Display panel and display device

Abstract

The present disclosure relates to the field of display technologies, and discloses a display panel and a display device; the display panel has a display area and a bonding area provided on at least one side of the display area, and the display panel includes an array substrate, a protective layer, and a light-emitting substrate; the array substrate includes a plurality of switch components arranged in an array, a plurality of bonding pins, and a plurality of connection leads, the switch components are provided in the display area, the bonding pins are provided in the bonding area, the connection leads are connected between the switch components and the bonding pins, and a first gap is provided between two adjacent bonding pins; the protective layer at least covers the side surfaces of the bonding pins; the light-emitting substrate is provided on the side of the array substrate where the protective layer is provided, the light-emitting substrate includes a first electrode, the first electrode is connected to the switch components, and the metal activity of at least part of the material of the bonding pins is stronger than the metal activity of at least part of the material of the first electrode. The display panel has a better display effect.

Description

Technical Field

[0001] The present disclosure relates to the field of display technologies, and in particular, to a display panel and a display device including the display panel. Background Art

[0002] Organic Light-Emitting Display (OLED) panels have become the mainstream development direction in the field of display technologies due to their advantages such as self-luminescence, high brightness, good image quality, and low power consumption, and are widely used in consumer electronic products such as mobile phones, wearables, and vehicles.

[0003] However, current display panels are prone to display anomalies.

[0004] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of the present disclosure, and thus may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention

[0005] The purpose of the present disclosure is to overcome the deficiency of the above-mentioned prior art that is prone to display anomalies, and to provide a display panel that is not prone to display anomalies and a display device including the display panel.

[0006] According to one aspect of the present disclosure, a display panel is provided, which has a display area and a bonding area provided on at least one side of the display area. The display panel includes:

[0007] An array substrate, including a plurality of switch components arranged in an array, a plurality of bonding pins, and a plurality of connection leads. The switch components are provided in the display area, the bonding pins are provided in the bonding area, the connection leads are connected between the switch components and the bonding pins, and a first gap is provided between adjacent two of the bonding pins;

[0008] A protective layer, at least covering the side surfaces of the bonding pins;

[0009] A light-emitting substrate, provided on the side of the array substrate where the protective layer is provided. The light-emitting substrate includes a first electrode, and the first electrode is connected to the switch components. The metal activity of at least part of the material of the bonding pins is stronger than the metal activity of at least part of the material of the first electrode.

[0010] In an exemplary embodiment of the present disclosure, the material of the protective layer is a conductive material.

[0011] In an exemplary embodiment of the present disclosure, the metal activity of the material of the first electrode is stronger than the metal activity of the protective layer.

[0012] In an exemplary embodiment of the present disclosure, the protective layer includes a plurality of protection portions, a second gap is provided between two adjacent protection portions, the protection portions are correspondingly arranged with the bonding pins, and the orthographic projection of the protection portions on the array substrate covers and is larger than the bonding pins.

[0013] In an exemplary embodiment of the present disclosure, the material of the protective layer is graphite conductive adhesive.

[0014] In an exemplary embodiment of the present disclosure, the melting point of the protective layer is greater than or equal to 1000 °C.

[0015] In an exemplary embodiment of the present disclosure, the bonding pin at least includes a second conductive layer and a third conductive layer arranged in a stacked manner, the third conductive layer is closer to the light-emitting substrate than the second conductive layer, the metal activity of the second conductive layer is stronger than that of at least part of the material of the first electrode, and the metal activity of the first electrode is stronger than that of the third conductive layer.

[0016] In an exemplary embodiment of the present disclosure, the first electrode at least includes a fourth conductive layer and a fifth conductive layer arranged in a stacked manner, the fourth conductive layer is closer to the array substrate than the fifth conductive layer, the metal activity of the second conductive layer is stronger than that of the fourth conductive layer, and the material of the fifth conductive layer is a conductive oxide.

[0017] In an exemplary embodiment of the present disclosure, the bonding pin is set as a protruding structure, the material of the protective layer is an insulating material, the protective layer is at least arranged in the first gap and on the side surface of the bonding pin facing away from the display area, and the thickness of the protective layer is equal to the protruding height of the bonding pin.

