Quantum tuning via permanent magnet flux element

Abstract

Systems and techniques for facilitating quantum tuning via permanent magnet flux elements are provided. In various embodiments, the system may include a qubit device. In various aspects, the system may further include a permanent magnet having a first magnetic flux, wherein the operating frequency of the qubit device is based on the first magnetic flux. In various cases, the system may further include an electromagnet having a second magnetic flux that tunes the first magnetic flux. In various cases, the permanent magnet may include a nanoparticle magnet. In various embodiments, the nanoparticle magnet may include manganese nanoparticles embedded in a silicon matrix. In various aspects, the system may also include electrodes that apply a current to the nanoparticle magnet in the presence of the second magnetic flux, thereby changing the strength of the first magnetic flux.

Description

Background Technology

[0001] This disclosure relates to quantum tuning, and more specifically to quantum tuning via permanent magnet flux elements.

[0002] Precise tuning of the operating frequency of qubits (e.g., flux tuning) can help improve the performance of quantum circuits. Generally, single-junction qubit devices (e.g., a single Josephson junction) have a fixed operating frequency. On the other hand, different multi-junction qubit devices can have variable operating frequencies, which are functions of the magnetic flux (e.g., magnetic field) exposed to these multi-junction qubit devices. For example, a SQUID loop (e.g., a superconducting quantum interference device loop, such as two Josephson junctions coupled in parallel) can have a total operating frequency based on and / or depending on the magnetic flux passing through the loop (e.g., between the two Josephson junctions). The operating frequency of such qubit devices can therefore be controlled / modulated by controlling / modulating the magnetic flux exposed to those qubit devices.

[0003] In various scenarios, each qubit device in a quantum circuit may require personalized / independent flux tuning to achieve a personalized / independent operating frequency. Furthermore, optimal quantum circuit performance may require maintaining each qubit device's personalized / independent operating frequency over personalized / independent time periods. To facilitate this flux tuning, personalized / independent magnetic flux may be required for each qubit device. In various scenarios, each magnetic flux may be required to persist over an associated time period, may be required to point only to its associated qubit device (e.g., otherwise, neighboring qubit devices may be erroneously affected, potentially introducing noise and reducing coherence), may be required to be uniform across its associated qubit device (e.g., otherwise, reducing coherence), and may be required to be strong enough to shift the operating frequency of its associated qubit device.

[0004] Conventionally, flux tuning of a qubit device is facilitated by an electromagnet (e.g., a flux coil, which generates magnetic flux when current is applied to it and does not generate magnetic flux when no current is applied to it). To facilitate flux tuning of the qubit device, current is applied to the electromagnet, causing it to emit magnetic flux onto the qubit device. The magnetic flux shifts, alters, influences, and / or otherwise affects the operating frequency of the qubit device. For example, the operating frequency of the qubit device may be a first value when not exposed to magnetic flux. When exposed to the magnetic flux of the electromagnet, the operating frequency of the qubit device may change from the first value to a second value. This second value may depend on and / or be based on the strength and / or orientation of the magnetic flux emitted by the electromagnet (e.g., depending on the magnetic flux exposed to the qubit device, the range of the second value may be much higher to only slightly higher than the first value, and / or depending on the magnetic flux exposed to the qubit device, the range of the second value may be much lower to only slightly lower than the first value). The intensity and / or orientation of the magnetic flux emitted by the electromagnet can be controlled / modulated by controlling / modulating the current applied to the electromagnet.

[0005] Conventional systems / techniques for facilitating flux tuning require a continuous and / or active flow of current. After all, an electromagnet used in a conventional system can only emit magnetic flux when current is actively applied to it. Once the current is no longer applied, the electromagnet stops emitting the magnetic flux, causing the operating frequency of the qubit device to return to its original / initial value. Therefore, conventional systems / techniques require current to flow throughout the entire timeframe at which the qubit device needs to be modulated / controlled at its operating frequency.

[0006] Several technical problems exist with using actively flowing current. Specifically, actively flowing current generates heat. Since proper operation of quantum circuits typically requires maintaining the surrounding environment at low temperatures, the additional heat generated by actively flowing current can increase the local temperature around the chip and / or components on which the quantum circuit is implemented, which can interfere with the proper operation of the quantum circuit. Furthermore, actively flowing current can be unstable. For example, the amplitude and / or phase of the current can experience perturbations (e.g., even when implementing voltage and / or current regulators), which can cause corresponding perturbations in the magnetic flux emitted by the electromagnet, which in turn can cause corresponding perturbations in the operating frequency of the qubit device. Such perturbations in the operating frequency of the qubit device can negatively affect the performance of the quantum circuit.

[0007] In various instances, embodiments of the present invention can solve one or more of the problems in the prior art. Summary of the Invention

[0008] The following overview is presented to provide a basic understanding of one or more embodiments of the invention. This overview is not intended to identify key or essential elements, or to depict any scope of a particular embodiment or any scope of the claims. Its sole purpose is to present concepts in a simplified form as a prelude to the more detailed description that follows. In one or more embodiments described herein, devices, systems, computer-implemented methods, apparatuses, and / or computer program products that facilitate quantum tuning via permanent magnet flux elements are described.

[0009] According to one or more embodiments, a system is provided. The system may include a qubit device. In various aspects, the system may further include a permanent magnet adjacent to the qubit device. In various aspects, the permanent magnet may emit a first magnetic flux onto the qubit device. In various cases, the operating frequency of the qubit device may be based on the first magnetic flux. In various aspects, the system may also include an electromagnet adjacent to the permanent magnet. In various aspects, the electromagnet may emit a second magnetic flux onto the permanent magnet. In various aspects, the second magnetic flux may tune the first magnetic flux. In various embodiments, the permanent magnet may be a nanoparticle magnet. In various embodiments, the nanoparticle magnet may include manganese nanoparticles embedded in a silicon matrix. In various embodiments, the system may further include an electrode that applies a current to the nanoparticle magnet in the presence of the second magnetic flux. In various aspects, the strength of the first magnetic flux may be varied based on the nanoparticle magnet's exposure to the current and exposure to the second magnetic flux. In various embodiments, based on the first magnetic flux reaching a predetermined strength, the electrode may remove the current and the electromagnet may remove the second magnetic flux.

[0010] According to one or more embodiments, the above system can be implemented as a method.

[0011] According to one or more embodiments, an apparatus is provided. In various aspects, the apparatus may include a nanoparticle magnet adjacent to a Josephson junction device. In various aspects, the nanoparticle magnet may emit a tunable permanent magnetic field onto the Josephson junction device. In various instances, the operating frequency of the Josephson junction device may be based on the tunable permanent magnetic field. In various aspects, the apparatus may further include a flux coil adjacent to the nanoparticle magnet. In various aspects, the flux coil may tune the tunable permanent magnetic field. In various embodiments, the nanoparticle magnet may include manganese nanoparticles embedded in a silicon matrix. In various embodiments, the apparatus may further include electrodes. When the nanoparticle magnet is exposed to the magnetic field of the flux coil, the electrodes may apply a current to the nanoparticle magnet. In various aspects, the value of the tunable permanent magnetic field may be varied based on the nanoparticle magnet being exposed to the current and the magnetic field of the flux coil. In various embodiments, based on the tunable permanent magnetic field reaching a threshold, the electrodes may remove the current and the flux coil may remove the magnetic field.

[0012] As described above, conventional systems / techniques for facilitating flux tuning of qubit devices involve emitting magnetic flux (e.g., a magnetic field) onto the qubit device via an electromagnet. The electromagnet emits magnetic flux when current is applied, and does not emit magnetic flux when no current is applied. Furthermore, when the qubit device is exposed to the magnetic flux of the electromagnet, its operating frequency shifts from an initial value to a modulated value, and when the qubit device is no longer exposed to the magnetic flux of the electromagnet, its operating frequency shifts back from the modulated value to the initial value. Thus, conventional systems / techniques require a continuous and / or actively flowing current to facilitate flux tuning, as the current must flow over the entire time period during which the operating frequency of the qubit device is desired to be maintained at the modulated value.

[0013] As mentioned above, continuous and / or actively flowing current presents technical challenges in the field of flux tuning. Specifically, actively flowing current generates overheating, which can negatively impact the performance of quantum circuits (e.g., quantum circuits are typically implemented at near-absolute-zero temperatures, and overheating can undesirably increase such temperatures). Furthermore, actively flowing current may lack sufficient stability for optimal quantum performance (e.g., the amplitude and / or phase of an actively flowing current over a period of time may experience perturbations, causing corresponding perturbations in the magnetic flux emitted by the electromagnet, which in turn cause corresponding perturbations in the operating frequency of the qubit device).

[0014] Various embodiments of the present invention can address one or more of these problems in the prior art. In various aspects, embodiments of the present invention can provide quantum tuning via permanent magnet flux elements. In different instances, quantum tuning via permanent magnet flux elements can facilitate flux tuning of qubit devices without the need for continuous and / or actively flowing current (e.g., the operating frequency of the qubit device can be maintained at a modulated value for a period of time without the need for current to flow throughout that period).

[0015] In various applications, embodiments of the present invention can facilitate flux tuning of qubit devices without the need for a continuous and / or actively flowing current by incorporating an electromagnet to realize a tunable permanent magnet. Specifically, in various aspects, the tunable permanent magnet can emit a first magnetic flux onto the qubit device. In various applications, the operating frequency of the qubit device can be based on this first magnetic flux. Because the tunable permanent magnet is a permanent magnet, it is not necessary to apply an induced current to the tunable permanent magnet to generate the first magnetic flux (e.g., the first magnetic flux can be generated by the tunable permanent magnet without consuming current). When exposed to the first magnetic flux, the operating frequency of the qubit device can shift from an initial value to a modulated value (e.g., where the modulated value can be based on the amplitude and / or orientation of the first magnetic flux). In this way, the operating frequency of the qubit device can be set to the modulation value for any suitable period of time without requiring a continuous and / or actively flowing current during that suitable period (e.g., the operating frequency of the qubit device can remain at the modulation value as long as the qubit device is exposed to the first magnetic flux, and the tunable permanent magnet can maintain the first magnetic flux without requiring an applied current). Thus, the operating frequency of the qubit device can be shifted / converted from the initial value to the modulation value without the overheating or instability that plagues conventional systems / technologies.

[0016] In various embodiments, it is desirable to tune the operating frequency of the qubit device in real time and in situ. In various instances, embodiments of the invention can facilitate this real-time tuning by utilizing an electromagnet in conjunction with a tunable permanent magnet. Specifically, in various embodiments, the first magnetic flux of the tunable permanent magnet can be controlled, altered, modulated, and / or tuned by applying a current to the tunable permanent magnet when a second magnetic flux is present. In various aspects, the electromagnet can emit the second magnetic flux onto the tunable permanent magnet, and electrodes can apply a current to the tunable permanent magnet. In various cases, when the tunable permanent magnet is exposed to both the current and the second magnetic flux, the value and / or intensity of the first magnetic flux can be changed (e.g., the changed amplitude and / or sign can be controlled based on the magnitude and / or phase of the current and the magnitude and / or orientation of the second magnetic flux). In this way, the intensity (e.g., amplitude and / or orientation) of the first magnetic flux of the tunable permanent magnet can be controlled / adjusted. Furthermore, in various instances, the first magnetic flux of the tunable permanent magnet retains the intensity / value of this change even after the electrodes and electromagnets are de-energized (e.g., even after the currents associated with the electrodes and the electromagnets have stopped flowing).

[0017] In various embodiments, the tunable permanent magnet may include manganese nanoparticles embedded in a silicon matrix. For example, the manganese nanoparticles embedded in the silicon matrix can be magnetized by applying an electric current to them when they are exposed to an external magnetic field. The manganese nanoparticles embedded in the silicon matrix can maintain this magnetization even after the current and the external magnetic field are removed.

