Pixel array substrate

Abstract

A pixel array substrate comprises a pixel driving circuit, a first insulating layer, a pad group and an adjustment structure. The first insulating layer is arranged on the pixel driving circuit. The pad group is electrically connected to the pixel driving circuit. The adjustment structure is arranged on the first insulating layer and electrically connected to the pad group. The adjustment structure is located between the pad group and the pixel driving circuit. The adjustment structure comprises a first adjustment part and a second adjustment part. At least a part of the first adjustment part overlaps the pad group. The second adjustment part is arranged outside the first adjustment part and staggered with the pad group. The absorption rate of the first adjustment part to laser is higher than the absorption rate of the second adjustment part to laser.

Description

Technical Field

[0001] The invention relates to a pixel array substrate. Background Art

[0002] With the development of display technology, high-resolution and thin display devices are favored by the mainstream market. In recent years, due to the breakthrough in the process technology of light-emitting diode (LED) components, micro-LED display devices (Micro-LED display) or millimeter-level LED display devices that can arrange LED components in an array have been developed. They do not require a liquid crystal layer (Liquid crystal) and a color filter (Color filter), which can further reduce the thickness of the display device. In addition, compared with organic light-emitting diode display devices, micro-LED display devices have the advantages of more power saving and longer life.

[0003] In the current production process of micro-LED display devices, a large number of LED elements need to be transferred to the pixel array substrate through mass transfer. However, today's display devices usually have millions of pixels, and the LED elements are small in size and difficult to accurately align with the pads of the pixel array substrate. It is easy for the LED elements to be unable to be accurately placed at the predetermined position due to alignment errors, which in turn causes the LED elements to be unable to be driven normally. In particular, when the LED elements and the pads of the pixel array substrate are joined by a laser welding process, the heat energy generated by the laser irradiation will cause the thermal expansion of the pixel array substrate, making the joining of the LED elements and the pixel array substrate more difficult. Summary of the invention

[0004] The invention provides a pixel array substrate, which can improve the bonding yield with light emitting diode elements.

[0005] The pixel array substrate of the present invention comprises a substrate, a pixel driving circuit, a first insulating layer, a pad group and an adjustment structure. The pixel driving circuit is arranged on the substrate. The first insulating layer is arranged on the pixel driving circuit. The pad group is electrically connected to the pixel driving circuit. The adjustment structure is arranged on the first insulating layer and electrically connected to the pad group. The adjustment structure is located between the pad group and the pixel driving circuit. The adjustment structure comprises a first adjustment part and a second adjustment part. At least a part of the first adjustment part overlaps the pad group. The second adjustment part is arranged outside the first adjustment part and staggered with the pad group. The absorption rate of the first adjustment part to the laser is higher than the absorption rate of the second adjustment part to the laser.

[0006] In one embodiment of the present invention, the first adjustment portion has a first absorption region, which overlaps the pad group, has an area greater than that of the pad group, and a vertical projection of the pad group on the substrate is within a vertical projection of the first absorption region on the substrate.

[0007] In one embodiment of the present invention, the first adjusting portion further comprises a second absorption zone, the second absorption zone is located around the first absorption zone and has a distance from the first absorption zone, and the first absorption zone is connected to the second absorption zone.

[0008] In one embodiment of the present invention, the pixel array substrate further includes a second insulating layer. The adjustment structure is located between the second insulating layer and the first insulating layer. The first adjustment portion has a first metal layer in contact with the second insulating layer. The first adjustment portion has a first portion of the second metal layer and the second adjustment portion has a second portion of the second metal layer. The first metal layer of the first adjustment portion is located between the second insulating layer and the first portion of the second metal layer. The second portion of the second metal layer of the second adjustment portion contacts the second insulating layer. The absorption rate of the first metal layer to the laser is higher than the absorption rate of the second metal layer to the laser.

