Semiconductor device manufacturing methods, semiconductor manufacturing apparatus and systems

Abstract

One aspect of this disclosure relates to a method for manufacturing a semiconductor device comprising the following steps: a step of coating a liquid material containing an ionic liquid onto a substrate to form a protective film; a step of transporting the substrate with the protective film formed thereon to the atmosphere; and a step of removing the protective film from the substrate transported to the atmosphere.

Description

Technical Field

[0001] This disclosure relates to methods for manufacturing semiconductor devices, semiconductor manufacturing apparatus, and systems. Background Technology

[0002] It is known that an active gas, NF3, reacts with the natural oxide film on the surface of a semiconductor chip to form a protective film, and then the semiconductor chip is heated to sublimate the protective film, thereby removing the natural oxide film in fine recesses, etc. (for example, see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 10-335316 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique for suppressing the formation of a natural oxide film on the surface of a substrate.

[0008] Methods for solving problems

[0009] One aspect of this disclosure relates to a method for manufacturing a semiconductor device comprising the following steps: a step of coating a liquid material containing an ionic liquid onto a substrate to form a protective film; a step of transporting the substrate with the protective film formed thereon to the atmosphere; and a step of removing the protective film from the substrate transported to the atmosphere.

[0010] The effects of the invention

[0011] According to this disclosure, it is possible to suppress the formation of a natural oxide film on the surface of the substrate. Attached Figure Description

[0012] Figure 1 The figure shows an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0013] Figure 2A This is a process cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0014] Figure 2B This is a process cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0015] Figure 2C This is a process cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0016] Figure 2DThis is a process cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0017] Figure 2E This is a process cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0018] Figure 3 A schematic diagram illustrating an example of a vacuum film-forming apparatus.

[0019] Figure 4 A schematic diagram illustrating an example of a rotary coating machine.

[0020] Figure 5 A schematic diagram illustrating an example of a slot coater.

[0021] Figure 6 A schematic diagram illustrating an example of a slot coater.

[0022] Figure 7 A schematic diagram illustrating another example of a slot coater.

[0023] Figure 8 A schematic diagram illustrating an example of a stripping device.

[0024] Figure 9 For illustrative purposes Figure 7 A diagram of the platform of the stripping device.

[0025] Figure 10 For illustrative purposes Figure 7 A diagram of the platform of the stripping device.

[0026] Figure 11 This figure illustrates an example of a method for manufacturing a semiconductor device according to the second embodiment.

[0027] Figure 12 A schematic diagram illustrating an example of a vacuum slot coater.

[0028] Figure 13 This figure illustrates an example of a method for manufacturing a semiconductor device according to the third embodiment.

[0029] Figure 14 This figure illustrates an example of a method for manufacturing a semiconductor device according to the fourth embodiment.

[0030] Figure 15A A process cross-sectional view illustrating an example of a method for embedding Cu into a through-hole formed by a laminated film.

[0031] Figure 15B A process cross-sectional view illustrating an example of a method for embedding Cu into a through-hole formed by a laminated film.

[0032] Figure 15CA process cross-sectional view illustrating an example of a method for embedding Cu into a through-hole formed by a laminated film.

[0033] Figure 15D A process cross-sectional view illustrating an example of a method for embedding Cu into a through-hole formed by a laminated film.

[0034] Figure 15E A process cross-sectional view illustrating an example of a method for embedding Cu into a through-hole formed by a laminated film.

[0035] Figure 15F A process cross-sectional view illustrating an example of a method for embedding Cu into a through-hole formed by a laminated film.

[0036] Figure 16 A schematic diagram showing the slit coating machine of the first modified example.

[0037] Figure 17 A diagram illustrating one example of the operation of the slot coater in the first modified example.

[0038] Figure 18 A diagram illustrating another example of the operation of the slot coater of the first modified example.

[0039] Figure 19 This is a diagram illustrating a mechanism for suppressing contact between ionic liquids and washing liquids.

[0040] Figure 20 This is a diagram illustrating a mechanism for suppressing contact between ionic liquids and washing liquids.

[0041] Figure 21 A schematic diagram showing the slit coating machine of the second modified example.

[0042] Figure 22 This is a circuit diagram used to illustrate the platform grounding circuit.

[0043] Figure 23 A schematic diagram showing the slit coating machine of the third modified example.

[0044] Figure 24 This is a circuit diagram used to illustrate the casing grounding circuit.

[0045] Figure 25 A schematic diagram showing the slit coating machine of the fourth modified example.

[0046] Figure 26 This is a diagram illustrating one example of the operation of the slot coater in the fourth variation.

[0047] Figure 27 This is a diagram illustrating another example of the operation of the slot coater in the fourth variation.

[0048] Figure 28AThis is a diagram illustrating an applicable example of the slot coating machine used to explain the fourth modified example.

[0049] Figure 28B This is a diagram illustrating an applicable example of the slot coating machine used to explain the fourth modified example.

[0050] Figure 28C This is a diagram illustrating an applicable example of the slot coating machine used to explain the fourth modified example.

[0051] Figure 29 A schematic diagram showing the slit coating machine of the fifth modified example.

[0052] Figure 30 A diagram illustrating one example of the operation of the slot coater in the fifth modified example.

[0053] Figure 31 A diagram illustrating one example of the operation of the slot coater in the fifth modified example. Detailed Implementation

[0054] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. Throughout the drawings, the same or corresponding reference numerals are used for the same or corresponding components or parts, and repeated descriptions are omitted.

[0055] [First Embodiment]

[0056] (Semiconductor device manufacturing method)

[0057] Reference Figure 1 An example of the manufacturing method of the semiconductor device according to the first embodiment will be described. Figure 1 The figure shows an example of a method for manufacturing a semiconductor device according to the first embodiment. Figures 2A-2E This is a process cross-sectional view illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment.

[0058] The semiconductor device manufacturing method of the first embodiment includes a vacuum processing step S11, an atmospheric processing step S12, a protective film formation step S13, a protective film removal step S14, and a vacuum processing step S15. The vacuum processing step S11, the protective film removal step S14, and the vacuum processing step S15 are performed in a vacuum, while the atmospheric processing step S12 and the protective film formation step S13 are performed in the atmosphere. Here, "in the atmosphere" means that the process is carried out at approximately one atmosphere of pressure, and the atmosphere in the processing steps can be a rare gas, N2 gas, or other inert gas.

[0059] Vacuum processing step S11 is a process of performing various vacuum treatments on a substrate within a vacuum apparatus. Examples of various vacuum treatments include film formation, etching, chemical oxide removal (COR) treatment, and heat treatment, but are not limited to these. COR treatment includes, for example, supplying a mixture of a gas containing a halogen element and a basic gas to the substrate to modify the oxide and generate reaction products, and then removing the reaction products. In this embodiment, various vacuum treatments include, for example... Figure 2A As shown, a process can be performed to prepare a substrate 10 containing regions 11A and 12A of exposed insulating material by forming insulating film 11 and conductive film 12. Examples of insulating materials include, but are not limited to, low-k films. Examples of conductive materials include, but are not limited to, copper (Cu), ruthenium (Ru), cobalt (Co), polysilicon (Poly-Si), and tungsten (W). The substrate, having undergone various vacuum treatments within the vacuum apparatus, is removed from the vacuum apparatus by a loader and transported to the atmosphere via a conveying device, and then moved into the atmosphere by a loader in the atmosphere apparatus.

[0060] Atmospheric treatment step S12 is a step performed after vacuum treatment step S11, and it involves performing various atmospheric treatments on the substrate within an atmospheric apparatus. Examples of these atmospheric treatments include wet treatment, atmospheric pressure film deposition, and plating, but it is not limited to these. In this embodiment, various atmospheric treatments include, for example... Figure 2B As shown, a wet treatment can be performed by supplying a solution 13 containing hydrogen fluoride (HF) to the substrate 10 in the atmosphere to remove oxides (e.g., native oxide film) from the surface of the substrate 10. Examples of the HF-containing solution 13 include, for example, dilute hydrofluoric acid (DHF), but it is not limited to this. Examples of methods for supplying the HF-containing solution 13 to the substrate 10 include, for example, spin coating and slot coating, but it is not limited to these methods.

[0061] The protective film formation step S13 is performed after the atmospheric treatment step S12. It involves coating a liquid material containing an ionic liquid onto a substrate within an atmospheric treatment apparatus to form a protective film on the substrate surface. The protective film formation step S13 is performed to protect the substrate surface by ensuring a clean surface is not contaminated by impurities such as oxygen (O), water (H2O), or organic matter, and by preventing the formation of a natural oxide film. Therefore, the protective film formation step S13 is preferably performed continuously after the atmospheric treatment step S12. In this embodiment, Figure 1As shown, the protective film forming step S13 is performed continuously after the atmospheric treatment step S12 in the same atmospheric apparatus as the apparatus used for the atmospheric treatment step S12. In this embodiment, in the protective film forming step S13, for example... Figure 2C As shown, through the wet treatment in the atmospheric treatment process S12, a liquid material containing an ionic liquid is coated onto the substrate 10 after the oxide has been removed, forming a protective film 14 on the surface of the substrate 10. Since the surface of the substrate 10 is covered by the protective film 14, it is possible to suppress the adsorption of impurities onto the surface of the substrate 10. Furthermore, the protective film 14 formed by the liquid material containing the ionic liquid has the property of not easily evaporating even when moved from the atmosphere to a vacuum. Therefore, even if the subsequent process is performed in a vacuum, it is possible to suppress the formation of oxides on the surface of the substrate 10 until processing. Examples of methods for coating the liquid material containing the ionic liquid include spin coating and slot coating, but are not limited to these. Details regarding the ionic liquid will be described later. The substrate with the protective film formed in the atmospheric apparatus is removed from the atmospheric apparatus by the atmospheric apparatus loader and transported to the atmosphere by the atmospheric transport device, and then moved into the vacuum apparatus by the vacuum apparatus loader.

[0062] The protective film removal process S14 is performed after the protective film formation process S13. It involves removing the protective film formed on the substrate within a vacuum apparatus, exposing a clean surface. In this embodiment, in the protective film removal process S14... Figure 2D As shown, by heating the substrate 10 in a vacuum, the ionic liquid phase is transformed, reducing the adhesion of the protective film 14 to the substrate (insulating film 11 and conductive film 12). Then, the protective film 14 is removed by physically manipulating the substrate 10, peeling it off from the surface. Examples of such physical maneuvers include horizontal movement, rotation, and tilting of the substrate 10. Furthermore, the ionic liquid phase can be transformed to reduce the adhesiveness of the protective film 14.

[0063] Vacuum processing step S15 is a process performed after the protective film removal step S14, and is a process of performing various vacuum treatments on the substrate within a vacuum apparatus. Examples of various vacuum treatments include film deposition, etching, COR treatment, and heat treatment, but it is not limited to these. Vacuum processing step S15 is preferably performed continuously after the protective film removal step S14, without exposing the substrate to the atmosphere, so that no impurities re-adhere to the clean surface. In this embodiment, vacuum processing step S15 is performed continuously after the protective film removal step S14 within the same vacuum apparatus as the apparatus used to perform the protective film removal step S14. In this embodiment, various vacuum treatments include, for example... Figure 2EAs shown, a film-forming process can be performed to form the insulating film 15. Alternatively, a film-forming process can be performed on a metal film instead of the insulating film 15.

[0064] As explained above, according to the semiconductor device manufacturing method of the first embodiment, a protective film containing an ionic liquid is pre-formed and coated on the surface of a substrate, and the protective film is removed in a vacuum before the film formation process begins. This suppresses the formation of oxides on the substrate surface, allowing the desired film to be formed on a clean surface where oxide formation is suppressed. Consequently, the degradation of interfacial properties (e.g., electrical and mechanical properties) between the substrate surface and the desired film can be suppressed.

[0065] (Vacuum film deposition apparatus)

[0066] Reference Figure 3 An example of a vacuum film-forming apparatus used for film-forming processes in vacuum processing steps S11 and S15 will be described. Figure 3 A schematic diagram illustrating an example of a vacuum film-forming apparatus.

[0067] The vacuum film forming apparatus 100 includes a chamber 110, a gas supply unit 120, an exhaust system 130, and a control unit 190.

[0068] Chamber 110 is formed within a sealed processing space 111 that houses the chip W. A mounting platform 112 is provided inside chamber 110.

