Information processing method for wafer, electronic device, and storage medium
By processing defect information and generating images of the wafer bevel area, the problem of difficulty in assessing wafer bevel defects in existing technologies has been solved, enabling rapid and accurate defect assessment and immediate correction, thereby improving production efficiency and output.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- YANGTZE MEMORY TECH CO LTD
- Filing Date
- 2022-05-10
- Publication Date
- 2026-05-22
Smart Images
Figure CN115064457B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and more specifically, to an information processing method for a wafer, an electronic device, and a storage medium. Background Technology
[0002] Manufacturing semiconductor devices typically involves processing semiconductor wafers using various semiconductor manufacturing processes to form various features on the wafer. During the formation of these features, defects may be present in the central regions of the upper and lower surfaces of the wafer. Simultaneously, defects are also frequently found in the edge regions of the upper and lower surfaces, as well as the outer peripheral surfaces with bevels or chamfers. The edge regions of the upper and lower surfaces and the outer peripheral surfaces can be collectively referred to as wafer bevels. For example, defects on wafer bevels include, but are not limited to, notches, cracks, scratches, markings, particles, and residual chemicals. Defects at wafer bevels can fall into the central region, leading to reduced yield, cross-contamination, and wafer breakage.
[0003] In related technologies, bevel defect maps generated during wafer bevel inspection typically consist of multiple small dots distributed across the wafer image to indicate the presence of defects. However, it is difficult for technicians to quickly determine the density and severity of defects based on this type of bevel defect map. Summary of the Invention
[0004] One aspect of this disclosure provides a method for presenting a wafer bevel defect map. The method includes: acquiring first information about each defect in a predetermined region of the wafer, the first information including the coordinates and dimensions of the defect; dividing the predetermined region of the wafer into multiple sub-regions according to a predetermined rule; counting the number of defects in each sub-region and calculating the representative size of the defects in each sub-region; generating a first image, displaying the outline of the wafer in the first image, and displaying the number and representative size of defects in the corresponding sub-region at positions corresponding to each sub-region in the wafer outline.
[0005] Another aspect of this disclosure provides a display device. The display device includes: a memory, a processor, and a display screen; wherein the memory is configured to store program instructions; the processor is configured to execute the program instructions stored in the memory to: acquire first information about each defect in a preset region of a wafer, the first information including the coordinates and size of the defect; divide the preset region of the wafer into multiple sub-regions according to a preset rule; count the number of defects in each sub-region and calculate the representative size of the defects in each sub-region; generate a first image, displaying the outline of the wafer in the first image, and displaying the number and representative size of defects in the corresponding sub-region at positions corresponding to each sub-region in the wafer outline; the display screen is configured to display the first image.
[0006] Another aspect of this disclosure provides a computer-readable storage medium storing a computer program, which, when executed by a processor, causes the processor to perform the following method: acquiring first information about each defect in a preset region of a wafer, the first information including the coordinates and size of the defect; dividing the preset region of the wafer into multiple sub-regions according to a preset rule; counting the number of defects in each of the multiple sub-regions and calculating the representative size of the defects in each sub-region; generating a first image, displaying the outline of the wafer in the first image, and displaying the number and representative size of defects in the corresponding sub-region at the position corresponding to each sub-region in the wafer outline. Attached Figure Description
[0007] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the disclosed embodiments are briefly described below. The drawings described below are merely some embodiments of this disclosure. Those skilled in the art can derive other drawings from these drawings without creative effort, and these drawings may be included in this disclosure.