[0009] In one embodiment of the present invention, the first adjustment portion further comprises a first portion of a third metal layer and the second adjustment portion further comprises a second portion of a third metal layer, and the first portion of the third metal layer of the first adjustment portion, the first portion of the second metal layer of the first adjustment portion, and the first metal layer of the first adjustment portion are stacked in sequence along a direction away from the substrate. The second portion of the third metal layer of the second adjustment portion and the second portion of the second metal layer of the second adjustment portion are stacked in sequence along a direction away from the substrate.

[0010] In one embodiment of the present invention, the pixel array substrate further includes a second insulating layer. The adjustment structure is located between the second insulating layer and the first insulating layer. The first adjustment portion has a first metal layer in contact with the second insulating layer. The second adjustment portion has a metal oxide layer in contact with the second insulating layer. The absorption rate of the first metal layer to the laser is higher than the absorption rate of the metal oxide layer to the laser.

[0011] In one embodiment of the present invention, the above-mentioned first adjustment part further has a first part of the second metal layer and the second adjustment part further has a second part of the second metal layer, the first metal layer of the first adjustment part is located between the second insulating layer and the first part of the second metal layer of the first adjustment part, and the metal oxide layer of the second adjustment part is located between the second insulating layer and the second part of the second metal layer of the second adjustment part.

[0012] In one embodiment of the present invention, the first adjustment portion further comprises a first portion of a third metal layer and the second adjustment portion further comprises a second portion of a third metal layer. The first portion of the third metal layer of the first adjustment portion, the first portion of the second metal layer of the first adjustment portion, and the first metal layer of the first adjustment portion are stacked in sequence along a direction away from the substrate. The second portion of the third metal layer of the second adjustment portion, the second portion of the second metal layer of the second adjustment portion, and the metal oxide layer of the second adjustment portion are stacked in sequence along a direction away from the substrate.

[0013] In one embodiment of the present invention, the wavelength range of the laser light includes 915 nm to 1064 nm. The material of the first metal layer is selected from titanium, tin or nickel. The material of the second metal layer is selected from aluminum, silver or copper.

[0014] In one embodiment of the present invention, the wavelength range of the laser light is 400 nm to 550 nm. The material of the first metal layer is selected from titanium, copper, tin or nickel. The material of the second metal layer is selected from silver. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 FIG. 1 is a top view of a pixel array substrate 10 according to an embodiment of the present invention.

[0016] Figure 2 FIG. 1 is a cross-sectional schematic diagram of a pixel array substrate 10 according to an embodiment of the present invention.

[0017] Figure 3 FIG. 1 is an enlarged schematic diagram of a partial cross section of a pixel array substrate 10 according to an embodiment of the present invention.

[0018] Figure 4 FIG. 1 is a schematic enlarged diagram of another partial cross section of the pixel array substrate 10 according to an embodiment of the present invention.

[0019] Figure 5 The absorption spectra of the first stacked structure Sa and the second stacked structure Sr according to an embodiment of the present invention disposed on a glass are shown.

[0020] Figure 6 The absorption spectra of various materials are shown.

[0021] Figure 7 FIG. 1 is a cross-sectional schematic diagram of a pixel array substrate 10A according to another embodiment of the present invention.

[0022] Figure 8 FIG. 1 is an enlarged schematic diagram of a partial cross section of a pixel array substrate 10A according to another embodiment of the present invention.