[0069] The mounting stage 112 is roughly circular when viewed from above and is fixed to the bottom of the chamber 110. The chip W is mounted on the mounting stage 112 in a roughly horizontal position. A heater 113 is provided inside the mounting stage 112 to heat the mounting stage 112 and the chip W.

[0070] The side wall of chamber 110 is provided with inlet and outlet ports (not shown) for moving the chip W into and out of the processing space 111. The inlet and outlet ports are opened and closed by gate valves (not shown). The top of chamber 110 is provided with spray heads 114 having multiple outlets for discharging processing gases.

[0071] The gas supply unit 120 includes a gas supply source 121 and a gas supply path 122. The gas supply source 121 contains a supply source for various processing gases. The gas supply path 122 connects the gas supply source 121 to the spray head 114. The gas supply path 122 includes, for example, a valve and a flow controller (neither shown). In the gas supply unit 120, various processing gases from the gas supply source 121 are discharged to the processing space 111 via the gas supply path 122 and the spray head 114.

[0072] The exhaust system 130 is connected to an exhaust port 115 located, for example, at the bottom of chamber 110. The exhaust system 130 includes, for example, a pressure control valve and a vacuum pump (neither shown), for venting exhaust from chamber 110.

[0073] The control unit 190 processes instructions that can be executed by a computer, causing the vacuum film deposition apparatus 100 to perform vacuum processing steps S11 and S15. The control unit 190 can be configured to control various elements of the vacuum film deposition apparatus 100 in order to execute vacuum processing steps S11 and S15. The control unit 190 includes, for example, a computer. The computer includes, for example, a CPU (Central Processing Unit), storage, and a communication interface.

[0074] (Coating device)

[0075] Reference Figure 4 A rotary coating machine will be described as an example of a coating apparatus for coating a liquid material containing an ionic liquid in the wet treatment process S12 and the protective film formation process S13. Figure 4 A schematic diagram illustrating an example of a rotary coating machine.

[0076] The rotary coating machine 200 includes a housing 210, a liquid supply unit 220, and a control unit 290.

[0077] A housing 210 forms a sealed processing space 211 that houses the chip W. The housing 210 has an inlet / outlet (not shown) for moving the chip W into and out of the processing space 211. The inlet / outlet is opened and closed by a gate valve (not shown). A mounting platform 212 is provided inside the housing 210. The mounting platform 212 is rotatably connected to the upper end of a rotating shaft 213 extending through the bottom of the housing 210. The chip W is placed on the mounting platform 212 in a substantially horizontal position. A heater 214 for heating the chip W is embedded inside the mounting platform 212.

[0078] The liquid supply unit 220 includes a liquid supply source 221 and a nozzle 222. The liquid supply source 221 contains various liquid materials, such as a liquid solution containing hydrogen fluoride (HF) or a liquid material containing ionic liquids. The nozzle 222 is provided through the top portion of the housing 210 to supply various liquid materials from the liquid supply source 221 to the surface of the chip W placed on the stage 212.

[0079] The control unit 290 processes computer-executable instructions that cause the rotary coater 200 to perform the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing ionic liquid in the protective film formation step S13. The control unit 290 can be configured to control various elements of the rotary coater 200 in a manner that allows the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing ionic liquid in the protective film formation step S13 to be performed. The control unit 290 includes, for example, a computer. The computer includes, for example, a CPU, a memory unit, and a communication interface.

[0080] Reference Figure 5 and Figure 6 A slot coater will be described as an example of a coating apparatus for coating a liquid material containing an ionic liquid in the wet treatment process S12 and the protective film formation process S13. Figure 5 and Figure 6 A schematic diagram illustrating an example of a slot coater. Figure 5 and Figure 6 The images show a side view and a perspective view of the slot coater, respectively.

[0081] The slot coater 300 includes a platform 310, a liquid supply unit 320, and a control unit 390.

[0082] On platform 310, chip W is placed in a roughly horizontal position.

[0083] The liquid supply unit 320 includes a liquid supply source 321 and a slit nozzle 322. The liquid supply source 321 contains various liquid materials, such as a liquid solution containing HF or a liquid material containing ionic liquids. The slit nozzle 322 supplies liquid material from the liquid supply source 321 to the surface of the chip W mounted on the platform 310 by moving the upper part of the chip W in a horizontal direction.

[0084] The control unit 390 processes computer-executable instructions that enable the slot coater 300 to perform the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing ionic liquid in the protective film formation step S13. The control unit 390 can be configured to control various elements of the slot coater 300 in a manner that allows the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing ionic liquid in the protective film formation step S13 to be performed. The control unit 390 includes, for example, a computer. The computer includes, for example, a CPU, a memory unit, and a communication interface.

[0085] Reference Figure 7Another example of a slot coater will be described as a coating apparatus for coating a liquid material containing an ionic liquid in the wet treatment process S12 and the protective film formation process S13. Figure 7 A schematic diagram illustrating another example of a slot coater.

[0086] The slot coater 400 includes a platform 410, a liquid supply unit 420, and a control unit 490.

[0087] On platform 410, chip W is placed in a generally horizontal position. Platform 410 is rotatably configured to be connected to the upper end of rotating shaft 412, which is rotated by drive mechanism 411. A liquid receiving part 413 with an upper side opening is provided around the lower part of platform 410. Liquid receiving part 413 catches liquid materials that slide off or are splashed out from chip W.

[0088] The liquid supply unit 420 includes a liquid supply source 421 and a slit nozzle 422. The liquid supply source 421 contains various liquid materials, such as a liquid solution containing HF or a liquid material containing ionic liquids. The slit nozzle 422 supplies liquid material from the liquid supply source 421 to the surface of the chip W mounted on the platform 410 by moving the upper part of the chip W in a horizontal direction.

[0089] The control unit 490 processes computer-executable instructions that enable the slit coater 400 to perform the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing ionic liquid in the protective film formation step S13. The control unit 490 can be configured to control various elements of the slit coater 400 in a manner that allows the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing ionic liquid in the protective film formation step S13 to be performed. The control unit 490 includes, for example, a computer. The computer includes, for example, a CPU, a memory unit, and a communication interface.

[0090] (Stripping device)

[0091] Reference Figures 8-10 An example of a peeling device used for removing the protective film in the protective film removal process S14 will be described. Figure 8 A schematic diagram illustrating an example of a stripping device. Figure 9 For illustrative purposes Figure 8 The diagram shows the platform of the stripping device, indicating that the chip is placed on the platform and the space between the platform and the chip is filled with temperature-controlled fluid. Figure 10 For illustrative purposes Figure 8 The diagram shows the platform of the stripping device, indicating that there are no chips mounted on the platform and the platform is not filled with temperature-controlled fluid.

[0092] The stripping device 500 includes a chamber 510, a liquid circulation unit 530, an exhaust system 540, and a control unit 590.

[0093] Chamber 510 is formed within a sealed processing space 511 that houses the chip W. A platform 512 is provided inside chamber 510.

[0094] Platform 512 holds the chip W in a generally horizontal position. Platform 512 includes a holding part 512a and a rotating shaft 512b. The rotating shaft 512b is rotatably and vertically supported by an annular support part 514a at the bottom of the reaction tank 514, for example, via a spline-sealed bearing 513. Platform 512 is connected to the rotation drive shaft of motor 515. In addition, platform 512 is vertically supported by a lifting mechanism 516. Control signals for motor 515 and lifting mechanism 516 are output from control unit 590. Platform 512 is surrounded by a bottomed cylindrical reaction tank 514.

[0095] The reaction tank 514 has, for example, a central bottom 514b and a peripheral bottom 514c of different depths arranged in concentric circles, with the central bottom 514b being deeper than the peripheral bottom 514c. Liquid within the reaction tank 514 flows smoothly from the peripheral bottom 514c toward the central bottom 514b. Furthermore, if the liquid flows smoothly, it can be a conical shape or a multi-step structure, for example, with a deeper central section, even if it is not a two-step stepped structure.

[0096] At the central bottom 514b, a discharge port 517 is opened. The discharge port 517 is connected to a return pipe 535 of the liquid circulation section 530. At the side of the reaction tank 514, a liquid supply path 518a is opened. Furthermore, at a lower position than the liquid supply path 518a at the side of the reaction tank 514, a drain path 518b is opened. Furthermore, at a higher position than the liquid supply path 518a at the side of the reaction tank 514, multiple exhaust paths 518c are connected. A heater 519 is embedded at the bottom of the reaction tank 514 to heat the temperature-controlled fluid supplied to the chip W and the reaction tank 514.

[0097] In addition, three lifting pins 520 are provided above the bottom of the reaction tank 514. The lifting pins 520 lift and hold the chip W by inserting through the through holes provided in the platform 512 and protruding relative to the top of the platform 512 when the platform 512 descends.

[0098] Furthermore, a stop portion 521 is provided on the outer edge of the platform 512 to fix the chip W held by the platform 512. The stop portion 521 is, for example... Figure 9 and Figure 10As shown, three chips are evenly spaced along the circumferential direction on the outer edge of the platform 512. The chip W is fixed by the stop 521, thereby preventing the chip W from detaching from the platform 512 when the chip W is rotated.

[0099] The liquid circulation unit 530 includes a tank 531, a temperature control mechanism 532, a supply pipe 533, a sealing mechanism 534, and a return pipe 535.

[0100] Tank 531 stores a temperature-regulating fluid. The temperature-regulating fluid is supplied from tank 531 to the area between the top of platform 512 and the bottom of chip W via supply pipe 533. This adjusts the temperature of chip W to approximately the same temperature as the temperature-regulating fluid. From the viewpoint of excellent thermal conductivity, an ionic liquid is preferred as the temperature-regulating fluid. As the ionic liquid, for example, the same ionic liquid used to form the protective film on the surface of chip W can be used.

[0101] The temperature control mechanism 532 includes a heater and a temperature sensor (neither shown). The temperature control mechanism 532 controls the heater based on the detection value of the temperature sensor, thereby controlling the temperature of the temperature-controlled fluid in the tank 531.

[0102] The supply pipe 533 is coaxially arranged with the rotating shaft 512b of the platform 512, and rotates and rises and falls together with the rotating shaft 512b via a motor 515 and a lifting mechanism 516. The supply pipe 533 is as follows... Figure 10 As shown, the upper end is inserted through the opening 512c provided in the center of the platform 512 to supply temperature-regulating fluid to the platform 512.

[0103] The sealing mechanism 534 can be rotatably supported in a state that airtightly seals the supply pipe 533.

[0104] The return pipe 535 is connected to the discharge port 517 to recover the spilled temperature-regulating fluid from the platform 512 into the tank 531.

[0105] The exhaust system 540 is connected to, for example, multiple exhaust passages 518c. The exhaust system 540 includes, for example, a pressure control valve and a vacuum pump (neither shown) to exhaust air from the chamber 510.

[0106] The control unit 590 processes instructions that can be executed by a computer, causing the peeling apparatus 500 to perform the protective film removal step S14. The control unit 590 can be configured to control various elements of the peeling apparatus 500 in order to perform the protective film removal step S14. The control unit 590 includes, for example, a computer. The computer includes, for example, a CPU, storage, and a communication interface.

[0107] [Second Implementation]

[0108] (Semiconductor device manufacturing method)

[0109] Reference Figure 11 An example of the manufacturing method of the semiconductor device according to the second embodiment will be described. Figure 11 This figure illustrates an example of a method for manufacturing a semiconductor device according to the second embodiment.

[0110] The semiconductor device manufacturing method of the second embodiment includes a vacuum processing step S21, a protective film formation step S22, a protective film removal step S23, and a vacuum processing step S24. The vacuum processing step S21, the protective film formation step S22, the protective film removal step S23, and the vacuum processing step S24 are performed in a vacuum.

[0111] Vacuum processing step S21 is a process in which various vacuum processes are performed on a substrate within a vacuum apparatus. Vacuum processing step S21 may be the same as, for example, vacuum processing step S11 in the first embodiment.

