A method for preparing a stacked perovskite solar cell

Abstract

The application provides a preparation method of a laminated perovskite solar cell, comprising the following steps: providing a first cell as a bottom cell; forming a second cell on the first cell; wherein the second cell is a perovskite solar cell, and the second cell comprises a transparent electrode away from the first cell; the transparent electrode is formed by depositing transparent electrode materials in multiple steps through a multiple-step magnetron sputtering process; in the multiple-step magnetron sputtering process, the sputtering power of each step of the magnetron sputtering process is gradually increased, and the deposition thickness of the transparent electrode material deposited in each step of the magnetron sputtering process is gradually increased. The preparation method of the laminated perovskite solar cell can take into account the production efficiency of the transparent electrode and the integrity of the functional layer film of the cell.

Description

Technical Field

[0001] This invention relates to the field of solar cell manufacturing technology, and specifically to a method for preparing a tandem perovskite solar cell. Background Technology

[0002] In the research of silicon / perovskite tandem solar cells, a significant portion of the work focuses on developing a suitable transparent electrode to replace the metal electrodes commonly used in perovskite cells. Due to its advantages such as simple fabrication process, good repeatability, and the ability to balance transmittance and conductivity, sputtered transparent conductive oxide (TCO) films were early applications in the fabrication of semi-transparent perovskite solar cells. However, because perovskite films are relatively soft and their electron transport layer is thin, they are difficult to block high-energy sputtered substrates. Using high-power sputtering of the transparent electrode can easily break down the electron transport layer, causing damage to the perovskite film, or even complete breakdown, leading to the device's malfunction. Conversely, using lower-energy sputtering for transparent electrode deposition results in very long deposition times and unsatisfactory production efficiency. Therefore, a solution is needed to address the challenge of balancing the production efficiency of the transparent electrode with the integrity of the functional layer film. Summary of the Invention

[0003] Therefore, this invention provides a method for preparing a tandem perovskite solar cell to solve the problem of simultaneously achieving high production efficiency of the transparent electrode and maintaining the integrity of the cell's functional layer film.

[0004] This invention provides a method for fabricating a tandem perovskite solar cell, comprising the following steps: providing a first cell as a base cell; forming a second cell on the first cell; wherein the second cell is a perovskite solar cell, and the second cell includes a transparent electrode located away from the first cell; the transparent electrode is formed by depositing transparent electrode material stepwise through a multi-step magnetron sputtering process; in the multi-step magnetron sputtering process, the sputtering power of each magnetron sputtering process is gradually increased, and the deposition thickness of the transparent electrode material deposited in each magnetron sputtering step is gradually increased.

[0005] Optionally, a multi-step magnetron sputtering process is included, comprising 2-10 magnetron sputtering steps; the total deposition thickness of the transparent electrode material in the multi-step magnetron sputtering process is 80nm-500nm.

[0006] Optionally, the multi-step magnetron sputtering process includes four magnetron sputtering steps; wherein, in the first magnetron sputtering step, the sputtering power is 10W and the deposition thickness is 10nm; in the second magnetron sputtering step, the sputtering power is 50W and the deposition thickness is 30nm; in the third magnetron sputtering step, the sputtering power is 150W and the deposition thickness is 40nm; and in the fourth magnetron sputtering step, the sputtering power is 300W and the deposition thickness is 100nm.

[0007] Optionally, during a single-step magnetron sputtering process, the sputtering deposition pressure is 0.1 Pa to 0.5 Pa.

[0008] Optionally, during the single-step magnetron sputtering process, the sputtering deposition temperature is 25℃-200℃;

[0009] Optionally, during single-step magnetron sputtering, the argon:oxygen ratio in the sputtering deposition atmosphere is 20:1-200:1.

[0010] Optionally, during a single-step magnetron sputtering process, the target-substrate distance for sputtering deposition is 20mm-1000mm.

[0011] Optionally, the first cell includes a CIGS cell, an HJT cell, a Top-con cell, a Perc cell, or a GaAs cell; the second cell includes a formal single-cell perovskite solar cell, an inverted single-cell perovskite solar cell, or a tandem perovskite solar cell.

