5. A passivation layer 217 is prepared on the device surface so that the passivation layer 217 covers the device surface.

[0098] Specifically, a silicon nitride passivation layer 217 is deposited on the device surface using PECVD technology and equipment as a protective layer. Please refer to [link to relevant documentation]. Figure 7j .

[0099] S6. Prepare lead 214 so that lead 214 connects the output end of the detector unit and the input end of the power amplifier, and prepare terahertz antenna 1 on the input end of the detector unit.

[0100] Specifically, the passivation layer 217 is etched to expose the electrode contact metal, and interconnect metal is deposited on the first drain electrode 210 and the second gate electrode 212 to form leads 214. A terahertz antenna 1 is integrated on the first source electrode 208 and the first gate electrode 209. (See [link to previous section]). Figure 7k .

[0101] The highly integrated gallium nitride-based terahertz detector array unit in this embodiment has a simple manufacturing process, is compatible with existing processes, and has a relatively low manufacturing cost.

[0102] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A high-integration GaN-based terahertz detector array unit, characterized in that, The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. 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The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration gallium nitride-based terahertz detector array unit. The application relates to a high-integration S1, epitaxially growing a nucleation layer (202), a transition layer (203), a buffer layer (204), a channel layer (205) and a barrier layer (206) on a substrate (201) in sequence; the material of the barrier layer (206) is indium aluminum nitride; S2, preparing electrical isolation of the device in the barrier layer (206), the channel layer (205) and the buffer layer (204), forming at least one isolation groove (207) penetrating through the barrier layer (206) and the channel layer (205) and located in the buffer layer (204); S3, preparing at least two groups of source electrodes and drain electrodes on the barrier layer (206), so that each group of the source electrodes and the drain electrodes is located in an electrical region between the at least one isolation groove (207); S4, preparing a gate electrode between the source electrode and the drain electrode of each group, forming at least two groups of electrodes, the source electrode and the gate electrode of any one group of the at least two groups of electrodes form a detection cell input end, the drain electrode of any one group forms a detection cell output end, and the gate electrode of any one group of the remaining groups forms a power amplifier input end; S5, preparing a passivation layer (217) on the surface of the device, so that the passivation layer (217) covers the surface of the device; S6, preparing a lead (214) so that the lead (214) connects the detection cell output end and the power amplifier input end, and preparing a terahertz antenna (1) on the detection cell input end.

2. The high-integration gallium nitride-based terahertz detector array unit according to claim 1, wherein the material of the substrate (201) comprises one or more of high-resistance silicon, silicon carbide, sapphire, diamond, aluminum nitride, and the thickness is 100 µm-1500 µm; the material of the nucleation layer (202) comprises aluminum nitride, and the thickness is 50-300 nm; the material of the transition layer (203) comprises one or more of aluminum gallium nitride, aluminum nitride / gallium nitride superlattice structure, and the thickness is 100-1000 nm; the material of the buffer layer (204) comprises one or more of gallium nitride, aluminum gallium nitride, and the thickness is 100-5000 nm; the material of the channel layer (205) comprises gallium nitride, and the thickness is 50-500 nm; the material of the barrier layer (206) is one or more of aluminum gallium nitride, indium aluminum nitride, and aluminum nitride, and the thickness is 2-40 nm. The preform further comprises an isolation layer (215) located between the channel layer (205) and the barrier layer (206). 3.The high-integration GaN-based terahertz detector array unit of claim 1, wherein, The preform further comprises a cap layer (216) located on the upper surface of the barrier layer (206). 4.The high-integration GaN-based terahertz detector array unit of claim 1, wherein, The preform further comprises a plurality of sub-units arranged in an array, each of the sub-units being the high-integration gallium nitride-based terahertz detector array unit according to any one of claims 1-4.

5. A high-integration nitride gallium-based terahertz detector, characterized in that, ​

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