Photodetectors, modulators, semiconductor devices and semiconductor devices
By designing the combination of parallel waveguide segments and active elements in photodetectors and modulators, electro-optic signal conversion and modulation are optimized, solving the problem of low manufacturing and operating efficiency in existing technologies and achieving more efficient signal processing.
CN115280228BActive Publication Date: 2026-06-30BLACK SEMICON GMBH
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BLACK SEMICON GMBH
- Filing Date
- 2021-02-23
- Publication Date
- 2026-06-30
AI Technical Summary
Technical Problem
Existing photodetectors and modulators have room for improvement in manufacturing and operation, making it difficult to achieve efficient electro-optic signal conversion and modulation.
Method used
A photodetector and modulator are designed in which waveguide segments are parallel to each other and spaced apart to form a gap, an active element is in contact with a gate electrode, a pn junction is formed using silicon or other materials, and absorption and electro-optic signal generation are optimized by combining a dielectric coating and appropriate material selection.
Benefits of technology
It achieves more efficient electromagnetic radiation absorption and electro-optic signal conversion, improving the device's operational performance and signal processing capabilities.
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Figure CN115280228B_ABST
Abstract
The present invention relates to a photodetector (3) comprising: a longitudinal portion (12) of a waveguide (11) comprising or formed of two waveguide segments (12a, 12b) extending at least substantially parallel to each other in the longitudinal direction and preferably spaced apart from each other in the transverse direction to form a gap (14) therebetween; and an active element (13) stacked on the longitudinal portion (12) of the waveguide and comprising or composed of at least one material that absorbs electromagnetic radiation of at least one wavelength and generates an electro-optic signal due to absorption, wherein each of the two waveguide segments (12a, 12b) is in contact with a gate electrode (15a, 15b) at least in some portions, on at least one side, particularly on the side facing the active element (14), the gate electrode (15a, 15b) preferably comprising or composed of silicon.
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