Display panel, display device and preparation method of display panel
By setting staggered cutout areas and complex layers in the display panel, the problem of the inability of the photosensitive element area of electronic devices to be fully displayed is solved, the light transmittance is improved and the risk of warping is reduced, and the packaging reliability is enhanced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- YUNGU GUAN TECH CO LTD
- Filing Date
- 2022-06-13
- Publication Date
- 2026-07-28
AI Technical Summary
In the existing technology, the photosensitive element area such as the front-facing camera of electronic devices cannot achieve full-screen display, and the patterning processing of the common electrode layer leads to a high risk of warpage, affecting the reliability of the packaging.
By setting a common electrode layer with a hollowed-out area in the display panel and misaligning it with the pixel opening, and using laser irradiation to react a predetermined conductive material with an electron-donating complexing group to generate a complex layer with higher light transmittance, the patterning of the common electrode layer is avoided.
This improves the light transmittance of the display panel, reduces the risk of warping of the common electrode layer during patterning, and enhances packaging reliability.
Smart Images

Figure CN115050791B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of display panel manufacturing technology, and in particular to a display panel, a display device, and a method for preparing the display panel. Background Technology
[0002] With the rapid development of electronic devices, users have increasingly higher requirements for screen ratio, making full-screen displays of electronic devices receive more and more attention from the industry.
[0003] Traditional electronic devices such as mobile phones and tablets need to integrate components such as front-facing cameras, earpieces, and infrared sensors. In existing technology, notches or holes are made in the display screen, allowing external light to enter the photosensitive element located beneath the screen. However, these electronic devices are not truly full-screen displays and cannot display images across the entire screen area; for example, the area corresponding to the front-facing camera cannot display an image. Summary of the Invention
[0004] This application provides a display panel, a display device, and a method for manufacturing the display panel, which enables at least a portion of the display panel to be light-transmitting and displayable, facilitating the under-display integration of photosensitive components.
[0005] In a first aspect, embodiments of this application provide a display panel, including a pixel definition layer with pixel openings; a common electrode layer disposed on the light-emitting side of the pixel definition layer, the common electrode layer having a hollow area, the hollow area being offset from the pixel openings; a complex layer, at least partially disposed in the hollow area, the light transmittance of the complex layer being greater than that of the common electrode layer; the common electrode layer comprising a predetermined conductive material, the complex layer being generated by the reaction of the predetermined conductive material.
[0006] In some embodiments, the display panel further includes a dielectric layer, which is disposed adjacent to a common electrode layer. The dielectric layer has a complex opening on the side facing the common electrode layer, and the complex opening is disposed corresponding to a hollow area. A portion of the complex layer is disposed within the complex opening.
[0007] In some embodiments, the dielectric layer includes a first sublayer located on the side of the common electrode layer facing away from the pixel definition layer; and / or, the dielectric layer includes a second sublayer located on the side of the common electrode layer facing the pixel definition layer; optionally, the first sublayer includes a polarizer; optionally, the second sublayer includes an ion implantation layer.
[0008] In some embodiments, a shielding sublayer is further included, located on the side of the pixel definition layer away from the common electrode layer. The shielding sublayer has a through hole that extends through the thickness direction of the display panel. The orthographic projection of the pixel opening along the thickness direction is located within the orthographic projection of the shielding sublayer along the thickness direction. The orthographic projection of the through hole along the thickness direction is offset from the orthographic projection of the pixel opening along the thickness direction.
[0009] Secondly, embodiments of this application provide a display device, including the display panel provided in any of the above embodiments.
[0010] In a third aspect, embodiments of this application provide a method for fabricating a display panel. The method includes: providing a substrate, the substrate including a pixel definition layer, the pixel definition layer having pixel openings; fabricating a conductive layer on the light-emitting side of the pixel definition layer, the conductive layer including a predetermined conductive material; irradiating the conductive layer with a laser, causing the conductive layer to transform into a common electrode layer and a complex layer, the complex layer being generated by the reaction of the predetermined conductive material, wherein the common electrode layer has a hollowed-out area, the hollowed-out area being misaligned with the pixel openings, the complex layer being at least partially disposed in the hollowed-out area, and the light transmittance of the complex layer being greater than that of the common electrode layer.
[0011] In some embodiments, the substrate includes a shielding sub-layer located on the side of the pixel definition layer away from the light-emitting side. The shielding sub-layer has a through-hole that extends through the thickness direction of the display panel. The orthographic projection of the shielding sub-layer along the thickness direction covers the orthographic projection of the pixel opening along the thickness direction. The orthographic projection of the through-hole along the thickness direction is misaligned with the orthographic projection of the pixel opening along the thickness direction. In the step of laser irradiation of the conductive layer, the laser passes through the through-hole from the side of the shielding sub-layer away from the pixel definition layer to irradiate the conductive layer.
[0012] In some embodiments, the substrate further includes a pixel electrode disposed on the side of the pixel definition layer away from the light-emitting side, and the orthographic projection of the pixel opening along the thickness direction of the display panel is located within the orthographic projection of the pixel electrode along the thickness direction; in the step of laser irradiation of the conductive layer, the laser irradiates the conductive layer from the side of the pixel electrode away from the conductive layer.