[0112] The protective film formation step S22 is performed after the vacuum processing step S21. It involves coating a liquid material containing an ionic liquid onto a substrate within a vacuum apparatus to form a protective film on the substrate surface. The protective film formation step S22 is performed to protect the substrate surface from contamination by impurities such as oxygen (O), water (H2O), and organic matter, and to prevent the formation of a natural oxide film. Therefore, the protective film formation step S22 is preferably performed continuously after the vacuum processing step S21. In this embodiment, the protective film formation step S22 is performed continuously after the vacuum processing step S21 within the same vacuum apparatus as the apparatus used for the vacuum processing step S21. The protective film formed by the liquid material containing the ionic liquid has the property of not easily evaporating in a vacuum, thus allowing it to be coated in a vacuum. Furthermore, even if the subsequent steps are performed in a vacuum, the formation of oxides on the substrate surface can be suppressed until processing is required. Examples of methods for coating the liquid material containing the ionic liquid include spin coating and slot coating, but these are not limited to these methods. The substrate with a protective film formed inside the vacuum device is removed from the vacuum device and placed into the atmosphere by the loader of the vacuum device. After being transported by the atmosphere through a conveying device, it is moved into other vacuum devices by the loader of other vacuum devices.

[0113] The protective film removal process S23 is performed after the protective film formation process S22. It is a process in which the protective film formed on the substrate is removed in a vacuum apparatus, thereby exposing a clean surface. The protective film removal process S23 can be the same as, for example, the protective film removal process S14 in the first embodiment.

[0114] Vacuum processing step S24 is a process performed after the protective film removal step S23, and is a process in which various vacuum treatments are performed on the substrate in a vacuum apparatus. Vacuum processing step S24 can be the same as, for example, vacuum processing step S15 in the first embodiment.

[0115] As explained above, according to the semiconductor device manufacturing method of the second embodiment, a protective film containing an ionic liquid is pre-formed and coated on the surface of a substrate, and the protective film is removed in a vacuum before the film formation process begins. This suppresses the formation of oxides on the substrate surface, allowing the desired film to be formed on a clean surface where oxide formation is suppressed. Consequently, the degradation of the interfacial properties (e.g., electrical and mechanical properties) between the substrate surface and the desired film can be suppressed.

[0116] (Vacuum coating apparatus)

[0117] Reference Figure 12 A vacuum slot coater will be described as an example of a vacuum coating apparatus used for coating a liquid material containing an ionic liquid in the protective film formation process S22. Figure 12 A schematic diagram illustrating an example of a vacuum slot coater.

[0118] The vacuum slot coater 600 includes a chamber 610, a liquid supply unit 620, a liquid circulation unit 630, and a control unit 690.

[0119] A chamber 610 is formed within a sealed processing space 611 that houses the chip W. A platform 612 is provided inside the chamber 610. The platform 612 holds the chip W in a generally horizontal position. The platform 612 is rotatably connected to the upper end of a rotating shaft 614 that rotates via a drive mechanism 613. A liquid receiving section 615 with an upper side opening is provided around the lower part of the platform 612. The liquid receiving section 615 catches and stores any liquids, such as medicines or liquid materials, that slide off or are ejected from the chip W. The interior of the chamber 610 is vented by an exhaust system (not shown) including a pressure control valve and a vacuum pump.

[0120] The liquid supply unit 620 includes a slit nozzle 621. The slit nozzle 621 supplies liquid material containing ionic liquid from the liquid circulation unit 630 to the surface of the chip W placed on the platform 612 by moving the upper part of the chip W in a horizontal direction.

[0121] The liquid circulation unit 630 recovers the liquid material containing ionic liquid stored in the liquid receiving unit 615 and supplies it to the slit nozzle 621. The liquid circulation unit 630 includes a compressor 631, a raw liquid tank 632, a carrier gas supply source 633, a washing unit 634, and pH sensors 635 and 636.

[0122] Compressor 631 is connected to receiving section 615 via piping 639a, recovering the liquid material containing ionic liquid stored in receiving section 615, for example, by compressing it to above atmospheric pressure. Compressor 631 is connected to raw liquid tank 632 via piping 639b, conveying the liquid material containing ionic liquid, compressed via piping 639b, to raw liquid tank 632. Piping 639a is provided with, for example, a valve and a flow controller (neither shown). For example, by controlling the opening and closing of the valve, the conveying of liquid material containing ionic liquid from compressor 631 to raw liquid tank 632 is carried out periodically.

[0123] The stock solution tank 632 stores a liquid material containing ionic liquid. One end of the stock solution tank 632 is connected to pipes 639b to 639d. The other end of pipe 639b is connected to a compressor 631, through which the stock solution tank 632 is supplied with the liquid material containing ionic liquid, which has been compressed by the compressor 631. The other end of pipe 639c is connected to a carrier gas supply source 633, through which the stock solution tank 632 is supplied with a carrier gas such as nitrogen (N2). The other end of pipe 639d is connected to a slit nozzle 621, through which the liquid material containing ionic liquid in the stock solution tank 632, along with the carrier gas, is transported to the slit nozzle 621. Pipes 639b to 639d are equipped with, for example, valves and flow controllers (not shown).

[0124] The carrier gas supply source 633 is connected to the raw liquid tank 632 via a pipe 639c, and supplies N2 gas and other carrier gases to the raw liquid tank 632 via the pipe 639c.

[0125] A washing unit 634 is disposed in piping 639b. The washing unit 634 washes the liquid material containing ionic liquid conveyed from the compressor 631. The washing unit 634 is connected to a drain pipe 639e, through which the degraded liquid material containing ionic liquid is discharged. For example, the washing unit 634 controls whether to reuse or discharge the liquid material containing ionic liquid based on the detection value of the pH sensor 636. Furthermore, for example, the washing unit 634 may control whether to reuse or discharge the liquid material containing ionic liquid based on the detection value of the pH sensor 635. Additionally, for example, the washing unit 634 may control whether to reuse or discharge the liquid material containing ionic liquid based on the detection values ​​of both the pH sensors 635 and 636.

[0126] pH sensor 635 is disposed in compressor 631 to detect the hydrogen ion index (pH) of the liquid material containing ionic liquid within compressor 631.

[0127] pH sensor 636 is provided in washing unit 634 to detect the hydrogen ion index (pH) of liquid material containing ionic liquid in washing unit 634.

[0128] The control unit 690 processes computer-executable instructions that enable the vacuum slot coater 600 to perform the coating of a liquid material containing an ionic liquid in the protective film formation step S22. The control unit 690 can be configured to control various elements of the vacuum slot coater 600 in order to perform the coating of the liquid material containing an ionic liquid in the protective film formation step S22. The control unit 690 includes, for example, a computer. The computer includes, for example, a CPU, a memory unit, and a communication interface.

[0129] [Third Implementation]

[0130] (Semiconductor device manufacturing method)

[0131] Reference Figure 13 An example of the manufacturing method of the semiconductor device according to the third embodiment will be described. Figure 13 This figure illustrates an example of a method for manufacturing a semiconductor device according to the third embodiment.

[0132] The semiconductor device manufacturing method of the third embodiment includes a vacuum processing step S31, a protective film formation step S32, a protective film removal step S33, and an atmospheric processing step S34. The vacuum processing step S31 and the protective film formation step S32 are performed in a vacuum, while the protective film removal step S33 and the atmospheric processing step S34 are performed in the atmosphere.

[0133] Vacuum processing step S31 is a process in which various vacuum processes are performed on a substrate within a vacuum apparatus. Vacuum processing step S31 may be the same as, for example, vacuum processing step S11 in the first embodiment.

[0134] The protective film formation step S32 is performed after the vacuum processing step S31. It involves coating a substrate with a liquid material containing an ionic liquid within a vacuum apparatus to form a protective film on the substrate surface. In this embodiment, the protective film formation step S32 is performed using a process module that performs the vacuum processing step S31 and a different process module connected via a vacuum transport chamber. The substrate with the protective film formed within the vacuum apparatus is removed from the vacuum apparatus to the atmosphere by a loader within the vacuum apparatus. After being transported by the atmosphere via a transport device, it is then moved back into the atmosphere apparatus by a loader within the atmosphere apparatus.

[0135] The protective film removal step S33 is performed after the protective film formation step S32. It involves removing the protective film formed on the substrate within an atmospheric apparatus, thereby exposing a clean surface. In this embodiment, in the protective film removal step S33, the substrate is heated in the atmosphere, causing an ionic liquid phase transition and reducing the adhesion of the protective film to the substrate (insulating and conductive materials). Then, the protective film on the surface of the substrate is peeled off and removed by physical manipulation of the substrate. Examples of physical manipulation include horizontal movement, rotation, and tilting of the substrate. Furthermore, an ionic liquid phase transition can be performed to reduce the adhesiveness of the protective film.

[0136] Atmospheric treatment step S34 is a step performed after protective film removal step S33, and is a step in which various atmospheric treatments are performed on the substrate within an atmospheric apparatus. Examples of various atmospheric treatments include wet treatment, atmospheric pressure film formation treatment, and plating treatment, but it is not limited to these. Atmospheric treatment step S34 is preferably performed simultaneously with or continuously after protective film removal step S33, in a manner that ensures no re-adhesion of impurities on the clean surface.

[0137] As explained above, according to the semiconductor device manufacturing method of the third embodiment, a protective film containing an ionic liquid is pre-formed and coated on the surface of a substrate, and the protective film is removed in a vacuum before the film formation process begins. This suppresses the formation of oxides on the substrate surface, allowing the desired film to be formed on a clean surface where oxide formation is suppressed. Consequently, the degradation of interfacial properties (e.g., electrical and mechanical properties) between the substrate surface and the desired film can be suppressed.

[0138] [Fourth Implementation]

[0139] (Semiconductor device manufacturing method)

[0140] Reference Figure 14 An example of the manufacturing method of the semiconductor device according to the fourth embodiment will be described. Figure 14 This figure illustrates an example of a method for manufacturing a semiconductor device according to the fourth embodiment.

[0141] The semiconductor device manufacturing method of the fourth embodiment includes a vacuum processing step S41, a protective film formation step S42, a protective film removal step S43, and an atmospheric processing step S44. The vacuum processing step S41 and the protective film formation step S42 are performed in a vacuum, while the protective film removal step S43 and the atmospheric processing step S44 are performed in the atmosphere.

[0142] Vacuum processing step S41 is a process of performing various vacuum treatments on a substrate within a vacuum apparatus. Vacuum processing step S41 may be the same as, for example, vacuum processing step S11 in the first embodiment.

[0143] The protective film formation step S42 is performed after the vacuum processing step S41. It involves coating a liquid material containing an ionic liquid onto a substrate within a vacuum apparatus to form a protective film on the substrate surface. In this embodiment, the protective film formation step S42 is performed by a process module that performs the vacuum processing step S41 and a different process module connected by an interlock chamber (buffer). The interlock chamber is configured to switch between a vacuum atmosphere and an atmospheric atmosphere. The substrate with the protective film formed within the vacuum apparatus is removed from the vacuum apparatus to the atmosphere by a loader in the vacuum apparatus, transported by the atmosphere via a conveying device, and then moved into the atmosphere apparatus by a loader in the atmosphere apparatus.

[0144] The protective film removal process S43 is performed after the protective film formation process S42. It is a process in which the protective film formed on the substrate is removed in an atmospheric apparatus, thereby exposing a clean surface. The protective film removal process S43 can be the same as the protective film removal process S33 in the third embodiment.

[0145] Atmospheric treatment step S44 is a step performed after the protective film removal step S43, and it involves performing various atmospheric treatments on the substrate within an atmospheric apparatus. Atmospheric treatment step S44 can be the same as atmospheric treatment step S34 in the third embodiment.

[0146] As explained above, according to the semiconductor device manufacturing method of the fourth embodiment, a protective film containing an ionic liquid is pre-formed and coated on the surface of a substrate, and the protective film is removed in a vacuum before the film formation process begins. This suppresses the formation of oxides on the substrate surface, allowing the desired film to be formed on a clean surface where oxide formation is suppressed. Consequently, the degradation of interfacial properties (e.g., electrical and mechanical properties) between the substrate surface and the desired film can be suppressed.

[0147] [Ionic liquids]

[0148] Ionic liquids are ionic compounds that are liquid at room temperature and consist of cations and anions. The ionic liquids used in this embodiment are those whose properties change according to environmental factors. These environmental factors include, for example, temperature. The physical properties include, for example, at least one of viscosity and binding properties.

[0149] As an example of the ionic liquid used in the implementation, an ionic liquid that undergoes a reversible phase transition through temperature can be utilized. Therefore, by changing the temperature of the substrate, a phase transition can occur in the ionic liquid, altering the adhesion between the ionic liquid and the substrate. That is, by controlling the temperature of the ionic liquid, it becomes possible to change it to a state where the ionic liquid acts as an adhesive film on the substrate (chip), or to a non-adhesive state where it can be easily peeled off from the substrate (chip).