[0012] Optionally, the band gap width of the perovskite absorber layer of the second cell is 1.53 eV-1.78 eV.

[0013] Optionally, the transparent electrode includes a metal / oxide / metal sandwich electrode or a transparent conductive oxide electrode; the transparent electrode material includes ITO, IZO, AZO or AGO.

[0014] Optionally, the method for fabricating a tandem perovskite solar cell further includes the following steps: cleaning the first cell; forming a hole transport layer, and forming a hole transport layer of the second cell on the first cell; forming a perovskite absorber layer, and forming the perovskite absorber layer of the second cell on the surface of the hole transport layer of the second cell away from the first cell; forming an electron transport layer, and forming the electron transport layer of the second cell on the surface of the perovskite absorber layer of the second cell away from the first cell; and forming a transparent electrode on the surface of the electron transport layer of the second cell away from the first cell through a multi-step magnetron sputtering process.

[0015] Optionally, in the step of forming the hole transport layer, the hole transport layer of the second cell is formed by spin coating, vapor deposition, or coating; in the step of forming the perovskite transport layer, the perovskite absorber layer of the second cell is formed by spin coating, vapor deposition, or coating; in the step of forming the electron transport layer, the electron transport layer of the second cell is formed by spin coating, vapor deposition, or coating.

[0016] The beneficial effects of this invention are as follows:

[0017] The present invention provides a method for fabricating tandem perovskite solar cells, which forms the transparent electrode of the second cell stepwise through a multi-step magnetron sputtering process. The sputtering power of each magnetron sputtering step gradually increases, as does the deposition thickness of the transparent electrode material. This allows the first portion of the transparent electrode material to be deposited, due to its lower deposition power and slower formation, to minimize damage to the underlying layers, thus maintaining a complete morphology and reducing the risk of film damage. Furthermore, the slower formation due to the lower deposition power results in a denser, flatter, and more uniform film layer, leading to a decrease in overall resistivity and a reduction in the sheet resistance of the entire transparent electrode. This facilitates charge transport and improves the electrical performance of the solar cell. In addition, since the transparent electrode material typically contains metal oxides and inherently contains oxygen, a large number of oxygen anions are generated during the magnetron sputtering process. These oxygen anions, under the influence of an electric field, bombard the surface of the deposited transparent electrode film with a certain particle energy, causing structural defects in the crystal structure and crystalline state of the transparent electrode film. The higher the sputtering energy (i.e., the higher the power), the greater the energy of oxygen negative ions bombarding the film surface, thus increasing the probability of structural defects and the severity of crystal structure defects. The present invention, by initially using a lower sputtering power and gradually increasing it, significantly reduces the probability of some crystal structure defects forming in the transparent electrode, thereby lowering the resistivity of the film and ultimately reducing the overall sheet resistance of the transparent electrode, thus improving the electrical performance of the solar cell. Attached Figure Description

[0018] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is a schematic flowchart of a method for fabricating a tandem perovskite solar cell according to an embodiment of the present invention;

[0020] Figure 2 The above is a performance test diagram of the tandem perovskite solar cell prepared in Example 2 of the present invention;

[0021] Figure 3 The image shows the performance test results of the tandem perovskite solar cell prepared in Example 3 of this invention. Detailed Implementation

[0022] To address the challenge of balancing the production efficiency of transparent electrodes with the integrity of the functional layer film in the battery, this invention provides a method for fabricating a tandem perovskite solar cell, comprising the following steps: providing a first cell as a base cell; forming a second cell on the first cell; wherein the second cell is a perovskite solar cell, and includes a transparent electrode located away from the first cell; the transparent electrode is formed by depositing transparent electrode material stepwise through a multi-step magnetron sputtering process; in the multi-step magnetron sputtering process, the sputtering power of each magnetron sputtering step is gradually increased, and the deposition thickness of the transparent electrode material deposited in each magnetron sputtering step is gradually increased.

