Texture recognition module, preparation method thereof and display device

Abstract

A texture recognition module (100) includes: a substrate (1); an optical sensing structure (2) located above the substrate (1) and within a texture recognition area (A); an optical path structure (3) located on a side of the optical sensing structure (2) away from the substrate (1), at least within the texture recognition area (A) and not covering a bonding area (C), the optical path structure (3) being configured to have a plurality of light-transmitting channels (Q) and light rays incident on the optical path structure (3) being able to pass only through the light-transmitting channels (Q); the optical path structure (3) includes: at least two light-shielding layers (31, 31a, 31b, 31c) arranged in layers and light-transmitting layers (32, 32a, 32b) located between every two adjacent light-shielding layers (31, 31a, 31b, 31c), a first light-transmitting hole (311a) arranged in an array is provided on the light-shielding layer (31a) closest to the optical sensing structure (2), a second light-transmitting hole (311b) corresponding to the first light-transmitting hole (311a) one by one is provided on the light-shielding layer (31b) farthest from the optical sensing structure (2), the first light-transmitting hole (311a) and the second light-transmitting hole (311b) corresponding thereto define the light-transmitting channel (Q), and the orthographic projections of the first light-transmitting hole (311a) and the second light-transmitting hole (311b) corresponding thereto on the substrate (1) do not overlap. A preparation method of a texture recognition module (100) and a display device.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a texture recognition module and a preparation method thereof, and a display device. Background Art

[0002] In the process of optical pattern recognition, the problem of ambient light interference will be encountered; especially when the ambient light is very strong, the intensity of the ambient light transmitted through the fingerprint will be much greater than the intensity of the detection light reflected by the fingerprint, which will make the fingerprint information recognized by the sensor based on the received light inaccurate, resulting in the inability to accurately obtain the fingerprint pattern information. Summary of the invention

[0003] The present disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes a texture recognition module, a preparation method thereof, and a display device.

[0004] In a first aspect, an embodiment of the present disclosure provides a texture recognition module, which is divided into a texture recognition area and a peripheral area located around the texture recognition area, wherein the peripheral area includes a binding area, including:

[0005] substrate;

[0006] An optical sensing structure is located on the substrate and in the texture recognition area;

[0007] an optical path structure, located on a side of the optical sensing structure away from the substrate, at least in the texture recognition area and not covering the binding area, wherein the optical path structure is configured to have a plurality of light-transmitting channels and light directed toward the optical path structure can only pass through the light-transmitting channels;

[0008] The optical path structure includes: at least two stacked light-shielding layers and a light-transmitting layer located between each two adjacent light-shielding layers, the light-shielding layer closest to the optical sensing structure is provided with first light-transmitting holes arranged in an array, and the light-shielding layer farthest from the optical sensing structure is provided with second light-transmitting holes corresponding to the first light-transmitting holes one by one, the first light-transmitting holes and the corresponding second light-transmitting holes define a light-transmitting channel, and the orthographic projection of the first light-transmitting hole on the substrate does not overlap with the orthographic projection of the corresponding second light-transmitting hole on the substrate.

[0009] In some embodiments, a line connecting the center of the first light-transmitting hole and the center of the second light-transmitting hole corresponding to the first light-transmitting hole constitutes a central axis of the defined light-transmitting channel, and the central axis forms an inclination angle θx with the normal of the plane where the substrate is located, and the value range of θx is: [40°, 72°].

[0010] In some embodiments, the collimating light-receiving angle θ of the optical path structure satisfies the following relationship: θ = arctan(X + d) / H - arctan(X - d) / H, where X is the distance between the center of the first light-transmitting hole and the orthographic projection on the substrate of the center of the second light-transmitting hole corresponding to the first light-transmitting hole, d is the aperture of the first light-transmitting hole and the second light-transmitting hole, and H is the distance between the first light-transmitting hole and the second light-transmitting hole in the direction perpendicular to the substrate.

[0011] In some embodiments, the value range of θ is: (0°, 60°].

[0012] In some embodiments, the aperture of the first light-transmitting hole is equal to the aperture of the second light-transmitting hole.

[0013] In some embodiments, the number of light-shielding layers in the optical path structure is 2 layers.

[0014] In some embodiments, the number of light-shielding layers in the optical path structure is greater than or equal to 3 layers. The at least two light-shielding layers include: a first light-shielding layer closest to the optical sensing structure, a second light-shielding layer farthest from the optical sensing structure, and at least one third light-shielding layer located between the first light-shielding layer and the second light-shielding layer;

[0015] A third light-transmitting hole corresponding to the first light-transmitting hole is provided on the third light-shielding layer, and the center of the third light-transmitting hole is located in the light-transmitting channel defined by the first light-transmitting hole and the second light-transmitting hole corresponding to the third light-transmitting hole.

[0016] In some embodiments, the period of the first light-transmitting holes on the first light-shielding layer, the period of the second light-transmitting holes on the second light-shielding layer, and the period of the third light-transmitting holes on the third light-shielding layer are the same;

[0017] The center of the first light-transmitting hole, the center of the second light-transmitting hole corresponding to the first light-transmitting hole, and the center of the third light-transmitting hole corresponding to the first light-transmitting hole are located on the same straight line.

[0018] In some embodiments, the aperture of the first light-transmitting hole, the aperture of the second light-transmitting hole, and the aperture of the third light-transmitting hole are the same.

[0019] In some embodiments, the number of the third light-shielding layers in the optical path structure is 1 layer.

[0020] In some embodiments, the light-transmitting layer between the third light-shielding layer and the first light-shielding layer is a first light-transmitting layer, the light-transmitting layer between the third light-shielding layer and the second light-shielding layer is a second light-transmitting layer, and the thickness of the first light-transmitting layer is greater than the thickness of the second light-transmitting layer.

[0021] In some embodiments, the light-transmitting layer between the third light-shielding layer and the first light-shielding layer is the first light-transmitting layer, and the light-transmitting layer between the third light-shielding layer and the second light-shielding layer is the second light-transmitting layer;

[0022] The aperture range of the first light-transmitting holes is: 2 um to 10 um, the period of the first light-transmitting holes is: 10 um to 100 um, the thickness range of the first light-transmitting layer is: 10 um to 20 um, and the thickness range of the second light-transmitting layer is 5 um to 15 um.

[0023] In some embodiments, the number of layers of the third light-shielding layer in the optical path structure is 2 or 3.

[0024] In some embodiments, the texture recognition area is divided into a photosensitive area, a spacer area, and a light-shielding area, and the spacer area is located between the photosensitive area and the light-shielding area;

[0025] The optical sensing structure is disposed in the photosensitive area and the light-shielding area and no pattern is disposed in the spacer area;

[0026] The orthographic projection of at least one layer of the light-shielding layer on the substrate completely covers the light-shielding area.

[0027] In some embodiments, the light-shielding area is located on one side or opposite sides or intersecting sides of the photosensitive area.

[0028] In some embodiments, the light-transmitting layer includes a transparent resin layer and a transparent inorganic insulating layer;

[0029] Between two adjacent light-shielding layers, the transparent resin layer is adjacent to the light-shielding layer closer to the substrate, and the transparent inorganic insulating layer is adjacent to the light-shielding layer farther from the substrate.

[0030] In some embodiments, the light-shielding layer extends from the texture recognition area to the adjacent edge of the peripheral area;

[0031] The orthographic projection of the transparent resin layer on the substrate completely covers the orthographic projection of the adjacent light-shielding layer on the substrate;

[0032] The orthographic projection of the transparent inorganic insulating layer on the substrate completely covers and is larger than the orthographic projection of the adjacent transparent resin layer on the substrate.

[0033] In some embodiments, the optical path structure further includes a retaining wall structure, the retaining wall structure is disposed around the transparent resin layer, and the light-shielding layer adjacent to the transparent resin layer is independently disposed in the same film layer.

[0034] In some embodiments, the optical sensing structure includes a plurality of optical sensors arranged in an array. One optical sensor corresponds to a plurality of the first light-transmitting holes, and one first light-transmitting hole corresponds to one optical sensor.

[0035] In some embodiments, the orthographic projection of the optical sensor on the substrate is a square with a side length of D, and the period of the first light-transmitting hole is P. D and P satisfy the following relationship: D = N*P, where N is a positive even number.

[0036] In some embodiments, the value range of D is 10um to 200um.

[0037] In some embodiments, the optical sensing structure includes a gate, a gate insulating layer, an active layer, source-drain electrodes, a first insulating layer, a first electrode, a semiconductor layer, a second electrode, a protective layer, a second insulating layer, a passivation layer, a bias voltage line, and a barrier layer, which are sequentially stacked in a direction away from the substrate.

[0038] In some embodiments, the orthographic projection of the source-drain electrodes on the substrate completely covers and is larger than the orthographic projection of the first electrode on the substrate.

[0039] In some embodiments, the source-drain electrodes are in direct contact with the semiconductor layer, and the source-drain electrodes and the first electrode are located in the same film layer.

[0040] In some embodiments, it further includes a planarization layer located between the optical path structure and the optical sensing structure. The planarization layer is provided over the entire surface and has a hollow pattern only in the bonding region.

[0041] In some embodiments, it further includes a ground shielding layer located between the planarization layer and the optical sensing structure;

[0042] The ground shielding layer is adjacent to the planarization layer, and the pattern of the ground shielding layer is covered by the pattern of the planarization layer. The orthographic projection of the ground shielding layer on the substrate covers the optical sensing structure.

[0043] In some embodiments, it further includes a bonding electrode located in the bonding region. The bonding electrode and the bias voltage line are in the same film layer.

[0044] In some embodiments, the bonding region includes a gate driver chip bonding region, and the bonding electrode located in the gate driver chip bonding region includes a first bonding electrode;

[0045] There is a first connection electrode located in the film layer where the gate is located, a second connection electrode located in the film layer where the source-drain electrodes are located, and a third connection electrode located in the film layer where the first electrode is located between the first bonding electrode and the substrate;

[0046] The first connection electrode is electrically connected to the second connection electrode through a first via hole penetrating the gate insulating layer. The second connection electrode is electrically connected to the third connection electrode through a second via hole penetrating the first insulating layer. The third connection electrode is electrically connected to the first bonding electrode through a third via hole penetrating the passivation layer. The first connection electrode is electrically connected to the gate electrode through a gate line and a gate line fan-out wiring.

[0047] In some embodiments, the number of the first via holes, the second via holes, and the third via holes corresponding to one first bonding electrode is at least two. The orthographic projections of the first via holes, the second via holes, and the third via holes on the substrate do not overlap each other and are alternately arranged along the extending direction of the first bonding electrode.

[0048] In some embodiments, the bonding region further includes a data driver chip bonding region. The bonding electrodes located in the data driver chip bonding region include a second bonding electrode and a third bonding electrode.

[0049] There is a fourth connection electrode located in the film layer where the source-drain electrodes are located between the second bonding electrode and the substrate, and a fifth connection electrode located in the film layer where the first electrode is located. The fourth connection electrode is electrically connected to the fifth connection electrode through a fourth via hole penetrating the first insulating layer. The fifth connection electrode is electrically connected to the second bonding electrode through a fifth via hole penetrating the passivation layer. The fourth connection electrode is electrically connected to the source-drain electrodes through a data line and a data line fan-out wiring.

[0050] The third bonding electrode is electrically connected to the bias voltage line through a bias voltage fan-out wiring.

[0051] In some embodiments, a light filtering layer is provided on the side of the semiconductor layer away from the substrate. The light filtering layer is configured such that the central wavelength of the light transmitted through the light filtering layer is less than 600 nm.

[0052] In some embodiments, the light filtering layer is configured to transmit light with a wavelength in the range of 480 nm to 580 nm.

[0053] In some embodiments, the material of the second insulating layer includes: a resin material having a light filtering function. The light filtering layer and the second insulating layer are multiplexed and combined into the same film layer.