[0150] For example, when coating a liquid material containing an ionic liquid onto a substrate to form a protective film, the temperature of the substrate is set to a first temperature to improve the adhesion between the ionic liquid and the substrate. As a result, the liquid material coated on the substrate remains on the substrate, forming a protective film. On the other hand, when removing the protective film formed on the substrate, the temperature of the substrate is set to a second temperature, different from the first temperature, to reduce the adhesion between the ionic liquid and the substrate. As a result, the protective film with reduced adhesion to the substrate can be easily peeled off from the substrate by physical operations such as horizontal movement, rotation, or tilting of the substrate.

[0151] Examples of cations constituting ionic liquids include pyridinium, imidazolium, ammonium, pyrrolidineium, piperidinium, and phosphonium cations containing quaternary nitrogen. Among these cations, alkyl groups (CH2) are present as side chains. n CH3.

[0152] Examples of pyridinium-type cations include, for example, C2py, represented by the chemical formula (C1-1). + C4py, represented by the chemical formula (C1-2) + However, it is not limited to this.

[0153] [Chemistry 1]

[0154]

[0155] Examples of imidazolium-type cations include, for example, C2mim, represented by the chemical formula (C2-1). + C4mim, represented by the chemical formula (C2-2) + C6mim, represented by the chemical formula (C2-3). + C8mim, represented by the chemical formula (C2-4) + However, it is not limited to this.

[0156] [Chemistry 2]

[0157]

[0158] Examples of ammonium-type cations include, for example, N, represented by the chemical formula (C3-1). 3，1，1，1+ N, represented by the chemical formula (C3-2) 4，1，1，1 + N, represented by the chemical formula (C3-3) 6，1，1，1 + N, represented by the chemical formula (C3-4) 2，2，1，(2O1) + Ch, represented by the chemical formula (C3-5) + However, it is not limited to this.

[0159] [Chemistry 3]

[0160]

[0161] Examples of pyrrolidine-onium cations include, for example, Pyr, represented by the chemical formula (C4-1). 1，3 + Pyr, with the chemical formula (C4-2) 1，4 + However, it is not limited to this.

[0162] [Chemistry 4]

[0163]

[0164] Examples of piperidinium-type cations include, for example, Pip, represented by chemical formula (C5-1). 1，3 + Pip with chemical formula (C5-2) 1，4 + However, it is not limited to this.

[0165] [Chemistry 5]

[0166]

[0167] Examples of phosphonium-type cations include, for example, P, represented by the chemical formula (C6-1). 5，2，2，2 + P, represented by the chemical formula (C6-2) 6，6，6，14 + However, it is not limited to this.

[0168] [Chemistry 6]

[0169]

[0170] As an anion constituting ionic liquid, TfO, represented by the chemical formula (Al), can be cited as an example. - Tf2N, represented by chemical formula (A2) - (TFSA - Tf3C, represented by chemical formula (A3), - FSA represented by chemical formula (A4)- CH3COO, represented by chemical formula (A5) - CF3COO, represented by chemical formula (A6) - BF4 as shown in chemical formula (A7) - PF6, represented by chemical formula (A8) - The chemical formula (A9) represents (CN)₂N. - AlCl4 with chemical formula (A10) - Al2Cl7, with the chemical formula (A11) - However, it is not limited to this.

[0171] [Chemistry 7]

[0172]

[0173] In addition, specific examples of ionic liquids include tributylhexadecylphosphonium-3-(trimethylsilyl)-1-propanesulfonate (BHDP·DSS) and N,N-diethyl-N-methyl-N(2-methoxyethyl)ammonium tetrafluoroborate (DEME·BF4).

[0174] [Example]

[0175] Reference Figures 15A to 15F As an example of the applicable method for manufacturing a semiconductor device, the case in which Cu is buried in a via during the back end of line (BEOL) process will be described. Figures 15A to 15F A process cross-sectional view illustrating an example of a method for embedding Cu into a through-hole formed by a laminated film.

[0176] first, Figure 15A As shown, a substrate 20 on which an insulating film 26 is formed is prepared on the lower layer wiring 21. An etch stop layer 23 is formed between the lower layer wiring 21 and the insulating film 26. A barrier metal film 25 is sandwiched and buried within a trench 22 formed by the interlayer insulating film 24 in the lower layer wiring 21. Examples of the lower layer wiring 21 include, for example, Cu wiring, but it is not limited thereto. Examples of the etch stop layer 23 include, for example, a silicon carbide nitride (SiCN) film, but it is not limited thereto. Examples of the interlayer insulating film 24 include, for example, a low-k film, but it is not limited thereto. Examples of the barrier metal film 25 include, for example, a tantalum nitride (TaN) film, but it is not limited thereto. Furthermore, the insulating film 26 has vias 27 and trenches 28 formed therein.

[0177] then, Figure 15BAs shown, the TaN film 29 is conformally formed inside the through-hole 27 and the trench 28 as a barrier metal film. Examples of methods for forming the TaN film 29 include, for instance, the ALD method implemented using a vacuum apparatus, but it is not limited to this.

[0178] then, Figure 15C As shown, a Cu seed film 30 is conformally formed on the TaN film 29 as a seed film. Examples of methods for forming the Cu seed film 30 include, for example, PVD, but it is not limited to this. The Cu seed film is formed using, for example, a different module within the same apparatus as the vacuum apparatus used for forming the TaN film 29.

[0179] then, Figure 15D As shown, a protective film 31 is formed by coating a liquid material containing an ionic liquid onto the substrate 20 to cover the surface of the Cu seed film 30. The protective film 31 is formed using a different module within the same apparatus as, for example, the vacuum apparatus used to form the TaN film 29 and the Cu seed film 30. Examples of ionic liquids that undergo a reversible phase transition through temperature include, but are not limited to, ionic liquids.

[0180] then, Figure 15E As shown, with the adhesion between the Cu seed film 30 and the protective film 31 reduced, physical operations such as horizontal movement, rotation, or tilting of the substrate 20 can be performed to peel off and remove the protective film 31 from the surface of the Cu seed film 30. As a method for removing the protective film 31, a spin coater utilizing an atmospheric apparatus can be used, for example. For instance, by heating the substrate 20 to reduce the adhesion between the protective film 31 and the Cu seed film 30, the protective film 31 can be removed by rotating the substrate 20 using a spin coater.

[0181] then, Figure 15FAs shown, Cu32 is embedded inside the through-hole 27 and the trench 28. The process of embedding Cu32 is carried out using, for example, an atmospheric apparatus similar to that used for removing the protective film 31. At this time, before embedding Cu32, the protective film 31 covering the surface of the Cu seed film 30 is removed, thereby allowing Cu32 to be embedded on the Cu seed film 30 where surface oxidation is suppressed. As a result, due to the suppression of the reduced adhesion between the Cu seed film 30 and Cu32, resistance to stress migration (SM) and electromigration (EM) is improved. In contrast, without the protective film 31, the surface of the Cu seed film 30 is easily oxidized before embedding Cu32, thus reducing the adhesion between the Cu seed film 30 and Cu32, and making SM and EM defects more likely to occur. Methods for embedding Cu32 include, for example, plating, but are not limited to this. Examples of plating methods include electroless deposition (ELD) and electrochemical deposition (ECD). The embedding of Cu32 into the interior of the through-holes 27 and trenches 28 is carried out using the same module (rotary coater) in the same apparatus as the atmospheric apparatus used when removing the protective film 31.

[0182] As explained above, according to the embodiment, after the Cu seed film 30 is formed, a liquid material containing an ionic liquid is coated onto the surface of the Cu seed film 30 to form a protective film 31. Before embedding the Cu 32, the protective film 31 is removed. This suppresses the formation of a natural oxide film on the surface of the Cu seed film 30.

[0183] Furthermore, the above embodiments describe the situation where a protective film 31 is formed after the TaN film 29 and the Cu seed film 30 are formed inside the through-hole 27 and the trench 28, and Cu 32 is embedded after the protective film 31 is removed. This disclosure is not limited to this. For example, the Cu seed film 30 can be omitted.

[0184] [A variation of the slot coater]

[0185] Reference Figure 16 The configuration of the slot coating machine of the first modified example will be described. Figure 16 A schematic diagram showing the slit coating machine of the first modified example.

[0186] The slot coater 700 includes a platform 710, a liquid supply unit 720, an auxiliary platform 730, a concentration measuring nozzle 740, and a control unit 790.

[0187] Platform 710 holds chip W in a generally horizontal position. Platform 710 is rotatably configured and connected to the upper end of rotating shaft 712, which is rotated by drive mechanism 711. A liquid receiving part 713 with an upper side opening is provided around the lower part of platform 710. Liquid receiving part 713 catches liquid materials that slide off or are ejected from chip W.

[0188] The liquid supply unit 720 includes an ionic liquid supply source 721, an ionic liquid supply piping 722, a washing liquid supply source 723, a washing liquid supply piping 724, and a slit nozzle 725.

[0189] The ionic liquid supply source 721 supplies ionic liquid IL to the slit nozzle 725 via ionic liquid supply piping 722. The ionic liquid IL can be any of the aforementioned ionic liquids.

[0190] The ionic liquid supply piping 722 is a piping that supplies ionic liquid IL from the ionic liquid supply source 721 to the slit nozzle 725. The ionic liquid supply piping 722 is formed by, for example, a conductive member.

[0191] The washing liquid supply source 723 supplies washing liquid CL to the slit nozzle 725 via washing liquid supply piping 724. The washing liquid CL is suitable for liquid materials that are widely used in semiconductor cleaning processes, including isopropanol (IPA), and can also be washing agents used in other semiconductor processes (e.g., acidic washing agents such as phosphoric acid, hydrofluoric acid, hydrochloric acid, nitric acid, etc., or alkaline washing liquids such as SC1 (NH4OH / H2O2 / H2O)).

[0192] The detergent supply piping 724 is a piping that supplies detergent CL from detergent supply source 723 to slit nozzle 725. The detergent supply piping 724 is formed by, for example, a conductive member.

[0193] The slit nozzle 725 supplies ionic liquid IL and washing liquid CL to the surface of the chip W placed on the platform 710 by moving horizontally upwards. Furthermore, the slit nozzle 725 supplies ionic liquid IL and washing liquid CL to the auxiliary platform 730 by moving upwards. The slit nozzle 725 includes a main body 725a, a housing 725b, an ionic liquid supply port 725c, and a washing liquid supply port 725d.

[0194] The main body 725a has an ionic liquid flow path 725e inside. The ionic liquid flow path 725e is connected to an ionic liquid supply pipe 722 via an ionic liquid supply port 725c formed in the upper part of the main body 725a. Thus, ionic liquid IL from the ionic liquid supply source 721 is supplied to the ionic liquid flow path 725e via the ionic liquid supply pipe 722 and the ionic liquid supply port 725c, and is discharged from the lower end of the ionic liquid flow path 725e. The main body 725a is formed by, for example, an insulating member. The cross-sectional area of ​​the ionic liquid flow path 725e is optimized according to the viscosity and contact angle (wetting properties) of the ionic liquid IL.

[0195] The outer casing 725b is disposed outside the main body 725a in such a way that a washing liquid flow path 725f is formed between the outer casing and the main body 725a. The washing liquid flow path 725f is connected to the washing liquid supply pipe 724 via a washing liquid supply port 725d. Thus, washing liquid CL from the washing liquid supply source 723 is supplied to the washing liquid flow path 725f via the washing liquid supply pipe 724 and the washing liquid supply port 725d, and is discharged from the lower end of the washing liquid flow path 725f. The outer casing 725b is formed by, for example, a conductive member. The cross-sectional area of ​​the washing liquid flow path 725f is optimized according to the viscosity and contact angle (wetting properties) of the washing liquid CL.

[0196] Thus, the slit nozzle 725 has a dual piping structure comprising an ionic liquid flow path 725e and a washing liquid flow path 725f formed by the body 725a and the housing 725b. Therefore, the ionic liquid IL and the washing liquid CL can be coated using a single slit nozzle 725.