[0023] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0024] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0025] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can also refer to the internal connection of two components; and they can refer to a wireless connection or a wired connection. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0026] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0027] Example 1

[0028] refer to Figure 1 This embodiment provides a method for fabricating a tandem perovskite solar cell, including the following steps:

[0029] Provide the first battery as the base battery.

[0030] A second cell is formed on the first cell; wherein the second cell is a perovskite solar cell and includes a transparent electrode located away from the first cell.

[0031] The transparent electrode is formed by depositing transparent electrode material step by step through a multi-step magnetron sputtering process. In the multi-step magnetron sputtering process, the sputtering power of each magnetron sputtering process is gradually increased, and the deposition thickness of the transparent electrode material deposited in each magnetron sputtering step is gradually increased.

[0032] Furthermore, the multi-step magnetron sputtering process includes 2-10 magnetron sputtering steps; the total deposition thickness of the deposited transparent electrode material (i.e., the total thickness of the transparent electrode) is 80nm-500nm.

[0033] Specifically, in one embodiment, the multi-step magnetron sputtering step includes a 4-step magnetron sputtering process;

[0034] in,

[0035] The first step is a magnetron sputtering process with a sputtering power of 10W and a deposition thickness of 10nm.

[0036] The second step is magnetron sputtering, with a sputtering power of 50W and a deposition thickness of 30nm.

[0037] The third step is the magnetron sputtering process, with a sputtering power of 150W and a deposition thickness of 40nm.

[0038] The fourth step is the magnetron sputtering process, with a sputtering power of 300W and a deposition thickness of 100nm.

[0039] A transparent electrode is formed by distributing and depositing transparent electrode material through a four-step magnetron sputtering process. The sputtering power of each magnetron sputtering step is gradually increased, and the deposition thickness of the transparent electrode material in each magnetron sputtering step is gradually increased.

[0040] Furthermore, during the single-step magnetron sputtering process, the sputtering deposition pressure is 0.1 Pa to 0.5 Pa.

[0041] Furthermore, during the single-step magnetron sputtering process, the sputtering deposition temperature is 25℃-200℃;

[0042] Furthermore, during single-step magnetron sputtering, the argon:oxygen ratio in the sputtering deposition atmosphere is 20:1-200:1.

[0043] Furthermore, in the single-step magnetron sputtering process, the target-substrate distance for sputtering deposition is 20mm-1000mm.

[0044] Furthermore, the first cell includes a CIGS cell, an HJT cell, a Top-con cell, a PERC cell, or a GaAs cell; the second cell includes a standard single-junction perovskite solar cell, an inverted single-junction perovskite solar cell, or a tandem perovskite solar cell. Taking an HJT cell as the first cell and a pin-type perovskite solar cell as the second cell as an example, the tandem perovskite solar cell structure prepared in this embodiment includes, from bottom to top: a transparent electrode of the first cell, a P-type amorphous silicon layer, a nanocrystalline silicon layer, an intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a tunnel junction of the first cell, a hole transport layer of the second cell, a perovskite absorber layer of the second cell, an electron transport layer of the second cell, and a transparent electrode of the second cell. The material of the hole transport layer of the second cell includes NiO. x The materials for the electron transport layer of the second battery include PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]); TiO2, C60, and PCBM ((6,6)-phenyl-C61 butyrate methyl ester). The transparent electrode of the second battery includes a metal / oxide / metal sandwich electrode or a transparent conductive oxide electrode; the transparent electrode materials include ITO, IZO, AZO, or AGO.

[0045] It should be noted that when the transparent electrode of the second battery is a metal / oxide / metal sandwich electrode, the first metal film can be deposited on the electron transport layer first by means of evaporation, electroplating or other methods, and then a transparent conductive oxide electrode layer can be formed by stepwise magnetron sputtering, and then the second metal film on top can be formed.