[0018] According to another aspect of the present disclosure, a display device is provided, including: the display panel described in any one of the above.

[0019] In the display panel of the present disclosure, the protective layer at least coats the side surface of the bonding pin. By protecting the side surface of the bonding pin through the protective layer, it is avoided that the metal material with strong metal activity in the bonding pin reacts with the metal material with weak metal activity in the first electrode, and it is avoided that an etching effect is generated on the bonding pin. Therefore, the resistance of the bonding pin will not increase, and the phenomenon of open circuit of part of the metal layer will not occur, ensuring the signal transmission effect; moreover, metal particles will not be deposited on the bonding pin due to the displacement reaction, and the bonding effect between the bonding pin and the flexible circuit board or the flip chip film will not be affected; in addition, metal particles will not be deposited between two adjacent bonding pins, and short circuit between two adjacent bonding pins will not be caused, ensuring the display effect of the display panel.

[0020] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and do not limit the present disclosure. Brief Description of the Drawings

[0021] The drawings herein are incorporated into the specification and constitute a part of this specification, showing embodiments consistent with the present disclosure, and are used together with the specification to explain the principles of the present disclosure. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and those of ordinary skill in the art can obtain other drawings based on these drawings without creative efforts.

[0022] Figure 1 It is a schematic structural diagram of an exemplary embodiment of a display panel of the present disclosure.

[0023] Figure 2 is Figure 1 a schematic structural diagram of an exemplary embodiment of a bonding area in

[0024] Figure 3 is a sectional view taken along the B-B section in accordance with Figure 2 in

[0025] Figure 4 is Figure 1 a schematic structural diagram of another exemplary embodiment of the bonding area in

[0026] Figure 5 is a sectional view taken along the C-C section in accordance with Figure 4 in

[0027] Description of the Reference Numerals:

[0028] 1. Substrate

[0029] 2. Array substrate; 21. Light-shielding layer; 22. Buffer layer; 231. Channel portion; 232. Source electrode; 233. Drain electrode; 24. First gate insulating layer; 25. Gate electrode; 26. Second gate insulating layer; 271. Source connection line; 272. Drain connection line; 273. Bonding pin; 2731. First conductive layer; 2732. Second conductive layer; 2733. Third conductive layer; 274. First gap; 275. Connection lead; 28. Planarization layer;

[0030] 3. Protective layer; 31. Protection portion; 32. Second gap;

[0031] 4. Light-emitting substrate; 41. First electrode; 411. Fourth conductive layer; 412. Fifth conductive layer; 42. Pixel definition layer; 43. Light-emitting layer group; 44. Second electrode;

[0032] 5. Encapsulation layer group; 6. Polarizer; 7. Cover plate;

[0033] BOD, binding region; AA, display region; ZW, bending region. Detailed implementation manners

[0034] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. Like reference numerals in the figures denote like or similar structures, and thus their detailed descriptions will be omitted. In addition, the drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0035] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the directions of the examples described in the accompanying drawings. It can be understood that if the device of the icon is turned upside down, the component described as "upper" will become the component described as "lower". When a structure is "on" another structure, it may mean that a structure is integrally formed on another structure, or that a structure is "directly" disposed on another structure, or that a structure is "indirectly" disposed on another structure through another structure.

[0036] The terms "a", "an", "the", "said" and "at least one" are used to indicate the existence of one or more elements / components / etc.; the terms "comprising" and "having" are used to mean an open inclusion and mean that there may be additional elements / components / etc. in addition to the listed elements / components / etc.; the terms "first", "second", "third", etc. are used only as labels and are not a limitation on the quantity of their objects.

[0037] In this application, unless otherwise clearly defined and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or integrated; it can be directly connected or indirectly connected through an intermediate medium. "And / or" only describes the association relationship of associated objects and means that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this article generally means that the associated objects before and after are in an "or" relationship.