[0054] And / or, the material of the barrier layer includes: a resin material having a light filtering function. The light filtering layer and the barrier layer are multiplexed and combined into the same film layer.

[0055] And / or, the light-transmitting layer includes a transparent resin layer and a transparent inorganic insulating layer. Between two adjacent light-shielding layers, the transparent resin layer is adjacent to the light-shielding layer closer to the substrate side, and the transparent inorganic insulating layer is adjacent to the light-shielding layer farther from the substrate side. The material of the transparent resin layer includes: a resin material with a light-filtering function, and the light-filtering layer and the transparent resin layer are multiplexed and combined into the same film layer.

[0056] In a second aspect, an embodiment of the present disclosure further provides a display device, which includes the texture recognition module according to any one of claims 1-33, and a display panel located above the texture recognition module. The display panel and the texture recognition module are fixed by an optical adhesive.

[0057] In some embodiments, the display panel is an OLED display panel, and the OLED display panel includes an OLED display backplane, a polarizer, and a protective cover plate that are sequentially stacked in a direction away from the texture recognition module. The material of the protective cover plate includes polyimide.

[0058] In some embodiments, the thickness of the OLED display panel ranges from 0.2 mm to 1.5 mm.

[0059] In some embodiments, the thickness of the OLED display panel ranges from 0.4 mm to 0.65 mm.

[0060] In some embodiments, it further includes: a middle frame, the middle frame includes a bottom plate and side walls formed by bending the edge of the bottom plate towards the front side. The bottom plate and the side walls form a receiving groove, and the texture recognition module and the display panel are fixed in the receiving groove, and the display panel is located on the side of the texture recognition module away from the bottom plate.

[0061] In some embodiments, the texture recognition module is fixed on the bottom plate;

[0062] And / or, a stepped support structure is formed on the side wall, and the display panel is fixed on the stepped support structure.

[0063] In some embodiments, a through hole is formed on the bottom plate, and the display device further includes: a flexible circuit board for texture recognition and a chip for texture recognition;

[0064] The flexible circuit board for texture recognition passes through the through hole, one end of which is electrically connected to the bonding electrode in the bonding area in the texture recognition module, and the other end is electrically connected to the chip for texture recognition located on the back surface of the bottom plate.

[0065] In a third aspect, embodiments of the present disclosure further provide a method for manufacturing the texture recognition module described in the first aspect. The texture recognition module is divided into a texture recognition area and a peripheral area located around the texture recognition area. The peripheral area includes a bonding area. Wherein, the manufacturing method includes:

[0066] Providing a substrate;

[0067] Forming an optical sensing structure on the substrate and within the texture recognition area;

[0068] Forming an optical path structure on the optical sensing structure. The optical path structure is at least within the texture recognition area and does not cover the bonding area. The optical path structure is configured to have a plurality of light-transmitting channels, and the light incident on the optical path structure can only pass through the light-transmitting channels. The optical path structure includes at least two light-shielding layers arranged in a stacked manner and a light-transmitting layer located between every two adjacent light-shielding layers. The light-shielding layer closest to the optical sensing structure is provided with first light-transmitting holes arranged in an array, and the light-shielding layer farthest from the optical sensing structure is provided with second light-transmitting holes corresponding one-to-one to the first light-transmitting holes. The first light-transmitting holes and their corresponding second light-transmitting holes define the light-transmitting channels, and the orthographic projections of the first light-transmitting holes and their corresponding second light-transmitting holes on the substrate do not overlap.

[0069] In some embodiments, the step of forming the light-shielding layer during the process of forming the optical path structure includes:

[0070] Forming a light-shielding material thin film;

[0071] Processing the light-shielding material thin film through a photolithography process or a nanoimprint process to form light-transmitting holes on the light-shielding material thin film.

[0072] In some embodiments, the step of forming the light-transmitting layer during the process of forming the optical path structure includes:

[0073] Forming a transparent resin layer on the light-shielding layer by an inkjet printing process;

[0074] Forming a transparent inorganic insulating layer covering the transparent resin layer on the transparent resin layer by a low-temperature chemical vapor deposition process. Description of the Drawings

[0075] Figure 1a It is a schematic diagram of external ambient light entering the display panel and the light emitted by the display panel being reflected on the fingerprint surface;

[0076] Figure 1b It is a schematic diagram of the angle-light intensity curve of strong ambient light incident on the display panel and the detected light reflected by the fingerprint;

[0077] Figure 1cSchematic diagram of the angle-light intensity curve of the weak ambient light incident on the display panel and the detection light reflected by the fingerprint;

[0078] Figure 2a Schematic diagram of a structure of the texture recognition module provided by an embodiment of the present disclosure;

[0079] Figure 2b Another schematic diagram of a structure of the texture recognition module provided by an embodiment of the present disclosure;

[0080] Figure 2c Another schematic diagram of a structure of the texture recognition module provided by an embodiment of the present disclosure;

[0081] Figure 2d For Figure 2b A schematic diagram of a structure of the optical path structure in;

[0082] Figure 3a Schematic diagram of a structure of an optical sensor in the texture recognition module provided by an embodiment of the present disclosure;

[0083] Figure 3b Another schematic diagram of a structure of an optical sensor in the texture recognition module provided by an embodiment of the present disclosure;

[0084] Figure 3c Another schematic diagram of a structure of an optical sensor in the texture recognition module provided by an embodiment of the present disclosure;

[0085] Figure 3d Top view schematic diagram of an optical sensor in the texture recognition module provided by an embodiment of the present disclosure;

[0086] Figure 3e Another schematic diagram of a structure of an optical sensor in the texture recognition module provided by an embodiment of the present disclosure;

[0087] Figure 4 Schematic diagram of an arrangement of light-transmitting holes in the texture recognition module provided by an embodiment of the present disclosure;

[0088] Figure 5 Another schematic diagram of an arrangement of the light-transmitting holes in the texture recognition module provided by an embodiment of the present disclosure;

[0089] Figure 6 Another schematic diagram of a structure of the texture recognition module provided by an embodiment of the present disclosure;

[0090] Figure 7 Top view schematic diagram of the texture recognition module provided by an embodiment of the present disclosure;

[0091] Figure 8a Another top view schematic diagram of the texture recognition module provided by an embodiment of the present disclosure;

[0092] Figure 8b Another top view schematic diagram of the texture recognition module provided by the embodiment of the present disclosure;

[0093] Figure 8c Another top view schematic diagram of the texture recognition module provided by the embodiment of the present disclosure;

[0094] Figure 8d Another top view schematic diagram of the texture recognition module provided by the embodiment of the present disclosure;

[0095] Figure 9 Partial top view schematic diagram of the texture recognition area in the texture recognition module provided by the embodiment of the present disclosure;

[0096] Figure 10a Another structural schematic diagram of the texture recognition module provided by the embodiment of the present disclosure;

[0097] Figure 10b Another structural schematic diagram of the texture recognition module provided by the embodiment of the present disclosure;

[0098] Figure 10c Structural schematic diagram of the gate drive bonding area in the texture recognition module provided by the embodiment of the present disclosure;

[0099] Figure 10d Another structural schematic diagram of the texture recognition module provided by the embodiment of the present disclosure;

[0100] Figure 10e Another structural schematic diagram of the texture recognition module provided by the embodiment of the present disclosure;

[0101] Figure 10f Corresponding relationship between the wavelength and excitation rate of the pigment light excited by the finger when ambient light passes through the finger in the embodiment of the present disclosure;

[0102] Figure 10g Schematic diagram of the light transmittance of a filter layer provided by the embodiment of the present disclosure.

[0103] Figure 11 A structural schematic diagram of the display device provided by the embodiment of the present disclosure;

[0104] Figure 12 Another structural schematic diagram of the display device provided by the embodiment of the present disclosure;

[0105] Figure 13 Another structural schematic diagram of the display device provided by the embodiment of the present disclosure;

[0106] Figure 14 Another structural schematic diagram of the display device provided by the embodiment of the present disclosure;

[0107] Figure 15a Another schematic structural diagram of the display device provided by the embodiment of the present disclosure;

[0108] Figure 15b Another schematic structural diagram of the display device provided by the embodiment of the present disclosure;

[0109] Figure 15c is Figure 15a and Figure 15b A schematic back view of the middle bottom plate;

[0110] Figure 16 A schematic flow chart of a method for preparing a texture recognition module provided by the embodiment of the present disclosure. Detailed implementation manners

[0111] To enable those skilled in the art to better understand the technical solutions of the present disclosure, a texture recognition module, a method for preparing the same, and a display device provided by the present disclosure will be described in detail below with reference to the accompanying drawings.

[0112] Hereinafter, example embodiments will be described more fully with reference to the accompanying drawings. However, the example embodiments may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. The shapes and sizes of the components in the drawings do not reflect the actual scale and are only intended to illustrate the content of the present disclosure.

[0113] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. As used herein, the singular forms "a" and "the" are also intended to include the plural forms unless the context clearly indicates otherwise. It will also be understood that when the terms "comprises" and / or "is made of" are used in this specification, the specified features, wholes, steps, operations, elements, and / or components are present, but one or more other features, wholes, steps, operations, elements, components, and / or groups thereof are not excluded. Without conflict, the embodiments of the present disclosure and the features in the embodiments may be combined with each other.

[0114] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted as having an idealized or overly formal meaning unless clearly defined herein.

[0115] See Figure 1aAs shown, a display device with a texture recognition function generally includes a display panel 200 and an optical sensing structure 2. When performing texture recognition, a fingerprint comes into contact with the surface of the display panel 200, and the detection light emitted by the light-emitting device 200a in the display panel 200 is reflected by the fingerprint surface and then directed towards the optical sensing structure. Each optical sensor in the optical sensing structure will identify the valleys and ridges of the fingerprint at the corresponding position based on the received light (the detection light reflected by the fingerprint surface).

[0116] Among the detection light directed towards the optical sensing structure, the greater the incident angle, the smaller the light intensity. Here, the incident angle refers to the angle formed by the light ray and the normal line (perpendicular to the plane where the display panel is located) of the plane where the display panel is located.

[0117] In the related art, considering the factors that the detection light perpendicularly incident on the optical sensing structure is the strongest and the light intensity of the detection light decreases as the incident angle increases, an optical path structure is generally provided between the optical sensing structure and the display panel. The optical path structure is configured to have multiple light-transmitting channels, and the light directed towards the optical path structure can only pass through the light-transmitting channels; the extending direction of the light-transmitting channels is perpendicular to the plane where the display panel is located, so that the incident angle of the light passing through the light-transmitting channels and directed towards the optical sensing structure is a small angle within 0° to 10°, so that the optical sensor can receive stronger detection light. However, it is found in actual applications that when the ambient light is strong, the strong ambient light will enter the display panel and be directed towards the optical sensing structure through the light-transmitting channels on the optical path structure, thus interfering with fingerprint detection.

[0118] See Figure 1a As shown, there are three ways for ambient light to enter the display panel: 1) directly enter the display panel through the surface refraction of the display panel without passing through the finger, and this part of the light is called "side ambient light"; 2) pass through the finger and enter the display panel surface at a large incident angle and finally enter the display panel, and this part of the light is called "side transmitted ambient light"; (3) pass through the finger and enter the display panel surface at a small incident angle (perpendicular or approximately perpendicular to the surface of the display panel) and finally enter the display panel, and this part of the light is called "front transmitted ambient light". After research, it is found that whether it is side ambient light, side transmitted ambient light or front transmitted ambient light, the incident angle after entering the display panel is always between 0° and 50°; in addition, the incident angle of the detection light used for texture detection is between 0 and 72°.

[0119] See Figure 1bAs shown in the figure, after research, it is found that the ambient light incident into the display panel also meets the characteristic that the greater the incident angle, the smaller the light intensity, and in the small angle range of 0° to 10°, the light intensity of the ambient light is always greater than the light intensity of the detection light. Therefore, in the prior art, the incident angle of the light incident on the optical sensing structure is limited to a small angle of 10° through the optical path structure. Although a stronger detection light can be received, a stronger ambient light will also be received at the same time. At this time, the stronger ambient light will have a greater interference on the texture recognition result, seriously affecting the accuracy of the texture recognition result.