[0018] In this way, real-time and / or in-situ flux tuning of qubit devices can be facilitated without the need for continuous and / or actively flowing current. Specifically, when it is desired to change the strength / value of the magnetic flux of the tunable permanent magnet, various embodiments of the invention can apply a current (e.g., associated with an electromagnet and electrodes) for a short duration, which can correspondingly change the operating frequency of the qubit device. Different embodiments of the invention can then maintain (e.g., via the tunable permanent magnet) the newly changed operating frequency of the qubit device without applying current. For example, embodiments of the invention can change the magnetic flux of the tunable permanent magnet by applying current from the electrodes to the tunable permanent magnet while exposing the tunable permanent magnet to external magnetic flux from the electromagnet. Once the magnetic flux of the tunable permanent magnet is set as needed, the electrodes and electromagnet can be disconnected (e.g., so that the current stops flowing), and the tunable permanent magnet can maintain its newly set magnetic flux. Under different conditions, this newly set magnetic flux can cause the operating frequency of the qubit device to shift to a new value accordingly, and this new value can be maintained by the tunable permanent magnet without consuming current.

[0019] Therefore, different embodiments of the present invention can facilitate flux tuning by consuming current only when the operating frequency of the qubit device is changed / converted from one value (e.g., via electrodes and electromagnets) to another. Once the operating frequency of the qubit device has been changed / converted as desired, different embodiments of the present invention can maintain the changed / converted operating frequency (e.g., via the tunable permanent magnet) without consuming current. In stark contrast, conventional systems / techniques for facilitating flux tuning exclusively rely on electromagnets that require continuous and / or active current flow throughout the entire period for which the operating frequency of the qubit device is to be modulated (e.g., conventional systems / techniques require continuous current flow not only to change / convert one operating frequency of the qubit device from one value to another, but also to maintain the new operating frequency after the change / conversion). Because the various embodiments of the present invention can provide flux tuning without active current flow, such embodiments can experience less overheating and less instability compared to conventional systems / techniques, which can lead to improved performance of the quantum circuits compared to conventional systems / techniques. Therefore, the various embodiments of the present invention constitute specific technical improvements that are superior to the prior art in the field of flux tuning. Attached Figure Description

[0020] Figure 1 A block diagram of an exemplary non-limiting system facilitating quantum tuning via a permanent magnet flux element according to one or more embodiments described herein is shown.

[0021] Figure 2 A flowchart is shown of an exemplary non-limiting method for facilitating quantum tuning via a permanent magnet flux element according to one or more embodiments described herein.

[0022] Figure 3-7 A block diagram is shown of an exemplary non-limiting intermediate structure comprising manganese nanoparticles embedded in a silicon matrix that can be used to facilitate quantum tuning via a permanent magnet flux element, according to one or more embodiments described herein.

[0023] Figure 8-14 A block diagram is shown of an exemplary non-limiting intermediate structure comprising a qubit device that can be used to facilitate quantum tuning via a permanent magnet flux element, according to one or more embodiments described herein.

[0024] Figure 15-22 A block diagram is shown of an exemplary non-limiting intermediate structure comprising a flux coil that can be used to facilitate quantum tuning via a permanent magnet flux element, according to one or more embodiments described herein.

[0025] Figure 23 A block diagram of an exemplary non-limiting device facilitating quantum tuning via a permanent magnet flux element according to one or more embodiments described herein is shown.

[0026] Figure 24 A flowchart is shown of an exemplary non-limiting method for facilitating quantum tuning via a permanent magnet flux element according to one or more embodiments described herein.

[0027] Figure 25 A block diagram is shown that illustrates an example non-limiting operating environment that may facilitate one or more embodiments described herein. Detailed Implementation

[0028] The following detailed description is illustrative only and is not intended to limit the embodiments and / or their application or use. Furthermore, there is no intention to be bound by any express or implied information presented in the preceding background or overview or detailed description sections.

[0029] One or more embodiments will now be described with reference to the accompanying drawings, wherein like reference numerals are used throughout to refer to like elements. In the following description, numerous specific details are set forth for purposes of explanation in order to provide a more thorough understanding of one or more embodiments. However, it will be apparent that one or more embodiments may be practiced without these specific details in various circumstances.

[0030] Flux tuning of a qubit device (e.g., a SQUID loop) involves exposing the qubit device to a magnetic flux, wherein the operating frequency of the qubit device is a function of the amplitude and / or phase of the magnetic flux. Therefore, the operating frequency of the qubit device can be controlled and / or modulated by controlling and / or modulating the magnetic flux exposed to it.

[0031] As explained above, conventional systems / techniques for facilitating flux tuning involve transmitting magnetic flux to the qubit device via an electromagnet. The electromagnet is typically a flux coil, which generates magnetic flux when exposed to current and stops generating flux when not exposed to current. Thus, conventional systems / techniques can only facilitate flux tuning by maintaining an effective flow of current for the entire time period during which the operating frequency of the qubit device is desired to be modulated (e.g., conventional systems / techniques require consuming current to convert the operating frequency of the qubit device to a modulated value and maintain that modulated value). As explained above, maintaining an active flow of current in this way can cause overheating of the quantum circuit (e.g., according to Ohm's law, current traveling through a conductor with non-zero resistance dissipates some energy as heat). Furthermore, maintaining an active current flow in this manner can also cause instability in the operating frequency of the qubit device (e.g., even when a voltage / current regulator is used, the amplitude and / or phase of the current will experience perturbations, which in turn cause corresponding perturbations in the magnetic field generated by the electromagnet, which in turn cause corresponding perturbations in the operating frequency of the qubit device). These are undesirable technical problems affecting conventional systems / technologies used to facilitate flux tuning.

[0032] Various embodiments of the present invention can address one or more of the problems in the prior art. In various aspects, embodiments of the present invention can utilize both tunable permanent magnets and electromagnets to facilitate flux tuning of qubit devices. Specifically, in various instances, the tunable permanent magnet can emit a first magnetic flux onto the qubit device, wherein the operating frequency of the qubit device is based on the first magnetic flux (e.g., the qubit device can be a SQUID loop). In various aspects, when the qubit device is not exposed to the first magnetic flux, the operating frequency of the qubit device can be at an initial value. When the qubit device is exposed to the first magnetic flux, the operating frequency of the qubit device can shift from the initial value to a modulated value. Because permanent magnets maintain their magnetic properties in the absence of an induced field or current, the tunable permanent magnet can maintain the first magnetic flux and thus maintain the operating frequency of the qubit device at the modulated value without the need for continuous current consumption. Because the tunable permanent magnet does not rely on a continuous and / or active current flow to generate and maintain the first magnetic flux, the tunable permanent magnet can maintain the operating frequency of the qubit device at the modulation value without experiencing the overheating or instability that plagues conventional systems / technologies.

[0033] In different cases, the modulation value may depend on the amplitude and / or orientation of the first magnetic flux (e.g., one combination of the amplitude and orientation of the first magnetic flux may result in a modulation value lower than the initial value, while another combination of the amplitude and orientation of the first magnetic flux may result in a modulation value higher than the initial value). In different cases, the modulation value may be a function of the first magnetic flux, such that any appropriate modulation value of the operating frequency of the qubit device can be obtained by correspondingly and / or appropriately modulating the first magnetic flux (e.g., by appropriately changing / tuning the intensity of the first magnetic flux).

[0034] To facilitate this modulation / tuning of the first magnetic flux, various embodiments of the invention may employ an electromagnet. Specifically, in various aspects, the strength and / or value of the first magnetic flux of the tunable permanent magnet can be varied based on the tunable permanent magnet being exposed to both an external magnetic field and a current. Thus, in various embodiments, an electrode can apply current to the tunable permanent magnet, and an electromagnet can emit a second magnetic flux onto the tunable permanent magnet. In various instances, when the tunable permanent magnet is exposed to both the current from the electrode and the second magnetic flux from the electromagnet, the strength / value (e.g., amplitude and / or orientation) of the first magnetic flux can be varied, which can correspondingly cause a change in the operating frequency of the qubit device. In various embodiments, the first magnetic flux of the tunable permanent magnet can maintain this varied strength / value even after the electrode and the electromagnet are de-energized (e.g., even after the current is removed from the electrode and the second magnetic flux is removed from the electromagnet). As explained above, the varied strength / value of the first magnetic flux of the tunable permanent magnet can cause a corresponding change in the operating frequency of the qubit device.

[0035] In various embodiments, the tunable permanent magnet may comprise manganese nanoparticles (e.g., approximately 40% manganese) embedded in a silicon matrix. In various instances, the manganese nanoparticles embedded in the silicon matrix can be magnetized when exposed to an electric current in the presence of an external magnetic field. In various aspects, the magnetism of the manganese nanoparticles (e.g., the amplitude and / or orientation of the magnetic field / flux generated by the magnetized manganese nanoparticles) may depend on the amplitude and / or phase of the current applied to the manganese nanoparticles and on the amplitude and / or orientation of the external magnetic field to which the manganese nanoparticles are exposed. In various aspects, the manganese nanoparticles embedded in the silicon matrix can be in situ tuned to a specific magnetic field strength by passing an electric current through the matrix in the presence of an external magnetic field.

[0036] In general, a tunable permanent magnet can emit a first magnetic flux to a qubit device (e.g., where the operating frequency of the qubit device is a function of the first magnetic flux), and electromagnets and electrodes can be used to tune the first magnetic flux, thereby tuning the operating frequency of the qubit device. Therefore, different embodiments of the invention can facilitate flux tuning of the qubit device without requiring a continuous and / or actively flowing current. Instead, various embodiments of the invention can consume current (e.g., through electrodes and electromagnets) for short periods to convert / tune / modulate the first magnetic flux of the tunable permanent magnet, which correspondingly converts / tunes / modulates the operating frequency of the qubit device. Once the first magnetic flux (and therefore the operating frequency of the qubit device) has been converted / tuned / modulated as desired, the electrodes and electromagnets can be de-energized, thereby stopping the current consumption. Because a tunable permanent magnet can maintain its newly switched / tuned / modulated flux even without current from the electrodes and without a second magnetic flux from the electromagnet, it can maintain the operating frequency of the qubit device at its newly switched / tuned / modulated value without continuous and / or effective current flow. Eliminating continuous and / or active current flow in this way can reduce overheating of the quantum circuit and improve the stability of the quantum operating frequency in various situations. In contrast, conventional systems / techniques only implement electromagnets to facilitate flux tuning, which requires a constantly flowing current.

[0037] In other words, conventional systems / techniques require current to switch / tune the operating frequency of the qubit device and maintain that switching / tuning frequency, while different embodiments of the present invention only require current to switch / tune the operating frequency of the qubit device and can maintain the new switching / tuning frequency without current flow. Therefore, the various embodiments of the present invention constitute specific technical improvements superior to conventional flux tuning systems / techniques.