[0023] The reference numerals are described as follows:

[0024] 10. 10A: Pixel array substrate

[0025] 10a, 10r: Region

[0026] 110: Base

[0027] 120: Buffer layer

[0028] 130: Semiconductor pattern

[0029] 140: Gate insulation layer

[0030] 140a, 140b, 160a, 160b, 180a, 190a, 210a, 220a, 260a, 260b: contact window

[0031] 150: Control terminal

[0032] 160: Interlayer dielectric layer

[0033] 171: First End

[0034] 172: Second End

[0035] 180, 250: Flat layer

[0036] 190: First protective layer

[0037] 200: Conductive pattern

[0038] 210: First insulation layer

[0039] 220: Second protection layer

[0040] 231: The third metal layer

[0041] 231-1, 232-1: Part 1

[0042] 231-2, 232-2: Part 2

[0043] 232: Second metal layer

[0044] 233: First metal layer

[0045] 240: Second insulation layer

[0046] 260: The third protection layer

[0047] 270: Pad set

[0048] 271: First pad

[0049] 272: Second pad

[0050] 280: Metal oxide layer

[0051] g: Spacing

[0052] M4: Adjustment structure

[0053] M4a: First adjustment unit

[0054] M4a-1: First absorption zone

[0055] M4a-2: Second absorption zone

[0056] M4r, M4rA: Second adjustment unit

[0057] PC: Pixel driver circuit

[0058] R1, R2, R3: Local

[0059] Sa: First stack

[0060] Sr, SrA: Second stacking

[0061] T: Thin Film Transistor

[0062] z: direction

[0063] I-I': section line DETAILED DESCRIPTION

[0064] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0065] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements. As used herein, "connection" may refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may refer to the presence of other elements between two elements.

[0066] As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable deviation range of the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately", or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property or other property, and can apply to all properties without a single standard deviation.

[0067] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless explicitly defined as such herein.

[0068] Figure 1 FIG. 1 is a top view of a pixel array substrate 10 according to an embodiment of the present invention. Figure 2 FIG. 1 is a cross-sectional schematic diagram of a pixel array substrate 10 according to an embodiment of the present invention. Figure 2 correspond Figure 1 Section line I-I'. Figure 1 The pad set 270 , the conductive pattern 200 and the adjustment structure M4 are depicted, while other components of the pixel array substrate 10 are omitted.

[0069] Please refer to Figure 1 and Figure 2 The pixel array substrate 10 includes a substrate 110. For example, in this embodiment, the substrate 110 may be made of glass, quartz, organic polymer, or opaque / reflective material (eg, wafer, ceramic, etc.), or other applicable materials.

[0070] The pixel array substrate 10 further includes a pixel driving circuit PC disposed on the substrate 110. For example, in the present embodiment, the pixel driving circuit PC may include a thin film transistor T. The thin film transistor T includes a semiconductor pattern 130, a gate insulating layer 140, a control terminal 150, a first terminal 171, and a second terminal 172, wherein the gate insulating layer 140 is disposed between the control terminal 150 and the semiconductor pattern 130, and the first terminal 171 and the second terminal 172 are electrically connected to two different regions of the semiconductor pattern 130, respectively.

[0071] In the present embodiment, the pixel array substrate 10 may further selectively include a buffer layer 120 disposed on the substrate 110. In the present embodiment, the semiconductor pattern 130 of the thin film transistor T is disposed on the buffer layer 120. The gate insulating layer 140 is disposed on the semiconductor pattern 130 of the thin film transistor T and the buffer layer 120. The control terminal 150 of the thin film transistor T is disposed on the gate insulating layer 140. The pixel array substrate 10 further includes an interlayer dielectric layer 160 disposed on the control terminal 150 and the gate insulating layer 140. The first terminal 171 of the thin film transistor T is disposed on the interlayer dielectric layer 160 and is electrically connected to the semiconductor pattern 130 through a contact window 160a of the interlayer dielectric layer 160 and a contact window 140a of the gate insulating layer 140. The second terminal 172 of the thin film transistor T is disposed on the interlayer dielectric layer 160 and is electrically connected to the semiconductor pattern 130 through another contact window 160b of the interlayer dielectric layer 160 and another contact window 140b of the gate insulating layer 140. However, the present invention is not limited thereto, and in other embodiments, the thin film transistor T may also have other structures.