[0120] In order to solve the technical problem of inaccurate pattern recognition results under ambient light in the related art, the present disclosure provides a pattern recognition module for fingerprint, palm print and other biometric identification and detection. Figures 2a to 2d As shown, it includes a texture recognition area A and a peripheral area B located around the texture recognition area A, and the peripheral area B includes a binding area C, wherein the texture recognition module includes:

[0121] Substrate 1: Specifically, the material of substrate 1 can be PI, glass or other materials.

[0122] The optical sensing structure 2 is located on the substrate 1 and within the texture recognition area A.

[0123] The optical path structure 3 is located on the side of the optical sensing structure 2 facing away from the substrate 1, at least within the texture recognition area A and not covering the binding area C. The optical path structure 3 is configured to have multiple light-transmitting channels Q and the light directed to the optical path structure 3 can only pass through the light-transmitting channels Q.

[0124] The optical path structure 3 includes at least two light-shielding layers stacked and a light-transmitting layer 32 located between each two adjacent light-shielding layers. Among the at least two light-shielding layers, the light-shielding layer closest to the optical sensing structure 2 is the first light-shielding layer 31a, and the light-shielding layer farthest from the optical sensing structure 2 is the second light-shielding layer 31b; the first light-shielding layer is provided with a plurality of first light-transmitting holes 311a arranged in an array, and the second light-shielding layer 31b is provided with second light-transmitting holes 311b corresponding to the first light-transmitting holes 311a one by one; wherein a first light-transmitting hole 311a and a corresponding second light-transmitting hole 311b define a light-transmitting channel Q, and the orthographic projection of the first light-transmitting hole 311a on the substrate 1 does not overlap with the orthographic projection of the corresponding second light-transmitting hole 311b on the substrate 1.

[0125] In an embodiment of the present disclosure, a first light-transmitting hole 311a and a corresponding second light-transmitting hole 311b define a light-transmitting channel Q, which specifically means: a channel formed by allowing light to pass through the first through-hole and a corresponding second through-hole. Among them, the connection line between the center of the first light-transmitting hole 311a and the center of the second light-transmitting hole 311b corresponding to the first light-transmitting hole forms the central axis CL of the defined light-transmitting channel Q. The central axis CL is a virtual line and not a real existing structure. In the present disclosure, the second light-transmitting hole 311b serves as the light incident port of the light-transmitting channel Q, and the first light-transmitting hole 311a serves as the light exit port of the light-transmitting channel Q.

[0126] The light-transmitting channel Q can collimate the light at various angles incident on the second light-transmitting hole 311b, so that the light emitted from the first light-transmitting hole 311a is within a preset small light exit angle range. The difference between the maximum angle and the minimum angle in this small light exit angle range is the light collection angle θ of the light-transmitting channel.

[0127] In an embodiment of the present disclosure, by adjusting the inclination angle θx formed by the central axis CL of the light-transmitting channel Q and the normal line of the plane where the substrate 1 is located, the distance H between the first light-shielding layer 31a and the second light-shielding layer 31b, and the aperture d size of the first light-transmitting hole 311a / second light-transmitting hole 311b, the aspect ratio of the required light-transmitting channel Q is adjusted, the light collection angle θ of the optical path structure is defined, and the required collimation effect is achieved, so that the information of the valleys and ridges of the pattern can be accurately obtained. And, the aperture sizes of the first light-transmitting holes 311a on the first light-shielding layer 31a and the second light-transmitting holes 311b on the second light-shielding layer 31b generally need to be set the same to ensure the required light collection angle θ.

[0128] In the present disclosure, since the orthographic projections of the first light-transmitting hole 311a and the corresponding second light-transmitting hole 311b on the substrate 1 do not overlap, the central axis CL of the light-transmitting channel Q defined by the first light-transmitting hole 311a and the corresponding second light-transmitting hole 311b is not perpendicular to the substrate 1 (that is, the central axis of the light-transmitting channel Q is greater than 0° with respect to the normal line of the plane where the substrate 1 is located), and the light with an incident angle of 0° and close to 0° cannot pass through the light-transmitting channel Q.

[0129] When performing pattern recognition under strong ambient light, refer to Figure 1b As shown, since the high-brightness ambient light with an incident angle of 0° and close to 0° in the display panel cannot pass through the optical path structure 3, the light intensity of the ambient light reaching the optical sensing structure 2 will be significantly reduced, which is beneficial to improving the accuracy of pattern recognition.

[0130] It should be noted that although the optical path structure 3 also blocks the detection light with an incident angle of 0° and close to 0°, resulting in a decrease in the light intensity of the detection light received by the optical sensing structure 2, the percentage decrease in the light intensity of the ambient light is greater than that of the detection light. Therefore, the proportion of the detection light in the light received by the optical sensing structure 2 will increase, which is beneficial to improving the accuracy of fingerprint recognition.

[0131] When performing fingerprint recognition under weak ambient light, refer to Figure 1c As shown, although the setting of the optical path structure 3 causes the overall light intensity decrease of the detection light to be greater than that of the ambient light, since the light intensity of the detection light at each angle is always greater than that of the ambient light, the proportion of the detection light in the light received by the optical sensing structure 2 always remains at a relatively large value, and the fingerprint recognition result still has a high accuracy.

[0132] Figure 1b The abscissa of the intersection point of the angle-light intensity curve corresponding to the strong ambient light passing through the fingerprint and the angle-light intensity curve of the detection light reflected by the fingerprint in [[ ]] is α, and the abscissa of the intersection point of the angle-light intensity curve of the detection light reflected by the fingerprint and the horizontal axis is β. When designing the light-transmitting channel Q of the optical path structure 3, the inclination angle θx formed by the central axis CL of the light-transmitting channel Q and the normal line of the plane where the substrate 1 is located should be made to be between α and β as much as possible, so as to improve the interference of the external ambient light and achieve accurate fingerprint recognition.

[0133] Through pre-data acquisition and analysis, it is found that α is generally around 40° - 50°, and the maximum angle of the detection light reflected by the fingerprint is about 72°. Based on the above data acquisition and analysis results, in the embodiments of the present disclosure, the value range of the inclination angle θx formed by the central axis CL of the light-transmitting channel Q and the normal line of the plane where the substrate 1 is located is: [40°, 72°].

[0134] In addition, the signal emitted by the light-emitting element (generally an OLED device) in the display panel follows a Lambert distribution, and the light intensity decreases with the increase of the angle. To ensure that the signal received by the optical sensor in the optical sensing structure 2 is stronger, θx should be as close to α as possible. Of course, θx can be appropriately adjusted according to different application requirements. In some embodiments, the inclination angle θx of the light-transmitting channel Q in the optical path structure 3 and the collimating light-receiving angle θ satisfy the following relationship:

[0135] θx = arctan(X / H)

[0136] θ = arctan((X + d) / H) - arctan((X - d) / H)

[0137] Wherein, X is the distance between the center of the first light-transmitting hole 311a and the orthographic projection on the substrate 1 of the center of the second light-transmitting hole 311b corresponding to the first light-transmitting hole 311a, d is the aperture of the first light-transmitting hole 311a and the second light-transmitting hole 311b, and H is the distance between the first light-transmitting hole 311a and the second light-transmitting hole 311b in the direction perpendicular to the substrate 1. In some embodiments, the value range of θ is (0°, 60°].

[0138] See Figure 2a As shown, in some embodiments, the number of light-shielding layers in the optical path structure 3 is 2 layers, namely the first light-shielding layer 31a and the second light-shielding layer 31b.

[0139] See Figure 2b and Figure 2c As shown, in some embodiments, the number of light-shielding layers in the optical path structure 3 is greater than 2 layers, that is, the light-shielding layers in the optical path structure 3 not only include the first light-shielding layer 31a and the second light-shielding layer 31b, but also include at least one third light-shielding layer 31c located between the first light-shielding layer 31a and the second light-shielding layer 31b. A third light-transmitting hole 311c corresponding to the first light-transmitting hole 311a is provided on the third light-shielding layer 31c, and the center of the third light-transmitting hole 311c is located in the light-transmitting channel Q defined by the first light-transmitting hole 311a corresponding to the third light-transmitting hole 311c and the second light-transmitting hole 311b.

[0140] In Figure 2a In the optical path structure 3 with 2 layers of light-shielding layers shown, when the incident angle of the light incident on the optical path structure 3 is large and the period P of the first light-transmitting hole 311a / second light-transmitting hole 311b on the first light-shielding layer 31a / second light-shielding layer 31b is small, among the light passing through the second light-transmitting hole 311b, there may be some light rays incident on the first light-transmitting hole 311a not corresponding to the second light-transmitting hole 311b (for example, other first light-transmitting holes 311a adjacent to the first light-transmitting hole 311a corresponding to the second light-transmitting hole 311b) and emitted, thus causing a light crosstalk problem. When the aperture of the first light-transmitting hole 311a and the second light-transmitting hole 311b and the collimating and light-collecting angle θ of the optical path structure 3 have been set, in order to avoid the light crosstalk problem, it is often only possible to increase the period P of the first light-transmitting hole 311a / second light-transmitting hole 311b on the first light-shielding layer 31a / second light-shielding layer 31b; however, the increase in the period P will result in a decrease in the number of the first light-shielding layer 31a and the second light-shielding layer 31b, and also a decrease in the number of light-transmitting channels Q, and the light intensity received by the optical sensing structure 2 decreases, which is not conducive to pattern recognition. It should be noted that the "period" of the holes in the embodiments of the present disclosure specifically refers to the distance between the centers of two adjacent holes on the same film layer.

[0141] In an embodiment of the present disclosure, by providing at least one third light-shielding layer 31c between the first light-shielding layer 31a and the second light-shielding layer 31b, the third light-shielding layer 31c is configured to block light that passes through the second light-transmitting hole 311b and is directed towards other light-transmitting holes except the corresponding first light-transmitting hole 311a, without affecting the light transmission amount of the light-transmitting channel Q defined by the first light-transmitting hole 311a and the second light-transmitting hole 311b. Thus, the problem of light crosstalk can be effectively avoided, and the accuracy of the recognized texture information can be improved. At the same time, by providing the third light-shielding layer 31c to avoid the problem of light crosstalk, the period P of the first light-transmitting hole 311a / second light-transmitting hole 311b on the first light-shielding layer 31a / second light-shielding layer 31b can be correspondingly reduced, the number of the first light-transmitting hole 311a / second light-transmitting hole 311b on the first light-shielding layer 31a / second light-shielding layer 31b can be correspondingly increased, the number of the light-transmitting channels Q can also be increased, and the light intensity received by the optical sensing structure 2 is increased, which is beneficial to texture recognition.

[0142] To avoid the third light-shielding layer 31c from affecting the light transmission amount of the light-transmitting channel defined by the first light-transmitting hole 311a and the second light-transmitting hole 311b, the aperture of the third light-transmitting hole 311c on the third light-shielding layer 31c is generally greater than or equal to the aperture of the first light-transmitting hole 311a corresponding to the third light-transmitting hole 311c; however, the larger the aperture of the third light-transmitting hole 311c is, the smaller the light-shielding range of the third light-shielding layer 31c is, and the greater the risk of light crosstalk is at this time. In practical applications, the aperture size value of the third light-transmitting hole 311c relative to the aperture of the first light-transmitting hole 311a / second light-transmitting hole 31b can be 20% to 50% larger, and the aperture of the third light-transmitting hole 311c can be designed and adjusted according to different scenario requirements.

[0143] In some embodiments, the apertures of the first light-transmitting hole 311a, the second light-transmitting hole 311b, and the third light-transmitting hole 311c are equal.