[0046] Furthermore, the band gap of the perovskite absorber layer in the second battery is 1.53 eV-1.78 eV. The material of the perovskite absorber layer is ABX3 type wide bandgap perovskite semiconductor material. In the formula, A includes monovalent cations such as methylamine, ethylamine, propylamine, formamidinium, guanidine salts, aniline, benzylamine, or phenethylamine, and mixtures thereof; B includes divalent cations such as Pb, Sn, or Ge, and mixtures thereof; X includes monovalent anions such as Cl or Br, and mixtures thereof.

[0047] In addition, refer to Figure 1 The method for fabricating tandem perovskite solar cells also includes the following steps:

[0048] Clean the first battery.

[0049] The steps for forming the second battery include:

[0050] A hole transport layer is formed; a hole transport layer for the second cell is formed on top of the first cell. Specifically, the location of the hole transport layer varies depending on the first cell. For example, when the first cell is an HJT cell, the hole transport layer is formed on the surface of the tunnel junction structure of the HJT cell.

[0051] A perovskite absorber layer is formed; a perovskite absorber layer of the second cell is formed on the surface of the hole transport layer of the second cell away from the first cell.

[0052] An electron transport layer is formed; an electron transport layer of the second cell is formed on the surface of the perovskite absorber layer of the second cell away from the first cell.

[0053] The transparent electrode of the second battery is formed on the surface of the electron transport layer of the second battery away from the first battery through a multi-step magnetron sputtering process.

[0054] Specifically, in the step of forming the hole transport layer, a spin coating, vapor deposition, or coating method is used to form the hole transport layer of the second cell. In the step of forming the perovskite transport layer, a spin coating, vapor deposition, or coating method is used to form the perovskite absorber layer of the second cell. In the step of forming the electron transport layer, a spin coating, vapor deposition, or coating method is used to form the electron transport layer of the second cell.

[0055] The method for fabricating a tandem perovskite solar cell provided in this embodiment involves forming the transparent electrode of the second cell stepwise through a multi-step magnetron sputtering process. The sputtering power and deposition thickness of the transparent electrode material gradually increase in each magnetron sputtering step. This allows the first portion of the transparent electrode material to be deposited, due to its lower deposition power and slower formation, to minimize damage to the underlying layers, thus maintaining a complete morphology and reducing the risk of film damage. Furthermore, the slower formation due to the lower deposition power results in a denser, flatter, and more uniform film layer, leading to a decrease in overall resistivity and a reduction in the sheet resistance of the entire transparent electrode. This facilitates charge transport and improves the electrical performance of the solar cell. In addition, since the transparent electrode material typically contains metal oxides and inherently contains oxygen, a large number of oxygen anions are generated during the magnetron sputtering process. These oxygen anions, under the influence of an electric field, bombard the surface of the deposited transparent electrode film with a certain particle energy, causing structural defects in the crystalline structure and crystal state of the transparent electrode film. The higher the sputtering energy (i.e., the higher the power), the greater the energy of oxygen negative ions bombarding the film surface, thus increasing the probability of structural defects and the severity of crystal structure defects. The present invention, by initially using a lower sputtering power and gradually increasing it, significantly reduces the probability of some crystal structure defects forming in the transparent electrode, thereby lowering the resistivity of the film and ultimately reducing the overall sheet resistance of the transparent electrode, thus improving the electrical performance of the solar cell.

[0056] Example 2

[0057] Based on the above embodiment 1, this embodiment provides a method for preparing a tandem perovskite solar cell, wherein the first cell is an HJT cell and the second cell is a perovskite solar cell.

[0058] Includes the following steps:

[0059] After cleaning the bottom cell, NiO was prepared by magnetron sputtering. x Hole transport layer, 5nm-30nm;

[0060] PbX2 is deposited on the surface of the HJT sputtered hole transport layer by vapor deposition, with a thickness of 100nm-500nm; the preferred deposition rate is 0.1A / s-5A / s.

[0061] After removal, the film is placed in an alcoholic solution of CH3NH3Cl, CH3NH3Br or HC(=NH)NH2Cl, HC(=NH)NH2Br and reacted for 10 to 30 minutes. After the reaction is completed, the film is rinsed with alcohol solvents such as ethanol and isopropanol and annealed at 80℃ to 150℃ to obtain a perovskite film with a wavelength of 200nm to 800nm.