[0008] Figure 1a This is a schematic diagram of an exemplary wafer defect map according to an embodiment of this disclosure;
[0009] Figure 1b This is a schematic diagram of an exemplary wafer bevel region according to an embodiment of this disclosure;
[0010] Figure 2 This is a schematic flowchart of an information processing method for a wafer according to an embodiment of the present disclosure;
[0011] Figure 3 This is a schematic diagram of another exemplary wafer bevel defect diagram according to an embodiment of the present disclosure;
[0012] Figure 4 This is a schematic diagram of another exemplary wafer bevel defect diagram according to an embodiment of the present disclosure;
[0013] Figure 5 This is a schematic diagram of another exemplary wafer bevel defect diagram according to an embodiment of the present disclosure;
[0014] Figure 6 This is a physical schematic diagram of an exemplary wafer bevel defect according to an embodiment of this disclosure;
[0015] Figure 7 This is a schematic structural diagram of a display device according to an embodiment of the present disclosure. Detailed Implementation
[0016] The technical solutions in the embodiments of this disclosure will now be clearly described with reference to the accompanying drawings. It should be understood that the described embodiments are some, but not all, of the embodiments of this disclosure. Other embodiments obtained by those skilled in the art based on the described embodiments without creative effort should fall within the scope of this disclosure.
[0017] Embodiments of this disclosure will be described in detail with reference to the accompanying drawings. Unless otherwise specified, the following embodiments and features described herein can be combined with each other.
[0018] As previously mentioned, various defects may occur in the central and beveled regions of the upper and lower surfaces of a wafer during the formation of various features. Defect inspection of wafers is frequently performed during the manufacturing of semiconductor devices. In some embodiments, the data information of these defects can be generated by a wafer inspection machine (e.g., an electron beam machine). The defect data information includes the coordinates and dimensions of the defect in the wafer image. After the wafer inspection machine identifies the defect, it assigns the coordinates and dimensions to the defect, ultimately displaying it as a wafer defect map.
[0019] Figure 1a This is a schematic diagram of an exemplary wafer defect map according to an embodiment of this disclosure; Figure 1b This is a schematic diagram of an exemplary wafer bevel region according to an embodiment of this disclosure. It should be noted that... Figure 1a This can be understood as a planar schematic diagram of defects on the upper surface of a wafer. Figure 1b It can be understood as Figure 1a A magnified cross-sectional view of region A on the inclined plane of the middle wafer.
[0020] like Figure 1a As shown, a wafer defect map can be an image of the upper or lower surface of the wafer. Multiple small dots are distributed on the wafer image to represent defects present at different locations or coordinates on the wafer.
[0021] It should be noted that a wafer includes a top surface and a bottom surface. The top and bottom surfaces may have different defects. These defects are marked on images of the top and bottom surfaces of the wafer to form a wafer defect map.
[0022] Understandably, visual representation of defects in the central region of a wafer is effective because technicians can quickly determine the distribution, density, and severity of defects in this area. However, it is difficult for technicians to quickly identify defects in edge regions, i.e., the bevels of the wafer. Figure 1b The distribution, density, and severity of defects in the beveled region (shown) are illustrated. The beveled region is much smaller than the central region. Therefore, visual information about defects in the beveled region is less apparent, making it difficult to intuitively assess the distribution, density, and severity of defects in the wafer's beveled region. Here, as shown... Figure 1b As shown, the sloped region includes: the top edge region of the wafer, the upper sloped region, the vertex region, the lower sloped region, and the bottom edge region of the wafer.
[0023] This disclosure provides an information processing method for wafers, wherein defects in specific regions of the wafer, such as beveled regions, are presented for intuitive evaluation. This method more intuitively presents defects in specific regions of the wafer, such as beveled regions, enabling technicians to quickly determine the distribution, density, and severity of defects in specific regions of the wafer, such as beveled regions.
[0024] Figure 2 This is a schematic flowchart illustrating an information processing method for a wafer according to an embodiment of this disclosure. The method can be performed by a display device for displaying a wafer bevel defect map. The display device will be described in detail later. Specifically, the method includes the following procedures.
[0025] S201, Obtain first information about each defect in a preset area of the wafer. The first information includes the coordinates and size of the defect.
[0026] In some embodiments, the preset region includes a sloped region, which comprises: a wafer top edge region, an upper sloped region, a vertex region, a lower sloped region, and a wafer bottom edge region. Here, the sloped region can be referred to as... Figure 1b The boundaries of the upper sloping region, the vertex region, and the lower sloping region are easy to define. The boundaries of the wafer top edge region and the round bottom edge region can be adjusted according to the actual situation, such as by referring to the probability of historical defects.