[0144] In some embodiments, the periods of the first light-transmitting hole 311a on the first light-shielding layer 31a, the second light-transmitting hole 311b on the second light-shielding layer 31b, and the third light-transmitting hole 311c on the third light-shielding layer 31c are equal; the center of the first light-transmitting hole 311a, the center of the second light-transmitting hole 311b corresponding to the first light-transmitting hole 311a, and the center of the third light-transmitting hole 311c corresponding to the first light-transmitting hole 311a are located on the same straight line (the central axis of the light-transmitting channel).

[0145] See Figure 2cAs shown, in the embodiments of the present disclosure, the number of layers of the third light-shielding layer 31c can also be 2 layers or even multiple layers. In principle, the more the number of the third light-shielding layers 31c, the better the performance of preventing light crosstalk of the structure formed by the multiple third light-shielding layers 31c. At this time, the period P of the first light-transmitting holes 311a / second light-transmitting holes 311b on the first light-shielding layer 31a / second light-shielding layer 31b can be set smaller; however, the more the number of the third light-shielding layers 31c, the more processes are required for preparing the third light-shielding layer 31c and the light-transmitting layer 32, and the longer the preparation period of the product. Considering the performance of preventing light crosstalk and the preparation processes, the number of layers of the third light-shielding layer 31c in the embodiments of the present disclosure is less than or equal to 3 layers.

[0146] As a specific example, referring to Figure 2d As shown, the number of layers of the third light-shielding layer 31c is 1 layer. The light-transmitting layer 32 between the third light-shielding layer 31c and the first light-shielding layer 31a is the first light-transmitting layer 32a, and the light-transmitting layer 32 between the third light-shielding layer 31c and the second light-shielding layer 31b is the second light-transmitting layer 32b. The thickness H1 of the first light-transmitting layer 32a is greater than the thickness H2 of the second light-transmitting layer 32b.

[0147] In some embodiments, the apertures d of the first light-transmitting holes 311a, second light-transmitting holes 311b, and third light-transmitting holes 311c are equal and in the range of: 2um to 10um. The periods P of the first light-transmitting holes 311a, second light-transmitting holes 311b, and third light-transmitting holes 311c are equal and in the range of: 10um to 100um. The thickness H1 of the first light-transmitting layer 32a is in the range of: 10um to 20um, and the thickness H2 of the second light-transmitting layer 32b is in the range of 5um to 15um.

[0148] The distance between the center of the first light-transmitting hole 311a and the center of the third light-transmitting hole 311c corresponding to the first light-transmitting hole 311a in the orthographic projection on the substrate 1 is t. The distance between the center of the first light-transmitting hole 311a and the center of the second light-transmitting hole 311b corresponding to the first light-transmitting hole 311a in the orthographic projection on the substrate 1 is X. t and X satisfy: t / X = H1 / H = H1 / (H1 + H2).

[0149] As an example, the inclination angle θx of the central axis CL of the light-transmitting through-hole is 45°. The aperture d of the light-transmitting holes 311a, 311b, and 311c on each of the light-shielding layers 31a, 31b, and 31c is 6um. The period P of the light-transmitting holes 311a, 311b, and 311c on each of the light-shielding layers 31a, 31b, and 31c is 50um. The thickness H1 of the first light-transmitting layer 32a is 15um, and the thickness H2 of the second light-transmitting layer 32b is 10um.

[0150] The θ can be obtained by the formula θ = arctan(X + d) / H - arctan(X - d) / H, and θ≈10°.

[0151] The value of X can be obtained through the formula X = H * tanθx, and X = 25 μm.

[0152] The value of t can be obtained through the formula t = X * H1 / H, and t = 14 μm.

[0153] In the above-mentioned texture recognition module provided by the embodiments of the present disclosure, after the optical sensing structure 2 is fabricated on the substrate 1, at least two layers of light-shielding layers and light-transmitting layers with relatively simple structures can be directly fabricated to achieve a good collimation effect. Moreover, the device structure is relatively thin and light, which can reduce the processing difficulty of the device. It can avoid problems such as blistering that affect the yield rate caused by the method of bonding the optical path structure with optical glue (OCA) on the texture recognition module. Furthermore, since the film layer is directly fabricated on the optical sensing structure 2 to form the optical path structure 3, the optical path structure 3 can be fabricated using general equipment for fabricating film layers on the array substrate without adding new fabrication equipment.

[0154] In the above-mentioned texture recognition module provided by the embodiments of the present disclosure, refer to Figures 2a to 2c As shown, the optical sensing structure 2 is generally only arranged in the texture recognition area A (generally corresponding to the display area in the display panel). Wiring led out from the texture recognition area A is arranged in the peripheral area B, and bonding electrodes 7 are arranged in the bonding area C. The surface of the bonding electrodes 7 needs to be exposed for fixing with the driving chip. Since the function of the optical path structure 3 is to collimate the light obtained by the optical sensing structure 2, the film layer of the optical path structure 3 needs to cover the optical sensing structure 2 and avoid covering the bonding electrodes 7 in the bonding area C.

[0155] In the above-mentioned texture recognition module provided by the embodiments of the present disclosure, refer to Figures 3a to 3dAs shown, the optical sensing structure 2 includes a plurality of optical sensors 21 arranged in an array, and driving transistors 22 for driving the optical sensors 21. Among them, the optical sensors include PIN photodiodes and PN photosensitive diodes. The PIN photodiode includes a second electrode 213, a first electrode 211, and a semiconductor layer 212 located between the second electrode 213 and the first electrode 211. The first electrode 211 is electrically connected to the driving transistor 22, so that the driving transistor 22 can control the voltage applied to the first electrode 211, and further control the working state of the optical sensor 21. The semiconductor layer 212 includes a stacked P-type semiconductor layer and an N-type semiconductor layer (such as an N-type Si layer), or includes a stacked P-type semiconductor layer (such as a P-type Si layer), an intrinsic semiconductor layer (such as an intrinsic Si layer), and an N-type semiconductor layer (such as an N-type Si layer). For example, the I layer is made of a-Si material, the P layer is a-Si doped with B ions, and the N layer is a-Si doped with P ions. In some embodiments, the second electrode 213 is a transparent electrode, and materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and gallium zinc oxide (GZO) and other transparent metal oxides can be used. The first electrode 211 is a metal electrode, and metal materials such as copper (Cu), aluminum (Al), and titanium (Ti) or alloy materials are used. The driving transistor 22 includes a gate 221, a gate insulating layer 222, an active layer 223, and source / drain electrodes 224 (including a source electrode and a drain electrode arranged at intervals).

[0156] It should be noted that in the embodiments of the present disclosure, a structure being "transparent" means that the structure can transmit light, rather than meaning that the light transmittance of the structure is 100%.

[0157] Specifically, the optical sensing structure 2 on the substrate 1 includes a gate 221, a gate insulating layer 222, an active layer 223, source / drain electrodes 224, a first insulating layer 225, a first electrode 211, a semiconductor layer 212, a second electrode 213, a protective layer 231 (generally a transparent insulating material), a second insulating layer 232, a passivation layer 233, a bias voltage line 234, and a barrier layer 235, which are sequentially stacked. Moreover, the source / drain electrodes extend to one side of the PIN, and the orthographic projection of the source / drain electrodes 224 on the substrate 1 can completely cover and be larger than the orthographic projection of the first electrode 211 on the substrate 1 to increase the photosensitive area. Correspondingly, the process of fabricating each film mask in the texture recognition area A includes: gate 221 → gate insulating layer 222 → active layer 223 → source / drain electrodes 224 → first insulating layer 225 → first electrode 211 → PIN 212 → second electrode 213 → second insulating layer 232 → passivation layer 233 → bias voltage line 234 → barrier layer 235, etc. Among them, a pattern of a data line 224' is also set in the film layer where the source / drain electrodes 224 are located, and the second insulating layer 232 and the passivation layer 233 can be respectively subjected to a patterning process, so the via hole sizes on the two are different. Figure 3dA top view schematic diagram of an optical sensor 21 and a driving transistor 22, from which it can be seen that the via 233b on the passivation layer 233 is larger than the via 232b on the second insulating layer 232. The structure of the optical sensing structure 2 is not limited to Figure 3a the specific structure shown, and reference can also be made to Figure 3b shown, the source-drain 224 and the first electrode are multiplexed and combined into the same film layer, that is, the source-drain 224 and the first electrode can be integrally formed, that is, the source-drain extends to the PIN side and is multiplexed as the first electrode of the PIN.

[0158] In the embodiment of the present disclosure, one optical sensor 21 corresponds to multiple first light-transmitting holes 311a, and one first light-transmitting hole 311a corresponds to one optical sensor 21. The light emitted from the first light-transmitting hole 311a will be incident on the corresponding optical sensor 21.

[0159] In some embodiments, the orthographic projection of the optical sensor 21 on the substrate 1 is a square with a side length of D, and the period of the first light-transmitting hole 311a is P. D and P satisfy the following relationship: D = N*P, where N is a positive even number. This setting can make the number of first light-transmitting holes 311a (light-transmitting channels CL) corresponding to each optical sensor 2 equal, so as to ensure the uniformity of the light received by each optical sensor 2.

[0160] In some embodiments, due to the limitations of the manufacturing process, the value range of D is 10um to 200um, the PPI of the optical sensor 21 is generally 200 to 500, and the value range of the period P of the light-transmitting holes on the light-shielding film in the optical path structure 3 is 10um to 100um; therefore, one optical sensor 21 corresponds to multiple light-transmitting holes in each light-shielding layer, for example, corresponding to several to hundreds of light-transmitting holes.

[0161] See Figure 4 shown, the light-transmitting holes 311 in the light-shielding layer 31 can be arranged in a matrix manner, that is, the light-transmitting holes 311 are aligned in both the row direction and the column direction. The light-transmitting holes 311 in the light-shielding layer 31 can also be arranged in a hexagonal pattern, that is, see Figure 5 shown. Of course, in the embodiment of the present disclosure, the light-transmitting holes 311 can also be arranged in other ways, and the hole shape of the light-transmitting holes 311 can be circular or square, which is not limited herein.

[0162] Specifically, in the above-described texture recognition module provided by the embodiments of the present disclosure, the light-shielding layer 31 can generally be made of a material with strong light-shielding ability such as black resin like BM. The process parameters of each light-shielding layer 31 are generally the same, and its thickness is relatively thin, generally 500 Å to 16,000 Å, and the OD value of each light-shielding layer 31 needs to be ensured to be not less than 3. Among them, the OD value refers to the light transmittance of the film layer. When OD value = 1, the light transmittance of the film layer is 10%; when OD value = 2, the light transmittance of the film layer is 1%; when OD value = 3, the light transmittance of the film layer is 0.1%; when OD value = 4, the light transmittance of the film layer is 0.01%. That is, the larger the OD value, the better the light-shielding effect of the film layer. Specifically, when making the light-shielding layer, the film layer is generally coated on the entire substrate 1, and then, the light-transmitting holes are made by photolithography or nanoimprinting.

[0163] Continue to refer to Figures 2a to 2d As shown, in some embodiments, the light-transmitting layer 32 can include a transparent resin layer 321 and a transparent inorganic insulating layer 322; between two adjacent light-shielding layers, the transparent resin layer 321 is adjacent to the light-shielding layer on the side close to the substrate 1, and the transparent inorganic insulating layer 322 is adjacent to the light-shielding layer on the side far from the substrate 1.

[0164] Specifically, the transparent resin layer 321 and the transparent inorganic insulating layer 322 in the light-transmitting layer 32 can be fabricated using the equipment for manufacturing the thin film encapsulation structure in the array substrate. That is, the transparent inorganic insulating layer 322 can be fabricated using a chemical vapor deposition (CVD) apparatus for manufacturing an inorganic thin film encapsulation layer, and the transparent resin layer 321 can be fabricated using an inkjet printing (IJP) apparatus for manufacturing an organic thin film encapsulation layer. After the light-shielding layer is fabricated, the transparent resin layer 321 can be formed first to ensure that the overall required thickness of the light-transmitting layer 32 is generally in the micron order of magnitude, and then the transparent inorganic insulating layer 322 with a relatively thin thickness in the nanometer order of magnitude is formed on the transparent resin layer 321. The process parameters and thicknesses of the transparent inorganic insulating layers 322 are generally the same. The transparent resin layer 321 can specifically be made of acrylic resin material. If a black resin material is directly coated on it, a film layer with a relatively uniform thickness cannot be formed, and problems such as local material aggregation will occur. Therefore, adding the transparent inorganic insulating layer 322 on the transparent resin layer 321 can ensure the film formation uniformity of the light-shielding layer formed thereon.

