Organic light-emitting diode displays

Abstract

An organic light-emitting diode display is disclosed. In one aspect, the display includes: a substrate; a display unit located on the substrate and including a display area and a non-display area surrounding the display area; and a thin film encapsulation layer that seals the display unit. The display also includes: a voltage line formed in the non-display area and surrounding the display area; a metal layer formed of the same material as the voltage line; and a dam surrounding the display area and contacting the voltage line. The voltage line includes a first voltage line disposed on one side of the display area. The first voltage line includes a pair of first ends and a pair of first connectors respectively connected to the pair of first ends and extending from the display area. The metal layer is disposed between the pair of first connectors. The dam contacts the metal layer.

Description

[0001] Incorporation by reference of any priority application

[0002] This application claims the benefit of Korean Patent Application No. 10-2015-0107415, filed on Jul. 29, 2015, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The described technology generally relates to organic light emitting diode (OLED) displays. Background Art

[0004] OLED displays typically include a hole injection electrode, an electron injection electrode, and an OLED disposed therebetween. When holes emitted from the hole injection electrode recombine with electrons emitted from the electron injection electrode in an organic emission layer, excitons are generated, which emit light.

[0005] OLED displays are designed to be driven by low voltage and manufactured to be lightweight and thin. Furthermore, these displays have excellent characteristics such as wide viewing angles, high contrast, and fast refresh rates, and therefore have attracted attention as next-generation display devices. However, because the characteristics of OLEDs can be degraded by environmental conditions such as external moisture and oxygen, OLEDs should be protected from environmental influences. Summary of the Invention

[0006] One inventive aspect relates to an OLED display.

[0007] On the other hand is an OLED display comprising: a substrate; a display unit located on the substrate and including a display area and a non-display area located outside the display area; a thin film encapsulation layer for sealing the display unit; a voltage line formed in the non-display area and surrounding the display area; and a dam unit having at least a portion contacting the voltage line, wherein the voltage line comprises a first voltage line arranged to correspond to a side of the display area, wherein the first voltage line comprises a pair of first end portions and a pair of first connection units respectively connected to the pair of first end portions, wherein a metal layer comprising the same material as that of the voltage line is arranged between the pair of first connection units, and wherein the dam unit comprises at least two dams and has at least a portion contacting the metal layer.

[0008] The dam unit may include a first dam and a second dam spaced apart from each other, wherein the first dam surrounds the display area, and the second dam surrounds the first dam.

[0009] The height of the second dam may be higher than that of the first dam.

[0010] The metal layer can insulate the voltage lines.

[0011] The display unit may include at least one thin film transistor, and the metal layer may be formed on the same layer as a source electrode and a drain electrode of the thin film transistor.

[0012] The metal layer may be located at a lower portion of the dam unit.

[0013] The display unit may include a thin film transistor, an organic light emitting device electrically connected to the thin film transistor, and a planarization layer disposed between the thin film transistor and the organic light emitting device, and the dam unit is formed on the same layer as the planarization layer.

[0014] The display unit may further include a pixel defining layer defining the pixel area, and the dam unit may include a first layer formed on the same layer as the planarization layer and a second layer formed on the same layer as the pixel defining layer.

[0015] The first layer and the second layer may be integrally formed.

[0016] The thin film encapsulation layer may include at least one inorganic layer and at least one organic layer, and the at least one organic layer may be located inside the dam unit.

[0017] The voltage line may include a second voltage line surrounding a pair of first end portions and other sides of the display area, and the second voltage line may include a pair of second end portions bent to surround the outside of the pair of first end portions, and a pair of second connection units respectively connected to the pair of second end portions.

[0018] The dam unit may contact the second voltage line outside the other side of the display area, and the dam unit may have a straight line shape outside one side of the display area while contacting the pair of second end portions, the pair of first connection units, and the metal layer.

[0019] The display unit may further include a pad unit for applying an electrical signal to the display area, the display unit may be disposed outside one side of the display area, and the pair of first connection units and the pair of second connection units may be connected to the pad unit.

[0020] The metal layer may be formed continuously with the first voltage line.

[0021] The first voltage line may extend to the dam formed at the outermost portion.

[0022] The voltage line may include a second voltage line surrounding the pair of first end portions and the other side of the display area, and an outer side of the metal layer and an outer side of the second voltage line may be located on the same line outside one side of the display area.

[0023] The thin film transistor may include an active layer, a gate electrode, a source electrode, and a drain electrode, a gate insulating layer may be arranged between the active layer and the gate electrode, an interlayer insulating layer may be arranged between the gate electrode, the source electrode, and the drain electrode, the gate insulating layer and the interlayer insulating layer may extend to a non-display area, and the thin film encapsulation layer may include at least one inorganic layer contacting the gate insulating layer or the interlayer insulating layer outside the dam unit.

[0024] At least one inorganic layer may contact the top surface of the substrate by passing through an end portion of the interlayer insulating layer.

[0025] On the other hand is an organic light emitting diode (OLED) display comprising: a substrate; a display unit located on the substrate and including a display area and a non-display area located outside the display area; a thin film encapsulation layer sealing the display unit; a voltage line formed in the non-display area and surrounding the display area; a metal layer formed of the same material as the voltage line; and a dam having at least a portion contacting the voltage line, wherein the voltage line comprises a first voltage line arranged on one side of the display area, wherein the first voltage line comprises a pair of first ends and a pair of first connectors respectively connected to the pair of first ends and extending from the display area, wherein the metal layer is arranged between the pair of first connectors, and wherein the dam contacts the metal layer.

[0026] In the above-mentioned OLED display, the dam includes a first dam and a second dam spaced apart from each other, wherein the first dam surrounds the display area, and wherein the second dam surrounds the first dam.

[0027] In the above OLED display, the second dam has a height greater than that of the first dam.

[0028] In the above-mentioned OLED display, the metal layer is electrically insulated from the voltage line.

[0029] In the above-mentioned OLED display, a display unit includes at least one thin film transistor (TFT), wherein the TFT includes a source electrode and a drain electrode, and wherein a metal layer is formed on the same layer as the source electrode and the drain electrode.

[0030] In the above-mentioned OLED display, the metal layer is located below the dam.

[0031] In the above-mentioned OLED display, a display unit includes a thin film transistor (TFT), an OLED electrically connected to the TFT, and a planarization layer disposed between the TFT and the OLED, wherein the dam is formed on the same layer as the planarization layer.

[0032] In the above OLED display, the display unit further includes a pixel defining layer defining the pixel area, wherein the dam includes a first layer formed on the same layer as the planarization layer and a second layer formed on the same layer as the pixel defining layer.

[0033] In the above-mentioned OLED display, the first layer and the second layer are integrally formed.

[0034] In the above OLED display, the thin film encapsulation layer is formed of at least one inorganic layer and at least one organic layer, wherein the at least one organic layer is located inside the dam.