[0027] In other embodiments, the preset region may be the entire surface of the wafer, the central region of the upper surface of the wafer, or the central region of the lower surface of the wafer.
[0028] Here, defects in a predefined area of the wafer include, but are not limited to, notches, cracks, scratches, particles, or residual chemicals.
[0029] Here, the first information includes, but is not limited to, the location and size of the defect. In some embodiments, the location of the defect can be characterized using coordinates, and in some specific embodiments, each wafer may have a reference point. Exemplarily, each wafer typically includes a small notch at its outer edge. This notch is used as a reference point in the coordinate system. The size of the defect can be determined based on its outer contour.
[0030] For example, if the outer contour of the defect is rectangular, then the size of the defect can be the long side of the rectangle.
[0031] For example, if the outer contour of the defect is circular, then the size of the defect can be the diameter of the circle. In other embodiments, if the defect is elliptical, then the size of the defect can be the major axis of the ellipse.
[0032] For example, if the defect is irregularly shaped, the size of the defect can be twice the maximum distance from a point on the edge of the irregular shape to the centroid of the irregular shape.
[0033] In some embodiments, defects on a predetermined region of the wafer can be detected by a wafer inspection machine (e.g., an electron beam machine). The first information can be obtained from the wafer inspection machine.
[0034] S202, according to a preset rule, divides a preset area of the wafer into multiple sub-regions.
[0035] Here, the preset rules may include dividing a preset region into sub-regions of equal size based on parameters such as area or angle. In some specific embodiments, the sub-regions may be divided appropriately according to the actual situation of the specific wafer or process requirements.
[0036] For example, when the preset region includes the central region of the upper surface of the wafer, the preset region of the wafer can be divided into multiple square sub-regions of equal area according to the saw lines on the wafer used to separate different chips (dies).
[0037] For example, when the preset region includes the beveled area of the wafer, the preset region of the wafer can be divided into multiple arc-shaped sub-regions of equal curvature along the radial direction of the circle containing the wafer, with the center of the circle as the center. For instance, the beveled area of the wafer can be uniformly divided into multiple sub-regions along multiple radial directions with the center of the wafer as the center, and the distribution of defects in each sub-region can be displayed. When the beveled area is divided into a small number (e.g., 2) of sub-regions, the distribution of defects may appear too coarse to show sufficient detail. When the beveled area is divided into a large number (e.g., 16) of sub-regions, the distribution of defects may appear too detailed to show a high level of trend. In some specific embodiments, the beveled area is uniformly divided into 4 sub-regions.
[0038] S203, count the number of defects in each of the multiple sub-regions, and calculate the representative size of the defects in each sub-region.
[0039] Specifically, the number of defects in each sub-region is counted to represent the defect density in each sub-region. The representative size of the defects in each sub-region is calculated to represent the defect severity in each sub-region.
[0040] In some embodiments, counting the number of defects in each of the plurality of sub-regions includes:
[0041] Based on the coordinates of each defect, determine the sub-region in which the corresponding defect falls;
[0042] When the coordinates of a defect fall into the corresponding sub-region, the number of defects in the corresponding sub-region increases by 1.
[0043] Here, after the sub-regions are defined, the coordinate range of each sub-region can be calculated based on its boundaries. Then, each defect in the slope region is examined to determine if its coordinates fall within the coordinate range of any of the multiple sub-regions. When a defect's coordinates fall within the coordinate range of a sub-region, the defect count for that sub-region increases by one. Sub-regions with a larger number of defects have a higher defect density. Sub-regions with a smaller number of defects have a lower defect density.
[0044] In some embodiments, calculating the representative size of the defect in each sub-region includes:
[0045] Calculate the average size of each defect in each sub-region, and determine the average size as the representative size of the defects in each sub-region;
[0046] or,
[0047] The maximum size of the defect in each sub-region is determined as the representative size of the defect in each sub-region.