[0165] Optionally, in the above-described texture recognition module provided by the embodiments of the present disclosure, the material of the transparent inorganic insulating layer 322 can be silicon nitride or silicon oxynitride formed by low-temperature chemical vapor deposition. Among them, the temperature used in the low-temperature chemical vapor deposition method is about 80 °C. Since the light-shielding layer 31 and the transparent resin layer 321 are fabricated at low temperature, forming the transparent inorganic insulating layer 322 by low-temperature chemical vapor deposition can avoid damage to the underlying light-shielding layer pattern and the transparent resin layer 321 caused by the high-temperature environment.

[0166] See Figure 6 As shown, in some embodiments, the light-shielding layer 31 may extend from the texture recognition region A to the adjacent edge of the peripheral region B, that is, the region covered by the light-shielding layer 31 is larger than the texture recognition region A to ensure that stray light incident from the peripheral region B to the optical sensing structure 2 can be blocked. The orthographic projection of the transparent resin layer 321 on the substrate 1 should completely cover the orthographic projection of the adjacent light-shielding layer 31 on the substrate 1. During actual manufacturing, due to the fluidity of the resin material, the finally formed transparent resin layer 321 will overflow from the edge of the light-shielding layer 31. Therefore, in order to ensure the uniformity of the thickness of the subsequent formed light-shielding layer 31 at the edge position, the orthographic projection of the transparent inorganic insulating layer 322 formed on the transparent resin layer 321 on the substrate 1 should completely cover and be larger than the orthographic projection of the adjacent transparent resin layer 321 on the substrate 1.

[0167] See Figure 6 and Figure 7 As shown, in some embodiments, the optical path structure 3 may further include a retaining wall structure 33. The retaining wall structure 33 is disposed around the transparent resin layer 321 and is independently disposed on the same layer as the light-shielding layer 31 adjacent to the transparent resin layer 321.

[0168] Specifically, while manufacturing the light-shielding layer 31, a retaining wall structure 33 is manufactured at a certain distance around the periphery of the light-shielding layer 31. The gap between the light-shielding layer 31 and the retaining wall structure 33 serves as the edge overflow area E of the subsequent transparent resin layer 321. When the material of the transparent resin layer 321 with a certain fluidity is coated on the light-shielding layer 31 later, the retaining wall structure 33 can prevent the edge of the transparent resin layer 321 from overflowing outside the retaining wall structure 33. And, since there may be an edge overflow problem when manufacturing each transparent resin layer 321, therefore, except for the last manufactured light-shielding layer 31, retaining wall structures 33 can be manufactured while manufacturing other light-shielding layers 31.

[0169] Continue to refer to Figures 3a to 3c and Figure 6 As shown, in some embodiments, the texture recognition module may further include: a planarization layer 4 located between the optical path structure 3 and the optical sensing structure 2. The planarization layer 4 is disposed on the entire surface and has a hollow pattern only in the bonding region C.

[0170] Specifically, after the optical sensing structure 2 is manufactured, a planarization layer 4 is first manufactured. On the one hand, it is beneficial for the subsequent formation of the optical path structure 3 on it. On the other hand, the planarization layer 4 can protect the underlying film layer. The planarization layer 4 is provided with a hollow pattern in the bonding region C to expose the bonding electrode 7 for subsequent bonding of the driving chip. The hollow pattern can be specifically set in one-to-one correspondence with each bonding electrode 7, or a hollow pattern can be set in the entire bonding region C, which is not limited herein.

[0171] Optionally, in the above-mentioned texture recognition module provided by the embodiments of the present disclosure, the planarization layer 4 is generally made of an inorganic insulating material. For example, silicon oxide (SiO2) or silicon nitride (SiN) materials can be used. Among them, the silicon nitride film has good film-forming compactness, which is beneficial to the uniformity of the film formation of the first light-shielding layer 31 in the optical path structure 3 on the planarization layer 4. At the same time, it can better protect the underlying structure from the etching solution when etching the first light-shielding layer. Since each film layer of the optical sensing structure 2 is formed by a high-temperature process, the planarization layer 4 can also be formed by a high-temperature process without damaging the underlying film layers. Specifically, the planarization layer 4 can be fabricated using a plasma-enhanced chemical vapor deposition (PECVD) device, and its fabrication temperature can be about 230°C.

[0172] Continue to refer to Figures 3a to 3c and Figure 6 As shown, in some embodiments, the texture recognition module may further include: a ground shielding layer 5 located between the planarization layer 4 and the optical sensing structure 3; the ground shielding layer 5 is adjacent to the planarization layer 4, and the pattern of the ground shielding layer 5 is covered by the pattern of the planarization layer 4. The orthographic projection of the ground shielding layer 5 on the substrate 1 covers the orthographic projection of the optical sensing structure 2 on the substrate 1. Specifically, the ground shielding layer 5 covers the entire fingerprint recognition area, or the ground shielding layer 5 only covers the photosensitive area within the fingerprint recognition area.

[0173] Refer to Figure 6 As shown, the ground shielding layer 5 is generally disposed entirely on the texture recognition area A, which plays a role in shielding electromagnetic interference from the external optical sensing structure 2. And in order to ensure the transmittance, it is generally made of ITO. The planarization layer 4 completely covers the ground shielding layer 5, which can protect the ground shielding layer 5 and prevent the ground shielding layer 5 from being exposed to a hydrogen-rich environment during the subsequent film formation of the optical path structure 3 in the chemical vapor deposition device, resulting in the indium ions in the ITO being displaced by hydrogen, which causes the atomization problem of the ground shielding layer 5 and affects the transmittance.

[0174] Refer to 8a to Figure 8c and Figure 9 As shown, the texture recognition area is divided into a photosensitive area A1, a spacer area A2, and a light-shielding area A3. The spacer area A2 is located between the photosensitive area A1 and the light-shielding area A3; the optical sensing structure 2 is disposed in the photosensitive area A1 and the light-shielding area A3 and no pattern is provided in the spacer area A2.

[0175] Refer to Figure 3eAs shown, in some embodiments, to perform noise reduction processing on the electrical signals output by the optical sensors 21 in the photosensitive region A1, a noise reduction metal layer 6 is provided in the light shielding region A3. Generally, the noise reduction metal layer 6 is disposed between the ground shielding layer 5 and the optical sensing structure 2, and a third insulating layer 8 is provided between the ground shielding layer 5 and the noise reduction metal layer 6. The noise reduction metal layer 6 covers the optical sensors located in the light shielding region A3, so that the light shielding region A3 is always in a dark state. Since the optical sensors 21 in the light shielding region A3 are not illuminated, the signals they output can be used as noise signals (electrical signal noise) for denoising the signals output by the photosensitive region A1. However, to fabricate the pattern of the above-mentioned noise reduction metal layer, a dedicated fabrication process and a mask for the lithography process need to be configured, resulting in an increase in the fabrication cycle and cost.

[0176] To solve the above technical problems, embodiments of the present disclosure provide another solution. In some embodiments, the orthographic projection of at least one light shielding layer on the substrate completely covers the light shielding region. For convenience of description, the part of the light shielding layer whose orthographic projection on the substrate completely covers the light shielding region is referred to as the noise reduction light shielding part M. The optical sensing structure 2 is disposed in the photosensitive region A1 and the light shielding region A3, and no pattern is provided in the spacer region A2. Figure 9 The multiple optical sensors 21 arranged in an array provided in the photosensitive region A1 and the light shielding region A3 are shown in a box in. The noise reduction light shielding part M can cover the spacer region A2 and the light shielding region A3, and the ground shielding layer 5 covers the photosensitive region A1, the spacer region A2, and the light shielding region A3. That is, it can be considered that the optical sensing structures 2 in the light shielding region A3 and the photosensitive region A1 are the same, and the difference between the two is that the noise reduction light shielding part M of the light shielding layer in the light shielding region A3 is not provided with a light passing hole. Figure 3c The optical sensor structure in the light shielding region A3 is shown. Figure 3a The optical sensing structure of the photosensitive region A1 is shown.

[0177] Due to the presence of the noise reduction light shielding part M, the optical sensors 21 in the light shielding region A3 are not illuminated, so the signals they output can be used as noise signals (electrical signal noise) to denoise the signals output by the photosensitive region A1. In the embodiments of the present disclosure, the light shielding layer in the optical path structure 3 is used to block the light shielding region A3 to replace the noise reduction metal layer in the prior art, which can effectively shorten the product fabrication cycle and reduce the production cost.

[0178] It should be noted that Figure 3c The situation where the orthographic projection of each light shielding layer on the substrate completely covers the light shielding region A3 is exemplified in, and this situation only serves as an example and will not limit the technical solution of the present disclosure. In the embodiments of the present disclosure, a separate noise reduction metal layer ( Figure 3e shown in) or the light shielding layer in the optical path structure 3 ( Figure 3cShading the light-shielding area A3 as shown in [figure] also falls within the protection scope of the present disclosure.

[0179] Generally, the reading chip reads data in cycles of 32 columns of optical sensors 21. Therefore, in order to facilitate denoising processing, optical sensors 21 that are an integer multiple of 32 columns can be provided in the light-shielding area A3. No optical sensors 21 are provided in the spacer area A2 provided between the photosensitive area A1 and the light-shielding area A3. The spacer area A2 can generally be provided with a spacing of at least two columns of optical sensors 21 to avoid interference between the signals of the photosensitive area A1 and the light-shielding area A3.

[0180] In the embodiment of the present disclosure, the light-shielding area A3 can be provided on at least one side of the four sides of the photosensitive area A1, which are the side close to the gate driver chip bonding area C1, the side far from the gate driver chip bonding area C1, the side close to the data driver chip bonding area C2, and the side far from the data driver chip bonding area C2. The orthographic projection of the noise-reducing light-shielding part M provided between the ground shielding layer 5 and the optical sensing structure 2 on the substrate 1 can be located on the side adjacent to the pattern recognition area A and the bonding area C to reduce the noise interference between the optical sensing structure 2 and the driving chip bonded to the bonding area C.

[0181] See Figures 8a to 8c As shown, in some embodiments, the light-shielding area A3 can be located on one side, opposite sides, or intersecting sides of the photosensitive area A1.

[0182] Taking the case where the bonding area C includes the gate driver chip bonding area C1 located on the right side of the pattern recognition area A and the data driver chip bonding area C2 located on the lower side of the pattern recognition area A as an example. See Figure 8a As shown, the light-shielding area A3 is located on one side of the photosensitive area A1. Specifically, the light-shielding area A3 is located on the side of the photosensitive area A1 close to the gate driver chip bonding area C1 (i.e., the right area part of the pattern recognition area A), and the pattern of the noise-reducing light-shielding part M is set in the right area part of the pattern recognition area A. See Figure 8b As shown, the light-shielding areas A3 are located on opposite sides of the photosensitive area A1. Specifically, the two light-shielding areas A3 are respectively located on the side of the photosensitive area A1 close to the gate driver chip bonding area C1 and the side far from the gate driver chip bonding area C1 (i.e., the left area part and the right area part of the pattern recognition area A), and the patterns of the noise-reducing light-shielding part M are set in the left area part and the right area part of the pattern recognition area A. See Figure 8cAs shown, the light-shielding regions A3 are located on two intersecting sides of the photosensitive region A1. Specifically, the two light-shielding regions A3 are respectively located on one side of the photosensitive region A1 close to the gate driver chip bonding region C1 and on one side close to the data driver chip bonding region C2 (i.e., the right region part and the lower region part of the texture recognition region A). The pattern of the noise-reducing light-shielding part M is set in the right region part and the lower region part of the texture recognition region A.