[0038] As a non-limiting illustrative example, suppose we wish to operate a qubit device at z Hz for t time units (e.g., for any suitable positive numbers z and t). Further, suppose the qubit device has a base operating frequency of x Hz (e.g., for any suitable positive number x, where x ≠ z). In various aspects, a tunable permanent magnet can emit a first magnetic flux onto the qubit device. Suppose the first magnetic flux has an initial intensity B (for any suitable value B). In different instances, suppose that when the qubit device is exposed to a magnetic flux of intensity B, the operating frequency of the qubit device shifts from x Hz to y Hz (e.g., for any suitable positive number y, where y ≠ x ≠ z), and when the qubit device is exposed to a magnetic flux of intensity B', the operating frequency of the qubit device shifts to z Hz. Thus, the goal could be to tune the first magnetic flux of the tunable permanent magnet from intensity B to intensity B'. In various aspects, this can be facilitated by electrodes and electromagnets. In various cases, the first magnetic flux (e.g., the intensity of the first magnetic flux) can be a function of the current (e.g., the amplitude and / or phase of the current) and the second magnetic flux (e.g., the intensity of the second magnetic flux). Therefore, in various aspects, the current generated by the electrodes and the second magnetic flux generated by the electromagnet can be appropriately controlled / selected such that they shift the first magnetic flux of the tunable permanent magnet to intensity B'. During this process, the electrodes and electromagnet can consume / dissipate current. After the intensity of the first magnetic flux has shifted to B', the electrodes and electromagnet can be de-energized (e.g., the consumption / dissipation of current can be stopped). In various embodiments, the tunable permanent magnet (e.g., manganese nanoparticles embedded in a silicon matrix) can maintain intensity B' even after the electrodes and electromagnet have been de-energized. Since the qubit device is now exposed to the first magnetic flux with intensity B', the operating frequency of the qubit device can be shifted to z Hz. As long as the first magnetic flux of the tunable permanent magnet remains at intensity B', the operating frequency of the qubit device can be maintained at z Hz. Since the initial magnetic flux of the tunable permanent magnet can be maintained at its strength B' without consuming current, the operating frequency of the qubit device can be maintained at z Hz without consuming current. Once t units of time have elapsed, the above process can be repeated for any suitable value to which the operating frequency of the qubit device is desired to be shifted.

[0039] In contrast, conventional systems / techniques simply transmit a magnetic flux of intensity B' to the qubit device via an electromagnet (e.g., by applying a suitable current to the electromagnet). This shifts the operating frequency of the qubit device to z Hz. However, to maintain the operating frequency of the qubit device at z Hz, the electromagnet must remain energized for the entire duration t. That is, the electromagnet can only maintain the operating frequency of the qubit device at z Hz by continuously consuming current (e.g., actively flowing current) for the entire duration of t time units. As mentioned above, such continuous current flow can cause undesirable heating of the quantum circuit and / or undesirable instability of the qubit device's operating frequency. Since different embodiments of the present invention can maintain the operating frequency of the qubit device at z Hz without such continuous current flow, these embodiments avoid the overheating and / or instability that plague conventional systems / techniques. Thus, the various embodiments of the present invention constitute specific technical improvements in the field of flux tuning.

[0040] In various aspects, embodiments of the invention can be implemented as follows: The quantum circuit can be cooled (e.g., by any suitable cooling mechanism) to an operating temperature (e.g., 20 mK). The current operating frequency of the qubit device can be measured (e.g., by any suitable quantum frequency measurement technique), and a target operating frequency of the qubit device can be selected. Various embodiments of the invention can be implemented to tune the magnetic flux of a tunable permanent magnet (e.g., manganese nanoparticles embedded in a silicon matrix) exposed to the qubit device. As described herein, tuning the magnetic flux of the tunable permanent magnet can be facilitated by passing a current through the tunable permanent magnet (e.g., a silicon-manganese nanoparticle film) while the tunable permanent magnet is exposed to an external magnetic field. Once the tunable permanent magnet reaches a desired, predetermined, and / or threshold magnetic flux intensity, the current and the external magnetic field can be removed. The desired, predetermined, and / or threshold magnetic flux intensity of the tunable permanent magnet can cause the operating frequency of the qubit device to take a corresponding desired, predetermined, and / or threshold value. In various aspects, any suitable number of other qubit devices can be tuned in this manner. In various situations, quantum circuits can then be operated as needed.

[0041] In various aspects, tunable permanent magnets comprising manganese nanoparticles embedded in a silicon matrix can be made / manufactured as follows. In various instances, trenches of appropriate size can be patterned into a silicon wafer. A suitable silicon-manganese film can be deposited into the trenches, and chemical mechanical planarization can be performed. The silicon-manganese film can be annealed in hydrogen (e.g., H2) to form manganese nanoparticles. In some cases, a superconducting film (e.g., niobium) can be deposited onto a silicon wafer and patterned / etched into wires / electrodes coupled to the silicon-manganese film. In other cases, qubit devices (e.g., aluminum / alumina / aluminum Josephson junctions) can be patterned / etched / deposited onto a silicon wafer adjacent to the silicon-manganese film. In various other cases, qubit devices can be patterned / etched / deposited onto a separate substrate.

[0042] In various aspects, the electromagnet / flux coil can be made / manufactured as follows. In some cases, a superconducting film (e.g., niobium) can be deposited onto a substrate and patterned and etched into a suitable coil shape. In other cases, a dielectric (e.g., silicon or silicon oxide) can be deposited. Suitable vias can then be patterned and etched into the dielectric to provide contact points to the center / inner lead and the edge / outer lead of the coil. In various aspects, a superconductor (e.g., niobium) can be deposited and then patterned / etched to form multiple wires, one contacting the center / inner lead and another contacting the edge / outer lead.

[0043] In various aspects, tunable permanent magnets can be patterned in a substrate and coupled onto a qubit chip via alignment. The magnetic field strength of each tunable permanent magnet can be tuned during electroplating deposition (e.g., using an external magnetic field) or by treating the tunable permanent magnets with a localized external magnetic field (e.g., from an electromagnet) after device fabrication. In various aspects, the tunable permanent magnets can include a silicon-manganese film (e.g., a silicon matrix having manganese nanoparticles). Magnetization of the manganese nanoparticles can be facilitated by passing an current through the silicon-manganese film in the presence of an external magnetic field. After magnetization, the silicon-manganese film can maintain a stable magnetic field strength in the absence of additional current or external magnetic field.

[0044] In various aspects, possible non-limiting applications of embodiments of the present invention may include: tuning the operating frequency of a qubit device; providing a structure for quasi-particle repulsion from the device region; providing an external field to enable the functionality of 3-5 bulk Fermilon devices; providing an external field to enable the functionality of NIST magnetic Josephson junction neuron morphology devices; using magnetic traps to make superconductors normal metals in specific regions and trapping excimers to improve coherence; and / or in various aspects, measuring the device frequency at a cryogenic temperature in the absence of a magnetic field, bringing the device to ambient temperature, adjusting the magnetic field strength of a tunable permanent magnet as needed, and then bringing the device back to a cryogenic temperature for operation.

[0045] Various embodiments of the present invention include novel systems / techniques for facilitating quantum tuning via multiple permanent magnet flux elements, which are not abstract, not natural phenomena, not natural laws, and cannot be performed by humans as a set of mental actions. Instead, various embodiments of the present invention include systems / techniques for facilitating flux tuning of qubit devices using tunable permanent magnets that do not require a continuous and / or actively flowing current. Such a continuous and / or actively flowing current can lead to technical problems in flux tuning, such as overheating of the quantum circuit and its environment and / or instability of the operating frequency of the qubit device. Since various embodiments of the present invention do not require a continuous and / or actively flowing current, they eliminate and / or reduce the problems of overheating and instability that plague conventional systems / techniques, thereby constituting a concrete technical improvement over the prior art. These technical improvements can be achieved by emitting a first magnetic flux onto a qubit device via a tunable permanent magnet, wherein the operating frequency of the qubit device is a function of the first magnetic flux. The tunable permanent magnet can emit / generate the first magnetic flux without consuming / spending current. Thus, the first magnetic flux can shift the operating frequency of the qubit device to a modulation value and maintain that operating frequency at the modulation value without consuming / drawing current. In various embodiments, the first magnetic flux of the tunable permanent magnet can be tuned using electrodes and electromagnets. Specifically, the electrodes can apply current to the tunable permanent magnet, and the electromagnet can emit a second magnetic flux to the tunable permanent magnet. In various embodiments, the first magnetic flux of the tunable permanent magnet (e.g., manganese nanoparticles embedded in a silicon matrix) can be a function of the current associated with the electrodes and the second magnetic flux associated with the electromagnet. In this way, the electrodes and electromagnets can be controlled / utilized to shift / change the first magnetic flux of the tunable permanent magnet as desired, which can correspondingly shift / change the operating frequency of the qubit device. Based on the shift / change of the first magnetic flux as needed, the electrodes and electromagnets can be de-energized (e.g., current consumption / drawing can be stopped), and the tunable permanent magnet can retain its newly shifted / changed first magnetic flux. Because a tunable permanent magnet can maintain its newly shifted / changed first magnetic flux without any continuous and / or active current flow, it can also maintain the newly shifted / changed operating frequency of a qubit device without any continuous and / or active current flow. In this way, embodiments of the present invention can facilitate flux tuning without continuous and / or active current flow, which can reduce and / or eliminate problems of overheating and / or instability. Therefore, embodiments of the present invention provide novel systems / techniques for facilitating flux tuning, which improve the operation of quantum computing systems and thus constitute specific technical improvements over the prior art.

[0046] In all respects, it should be understood that the accompanying drawings of this disclosure are exemplary and not restrictive, and are not necessarily drawn to scale.

[0047] Figure 1 A block diagram of an exemplary non-limiting system 100 that can facilitate quantum tuning via a permanent magnet flux element according to one or more embodiments described herein is shown. As shown, in various aspects, system 100 may include a permanent magnet 104, an electromagnet 112, and a qubit device 102. In the various instances described herein, the permanent magnet 104 and the electromagnet 112 may be implemented to facilitate flux tuning of the qubit device 102 without a continuous and / or actively flowing current (e.g., no current is consumed / drawn during the time period during which the operating frequency of the qubit device 102 is desired to be tuned / modulated).

[0048] In various embodiments, the qubit device 102 can be any suitable qubit device on which flux tuning can be performed. For example, the qubit device 102 can be a SQUID loop (e.g., a superconducting quantum interference device loop) comprising two (or more) Josephson junctions coupled in parallel. In this case, the overall operating frequency of the SQUID loop can be a function of the external magnetic flux passing through the loop (e.g., between these parallel Josephson junctions). In various embodiments, the qubit device 102 can be any suitable quantum device used as a qubit and having an operating frequency that is a function of and / or based on the external magnetic flux to which the qubit device 102 is exposed. In some embodiments, multiple qubit devices 102 can be implemented (e.g., in some cases, a permanent magnet 104 can correspond to several qubit devices 102).

[0049] As illustrated, in various embodiments, permanent magnet 104 can emit a first magnetic flux 106 (e.g., a first magnetic field) onto qubit device 102. Because the operating frequency of qubit device 102 can be a function of the external magnetic flux to which it is exposed, the operating frequency of qubit device 102 can be based on the first magnetic flux 106 (e.g., the amplitude and / or orientation of the first magnetic flux 106 can be controlled, adjusted, shifted, altered, converted, and / or modulated). Therefore, in various aspects, controlling / modulating the first magnetic flux 106 of permanent magnet 104 can correspondingly control / modulate the operating frequency of qubit device 102. In various aspects, permanent magnet 104 can be a tunable permanent magnet. In various instances, permanent magnet 104 can be a tunable nanoparticle magnet (e.g., including manganese nanoparticles embedded in a silicon matrix).

[0050] In various embodiments, the permanent magnet 104 can emit, generate, and / or maintain a first magnetic flux 106 without consuming, depleting, or otherwise depending on current. This is because a permanent magnet can maintain its magnetic properties / characteristics even in the absence of induced current or magnetic field, unlike an electromagnet. Thus, in various instances, the first magnetic flux 106 of the permanent magnet 104 can shift the operating frequency of the qubit device 102 from an initial state to a modulated state, and the first magnetic flux 106 of the permanent magnet 104 can maintain / sustain the operating frequency of the qubit device 102 in this modulated state without consuming / depleting current (e.g., no current is applied to the permanent magnet 104).

