A light-emitting device, a display panel, and a display device

Abstract

The present invention provides a light-emitting device, a display panel, and a display device. The reflective structure covers the sidewalls of the semiconductor light-emitting element, the surface of the second semiconductor layer facing away from the first semiconductor layer, and the electrode region. Thus, the light emitted by the semiconductor light-emitting element towards the sidewalls and the light emitted towards the side of the second semiconductor layer can be reflected to the side of the first semiconductor layer for emission, thereby improving the light-emitting efficiency of the light-emitting device and the light-emitting efficiency of the display device. Moreover, the metal reflective layer provided by the present invention is also in contact with the first semiconductor layer, and at least a part of the metal reflective layer can indirectly serve as an electrode, thereby increasing the contact area between the first electrode and the first semiconductor layer, ensuring high uniformity of the current in the semiconductor light-emitting element, further improving the light-emitting efficiency of the light-emitting device, and further improving the light-emitting efficiency of the display panel.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and more specifically, to a light-emitting device, a display panel and a display apparatus. Background Art

[0002] A micro-LED display panel includes a plurality of micro-LEDs, wherein the micro-LEDs are fixed on a substrate, and the substrate includes a driving circuit electrically connected to the micro-LEDs, and the driving circuit drives and controls the micro-LEDs to emit light. Compared with an organic light-emitting diode (OLED) display panel, a micro-LED display panel has attracted more and more attention due to its advantages such as higher display brightness, better luminous efficiency, longer life and lower power consumption. Although a micro-LED display panel has many advantages, the luminous efficiency of existing micro-LED display panels needs to be improved. Summary of the invention

[0003] In view of this, the present invention provides a light-emitting device, a display panel and a display apparatus, which effectively solve the existing technical problems, improve the light-emitting efficiency of the light-emitting device, and improve the light-emitting efficiency of the display panel.

[0004] To achieve the above purpose, the technical solution provided by the present invention is as follows:

[0005] A light emitting device, comprising:

[0006] A semiconductor light emitting element, the semiconductor light emitting element comprising a first semiconductor layer, a surface of one side of the first semiconductor layer comprising a light emitting region and an electrode region; a light emitting layer located in the light emitting region; and a second semiconductor layer located on a side of the light emitting layer away from the first semiconductor layer;

[0007] a reflective structure covering the sidewall of the semiconductor light-emitting element, the surface of the second semiconductor layer facing away from the first semiconductor layer, and the electrode region, the reflective structure comprising a metal reflective layer, a first hollow and a second hollow, the first hollow being located in the electrode region, and a vertical projection of the second hollow on the surface of the first semiconductor layer facing the light-emitting layer is located in the light-emitting region; wherein the metal reflective layer comprises a first portion in contact with the first semiconductor layer;

[0008] And, a first electrode at least partially located in the first hollow and in contact with the first semiconductor layer, and a second electrode at least partially located in the second hollow and in contact with the second semiconductor layer.

[0009] Accordingly, the present invention further provides a display panel, comprising:

[0010] A plurality of light emitting devices as described above;

[0011] The circuit substrate comprises a plurality of setting areas, and the setting area comprises a first connecting electrode and a second connecting electrode, wherein the first connecting electrode is connected to the first electrode of the light emitting device, and the second connecting electrode is connected to the second electrode of the light emitting device.

[0012] Correspondingly, the present invention further provides a display device, comprising the above-mentioned display panel.

[0013] Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:

[0014] The present invention provides a light-emitting device, a display panel and a display apparatus, comprising: a semiconductor light-emitting element, the semiconductor light-emitting element comprising a first semiconductor layer, a surface of one side of the first semiconductor layer comprising a light-emitting area and an electrode area; a light-emitting layer located in the light-emitting area; and a second semiconductor layer located on a side of the light-emitting layer away from the first semiconductor layer; a reflective structure covering the side wall of the semiconductor light-emitting element, the surface of the second semiconductor layer away from the first semiconductor layer and the electrode area, the reflective structure comprising a metal reflective layer, a first hollow and a second hollow, the first hollow being located in the electrode area, and a vertical projection of the second hollow on the surface of the first semiconductor layer facing the light-emitting layer is located in the light-emitting area; wherein the metal reflective layer comprises a first portion in contact with the first semiconductor layer; and a first electrode at least partially located in the first hollow and in contact with the first semiconductor layer, and a second electrode at least partially located in the second hollow and in contact with the second semiconductor layer.