[0013] In some embodiments, prior to the step of laser irradiation of the conductive layer, the method for preparing the display panel further includes: forming an encapsulation layer on the side of the conductive layer away from the substrate, wherein the orthographic projection of the encapsulation layer along the thickness direction of the display panel covers the orthographic projection of the conductive layer along the thickness direction.
[0014] In some embodiments, before or after the step of fabricating a conductive layer on the light-emitting side of the pixel definition layer, the method for fabricating the display panel further includes:
[0015] A dielectric material layer is formed on one side of the conductive layer, the dielectric material layer including electron-donating complexing groups;
[0016] In the step of laser irradiation of the conductive layer, the dielectric material layer reacts with the conductive layer to form a complex layer, a common electrode layer and a dielectric layer. A complex opening is formed on the side of the dielectric layer facing the common electrode layer. The complex opening is set in a corresponding hollow area. The complex layer is set in the hollow area and the complex opening.
[0017] In some embodiments, the dielectric layer includes a first sublayer. After the step of preparing a conductive layer on the light-emitting side of the pixel definition layer, the method for preparing the display panel further includes: forming a first material sublayer on the side of the conductive layer away from the pixel definition layer. The material of the first material sublayer includes an electron-donating complexing group, which includes at least one of pyridine, pyrimidine, azinyl, and hydroxyl. In the step of laser irradiating the conductive layer, the conductive layer and the first material sublayer react to form a common electrode layer, a complex layer, and the first sublayer. A first complex opening is formed on the side of the first sublayer facing the conductive layer. The first complex opening is correspondingly disposed with a hollow area. The complex layer is formed in the first complex opening and the hollow area.
[0018] In some embodiments, the dielectric layer includes a second sublayer. Before the step of preparing a conductive layer on the light-emitting side of the pixel definition layer, the method for preparing the display panel further includes: forming a second material sublayer on one side of the pixel definition layer, wherein the material of the second material sublayer includes an electron-donating complexing group, and the electron-donating complexing group includes o-phenanthroline; in the step of laser irradiating the conductive layer, the conductive layer and the first material sublayer react to form a common electrode layer, a complex layer and a second sublayer, wherein a second complex opening is formed on the side of the second sublayer facing the common electrode layer, the second complex opening is correspondingly disposed with the hollow area, and the complex layer is formed in the hollow area and the second complex opening.
[0019] The display device, display panel, and manufacturing method provided in this application embodiment have a common electrode layer with a hollow area that is misaligned with the pixel opening. At least a portion of the complex layer is disposed in the hollow area, and the transmittance of the complex layer is greater than that of the common electrode layer. This improves the transmittance of the hollow area in the common electrode layer without affecting its normal function, without having to improve the transmittance of the common electrode layer by patterning it. This reduces the risk of warping of the common electrode layer during patterning and improves the packaging reliability of the display panel. Attached Figure Description
[0020] The features, advantages, and technical effects of exemplary embodiments of the present application will now be described with reference to the accompanying drawings. In the drawings, the same parts are referred to by the same reference numerals. The drawings are not drawn to scale.
[0021] Figure 1 A front view of a display panel provided in an embodiment of this application;
[0022] Figure 2 for Figure 1 A schematic diagram of a cross-sectional structure along BB;
[0023] Figure 3 for Figure 1 Another sectional view of the structure along BB;
[0024] Figure 4 A flowchart illustrating a method for manufacturing a display panel according to an embodiment of this application;
[0025] Figure 5 A flowchart illustrating another method for fabricating a display panel according to an embodiment of this application;
[0026] Figure 6 A flowchart illustrating another method for manufacturing a display panel provided in this application embodiment;
[0027] Figure 7 A flowchart illustrating a method for manufacturing a display panel, provided as an embodiment of this application;
[0028] Figure 8 One of the flowcharts for another method of manufacturing a display panel provided in the embodiments of this application;
[0029] Figure 9 This is a second flowchart illustrating another method for manufacturing a display panel according to an embodiment of this application.
[0030] Explanation of reference numerals in the attached figures:
[0031] 100. Display panel;
[0032] 110. Substrate layer; 111. Masking sublayer; 111a. Via;
[0033] 120, Pixel definition layer; 120a, Pixel aperture;
[0034] 130, Common electrode layer; 130a, Hollowed-out area;
[0035] 140, dielectric layer; 140a, complex opening; 141a, first complex opening; 142a, second complex opening; 141, first sublayer; 142, second sublayer;
[0036] 150. Pixel electrode;
[0037] 160. Light-emitting element;
[0038] 170. Encapsulation layer;
[0039] 180. Complex layer;
[0040] X, thickness direction; AA1, first display area; AA2, second display area. Detailed Implementation
[0041] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without requiring some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples. In the accompanying drawings and the following description, at least some well-known structures and techniques are not shown to avoid unnecessarily obscuring the application; and, for clarity, the dimensions of some structures may be exaggerated. Furthermore, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.
[0042] Furthermore, for the sake of understanding and ease of description, the dimensions and thicknesses of each configuration shown in the figures are arbitrarily illustrated, but the concept of this application is not limited thereto. In the figures, the thicknesses of layers, films, panels, and regions, etc., are enlarged for clarity. In the figures, the thicknesses of some layers and regions are enlarged for better understanding and ease of description.