[0048] Understandably, the representative dimensions here can be adjusted according to actual process requirements. When the process focuses more on the extreme cases of defects, the representative dimension can be selected as the maximum size of defects in each sub-region. When the process focuses more on the average case of defects, the representative dimension can be selected as the average size of defects in each sub-region.
[0049] In some embodiments, after calculating the number of defects and the representative size of defects in each sub-region, the number of defects and the representative size of defects in each sub-region are normalized. Thus, when the number of defects and the representative size of defects in each sub-region are subsequently displayed in a wafer bevel defect map, the visual proportion of the number of defects and the representative size of defects in each sub-region relative to the wafer image size can be appropriately controlled.
[0050] S204, Generate a first image, display the outline of the wafer in the first image, and display the number and representative size of defects in the corresponding sub-region at the position corresponding to each sub-region in the wafer outline.
[0051] Here, to more intuitively illustrate the defects in the preset area of the wafer, an image is generated. This image displays the wafer's outline, and within that outline, the defects in each sub-region are shown. In some embodiments, different methods can be used to display the defects in each sub-region. For example, geometric shapes, numbers, etc. The following example still uses a beveled area as the preset region, combined with... Figures 3 to 5 A detailed description is provided of how defects are displayed in the sloped area.
[0052] In some specific embodiments, at the location corresponding to each sub-region in the wafer outline, the number and representative size of defects in the corresponding sub-region are displayed in a geometric manner.
[0053] Here, the density and severity of defects can be represented by the geometry displayed for each sub-region in the wafer image. The geometry includes at least two features, representing the number of defects in each sub-region and the representative size of the defects. In some embodiments, the geometry is displayed at the center point of the corresponding sub-region in the wafer outline. In other words, the center point of the geometry coincides with the center point of each sub-region in the wafer outline.
[0054] Understandably, displaying defects in the center of each sub-region can more clearly distinguish each sub-region when no sub-region boundaries are shown in the first image. It should be noted that, where sub-regions are distinguishable, the geometry can be displayed at any location within the wafer outline corresponding to each sub-region.
[0055] In some embodiments, when the number and representative size of defects in the first sub-region are both less than a first preset threshold, the geometry is not displayed at the location of the first sub-region.
[0056] Here, the first preset threshold can characterize a situation where neither the number of defects nor their representative size affects the performance of the functional circuits on the wafer. The first preset threshold can be adjusted according to actual conditions. For example, the first preset threshold can be that the number of defects is 0.
[0057] Below are some specific examples of geometric shapes.
[0058] For example, such as Figure 3 As shown, the geometry is a solid straight line pointing to the center of the circle containing the wafer outline; the length of the solid straight line represents the number of defects in each sub-region; the width of the solid straight line represents the representative size of the number of defects in each sub-region.
[0059] For example, such as Figure 4 As shown, the geometry is a solid-lined annulus; the diameter of the solid-lined annulus represents the number of defects in each sub-region, and the width of the solid line of the solid-lined annulus represents the representative size of the defects in each sub-region.
[0060] It should be noted that the geometric shapes described in this disclosure can be understood to include, but are not limited to, straight lines, rings, etc. The straight lines, rings, etc., which can visually display the number and representative size of defects in the corresponding sub-regions, enabling those skilled in the art to quickly determine the distribution, density, and severity of defects in the wafer bevel region, should all be understood as the geometric shapes described in this disclosure.
[0061] In some embodiments, at the location corresponding to each sub-region in the wafer outline, the number and representative size of defects in the respective sub-region are displayed numerically.
[0062] For example, such as Figure 5 As shown, the value of one number in parentheses represents the number of defects in each sub-region, and the value of the other number in parentheses represents the representative size of the defects in each sub-region.
[0063] In other examples, different dimensions of a number can be used to display the number and representative size of defects in the corresponding sub-regions. For example, a number value can be used to represent the number of defects in each sub-region, and the grayscale of the number can represent the representative size of the defects in each sub-region.