[0072] In the present embodiment, the pixel array substrate 10 may further include a planar layer 180 disposed on the first end 171 and the second end 172 of the thin film transistor T. The pixel array substrate 10 may further include a first protective layer 190 disposed on the planar layer 180. The planar layer 180 may have a contact window 180a overlapping the first end 171 of the thin film transistor T. The first protective layer 190 may have a contact window 190a overlapping the contact window 180a of the planar layer 180. In the present embodiment, the pixel array substrate 10 may further include a conductive pattern 200 disposed on the first protective layer 190 and electrically connected to the first end 171 of the thin film transistor T through the contact window 190a of the first protective layer 190.

[0073] The pixel array substrate 10 further includes a first insulating layer 210 disposed on the pixel driving circuit PC. For example, in this embodiment, the first insulating layer 210 may be disposed on the conductive pattern 200 and the first protective layer 190, but the present invention is not limited thereto.

[0074] The pixel array substrate 10 further includes an adjustment structure M4 disposed on the first insulating layer 210. For example, in this embodiment, the pixel array substrate 10 may further include a second protective layer 220 disposed on the first insulating layer 210, and the adjustment structure M4 may be disposed on the second protective layer 220, but the present invention is not limited thereto.

[0075] The pixel array substrate 10 further includes a pad group 270 electrically connected to the pixel driving circuit PC. The adjustment structure M4 is electrically connected to the pad group 270. The adjustment structure M4 is located between the pad group 270 and the pixel driving circuit PC. For example, in the present embodiment, the pixel array substrate 10 further includes a third protective layer 260 disposed on the adjustment structure M4. The third protective layer 260 may have contact windows 260a and 260b. The pad group 270 is disposed on the third protective layer 260 and is electrically connected to the adjustment structure M4 through the contact window 260a. The pad group 270 may directly contact the adjustment structure M4. The first insulating layer 210 may have a contact window 210a overlapping the conductive pattern 200. The second protective layer 220 may have a contact window 220a overlapping the contact window 210a of the first insulating layer 210. The adjustment structure M4 may be electrically connected to the conductive pattern 200 through the contact window 220a of the second protective layer 220. The pad set 270 may be electrically connected to the pixel driving circuit PC via the adjustment structure M4 and the conductive pattern 200 , but the present invention is not limited thereto.

[0076] The adjustment structure M4 includes a first adjustment portion M4a and a second adjustment portion M4r. At least a portion of the first adjustment portion M4a overlaps the pad group 270. The second adjustment portion M4r is disposed outside the first adjustment portion M4a and is staggered from the pad group 270. The area where the first adjustment portion M4a is located includes an area 10a that requires laser welding. The area where the second adjustment portion M4r is located includes an area 10r that does not require laser welding. It is worth noting that the absorption rate of the first adjustment portion M4a to the laser is higher than the absorption rate of the second adjustment portion M4r to the laser.

[0077] The pad group 270 includes a first pad 271 and a second pad 272 which are separated in structure, and the first pad 271 and the second pad 272 are respectively used to electrically connect with a plurality of electrodes of the light-emitting diode element (not shown). Specifically, in the present embodiment, a plurality of conductive bumps (not shown) are respectively provided on the plurality of electrodes of the light-emitting diode element (not shown), and the first pad 271 and the second pad 272 of the pixel array substrate 10 are respectively used to co-metallize with the plurality of conductive bumps on the plurality of electrodes of the light-emitting diode element in the laser welding process. When the laser welding process is performed, the laser is simultaneously transmitted to the regions 10a and 10r where the first adjustment portion M4a and the second adjustment portion M4r of the adjustment structure M4 are located. Since the absorption rate of the laser by the first adjustment portion M4a overlapping with the pad group 270 is higher than the absorption rate of the laser by the second adjustment portion M4r, the first adjustment portion M4a of the adjustment structure M4 can absorb more heat energy converted from the laser. The more heat energy can be transferred to the pad group 270 through the first adjustment portion M4a, thereby making the pad group 270 well fixed to the light-emitting diode element.