[0043] It is understandable that when an element such as a layer, film, region, or substrate is described as being "on" another element, the element may be directly on that other element, or there may be intermediate elements present. In contrast, when an element is described as being "directly on" another element, there are no intermediate elements present. Furthermore, throughout the specification, the phrase "on" the target element indicates that it is positioned above or below the target element and does not necessarily indicate that it is positioned "on the upper side" based on the direction of gravity.
[0044] Furthermore, unless explicitly stated otherwise, the word "including" will be understood to include the stated elements but not exclude any other elements.
[0045] In electronic devices such as mobile phones and tablets, it is necessary to integrate light-sensing components such as front-facing cameras, infrared light sensors, and proximity sensors on one side of the display panel. In some embodiments, a light-transmitting display area can be provided on the aforementioned electronic device, and the light-sensing components can be placed behind the light-transmitting display area, thereby achieving a full-screen display of the electronic device while ensuring that the light-sensing components function properly.
[0046] To improve the light transmittance of the light-transmitting display area, some related technologies involve patterning the common electrode layer. This creates cutouts in the common electrode layer within the light-transmitting area of the display panel, thereby increasing its light transmittance and consequently improving the light transmittance of the light-transmitting display area. Common techniques in these technologies include laser ashing to achieve this patterning of the common electrode layer.
[0047] However, in related technologies, when using laser ashing to pattern the common electrode layer, the common electrode layer is typically formed on a substrate after an array substrate, a light-emitting layer, and a common electrode layer. Then, the common electrode layer is irradiated with a laser from the side of the substrate away from the array substrate, using a light-shielding metal layer within the array substrate as a mask to achieve laser etching and patterning of the common electrode layer. The inventors discovered that after laser etching and patterning the common electrode layer, the edges of the common electrode layer tend to flare inwards, adversely affecting subsequent thin-film encapsulation processes and impacting the reliability of the encapsulation process.
[0048] To address the aforementioned issues, this application provides a display device, a display panel, and a method for manufacturing the same. The following description, in conjunction with the accompanying drawings, will illustrate various embodiments of the display panel, the display device, and the method for manufacturing the display panel.
[0049] This application provides a display panel, which may be an organic light-emitting diode (OLED) display panel.
[0050] Please refer to the following: Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the structure of a display panel 100 provided in the first aspect embodiment of this application. Figure 1 The display panel 100 includes a first display area AA1 and a second display area AA2. Figure 2 yes Figure 1 Sectional view at point BB.
[0051] like Figure 1 and Figure 2 As shown, the display panel 100 provided according to the first aspect of this application includes a pixel definition layer 120, a common electrode layer 130, and a complex layer 180. The pixel definition layer 120 is provided with a pixel opening 120a. The common electrode layer 130 is disposed on the light-emitting side of the pixel definition layer 120, and the common electrode layer 130 forms a hollow region 130a, which is offset from the pixel opening 120a. The complex layer 180 is at least partially disposed in the hollow region 130a, and the transmittance of the complex layer 180 is greater than that of the common electrode layer 130. The common electrode layer 130 includes a predetermined conductive material, and the complex layer 180 is formed by reacting the predetermined conductive material.
[0052] Specifically, the light-emitting side is the surface of the display panel 100 on which the image is displayed. Since the cutout area 130a and the pixel opening 120a are offset, the orthographic projections of the cutout area 130a and the pixel opening 120a do not overlap along the thickness direction X of the display panel 100. Optionally, the orthographic projection edge of the cutout area 130a along the thickness direction X can be set to coincide with the orthographic projection edge of the pixel opening 120a along the thickness direction, or the orthographic projection edge of the cutout area 130a along the thickness direction X can be set to be spaced apart from the orthographic projection edge of the pixel opening 120a along the thickness direction.
[0053] Specifically, the thickness direction X of the display panel 100 can be the stacking direction of the common electrode layer 130 and the pixel definition layer 120, that is, the common electrode layer 130 is located on one side of the pixel definition layer 120 along the thickness direction X.
[0054] Optionally, the entire complex layer 180 can be disposed within the hollowed-out region 130a, or a portion of the complex layer 180 along the thickness direction X can be disposed within the hollowed-out region 130a, while the remaining portion is disposed in the adjacent film layer region corresponding to the hollowed-out region 130a.
[0055] In some optional embodiments, the display panel 100 further includes a substrate layer 110, a pixel definition layer 120 disposed on one side of the substrate layer 110, and a common electrode layer 130 disposed on the side of the pixel definition layer 120 opposite to the substrate layer 110.
[0056] Optionally, the common electrode layer 130 and the complex layer 180 can be formed separately, with the complex layer 180 formed within the hollowed-out area 130a of the common electrode layer 130. Alternatively, during the fabrication of the display panel, a complete conductive layer comprising a predetermined conductive material can be formed first. Then, by means of laser irradiation of the corresponding area in the conductive layer and the hollowed-out area, the predetermined conductive material in the corresponding area of the conductive layer and the hollowed-out area reacts with the material in the adjacent film layer to generate a complex layer 180 with high light transmittance, while the area where no chemical reaction occurs forms the common electrode layer 130.