[0038] The example embodiment of the present disclosure provides a display panel. Refer to Figures 1-5As shown, the display panel has a display area AA and a bonding area BOD provided on at least one side of the display area AA. The display panel may include an array substrate 2, a protective layer 3, and a light-emitting substrate 4. The array substrate 2 may include a plurality of switch components arranged in an array, a plurality of bonding pins 273, and a plurality of connection leads 275. The switch components are provided in the display area AA, the bonding pins 273 are provided in the bonding area BOD, and the connection leads 275 are connected between the switch components and the bonding pins 273. A first gap 274 is provided between adjacent two bonding pins 273. The protective layer 3 at least covers the side surfaces of the bonding pins 273. The light-emitting substrate 4 is provided on the side of the array substrate 2 where the protective layer 3 is provided. The light-emitting substrate 4 includes a first electrode 41, and the first electrode 41 is connected to the switch components. The metal activity of at least part of the material of the bonding pins 273 is stronger than that of at least part of the material of the first electrode 41.

[0039] In the present exemplary embodiment, with reference to Figure 1 As shown, the display panel may include a substrate 1. The material of the substrate 1 may include inorganic materials. For example, the inorganic material may be glass, quartz, or metal, etc. The material of the substrate 1 may also include organic materials. For example, the organic material may be resin materials such as polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone, polyethylene terephthalate, and polyethylene naphthalate. The substrate 1 may be formed by multiple material layers. For example, the substrate 1 may include multiple base layers, and the material of the base layer may be any of the above materials. Of course, the substrate 1 may also be set as a single layer and may be any of the above materials.

[0040] A light-shielding layer 21 may also be provided on one side of the substrate 1. The light incident from the substrate 1 into the active layer will generate photo-generated carriers in the active layer, which will then have a great impact on the characteristics of the thin-film transistor and ultimately affect the display image quality of the display device. The light incident from the substrate 1 can be blocked by the light-shielding layer 21, so as to avoid affecting the characteristics of the thin-film transistor and the display image quality of the display device. Depending on the type of the thin-film transistor, the light-shielding layer 21 may be omitted.

[0041] A buffer layer 22 may also be provided on the side of the light-shielding layer 21 facing away from the substrate 1. The buffer layer 22 functions to block moisture and impurity ions in the substrate 1 (especially organic materials), and also functions to increase hydrogen ions for the subsequently formed active layer. The material of the buffer layer 22 is an insulating material, and can insulate and isolate the light-shielding layer from the active layer. The buffer layer 22 may include silicon nitride, silicon oxide, or silicon oxynitride. Depending on the type of the substrate 1 or the process conditions, the buffer layer 22 may be omitted.

[0042] An active layer is provided on a side of the buffer layer 22 facing away from the substrate 1. The active layer may include a channel portion 231 and two conductor portions provided at both ends of the channel portion 231. One of the two conductor portions is a source electrode 232, and the other is a drain electrode 233. The material of the active layer may be polysilicon. However, the present disclosure is not limited thereto. For example, the material of the active layer may be single-crystalline silicon, low-temperature polysilicon, amorphous silicon, or an oxide semiconductor, etc. The oxide semiconductor may include binary compounds (ABx), ternary compounds (ABxCy), and quaternary compounds (ABxCyDz) each containing indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), or magnesium (Mg).

[0043] A first gate insulating layer 24 is provided on a side of the active layer facing away from the substrate 1. The first gate insulating layer 24 may include a silicon compound, a metal oxide, or the like. For example, the first gate insulating layer 24 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, or the like. These may be used alone or in combination with each other. The first gate insulating layer 24 may be a single-layer film or a multi-layer film, and the multi-layer film is formed into a stacked structure of different materials. The first gate insulating layer 24 may be provided only on a side of the gate 25 layer close to the substrate 1. Of course, the first gate insulating layer 24 may also be arranged above the entire surface of the substrate 1. In this case, a plurality of first vias are provided on the first gate insulating layer 24, and the first vias communicate with the source electrode 232 and the drain electrode 233, so that at least a part of the source electrode 232 and the drain electrode 233 is exposed.

[0044] A gate layer is provided on a side of the gate insulating layer facing away from the substrate 1. The gate layer may include a gate 25, a gate line, and a first capacitor electrode plate of a storage capacitor. The gate 25 is disposed opposite to the channel portion 231. For example, a positive projection of the channel portion 231 on the substrate 1 is located within a positive projection of the gate 25 on the substrate 1. The gate 25 is connected to the gate line, or a part of the gate line may be reused as the gate 25.

[0045] The gate layer may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The gate layer may be a single-layer film or a multi-layer film.