[0183] It should be noted that Figures 8a to 8c The positional relationship between the light-shielding region A3 and the photosensitive region A1 shown only serves as an example and will not limit the technical solution of the present disclosure.

[0184] Refer to Figures 10a to 10e As shown, in some embodiments, the texture recognition module further includes: a bonding electrode located in the bonding region, and the bonding electrode is in the same film layer as the bias voltage line. Among them, the film layer where the bias voltage line is located is generally prepared from a metal material, such as molybdenum (MO), titanium / aluminum / titanium (Ti / Al / Ti), etc.

[0185] The gate driver chip bonding region C1 located on the right side of the texture recognition region A is generally used for bonding the gate driver chip, and the data driver chip bonding region C2 located below the texture recognition region A is generally used for bonding the data driver chip or called the data reading chip. For the convenience of description, refer to Figure 8d As shown, the bonding electrode located in the gate driver chip bonding region C1 is called the first bonding electrode 71, and the bonding electrodes located in the data driver chip bonding region C2 are called the second bonding electrode 72 and the third bonding electrode 73. The first bonding electrode 71 is used to provide a signal to the gate 221, the second bonding electrode 72 is used to connect to the source-drain 224, and the third bonding electrode 73 is used to provide a signal to the bias voltage line 234.

[0186] In order to facilitate the connection of different types of bonding electrodes to the corresponding components, corresponding connection electrodes can be provided below each bonding electrode to the film layer where the component to be connected is located.

[0187] Refer to Figures 10a to 10cAs shown, in some embodiments, between the first bonding electrode 71 and the substrate 1, there are a first connection electrode 91 located in the film layer where the gate 221 is located, a second connection electrode 92 located in the film layer where the source-drain electrode 224 is located, and a third connection electrode 93 located in the film layer where the first electrode 211 is located; the first connection electrode 71 is electrically connected to the second connection electrode 92 through a first via 222a penetrating through the gate insulating layer 222, the second connection electrode 92 is electrically connected to the third connection electrode 93 through a second via 225a penetrating through the first insulating layer 225, and the third connection electrode 93 is electrically connected to the first bonding electrode 71 through a third via 233a penetrating through the passivation layer 233; the first connection electrode 71 is electrically connected to the gate 221 through a gate line and a gate line fan-out routing.

[0188] See Figure 10c As shown, in some embodiments, the number of the first via 222a, the second via 225a, and the third via 233a corresponding to one first bonding electrode 71 is at least two, and the orthographic projections of the first via 222a, the second via 225a, and the third via 233a on the substrate 1 do not overlap with each other and are alternately arranged along the extending direction of the first bonding electrode 71. In addition, a bonding via 8a for exposing the first bonding electrode 71 is further provided on the barrier layer 235; generally, one first bonding electrode 71 corresponds to one bonding via 8a, and the orthographic projection of the bonding via 8a on the substrate 1 covers the first via 222a, the second via 225a, and the third via 233a at the same time. Specifically, providing multiple first via 222a, second via 225a, and third via 233a can improve the connection yield and reduce the resistance, and the staggered arrangement of the first via 222a, the second via 225a, and the third via 233a can improve the connection yield. And, see Figure 10b As shown, the embodiments in which the vias overlap or partially overlap with each other are also within the protection scope of the present disclosure.

[0189] See Figure 10d As shown, in some embodiments, between the second bonding electrode 72 and the substrate 1, there are a fourth connection electrode 95 located in the film layer where the source-drain electrode 224 is located and a fifth connection electrode 96 located in the film layer where the first electrode 213 is located. The fourth connection electrode 95 is electrically connected to the fifth connection electrode 96 through a fourth via penetrating through the first insulating layer 225, and the fifth connection electrode 96 is electrically connected to the second bonding electrode 72 through a fifth via penetrating through the second passivation layer 233; the fourth connection electrode 95 is electrically connected to the source-drain electrode 224 through a data line and a data line fan-out routing. Similar to the connection relationship between the first bonding electrode 71 and the corresponding connection electrodes, the corresponding vias of the second bonding electrode 72 can also be staggered and provided in multiple numbers, which will not be elaborated here.

[0190] See Figure 10e As shown, the third bonding electrode 73 is electrically connected to the bias voltage line through a bias voltage fan-out routing.

[0191] To further reduce the influence of the pigment light excited after the ambient light passes through the fingerprint on the accuracy of pattern recognition, in the embodiments of the present disclosure, a light filtering layer is provided on the side of the semiconductor layer 212 away from the substrate. The light filtering layer is configured such that the central wavelength of the light passing through the light filtering layer is less than 600 nm, that is, the light filtering layer has a better filtering effect on light with a wavelength greater than 600 nm. In other words, light with a wavelength less than 600 nm can pass through the light filtering layer.

[0192] See Figure 10f as shown in Figure 10f In the figure, the horizontal axis represents the wavelength of the pigment light excited by the pattern, with the unit of nanometer (nm), and the vertical axis represents the excitation rate, with the unit of % (percent); the excitation rate corresponding to each wavelength indicates the probability that the pattern excites the pigment light of this wavelength. As can be seen from Figure 10f the figure, the wavelengths of the pigment light excited by the pattern are generally above 600 nm. Therefore, by setting the light filtering layer in the embodiments of the present disclosure to filter out light with a wavelength greater than 600 nm, it can be ensured that the light filtering layer can filter out most of the pigment light, so as to reduce the interference of the pigment light on pattern recognition.

[0193] In some embodiments, the light filtering layer is configured to transmit light with a wavelength between 480 nm and 580 nm. That is, the central wavelength of the light passing through the light filtering film can be between 480 nm and 580 nm. As an example, see Figure 10g as shown in Figure 10g the figure, the horizontal axis represents the wavelength of the light, with the unit of nm, Figure 10g and the vertical axis in the figure represents the transmittance of the light filtering layer to the light, with the unit of %. As can be seen from Figure 10g the figure, the wavelengths of the light passing through the light filtering layer are mainly between 480 nm and 580 nm.

[0194] In the embodiments of the present disclosure, a light filtering layer is provided on the side of the semiconductor layer 212 away from the substrate substrate to filter out most of the pigment light excited by the pattern, thereby reducing the pigment light incident on the semiconductor layer 212. In this way, the interference degree of the pigment light on kiss recognition is reduced, and the accuracy of pattern recognition is improved.

[0195] In some embodiments, the material of the light filtering layer includes a resin material with a light filtering function, and this resin material can effectively filter out light with a wavelength greater than 600 nanometers. Exemplarily, the material of this resin can be the same as the material of the green color resist.

[0196] See Figures 2a to 3cIn some embodiments, the material of the second insulating layer 232 includes: a resin material having a light filtering function, and the light filtering layer and the second insulating layer 232 are multiplexed and combined into the same film layer (i.e., the second insulating layer 232 is reused as the light filtering layer); and / or, the material of the barrier layer 235 includes: a resin material having a light filtering function, and the light filtering layer and the barrier layer 235 are multiplexed and combined into the same film layer (i.e., the barrier layer 235 is reused as the light filtering layer); and / or, the light transmissive layer includes a transparent resin layer 321 and a transparent inorganic insulating layer 322. Between two adjacent light shielding layers, the transparent resin layer is adjacent to the light shielding layer closer to the substrate, and the transparent inorganic insulating layer 322 is adjacent to the light shielding layer farther from the substrate. The material of the transparent resin layer 321 includes: a resin material having a light filtering function, and the light filtering layer and the transparent resin layer 321 are multiplexed and combined into the same film layer (i.e., the transparent resin layer 321 is reused as the light filtering layer).

[0197] Of course, in the embodiments of the present disclosure, the light filtering layer may also exist as an independent film layer different from the second insulating layer 232 / barrier layer 235 / transparent resin layer 321. In this case, no corresponding drawings are given.

[0198] See Figure 11 As shown, based on the same inventive concept, the embodiments of the present disclosure further provide a display device. The display device includes the texture recognition module 100 provided in the above embodiments, and a display panel 200 located above the texture recognition module 100. The display panel 200 and the texture recognition module 100 are fixed by an optical adhesive 300 (OCA).

[0199] Specifically, in the above display device provided by the embodiments of the present disclosure, after the optical sensing structure 2 is fabricated on the substrate 1 in the texture recognition module 100, at least two light shielding layers and light transmissive layers with relatively simple structures are directly fabricated to achieve a good collimation effect. Moreover, the device structure is relatively thin and light, which can reduce the processing difficulty of the device. It can avoid problems such as blistering that affect the yield caused by the method of bonding an optical path structure with an optical adhesive (OCA) above the texture recognition module 100. And, since the film layer is directly fabricated on the optical sensing structure 2 to form the optical path structure 3, therefore, a general device for fabricating the film layer on the array substrate can be used to fabricate the optical path structure 3 without adding new fabrication equipment.

[0200] In some embodiments, the display panel 200 may be an Organic Light Emitting Diode (OLED) display panel, a Quantum Dot Light Emitting Diodes (QLED) display panel, etc. Embodiments of the present disclosure do not make specific limitations thereto. For example, the OLED display panel may be a flexible OLED display panel. For example, the OLED display panel and the QLED display panel have self-luminous characteristics, and the light emission of their display pixel units can also be controlled or modulated as needed, which can facilitate texture acquisition and help improve the integration of the device.

[0201] The OLED display panel generally includes a flexible OLED display backplane 210, a polarizer 220, and a protective cover plate 230 that are sequentially stacked in a direction away from the texture recognition module. The material of the protective cover plate 230 may be polyimide PI. The substrate of the flexible OLED display backplane 210 is a flexible substrate, and the specific material may be PI or other flexible materials.

[0202] In some embodiments, the thickness of the OLED display panel ranges from 0.2 mm to 1.5 mm.

[0203] Specifically, the OLED display panel can achieve flexible display. For example, it can be made into a folding screen according to actual needs. Moreover, by using PI material for the protective cover plate 230 in the OLED display panel, the panel can be made thinner and lighter to meet the required panel thickness of customers. For example, it can reach the thickness of the required ultra-thin folding screen, which ranges from 0.4 mm to 0.65 mm, to meet the design requirements of the folding screen.

[0204] See Figure 12 As shown, in some embodiments, the optical path structure 3 in the texture recognition module 100 in the above-mentioned display device provided by the embodiments of the present disclosure may include two light-shielding layers 31a, 31b and one light-transmitting layer 32. The distance between the two light-shielding layers 31a, 31b is used to determine the height of the optical path structure 3, and the light-transmitting holes 311a, 311b in the light-shielding layer 31 are used to determine the collimated light-receiving angle. Figure 12 The optical path structure 3 shown specifically includes a first light-shielding layer 31a, a transparent resin layer 321, a transparent inorganic insulating layer 322, and a second light-shielding layer 31b that are sequentially stacked on the optical sensing structure 2.

[0205] The first light-shielding layer 31a includes first light-transmitting holes 311a arranged in an array, and the second light-shielding layer 31b includes second light-transmitting holes 311b arranged in an array. The period of the first light-transmitting holes 311a is the same as that of the second light-transmitting holes 311b, the first light-transmitting holes 311a and the second light-transmitting holes 311b correspond to each other one by one, and the orthographic projections of the first light-transmitting holes 3 on the substrate 1 and the corresponding second light-transmitting holes do not overlap.

[0206] Since the orthographic projections of the first light-transmitting holes 311a and the corresponding second light-transmitting holes 311b on the substrate 1 do not overlap, the first light-transmitting holes 311a and the corresponding second light-transmitting holes 311b define a light-transmitting channel Q that is inclined. In an environment with strong ambient light, since the incident angle is 0° and small-angle ambient light close to 0° cannot pass through the optical path structure 3, the intensity of the ambient light reaching the optical sensing structure 2 will decrease significantly, which is beneficial to improving the accuracy of fingerprint recognition.