[0078] At the same time, the second adjustment portion M4r distributed in the area 10r where laser welding is not required can reflect more of the laser, so that the heat energy generated by the laser is not easily accumulated in the area 10r where laser welding is not required. Thereby, when the laser welding process is performed, the pixel array substrate 10 is not easily subjected to excessive thermal expansion due to the heat energy generated by the laser. The pixel array substrate 10 with less thermal expansion can be more accurately aligned with the light-emitting diode element, thereby improving the bonding yield of the pixel array substrate 10 and the light-emitting diode element.

[0079] In this embodiment, the first adjustment portion M4a of the adjustment structure M4 has a first absorption area M4a-1 (indicated at Figure 1 ), the first absorption region M4a-1 overlaps with the pad group 270, the area of ​​the first absorption region M4a-1 is larger than the area of ​​the pad group 270, and the vertical projection of the pad group 270 on the substrate 110 is located within the vertical projection of the first absorption region M4a-1 on the substrate 110.

[0080] In this embodiment, the first adjustment portion M4a of the adjustment structure M4 may also have a second absorption area M4a-2 (indicated at Figure 1 ), the second absorption region M4a-2 is located around the first absorption region M4a-1 and has a spacing g with the first absorption region M4a-1, and the first absorption region M4a-1 is connected to the second absorption region M4a-2. The second absorption region M4a-2 includes an auxiliary absorption region located around the pad group 270. The second absorption region M4a-2 helps to convert the laser irradiated to the adjacent area of ​​the pad group 270 into thermal energy, and transfers the thermal energy to the first absorption region M4a-1 where the pad group 270 is located through heat conduction, so as to facilitate the bonding of the pad group 270 with the light-emitting diode element.

[0081] Figure 3 FIG. 1 is an enlarged schematic diagram of a partial cross section of a pixel array substrate 10 according to an embodiment of the present invention. Figure 3 correspond Figure 2 , and shows the detailed structures of the first adjustment portion M4a and the second adjustment portion M4r of the adjustment structure M4. Figure 4 FIG. 1 is a schematic enlarged diagram of another partial cross section of the pixel array substrate 10 according to an embodiment of the present invention. Figure 4 correspond Figure 2 , and shows the detailed structure of the first adjustment part M4a of the adjustment structure M4.

[0082] Please refer to Figure 2 , Figure 3 and Figure 4In this embodiment, the pixel array substrate 10 further includes a second insulating layer 240, wherein the adjustment structure M4 is located between the second insulating layer 240 and the first insulating layer 210. In this embodiment, the pixel array substrate 10 further includes a planar layer 250, wherein the planar layer 250 is disposed on the second insulating layer 240, a portion of the third protective layer 260 is disposed on the planar layer 250, and another portion of the third protective layer 260 is disposed on a portion of the adjustment structure M4.

[0083] The first adjustment portion M4a has a first metal layer 233, which contacts the second insulating layer 240. The first adjustment portion M4a has a first portion 232-1 of the second metal layer 232, and the second adjustment portion M4r has a second portion 232-2 of the second metal layer 232. The first metal layer 233 of the first adjustment portion M4a is located between the second insulating layer 240 and the first portion 232-1 of the second metal layer 232. The second portion 232-2 of the second metal layer 232 of the second adjustment portion M4r contacts the second insulating layer 240.

[0084] The absorption rate of the first metal layer 233 to the laser is higher than the absorption rate of the second metal layer 232 to the laser. That is to say, during the laser welding process, the top film layer of the first adjustment part M4a is the first film layer irradiated by the laser in the first adjustment part M4a, and the top film layer of the second adjustment part M4r is the first film layer irradiated by the laser in the second adjustment part M4r, and the absorption rate of the top film layer of the first adjustment part M4a (i.e., the first metal layer 233) to the laser is higher than the absorption rate of the top film layer of the second adjustment part M4r (i.e., the second metal layer 232) to the laser.