[0064] Understandably, when generating the first image, defects in the wafer's top edge region, upper slope region, vertex region, lower slope region, and the sloped edge region of the wafer's bottom edge region can all be shown, avoiding the need to view defect images of multiple wafers on different surfaces and improving the efficiency of wafer defect identification.
[0065] In some embodiments, the method further includes:
[0066] Based on the first image, determine the number of defects and / or the second sub-regions whose representative size is greater than a second preset threshold in each sub-region.
[0067] Here, the second preset threshold can characterize how the number of defects and / or representative size affect the performance of functional circuits on the wafer. The second preset threshold can be adjusted according to actual conditions. Thus, the first image can intuitively identify which sub-regions have more serious suspected defect problems. Furthermore, a magnified image of the sub-region with more serious suspected defect problems, i.e., the second sub-region, can be viewed, thereby finally determining the location of serious defects on the wafer and providing data support for process evaluation or product performance evaluation.
[0068] As previously mentioned, the number of sub-regions into which the preset area is divided affects the defect presentation. Understandably, the more sub-regions the preset area is divided into, the more detailed the defect presentation, but the longer the statistical analysis takes; conversely, the fewer sub-regions the preset area is divided into, the coarser the defect presentation, but the shorter the statistical analysis takes. If the preset area is divided into fewer sub-regions, and then the sub-regions with the most serious suspected defects are identified, further subdividing and statistically analyzing these sub-regions can simultaneously achieve the advantages of short processing time and detailed defect presentation.
[0069] Based on this, in some embodiments, dividing the preset region of the wafer into multiple sub-regions according to a preset rule includes:
[0070] The wafer is divided into M sub-regions of equal area, where M is a positive integer greater than 1.
[0071] For example, the beveled region of the wafer can be uniformly divided into multiple sub-regions along multiple radial directions with the wafer center as the center, to show the distribution of defects in each sub-region. In a specific example, the beveled region is uniformly divided into 4 sub-regions.
[0072] In some embodiments, the method further includes:
[0073] Based on the first image, determine the number of defects and / or the second sub-regions whose representative size is greater than a second preset threshold in the M sub-regions;
[0074] The second sub-region is divided into N secondary sub-regions; where N is a positive integer greater than 1.
[0075] Generate a second image, display the outline of the second sub-region in the second image, and display the number and representative size of defects in the corresponding second sub-region at the position of each second sub-region in the outline of the second sub-region;
[0076] Based on the second image, determine the number of defects and / or the corresponding secondary sub-regions whose representative size is greater than a second preset threshold in the N secondary sub-regions.
[0077] Here, a method of first coarsely defining the molecular region and then further subdividing it into sub-regions can be used to screen out the sub-regions with more serious suspected defects, namely the corresponding secondary sub-regions.
[0078] In some embodiments, the method further includes:
[0079] Obtain the third image corresponding to the second sub-region / the corresponding secondary sub-region;
[0080] Based on the third image, second information of each defect in the second sub-region / corresponding secondary sub-region is determined; the second information includes at least the location and shape of the defect.
[0081] Here, the third image may include the physical image corresponding to the second sub-region / the corresponding secondary sub-region.
[0082] Taking the preset area as a sloped area as an example, for instance, Figure 6 This is a physical schematic diagram of an exemplary wafer bevel defect according to an embodiment of this disclosure. The location and shape of the defect can be further determined through the third image, thereby ultimately determining the defect situation on the wafer.
[0083] In embodiments of this disclosure, taking a predefined area as a sloped region as an example, defects in the sloped region are processed to more intuitively present the distribution, density, and severity of defects on the wafer sloped defect map, enabling technicians interpreting the wafer sloped defect map to quickly assess the defect situation in the wafer sloped region. This method can be combined with existing methods or other methods that present defects in the central region.