[0046] On the side of the 25th gate layer facing away from the substrate 1, a second gate insulating layer 26 is provided. The second gate insulating layer 26 may include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, or zinc oxide, etc. The second gate insulating layer 26 can generally be arranged above the entire surface of the substrate 1. A plurality of second vias are provided on the second gate insulating layer 26, and the second vias communicate with the first vias, so that the second vias finally communicate with the source electrode 232 and the drain electrode 233, causing at least part of the source electrode 232 and the drain electrode 233 to be exposed.

[0047] On the side of the second gate insulating layer 26 facing away from the substrate 1, a conductor layer is provided. The conductor layer may include connection leads 275, a power supply line (Vdd), a data line (Data), a source connection line 271, a drain connection line 272, and a second capacitor plate of a storage capacitor, etc. The source connection line 271 is connected to the source electrode 232 through the first via on the first gate insulating layer 24 and the second via on the second gate insulating layer 26, and the drain connection line 272 is connected to the drain electrode 233 through the first via on the first gate insulating layer 24 and the second via on the second gate insulating layer 26.

[0048] The source connection line 271 or the drain connection line 272 of some thin film transistors is connected to the power supply line (Vdd), and the source connection line 271 or the drain connection line 272 of some thin film transistors is connected to the data line (Data).

[0049] Both the power supply line and the data line are connected to the connection lead 275. The connection lead 275 extends to the bonding area, and the part of the connection lead 275 located in the bonding area is exposed to form a bonding pin 273, which facilitates subsequent bonding of the bonding pin 273 with a flexible circuit board or a flip chip film, etc.

[0050] The gate line also extends towards the bonding area and is transferred to the connection lead 275.

[0051] The conductor layer can be a stacked structure of Ti / Al / Ti; thus, the bonding pin 273 can include a first conductive layer 2731, a second conductive layer 2732, and a third conductive layer 2733 that are sequentially stacked; the third conductive layer 2733 is closer to the light-emitting substrate 4 than the first conductive layer 2731. The metal activity of the second conductive layer 2732 is stronger than that of at least part of the materials of the first electrode 41, and the second conductive layer 2732 will undergo a displacement reaction with the first electrode 41; and the metal activity of the first electrode 41 is stronger than that of the third conductive layer 2733 and the first conductive layer 2731, and the first conductive layer 2731 and the third conductive layer 2733 will not undergo a displacement reaction with the first electrode 41. Specifically, the material of the first conductive layer 2731 can be titanium, the material of the second conductive layer 2732 can be aluminum, and the material of the third conductive layer 2733 can be titanium.

[0052] Of course, in some other exemplary embodiments of the present disclosure, the conductor layer may only include the second conductive layer 2732 and the third conductive layer 2733 arranged in the above-mentioned stack. Therefore, the bonding pin 273 may only include the second conductive layer 2732 and the third conductive layer 2733 arranged in the above-mentioned stack. The conductor layer may also be a stacked structure such as Mo / Al / Mo or Mo / AlGe / Mo, etc. Therefore, the bonding pin 273 may be a stacked structure such as Mo / Al / Mo or Mo / AlGe / Mo, etc. The conductor layer may also be a single-layer structure of aluminum (Al), magnesium (Mg), calcium (Ca), or copper (Cu). Therefore, the bonding pin 273 may be a single-layer structure of aluminum (Al), magnesium (Mg), calcium (Ca), or copper (Cu).

[0053] The channel portion 231, the gate 25, the source 232, and the drain 233 form a thin-film transistor. A switching component may include at least two thin-film transistors and a storage capacitor.

[0054] It should be noted that the thin-film transistor described in this specification is a top-gate thin-film transistor. In other exemplary embodiments of the present disclosure, the thin-film transistor may also be a bottom-gate or double-gate type, and the specific structure thereof will not be elaborated herein. Moreover, in the case of using thin-film transistors with opposite polarities or when the current direction changes during the operation of the circuit, etc., the functions of the "source" and "drain" are sometimes interchanged. Therefore, in this specification, the "source" and "drain" can be interchanged with each other.

[0055] A planarization layer 28 is provided on the side of the conductor layer facing away from the substrate 1. The planarization layer 28 can provide a relatively flat base surface for the subsequently formed light-emitting substrate 4, which is beneficial to the light-emitting effect of the light-emitting substrate 4.