[0051] In various embodiments, the permanent magnet 104 may be a tunable permanent magnet, such as a tunable nanoparticle magnet. In various embodiments, the permanent magnet 104 may include manganese nanoparticles embedded in a silicon matrix. In various aspects, the manganese nanoparticles embedded in the silicon matrix can be in situ tuned to a specific magnetic field strength by passing an current through the matrix in the presence of an external magnetic field. In other words, in various instances, the manganese nanoparticles can be controllably magnetized by applying a current to the silicon matrix while the manganese nanoparticles are exposed to an external magnetic field. The resulting magnetic properties of the manganese nanoparticles can be a function of the external magnetic field and the current (e.g., such that the characteristics of controlling the current applied to the manganese nanoparticles and the characteristics of controlling the external magnetic field exposed to the manganese nanoparticles can correspondingly control the resulting magnetic properties of the manganese nanoparticles). In various aspects, the manganese nanoparticles embedded in the silicon matrix can retain their magnetism even after the manganese nanoparticles are no longer exposed to the current and / or the external magnetic field. Therefore, in various embodiments, the first magnetic flux 106 of the permanent magnet 104 can be tuned, modulated, and / or controlled by the electromagnet 112 and the electrode 108 in various instances. In various aspects, the permanent magnet 104 may include 40% and / or about 40% manganese. In various aspects, the permanent magnet 104 may include between 35% and 50% manganese, including the endpoints. In various embodiments, the permanent magnet 104 may include any suitable proportion / percentage of manganese nanoparticles. In various embodiments, a film containing manganese nanoparticles embedded in the silicon matrix may be constructed on a module / substrate adjacent to the qubit device 102 or may be constructed on the same chip / substrate as the qubit device 102.

[0052] In various embodiments, as shown, the permanent magnet 104 may be coupled to the electrode 108. As explained herein, the electrode 108 may be used in conjunction with the electromagnet 112 to regulate, modulate, and / or control a first magnetic flux 106 of the permanent magnet 104. As shown, in some cases, the electrode 108 may have a positive lead (e.g., in…). Figure 1 (Used as "+") and negative leads (e.g., in...) Figure 1(Used as "-" in some instances). In different instances, electrode 108 may apply current 110 to permanent magnet 104 (e.g., current 110 may flow from the positive lead to the negative lead through electrode 108). As explained above, once magnetized, permanent magnet 104 can emit a first magnetic flux 106 without consuming / drawing current. Therefore, electrode 108 does not need to apply current 110 to permanent magnet 104 to maintain and / or continuously emit the first magnetic flux 106 (e.g., after magnetization, permanent magnet 104 can output the first magnetic flux 106 even when electrode 108 is de-energized so that no current 110 is applied to permanent magnet 104).

[0053] In various embodiments, as shown, an electromagnet 112 (e.g., a flux coil) can emit a second magnetic flux 114 (e.g., a second magnetic field) onto a permanent magnet 104. As described herein, the permanent magnet 104 can emit a first magnetic flux 106. In various embodiments, the first magnetic flux 106 of the permanent magnet 104 can be tuned, modulated, and / or controlled by passing a current (e.g., current 110) through the permanent magnet 104 when the permanent magnet 104 is in the presence of an external magnetic field (e.g., the second magnetic flux 114). Therefore, in various cases, controlling / modulating the characteristics / features of the current 110 and the second magnetic flux 114 can correspondingly control / modulate the characteristics / features of the first magnetic flux 106. In various aspects, the electromagnet 112 can be supplemented by another magnet (e.g., another electromagnet or another permanent magnet) to ensure that the second magnetic flux 114 is sufficiently strong to alter / control / tune the permanent magnet 104.

[0054] Because an electromagnet can only emit / generate a magnetic field in the presence of an induced current or a magnetic field, in various instances, the electromagnet 112 can be coupled to the electrode 116, as shown. In various cases, the electrode 116 can have a positive lead (e.g., by...). Figure 1 The "+" in the text indicates a positive lead (e.g., a negative lead). Figure 1 (The "-" in the text indicates this). In various instances, electrode 116 may apply current 118 to electromagnet 112 (e.g., current 118 may flow from the positive lead to the negative lead through electrode 116). In various aspects, current 118 may flow to cause electromagnet 112 to emit a second magnetic flux 114 (e.g., electromagnet 112 may consume / spend electricity to generate the second magnetic flux 114). In various cases, the characteristics / features of controlling / modulating current 118 may correspondingly control / modulate the characteristics / features of the second magnetic flux 114.

[0055] In general, the permanent magnet 104 can emit a first magnetic flux 106 onto the qubit device 102. Since the operating frequency of the qubit device 102 can be a function of the characteristics / features of the first magnetic flux 106 (e.g., amplitude and / or orientation), the first magnetic flux 106 can cause the operating frequency of the qubit device 102 to shift to a modulation value (e.g., controlling the characteristics of the first magnetic flux 106 can correspondingly control the operating frequency of the qubit device 102). In various aspects, once magnetized, the permanent magnet 104 can emit the first magnetic flux 106 without consuming / spending power (e.g., electrode 108 can be de-energized so that no current 110 flows; and electrode 116 can be de-energized so that no current 118 flows, which can cause the electromagnet 112 not to emit a second magnetic flux 114). Thus, the first magnetic flux 106 of the permanent magnet 104 can maintain / hold the operating frequency of the qubit device 102 at the modulation value for a given time period without requiring active current flow or sustaining the given time period. In various cases, it may be desirable to shift the operating frequency of the qubit device 102 to different modulation values. In various aspects, electrodes 108 and electromagnets 112 can be used to facilitate this shift. As explained above, in various embodiments, the first magnetic flux 106 of the permanent magnet 104 can be controllably tuned, modulated, and / or altered by applying a current (e.g., current 110) to the permanent magnet 104 while it is exposed to an external magnetic field (e.g., a second magnetic flux 114). Thus, electrode 108 can apply current 110 to the permanent magnet 104, and electromagnet 112 can emit the second magnetic flux 114 onto the permanent magnet 104 (e.g., this can be facilitated by electrode 116 applying current 118 to electromagnet 112). As explained herein, the first magnetic flux 106 can be a function of the current 110 and the second magnetic flux 114 (e.g., the amplitude and / or orientation of the first magnetic flux 106 can be controlled by controlling the amplitude and / or phase of the current 110 and the amplitude and / or orientation of the second magnetic flux 114). Once the first magnetic flux 106 is properly tuned / changed, the electrode 108 can be de-energized and the electromagnet 112 can be de-energized, and the first magnetic flux 106 can retain its newly tuned / changed characteristics. In various cases, the newly tuned / changed characteristics of the first magnetic flux 106 can cause the operating frequency of the qubit device 102 to shift to a different modulation value. In various cases, the first magnetic flux 106 of the permanent magnet 104 can maintain the operating frequency of the qubit device 102 at this different modulation value without consuming power (e.g., the electrode 108 and the electromagnet 112 can be de-energized).

[0056] In this manner, system 100 can consume current (e.g., via electrodes 108 and electromagnet 112) to controllably transition the operating frequency of qubit device 102 from one value to another, and system 100 can maintain the operating frequency of qubit device 102 (e.g., via permanent magnet 104) at this new value without consuming current (e.g., no actively flowing current). In stark contrast, conventional systems / techniques for facilitating flux tuning require current consumption to transition the operating frequency of qubit device 102 from one value to another and to maintain the operating frequency of qubit device 102 at that new value (e.g., actively flowing current is required to maintain the operating frequency at that new value). Because different embodiments of the invention can facilitate flux tuning without continuously flowing current for the entire duration for which it is desired to maintain the operating frequency of qubit device 102 at a new value, these embodiments do not experience the overheating or instability that adversely affects conventional systems / techniques.

[0057] To help illustrate the above principle, consider the following non-limiting example. Assume that the first magnetic flux 106 of the permanent magnet 104 has an initial strength of B1 (for any suitable positive number B1). Further, assume that when the qubit device 102 is exposed to a magnetic field of strength B1, the operating frequency of the qubit device 102 shifts to f1 (for any suitable positive number f1). Thus, the first magnetic flux 106 can cause the operating frequency of the qubit device 102 to take the value f1. As explained, the permanent magnet 104 can emit the first magnetic flux 106 without consuming / drawing current (e.g., the electrodes 108 and electromagnet 112 do not need to be energized for the permanent magnet 104 to continuously output the first magnetic flux 106). Therefore, the permanent magnet 104 can maintain the operating frequency of the qubit device 102 at f1 for any suitable time period without consuming / drawing current. Now, suppose we wish to shift the operating frequency of qubit device 102 to f2 (for any suitable positive number f2), and suppose that when qubit device 102 is exposed to a magnetic field of strength B2 (for any suitable positive number B2), the operating frequency of qubit device 102 shifts to f2. To facilitate this shift of the operating frequency, electrode 108 and electromagnet 112 can be implemented to shift the intensity of a first magnetic flux 106 to B2. Specifically, electrode 108 can be energized to apply current 110 to permanent magnet 104, and electromagnet 112 can be energized (e.g., via electrode 116 and current 118) to emit a second magnetic flux 114 onto permanent magnet 104. In various instances, the characteristics / features of current 110 and the second magnetic flux 114 can be suitably selected and / or controlled such that they cause the first magnetic flux 106 to have an intensity B2. Once the intensity of the first magnetic flux 106 shifts to B2, the electrode 108 and the electromagnet 112 can be de-energized (e.g., so that the permanent magnet 104 is no longer exposed to the current 110 or the second magnetic flux 114). In various aspects, the first magnetic flux 106 can maintain an intensity of B2 even in the absence of the current 110 and the second magnetic flux 114 (e.g., the permanent magnet 104 may include manganese nanoparticles embedded in a silicon matrix). In various instances, the first magnetic flux 106 with an intensity of B2 can cause the operating frequency of the qubit device to shift to f2. Since the first magnetic flux 106 can maintain an intensity of B2 without consuming / drawing current, the permanent magnet 104 can maintain the operating frequency of the qubit device 102 at f2 for any appropriate period of time without continuous and / or active current flow. On the other hand, conventional systems / techniques would simply use an electromagnet to emit a magnetic flux of intensity B2 onto the qubit device 102. Although this shifts the operating frequency of the qubit device 102 to f2, it will require a continuous current flow to maintain the operating frequency at f2 for the entire time period (e.g., without current, the electromagnet will stop emitting magnetic flux).

[0058] In this way, various embodiments of the present invention can facilitate flux tuning of the qubit device 102 without requiring a constant current flow throughout the entire duration of flux tuning. In contrast, conventional systems / techniques rely solely on electromagnets and therefore require a continuous current flow throughout the entire duration of flux tuning. As mentioned above, this can lead to overheating and instability. The various embodiments of the present invention eliminate the need for such a continuous and / or active current flow, resulting in less such overheating and instability. The various embodiments of the present invention thus solve the technical problems in the prior art and therefore constitute a specific technical improvement in the field of flux tuning.

[0059] In various embodiments, the device may include a nanoparticle magnet (e.g., 104) that emits a tunable permanent magnetic field (e.g., 106). In various aspects, the operating frequency of the Josephson junction device (e.g., 102) may be based on the tunable permanent magnetic field. In various instances, the device may further include a flux coil (e.g., 112) that can tune the tunable permanent magnetic field. In various embodiments, the nanoparticle magnet may include manganese nanoparticles embedded in a silicon matrix. In various embodiments, the device may further include an electrode (e.g., 108) that can apply a current (e.g., 110) to the nanoparticle magnet when it is exposed to the magnetic field (e.g., 114) of the flux coil. This can thereby change the value of the tunable permanent magnetic field. In various embodiments, based on the tunable permanent magnetic field reaching a threshold, the electrode can remove the current and the flux coil can remove the magnetic field.

[0060] In various aspects, embodiments of the present invention can be implemented as flux-tuned arrays of qubit devices 102. For example, if the quantum circuit comprises an m-by-n array of qubit devices 102 on a substrate (for any suitable positive integers m and n), a corresponding m-by-n array of permanent magnets 104 and a corresponding m-by-n array of electromagnets 112 can be implemented to tune the m-by-n array of qubit devices 102.