[0085] Please refer to Figure 2 , Figure 3 and Figure 4 In the present embodiment, the first adjustment portion M4a further comprises a first portion 231-1 of a third metal layer 231 and the second adjustment portion M4r further comprises a second portion 231-2 of the third metal layer 231, the first portion 231-1 of the third metal layer 231 of the first adjustment portion M4a, the first portion 232-1 of the second metal layer 232 of the first adjustment portion M4a and the first metal layer 233 of the first adjustment portion M4a are stacked sequentially along a direction z away from the substrate 110, and the second portion 231-2 of the third metal layer 231 of the second adjustment portion M4r and the second portion 232-2 of the second metal layer 232 of the second adjustment portion M4r are stacked sequentially along a direction z away from the substrate 110.

[0086] Please refer to Figure 3The first part 231-1 of the third metal layer 231 of the first adjustment part M4a, the first part 232-1 of the second metal layer 232 of the first adjustment part M4a, the first metal layer 233 of the first adjustment part M4a, part of the planarization layer 250 and part of the third protective layer 260 are stacked into a first stack structure Sa; the second part 231-2 of the third metal layer 231 of the second adjustment part M4r, the second part 232-2 of the second metal layer 232 of the second adjustment part M4r, another part of the planarization layer 250 and another part of the third protective layer 260 are stacked into a second stack structure Sr.

[0087] Figure 5 FIG. 2 shows the absorption spectra of the first stacked structure Sa and the second stacked structure Sr of an embodiment of the present invention disposed on a glass. Figure 5 It can be seen from the data that the laser absorption rate of the first stacked structure Sa located in the area 10a that requires laser welding is indeed higher than the laser absorption rate of the second stacked structure Sr located in the area 10r that does not require laser welding.

[0088] Figure 6 Shows the absorption spectra of various materials. Figure 3 , Figure 4 and Figure 6 For example, in the present embodiment, the wavelength range of the laser used in the laser welding process may include 915nm to 1064nm, the material of the topmost film layer of the first adjustment portion M4a (i.e., the first metal layer 233) may be titanium (Ti) having a high laser absorption rate, and the material of the topmost film layer of the second adjustment portion M4r (i.e., the second metal layer 232) may be aluminum (Al) having a low laser absorption rate. However, the present invention is not limited thereto, and in other embodiments, the material of the topmost film layer of the first adjustment portion M4a (i.e., the first metal layer 233) may also be selected from other materials having a high laser absorption rate, such as but not limited to: tin (Sn) or nickel (Ni), and the material of the topmost film layer of the second adjustment portion M4r (i.e., the second metal layer 232) may also be selected from other materials having a low laser absorption rate, such as but not limited to: silver (Ag) or copper (Cu).

[0089] In addition, in this embodiment, the material of the bottom film layer (i.e., the third metal layer 231) of the first adjustment portion M4a and the second adjustment portion M4r can be selectively titanium. However, the present invention is not limited thereto, and in other embodiments, the material of the bottom film layer (i.e., the third metal layer 231) of the first adjustment portion M4a and the second adjustment portion M4r can also be selected from other materials, such as but not limited to: tin (Sn) or nickel (Ni).

[0090] It should be noted that the present invention is not limited to the wavelength range of the laser used in the laser welding process. In other embodiments, the laser used in the laser welding process may also include other wavelength ranges. For example, in another embodiment, the wavelength range of the laser used in the laser welding process may include 400nm~550nm; at this time, the material of the top film layer of the first adjustment part M4a (i.e., the first metal layer 233) and the material of the top film layer of the second adjustment part M4r (i.e., the second metal layer 232) can be appropriately changed; for example, according to Figure 6 According to the absorption spectra of various materials, when the wavelength range of the laser includes 400nm~550nm, the material of the top film layer of the first adjustment part M4a (i.e., the first metal layer 233) can be selected from titanium (Ti), copper (Cu), tin (Sn) or nickel (Ni) with higher absorption rate in the band of 400nm~550nm, and the material of the top film layer of the second adjustment part M4r (i.e., the second metal layer 232) can be selected from silver (Ag) with lower absorption rate in the band of 400nm~550nm.