[0057] For example, the predetermined conductive material may include magnesium or silver, and the film material adjacent to the common electrode layer 130 includes electron-donating complexing groups. During laser irradiation, a mask may be used so that the magnesium or silver in the conductive layer corresponding to the hollow area reacts with the electron-donating complexing groups to generate a metal complex containing magnesium or silver ions with high light transmittance, which is the complex layer 180.
[0058] Specifically, electron-donating complexing groups have a strong ability to attract electrons, thus readily undergoing complexation reactions with metal ions such as silver or magnesium ions to form complex layers with high light transmittance. Electron-donating complexing groups can be electron-deficient groups formed by replacing one or more carbon atoms on a benzene ring with nitrogen atoms, or they can be groups that readily absorb electrons, such as hydroxyl groups. Given conductive materials like magnesium or silver, they can chemically react with electron-donating complexing groups and other substances in adjacent film layers to generate magnesium compounds, silver compounds, or magnesium-silver compounds with high light transmittance, such as magnesium complexes or silver complexes.
[0059] Optionally, the common electrode layer 130, including a first portion 131 and a second portion 132, can be provided in the entire first display area AA1 and the second display area AA2 of the display panel 100. Alternatively, the complex layer 180 can be provided only in areas of the display panel 100 where high light transmittance is required, such as in light-transmitting display areas of the display panel 100 that facilitate the integration of photosensitive components, such as the second display area AA2. The common electrode layer 130 has a hollow area 130a and the complex layer 180 is provided within the hollow area 130a, while other display areas, such as the first display area AA1, do not have a hollow area 130a formed in the common electrode layer 130. The specific selection can be made according to the needs.
[0060] A pixel electrode 150 and a light-emitting unit can be disposed within the pixel opening 120a. The pixel electrode 150 has the opposite polarity to the common electrode layer 130, so the light-emitting unit emits light under the action of the pixel electrode 150 and the common electrode layer 130. Optionally, in the process of using a laser to irradiate the conductive layer to generate the complex layer 180, the pixel electrode 150 can be used as a mask for laser irradiation, or a shielding layer that blocks the laser can be made on the side of the pixel definition layer 120 away from the common electrode layer 130, such as in the substrate layer 110, so that the laser can only irradiate the part of the conductive layer corresponding to the complex layer 180.
[0061] The display panel 100 provided in this application embodiment has a common electrode layer 130 having a hollow area 130a that is misaligned with the pixel opening 120a. At least a portion of the complex layer 180 is disposed in the hollow area 130a, and the transmittance of the complex layer 180 is greater than that of the common electrode layer 130. This improves the transmittance of the hollow area 130a in the common electrode layer 130 without affecting the normal function of the common electrode layer 130, without having to improve the transmittance of the common electrode layer 130 by patterning it. This reduces the risk of warping of the common electrode layer 130 during patterning and improves the packaging reliability of the display panel 100.
[0062] In some embodiments, the display panel 100 further includes an encapsulation layer 170, which is disposed on the side of the common electrode layer 130 away from the substrate layer 110. The encapsulation layer 170 has the function of blocking water and oxygen, and can prevent external water and oxygen from entering the interior of the display panel 100 and causing certain corrosion to its internal structure.
[0063] In some embodiments, the display panel 100 further includes a dielectric layer 140, which is disposed adjacent to the common electrode layer 130. The material of the dielectric layer 140 includes electron-donating complexing groups. The dielectric layer 140 has a complex opening 140a on the side facing the common electrode layer 130. The complex opening 140a is disposed corresponding to the hollow area 130a. A portion of the complex layer 180 is disposed within the complex opening 140a.
[0064] Optionally, the dielectric layer 140 can be disposed on the side of the common electrode layer 130 close to the pixel definition layer 120, or on the side of the common electrode layer 130 away from the pixel definition layer 120, or the dielectric layer 140 can be disposed on both sides of the common electrode layer 130 along the thickness direction X.
[0065] When the material of the dielectric layer 140 includes electron-donating complexing groups, under laser irradiation, the electron-donating complexing groups in the dielectric layer 140 react with the predetermined conductive material in the conductive layer to generate a complex layer 180. The complex layer 180 is not only formed in the hollowed-out region 130a of the common electrode layer 130, but also partially formed in the complex opening 140a at the corresponding position of the dielectric layer 140 and the hollowed-out region 130a. In other words, along the thickness direction X, the complex layer 180 is disposed in the hollowed-out region 130a and the complex opening 140a of the dielectric layer 140. This arrangement still helps to improve the light transmittance of the display panel 100. Furthermore, generating the complex layer 180 through laser irradiation helps to ensure the structural integrity of each film layer and reduces the risk of warping of parts of the display panel 100, which could affect the overall structural stability of the display panel 100.
[0066] In some alternative embodiments, the dielectric layer 140 includes a first sublayer 141 located on the side of the common electrode layer 130 opposite to the pixel definition layer 120.
[0067] In some alternative embodiments, the first sublayer 141 includes a polarizer.