[0197] The auxiliary platform 730 is separate from the platform 710 and is located at a position where the ionic liquid IL and the washing liquid CL can be coated by the liquid supply unit 720. Figure 16 In this example, the auxiliary platform 730 is disposed to the side of the platform 710. A plate-shaped member 731 with an opening 731a in the area where the ionic liquid IL and the washing liquid CL are coated is disposed on the top of the auxiliary platform 730. The temperature of the auxiliary platform 730 can be adjusted by heating or cooling means. The heating means can be, for example, a heater embedded inside the auxiliary platform 730. The cooling means can be, for example, a cooling medium flow path formed inside the auxiliary platform 730.

[0198] The concentration measuring nozzle 740 is formed, for example, by a tubular member. The concentration measuring nozzle 740 is positioned so that one end contacts the ionic liquid IL and washing liquid CL coated on the auxiliary platform 730. Thus, if the ionic liquid IL and washing liquid CL are coated on the auxiliary platform 730 via the liquid supply section 720, a portion of the coated ionic liquid IL and washing liquid CL is drawn up from one end of the tubular member. That is, a portion of the ionic liquid IL and washing liquid CL coated on the auxiliary platform 730 by the liquid supply section 720 can be recovered via the concentration measuring nozzle 740. By performing various measurements on the ionic liquid IL and washing liquid CL recovered using the concentration measuring nozzle 740, the concentrations of the ionic liquid IL and washing liquid CL can be determined. Examples of various measurements include, for example, resistivity measurement, chromatographic measurement, and optical measurement (e.g., FT-IR). Furthermore, in the case of the ionic liquid IL used for plating, examples of various measurements include, for example, colorimetric measurement and non-contact conductivity measurement.

[0199] The control unit 790 controls various elements of the slot coater 700. For example, the control unit 790 processes computer-executable instructions that enable the slot coater 700 to perform the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing the ionic liquid IL in the protective film formation step S13. The control unit 790 can be configured to control various elements of the slot coater 700 in a manner that allows the wet treatment in the atmospheric treatment step S12 and the coating of the liquid material containing the ionic liquid IL in the protective film formation step S13 to be performed. The control unit 790 includes, for example, a computer. The computer includes, for example, a CPU, a memory unit, and a communication interface.

[0200] Reference Figure 17 An example of the operation of the slot coating machine 700 in the first modified example will be described. Figure 17 The figure shows an example of the operation of the slit coating machine 700 of the first modified example, showing an example of the operation when the concentration of the ionic liquid IL is measured after coating the chip W placed on the platform 710 with the ionic liquid IL.

[0201] First, the control unit 790 moves the slit nozzle 725 horizontally above the chip W mounted on the platform 710, while simultaneously discharging ionic liquid IL from the slit nozzle 725 toward the chip W. Thus, as... Figure 17 As shown in the left figure, the ionic liquid IL is coated on the chip W mounted on the platform 710.

[0202] Next, the control unit 790 moves the slit nozzle 725 upwards towards the auxiliary platform 730, specifically to a position corresponding to the opening 731a of the plate-shaped member 731. Furthermore, the control unit 790 discharges the ionic liquid IL from the slit nozzle 725 toward the auxiliary platform 730. Thus, as... Figure 17 As shown in the right figure, the ionic liquid IL is coated on the auxiliary platform 730.

[0203] At this time, a portion of the ionic liquid IL discharged to the auxiliary platform 730 is drawn up by the concentration measuring nozzle 740. Therefore, by performing various measurements on the ionic liquid IL drawn up by the concentration measuring nozzle 740, the concentration of the ionic liquid IL can be confirmed.

[0204] Furthermore, when confirming the concentration of the ionic liquid IL, it is easier to perform concentration measurement since the surface tension (viscosity) of the ionic liquid is reduced, so it is preferable to adjust the temperature of the auxiliary platform 730.

[0205] Reference Figure 18 Another example of the operation of the slot coating machine 700 of the first modified example will be described. Figure 18 The figure shows another example of the operation of the slit coating machine 700 of the first modified example, showing an example of the operation when the slit nozzle 725 is automatically washed after the ionic liquid IL is coated on the chip W placed on the platform 710.

[0206] First, the control unit 790 moves the slit nozzle 725 horizontally above the chip W mounted on the platform 710, while simultaneously discharging ionic liquid IL from the slit nozzle 725 toward the chip W. Thus, as... Figure 18 As shown in the left figure, the ionic liquid IL is coated on the chip W mounted on the platform 710.

[0207] Next, the control unit 790 moves the slit nozzle 725 upwards on the auxiliary platform 730, corresponding to the position of the opening 731a of the plate-shaped member 731. Furthermore, the control unit 790 discharges washing liquid CL from the slit nozzle 725 onto the auxiliary platform 730. Thus, as... Figure 18 As shown in the right figure, the washing liquid CL is applied to the auxiliary platform 730 to wash the front end of the slit nozzle 725.

[0208] Reference Figure 19 and Figure 20 In the first modified example of the slit coating machine 700, the mechanism for suppressing the contact between the ionic liquid IL and the washing liquid CL will be described.

[0209] Figure 19The diagram illustrates a mechanism for suppressing contact between the ionic liquid IL and the washing liquid CL, showing an example of the operation when the liquid material discharged from the slit nozzle 725 is switched from the ionic liquid IL to the washing liquid CL.

[0210] First, such as Figure 19 As shown in Figure (a), the control unit 790 uses the slit nozzle 725 to stop the discharge of the ionic liquid IL.

[0211] Next, as Figure 19 As shown in Figure (b), the control unit 790 draws the ionic liquid IL back to above the ionic liquid flow path 725e by, for example, a sack-back action.

[0212] Next, as Figure 19 As shown in Figure (c), the control unit 790 moves the slit nozzle 725 upwards towards the auxiliary platform 730, corresponding to the position of the opening 731a of the plate-shaped member 731. Furthermore, the control unit 790 discharges washing liquid CL from the slit nozzle 725 onto the auxiliary platform 730. At this time, a portion of the washing liquid CL also flows into the ionic liquid flow path 725e, but the ionic liquid IL is drawn back into the ionic liquid flow path 725e by a back-suction action. Therefore, an air accumulation AP is formed between the ionic liquid IL and the washing liquid CL within the ionic liquid flow path 725e. As a result, the mixing of the ionic liquid IL into the washing liquid CL is suppressed.

[0213] Furthermore, a portion of the washing liquid CL is drawn up by the concentration measuring nozzle 740. Therefore, by performing various measurements on the washing liquid CL drawn up by the concentration measuring nozzle 740, the concentration of the washing liquid CL can be confirmed. This concentration of the washing liquid CL represents a value different from the value when the ionic liquid IL is mixed in and when it is not. Therefore, by confirming the concentration of the washing liquid CL, the presence or absence of the ionic liquid IL relative to the washing liquid CL can be confirmed.

[0214] Next, as Figure 19 As shown in Figure (d), the control unit 790 moves the slit nozzle 725 horizontally above the chip W mounted on the platform 710 while discharging washing liquid CL from the slit nozzle 725 toward the chip W. Thus, washing liquid CL is coated onto the chip W mounted on the platform 710.

[0215] As explained above, according to the slit coater 700 of the first modification, when switching the liquid material discharged from the slit nozzle 725 from the ionic liquid IL to the washing liquid CL, the contact between the ionic liquid IL and the washing liquid CL can be suppressed. As a result, the instability of the concentration of the washing liquid CL after switching from the ionic liquid IL to the washing liquid CL can be prevented.

[0216] Figure 20 The diagram illustrates a mechanism for suppressing contact between the ionic liquid IL and the washing liquid CL, showing an example of the operation when the liquid material discharged from the slit nozzle 725 is switched from the washing liquid CL to the ionic liquid IL.

[0217] First, such as Figure 20 As shown in Figure (a), the control unit 790 uses the slit nozzle 725 to stop the discharge of the washing liquid CL.

[0218] Next, as Figure 20 As shown in Figure (b), the control unit 790 draws the washing liquid CL back to the top of the washing liquid flow path 725f by, for example, a sack-back operation.

[0219] then, Figure 20 As shown in Figure (c), the control unit 790 moves the slit nozzle 725 upwards towards the auxiliary platform 730, corresponding to the position of the opening 731a of the plate-shaped member 731. Furthermore, the control unit 790 discharges the ionic liquid IL from the slit nozzle 725 onto the auxiliary platform 730. At this time, a portion of the ionic liquid IL also flows into the washing liquid flow path 725f, but the washing liquid CL is drawn back into the washing liquid flow path 725f by a back-suction action. Therefore, an air accumulation AP is formed between the washing liquid CL and the ionic liquid IL within the washing liquid flow path 725f. As a result, the mixing of the washing liquid CL into the ionic liquid IL can be suppressed.

[0220] Furthermore, a portion of the ionic liquid IL is drawn up by the concentration measuring nozzle 740. Therefore, by performing various measurements on the ionic liquid IL drawn up by the concentration measuring nozzle 740, the concentration of the ionic liquid IL can be confirmed. The concentration of the ionic liquid IL represents a value that differs depending on whether the washing liquid CL is mixed in or not. Therefore, by confirming the concentration of the ionic liquid IL, the presence or absence of the washing liquid CL relative to the ionic liquid IL can be determined.

[0221] Next, as Figure 20 As shown in Figure (d), the control unit 790 moves the slit nozzle 725 horizontally above the chip W mounted on the platform 710 while discharging the ionic liquid IL from the slit nozzle 725 toward the chip W. Thus, the ionic liquid IL is coated onto the chip W mounted on the platform 710.

[0222] As explained above, the slit coater 700 according to the first modification can suppress contact between the washing liquid CL and the ionic liquid IL when the liquid material discharged from the slit nozzle 725 is switched from the washing liquid CL to the ionic liquid IL. As a result, it can suppress the instability of the concentration of the ionic liquid IL after switching from the washing liquid CL to the ionic liquid IL.

[0223] Reference Figure 21 and Figure 22 The configuration of the slot coating machine in the second modified example will be explained. Figure 21 A schematic diagram showing the slit coating machine of the second modified example. Figure 22 This is a circuit diagram used to illustrate the platform grounding circuit.

[0224] The slot coating machine 800 includes a platform 810, a liquid supply unit 820, an auxiliary platform 830, a concentration measuring nozzle 840, a platform grounding circuit 850, a nozzle position adjustment unit 860, and a control unit 890.

[0225] Platform 810, liquid supply unit 820, auxiliary platform 830, concentration measuring nozzle 840 and control unit 890 can have the same configuration as platform 710, liquid supply unit 720, auxiliary platform 730, concentration measuring nozzle 740 and control unit 790 in slot coater 700.

[0226] Platform 810 holds chip W in a generally horizontal position. Platform 810 is rotatably configured and connected to the upper end of rotating shaft 812, which is rotated by drive mechanism 811. A liquid receiving part 813 with an upper side opening is provided around the lower part of platform 810. Liquid receiving part 813 catches liquid materials that slide off or are ejected from chip W.

[0227] The liquid supply unit 820 includes an ionic liquid supply source 821, an ionic liquid supply pipe 822, a washing liquid supply source 823, a washing liquid supply pipe 824, and a slit nozzle 825. The slit nozzle 825 has a main body 825a, a housing 825b, an ionic liquid supply port 825c, a washing liquid supply port 825d, an ionic liquid flow path 825e, and a washing liquid flow path 825f.

[0228] The auxiliary platform 830 is provided with a plate-shaped member 831 having an opening 831a in the area coated with ionic liquid IL and washing liquid CL.

[0229] The platform grounding circuit 850 includes a power supply 851, a current meter 852, and wiring 853.

[0230] Power supply 851 applies a direct current (DC) voltage between the ionic liquid supply pipe 822 and platform 810 via wiring 853. This causes a small current to flow from the ionic liquid supply pipe 822 through the ionic liquid IL onto platform 810. Furthermore, power supply 851 applies a DC voltage between the ionic liquid supply pipe 822 and auxiliary platform 830 via wiring 853. This causes a small current to flow from the ionic liquid supply pipe 822 through the ionic liquid IL onto auxiliary platform 830. Additionally, power supply 851 can superimpose an alternating current (AC) component onto the DC voltage.

[0231] A galvanometer 852 is disposed in wiring 853. The galvanometer 852 measures a minute current flowing from the ionic liquid supply pipe 822 through the ionic liquid IL in platform 810. The value of this minute current changes depending on the volume of the overflow portion T1 formed by the ionic liquid IL on the chip W mounted on platform 810. Therefore, by monitoring the value of the minute current measured by the galvanometer 852, the volume of the overflow portion T1 formed by the ionic liquid IL on chip W can be determined. Furthermore, the galvanometer 852 measures a minute current flowing from the ionic liquid supply pipe 822 through the ionic liquid IL in auxiliary platform 830. The value of this minute current changes depending on the volume of the overflow portion T2 formed by the ionic liquid IL on auxiliary platform 830. Therefore, by monitoring the value of the minute current measured by the galvanometer 852, the volume of the overflow portion T2 formed by the ionic liquid IL on auxiliary platform 830 can be determined.