[0084] Understandably, taking the sloped area as an example, compared with the central area, the area of the sloped area is not only much smaller, but the distribution of defects in the sloped area is also more dense. After obtaining the defects in the sloped area, it is usually necessary to manually inspect the defects in the sloped area, such as checking each defect map one by one or manually finding and locating the defect map of a specific wafer sloped area, and then judging the defect result based on the defect map and taking corrective measures. Because the defects in the sloped area are numerous and dense, there is often a gap of several days between obtaining the defects in the sloped area and taking corrective measures manually, and it cannot be processed online in real time.
[0085] The method according to this disclosure can quickly, accurately, and timely locate and position defects in a pre-defined area of a wafer, and can intuitively display the distribution, density, and severity of defects in the pre-defined area of the wafer. This allows technicians to quickly determine the defect results in the pre-defined area of the wafer online and take corrective measures online in a timely manner, avoiding the disadvantage of the lag between defect detection and corrective measures. It also enables online feedback and adjustment, thereby improving the overall yield.
[0086] In the manufacturing of semiconductor devices, defects in pre-defined areas of the wafer can lead to reduced yield. Rapid assessment of defects during manual pre-defined area inspection is crucial for cost control. The results of manual inspection of pre-defined areas are used to determine corrective actions to reduce defects in these areas. Therefore, the method according to this disclosure improves overall yield.
[0087] This disclosure also provides a display device for performing the disclosed method. Figure 7 This is a schematic structural diagram of a display device according to an embodiment of the present disclosure. Figure 7 As shown, the display device includes a display screen 701, a processor 702, a memory 703, and a data interface 704.
[0088] Display screen 701 can be a liquid crystal display (LCD) or an organic light-emitting diode (OLED) display. The display screen can also be a touch screen. Processor 702 can be a central processing unit (CPU). Processor 702 can also include hardware chips. Hardware chips can be application-specific integrated circuits (ASICs), programmable logic devices (PLDs), or combinations thereof. For example, a PLD can be a complex programmable logic device (CPLD), a field-programmable gate array (FPGA), or a combination thereof. Memory 703 can include volatile memory. Memory 703 can also include non-volatile memory. Memory 703 can also include combinations of the aforementioned types of memory. Data interface 704 can include a keyboard, a mouse, and a USB interface. Users can use the keyboard, mouse, and USB interface to input wafer images and defect information.
[0089] In some embodiments, memory 703 is configured to store program instructions, and processor 702 is configured to execute the program instructions stored in memory. When the program instructions are executed, processor 702 calls the program instructions stored in memory 703 to perform the following: acquiring first information about each defect in a preset region of the wafer, the first information about the defects including the coordinates and size of each defect on the image; dividing the preset region of the wafer into multiple sub-regions according to a preset rule; counting the number of defects in each sub-region of the multiple sub-regions, and calculating the representative size of the number of defects in each sub-region; generating a first image, displaying the outline of the wafer in the first image, and displaying the number of defects and the representative size of the corresponding sub-region at the position corresponding to each sub-region in the wafer outline; and displaying the first image on the display screen 701.
[0090] In some embodiments, when counting the number of defects in each sub-region, the processor 702 is further configured to: determine which sub-region the coordinates of each defect in the preset region fall into; and whenever the coordinates of a defect fall into a sub-region, the number of defects in the sub-region is increased by 1.
[0091] In some embodiments, when calculating the representative size of a defect in each sub-region, the processor 702 is further configured to calculate the average size of the defect in each sub-region and determine the average size as the representative size of the defect in each sub-region. Alternatively, when calculating the representative size of a defect in each sub-region, the processor 702 is further configured to determine the maximum size of the defect in each sub-region as the representative size of the defect in each sub-region.
[0092] In some embodiments, the processor 702 is further configured to display the number and representative size of defects in each sub-region in a geometric manner at the location corresponding to each sub-region in the wafer outline.
[0093] In some embodiments, the geometry is a solid straight line pointing to the center point of the wafer image. The length of the solid straight line represents the number of defects in each sub-region, and the width of the solid straight line represents the representative size of the defects in each sub-region. In other embodiments, the geometry is a solid-lined ring. The diameter of the solid-lined ring represents the number of defects in each sub-region, and the width of the solid-lined ring represents the representative size of the defects in each sub-region. In still other embodiments, the geometry is a multi-digit number pointing to the center point of the wafer image, where the tens digit of the multi-digit number represents the number of defects in each sub-region, and the units digit of the multi-digit number represents the representative size of the defects in each sub-region.