[0091] It must be noted that the following embodiments use the component numbers and some contents of the previous embodiments, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can refer to the previous embodiments, and the following embodiments will not be repeated.

[0092] Figure 7 FIG. 1 is a cross-sectional schematic diagram of a pixel array substrate 10A according to another embodiment of the present invention. Figure 8 FIG. 1 is an enlarged schematic diagram of a partial cross section of a pixel array substrate 10A according to another embodiment of the present invention. Figure 8 correspond Figure 7 The local R3 of the adjustment structure M4 is shown, and the detailed structure of the first adjustment part M4a and the second adjustment part M4rA are shown.

[0093] The pixel array substrate 10A of this embodiment is similar to the aforementioned pixel array substrate 10, and the difference between the two is that the second adjustment portion M4rA of the pixel array substrate 10 of this embodiment is different from the second adjustment portion M4r of the aforementioned pixel array substrate 10. Figure 7 and Figure 8 Specifically, in this embodiment, the second adjustment portion M4r further includes a metal oxide layer 280 (indicated at Figure 8 ), in contact with the second insulating layer 240. The absorption rate of the first metal layer 233 of the first adjustment portion M4a to the laser is higher than the absorption rate of the metal oxide layer 280 of the second adjustment portion M4rA to the laser. For example, in this embodiment, the material of the metal oxide layer 280 may be indium zinc oxide (Indium-Zinc Oxide, IZO), but the present invention is not limited thereto.

[0094] The second portion 231-2 of the third metal layer 231 of the second adjustment portion M4rA, the second portion 232-2 of the second metal layer 232 of the second adjustment portion M4rA, and the metal oxide layer 280 of the second adjustment portion M4rA are stacked in sequence along a direction z away from the substrate 110. The second portion 231-2 of the third metal layer 231 of the second adjustment portion M4rA, the second portion 232-2 of the second metal layer 232 of the second adjustment portion M4rA, the metal oxide layer 280 of the second adjustment portion M4rA, a portion of the planarization layer 250, and a portion of the third protection layer 260 are stacked into a second stacked structure SrA.

[0095] Figure 5 The absorption spectrum of the second stacked structure SrA of another embodiment of the present invention disposed on a glass is also shown. Figure 5 It can be seen from the data that in the laser wavelength range used in the laser welding process, the laser absorption rate of the first stacked structure Sa located in the area 10a where laser welding is required is indeed higher than the laser absorption rate of the second stacked structure SrA located in the area 10r where laser welding is not required. In addition, compared with Figure 3 The second stack Sr, Figure 8 The second stacked structure SrA can further reduce the absorption rate by disposing the metal oxide layer 280, which helps to further improve the bonding yield of the pixel array substrate 10A and the light emitting diode element.

Claims

1. A pixel array substrate, comprising: a base; a pixel driving circuit, disposed on the substrate; a first insulating layer, disposed on the pixel driving circuit; a pad set electrically connected to the pixel driving circuit; as well as An adjustment structure is disposed on the first insulating layer and electrically connected to the pad set, wherein the adjustment structure is located between the pad set and the pixel driving circuit, and the adjustment structure includes: a first adjusting portion, wherein at least a portion of the first adjusting portion overlaps the pad set; as well as A second adjusting portion is disposed outside the first adjusting portion and staggered with the pad assembly, wherein The absorption rate of the first adjusting portion to a laser is higher than the absorption rate of the second adjusting portion to a laser.