[0068] Specifically, the polarizer improves the light emission direction of the display panel 100, and since it is in direct contact with the common electrode layer 130, the polarizer material can include electron-donating complexing groups. Under laser irradiation, these electron-donating complexing groups react chemically with metals such as magnesium or silver in the common electrode layer 130, generating a highly transparent metal complex within the hollowed-out area 130a of the common electrode layer 130 and the complex opening 140a of the first sub-layer 141. This configuration still achieves the requirement of high light transmittance for the complex layer 180.
[0069] In some embodiments, the dielectric layer 140 includes a second sublayer 142 located on the side of the common electrode layer 130 facing the pixel definition layer 120.
[0070] In some alternative embodiments, the second sublayer 142 includes an ion implantation layer.
[0071] Specifically, the ion implantation layer facilitates the injection of electrons or holes from the common electrode layer 130 into the light-emitting element 160, thereby enabling the display panel 100 to emit light. The ion implantation layer is in direct contact with the common electrode layer 130. The material of the ion implantation layer can include electron-donating complexing groups. Under laser irradiation, these electron-donating complexing groups react chemically with metals such as magnesium or silver in the common electrode layer 130, generating a highly transparent metal complex within the hollowed-out region 130a of the common electrode layer 130 and the complex opening 140a of the ion implantation layer. This configuration still achieves the requirement of high light transmittance for the complex layer 180.
[0072] like Figure 3 It shows Figure 1 Another sectional view of the structure along BB.
[0073] like Figure 1 and Figure 3 As shown, in some embodiments, the display panel 100 further includes a shielding sub-layer 111, which is located on the side of the pixel definition layer 120 away from the common electrode layer 130. The shielding sub-layer 111 has a through-hole 111a that extends through the display panel 100 along its thickness direction. The orthographic projection of the pixel opening 120a along the thickness direction X lies within the orthographic projection of the shielding sub-layer 111 along the thickness direction X, and the orthographic projection of the through-hole 111a along the thickness direction X is offset from the orthographic projection of the pixel opening 120a along the thickness direction X.
[0074] Specifically, the orthographic edge of the shielding sublayer 111 along the thickness direction X can coincide with the orthographic edge of the pixel opening 120a along the thickness direction X, or the orthographic edge of the shielding sublayer 111 along the thickness direction X is located outside the orthographic edge of the pixel opening 120a along the thickness direction X. Thus, during laser irradiation of the common electrode layer 130 from the side of the substrate layer 110 away from the pixel definition layer 120, the shielding sublayer 111 can act as a mask, allowing the laser to irradiate the common electrode layer 130 only through the via. This eliminates the need to use the pixel electrode 150 as a mask, which helps protect the integrity of the pixel electrode 150 structure.
[0075] Therefore, by setting the masking sub-layer 111, the opening size of the through hole 111a can be set, and the size of the hollow area 130a can be set. The masking sub-layer 111 has the function of protecting the pixel electrode 150 in the pixel opening 120a, which helps to ensure the integrity of the pixel electrode 150 structure.
[0076] The display device provided according to the second aspect of this application includes the display panel 100 provided in any of the above embodiments, and thus has the same technical effects, which will not be repeated here.
[0077] like Figure 4 A flowchart illustrating a method for manufacturing a display panel according to an embodiment of this application is shown.
[0078] like Figure 4 As shown, a method for manufacturing a display panel according to a third aspect of an embodiment of this application includes:
[0079] S10. A substrate is provided, the substrate including a pixel definition layer 120, the pixel definition layer 120 being provided with a pixel opening 120a.
[0080] S20. A conductive layer is prepared on the light-emitting side of the pixel definition layer 120. The conductive layer includes a predetermined conductive material.
[0081] S30. The conductive layer is irradiated by laser, causing it to transform into a common electrode layer 130 and a complex layer 180. The complex layer 180 is generated by the reaction of a predetermined conductive material. The common electrode layer 130 has a hollow region 130a, which is offset from the pixel opening 120a. The complex layer 180 is at least partially disposed in the hollow region 130a, and the transmittance of the complex layer 180 is greater than that of the common electrode layer 130.
[0082] Specifically, a pixel electrode 150 can be set inside the pixel opening 120a, and the pixel electrode 150 covers the pixel opening 120a. During the laser ashing process, the pixel electrode 150 protects the light-emitting element 160 inside the corresponding pixel opening 120a.
[0083] Optionally, the predetermined conductive material of the conductive layer can be a metal such as magnesium or silver, which reacts with highly active groups in the adjacent film layer to generate a film layer with high light transmittance.
[0084] In step S30, during the laser irradiation of the conductive layer, the laser cannot pass through the pixel electrode 150. Therefore, the pixel electrode 150 can be used as a mask. The laser passes through the area between adjacent pixel electrodes 150 and irradiates the conductive layer. The magnesium or silver in the conductive layer reacts chemically with the dielectric material attached thereto, such as electron-donating complexing groups, to generate a metal complex with high light transmittance. That is, a complex layer 180 with high light transmittance is formed in the conductive layer, and a common electrode layer 130 is formed.
[0085] Alternatively, during the laser irradiation of the conductive layer, a laser ashing process can be used to cause the predetermined conductive material in the conductive layer to react, or other processes can be used to cause the predetermined conductive material in the conductive layer to react.