[0056] On one side of the planarization layer 28 facing away from the substrate 1, a first electrode 41 is provided. The first electrode 41 can be an anode (pixel electrode). The first electrode 41 can be set as a stacked film structure, that is, the first electrode 41 can at least include a fourth conductive layer 411 and a fifth conductive layer 412 stacked in sequence. The fourth conductive layer 411 is closer to the array substrate 2 than the fifth conductive layer 412, that is to say, the fifth conductive layer 412 is disposed on the side of the fourth conductive layer 411 facing away from the array substrate 2; the fifth conductive layer 412 is a high work function material layer. The high work function material layer can include indium tin oxide (Indium-Tin-Oxide, ITO), indium zinc oxide (Indium-Zinc-Oxide, IZO), zinc oxide (ZnO), or indium oxide (In2O3). The fourth conductive layer 411 is a reflective material layer. The reflective material layer can include silver (Ag). For example, the first electrode 41 can be set as a multi-layer structure of ITO / Ag. Of course, in some other exemplary embodiments of the present disclosure, the first electrode 41 can be set as a multi-layer structure of ITO / Ag / ITO.

[0057] The formation process of the first electrode 41 is as follows: a fourth conductive material layer, a fifth conductive material layer, and a photoresist layer are sequentially formed on the planarization layer 28. A mask is placed on the side of the photoresist layer facing away from the substrate 1, and the photoresist layer is exposed and developed with the mask as a shield, so that the photoresist layer forms a set pattern. Using the photoresist layer as a mask, the fourth conductive material layer and the fifth conductive material layer are etched to form the first electrode 41. The etching solution can be nitric acid (HNO3), and nitric acid reacts with silver (Ag) to generate silver nitrate.

[0058] The inventors found that the reason for the easy occurrence of display defects in the display panel is that: since the metal activity of aluminum (Al) in the bonding pin 273 is stronger than that of silver (Ag) in the first electrode 41, and the bonding pin 273 is exposed, therefore, aluminum (Al) in the bonding pin 273 will displace silver ions in silver nitrate to generate aluminum nitrate and metallic silver, thereby etching the bonding pin 273, increasing the resistance of the bonding pin 273. Moreover, in the case of more serious etching, it will cause the second conductive layer (aluminum) of the bonding pin 273 to be open-circuited, thus affecting the signal transmission effect of the bonding pin 273, resulting in abnormal signals finally input to the switching component, and thus causing display abnormalities; in addition, a part of the displaced metallic silver may be deposited on the bonding pin 273, forming a protrusion on the bonding pin 273, resulting in loose bonding after the bonding pin 273 is bonded to a flexible circuit board or a flip chip film, etc., and it is easy to have a problem of bonding failure; further, a part of the displaced metallic silver may also be deposited between two adjacent bonding pins 273, resulting in a short circuit between two adjacent bonding pins 273, resulting in abnormal signals finally input to the switching component, and thus causing display abnormalities.

[0059] In the present exemplary embodiment, the display panel includes a protective layer 3, and the protective layer 3 at least covers the side surface of the bonding pin 273. By means of the protective layer 3, the side surface of the bonding pin 273 is protected, preventing a displacement reaction from occurring between the metal material with strong metal activity in the bonding pin 273 and the metal material with weak metal activity in the first electrode 41, and avoiding an etching effect on the bonding pin 273. Therefore, the resistance of the bonding pin 273 will not increase, nor will there be a phenomenon of open circuit in some metal layers, ensuring the signal transmission effect and thus ensuring the display effect. Moreover, metal particles will not be deposited on the bonding pin 273 due to the displacement reaction, which will not affect the bonding effect between the bonding pin 273 and the flexible circuit board or the chip-on-film. In addition, metal particles will not be deposited between two adjacent bonding pins 273, preventing a short circuit between two adjacent bonding pins 273 and ensuring the display effect of the display panel, thereby ensuring the display effect.

[0060] It should be noted that the side surface of the bonding pin 273 is the surface perpendicular to the substrate 1 of the bonding pin 273. For example, when the bonding pin 273 is set to be rectangular, the side surface of the bonding pin 273 is the side facing away from the display area, as well as the two side surfaces connected to the side facing away from the display area of the bonding pin 273.