[0035] In the above-mentioned OLED display, the voltage line includes a second voltage line surrounding a pair of first end portions, wherein the second voltage line includes a pair of second end portions bent to at least partially surround the outer sides of the pair of first end portions, and a pair of second connectors parallel to the pair of first connectors and extending from the pair of second end portions.

[0036] In the above OLED display, the dam contacts the second voltage line outside the remaining sides of the display area, wherein a portion of the dam has a straight line shape and contacts the pair of second end portions, the pair of first connectors, and the metal layer.

[0037] In the above OLED display, the display unit further includes a pad unit configured to apply an electrical signal to the display area, wherein the pad unit is disposed in the non-display area, and wherein the pair of first connectors and the pair of second connectors are connected to the pad unit.

[0038] In the above OLED display, the metal layer is integrally formed with the first voltage line.

[0039] In the above OLED display, the dam includes a plurality of dams, and wherein the first voltage line extends to an outermost dam.

[0040] In the above OLED display, the voltage line includes a second voltage line surrounding the pair of first end portions and the remaining side of the display area, wherein the metal layer and the outer side of the second voltage line overlap in a depth dimension of the OLED.

[0041] In the above-mentioned OLED display, the TFT includes an active layer, a gate electrode, a source electrode and a drain electrode, wherein the OLED display further includes: a gate insulating layer, arranged between the active layer and the gate electrode; and an interlayer insulating layer, arranged between the gate electrode and the source electrode and the drain electrode, wherein the gate insulating layer and the interlayer insulating layer extend from the display area to the non-display area, and wherein the thin film encapsulation layer includes at least one inorganic layer contacting the gate insulating layer or the interlayer insulating layer outside the dam.

[0042] In the above OLED display, at least one inorganic layer has a portion of a top surface contacting the substrate.

[0043] On the other hand, an organic light emitting diode (OLED) display includes: a display unit, including a display area and a non-display area surrounding the display area; a voltage line formed in the non-display area and surrounding the display area; a plurality of dams formed in the non-display area and surrounding the display area; and a metal layer arranged adjacent to the voltage line, wherein the metal layer and the voltage line overlap with the dam in a depth dimension of the OLED display.

[0044] In the above-mentioned OLED display, the voltage line includes a first voltage line arranged on one side of the display area, wherein the first voltage line includes a pair of first ends and a pair of first connectors respectively connected to the pair of first ends, wherein the metal layer is arranged between the pair of first connectors, and wherein the dam overlaps with the first connector in the depth dimension of the OLED display.

[0045] In the above OLED display, the voltage line includes a second voltage line overlapping the dam. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 is a schematic plan view of an OLED display according to an exemplary embodiment.

[0047] Figure 2 yes Figure 1 Schematic enlarged plan view of region A.

[0048] Figure 3 It is along Figure 2 Schematic cross-sectional view taken along line II-II'.

[0049] Figure 4 is a cross-sectional view of a display unit according to an exemplary embodiment.

[0050] Figure 5 is a cross-sectional view of an OLED display according to another exemplary embodiment.

[0051] Figure 6 is a cross-sectional view of an OLED display according to another exemplary embodiment.

[0052] Figure 7 is a cross-sectional view of an OLED display according to another exemplary embodiment.

[0053] Figure 8 is a cross-sectional view of an OLED display according to another exemplary embodiment.

[0054] Figure 9 is a schematic plan view of an OLED display according to another exemplary embodiment.

[0055] Figure 10 yes Figure 9Schematic enlarged plan view of region B.

[0056] Figure 11 It is along Figure 10 A schematic cross-sectional view taken along line XX'.

[0057] Figure 12 is a cross-sectional view of an OLED display according to another exemplary embodiment. DETAILED DESCRIPTION

[0058] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the exemplary embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, exemplary embodiments are described below solely with reference to the accompanying drawings to illustrate various aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Terms such as "at least one of...", when placed after a list of elements, modify the entire list of elements and do not modify the individual elements in the list.

[0059] Since the described technology may have many variations and several embodiments, exemplary embodiments are shown in the drawings and will be described in detail. The advantages, features, and methods of implementation will be described in detail with reference to the embodiments described in detail below in conjunction with the drawings. However, the embodiments may have different forms and should not be construed as limited to the description set forth herein.

[0060] The embodiments of the described technology will be described in more detail below with reference to the accompanying drawings. Regardless of the figure number, those components that are the same or correspond to each other are given the same reference numerals, and redundant explanations are omitted.

[0061] It will be understood that although the terms "first," "second," etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are only used to distinguish one component from another.

[0062] Unless otherwise defined in the context, a singular expression includes a plural expression.

[0063] In the following embodiments, it will be further understood that the terms “include” and / or “have” used herein indicate the presence of the described features or components, but do not preclude the presence or addition of one or more other features or components.

[0064] In addition, in the drawings, the size of the elements may be exaggerated or reduced for ease of description. In other words, since the size and thickness of the components are arbitrarily shown in the drawings for ease of explanation, the following embodiments are not limited thereto.

[0065] When the exemplary embodiment can be implemented in another way, the predetermined process order may be different from the described order. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described order. In the present disclosure, the term "substantially" includes completely, almost completely, or in some applications and to any significant extent as understood by those skilled in the art. In addition, "formed, set or arranged above..." may also mean "formed, set or arranged on...". The term "connected" includes electrically connected.

[0066] Figure 1 is a schematic plan view of an OLED display 1000 according to an exemplary embodiment. Figure 2 yes Figure 1 Schematic enlarged plan view of region A. Figure 3 It is along Figure 2 Schematic cross-sectional view taken along line II-II'. Figure 4 is a cross-sectional view of a display unit according to an exemplary embodiment.

[0067] Reference Figures 1 to 4 An OLED display 1000 according to an exemplary embodiment includes a substrate 100, a display unit 200 positioned on the substrate 100, a thin film encapsulation layer 300 for sealing the display unit 200, voltage lines 10a and 20 formed in a non-display area and surrounding a display area DA, and a dam unit (or dam) 50a having at least a portion contacting the voltage lines 10a and 20.

[0068] The substrate 100 may include various materials. According to an exemplary embodiment, the substrate 100 includes a SiO2-based transparent glass material, but is not limited thereto. The substrate 100 may include a transparent plastic material. The plastic material may be an organic material selected from the group consisting of polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyacrylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC), and cellulose acetate propionate (CAP), which are insulating organic materials.

[0069] When OLED display 1000 is a bottom-emission display device in which an image is formed in a direction toward substrate 100, substrate 100 should be formed of a transparent material. However, when OLED display 1000 is a top-emission display device in which an image is formed in a direction away from substrate 100, substrate 100 does not need to include a transparent material. In this case, substrate 100 may be formed of a metal. When substrate 100 includes a metal, substrate 100 may include, but is not limited to, at least one of the following materials: iron, chromium, manganese, nickel, titanium, molybdenum, stainless steel (SUS), Invar alloy, Inconel alloy, and Kovar alloy.

[0070] The display unit 200 may be formed on the substrate 100. The display unit 200 may include a display area DA in which an image is formed and viewed by a user, and a non-display area as a periphery of the display area DA.