[0061] In all respects, the qubit device 102, the permanent magnet 104, and / or the electromagnet 112 can be arranged in any suitable physical configuration such that the permanent magnet 104 can interact electromagnetically with the qubit device 102 and the electromagnet 112 can interact electromagnetically with the permanent magnet 104.

[0062] Figure 2 A flowchart is shown of an exemplary non-limiting method 200 for facilitating quantum tuning via a permanent magnet flux element according to one or more embodiments described herein. In various aspects, system 100 may facilitate method 200.

[0063] In various embodiments, action 202 may include emitting a first magnetic flux (e.g., 106) onto a qubit device (e.g., 102) via a tunable permanent magnet (e.g., 104) to facilitate flux tuning of the qubit device. In various cases, this may be facilitated without induced current (e.g., electrode 108 and electromagnet 112 may be de-energized) because the tunable permanent magnet does not require induced current to emit magnetic flux.

[0064] In various aspects, action 204 may include applying a first current (e.g., 110) to the tunable permanent magnet (e.g., via electrode 108).

[0065] In various instances, action 206 may include transmitting a second magnetic flux (e.g., 114) onto a tunable permanent magnet via an electromagnet (e.g., 112). In various cases, this may be facilitated by applying a second current (e.g., 118) to the electromagnet via a second electrode (e.g., 116).

[0066] In various embodiments and as shown in action 208, the strength of the first magnetic flux can be changed accordingly when the tunable permanent magnet is exposed to both the first current and the second magnetic flux. In various aspects, the tunable permanent magnet may include manganese nanoparticles embedded in a silicon matrix, since the manganese nanoparticles embedded in the silicon matrix can be controllably magnetized by applying a current to the silicon matrix in the presence of an external magnetic field.

[0067] In various aspects, action 210 may include removing a first current (e.g., via electrode 108) based on the first magnetic flux reaching a predetermined, threshold, and / or desired intensity, and removing a second magnetic flux via an electromagnet. In various aspects, removing the second current may facilitate the removal of the second magnetic flux by the electromagnet.

[0068] Figure 3-7 A block diagram is shown illustrating an exemplary non-limiting intermediate structure comprising manganese nanoparticles embedded in a silicon matrix, which can be used to facilitate quantum tuning via a permanent magnet flux element, according to one or more embodiments described herein. That is, Figure 3-7 The fabrication of tunable permanent magnets (e.g., 102) via manganese nanoparticles embedded in a silicon matrix is ​​depicted in exemplary and high-level descriptions. It should be understood that... Figure 3-7 This is merely illustrative and not restrictive. For the sake of brevity, various well-known details regarding patterning, deposition, etching, planarization, annealing, and / or any other aspects of superconductor and / or semiconductor manufacturing have been omitted.

[0069] Figure 3A cross-sectional view 302 of the initial substrate structure and a corresponding top view 304 of the initial substrate structure are shown. The cross-sectional view 302 is taken at section 306. As shown, the fabrication process can begin with substrate 308. Substrate 308 may include silicon, sapphire, and / or any other suitable wafer material. As shown, a silicon oxide polishing stop 310 may be deposited on substrate 308. In various aspects, the silicon oxide polishing stop 310 may alternatively include titanium, titanium nitride, copper to facilitate easier electroplating, and / or any other suitable material. As shown, a resist layer 312 may be deposited on the silicon oxide polishing stop 310 and may be patterned to create trenches of any suitable shape. Figure 3 In the example shown, a rectangular groove pattern is illustrated in top view 304.

[0070] Figure 4 An intermediate substrate structure is shown (e.g., from...) Figure 3 (Continued) Cross-sectional view 402 and corresponding top view 404 of the intermediate substrate structure. Cross-sectional view 402 is taken at cross-section 406. As shown, reactive ion etching (e.g., and / or any other suitable etching technique) can be performed to etch trench 408 into substrate 308. In addition, resist layer 312 can be stripped.

[0071] Figure 5 An intermediate substrate structure is shown (e.g., from...) Figure 4 (Continued) Cross-sectional view 502 and corresponding top view 504 of the intermediate substrate structure. Cross-sectional view 502 is taken at cross-section 506. As shown, a silicon-manganese film 508 can be deposited (e.g., by co-evaporation) onto the intermediate substrate structure and in the trenches 408. In various embodiments, the silicon-manganese film 508 can be doped polycrystalline silicon with added manganese. In various aspects, the silicon-manganese film may include about 40% manganese. In various other aspects, the silicon-manganese film may include about 50% manganese. In various other embodiments, any suitable percentage of manganese can be implemented.

[0072] Figure 6 An intermediate substrate structure is shown (e.g., from...) Figure 5 (Continued) Cross-sectional view 602 and corresponding top view 604 of the intermediate substrate structure. Cross-sectional view 602 is taken at cross-section 606. As shown, chemical mechanical polishing and / or chemical mechanical planarization can be performed to remove the portion of the silicon-manganese film 508 above the silicon oxide polishing stop 310. The result may be that the silicon-manganese film 508 is located in the trench 408. In various embodiments, the intermediate substrate structure may be annealed at 400 degrees Celsius in hydrogen (e.g., H2). In various aspects, this annealing may cause the manganese in the silicon-manganese film 508 to aggregate into manganese nanoparticles. In various aspects, any suitable annealing temperature may be implemented.

[0073] Figure 7An intermediate substrate structure is shown (e.g., from...) Figure 6 (Continued) Cross-sectional view 702 and corresponding top view 704 of the intermediate substrate structure. Cross-sectional view 702 is taken at section 706. As shown, the silicon oxide polishing stop 310 is peelable (e.g., via dilute hydrofluoric acid (DHF) impregnation), which in some cases can also remove possible metal contamination from the silicon oxide polishing stop 310.

[0074] In various embodiments, the result of the above operations may be the formation of a silicon-manganese film 508 occupying trench 408, wherein the silicon-manganese film 508 contains manganese nanoparticles. The manganese nanoparticles can be magnetized (as explained above) by applying a current (e.g., 110) to the silicon-manganese film 508 while simultaneously exposing the silicon-manganese film 508 to an external magnetic field (e.g., 114) and / or otherwise in the presence of an external magnetic field (e.g., 114). Once magnetized by the current and the external magnetic field, the silicon-manganese film 508 in trench 408 can emit its own magnetic field (e.g., 106). In various embodiments, the magnetism of the manganese nanoparticles can be controlled by controlling the current exposed to the silicon-manganese film 508 and the external magnetic field. In various embodiments, the magnetism of the manganese nanoparticles can be reset by running a current along (e.g., along and / or parallel to) the axis of the external magnetic field.

[0075] Figure 8-14 A block diagram is shown illustrating an exemplary, non-limiting intermediate structure, according to one or more embodiments described herein, comprising a qubit device that can be used to facilitate quantum tuning via a permanent magnet flux element. That is, Figure 8-14 The qubit device 102 is illustrated in an exemplary and high-level manner. Although Figure 8-14 This demonstrates how the qubit device 102 can be formed on the same substrate as the silicon-manganese film 508 (e.g., on the same substrate as the permanent magnet 104), but it should be understood that the fabrication operations described herein can be performed to form the qubit device 102 on any suitable separate substrate. It should be understood that... Figure 8-14 This is merely illustrative and not restrictive. For the sake of brevity, various well-known details regarding patterning, deposition, etching, planarization, annealing, and / or any other aspects of superconductor and / or semiconductor manufacturing have been omitted.

[0076] Figure 8 An intermediate substrate structure is shown (e.g., from...) Figure 7(Continued) Cross-sectional view 802 and corresponding top view 804 of the intermediate substrate structure. Cross-sectional view 802 is taken at cross-section 806. As shown, a superconductor 808 (e.g., niobium, vanadium, tantalum, tantalum nitride, tungsten, titanium, titanium nitride, and / or any other suitable superconducting material) can be deposited on substrate 308 (and may cover silicon manganese film 508), and a resist layer 810 can be deposited on superconductor 808. As shown in top view 804, the resist layer 810 can be patterned to form two sets of appropriately shaped wires (e.g., electrodes): a first pattern corresponding to a first set of wires 812 of silicon manganese film 508, and a second pattern corresponding to a second set of wires 814.

[0077] Figure 9 An intermediate substrate structure is shown (e.g., from...) Figure 8 (Continued) Cross-sectional view 902 and corresponding top view 904 of the intermediate substrate structure. Cross-sectional view 902 is taken at cross-section 906. As shown, reactive ion etching can be performed to etch superconducting wires 908 and 910, and the resist layer 810 can be stripped. As shown, the result can be that the silicon-manganese film 508 can have a pair of superconducting wires 908 (e.g., electrodes). Also as shown, a second pair of superconducting wires 910 that can be used to form the qubit device 102 can be present on the substrate 308.

[0078] Figure 10 An intermediate substrate structure is shown (e.g., from...) Figure 9 (Continued) Cross-sectional view 1002 and corresponding top view 1004 of the intermediate substrate structure. Cross-sectional view 1002 is taken at cross-section 1006. As shown, a lift-off resist layer 1008 can be deposited on the intermediate substrate structure, and a photoresist / hard mask layer 1010 can be deposited on the lift-off resist layer 1008. In various aspects, the lift-off resist layer 1008 and the photoresist / hard mask layer 1010 can be used to facilitate the fabrication of the qubit device 102 (e.g., via dual-angle evaporation).

[0079] Figure 11 An intermediate substrate structure is shown (e.g., from...) Figure 10 (Continued) Cross-sectional view 1102 and corresponding top view 1104 of the intermediate substrate structure. Cross-sectional view 1102 is taken at section 1106. In various aspects, dual-angle evaporation can be facilitated. Specifically, in various aspects, the Josephson junction electrode layer 1108 (e.g., aluminum and / or any other suitable Josephson junction material) can be at a first angle (e.g., at...) Figure 11 Deposits (from upper right to lower left).

[0080] Figure 12 An intermediate substrate structure is shown (e.g., from...) Figure 11(Continued) Cross-sectional view 1202 and corresponding top view 1204 of the intermediate substrate structure. Cross-sectional view 1202 is taken at cross-section 1206. As shown, the Josephson junction electrode layer 1108 can be oxidized to produce an oxide layer 1208 (e.g., aluminum oxide).

[0081] Figure 13 An intermediate substrate structure is shown (e.g., from...) Figure 12 (Continued) Cross-sectional view 1302 and corresponding top view 1304 of the intermediate substrate structure. Cross-sectional view 1302 is taken at cross-section 1306. As shown, the second Josephson junction electrode layer 1308 (e.g., aluminum and / or any other suitable Josephson junction material) can be at a second angle (e.g., at...) Figure 13 The material is deposited on the intermediate substrate structure from top left to bottom right.

[0082] Figure 14 An intermediate substrate structure is shown (e.g., from...) Figure 13 (Continued) Cross-sectional view 1402 and corresponding top view 1404 of the intermediate substrate structure. Cross-sectional view 1402 is taken at cross-section 1406. As shown, the stripper resist layer 1008 and photoresist / hard mask layer 1010 can be stripped / removed. As shown, the result can be that the substrate 308 now has a Josephson junction 1408 (e.g., aluminum / alumina / aluminum Josephson junction) coupled to a pair of electrodes (e.g., 910). In various respects, the Josephson junction 1408 can be considered as a qubit device 102. Although Figure 14 Only a single Josephson junction 1408 is depicted (which will typically have a fixed operating frequency), but it should be understood that this is merely for ease of demonstration and that the aforementioned fabrication operations (e.g., bicornuate evaporation and / or any other suitable technique) can be implemented to fabricate any suitable and flux-tunable qubit device on substrate 308. Also as shown, substrate 308 can now have a silicon-manganese film 508 in trench 408 and coupled to a pair of electrodes (e.g., 908). This collective structure can be considered as a tunable nanoparticle magnet 1410. In various respects, the tunable nanoparticle magnet 1410 can be considered as a permanent magnet 104.