[0015] From the above content, it can be known that in the technical solution provided by the present invention, the reflective structure covers the side wall of the semiconductor light-emitting element, the surface of the second semiconductor layer away from the first semiconductor layer, and the electrode area, and can further reflect the light emitted from the semiconductor light-emitting element to the side wall and the light emitted to one side of the second semiconductor layer to the first semiconductor layer, thereby improving the luminous efficiency of the light-emitting device and the luminous efficiency of the display panel. In addition, the metal reflective layer provided by the present invention is also in contact with the first semiconductor layer, and at least part of the metal reflective layer can indirectly serve as an electrode to increase the contact area between the first electrode and the first semiconductor layer, ensuring high uniformity of the current in the semiconductor light-emitting element, further improving the luminous efficiency of the light-emitting device, and further improving the luminous efficiency of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the provided drawings.

[0017] Figure 1 Schematic structural diagram of a light-emitting device provided by an embodiment of the present invention

[0018] Figure 2 is Figure 1 the sectional view along the AA' direction in

[0019] Figure 3 Schematic structural diagram of another light-emitting device provided by an embodiment of the present invention;

[0020] Figure 4 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0021] Figure 5 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0022] Figure 6 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0023] Figure 7 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0024] Figure 8 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0025] Figure 9 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0026] Figure 10 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0027] Figure 11 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0028] Figure 12 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0029] Figure 13 Schematic structural diagram of yet another light-emitting device provided by an embodiment of the present invention;

[0030] Figure 14A schematic diagram of the structure of a display panel provided by an embodiment of the present invention;

[0031] Figure 15 A schematic structural diagram of another display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] As described in the background art, compared with organic light emitting diode display panels, micro light emitting diode display panels have attracted more and more attention due to their advantages such as higher display brightness, better luminous efficiency, longer life and lower power consumption. Although micro light emitting diode display panels have many advantages, the luminous efficiency of existing micro light emitting diode display panels still needs to be improved.

[0034] Based on this, the embodiments of the present invention provide a light-emitting device, a display panel and a display apparatus, which effectively solve the existing technical problems, improve the light-emitting efficiency of the light-emitting device, and improve the light-emitting efficiency of the display panel.

[0035] To achieve the above purpose, the technical solution provided by the embodiment of the present invention is as follows, specifically combined with Figures 1 to 15 The technical solution provided by the embodiment of the present invention is described in detail.

[0036] refer to Figure 1 and Figure 2 As shown, Figure 1 A schematic diagram of the structure of a light emitting device provided by an embodiment of the present invention, Figure 2 for Figure 1 A cross-sectional view along the AA' direction, wherein the light emitting device comprises:

[0037] A semiconductor light emitting element, the semiconductor light emitting element comprises a first semiconductor layer 110, a surface of one side of the first semiconductor layer 110 comprises a light emitting area 112 and an electrode area 111; a light emitting layer 130 located in the light emitting area 112; and a second semiconductor layer 120 located on a side of the light emitting layer 130 away from the first semiconductor layer 110.

[0038] A reflective structure 200 covering the sidewalls of the semiconductor light-emitting element, the surface of the second semiconductor layer 120 facing away from the first semiconductor layer 110, and the electrode region 111. The reflective structure 200 includes a metal reflective layer 210, a first hollow 221, and a second hollow 222. The first hollow 221 is located in the electrode region 111, and the perpendicular projection of the second hollow 222 on the surface of the first semiconductor layer 110 facing the light-emitting layer 130 is located in the light-emitting region 112. Wherein, the metal reflective layer 210 includes a first portion 2101 in contact with the first semiconductor layer 110.

[0039] And, a first electrode 310 at least partially located in the first hollow 221 and in contact with the first semiconductor layer 110, and a second electrode 320 at least partially located in the second hollow 222 and in contact with the second semiconductor layer 120.

[0040] In an embodiment of the present invention, one of the first semiconductor layer 110 and the second semiconductor layer 120 provided by the present invention may be an N-type semiconductor layer, and the other may be a P-type semiconductor layer. And, the first electrode 310 and the second electrode 320 provided by the embodiments of the present invention are insulated from each other, and the first portion 2101 and the second electrode 320 are insulated from each other, avoiding the situation of short circuit caused by their connection.