[0207] Continue to refer to Figure 12 As shown, generally speaking, the light emitted by the OLED display panel generally has a maximum light angle, denoted as θmax, and θmax also represents the maximum angle of the finger reflected light. When the optical path structure 3 adopts a two-layer light-shielding layer structure, to prevent light crosstalk, the distance H between the two light-shielding layers, the inclination angle θx of the central axis of the light-transmitting channel Q, the maximum angle θmax of the finger reflected light, and the period P of the light-transmitting holes on the light-shielding layer (the apertures and periods of the light-transmitting holes on the two light-shielding layers are the same) satisfy the following relationship:

[0208] P≥(tanθx + tanθmax)*H

[0209] That is, the minimum value of P at this time is (tanθx + tanθmax)*H, which can effectively prevent the problem of light crosstalk.

[0210] Refer to Figure 13 and Figure 14As shown, in some embodiments, the optical path structure 3 in the texture recognition module 100 in the above display device provided by the embodiments of the present disclosure may further include three or more light-shielding layers. At this time, the number of light-transmitting layers 32 may also increase correspondingly. By providing at least one third light-shielding layer 31c between the first light-shielding layer 31a and the second light-shielding layer 31b, the third light-shielding layer 31c can block the light that passes through the second light-transmitting hole 311b and is directed towards other light-transmitting holes except the corresponding first light-transmitting hole 311a, thereby effectively avoiding the problem of light crosstalk and improving the accuracy of the recognized texture information. At the same time, the period P of the light-transmitting holes on the first light-shielding layer 31a and the second light-shielding layer 31b can also be reduced. Among them, the minimum value of the period P is related to factors such as the number and position of the third light-shielding layer 31c and the aperture of the third light-transmitting hole 311c. Theoretically, the minimum value of the period P can approach the aperture d of the light-transmitting hole.

[0211] The display device further includes signal lines (including gate lines, data lines, detection lines, etc.) for providing electrical signals (including scan signals, data signals, detection signals, etc.), and the light-emitting state of the light-emitting device can be controlled through a driving circuit to achieve the lighting of sub-pixels.

[0212] See Figures 15a to 15c As shown, in some embodiments, the display device may further include: a middle frame 400, the middle frame 400 includes a bottom plate 401 and a side wall 402 formed by bending the edge of the bottom plate 401 towards the front side. The bottom plate 401 and the side wall 402 form a receiving groove, and the texture recognition module and the display panel 200 are fixed in the receiving groove, and the display panel 200 is located on the side of the texture recognition module away from the bottom plate 401. Among them, the front surface of the bottom plate 401 specifically refers to the side surface of the bottom plate 401 where the side wall 402 is formed, and the back surface is the opposite surface of the bottom plate 401.

[0213] See Figure 15a As shown, as an implementation, the texture recognition module is fixed on the bottom plate 401. Exemplarily, the substrate 1 in the texture recognition module is fixed on the front surface of the bottom plate 401 through glue (such as double-sided tape, OC glue, etc.) to achieve the fixation of the texture recognition module 100 and the display panel 200 to the middle frame 400.

[0214] See Figure 15b As shown, as another implementation, a stepped support structure is formed on the side wall 402, and the display panel 200 is fixed on the stepped support structure 404. Exemplarily, the display panel 200 is fixed on the stepped support structure 404 through glue (such as double-sided tape, OC glue, etc.) to achieve the fixation of the texture recognition module 100 and the display panel 200 to the middle frame 400.

[0215] Of course, to increase the fixing firmness, while the texture recognition module is fixed to the bottom plate 401, the display panel 200 can also be fixed to the stepped support structure 400.

[0216] In some embodiments, through holes 403 are formed in the bottom plate 401. The display device further includes: a flexible circuit board 501 for texture recognition and a chip 502 for texture recognition; the flexible circuit board 501 for texture recognition passes through the through holes 403, one end of which is electrically connected to the bonding electrodes located in the bonding area within the texture recognition module 100 (generally through a bonding process), and the other end is electrically connected to the chip 502 for texture recognition located on the back of the bottom plate 401 (generally through a die bonding film process). Similarly, a display chip (not shown) and a flexible circuit board 50.3 for display can also be electrically connected to the display panel 200 located in the receiving groove in the same manner.

[0217] In some embodiments, the display panel further has functional layers such as a packaging layer and a touch layer. These functional layers can refer to related technologies and will not be elaborated herein.

[0218] The display device provided in this embodiment can be any product or component with a texture recognition function such as a mobile phone, a tablet computer, a display, a laptop computer, etc. The embodiments of the present disclosure do not make specific limitations thereto.

[0219] Based on the same inventive concept, the embodiments of the present disclosure also provide a method for preparing a texture recognition module, which can be used to prepare the texture recognition module provided in the previous embodiments. Refer to Figure 16 As shown, the texture recognition module is divided into a texture recognition area and a peripheral area located around the texture recognition area. The peripheral area includes a bonding area. Among them, the preparation method includes:

[0220] Step S1: Provide a substrate.

[0221] Step S2: Form an optical sensing structure on the substrate and within the texture recognition area.

[0222] Step S3: Form an optical path structure on the optical sensing structure. The optical path structure is at least within the texture recognition area and does not cover the bonding area. The optical path structure is configured to have a plurality of light transmission channels and the light rays incident on the optical path structure can only pass through the light transmission channels. The optical path structure includes: at least two light-shielding layers arranged in a stack and a light-transmitting layer located between every two adjacent light-shielding layers. The light-shielding layer closest to the optical sensing structure is provided with first light-transmitting holes arranged in an array, and the light-shielding layer farthest from the optical sensing structure is provided with second light-transmitting holes corresponding to the first light-transmitting holes one by one. The first light-transmitting holes and the corresponding second light-transmitting holes define the light transmission channels, and the orthographic projections of the first light-transmitting holes and the corresponding second light-transmitting holes on the substrate do not overlap.

[0223] In the above preparation method provided by the embodiments of the present disclosure, after the optical sensing structure is fabricated on the substrate, it is only necessary to directly fabricate at least two light-shielding layers and light-transmitting layers with relatively simple structures to achieve a good collimation effect, and the device structure is relatively thin and light, which can reduce the processing difficulty of the device. It can avoid problems such as blistering that affect the yield rate caused by the method of bonding the optical path structure with optical adhesive (OCA) on the texture recognition module. Moreover, since the film layer is directly fabricated on the optical sensing structure to form the optical path structure, a general device for fabricating the film layer on the array substrate can be used to fabricate the optical path structure without adding new fabrication equipment.

[0224] In some embodiments, a light-shielding layer in the optical path structure can generally be made of a material with strong light-shielding ability such as black resin like BM. The process parameters of each light-shielding layer are generally the same. Specifically, when fabricating the light-shielding layer, the film layer is generally coated on the substrate as a whole layer, and then, the light-transmitting holes are fabricated by photolithography or nanoimprinting.

[0225] In some embodiments, the process of forming the light-transmitting layer in the process of forming the optical path structure includes: forming a transparent resin layer on the light-shielding layer by an inkjet printing process; forming a transparent inorganic insulating layer covering the transparent resin layer on the transparent resin layer by a low-temperature chemical vapor deposition process.

[0226] Specifically, the transparent resin layer and the transparent inorganic insulating layer in the light-transmitting layer can be fabricated by using the equipment for fabricating the thin-film encapsulation structure in the array substrate, that is, the transparent inorganic insulating layer can be fabricated by using a chemical vapor deposition (CVD) device for fabricating the inorganic thin-film encapsulation layer, and the transparent resin layer can be fabricated by using an inkjet printing (IJP) device for fabricating the organic thin-film encapsulation layer. After the light-shielding layer is fabricated, the transparent resin layer can be formed first to ensure that the overall required thickness of the light-transmitting layer is generally in the micron order, and then a transparent inorganic insulating layer with a relatively thin thickness in the nanometer order is formed on the transparent resin layer. The process parameters and thickness of each transparent inorganic insulating layer are generally the same. The transparent resin layer can specifically be made of acrylic resin material. If a black resin material is directly coated on it, a film layer with a relatively uniform thickness cannot be formed, and problems such as local material aggregation will occur. Therefore, adding a transparent inorganic insulating layer on the transparent resin layer can ensure the film-forming uniformity of the light-shielding layer formed on it.

[0227] Specifically, in the above preparation method provided by the embodiments of the present disclosure, a low-temperature process is used to form the optical path structure. Specifically, the temperature used in the low-temperature process is about 80 °C. Since the light-shielding layer and the transparent resin layer are fabricated at low temperature, forming the transparent inorganic insulating layer by a low-temperature chemical vapor deposition method can avoid damage to the light-shielding layer pattern and the transparent resin layer below caused by the high-temperature environment.

[0228] In some embodiments, before step S2, the method also includes the step of forming a ground shielding layer on the optical sensing structure, and the step of forming a planarization layer on the ground shielding layer by plasma enhanced chemical vapor deposition; wherein the planarization layer is disposed on the entire surface of the substrate and has a hollow pattern only in the binding area.

[0229] The ground shielding layer is generally set in the texture recognition area on the whole surface to shield the electromagnetic interference of the external optical sensing structure, and is generally made of ITO to ensure the transmittance. The flattening layer completely covers the ground shielding layer, which can protect the ground shielding layer and prevent the ground shielding layer from being exposed to the hydrogen-rich environment when the film layer of the optical path structure is made in the subsequent chemical vapor deposition equipment. The hydrogen replaces the indium ions in the ITO, causing the ground shielding layer to be atomized and affect the transmittance.

[0230] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present disclosure, but the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and substance of the present disclosure, and these modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A texture recognition module is divided into a texture recognition area and a peripheral area located around the texture recognition area. The peripheral area includes a bonding area, where, include: substrate; An optical sensing structure is located on the substrate and in the texture recognition area; The optical sensing structure comprises a gate, a gate insulating layer, an active layer, a source and drain electrode, a first insulating layer, a first electrode, a semiconductor layer, a second electrode, a protective layer, a second insulating layer, a passivation layer, a bias voltage line, and a barrier layer which are sequentially stacked in a direction away from the substrate; an optical path structure, located on a side of the optical sensing structure away from the substrate, at least in the texture recognition area and not covering the binding area, the optical path structure being configured to have a plurality of light-transmitting channels and light directed toward the optical path structure being able to pass through the light-transmitting channels; The optical path structure comprises: at least two light-shielding layers stacked and a light-transmitting layer between each two adjacent light-shielding layers, the light-shielding layer closest to the optical sensing structure is provided with first light-transmitting holes arranged in an array, the light-shielding layer farthest from the optical sensing structure is provided with second light-transmitting holes corresponding to the first light-transmitting holes one by one, the first light-transmitting holes and the corresponding second light-transmitting holes define a light-transmitting channel, and the orthographic projection of the first light-transmitting holes on the substrate does not overlap with the orthographic projection of the corresponding second light-transmitting holes on the substrate; A binding electrode, located in the binding area, wherein the binding electrode and the bias voltage line are located in the same film layer; The binding area includes a gate driver chip binding area, and the binding electrode located in the gate driver chip binding area includes a first binding electrode; between the first binding electrode and the substrate, there is a first connecting electrode located in the film layer where the gate is located, a second connecting electrode located in the film layer where the source and drain are located, and a third connecting electrode located in the film layer where the first electrode is located; The first connecting electrode is electrically connected to the second connecting electrode through a first via hole penetrating the gate insulating layer, the second connecting electrode is electrically connected to the third connecting electrode through a second via hole penetrating the first insulating layer, and the third connecting electrode is electrically connected to the first binding electrode through a third via hole penetrating the passivation layer; the first connecting electrode is electrically connected to the gate through a gate line and a gate line fan-out wiring.