[0083] Figure 15-22 A block diagram is shown illustrating an exemplary non-limiting intermediate structure comprising a flux coil that can be used to facilitate quantum tuning via a permanent magnet flux element, according to one or more embodiments described herein. That is, Figures 15 to 22 The electromagnet 112 (e.g., flux coil) is depicted, both exemplarily and at a high level, as can be formed. Although Figures 15 to 22The diagram illustrates how the electromagnet 112 can be formed on a substrate different from the silicon-manganese film 508 (e.g., on a substrate different from the permanent magnet 104), but it should be understood that the fabrication operations described herein can be performed to form the electromagnet 112 on any suitable substrate, including the same substrate on which the permanent magnet 104 is formed. It should be understood that... Figure 15-22 These are merely illustrative and not limiting. For the sake of brevity, various well-known details regarding patterning, deposition, etching, planarization, annealing, and / or any other aspects of superconductor and / or semiconductor fabrication have been omitted.

[0084] Figure 15 A cross-sectional view 1502 and a corresponding top view 1504 of the initial substrate structure are shown. The cross-sectional view 1502 is taken at section 1506. As shown, the substrate 1508 may include silicon, sapphire, and / or any other suitable wafer material. A superconductor 1510 (e.g., niobium, vanadium, tantalum, tantalum nitride, tungsten, titanium, titanium nitride, and / or any other suitable superconductor) may be deposited on the substrate 1508. As shown, a resist layer 1512 may be deposited on the superconductor 1510 and patterned into any suitable flux coil shape. In the example shown, the resist layer 1512 is patterned into a helical shape.

[0085] Figure 16 An intermediate substrate structure is shown (e.g., from...) Figure 15 (Continued) Cross-sectional view 1602 and corresponding top view 1604 of the intermediate substrate structure. Cross-sectional view 1602 is taken at section 1606. As shown, reactive ion etching (e.g., and / or any other suitable etching technique) can be used to etch the superconductor 1510 and can strip the resist layer 1512. The result can be a superconducting coil 1608. As shown, the superconducting coil 1608 has a center / inner lead (e.g., the endpoint of the superconducting material 1508 located at the center of the superconducting coil 1608) and an edge / outer lead (e.g., the endpoint of the superconducting material 1508 located at the left outer edge of the superconducting coil 1608).

[0086] Figure 17 An intermediate substrate structure is shown (e.g., from...) Figure 16 (Continued) Cross-sectional view 1702 and corresponding top view 1704 of the intermediate substrate structure. Cross-sectional view 1702 is taken at section 1706. As shown, dielectric 1708 (e.g., amorphous silicon, silicon dioxide and / or any other suitable dielectric material) may be deposited on the intermediate substrate structure.

[0087] Figure 18 An intermediate substrate structure is shown (e.g., from...) Figure 17(Continued) Cross-sectional view 1802 and corresponding top view 1804 of the intermediate substrate structure. Cross-sectional view 1802 is taken at section 1806. As shown, a resist layer 1808 can be deposited on the intermediate substrate structure and can be patterned to create multiple vias to the center / inner lead of the superconducting coil 1608 and the edge / outer lead of the superconducting coil 1608. As shown, patterned trenches 1810 can then be used in etching to create vias through the dielectric 1708 to the center / inner lead, and patterned trenches 1812 can then be used in etching to create vias through the dielectric 1708 to the edge / outer lead.

[0088] Figure 19 An intermediate substrate structure is shown (e.g., from...) Figure 18 (Continued) Cross-sectional view 1902 and corresponding top view 1904 of the intermediate substrate structure. Cross-sectional view 1902 is taken at section 1906. As shown, reactive ion etching (e.g., and / or any other suitable etching technique) can be used to etch the vias and can strip the resist layer 1808. As shown, the result can be via 1908 through the dielectric 1708 to the center / inner lead of the superconducting coil 1608, and via 1910 through the dielectric 1708 to the edge / outer lead of the superconducting coil 1608. In various aspects, these vias 1908 and / or 1910 need not be uniform; in some cases, they can be elongated and / or enlarged near the top of the superconducting coil 1608 to provide a more conductive area / contact.

[0089] Figure 20 An intermediate substrate structure is shown (e.g., from...) Figure 19 (Continued) Cross-sectional view 2002 and corresponding top view 2004 of the intermediate substrate structure. Cross-sectional view 2002 is taken at section 2006. As shown, superconductor 2008 (e.g., niobium, vanadium, tantalum, tantalum nitride, tungsten, titanium, titanium nitride, and / or any other suitable superconductor) can be deposited on this intermediate substrate structure. In various aspects, superconductor 2008 can be used to create wires / electrodes coupled to leads of superconducting coil 1608.

[0090] Figure 21 An intermediate substrate structure is shown (e.g., from...) Figure 20(Continued) Cross-sectional view 2102 and corresponding top view 2104 of the intermediate substrate structure. Cross-sectional view 2102 is taken at section 2106. As shown, the resist layer 2108 can be deposited and patterned into conductors of appropriate shape for contacting the leads of the superconducting coil 1608. As shown in top view 2104, the vertically shown portion of the resist layer 2108 can be used to etch superconducting wires (e.g., electrodes) that contact the center / inner leads of the superconducting coil 1608, and the horizontally shown portion of the resist layer 2108 can be used to etch superconducting wires (e.g., electrodes) that contact the edge / outer leads of the superconducting coil 1608.

[0091] Figure 22 An intermediate substrate structure is shown (e.g., from...) Figure 21 (Continued) Cross-sectional view 2202 and corresponding top view 2204 of the intermediate substrate structure. Cross-sectional view 2202 is taken at cross-section 2206. As shown, reactive ion etching (e.g., and / or any other suitable etching technique) can be used to etch the superconductor 2008 and can strip the resist layer 2108. As shown, the result can be a flux coil 2208 (e.g., a superconducting coil 1608 having electrodes coupled to its center / inner leads and its edge / outer leads). In various respects, flux coil 2208 can be considered as electromagnet 112.

[0092] In various aspects, stripping and flyover wiring structures can be used (e.g., see above). Figure 15-22 The manufacturing operation discussed is the reverse of the manufacturing operation to manufacture flux coil 2208.

[0093] Figure 23 A block diagram of an exemplary non-limiting device facilitating quantum tuning via a permanent magnet flux element according to one or more embodiments described herein is shown. In various aspects, Figure 23 Several exemplary and non-limiting configurations that can be implemented in various embodiments of the present invention are described.

[0094] As shown in configuration 2300a, the qubit device 102 can be coupled (e.g., fabricated on) a first substrate 2302, and the permanent magnet 104 and electromagnet 112 can be coupled (e.g., fabricated on) a second substrate 2304. In various aspects, the permanent magnet 104 and electromagnet 112 can be fabricated in different chip planes of the second substrate 2304, as shown, such that they can interact electromagnetically with each other. In various instances, the second substrate 2304 can be bonded above the first substrate 2302 using air bridge gaps (e.g., with suitable spacers), thereby allowing the permanent magnet 104 and the qubit device 102 to interact electromagnetically with each other. In various aspects, a metal film (e.g., copper) can be applied under the first substrate 2302 to improve thermal conductivity (e.g., to aid heat dissipation). In various aspects, a spacer wafer (not shown) can be placed between the first substrate 2302 and the second substrate 2304, leaving the chip area open and using cut-out areas for the spacer areas. In various aspects, organic adhesives and / or silver epoxy resin can be applied.

[0095] As shown in configuration 2300b, the qubit device 102 and the permanent magnet 104 can be coupled (e.g., fabricated on) a first substrate 2302, and the electromagnet 112 can be coupled (e.g., fabricated on) a second substrate 2304. In different cases, the second substrate 2304 can be joined over the first substrate 2302 using an air bridge gap (e.g., with suitable spacers), allowing the permanent magnet 104 and the electromagnet 112 to interact electromagnetically with each other. Similarly, suitable spacers can be implemented.

[0096] As shown in configuration 2300c, the first substrate 2302 and the second substrate 2304 can be bonded back-to-back to achieve external electromagnetic interaction between the permanent magnet 104 and the electromagnet 112. In various aspects, this allows for individual setting of the magnetic alignment for each qubit device. In various cases, a suitable adhesive bonding layer can be implemented to bond the first substrate 2302 to the second substrate 2304. In various cases, simple low-temperature bonding with spin-coated organic materials can be used. In various cases, a 150 nm coverage can be achieved using standard bonding equipment. In various cases, it is possible to contact the wires / electrodes (e.g., contact pads) of the qubit device 102 from above and the wires / electrodes (e.g., contact pads) of the electromagnet 112 from below.

[0097] It should be understood that Figure 23This is merely illustrative and not restrictive, and is not necessarily drawn to scale. Any other suitable configuration may be implemented in different embodiments of the invention. In various aspects, any suitable configuration can be implemented to place the permanent magnet 104 in sufficient spatial proximity to the qubit device 102, wherein “sufficient spatial proximity” between the permanent magnet 104 and the qubit device 102 can include any suitable physical distance such that the permanent magnet 104 can interact electromagnetically with the qubit device 102 (e.g., a first magnetic flux 106 can be emitted onto it). In various aspects, it should be understood that the “sufficient spatial proximity” between the permanent magnet 104 and the qubit device 102 can vary with the operating context (e.g., the size of the qubit device 102, the strength and / or size of the permanent magnet 104). In various aspects, any suitable configuration can be implemented to place the electromagnet 112 in sufficient spatial proximity to the permanent magnet 104, wherein "sufficient spatial proximity" between the electromagnet 112 and the permanent magnet 104 can include any suitable physical distance such that the electromagnet 112 can electromagnetically interact with the permanent magnet 104 (e.g., a second magnetic flux 114 can be emitted onto the permanent magnet 104). In various aspects, it should be understood that "sufficient spatial proximity" between the electromagnet 112 and the permanent magnet 104 can vary with the operating context (e.g., the size of the permanent magnet 104, the strength and / or size of the electromagnet 112).

[0098] Figure 24 A flowchart of an exemplary non-limiting method 2400 for facilitating quantum tuning via a permanent magnet flux element according to one or more embodiments described herein is shown. In various aspects, method 2400 may be implemented by system 100.

[0099] In various embodiments, action 2402 may include transmitting a first magnetic flux (e.g., 106) onto the qubit device via a permanent magnet (e.g., 104) adjacent to the qubit device (e.g., 102). In various aspects, the operating frequency of the qubit device may be based on the first magnetic flux.

[0100] In various instances, action 2404 may include projecting a second magnetic flux (e.g., 114) onto the permanent magnet via an electromagnet (e.g., 112) adjacent to the permanent magnet. In various aspects, the second magnetic flux may tune the first magnetic flux.

[0101] In various aspects, action 2406 may include applying a current (e.g., 110) to the permanent magnet via an electrode (e.g., 108) in the presence of a second magnetic flux. In different cases, this may change the strength of the first magnetic flux.

[0102] In different instances, action 2408 may include removing current via electrodes and removing a second magnetic flux via an electromagnet based on a first magnetic flux reaching a predetermined intensity.