[0086] The method for manufacturing a display panel provided in this application embodiment involves setting a conductive layer and including a predetermined conductive material in the conductive layer. During laser irradiation, the predetermined conductive material, such as magnesium or silver, in the conductive layer reacts with electron-donating complexing groups in adjacent film layers to generate a complex layer 180 with a higher transmittance than magnesium or silver. While meeting the transmittance requirements of the display panel 100, it is not necessary to pattern the common electrode layer 130, reducing the problem of warping of the common electrode layer 130 during the patterning process and improving the packaging reliability of the display panel 100.
[0087] In some embodiments, the substrate includes a shielding sub-layer 111 located on the side of the pixel definition layer 120 away from the light-emitting side. The shielding sub-layer 111 has a through-hole 111a that extends through the thickness direction X of the display panel 100. The orthographic projection of the shielding sub-layer 111 along the thickness direction X covers the orthographic projection of the pixel opening 120a along the thickness direction X. The orthographic projection of the through-hole 111a along the thickness direction X is misaligned with the orthographic projection of the pixel opening 120a along the thickness direction X. In step S30, the conductive layer is irradiated by laser light passing through the through-hole 111a from the side of the shielding sub-layer 111 away from the pixel definition layer 120.
[0088] Specifically, the shielding sublayer 111 can be made of metal. The laser cannot pass through the shielding sublayer 111, but passes through the via 111a to irradiate the conductive layer and generate the common electrode layer 130.
[0089] During the process of setting up a masking sublayer 111 and irradiating the conductive layer with laser from the side of the masking sublayer 111 away from the pixel definition layer 120, the masking sublayer 111 can be used as a mask for laser irradiation, so that the laser will not irradiate the pixel electrode 150, thereby protecting the pixel electrode 150. The size of the via 111a can be set as needed to set the specific size of the cutout area 130a, and then the specific size of the complex layer 180 can be set.
[0090] In some embodiments, the substrate further includes a pixel electrode 150 disposed on the pixel definition layer 120 away from the light-emitting side, and the orthographic projection of the pixel opening 120a along the thickness direction X of the display panel 100 is located within the orthographic projection of the pixel opening 120a along the thickness direction X. In step S30, laser irradiation of the conductive layer, the laser irradiates the conductive layer from the side of the pixel electrode 150 away from the conductive layer.
[0091] At this point, it is not necessary to set up a masking sublayer 111. The pixel electrode 150 in the pixel opening 120a can be used as a mask for laser ashing. The conductive layer can still be irradiated with laser to generate a common electrode layer 130 and a complex layer 180 with high light transmittance.
[0092] like Figure 5 A flowchart of a method for preparing a display panel according to another embodiment of this application is shown, wherein, prior to step S30, an encapsulation layer 170 is first formed.
[0093] like Figure 5 As shown, in some embodiments, prior to step S30, the laser irradiation of the conductive layer, the method for fabricating the display panel 100 further includes:
[0094] S40. An encapsulation layer 170 is formed on the side of the conductive layer away from the substrate. The orthogonal projection of the encapsulation layer 170 along the thickness direction X of the display panel 100 covers the orthogonal projection of the conductive layer along the thickness direction X.
[0095] Specifically, the encapsulation layer 170 is used to seal the conductive layer and other related film layers to prevent external water, oxygen, etc. from entering the interior of the encapsulation layer 170 and causing corrosion to the conductive layer or other film layers.
[0096] Before laser irradiation of the conductive layer, an encapsulation layer 170 is formed on the side of the conductive layer away from the substrate to position the conductive layer and other related film layers. Thus, during laser irradiation, the encapsulation layer 170 has a limiting effect on the conductive layer, further reducing the risk of warping of the formed common electrode layer 130 and improving the encapsulation reliability of the display panel 100.
[0097] like Figure 6 and Figure 7Flowcharts illustrating different methods for fabricating display panels according to embodiments of this application are shown.
[0098] like Figure 6 and Figure 7 As shown, in some embodiments, before or after step S20, which involves stacking a conductive layer on the pixel definition layer 120, the method for fabricating the display panel further includes:
[0099] S50. A dielectric material layer is formed on one side of the conductive layer, the dielectric material layer including electron-donating complexing groups. S30. In the step of laser irradiation of the conductive layer, the dielectric material layer reacts with the conductive layer to form a complex layer 180, a common electrode layer 130, and a dielectric layer 140. A complex opening 140a is formed on the side of the dielectric layer 140 facing the common electrode layer 130. The complex opening 140a is correspondingly disposed with respect to the hollowed-out region 130a. The complex layer 180 is disposed within the hollowed-out region 130a and the complex opening 140a.
[0100] Optionally, step S50 can be performed before or after step S20. When step S50 is performed before step S20, the dielectric material layer is located between the conductive layer and the pixel definition layer 120, and the dielectric layer 140 formed after laser irradiation may include an ion implantation layer. When step S50 is performed after step S20, the dielectric material layer is located on the side of the conductive layer away from the pixel definition layer 120, and the dielectric material layer formed after laser irradiation may be a polarizing layer. Of course, step S50 can be set both before and after step S20, in which case the dielectric material layer is located on both sides of the conductive layer along the thickness direction X, and a polarizing layer and an ion implantation layer are formed on both sides of the common electrode layer 130 along the thickness direction X after laser irradiation.