[0094] In some embodiments, when the number and representative size of defects in the first sub-region are both less than a first preset threshold, the processor 702 is further configured to not display geometry at the location of the first sub-region.
[0095] In some embodiments, the processor 702 is further configured to determine, based on the first image, a second sub-region with a number of defects and / or a representative size greater than a second preset threshold.
[0096] In some embodiments, dividing the preset region of the wafer into multiple sub-regions according to a preset rule includes:
[0097] The processor 702 is further configured to divide a preset region of the wafer into M sub-regions of equal area; where M is a positive integer greater than 1.
[0098] In some embodiments, the processor 702 is further configured to determine, based on the first image, the number of defects in M sub-regions and / or a second sub-region whose representative size is greater than a second preset threshold.
[0099] The second sub-region is divided into N secondary sub-regions; where N is a positive integer greater than 1.
[0100] Generate a second image, display the outline of the second sub-region in the second image, and display the number and representative size of defects in the corresponding second sub-region at the position of each second sub-region in the outline of the second sub-region;
[0101] Based on the second image, determine the number of defects and / or the corresponding secondary sub-regions whose representative size is greater than a second preset threshold in the N secondary sub-regions.
[0102] In some embodiments, the processor 702 is further configured to acquire a third image corresponding to the second sub-region / the corresponding secondary sub-region;
[0103] Based on the third image, second information of each defect in the second sub-region / corresponding secondary sub-region is determined; the second information includes at least the location and shape of the defect.
[0104] In some embodiments, when displaying geometry in an image of the wafer to illustrate the number of defects and representative dimensions in each sub-region, processor 702 is further configured to display the geometry at the center point of each sub-region, wherein the center point of the geometry coincides with the center point of each sub-region.
[0105] In some embodiments, after counting the number of defects in each sub-region and calculating the representative size of the defects in each sub-region, the processor 702 is further configured to normalize the number of defects in each sub-region and the representative size of the defects in each sub-region among the plurality of sub-regions.
[0106] In embodiments of this disclosure, defects in a predetermined region are processed to more intuitively present the distribution, density, and severity of defects on a wafer bevel defect map, enabling technicians interpreting the wafer bevel defect map to quickly assess the defect situation in the predetermined region of the wafer. This method can be combined with existing methods or other methods that present defects in a central region.
[0107] This disclosure also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program. When executed by a processor, the computer program implements... Figure 7 The illustration shows an embodiment of a wafer bevel defect diagram display device. Its description is omitted.
[0108] The computer-readable storage medium can be an internal storage unit of the device described in any of the foregoing embodiments. For example, the computer-readable storage medium can be a hard disk or internal memory of the device. The computer-readable storage medium can also be an external storage device of the device, such as an insertable hard disk, smart media card (SMC), secure digital card (SD card), flash memory card, etc. Furthermore, the computer-readable storage medium may include both internal storage units and external storage devices. The computer-readable storage medium can also store computer programs and other programs and data required by the device. The computer-readable storage medium can also temporarily store data that has been output or data that will be output.
[0109] Those skilled in the art should understand that all or part of the processes in the foregoing method embodiments can be implemented by a computer program instructing relevant hardware. The computer program can be stored in a computer-readable storage medium, and when executed, the computer program implements the processes of the foregoing method embodiments. The storage medium can be a disk, optical disk, read-only memory (ROM), or random access memory (RAM).
[0110] The foregoing embodiments have described in detail the purpose, technical solutions, and beneficial effects of this disclosure. The foregoing embodiments are merely some examples of this disclosure and should not be used to limit the scope of this disclosure. Therefore, any changes, equivalent substitutions, and modifications made in accordance with the claims of this disclosure still fall within the scope of this disclosure.