[0041] In an embodiment of the present invention, the area of the light-emitting region 112 provided by the present invention is larger than the area of the electrode region 111. That is, the surface of the first semiconductor layer 110 close to the second semiconductor layer 120 is divided into two regions, namely the light-emitting region 112 and the electrode region 111. Setting the area of the light-emitting region 112 to be larger than the area of the electrode region 111 can ensure a large area of the light-emitting layer 130 formed on the light-emitting region 112 and improve the light-emitting efficiency of the light-emitting device.

[0042] It can be understood that for the technical solution provided by the embodiments of the present invention, the reflective structure 200 covers the sidewalls of the semiconductor light-emitting element, the surface of the second semiconductor layer 120 facing away from the first semiconductor layer 110, and the electrode region 111. As Figure 1As shown, the reflective structure 200 covers the sidewalls of the first semiconductor layer 110, the light-emitting layer 130, and the second semiconductor layer 120. Moreover, the reflective structure 200 also covers the surface of the second semiconductor layer 120 facing away from the first semiconductor layer 110 and the electrode region 111. Thus, the light emitted from the light-emitting layer 130 and directed towards the sidewalls of the semiconductor light-emitting element and the light directed towards the second semiconductor layer 120 can both be reflected to the first semiconductor layer 110 side for emission, thereby improving the light-emitting efficiency of the light-emitting device and the light-emitting efficiency of the display device. In addition, the metal reflective layer 210 provided in the embodiment of the present invention is also in contact with the first semiconductor layer 110. The first portion 2101 of the metal reflective layer 210 can indirectly serve as an electrode, increasing the contact area between the first electrode 310 and the first semiconductor layer 110. This enables the current in the semiconductor light-emitting element to flow in the direction of the large-area first electrode 310, ensuring a high uniformity of the current in the semiconductor light-emitting element and avoiding excessive concentration of the current in the semiconductor light-emitting element, further improving the light-emitting efficiency of the light-emitting device and the light-emitting efficiency of the display device.

[0043] Combined with the following drawings, taking the cross-section of the light-emitting device (such as the cross-section along the Figure 1 AA' direction shown) as an example, the technical solution provided in the embodiment of the present invention will be described in more detail.

[0044] Refer to Figure 3 As shown, it is a schematic structural diagram of another light-emitting device provided in the embodiment of the present invention. Among them, the reflective structure 200 provided in the present invention includes a first insulating layer 231 located between the metal reflective layer 210 and the semiconductor light-emitting element. The first insulating layer 231 at least partially covers the exposed surfaces of the second semiconductor layer 120 and the light-emitting layer 130. And the first insulating layer 231 has a reflective hollow corresponding to the first portion 2101, and at least part of the first portion 2101 fills the reflective hollow, so that the first portion 2101 is in contact with the first semiconductor layer 110. And a second insulating layer 232 located on the side of the metal reflective layer 210 away from the first insulating layer 231.

[0045] It can be understood that in the reflection structure provided by the embodiments of the present invention, a first insulating layer 231 is disposed between the metal reflection layer 210 and the semiconductor light-emitting element, and the first insulating layer 231 is disposed to at least partially cover the exposed surfaces of the second semiconductor layer 120 and the light-emitting layer 130. Thereby, it can be avoided that the metal reflection layer 210 contacts the second semiconductor layer 120, and further, the situation that the metal reflection layer 210 directly connects the first semiconductor layer 110 and the second semiconductor layer 120 is avoided, ensuring the normal light emission of the light-emitting device. Moreover, the embodiments of the present invention further provide a second insulating layer 232 to cover the exposed surface of the metal reflection layer 210, achieving the purpose of protecting the metal reflection layer 210, further avoiding the wear of the metal reflection layer 210, and also ensuring insulation from the external environment, thereby avoiding interference of the first semiconductor layer 110 by external signals.