[0071] The OLED may be disposed in the display area DA, and the voltage lines 10 a and 20 may be disposed in the non-display area and supply power to the OLED.

[0072] In the non-display area, a pad unit PAD may be further included, and the pad unit PAD may transmit an electrical signal from a power source (not shown) or a signal generator (not shown) to the display area DA.

[0073] The pad unit PAD may include a driver IC 410 , a pad 430 connecting the driver IC 410 to the pixel circuit, and a fan-out line 420 .

[0074] The driver IC 410 may include a data driving unit (or data driver) for supplying a data signal to the pixel circuit and various functional units for driving the pixel circuit. The driver IC 410 may be mounted on the substrate 100 as a chip on glass (COG) type. A connection terminal (not shown) electrically connected to the pad 430 formed on the substrate 100 may be provided on one side of the driver IC 410. An adhesive material including conductive balls and capable of electrical connection may be provided between the pad 430 and the connection terminal (not shown) to bond the pad 430 and the connection terminal (not shown). Examples of the adhesive material may include an anisotropic conductive film, a spontaneous conductive film, and the like.

[0075] The pad 430 may be a component formed on the substrate 100 and electrically connected to the connection terminal of the driver IC 410. The pad 430 may be electrically connected to the fan-out line 420. Figure 1As shown, the pad 430 may be provided on a layer different from the layer of the fan-out line 420, but is not limited thereto. The pad 430 may extend from the fan-out line 420 and be provided on the same layer as the fan-out line 420. The pad 430 may include one or more layers including at least one material selected from molybdenum (Mo), aluminum (Al), copper (Cu), silver (Ag), and titanium (Ti).

[0076] The fan-out line 420 may connect the pad 430 to the pixel circuit. The fan-out line 420 may be formed of the same material and on the same layer as the gate electrode G. That is, the fan-out line 420 may be provided on the gate insulating layer 210 .

[0077] The following will refer to Figure 4 The display unit 200 is described in more detail.

[0078] A buffer layer 110 may be formed on the substrate 100. The buffer layer 110 may provide a flat surface on the substrate 100 and prevent impurities or moisture from penetrating the substrate 100. For example, the buffer layer 110 may be formed of an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, titanium nitride, or the like; an organic material such as polyimide, polyester, or acrylic resin; or a stacked structure including multiple materials thereof. The buffer layer 110 may be formed on the display area DA and extend into the non-display area.

[0079] The display area DA may have, for example, a rectangular shape. A thin film transistor TFT and an OLED electrically connected to the thin film transistor TFT may be disposed in the display area DA.

[0080] The thin film transistor TFT may include an active layer A, a gate electrode G, a source electrode S, and a drain electrode D.

[0081] The thin film transistor TFT is a top gate transistor in which an active layer A, a gate electrode G, a source electrode S, and a drain electrode D are sequentially formed in this order. However, exemplary embodiments are not limited thereto, and various other types of thin film transistors, such as a bottom gate transistor, may be used as the thin film transistor TFT.

[0082] The active layer A may be formed of polysilicon and may include a channel region not doped with impurities and a source region and a drain region doped with impurities on both sides of the channel region. In this regard, the impurities may vary depending on the type of the thin film transistor TFT and may be N-type impurities or P-type impurities.

[0083] After the active layer A is formed, a gate insulating layer 210 may be formed on the active layer A over the entire surface of the substrate 100. The gate insulating layer 210 may include a multilayer structure or a single layer formed of an inorganic material such as silicon oxide or silicon nitride. The gate insulating layer 210 may insulate the active layer A from the gate electrode G disposed on the active layer A. The gate insulating layer 210 may extend not only to the display area DA but also to a portion of the non-display area.

[0084] After the gate insulating layer 210 is formed, a gate electrode G may be formed on the gate insulating layer 210. The gate electrode G may be formed using a photolithography process and an etching process.

[0085] A gate electrode G may be formed on the gate insulating layer 210. The gate electrode G may be connected to a gate line (not shown) that applies an on / off signal to the thin film transistor TFT.

[0086] The gate electrode G may include a low-resistance metal material. By taking into account the adhesion strength between the gate electrode G and the layers adjacent thereto, surface flatness, and processability of the stacked layers, the gate electrode G may include a single layer or multiple layers using, for example, at least one of the following materials: aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu).

[0087] After the gate electrode G is formed, an interlayer insulating layer 230 may be formed over the entire surface of the substrate 100. The interlayer insulating layer 230 may insulate between the source and drain electrodes S and D and the gate electrode G. The interlayer insulating layer 230 may extend not only to the display area DA but also to a portion of the non-display area.

[0088] The interlayer insulating layer 230 may be formed of an inorganic material. According to an exemplary embodiment, the interlayer insulating layer 230 is formed of a metal oxide or a metal nitride. Examples of the inorganic material may include silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), and zirconium oxide (ZrO2).

[0089] The interlayer insulating layer 230 may include a multilayer structure or a single layer formed of an inorganic material such as silicon oxide (SiOx) and / or silicon nitride (SiNx). In some exemplary embodiments, the interlayer insulating layer 230 may have a double-layer structure of SiOx / SiNy or SiNx / SiOy.

[0090] The source electrode S and drain electrode D of the thin film transistor TFT may be disposed on the interlayer insulating layer 230. Each of the source electrode S and drain electrode D may include a single layer or multiple layers containing, for example, at least one of the following materials: aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). The source electrode S and drain electrode D may be formed to contact the region of the active layer A.

[0091] The planarization layer 250 may be formed over the entire surface of the substrate 100 and cover the source electrode S and the drain electrode D. The planarization layer 250 may remove steps formed by the thin film transistor TFT, planarize the upper surface of the substrate 100, and prevent OLED malfunction due to underlying uneven structures.

[0092] Planarization layer 250 may be formed of an insulating material. For example, planarization layer 250 may be formed of an inorganic material, an organic material, or an organic / inorganic composite material using various deposition methods and may have a single-layer or multi-layer structure. In some exemplary embodiments, planarization layer 250 may be formed of at least one of the following materials: acrylic resin (polyacrylic resin), epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene (BCB).

[0093] The OLED may be disposed on the planarization layer 250. The OLED may include a pixel electrode 281, an intermediate layer 283 including an organic emission layer, and an opposite electrode 285. Figure 4 As shown, the pixel electrode 281 may be electrically connected to the drain electrode D.

[0094] The pixel electrode 281 and / or the counter electrode 285 may include a transparent electrode or a reflective electrode. When the pixel electrode 281 and / or the counter electrode 285 include a transparent electrode, the transparent electrode may include ITO, IZO, ZnO, or In2O3. When the pixel electrode 281 and / or the counter electrode 285 include a reflective electrode, the reflective electrode may include a reflective layer and a transparent layer, the reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof, and the transparent layer including ITO, IZO, ZnO, or In2O3. In some exemplary embodiments, the pixel electrode 281 or the counter electrode 285 may have an ITO / Ag / ITO structure.