[0061] In the present exemplary embodiment, referring to Figure 2 and Figure 3 as shown, Figure 2 in [the figure], since both the bonding pin 273 and the connection lead 275 are blocked, they are represented by dashed lines. The material of the protective layer 3 is a conductive material. For example, the material of the protective layer 3 can be graphite conductive adhesive, which is a conductive adhesive prepared by using graphite as a conductive additive.

[0062] The metal activity of the material of the first electrode 41 is stronger than that of the protective layer 3. Graphite conductive adhesive does not belong to a metal and will not undergo a displacement reaction with the metal material of the first electrode 41, and will not cause a series of technical problems resulting from the displacement reaction.

[0063] Graphite conductive adhesive has the advantages of high bonding strength, good conductivity, low resistance, excellent aging resistance, good temperature resistance, low cost, and easy implementation. The protective layer 3 made of a conductive material can increase the cross-sectional area of the bonding pin 273, thereby reducing the resistance of the bonding pin 273. Moreover, the good conductivity and low resistance of graphite conductive adhesive can further reduce the resistance of the bonding pin 273, thereby reducing energy consumption.

[0064] The melting point of the protective layer 3 is greater than or equal to 1000°C, while the melting point of the cured graphite conductive adhesive can reach 3652°C to 3697°C. When the second electrode 44 is formed by subsequent high-temperature evaporation coating, the protective layer 3 will not melt, but the second conductive layer 2732 (aluminum) will melt. The protective layer 3 forms a cofferdam to confine the molten second conductive layer 2732 (aluminum) within the cofferdam, preventing the flow of the molten second conductive layer 2732 (aluminum), thereby reducing the risk of short circuit between two adjacent bonding pins 273.

[0065] Moreover, the performance of the graphite conductive adhesive is stable and it will not react with other substances even at high temperatures.

[0066] In addition, the material of the protective layer 3 can also be gold (Au) or platinum (Pt), etc. The melting point of gold (Au) is 1064.43°C and the melting point of platinum (Pt) is 1772°C. Both can form a cofferdam when the second electrode 44 is formed by high-temperature evaporation coating; moreover, gold (Au) and platinum (Pt) also have the advantages of good electrical conductivity, low resistance, and stable performance. In addition, the metal activity of the material of the first electrode 41 is stronger than that of gold (Au) and platinum (Pt). Therefore, gold (Au) and platinum (Pt) will not undergo a displacement reaction with the metal material of the first electrode 41, and a series of technical problems caused by the displacement reaction will not occur. Of course, the protective layer 3 can also be other conductive materials, which will not be elaborated one by one here.

[0067] In this case, the protective layer 3 includes a plurality of protection parts 31, and a second gap 32 is provided between two adjacent protection parts 31, that is, two adjacent protection parts 31 are separately arranged and not connected; thus, short circuit between two adjacent bonding pins 273 is avoided. The protection parts 31 are arranged in one-to-one correspondence with the bonding pins 273, and the orthographic projection of the protection part 31 on the array substrate 2 covers and is larger than the bonding pin 273, that is, one protection part 31 completely covers one bonding pin 273, preventing the bonding pin 273 from being exposed, thereby avoiding the displacement reaction between some materials in the bonding pin 273 and some materials in the first electrode 41 when etching the first electrode 41, and thus avoiding the above series of technical problems. Moreover, one protection part 31 completely covers one bonding pin 273, thereby increasing the bonding area of the bonding pin 273, making it not easy for the bonding pin 273 to fail to bond with a flexible circuit board or a flip chip film, etc.

[0068] Of course, the protective layer 3 made of a conductive material can also be provided only on the side of the bonding pin 273.

[0069] In some further exemplary embodiments of the present disclosure, refer to Figure 4 and Figure 5 as shown in Figure 4Since the connection lead 275 is blocked by this, it is represented by a dashed line. The material of the protective layer 3 can be an insulating material. For example, the material of the protective layer 3 can be insulating inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, etc., or can be organic resin materials such as polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone, polyethylene terephthalate, and polyethylene naphthalate. The insulating material does not belong to a metal and will not undergo a displacement reaction with the metal material of the first electrode 41, and will not generate a series of technical problems caused by the displacement reaction.