[0062] A C60 electron transport layer was deposited on the surface of the perovskite layer using a vapor deposition method, with a thickness of 5nm-40nm.

[0063] SnO2 was deposited using the ALD method to produce wide-bandgap semiconductor materials, ranging from 5nm to 30nm.

[0064] ITO transparent electrodes were sputtered using magnetron sputtering equipment. The process involved three steps: First, a sputtering process was performed with a sputtering power of 50 W, a pressure of 0.3 Pa, and an argon:oxy ratio of 100:4, depositing 10 nm-20 nm. Second, a sputtering process was performed with a sputtering power of 100 W, a pressure of 0.3 Pa, and an argon:oxy ratio of 100:4, depositing 20 nm-40 nm. Third, a sputtering process was performed with a sputtering power of 200 W, a pressure of 0.3 Pa, and an argon:oxy ratio of 100:4, depositing 40 nm-80 nm. This resulted in an ITO transparent electrode with a film thickness of 100 nm-200 nm.

[0065] Ag gates are deposited by evaporation on a mask to form Ag gate electrodes or Ag gate films, thereby improving the extraction and transport of charge carriers.

[0066] The performance comparison between the tandem perovskite solar cell prepared in this embodiment and the single-step magnetron sputtering solar cell is shown in the reference. Figure 2 A comparative study of single-step magnetron sputtering of transparent electrodes was conducted using a minimum adjustable power of 40W, with ITO film thicknesses ranging from 100nm to 200nm. It can be seen that, within most of the range, the multi-step magnetron sputtering method for forming the transparent electrode of the second cell exhibits superior performance in terms of open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and cell device efficiency (Eff).

[0067] Example 3

[0068] Based on the above embodiment 1, this embodiment provides a method for preparing a tandem perovskite solar cell, wherein the first cell is a CIGS cell and the second cell is a perovskite solar cell.

[0069] Includes the following steps:

[0070] After cleaning the first battery with anhydrous ethanol, NiO was prepared by magnetron sputtering. x Hole transport layer, 5nm-30nm;

[0071] PbI2 is deposited on the CIGS surface of the sputtered hole transport layer by vapor deposition, with a thickness of 100 nm to 500 nm; the preferred deposition rate is 0.1 A / s to 5 A / s.

[0072] After cooling, the film is placed in an alcoholic solution of CH3NH3Cl, CH3NH3Br, or HC(=NH)NH2Cl, HC(=NH)NH2Br and reacted for 10-30 minutes. After the reaction is completed, the film is rinsed with alcohol solvents such as ethanol and isopropanol and annealed at 80℃-150℃ to obtain a perovskite film with a wavelength of 200nm-800nm.

[0073] A C60 electron transport layer was deposited on the surface of the perovskite layer using a vapor deposition method, with a thickness of 5nm-40nm.

[0074] SnO2 was deposited using the ALD method to produce wide-bandgap semiconductor materials, ranging from 5nm to 30nm.

[0075] ITO transparent electrodes were sputtered using magnetron sputtering equipment. The process involved three steps: First, a sputtering process was performed with a sputtering power of 50 W, a pressure of 0.3 Pa, and an argon:oxy ratio of 100:4, depositing 10 nm-20 nm. Second, a sputtering process was performed with a sputtering power of 100 W, a pressure of 0.3 Pa, and an argon:oxy ratio of 100:4, depositing 20 nm-40 nm. Third, a sputtering process was performed with a sputtering power of 200 W, a pressure of 0.3 Pa, and an argon:oxy ratio of 100:4, depositing 40 nm-80 nm. This resulted in an ITO transparent electrode with a film thickness of 100 nm-200 nm.

[0076] Ag gates are deposited by evaporation on a mask to form Ag gate electrodes or Ag gate films, thereby improving the extraction and transport of charge carriers.