[0095] The pixel electrode 281 may be formed on the planarization layer 250 and electrically connected to the thin film transistor TFT through a contact hole formed in the planarization layer 250. For example, the pixel electrode 281 is a reflective electrode. For example, the pixel electrode 281 includes a reflective film and a transparent or translucent electrode layer formed on the reflective film, wherein the reflective film is formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a combination thereof. The transparent or translucent electrode layer may include at least one of the following materials: indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO).

[0096] The opposing electrode 285 disposed opposite the pixel electrode 281 may be a transparent or translucent electrode and may include a metal film having a low work function, such as Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, or a combination thereof. An auxiliary electrode layer or a bus electrode may be further formed on the metal film using materials used to form transparent electrodes, such as ITO, IZO, ZnO, In2O3, and the like. Therefore, the opposing electrode 285 may allow light emitted from the organic emission layer included in the intermediate layer 283 to pass therethrough. That is, light emitted from the organic emission layer may be reflected directly or by the pixel electrode 281 serving as a reflective electrode, and emitted toward the opposing electrode 285.

[0097] However, the display unit 200 according to the present embodiment is not limited to a top emission type display device, and may be a bottom emission type display device in which light emitted from the organic emission layer is emitted toward the substrate 100. In this case, the pixel electrode 281 may be a transparent or semi-transparent electrode, and the opposite electrode 285 may be a reflective electrode. In addition, the display unit 200 according to the present embodiment may be a dual emission type display device in which light is emitted in two directions, along its front surface and bottom surface.

[0098] A pixel defining layer 270 formed of an insulating material may be disposed on the opposite electrode 285. The pixel defining layer 270 may be formed of at least one organic insulating material selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin by spin coating or the like.

[0099] The pixel defining layer 270 may be used to define a pixel region and a non-pixel region. The pixel defining layer 270 may be formed on the substrate 100 and include an opening partially exposing the pixel electrode 281. Figure 3As shown, the thin film encapsulation layer 300 can seal the display unit 200 and prevent external oxygen and moisture from penetrating into the display unit 200. The thin film encapsulation layer 300 may include a plurality of organic layers 330 and a plurality of inorganic layers 310. The organic layers 330 and the inorganic layers 310 may be alternately stacked to form a multilayer structure. An example of a thin film encapsulation layer 300 including two organic layers 330a and 330b and two inorganic layers 310a and 310b is shown in FIG. Figure 3 , but the exemplary embodiments are not limited thereto.

[0100] Each of the organic layers 330 a and 330 b may include, for example, at least one of acrylic-based resin, methacrylic-based resin, polyisoprene, vinyl resin, epoxy-based resin, urethane-based resin, cellulose-based resin, and perylene-based resin.

[0101] The inorganic layers 310a and 310b may each include, for example, at least one of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride (SiON).

[0102] like Figure 1 As shown, the voltage lines 10 a and 20 and the dam unit 50 a surrounding the display area DA may be disposed in the non-display area outside the display area DA.

[0103] The voltage lines 10a and 20 may be formed of the same material as the source electrode S and the drain electrode D. The voltage lines 10a and 20 may include a first voltage line 10a and a second voltage line 20. According to an exemplary embodiment, the first voltage line 10a is a driving voltage line ELVDD, and the second voltage line 20 may be a common voltage line ELVSS. The second voltage line 20 may be connected to the opposite electrode 285.

[0104] The first voltage line 10a may be provided to correspond to at least one side of the display area DA. The first voltage line 10a may include a pair of first end portions 11 formed parallel to one side of the display area DA. In this regard, the at least one side corresponding to the first voltage line 10a may be a side adjacent to the pad unit PAD.

[0105] The second voltage line 20 may surround the pair of first end portions 11 of the first voltage line 10 a and other sides of the display area DA.

[0106] The second voltage line 20 may include a pair of second end portions 21 bent to surround the outer sides of the pair of first end portions 11. Each of the first end portions 11 may be disposed between the display area DA and the pair of second end portions 21.

[0107] The first voltage line 10a may include a pair of first connection units (or connectors) 12a. The second voltage line 20 may include a pair of second connection units 22. The pair of first connection units 12a may extend in a direction perpendicular to (or intersecting with) the pair of first end portions 11. The pair of second connection units 22 may be formed from the pair of second end portions 21 parallel to the pair of first connection units 12a.

[0108] A pair of first connection units 12a and a pair of second connection units 22 may be connected to the pad unit PAD located outside of at least one side of the display area DA.

[0109] At least a portion of the dam unit 50 a may be formed to contact the first voltage line 10 a and / or the second voltage line 20 .

[0110] The dam unit 50a may surround four sides of the display area DA outside the display area DA and be integrally connected around the four sides of the display area DA. That is, the dam unit 50a may continuously surround the four sides of the display area DA in a ring shape.

[0111] When forming the organic layer 330 of the thin film encapsulation layer 300 for sealing the display unit 100 , the dam unit 50 a may prevent the organic material from flowing along the edge of the substrate 100 , thereby preventing the formation of an edge tail of the organic layer 330 .

[0112] like Figure 3 As shown, the organic layer 330 of the thin film encapsulation layer 300 may be formed larger than the inorganic layer 310. In this regard, when forming the organic layer 330, the dam unit 50a may prevent the organic material from flowing along the edge of the substrate 100. The organic layer 330 may be disposed inside the dam unit 50a.

[0113] According to an exemplary embodiment, the inorganic layers 310 extend outside the dam unit 50a and contact each other. At least one of the inorganic layers 310 may contact the gate insulating layer 210 or the interlayer insulating layer 230 outside the dam unit 50a, thereby preventing external moisture from penetrating into the side surface of the thin film encapsulation layer 300 and improving the adhesive strength of the thin film encapsulation layer 300.

[0114] According to exemplary embodiments, outside the dam unit 50a, at least one of the inorganic layers 310 contacts the top surface of the substrate 100 by passing through the end of the interlayer insulating layer 230, and may contact the side surfaces of the gate insulating layer 210 and the interlayer insulating layer 230. Therefore, the edge of the inorganic layer 310 may be separated, thereby preventing the encapsulation characteristics of the thin film encapsulation layer 300 from being weakened and removed.

[0115] The dam unit 50 a of the OLED display 1000 according to the present embodiment may include at least two dams.

[0116] According to an exemplary embodiment, Figures 1 to 3 As shown, the dam unit 50a includes a first dam 51a and a second dam 53a, the second dam 53a being spaced apart from the first dam 51a by a predetermined distance and formed outside the first dam 51a.

[0117] The dam unit 50a may include at least two dams, thereby effectively blocking the backflow of the organic material and preventing the flow of the organic material when only one dam is provided.

[0118] Although Figures 1 to 3 An embodiment is shown in which the dam unit 50a includes the first dam 51a and the second dam 53a, but the number of dams is not limited thereto as long as at least two dams are provided.