[0046] Reference Figure 4 As shown, it is a schematic structural diagram of another light-emitting device provided by the embodiments of the present invention. Among them, the reflection hollow provided by the embodiments of the present invention at least covers the electrode region 111, that is, the first portion 2101 of the metal reflection layer 210 provided by the embodiments of the present invention at least partially covers the electrode region 111. Thereby, the first portion 2101 can indirectly serve as an electrode, increasing the contact area between the first electrode 310 and the first semiconductor layer 110, ensuring high uniformity of the current in the semiconductor light-emitting element, further improving the light-emitting efficiency of the light-emitting device, and further improving the light-emitting efficiency of the display device.

[0047] Furthermore, the reflection hollow provided by the embodiments of the present invention further extends to cover at least a part of the sidewall of the first semiconductor layer 110. As Figure 5 shown, it is a schematic structural diagram of another light-emitting device provided by the embodiments of the present invention. Among them, the reflection hollow of the first insulating layer 231 further extends to cover at least a part of the sidewall of the first semiconductor layer 110, that is, while the first portion 2101 of the metal reflection layer 210 at least partially covers the electrode region 111, it further extends to cover at least a part of the sidewall of the first semiconductor layer 110, further increasing the contact area between the first portion 2101 and the first semiconductor layer 110, which is equivalent to further increasing the contact area between the first electrode 310 and the first semiconductor layer 110, ensuring high uniformity of the current in the semiconductor light-emitting element, further improving the light-emitting efficiency of the light-emitting device, and further improving the light-emitting efficiency of the display device.

[0048] In an embodiment of the present invention, when the first portion 2101 of the metal reflective layer 210 provided by the present invention covers the electrode region 111, since the first electrode 310 is located in the electrode region, wherein the first portion 2101 can be isolated and insulated from the first electrode 310 at the first hollow 221, so as to prevent the first electrode 310 from being connected to the second electrode 320 and / or the second semiconductor layer 120 through the metal reflective layer 210. As Figures 6 to 8 shown, Figures 6 to 8 is a schematic structural diagram of three light-emitting devices provided by an embodiment of the present invention. Among them, the first insulating layer 231 and / or the second insulating layer 232 cover the side walls of the first hollow 221 (as Figure 6 shown, the first insulating layer 231 covers the side walls of the first hollow 221, Figure 7 shown, the second insulating layer 232 covers the side walls of the first hollow 221, and Figure 8 shown, both the first insulating layer 231 and the second insulating layer 232 partially cover the side walls of the first hollow 221), so that the first portion 2101 and the first electrode 310 are isolated and insulated from each other at the first hollow 221, which can prevent the signal of the first electrode 310 from being transmitted to the second electrode 320 through the metal reflective layer 210 and then transmitted to the second semiconductor layer 120, thereby ensuring the normal light emission of the light-emitting device.

[0049] Alternatively, the first portion 2101 provided by the embodiment of the present invention can also be in direct contact with the first electrode 310 located in the electrode region 111, further increasing the contact area between the first electrode 310 and the first semiconductor layer 110. As Figure 4 shown, the first insulating layer 231 and the second insulating layer 232 expose the side walls of the first hollow 221, and the first electrode 310 is in contact with the first portion 2101 at the side walls of the first hollow 221, further increasing the contact area between the first electrode 310 and the first semiconductor layer 110, ensuring high uniformity of the current in the semiconductor light-emitting element, further improving the light-emitting efficiency of the light-emitting device, and further improving the light-emitting efficiency of the display device.

[0050] In an embodiment of the present invention, the metal reflective layer 210 provided by the present invention may further include a second portion 2102 surrounding the second hollow 222, wherein the second portion 2102 can cover the light-emitting region 112. In order to prevent the first electrode 310 from being connected to the second electrode 320 and / or the second semiconductor layer 120 through the metal reflective layer 210, isolation is required between the first portion 2101 and the second portion 2202. As Figure 9As shown, it is a schematic structural diagram of another light-emitting device provided by an embodiment of the present invention. Among them, the metal reflection layer 210 includes at least a second part 2102 surrounding the second hollow 222. The second part 2102 is insulated and isolated from the first part 2101. Among them, the second part 2101 can be isolated from the semiconductor light-emitting element through the first insulating layer 231. Optionally, between the second part 2102 and the first part 2101 provided by the embodiment of the present invention, they can be isolated through the isolation part 233 of the first insulating layer 231 and / or the second insulating layer 232, that is, the isolation part 233 can be formed by the first insulating layer 231, or the isolation part 233 can be formed by the second insulating layer 232, or the isolation part 233 can be partially formed by the first insulating layer 231 and partially formed by the second insulating layer 232. The present invention does not make specific limitations on this.