[0232] Wiring 853 electrically connects power supply 851, ionic liquid supply piping 822, platform 810 and auxiliary platform 830.

[0233] The nozzle position adjustment unit 860 controls the height position of the slit nozzle 825 based on the measurement value of the ammeter 852, in a manner that the volume of the overflow portion T1 formed by the ionic liquid IL on the chip W mounted on the platform 810 is fixed. Furthermore, the nozzle position adjustment unit 860 controls the height position of the slit nozzle 825 based on the measurement value of the ammeter 852, in a manner that the volume of the overflow portion T2 formed by the ionic liquid IL on the auxiliary platform 830 is fixed. Additionally, the nozzle position adjustment unit 860 can control the height position of the slit nozzle 825 based on the resistance value of the ionic liquid IL calculated based on the DC voltage applied by the power supply 851 and the minute current measured by the ammeter 852. The nozzle position adjustment unit 860 includes a feedback control circuit 861 and an actuator 862.

[0234] The feedback control circuit 861 controls the actuator 862 based on the measured value of the ammeter 852. For example, the feedback control circuit 861 controls the actuator 862 in a way that makes the measured value of the ammeter 852 constant. This allows the distance between the top surface of the chip W and the tip of the slit nozzle 825 to be maintained approximately constant. Furthermore, the distance between the top surface of the auxiliary platform 830 and the tip of the slit nozzle 825 can be maintained approximately constant. Additionally, the feedback control circuit 861 can be included in the control unit 890.

[0235] The actuator 862 raises and lowers the slit nozzle 825 based on the signal from the feedback control circuit 861.

[0236] As explained above, in the slit coating machine 800 of the second modification, the nozzle position adjustment unit 860 controls the height position of the slit nozzle 825 based on the measurement value of the ammeter 852, so that the volume of the overflow portion T1 on the chip W placed on the platform 810 is constant. Therefore, the ionic liquid IL can be coated onto the chip W from the slit nozzle 825 while maintaining a substantially constant distance between the top surface of the chip W and the tip of the slit nozzle 825. As a result, the in-plane uniformity of the thickness of the ionic liquid IL coated on the chip W is improved.

[0237] Furthermore, in the second modified example of the slit coating machine 800, the nozzle position adjustment unit 860 controls the height position of the slit nozzle 825 based on the measured value of the ammeter 852, so that the volume of the overflow portion T2 on the auxiliary platform 830 is kept constant. Thus, the ionic liquid IL can be coated from the slit nozzle 825 onto the auxiliary platform 830 while maintaining a substantially constant distance between the top of the auxiliary platform 830 and the front end of the slit nozzle 825.

[0238] Furthermore, according to the second modification of the slit coater 800, a power supply 851 for applying DC voltage is provided between the ionic liquid supply pipe 822 and the platform 810. Thus, by supplying the ionic liquid IL for plating purposes from the slit nozzle 825 while applying DC voltage between the ionic liquid supply pipe 822 and the platform 819 via the power supply 851, electroplating can be performed using the slit coater 800.

[0239] Reference Figure 23 and Figure 24 The configuration of the slot coating machine in the third modified example will be explained. Figure 23 A schematic diagram showing the slit coating machine of the third modified example. Figure 24 This is a circuit diagram used to illustrate the casing grounding circuit.

[0240] The slot coating machine 900 includes a platform 910, a liquid supply unit 920, an auxiliary platform 930, a concentration measuring nozzle 940, a housing grounding circuit 950, a nozzle position adjustment unit 960, and a control unit 990.

[0241] Platform 910, liquid supply unit 920, auxiliary platform 930, concentration measuring nozzle 940 and control unit 990 can have the same configuration as platform 710, liquid supply unit 720, auxiliary platform 730, concentration measuring nozzle 740 and control unit 790 in slot coater 700.

[0242] Platform 910 holds chip W in a roughly horizontal position. Platform 910 is rotatably configured and connected to the upper end of rotating shaft 912, which is rotated by drive mechanism 911. A liquid receiving part 913 with an upper side opening is provided around the lower part of platform 910. Liquid receiving part 913 catches liquid materials that slide off or are ejected from chip W.

[0243] The liquid supply unit 920 includes an ionic liquid supply source 921, an ionic liquid supply pipe 922, a washing liquid supply source 923, a washing liquid supply pipe 924, and a slit nozzle 925. The slit nozzle 925 has a main body 925a, a housing 925b, an ionic liquid supply port 925c, a washing liquid supply port 925d, an ionic liquid flow path 925e, and a washing liquid flow path 925f.

[0244] The auxiliary platform 930 is provided with a plate-shaped member 931 having an opening 931a in the area coated with ionic liquid IL and washing liquid CL.

[0245] The casing grounding circuit 950 includes a power supply 951, an ammeter 952, and wiring 953.

[0246] Power supply 951 applies a DC voltage between the ionic liquid supply pipe 922 and the housing 925b via wiring 953. This allows a small current to flow from the ionic liquid supply pipe 922 through the ionic liquid IL into the housing 925b. Additionally, power supply 951 can superimpose an AC component onto the DC voltage.

[0247] A galvanometer 952 is disposed in wiring 953. The galvanometer 952 measures a minute current flowing from the ionic liquid supply pipe 922 through the ionic liquid IL within the housing 925b. The value of this minute current varies depending on the volume of the overflow portion T1 formed by the ionic liquid IL on the chip W mounted on the platform 910. Therefore, by monitoring the value of the minute current measured by the galvanometer 952, the volume of the overflow portion T1 formed by the ionic liquid IL on the chip W can be determined. Furthermore, the value of this minute current varies depending on the volume of the overflow portion T2 formed by the ionic liquid IL on the auxiliary platform 930. Therefore, by monitoring the value of the minute current measured by the galvanometer 952, the volume of the overflow portion T2 formed by the ionic liquid IL on the auxiliary platform 930 can be determined.

[0248] Wiring 953 electrically connects the power supply 951, the ionic liquid supply piping 922, and the housing 925b.

[0249] The nozzle position adjustment unit 960 controls the height position of the slit nozzle 925 by adjusting the volume of the overflow portion T1 formed by the ionic liquid IL on the chip W mounted on the platform 910, based on the measurement value of the ammeter 952. Furthermore, the nozzle position adjustment unit 960 controls the height position of the slit nozzle 925 by adjusting the volume of the overflow portion T2 formed by the ionic liquid IL on the auxiliary platform 930, based on the measurement value of the ammeter 952. Additionally, the nozzle position adjustment unit 960 can control the height position of the slit nozzle 925 based on the resistance value of the ionic liquid IL calculated from the DC voltage applied by the power supply 951 and the minute current measured by the ammeter 952. The nozzle position adjustment unit 960 includes a feedback control circuit 961 and an actuator 962.

[0250] The feedback control circuit 961 controls the actuator 962 based on the measured value of the ammeter 952. For example, the feedback control circuit 961 controls the actuator 962 in a way that makes the measured value of the ammeter 952 constant. This allows the distance between the top surface of the chip W and the tip of the slit nozzle 925 to be maintained approximately constant. Furthermore, the distance between the top surface of the auxiliary platform 930 and the tip of the slit nozzle 925 can be maintained approximately constant. Additionally, the feedback control circuit 961 can be included in the control unit 990.

[0251] Actuator 962 raises and lowers slit nozzle 925 based on signals from feedback control circuit 961.

[0252] As explained above, in the slit coating machine 900 of the third modification, the nozzle position adjustment unit 960 controls the height position of the slit nozzle 925 based on the measurement value of the ammeter 952, so that the volume of the overflow portion T1 on the chip W placed on the platform 910 is constant. Therefore, the ionic liquid IL can be coated onto the chip W from the slit nozzle 925 while maintaining a substantially constant distance between the top surface of the chip W and the tip of the slit nozzle 925. As a result, the in-plane uniformity of the thickness of the ionic liquid IL coated on the chip W is improved.

[0253] Furthermore, according to the slit coating machine 900 of the third modification, the nozzle position adjustment unit 960 controls the height position of the slit nozzle 925 based on the measured value of the ammeter 952, so that the volume of the overflow part T2 on the auxiliary platform 930 is kept constant. Thus, ionic liquid IL can be coated from the slit nozzle 925 onto the auxiliary platform 930 while maintaining a substantially constant distance between the top of the auxiliary platform 930 and the front end of the slit nozzle 925.

[0254] Reference Figure 25 The configuration of the slot coating machine in the fourth modified example will be explained. Figure 25 A schematic diagram showing the slit coating machine of the fourth modified example.

[0255] The slot coater 1000 includes a platform 1010, an end liquid supply unit 1020, and a control unit 1090.

[0256] Platform 1010 and control unit 1090 can have the same configuration as platform 701 and control unit 790 in slot coater 700.

[0257] Platform 1010 holds chip W in a generally horizontal position. Platform 1010 is rotatably configured and connected to the upper end of rotating shaft 1012, which is rotated by drive mechanism 1011. A liquid receiving part 1013 with an upper side opening is provided around the lower part of platform 1010. Liquid receiving part 1013 catches liquid materials that slide off or are ejected from chip W.

[0258] The end liquid supply unit 1020 coats the end of the chip W with liquid material. The end liquid supply unit 1020 includes an ionic liquid supply source 1021, an ionic liquid supply pipe 1022, a washing liquid supply source 1023, a washing liquid supply pipe 1024, and a slit nozzle 1025.

[0259] The ionic liquid supply source 1021, ionic liquid supply piping 1022, washing liquid supply source 1023, and washing liquid supply piping 1024 may have the same configuration as the ionic liquid supply source 721, ionic liquid supply piping 722, washing liquid supply source 723, and washing liquid supply piping 724.

[0260] The slit nozzle 1025 is configured to move between a position close to the chip W and a position separate from the chip W on its side. By moving towards the position close to the chip W, the slit nozzle 1025 supplies ionic liquid IL and washing liquid CL to the end of the chip W mounted on the platform 1010. The slit nozzle 1025 includes a main body 1025a, a housing 1025b, an ionic liquid supply port 1025c, a washing liquid supply port 1025d, an ionic liquid flow path 1025e, and a washing liquid flow path 1025f.

[0261] The main body 1025a, outer shell 1025b, ionic liquid supply port 1025c, washing liquid supply port 1025d, ionic liquid flow path 1025e, and washing liquid flow path 1025f can have the same configuration as the main body 725a, outer shell 725b, ionic liquid supply port 725c, washing liquid supply port 725d, ionic liquid flow path 725e, and washing liquid flow path 725f in the slit nozzle 725.

[0262] Alternatively, the slit nozzle 1025 can be configured to supply ionic liquid IL and washing liquid CL to the surface of the chip W placed on the platform 1010 by moving the upper part of the chip W in a horizontal direction.

[0263] Reference Figure 26 An example of the operation of the slit coating machine 1000 in the fourth modified example will be described. Figure 26 The figure shows an example of the operation of the slit coating machine 1000 in the fourth modified example, showing an example of the operation when the ionic liquid IL is coated on the end of the chip W placed on the platform 1010.

[0264] When the end of the chip W mounted on platform 1010 is coated with ionic liquid IL, such as Figure 26 As shown, the control unit 1090 moves the slit nozzle 1025 towards a position close to the chip W. Then, while discharging ionic liquid IL from the slit nozzle 1025 to the end of the chip W, the control unit 1090 rotates the platform 1010 and the chip W mounted on it via the drive mechanism 1011 and the rotating shaft 1012. As a result, the ionic liquid IL is coated around the entire circumference of the end of the chip W mounted on the platform 1010.

[0265] Reference Figure 27 Another example of the operation of the slit coating machine 1000 in the fourth variation will be described. Figure 27 The figure shows another example of the operation of the slit coating machine 1000 of the fourth modification, illustrating an example of the operation when the washing liquid CL is applied to the end of the chip W placed on the platform 1010.