[0119] Although Figures 1 to 3 In the embodiment, the first dam 51 a and the second dam 53 a have the same height, but when two or more dams are formed, the height of the dam unit 50 a may increase toward the outside of the substrate 100 .

[0120] When the organic layer 330 is formed inside the innermost first dam 51 a on the substrate 100 , the organic layer 330 of the thin film encapsulation layer 300 of the OLED display 1000 according to the present embodiment may prevent the organic material from diffusing and overflowing due to the dam unit 50 a .

[0121] That is, the dam unit 50a may provide a double dam including the first dam 51a and the second dam 53a, such that no organic layer may be formed between the first dam 51a and the second dam 53a because the organic material is prevented from diffusing and overflowing due to the first dam 51a.

[0122] No organic layer may be formed between the first dam 51 a and the second dam 53 a , thereby effectively preventing the infiltration of external moisture.

[0123] The dam unit 50a may include an organic material. According to an exemplary embodiment, the dam unit 50a may include at least one organic insulating material selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0124] The metal layer 30a may be formed between a pair of first connection units 12a of the first voltage line 10a. Figure 3 As shown, the metal layer 30 a may be positioned below the dam unit 50 a to contact the dam unit 50 a .

[0125] Therefore, the metal layer 30 a may improve the adhesive strength of the dam unit 50 a formed between the pair of first connection units 12 a .

[0126] When the dam unit 50a includes an organic material, the organic material of the dam unit 50a has a weaker adhesive strength than the inorganic material. Therefore, when the dam unit 50a is attached to the inorganic material, separation may occur, and external moisture or oxygen may penetrate, thereby damaging the OLED.

[0127] In the OLED display 1000 according to the present embodiment, the dam unit 50a may be integrally connected and continuously surround the four sides of the display area DA, and the metal layer 30a may contact the lower portion of the dam unit 50a located between the pair of first connection units 12a, thereby improving the adhesive strength of the dam unit 50a.

[0128] The region in which the metal layer 30a is formed is not limited. Therefore, as long as at least a portion of the metal layer 30a is located below the dam unit 50, the metal layer 30a may be formed between a pair of connection units 12a without limitation.

[0129] According to example embodiments, the metal layer 30a may be formed together with the first voltage line 10a. Therefore, the metal layer 30a may be formed on the same layer and of the same material as the first voltage line 10a.

[0130] According to example embodiments, the metal layer 30a may be formed of at least one of the following materials: aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu).

[0131] As another alternative embodiment, the metal layer 30a is formed together with the source electrode S and the drain electrode D of the thin film transistor TFT. Therefore, the metal layer 30a may be formed on the same layer and may include the same material as the source electrode S and the drain electrode D.

[0132] like Figure 3 As shown, the dam unit 50 a is formed on the same layer and made of the same material as the planarization layer 250 .

[0133] The metal layer 30a may be formed below the dam unit 50a, and thus, the lower portion of the dam unit 50a may contact the metal layer 30a. The dam unit 50a may be formed above the metal layer 30a and have a height substantially the same as that of the planarization layer 250. However, the height of the dam unit 50a is not limited thereto.

[0134] According to an exemplary embodiment, the dam unit 50a is formed of an organic insulating material including at least one material from among acrylic resin (polyacrylic resin), epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene (BCB).

[0135] like Figure 1 As shown, the dam unit 50 a of the OLED display 1000 according to the present embodiment may be formed to contact the second voltage line 20 located on at least three sides of the display area DA.

[0136] That is, the second dam 53 a formed at the outermost portion in the dam unit 50 a may be formed to contact edges of the second voltage line 20 located on at least three sides of the display area DA.

[0137] On one side of the display area DA corresponding to the side where the first end portion 11 of the first voltage line 10a is disposed, the dam unit 50a surrounding the display area DA may be integrally and continuously connected and may have at least a portion contacting the second end portion 21. At other portions of the dam unit 50a, at least a portion of the dam unit 50a may contact the first connection unit 12a. At other portions of the dam unit 50a, at least a portion of the dam unit 50a may contact the metal layer 30a.

[0138] Therefore, at least three sides of the dam unit 50a including the four sides of the ring shape may contact the second voltage line 20, and one side of the dam unit 50a may contact the second end portion 21, the first connection unit 12a and the metal layer 30a, thereby improving the adhesive strength of the dam unit 50a.

[0139] Figure 5 is a cross-sectional view of an OLED display 2000 according to another exemplary embodiment. Figures 1 to 4 and Figure 5 Like reference numerals denote like elements throughout, and thus redundant descriptions thereof are omitted for simplicity of explanation.

[0140] The dam unit 50b of the OLED display 2000 according to the present embodiment may have Figures 1 to 3 The dam unit 50a has the same function as that of the OLED display 1000 shown in FIG. 1 , and thus the difference between the two will now be described.

[0141] The dam unit 50b may include at least two dams and may be integrally connected and surround four sides of the display area DA outside the display area DA. That is, the dam unit 50b may continuously surround the four sides of the display area DA in a ring shape.

[0142] The dam unit 50b may contact the metal layer 30a between a pair of first connection units 12a (see FIG. Figure 1 ), thus improving the adhesive strength of the dam unit 50b, thereby reducing the possibility that external moisture or oxygen may penetrate and improving the reliability of the OLED.

[0143] According to an exemplary embodiment, the dam unit 50 b includes a portion formed on the same layer as the planarization layer 250 and a portion formed on the same layer as the pixel defining layer 270 .

[0144] That is, when forming the planarization layer 250 , a portion of the dam unit 50 b may be formed on the same layer as the planarization layer 250 , and when forming the pixel defining layer 270 , a portion of the dam unit 50 b may be formed on the same layer as the pixel defining layer 270 .

[0145] A portion of the dam unit 50b formed on the same layer as the pixel defining layer 270 may be formed of the same material as the pixel defining layer 270. According to an exemplary embodiment, a portion of the dam unit 50b is formed of at least one organic insulating material selected from the group consisting of polyimide, polyamide, acrylic resin, and benzocyclobutene.

[0146] A portion of the dam unit 50 b formed on the same layer as the planarization layer 250 and a portion of the dam unit 50 b formed on the same layer as the pixel defining layer 270 may be integrally formed.

[0147] The organic layer 330 may be prevented from spreading and overflowing by the first dam 51 b , and thus, the organic layer 330 may not be formed between the first dam 51 b and the second dam 53 b .

[0148] No organic layer 330 may be formed between the first dam 51 b and the second dam 53 b , and the organic layer 330 may be formed inside the first dam 51 b , thereby effectively preventing the infiltration of external moisture.

[0149] like Figure 5 As shown, the dam unit 50b may be formed above the metal layer 30a and have the same height as that of the planarization layer 250 and the pixel defining layer 270. However, the height of the dam unit 50b is not limited thereto.

[0150] According to example embodiments, the first dam 51b and the second dam 53b are formed to have different heights. That is, the height of the second dam 53b located on the outer side of the substrate 100 may be relatively higher than that of the first dam 51b.