[0051] Alternatively, the second electrode 320 provided by the embodiment of the present invention can also be in contact with the second part 2102 of the metal reflection layer 210. As Figure 10 As shown, it is a schematic structural diagram of another light-emitting device provided by an embodiment of the present invention. Among them, the first insulating layer 231 and the second insulating layer 232 expose the side wall of the second hollow 222, and the second electrode 320 is in contact with the second part 2102 at the side wall of the second hollow 222, so that the second part 2102 is connected to the second electrode 320 and has the same electric potential, avoiding the formation of a coupling capacitance between the second part 2102 and the semiconductor light-emitting element, and ensuring high performance of the light-emitting device.

[0052] In an embodiment of the present invention, the second part 2102 provided by the present invention does not overlap with the first semiconductor layer 110 in a predetermined direction, so as to reduce the coupling between the second part 2102 and the first semiconductor layer 110; among them, the predetermined direction can be the direction perpendicular to the plane where the side wall of the light-emitting device is located.

[0053] In an embodiment of the present invention, since the size of the light-emitting device is small, in the case where the first electrode 310 is in contact with the first part 2101 and the second electrode 320 is in contact with the second part 2102, etc., in order to prevent short-circuiting between the first part 2101 and the second part 2102, more isolation structures can be formed between the first part 2101 and the second part 2102. As Figure 11As shown, it is a schematic structural diagram of another light-emitting device provided by an embodiment of the present invention. In the light-emitting device provided by the embodiment of the present invention, at least one third part 2103 is further included between the first part 2101 and the second part 2102. The first part 2101 and the third part 2103, the second part 2102 and the third part 2103, and adjacent third parts 2103 are all isolated from each other. Among them, the isolation structures between the first part 2101 and the third part 2103, between the second part 2102 and the third part 2103, and between adjacent third parts 2103 are formed by the first insulating layer 231 and / or the second insulating layer 232 (it should be noted that the isolation structure formed by the first insulating layer 231 and / or the second insulating layer 232 can be combined Figures 6 - 8 As shown, that is, the isolation structure can be formed by the first insulating layer 231 alone, or the isolation structure can be formed by the second insulating layer 232 alone, or the isolation structure can be partially formed by the first insulating layer 231 and partially formed by the second insulating layer 232). Furthermore, by forming more isolation structures between the first part 2101 and the second part 2102, while ensuring the reflection function of the metal reflection layer 210, the risk of short circuit between the first part 2101 and the second part 2102 is reduced, and the reliability of the light-emitting device is improved.

[0054] In an embodiment of the present invention, the first electrode 310 provided by the present invention may include a plurality of sub-electrodes, ensuring a large contact area between the first electrode 310 and the first semiconductor layer 110. As Figure 12 As shown, it is a schematic structural diagram of another light-emitting device provided by an embodiment of the present invention. In the present invention, the first hollow 221 includes a plurality of first sub-hollows 2210, and the first electrode 310 includes a plurality of first sub-electrodes 3100. The first sub-electrodes 3100 are located in the first sub-hollows 2210 and are in contact with the first semiconductor layer 110, increasing the contact area between the first electrode 310 and the first semiconductor layer 110, ensuring high uniformity of current in the semiconductor light-emitting element, further improving the light-emitting efficiency of the light-emitting device, and further improving the light-emitting efficiency of the display device.

[0055] Similarly, as Figure 12 As shown, the second hollow 222 provided by the embodiment of the present invention includes a plurality of second sub-hollows 2220, and the second electrode 320 includes a plurality of second sub-electrodes 3200. The second sub-electrodes 3200 are located in the second sub-hollows 2220 and are in contact with the second semiconductor layer 120. In this way, the contact area between the second electrode 320 and the second semiconductor layer 120 can be increased, further ensuring high uniformity of current in the semiconductor light-emitting element, improving the light-emitting efficiency of the light-emitting device, and further improving the light-emitting efficiency of the display device.