[0070] Since it is necessary to ensure the electrical conductivity of the bonding pin 273, the protective layer 3 made of an insulating material cannot cover the side of the bonding pin 273 facing away from the substrate 1, but only covers the exposed side of the bonding pin 273. Specifically, a first gap 274 is provided between two adjacent bonding pins 273, and the protective layer 3 is at least provided in the first gap 274 and on the side of the bonding pin 273 facing away from the display area. The thickness of the protective layer 3 is equal to the protruding height of the bonding pin 273, so that the protective layer 3 completely covers the side of the bonding pin 273 without being exposed.

[0071] It should be noted that the thickness of the protective layer 3 is not exactly equal to the protruding height of the bonding pin 273, but there is a certain error. Depending on the equipment and the manufacturing process, the error range is also different. Therefore, within the error range of the equipment and the manufacturing process, it is considered to be equal.

[0072] A pixel definition layer 42 is provided on the side of the first electrode 41 facing away from the substrate 1. An opening is provided on the pixel definition layer 42 to expose the first electrode 41. The pixel definition layer 42 can include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, hafnium oxide, aluminum oxide, titanium oxide, tantalum oxide, or zinc oxide, or can include organic insulating materials such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB). The pixel definition layer 42 can be a single-layer film or a multi-layer film, and the multi-layer film is formed as a stack of different materials.

[0073] A light-emitting layer group 43 is provided on the side of the pixel definition layer 42 facing away from the substrate 1. At least a part of the light-emitting layer group 43 is located in the opening on the first electrode 41, and the light-emitting layer group 43 is in contact connection with the first electrode 41.

[0074] The light-emitting layer group 43 may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer that are sequentially stacked. The hole injection layer is in contact with the first electrode 41, and the electron injection layer is in contact with the second electrode 44. Of course, in other exemplary embodiments of the present disclosure, the light-emitting layer group 43 may only include a hole transport layer, a light-emitting layer, and an electron transport layer. The light-emitting layer group 43 may also have other structures, and its specific structure may be set as needed.

[0075] A second electrode 44 is provided on a side of the light-emitting layer group 43 facing away from the substrate 1. The second electrode 44 may be a cathode (common electrode), and the second electrode 44 is connected to the ground wire VSS. The second electrode 44 may be disposed in the non-light-emitting region and the light-emitting region of the pixel. That is, the second electrode 44 may be disposed above the entire surface of a plurality of pixels. The second electrode 44 may include a low work function material layer containing Li, Ca, LiF / Ca, LiF / Al, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF2, Ba, its compounds, or its mixtures (for example, a mixture of Ag and Mg). The second electrode 44 may further include a transparent metal oxide layer disposed on the low work function material layer.

[0076] An encapsulation layer group 5 is provided on a side of the second electrode 44 facing away from the substrate 1. The encapsulation layer group 5 may be provided as multiple layers. The encapsulation layer group 5 may include an organic layer and an inorganic layer. Specifically, the encapsulation layer group 5 may include a first inorganic layer, an organic layer disposed on a side of the first inorganic layer facing away from the substrate 1, and a second inorganic layer disposed on a side of the organic layer facing away from the substrate 1. The materials of the first inorganic layer, the organic layer, and the second inorganic layer will not be elaborated here. Of course, the encapsulation layer group 5 may also include more layers or fewer layers.

[0077] In addition, in some other exemplary embodiments of the present disclosure, a touch layer group may further be provided on a side of the encapsulation layer group 5 facing away from the substrate 1, and the touch function of the display device can be realized through the touch layer group.

[0078] In the present exemplary embodiment, a polarizer 6 is provided on the display surface of the display panel. By means of the polarizer 6, the reflection of the display panel to ambient light can be reduced, and the display device can also clearly display under high-brightness ambient light.

[0079] In the present exemplary embodiment, an adhesive layer is provided on a side of the polarizer 6 facing away from the display panel. The material of the adhesive layer is OCA (Optically Clear Adhesive) optical glue. OCA optical glue is a special adhesive for bonding transparent optical elements (such as lenses, etc.). It has the characteristics of being colorless and transparent, having a light transmittance of more than 95%, good bonding strength, being curable at room temperature or medium temperature, and having small curing shrinkage.