[0151] Figure 6 is a cross-sectional view of an OLED display 3000 according to another exemplary embodiment. Figures 1 to 4 and Figure 6Like reference numerals denote like elements throughout, and thus redundant descriptions thereof are omitted for simplicity of explanation.

[0152] The dam unit 50 c of the OLED display 3000 according to the present embodiment may have the same function as that of the above-described dam units 50 a and 50 b , and thus, for convenience of description, the difference between the two will now be described.

[0153] The dam unit 50c of the OLED display 3000 according to the present embodiment may include a first dam 51c and a second dam 53b having different heights. That is, the height of the second dam 53b may be higher than that of the first dam 51c.

[0154] In this case, when the pixel defining layer 270 is formed, the first dam 51c may include the same material as the pixel defining layer 270, and when the planarization layer 250 is formed, the lower portion of the second dam 53b may include the same material as the planarization layer 250, and then when the pixel defining layer 270 is formed, the upper portion of the second dam 53b may include the same material as the pixel defining layer 270 and the first dam 51c.

[0155] That is, when forming the planarization layer 250 and / or the pixel defining layer 270, the dam unit 50c may include the same material as the planarization layer 250 and / or the pixel defining layer 270. In this case, the height and material of the dam unit 50c are not limited.

[0156] According to an exemplary embodiment, a portion of the second dam 53b formed on the same layer as the planarization layer 250 and a portion of the second dam 53b formed on the same layer as the pixel defining layer 270 may include the same material so that the upper and lower portions of the second dam 53b may be integrally formed.

[0157] No organic layer may be formed between the first dam 51 c and the second dam 53 b , and the organic layer 330 may be formed inside the first dam 51 c , thereby effectively preventing the infiltration of external moisture.

[0158] Figure 7 is a cross-sectional view of an OLED display 4000 according to another exemplary embodiment. Figures 1 to 4 and Figure 7 Like reference numerals denote like elements throughout, and thus redundant descriptions thereof are omitted for simplicity of explanation.

[0159] The metal layer 30b of the OLED display 4000 according to the present embodiment may be formed only at the lower portion of the dam unit 50a. That is, the metal layer 30b may be completely located at the lower portion of the dam unit 50a to contact the dam unit 50a.

[0160] According to this embodiment, the metal layer 30b can be formed between the inorganic layers such as the gate insulating layer 210, the interlayer insulating layer 230, etc. and the dam unit 50a, thereby improving the adhesive strength of the dam unit 50a and effectively preventing the penetration of external moisture or oxygen to improve the reliability of the OLED.

[0161] According to example embodiments, the metal layer 30 b may be formed on the same layer as the source electrode S and the drain electrode D of the thin film transistor TFT and include the same material as that of the source electrode S and the drain electrode D.

[0162] The dam unit 50 a may include a first dam 51 a and a second dam 53 a , and may be formed on the same layer as the planarization layer 250 and include the same material as that of the planarization layer 250 .

[0163] like Figure 7 As shown, the dam unit 50a has substantially the same height as the planarization layer 250, but the height of the dam unit 50a is not limited thereto. According to example embodiments, the height of the second dam 53a located outside the substrate 100 may be greater than that of the first dam 51a.

[0164] Figure 8 is a cross-sectional view of an OLED display 5000 according to another exemplary embodiment. Figures 1 to 5 and Figure 8 Like reference numerals denote like elements throughout, and thus redundant descriptions thereof are omitted for simplicity of explanation.

[0165] In the OLED display 5000 according to the present exemplary embodiment, the metal layer 30b is completely located under the dam unit 50b and contacts the dam unit 50b. That is, the metal layer 30b may be formed only in the region where the dam unit 50b is formed.

[0166] The metal layer 30b may be formed in a lower portion of a region where the dam unit 50b is formed, thereby improving adhesive strength of the dam unit 50b and effectively blocking penetration of external moisture or oxygen to improve reliability of the OLED.

[0167] According to an exemplary embodiment, the metal layer 30 b is formed on the same layer as the first voltage line 10 a and is formed of the same material as the first voltage line 10 a .

[0168] As another alternative embodiment, the metal layer 30 b is formed on the same layer as the source electrode S and the drain electrode D of the thin film transistor TFT, and is formed of the same material as the source electrode S and the drain electrode D.

[0169] The dam unit 50 b may include a first dam 51 b and a second dam 53 b , and according to example embodiments, the dam unit 50 b may include a portion formed on the same layer as the planarization layer 250 and a portion formed on the same layer as the pixel defining layer 270 .

[0170] like Figure 8 As shown, the first dam 51b and the second dam 53b may have the same height, but the height of the first dam 51b is not limited thereto. The height of the second dam 53b located outside the substrate 100 may be relatively higher than that of the first dam 51b.

[0171] According to an exemplary embodiment, when the planarization layer 250 is formed, the lower portion of the dam unit 50b may be formed together with the planarization layer 250, and then when the pixel defining layer 270 is formed, the upper portions of the first dam 51b and the second dam 53b may be formed together with the pixel defining layer 270.

[0172] According to an exemplary embodiment, a portion of the dam unit 50 b formed on the same layer as the planarization layer 250 and a portion of the dam unit 50 b formed on the same layer as the pixel defining layer 270 are formed of the same material and are integrally formed.

[0173] Figure 9 is a schematic plan view of an OLED display 6000 according to another exemplary embodiment. Figure 10 yes Figure 9 Schematic enlarged plan view of region B. Figure 11 It is along Figure 10 A schematic cross-sectional view taken along line XX'.

[0174] exist Figures 1 to 4 and Figures 9 to 11 Like reference numerals denote like elements throughout, and thus redundant descriptions thereof are omitted for simplicity of explanation.

[0175] The OLED display 6000 according to the present exemplary embodiment may include a substrate 100, a display unit 200 positioned on the substrate 100, a thin film encapsulation layer 300 for sealing the display unit 200, voltage lines 10b and 20 formed in a non-display area and surrounding a display area DA, and a dam unit 50a having at least a portion contacting the voltage lines 10b and 20.

[0176] The first voltage line 10b may be disposed to correspond to at least one side of the display area DA. In this regard, the at least one side corresponding to the first voltage line 10b may be a side adjacent to the pad unit PAD.

[0177] The first voltage line 10b may include a pair of first connection units 12b connected to the pad unit PAD.

[0178] A metal layer may be disposed between the pair of first connection units 12b. The dam unit 50a may contact the metal layer between the first connection units 12b and may be integrally connected and continuously surround the display area DA.

[0179] like Figure 9 As shown, the metal layer of the OLED display 6000 according to the present embodiment is formed by extending the first voltage line 10b.

[0180] That is, the metal layer may not be provided between the first connection units 12b, but may be formed by extending the first voltage line 10b to the blank area between the first connection units 12b when forming the first voltage line 10b, so that the lower portion of the dam unit 50a can contact the first voltage line 10b between the first connection units 12b.