[0056] As Figure 13 shown, it is a schematic structural diagram of another light-emitting device provided by an embodiment of the present invention. Among them, the surface of the first semiconductor layer 110 facing away from the second semiconductor layer 120 is the first surface 1101, and this first surface 1101 is the surface of the first semiconductor layer 110 in the light-emitting direction of the light-emitting device; in the direction Y from the first semiconductor layer 110 to the second semiconductor layer 120, the relationship between the distance a from the surface of the light-emitting layer 130 facing away from the second semiconductor layer 120 to the first surface 1101 and the distance b from the electrode region 111 to the first surface 1101 is: a > b. A step structure is formed between the electrode region 111 of the first semiconductor layer 110 and the light-emitting layer 130, which can further improve the light extraction efficiency of the light-emitting device.

[0057] In any of the above embodiments of the present invention, the metal reflective layer provided by the present invention includes at least one of Al and Ag, ensuring high reflection effect of the metal reflective layer and good electrical conductivity when used as an electrode. The present invention does not make specific limitations on this.

[0058] Correspondingly, an embodiment of the present invention further provides a display panel. As Figure 14 shown, it is a schematic structural diagram of a display panel provided by an embodiment of the present invention. Among them, the display panel includes:

[0059] Multiple light-emitting devices 10 provided by any of the above embodiments.

[0060] A circuit board 20, the circuit board 20 includes multiple setting areas, and the setting area includes a first connection electrode 21 and a second connection electrode 22. The first connection electrode 21 is connected to the first electrode 310 of the light-emitting device 10, and the second connection electrode 22 is connected to the second electrode 320 of the light-emitting device 10. Optionally, the light-emitting device 10 provided by the present invention can be a micro light-emitting diode.

[0061] As Figure 15 shown, it is a schematic structural diagram of another display device provided by an embodiment of the present invention. Among them, the display device 1000 provided by an embodiment of the present invention can be a mobile phone.

[0062] It should be noted that the display device provided by the embodiment of the present invention can also be a notebook, a tablet computer, a computer, a wearable device, etc. The present invention does not make specific limitations on this.

[0063] An embodiment of the present invention provides a light-emitting device, a display panel, and a display device, including: a semiconductor light-emitting element, the semiconductor light-emitting element including a first semiconductor layer, one side surface of the first semiconductor layer including a light-emitting region and an electrode region; a light-emitting layer located in the light-emitting region; and a second semiconductor layer located on a side of the light-emitting layer facing away from the first semiconductor layer; a reflection structure covering side walls of the semiconductor light-emitting element, a surface of the second semiconductor layer facing away from the first semiconductor layer, and the electrode region, the reflection structure including a metal reflection layer, a first hollow, and a second hollow, the first hollow being located in the electrode region, and a vertical projection of the second hollow on a surface of the first semiconductor layer facing the light-emitting layer being located in the light-emitting region; wherein the metal reflection layer includes a first portion in contact with the first semiconductor layer; and a first electrode at least partially located in the first hollow and in contact with the first semiconductor layer, and a second electrode at least partially located in the second hollow and in contact with the second semiconductor layer.

[0064] As can be seen from the above, in the technical solution provided by the embodiment of the present invention, the reflection structure covers the side walls of the semiconductor light-emitting element, the surface of the second semiconductor layer facing away from the first semiconductor layer, and the electrode region, so that light emitted by the semiconductor light-emitting element towards the side walls and light emitted towards the second semiconductor layer can be reflected to the side of the first semiconductor layer for emission, thereby improving the light-emitting efficiency of the light-emitting device and the light-emitting efficiency of the display device. Moreover, the metal reflection layer provided by the embodiment of the present invention is also in contact with the first semiconductor layer, and at least part of the metal reflection layer can indirectly serve as an electrode to increase the contact area between the first electrode and the first semiconductor layer, ensuring high uniformity of current in the semiconductor light-emitting element, further improving the light-emitting efficiency of the light-emitting device, and further improving the light-emitting efficiency of the display panel.