[0080] A transparent cover plate 7 is provided on the side of the adhesive layer facing away from the display panel, that is, the transparent cover plate 7 is adhered to the polarizer 6 through the adhesive layer. The transparent cover plate 7 can protect the display device.

[0081] Based on the same inventive concept, the exemplary embodiments of the present disclosure provide a display device, which may include the display panel described in any one of the above. The specific structure of the display panel has been described in detail above, and therefore, it will not be elaborated here.

[0082] The specific type of the display device is not particularly limited, and any common display device types in the art can be used, such as mobile devices like mobile phones, wearable devices like watches, VR devices, etc. Those skilled in the art can make corresponding selections according to the specific use of the display device, and will not be elaborated here.

[0083] It should be noted that in addition to the display panel, the display device further includes other necessary components and compositions. Taking a display as an example, specifically, such as a housing, a circuit board, a power cord, etc. Those skilled in the art can make corresponding supplements according to the specific use requirements of the display device, and will not be elaborated here.

[0084] Compared with the prior art, the beneficial effects of the display device provided by the exemplary embodiments of the present invention are the same as those of the display panel provided by the above exemplary embodiments, and will not be elaborated here.

[0085] After considering the specification and practicing the invention disclosed herein, those skilled in the art will readily conceive of other embodiments of the present disclosure. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include known common knowledge or conventional technical means in the technical field not disclosed by the present disclosure. The specification and examples are only to be considered as exemplary, and the true scope and spirit of the present disclosure are pointed out by the appended claims.

Claims

1. A display panel having a display area and a bonding area provided on at least one side of the display area, characterized in that, The display panel includes: An array substrate, including a plurality of switch components arranged in an array, a plurality of bonding pins, and a plurality of connection leads. The switch components are disposed in the display area, the bonding pins are disposed in the bonding area, the connection leads are connected between the switch components and the bonding pins, and a first gap is provided between two adjacent bonding pins; A protective layer, at least covering the side surface of the bonding pins; A light-emitting substrate, disposed on the side of the array substrate where the protective layer is provided. The light-emitting substrate includes a first electrode, the first electrode is connected to the switch components, and the metal activity of at least part of the material of the bonding pins is stronger than that of at least part of the material of the first electrode; the metal activity of the material of the first electrode is stronger than that of the protective layer, so as to prevent the metal material with strong metal activity in the bonding pins from reacting with the metal material with weak metal activity in the first electrode, and to prevent the protective layer from reacting with the first electrode.

2. The display panel according to claim 1, wherein The material of the protective layer is a conductive material.

3. The display panel according to claim 2, wherein The protective layer includes a plurality of protection parts, a second gap is provided between two adjacent protection parts, the protection parts are correspondingly arranged with the bonding pins, and the orthographic projection of the protection parts on the array substrate covers and is larger than the bonding pins.

4. The display panel according to any one of claims 2 to 3, characterized in that, The material of the protective layer is graphite conductive glue.

5. The display panel according to claim 1, wherein The melting point of the protective layer is greater than or equal to 1000 °C.

6. The display panel according to claim 1, wherein The bonding pins at least include a second conductive layer and a third conductive layer arranged in a stacked manner. The third conductive layer is closer to the light-emitting substrate than the second conductive layer. The metal activity of the second conductive layer is stronger than that of at least part of the material of the first electrode, and the metal activity of the first electrode is stronger than that of the third conductive layer.

7. The display panel according to claim 6, wherein The first electrode at least includes a fourth conductive layer and a fifth conductive layer arranged in a stacked manner. The fourth conductive layer is closer to the array substrate than the fifth conductive layer. The metal activity of the second conductive layer is stronger than that of the fourth conductive layer, and the material of the fifth conductive layer is a conductive oxide.

8. The display panel according to claim 1, wherein The bonding pins are set as a protruding structure, the material of the protective layer is an insulating material, the protective layer is at least disposed in the first gap and on the side surface of the bonding pins facing away from the display area, and the thickness of the protective layer is equal to the protruding height of the bonding pins.

9. A display device, characterized in that, Including: The display panel according to any one of claims 1 to 8.

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