[0181] According to an exemplary embodiment, the first voltage line 10 b is formed by extending in such a manner that metal is filled between the first connection units 12 b without an empty space.

[0182] The first voltage line 10 b may be formed by extending to a region where the dam is formed at least at the outermost portion of the dam unit 50 a .

[0183] According to an exemplary embodiment, when the dam unit 50a includes the first dam 51a and the second dam 53a, the dam unit 50a is formed by extending to the region where the second dam 53a is formed. Therefore, the lower portions of the first dam 51a and the second dam 53a may be attached to the first voltage line 10b.

[0184] In the OLED display 6000 according to the present exemplary embodiment, the dam unit 50a completely contacts the lower portion of the first voltage line 10b between the first connection units 12b, thereby improving the adhesive strength of the dam unit 50a to reduce the possibility that external moisture or oxygen may penetrate and improve the reliability of the OLED.

[0185] The voltage lines 10b and 20 may include a second voltage line 20. The second voltage line 20 may include a pair of second end portions 21 bent to surround the outer sides of the pair of first end portions 11. Each of the first end portions 11 may be disposed between the display area DA and the pair of second end portions 21.

[0186] The second voltage line 20 may include a pair of second connection units 22. The pair of first connection units 12b may extend in a direction perpendicular to (or intersecting) the pair of first end portions 11. The pair of second connection units 22 may be formed parallel to the pair of first connection units 12b and extend from the pair of second end portions 21.

[0187] A pair of first connection units 12 b and a pair of second connection units 22 may be connected to the pad unit PAD located outside at least one side of the display area DA.

[0188] According to an exemplary embodiment, outer sides of the first voltage line 10 b and the second voltage line 20 are located on the same line outside a side of the display area DA where the first end portion 11 is located.

[0189] That is, the outer side of the external first voltage line 10b of the side where the first end portion 11 is set outside among the four sides of the display area DA can extend to the outer side of the second end portion 21 so that the outer sides of the first voltage line 10b and the second voltage line 20 can be located on the same line.

[0190] like Figure 11 As shown, the dam unit 50 a is formed on the same layer as the planarization layer 250 and is formed of the same material as the planarization layer 250 .

[0191] The first dam 51a and the second dam 53a may have the same height, but the height of the dam unit 50a is not limited thereto. The height of the second dam 53a located on the outer side on the substrate 100 may be relatively higher than that of the first dam 51a.

[0192] like Figure 11 As shown, the first voltage line 10b extends to the lower portion of the second dam 53a, and the first voltage line 10b is disposed between the dam unit 50a and the underlying inorganic layer, so that the dam unit 50a can contact the first voltage line 10b formed of a metal material, thereby improving the adhesive strength of the dam unit 50a.

[0193] Figure 12 is a cross-sectional view of an OLED display 7000 according to another exemplary embodiment. Figures 1 to 6 and Figure 12 Like reference numerals denote like elements throughout, and thus redundant descriptions thereof are omitted for simplicity of explanation.

[0194] In the OLED display 7000 according to the present exemplary embodiment, the first voltage line 10b extends to the area where the second dam 53b is formed, and the first voltage line 10b is disposed between the dam unit 50c and the underlying inorganic layer, so that the dam unit 50c can contact the first voltage line 10b formed of a metal material, thereby improving the adhesive strength of the dam unit 50c.

[0195] In the OLED display 7000 according to the present exemplary embodiment, the dam unit 50c includes the first dam 51c and the second dam 53b having different heights. That is, the height of the second dam 53b located on the outer side of the substrate 100 may be higher than that of the first dam 51c.

[0196] That is, when forming the planarization layer 250 , the lower portion of the dam unit 50 c may be formed together with the planarization layer 250 , and then when forming the pixel defining layer 270 , the upper portions of the first and second dams 51 c and 53 b may be formed together with the pixel defining layer 270 .

[0197] According to an exemplary embodiment, a portion of the dam unit 50 c formed on the same layer as the planarization layer 250 and a portion of the dam unit 50 c formed on the same layer as the pixel defining layer 270 are formed of the same material and are integrally formed.

[0198] No organic layer may be formed between the first dam 51 c and the second dam 53 b , and the organic layer 330 may be formed inside the first dam 51 c , thereby effectively preventing the infiltration of external moisture.

[0199] The lower portion of the second dam 53 b formed on the same layer as the planarization layer 250 and the upper portion of the second dam 53 b formed on the same layer as the pixel defining layer 270 may be formed of the same material and integrally formed.

[0200] As described above, according to one or more of the exemplary embodiments, reliability is improved by effectively preventing the penetration of external moisture or oxygen.

[0201] It should be understood that the exemplary embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each exemplary embodiment should generally be considered applicable to other similar features or aspects in other exemplary embodiments.

[0202] While the present technology has been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the following claims.

Claims

1. An organic light emitting diode display, comprising: A substrate including a display area and a non-display area; a buffer layer, located on the substrate; a plurality of thin film transistors located on the buffer layer, wherein the thin film transistors include an active layer, a gate electrode, a source electrode, and a drain electrode; a plurality of pixels including a plurality of light emitting layers between an upper electrode and a plurality of lower electrodes on the substrate; a thin film encapsulation layer, located on the upper electrode; a pixel defining layer, located on the substrate, wherein the pixel defining layer partially exposes the lower electrode; a first voltage line disposed in the non-display area and corresponding to at least one side of the display area, wherein the first voltage line includes a first side facing the display area and a second side opposite to the first side, and a metal layer protruding from the second side; a second voltage line disposed in the non-display area and corresponding to at least three sides of the display area; a first dam surrounding the display area; as well as The second dam, surrounding the first dam, The second dam is in contact with the metal layer and the second voltage line. 2 . The organic light emitting diode display according to claim 1 , wherein the second dam has a different height from that of the first dam. 3 . The organic light emitting diode display according to claim 1 , wherein the first dam is provided in one layer, and the second dam is provided in two layers. The organic light emitting diode display according to claim 1 , wherein the pixel defining layer covers edges of the pixels. 5 . The organic light emitting diode display of claim 4 , wherein the first dam is disposed in the same layer as the pixel defining layer, and the second dam includes a first layer and a second layer disposed in the same layer as the pixel defining layer. 6 . The organic light emitting diode display of claim 1 , wherein the first dam contacts the metal layer and the second voltage line.

7. The organic light emitting diode display according to claim 1, wherein the second voltage line includes a pair of second end portions bent to at least partially surround the outer sides of the pair of first end portions of the first voltage line, and a pair of connectors parallel to the metal layer and extending from the pair of second end portions.

8. The organic light emitting diode display according to claim 1, further comprising a thin film encapsulation layer covering the display area, wherein the thin film encapsulation layer comprises at least one inorganic layer and at least one organic layer, and wherein the at least one organic layer is located inside the first dam. 9 . The organic light emitting diode display according to claim 8 , wherein the at least one inorganic layer has a portion located outside the second dam.