2. The pixel array substrate as described in claim 1, wherein the first adjustment portion has a first absorption region, the first absorption region overlaps the pad group, the area of ​​the first absorption region is larger than the area of ​​the pad group, and a vertical projection of the pad group on the substrate is located within a vertical projection of the first absorption region on the substrate. 3 . The pixel array substrate as claimed in claim 2 , wherein the first adjusting portion further comprises a second absorption region, the second absorption region is located around the first absorption region and has a distance from the first absorption region, and the first absorption region is connected to the second absorption region.

4. The pixel array substrate as claimed in claim 1, further comprising: a second insulating layer, wherein the adjustment structure is located between the second insulating layer and the first insulating layer; The first adjusting portion has a first metal layer in contact with the second insulating layer; The first adjustment portion has a first portion of a second metal layer and the second adjustment portion has a second portion of the second metal layer; The first metal layer of the first adjusting portion is located between the second insulating layer and the first portion of the second metal layer; The second portion of the second metal layer of the second adjusting portion contacts the second insulating layer; The absorption rate of the first metal layer to the laser is higher than the absorption rate of the second metal layer to the laser.

5. The pixel array substrate as described in claim 4, wherein the first adjustment portion further has a first portion of a third metal layer and the second adjustment portion further has a second portion of the third metal layer, the first portion of the third metal layer of the first adjustment portion, the first portion of the second metal layer of the first adjustment portion, and the first metal layer of the first adjustment portion are stacked sequentially along a direction away from the substrate, and the second portion of the third metal layer of the second adjustment portion and the second portion of the second metal layer of the second adjustment portion are stacked sequentially along the direction away from the substrate. 6 . The pixel array substrate as claimed in claim 4 , wherein the wavelength range of the laser includes 915 nm to 1064 nm; the material of the first metal layer is selected from titanium, tin or nickel; and the material of the second metal layer is selected from aluminum, silver or copper. 7 . The pixel array substrate as claimed in claim 4 , wherein the wavelength range of the laser includes 400 nm to 550 nm; the material of the first metal layer is selected from titanium, copper, tin or nickel; and the material of the second metal layer is selected from silver.

8. The pixel array substrate as claimed in claim 1, further comprising: a second insulating layer, wherein the adjustment structure is located between the second insulating layer and the first insulating layer; The first adjusting portion has a first metal layer in contact with the second insulating layer; The second adjusting portion has a metal oxide layer in contact with the second insulating layer; The absorption rate of the first metal layer to the laser is higher than the absorption rate of the metal oxide layer to the laser.

9. The pixel array substrate as described in claim 8, wherein the first adjustment portion further has a first portion of a second metal layer and the second adjustment portion further has a second portion of the second metal layer, the first metal layer of the first adjustment portion is located between the second insulating layer and the first portion of the second metal layer of the first adjustment portion, and the metal oxide layer of the second adjustment portion is located between the second insulating layer and the second portion of the second metal layer of the second adjustment portion.

10. The pixel array substrate as described in claim 9, wherein the first adjustment portion further has a first portion of a third metal layer and the second adjustment portion further has a second portion of the third metal layer, the first portion of the third metal layer of the first adjustment portion, the first portion of the second metal layer of the first adjustment portion, and the first metal layer of the first adjustment portion are stacked sequentially along a direction away from the substrate, and the second portion of the third metal layer of the second adjustment portion, the second portion of the second metal layer of the second adjustment portion, and the metal oxide layer of the second adjustment portion are stacked sequentially along the direction away from the substrate. 11 . The pixel array substrate as claimed in claim 9 , wherein the wavelength range of the laser includes 915 nm to 1064 nm; the material of the first metal layer is selected from titanium, tin or nickel; and the material of the second metal layer is selected from aluminum, silver or copper. 12 . The pixel array substrate as claimed in claim 9 , wherein the wavelength range of the laser includes 400 nm to 550 nm; the material of the first metal layer is selected from titanium, copper, tin or nickel; and the material of the second metal layer is selected from silver.

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