[0101] It is understandable that during the reaction between the dielectric material layer and the conductive layer, the electron-donating complexing groups in the dielectric material layer react with the predetermined conductive material in the conductive layer to generate a complex layer 180.
[0102] like Figure 8 A flowchart illustrating another method for manufacturing a display panel according to an embodiment of this application is shown.
[0103] like Figure 8As shown, in some embodiments, the dielectric layer 140 includes a first sublayer 141. After step S20, which involves preparing a conductive layer on the light-emitting side of the pixel definition layer 20, the method for preparing the display panel further includes: S51, forming a first material sublayer on the side of the conductive layer opposite to the pixel definition layer 120. The material of the first material sublayer includes an electron-donating complexing group, which includes at least one of pyridine, pyrimidine, azinyl, and hydroxyl groups. S30, in the step of laser irradiation of the conductive layer, the conductive layer reacts with the first material sublayer to form a common electrode layer, a complex layer 180, and the first sublayer. A first complex opening 141a is formed on the side of the first sublayer facing the conductive layer. The first complex opening 141a is correspondingly disposed with the hollow area 130a. The complex layer 180 is formed within the first complex opening 141a and the hollow area 130a.
[0104] In other words, in the embodiment where the dielectric layer 140 includes a first sub-layer 141, since the first sub-layer 141 is disposed on the side of the common electrode layer 130 away from the pixel definition layer 120, it is necessary to form a first material sub-layer on the side of the conductive layer away from the pixel definition layer 120 after forming the conductive layer. The first material sub-layer and the conductive layer respectively generate the first sub-layer 141 and the common electrode layer 130 during laser irradiation. Therefore, in the embodiment where the dielectric layer 140 includes a first sub-layer 141, step S50 is disposed after step S20.
[0105] It is understood that in the embodiment where the method for manufacturing the display panel includes step S40, forming an encapsulation layer 170 on the side of the conductive layer away from the substrate, step S51 is performed before step S40.
[0106] Understandably, under laser irradiation, the pyridine, pyrimidine, azinyl, and hydroxyl groups in the first material sublayer react more fully with the predetermined conductive materials of the conductive layer, such as magnesium or silver, which is conducive to generating more metal complexes with higher light transmittance, further improving the light transmittance of the complex layer 180, and thus improving the light transmittance of the corresponding area of the display panel 100.
[0107] like Figure 9 This illustration shows another flowchart of a method for manufacturing a display panel according to an embodiment of this application.
[0108] like Figure 9As shown, in some embodiments, the dielectric layer 140 includes a second sub-layer 142. Before the step of preparing a conductive layer on the light-emitting side of the pixel definition layer 120 (S20), the method for preparing the display panel further includes: (S52) forming a second material sub-layer on one side of the pixel definition layer 120. The material of the second material sub-layer includes an electron-donating complexing group, which includes o-phenanthroline. (S30) In the step of laser irradiation of the conductive layer, the conductive layer and the second material sub-layer react to form a common electrode layer, a complex layer 180, and a second sub-layer 142. A second complex opening 142a is formed on the side of the second sub-layer 142 facing the common electrode layer. The second complex opening 142a is correspondingly disposed with the hollow region 130a. The complex layer 180 is formed within the hollow region 130a and the second complex opening 142a.
[0109] In other words, in the embodiment where the dielectric layer 140 includes a second sub-layer 142, since the second sub-layer 142 is located between the common electrode layer 130 and the pixel definition layer 120, a second material sub-layer needs to be formed before the conductive layer is formed. Thus, during laser irradiation of the conductive layer, the second material sub-layer and the conductive layer are transformed into the second sub-layer 142 and the common electrode layer 130, respectively. Therefore, step S52 is performed before step S20.
[0110] Under laser irradiation, the o-phenanthroline in the second material sublayer can react more fully with the predetermined conductive materials in the conductive layer, such as magnesium or silver, to generate more metal complexes with higher light transmittance, which is beneficial to further improve the light transmittance of the complex layer 180.
[0111] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.
Claims
1. A display panel, comprising: A pixel definition layer, having pixel openings, characterized in that the display panel further includes: A common electrode layer is disposed on the light-emitting side of the pixel definition layer. The common electrode layer has a hollow area, which is offset from the pixel opening. A complex layer is at least partially disposed in the hollowed-out area, and the light transmittance of the complex layer is greater than that of the common electrode layer; the common electrode layer comprises a conductive material, and the complex layer is generated by the conductive material via laser irradiation reaction. The conductive layer includes the conductive material, and the common electrode layer and the complex layer are combined to form the conductive layer.
2. The display panel according to claim 1, characterized in that, The display panel further includes a dielectric layer, which is disposed adjacent to the common electrode layer. The dielectric layer is made of a material that includes electron-donating complexing groups. The dielectric layer has a complex opening on the side facing the common electrode layer. The complex opening is disposed corresponding to the hollow area. A portion of the complex layer is disposed within the complex opening.
3. The display panel according to claim 2, characterized in that, The dielectric layer includes a first sub-layer, which is located on the side of the common electrode layer opposite to the pixel definition layer; and / or The dielectric layer includes a second sub-layer located on the side of the common electrode layer facing the pixel definition layer.