10. An organic light emitting diode display, comprising: A substrate including a display area and a non-display area; An organic light emitting diode and a thin film transistor are arranged on the display area; a thin film encapsulation layer, disposed above the organic light emitting diode and the thin film transistor, the thin film encapsulation layer comprising a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer; a planarization layer, disposed between the organic light emitting diode and the thin film transistor; a first voltage line located in the non-display area and arranged to correspond to one side of the display area, wherein the first voltage line includes a first side facing the display area and a second side opposite to the first side, and a metal layer protruding from the second side; a second voltage line disposed in the non-display area and arranged to correspond to at least three sides of the display area; a first dam surrounding the display area; as well as The second dam, surrounding the first dam, wherein the second dam is in contact with the metal layer and the second voltage line, wherein the planarization layer covers the first side of the first voltage line, and The planarization layer extending from the display area is spaced apart from the first dam. 11 . The organic light emitting diode display according to claim 10 , wherein the organic encapsulation layer is located inside the first dam. 12 . The organic light emitting diode display of claim 10 , wherein the second inorganic encapsulating layer has a portion located outside the second dam. 13 . The organic light emitting diode display of claim 10 , wherein the second dam is disposed between an edge of the organic encapsulating layer and an edge of the second inorganic encapsulating layer. 14 . The organic light emitting diode display of claim 10 , wherein the first dam and the second dam are disposed between an edge of the organic encapsulating layer and an edge of the second inorganic encapsulating layer. 15 . The organic light emitting diode display of claim 10 , wherein the first dam is provided in one layer, and the second dam is provided in two layers.

16. The organic light emitting diode display according to claim 10, wherein the second voltage line includes a pair of second end portions bent to at least partially surround the outer sides of the pair of first end portions of the first voltage line, and a pair of connectors parallel to the metal layer and extending from the pair of second end portions.

17. An organic light emitting diode display, comprising: A substrate including a display area and a non-display area; a buffer layer, located on the substrate; A plurality of thin film transistors are located on the buffer layer, wherein the thin film transistors include an active layer, a gate electrode, a source electrode, and a drain electrode; a plurality of pixels including a plurality of light emitting layers between an upper electrode and a plurality of lower electrodes on the substrate; a thin film encapsulation layer, located on the upper electrode; a pixel defining layer, located on the substrate, wherein the pixel defining layer partially exposes the lower electrode; a first voltage line located in the non-display area and corresponding to a side of the display area, wherein the first voltage line includes a first side facing the display area and a second side opposite to the first side, and a metal layer protruding from the second side; a second voltage line disposed in the non-display area and corresponding to at least three sides of the display area; a first dam surrounding the display area; as well as The second dam, surrounding the first dam, wherein the thin film encapsulation layer covers the display area, wherein the thin film encapsulation layer includes at least one inorganic layer and at least one organic layer, and wherein the at least one organic layer is located inside the first dam, The second dam is in contact with the metal layer.

18. The organic light emitting diode display according to claim 17, wherein the second voltage line includes a pair of second end portions bent to partially surround the outer sides of the pair of first end portions of the first voltage line, and a pair of connectors parallel to the metal layer and extending from the pair of second end portions. 19 . The organic light emitting diode display according to claim 17 , wherein the at least one inorganic layer has a portion located outside the second dam.

20. An organic light emitting diode display, comprising: A substrate including a display area and a non-display area; a buffer layer, located on the substrate; A plurality of thin film transistors are located on the buffer layer, wherein the thin film transistors include an active layer, a gate electrode, a source electrode, and a drain electrode; a plurality of pixels including a plurality of light emitting layers between an upper electrode and a plurality of lower electrodes on the substrate; a thin film encapsulation layer, located on the upper electrode; a pixel defining layer, located on the substrate, wherein the pixel defining layer partially exposes the lower electrode; a first voltage line disposed in the non-display area and corresponding to a side of the display area, wherein the first voltage line includes a first side facing the display area and a second side opposite to the first side, and a metal layer protruding from the second side; a second voltage line disposed in the non-display area and corresponding to at least three sides of the display area; a first dam surrounding the display area; as well as a second dam surrounding the first dam, the second dam including a first layer and a second layer provided in the same layer as the pixel defining layer; The second dam is in contact with the metal layer and the second voltage line. 21 . The organic light emitting diode display of claim 20 , wherein the second dam has a different height from that of the first dam. 22 . The organic light emitting diode display of claim 20 , wherein the first dam is disposed in the same layer as the pixel defining layer. 23 . The organic light emitting diode display of claim 20 , wherein the first dam contacts the metal layer and the second voltage line. 24 . The organic light emitting diode display according to claim 20 , further comprising a thin film encapsulation layer covering the display area, wherein the thin film encapsulation layer comprises at least one inorganic layer and at least one organic layer, and wherein the at least one organic layer is located inside the first dam.

25. An organic light emitting diode display, comprising: A substrate including a display area and a non-display area; An organic light emitting diode and a thin film transistor are arranged in the display area; a thin film encapsulation layer, disposed above the organic light emitting diode and the thin film transistor; a first voltage line located in the non-display area and arranged to correspond to one side of the display area; a second voltage line disposed in the non-display area and spaced apart from the first voltage line with a gap therebetween; as well as a dam portion at least partially surrounding the display area, The dam portion includes a first portion extending in a first direction, and the first portion contacts the first voltage line, the gap, and the second voltage line.

26. The organic light emitting diode display according to claim 25, wherein the second voltage line corresponds to at least three sides of the display area, The dam portion further includes a second portion connected to a right side of the first portion and extending in a second direction intersecting the first direction, and a third portion connected to a left side of the second portion and extending in the second direction, and The second portion and the third portion are in contact with the second voltage line.

27. The organic light emitting diode display of claim 25, wherein the gap includes a first gap disposed on a left side of the first voltage line and a second gap disposed on a right side of the first voltage line, and the first portion of the dam contacts the first gap and the second gap. 28 . The organic light emitting diode display according to claim 25 , wherein the dam portion comprises a first dam surrounding the display area, and a second dam surrounding the first dam. 29 . The organic light emitting diode display of claim 28 , wherein the first dam contacts the first voltage line, the gap, and the second voltage line.

30. The organic light emitting diode display of claim 28, wherein the first dam and the second dam are in contact with the first voltage line, the gap, and the second voltage line.

31. The organic light emitting diode display according to claim 28, wherein the thin film encapsulation layer comprises a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer, and The organic encapsulating layer is not disposed between the first dam and the second dam.

32. The organic light emitting diode display according to claim 28, wherein the thin film encapsulation layer comprises a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer, and The organic encapsulation layer is located inside the first dam. 33 . The organic light emitting diode display of claim 32 , wherein the first inorganic encapsulating layer and the second inorganic encapsulating layer have portions located outside the second dam. 34 . The organic light emitting diode display according to claim 28 , wherein the second dam has a different height from that of the first dam. 35 . The organic light emitting diode display according to claim 28 , wherein the first dam is provided in one layer, and the second dam is provided in two layers.

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