[0266] When the end of the chip W mounted on platform 1010 is coated with washing solution CL, as follows: Figure 27 As shown, the control unit 1090 moves the slit nozzle 1025 towards a position close to the chip W. Then, while discharging washing liquid CL from the slit nozzle 1025 to the end of the chip W, the control unit 1090 rotates the platform 1010 and the chip W mounted on it via the drive mechanism 1011 and the rotating shaft 1012. As a result, the washing liquid CL is coated around the entire circumference of the end of the chip W mounted on the platform 1010.

[0267] Reference Figures 28A-28C An example of the application of the slit coating machine 1000 in the fourth modified example will be described. Figures 28A-28C This figure shows an applicable example of the slot coater 1000 used to illustrate the fourth modified example. Hereinafter, as an applicable example of the slot coater 1000, a film formation method for forming an oxide film on the chip W will be described.

[0268] First, such as Figure 28A As shown, the ionic liquid IL is selectively coated onto the end of the chip W using a slot coater 1000 (ionic liquid coating process). The ionic liquid IL can be an ionic liquid that is ligated to the surface by an element that hinders the adsorption of the precursor used in the film formation process described later. Examples of such elements include halogens such as fluorine (F), chlorine (Cl), bromine (Br), iodine (I), astatine (At), and tennessine (Ts).

[0269] Next, as Figure 28B As shown, in the ionic liquid coating process, an oxide film Ox is formed on a chip W with an ionic liquid IL coated at its ends using a vacuum film deposition apparatus (e.g., the vacuum film deposition apparatus 100 described above). Examples of methods for forming an oxide film Ox include atomic layer deposition (ALD) and chemical vapor deposition (CVD). In the film deposition process, if the surface of the chip W has OH groups, precursors are adsorbed onto them, thereby depositing an oxide film. However, the aforementioned halogens replace the OH groups on the surface of the chip W, thus hindering the adsorption of precursors. Therefore, the ends of the chip W do not form an oxide film Ox, or if they do, the amount is minimal.

[0270] Next, the washing solution CL is selectively coated onto the ends of the chip W using a slot coater 1000 (washing solution coating process). Thus, Figure 28CAs shown, the ionic liquid IL coated on the ends of chip W is washed away by the washing solution CL. As a result, an oxide film Ox remains on the chip W except for the areas at the ends. At this time, during the film formation process, even if very little oxide film Ox is formed on the ends of chip W in the ionic liquid IL, the oxide film Ox is washed away and removed along with the ionic liquid IL. The washing solution CL is a liquid material that is widely used in semiconductor cleaning processes containing isopropanol (IPA), but it can be a detergent used in other semiconductor processes (e.g., acidic detergents such as phosphoric acid, hydrofluoric acid, hydrochloric acid, nitric acid, or alkaline detergents such as SC1 (NH4OH / H2O2 / H2O)).

[0271] The film formation method described above can prevent film formation on the chip W at its ends (e.g., beveled surfaces), thus suppressing dust generation from the chip W at its ends.

[0272] In addition, Figures 28A-28C In the example given, the case where an oxide film (Ox) is formed on the chip W is used as an example, but it is not limited to this. For example, the same principle applies when a nitride film is formed on the chip W. In this case, the halogen hinders the adsorption of the precursor by substituting the NH groups on the surface of the chip W.

[0273] Furthermore, in the slit coater 1000 of the fourth modification, the same platform grounding circuit 850 and nozzle position adjustment unit as in the slit coater 800 of the second modification can be provided. As a result, while maintaining a substantially constant distance between the end of the chip W and the tip of the slit nozzle 1025, the ionic liquid IL can be coated from the slit nozzle 1025 onto the end of the chip W. Consequently, the circumferential uniformity of the thickness of the ionic liquid IL coated on the end of the chip W is improved.

[0274] Furthermore, in the fourth modified example of the slit coating machine 1000, the same housing grounding circuit 950 and nozzle position adjustment unit as those in the third modified example of the slit coating machine 900 can be provided. This allows for the coating of the ionic liquid IL from the slit nozzle 1025 to the end of the chip W while maintaining a substantially constant distance between the end of the chip W and the front end of the slit nozzle 1025. As a result, the circumferential uniformity of the thickness of the ionic liquid IL coated on the end of the chip W is improved.

[0275] Reference Figure 29 The configuration of the slot coating machine in the fifth modified example will be described. Figure 29 A schematic diagram showing the slit coating machine of the fifth modified example.

[0276] The slot coater 1100 includes a platform 1110, an end liquid supply unit 1120, an auxiliary platform 1130, a concentration measuring nozzle 1140, and a control unit 1190.

[0277] Platform 1110 and control unit 1190 can have the same configuration as platform 710 and control unit 790 in slot coater 700.

[0278] Platform 1110 holds chip W in a generally horizontal position. Platform 1110 is rotatably configured and connected to the upper end of rotating shaft 1112, which is rotated by drive mechanism 1111. A liquid receiving part 1113 with an upper side opening is provided around the lower part of platform 1110. Liquid receiving part 1113 catches liquid materials that slide off or are ejected from chip W.

[0279] The end liquid supply unit 1120 coats the end of the chip W with liquid material. The end liquid supply unit 1120 includes an ionic liquid supply source 1121, an ionic liquid supply pipe 1122, a washing liquid supply source 1123, a washing liquid supply pipe 1124, and a slit nozzle 1125. The ionic liquid supply source 1121, the ionic liquid supply pipe 1122, the washing liquid supply source 1123, the washing liquid supply pipe 1124, and the slit nozzle 1125 can have the same configuration as the ionic liquid supply source 1021, the ionic liquid supply pipe 1022, the washing liquid supply source 1023, the washing liquid supply pipe 1024, and the slit nozzle 1025 in the slit coater 1000.

[0280] The slit nozzle 1125 includes a main body 1125a, a housing 1125b, an ionic liquid supply port 1125c, a washing liquid supply port 1125d, an ionic liquid flow path 1125e, and a washing liquid flow path 1125f. The main body 1125a, housing 1125b, ionic liquid supply port 1125c, washing liquid supply port 1125d, ionic liquid flow path 1125e, and washing liquid flow path 1125f can have the same configuration as the main body 725a, housing 725b, ionic liquid supply port 725c, washing liquid supply port 725d, ionic liquid flow path 725e, and washing liquid flow path 725f in the slit nozzle 725.

[0281] The auxiliary platform 1130 is separated from the platform 1110 and is positioned where the ionic liquid IL and the washing liquid CL can be coated via the end liquid supply section 1120. The auxiliary platform 1130 is configured to move between a coating position and a retraction position. The coating position is when the slit nozzle 1125 moves to a position separate from the chip W, and the slit nozzle 1125 can coat the liquid material onto the coating surface of the auxiliary platform 1130. The retraction position is when the slit nozzle 1125 moves between a position close to the chip W and a position separate from the chip W, and there is no contact between the slit nozzle 1125 and the chip W. Furthermore, Figure 29 The text indicates that the auxiliary platform 1130 has moved to a retracted position. The coating surface of the auxiliary platform 1130 is provided with a plate-shaped member 1131 having an opening 1131a in the area where the ionic liquid IL and the washing liquid CL are coated. The temperature of the coating surface of the auxiliary platform 1130 can be adjusted by heating and cooling means. The heating means can be, for example, a heater embedded inside the auxiliary platform 1130. The cooling means can be, for example, a cooling medium flow path formed inside the auxiliary platform 1130.

[0282] The concentration measuring nozzle 1140 is formed, for example, by a tubular member. The concentration measuring nozzle 1140 is positioned so that one end contacts the ionic liquid IL and washing liquid CL coated on the coating surface of the auxiliary platform 1130. Thus, if the ionic liquid IL and washing liquid CL are coated onto the coating surface of the auxiliary platform 1130 via the end liquid supply section 1120, a portion of the coated ionic liquid IL and washing liquid CL is drawn up from one end of the tubular member. That is, a portion of the ionic liquid IL and washing liquid CL coated on the coating surface of the auxiliary platform 1130 can be recovered via the concentration measuring nozzle 1140 and the end liquid supply section 1120. By performing various measurements on the ionic liquid IL and washing liquid CL recovered using the concentration measuring nozzle 1140, the concentrations of the ionic liquid IL and the washing liquid CL can be determined. Examples of various measurements include resistivity measurement, chromatographic measurement, and optical measurement (e.g., FT-IR). Furthermore, in the case of ionic liquid IL for plating applications, various measurements can be taken, such as colorimetric measurements and conductivity measurements under non-contact conditions.

[0283] Reference Figure 30 and Figure 31 An example of the operation of the slit coating machine 1100 in the fifth modified example will be described. Figure 30 and Figure 31 The figure shows an example of the operation of the slit coating machine 1100 of the fifth modification, showing an example of the operation when the concentration of the ionic liquid IL is measured after coating the end of the chip W placed on the platform 1110 with the ionic liquid IL.

[0284] First, such as Figure 30 As shown, the control unit 1190 moves the slit nozzle 1125 to a position close to the chip W. Then, while discharging ionic liquid IL from the slit nozzle 1125 toward the end of the chip W, the control unit 1190 rotates the platform 1110 and the chip W mounted on it via the drive mechanism 1111 and the rotation shaft 1112. This coats the entire circumference of the end of the chip W mounted on the platform 1110 with ionic liquid IL.

[0285] then, Figure 31 As shown, the control unit 1190 moves the slit nozzle 1125 to a position separate from the chip W while simultaneously moving the auxiliary platform 1130 from a retracted position to a coating position. Furthermore, the control unit 1190 discharges the ionic liquid IL from the slit nozzle 1125 toward the auxiliary platform 1130. Thus, the ionic liquid IL is coated onto the auxiliary platform 1130.

[0286] At this time, a portion of the ionic liquid IL discharged to the auxiliary platform 1130 is drawn up by the concentration measuring nozzle 1140. Therefore, by performing various measurements on the ionic liquid IL drawn up by the concentration measuring nozzle 1140, the concentration of the ionic liquid IL can be confirmed.

[0287] Furthermore, since the concentration of the ionic liquid IL is confirmed, it is easier to perform concentration measurement by reducing the surface tension (viscosity) of the ionic liquid IL, so it is preferable to adjust the temperature of the auxiliary platform 1130.

[0288] Furthermore, in the slit coater 1100 of the fifth modification, the same platform grounding circuit and nozzle position adjustment unit as those in the slit coater 800 of the second modification can be provided. As a result, while maintaining a substantially constant distance between the end of the chip W and the tip of the slit nozzle 1125, the ionic liquid IL can be coated from the slit nozzle 1125 onto the end of the chip W. Consequently, the circumferential uniformity of the thickness of the ionic liquid IL coated on the end of the chip W is improved.

[0289] Furthermore, in the slit coater 1100 of the fifth modification, the same housing grounding circuit 950 and nozzle position adjustment unit as those in the slit coater 900 of the third modification can be provided. As a result, while maintaining a substantially constant distance between the end of the chip W and the tip of the slit nozzle 1125, the ionic liquid IL can be coated from the slit nozzle 1125 onto the end of the chip W. Consequently, the circumferential uniformity of the thickness of the ionic liquid IL coated on the end of the chip W is improved.

[0290] It should be considered that the embodiments disclosed herein are illustrative in all respects and are not limiting. The above embodiments may be omitted, substituted, or modified in various forms without departing from the claims and their spirit.

[0291] The following notes further disclose the above-described embodiments.

[0292] (Postscript 1)

[0293] A method for manufacturing a semiconductor device includes the following steps:

[0294] The process of coating a liquid material containing an ionic liquid onto a substrate to form a protective film;

[0295] The process of transporting the substrate with the aforementioned protective film to the atmosphere; and

[0296] The process of removing the protective film from the substrate transported by the atmosphere.

[0297] (Postscript 2)

[0298] According to the semiconductor device manufacturing method described in Appendix 1

[0299] The process of forming the above-mentioned protective film is carried out in the atmosphere.

[0300] (Note 3)

[0301] According to the semiconductor device manufacturing method described in Appendix 1

[0302] The process of forming the above-mentioned protective film is carried out in a vacuum.

[0303] (Postscript 4)

[0304] The method for manufacturing a semiconductor device according to any one of Appendices 1 to 3

[0305] The process of removing the protective film is carried out in a vacuum.

[0306] (Note 5)

[0307] The method for manufacturing a semiconductor device according to Appendix 4 further comprises the following steps:

[0308] This is a process performed after the process of removing the protective film, that is, a process in which the film is formed on the substrate in a vacuum without exposing the substrate to the atmosphere.