2. The texture recognition module according to claim 1, wherein, A line connecting the center of the first light-transmitting hole and the center of the second light-transmitting hole corresponding to the first light-transmitting hole constitutes a central axis of the defined light-transmitting channel, and the central axis forms an inclination angle θx with the normal of the plane where the substrate is located, and the value range of θx is: [40°, 72°].

3. The texture recognition module according to claim 1 or 2, wherein, The collimated light collection angle θ of the optical path structure satisfies the following relationship: θ=arctan(X+d) / H-arctan(Xd) / H, wherein X is the distance between the center of the first light-transmitting hole and the orthographic projection of the center of the second light-transmitting hole corresponding to the first light-transmitting hole on the substrate, d is the aperture of the first light-transmitting hole and the second light-transmitting hole, and H is the distance between the first light-transmitting hole and the second light-transmitting hole in a direction perpendicular to the substrate.

4. The texture recognition module according to claim 3, wherein, The value range of θ is: (0°, 60°].

5. The texture recognition module according to claim 1, wherein, The aperture of the first light-transmitting hole is equal to the aperture of the second light-transmitting hole.

6. The texture recognition module according to claim 1, wherein, The number of light-shielding layers in the optical path structure is 2.

7. The texture recognition module according to claim 1, wherein, The number of light-shielding layers in the optical path structure is greater than or equal to 3 layers. The at least two light-shielding layers include: a first light-shielding layer closest to the optical sensing structure, a second light-shielding layer farthest from the optical sensing structure, and at least one third light-shielding layer located between the first light-shielding layer and the second light-shielding layer; The third light-shielding layer is provided with third light-transmitting holes corresponding one-to-one to the first light-transmitting holes, and the centers of the third light-transmitting holes are located in the light-transmitting channels defined by the corresponding first light-transmitting holes and the second light-transmitting holes.

8. The texture recognition module according to claim 7, wherein, The periods of the first light-transmitting holes on the first light-shielding layer, the periods of the second light-transmitting holes on the second light-shielding layer, and the periods of the third light-transmitting holes on the third light-shielding layer are the same; The centers of the first light-transmitting holes, the centers of the second light-transmitting holes corresponding to the first light-transmitting holes, and the centers of the third light-transmitting holes corresponding to the first light-transmitting holes are located on the same straight line.

9. The texture recognition module according to claim 8, wherein, The apertures of the first light-transmitting holes, the apertures of the second light-transmitting holes, and the apertures of the third light-transmitting holes are the same.

10. The texture recognition module according to claim 9, wherein, The number of layers of the third light-shielding layer in the optical path structure is 1 layer.

11. The texture recognition module according to claim 10, wherein, The light-transmitting layer between the third light-shielding layer and the first light-shielding layer is the first light-transmitting layer, and the light-transmitting layer between the third light-shielding layer and the second light-shielding layer is the second light-transmitting layer. The thickness of the first light-transmitting layer is greater than the thickness of the second light-transmitting layer.

12. The texture recognition module according to claim 10, wherein, The light-transmitting layer between the third light-shielding layer and the first light-shielding layer is the first light-transmitting layer, and the light-transmitting layer between the third light-shielding layer and the second light-shielding layer is the second light-transmitting layer; The aperture range of the first light-transmitting holes is: 2um to 10um, the period of the first light-transmitting holes is: 10um to 100um, the thickness range of the first light-transmitting layer is: 10um to 20um, and the thickness range of the second light-transmitting layer is 5um to 15um.

13. The texture recognition module according to claim 8, wherein, The number of layers of the third light-shielding layer in the optical path structure is 2 layers or 3 layers.

14. The texture recognition module according to claim 1, wherein, The pattern recognition area is divided into a photosensitive area, a spacer area, and a light-shielding area. The spacer area is located between the photosensitive area and the light-shielding area; The optical sensing structure is arranged in the photosensitive area and the light-shielding area and no pattern is arranged in the spacer area; The orthographic projection of at least one light-shielding layer on the substrate completely covers the light-shielding area.

15. The texture recognition module according to claim 14, wherein The light-shielding area is located on one side or opposite sides or intersecting sides of the photosensitive area.

16. The texture recognition module according to claim 1, wherein, The light-transmitting layer includes a transparent resin layer and a transparent inorganic insulating layer; Between adjacent two light-shielding layers, the transparent resin layer is adjacent to the light-shielding layer closer to the substrate side, and the transparent inorganic insulating layer is adjacent to the light-shielding layer farther from the substrate side.

17. The texture recognition module according to claim 16, wherein The light-shielding layer extends from the pattern recognition area to the adjacent edge of the peripheral area; The orthographic projection of the transparent resin layer on the substrate completely covers the orthographic projection of the adjacent light-shielding layer on the substrate; The orthographic projection of the transparent inorganic insulating layer on the substrate completely covers and is larger than the orthographic projection of the adjacent transparent resin layer on the substrate.

18. The texture recognition module according to claim 17, wherein, The optical path structure further includes a retaining wall structure. The retaining wall structure is arranged around the transparent resin layer, and the light-shielding layer adjacent to the transparent resin layer is independently arranged in the same film layer.

19. The texture recognition module according to claim 1, wherein, The optical sensing structure includes a plurality of optical sensors arranged in an array. One optical sensor corresponds to a plurality of the first light-transmitting holes, and one first light-transmitting hole corresponds to one optical sensor.

20. The texture recognition module according to claim 19, wherein, The orthographic projection of the optical sensor on the substrate is a square with a side length of D, and the period of the first light-transmitting holes is P. D and P satisfy the following relationship: D = N*P, where N is a positive even number.

21. The texture recognition module according to claim 20, wherein, The value range of D is 10um to 200um.

22. The texture recognition module according to claim 1, wherein, The orthographic projection of the source-drain electrodes on the substrate completely covers and is larger than the orthographic projection of the first electrodes on the substrate.

23. The texture recognition module according to claim 1, wherein, The source-drain electrodes are in direct contact with the semiconductor layer, and the source-drain electrodes and the first electrodes are located in the same film layer.

24. The texture recognition module according to claim 1, wherein, It further includes: A planarization layer located between the optical path structure and the optical sensing structure. The planarization layer is disposed over the entire surface and has a hollow pattern only in the bonding region.

25. The texture recognition module according to claim 24, wherein, It further includes: A ground shielding layer located between the planarization layer and the optical sensing structure; The ground shielding layer is adjacent to the planarization layer, and the pattern of the ground shielding layer is covered by the pattern of the planarization layer. The orthographic projection of the ground shielding layer on the substrate covers the optical sensing structure.

26. The texture recognition module according to claim 1, wherein, The number of the first vias, the second vias, and the third vias corresponding to one first bonding electrode is at least two. The orthographic projections of the first vias, the second vias, and the third vias on the substrate do not overlap with each other and are alternately arranged along the extending direction of the first bonding electrode.

27. The texture recognition module according to claim 1, wherein, The bonding region further includes a data driver chip bonding region. The bonding electrodes located in the data driver chip bonding region include second bonding electrodes and third bonding electrodes; There is a fourth connection electrode located in the film layer where the source-drain electrodes are located between the second bonding electrode and the substrate, and a fifth connection electrode located in the film layer where the first electrodes are located. The fourth connection electrode is electrically connected to the fifth connection electrode through a fourth via penetrating the first insulating layer, and the fifth connection electrode is electrically connected to the second bonding electrode through a fifth via penetrating the passivation layer; the fourth connection electrode is electrically connected to the source-drain electrodes through a data line and a data line fan-out trace; The third bonding electrode is electrically connected to the bias voltage line through a bias voltage fan-out trace.

28. The texture recognition module according to claim 1, wherein A filter layer is provided on the side of the semiconductor layer away from the substrate. The filter layer is configured such that the central wavelength of the light passing through the filter layer is less than 600nm.

29. The texture recognition module according to claim 28, wherein, The filter layer is configured to transmit light with a wavelength in the range of 480nm to 580nm.

30. The texture recognition module according to claim 28, wherein, The material of the second insulating layer includes: a resin material having a light filtering function, and the filter layer and the second insulating layer are multiplexed and combined into the same film layer; And / or, the material of the barrier layer includes: a resin material having a light filtering function, and the filter layer and the barrier layer are multiplexed and combined into the same film layer; And / or, the light-transmitting layer includes a transparent resin layer and a transparent inorganic insulating layer. Between two adjacent light-shielding layers, the transparent resin layer is adjacent to the light-shielding layer closer to the substrate side, and the transparent inorganic insulating layer is adjacent to the light-shielding layer farther from the substrate side. The material of the transparent resin layer includes: a resin material having a light-filtering function, and the light-filtering layer and the transparent resin layer are multiplexed and combined into the same film layer.

31. A display device, wherein, It includes a texture recognition module according to any one of claims 1-30, and a display panel located above the texture recognition module, and the display panel and the texture recognition module are fixed by an optical adhesive.

32. The display device according to claim 31, wherein, The display panel is an OLED display panel, and the OLED display panel includes an OLED display backplane, a polarizer, and a protective cover plate that are sequentially stacked in a direction away from the texture recognition module. The material of the protective cover plate includes polyimide.

33. The display device according to claim 32, wherein, The thickness of the OLED display panel ranges from 0.2 mm to 1.5 mm.

34. The display device according to claim 33, wherein, The thickness of the OLED display panel ranges from 0.4 mm to 0.65 mm.

35. The display device according to claim 31, wherein, It further includes: A middle frame, the middle frame includes a bottom plate and side walls formed by bending the edge of the bottom plate toward the front side. The bottom plate and the side walls form a receiving groove, and the texture recognition module and the display panel are fixed in the receiving groove, and the display panel is located on the side of the texture recognition module away from the bottom plate.

36. The display device according to claim 35, wherein, The texture recognition module is fixed on the bottom plate; And / or, a stepped support structure is formed on the side wall, and the display panel is fixed on the stepped support structure.

37. The display device according to claim 35, wherein, A through hole is formed on the bottom plate, and the display device further includes: a flexible circuit board for texture recognition and a chip for texture recognition; The flexible circuit board for texture recognition passes through the through hole, one end of which is electrically connected to the bonding electrode in the bonding area in the texture recognition module, and the other end is electrically connected to the chip for texture recognition located on the back of the bottom plate.

38. A method for preparing a texture recognition module as described in any one of claims 1 to 30, wherein the texture recognition module is divided into a texture recognition area and a peripheral area located around the texture recognition area, and the peripheral area includes a bonding area, where, The preparation method includes: Providing a substrate; Forming an optical sensing structure on the substrate and within the texture recognition area; Forming an optical path structure on the optical sensing structure. The optical path structure is at least within the texture recognition area and does not cover the bonding area. The optical path structure is configured to have a plurality of light-transmitting channels, and the light incident on the optical path structure can only pass through the light-transmitting channels. The optical path structure includes: at least two light-shielding layers stacked on top of each other and a light-transmitting layer located between every two adjacent light-shielding layers. The light-shielding layer closest to the optical sensing structure is provided with first light-transmitting holes arranged in an array, and the light-shielding layer farthest from the optical sensing structure is provided with second light-transmitting holes corresponding to the first light-transmitting holes one by one. The first light-transmitting hole and its corresponding second light-transmitting hole define a light-transmitting channel, and the orthographic projections of the first light-transmitting hole and its corresponding second light-transmitting hole on the substrate do not overlap.

39. The preparation method according to claim 38, wherein, The steps of forming the light-shielding layer during the process of forming the optical path structure include: Forming a light-shielding material thin film; Processing the light-shielding material thin film by a photolithography process or a nanoimprint process to form light-transmitting holes on the light-shielding material thin film.

40. The preparation method according to claim 38, wherein The steps of forming a light-transmitting layer in the process of forming an optical path structure include: Forming a transparent resin layer on the light-shielding layer by an inkjet printing process; Forming a transparent inorganic insulating layer covering the transparent resin layer on the transparent resin layer by a low-temperature chemical vapor deposition process.

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