[0077] The performance comparison between the tandem perovskite solar cell prepared in this embodiment and the single-step magnetron sputtering solar cell is shown in the reference. Figure 3 The comparative example of single-step magnetron sputtering of transparent electrodes was performed using a minimum adjustable power of 40W, with an ITO film thickness of 100nm-200nm. It can be seen that, within most of the range, the multi-step magnetron sputtering method for forming the transparent electrode of the second cell is superior in terms of open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and Eff.

[0078] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A method for fabricating a tandem perovskite solar cell, characterized in that, Includes the following steps: Provide the first battery as the base battery; A second cell is formed on the first cell; wherein the second cell is a perovskite solar cell and includes a transparent electrode remote from the first cell; The transparent electrode of the second battery is formed by depositing transparent electrode material step by step through a multi-step magnetron sputtering process; in the multi-step magnetron sputtering process, the sputtering power of each magnetron sputtering process gradually increases, and the deposition thickness of the transparent electrode material deposited in each magnetron sputtering process gradually increases; in each magnetron sputtering process, the sputtering power of the later step is greater than that of the previous step, and the deposition thickness of the transparent electrode material deposited in the later step is greater than that of the previous step; In the first step, the magnetron sputtering process has a sputtering power of 10W and a deposition thickness of 10nm.

2. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, The multi-step magnetron sputtering process includes 2-10 magnetron sputtering steps; The total deposition thickness of the transparent electrode material in the multi-step magnetron sputtering process is 80nm-500nm.

3. The method for fabricating a tandem perovskite solar cell according to claim 2, characterized in that, The multi-step magnetron sputtering process includes four magnetron sputtering steps; wherein... The second step is magnetron sputtering, with a sputtering power of 50W and a deposition thickness of 30nm. The third step is the magnetron sputtering process, with a sputtering power of 150W and a deposition thickness of 40nm. The fourth step is the magnetron sputtering process, with a sputtering power of 300W and a deposition thickness of 100nm.

4. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, During the single-step magnetron sputtering process, the sputtering deposition pressure is 0.1 Pa to 0.5 Pa.

5. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, In the single-step magnetron sputtering process, the sputtering deposition temperature is 25℃-200℃.

6. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, In the single-step magnetron sputtering process, the argon:oxygen ratio in the sputtering deposition atmosphere is 20:1-200:

1.

7. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, In the single-step magnetron sputtering process, the target-substrate distance for sputtering deposition is 20mm-1000mm.

8. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, The first battery includes a CIGS battery, an HJT battery, a Top-con battery, a Perc battery, or a GaAs battery; The second cell includes a standard single-cell perovskite solar cell, an inverted single-cell perovskite solar cell, or a tandem perovskite solar cell.

9. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, The band gap width of the perovskite absorber layer in the second battery is 1.53 eV-1.78 eV.

10. The method for fabricating a tandem perovskite solar cell according to claim 1, characterized in that, The transparent electrode of the second battery includes a metal / oxide / metal sandwich electrode or a transparent conductive oxide electrode; The transparent electrode material includes ITO, IZO, AZO, or AGO.

11. The method for fabricating a tandem perovskite solar cell according to any one of claims 1-10, characterized in that, It also includes the following steps: Clean the first battery; The step of forming the second battery on the first battery includes: A hole transport layer is formed, and a hole transport layer of the second battery is formed on the first battery; A perovskite absorber layer is formed on the surface of the hole transport layer of the second cell away from the first cell. An electron transport layer is formed on the surface of the perovskite absorber layer of the second battery away from the first battery. The transparent electrode of the second battery is formed on the surface of the electron transport layer of the second battery away from the first battery through the multi-step magnetron sputtering process.

12. The method for fabricating a tandem perovskite solar cell according to claim 11, characterized in that, In the step of forming the hole transport layer, the hole transport layer of the second battery is formed by vapor deposition or coating. In the step of forming the perovskite transport layer, the perovskite absorber layer of the second battery is formed by vapor deposition or coating. In the step of forming the electron transport layer, the electron transport layer of the second battery is formed using a vapor deposition method or a coating method.

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