Claims
1. An information processing method for wafers, characterized in that, include: Obtain first information about each defect in a preset area of the wafer, the first information including the coordinates and size of the defect; According to a preset rule, the preset area of the wafer is divided into multiple sub-regions; The number of defects in each of the plurality of sub-regions is counted, and the representative size of the defects in each sub-region is calculated; The representative dimensions include the average size or the maximum size; A first image is generated, in which the outline of the wafer is displayed, and the number and representative size of defects in each sub-region are displayed at the corresponding position in the wafer outline.
2. The method according to claim 1, characterized in that, The counting of the number of defects in each of the plurality of sub-regions includes: Based on the coordinates of each defect, determine the sub-region in which the corresponding defect falls; When the coordinates of a defect fall into the corresponding sub-region, the number of defects in the corresponding sub-region increases by 1.
3. The method according to claim 1, characterized in that, At the location corresponding to each sub-region in the wafer outline, the number and representative size of defects in the corresponding sub-region are displayed in a geometric manner.
4. The method according to claim 3, characterized in that, The geometry is a solid straight line pointing to the center of the circle containing the wafer outline; the length of the solid straight line represents the number of defects in each sub-region; the width of the solid straight line represents the representative dimension of the number of defects in each sub-region.
5. The method according to claim 3, characterized in that, When the number and representative size of defects in the first sub-region are both less than a first preset threshold, the geometry is not displayed at the location of the first sub-region.
6. The method according to claim 1, characterized in that, The method further includes: Based on the first image, determine the number of defects and / or the second sub-regions whose representative size is greater than a second preset threshold in each sub-region.
7. The method according to claim 1, characterized in that, The process of dividing a predetermined region of the wafer into multiple sub-regions according to a preset rule includes: The wafer is divided into M sub-regions of equal area, where M is a positive integer greater than 1.
8. The method according to claim 7, characterized in that, The method further includes: Based on the first image, determine the number of defects and / or the second sub-regions whose representative size is greater than a second preset threshold in the M sub-regions; The second sub-region is divided into N secondary sub-regions; where N is a positive integer greater than 1. Generate a second image, display the outline of the second sub-region in the second image, and display the number and representative size of defects in the corresponding second sub-region at the position of each second sub-region in the outline of the second sub-region; Based on the second image, determine the number of defects and / or the corresponding secondary sub-regions whose representative size is greater than a second preset threshold in the N secondary sub-regions.
9. The method according to claim 6 or 8, characterized in that, The method further includes: Obtain the third image corresponding to the second sub-region / the corresponding secondary sub-region; Based on the third image, second information of each defect in the second sub-region / corresponding secondary sub-region is determined; the second information includes at least the location and shape of the defect.
10. The method according to claim 1, characterized in that, The preset area includes a sloped area, which includes: the top edge area of the wafer, the upper sloped area, the vertex area, the lower sloped area, and the bottom edge area of the wafer.
11. An electronic device, characterized in that, include: Memory, processor, and display screen; among which, The memory is configured to store program instructions; The processor is configured to execute program instructions stored in memory to: Obtain first information about each defect in a preset area of the wafer, the first information including the coordinates and size of the defect; According to a preset rule, the preset area of the wafer is divided into multiple sub-regions; The number of defects in each of the plurality of sub-regions is counted, and the representative size of the defects in each sub-region is calculated; the representative size includes the average size or the maximum size; Generate a first image, display the outline of the wafer in the first image, and display the number and representative size of defects in the corresponding sub-region at the position corresponding to each sub-region in the wafer outline; The display screen is configured to display the first image.
12. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, the processor performs the following method: Obtain first information about each defect in a preset area of the wafer, the first information including the coordinates and size of the defect; According to a preset rule, the preset area of the wafer is divided into multiple sub-regions; The number of defects in each of the plurality of sub-regions is counted, and the representative size of the defects in each sub-region is calculated; The representative dimensions include the average size or the maximum size; A first image is generated, in which the outline of the wafer is displayed, and the number and representative size of defects in each sub-region are displayed at the corresponding position in the wafer outline.