[0065] In the description of the present invention, it should be understood that terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0066] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0067] In the present invention, unless otherwise clearly defined and limited, terms such as "installed", "connected", "connected to", "fixed" and the like should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection, an electrical connection or communicable with each other; it may be directly connected, or indirectly connected through an intermediate medium, and may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0068] In the present invention, unless otherwise clearly defined and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0069] In the present invention, terms such as "an embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0070] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A light-emitting device, characterized in that, Comprising: A semiconductor light-emitting element, which includes a first semiconductor layer, and one side surface of the first semiconductor layer includes a light-emitting region and an electrode region; A light-emitting layer located in the light-emitting region; And a second semiconductor layer located on a side of the light-emitting layer away from the first semiconductor layer; A reflection structure covering sidewalls of the semiconductor light-emitting element, a surface of the second semiconductor layer away from the first semiconductor layer, and the electrode region. The reflection structure includes a metal reflection layer, a first hollow portion, and a second hollow portion. The first hollow portion is located in the electrode region, and a perpendicular projection of the second hollow portion on a surface of the first semiconductor layer facing the light-emitting layer is located in the light-emitting region. Wherein, the metal reflection layer includes a first portion in contact with the first semiconductor layer; and, the metal reflection layer includes a second portion isolated from the first portion, and the second portion is isolated from the semiconductor light-emitting element; And, a first electrode at least partially located in the first hollow portion and in contact with the first semiconductor layer, and a second electrode at least partially located in the second hollow portion and in contact with the second semiconductor layer, and the second portion is electrically connected to the second electrode.

2. The light-emitting device according to claim 1, wherein, The reflection structure includes a first insulating layer located between the metal reflection layer and the semiconductor light-emitting element. The first insulating layer at least partially covers exposed surfaces of the second semiconductor layer and the light-emitting layer, and a reflection hollow portion is provided at a position corresponding to the first portion of the first insulating layer; And, a second insulating layer located on a side of the metal reflection layer away from the first insulating layer.

3. The light-emitting device according to claim 2, characterized in that, The reflection hollow portion at least covers the electrode region.

4. The light-emitting device according to claim 3, wherein The reflection hollow portion further extends to cover at least part of sidewalls of the first semiconductor layer.

5. The light-emitting device according to claim 4, wherein An area of the light-emitting region is larger than an area of the electrode region.

6. The light-emitting device according to claim 3, wherein The first insulating layer and / or the second insulating layer cover sidewalls of the first hollow portion; or, the first insulating layer and the second insulating layer expose sidewalls of the first hollow portion, and the first electrode contacts the first portion at sidewalls of the first hollow portion.

7. The light-emitting device according to claim 2, characterized in that, The metal reflection layer includes a second portion at least surrounding the second hollow portion, and the second portion is isolated from the first portion; Wherein, the first insulating layer and / or the second insulating layer cover sidewalls of the second hollow portion; or, the first insulating layer and the second insulating layer expose sidewalls of the second hollow portion, and the second electrode contacts the second portion at sidewalls of the second hollow portion.

8. The light-emitting device according to claim 7, wherein, The second portion covers the light-emitting region.

9. The light-emitting device according to claim 7, wherein At least one third portion is further included between the first portion and the second portion. The first portion and the third portion, the second portion and the third portion, and adjacent third portions are all isolated from each other.

10. The light-emitting device according to claim 1, characterized in that, The first hollow portion includes a plurality of first sub-hollow portions, and the first electrode includes a plurality of first sub-electrodes. The first sub-electrodes are located in the first sub-hollow portions and in contact with the first semiconductor layer.

11. The light-emitting device according to claim 1, wherein The second hollow portion includes a plurality of second sub-hollow portions, and the second electrode includes a plurality of second sub-electrodes. The second sub-electrodes are located in the second sub-hollow portions and in contact with the second semiconductor layer.

12. The light-emitting device according to claim 1, wherein The surface of the first semiconductor layer facing away from the second semiconductor layer is the first surface; In the direction from the first semiconductor layer to the second semiconductor layer, the relationship between the distance a from the surface of the light-emitting layer facing away from the second semiconductor layer to the first surface and the distance b from the electrode region to the first surface is: a > b.

13. The light-emitting device according to claim 1, wherein, The metal reflective layer includes at least one of Al and Ag.

14. A display panel, characterized in that, Comprising: Multiple light-emitting devices according to any one of claims 1-13; A circuit board, the circuit board includes a plurality of setting areas, and the setting areas include a first connection electrode and a second connection electrode. The first connection electrode is connected to the first electrode of the light-emitting device, and the second connection electrode is connected to the second electrode of the light-emitting device.

15. A display device, characterized in that, Comprising: The display panel according to claim 14.

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