[0309] (Note 6)

[0310] The method for manufacturing a semiconductor device according to any one of Appendices 1 to 3

[0311] The process of removing the protective film is carried out in the atmosphere.

[0312] (Note 7)

[0313] The method for manufacturing a semiconductor device according to Appendix 6 further comprises the following steps:

[0314] This is a process performed after the process of removing the protective film, namely, the process of forming a film on the substrate in the atmosphere.

[0315] (Note 8)

[0316] The method for manufacturing a semiconductor device according to Appendix 7

[0317] In the process of forming the above-mentioned film, the above-mentioned film is formed by plating.

[0318] (Note 9)

[0319] The method for manufacturing a semiconductor device according to any one of Appendices 1 to 8

[0320] Prior to the process of forming the protective film, a further process is performed to remove the oxides generated on the substrate.

[0321] (Postscript 10)

[0322] The method for manufacturing a semiconductor device according to Appendix 9

[0323] The process of removing the aforementioned oxides is carried out in the atmosphere.

[0324] (Postscript 11)

[0325] According to the semiconductor device manufacturing method described in Appendix 10

[0326] The process for removing the oxides includes a process of removing the oxides by passing them through a solution containing hydrogen fluoride (HF).

[0327] (Postscript 12)

[0328] The method for manufacturing a semiconductor device according to Appendix 9

[0329] The process of removing the aforementioned oxides is carried out in a vacuum.

[0330] (Postscript 13)

[0331] According to the semiconductor device manufacturing method described in Appendix 12

[0332] The process for removing the above oxides includes the following steps:

[0333] The process of supplying the substrate with a mixed gas containing a halogen gas and a basic gas to modify the oxide and generate reaction products; and

[0334] The process of removing the reaction products mentioned above.

[0335] (Postscript 14)

[0336] The method for manufacturing a semiconductor device according to any one of Appendices 1 to 13

[0337] The physical properties of the aforementioned ionic liquids change due to environmental factors.

[0338] (Postscript 15)

[0339] According to the semiconductor device manufacturing method described in Appendix 14

[0340] The environmental factors mentioned above include temperature.

[0341] (Postscript 16)

[0342] The method of manufacturing a semiconductor device according to Appendix 14 or 15

[0343] The aforementioned physical properties include at least one of viscosity and adhesion.

[0344] (Postscript 17)

[0345] The method for manufacturing a semiconductor device according to any one of Appendices 1 to 16

[0346] The above-mentioned ionic liquids have the property of not evaporating in a vacuum.

[0347] (Postscript 18)

[0348] The method for manufacturing a semiconductor device according to any one of Appendices 1 to 17

[0349] The aforementioned substrate has an area where conductive material is exposed on the surface.

[0350] (Postscript 19)

[0351] A semiconductor manufacturing apparatus comprising:

[0352] A first processing module that coats a liquid material containing an ionic liquid onto a substrate to form a protective film;

[0353] The second processing module that removes the protective film formed on the substrate; and

[0354] A transport module that transports the substrate to the atmosphere between the first processing module and the second processing module.

[0355] (Postscript 20)

[0356] A system that possesses:

[0357] A first processing apparatus for coating a liquid material containing an ionic liquid onto a substrate to form a protective film;

[0358] A second processing apparatus for removing the protective film formed on the substrate; and

[0359] A transport device for atmospheric transport of the substrate between the first processing device and the second processing device.

[0360] (Postscript 21)

[0361] A coating apparatus comprising:

[0362] A platform for mounting substrates; and

[0363] A liquid supply section for coating liquid material onto the surface of the substrate mounted on the aforementioned platform.

[0364] The aforementioned liquid supply unit includes an ionic liquid flow path for discharging ionic liquid and a washing liquid flow path for discharging washing liquid.

[0365] (Postscript 22)

[0366] According to the coating apparatus described in Appendix 21

[0367] The aforementioned washing liquid flow path is located around the aforementioned ionic liquid flow path.

[0368] (Postscript 23)

[0369] According to the coating apparatus described in Appendix 21 or 22

[0370] Separately from the aforementioned platform, there is an auxiliary platform located at a position where the liquid material can be applied via the aforementioned liquid supply section.

[0371] (Postscript 24)

[0372] According to the coating apparatus described in Appendix 23

[0373] The aforementioned auxiliary platform can adjust the temperature of the surface coated with the aforementioned liquid material.

[0374] (Postscript 25)

[0375] The coating apparatus according to Appendix 23 or 24 further comprises:

[0376] A nozzle for measuring the concentration of a portion of the liquid material coated on the auxiliary platform.

[0377] (Postscript 26)

[0378] According to the coating apparatus described in Appendix 25

[0379] The concentration measuring nozzle is formed by a tubular component, which is positioned at one end in contact with the liquid material coated on the auxiliary platform.

[0380] (Postscript 27)

[0381] The coating apparatus according to any one of Appendices 21 to 26 further comprises:

[0382] The measuring unit measures the resistance value of the liquid material coated on the surface of the substrate placed on the platform by the liquid supply unit.

[0383] (Postscript 28)

[0384] The coating apparatus according to Appendix 27 further comprises:

[0385] The position adjustment unit controls the height position of the liquid supply unit based on the resistance value measured by the measuring unit.

[0386] (Postscript 29)

[0387] According to the coating apparatus described in Appendix 28

[0388] The aforementioned position adjustment unit controls the height position of the aforementioned liquid supply unit in a way that makes the resistance value measured by the aforementioned measuring unit constant.

[0389] (Postscript 30)

[0390] According to the coating apparatus described in Appendix 28 or 29

[0391] The aforementioned position adjustment unit includes:

[0392] An actuator that raises and lowers the aforementioned liquid supply section; and

[0393] The feedback control circuit controls the actuator based on the resistance value measured by the measuring unit.

[0394] (Postscript 31)

[0395] A coating apparatus comprising:

[0396] A rotatable platform for mounting a substrate; and

[0397] An end liquid supply section for coating liquid material onto the end of the substrate mounted on the platform.

[0398] The aforementioned end liquid supply unit includes: an ionic liquid flow path for discharging ionic liquid, and a washing liquid flow path for discharging washing liquid.

[0399] (Postscript 32)

[0400] According to the coating apparatus described in Appendix 31

[0401] The aforementioned washing liquid flow path is located around the aforementioned ionic liquid flow path.

[0402] (Postscript 33)

[0403] The coating apparatus according to Appendix 31 or 32

[0404] Separately from the aforementioned platform, there is an auxiliary platform provided at a position where the liquid material can be applied via the aforementioned end liquid supply section.

[0405] (Postscript 34)

[0406] According to the coating apparatus described in Appendix 33

[0407] The aforementioned auxiliary platform can adjust the temperature of the surface coated with the aforementioned liquid material.

[0408] (Postscript 35)

[0409] The coating apparatus according to Appendix 33 or 34 further comprises:

[0410] A nozzle for measuring the concentration of a portion of the liquid material coated on the auxiliary platform.

[0411] (Postscript 36)

[0412] According to the coating apparatus described in Appendix 35

[0413] The concentration measuring nozzle is formed by a tubular component, which is positioned at one end in contact with the liquid material coated on the auxiliary platform.

[0414] (Postscript 37)

[0415] The coating apparatus according to any one of Appendices 31 to 36 further comprises:

[0416] The measuring unit measures the resistance value of the liquid material coated on the surface of the substrate placed on the platform by the liquid supply unit at the end.

[0417] (Postscript 38)

[0418] The coating apparatus according to Appendix 37 further comprises:

[0419] The position adjustment unit controls the height position of the end liquid supply unit based on the resistance value measured by the measuring unit.

[0420] (Postscript 39)

[0421] According to the coating apparatus described in Appendix 38, the position adjustment unit controls the height position of the end liquid supply unit in such a way that the resistance value measured by the measuring unit is constant.

[0422] (Postscript 40)

[0423] According to the coating apparatus described in Appendix 38 or 39, the aforementioned position adjustment unit includes:

[0424] An actuator that raises and lowers the aforementioned end liquid supply section; and

[0425] The feedback control circuit controls the actuator based on the resistance value measured by the measuring unit.

[0426] (Postscript 41)

[0427] A method for manufacturing a semiconductor device includes the following steps:

[0428] The process of selectively coating an ionic liquid onto the end of a substrate;

[0429] The process of supplying a precursor to the substrate on which the aforementioned ionic liquid is coated at the aforementioned ends, and forming a film as an oxide film or a nitride film; and

[0430] A process of selectively coating the end of the substrate, which is formed into the oxide film or the nitride film described above, with a washing solution for removing the ionic liquid.

[0431] The aforementioned ionic liquid contains elements that hinder the adsorption of the aforementioned precursors.

[0432] This international application claims priority to Japanese Patent Application No. 2020-079705, filed April 28, 2020, and Japanese Patent Application No. 2020-212880, filed December 22, 2020, the entire contents of which are incorporated herein by reference.

[0433] Explanation of symbols

[0434] 10 substrate

[0435] 14 Protective film

Claims

1. A method for manufacturing a semiconductor device, comprising the following steps: The process of coating a liquid material containing an ionic liquid onto a substrate to form a protective film; The process of transporting the substrate with the protective film formed thereon to the atmosphere; and The process of removing the protective film from the substrate transported by the atmosphere. The process of removing the protective film includes heating the substrate to cause the ionic liquid phase to change, and then moving the substrate horizontally.

2. The method for manufacturing a semiconductor device according to claim 1, The process of forming the protective film is carried out in the atmosphere.

3. The method for manufacturing a semiconductor device according to claim 1, The process of forming the protective film is carried out in a vacuum.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, The process of removing the protective film is carried out in a vacuum.

5. The method for manufacturing a semiconductor device according to claim 4, further comprising the following steps: This is a process performed after the process of removing the protective film, that is, a process of forming a film on the substrate in a vacuum without exposing the substrate to the atmosphere.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, The process of removing the protective film is carried out in the atmosphere.

7. The method for manufacturing a semiconductor device according to claim 6, further comprising the following steps: This is a process performed after the process of removing the protective film, namely, the process of forming a film on the substrate in the atmosphere.

8. The method for manufacturing a semiconductor device according to claim 7, In the process of forming the film, the film is formed by a plating method.

9. A method for manufacturing a semiconductor device according to any one of claims 1 to 3, Prior to the process of forming the protective film, there is a further process of removing oxides generated on the substrate.

10. The method for manufacturing a semiconductor device according to claim 9, The process of removing the oxides is carried out in the atmosphere.

11. The method for manufacturing a semiconductor device according to claim 10, The process for removing the oxide includes: The process of removing the oxide by means of a solution containing hydrogen fluoride (HF).

12. The method for manufacturing a semiconductor device according to claim 9, The process of removing the oxide is carried out in a vacuum.

13. The method for manufacturing a semiconductor device according to claim 12, The process for removing the oxide includes the following steps: The process of supplying the substrate with a mixed gas containing a halogen gas and a basic gas to modify the oxide and generate reaction products; and The process of removing the reaction products.

14. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, The properties of the ionic liquid change due to environmental factors.

15. The method for manufacturing a semiconductor device according to claim 14, The environmental factors include temperature.

16. The method for manufacturing a semiconductor device according to claim 14, The physical property includes at least one of viscosity and adhesion.

17. A method for manufacturing a semiconductor device according to any one of claims 1 to 3, The ionic liquid has the property of not evaporating in a vacuum.

18. A method for manufacturing a semiconductor device according to any one of claims 1 to 3, The substrate has an area on its surface where conductive material is exposed.

19. A semiconductor manufacturing apparatus comprising: A first processing module that coats a liquid material containing an ionic liquid onto a substrate to form a protective film; A second processing module for removing the protective film formed on the substrate; and A transport module that transports the substrate at atmospheric level between the first processing module and the second processing module. The second processing module is configured as follows: by heating the substrate to cause the ionic liquid phase to change, and then moving the substrate horizontally to remove the protective film.

20. A semiconductor manufacturing system comprising: A first processing apparatus for coating a liquid material containing an ionic liquid onto a substrate to form a protective film; A second processing apparatus for removing the protective film formed on the substrate; and A transport device for atmospheric transport of the substrate between the first processing unit and the second processing unit. The second processing apparatus is configured as follows: by heating the substrate to cause the ionic liquid phase to change, and then moving the substrate horizontally to remove the protective film.

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