[0103] In various aspects, the following brief discussion provides some exemplary and non-limiting quantitative values ​​that can be implemented in various embodiments of the invention. In different embodiments, one flux quantum (e.g., 2 x 10⁻⁶) is applied at the qubit device 102. -15 Tm 2 This can be beneficial. For 10x10μm 2 A squid loop, which may require 0.2 Gauss at the squid loop. In different instances, it may be beneficial to set the flux (e.g., 10⁶) with an accuracy of approximately 1% (e.g., meaning the magnetic field should be adjustable in increments of less than 0.002 Gauss). Better stability than the limitations set by the inherent flux noise, which has approximately 1 microPhiO (2 x 10⁶) at 1 Hz, may also be beneficial. -21 Tm 2 The 1 / f characteristic of 1 / root Hz (where f is the operating frequency of the qubit device 102). As a rough approximation, it may be beneficial to have a total root-mean-square stability below the level of 1 microPhi0, or 10 x 10 μm. 2 The field stability within the loop is less than 2x10. -7 Gaussian root mean square.

[0104] In different embodiments, the permanent magnet 104 can be tuned in situ.

[0105] To provide additional context for the various embodiments described herein, Figure 25 The following discussion is intended to provide a brief overview of a suitable computing environment 2500 in which various embodiments of the embodiments described herein may be implemented. While the embodiments have been described above in the general context of computer-executable instructions that can run on one or more computers, those skilled in the art will recognize that the embodiments may also be implemented in combination with other program modules and / or as a combination of hardware and software.

[0106] Typically, program modules include routines, programs, components, data structures, etc., that perform specific tasks or implement specific abstract data types. Furthermore, those skilled in the art will recognize that the methods of this invention can be practiced with other computer system configurations, including single-processor or multi-processor computer systems, minicomputers, mainframe computers, Internet of Things (IoT) devices, distributed computing systems, and personal computers, handheld computing devices, microprocessor-based or programmable consumer electronics, each of which can be operatively coupled to one or more associated devices.

[0107] The embodiments illustrated in this document can also be implemented in a distributed computing environment, where some tasks are performed by remote processing devices linked via a communication network. In a distributed computing environment, program modules can reside on both local and remote storage devices.

[0108] Computing devices typically include a variety of media, which may include computer-readable storage media, machine-readable storage media, and / or communication media, these two terms being used differently from each other herein. A computer-readable storage medium or a machine-readable storage medium can be any available storage medium accessible by a computer, and includes volatile and non-volatile media, removable and non-removable media. By way of example and not limitation, a computer-readable storage medium or a machine-readable storage medium can be implemented in combination with any method or technique used for storing information such as computer-readable or machine-readable instructions, program modules, structured data, or unstructured data.

[0109] Computer-readable storage media may include, but is not limited to: random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, compact disc read-only memory (CDROM), digital universal disc (DVD), Blu-ray disc (BD) or other optical disc storage, magnetic tape cassettes, magnetic tape, disk storage or other magnetic storage devices, solid-state drives or other solid-state storage devices, or other tangible and / or non-transient media that can be used to store desired information. In this regard, the terms “tangible” or “non-transient” as used herein with respect to storage, memory, or computer-readable media shall be understood to exclude only the propagation of transient signals themselves as a modifier, and shall not waive the rights to all standard storage, memory, or computer-readable media that do not only propagate transient signals themselves.

[0110] A computer-readable storage medium can be accessed by one or more local or remote computing devices, for example via access requests, queries or other data retrieval protocols, for various operations with respect to the information stored in the medium.

[0111] Communication media typically embody computer-readable instructions, data structures, program modules, or other structured or unstructured data as data signals such as modulated data signals (e.g., carrier waves or other transmission mechanisms), and include any medium for delivering or transmitting information. The term "modulated data signal" refers to a signal whose characteristics are set or altered in a manner that encodes information in one or more signals. By way of example and not limitation, communication media include wired media, such as wired networks or direct-line connections, and wireless media, such as acoustic, RF, infrared, and other wireless media.

[0112] Refer again Figure 25An exemplary environment 2500 for implementing various embodiments of the aspects described herein includes a computer 2502, which includes a processing unit 2504, system memory 2506, and a system bus 2508. The system bus 2508 couples system components (including, but not limited to, system memory 2506) to the processing unit 2504. The processing unit 2504 can be any of a variety of commercial processors. Dual microprocessors and other multiprocessor architectures can also be used as the processing unit 2504.

[0113] System bus 2508 can be any of several types of bus structures capable of further interconnecting to memory buses (with or without memory controllers), peripheral buses, and local buses using any of a variety of commercially available bus architectures. System memory 2506 includes ROM 2510 and RAM 2512. The Basic Input / Output System (BIOS) can be stored in non-volatile memory such as ROM, erasable programmable read-only memory (EPROM), or EEPROM. The BIOS contains basic routines such as those that help transfer information between components within computer 2502 during startup. RAM 2512 may also include high-speed RAM (such as static RAM for caching data).

[0114] Computer 2502 further includes an internal hard disk drive (HDD) 2514 (e.g., EIDE, SATA), one or more external storage devices 2516 (e.g., floppy disk drive (FDD) 2516, memory stick or flash drive reader, memory card reader, etc.), and a drive 2520, such as a solid-state drive or optical disc drive, which can read from or write to a disk 2522 such as a CD-ROM, DVD, BD, etc. Alternatively, in cases involving solid-state drives, disk 2522 is not included unless it is separate. Although the internal HDD 2514 is shown as residing within computer 2502, the internal HDD 2514 can also be configured for external use in a suitable chassis (not shown). Furthermore, although not shown in environment 2500, a solid-state drive (SSD) can be used as a supplement to or replacement for HDD 2514. HDD 2514, external storage device 2516, and drive 2520 can be connected to system bus 2508 via HDD interface 2524, external storage interface 2526, and drive interface 2528, respectively. Interface 2524 for the external drive implementation may include at least one or both of Universal Serial Bus (USB) and Institute of Electrical and Electronics Engineers (IEEE) 1394 interface technologies. Other external drive connection technologies are contemplated in the embodiments described herein.

[0115] The drive and its associated computer-readable storage medium provide non-volatile storage of data, data structures, computer-executable instructions, etc. For computer 2502, the drive and storage medium accommodate any data stored in a suitable digital format. Although the above description of computer-readable storage media refers to a corresponding type of storage device, those skilled in the art will understand that other types of computer-readable storage media (whether currently existing or developed in the future) may also be used in the example operating environment, and further, any such storage medium may contain computer-executable instructions for performing the methods described herein.

[0116] Multiple program modules may be stored in the drive and RAM 2512, including an operating system 2530, one or more application programs 2532, other program modules 2534, and program data 2536. All or part of the operating system, applications, modules, and / or data may also be cached in RAM 2512. The systems and methods described herein can be implemented using different commercially available operating systems or combinations of operating systems.

[0117] Computer 2502 may optionally include emulation technology. For example, a hypervisor (not shown) or other intermediary may emulate the hardware environment of operating system 2530, and the emulated hardware may optionally be compatible with... Figure 25 The hardware shown is different. In such an embodiment, the operating system 2530 may include one of a plurality of virtual machines (VMs) hosted at the computer 2502. Furthermore, the operating system 2530 may provide a runtime environment for the application 2532, such as the Java Runtime Environment or the .NET Framework. A runtime environment is a consistent execution environment that allows the application 2532 to run on any operating system that includes a runtime environment. Similarly, the operating system 2530 may support containers, and the application 2532 may be in the form of a container, which is a lightweight, standalone executable package of software that includes, for example, code, runtime, system tools, system libraries, and application settings.

[0118] Furthermore, computer 2502 may enable security modules, such as a Trusted Processing Module (TPM). For example, with TPM, before loading the boot component, the boot component hashes the boot component in time and waits for the result to match a security value. This process can occur at any layer of the computer 2502's code execution stack, such as at the application execution level or at the operating system (OS) kernel level, thereby achieving security at any code execution level.

[0119] Users can input commands and information into computer 2502 through one or more wired / wireless input devices (e.g., keyboard 2538, touchscreen 2540, and pointing devices such as mouse 2542). Other input devices (not shown) may include microphones, infrared (IR) remote controls, radio frequency (RF) remote controls, or other remote controls, joysticks, virtual reality controllers and / or virtual reality headsets, game controllers, styluses, image input devices (e.g., cameras), gesture sensor input devices, visual motion sensor input devices, emotion or face detection devices, biometric input devices (e.g., fingerprint or iris scanners), or the like. These and other input devices are typically connected to processing unit 2504 via input device interface 2544, which can be coupled to system bus 2508, but can be connected via other interfaces such as parallel ports, IEEE 1394 serial ports, game ports, USB ports, IR interfaces, etc. Interfaces, etc.

[0120] The monitor 2546 or other types of display devices can also be connected to the system bus 2508 via an interface such as the video adapter 2548. In addition to the monitor 2546, the computer typically includes other peripheral output devices (not shown), such as speakers, printers, etc.

[0121] Computer 2502 can operate in a networked environment using logical connections via wired and / or wireless communications to one or more remote computers (such as remote computer 2550). Remote computer 2550 can be a workstation, server computer, router, personal computer, laptop computer, microprocessor-based entertainment device, peer-to-peer device, or other public network node, and typically includes many or all of the elements described relative to computer 2502; however, for simplicity, only memory / storage device 2552 is shown. The depicted logical connections include wired / wireless connections to a local area network (LAN) 2554 and / or a larger network (e.g., a wide area network (WAN) 2556). Such LAN and WAN networking environments are common in offices and companies and facilitate enterprise-wide computer networks, such as intranets, all of which can connect to global communication networks, such as the Internet.

[0122] When used in a LAN networking environment, computer 2502 can connect to local network 2554 via a wired and / or wireless communication network interface or adapter 2558. Adapter 2558 can facilitate wired or wireless communication to LAN 2554, which may also include a wireless access point (AP) deployed thereon for communicating with adapter 2558 in wireless mode.

[0123] When used in a WAN networking environment, computer 2502 may include modem 2560, or may be connected to a communication server on WAN 2556 via other means (such as via the Internet) for establishing communication over WAN 2556. Modem 2560, which may be internal or external and wired or wireless, may be connected to system bus 2508 via input device interface 2544. In a networking environment, program modules depicted relative to computer 2502 or portions thereof may be stored in remote memory / storage device 2552. It should be understood that the network connection shown is an example, and other means for establishing communication links between computers may be used.

[0124] When used in a LAN or WAN networking environment, computer 2502 can access cloud storage systems or other network-based storage systems as a supplement to or replacement for external storage device 2516 as described above, such as, but not limited to, network virtual machines providing one or more aspects of information storage or processing. Typically, the connection between computer 2502 and the cloud storage system can be established, for example, via adapter 2558 or modem 2560 through LAN 2554 or WAN 2556. When computer 2502 is connected to an associated cloud storage system, external storage interface 2526 can manage the storage provided by the cloud storage system by means of adapter 2558 and / or modem 2560, just like other types of external storage. For example, external storage interface 2526 can be configured to provide access to cloud storage sources as if those sources were physically connected to computer 2502.

[0125] Computer 2502 is operable to communicate with any wireless device or entity operably arranged in wireless communication, such as a printer, scanner, desktop and / or laptop computer, portable data assistant, communication satellite, any device or location associated with a wirelessly detectable tag (e.g., self-service terminal, newsstand, store shelf, etc.), and telephone. This may include Wi-Fi and Wireless technology. Therefore, communication can be a predefined structure like a traditional network, or simply self-organizing communication between at least two devices.

[0126] This invention can be a system, method, apparatus, and / or computer program product at any possible level of technical detail integration. A computer program product may include a computer-readable storage medium (or media) having computer-readable program instructions thereon for causing a processor to execute aspects of the invention. A computer-readable storage medium may be a tangible means capable of retaining and storing instructions for use by an instruction execution device. A computer-readable storage medium may be, for example, but not limited to, electronic storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, or any suitable combination thereof. A non-exhaustive list of more specific examples of computer-readable storage media may also include: portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), static random access memory (SRAM), portable compact disk read-only memory (CD-ROM), digital universal disk (DVD), memory sticks, floppy disks, mechanical encoding devices such as punch cards or protrusions in slots having instructions recorded thereon, and any suitable combination thereof. As used herein, computer-readable storage media should not be construed as transient signals themselves, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., light pulses passing through fiber optic cables), or electrical signals transmitted through wires.