4. The display panel according to claim 3, characterized in that, The first sublayer includes a polarizer.
5. The display panel according to claim 3, characterized in that, The second sublayer includes an ion implantation layer.
6. The display panel according to claim 1, characterized in that, It also includes a shielding sub-layer located on the side of the pixel definition layer away from the common electrode layer. The shielding sub-layer has a through hole that extends through the thickness direction of the display panel. The orthographic projection of the pixel opening along the thickness direction is located within the orthographic projection of the shielding sub-layer along the thickness direction. The orthographic projection of the through hole along the thickness direction is offset from the orthographic projection of the pixel opening along the thickness direction.
7. The display panel according to claim 1, characterized in that, The conductive material includes metallic materials.
8. The display panel according to claim 1, characterized in that, The conductive material includes at least one of magnesium or silver.
9. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 8.
10. A method for manufacturing a display panel, characterized in that, The preparation method includes: A substrate is provided, the substrate including a pixel definition layer, the pixel definition layer being provided with pixel openings; A conductive layer is prepared on the light-emitting side of the pixel definition layer, the conductive layer comprising a conductive material; The conductive layer is irradiated with a laser, causing it to transform into a common electrode layer and a complex layer. The complex layer is generated by the laser irradiation reaction of the conductive material. The common electrode layer has a hollowed-out area, which is offset from the pixel opening. The complex layer is at least partially disposed in the hollowed-out area, and the transmittance of the complex layer is greater than that of the common electrode layer.
11. The method for manufacturing a display panel according to claim 10, characterized in that, The substrate includes a shielding sub-layer located on the pixel definition layer away from the light-emitting side. The shielding sub-layer has a through hole that extends through the thickness direction of the display panel. The orthographic projection of the shielding sub-layer along the thickness direction covers the orthographic projection of the pixel opening along the thickness direction. The orthographic projection of the through hole along the thickness direction is offset from the orthographic projection of the pixel opening along the thickness direction. In the step of irradiating the conductive layer with laser, the laser passes through the via from the side of the shielding sublayer away from the pixel definition layer to irradiate the conductive layer.
12. The method for manufacturing a display panel according to claim 10, characterized in that, The substrate further includes a pixel electrode disposed on the pixel definition layer away from the light-emitting side, and the orthographic projection of the pixel opening along the thickness direction of the display panel is located within the orthographic projection of the pixel electrode along the thickness direction; In the step of irradiating the conductive layer with laser, the conductive layer is irradiated with laser from the side of the pixel electrode away from the conductive layer.
13. The method for manufacturing a display panel according to claim 10, characterized in that, Prior to the step of irradiating the conductive layer with laser, the method for manufacturing the display panel further includes: An encapsulation layer is formed on the side of the conductive layer opposite to the substrate, and the orthographic projection of the encapsulation layer along the thickness direction of the display panel covers the orthographic projection of the conductive layer along the thickness direction.
14. The method for manufacturing a display panel according to claim 10, characterized in that, Before or after the step of fabricating a conductive layer on the light-emitting side of the pixel definition layer, the method for fabricating the display panel further includes: A dielectric material layer is formed on one side of the conductive layer, the dielectric material layer comprising electron-donating complexing groups; In the step of irradiating the conductive layer with laser, the dielectric material layer reacts with the conductive layer to form the complex layer, the common electrode layer and the dielectric layer. A complex opening is formed on the side of the dielectric layer facing the common electrode layer. The complex opening is corresponding to the hollow area. The complex layer is disposed in the hollow area and the complex opening.
15. The method for manufacturing a display panel according to claim 14, characterized in that, The dielectric layer includes a first sub-layer, and after the step of fabricating a conductive layer on the light-emitting side of the pixel definition layer, the method for fabricating the display panel includes: A first material sublayer is formed on the side of the conductive layer opposite to the pixel definition layer. The material of the first material sublayer includes the electron-donating complexing group, which includes at least one of pyridine, pyrimidine, azinyl, and hydroxyl. In the step of laser irradiating the conductive layer, the conductive layer and the first material sub-layer react to form the common electrode layer, the complex layer and the first sub-layer; a first complex opening is formed on the side of the first sub-layer facing the conductive layer, the first complex opening is corresponding to the hollow area, and the complex layer is formed in the first complex opening and the hollow area.
16. The method for manufacturing a display panel according to claim 14, characterized in that, The dielectric layer includes a second sub-layer, and prior to the step of fabricating a conductive layer on the light-emitting side of the pixel definition layer, the method for fabricating the display panel further includes: A second material sublayer is formed on one side of the pixel definition layer. The material of the second material sublayer includes an electron-donating complexing group, and the electron-donating complexing group includes o-phenanthroline. In the step of laser irradiating the conductive layer, the conductive layer and the second material sub-layer react to form the common electrode layer, the complex layer and the second sub-layer. The second sub-layer has a second complex opening on the side facing the common electrode layer. The second complex opening is corresponding to the hollow area. The complex layer is formed in the hollow area and the second complex opening.
17. The method for manufacturing a display panel according to claim 10, characterized in that, The conductive material includes at least one of magnesium or silver.