[0127] The computer-readable program instructions described herein can be downloaded from a computer-readable storage medium to a corresponding computing / processing device via a network (e.g., the Internet, a local area network, a wide area network, and / or a wireless network), or downloaded to an external computer or external storage device. The network may include copper transmission cables, optical transmission fibers, wireless transmissions, routers, firewalls, switches, gateway computers, and / or edge servers. A network adapter card or network interface in each computing / processing device receives the computer-readable program instructions from the network and forwards them to a computer-readable storage medium within the corresponding computing / processing device. The computer-readable program instructions used to perform the operations of this invention may be assembly instructions, instruction set architecture (ISA) instructions, machine instructions, machine-dependent instructions, microcode, firmware instructions, status setting data, integrated circuit configuration data, or source code or object code written in any combination of one or more programming languages, including object-oriented programming languages ​​(such as Smalltalk, C++, etc.) and procedural programming languages ​​(such as the "C" programming language or similar programming languages). Computer-readable program instructions may execute entirely on a user's computer, partially on a user's computer, as a standalone software package, partially on a user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer may be connected to the user's computer via any type of network (including a local area network (LAN) or a wide area network (WAN)) or may be connected to an external computer (e.g., via the Internet using an Internet service provider). In some embodiments, electronic circuitry including, for example, programmable logic circuitry, field-programmable gate arrays (FPGAs), or programmable logic arrays (PLAs) may be personalized to execute computer-readable program instructions by utilizing state information of the computer-readable program instructions in order to perform aspects of the present invention.

[0128] The present invention is described herein with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer-readable program instructions. These computer-readable program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. These computer-readable program instructions can also be stored in a computer-readable storage medium that causes a computer, programmable data processing apparatus, and / or other device to operate in a particular manner, such that the computer-readable storage medium storing the instructions comprises an article of manufacture containing instructions for implementing aspects of the functions / actions specified in one or more blocks of the flowchart illustrations and / or block diagrams. Computer-readable program instructions may also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operations to be performed on the computer, other programmable apparatus, or other device to produce computer-implemented processing, such that the instructions executed on the computer, other programmable apparatus, or other device perform the functions / actions specified in one or more boxes of a flowchart and / or block diagram.

[0129] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present invention. Each block in a flowchart or block diagram may represent a module, segment, or portion of instructions, including one or more executable instructions for implementing a specified logical function. In some alternative implementations, the functions marked in the blocks may occur in a different order than indicated in the figures. For example, depending on the functions involved, two consecutively shown blocks may actually be executed substantially simultaneously, or these blocks may sometimes be executed in reverse order. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or action or executes a combination of dedicated hardware and computer instructions.

[0130] While the subject matter has been described above in the general context of computer-executable instructions running on a computer and / or a computer program product on a computer, those skilled in the art will recognize that this disclosure can also be implemented in combination with other program modules. Typically, program modules include routines, programs, components, data structures, etc., that perform specific tasks and / or implement specific abstract data types. Furthermore, those skilled in the art will recognize that the computer implementation methods of the present invention can be practiced with other computer system configurations, including single-processor or multi-processor computer systems, small computing devices, mainframe computers, and computers, handheld computing devices (e.g., PDAs, telephones), microprocessor-based or programmable consumer or industrial electronic products, etc. The aspects shown can also be implemented in a distributed computing environment, where tasks are performed by remote processing devices linked via a communication network. However, some (if not all) aspects of the present invention can be practiced on a standalone computer. In a distributed computing environment, program modules can reside in both local and remote memory storage devices.

[0131] As used herein, the terms “component,” “system,” “platform,” “interface,” etc., may refer to and / or include computer-related entities or entities associated with an operating machine having one or more specific functions. Entities disclosed herein may be hardware, a combination of hardware and software, software, or software in execution. For example, a component may be, but is not limited to, a process running on a processor, a processor, an object, an executable file, a thread of execution, a program, and / or a computer. As an illustration, both an application running on a server and the server itself can be components. One or more components may reside within a process and / or a thread of execution, and components may reside on one computer and / or be distributed across two or more computers. In another instance, a corresponding component may execute from a different computer-readable medium having different data structures stored thereon. Components may communicate via local and / or remote processes, such as according to a signal having one or more data packets (e.g., data from a component interacting with another component in a local system, a distributed system, and / or data from a component interacting with other systems across a network such as the Internet via that signal). As another example, a component may be a device having specific functions provided by mechanical parts operated by electrical or electronic circuitry, which is operated by a software or firmware application executed by a processor. In such a case, the processor can be internal or external to the device and can execute at least a portion of the software or firmware application. As another example, the component can be a device that provides a specific function through electronic components without mechanical parts, wherein the electronic components can include a processor or other means for performing software or firmware that at least partially endows the electronic components with the functions. In one aspect, the component can be emulated via a virtual machine, for example, within a cloud computing system.

[0132] Furthermore, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or." That is, unless otherwise specified or clear from the context, "X adopts A or B" is intended to mean any natural inclusive permutation. That is, if X adopts A; X adopts B; or X adopts both A and B, then "X adopts A or B" is satisfied in any of the foregoing cases. Additionally, the articles "a" and "an" as used in the subject matter specification and figures should generally be interpreted as meaning "one or more," unless otherwise specified or clearly indicated from the context to the singular form. As used herein, the terms "example" and / or "exemplary" are used to indicate that something is used as an instance, example, or illustration. For the avoidance of doubt, the subject matter disclosed herein is not limited to such examples. Furthermore, any aspect or design described herein as an "example" and / or "exemplary" is not necessarily to be construed as superior to or better than other aspects or designs, nor does it imply the exclusion of equivalent exemplary structures and techniques known to those skilled in the art.

[0133] As used herein, the term "processor" can refer to substantially any computing processing unit or device, including but not limited to a single-core processor; a single processor with software multithreading capabilities; a multi-core processor; a multi-core processor with software multithreading capabilities; a multi-core processor with hardware multithreading technology; a parallel platform; and a parallel platform with distributed shared memory. Additionally, "processor" can refer to an integrated circuit, application-specific integrated circuit (ASIC), digital signal processor (DSP), field-programmable gate array (FPGA), programmable logic controller (PLC), complex programmable logic device (CPLD), discrete gate or transistor logic, discrete hardware components, or any combination thereof, designed to perform the functions described herein. Furthermore, processors can utilize nanoscale architectures, such as, but not limited to, molecular and quantum dot-based transistors, switches, and gates, to optimize space utilization or enhance the performance of user equipment. Processors can also be implemented as a combination of computing processing units. In this disclosure, terms such as "memory," "memory device," "database," "data storage device," "database," and substantially any other information storage component, in relation to the operation and function of a component, are used to refer to a "memory component," an entity embodied in "memory," or a component that includes memory. It should be understood that the memory and / or memory components described herein can be volatile or non-volatile memory, or may include both. By way of example and not limitation, non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM), flash memory, or non-volatile random access memory (RAM) (e.g., ferroelectric RAM (FeRAM)). Volatile memory may include, for example, RAM that can serve as an external cache memory. By way of illustration and not limitation, RAM can be obtained in many forms, such as synchronous RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), Synchlink DRAM (SLDRAM), direct Rambus RAM (DRRAM), direct Rambus dynamic RAM (DRDRAM), and Rambus dynamic RAM (RDRAM). Furthermore, the memory components of the systems or computer-implemented methods disclosed herein are intended to include (but are not limited to) these and any other suitable types of memory.

[0134] The above description includes only examples of systems and computer-implemented methods. Of course, for the purposes of describing this disclosure, it is impossible to describe every conceivable combination of components or computer-implemented method; however, those skilled in the art will recognize that many further combinations and substitutions of this disclosure are possible. Furthermore, the use of terms such as “comprising,” “having,” “possessing,” etc., in the detailed description, claims, appendices, and drawings is intended to be inclusive, similar to the interpretation of the term “comprising” when used as a transitional word in a claim.

[0135] Various embodiments have been described for illustrative purposes, but are not intended to be exhaustive or limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein has been chosen to best explain the principles of the embodiments, their practical application, or technical improvements to technologies found in the market, or to enable those skilled in the art to understand the embodiments disclosed herein.

Claims

1. A system for quantum tuning, comprising: Quantum bit devices; A permanent magnet is located in a first proximity position to the qubit device and emits a first magnetic flux onto the qubit device, wherein the operating frequency of the qubit device is based on the first magnetic flux; as well as An electromagnet is located in a second proximity to the permanent magnet and emits a second magnetic flux onto the permanent magnet, wherein the second magnetic flux tunes the first magnetic flux.

2. The system according to claim 1, wherein, The permanent magnet is a nanoparticle magnet.

3. The system according to claim 2, wherein, The nanoparticle magnet comprises manganese nanoparticles embedded in a silicon matrix.

4. The system according to claim 3, further comprising: An electrode applies a current to the nanoparticle magnet in the presence of the second magnetic flux, thereby changing the intensity of the first magnetic flux.

5. The system according to claim 4, wherein, When the first magnetic flux reaches a predetermined intensity, the electrode removes the current and the electromagnet removes the second magnetic flux.

6. The system according to any one of claims 1-5, wherein, The qubit device is a superconducting quantum interference device loop.

7. The system according to any one of claims 1-5, wherein, The qubit device is on a first substrate, and the permanent magnet and the electromagnet are on a second substrate.

8. The system according to any one of claims 1-5, wherein, The qubit device and the permanent magnet are on a first substrate, and the electromagnet is on a second substrate.

9. A method for quantum tuning, comprising: A first magnetic flux is emitted to the qubit device via a permanent magnet located in a first proximity position to the qubit device, wherein the operating frequency of the qubit device is based on the first magnetic flux; as well as A second magnetic flux is emitted onto the permanent magnet via an electromagnet located in a second proximity to the permanent magnet, wherein the second magnetic flux tunes the first magnetic flux.

10. The method according to claim 9, wherein, The permanent magnet is a nanoparticle magnet.

11. The method according to claim 10, wherein, The nanoparticle magnet comprises manganese nanoparticles embedded in a silicon matrix.

12. The method of claim 11, further comprising: In the presence of the second magnetic flux, an electric current is applied to the nanoparticle magnet via electrodes, thereby changing the strength of the first magnetic flux.

13. The method of claim 12, further comprising: Based on the first magnetic flux reaching a predetermined intensity, the current is removed via the electrode and the second magnetic flux is removed via the electromagnet.

14. The method according to any one of claims 9-13, wherein, The qubit device is a superconducting quantum interference device loop.

15. The method according to any one of claims 9-13, wherein, The qubit device is on a first substrate, and the permanent magnet and the electromagnet are on a second substrate.

16. The method according to any one of claims 9-13, wherein, The qubit device and the permanent magnet are on a first substrate, and the electromagnet is on a second substrate.

17. A device for quantum tuning, comprising: A nanoparticle magnet is located in a first proximity position to a Josephson junction device and emits a tunable permanent magnetic field onto the Josephson junction device, wherein the operating frequency of the Josephson junction device is based on the tunable permanent magnetic field. as well as A flux coil is located in a second proximity to the nanoparticle magnet and tunes the tunable permanent magnetic field.

18. The apparatus according to claim 17, wherein, The nanoparticle magnet comprises manganese nanoparticles embedded in a silicon matrix.

19. The apparatus of claim 18, further comprising: An electrode is used to apply a current to the nanoparticle magnet when the nanoparticle magnet is exposed to the magnetic field of the flux coil, thereby changing the value of the tunable permanent magnetic field.

20. The apparatus according to claim 19, wherein, When the tunable permanent magnetic field reaches a threshold, the electrode removes the current and the flux coil removes the magnetic field.

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